Vapor deposition equipment

Abstract

The invention relates to vapor deposition equipment, and relates to the technical field of semiconductor preparation, the vapor deposition equipment comprises a first gas inlet, a gas distribution structure, a gas inlet structural body and a bearing table, the gas distribution structure comprises a bottom wall and a side wall, a plurality of gas passing holes are formed in the bottom wall, and a first heating part surrounding the bottom wall is arranged in the side wall; the air inlet structural body is arranged in a space defined by the bottom wall and the side wall, an air channel communicating with the first air inlet and the air passing holes is arranged in the air inlet structural body, and a second heating part surrounding the air channel is arranged in the air inlet structural body. The first heating part is arranged in the side wall of the gas distribution structure, and the second heating part is arranged in the gas inlet structural body, so that the temperature distribution in the vapor deposition equipment can be controlled by utilizing the first heating part and the second heating part, and the free molecule collision frequency of reaction gas in different areas can be controlled by adjusting the temperature; and the uniformity of the thickness of the film layer is improved, subsequent processes are favorably executed, and the product yield is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor preparation technology, and in particular to a vapor deposition device. Background Art

[0002] As a key technology in the semiconductor manufacturing process, the vapor deposition process can use the reaction of gas on the wafer to generate a film layer with specific material and function to meet the performance requirements of semiconductor devices. The uniformity of film thickness is an important indicator to measure the quality of film growth, which has a significant impact on device performance, complex structure requirements and large-scale production. Summary of the invention

[0003] In order to overcome the problems existing in the related art, the present application provides a vapor deposition device.

[0004] According to some embodiments of the present application, a vapor deposition device is provided, the vapor deposition device comprising: First air inlet; A gas distribution structure, the gas distribution structure comprising a bottom wall and a side wall arranged around the bottom wall, the bottom wall is provided with a plurality of gas holes, and the side wall is provided with a first heating portion surrounding the bottom wall; an air intake structure, the air intake structure being arranged in a space enclosed by the bottom wall and the side wall, the air intake structure being provided with a gas passage connecting the first air intake port and each of the air holes, and the air intake structure being provided with a second heating portion surrounding the gas passage; The carrying platform is used for carrying the wafer, and each of the air holes faces the carrying platform.

[0005] In some embodiments of the present application, the first heating portion includes at least one first sub-heating portion embedded in the side wall, and each of the first sub-heating portions includes a first heating coil surrounding the bottom wall; or, each of the first sub-heating portions includes at least two groups of first heating units, and each group of the first heating units includes at least two first arc-shaped heating wires, and along the circumference of the gas distribution structure, the first arc-shaped heating wires of different groups of first heating units are arranged in an interlaced manner.

[0006] In some embodiments of the present application, a plurality of the first sub-heating parts are provided, and the plurality of the first sub-heating parts are arranged at intervals along the axial direction of the gas distribution structure.

[0007] In some embodiments of the present application, the second heating portion includes a plurality of second sub-heating portions embedded in the air intake structure, and the plurality of second sub-heating portions are arranged along the radial direction of the air intake structure.

[0008] In some embodiments of the present application, each of the second sub-heating parts includes at least one second heating coil surrounding the gas channel; or, each of the second sub-heating parts includes at least two groups of second heating units, each group of second heating units includes at least two second arc-shaped heating wires, and along the circumference of the air intake structure, the second arc-shaped heating wires of different groups of second heating units are arranged in an interlaced manner.

[0009] In some embodiments of the present application, at least one of the second sub-heating parts includes a plurality of the second heating coils, and the plurality of the second heating coils in the same second sub-heating part are arranged at intervals along the axial direction of the air intake structure.

[0010] In some embodiments of the present application, the gas channel includes a constant diameter section and a variable diameter section, one end of the constant diameter section is connected to the first air inlet, and the other end of the constant diameter section is connected to one end of the variable diameter section, the diameter of the variable diameter section gradually increases from the constant diameter section toward the bottom wall, and there is a preset spacing distance between the air intake structure and the bottom wall.

[0011] In some embodiments of the present application, the bottom wall includes a first distribution portion and a second distribution portion arranged in sequence from the center to the edge of the bottom wall, wherein in the direction from the center to the edge of the bottom wall, the length of the first distribution portion is less than the length of the second distribution portion, the lengths of the air holes in the first distribution portion are the same, and the lengths of the air holes in the second distribution portion gradually decrease; or, The bottom wall includes a first distribution portion, a second distribution portion and a third distribution portion which are arranged in sequence from the center to the edge of the bottom wall, wherein in the direction from the center to the edge of the bottom wall, the length of the first distribution portion is smaller than the length of the second distribution portion, the lengths of the air holes in the first distribution portion are all the same, the lengths of the air holes in the third distribution portion are all the same, the lengths of the air holes in the first distribution portion are larger than the lengths of the air holes in the third distribution portion, and the lengths of the air holes in the second distribution portion gradually decrease.

[0012] In some embodiments of the present application, the top surface of the first distribution portion is located between the top end and the bottom end of the diameter-changing section; or, The top surface of the first distribution portion and at least a portion of the top surface of the second distribution portion are located between the top end and the bottom end of the diameter-changing section.

[0013] In some embodiments of the present application, the first distributing portion is arranged opposite to the equal-diameter section, and the diameter of the first distributing portion is smaller than the diameter of the equal-diameter section; and / or, A surface of the second distribution portion close to the air intake structure and a surface of the air intake structure close to the gas distribution structure are parallel to each other.

[0014] In some embodiments of the present application, the bottom wall includes the first distribution portion, the second distribution portion and the third distribution portion, a first vertical distance is formed between the top surface of the first distribution portion and the bottom end of the constant diameter section, a second vertical distance is formed between the top surface of the second distribution portion and the hole wall of the variable diameter section, and a third vertical distance is formed between the top surface of the third distribution portion and the hole wall of the variable diameter section; The second vertical distance is greater than the first vertical distance, and the second vertical distance is greater than the third vertical distance.

[0015] The technical solution provided by the embodiments of the present application may include the following beneficial effects: by setting a first heating part in the side wall of the gas distribution structure and setting a second heating part in the air intake structure, the temperature of the reaction gas entering the gas channel is increased, and the temperature difference between the reaction gas entering the vapor deposition equipment and the gas reaction occurring is reduced, so that the reaction gas always maintains a high free molecule expansion frequency during the transportation process in the vapor deposition equipment, thereby improving the uniformity of the film thickness, and the first heating part and the second heating part can be used to control the temperature distribution in the vapor deposition equipment, thereby controlling the free molecule collision frequency of the reaction gas in different areas by adjusting the temperature, thereby improving the uniformity of the film thickness, which is beneficial to the execution of subsequent processes and improving product yield.

[0016] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0018] Figure 1 It is a schematic diagram of film thickness.

[0019] Figure 2 is a schematic diagram of a vapor deposition device according to an exemplary embodiment.

[0020] Figure 3 is a schematic diagram showing the thickness of a film layer according to an exemplary embodiment.

