Optical package structure

Abstract

An optical package structure is provided. The optical package structure includes a first substrate, a second substrate, a first optical component, a second optical component, and an electrical shielding element. The second substrate is over the first substrate. The first substrate and the second substrate together define a first cavity. The first optical component is disposed in the first cavity. The second optical component is disposed over the first substrate. The electrical shielding element is disposed adjacent to a sidewall of the first cavity and between the first optical component and the second optical component.

Description

Technical Field

[0001] The present disclosure generally relates to an optical package structure. Background Art

[0002] Liquid crystal polymer (LCP) covers can be used for optical shielding between the transmitter and receiver of an optical package structure, and the transmitter is usually electrically connected to the substrate of the optical package structure through bonding wires. However, the LCP cover usually has a relatively large thickness, and the loop height of the bonding wire may increase the overall thickness of the optical package structure. Summary of the invention

[0003] In one or more configurations, the optical packaging structure includes a first substrate, a second substrate, a first optical component, a second optical component, and an electrical shielding element. The second substrate is above the first substrate. The first substrate and the second substrate together define a first cavity. The first optical component is disposed in the first cavity. The second optical component is disposed above the first substrate. The electrical shielding element is disposed adjacent to a sidewall of the first cavity and between the first optical component and the second optical component.

[0004] In one or more configurations, an optical packaging structure includes a first substrate, a second substrate, an adhesive layer, and a shielding structure. The first substrate includes a first circuit structure. The second substrate includes a second circuit structure. The adhesive layer is between the first substrate and the second substrate. The shielding structure is at least partially encapsulated by the adhesive layer and is configured to reduce electromagnetic interference between the first circuit structure and the second circuit structure.

[0005] In one or more configurations, an optical packaging structure includes a substrate structure, an optical receiver, and a confinement structure. The optical receiver is above the substrate structure. The confinement structure is above the substrate structure and is configured to reduce first light reflected from the confinement structure to the optical receiver. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects of the present disclosure are better understood from the following detailed description when read in light of the accompanying drawings.It should be noted that various features may not be drawn to scale and that the sizes of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0008] Figure 1B is a top view of an optical packaging structure according to some configurations of the present disclosure.

[0009] Figure 1C is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0010] Figure 1D is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0011] Figure 2A is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0012] Figure 2B is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0013] Figure 2C is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0014] Figure 3A is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0015] Figure 3B is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0016] Figure 3C is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0017] Figure 4A is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0018] Figure 4B is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0019] Figure 4C is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0020] Figure 4D is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0021] Figure 4E is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0022] Figure 4F is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0023] Figure 5A is a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0024] Figure 5B is a top view of an optical packaging structure according to some configurations of the present disclosure.

[0025] Figure 5Cis a cross-section of an optical packaging structure according to some configurations of the present disclosure.

[0026] Figure 5D is a top view of an optical packaging structure according to some configurations of the present disclosure.

[0027] Fig. 6A , Figure 6B , Figure 6C , Fig.6D , Fig. 6E , Fig. 6F , Figure 6G , Figure 6H , Fig.6I and Figure 6J Various stages of an exemplary method for manufacturing an optical package structure according to some configurations of the present disclosure are shown.

[0028] Fig. 7A , Figure 7B , Figure 7C , Fig.7D , Fig. 7E , Figure 7F , Figure 7G , Figure 7H , Fig.7I , Figure 7J and Figure 7K Various stages of an exemplary method for manufacturing an optical package structure according to some configurations of the present disclosure are shown.

[0029] Fig. 8A , Figure 8B , Figure 8C , Fig.8D and Fig. 8E Various stages of an exemplary method for manufacturing an optical package structure according to some configurations of the present disclosure are shown.

[0030] Common reference numbers are used throughout the drawings and detailed description to refer to the same or like elements. DETAILED DESCRIPTION

[0031] Figure 1A is a cross-section of an optical packaging structure 1A according to some configurations of the present disclosure. Figure 1B is a top view of an optical package structure 1A according to some configurations of the present disclosure. In some configurations, Figure 1A It is along Figure 1B The optical package structure 1A may include substrates 10 and 20, optical components, a shielding structure, an adhesive layer 60, a barrier 70, protective layers 80, 81 and 82, and a conductor (eg, a conductive line 90).

