Semiconductor component and coating forming method thereof

Abstract

The invention discloses a semiconductor component and a coating forming method thereof. The semiconductor component comprises a component body and a coating layer, the first etching-resistant coating is located on the surface of the part body; the second etching-resistant coating is deposited on the surface of the first etching-resistant coating, and the second etching-resistant coating is in chemical bonding connection with the first etching-resistant coating; wherein the second etching-resistant coating is a crystalline yttrium oxyfluoride coating, and the thermal expansion coefficient of the first etching-resistant coating is between the thermal expansion coefficient of the surface of the part body and the thermal expansion coefficient of the crystalline yttrium oxyfluoride coating. Therefore, the binding force between the crystalline-state coating and the substrate is improved, the coating is prevented from cracking and falling off, and the etching resistance of the coating is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a semiconductor component and a coating forming method thereof. Background Art

[0002] In the plasma etching chamber, in order to extend the service life of components and reduce the generation of particle pollutants, a layer of Y is usually prepared on the surface of the components. 2 O 3 (Yttrium oxide) coating, Y 2 O 3 The coating has good etching resistance, but it will still be fluorinated in a fluorine-containing (such as fluorinated hydrocarbon) plasma environment, thereby forming an amorphous fluorinated Y layer on the surface of the coating. 2 O 3 The surface properties of the fluorinated coating change slowly, causing changes in the performance of components inside the cavity, ultimately affecting the etching rate and etching uniformity of the wafer, and even leading to the failure of the etching process.

[0003] YOF (yttrium oxyfluoride) coating can inhibit the fluorination process of the coating in a fluorine-containing plasma environment and maintain the stability of the cavity etching rate. However, the thermal expansion coefficient of the YOF coating is often very different from that of the component substrate, and the coating is prone to cracking and falling off under the action of thermal stress. Especially when the surface of the substrate is smoother, the bonding force between the coating and the substrate is weaker, and the thickness of the coating that produces cracks is also smaller, that is, it is impossible to form a long-term stable and thick YOF coating, and it is difficult to produce a YOF coating with a small surface roughness on a smooth substrate.

[0004] The prior art uses plasma fluorine doping or chemical wet fluorine doping on the basis of yttrium oxide layer coating. Although it can form a YOF coating with relatively high bonding strength, this coating is to insert fluorine atoms into the original yttrium oxide lattice, resulting in the fluorine in the YOF coating being in a free state, without forming a YOF lattice structure, resulting in poor coating stability and high surface roughness; and the thickness of the YOF coating converted from the original yttrium oxide layer coating is relatively thin, and is limited by the thickness of the original yttrium oxide layer coating, and cannot meet some use requirements that require a thick YOF coating. In addition, the prior art also has a process of prefabricating YOF powder / particles for plasma / thermal spraying to form a YOF coating. However, the plasma / thermal sprayed YOF coating has poor molecular fluidity due to the conversion between the solid state and the molten state, resulting in a high porosity of the sprayed coating and excessive surface roughness. After the YOF coating is formed, grinding should be avoided, otherwise there will be risks such as stress cracking, increased porosity and particulate contamination. Therefore, the problem of excessive surface roughness of the generated coating cannot be overcome by secondary processing such as grinding and polishing.

[0005] Therefore, providing a YOF coating that is less likely to fall off and how to form a YOF coating with high density, low surface roughness and not easy to crack and fall off on a substrate surface, especially a smooth substrate surface are problems that need to be solved in the art. Summary of the invention

[0006] The object of the present invention is to provide a semiconductor component and a method for forming a coating thereon, so as to improve the etching resistance of the semiconductor component and maintain the stability of the cavity etching rate.

[0007] In order to achieve the above object, the present invention provides a semiconductor component, comprising:

[0008] Component body;

[0009] A first etching-resistant coating is located on the surface of the component body;

[0010] A second etching-resistant coating is deposited on the surface of the first etching-resistant coating to form a crystalline yttrium oxyfluoride coating;

[0011] The second etch-resistant coating is chemically bonded to the first etch-resistant coating;

[0012] The thermal expansion coefficient of the first etching-resistant coating is between the thermal expansion coefficients of the surface of the component body and the crystalline yttrium oxyfluoride coating.

[0013] Preferably, the surface roughness of the second etching resistant coating is 1 nm-0.3 μm.

[0014] Optionally, the micron-scale porosity of the first etching-resistant coating and the second etching-resistant coating is 0.

[0015] Optionally, the nanoscale porosity of the first and second etching resistant coatings is less than 0.1%.