[0021] Figure 4 is a schematic diagram of a first sub-heating unit according to an exemplary embodiment.

[0022] Figure 5 is a schematic diagram of a second heating unit according to an exemplary embodiment.

[0023] Figure 6is a schematic diagram of a second sub-heating unit according to an exemplary embodiment.

[0024] Figure 7 is a schematic diagram of a gas channel and a bottom wall according to an exemplary embodiment.

[0025] Figure 8 is a schematic diagram of a gas channel and a bottom wall according to another exemplary embodiment.

[0026] Fig. 9 It is a schematic diagram of a gas channel.

[0027] Fig.10 is a schematic diagram of a gas channel and a bottom wall according to another exemplary embodiment.

[0028] Fig.11 is a schematic diagram of a bottom wall according to an exemplary embodiment.

[0029] Fig.12 is a schematic diagram of a gas channel and a bottom wall according to another exemplary embodiment.

[0030] Fig.13 is a schematic diagram of a bottom wall according to another exemplary embodiment.

[0031] Fig.14 is a schematic diagram of a third heating unit according to an exemplary embodiment.

[0032] In the figure: 10-first air inlet; 20-gas distribution structure; 21-bottom wall; 22-side wall; 23-air hole; 24-first distribution part; 25-second distribution part; 26-third distribution part; 30-first heating part; 31-first sub-heating part; 32-first heating unit; 33-first arc heating wire; 40-air inlet structure; 41-gas channel; 42-equal diameter section; 43-variable diameter section; 50-second heating part; 51-second sub-heating part; 52-second heating unit; 53-second arc heating wire; 60-supporting platform; 70-third heating part; 71-third sub-heating part: 80-second air inlet; 81-conical speed regulation structure; 90-air outlet; 100-housing. DETAILED DESCRIPTION

[0033] Here, exemplary embodiments are described in detail, and examples thereof are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application.

[0034] Among the related technologies, vapor deposition processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD) are key technologies in the semiconductor preparation process. They can use the reaction of gas on the wafer to generate film layers with specific materials and functions such as oxide films to meet the structural and performance requirements of semiconductor devices.

[0035] For semiconductor structures, the uniformity of film thickness formed by vapor deposition is an important indicator for measuring the quality of film growth. It determines the accuracy of processes such as double patterning and pitch doubling that achieve size miniaturization of dynamic random access memory (DRAM), and has a significant impact on device performance, complex structure requirements and large-scale production.

[0036] During vapor deposition, the free molecular collision frequency of the reaction gases, such as precursors and reactants, determines the adsorption of the reaction gases on the wafer, thereby determining the growth rate of the film layer, making it the main factor affecting the uniformity of the film thickness. However, when using the vapor deposition equipment of the related technology for vapor deposition, due to the limitations of the structure of the vapor deposition equipment, the reaction gases in different areas between the air inlet and the wafer have different temperatures, transmission paths and concentrations, resulting in different free molecular collision frequencies of the reaction gases in different areas. Figure 1 As shown, when the free molecule collision frequency of the reaction gas in the center area of ​​the wafer is lower than the free molecule collision frequency of the reaction gas in the edge area, the probability and rate of the gas molecules above the center area of ​​the wafer being able to move freely are low, making it easy for the reaction gas in the center area of ​​the wafer to react with the wafer and adsorb on the wafer, and the probability and rate of the gas molecules above the edge area of ​​the wafer being able to move freely are high, making it difficult for the reaction gas in the edge area of ​​the wafer to react with the wafer and adsorb on the wafer, resulting in a thicker film layer thickness in the center area of ​​the wafer and a thinner film layer thickness in the edge area, and the difference between the two can reach 0.5nm, resulting in poor uniformity of the thickness of the manufactured film layer, which seriously affects the accuracy of subsequent processes and product yield.

[0037] Based on this, an exemplary embodiment of the present application provides a vapor deposition device. By setting a first heating part in the side wall of the gas distribution structure and a second heating part in the air intake structure, the temperature of the reaction gas entering the gas channel is increased, and the temperature difference between the reaction gas entering the vapor deposition device and the gas reaction is reduced, so that the reaction gas always maintains a high free molecular expansion frequency during the transportation process in the vapor deposition device, thereby improving the uniformity of the film thickness, and the first heating part and the second heating part can be used to control the temperature distribution in the vapor deposition device, so that the free molecular collision frequency of the reaction gas in different areas can be controlled by adjusting the temperature, thereby improving the uniformity of the film thickness, which is beneficial to the execution of subsequent processes and improving product yield.

[0038] In one exemplary embodiment, a vapor deposition apparatus is provided for forming a film layer on a wafer by a vapor deposition process. Figure 2 As shown, the vapor deposition apparatus includes a first gas inlet 10, a gas distribution structure 20, a gas inlet structure 40 and a carrier 60. The first gas inlet 10 is used to introduce reaction gas. For example, the vapor deposition apparatus includes a housing 100, the gas distribution structure 20, the gas inlet structure 40 and the carrier 60 are arranged in the housing 100, and the first gas inlet 10 is arranged on the housing 100. The first gas inlet 10 is used to introduce matching reaction gas for the vapor deposition process. For the atomic layer deposition process, the reaction gas includes a precursor and a reactant. The precursor used in the atomic layer deposition process may include, for example, bis(diethylamino)silane, namely SAM-24.

[0039] The gas distribution structure 20 includes a bottom wall 21 and a side wall 22 arranged around the bottom wall 21. The bottom wall 21 of the gas distribution structure 20 is provided with a plurality of gas holes 23 for uniformly distributing the reaction gas to the surface of the wafer. The side wall 22 of the gas distribution structure 20 is fixedly connected to the housing 100 of the vapor deposition device to fix and support the bottom wall 21. In order to match the shape of the wafer, the outer edge of the bottom wall 21 projected on the horizontal plane, i.e., the XOZ plane, and the inner edge and outer edge of the side wall 22 projected on the horizontal plane can be circular, for example.

[0040] A first heating part 30 surrounding the bottom wall 21 is provided in the side wall 22 of the gas distribution structure 20. The first heating part 30 is used to heat the reaction gas, thereby providing a suitable reaction temperature for the reaction gas. Exemplarily, the first heating part 30 may be a heating coil or a heating wire embedded in the side wall 22. The first heating part 30 is connected to a controller of the vapor deposition device, and the controller can adjust the heating temperature of the first heating part 30 by automatic control or manual control by the user.

[0041] The gas inlet structure 40 is disposed in the space enclosed by the bottom wall 21 and the side wall 22, and is located between the first gas inlet port 10 and the gas distribution structure 20. The gas inlet structure 40 can be fixedly connected to the housing 100 of the vapor deposition device or the side wall 22 of the gas distribution structure 20. The gas inlet structure 40 is provided with a gas channel 41 that penetrates the gas inlet structure 40 and connects the first gas inlet port 10 and each gas hole 23, so that the reaction gas can be transported from the first gas inlet port 10 to each gas hole 23 through the gas channel 41.