[0032] Substrates 10 and 20 may independently include, for example, printed circuit boards, such as paper copper foil laminates, composite copper foil laminates, or polymer-impregnated fiberglass copper foil laminates. Substrates 10 and 20 may independently include interconnect structures, which may include, for example, multiple conductive traces and / or multiple conductive vias. The interconnect structure may include a redistribution layer (RDL) and / or a grounding element. In some configurations, substrates 10 and 20 may independently include an organic substrate or a lead frame. In some configurations, substrates 10 and 20 may independently include a ceramic material or a metal plate. In some configurations, substrates 10 and 20 may independently include a two-layer substrate, which includes a core layer and conductive materials and / or structures disposed on the upper surface (or top surface) and lower surface (or bottom surface) of the substrate. Substrates 10 and 20 may independently include semiconductor wafers or electronic components. The electronic component may be a chip or die containing a semiconductor substrate, one or more integrated circuit devices, and one or more overlying interconnect structures. Integrated circuit devices may include active devices such as transistors, and / or passive devices such as resistors, capacitors, inductors, or combinations thereof.Substrates 10 and 20 may independently include one or more conductive elements, surfaces, contacts, or pads.

[0033] In some configurations, the substrate 10 includes a base layer 10A and a circuit structure 10R. The base layer 10A may be or include a semiconductor layer or a dielectric layer. In some configurations, the circuit structure 10R includes a plurality of conductive layers (e.g., conductive layers 110, 101, 102, 103, 101A, 102A, 103A, and 10g) and a plurality of conductive vias (e.g., conductive vias 10V1, 10V2, 10V3, and 10V4) electrically connected to the corresponding conductive layers. In some configurations, the conductive vias 10V1, 10V2, 10V3, and 10V4 penetrate the base layer 10A. In some configurations, the conductive vias 10V1, 10V2, 10V3, and 10V4 gradually narrow toward the substrate 20. In some configurations, the conductive layer 10g may serve as a grounding element or be connected to a grounding element.

[0034] In some configurations, substrate 20 is disposed above substrate 10. In some configurations, substrate 20 is electrically connected to substrate 10. In some configurations, substrates 10 and 20 together define a cavity C1 (also referred to as a "recess" or "space"). Cavity C1 can accommodate one or more optical components. In some configurations, conductive layer 110 (or top surface 111 of substrate 10) is exposed to cavity C1. In some configurations, substrate 20 includes cavity C1. In some configurations, substrate 20 further includes or defines cavity C2 (also referred to as a "recess" or "space"). Cavity C2 can accommodate one or more optical components. In some configurations, substrate 20 includes base layer 20A and circuit structure 20R. Base layer 20A can be or include a semiconductor layer or a dielectric layer. In some configurations, the circuit structure 20R includes a plurality of conductive layers (e.g., conductive layers 210, 220, 230, 210A, 220A, and 230A) and a plurality of conductive vias (e.g., conductive vias 20V1, 20V2, and 20V3) electrically connected to the corresponding conductive layers. In some configurations, the conductive vias 20V1, 20V2, and 20V3 penetrate the base layer 20A. In some configurations, the conductive layers 210 and 220 are exposed to the cavity C2. In some configurations, the circuit structure 20R is disposed above the circuit structure 10R. The substrate 20 may have a surface 201 (also referred to as A "top surface"), a surface 202 opposite to the surface 201, and surfaces 203 and 204 (also referred to as "lateral surfaces") extending between the surface 201 and the surface 202.

[0035] In some configurations, the conductive layer, pad or contact may independently include a conductive material such as a metal or a metal alloy. Examples include gold (Au), silver (Ag), aluminum (Al), copper (Cu) or their alloys. The dielectric layer may independently include an organic material, a solder resist, PI, ABF, one or more molding compounds, one or more pre-impregnated composite fibers (e.g., prepreg materials), borophosphosilicate glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, undoped silicate glass (USG), any combination thereof, etc. In some configurations, substrate 10 is referred to as the substrate structure of the optical packaging structure 1A. In some configurations, substrates 10 and 20 construct the substrate structure of the optical packaging structure 1A.

