MOS structure phase modulation arm and optical device

Abstract

The invention provides an MOS structure phase modulation arm and an optical device, and relates to the technical field of semiconductor photoelectronics. The MOS structure phase modulation arm provided by the embodiment of the invention comprises an MOS capacitor structure, the MOS capacitor structure comprises a first semiconductor layer, a second semiconductor layer and an oxide layer, and the oxide layer is located between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer and the second semiconductor layer have different polarities; the material of the first semiconductor layer comprises a group III-V compound, and the material of the second semiconductor layer comprises silicon. The embodiment of the invention provides an MOS (Metal Oxide Semiconductor) structure phase modulation arm and an optical device, which are used for realizing monolithic integration and have high modulation efficiency and low loss.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic technology, and in particular to a MOS structure phase modulation arm and an optical device. Background Art

[0002] 5G communication, Internet of Everything, Virtual Reality (VR), cloud services... The rapid development of communication technology has brought the world into the information age. With the development of communication technology, the reality of huge amounts of information data and longer information transmission distances has prompted the phase-modulation arms that constitute the optical communication network to develop in the direction of integration, miniaturization, and low loss. In recent years, with the rapid development of integrated optics and micro-nano processing technology, on-chip integration is expected to solve these problems of the phase-modulation arm. In addition, the on-chip integration method shows great advantages in stability, power consumption, and mass manufacturing.

[0003] So far, the phase-modulation arms prepared by on-chip integration technology mainly include two types: silicon-based substrates and InP-based substrates. Their main structures and performances are as follows.

[0004] (1) Silicon-based phase-modulation arm: The silicon-based phase-modulation arm is a silicon-based optoelectronic device designed and fabricated on a silicon wafer or SOI wafer as a substrate through a series of waveguide material selection, waveguide structure design, and micro-nano processing technology. After years of development, the silicon-based phase-modulation arm has developed many structures, such as MOS capacitor structure (A. Liu et al. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor, Nature, vol. 427, no. 6975, pp. 615-618 (2004)), pn junction carrier depletion structure (Liu, A. et al. High-speed optical modulation based on carrier depletion in a silicon waveguide. Opt. Express 15, 660–668 (2007)), etc. Among them, the preparation process of the above-mentioned silicon-based phase-modulation arm structure is compatible with the CMOS process, and has the advantages of mature process and low cost in production and preparation. However, due to the nature of silicon materials, only plasma effect and thermo-optical effect can play the role of electrical modulation or thermal modulation, so the modulation efficiency of the phase-modulation arm prepared by using silicon materials alone is relatively low. With the deepening of research, a series of phase-modulation arms mixed with silicon and other materials have been developed, such as the hybrid waveguide structure of silicon and lithium niobate thin film (Liu Ye, Research on high-speed thin-film lithium niobate Mach-Zehnder modulator, Ph.D., (2021)), silicon and III-V semiconductor MOS capacitor structure (T.Hiraki et al. Heterogeneously integrated III-V / Si MOS capacitor Mach-Zehnder modulator, Nature Photonics, vol.11, no.8, pp.482-485 (2017)), etc. These structures are based on silicon substrates and have the advantages of large electro-optical effects of lithium niobate and III-V compounds. The prepared phase-modulation arms have high modulation efficiency and low loss. However, the preparation of these materials with large electro-optical effects on silicon substrates requires wafer bonding, heterogeneous growth or high-quality deposition, and the process preparation is relatively difficult. In addition, as an indirect bandgap material, silicon cannot be used to prepare light-emitting devices such as lasers and LEDs, so silicon-based phase-modulation arms are mainly integrated with light sources through hybrid integration or heterogeneous integration. How to successfully integrate lasers with silicon optical devices for high quality is a problem.