[0042] The gas inlet structure 40 is provided with a second heating part 50 surrounding the gas channel 41. The second heating part 50 is used to heat the reaction gas, thereby providing a suitable reaction temperature for the reaction gas. For example, the second heating part 50 can be a heating coil or a heating wire embedded in the gas inlet structure 40. The second heating part 50 is connected to the controller of the vapor deposition device, and the controller can adjust the heating temperature of the second heating part 50 by automatic control or manual control by the user.

[0043] The carrier 60 is disposed on a side of the gas distribution structure 20 away from the gas inlet structure 40. The carrier 60 is used to carry the wafer. Each of the gas holes 23 on the gas distribution structure 20 faces the carrier 60, so that the reaction gas can be evenly distributed to the surface of the wafer after passing through the gas distribution structure 20. The carrier 60 can move in the height direction, i.e., the Y direction, so that it can receive the wafer transported from the outside at a lower receiving position, and move to a higher reaction position to keep the distance between the wafer and the gas hole 23 within a suitable range.

[0044] It can be understood that, since the first heating unit 30 and the second heating unit 50 are respectively provided in the side wall 22 and the air intake structure 40, the temperature of the reaction gas can be controlled by controlling the heating temperature of the first heating unit 30 and the second heating unit 50, and since the first heating unit 30 and the second heating unit 50 correspond to different positions in the horizontal direction, i.e., the X direction, a good temperature control effect can be achieved on the reaction gas in each area in the horizontal direction, so that the temperature distribution in the vapor deposition equipment is targeted. The free molecule collision frequency of the reaction gas is positively correlated with the temperature of the reaction gas. By controlling the temperature distribution in the vapor deposition equipment, the free molecule collision frequency of the reaction gas in different areas can be adjusted from the dimension of temperature. Figure 3 Schematic diagram of the thickness of the film layer produced by the vapor deposition equipment provided in this embodiment. Figure 3 As shown, by using the vapor deposition equipment provided by this embodiment, by heating the reaction gas and controlling the temperature distribution to adjust the free molecule collision frequency of the reaction gas in different regions, the thickness difference between the film layer thickness in the center region of the wafer and the film layer thickness in the edge region of the wafer can be greatly reduced, see Figure 3, the thickness at each position from the central region to the edge region of the wafer is substantially the same, there is no obvious thickness difference region, and the maximum thickness difference can be reduced to only 40% of the related technology, effectively improving the uniformity of the film layer thickness.

[0045] Exemplarily, if the film layer has a larger thickness in the central region of the wafer and a smaller thickness in the edge region, the first heating part 30 and the second heating part 50 can be used to increase the free molecular collision frequency of the reaction gas in the central region of the wafer by temperature control to reduce the adsorption of the reaction gas in the central region, that is, reduce the deposition rate of the reaction gas on the central region of the wafer, thereby reducing the thickness difference between the central region and the edge region of the film layer. If the film layer has a smaller thickness in the central region of the wafer and a larger thickness in the edge region, the first heating part 30 and the second heating part 50 can be used to reduce the free molecular collision frequency of the reaction gas in the central region of the wafer by temperature control to increase the adsorption of the reaction gas in the central region, thereby reducing the thickness difference between the central region and the edge region of the film layer.

[0046] In this embodiment, by providing the first air inlet 10, the gas distribution structure 20 and the air inlet structure 40, the reaction gas can be distributed to the wafer on the carrier 60 through the gas passage 41 provided in the first air inlet 10 and the air inlet structure 40 and the through holes 23 in the gas distribution structure 20, so that the vapor deposition device can realize the growth of the film layer. By providing the first heating part 30 in the side wall 22 of the gas distribution structure 20 and the second heating part 50 in the air inlet structure 40, the temperature distribution in the vapor deposition device can be controlled by using the first heating part 30 and the second heating part 50, thereby controlling the free molecular collision frequency of the reaction gas in different regions by adjusting the temperature, and further promoting the deposition rate of the reaction gas to be uniform over the entire region of the wafer, improving the uniformity of the film layer thickness, which is beneficial to performing subsequent processes and improving the product yield.

[0047] In some embodiments, referring to Figure 2 and Figure 4 shown, the first heating part 30 includes at least one first sub-heating part 31 embedded in the side wall 22, each first sub-heating part 31 includes a first heating coil surrounding the bottom wall 21, or each first sub-heating part 31 includes at least two groups of first heating units 32, and each group of first heating units 32 includes at least two first arc heating wires 33. Along the circumferential direction of the gas distribution structure 20, the first arc heating wires 33 of different groups of first heating units 32 are arranged at intervals and crosswise.

[0048] In some embodiments, the first heating unit 30 includes one or more first sub-heating units 31 embedded in the side wall 22, and each first sub-heating unit 31 may include a first heating coil surrounding the bottom wall 21, so as to achieve the heating effect of the first sub-heating unit 31 by means of the heating coil, and ensure the heating uniformity of each first sub-heating unit 31 in the circumferential direction of the side wall 22 through the central symmetrical structure of the heating coil.

[0049] In other embodiments, each first sub-heating portion 31 includes at least two groups of first heating units 32, each group of first heating units 32 includes at least two first arc-shaped heating wires 33, and the first arc-shaped heating wires 33 of different groups of first heating units 32 are cross-arranged at circumferential intervals along the gas distribution structure 20. When the first sub-heating portion 31 is working, any one or more first heating units 32 can be selected to be turned on to achieve the heating effect of the first sub-heating portion 31 by means of arc-shaped heating wires, and the circumferential heating uniformity of each first sub-heating portion 31 on the side wall 22 is ensured by the arrangement of the arc-shaped heating wires.

[0050] For example, Figure 4 As shown, the first sub-heating unit 31 includes three groups of first heating units 32, namely, a first heating unit 32-A, a first heating unit 32-B and a first heating unit 32-C. The first heating unit 32-A, the first heating unit 32-B and the first heating unit 32-C respectively include two oppositely arranged first arc heating wires 33, namely, a first arc heating wire 33-D and a first arc heating wire 33-E. When the first sub-heating unit 31 is working, any one of the three first heating units 32, a combination of any two, or all three can be turned on at the same time.

[0051] In the present embodiment, at least one first sub-heating portion 31 embedded in the side wall 22 is used as the first heating portion 30, and the first sub-heating portion 31 is configured as a first heating coil or at least two groups of first heating units 32 surrounding the bottom wall 21. The heating effect of the first sub-heating portion 31 can be achieved by means of a heating coil or an arc heating wire, and the heating uniformity of each first sub-heating portion 31 in the circumferential direction of the side wall 22 is ensured by the structure of the first heating coil or the arrangement of the first arc heating wire 33, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, facilitating the control of the free molecule collision frequency of the reaction gas in different regions, and beneficial to improving the uniformity of the film thickness.

[0052] In some embodiments, a plurality of first sub-heating portions 31 are provided, and the plurality of first sub-heating portions 31 are arranged at intervals along the axial direction of the gas distribution structure 20 .

