Chemical vapor deposition device and method thereof

Abstract

The invention discloses a chemical vapor deposition device and method, the device comprises: a reaction chamber, the reaction chamber is surrounded by a top wall and a bottom wall of the reaction chamber, the top wall comprises a transparent top plate and a metal top plate arranged on the outer side of the transparent top plate, the metal top plate is provided with a plurality of first grooves for accommodating a plurality of radiation heat sources, and the radiation heat sources are arranged in the first grooves; a first elastic sealing device is arranged between the metal top plate and the transparent top plate, the metal top plate is further provided with a first heat conduction gas inlet channel, and the first heat conduction gas inlet channel is provided with a first flow adjusting device used for controlling the air pressure of heat conduction gas conveyed into the first grooves. The metal top plate is further provided with a cooling channel, the cooling channel contains a cooling medium, and the cooling medium is used for cooling the transparent top plate and / or the metal top plate. The chemical vapor deposition device further comprises a controller used for sending an instruction to the first flow adjusting device, so that the first flow adjusting device controls the heat conduction gas in the first groove to have different gas pressures in the first process and the second process. The device has the advantages that the device is favorable for reducing the air pressure difference required to be borne by the transparent top plate, does not influence the heat transfer efficiency of a radiation heat source, is favorable for the heating uniformity of a reaction area in a reaction chamber, ensures the deposition uniformity of a substrate film and improves the yield of substrate process production.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a chemical vapor deposition device and a method thereof. Background Art

[0002] At present, plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes are often used to micro-process semiconductor process parts or substrates, such as manufacturing flexible display screens, flat panel displays, light-emitting diodes, solar cells, etc. Micro-processing manufacturing includes a variety of different processes and steps, among which the most widely used is the chemical vapor deposition process, which can deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. This process is generally carried out in a high vacuum reaction chamber.

[0003] As the feature size of semiconductor devices continues to shrink and the integration of devices continues to increase, higher and higher requirements are placed on the uniformity of chemical vapor deposition films. Although chemical vapor deposition equipment has been upgraded many times and its performance has been greatly improved, there are still many deficiencies in the uniformity of thin film deposition. In particular, as the size of substrates continues to increase, the existing vapor deposition methods and equipment can no longer meet the uniformity requirements of thin films.

[0004] During the thin film deposition process, various process conditions will affect the uniformity of thin film deposition on the substrate surface, such as the direction and distribution of the reaction gas flow, the heating temperature field of the substrate, the pressure distribution in the reaction chamber, etc. If the process environment of the reaction area in the reaction chamber is not completely consistent, the film deposited on the substrate surface will produce undesirable phenomena such as uneven thickness, uneven composition, and uneven physical properties, thereby reducing the yield rate of substrate production. Therefore, it is necessary to improve the existing chemical vapor deposition device to improve the uniformity of substrate film deposition. In addition, for the epitaxial growth process of silicon or silicon germanium materials, since these epitaxial materials are usually the bottom layer of semiconductor devices, the critical dimension (CD) is extremely small, usually only a few nanometers, and cannot withstand long-term high temperature, otherwise it will cause damage to the semiconductor device, so it is necessary to heat the substrate in a very short time to a temperature sufficient for epitaxial growth of silicon materials, such as 600-700 degrees. Due to this harsh temperature increase requirement, the silicon epitaxial process usually uses a high-power radiation heat source to heat the substrate located in the reaction chamber through a transparent reaction chamber composed of quartz. Since the pressure inside the reaction chamber is much lower than the atmospheric pressure outside the quartz reaction chamber, in order to maintain the reaction chamber structure from deformation or fragmentation due to the huge pressure difference between the inside and outside of the chamber, it is necessary to design a pressure-resistant structure on the chamber. For example, multiple reinforcing ribs are arranged around the reaction chamber with flat upper and lower quartz chamber walls, or the upper and lower quartz chamber walls are designed to be dome-shaped to resist atmospheric pressure. These quartz outer walls usually have a chamber wall thickness of 6-8mm to resist atmospheric pressure while allowing as much radiation energy as possible to penetrate into the reaction chamber. These two structures have their own advantages and disadvantages. The flat-plate chamber can ensure the stable distribution of the airflow when it flows through the entire chamber, but the large number of reinforcing ribs (more than 10) on the top will block the heating radiation light, resulting in uneven temperature distribution; for the dome-shaped reaction chamber, the temperature distribution is more uniform, but the airflow will produce a large amount of chaotic turbulence when it flows into the dome-shaped reaction area, making the airflow distribution difficult to control.