[0016] Optionally, the thickness of the second etching resistant coating is greater than the thickness of the first etching resistant coating.

[0017] Optionally, the first etching-resistant coating has a thickness of 0.5 μm-10 μm.

[0018] Optionally, the thickness of the second etching resistant coating is not less than 5 μm.

[0019] Optionally, the first etching-resistant coating includes at least one of an yttrium oxide coating and an yttrium fluoride coating.

[0020] Optionally, the first etching resistant coating includes a yttrium oxide coating and a yttrium fluoride coating, and the yttrium oxide coating and the yttrium fluoride coating are alternately stacked.

[0021] Another aspect of the present invention provides a method for forming a coating on the surface of a component body, comprising:

[0022] Providing a component body;

[0023] forming a first etching-resistant coating on the surface of the component body;

[0024] Performing surface activation treatment on the first etching-resistant coating to form an activated surface;

[0025] Depositing a second etch-resistant coating on the activated surface of the first etch-resistant coating, wherein the second etch-resistant coating is a crystalline yttrium oxyfluoride coating, and the second etch-resistant coating is chemically bonded to the first etch-resistant coating;

[0026] The thermal expansion coefficient of the first etching-resistant coating is between the thermal expansion coefficients of the surface of the component body and the crystalline yttrium oxyfluoride coating.

[0027] Optionally, the first etching resistant coating and the second etching resistant coating are formed by at least one of physical vapor deposition, chemical vapor deposition, atomic deposition, aerogel deposition or ion plating processes to form a crystalline coating structure.

[0028] Optionally, the surface activation treatment includes plasma activation, light activation or free radical activation.

[0029] Optionally, the activation treatment forms active YO bonds, and when forming the second etching-resistant coating, the activated YO bonds chemically react with YOF molecules or precursors to form YOF chemical bonds.

[0030] Optionally, the roughness of the surface of the component body is 1 nm-0.3 μm.

[0031] Optionally, when the roughness of the surface of the component body is greater than 0.3μm, the surface roughness of the first etching-resistant coating formed is large. Before performing surface activation treatment on the first etching-resistant coating, it also includes: polishing the first etching-resistant coating to reduce the surface roughness of the first etching-resistant coating to 1nm-0.3μm.

[0032] Another aspect of the present invention provides a semiconductor processing device, comprising the semiconductor component as described above.

[0033] On the other hand, the present invention further provides a readable storage medium, on which a program or instruction is stored, and when the program or instruction is executed by a processor, the above-mentioned method of forming a coating on the surface of a component body is implemented.

[0034] On the other hand, the present invention also provides a semiconductor processing device, including: a processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein the program or instruction, when executed by the processor, implements the above-mentioned method of forming a coating on the surface of a component body.

[0035] Compared with the prior art, the beneficial effects of the technical solution of the present invention include at least:

[0036] (1) The semiconductor component provided by the present invention adopts a double etching-resistant coating, and the yttrium fluoride oxide coating on the surface is crystalline. Compared with the amorphous yttrium fluoride oxide coating in the prior art, it is dense, smooth and free of pores, has a high coating bonding strength, and is not easily corroded and passivated by fluorine-containing plasma. In addition, the double etching-resistant coating structure can better improve the bonding strength between the crystalline yttrium fluoride oxide coating and the substrate. Specifically, a first etching-resistant coating and a second etching-resistant coating are formed on the surface of the component body in sequence, wherein the second etching-resistant coating is a crystalline YOF coating, which has better plasma etching resistance than the first etching-resistant coating; at the same time, since the thermal expansion coefficient of the first etching-resistant coating is closer to that of the surface of the component body than that of the second etching-resistant coating, the deposited crystalline yttrium fluoride oxide coating is more firmly fixed to the surface of the component body through the transition of the first etching-resistant coating, so that the second etching-resistant coating will not be directly deposited on the surface of the component body and the two will not be corroded. The large difference in thermal expansion coefficients will cause the second etching-resistant coating to break, which helps to improve the bonding stability between the second etching-resistant coating and the component body; and the second etching-resistant coating is chemically bonded to the first etching-resistant coating, which overcomes the problem of easy falling off caused by discontinuous crystal growth at the junction due to microscopic pores and low bonding stress caused by direct deposition of the crystalline yttrium fluoride oxide coating, and further prevents the risk of stratification and peeling of the coating. The two aspects work together to improve the bonding strength between the second etching-resistant coating and the first etching-resistant coating, and indirectly improve the bonding strength with the component body, thereby avoiding cracking and peeling of the crystalline yttrium fluoride oxide coating, and achieving the purpose of improving the etching resistance and service life of the component.

