Ion implantation angle monitoring method and device and semiconductor machine

Abstract

The invention discloses a method and a device for monitoring an ion implantation angle and a semiconductor machine. The method comprises the following steps of: defining a first region comprising a plurality of first sub-regions and a second region comprising a plurality of second sub-regions on a monitoring wafer; sequentially performing first ion implantation on the first sub-region according to a plurality of preset deviation angles, rotating the monitoring wafer after the first ion implantation by a first angle, and sequentially performing second ion implantation on the second sub-region according to the preset deviation angles; and for the monitoring wafer after ion implantation, determining a first thermal wave value corresponding to each first sub-region and a second thermal wave value corresponding to each second sub-region, and determining an ion implantation angle according to the first thermal wave value, the second thermal wave value and a preset deviation angle. As the monitoring wafer is rotated, the crystal orientation angle of the monitoring wafer is counteracted in the process of calculating the ion implantation angle, the influence caused by crystal orientation deviation is weakened, and the accuracy of the ion implantation angle is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a method and device for monitoring an ion implantation angle and a semiconductor machine. Background Art

[0002] Ion implantation is a very important technology in the semiconductor manufacturing process. It uses ion implantation machines to dope semiconductors, that is, to inject specific impurity atoms into the wafer in an ion-accelerated manner to change its conductive properties and ultimately form a transistor structure. As the line width of semiconductor chip design becomes smaller and smaller, the precision requirements for semiconductor manufacturing processes are getting higher and higher. Similarly, the precision requirements for ion implantation processes are also getting higher and higher.

[0003] During the process of ion implantation on the wafer, the wafer is adsorbed on the target plate of the ion implantation machine. The tilt angle of the wafer is adjusted by adjusting the tilt angle of the target plate. Since the spatial angle of the ion beam is physically controlled by the narrow slit at the front end of the ion implantation machine, the accuracy of the tilt angle of the wafer is directly related to the accuracy of the ion implantation angle.

[0004] In the related art, a method is usually adopted in which ions are implanted at different angles on multiple monitoring wafers to determine the method for adjusting the ion implantation angle of the target plate. However, in the above method, due to the differences in production batches and production processes of the multiple monitoring wafers, the crystal orientation angles of the multiple monitoring wafers deviate, thereby reducing the accuracy of the ion implantation angle determined by the above method, thereby affecting the working efficiency of the ion implantation machine. Summary of the invention

[0005] The present application provides a method, device and semiconductor machine for monitoring an ion implantation angle, which are used to solve the problem in the prior art that the accuracy of the determined ion implantation angle is reduced due to the deviation of the crystal orientation angle of the wafer, thereby affecting the working efficiency of the semiconductor machine.

[0006] In a first aspect, an embodiment of the present application provides a method for monitoring an ion implantation angle, comprising:

[0007] Providing a monitoring wafer, defining a first region and a second region on the monitoring wafer, defining a plurality of first sub-regions in the first region, and defining a plurality of second sub-regions in the second region;

[0008] According to a plurality of preset offset angles, sequentially perform a first ion implantation on the plurality of first sub-regions, and after rotating the monitoring wafer after the first ion implantation by a first angle, sequentially perform a second ion implantation on the plurality of second sub-regions according to the plurality of preset offset angles;

[0009] Thermal wave measurement is performed on the monitoring wafer after the second ion implantation to obtain a first thermal wave value corresponding to each of the first sub-regions and a second thermal wave value corresponding to each of the second sub-regions, and the ion implantation angle is determined based on the first thermal wave value, the second thermal wave value and the preset offset angle.

[0010] In the ion implantation angle monitoring method provided in the embodiment of the present application, ion implantation is performed on the same monitoring wafer at different preset offset angles, and thermal wave measurement is performed on different areas of the monitoring wafer, and the ion implantation angle is determined according to the measurement results. Since only one monitoring wafer is needed in the method provided in the embodiment of the present application to achieve the purpose of monitoring the ion implantation angle, the amount of wafers used is reduced, and the measurement time required for thermal wave measurement of the wafer is also reduced. In addition, since the wafer is rotated at a first angle during the ion implantation process, the crystal orientation of the monitoring wafer during the first ion implantation and the crystal orientation of the monitoring wafer during the second ion implantation can be offset during the ion implantation angle calculation process, thereby reducing the influence of the crystal orientation deviation, improving the accuracy of the ion implantation angle, and further improving the working efficiency of the semiconductor machine used for ion implantation.

[0011] In an optional implementation, the performing the first ion implantation on the plurality of first sub-regions in sequence according to the plurality of preset offset angles comprises:

[0012] For any one of the plurality of preset offset angles, perform the following operations:

[0013] Adjusting the monitoring wafer to the preset offset angle;

[0014] Selecting a first target sub-region from the plurality of first sub-regions of the adjusted monitoring wafer, wherein the first target sub-region is a region where the first ion implantation is not performed;

[0015] A first ion implantation is performed on the first target sub-region.

[0016] The above method adjusts the monitoring wafer to a preset offset angle, selects an area that has not been ion implanted from multiple first sub-areas of the adjusted monitoring wafer as the first target sub-area, and performs the first ion implantation on the first target sub-area, thereby achieving ion implantation at different preset offset angles on the same monitoring wafer, thereby achieving the purpose of reducing the use of monitoring wafers.

[0017] In an optional implementation, determining the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle includes:

[0018] Determine a first fitting curve according to the first thermal wave value and the preset offset angle, and determine a second fitting curve according to the second thermal wave value and the preset offset angle;

[0019] Using the offset angle corresponding to the symmetry axis of the first fitting curve as a first ion implantation angle, and using the offset angle corresponding to the symmetry axis of the second fitting curve as a second ion implantation angle;

[0020] An average value of the first ion implantation angle and the second ion implantation angle is calculated, and the average value is used as the ion implantation angle.