[0036] The optical emitter 30 (also referred to as an "optical emitting device" or "light emitting device") may be embedded in the substrate structure. In some configurations, the optical emitter 30 is disposed in the cavity C1. In some configurations, the optical emitter 30 is electrically connected to the substrate 10. In some configurations, the optical emitter 30 is disposed on the circuit structure 10R. In some configurations, the optical emitter 30 is electrically connected to the circuit structure 10R. In some configurations, the optical emitter 30 is electrically connected to the substrate 20. In some configurations, the optical emitter 30 is wire-bonded to the substrate 20. In some configurations, a conductor (e.g., a conductive wire 90) is directly connected to the optical emitter 30 and the substrate 20. In some configurations, the optical emitter 30 has a surface 301 (also referred to as a "top surface") and a surface 302 opposite to the surface 301. In some configurations, the surface 301 is electrically connected to the conductive layer 230 through the conductive wire 90 (or conductor), and the surface 302 is electrically connected to the conductive layer 110. In some configurations, the optical emitter 30 includes two electrodes 310 and 320 on opposite surfaces (e.g., surfaces 301 and 302) electrically connected to the conductive layer 110 and the conductive layer 230, respectively. In some configurations, the electrode 310 is electrically connected to the conductive layer 110A through the conductive layer 110 and the conductive via 10V1. In some configurations, the electrode 320 is electrically connected to the substrate 10 through the conductive wire 90, the conductive layer 230, the conductive via 20V3, and the conductive layer 230A. In some configurations, the electrode 320 is electrically connected to the conductive layer 103A through the conductive wire 90, the substrate 20, the conductive via 230V, the conductive layer 103, and the conductive via 10V2.

[0037] The optical receiver 40 (also referred to as an "optical receiving device" or "light receiving device") may be disposed above the substrate structure. In some configurations, the optical receiver 40 is disposed above the substrate 10. In some configurations, the optical receiver 40 is disposed in the cavity C2. In some configurations, the optical receiver 40 is electrically connected to the substrate 20. In some configurations, the optical receiver 40 is disposed on the circuit structure 20R. In some configurations, the optical receiver 40 is electrically connected to the circuit structure 20R. In some configurations, the optical receiver 40 is flip-chip bonded to the substrate 20. In some configurations, the optical receiver 40 has a surface 401 (also referred to as a "top surface") and a surface 402 opposite to the surface 401. In some configurations, the surface 302 is electrically connected to the conductive layers 210 and 220. In some configurations, the optical receiver 40 includes two electrodes 410 and 420 on the surface 402 that are electrically connected to the conductive layers 210 and 220, respectively. In some configurations, the electrode 410 is electrically connected to the conductive layer 101A through the conductive layer 210, the conductive via 20V1, the conductive layer 210A, the conductive via 210V, the conductive layer 101, and the conductive via 10V3. In some configurations, the electrode 420 is electrically connected to the conductive layer 102A through the conductive layer 220, the conductive via 20V2, the conductive layer 220A, the conductive via 220V, the conductive layer 102, and the conductive via 10V4. In some configurations, the elevation of the optical receiver 40 is higher than the elevation of the optical transmitter 30 relative to the substrate 10. In some configurations, the surface 401 (or top surface) of the optical receiver 40 is higher than the elevation of the top portion of the cavity C1 relative to the substrate 10.

[0038] In some configurations, the shielding structure may be configured to reduce electromagnetic interference between the circuit structure 10R and the circuit structure 20R. In some configurations, the shielding structure may include a portion between the optical transmitter 30 and the optical receiver 40 and configured to reduce optical interference therebetween. In some configurations, the shielding structure may further include a connection portion extending into the substrate 10 and electrically connected to a ground element of the substrate 10. In some configurations, the shielding structure may include an electrical shielding element 50, a connection portion 50R (also referred to as a "connection element"), and a via portion 50V (also referred to as a "conductive via"). In some configurations, the shielding structure is at least partially encapsulated by an adhesive layer 60. In some configurations, the shielding structure may include a conductive material, such as a metallic material. Examples may include aluminum (Al), copper (Cu), chromium (Cr), tin (Sn), gold (Au), silver (Ag), nickel (Ni), or stainless steel, or a mixture, alloy, or other combination thereof.