[0005] (2) Indium phosphide (InP)-based phase-modulation arm: InP-based phase-modulation arm is a device prepared on an InP substrate. For InP materials, it can not only modulate light through its own plasma effect and Pockels effect, but also grow lattice-matched III-V group ternary and quaternary compound semiconductor materials on InP, which can further enhance the modulation capability of the entire device structure through the Franz-Keldysh effect (FK effect) or quantum Stark effect (Starke effect). Based on the above advantages, InP-based phase-modulation arm has currently developed structures such as PIN, NIPN, NIN, etc. combined with quantum wells (Multiple Quantum Well, MQW) (JA Hillier et al. A 100GBaud co-planar stripline Mach-Zehnder modulator on IndiumPhosphide platform, 2023 Opto-Electronics and Communications Conference (OECC), (2023)). In addition, InP-based III-V materials can also be used to prepare optoelectronic devices such as lasers and optical amplifiers, which makes the phase-modulation arm based on InP substrate have the advantage of monolithic integration with these structures. However, the use of the MQW layer in the above structure, while utilizing the quantum Stark effect or FK effect of III-V compounds to improve the modulation efficiency, also introduces large losses. Summary of the invention

[0006] The embodiment of the present invention provides a MOS structure phase modulation arm and an optical device to achieve monolithic integration, high modulation efficiency and low loss.

[0007] In a first aspect, an embodiment of the present invention provides a MOS structure phase modulation arm, comprising a MOS capacitor structure, wherein the MOS capacitor structure comprises a first semiconductor layer, a second semiconductor layer and an oxide layer, wherein the oxide layer is located between the first semiconductor layer and the second semiconductor layer;

[0008] The first semiconductor layer and the second semiconductor layer have different polarities;

[0009] The material of the first semiconductor layer includes a III-V group compound, and the material of the second semiconductor layer includes silicon.

[0010] Optionally, a substrate is further included, and the first semiconductor layer is located between the oxide layer and the substrate in a direction perpendicular to the substrate.

[0011] Optionally, it further comprises a dielectric material layer, wherein the dielectric material layer is located at the periphery of the first semiconductor layer;

[0012] The dielectric material layer is located between the oxide layer and the substrate in a direction perpendicular to the substrate.

[0013] Optionally, the oxide layer is arranged in contact with the substrate.

[0014] Optionally, further comprising a substrate;

[0015] The oxide layer is disposed in contact with the substrate, the first semiconductor layer is disposed in contact with the substrate, and the second semiconductor layer is disposed in contact with the substrate.

[0016] Optionally, the first semiconductor layer includes a quantum well layer, and the quantum well layer includes a plurality of alternately arranged sub-layers.

[0017] Optionally, it further includes a substrate, and the MOS capacitor structure is located on the substrate;

[0018] The substrate includes the III-V group compound.

[0019] Optionally, the substrate and the first semiconductor layer are made of the same material.

[0020] Optionally, the III-V group compound in the first semiconductor layer includes a binary, ternary or quaternary III-V group material;

[0021] Among them, binary III-V group materials include two elements, ternary III-V group materials include three elements, and quaternary III-V group materials include four elements.

[0022] In a second aspect, an embodiment of the present invention provides an optical device, comprising the MOS structure phase modulation arm described in the first aspect.

[0023] In the MOS structure phase modulation arm provided by the embodiment of the present invention, the material of the first semiconductor layer includes a III-V compound, and the material of the second semiconductor layer includes silicon. Not only can the plasma effect, FK effect or quantum Stark effect of the III-V compound be used to increase the modulation efficiency of the device, but the low loss characteristics of silicon can also be introduced to reduce the loss of the MOS structure phase modulation arm. The MOS capacitor structure plays a role in the MOS structure phase modulation arm in limiting the light mode with a high refractive index and supplementing the weak plasma effect of InP. In addition, the MOS structure phase modulation arm provided by the embodiment of the present invention does not use intrinsic semiconductors, and can further improve the modulation efficiency compared to PIN and NIPN using intrinsic semiconductors. Overall, the present invention has the potential for monolithic integration, high modulation efficiency and low loss, and lays a solid foundation for the preparation of small-volume, low-loss, high-performance monolithic integrated III-V semiconductor optical communication chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A cross-sectional view of a phase modulation arm of a MOS structure in the related art;

[0025] Figure 2 A three-dimensional diagram of a MOS structure phase modulation arm provided by an embodiment of the present invention;

[0026] Figure 3 for Figure 2 A cross-sectional view of a phase modulation arm of a MOS structure shown in FIG.

[0027] Figure 4 A three-dimensional diagram of another MOS structure phase modulation arm provided by an embodiment of the present invention;

[0028] Figure 5 for Figure 4 A cross-sectional view of a phase modulation arm of a MOS structure shown in FIG.