[0021] The above method obtains the first ion implantation angle by obtaining the symmetry axis for multiple first thermal wave values ​​and multiple preset offset angles, and obtains the second ion implantation angle by obtaining the symmetry axis for multiple second thermal wave values ​​and multiple preset offset angles, and uses the average of the first ion implantation angle and the second ion implantation angle as the ion implantation angle. Since the crystal orientation deviations in the multiple first thermal wave values ​​and the crystal orientation deviations in the multiple second thermal wave values ​​can offset each other, the ion implantation angle determined by the above method can reduce the influence of the crystal orientation deviation and improve the accuracy of the ion implantation angle.

[0022] In an optional embodiment, the first angle is 180°.

[0023] The above method rotates the monitoring wafer 180° after the first ion implantation so that the crystal orientation deviation after rotation is the negative value of the crystal orientation deviation after rotation, thereby facilitating direct offset of the crystal orientation deviation in subsequent calculations to reduce the impact of the crystal orientation deviation and improve the accuracy of the ion implantation angle.

[0024] In an optional embodiment, the first area and the second area are symmetrically arranged on both sides of a distribution symmetry axis, wherein the distribution symmetry axis is any straight line passing through a center point of the monitoring wafer.

[0025] In the above method, since the first region and the second region are symmetrically arranged along the distribution symmetry axis, after the monitoring wafer is rotated by a first angle, the crystal orientation deviation of the first region and the crystal orientation deviation of the second region can be exactly offset, thereby reducing the impact of the crystal orientation deviation.

[0026] In an optional implementation, the number of the first sub-regions is equal to the number of the second sub-regions, or the number of the first sub-regions is not equal to the number of the second sub-regions.

[0027] The above method, by setting the number of first sub-regions and the number of second sub-regions equal, makes the accuracy of the first ion implantation angle determined according to the first sub-region consistent with the accuracy of the second ion implantation angle determined according to the second sub-region, thereby ensuring the accuracy of the ion implantation angle; by setting the number of first sub-regions and the number of second sub-regions unequal, specifically, the number of first sub-regions can be set greater than the number of second sub-regions to improve the accuracy of the first ion implantation angle, and the number of second sub-regions can be set greater than the number of first sub-regions to improve the accuracy of the second ion implantation angle, thereby improving the accuracy of the ion implantation angle without significantly increasing the number of sub-regions.

[0028] In an optional implementation, the multiple preset offset angles are multiple offset angles that are symmetrically distributed according to a preset reference offset angle.

[0029] The above method sets multiple preset offset angles to be symmetrically distributed with a preset reference offset angle as the center of symmetry, so that when determining the ion implantation angle, the accuracy of the first ion implantation angle and the second ion implantation angle determined by fitting the curve and obtaining the symmetry axis is higher, thereby improving the accuracy of the ion implantation angle determined by the first ion implantation angle and the second ion implantation angle.

[0030] In a second aspect, an embodiment of the present application provides a computer-readable storage medium, which stores computer instructions. When the computer instructions are executed on a computer, the computer executes the steps of the ion implantation angle monitoring method as described in any embodiment of the first aspect above.

[0031] In a third aspect, an embodiment of the present application provides a device for monitoring an ion implantation angle, comprising:

[0032] An area definition module is used to provide a monitoring wafer, define a first area and a second area on the monitoring wafer, define a plurality of first sub-areas in the first area, and define a plurality of second sub-areas in the second area;

[0033] An ion implantation module, configured to sequentially perform a first ion implantation on the plurality of first sub-regions according to a plurality of preset offset angles, and after rotating the monitoring wafer after the first ion implantation by a first angle, sequentially perform a second ion implantation on the plurality of second sub-regions according to the plurality of preset offset angles;

[0034] An angle determination module is used to perform thermal wave measurement on the monitoring wafer after the second ion implantation, obtain a first thermal wave value corresponding to each of the first sub-regions, and a second thermal wave value corresponding to each of the second sub-regions, and determine the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle.

[0035] In an optional embodiment, the ion implantation module is specifically used for:

[0036] For any one of the plurality of preset offset angles, perform the following operations:

[0037] Adjusting the monitoring wafer to the preset offset angle;

[0038] Selecting a first target sub-region from the plurality of first sub-regions of the adjusted monitoring wafer, wherein the first target sub-region is a region where the first ion implantation is not performed;

[0039] A first ion implantation is performed on the first target sub-region.

[0040] In an optional implementation, the angle determination module is specifically used to:

[0041] Determine a first fitting curve according to the first thermal wave value and the preset offset angle, and determine a second fitting curve according to the second thermal wave value and the preset offset angle;

[0042] Using the offset angle corresponding to the symmetry axis of the first fitting curve as a first ion implantation angle, and using the offset angle corresponding to the symmetry axis of the second fitting curve as a second ion implantation angle;

[0043] An average value of the first ion implantation angle and the second ion implantation angle is calculated, and the average value is used as the ion implantation angle.

[0044] In an optional embodiment, the first angle is 180°.

[0045] In an optional embodiment, the first area and the second area are symmetrically arranged on both sides of a distribution symmetry axis, wherein the distribution symmetry axis is any straight line passing through a center point of the monitoring wafer.

[0046] In an optional implementation, the number of the first sub-regions is equal to the number of the second sub-regions, or the number of the first sub-regions is not equal to the number of the second sub-regions.

[0047] In an optional implementation, the multiple preset offset angles are multiple offset angles that are symmetrically distributed according to a preset reference offset angle.

[0048] In a fourth aspect, an embodiment of the present application provides a semiconductor machine, comprising an ion generating device and an ion implantation angle monitoring device as described in the second aspect above, wherein: the ion generating device is used to generate an ion beam for ion implantation into a wafer.