[0037] (2) In the present invention, both the first etching-resistant coating and the second etching-resistant coating are crystalline coatings formed by a deposition process, and the coatings have high density and low porosity; further, the second etching-resistant coating is chemically bonded to the first etching-resistant coating, thereby achieving continuous lattice growth of the first etching-resistant coating and the second etching-resistant coating, and avoiding the problem of easy falling off caused by microscopic pores and bonding stress generated at the junction between the two crystalline coatings due to different lattice growth directions. The two aspects work together to make the double etching-resistant coatings have high density and extremely low porosity or even no pores, thereby ensuring the excellent etching resistance of the coatings.

[0038] (3) The method for forming a surface coating of a semiconductor component provided by the present invention can form a YOF coating with high density, low surface roughness and not easy to crack and fall off on a smooth substrate surface. The preparation process is simple and the effect is good. It prolongs the service life and performance stability of semiconductor components, saves equipment use costs, and is suitable for promotion and application. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a schematic diagram of the structure of the semiconductor component of the present invention.

[0040] Figure 2 The present invention is a flowchart of a method for forming a coating on the surface of a component body according to an embodiment of the present invention.

[0041] Figure 3 This is a SEM image and EDS analysis of the structure of a semiconductor component obtained in one embodiment of the present invention, wherein A: full element labeling of fluorine, oxygen, and yttrium; B: fluorine element labeling; C: no element labeling.

[0042] Figure 4 This is a TEM image of a semiconductor component structure obtained according to an embodiment of the present invention, wherein Figure B is an enlarged image of a portion (red dot) of Figure A.

[0043] Figure ID:

[0044] Component body 1, first etching resistant coating 2, second etching resistant coating 3. DETAILED DESCRIPTION

[0045] In order to solve the above technical problems, an embodiment of the present invention provides a semiconductor component and a coating forming method thereof.

[0046] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0048] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0049] Research findings show that the crystalline YOF etch-resistant coating, compared to the amorphous YOF etch-resistant coating, has a dense and uniform structure due to its regular atomic bonding arrangement, resulting in more stable coating properties and better etch resistance. In addition, the density, surface roughness, and adhesion to the substrate of the protective coating are also important factors affecting the plasma etching performance of semiconductor components. However, there is a significant difference in the thermal expansion coefficients between the YOF coating and the component substrate. The dense coating has extremely low internal porosity, and such a low porosity cannot absorb the coating stress caused by factors such as the difference in thermal expansion coefficients, easily leading to cracking and peeling of the formed coating, thus losing its protective effect. Moreover, the thicker the coating, the more likely it is to crack and peel. Also, the smoother the substrate surface, the smaller the coating adhesion, causing cracks to occur even in thinner coatings, making it difficult to form a protective coating with sufficient thickness and resistance to cracking and peeling on a smooth substrate surface. Using a substrate with a larger surface roughness can improve the adhesion between the coating and the substrate, but the corresponding surface roughness of the coating will also be larger, thereby reducing the plasma etching resistance performance. When reducing the surface roughness of the YOF coating by polishing, cracking or even peeling of the YOF coating is likely to occur under the action of mechanical force, and due to the high deposition cost per unit thickness of the coating itself, there is an expensive cost waste in polishing the coating.

[0050] To solve the above technical problems, the present invention provides a semiconductor component, the surface of which sequentially includes a first etch-resistant coating and a second etch-resistant coating. The second etch-resistant coating is a crystalline YOF coating, which has a high density, strong adhesion to the substrate, and extremely low surface roughness, enabling the semiconductor component to have good plasma etching resistance performance and stable component performance when working in a plasma etching environment, thereby maintaining the stability of the cavity etching rate and etching uniformity.

[0051] The semiconductor component provided by the present invention is applicable to components inside any suitable semiconductor etching chamber, including substrate support assemblies, spray heads, nozzles, chamber walls, chamber gaskets, and plasma screens, etc.

[0052] The following provides a detailed description of the semiconductor component of the present invention:

[0053] As Figure 1 shown, an embodiment of the present invention provides a semiconductor component 100, including: a component body 1, a first etch-resistant coating 2 located on the surface of the component body 1, and a second etch-resistant coating 3 located on the surface of the first etch-resistant coating 2. There is chemical bonding at the junction of the second etch-resistant coating 3 and the first etch-resistant coating 2 (as shown in Figure B of Figure 4 ).