[0029] Figure 6 A three-dimensional diagram of another MOS structure phase modulation arm provided by an embodiment of the present invention;

[0030] Figure 7 for Figure 6 A cross-sectional view of a phase modulation arm of a MOS structure shown in FIG.

[0031] Figure 8 A cross-sectional view of another MOS structure phase modulation arm provided by an embodiment of the present invention;

[0032] Fig. 9 A top view of a Mach-Zehnder modulator provided by an embodiment of the present invention;

[0033] Fig.10 A top view of a microring resonator provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0034] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0035] Phase modulation arm: The phase modulation arm is an optoelectronic device that uses the principle that the refractive index of the medium changes with the external field (heat, electricity, sound) to achieve optical phase modulation. The phase modulation arm based on the electro-optical effect has advantages such as high-speed modulation, low insertion loss and stability, making it widely used in optical communications, optical computing, optical processing and other fields.

[0036] Phase Modulation: Phase Modulation is a modulation mode that encodes information as the instantaneous phase change of the carrier.

[0037] The study found that the two phase-modulation arms have certain similarities in device structure, and also have their own unique features. Among them, the silicon-based phase-modulation arm has the advantages of mature preparation technology, diverse structure, low loss and can be prepared by hybrid integration with a variety of materials. However, the problem that silicon-based optoelectronic devices and lasers cannot be monolithically integrated makes it inevitable to solve the problem of hybrid integration or heterogeneous integration during use. The InP-based phase-modulation arm does not have such a problem. It uses the same substrate as the laser and optical amplifier, which gives it the advantage of monolithic integration with other optoelectronic devices. However, the structure of the InP-based phase-modulation arm currently exhibits problems such as low modulation efficiency and high loss, which is not conducive to the miniaturization of the integrated InP-based optical chip and the embodiment of good functions.

[0038] Figure 1 A cross-sectional view of a MOS structure phase modulation arm in the related art, see Figure 1 The MOS structure phase-adjusting arm includes a MOS capacitor structure, and the MOS capacitor structure includes a first semiconductor layer 5, a second semiconductor layer 6 and an oxide layer 7. The oxide layer 7 is located between the first semiconductor layer 5 and the second semiconductor layer 6; the first semiconductor layer 5 and the second semiconductor layer 6 have different polarities. The MOS structure phase-adjusting arm also includes a first electrode 1 and a second electrode 2. The first semiconductor layer 5 is a P-type semiconductor, and is heavily doped at a position where the first semiconductor layer 5 contacts the first electrode 1 to form a P-type semiconductor ohmic contact layer 3. The second semiconductor layer 6 is an N-type semiconductor, and is heavily doped at a position where the second semiconductor layer 6 contacts the second electrode 2 to form an N-type semiconductor ohmic contact layer 4. The materials of the first semiconductor layer 5 and the second semiconductor layer 6 include silicon. The MOS structure phase-adjusting arm in the related art can be a silicon-based substrate phase-adjusting arm, and the silicon-based substrate phase-adjusting arm is difficult to be monolithically integrated.

[0039] Figure 2 A three-dimensional diagram of a MOS structure phase modulation arm provided by an embodiment of the present invention, Figure 3 for Figure 2 The cross-sectional view of the MOS structure phase modulation arm shown in Figure 2 and Figure 3The MOS structure phase modulation arm includes a MOS capacitor structure, which includes a first semiconductor layer 14, a second semiconductor layer 13 and an oxide layer 12. The oxide layer 12 is located between the first semiconductor layer 14 and the second semiconductor layer 13; the oxide layer 12 isolates the conductive channel of the first semiconductor layer 14 and the second semiconductor layer 13. The first semiconductor layer 14 and the second semiconductor layer 13 are arranged opposite to each other, forming two plates of the MOS capacitor structure. The first semiconductor layer 14 and the second semiconductor layer 13 have different polarities. The first semiconductor layer 14 is a P-type semiconductor, and the second semiconductor layer 13 is an N-type semiconductor; or, the first semiconductor layer 14 is an N-type semiconductor, and the second semiconductor layer 13 is a P-type semiconductor. The material of the first semiconductor layer 14 includes a III-V compound, and the material of the second semiconductor layer 13 includes silicon.