[0049] For the technical effects that may be achieved by the computer-readable storage medium disclosed in the second aspect, the ion implantation angle monitoring device disclosed in the third aspect, and the semiconductor machine disclosed in the fourth aspect, please refer to the technical effects that can be achieved by the first aspect or various possible schemes in the first aspect, and they will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0051] Figure 1 A schematic diagram of a structure for monitoring different crystal orientation angles of a wafer provided for related technology;

[0052] Figure 2 A waveform diagram of an ion implantation angle determined by an ion implantation angle monitoring method provided in the related art;

[0053] Figure 3 A schematic diagram of a flow chart of a method for monitoring an ion implantation angle provided in an embodiment of the present application;

[0054] Figure 4a A schematic diagram of the distribution of a first area and a second area of ​​a monitoring wafer provided in an embodiment of the present application;

[0055] Figure 4b A schematic diagram of the distribution of a first area and a second area of ​​another monitoring wafer provided in an embodiment of the present application;

[0056] Figure 4c A schematic diagram of the distribution of a first area and a second area of ​​another monitoring wafer provided in an embodiment of the present application;

[0057] Figure 5a A schematic diagram of the distribution of a first sub-area and a second sub-area of ​​a monitoring wafer provided in an embodiment of the present application;

[0058] Figure 5b A schematic diagram of the distribution of a first sub-area and a second sub-area of ​​another monitoring wafer provided in an embodiment of the present application;

[0059] Figure 6 A schematic diagram of a structure for rotating a monitoring wafer provided in an embodiment of the present application;

[0060] Figure 7a A curve schematic diagram of a first fitting curve provided in an embodiment of the present application;

[0061] Figure 7b A curve schematic diagram of a second fitting curve provided in an embodiment of the present application;

[0062] Figure 8 A waveform diagram of an ion implantation angle determined by a method for monitoring an ion implantation angle provided in an embodiment of the present application;

[0063] Fig. 9 A schematic diagram of the module structure of a device for monitoring ion implantation angle provided in an embodiment of the present application;

[0064] Fig.10 A schematic diagram of the structure of a semiconductor machine provided in an embodiment of the present application;

[0065] Fig.11 A schematic diagram of a program product of a method for monitoring an ion implantation angle provided in an embodiment of the present application. DETAILED DESCRIPTION

[0066] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0067] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the attached claims.

[0068] Ion implantation is a very important technology in the semiconductor manufacturing process. It can be used to dope semiconductors, that is, to inject specific impurity atoms into the wafer in an ion-accelerated manner to change its conductive properties and eventually form a transistor structure. As the line width of semiconductor chip design becomes smaller and smaller, the precision requirements for semiconductor manufacturing processes are getting higher and higher. Similarly, the precision requirements for ion implantation processes are also getting higher and higher.

[0069] During the process of ion implantation on the wafer, since the spatial angle of the ion beam is physically controlled by the narrow slit at the front end of the ion implantation machine, the tilt angle of the wafer (hereinafter referred to as the offset angle in the embodiment of the present application) is usually used as the ion implantation angle during the ion implantation process. In the specific implementation, since the wafer is adsorbed on the target plate of the ion implantation machine, the tilt angle of the wafer can be adjusted by adjusting the tilt angle of the target plate. The accuracy of the tilt angle of the wafer is directly related to the accuracy of the ion implantation angle. And because the average daily throughput of the ion implantation machine is large, it is necessary to monitor the ion implantation angle in the ion implantation machine so as to detect abnormalities in the ion implantation process in a timely manner to avoid affecting the quality of the manufactured semiconductor products.

[0070] In the ion implantation angle monitoring method of the related art, multiple monitoring wafers are usually used, and the tilt angles of the multiple monitoring wafers are set to a series of symmetrical angles. For example, the tilt angles are set to -1°, -0.5°, 0°, 0.5°, and 1°. Ion implantation operations are performed on the monitoring wafers with set tilt angles, and the thermal wave values ​​of the multiple monitoring wafers after ion implantation are measured respectively. An ion implantation angle is determined based on the multiple thermal wave values, and it is verified whether the ion implantation angle meets the requirements.

[0071] However, in the above method, due to differences in production batches and production processes of multiple monitoring wafers, there are deviations between the crystal orientation angles of different monitoring wafers, where the crystal orientation angle is the angle between the normal direction and the crystal direction of the wafer. Figure 1 is a schematic diagram of a different monitoring wafer crystal orientation angle ε, such as Figure 1 As shown, the crystal direction 101 and the normal direction 102 in the monitoring wafer 11 form a crystal direction angle ε1, and the crystal direction 103 and the normal direction 102 in the monitoring wafer 12 form a crystal direction angle ε2. Since the crystal direction 101 of the monitoring wafer 11 is different from the crystal direction 103 of the monitoring wafer 12, the crystal direction angle ε1 is different from the crystal direction angle ε2, that is, there is a deviation in the crystal direction angles of different monitoring wafers;

[0072] The existence of crystal orientation angle deviation will cause fluctuations in the ion implantation angle obtained in each monitoring. Figure 2The waveform diagram obtained by performing multiple monitoring using the ion implantation angle monitoring method in the related art is shown in FIG. Figure 2 In the waveform diagram shown, the X-axis is the number of monitoring times, and the Y-axis is the ion implantation angle. It can be seen from the waveform diagram that 10 monitorings are performed using the ion implantation angle monitoring method in the related art, and the ion implantation angles for each monitoring are obtained. There are differences in the ion implantation angles obtained each time. For example, the ion implantation angle determined by the first monitoring is approximately 0.05°, but the ion implantation angle determined by the second monitoring is approximately 0.08°, resulting in a large volatility in the monitoring results, which reduces the accuracy of the ion implantation angle and affects the working efficiency of the ion implantation machine. In addition, the use of multiple monitoring wafers not only results in a high monitoring cost, but also a high time cost for measuring the thermal wave values ​​of multiple monitoring wafers.

[0073] Based on this, the embodiments of the present application provide a method, device and semiconductor machine for monitoring the ion implantation angle, so as to improve the accuracy of monitoring the ion implantation angle, thereby improving the working efficiency of the semiconductor machine.

[0074] The technical solution in this application will be described below in conjunction with the accompanying drawings:

[0075] In one or more embodiments, the ion implantation angle monitoring method provided in the embodiments of the present application can be applied in a semiconductor machine.

[0076] It should be noted that the semiconductor machine 10 in the embodiment of the present application may be a dedicated ion implantation machine, or may be other semiconductor machines with ion implantation functions, and the embodiment of the present application does not impose any limitation on this.

[0077] The following is a description of the ion implantation angle monitoring method provided by the present application through a specific embodiment. Figure 3 As shown, the method comprises the following steps:

[0078] In step S301 , a monitoring wafer is provided, a first region and a second region are defined on the monitoring wafer, a plurality of first sub-regions are defined in the first region, and a plurality of second sub-regions are defined in the second region.