[0054] The second etching-resistant coating 3 is a crystalline yttrium fluoride oxide coating. Compared with the first etching-resistant coating 2, the second etching-resistant coating 3 has better plasma etching resistance. The surface yttrium fluoride oxide coating is crystalline. Compared with the amorphous yttrium fluoride oxide coating in the prior art, it is dense, smooth and non-porous, with high coating bonding strength, and is not easily corroded and passivated by fluorine-containing plasma. It is arranged on the outer surface of the component body 1 and the first etching-resistant coating 2. On the one hand, it can protect the component from being etched by fluorine-containing plasma when working in a plasma environment; on the other hand, it can also prevent the first etching-resistant coating 2 from being etched by fluorine-containing plasma, achieving a double anti-etching effect, thereby ensuring the stable performance of the component.

[0055] In this embodiment, a first etching-resistant coating 2 is disposed between the surface of the component body 1 and the second etching-resistant coating 3. The thermal expansion coefficient of the first etching-resistant coating 2 is the same as that of the substrate material (such as Al 2 O 3 The thermal expansion coefficient of the first etch-resistant coating 2 is close to that of the ceramic substrate, and is between that of the substrate material and the crystalline yttrium fluoride oxide coating. It is arranged between the surface of the component body 1 and the second etching-resistant coating 3, which can solve the problem of easy cracking and peeling of the YOF coating due to the large difference in thermal expansion coefficient with the substrate material, improve the bonding strength between the coating and the substrate, and avoid cracking and peeling of the coating; in addition, since the thermal expansion coefficient of the first etching-resistant coating 2 is close to that of the substrate material and the bonding is more firmly, a thicker first etching-resistant coating 2 can be prepared, and then the overall thickness range of the double-layer protective coating (i.e., the first etching-resistant coating 2 and the second etching-resistant coating 3) can be achieved to have good plasma etching resistance, while reducing the preparation thickness of the second etching-resistant coating 3, so as to solve the problem of high preparation cost of dense YOF coating and reduce the overall cost of the coating.

[0056] Specifically, the thermal expansion coefficient of the first etching-resistant coating 2 is between the thermal expansion coefficients of the surface of the component body 1 and the crystalline yttrium oxyfluoride coating (ie, the second etching-resistant coating 3).

[0057] It can be understood that the thermal expansion coefficient of the first etching resistant coating 2 is between the thermal expansion coefficients of the surface of the component body 1 and the crystalline yttrium oxyfluoride coating, which can be understood as the thermal expansion coefficients between the first etching resistant coating 2 and the surface of the component body 1 have a first difference, the thermal expansion coefficients between the second etching resistant coating 3 and the surface of the component body 1 have a second difference, and the absolute value of the first difference is less than the absolute value of the second difference. The thermal expansion coefficients between the first etching resistant coating 2 and the second etching resistant coating 3 have a third difference, and the absolute value of the third difference is less than the absolute value of the second difference.

[0058] Alternatively, the thermal expansion coefficient of the first etching resistant coating 2 is between the thermal expansion coefficients of the surface of the component body 1 and the crystalline yttrium oxyfluoride coating, which can also be understood as the thermal expansion coefficient of the surface of the component body 1, the thermal expansion coefficient of the first etching resistant coating 2, and the thermal expansion coefficient of the second etching resistant coating 3 are in a gradient relationship. The thermal expansion coefficient of the first etching resistant coating 2 is within the range of the thermal expansion coefficient of the surface of the component body 1 and the thermal expansion coefficient of the second etching resistant coating 3.

[0059] Therefore, the first etching-resistant coating 2 acts as a thermal expansion transition layer, and the absolute value of the difference in thermal expansion coefficient between it and the surface of the component body 1 is small, so a relatively strong coating structure can be formed. On the basis of the first etching-resistant coating 2, the second etching-resistant coating 3 is formed, and the absolute value of the difference in thermal expansion coefficient between the second etching-resistant coating 3 and the first etching-resistant coating 2 is smaller than the absolute value of the difference in thermal expansion coefficient between the second etching-resistant coating 3 and the surface of the component body 1.