[0053] As mentioned above, the first heating unit 30 includes at least one first sub-heating unit 31. Figure 2As shown, in the case where there are multiple first sub-heating units 31, the multiple first sub-heating units 31 are arranged at intervals along the axial direction of the gas distribution structure 20, that is, the Y direction, so that different first sub-heating units 31 correspond to different positions in the axial direction of the gas distribution structure 20, which can have a good temperature control effect on the reaction gas in each area in the axial direction, so that the temperature distribution of the vapor deposition equipment in the axial direction of the gas distribution structure 20 is uniform. Exemplarily, three first sub-heating units 31 are provided, each of which is a first heating coil, and the spacing distances between adjacent first sub-heating units 31 are the same.

[0054] In the present embodiment, when a plurality of first sub-heating sections 31 are provided, the plurality of first sub-heating sections 31 are arranged at intervals along the axial direction of the gas distribution structure 20, which can ensure the heating uniformity of the first heating section 30 in the axial direction of the gas distribution structure 20, further improve the control accuracy of the temperature distribution in the vapor deposition equipment, facilitate the control of the free molecule collision frequency of the reaction gas in different regions, and is beneficial to improving the uniformity of the film thickness.

[0055] In some embodiments, reference Figure 2 and Figure 5 As shown, the second heating portion 50 includes a plurality of second sub-heating portions 51 embedded in the air intake structure 40 , and the plurality of second sub-heating portions 51 are arranged along the radial direction of the air intake structure 40 .

[0056] The second heating unit 50 includes a plurality of second sub-heating units 51 embedded in the air intake structure 40. The plurality of second sub-heating units 51 are arranged along the radial direction of the air intake structure 40, i.e., the X direction and the Z direction, so that different second sub-heating units 51 correspond to different positions in the radial direction of the air intake structure 40, which can achieve good temperature control effect on the reaction gas in each radial region, and facilitate the control of the temperature distribution of the vapor deposition equipment in the radial direction of the air intake structure 40 to match the film thickness control requirements.

[0057] For example, Figure 5As shown, the second heating part 50 includes three second sub-heating parts 51, namely, a second sub-heating part 51-A, a second sub-heating part 51-B and a second sub-heating part 51-C. The second sub-heating part 51-A, the second sub-heating part 51-B and the second sub-heating part 51-C are arranged in sequence from the center to the edge in the radial direction of the air intake structure 40, and the heating areas corresponding to the second sub-heating part 51-A, the second sub-heating part 51-B and the second sub-heating part 51-C have the same width in the radial direction of the air intake structure 40. When the thickness of the film layer in the center area of ​​the wafer is greater than the thickness of the film layer in the edge area of ​​the wafer, and the second heating unit 50 is needed to reduce the thickness difference between the film layer in the center area and the edge area of ​​the wafer, the heating temperatures of the second sub-heating unit 51-A, the second sub-heating unit 51-B and the second sub-heating unit 51-C can be set to 305°C, 303°C and 300°C, respectively, so as to increase the frequency of free molecule collisions of the reaction gas in the center area of ​​the wafer by increasing the temperature, thereby reducing the adsorption of the reaction gas on the center area of ​​the wafer, that is, reducing the deposition rate of the reaction gas on the center area of ​​the wafer.

[0058] In the present embodiment, a plurality of second sub-heating sections 51 embedded in the air intake structure 40 are used as the second heating sections 50, and the plurality of second sub-heating sections 51 are arranged along the radial direction of the air intake structure 40, so as to facilitate the control of the temperature distribution of the vapor deposition equipment in the radial direction of the air intake structure 40 to match the film thickness control requirements, thereby further improving the control accuracy of the temperature distribution in the vapor deposition equipment, thereby controlling the free molecule collision frequency of the reaction gas in different regions, which is beneficial to improving the uniformity of the film thickness.

[0059] In some embodiments, reference Figure 2 and Figure 6 As shown, each second sub-heating portion 51 includes at least one second heating coil surrounding the gas channel 41, or each second sub-heating portion 51 includes at least two groups of second heating units 52, each group of second heating units 52 includes at least two second arc-shaped heating wires 53, and along the circumference of the air intake structure 40, the second arc-shaped heating wires 53 of different groups of second heating units 52 are arranged in an alternate and cross-arranged manner.

[0060] Each second sub-heating unit 51 may include one or more second heating coils surrounding the gas channel 41, so as to achieve the heating effect of the second sub-heating unit 51 by means of the heating coil, and ensure the heating uniformity of each second sub-heating unit 51 in the circumferential direction of the air intake structure 40 through the central symmetrical structure of the heating coil.

[0061] Alternatively, each second sub-heating portion 51 includes at least two groups of second heating units 52, each group of second heating units 52 includes at least two second arc-shaped heating wires 53, and the second arc-shaped heating wires 53 of different groups of second heating units 52 are cross-arranged at circumferential intervals along the air intake structure 40. When the second sub-heating portion 51 is working, any one or more second heating units 52 can be selected to be turned on to achieve the heating effect of the second sub-heating portion 51 by means of the arc-shaped heating wires, and the heating uniformity of each second sub-heating portion 51 in the circumferential direction of the air intake structure 40 is ensured by the arrangement of the arc-shaped heating wires.

[0062] For example, Figure 6 As shown, the second sub-heating unit 51 includes three groups of second heating units 52, namely, a second heating unit 52-A, a second heating unit 52-B and a second heating unit 52-C. The second heating unit 52-A, the second heating unit 52-B and the second heating unit 52-C respectively include two oppositely arranged second arc heating wires 53, namely, a second arc heating wire 53-D and a second arc heating wire 53-E. When the second sub-heating unit 51 is working, any one of the three second heating units 52, a combination of any two, or all three can be turned on at the same time.

[0063] In this embodiment, the second sub-heating part 51 is configured as a second heating coil or at least two groups of second heating units 52 surrounding the gas channel 41. The heating effect of the second sub-heating part 51 can be achieved by means of a heating coil or an arc heating wire, and the heating uniformity of each second sub-heating part 51 in the circumferential direction of the air intake structure 40 is ensured by the structure of the second heating coil or the arrangement of the second arc heating wire 53, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, facilitating the control of the free molecule collision frequency of the reaction gas in different regions, and beneficial to improving the uniformity of the film thickness.

[0064] In some embodiments, at least one second sub-heating portion 51 includes a plurality of second heating coils, and the plurality of second heating coils in the same second sub-heating portion 51 are arranged at intervals along the axial direction of the air intake structure 40 .

[0065] As mentioned above, the second heating unit 50 includes at least one second sub-heating unit 51. Figure 2As shown, when each second sub-heating part 51 includes a plurality of second heating coils, the plurality of second heating coils in the same second sub-heating part 51 are arranged at intervals along the axial direction of the intake structure 40, i.e., the Y direction, such that different second heating coils in the same second sub-heating part 51 correspond to different positions in the axial direction of the intake structure 40, which can achieve a good temperature control effect on the reaction gas in each region in this axial direction, and make the temperature distribution of the vapor deposition equipment in the axial direction of the intake structure 40 uniform. Exemplarily, the second heating part 50 includes three second sub-heating parts 51 arranged radially along the intake structure 40, and each second sub-heating part 51 includes two second heating coils arranged at intervals along the axial direction of the intake structure 40.