[0079] In an optional embodiment, the first area and the second area are symmetrically arranged on both sides of the distribution symmetry axis, wherein the distribution symmetry axis is any straight line passing through the center point of the monitoring wafer.

[0080] In one or more embodiments, Figure 4a As shown, for a monitoring wafer 40 , the distribution symmetry axis L1 divides the monitoring wafer 40 into two left-right symmetrical regions, and the left half region of the monitoring wafer is used as the first region 401 , and the right half region of the monitoring wafer is used as the second region 402 .

[0081] In one or more embodiments, Figure 4b As shown, for a monitoring wafer 40 , the distribution symmetry axis L2 divides the monitoring wafer into two upper and lower symmetrical regions, and the upper half of the monitoring wafer is used as the first region 401 , and the lower half of the monitoring wafer is used as the second region 402 .

[0082] It should be noted that the distribution symmetry axis in the embodiment of the present application can be any straight line passing through the center point of the monitoring wafer. Figure 4a and Figure 4b The two area definition methods are only examples and should not limit the present application in any way. In an optional implementation, the first angle is 180°.

[0083] By symmetrically arranging the first region and the second region along the distribution symmetry axis, after the monitoring chip is rotated at a first angle, when the crystal orientation angle of the first region is ε, the crystal orientation angle of the second region is exactly -ε. In the subsequent calculation process, the crystal orientation angles of the two regions can be offset, thereby reducing the impact of the crystal orientation angle.

[0084] In an optional implementation, the first area and the second area are two random areas on the monitoring wafer, and there is no overlapping area between the first area and the second area.

[0085] In one or more embodiments, Figure 4c As shown, for a monitoring wafer 40 , a portion of the monitoring wafer is used as a first region 401 , and another portion of the monitoring wafer is used as a second region 402 .

[0086] It should be noted that the surface of the monitoring wafer on the side close to the ion generating device is set as the first surface. In the embodiment of the present application, the sum of the area of ​​the first region and the area of ​​the second region can be equal to the area of ​​the first surface of the monitoring wafer, or can be smaller than the area of ​​the first surface of the monitoring wafer. The embodiment of the present application does not impose any restrictions on this.

[0087] The following embodiments are all based on Figure 4a The method of defining the first area and the second area shown in is taken as an example to illustrate:

[0088] In a specific implementation, after defining the first area 401 and the second area 402 on the monitoring wafer 40, as shown in FIG. Figure 5a As shown, a plurality of first sub-regions (511, 512, ..., 51n) are defined in the first region 401, where n is a positive integer, and a plurality of second sub-regions (521, 522, ..., 52n) are defined in the second region 402, where m is a positive integer.

[0089] It should be noted that, in the embodiment of the present application, the widths of multiple first sub-regions can be equal, the widths of multiple first sub-regions can also gradually increase or decrease, or the widths of multiple first sub-regions can also be random, and the embodiment of the present application does not impose any restrictions on this; in the embodiment of the present application, the widths of multiple second sub-regions can be equal, the widths of multiple second sub-regions can also gradually increase or decrease, or the widths of multiple second sub-regions can also be random, and the embodiment of the present application does not impose any restrictions on this.

[0090] For example, taking the first sub-region as an example, assuming that the diameter of the monitoring wafer 40 is: d = 300mm, and 5 first sub-regions (511, 512, ..., 515) are defined in the first region 401, then the width of the 5 first sub-regions can be set to 60mm; the width of the 5 first sub-regions can also be set to: 20mm, 40mm, 60mm, 80mm, 100mm in sequence; the width of the 5 first sub-regions can also be set to: 75mm, 30mm, 80mm, 95mm, 20mm in sequence.

[0091] Since the definition of the second sub-region is similar to that of the first sub-region, it will not be described in detail.

[0092] In an optional implementation, the number of the first sub-regions is equal to the number of the second sub-regions.

[0093] For example, Figure 5b As shown, five first sub-regions (511, 512, 513, 514, 515) are divided in the first region, and five second sub-regions (521, 522, 523, 524, 525) are correspondingly divided in the second region, and the width of the first sub-region is the same as that of the second sub-region.

[0094] By setting the number of the first sub-regions to be equal to the number of the second sub-regions, the accuracy of the first ion implantation angle determined according to the first sub-regions is consistent with the accuracy of the second ion implantation angle determined according to the second sub-regions, thereby ensuring the accuracy of the ion implantation angle;

[0095] In an optional implementation, the number of the first sub-regions is not equal to the number of the second sub-regions.

[0096] Exemplarily, the first area 401 is divided into five first sub-areas, and the second area 402 is divided into six second sub-areas.

[0097] Exemplarily, eight first sub-regions are divided in the first region 401 , and three second sub-regions are divided in the second region 402 .

[0098] By setting the number of first sub-regions and the number of second sub-regions to be unequal, specifically, the number of first sub-regions can be set to be greater than the number of second sub-regions to improve the accuracy of the first ion implantation angle, or the number of second sub-regions can be set to be greater than the number of first sub-regions to improve the accuracy of the second ion implantation angle, thereby improving the accuracy of the ion implantation angle without significantly increasing the number of sub-regions.

[0099] It should be noted that, in the embodiment of the present application, the number of defined sub-areas can be an odd number or an even number, and the embodiment of the present application does not impose any limitation on this.

[0100] In step S302, a first ion implantation is sequentially performed on a plurality of first sub-regions according to a plurality of preset offset angles, and after rotating the monitoring wafer after the first ion implantation by a first angle, a second ion implantation is sequentially performed on a plurality of second sub-regions according to a plurality of preset offset angles.

[0101] In an optional implementation, the multiple preset offset angles are multiple offset angles that are symmetrically distributed according to a preset reference offset angle.

[0102] Optionally, the preset reference offset angle in the embodiment of the present application is 0°.

[0103] In one or more embodiments, if the number of the first sub-regions is equal to the number of the second sub-regions, the number of the preset offset angles is equal to the number of the first sub-regions.