[0060] Thus, the deposited crystalline yttrium fluoride oxide coating is more firmly fixed on the surface of the component body 1 through the transition of the first etching-resistant coating 2, so that the second etching-resistant coating 3 will not be directly deposited on the surface of the component body 1 and will not break in the subsequent semiconductor process due to the large difference in thermal expansion coefficients between the two, which helps to improve the bonding stability between the second etching-resistant coating 3 and the component body 1. Furthermore, in this embodiment, the second etching-resistant coating 3 is chemically bonded to the first etching-resistant coating 2, so that there is a strong interface bonding force between the second etching-resistant coating 3 and the first etching-resistant coating 2, preventing the risk of delamination and peeling due to weak interface bonding force of the coating. Specifically, after the surface of the first etching-resistant coating 2 is activated by pre-treatment, the second etching-resistant coating 3 is deposited and grown. Surface activation can form an activated surface, which generally has active groups on the activated surface, and subsequent YOF molecules or precursors will chemically react with the active groups to form YOF chemical bonds. It can be understood that, compared with the simple physical bonding of directly depositing the second etching resistant coating 3 on the first etching resistant coating 2 without surface activation treatment, chemical bonding enhances the bonding force between the second etching resistant coating 3 and the first etching resistant coating 2, thereby reducing the probability of delamination and peeling of the second etching resistant coating 3. As an example, the active group includes an active YO-bond. Alternatively, the active group can also be an active YF-bond, and the active group depends on the composition of the surface material of the first etching resistant coating 2.

[0061] In summary, in this embodiment, on the one hand, a first etching-resistant coating 2 is provided to improve the bonding force between the second etching-resistant coating 3 and the component body 1, and on the other hand, the second etching-resistant coating 3 is chemically bonded to the first etching-resistant coating 2 to prevent the risk of delamination and peeling of the second etching-resistant coating 3. The two aspects work together to improve the bonding force between the second etching-resistant coating 3 and the component body 1 and the first etching-resistant coating 2, thereby avoiding cracking and peeling of the coating, and achieving the purpose of improving the stability and service life of the etching resistance of the component. It can be understood that the coating structure provided in this embodiment is dense and has good consistency and stability. And it can form a strong film-based bonding force with the substrate surface, which can overcome the technical difficulty that the YOF coating on the substrate surface is easy to break and fall off due to excessive differences in thermal expansion stress in subsequent semiconductor high-temperature processes, and is particularly suitable for forming a smooth corrosion-resistant coating.

[0062] In some embodiments, in order to further improve the plasma etching resistance of the double-layer etching-resistant coating, the first etching-resistant coating 2 is also a crystalline coating formed by a deposition process, and the first etching-resistant coating 2 and the second etching-resistant coating 3 can be formed by any one of deposition processes including but not limited to physical vapor deposition, chemical vapor deposition, atomic deposition, aerogel deposition or ion plating, so that the coating has high density and low porosity, and the surface roughness of the first etching-resistant coating 2 formed on the smooth substrate surface is low, thereby improving the plasma etching resistance of the coating; at the same time, since the second etching-resistant coating 3 is chemically bonded to the first etching-resistant coating 2, when the second etching-resistant coating 3 just starts to deposit and grow, the crystal growth will continue the lattice direction of the first etching-resistant coating 2, so that the lattice growth of the first etching-resistant coating 2 and the second etching-resistant coating 3 is continuous (such as Figure 4 As shown in Figure B in the figure), there are no microscopic pores between the second etching-resistant coating 3 and the first etching-resistant coating 2. Otherwise, there will be a lattice arrangement between the two layers of coating, and then there will be a problem of non-zero porosity on a macro scale, resulting in weak coating bonding and reduced etching resistance. It can be understood that in this embodiment, a high-density coating is first formed by a deposition process, and a chemical bond is further formed between the two layers of coating. The two aspects work together to make the first etching-resistant coating 2 and the second etching-resistant coating 3 have a high density, extremely low porosity or even no pores, thereby ensuring the excellent firmness and etching resistance of the coating. As an example, the micron-scale porosity of the first etching-resistant coating 2 and the second etching-resistant coating 3 is 0; the nanoscale porosity of the first etching-resistant coating 2 and the second etching-resistant coating 3 is less than 0.1%.

[0063] In some embodiments, the thickness of the second etching-resistant coating 3 is greater than the thickness of the first etching-resistant coating 2. As an example, the thickness of the first etching-resistant coating 2 is 0.5μm-10μm. It can be understood that if the first etching-resistant coating 2 is too thin, it will not be able to effectively prevent the second etching-resistant coating 3 from cracking and peeling; if it is too thick, it will cause unnecessary material waste and cost increase; the thickness of the second etching-resistant coating is not less than 5μm to ensure the excellent etching resistance of the double-layer etching-resistant coating. If it is too thin, it will not be able to play an effective etching resistance role. In actual application, the thickness of the first etching-resistant coating 2 and the second etching-resistant coating 3 can be selected according to the size of the parts, service life requirements and cost considerations within the above range.