[0040] In the MOS structure phase modulation arm provided by the embodiment of the present invention, the material of the first semiconductor layer 14 includes a group III-V compound, and the material of the second semiconductor layer 13 includes silicon. Not only can the plasma effect, FK effect or quantum Stark effect of the group III-V compound be used to increase the modulation efficiency of the device, but the low loss characteristics of silicon can also be introduced to reduce the loss of the MOS structure phase modulation arm. The MOS capacitor structure plays a role in the MOS structure phase modulation arm in that the high refractive index restricts the light mode and supplements the weak InP plasma effect. In addition, the MOS structure phase modulation arm provided by the embodiment of the present invention does not use an intrinsic semiconductor, and can further improve the modulation efficiency compared to PIN and NIPN using intrinsic semiconductors. Overall, the present invention has the potential for monolithic integration, high modulation efficiency and low loss, and lays a solid foundation for the preparation of small-volume, low-loss, high-performance monolithic integrated group III-V semiconductor optical communication chips.

[0041] For example, the MOS structure phase-adjusting arm can be compatible with micro-nano processing technology, and the device can be manufactured through etching, deposition, photolithography and other processes, thereby reducing the difficulty of manufacturing the MOS structure phase-adjusting arm.

[0042] For example, reference Figure 2 and Figure 3 The MOS structure phase modulation arm includes a substrate 10, a first electrode 8, a second electrode 9 and a passivation layer 15. The MOS capacitor structure is located on the substrate 10, that is, the first semiconductor layer 14, the second semiconductor layer 13 and the oxide layer 12 are located on the substrate 10. The first electrode 8 is arranged in contact with the substrate 10. The second electrode 9 is arranged in contact with the second semiconductor layer 13. The first electrode 8 and the second electrode 9 are used to apply an electrical signal. The passivation layer 15 is located on the side of the second semiconductor layer 13 away from the substrate 10, and the passivation layer 15 plays a protective role for the second semiconductor layer 13 and the film layer below the second semiconductor layer 13.

[0043] For example, reference Figure 2 and Figure 3 By designing the phase modulation arm of the MOS structure, such as the width of the waveguide structure, the doping concentration, the thickness of the material layer, and the distance between the electrode and the light mode, the waveguide structure can limit the light mode, and the electrode can achieve no absorption of light. The waveguide structure includes a first semiconductor layer 14 and a second semiconductor layer 13. The width of the waveguide structure refers to the overlapping width of the first semiconductor layer 14 and the second semiconductor layer 13. The doping concentration of the waveguide structure refers to the doping concentration of the first semiconductor layer 14 and the second semiconductor layer 13. The electrode includes a first electrode 8 and a second electrode 9.

[0044] Optionally, refer to Figure 2 and Figure 3 The MOS structure phase modulation arm also includes a substrate 10, and a first semiconductor layer 14 is located between the oxide layer 12 and the substrate 10 in a direction perpendicular to the substrate 10. The oxide layer 12 is located between the second semiconductor layer 13 and the first semiconductor layer 14 in a direction perpendicular to the substrate 10. The MOS capacitor structure provided in the embodiment of the present invention is a vertical MOS capacitor structure. In other implementations, other types of MOS capacitor structures may also be provided.

[0045] Optionally, refer to Figure 2 and Figure 3 The MOS structure phase modulation arm further includes a dielectric material layer 11, which is located on the periphery of the first semiconductor layer 14. The dielectric material layer 11 is located between the oxide layer 12 and the substrate 10 in a direction perpendicular to the substrate 10. The dielectric material layer 11 fills the space around the first semiconductor layer 14, thereby providing support for the semiconductor film on the upper layer thereof. The semiconductor film on the dielectric material layer 11 includes the oxide layer 12 and the second semiconductor layer 13.

[0046] Exemplarily, the surface of the dielectric material layer 11 away from the substrate 10 can be flush with the surface of the first semiconductor layer 14 away from the substrate 10 , so that the setting of the dielectric material layer 11 provides a flat surface for the oxide layer 12 , facilitating the formation and manufacture of the oxide layer 12 .

[0047] For example, reference Figure 2 and Figure 3 When the first semiconductor layer 14 of a part of the area is removed by etching or other processes, a part of the thickness of the substrate 10 is etched away to form a Figure 3 In the structure shown, the substrate 10 is formed to protrude toward the first semiconductor layer 14 at a position below the first semiconductor layer 14 .