[0005] In order to solve the above-mentioned problems of thermal field, flow field and quartz cavity pressure, the prior art proposes a cavity-in-cavity design, please refer to Figure 1, is a chemical vapor deposition device, the device comprises a reaction chamber 110, the reaction chamber body of the reaction chamber 110 comprises an upper chamber wall 111 located at the top, a lower chamber wall 112 located at the bottom, and side chamber walls 113 extending on both sides between the upper chamber wall 111 and the lower chamber wall 112, the area surrounded by the upper chamber wall 111, the lower chamber wall 112 and the side chamber wall 113 is a reaction area, the upper chamber wall 111 and the lower chamber wall 112 are made of an optically transparent or translucent material that can transmit thermal radiation, the substrate W is located on a substrate tray 120 in the reaction area, the reaction gas for deposition flows into the reaction chamber 110 from the gas inlet opening, the chemical vapor deposition process is performed in the reaction area, and the reaction chamber 110 flows out of the exhaust opening. The device also comprises a plurality of radiation heat sources 130 for providing heat energy to the reaction chamber 110 and the substrate W, each of the radiation heat sources 130 is arranged outside the reaction chamber 110 to heat the reaction chamber 110 and the substrate W therein. The device also includes an outer shell 140, and a receiving space 150 is formed between the inner wall of the outer shell 140 and the outer wall of the reaction chamber 110. The receiving space 150 and the reaction chamber 110 are connected to a gas pressure adjustment device, which is used to independently adjust the gas pressure in the receiving space 150 and the reaction chamber 110. A plurality of radiation heat sources 130 are arranged in the receiving space 150. A gas driving device 160 is also arranged in the receiving space 150 to strengthen the gas flow in the receiving space 150 and cool the cavity wall at the same time. Since the gas pressure in the receiving space 150 is adjustable, the upper cavity wall 111 and the lower cavity wall 112 can be set to a flat plate shape, thereby ensuring that the flow field and thermal field in the reaction area are uniform. However, this device still has the following problems: First, the design of this cavity-in-cavity is bulky and expensive; second, cooling gas needs to be introduced into the accommodating space 150 to cool the upper cavity wall 111 and the lower cavity wall 112, but cooling by convection requires a separate pipeline for the cooling gas, and the convection cooling method may still cause local overheating of the cavity wall, resulting in poor cooling effect; third, the radiation heat source 130 is far away from the substrate W to be heated and the reaction chamber, which reduces the heating efficiency; fourth, although the quartz cavity wall can be made into a nearly flat shape due to the air pressure adjustment of the accommodating space 150, it is still impossible to be completely flat, and the quartz cavity wall still needs to have a certain curvature to ensure the pressure-bearing effect. Summary of the invention

[0006] The object of the present invention is to provide a chemical vapor deposition device and a method thereof, which reduces the distance between the radiation heat source and the cavity wall, greatly increasing the heating efficiency; at the same time, a cooling fluid channel is provided in the metal plate supporting the cavity wall, thereby improving the cooling efficiency of the cavity wall; and, by adjusting the air pressure in the groove and the mechanical support of the metal top plate, the bottom surface of the transparent top plate can be made into a horizontal shape, or the transparent top plate can be made thinner, so that the temperature of the bottom surface and the top surface of the transparent top plate are closer, further improving the heating and cooling efficiency, and ensuring the uniformity of the flow field and the thermal field in the reaction area; in addition, due to the simplification of the cooling gas pipeline and the heating module, the cost of the device can also be greatly reduced.

[0007] In order to achieve the above object, the present invention is implemented by the following technical solutions:

[0008] The present invention provides a chemical vapor deposition device, comprising:

[0009] The reaction chamber is surrounded by a top wall and a bottom wall of the reaction chamber, and also includes an air inlet opening and an exhaust opening;

[0010] The top wall comprises a transparent top plate and a metal top plate arranged outside the transparent top plate, a plurality of first grooves are arranged on the metal top plate for accommodating a plurality of radiation heat sources, a first elastic sealing device is arranged between the metal top plate and the transparent top plate, a first heat-conducting gas inlet channel is also arranged on the metal top plate, a first valve is arranged on the first heat-conducting gas inlet channel, a first heat-conducting gas exhaust channel is also arranged on the metal top plate, the first heat-conducting gas exhaust channel is connected to a vacuum pump, a first flow regulating device is arranged on the first heat-conducting gas inlet channel or the first heat-conducting gas exhaust channel, the first flow regulating device is used to control the gas pressure of the heat-conducting gas delivered to the plurality of first grooves, a cooling channel is also arranged on the metal top plate, the cooling channel accommodates a cooling medium, and the cooling medium is used to cool the transparent top plate and / or the metal top plate;

[0011] The chemical vapor deposition device further includes a controller for sending instructions to the first flow regulating device so that the first flow regulating device controls the heat-conducting gas in the first groove to have different gas pressures during the first process and the second process.