[0064] In some embodiments, the surface roughness of the second etching-resistant coating 3 is 1nm-0.3μm. The smoother the surface of the YOF etching-resistant coating, that is, the lower the surface roughness, the better its etching resistance, and the fewer secondary corrosion passivation and particulate matter problems. And when the coating is deposited on a smooth surface, the coating surface also has substantially the same surface roughness, thereby obtaining a smooth and dense YOF etching-resistant coating. If the surface roughness of the first etching-resistant coating 2 is too large, the surface roughness of the second etching-resistant coating 3 formed by subsequent deposition is also large, and the convexities or concavities on the coating surface are prone to cause corrosive substances to remain, accelerating the corrosion rate of the coating, so that the plasma etching resistance of the second etching-resistant coating 3 is reduced; after the YOF coating is formed, grinding treatment should be avoided, otherwise there will be risks such as stress cracking, increased porosity and particulate matter contamination. Therefore, the problem of excessive surface roughness of the generated coating is avoided by secondary processing such as grinding and polishing. Thus, by depositing the YOF coating on the smooth substrate surface, a YOF coating with almost the same roughness as the substrate surface can be directly formed. The double-layer etching-resistant coating structure of the aforementioned embodiment can ensure a certain thickness of the YOF coating even when deposited on a smooth substrate surface without breaking or falling off.

[0065] It should be noted that when the surface roughness of the coating deposition is large, the YOF coating can also be directly deposited on the relatively rough surface of the component body 1. Some prior art documents claim that the YOF coating at this time can be 30μm, 50μm or even 200μm thick. However, after verification, it was found that the YOF coating at this time still has the problem of high temperature stress difference causing the coating to crack and fall off in the subsequent semiconductor process, and the roughness of the formed YOF coating cannot meet some use requirements that require low roughness coatings. Therefore, the double-layer etching-resistant coating structure of the aforementioned embodiment of the present invention can effectively solve the above problems.

[0066] In some embodiments, the first etching resistant coating 2 is composed of a yttrium oxide coating or a yttrium fluoride coating; in other embodiments, the first etching resistant coating 2 is composed of a yttrium oxide coating and a yttrium fluoride coating, and the yttrium oxide coating and the yttrium fluoride coating are a stacked structure, wherein, in some embodiments, the first etching resistant coating 2 is composed of a layer of yttrium oxide coating and a layer of yttrium fluoride coating, and in other embodiments, the total number of layers of the yttrium oxide coating and the yttrium fluoride coating in the first etching resistant coating 2 is greater than or equal to 3 layers, and the two are alternately stacked.

[0067] In some other embodiments of the present invention, a semiconductor processing device is provided, comprising the semiconductor components as described above.

[0068] Figure 2 The present invention is a flowchart of a method for forming a coating on the surface of a component body according to an embodiment of the present invention.

[0069] Please refer to Figure 2 , specifically including the following steps:

[0070] Step 101, providing a component body 1.

[0071] The component body 1 can be a process chamber component such as a shower head, a mounting base or a liner, and the material of the component body 1 includes but is not limited to aluminum and its alloys, Al 2 O 3 .

[0072] In some embodiments, the roughness of the surface of the component body 1 is 1 nm-0.3 μm; in other embodiments, the roughness of the surface of the component body 1 is greater than 0.3 μm.

[0073] Step 102 , forming a first etching-resistant coating 2 on the surface of the component body 1 .

[0074] The first etching-resistant coating 2 has a close thermal expansion coefficient to the component body 1, which can solve the problem of easy cracking and peeling of the second etching-resistant coating 3 due to the large difference in thermal expansion coefficient with the substrate material, and increase the bonding strength between the second etching-resistant coating 3 and the substrate. As an example, the first etching-resistant coating 2 includes at least one of an yttrium oxide coating and an yttrium fluoride coating.

[0075] In some embodiments, the method for forming the first etching-resistant coating 2 includes but is not limited to at least one of physical vapor deposition, chemical vapor deposition, atomic deposition, aerogel deposition or ion plating processes to form a crystalline coating structure. The coating has high density, small porosity and good stability, which helps to improve the coating's resistance to plasma etching.

[0076] Step 103: performing surface activation treatment on the first etching-resistant coating 2 to obtain an activated surface.

[0077] The surface activation treatment includes but is not limited to surface activation modification methods such as plasma activation, light activation or free radical activation, so that the surface of the first etching resistant coating 2 forms an activated surface, and the activated surface enables the subsequent second etching resistant coating 3 to form a chemical bond connection with the first etching resistant coating 2, thereby improving the coating interface bonding strength. In this embodiment, the activation treatment forms an active YO bond on the surface of the first etching resistant coating 2.