[0104] For example, if 5 first sub-areas and 5 second sub-areas are defined in the monitoring wafer, 5 preset offset angles can be set, such as -1°, -0.5°, 0°, 0.5°, and 1°. If 6 first sub-areas and 6 second sub-areas are defined in the monitoring wafer, 6 preset offset angles can be set, such as -1°, -0.5°, -0.2°, 0.2°, 0.5°, and 1°.

[0105] In one or more embodiments, if the number of the first sub-areas is not equal to the number of the second sub-areas, the larger value of the numbers is used as the number of preset offset angles.

[0106] For example, if 5 first sub-areas and 6 second sub-areas are defined in the monitoring wafer, 6 preset offset angles can be set, such as -1°, -0.5°, -0.2°, 0.2°, 0.5°, and 1°. If 7 first sub-areas and 6 second sub-areas are defined in the monitoring wafer, 7 preset offset angles can be set, such as -1°, -0.5°, -0.2°, 0°, 0.2°, 0.5°, and 1°.

[0107] By setting multiple preset offset angles to be symmetrically distributed with the preset reference offset angle as the symmetry center, when determining the ion implantation angle, the accuracy of the first ion implantation angle and the second ion implantation angle determined by fitting the curve and obtaining the symmetry axis is higher, thereby improving the accuracy of the ion implantation angle determined by the first ion implantation angle and the second ion implantation angle.

[0108] In an optional embodiment, the first ion implantation can be achieved by:

[0109] For any of the multiple preset offset angles, do the following:

[0110] Adjusting the monitoring wafer to a preset offset angle;

[0111] Selecting a first target sub-region from a plurality of first sub-regions of the adjusted monitoring wafer, wherein the first target sub-region is a region where the first ion implantation is not performed;

[0112] A first ion implantation is performed on the first target sub-region.

[0113] The following examples are Figure 5b Taking the region definition method shown in as an example, the specific implementation method of the first ion implantation is explained:

[0114] Exemplarily, assuming that the monitoring wafer includes 5 first sub-regions (511, 512, 513, 514, 515) and 5 second sub-regions (521, 522, 523, 524, 525), and the preset offset angles are set to be: -1°, -0.5°, 0°, 0.5°, 1°, respectively. The specific implementation of the first ion implantation can be implemented in the following two ways:

[0115] Method 1:

[0116] The monitoring wafer is deflected in sequence according to the preset offset angles, and ions are implanted into the first sub-region in sequence, as follows:

[0117] First, the monitoring wafer is adjusted to -1°, and the first sub-region 511 is used as the first target sub-region, and ions are implanted into the first sub-region 511; then, the monitoring wafer is further adjusted to -0.5°, and the first sub-region 512 is used as the first target sub-region, and ions are implanted into the first sub-region 512; then, the monitoring wafer is further adjusted to 0°, and the first sub-region 513 is used as the first target sub-region, and ions are implanted into the first sub-region 513; then, the monitoring wafer is further adjusted to 0.5°, and the first sub-region 514 is used as the first target sub-region, and ions are implanted into the first sub-region 514; finally, the monitoring wafer is further adjusted to 1°, and the first sub-region 515 is used as the first target sub-region, and ions are implanted into the first sub-region 515; thereby, the first ion implantation of the monitoring wafer is realized.

[0118] Method 2:

[0119] The monitoring wafer is deflected in sequence according to the preset offset angles, and ions are randomly implanted into the first sub-area, as follows:

[0120] First, the monitoring wafer is adjusted to -1°, a sub-region is randomly selected from the five first sub-regions as the first target sub-region, such as the first sub-region 512 as the first target sub-region, and ions are implanted into the first target sub-region;

[0121] Then, the monitoring wafer is further adjusted to -0.5°, and a sub-region is randomly selected from the remaining four first sub-regions that have not been ion-implanted as the first target sub-region, such as the first sub-region 515 as the first target sub-region, and ion implantation is performed on the first target sub-region;

[0122] Then, the monitoring wafer is further adjusted to 0°, and a sub-region is randomly selected from the remaining three first sub-regions that have not been ion-implanted as the first target sub-region, such as the first sub-region 511 as the first target sub-region, and ion implantation is performed on the first target sub-region;

[0123] Then, the monitoring wafer is further adjusted to 0.5°, and a sub-region is randomly selected from the remaining two first sub-regions that have not been ion-implanted as the first target sub-region, such as the first sub-region 514 as the first target sub-region, and ion implantation is performed on the first target sub-region;

[0124] Finally, the monitoring wafer is further adjusted to 1°, and the remaining first sub-region that has not been ion implanted, namely the first sub-region 513, is used as the first target sub-region, and ions are implanted into the first target sub-region; thereby realizing the first ion implantation of the monitoring wafer.

[0125] In a specific implementation, after the ion implantation is completed in all the first sub-regions in the first region of the monitoring wafer, the monitoring wafer is rotated by a first angle, and a second ion implantation operation is performed on the second region in the rotated monitoring wafer.

[0126] Optionally, the first angle in the embodiment of the present application is 180°, that is, the monitoring wafer is rotated 180°, at which time the second area of ​​the monitoring wafer reaches the original position of the first area. Therefore, if the crystal orientation angle of the monitoring wafer is ε, after the monitoring wafer is rotated 180°, the crystal orientation angle of the monitoring wafer will become -ε.

[0127] In an optional embodiment, the second ion implantation can be achieved by:

[0128] For any of the multiple preset offset angles, do the following:

[0129] Adjusting the monitoring wafer after rotating the first angle to a preset offset angle;

[0130] Selecting a second target sub-region from the plurality of second sub-regions of the adjusted monitoring wafer, wherein the second target sub-region is a region where the second ion implantation is not performed;

[0131] A second ion implantation is performed on the second target sub-region.

[0132] The specific implementation method of the second ion implantation in the embodiment of the present application is similar to the specific implementation method of the first ion implantation, so it will not be repeated here.

