Chemical vapor deposition device and horizontal installation method of remote plasma source in chemical vapor deposition device

Abstract

The present invention relates to a chemical vapor deposition apparatus and a horizontal installation method of a remote plasma source in the apparatus, the chemical vapor deposition apparatus comprising: a processing chamber for accommodating a wafer for plasma processing; the electric field chamber is arranged on the processing chamber, and a remote plasma source is arranged in the electric field chamber; and a guide portion provided in the electric field chamber to guide the lowering of the remote plasma source, the guide portion including a plurality of lowering guides provided in a lowering direction of the remote plasma source, and a moving block held horizontal by the lowering guides and guiding the lowering in an inner portion of the electric field chamber.

Description

Technical Field

[0001] The present invention relates to a chemical vapor deposition device and a method for horizontally installing a remote plasma source in the device. More specifically, the present invention relates to the following chemical vapor deposition device and a method for horizontally installing a remote plasma source in the device, that is, the chemical vapor deposition device has a guide portion for guiding the remote plasma source to descend while keeping it horizontal. Therefore, there is no need to perform horizontal adjustment while pressurizing the remote plasma source as in the past, thereby improving work efficiency. In addition, since the horizontality is accurately maintained, the work accuracy can also be improved at the same time. Background Art

[0002] Generally, the Chemical Vapor Deposition (CVD) process is a method of depositing insulating materials, semiconductors, metals, etc. by chemical reactions of gases, and is used when depositing the desired materials on the surface of a wafer. This chemical vapor deposition process can be divided into a thermal chemical vapor deposition (CVD) process and a plasma enhanced chemical vapor deposition (PECVD) process using plasma.

[0003] The thermal chemical vapor deposition (CVD) process is a process for performing predetermined wafer surface treatment by supplying high-temperature reaction gas to the wafer surface, and the plasma chemical vapor deposition (PE CVD) process is a process for exciting and / or dissociating the reaction gas by high-frequency (RF) energy to generate highly reactive plasma, thereby reducing the energy required for the chemical reaction, thereby performing the process at a low temperature.

[0004] Reference Figure 1 and Figure 2 To illustrate this plasma chemical vapor deposition (PECVD) process. First, a wafer W whose surface is to be processed by plasma is arranged inside a processing chamber 11. An electric field chamber 12 is arranged on the processing chamber 11. A cover 15 is arranged on this processing chamber 11 to divide it into upper and lower spaces with the electric field chamber 12. On the other hand, a remote plasma source 13 for generating plasma is arranged in the electric field chamber 12. The remote plasma source 13 includes a remote plasma source body 131 for generating plasma, and an injection pipe 132 protruding from the lower side of the remote plasma source body 131 and entering the processing chamber 11 to supply plasma. The injection pipe 132 is put into the processing chamber 11 through a coupling portion 14 arranged on the cover body 15, and then the remote plasma source body 131 is combined with the coupling portion 14 and fixed.

[0005] At this time, in order to adjust the level of the remote plasma source 13 to combine with the combining portion 14, as shown in FIG. Figure 2 As shown, the remote plasma source 13 is arranged on the elastic mounting portion 16 and adjusted horizontally, and then the remote plasma source 13 is fixed to the coupling portion 14 .

[0006] However, in this prior art, in order to adjust the level of the remote plasma source 13, the remote plasma source 13 needs to be pressurized from the upper side for level adjustment, so there is a problem of reduced work efficiency due to work difficulties and reduced work accuracy.

[0007] On the other hand, the above-mentioned prior art is the technology retained by the inventor to derive the present invention, or the technical information obtained in the process of deriving the present invention, and is not necessarily the known technology disclosed to the general public before the application of the present invention.