[0078] In some embodiments, when the surface roughness of the selected component body 1 and / or the first etching-resistant coating 2 is greater than 0.3 μm, before performing the surface activation treatment in this step, it also includes: grinding the surface of the first etching-resistant coating 2 to reduce the surface roughness of the first etching-resistant coating 2 to 1nm-0.3μm, so that the surface roughness of the second etching-resistant coating 3 formed by subsequent deposition is also within the range of 1nm-0.3μm, so as to improve the plasma etching resistance of the coating. It can be understood that in other embodiments, when the surface roughness of the selected component body 1 is 1nm-0.3μm, the first etching-resistant coating 2 obtained by the deposition method does not need a grinding step.

[0079] Step 104 : depositing a second etch-resistant coating 3 on the activated surface of the first etch-resistant coating 2 .

[0080] The second etching-resistant coating 3 is a crystalline yttrium fluoride oxide coating, and its formation method includes but is not limited to at least one of physical vapor deposition, chemical vapor deposition, atomic deposition, aerogel deposition or ion plating process. Compared with the first etching-resistant coating 2, the second etching-resistant coating 3 has better plasma etching resistance, and the coating has high density and low porosity, which can improve the plasma erosion resistance of the overall etching-resistant coating.

[0081] When forming the crystalline yttrium fluoride oxide coating, YOF molecules or precursors react chemically with active YO bonds on the surface of the first etching-resistant coating 2 to form chemical bonds. On the one hand, chemical bonding between the second etching-resistant coating 3 and the first etching-resistant coating 2 is achieved, thereby enhancing the bonding strength between the two layers of coating and reducing the risk of delamination and peeling due to weak interface bonding strength. On the other hand, continuous lattice growth of the first etching-resistant coating 2 and the second etching-resistant coating 3 is achieved, so that the coating has extremely low porosity or even no pores, thereby improving the overall plasma etching resistance of the coating.

[0082] Figure 3The SEM and EDS analysis diagrams of the semiconductor component structure prepared in one embodiment of the present invention show that the dark gray at the bottom of Figure C is the substrate, which has a smooth surface. This embodiment successfully deposits a first etching-resistant coating and a second etching-resistant coating on the surface of the smooth substrate, and the two coatings are tightly combined without gaps, and the coatings have high density, no pores inside, and no horizontal or vertical cracks ( Figure 3 C); EDS analysis results ( Figure 3 It can be seen from AB that the first etching-resistant coating in this embodiment is a yttrium oxide coating, and the second etching-resistant coating contains F element (purple). This embodiment successfully deposits a YOF coating with high density, low surface roughness and not easy to crack and fall off on the surface of a smooth substrate.

[0083] At the same time, the semiconductor component structure obtained in this embodiment was also subjected to TEM analysis, and the results are as follows: Figure 4 As shown, the junction of the first etching resistant coating 2 and the second etching resistant coating 3 is enlarged as shown in the figure Figure 4 As shown in Figure B, it can be seen that the lattice fringes are obvious, the crystal growth direction is continuous, regular and dense, and there are no visible pores at the 5nm scale.

[0084] In other embodiments of the present invention, a readable storage medium is provided, on which a program or instruction is stored. When the program or instruction is executed by a processor, any of the above-mentioned methods for forming a coating on the surface of a component body is implemented.

[0085] In other embodiments of the present invention, there is also provided a semiconductor processing device, comprising: a processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein when the program or instruction is executed by the processor, any of the aforementioned methods for forming a coating on the surface of a component body is implemented.

[0086] In some embodiments, the processor may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the processor may be located in the "cloud" or in all or part of a wafer fab host computer system, which may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance metrics from multiple manufacturing operations, change the parameters of the current process, set the processing steps to be followed in the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network that may include a local network or the Internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters of each processing step to be performed during one or more operations. These parameters may be specific to the type of process to be performed and the type of tool to which the controller is configured to be connected or controlled. Therefore, as described above, the processor may be distributed, such as by including one or more discrete controllers that are networked together and work toward a common purpose (e.g., the process and control described herein). One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) that combine to control the process on the chamber.

[0087] In summary, the method for forming a surface coating of a semiconductor component provided by the present invention can form a YOF coating with high density, low surface roughness and not easy to crack and fall off on a smooth substrate surface. Specifically, a deposition process is adopted to sequentially form a crystalline first etching-resistant coating and a YOF coating on the surface of the semiconductor component. The coating has high density and low porosity. The first etching-resistant coating has a thermal expansion coefficient close to that of the substrate material. By arranging it between the substrate and the YOF coating, and chemically bonding the YOF coating to the first etching-resistant coating at the same time, the two aspects work together to avoid cracking and peeling of the coating, and there is no microscopic (under 5nm scale) pores between the two layers of coating, thereby avoiding cracking and falling off of the etching-resistant coating, improving the plasma etching resistance of the coating, and extending the service life and stable performance of the semiconductor component.