[0048] Figure 4 A three-dimensional diagram of another MOS structure phase modulation arm provided by an embodiment of the present invention, Figure 5 for Figure 4The cross-sectional view of the MOS structure phase modulation arm shown in Figure 4 and Figure 5 The oxide layer 12 is disposed in contact with the substrate 10. The oxide layer 12 covers the first semiconductor layer 14 and a portion of the substrate 10, forming a U-shaped MOS capacitor structure.

[0049] Figure 6 A three-dimensional diagram of another MOS structure phase modulation arm provided by an embodiment of the present invention, Figure 7 for Figure 6 The cross-sectional view of the MOS structure phase modulation arm shown in Figure 6 and Figure 7 , the MOS structure phase modulation arm also includes a substrate 10; the oxide layer 12 is arranged in contact with the substrate 10, the first semiconductor layer 14 is arranged in contact with the substrate 10, and the second semiconductor layer 13 is arranged in contact with the substrate 10. The first semiconductor layer 14, the oxide layer 12, and the second semiconductor layer 13 are arranged in a direction parallel to the substrate 10. In other words, the first semiconductor layer 14, the oxide layer 12, and the second semiconductor layer 13 are arranged in a lateral direction. The MOS capacitor structure provided in the embodiment of the present invention is a lateral MOS capacitor structure.

[0050] For example, reference Figure 6 The passivation layer 15 is located on the side of the second semiconductor layer 13 away from the substrate 10, the passivation layer 15 is located on the side of the first semiconductor layer 14 away from the substrate 10, and the passivation layer 15 is located on the side of the oxide layer 12 away from the substrate 10. The passivation layer 15 plays a protective role for the first semiconductor layer 14, the oxide layer 12 and the second semiconductor layer 13.

[0051] For example, reference Figure 2 and Figure 3 , the first semiconductor layer 14 includes a III-V compound of a bulk material.

[0052] Figure 8 A cross-sectional view of another MOS structure phase modulation arm provided in an embodiment of the present invention, referring to Figure 8 The first semiconductor layer 14 includes a quantum well layer 16, and the quantum well layer 16 includes a plurality of alternately arranged sub-layers. The sub-layers in the quantum well layer 16 may be nano-layers, and since the thickness of the nano-layers is extremely small, the nano-layers are two-dimensional materials.

[0053] For example, reference Figure 8 The first semiconductor layer 14 further includes a contact layer 17, and the contact layer 17 is located between the quantum well layer 16 and the oxide layer 12. The contact layer 17 includes a III-V compound. In other embodiments, the contact layer 17 may not be provided in the MOS structure phase modulation arm, and the oxide layer 12 is provided in contact with the quantum well layer 16.

[0054] Optionally, refer to Figure 2-Figure 8The MOS structure phase modulation arm further includes a substrate 10, and the MOS capacitor structure is located on the substrate 10. The substrate 10 includes a III-V group compound. Thus, the MOS structure phase modulation arm can be monolithically integrated with other optoelectronic devices.

[0055] Optionally, refer to Figure 2-Figure 8 , the substrate 10 and the first semiconductor layer 14 are made of the same material. Thus, the substrate 10 and the first semiconductor layer 14 can be formed of the same material, which reduces the difficulty of manufacturing the MOS structure phase modulation arm. In other embodiments, the substrate 10 and the first semiconductor layer 14 can also be made of different materials.

[0056] Optionally, refer to Figure 2-Figure 8 The III-V compound in the first semiconductor layer 14 includes binary, ternary or quaternary III-V materials; wherein the binary III-V material includes two elements, the ternary III-V material includes three elements, and the quaternary III-V material includes four elements.

[0057] Exemplarily, the III-V group compound in the first semiconductor layer 14 includes InGaAsP, InGaAlAs, AlGaAs, GaInP. The substrate 10 includes an InP substrate. InGaAsP, InGaAlAs, AlGaAs, GaInP, etc. can be prepared on an InP substrate.

[0058] Exemplarily, the oxide layer 12 includes oxides such as aluminum oxide, silicon oxide, and hafnium oxide. The silicon material in the second semiconductor layer 13 includes amorphous, polycrystalline, and single crystal silicon. The dielectric material layer 11 mainly includes oxides such as silicon oxide and silicon nitride, and some commonly used polymer dielectric materials, such as BCB, PI, etc.