[0012] Optionally, a gas pressure detection device is further provided on the first heat-conducting gas inlet channel or the first heat-conducting gas exhaust channel, for detecting the gas pressure of the heat-conducting gas in the first groove.

[0013] Optionally, the transparent top plate has a horizontal bottom surface.

[0014] Optionally, the bottom surface of the metal top plate is located between adjacent first grooves, and when the first process is performed, a gap is provided between the bottom surface of the metal top plate and the top surface of the transparent top plate, and when the second process is performed, the bottom surface of the metal top plate and the top surface of the transparent top plate can match and fit each other.

[0015] Optionally, the first process is an in-situ cleaning process of the reaction chamber.

[0016] Optionally, the second process is a reaction chamber pre-coating process or a deposition process.

[0017] Optionally, when performing the first process, the first process temperature in the reaction chamber is 800-1100°C.

[0018] Optionally, when performing the second process, the second process temperature in the reaction chamber is 400-700°C.

[0019] Optionally, the bottom wall comprises a transparent bottom plate and a metal bottom plate supporting the transparent bottom plate, a plurality of second grooves are arranged on the metal bottom plate for accommodating a plurality of radiation heat sources, a second elastic sealing device is arranged between the metal bottom plate and the transparent bottom plate, a second heat-conducting gas inlet channel is also arranged on the metal bottom plate, a second valve is arranged on the second heat-conducting gas inlet channel, a second heat-conducting gas exhaust channel is also arranged on the metal bottom plate, the second heat-conducting gas exhaust channel is connected to a vacuum pump, a second flow regulating device is arranged on the second heat-conducting gas inlet channel or the second heat-conducting gas exhaust channel, and the second flow regulating device is used to control the gas pressure of the heat-conducting gas delivered to the plurality of second grooves;

[0020] The chemical vapor deposition device further includes a controller for sending instructions to the second flow regulating device so that the second flow regulating device controls the heat-conducting gas in the second groove to have different gas pressures during the first process and the second process.

[0021] Optionally, the first elastic sealing device and the second elastic sealing device are O-rings.

[0022] Optionally, the material of the metal top plate is aluminum or aluminum alloy, and the material of the transparent top plate is quartz.

[0023] Optionally, the material of the metal bottom plate is aluminum or aluminum alloy, and the material of the transparent bottom plate is quartz.

[0024] Optionally, the surface of the first groove is coated with a gold coating.

[0025] Optionally, the surface of the second groove is coated with a gold coating.

[0026] Optionally, a substrate tray is horizontally arranged in the reaction chamber for supporting a substrate, and the top wall and the bottom wall are connected by a flange to form the reaction chamber, and the flange is provided with the air inlet opening and the exhaust opening.

[0027] Optionally, the bottom wall protrudes downward to form an arch or cone shape, and the material of the bottom wall is quartz.

[0028] The present invention also provides a method for deposition using the chemical vapor deposition device, comprising the following steps:

[0029] Using the first flow regulating device to regulate the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a first pressure;

[0030] performing a reaction chamber in-situ cleaning process in the reaction chamber;

[0031] Using the first flow regulating device to adjust the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a second pressure;

[0032] performing a reaction chamber pre-coating process in the reaction chamber;

[0033] transferring the substrate to a substrate tray in the reaction chamber;

[0034] performing a deposition process in the reaction chamber;

[0035] The substrate is transferred out of the reaction chamber.

[0036] Compared with the prior art, the present invention has the following advantages:

[0037] In a chemical vapor deposition device and method of the present invention, the pressure regulated by the valve in the device can reduce the pressure difference that the transparent top plate needs to withstand. The mechanical support of the metal top plate makes the force that the transparent top plate needs to withstand more uniform and dispersed, so that the transparent plate can be made flat and thin, which helps to improve the heating efficiency of the radiation heat source and the uniformity of the airflow in the reaction chamber, thereby ensuring the effect of substrate thin film deposition.