[0039] In some configurations, the electric shielding element 50 includes a portion 510 (also referred to as a "vertical portion") and a portion 520 (also referred to as a "horizontal portion"). In some configurations, the electric shielding element 50 (or portion 510) is disposed between the optical transmitter 30 and the optical receiver 40. In some configurations, the portion 510 is configured to reduce light interference between the optical transmitter 30 and the optical receiver 40. In some configurations, the portion 510 is referred to as a blocking structure, which is disposed adjacent to the cavity C1 and is configured to reflect light from the optical transmitter 30. In some configurations, the electric shielding element 50 (or portion 510) is disposed adjacent to the sidewall 205 of the cavity C1. In some configurations, the electric shielding element 50 (or portion 510) covers the sidewall 205 of the cavity C1. In some configurations, the electric shielding element 50 (or portion 510) extends along the sidewall 205 of the cavity C1. In some configurations, the electric shielding element 50 (or portion 510) extends along the sidewall 205 to the end portion of the substrate 20 facing the substrate 10 (e.g., the surface 202). In some configurations, the portion 510 further includes a vertical portion 512 and an extension 511. In some configurations, the extension 511 partially covers the surface 201 of the substrate 20. In some configurations, the vertical portion 512 covers the sidewall 205 of the cavity C1. In some configurations, see Figure 1B , the electric shielding element 50 (or the portion 510 ) surrounds the optical emitter 30 . In some configurations, the conductive layer 110 is exposed to the cavity C1 and is spaced apart from the electric shielding element 50 .

[0040] In some configurations, the electric shield element 50 (or portion 520) is between the circuit structure 10R and the circuit structure 20R. In some configurations, the circuit structure 20R at least partially vertically overlaps the portion 520 of the shield structure. In some configurations, the portion 520 is disposed on the surface 202 of the substrate 20. In some configurations, the portion 520 includes multiple horizontal portions between the conductive layers 210A, 220A, and 230A.

[0041] In some configurations, the connecting portion 50R (or connecting element) electrically connects the electric shielding element 50 to the grounding element (e.g., the conductive layer 10g). In some configurations, the portion 510 is electrically connected to the grounding element (e.g., the conductive layer 10g) through the connecting portion 50R. In some configurations, the connecting portion 50R includes a conductive via 510V and a conductive layer 105. The portion 510 is electrically connected to the grounding element (e.g., the conductive layer 10g) through the conductive via 510V and the conductive layer 105.

[0042] In some configurations, the via portion 50V (or conductive via) is disposed or formed in the substrate 10 and electrically connects the connection portion 50R to a ground element (e.g., conductive layer 10g). In some configurations, the via portion 50V extends into the substrate 10 and electrically connects to a ground element (e.g., conductive layer 10g). In some configurations, the via portion 50V penetrates the base layer 10A of the substrate 10. In some configurations, the via portion 50V gradually narrows toward the substrate 20.

[0043] The adhesive layer 60 may be between the substrate 10 and the substrate 20. In some configurations, the adhesive layer 60 is configured to adhere the substrate 10 and the substrate 20. In some configurations, the adhesive layer 60 encapsulates the portion 520 and the connecting portion 50R. In some configurations, the adhesive layer 60 encapsulates the portion 520, the conductive via 510V, and the conductive layer 105. In some configurations, the adhesive layer 60 directly contacts the electric shielding element 50 (or portion 520). In some configurations, the adhesive layer 60 directly contacts the portion 520, the conductive via 510V, and the conductive layer 105. In some configurations, the adhesive layer 60 at least partially encapsulates the conductive layers 110, 102, 103, and 104 of the circuit structure 10R. In some configurations, the adhesive layer 60 directly contacts the conductive layers 110, 102, 103, and 104 of the circuit structure 10R. In some configurations, the adhesive layer 60 at least partially encapsulates the conductive layers 210A, 220A, and 230A of the circuit structure 20R. In some configurations, the adhesive layer 60 directly contacts the conductive layers 210A, 220A, and 230A of the circuit structure 20R. In some configurations, the adhesive layer 60 is spaced apart from the cavity C1. In some configurations, the conductive layer 110 is exposed to the cavity C1 and is spaced apart from the electric shield element 50 by the adhesive layer 60.