[0059] The MOS structure phase modulation arm provided in the embodiment of the present invention is a basic optical element and can be used as a separate device or integrated with other devices.

[0060] An embodiment of the invention provides an optical device, the optical device includes the MOS structure phase modulation arm in the above embodiment. Thus, the optical device has the advantages of the MOS structure phase modulation arm, that is, it realizes monolithic integration, has high modulation efficiency and low loss. It should be noted that when the MOS structure phase modulation arm is used as a basic optical element and integrated with an electrical element, the optical device including the MOS structure phase modulation arm is an optoelectronic device.

[0061] When the MOS structure phase modulation arm is used as a separate component or integrated into an optical device (such as an optical chip), it can be applied to quantum state control, optical communication networks, Al chips, neural networks and other fields.

[0062] Exemplarily, the optical device comprises a Mach-Zehnder modulator, Fig. 9 A top view of a Mach-Zehnder modulator provided by an embodiment of the present invention, referring to Fig. 9 The Mach-Zehnder modulator includes a Y waveguide 21 and three modulator electrodes 22. Two of the three modulator electrodes 22 form one of the above-mentioned MOS structure phase modulation arms. The Mach-Zehnder modulator includes two of the above-mentioned MOS structure phase modulation arms. As an example, along Fig. 9 The cross-sectional structure cut out by the dotted arrow shown in FIG. Figure 3 shown.

[0063] Optical devices include microring resonators, Fig.10 A top view of a microring resonator provided by an embodiment of the present invention. Fig.10 , the microring resonator includes a straight waveguide 31 and two resonator electrodes 32. As an example, along Fig.10 The cross-sectional structure cut out by the dotted arrow shown in FIG. Figure 3 shown.

[0064] It should be noted that the Mach-Zehnder modulator and the microring resonator are only examples and are not limitations of the present invention. The MOS structure phase modulation arm provided in the embodiment of the present invention can also be applied to other optical devices besides the Mach-Zehnder modulator and the microring resonator.

[0065] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A MOS structure phase modulation arm, characterized in that: A MOS capacitor structure is included, wherein the MOS capacitor structure includes a first semiconductor layer, a second semiconductor layer and an oxide layer, wherein the oxide layer is located between the first semiconductor layer and the second semiconductor layer; The first semiconductor layer and the second semiconductor layer have different polarities; The material of the first semiconductor layer includes a III-V group compound, and the material of the second semiconductor layer includes silicon.

2. The MOS structure phase modulation arm according to claim 1, characterized in that: The invention also includes a substrate, wherein the first semiconductor layer is located between the oxide layer and the substrate in a direction perpendicular to the substrate.

3. The MOS structure phase modulation arm according to claim 2, characterized in that: Also includes a dielectric material layer, the dielectric material layer is located at the periphery of the first semiconductor layer; The dielectric material layer is located between the oxide layer and the substrate in a direction perpendicular to the substrate.

4. The MOS structure phase modulation arm according to claim 2, characterized in that: The oxide layer is arranged in contact with the substrate.

5. The MOS structure phase modulation arm according to claim 1, characterized in that: Also included is a substrate; The oxide layer is disposed in contact with the substrate, the first semiconductor layer is disposed in contact with the substrate, and the second semiconductor layer is disposed in contact with the substrate.

6. The MOS structure phase modulation arm according to claim 1, characterized in that: The first semiconductor layer includes a quantum well layer, and the quantum well layer includes a plurality of alternately arranged sub-layers.

7. The MOS structure phase modulation arm according to claim 1, characterized in that: Also includes a substrate, the MOS capacitor structure is located on the substrate; The substrate includes the III-V group compound.

8. The MOS structure phase modulation arm according to claim 7, characterized in that: The substrate and the first semiconductor layer are made of the same material.

9. The MOS structure phase modulation arm according to claim 1, characterized in that: The III-V group compound in the first semiconductor layer includes a binary, ternary or quaternary III-V group material; Among them, binary III-V group materials include two elements, ternary III-V group materials include three elements, and quaternary III-V group materials include four elements.

10. An optical device, characterized in that: It comprises the MOS structure phase modulation arm as described in any one of claims 1-9.

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