[0038] The radiant heat source of the present invention is close to the substrate tray, so the efficiency of heating the substrate and the substrate tray is greatly increased. At the same time, by controlling the gap between the metal top plate and the transparent top plate, the heating efficiency and cooling efficiency can be adjusted based on different process temperature requirements.

[0039] The cooling water flows in the cooling pipe of the present invention, and the cooling effect thereof is better than the cooling effect of the gas convection cooling in the prior art. At the same time, the structural design of the cooling pipe and the heating unit can also be greatly simplified, saving costs.

[0040] The present invention can also adjust the heat exchange efficiency by adjusting the type and ratio of the heat-conducting gas in the groove (for example, He or N can be filled). 2 , or a mixture of the two), thereby further improving the temperature adjustment effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A simplified schematic diagram of a chemical vapor deposition device in the prior art;

[0042] Figure 2 is a simplified schematic diagram of a chemical vapor deposition apparatus of the present invention;

[0043] Figure 3 It is a schematic structural diagram of the top wall of the chemical vapor deposition device of the present invention under the first process;

[0044] Figure 4 It is a schematic structural diagram of the top wall of the chemical vapor deposition device of the present invention when it is in the second process;

[0045] Figure 5 A simplified schematic diagram of a chemical vapor deposition apparatus according to another embodiment of the present invention;

[0046] Figure 6 The figure is a schematic flow chart of the method for using the chemical vapor deposition device of the present invention. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0049] It should be noted that the drawings are all in very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining an embodiment of the present invention.

[0050] Please also refer to Figure 2 and Figure 3 , is a chemical vapor deposition device provided by the present invention, wherein the reaction chamber 200 of the device comprises a top wall 211 and a bottom wall 212, wherein the top wall comprises a transparent top plate 202 and a metal top plate 201 arranged outside the transparent top plate, wherein the metal top plate 201 is provided with a plurality of first grooves 204 for accommodating a plurality of radiation heat sources 205, wherein an elastic sealing device 203 is provided between the metal top plate 201 and the transparent top plate 202, and wherein the metal top plate 201 is also provided with a first heat-conducting gas inlet channel 308, the first heat-conducting gas inlet channel is provided with a first valve 307, the first valve 307 controls the inlet switch, the metal top plate 201 is also provided with a first heat-conducting gas exhaust channel 313, the first heat-conducting gas exhaust channel 313 is connected to a vacuum pump, the first heat-conducting gas exhaust channel 313 is provided with a third valve 312 and a first flow regulating device 314, the third valve 312 is used to control the exhaust switch, and the first flow regulating device 314 is a device for providing flow and pressure control. Since the space between the transparent top plate and the metal top plate is small, the temperature of the heat-conducting gas therein will also change rapidly during the temperature rise and fall process, so the first flow regulating device 314 is preferably a pressure control device with a relatively fast response, which can be a needle valve, UPC or PCV. In some embodiments, the first flow regulating device 314 can also be provided on the first heat-conducting gas inlet channel 308.

[0051] A substrate tray 209 is horizontally arranged in the reaction chamber 200 for supporting the substrate W. The substrate tray is supported by a main shaft 215. The top wall 211 and the bottom wall 212 are connected by a flange 213 to form the reaction chamber 200. The flange 213 is provided with an inlet opening and an exhaust opening, and the inlet opening and the exhaust opening are arranged opposite to each other. When the process is carried out, the process gas enters the reaction chamber 200 from the inlet opening and then is discharged from the exhaust opening. A bushing 210 is also arranged around the flange 213. The bushing 210 is made of quartz material and is used to prevent the radiant heat source 205 from directly heating the flange 213, and to isolate the substrate tray 209 and the flange 213 from heat transfer to prevent the edge temperature of the substrate from being too low.

[0052] Specifically, the transparent top plate 202 is made of an optically transparent or translucent material that can transmit thermal radiation (such as a quartz material that is transparent to a specific infrared band), and the radiation heat source 205 can be a high-intensity tungsten filament lamp with a transparent quartz shell and containing a halogen gas such as iodine. Only a small part of the radiation heat energy generated by the high-intensity tungsten filament lamp is absorbed by the transparent top plate 202, so as to ensure that the heat energy generated by each radiation heat source 205 reaches the substrate W and the substrate tray 209 in the reaction chamber 200 to the maximum extent. The surface of the first groove 204 is also coated with a gold coating to enhance the reflection effect.