[0008] Prior art literature

[0009] Patent Literature

[0010] Patent Document 1: U.S. Patent Publication US2018 / 0148840A1 (published on May 31, 2018)

[0011] Patent Document 2: Korean Patent Publication No. 10-2005-0072291 (published on July 11, 2005)

[0012] Patent Document 3: Korean Patent Publication No. 10-2018-0061061 (published on June 7, 2018) Summary of the invention

[0013] Technical issues

[0014] In order to solve the above-mentioned problems, the present invention aims to provide a chemical vapor deposition device and a horizontal installation method of a remote plasma source in the device. The chemical vapor deposition device has a guide portion for guiding the remote plasma source to descend while keeping it horizontal. Therefore, there is no need to perform horizontal adjustments while pressurizing the remote plasma source as in the past, thereby improving work efficiency. In addition, since the horizontality is accurately maintained, the working accuracy can also be improved at the same time.

[0015] The problems to be solved by the present invention are not limited to the problems mentioned above, and ordinary technicians in the technical field to which the present invention belongs can clearly understand other technical problems to be solved that are not mentioned through the following description.

[0016] Solutions to the problem

[0017] According to an embodiment of the present invention, a chemical vapor deposition device includes: a processing chamber for accommodating wafers for plasma processing; an electric field chamber, which is arranged on the processing chamber and has a remote plasma source inside; and a guide part, which is arranged in the electric field chamber and guides the descent of the remote plasma source. Inside the electric field chamber, the guide part includes a plurality of descent guides arranged in the descent direction of the remote plasma source, and a moving block which is kept horizontal by the descent guides and guides the descent.

[0018] In this case, the moving block may include: a moving block body in the shape of a plate, the remote plasma source being fixed on the lower side thereof; a bending portion bent at both side ends of the moving block body; and a coupling wheel arranged on the side of the descending guide member in the bending portion and coupled to the descending guide member.

[0019] At this time, the present invention is characterized in that the coupling wheels may be provided in pairs, and the descending guide may be inserted therebetween to guide the descent of the moving block through the rolling motion of the coupling wheels.

[0020] In addition, the present invention is characterized in that the chemical vapor deposition device according to an embodiment of the present invention may also include: a through hole, which is arranged on one side of the curved portion; a through hole, which is arranged on the descending guide; and an insertion pin, which is inserted into the through hole of the curved portion and the through hole of the descending guide, and when the remote plasma source is arranged at a predetermined position on the processing chamber in a horizontal state, the through hole of the curved portion and the through hole of the descending guide face each other.

[0021] On the other hand, the moving block body may further include a fixing hole, and the fixing hole may be configured in such a manner that a fixing member is inserted into the fixing hole to fix the remote plasma source.

[0022] In addition, the chemical vapor deposition device may further include an elastic mounting portion in the processing chamber, and the remote plasma source is arranged on the upper portion of the elastic mounting portion.

[0023] In addition, the present invention is characterized in that the remote plasma source can be kept horizontal and lowered in a state of being fixed to the moving block to be installed on the processing chamber.

[0024] The horizontal installation method of the remote plasma source according to an embodiment of the present invention is a horizontal installation method of the remote plasma source in a chemical vapor deposition device, the chemical vapor deposition device comprising: a processing chamber, accommodating a wafer for plasma processing; an electric field chamber, arranged on the processing chamber, having the remote plasma source inside; and a guide portion, arranged in the electric field chamber, guiding the descent of the remote plasma source, wherein the guide portion comprises a plurality of descent guides arranged in the descent direction of the remote plasma source, and a moving block which is kept horizontal and guided to descend by the descent guides inside the electric field chamber, wherein the method comprises: a step of arranging the plurality of descent guides on one side inside the electric field chamber along the descent direction of the remote plasma source; a step of arranging the moving block on the descent guide; a step of descending the moving block and combining it with the remote plasma source arranged on the processing chamber to adjust the level of the remote plasma source; a step of inserting an insertion pin into the through hole of the descent guide and the through hole of the moving block to fix the horizontal state of the remote plasma source; and a step of arranging the remote plasma source on the processing chamber.

[0025] In this case, the present invention is characterized in that the remote plasma source is arranged on an elastic mounting portion provided on the processing chamber.

[0026] Furthermore, the present invention is characterized in that, in the step of providing the moving blocks, the moving blocks provided in pairs may be provided on the front side and the rear side of the descending guide, respectively.