[0044] The barrier 70 may be disposed above the substrate structure. The barrier 70 may be or include a limiting structure configured to define a reception range of an optical signal received by the optical receiver 40. In some configurations, the limiting structure (or barrier 70) is above the substrate structure (e.g., substrate 10 or a combination of substrates 10 and 20) and is configured to reduce light reflected from the limiting structure to the optical receiver 40. In some configurations, the portion 510 (or blocking structure) is disposed adjacent to the cavity C1 and is configured to reflect light from the optical emitter 30. In some configurations, the portion 510 (or blocking structure) and the barrier 70 (or limiting structure) are disposed between the optical emitter 30 and the optical receiver 40. In some configurations, the barrier 70 is formed of or includes an optical blocking material or a light absorbing material. In some configurations, the barrier 70 has an optical transmittance (or light transmittance) of no more than about 10%, 5%, 3%, or 1% relative to the peak wavelength or wavelength range of the optical signal (light) emitted by the optical emitter 30. In some configurations, the barrier 70 has an optical transmittance (or light transmittance) of no more than about 10%, 5%, 3%, or 1% relative to the peak wavelength or wavelength range of the optical signal (light) received by the optical receiver 40. The barrier 70 may be referred to as a light blocking structure. In some configurations, at least a portion of the barrier 70 (or light blocking structure) is above the substrate 20 and between the optical emitter 30 and the optical receiver 40. In some configurations, the barrier 70 includes through holes C3 and C4. In some configurations, the through hole C3 is above the optical emitter 30 and is wider than the cavity C1. In some configurations, the through hole C4 is above the optical receiver 40. In some configurations, the roughness (e.g., surface roughness) of the sidewall 705 of the through hole C3 is greater than the roughness (e.g., surface roughness) of the top surface 701 of the barrier 70. In some configurations, the roughness (e.g., surface roughness) of the sidewall 707 of the through hole C4 is greater than the roughness (e.g., surface roughness) of the top surface 701 of the barrier 70. In some configurations, the barrier 70 is or includes a core substrate layer (e.g., a black core layer). In some configurations, the barrier 70 includes a resin layer. In some configurations, the barrier 70 is substantially free of glass fiber. In some configurations, the barrier 70 may be omitted depending on the thickness (or height) of the optical receiver 40. In some configurations, the barrier 70 may be omitted when the optical receiver 40 is substantially fully received in the cavity C2.

[0045] The protective layer 80 may be between the substrate 10 and the substrate 20. In some configurations, the protective layer 80 is partially exposed to the cavity C1. In some configurations, the conductive layer 110 is spaced apart from the electric shielding element 50 by the protective layer 80. In some configurations, the protective layer 80 directly contacts the conductive layer 110 and the electric shielding element 50. In some configurations, the protective layer 80 directly contacts the adhesive layer 60. The protective layer 80 may be or include a solder mask. In some configurations, the conductive layer 110 is exposed to the cavity C1 and is spaced apart from the electric shielding element 50 by the protective layer 80.

[0046] The protective layer 81 may be between the barrier rib 70 and the substrate 20. The protective layer 82 may partially cover the conductive layers 10g, 110A, 101A, 102A, and 103A. The protective layers 81 and 82 may be or include solder masks.

[0047] According to some configurations of the present disclosure, the optical transmitter is disposed in a cavity defined by the stacked substrate, and the electrical shielding element is adjacent to the side wall of the cavity and between the optical transmitter and the optical receiver. Therefore, crosstalk between the optical transmitter and the optical receiver can be effectively prevented by the electrical shielding element. In addition, by reducing the elevation of the optical transmitter relative to the substrate or the optical receiver without thinning the optical transmitter, the loop height of the conductive wire that joins the optical transmitter to the substrate can be reduced. Therefore, the overall thickness of the optical packaging structure can be reduced, and the processing risk of thinning the optical transmitter can be avoided, which is conducive to increasing the yield.

[0048] In addition, according to some configurations of the present disclosure, the electric shielding element surrounds the optical transmitter, thereby improving the optical shielding effect between the optical transmitter and the optical receiver.

[0049] Furthermore, according to some configurations of the present disclosure, the horizontal portion of the electric shielding element is disposed between the circuit structure connected to the optical transmitter and the circuit structure connected to the optical receiver. Therefore, interference between the connected circuit structures can be effectively reduced.

[0050] In addition, according to some configurations of the present disclosure, a cavity is formed in the substrate without damaging, partially removing, or cutting through the conductive structure (e.g., conductive layer, conductive via, and the like) of the circuit structure of the substrate. Therefore, even if the optical transmitter and the optical receiver are placed in the cavity of the substrate, the electric shielding element is not damaged, the coverage of the electric shielding element is not reduced, and the original design of the circuit structure is not damaged or changed. Therefore, the interference between the connected circuit structures can be effectively reduced by the electric shielding element, and the size of the optical packaging structure can be significantly reduced.