[0053] The first groove 204 may be arranged along the circumference of the metal top plate 201. The plurality of first grooves 204 may be connected to each other or may not be connected to each other. The radiation heat source 205 may be arranged in the first groove 204 along the circumference of the metal top plate 201. The plurality of radiation heat sources 205 may be arranged in the same first groove 204 or may be arranged separately in the first grooves 204 corresponding to each other. The present invention does not limit the arrangement of the first grooves 204 and the radiation heat sources 205, and any arrangement that can ensure uniformity of thermal field distribution is acceptable.

[0054] In some embodiments, the metal top plate 201 is made of aluminum or aluminum alloy. In order to prevent diffusion between the aluminum material of the metal top plate 201 and the gold coating, an anti-diffusion layer is provided between the aluminum material and the gold coating. The material of the anti-diffusion layer can be nickel.

[0055] A preheating ring 214 is further arranged around the substrate tray 209 , with a gap between the preheating ring 214 and the substrate tray 209 . The outer edge of the preheating ring 214 is placed on the bushing 210 . The preheating ring 214 is used to preheat the process gas entering the reaction chamber 200 .

[0056] The chemical vapor deposition apparatus further includes a controller for sending instructions to the first flow regulating device 314, so that the first flow regulating device 314 controls the heat-conducting gas in the first groove 204 to have different pressures during the first process and the second process. A pressure detection device 309 is also provided on the first heat-conducting gas inlet channel 308, for detecting the pressure of the heat-conducting gas in the first groove 204. In some embodiments, the pressure detection device 309 can also be provided on the first heat-conducting gas exhaust channel 313.

[0057] The metal top plate is also provided with a cooling channel 206, which contains a cooling medium, and the cooling medium flows in the cooling channel 206 to cool the transparent top plate 202 and / or the metal top plate 201. The cooling medium can be water, salt water, Galden or other cooling medium.

[0058] The first process may be an in-situ cleaning process of the reaction chamber. Specifically, before the deposition process is performed in the reaction chamber 200, a cleaning process is first performed in the reaction chamber to remove the sediments deposited on the inner wall of the chamber, the substrate tray 209, and the preheating ring 214 during the previous deposition process, so as to prevent these sediments from falling off during the deposition process and affecting the film quality.

[0059] Specifically, when the in-situ cleaning process is performed, the cleaning gas enters the reaction chamber 200 from the gas inlet opening and then is discharged from the reaction chamber 200 from the exhaust opening. The cleaning gas may be a halogen-containing gas. Alternatively, the cleaning gas may be hydrogen chloride.

[0060] In some embodiments, when the first process is performed, the first process has a first process temperature, and the first process temperature is 800-1100° C.

[0061] Please refer to Figure 3 , the bottom surface of the metal top plate is provided between the adjacent first grooves 204, and when the first process is performed, a gap 310 is provided between the bottom surface of the metal top plate 201 and the top surface of the transparent top plate 202. At this time, the cooling medium flowing in the cooling channel 206 only cools the metal top plate 201, but does not cool the transparent top plate 202, so as to enhance the heating effect of the radiation heat source 205. Specifically, the controller sends an instruction to the first flow regulating device 314, so that the first flow regulating device 314 controls the heat-conducting gas entering the first groove 204 to have a first gas pressure under the first process, so as to form the gap 310. The size of the gap 310 is approximately less than 2 mm, which can be covered by the deformation range of the elastic sealing device 203, and will not cause gas leakage. Optionally, the elastic sealing device 203 can be an O-ring, and the material of the elastic sealing device 203 can be fluororubber (FKM), perfluororubber (FFKM) or silicone.

[0062] In order to prevent the transparent top plate 202 from being broken due to the excessive pressure difference between the top surface and the bottom surface, the difference between the first pressure of the heat-conducting gas entering the first groove 204 and the process pressure inside the reaction chamber should not be too large. Specifically, the difference between the first pressure and the process pressure should not be greater than 100 torr to avoid the transparent top plate 202 from being broken. In addition, there is no lower limit for the first pressure, and the magnitude of the first pressure is determined by the size of the gap 310, the elasticity of the elastic sealing device, and the pressure difference between the first groove 204 and the process pressure in the reaction chamber.

[0063] The second process may be a reaction chamber pre-coating process or a deposition process. Specifically, after the in-situ cleaning of the chamber is completed, before the formal deposition process is carried out, a pre-coating process (pre-coat) is required for the parts in the reaction chamber to ensure the stability of the chamber environment during the deposition process and to avoid instability in the quality of thin film deposition in the early stage of the deposition process. The reaction gas of the pre-coating process is consistent with the gas used in the deposition process. For example, in the silicon epitaxial deposition process, the process gas used is silane, and in the pre-coating process, silane is also used as the pre-coating process gas. When performing the pre-coating process, silane gas is deposited on the preheating ring 214 and the substrate tray 209.