[0027] On the other hand, the present invention is characterized in that the moving block may include: a moving block main body, which is in the shape of a plate, and the remote plasma source is fixed on its lower side; a curved portion, which is curved at both side ends of the moving block main body; and a coupling wheel, which is arranged on the side of the descending guide member in the curved portion and is coupled to the descending guide member, and the descent of the moving block is guided by the rolling movement of the coupling wheels which are arranged in pairs and have the descending guide member inserted therebetween.

[0028] In addition, the present invention is characterized in that the through hole of the moving block can be arranged on one side of the curved portion, and when the remote plasma source is arranged in a horizontal state at a predetermined position on the processing chamber, the through hole of the descending guide and the through hole of the curved portion of the moving block can face each other.

[0029] According to the horizontal installation method of the remote plasma source of an embodiment of the present invention, before combining the moving block and the remote plasma source, it may also include: a step of removing the lifting bolts provided on the remote plasma source; and a step of inserting a fixing member through a fixing hole formed in the moving block body to fix the remote plasma source.

[0030] According to the horizontal installation method of the remote plasma source of an embodiment of the present invention, after the deposition process is completed, it can also include: a step of removing the insertion pin from the through hole of the descending guide and the through hole of the moving block; a step of separating the moving block and the remote plasma source from each other; and a step of separating the descending guide from the inner side of the electric field chamber.

[0031] Effects of the Invention

[0032] As described above, according to the embodiment of the present invention, there is no need to perform leveling while pressurizing the remote plasma source, thereby improving work efficiency, and also, since the leveling is accurately maintained, simultaneously improving work accuracy.

[0033] The effects of the present invention are not limited to the effects mentioned above, and a person skilled in the art can clearly understand other effects not mentioned through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 The schematic diagram briefly shows the installation relationship between a chamber and a remote plasma source for conventional chemical vapor deposition.

[0035] Figure 2 A schematic diagram of a chamber for conventional chemical vapor deposition is briefly shown with a remote plasma source mounted on an elastic mounting.

[0036] Figure 3 The figure is a schematic diagram briefly showing the installation relationship between the guide part and the remote plasma source according to one embodiment of the present invention.

[0037] Figure 4 FIG. 1 is a schematic diagram simply showing a guide portion according to an embodiment of the present invention.

[0038] Figure 5 The figure is a schematic diagram briefly showing the installation of a moving block on a descending guide according to an embodiment of the present invention.

[0039] Figure 6 The schematic diagram briefly shows a moving block according to one embodiment of the present invention being lowered and combined with a remote plasma source.

[0040] Figure 7A schematic diagram is briefly shown with the eyebolts of a remote plasma source according to one embodiment of the present invention removed.

[0041] Figure 8 The figure is a schematic diagram briefly showing the installation of the coupling pins on the descending guide and the moving block according to one embodiment of the present invention.

[0042] (Explanation of Reference Numerals)

[0043] 110: descending guide 111: through hole

[0044] 120: Move block 1210: Move block body

[0045] 1220: bending part 1230: coupling wheel

[0046] 130: Insert pin DETAILED DESCRIPTION

[0047] In the present invention, the drawings are exaggerated for the sake of distinction, clarity and ease of understanding of the prior art. In addition, the terms described below are defined in consideration of the functions in the present invention, and may vary according to the intentions or conventions of the users and operators. Therefore, these terms should be defined by the technical content of the full text of this specification. In addition, the embodiments are only illustrative matters of the structural elements disclosed in the claims of the present invention, and do not limit the scope of rights of the present invention, which should be interpreted according to the technical ideas of the full text of the specification of the present invention.

[0048] Throughout the specification, when it is mentioned that a structure “includes” another structure, unless there is a special description to the contrary, it means that other structures may also be included, rather than excluding other structures.

[0049] In addition, when it is mentioned that a structure is “connected”, “coupled” or “combined” to another structure, it refers not only to the case of “direct connection”, “direct coupling” or “direct coupling”, but also to the case of “connection with another structure in between”, “coupled with another structure in between” or “combined with another structure in between”. On the contrary, when it is mentioned that a structure is “directly connected”, “directly coupled” or “directly coupled” to another structure, it should be understood that there is no other structure in between.