[0051] In addition, in some cases, a barrier for an optical packaging structure may be formed by the following method: a liquid crystal polymer (LCP) material is injected into a mold having a predetermined shape, the LCP material is cured, and the mold is removed from the cured LCP material to form a barrier having a predetermined shape. Due to the processing limit of the above method and the properties of the LCP material, the size of the barrier formed is relatively large, resulting in an increase in the thickness of the optical packaging structure. In contrast, according to some configurations of the present disclosure, the barrier is or includes a black core layer having a through hole formed by drilling. Therefore, the black core layer can be formed with a relatively small thickness, for example, less than about 200 μm or less, and thus the overall thickness of the optical packaging structure can be further reduced, which is conducive to reducing the size of the optical packaging structure. In addition, the barrier (or limiting structure) may be formed by or include a black core layer, which absorbs light instead of reflecting light, and thus the light reflected by the barrier to the optical receiver can be reduced. In addition, due to the relatively large roughness of the sidewalls of the barrier (or limiting structure) generated by the drilling operation for forming the through hole, the light reflected by the barrier may be scattered toward the outside of the cavity, and thus the light reflected by the barrier to the optical receiver may be further reduced. In addition, the barrier may not contain glass fibers. Therefore, the light leakage generated by the glass fibers may be further prevented.

[0052] In addition, according to some configurations of the present disclosure, the optical receiver is disposed above the stacked substrate and at least partially within the cavity, and the optical receiver is further flip-chip bonded to the substrate rather than wire-bonded to the substrate. Therefore, relative to the substrate, the optical receiver at an elevation higher than the elevation of the optical transmitter can receive a relatively large amount of optical signals, and the overall thickness of the optical packaging structure can also be further reduced.

[0053] Figure 1C is a cross-section of an optical packaging structure 1C according to some configurations of the present disclosure. Figure 1C The optical packaging structure 1C shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0054] In some configurations, the connection portion 50R and the through-hole portion 50V of the shield structure are between the optical transmitter 30 and the optical receiver 40. In some configurations, the portion of the circuit structure 20R connected to the optical transmitter 30 and the portion of the circuit structure 20R connected to the optical receiver 40 are disposed on opposite sides of the electrical shield element 50 (or portion 510). In some configurations, the portion of the circuit structure 10R connected to the optical transmitter 30 and the portion of the circuit structure 10R connected to the optical receiver 40 are disposed on opposite sides of the connection portion 50R and the through-hole portion 50V.

[0055] According to some configurations of the present disclosure, through the configuration of the electric shielding element 50, the connecting portion 50R and the through-hole portion 50V, crosstalk between the optical transmitter and the optical receiver can be effectively prevented, and interference between the circuit connected to the optical transmitter and the circuit connected to the optical receiver can also be effectively reduced.

[0056] Figure 1D is a cross-section of an optical packaging structure 1D according to some configurations of the present disclosure. Figure 1D The optical packaging structure 1D shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0057] In some configurations, the optical receiver 40 includes two electrodes 410 and 420 on opposite surfaces (eg, surfaces 401 and 402) electrically connected to the conductive layers 210 and 220, respectively. In some configurations, the electrode 420 is electrically connected to the conductive layer 220 through the conductive wire 92.

[0058] Figure 2A is a cross-section of an optical packaging structure 2A according to some configurations of the present disclosure. Figure 2A The optical packaging structure 2A shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0059] In some configurations, the circuit structure 20R of the substrate 20 includes conductive layers 210, 220, 230, 211, 221, 210A, 220A, and 230A and conductive vias 20V1, 20V2, 20V1a, 20V2a, and 20V3. In some configurations, the conductive layers 210 and 220 are disposed on the surface 201. In some configurations, the electrode 410 is electrically connected to the conductive layer 101A through the conductive layer 210, the conductive via 20V1, the conductive layer 211, the conductive via 20V1a, the conductive layer 210A, the conductive via 210V, the conductive layer 101, and the conductive via 10V3. In some configurations, electrode 420 is electrically connected to conductive layer 102A through conductive layer 220, conductive via 20V2, conductive layer 221, conductive via 20V2a, conductive layer 220A, conductive via 220V, conductive layer 102, and conductive via 10V4. In some configurations, substrate 20 does not include Figure 1A Cavity C2 is shown.