[0064] Specifically, when the reaction chamber pre-coating process and the deposition process are performed, the process gas enters the reaction chamber 200 from the gas inlet opening and then is discharged from the reaction chamber 200 from the exhaust opening. The process gas may be at least one of silane, germane or dichlorosilane (DCS).

[0065] In some embodiments, the second process has a second process temperature, and the second process temperature is 400-700°C.

[0066] Please refer to Figure 4 When the second process is performed, the bottom surface of the metal top plate 201 and the top surface of the transparent top plate 202 are matched and attached to each other. At this time, the cooling medium flowing in the cooling channel 206 cools the metal top plate 201 and the transparent top plate 202 at the same time to enhance the cooling effect on the transparent top plate 202. Specifically, the controller sends an instruction to the first flow regulating device 314, so that the first flow regulating device 314 controls the heat-conducting gas entering the first groove 204 to have the second gas pressure under the second process.

[0067] In order to make the bottom surface of the metal top plate 201 and the top surface of the transparent top plate 202 match each other, the air pressure of the second air pressure should be as small as possible to ensure that the bottom surface of the metal top plate 201 can be closely attached to the top surface of the transparent top plate 202, and to ensure the thermal conductivity and cooling efficiency between the two. The second air pressure does not exceed 100 torr. In addition, in order to ensure the thermal conductivity of the heat-conducting gas, the second air pressure is not less than its threshold. Optionally, when the heat-conducting gas is helium, the second air pressure is not less than 10 torr.

[0068] To prevent the transparent top plate 202 from cracking due to an excessive air pressure difference between the top surface and the bottom surface, the second air pressure of the heat-conducting gas entering the first groove 204 and the process air pressure inside the reaction chamber should not be too large. Specifically, the difference between the second air pressure and the process air pressure should not be greater than 100 torr to avoid cracking of the transparent top plate 202.

[0069] Based on the adjustment of the gas pressure in the first groove 204 by the first flow rate regulating device 314 and the mechanical support of the metal top plate 201 for the transparent top plate 202, the bottom surface of the transparent top plate 202 (i.e., the surface located inside the reaction chamber) can be made horizontal. The horizontal bottom surface of the transparent top plate 202 with a horizontal shape ensures the uniformity of the process gas flow field distribution in the process area (the area between the substrate tray 209 and the bottom surface of the transparent top plate 202) inside the reaction chamber. In addition, the radiation heat source 205 passes through the uniformly textured transparent top plate 202 to heat the substrate and the substrate tray 209, which also ensures the uniformity of the thermal field distribution inside the chamber.

[0070] Since the bottom wall of the reaction chamber 200 is far from the process area and deposition is unlikely to occur on the inner surface of the bottom wall during the deposition process, the requirements for the flow field and thermal field uniformity of the bottom wall of the reaction chamber 200 are not as stringent as those of the top wall. The bottom wall can be the structure of the bottom wall 212 as Figure 2 shown. The bottom wall 212 includes a transparent bottom plate 208 and a metal bottom plate 207. The materials and structures of the bottom wall 212, the transparent bottom plate 208, and the metal bottom plate 207 are similar to those of the top wall 211, the transparent top plate 202, and the metal top plate 201, and will not be elaborated here. The bottom wall can also be the structure of the bottom wall 501 as Figure 5 shown. The bottom wall 501 has a downward convex structure to withstand the air pressure difference. The bottom wall 501 bulges downward to form an arched or conical shape, and the material of the bottom wall 501 is quartz. The bottom wall 501, the top wall 211, and the flange 213 together form another chemical vapor deposition device 500. Of course, the structure of the bottom wall can also be other structures, as long as it can withstand the air pressure difference and can allow the radiation heat source to pass through the bottom wall to heat the substrate tray 209. In addition, the control method of the bottom wall under the first process and the second process can be the same as that of the top wall, or a constant pressure can be maintained, which is not limited in the present invention.

[0071] Based on the above chemical vapor deposition device 200 (500), the present invention also provides a method for deposition using the chemical vapor deposition device. Please refer to Figure 6 and the method includes the steps:

[0072] S10: Using the first flow regulating device to regulate the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a first pressure.