[0133] Exemplarily, assuming that the monitoring wafer includes 5 first sub-areas (511, 512, 513, 514, 515) and 5 second sub-areas (521, 522, 523, 524, 525), the preset offset angles are set to be: -1°, -0.5°, 0°, 0.5°, 1°, respectively. Figure 6 As shown, the monitoring wafer is firstly subjected to the first ion implantation, that is, when the monitoring wafer is adjusted to -1°, -0.5°, 0°, 0.5°, and 1° in sequence, ion implantation is performed on the first sub-region 511, the first sub-region 512, the first sub-region 513, the first sub-region 514, and the first sub-region 515, respectively. Then, after the monitoring wafer is rotated 180°, the monitoring wafer is subjected to the second ion implantation, that is, when the monitoring wafer is adjusted to -1°, -0.5°, 0°, 0.5°, and 1° in sequence, ion implantation is performed on the second sub-region 525, the second sub-region 524, the second sub-region 523, the second sub-region 522, and the second sub-region 521, respectively.

[0134] It should be noted that in the embodiment of the present application, the energy and dosage of the ion beam used in the entire ion implantation operation remain unchanged.

[0135] The above method adjusts the monitoring wafer to a preset offset angle, selects an area that has not been ion implanted from multiple first sub-areas of the adjusted monitoring wafer as the first target sub-area, and performs the first ion implantation on the first target sub-area, thereby achieving ion implantation at different preset offset angles on the same monitoring wafer, thereby achieving the purpose of reducing the use of monitoring wafers.

[0136] Step S303, performing thermal wave measurement on the monitoring wafer after the second ion implantation, obtaining a first thermal wave value corresponding to each first sub-region and a second thermal wave value corresponding to each second sub-region, and determining the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle.

[0137] In a specific implementation, after ion implantation is performed on all sub-regions (including the first sub-region and the second sub-region) in the monitoring wafer, thermal wave measurement is performed on the monitoring wafer to obtain multiple first thermal wave values ​​corresponding to the multiple first sub-regions and multiple second thermal wave values ​​corresponding to the multiple second sub-regions.

[0138] In one or more embodiments, the first thermal wave value and the second thermal wave value may be determined by:

[0139] Performing thermal wave measurement on the monitoring wafer to obtain a plurality of measured thermal wave values, wherein the number of the measured thermal wave values ​​is greater than or equal to the sum of the number of the first thermal wave values ​​and the number of the second thermal wave values;

[0140] For any first sub-region, if the first sub-region corresponds to multiple measured thermal wave values, the average value of the multiple measured thermal wave values ​​is used as the first thermal wave value corresponding to the first sub-region; if the first sub-region corresponds to one measured thermal wave value, the measured thermal wave value is used as the first thermal wave value corresponding to the first sub-region, and

[0141] For any second sub-region, if the second sub-region corresponds to multiple measured thermal wave values, the average value of the multiple measured thermal wave values ​​is taken as the second thermal wave value corresponding to the second sub-region; if the second sub-region corresponds to one measured thermal wave value, the measured thermal wave value is taken as the second thermal wave value corresponding to the second sub-region.

[0142] For example, Figure 5bFor example, assuming that three measured thermal wave values ​​are measured in the first sub-region 511: TW11, TW12, and TW13, then the first thermal wave value TW1 corresponding to the first sub-region 511 is equal to (TW11+TW12+TW13) / 3. The determination method of the thermal wave values ​​corresponding to other sub-regions is similar to that of the first sub-region 511, so it will not be repeated.

[0143] In an optional embodiment, the ion implantation angle may be determined by:

[0144] Determine a first fitting curve according to the first thermal wave value and the preset offset angle, and determine a second fitting curve according to the second thermal wave value and the preset offset angle;

[0145] Using the offset angle corresponding to the symmetry axis of the first fitting curve as the first ion implantation angle, and using the offset angle corresponding to the symmetry axis of the second fitting curve as the second ion implantation angle;

[0146] An average value of the first ion implantation angle and the second ion implantation angle is calculated, and the average value is used as the ion implantation angle.

[0147] Exemplarily, assuming that the monitoring wafer includes 5 first sub-regions (511, 512, 513, 514, 515) and 5 second sub-regions (521, 522, 523, 524, 525), the preset offset angles are set to be: -1°, -0.5°, 0°, 0.5°, 1°, respectively. After the ion implantation operation is performed on the monitoring wafer, the measured thermal wave values ​​are: the first thermal wave values ​​corresponding to the first sub-regions (511, 512, 513, 514, 515) are: TWa1, TWa2, TWa3, TWa4, TWa5, respectively, and the second thermal wave values ​​corresponding to the second sub-regions (521, 522, 523, 524, 525) are: TWb1, TWb2, TWb3, TWb4, TWb5, respectively;

[0148] Curve fitting is performed according to the first thermal wave values ​​(TWa1, TWa2, TWa3, TWa4, TWa5) and the preset offset angles (-1°, -0.5°, 0°, 0.5°, 1°), and the first fitting curve C1 obtained is as follows: Figure 7a As shown by Figure 7a It can be seen that the first fitting curve is a curve with the offset angle as the X-axis and the thermal wave value as the Y-axis, and the offset angle corresponding to the symmetry axis of the first fitting curve C1 is used as the first ion implantation angle Angle1;

[0149] Similarly, according to the second thermal wave values ​​(TWb1, TWb2, TWb3, TWb4, TWb5) and the preset offset angles (1°, 0.5°, 0°, -0.5°, -1°), the second fitting curve C2 is obtained as follows: Figure 7b As shown by Figure 7b It can be seen that the second fitting curve is a curve with the offset angle as the X-axis and the thermal wave value as the Y-axis, and the offset angle corresponding to the symmetry axis of the second fitting curve C2 is used as the second ion implantation angle Angle2;

[0150] Finally, the average value of the first ion implantation angle Angle1 and the second ion implantation angle Angle2 is calculated to obtain the ion implantation angle: Angle=(Angle1+Angle2) / 2.