[0088] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A semiconductor component, It is characterized in that include: Component body; A first etching-resistant coating is located on the surface of the component body; A second etching-resistant coating is deposited on the surface of the first etching-resistant coating to form a crystalline yttrium oxyfluoride coating; The second etch-resistant coating is chemically bonded to the first etch-resistant coating; The thermal expansion coefficient of the first etching-resistant coating is between the thermal expansion coefficients of the surface of the component body and the crystalline yttrium oxyfluoride coating.

2. The semiconductor component according to claim 1, It is characterized in that The surface roughness of the second etching resistant coating is 1 nm-0.3 μm.

3. The semiconductor component according to claim 1, It is characterized in that The micron-scale porosity of the first etching-resistant coating layer and the second etching-resistant coating layer is 0.

4. The semiconductor component according to claim 1, It is characterized in that The nanoscale porosity of the first etch-resistant coating layer and the second etch-resistant coating layer is less than 0.1%.

5. The semiconductor component according to claim 1, It is characterized in that The thickness of the second etching resistant coating layer is greater than the thickness of the first etching resistant coating layer.

6. The semiconductor component according to claim 5, It is characterized in that The thickness of the first etching resistant coating is 0.5 μm-10 μm.

7. The semiconductor component according to claim 5, It is characterized in that The thickness of the second etching resistant coating is not less than 5 μm.

8. The semiconductor component according to claim 1, It is characterized in that The first etching-resistant coating includes at least one of a yttrium oxide coating and a yttrium fluoride coating.

9. The semiconductor component according to claim 1, It is characterized in that The first etching resistant coating includes a yttrium oxide coating and a yttrium fluoride coating, and the yttrium oxide coating and the yttrium fluoride coating are alternately stacked.

10. A method for forming a coating on the surface of a component body, It is characterized in that include: Providing a component body; forming a first etching-resistant coating on the surface of the component body; Performing surface activation treatment on the first etching-resistant coating to form an activated surface; Depositing a second etch-resistant coating on the activated surface of the first etch-resistant coating, wherein the second etch-resistant coating is a crystalline yttrium oxyfluoride coating, and the second etch-resistant coating is chemically bonded to the first etch-resistant coating; The thermal expansion coefficient of the first etching-resistant coating is between the thermal expansion coefficients of the surface of the component body and the crystalline yttrium oxyfluoride coating.

11. The method for forming a coating on the surface of a component body according to claim 10, It is characterized in that The first etching resistant coating and the second etching resistant coating are formed by at least one of physical vapor deposition, chemical vapor deposition, atomic deposition, aerogel deposition or ion plating processes to form a crystalline coating structure.

12. The method for forming a coating on the surface of a component body according to claim 10, It is characterized in that The surface activation treatment includes plasma activation, light activation or free radical activation.

13. The method for forming a coating on the surface of a component body according to claim 12, It is characterized in that The activation treatment forms active YO bonds. When the second etching-resistant coating is formed, the activated YO bonds react chemically with YOF molecules or precursors to form YOF chemical bonds.

14. The method for forming a coating on the surface of a component body according to claim 11, It is characterized in that The roughness of the surface of the component body is 1nm-0.3μm.

15. The method for forming a coating on the surface of a component body according to claim 11, It is characterized in that When the surface roughness of the component body is greater than 0.3 μm, the surface roughness of the first etching-resistant coating formed is large. Before the first etching-resistant coating is subjected to surface activation treatment, it also includes: polishing the first etching-resistant coating to reduce the surface roughness of the first etching-resistant coating to 1 nm-0.3 μm.

16. A semiconductor processing device, It is characterized in that Comprising the semiconductor component according to any one of claims 1 to 9.

17. A readable storage medium, It is characterized in that The readable storage medium stores a program or instruction, and when the program or instruction is executed by the processor, the method for forming a coating on the surface of a component body as described in any one of claims 10 to 15 is implemented.

18. A semiconductor processing device, It is characterized in that include: A processor, a memory, and a program or instruction stored in the memory and executable on the processor, wherein the program or instruction, when executed by the processor, implements the method for forming a coating on the surface of a component body as described in any one of claims 10 to 15.

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