[0050] In addition, when directional terms such as "front", "rear", "up", "down", "left", "right", "one end", "the other end", "both ends" are used, these are terms used illustratively for the orientation of the disclosed drawings and, therefore, should not be interpreted restrictively. When terms such as "first" and "second" are used, these are terms used to distinguish between structures and should not be interpreted restrictively.

[0051] In order to more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters known to those skilled in the art of the following embodiments will be omitted. Also, in the drawings, detailed descriptions of parts not related to the description of the embodiments will be omitted.

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0053] Figure 3 A schematic diagram briefly illustrating the installation relationship between the guide portion and the remote plasma source according to an embodiment of the present invention is shown in FIG. Figure 4 To simply illustrate a schematic diagram of a guide portion according to an embodiment of the present invention, Figure 5 To briefly illustrate a schematic diagram of installing a moving block on a descending guide according to an embodiment of the present invention, Figure 6 To briefly illustrate a schematic diagram of a moving block according to an embodiment of the present invention being lowered and combined with a remote plasma source, Figure 7 To briefly illustrate a schematic diagram of removing the eyebolt of a remote plasma source according to one embodiment of the present invention, Figure 8 The figure is a schematic diagram briefly showing the installation of the coupling pins on the descending guide and the moving block according to one embodiment of the present invention.

[0054] Reference Figures 3 to 8 The chemical vapor deposition apparatus according to an embodiment of the present invention includes a processing chamber 11 , an electric field chamber 12 and a guide portion 100 .

[0055] The processing chamber 11 is a space for performing various semiconductor processes such as deposition processes, and can accommodate wafers for plasma processing.

[0056] The electric field chamber 12 may be disposed on the processing chamber 11, and may have a remote plasma source 13 therein. Plasma supplied by the remote plasma source 13 may be used to perform a deposition process on the wafer disposed inside the processing chamber 11. The chemical vapor deposition apparatus may further include an elastic mounting portion 16 disposed in the processing chamber 11, and the remote plasma source 13 may be disposed on the elastic mounting portion 16.

[0057] At this time, it is important to set the remote plasma source 13 in a horizontally adjusted state. To this end, the chemical vapor deposition apparatus of this embodiment includes a guide 100 for guiding the descent of the remote plasma source.

[0058] That is, in order to adjust the elastic mounting portion 16 (see Figure 2 ) in order to adjust the level of the remote plasma source 13, it is necessary to pressurize the remote plasma source 13 on the upper side and adjust the level at the same time, which causes problems such as difficulty in working, reduced working efficiency and reduced working accuracy.

[0059] In order to solve the above-mentioned problem, the present invention proposes that by further comprising a guide portion 100 for guiding the level of the remote plasma source 13 to drop, the level of the remote plasma source 13 can be maintained more conveniently and accurately.

[0060] On the other hand, the processing chamber 11, the electric field chamber 12 and the remote plasma source 13 are the same as those described above, and thus repeated descriptions thereof are omitted.

[0061] The guide portion 100 is disposed in the electric field chamber to guide the descent of the remote plasma source 13 , and includes a plurality of descent guides 110 and a moving block 120 .

[0062] The plurality of descending guides 110 may be disposed inside the electric field chamber 12 along a descending direction (ie, a vertical direction in the figure) of the remote plasma source 13 .

[0063] The moving block 120 may be maintained horizontally and guided to descend by the descending guide 110 .

[0064] At this time, the remote plasma source 13 may be kept horizontal while being fixed to the moving block 120 and may be lowered to be installed on the processing chamber 11 .

[0065] The moving block 120 includes a moving block body 1210 , a bending portion 1220 , and a coupling wheel 1230 .

[0066] The moving block body 1210 is in the shape of a plate, and the remote plasma source 13 can be fixed on the lower side thereof.

[0067] The moving block body 1210 may further include a fixing hole 1211. A fixing member F may be inserted into the fixing hole 1211, so that the remote plasma source 13 may be fixed.

[0068] The bending portion 1220 is bent at both side ends of the moving block body 1210 , and may also be bent in a vertical direction as shown in the figure.