[0151] Since the crystal orientation angles of different monitoring wafers may have a deviation of -0.1° to 0.1°, and the crystal orientation angle ε of the monitoring wafer is introduced into the first ion implantation angle Angle1, and the crystal orientation angle -ε of the monitoring wafer is introduced into the second ion implantation angle Angle2, therefore, the first ion implantation angle Angle1 and the second ion implantation angle Angle2 obtained using different monitoring wafers may have deviations. Figure 8 As shown, it is a waveform diagram of the first ion implantation angle Angle1 and a waveform diagram of the second ion implantation angle Angle2 obtained by multiple monitoring;

[0152] By calculating the average value of the first ion implantation angle Angle1 and the second ion implantation angle Angle2, the positively introduced crystal orientation angle ε and the negatively introduced crystal orientation angle -ε can be offset, eliminating the error caused by the crystal orientation angle. Figure 8 In the waveform diagram shown, the X-axis is the number of monitoring times, and the Y-axis is the ion implantation angle; it can be seen from the waveform diagram that the ion implantation angle Angle obtained by multiple monitorings provided by the method provided in the embodiment of the present application remains stable, and therefore, the ion implantation angle Angle obtained by this method has higher accuracy.

[0153] The first ion implantation angle is obtained by obtaining the symmetry axis for the multiple first thermal wave values ​​and the multiple preset offset angles, and the second ion implantation angle is obtained by obtaining the symmetry axis for the multiple second thermal wave values ​​and the multiple preset offset angles, and the average of the first ion implantation angle and the second ion implantation angle is used as the ion implantation angle. Since the crystal orientation deviations in the multiple first thermal wave values ​​and the crystal orientation deviations in the multiple second thermal wave values ​​can offset each other, the ion implantation angle determined in the above manner can reduce the influence caused by the crystal orientation deviation and improve the accuracy of the ion implantation angle.

[0154] In the ion implantation angle monitoring method provided in the embodiment of the present application, ion implantation is performed on the same monitoring wafer at different preset offset angles, and thermal wave measurement is performed on different areas of the monitoring wafer, and the ion implantation angle is determined according to the measurement results. Since only one monitoring wafer is needed in the method provided in the embodiment of the present application to achieve the purpose of monitoring the ion implantation angle, the amount of wafers used is reduced, and the measurement time required for thermal wave measurement of the wafer is also reduced. In addition, since the wafer is rotated at a first angle during the ion implantation process, the crystal orientation of the monitoring wafer during the first ion implantation and the crystal orientation of the monitoring wafer during the second ion implantation can be offset during the ion implantation angle calculation process, thereby reducing the influence of the crystal orientation deviation, improving the accuracy of the ion implantation angle, and further improving the working efficiency of the semiconductor machine used for ion implantation.

[0155] Based on the same concept, an embodiment of the present application also provides a device for monitoring the ion implantation angle. Since the device is the device in the method in the embodiment of the present application, and the principle of solving the problem by the device is similar to that of the method, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0156] like Fig. 9 As shown, the above device includes the following modules:

[0157] The region defining module 901 is used to provide a monitoring wafer, define a first region and a second region on the monitoring wafer, define a plurality of first sub-regions in the first region, and define a plurality of second sub-regions in the second region;

[0158] The ion implantation module 902 is used to sequentially perform a first ion implantation on a plurality of first sub-regions according to a plurality of preset offset angles, and after rotating the monitoring wafer after the first ion implantation by a first angle, sequentially perform a second ion implantation on a plurality of second sub-regions according to a plurality of preset offset angles;

[0159] The angle determination module 903 is used to perform thermal wave measurement on the monitoring wafer after the second ion implantation, obtain a first thermal wave value corresponding to each first sub-region, and a second thermal wave value corresponding to each second sub-region, and determine the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle.

[0160] In an optional embodiment, the ion implantation module 902 is specifically used for:

[0161] For any of the multiple preset offset angles, do the following:

[0162] Adjusting the monitoring wafer to a preset offset angle;

[0163] Selecting a first target sub-region from a plurality of first sub-regions of the adjusted monitoring wafer, wherein the first target sub-region is a region where the first ion implantation is not performed;

[0164] A first ion implantation is performed on the first target sub-region.

[0165] In an optional implementation manner, the angle determination module 903 is specifically configured to:

[0166] Determine a first fitting curve according to the first thermal wave value and the preset offset angle, and determine a second fitting curve according to the second thermal wave value and the preset offset angle;

[0167] Using the offset angle corresponding to the symmetry axis of the first fitting curve as the first ion implantation angle, and using the offset angle corresponding to the symmetry axis of the second fitting curve as the second ion implantation angle;

[0168] An average value of the first ion implantation angle and the second ion implantation angle is calculated, and the average value is used as the ion implantation angle.

[0169] In an optional embodiment, the first area and the second area are symmetrically arranged on both sides of the distribution symmetry axis, wherein the distribution symmetry axis is any straight line passing through the center point of the monitoring wafer.

[0170] In an optional implementation, the number of the first sub-regions is equal to the number of the second sub-regions, or the number of the first sub-regions is not equal to the number of the second sub-regions.

[0171] In an optional implementation, the multiple preset offset angles are multiple offset angles that are symmetrically distributed according to a preset reference offset angle.

[0172] Based on the same concept, the embodiment of the present application also provides a semiconductor machine, the principle of solving the problem of the semiconductor machine is similar to that of the aforementioned ion implantation angle monitoring device, so the implementation of the semiconductor machine can refer to the implementation of the aforementioned ion implantation angle monitoring device, and the repeated parts will not be repeated.

[0173] like Fig.10 As shown, the semiconductor machine 100 includes an ion generating device 1001 and an ion implantation angle monitoring device 1002, wherein the ion generating device 1001 is used to generate an ion beam for ion implantation into a wafer;

[0174] The ion implantation angle monitoring device 1002 is used to perform the following operations:

[0175] Providing a monitoring wafer, defining a first region and a second region on the monitoring wafer, defining a plurality of first sub-regions in the first region, and defining a plurality of second sub-regions in the second region;

[0176] According to a plurality of preset offset angles, a first ion implantation is sequentially performed on a plurality of first sub-regions, and after the monitoring wafer after the first ion implantation is rotated by a first angle, a second ion implantation is sequentially performed on a plurality of second sub-regions according to a plurality of preset offset angles;

[0177] Thermal wave measurement is performed on the monitoring wafer after the second ion implantation to obtain a first thermal wave value corresponding to each first sub-region and a second thermal wave value corresponding to each second sub-region, and the ion implantation angle is determined according to the first thermal wave value, the second thermal wave value and the preset offset angle.