[0060] Figure 2B is a cross-section of an optical packaging structure according to some configurations of the present disclosure. Figure 2B The optical package structure 2B shown in FIG. 2B may be similar to Figure 2A The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0061] In some configurations, the electrodes 420 of the optical receiver 40 are electrically connected to the conductive layer 220 via the conductive wires 92 .

[0062] Figure 2C is a cross-section of an optical packaging structure 2C according to some configurations of the present disclosure. Figure 2C The optical package structure 2C shown in FIG. 2C may be similar to Figure 2A The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0063] In some configurations, the conductive layers and conductive vias of substrate 20 that connect conductive layers 210 and 220 to substrate 10 are similar to those in Figure 2A Those shown in Figure 2C In some configurations, the circuit structure 20R of the substrate 20 includes conductive layers 230, 231, and 230A and conductive vias 20V3 and 20V3a. In some configurations, the electrode 320 is electrically connected to the substrate 10 through the conductive wire 90, the conductive layer 230, the conductive via 20V3, the conductive layer 231, the conductive via 20V3a, and the conductive layer 230A.

[0064] In some configurations, the connection portion 50R and the via portion 50V of the shield structure are between the optical transmitter 30 and the optical receiver 40 .

[0065] Figure 3A is a cross-section of an optical packaging structure according to some configurations of the present disclosure. Figure 3A The optical package structure 3A shown in FIG. 3 may be similar to Figure 2B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0066] In some configurations, the optical package structure 3A includes optical emitters 30 and 30' and conductive lines 90 and 90'. In some configurations, the circuit structure 10R of the substrate 10 further includes conductive layers 110', 110A', 103' and 103A' and conductive vias 10V1' and 10V2'. In some configurations, the circuit structure 20R of the substrate 20 further includes conductive layers 230' and 230A' and conductive vias 20V3'.

[0067] In some configurations, the optical emitter 30' includes two electrodes 310' and 320' on opposite surfaces (e.g., surfaces 301' and 302') that are electrically connected to the conductive layer 110' and the conductive layer 230', respectively. In some configurations, the electrode 310 is electrically connected to the conductive layer 110A' through the conductive layer 110' and the conductive via 10V1'. In some configurations, the electrode 320' is electrically connected to the substrate 10 through the conductive wire 90', the conductive layer 230', the conductive via 20V3', and the conductive layer 230A'. In some configurations, the electrode 320' is electrically connected to the conductive layer 103A' through the conductive wire 90', the substrate 20, the conductive via 230V', the conductive layer 103', and the conductive via 10V2'.

[0068] Figure 3B is a cross-section of an optical packaging structure 3B according to some configurations of the present disclosure. Figure 3B The optical package structure 3B shown in FIG. 3B may be similar to Figure 3A The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0069] In some configurations, the optical package structure 3B includes optical receivers 40 and 40' and conductive lines 92 and 92'. In some configurations, the circuit structure 10R of the substrate 10 further includes conductive layers 101', 101A', 102' and 102A' and conductive vias 10V3' and 10V4'. In some configurations, the circuit structure 20R of the substrate 20 further includes conductive layers 210', 220', 211', 221', 210A' and 220A' and conductive vias 20V1', 20V2', 20V1a' and 20V2a'.

[0070] In some configurations, the optical receiver 40' includes electrodes 410' and 420'. In some configurations, the electrode 410' is electrically connected to the conductive layer 101A' through the conductive layer 210', the conductive via 20V1', the conductive layer 211', the conductive via 20V1a', the conductive layer 210A', the conductive via 210V', the conductive layer 101', and the conductive via 10V3'. In some configurations, the electrode 420' is electrically connected to the conductive layer 102A' through the conductive layer 220', the conductive via 20V2', the conductive layer 221', the conductive via 20V2a', the conductive layer 220A', the conductive via 220V', the conductive layer 102', and the conductive via 10V4'.

[0071] Figure 3C is a cross-section of an optical packaging structure 3C according to some configurations of the present disclosure. Figure 3C The optical package structure 3C shown in FIG. 3C may be similar to Figure 3B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0072] In some configurations, substrate 20 includes cavities C2 and C2' for accommodating optical receivers 40 and 40', respectively. In some configurations, barrier 70 includes through-holes C4 and C4', each over and connected to cavities C2 and C2', respectively.