[0069] The coupling wheel 1230 is disposed on a side of the curved portion 1220 facing the descending guide member 110 , and can be coupled to the descending guide member 110 .

[0070] At this time, as shown in the figure, the descending guides 110 are provided with two at the front and two at the rear, and the moving blocks 120 can be provided in pairs and can be respectively provided at the front side and the rear side of the descending guide 110. Thus, the remote plasma source 13 can be fixed to the pair of moving blocks 120, so as to maintain horizontality and descend stably.

[0071] like Figure 3 As shown, the coupling wheels 1230 may be arranged at predetermined intervals in the vertical direction and the width direction in the curved portion 1220. The coupling wheels 1230 contact the descending guide 110 and perform rolling motion, thereby guiding the moving block 120 to descend stably. At this time, the coupling wheels 1230 need to be rotatably arranged in the curved portion 1220, which is a well-known structure in the technical field, so detailed description and illustration are omitted.

[0072] As described above, the coupling wheels 1230 may be disposed in pairs in the upper and lower directions, respectively, with the descending guide 110 interposed therebetween, so that the moving block 120 may be guided to descend by the rolling motion of the coupling wheels 1230 .

[0073] At this time, the chemical vapor deposition apparatus according to the embodiment of the present invention may further include a through hole 1221 provided at one side of the bent portion 1220 , a through hole 111 provided at the descending guide 110 , and an insertion pin 130 .

[0074] When the remote plasma source 13 is disposed in a horizontal state at a predetermined position on the processing chamber 11 , the through hole 1221 and the through hole 111 may face each other.

[0075] The insertion pin 130 may be inserted into the through hole 1221 and the through hole 111 .

[0076] In this embodiment, the insertion pin 130 is inserted into the through hole 1221 and the through hole 111, so that it can be confirmed that the remote plasma source 130 is set at a predetermined position in a horizontal state. Therefore, the level of the remote plasma source 130 can be easily confirmed, thereby further improving work efficiency.

[0077] Below, refer to Figures 3 to 8 , describing the horizontal installation method of the remote plasma source in the chemical vapor deposition device.

[0078] The method for horizontally installing a remote plasma source according to an embodiment of the present invention is a method for horizontally installing the remote plasma source 13 in a chemical vapor deposition device, the chemical vapor deposition device comprising: a processing chamber 11, accommodating a wafer for plasma processing; an electric field chamber 12, disposed on the processing chamber 11, having the remote plasma source 13 inside; and a guide 100, disposed in the electric field chamber 12, guiding the descent of the remote plasma source 13, wherein the guide comprises a plurality of descent guides 110 disposed on the remote plasma source 13 in the descent direction, and a moving block 120 that is kept horizontal and guided to descend by the descent guides 110. For the repeated contents in the description of the chemical vapor deposition device according to the embodiment of the present invention, the detailed description thereof is omitted in this embodiment.

[0079] According to an embodiment of the present invention, the horizontal installation method of the remote plasma source includes: a step of setting the multiple descending guides 110; a step of setting the moving block 120; a step of adjusting the level of the remote plasma source 13; a step of fixing the horizontal state of the remote plasma source 13; and a step of setting the remote plasma source 13 on the processing chamber 11.

[0080] Reference Figure 3 and Figure 4 In the step of setting the plurality of descending guides 110, the plurality of descending guides 110 may be set at one side of the interior of the electric field chamber 12 along the descending direction (vertical direction) of the remote plasma source 13. At this time, the descending guide 110 may be detachably set at one side of the interior of the electric field chamber 12 using a known structure such as a bolt.

[0081] In the step of installing the moving block 120, after installing the descending guide 110, the moving block 120 may be installed in the descending guide 110. At this time, as described above, the moving blocks 120 may be installed in pairs and may be installed at the front side and the rear side of the descending guide 110, respectively.

[0082] Reference Figure 5 and Figure 6 In the step of adjusting the level of the remote plasma source 13, the moving block 120 may be lowered to be combined with the remote plasma source 13 disposed on the processing chamber 11, and the level of the remote plasma source 13 may be adjusted.