[0066] In this embodiment, when at least one second sub-heating part 51 includes a plurality of second heating coils, arranging the plurality of second heating coils in the same second sub-heating part 51 at intervals along the axial direction of the intake structure 40 can ensure the heating uniformity of the second heating part 50 in the axial direction of the intake structure 40, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, facilitating the control of the free molecular collision frequency of the reaction gas in different regions, and being beneficial to improving the uniformity of the film layer thickness.

[0067] In some embodiments, referring to Figure 7 or Figure 8 As shown, the gas passage 41 includes an equal-diameter section 42 and a variable-diameter section 43. One end of the equal-diameter section 42 is connected to the first air inlet 10, and the other end of the equal-diameter section 42 is connected to one end of the variable-diameter section 43. The diameter of the variable-diameter section 43 gradually increases from the equal-diameter section 42 towards the bottom wall 21, and there is a preset interval distance between the intake structure 40 and the bottom wall 21.

[0068] In one embodiment, as Fig. 9 shown, the gas passage 41 has an equal-diameter structure, and the length of the transmission path of the reaction gas in the central region from the first air inlet 10 to the bottom wall 21, i.e., the Fig. 9 A region shown, is much smaller than the length of the transmission path of the reaction gas in the edge region from the first air inlet 10 to the bottom wall 21, i.e., the Fig. 9 B region shown, resulting in a lower concentration of the reaction gas at the edge region in the radial direction of the bottom wall 21. Furthermore, the difference in the free molecular collision frequency of the reaction gas at the edge region of the bottom wall 21 and the free molecular collision frequency of the reaction gas at the central region of the bottom wall 21 is relatively large. Since the central region and the edge region of the bottom wall 21 correspond to the central region and the edge region of the wafer respectively, the difference in the film layer thickness between the central region of the wafer and the edge region of the wafer is relatively large.

[0069] In another embodiment, as Figure 7 and Figure 8As shown, the gas channel 41 provided in the air intake structure 40 can be divided into a constant diameter section 42 and a variable diameter section 43, and the two ends of the constant diameter section 42 are respectively connected to the first air intake port 10 and one end of the variable diameter section 43, and the reaction gas can be transported from the first air intake port 10 to the variable diameter section 43 through the constant diameter section 42. The diameter D1 of the constant diameter section 42 is always the same, and the diameter D2 of the variable diameter section 43 gradually increases from the constant diameter section 42 toward the bottom wall 21 of the gas distribution structure 20, so that the cross-sectional area of ​​the constant diameter section 42 of the gas channel 41 on the cross section parallel to the XOZ plane remains unchanged, and the cross-sectional area of ​​the variable diameter section 43 of the gas channel 41 on the cross section parallel to the XOZ plane gradually increases from the constant diameter section 42 toward the bottom wall 21 of the gas distribution structure 20.

[0070] For example, Figure 7 As shown, the diameter D2 of the end of the variable diameter section 43 connected to the equal diameter section 42 is the same as the diameter D1 of the equal diameter section 42, and the diameter D2 of the end of the variable diameter section 43 away from the equal diameter section 42 is the same as the diameter D3 of the air intake structure 40. Figure 8 As shown, the diameter D2 of one end of the variable diameter section 43 connected to the equal diameter section 42 is the same as the diameter D1 of the equal diameter section 42 , and the diameter D2 of the end of the variable diameter section 43 away from the equal diameter section 42 is smaller than the diameter D3 of the air intake structure 40 .

[0071] There is a preset spacing distance between the air intake structure 40 and the bottom wall 21, so that there is a spacing space between the gas channel 41 and the bottom wall 21, preventing the reaction gas from forming a "dead corner" at the outermost edge of the bottom wall 21, while also increasing the flow space of the reaction gas. After passing through the gas channel 41, the reaction gas can move evenly to the entire spacing space, thereby evenly distributing the reaction gas to the surface of the wafer through the gas distribution structure 20.

[0072] By arranging a constant diameter section 42 and a variable diameter section 43 in the gas channel 41, the variable diameter section 43 with a gradually increasing diameter can be used to shorten the transmission path of the reaction gas between the first gas inlet 10 and the edge area of ​​the bottom wall 21, so as to increase the concentration of the reaction gas at the edge area of ​​the bottom wall 21. The free molecular collision frequency of the reaction gas can be controlled from the dimensions of the transmission path and the gas concentration, thereby further improving the uniformity of the film thickness.

[0073] In this embodiment, the gas channel 41 is set to a constant diameter section 42 and a variable diameter section 43, and a preset spacing distance is set between the gas channel 41 and the bottom wall 21, thereby changing the gas transmission path of the reaction gas between the first gas inlet 10 and different radial regions of the bottom wall 21, reducing the concentration difference of the reaction gas between different radial regions of the bottom wall 21, and being able to control the free molecule collision frequency of the reaction gas in different regions from the dimensions of the transmission path and gas concentration, further improving the uniformity of the film thickness, and facilitating the execution of subsequent processes and improving product yield.

[0074] In some embodiments, reference Fig.10 and Fig.11 As shown, the bottom wall 21 includes a first distribution portion 24 and a second distribution portion 25 which are arranged in sequence from the center to the edge of the bottom wall, that is, in the X direction, the second distribution portion 25 is located outside the first distribution portion 24, and the second distribution portion 25 is arranged around the first distribution portion 24. In the direction from the center to the edge of the bottom wall 21 (X direction), the length of the first distribution portion 24 is less than the length of the second distribution portion 25, referring to Fig.10 , the center of the bottom wall is F, and along the direction from the center F of the bottom wall 21 to the edge, the length of the first distribution portion 24 is L1, and the length of the second distribution portion 25 is L2, and L2 is greater than L1. In the first distribution portion 24, the lengths of the air holes 23 are the same, and in the second distribution portion 25, the lengths of the air holes 23 gradually decrease along the direction from the center of the bottom wall 21 to the edge, that is, in the second distribution portion 25, the closer the air holes 23 are to the edge of the bottom wall 21, the smaller the lengths.

[0075] By setting the bottom wall 21 as the first distribution part 24 and the second distribution part 25, each through hole 23 has a length that matches its position on the bottom wall 21. The transmission path of the reaction gas in the through hole 23 first remains unchanged from the center to the edge of the bottom wall 21, and then gradually decreases. The length of the through hole 23 in the central area of ​​the bottom wall 21 is relatively large, and the length of the through hole 23 in the edge area of ​​the bottom wall 21 is relatively small. By increasing the transmission path of the reaction gas in the through hole 23 in the central area, the reaction gas in different areas can flow to the surface of the wafer at basically the same time, and the free molecule collision frequency of the reaction gas in different areas can be controlled from the dimension of the transmission path, thereby further improving the uniformity of the film thickness.