[0073] Specifically, according to the process gas pressure in the reaction chamber during the first process, the first gas pressure is set so that the pressure difference between the first gas pressure and the process gas pressure is no more than 100 torr. At the same time, the first gas pressure allows a gap 310 to exist between the transparent top plate 202 and the metal top plate 201, and the size of the gap 310 is less than 2 mm.

[0074] S20: performing a reaction chamber in-situ cleaning process in the reaction chamber.

[0075] Specifically, a cleaning gas is introduced into the reaction chamber to perform an in-situ cleaning process on the reaction chamber. The cleaning process has a first process temperature, which is 800-1100° C. The cleaning gas may be a halogen-containing gas. Optionally, the cleaning gas may be hydrogen chloride.

[0076] S30: Using the first flow regulating device to regulate the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a second pressure.

[0077] Specifically, according to the process pressure in the reaction chamber during the second process, the second pressure is set so that the pressure difference between the second pressure and the process pressure is no more than 100 torr. At the same time, the second pressure makes the bottom surface of the metal top plate 201 and the top surface of the transparent top plate 202 match each other.

[0078] S40: performing a reaction chamber pre-coating process in the reaction chamber;

[0079] Specifically, a process gas is introduced into the reaction chamber to perform a pre-coating process on the reaction chamber. The pre-coating process has a second process temperature, and the second process temperature is 400-700° C. The process gas may be silane.

[0080] S50: transferring the substrate to a substrate tray in the reaction chamber;

[0081] Specifically, the substrate to be processed is transferred into the reaction chamber through a robot arm in a vacuum transfer chamber connected to the reaction chamber and placed on a substrate tray.

[0082] S60: performing a deposition process in the reaction chamber;

[0083] Specifically, a process gas is introduced into the reaction chamber, and a deposition process is performed in the reaction chamber. The deposition process has a second process temperature, and the second process temperature is 400-700° C. The process gas may be silane.

[0084] S70: Transfer the substrate out of the reaction chamber.

[0085] Specifically, the substrate after deposition is transferred out of the reaction chamber by a robot arm in a vacuum transfer chamber connected to the reaction chamber.

[0086] Embodiment 1

[0087] During the first process, the first flow regulating device 314 controls the first gas pressure of the heat-conducting gas entering the first groove 204 to be 400-600 torr. At this time, the chamber pre-coating process is performed in the reaction chamber, the process gas pressure of the pre-coating process is 500-650 torr, and the first process temperature is 800-1100° C. At this time, the pressure difference between the top surface and the bottom surface of the transparent top plate 202 is less than 100 torr, and there is a gap 310 between the top surface of the transparent top plate 202 and the bottom surface of the metal top plate 201, so the cooling channel 206 only cools the metal top plate 201, thereby enhancing the heating efficiency of the radiation heat source 205.

[0088] During the second process, the first flow regulating device 314 controls the first gas pressure of the heat-conducting gas entering the first groove 204 to be 10 torr. At this time, the chamber deposition process is performed in the reaction chamber, the process gas pressure of the deposition process is 10-100 torr, and the second process temperature is 400-700° C. At this time, the pressure difference between the top surface and the bottom surface of the transparent top plate 202 is less than 100 torr, and the top surface of the transparent top plate 202 and the bottom surface of the metal top plate 201 are attached to each other, so the cooling channel 206 cools the metal top plate 201 and the transparent top plate 202 at the same time, thereby enhancing the cooling efficiency.

[0089] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A chemical vapor deposition device, It is characterized in that Include: The reaction chamber is surrounded by a top wall and a bottom wall of the reaction chamber, and also includes an air inlet opening and an exhaust opening; The top wall comprises a transparent top plate and a metal top plate arranged outside the transparent top plate, a plurality of first grooves are arranged on the metal top plate for accommodating a plurality of radiation heat sources, a first elastic sealing device is arranged between the metal top plate and the transparent top plate, a first heat-conducting gas inlet channel is also arranged on the metal top plate, a first valve is arranged on the first heat-conducting gas inlet channel, a first heat-conducting gas exhaust channel is also arranged on the metal top plate, the first heat-conducting gas exhaust channel is connected to a vacuum pump, a first flow regulating device is arranged on the first heat-conducting gas inlet channel or the first heat-conducting gas exhaust channel, the first flow regulating device is used to control the gas pressure of the heat-conducting gas delivered to the plurality of first grooves, a cooling channel is also arranged on the metal top plate, the cooling channel accommodates a cooling medium, and the cooling medium is used to cool the transparent top plate and / or the metal top plate; The chemical vapor deposition device further includes a controller for sending instructions to the first flow regulating device so that the first flow regulating device controls the heat-conducting gas in the first groove to have different gas pressures during the first process and the second process.