[0178] It should be noted that other essential components of the semiconductor machine are well understood by those skilled in the art and will not be described in detail herein and should not be construed as limiting the present application.

[0179] In some possible embodiments, various aspects of the present application can also be implemented in the form of a program product, which includes a program code. When the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps of each module in the ion implantation angle monitoring device according to various exemplary embodiments of the present disclosure described in the above "Exemplary Method" section of this specification, for example, providing a monitoring wafer, defining a first area and a second area on the monitoring wafer, defining a plurality of first sub-areas in the first area, and defining a plurality of second sub-areas in the second area; performing a first ion implantation in the plurality of first sub-areas in sequence according to a plurality of preset offset angles, and rotating the monitoring wafer after the first ion implantation by a first angle, and then performing a second ion implantation in the plurality of second sub-areas in sequence according to a plurality of preset offset angles; performing thermal wave measurement on the monitoring wafer after the second ion implantation to obtain a first thermal wave value corresponding to each first sub-area and a second thermal wave value corresponding to each second sub-area, and determining the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle.

[0180] like Fig.11 As shown, a program product 110 of a method for monitoring an ion implantation angle according to an embodiment of the present application is described, which can be in a portable compact disk read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present application is not limited thereto, and in this document, a readable storage medium can be any tangible medium containing or storing a program, which can be used by or in combination with an instruction execution system, apparatus, or device.

[0181] The present application is described above with reference to block diagrams and / or flowcharts of methods, apparatuses (systems) and / or computer program products according to embodiments of the present application. It should be understood that one block of the block diagrams and / or flowcharts, as well as combinations of blocks in the block diagrams and / or flowcharts, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, and / or other programmable data processing devices to produce a machine, such that the instructions executed via the computer processor and / or other programmable data processing devices create a method for implementing the functions / actions specified in the block diagrams and / or flowchart blocks.

[0182] Accordingly, the present application can also be implemented by hardware and / or software (including firmware, resident software, microcode, etc.). Further, the present application can take the form of a computer program product on a computer-usable or computer-readable storage medium, which has computer-usable or computer-readable program code implemented in the medium for use by or in connection with an instruction execution system. In the context of the present application, a computer-usable or computer-readable medium can be any medium that can contain, store, communicate, transmit, or transport a program for use by or in connection with an instruction execution system, apparatus, or device.

[0183] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application is also intended to include these changes and modifications.

Claims

1. A method for monitoring ion implantation angle, It is characterized in that include: Providing a monitoring wafer, defining a first region and a second region on the monitoring wafer, defining a plurality of first sub-regions in the first region, and defining a plurality of second sub-regions in the second region; According to a plurality of preset offset angles, sequentially perform a first ion implantation on the plurality of first sub-regions, and after rotating the monitoring wafer after the first ion implantation by a first angle, sequentially perform a second ion implantation on the plurality of second sub-regions according to the plurality of preset offset angles; Thermal wave measurement is performed on the monitoring wafer after the second ion implantation to obtain a first thermal wave value corresponding to each of the first sub-regions and a second thermal wave value corresponding to each of the second sub-regions, and the ion implantation angle is determined based on the first thermal wave value, the second thermal wave value and the preset offset angle.

2. The method according to claim 1, It is characterized in that The step of sequentially performing a first ion implantation on the plurality of first sub-regions according to the plurality of preset offset angles comprises: For any one of the plurality of preset offset angles, perform the following operations: Adjusting the monitoring wafer to the preset offset angle; Selecting a first target sub-region from the plurality of first sub-regions of the adjusted monitoring wafer, wherein the first target sub-region is a region where the first ion implantation is not performed; A first ion implantation is performed on the first target sub-region.

3. The method according to claim 1, It is characterized in that The step of determining the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle comprises: Determine a first fitting curve according to the first thermal wave value and the preset offset angle, and determine a second fitting curve according to the second thermal wave value and the preset offset angle; Using the offset angle corresponding to the symmetry axis of the first fitting curve as a first ion implantation angle, and using the offset angle corresponding to the symmetry axis of the second fitting curve as a second ion implantation angle; An average value of the first ion implantation angle and the second ion implantation angle is calculated, and the average value is used as the ion implantation angle.

4. The method according to claim 1, It is characterized in that The first angle is 180°.

5. The method according to any one of claims 1 to 4, It is characterized in that The first area and the second area are symmetrically arranged on both sides of a distribution symmetry axis, wherein the distribution symmetry axis is any straight line passing through the center point of the monitoring wafer.

6. The method according to any one of claims 1 to 4, It is characterized in that The number of the first sub-regions is equal to the number of the second sub-regions, or the number of the first sub-regions is not equal to the number of the second sub-regions.

7. The method according to any one of claims 1 to 4, It is characterized in that The plurality of preset offset angles are a plurality of offset angles symmetrically distributed according to a preset reference offset angle.

8. A computer-readable storage medium, It is characterized in that The computer-readable storage medium stores computer instructions, and when the computer instructions are executed on a computer, the computer is caused to execute the steps of the method for monitoring the ion implantation angle according to any one of claims 1 to 7.

9. A device for monitoring ion implantation angle, It is characterized in that include: An area defining module, used for defining a first area and a second area on the monitoring wafer, defining a plurality of first sub-areas in the first area, and defining a plurality of second sub-areas in the second area; An ion implantation module, configured to sequentially perform a first ion implantation on the plurality of first sub-regions according to a plurality of preset offset angles, and after rotating the monitoring wafer after the first ion implantation by a first angle, sequentially perform a second ion implantation on the plurality of second sub-regions according to the plurality of preset offset angles; An angle determination module is used to perform thermal wave measurement on the monitoring wafer after the second ion implantation, obtain a first thermal wave value corresponding to each of the first sub-regions, and a second thermal wave value corresponding to each of the second sub-regions, and determine the ion implantation angle according to the first thermal wave value, the second thermal wave value and the preset offset angle.

10. A semiconductor machine, It is characterized in that The invention comprises an ion generating device and an ion implantation angle monitoring device as claimed in claim 9, wherein the ion generating device is used to generate an ion beam for ion implantation into a wafer.

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