[0076] When the gas channel 41 is set as a constant diameter section 42 and a variable diameter section 43, the surface of the second distribution portion 25 close to the air intake structure 40 can also cooperate with the surface of the variable diameter section 43 close to the bottom wall 21 to form a uniform spacing space between the air intake structure 40 and the bottom wall 21, so that the concentration of the reaction gas in different areas of the spacing space is roughly the same, and the free molecular collision frequency of the reaction gas can be controlled from the dimension of gas concentration, thereby further improving the uniformity of the film thickness.

[0077] In the present embodiment, the bottom wall 21 is set as a first distribution part 24 and a second distribution part 25, and the lengths of the air holes 23 in the first distribution part 24 are all the same, and the lengths of the air holes 23 in the second distribution part 25 gradually decrease from the center to the edge of the bottom wall 21, so that each air hole 23 has a length that matches its position on the bottom wall 21, and the reaction gases in different areas can flow to the surface of the wafer at basically the same time, and the free molecular collision frequency of the reaction gas is controlled from the dimensions of the transmission path of the reaction gas and the gas concentration, thereby further improving the uniformity of the film thickness.

[0078] In other embodiments, reference Fig.12 and Fig.13 As shown, the bottom wall 21 includes a first distribution portion 24, a second distribution portion 25 and a third distribution portion 26 arranged in sequence from the center to the edge of the bottom wall 21. In the direction from the center to the edge of the bottom wall 21, the length of the first distribution portion 24 is less than the length of the second distribution portion 25. For the description of the length of the first distribution portion 24 and the length of the second distribution portion 25, please refer to Fig.10 The lengths of the air holes 23 in the first distribution part 24 are the same, the lengths of the air holes 23 in the third distribution part 26 are the same, the lengths of the air holes 23 in the first distribution part 24 are greater than the lengths of the air holes 23 in the third distribution part 26, and the lengths of the air holes 23 in the second distribution part 25 gradually decrease in the direction from the center to the edge of the bottom wall 21.

[0079] like Fig.12 and Fig.13 As shown in the figure, the first distribution part 24, the second distribution part 25 and the third distribution part 26 are arranged in sequence along the direction from the center to the edge of the bottom wall 21, that is, the third distribution part 26 is located outside the first distribution part 24 in the X direction, and the second distribution part 25 is located between the first distribution part 24 and the third distribution part 26. The second distribution part 25 is arranged around the first distribution part 24, and the third distribution part 26 is arranged around the second distribution part 25. In the first distribution part 24, the lengths of the air holes 23 are the same, and in the third distribution part 26, the lengths of the air holes 23 in the first distribution part 24 are greater than the lengths of the air holes 23 in the third distribution part 26. In the second distribution part 25, in the direction from the center to the edge of the bottom wall 21, the lengths of the air holes 23 gradually decrease, that is, in the second distribution part 25, the air holes 23 closer to the third distribution part 26 have smaller lengths.

[0080] By setting the bottom wall 21 as the first distribution part 24, the second distribution part 25 and the third distribution part 26, each through hole 23 has a length that matches its position on the bottom wall 21. The transmission path of the reaction gas in the through hole 23 first remains unchanged along the center to the edge of the bottom wall 21, then gradually decreases, and finally remains unchanged. The length of the through hole 23 in the central area of ​​the bottom wall 21 is relatively large, and the length of the through hole 23 in the edge area of ​​the bottom wall 21 is relatively small, which increases the transmission path of the reaction gas in the through hole 23 in the central area, so that the reaction gas in different areas can flow to the surface of the wafer at basically the same time, and the free molecule collision frequency of the reaction gas in different areas can be controlled from the dimension of the transmission path, thereby further improving the uniformity of the film thickness.

[0081] When the gas channel 41 is set as a constant diameter section 42 and a variable diameter section 43, the surface of the second distribution portion 25 close to the air intake structure 40 can also cooperate with the surface of the variable diameter section 43 close to the bottom wall 21 to form a uniform spacing space between the air intake structure 40 and the bottom wall 21, so that the concentration of the reaction gas in different areas of the spacing space is roughly the same, and the free molecular collision frequency of the reaction gas can be controlled from the dimension of gas concentration, thereby further improving the uniformity of the film thickness.

[0082] In this embodiment, the bottom wall 21 is set as a first distribution part 24, a second distribution part 25 and a third distribution part 26, and the lengths of the through holes 23 in the first distribution part 24, the second distribution part 25 and the third distribution part 26 are respectively configured so that each through hole 23 has a length that matches its position on the bottom wall 21, and the reaction gases in different areas can flow to the surface of the wafer at basically the same time, thereby controlling the free molecular collision frequency of the reaction gas from the dimensions of the transmission path of the reaction gas and the gas concentration, thereby further improving the uniformity of the film thickness.

[0083] In some embodiments, the top surface of the first distribution portion 24 is located between the top and bottom ends of the diameter-reducing section 43 , or the top surface of the first distribution portion 24 and at least part of the top surface of the second distribution portion 25 are located between the top and bottom ends of the diameter-reducing section 43 .

[0084] like Fig.10 and Fig.12As shown, in the case where the gas distribution structure 20 includes at least a first distribution portion 24 and a second distribution portion 25, at least a portion of the first distribution portion 24 of the bottom wall 21 can be extended into the variable diameter section 43 of the air intake structure 40, so that the top surface of the first distribution portion 24 is located between the top and bottom ends of the variable diameter section 43. At least a portion of the first distribution portion 24 and at least a portion of the second distribution portion 25 of the bottom wall 21 can also be extended into the variable diameter section 43 of the air intake structure 40 together, so that the top surface of the first distribution portion 24 and at least a portion of the top surface of the second distribution portion 25 are located between the top and bottom ends of the variable diameter section 43, so that the air intake structure 40 and the bottom wall 21 have overlapping portions in their axial direction, i.e., in the Y direction. When at least part of the first distribution portion 24 or at least part of the first distribution portion 24 and at least part of the second distribution portion 25 are located in the variable diameter section 43, the air intake structure 40 and the bottom wall 21 can cooperate with each other. By adjusting at least one of the structural forms of the variable diameter section 43 and the bottom wall 21, the transmission path and gas concentration of the reaction gas between the air intake structure 40 and the bottom wall 21 can be greatly changed, thereby facilitating the control of the free molecular collision frequency of the reaction gas in different areas.

[0085] In this embodiment, the top surface of the first distribution portion 24 is set between the top and bottom ends of the variable diameter section 43, or the top surface of the first distribution portion 24 and at least part of the top surface of the second distribution portion 25 are set between the top and bottom ends of the variable diameter section 43, so that the air intake structure 40 and the bottom wall 21 cooperate with each other, and the transmission path and gas concentration of the reaction gas between the air intake structure 40 and the bottom wall 21 can be adjusted by designing the structural form of the variable diameter section 43 and the bottom wall 21, thereby controlling the free molecular collision frequency of the reaction gas in different areas, which is beneficial to controlling the uniformity of the film thickness.

[0086] In some embodiments, the first distributing portion 24 is disposed opposite to the equal-diameter section 42 , and the diameter of the first distributing portion 24 is smaller than the diameter of the equal-diameter section 42 .