2. The chemical vapor deposition apparatus according to claim 1, It is characterized in that A gas pressure detection device is also provided on the first heat-conducting gas inlet passage or the first heat-conducting gas exhaust passage, for detecting the gas pressure of the heat-conducting gas in the first groove.

3. The chemical vapor deposition apparatus according to claim 1, It is characterized in that The transparent top plate has a horizontal bottom surface.

4. The chemical vapor deposition apparatus according to claim 3, It is characterized in that The bottom surface of the metal top plate is located between adjacent first grooves. When the first process is performed, a gap is provided between the bottom surface of the metal top plate and the top surface of the transparent top plate. When the second process is performed, the bottom surface of the metal top plate and the top surface of the transparent top plate can match and fit each other.

5. The chemical vapor deposition apparatus according to claim 4, It is characterized in that The first process is an in-situ cleaning process of the reaction chamber.

6. The chemical vapor deposition apparatus according to claim 4, It is characterized in that The second process is a reaction chamber pre-coating process or a deposition process.

7. The chemical vapor deposition apparatus according to claim 5, It is characterized in that When performing the first process, the first process temperature in the reaction chamber is 800-1100°C.

8. The chemical vapor deposition apparatus according to claim 6, It is characterized in that When the second process is performed, the second process temperature in the reaction chamber is 400-700°C.

9. The chemical vapor deposition apparatus according to claim 1, It is characterized in that The bottom wall comprises a transparent bottom plate and a metal bottom plate supporting the transparent bottom plate, a plurality of second grooves are arranged on the metal bottom plate for accommodating a plurality of radiation heat sources, a second elastic sealing device is arranged between the metal bottom plate and the transparent bottom plate, a second heat-conducting gas inlet channel is also arranged on the metal bottom plate, a second valve is arranged on the second heat-conducting gas inlet channel, a second heat-conducting gas exhaust channel is also arranged on the metal bottom plate, the second heat-conducting gas exhaust channel is connected to a vacuum pump, a second flow regulating device is arranged on the second heat-conducting gas inlet channel or the second heat-conducting gas exhaust channel, and the second flow regulating device is used to control the gas pressure of the heat-conducting gas delivered to the plurality of second grooves; The chemical vapor deposition device further includes a controller for sending instructions to the second flow regulating device so that the second flow regulating device controls the heat-conducting gas in the second groove to have different gas pressures during the first process and the second process.

10. The chemical vapor deposition apparatus according to claim 1 or 9, It is characterized in that The first elastic sealing device and the second elastic sealing device are O-rings.

11. The chemical vapor deposition apparatus according to claim 1, It is characterized in that The material of the metal top plate is aluminum or aluminum alloy, and the material of the transparent top plate is quartz.

12. The chemical vapor deposition apparatus according to claim 9, It is characterized in that The material of the metal bottom plate is aluminum or aluminum alloy, and the material of the transparent bottom plate is quartz.

13. The chemical vapor deposition apparatus according to claim 11, It is characterized in that The surface of the first groove is coated with a gold coating.

14. The chemical vapor deposition apparatus according to claim 12, It is characterized in that The surface of the second groove is coated with a gold coating.

15. The chemical vapor deposition apparatus according to claim 1, It is characterized in that The bottom wall protrudes downward to form an arch or cone shape, and the material of the bottom wall is quartz.

16. The chemical vapor deposition apparatus according to any one of claims 1, 9 or 15, It is characterized in that A substrate tray is horizontally arranged in the reaction chamber for supporting a substrate. The top wall and the bottom wall are connected via a flange to form the reaction chamber. The flange is provided with the air inlet opening and the exhaust opening.

17. A method for deposition using the chemical vapor deposition apparatus according to any one of claims 1 to 16, It is characterized in that The following steps are included: Using the first flow regulating device to regulate the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a first pressure; performing a reaction chamber in-situ cleaning process in the reaction chamber; Using the first flow regulating device to regulate the pressure of the heat-conducting gas in the first groove so that the heat-conducting gas has a second pressure; performing a reaction chamber pre-coating process in the reaction chamber; transferring the substrate to a substrate tray in the reaction chamber; performing a deposition process in the reaction chamber; The substrate is transferred out of the reaction chamber.

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