[0083] The moving block 120 includes: a moving block body 1210 in a plate shape, the remote plasma source being fixed at the lower side thereof; a curved portion 1220 curved at both side ends of the moving block body 1210; and a coupling wheel 1230 disposed on the side of the curved portion 1220 in the direction of the descending guide 110 and coupled to the descending guide 110. Therefore, the coupling wheels 1230 may be disposed in pairs, and the descending guide 110 may be inserted therebetween, and the descending of the moving block 120 may be guided by the rolling motion of the coupling wheels 1230.

[0084] At this time, the remote plasma source 13 has been installed on the processing chamber 11, for example, it can be installed on the elastic mounting portion 16 described above (refer to Figure 2 )superior.

[0085] When the remote plasma source 13 in the above-described state is fixed to the moving block 120, the level of the remote plasma source 13 is adjusted. That is, since the moving block 120 is lowered in a state of being level-adjusted by the lowering guide 110, if the remote plasma source 13 is coupled to the moving block 120, the level of the remote plasma source 13 can also be adjusted.

[0086] On the other hand, the method for horizontally installing the remote plasma source in the chemical vapor deposition apparatus of the present embodiment may further include, before combining the moving block 120 and the remote plasma source 13, removing the eyebolt 131a (refer to Figure 7 and inserting a fixing member F through a fixing hole 1211 formed in the moving block body 1210 to fix the remote plasma source 13.

[0087] The fixing member F may be a well-known bolt or screw, etc. Since such a fixing member F is a well-known structure in the relevant technical field, detailed description and illustration are omitted.

[0088] Reference Figure 8 In the step of fixing the horizontal state of the remote plasma source 13, the insertion pin 130 can be inserted into the through hole 111 of the descending guide 110 and the through hole 1221 of the moving block 120, so that the level of the remote plasma source 13 can be fixed.

[0089] As described above, when the remote plasma source 13 is horizontally disposed at a predetermined position on the processing chamber 11 , the through holes 111 , 1221 may face each other.

[0090] Therefore, when the insertion pin 130 is inserted into the through hole 111 of the descending guide 110 and the through hole 1221 of the moving block 120 , the fact that the level is accurate is confirmed and the current level state is fixed, thereby improving the working accuracy.

[0091] On the other hand, in the step of placing the remote plasma source 13 on the processing chamber, after confirming the level of the remote plasma source 13, the remote plasma source 13 can be combined with the above-mentioned combining portion 14 (refer to Figure 1 ) in order to fix each other.

[0092] When the remote plasma source is set up and wafer deposition is completed by the method of the present invention described above, the guide portion 100 needs to be dismantled to remove the remote plasma source.

[0093] In this case, the horizontal installation method of the remote plasma source in the chemical vapor deposition device according to an embodiment of the present invention may also include: a step of removing the insertion pin 130 from the through hole 111 of the descending guide 110 and the through hole 1221 of the moving block 120; a step of separating the moving block 120 and the remote plasma source 13 from each other; and a step of separating the descending guide 110 from the inside of the electric field chamber 12.

[0094] As described above, the embodiments of the present invention provide a possibility of improving work efficiency while also improving work accuracy by accurately maintaining the level.

[0095] As described above, the present invention is described with reference to the embodiments shown in the accompanying drawings, but this is only for illustration, and it should be understood that various modifications and other equivalent embodiments can be made according to the common knowledge in the technical field. Therefore, the true technical protection scope of the present invention should be based on the attached claims and defined according to the specific content of the above invention.

[0096] Industrial Availability

[0097] The invention is to adjust the level of a remote plasma source and can be used in industrial fields related to chemical vapor deposition devices.

Claims

1. A chemical vapor deposition apparatus, wherein: include: a processing chamber that houses the wafer for plasma processing; An electric field chamber, disposed on the processing chamber, having a remote plasma source therein; as well as The guide part is arranged in the electric field chamber to guide the descent of the remote plasma source. Inside the electric field chamber, the guide part includes a plurality of descent guides arranged in the descent direction of the remote plasma source, and a moving block which is kept horizontal and guided to descend by the descent guides.