[0087] like Fig.10 and Fig.12 As shown, the first distribution portion 24 is arranged opposite to the equal-diameter section 42, that is, the first distribution portion 24 and the equal-diameter section 42 are respectively arranged at the axial center of the bottom wall 21 and the air intake structure 40, and the diameter of the first distribution portion 24 in the X direction of the bottom wall 21 is smaller than the diameter of the equal-diameter section 42 in the axial direction of the air intake structure 40, so that the projection of the first distribution portion 24 on the XOZ plane is within the projection range of the equal-diameter section 42 on the XOZ plane.

[0088] Through the above-mentioned arrangement, a transmission passage for the reaction gas with a relatively stable gas flow cross-section can be formed between the gas inlet structure 40 and the bottom wall 21, and when the first distribution part 24 is located in the variable diameter section 43, it can avoid that the diameter of the first distribution part 24 is too long, resulting in the gas flow cross-section being too small, which in turn causes the flow rate of the reaction gas to be unable to meet the requirements of the vapor deposition process.

[0089] In this embodiment, by arranging the first distribution portion 24 relative to the equal-diameter section 42 and making the diameter of the first distribution portion 24 smaller than the diameter of the equal-diameter section 42, it is convenient to form a transmission passage for the reaction gas with a relatively stable gas flow cross-section between the air intake structure 40 and the bottom wall 21, and avoid the gas flow cross-section being too small to cause the flow rate of the reaction gas to be unable to meet the requirements of the vapor deposition process, thereby ensuring that the spacing space between the air intake structure 40 and the bottom wall 21 can meet the requirements of the vapor deposition process and is conducive to improving the uniformity of the film thickness.

[0090] In other embodiments, a surface of the second distribution portion 25 close to the air intake structure 40 and a surface of the air intake structure 40 close to the gas distribution structure 20 are parallel to each other.

[0091] like Fig.10 and Fig.12 As shown, the surface of the second distribution part 25 close to the air intake structure 40, namely the surface C, and the surface of the air intake structure 40 close to the gas distribution structure 20, namely the surface D, are set to be parallel to each other, so that the surface of the second distribution part 25 close to the air intake structure 40 can also cooperate with the surface of the reducing section 43 close to the bottom wall 21, and a transmission passage of the reaction gas with a relatively stable gas flow cross-section is formed between the air intake structure 40 and the bottom wall 21. Exemplarily, the angle between the surface of the second distribution part 25 close to the air intake structure 40, namely the surface C, and the XOZ plane is set to α, and α can be greater than or equal to 45°, for example, and the angle β between the surface of the air intake structure 40 close to the gas distribution structure 20, namely the surface D, and the XOZ plane is set to be the same as the angle α.

[0092] In this embodiment, the surface of the second distribution portion 25 close to the air intake structure 40 and the surface of the air intake structure 40 close to the gas distribution structure 20 are arranged to be parallel to each other, so that a transmission path for the reaction gas with a relatively stable gas flow cross-section is formed between the air intake structure 40 and the bottom wall 21. The free molecular collision frequency of the reaction gas can be controlled from the dimensions of the transmission path of the reaction gas and the gas concentration, thereby further improving the uniformity of the film thickness.

[0093] In some other embodiments, the first distribution portion 24 can be arranged opposite to the equal-diameter section 42, and the diameter of the first distribution portion 24 can be made smaller than the diameter of the equal-diameter section 42. At the same time, the surface of the second distribution portion 25 close to the air intake structure 40 and the surface of the air intake structure 40 close to the gas distribution structure 20 can be arranged to be parallel to each other, which can further ensure the stability and uniformity of the transmission path of the reaction gas, and control the collision frequency of free molecules of the reaction gas more accurately, thereby further improving the uniformity of the film thickness.

[0094] In some embodiments, the bottom wall 21 includes a first distribution portion 24, a second distribution portion 25, and a third distribution portion 26, wherein a first vertical distance exists between the top surface of the first distribution portion 24 and the bottom end of the equal diameter section 42, a second vertical distance exists between the top surface of the second distribution portion 25 and the hole wall of the variable diameter section 43, and a third vertical distance exists between the top surface of the third distribution portion 26 and the hole wall of the variable diameter section 43. The second vertical distance is greater than the first vertical distance and the third vertical distance.

[0095] like Fig.12 As shown, when the bottom wall 21 includes a first distribution portion 24, a second distribution portion 25 and a third distribution portion 26, along the axial direction of the air intake structure 40, i.e., in the Y direction, there is a first vertical distance H1 between the top surface of the first distribution portion 24 and the bottom end of the equal diameter section 42, i.e., one end close to the bottom wall 21, there is a second vertical distance H2 between the top surface of the second distribution portion 25 and the hole wall of the variable diameter section 43, there is a third vertical distance H3 between the top surface of the third distribution portion 26 and the hole wall of the variable diameter section 43, and the second vertical distance H2 is greater than both the first vertical distance H1 and the third vertical distance H3.

[0096] In this embodiment, the second vertical distance H2 among the first vertical distance H1, the second vertical distance H2 and the third vertical distance H3 is set to the largest of the three, so that more gas can flow to the third distribution part 26, ensuring that the edge area of ​​the wafer has a sufficient concentration of reaction gas, so as to reduce the thickness difference of the film layer between the edge area and the center area of ​​the wafer, thereby improving the uniformity of the film layer thickness.

[0097] In some embodiments, a third heating unit 70 is disposed in the carrier platform 60 . The third heating unit 70 includes a plurality of third sub-heating units 71 embedded in the carrier platform 60 . The plurality of third sub-heating units 71 are arranged along the radial direction of the carrier platform 60 .

[0098] like Figure 2As shown, a third heating unit 70 is also provided in the carrier platform 60, and the third heating unit 70 is used to heat the wafer on the carrier platform 60, so as to provide a suitable reaction temperature for the wafer. The third heating unit 70 includes a plurality of third sub-heating units 71 embedded in the carrier platform 60, and the third sub-heating unit 71 can be, for example, a third heating coil, so as to achieve the heating effect of the third sub-heating unit 71 by means of the heating coil. The plurality of third sub-heating units 71 are arranged along the radial direction of the carrier platform 60, i.e., the X direction and the Z direction, so that different third sub-heating units 71 correspond to different positions in the radial direction of the carrier platform 60, which can have a good temperature control effect on the wafers in each area in the radial direction, and facilitate the control of the temperature distribution of the vapor deposition equipment in the radial direction of the carrier platform 60 to match the film thickness control requirements.

[0099] For example, Fig.14 As shown, when the third heating section 70 is needed to reduce the thickness difference between the film layer in the center area and the edge of the wafer, two third sub-heating sections 71, namely a third sub-heating section 71-A and a third sub-heating section 71-B, which are radially arranged along the carrier platform 60, can be set, and the heating temperatures of the third sub-heating section 71-A and the third sub-heating section 71-B are set to 305°C and 300°C, respectively, so as to increase the frequency of free molecule collisions of the reaction gas in the center area of ​​the wafer by increasing the temperature, thereby reducing the adsorption of the reaction gas on the center area of ​​the wafer.

[0100] In this embodiment, multiple third sub-heating sections 71 embedded in the carrier platform 60 are used as third heating sections 70, and the multiple third sub-heating sections 71 are arranged along the radial direction of the carrier platform 60, so as to facilitate the control of the temperature distribution of the vapor deposition equipment in the radial direction of the carrier platform 60 to match the film thickness control requirements, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, thereby controlling the free molecule collision frequency of the reaction gas in different areas, which is beneficial to improving the uniformity of the film thickness.

[0101] In some embodiments, Figure 2 As shown, the vapor deposition device also includes a second gas inlet 80 and a gas outlet 90. The second gas inlet 80 is used to introduce non-reactive gas (such as argon gas), and the non-reactive gas is used to sweep the residual reactive gas after the film layer is formed. The gas outlet 90 is used to discharge the non-reactive gas and the residual reactive gas. A conical speed regulating structure 81 is provided at the second gas inlet 80. The conical speed regulating structure 81 can move axially relative to the second gas inlet 80 to adjust the flow area of ​​the second gas inlet 80, thereby realizing the flow regulation of the non-reactive gas. For example, in Figure 2 In the illustrated embodiment, the conical speed regulating structure 81 can reduce the flow rate of the non-reactive gas when it moves downward, and can increase the flow rate of the non-reactive gas when it moves upward.

[0102] It should be noted that, in order to improve the uniformity of the film thickness, when the above-mentioned vapor deposition equipment is used to form a film on a wafer, the temperature of the reaction gas before entering the vapor deposition equipment can be adjusted, or the flow rate of the non-reactive gas can be adjusted to control the free molecular collision frequency of the reaction gas and thus control the thickness of the film. For example, the storage temperature of the storage device for the reaction gas connected to the first air inlet 10 can be increased to increase the free molecular collision frequency of the reaction gas by increasing the temperature, thereby reducing the adsorption of the reaction gas by the wafer. The flow rate of the non-reactive gas can also be reduced to reduce the cleaning rate of the reaction gas in the edge area, thereby increasing the thickness of the film in the edge area of ​​the wafer.

[0103] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the application herein. The present application is intended to cover any variations, uses or adaptations of the present application, which follow the general principles of the present application and include common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only.

[0104] It should be understood that the present application is not limited to the exact construction that has been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof.

Claims

1. A vapor deposition device, characterized in that: The vapor deposition equipment comprises: First air inlet; A gas distribution structure, the gas distribution structure comprising a bottom wall and a side wall arranged around the bottom wall, the bottom wall is provided with a plurality of gas holes, and the side wall is provided with a first heating portion surrounding the bottom wall; an air intake structure, the air intake structure being arranged in a space enclosed by the bottom wall and the side wall, the air intake structure being provided with a gas passage connecting the first air intake port and each of the air holes, and the air intake structure being provided with a second heating portion surrounding the gas passage; The carrying platform is used for carrying the wafer, and each of the air holes faces the carrying platform.

2. The vapor deposition apparatus according to claim 1, characterized in that: The first heating part includes at least one first sub-heating part embedded in the side wall, and each of the first sub-heating parts includes a first heating coil surrounding the bottom wall; or, each of the first sub-heating parts includes at least two groups of first heating units, and each group of the first heating units includes at least two first arc-shaped heating wires, and along the circumference of the gas distribution structure, the first arc-shaped heating wires of different groups of first heating units are arranged in an interlaced manner.

3. The vapor deposition apparatus according to claim 2, characterized in that: A plurality of the first sub-heating parts are provided, and the plurality of the first sub-heating parts are arranged at intervals along the axial direction of the gas distribution structure.

4. The vapor deposition apparatus according to claim 1, characterized in that: The second heating portion includes a plurality of second sub-heating portions embedded in the air intake structure, and the plurality of second sub-heating portions are arranged along a radial direction of the air intake structure.

5. The vapor deposition apparatus according to claim 4, characterized in that: Each of the second sub-heating parts includes at least one second heating coil surrounding the gas channel; or, each of the second sub-heating parts includes at least two groups of second heating units, each group of second heating units includes at least two second arc-shaped heating wires, and along the circumference of the air intake structure, the second arc-shaped heating wires of different groups of second heating units are arranged in an interlaced manner.

6. The vapor deposition apparatus according to claim 5, characterized in that: At least one of the second sub-heating parts includes a plurality of the second heating coils, and the plurality of the second heating coils in the same second sub-heating part are arranged at intervals along the axial direction of the air intake structure.

7. The vapor deposition apparatus according to any one of claims 1 to 6, characterized in that: The gas channel includes a constant diameter section and a variable diameter section, one end of the constant diameter section is connected to the first air inlet, and the other end of the constant diameter section is connected to one end of the variable diameter section, the diameter of the variable diameter section gradually increases from the constant diameter section toward the bottom wall, and there is a preset spacing distance between the air intake structure and the bottom wall.

8. The vapor deposition apparatus according to claim 7, characterized in that: The bottom wall comprises a first distribution portion and a second distribution portion which are arranged in sequence from the center to the edge of the bottom wall, wherein in the direction from the center to the edge of the bottom wall, the length of the first distribution portion is smaller than the length of the second distribution portion, the lengths of the air holes in the first distribution portion are the same, and the lengths of the air holes in the second distribution portion gradually decrease; or, The bottom wall includes a first distribution portion, a second distribution portion and a third distribution portion which are arranged in sequence from the center to the edge of the bottom wall, wherein in the direction from the center to the edge of the bottom wall, the length of the first distribution portion is smaller than the length of the second distribution portion, the lengths of the air holes in the first distribution portion are all the same, the lengths of the air holes in the third distribution portion are all the same, the lengths of the air holes in the first distribution portion are larger than the lengths of the air holes in the third distribution portion, and the lengths of the air holes in the second distribution portion gradually decrease.

9. The vapor deposition apparatus according to claim 8, characterized in that: The top surface of the first distribution portion is located between the top end and the bottom end of the diameter-changing section; or, The top surface of the first distribution portion and at least a portion of the top surface of the second distribution portion are located between the top end and the bottom end of the diameter-changing section.

10. The vapor deposition apparatus according to claim 8, characterized in that: The first distribution portion is arranged opposite to the equal diameter section, and the diameter of the first distribution portion is smaller than the diameter of the equal diameter section; and / or, A surface of the second distribution portion close to the air intake structure and a surface of the air intake structure close to the gas distribution structure are parallel to each other.

11. The vapor deposition apparatus according to claim 8, characterized in that: The bottom wall includes the first distribution part, the second distribution part and the third distribution part, a first vertical distance is formed between the top surface of the first distribution part and the bottom end of the constant diameter section, a second vertical distance is formed between the top surface of the second distribution part and the hole wall of the variable diameter section, and a third vertical distance is formed between the top surface of the third distribution part and the hole wall of the variable diameter section; The second vertical distance is greater than the first vertical distance, and the second vertical distance is greater than the third vertical distance.

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