2. The chemical vapor deposition device according to claim 1, characterized in that: The moving block includes: The mobile block body is in the shape of a plate, and the remote plasma source is fixed on the lower side thereof; a bent portion, bent at both side ends of the moving block body; and A combining wheel is arranged on a side surface of the curved portion in a direction of the descending guide and combined with the descending guide.

3. The chemical vapor deposition device according to claim 2, characterized in that: The coupling wheels are arranged in pairs, and the descending guide is interposed therebetween to guide the descent of the moving block through the rolling motion of the coupling wheels.

4. The chemical vapor deposition device according to claim 2, characterized in that: The device also includes: A through hole is provided on one side of the bending portion; a through hole provided in the descending guide; and an insertion pin inserted into the through hole of the curved portion and the through hole of the descending guide, When the remote plasma source is disposed in a horizontal state at a predetermined position on the processing chamber, the through hole of the bent portion and the through hole of the descending guide face each other.

5. The chemical vapor deposition device according to claim 2, characterized in that: The moving block body further includes a fixing hole configured in such a manner that the remote plasma source is fixed by inserting a fixing member.

6. The chemical vapor deposition device according to claim 1, characterized in that: The device further comprises an elastic mounting portion in the processing chamber, and the remote plasma source is arranged on an upper portion of the elastic mounting portion.

7. The chemical vapor deposition device according to claim 1, characterized in that: The remote plasma source is kept horizontally while being fixed to the moving block and is lowered to be mounted on the processing chamber.

8. A method for horizontally installing a remote plasma source in a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising: a processing chamber that houses the wafer for plasma processing; an electric field chamber, disposed on the processing chamber, and having the remote plasma source therein; and a guide portion, disposed in the electric field chamber, for guiding the descent of the remote plasma source, wherein the guide portion comprises, in the electric field chamber, a plurality of descent guides disposed in the descent direction of the remote plasma source, and a moving block maintained horizontally and guided to descend by the descent guides, wherein the method comprises: The step of arranging the plurality of descending guides on one side of the interior of the electric field chamber along the descending direction of the remote plasma source; The step of providing the moving block on the descending guide; The step of lowering the moving block and combining with the remote plasma source disposed on the processing chamber to adjust the level of the remote plasma source; inserting an insertion pin into the through hole of the descending guide and the through hole of the moving block to fix the horizontal state of the remote plasma source; and The step of disposing the remote plasma source on the processing chamber.

9. The horizontal installation method of the remote plasma source according to claim 8, characterized in that: The remote plasma source is disposed on a resilient mounting portion disposed on the processing chamber.

10. The horizontal installation method of the remote plasma source according to claim 8, characterized in that: In the step of providing the moving blocks, the moving blocks provided in pair are provided on the front side and the rear side of the descending guide, respectively.

11. The horizontal installation method of the remote plasma source according to claim 8, characterized in that: The moving block includes: The mobile block body is in the shape of a plate, and the remote plasma source is fixed on the lower side thereof; a bent portion, bent at both side ends of the moving block body; and A coupling wheel is arranged on the side of the descending guide member in the curved portion and coupled to the descending guide member. The coupling wheels are arranged in pairs, and the descending guide is interposed therebetween to guide the descent of the moving block through the rolling motion of the coupling wheels.

12. The horizontal installation method of the remote plasma source according to claim 11, characterized in that: The through hole of the moving block is formed on one side of the bending portion, When the remote plasma source is disposed at a predetermined position on the processing chamber in a horizontal state, the through hole of the descending guide and the through hole of the bent portion of the moving block face each other.

13. The horizontal installation method of the remote plasma source according to claim 11, characterized in that: Prior to combining the moving block and the remote plasma source, the method further comprises: removing an eyebolt disposed on the remote plasma source; and A step of inserting a fixing member through a fixing hole formed in the moving block body to fix the remote plasma source.

14. The horizontal installation method of the remote plasma source according to claim 8, characterized in that: After the deposition process is completed, the method further includes: a step of removing the insertion pin from the through hole of the descending guide and the through hole of the moving block; The step of separating the moving block and the remote plasma source from each other; and The step of separating the descending guide from the inside of the electric field chamber.

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