[0073] In some configurations, the optical receivers 40 and 40' are flip-chip bonded to the substrate 20. In some configurations, the electrode 410' of the optical receiver 40' is electrically connected to the conductive layer 101A' through the conductive layer 210', the conductive via 20V1', the conductive layer 210A', the conductive via 210V', the conductive layer 101', and the conductive via 10V3'. In some configurations, the electrode 420' of the optical receiver 40' is electrically connected to the conductive layer 102A' through the conductive layer 220', the conductive via 20V2', the conductive layer 220A', the conductive via 220V', the conductive layer 102', and the conductive via 10V4'.

[0074] It should be noted that the number of optical transmitters and the number of optical receivers in the optical packaging structure may vary according to actual applications and are not limited to Figures 3A to 3C The above example shown in . According to some configurations of the present disclosure, the cavity can accommodate one or more optical transmitters and / or one or more optical receivers. Therefore, the design flexibility is increased, and the device performance can be simply optimized by adjusting the number of optical transmitters and the number of optical receivers in the cavity.

[0075] Figure 4A is a cross-section of an optical package structure 4A according to some configurations of the present disclosure. Figure 4A The optical packaging structure 4A shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0076] In some configurations, a portion of the top surface (e.g., surface 1011) of substrate 10 is exposed to cavity C2. In some configurations, a portion of surface 1011 of conductive layer 101 of substrate 10 is exposed to cavity C2. In some configurations, adhesive layer 60 is partially exposed to cavity C2. In some configurations, protective layer 80 is partially exposed to cavity C2.

[0077] In some configurations, the optical receiver 40 is completely within the cavity C2. In some configurations, the electrode 410 of the optical receiver 40 is electrically connected to the conductive layer 101A through the conductive layer 101 and the conductive via 10V3.

[0078] In some configurations, the base layer 20A may be or include a black core layer. The substrate 10 may be referred to as a substrate structure, and the combination of the base layer 20A and the barrier 70 may be referred to as a confinement structure, which is above the substrate structure and configured to reduce light reflected from the confinement structure to the optical receiver 40. In some configurations, the base layer 20A is formed of or includes a black core layer, which absorbs light rather than reflects it, and thus light reflected from the barrier 70 to the optical receiver 40 may be reduced. The substrate structure (e.g., substrate 10) and the confinement structure may together define a cavity C1 for accommodating the optical emitter 30, and the portion 510 (or blocking structure) is disposed adjacent to the cavity C1 and is configured to reflect light from the optical emitter 30. In some configurations, the portion 510 (or blocking structure) and the combination of the base layer 20A and the barrier 70 (or confinement structure) are disposed between the optical emitter 30 and the optical receiver 40. According to some configurations of the present disclosure, by the base layer 20A and the barrier rib 70 formed of a black core layer, the total thickness may be reduced, and crosstalk of optical signals between an optical transmitter and an optical receiver may be further effectively prevented.

[0079] Figure 4B is a cross-section of an optical packaging structure 4B according to some configurations of the present disclosure. Figure 4B The optical package structure 4B shown in FIG. 4B may be similar to Figure 4A The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0080] In some configurations, the electrode 420 of the optical receiver 40 is electrically connected to the conductive layer 102A through the conductive wire 92, the conductive layer 102 and the conductive via 10V4. In some configurations, the optical package structure 4B does not include Figure 4A In some configurations, the barrier 70 may be omitted when the optical receiver 40 and the conductive line 92 are substantially completely received within the cavity C2. In some configurations, the base layer 20A may be or include a black core layer.

[0081] The substrate 10 may be referred to as a substrate structure, and the base layer 20A may be referred to as a confinement structure, which is above the substrate structure and configured to reduce light reflected from the confinement structure to the optical receiver 40. The substrate structure (e.g., substrate 10) and the confinement structure may jointly define a cavity C1 for accommodating the optical emitter 30, and the portion 510 (or blocking structure) is disposed adjacent to the cavity C1 and is configured to reflect light from the optical emitter 30. In some configurations, the portion 510 (or blocking structure) and the base layer 20A (or confinement structure) are disposed between the optical emitter 30 and the optical receiver 40. According to some configurations of the present disclosure, by removing the base layer 20A and the barrier 70 formed by the black core layer, the overall thickness of the optical packaging structure may be further reduced, and crosstalk between optical signals of the optical emitter and the optical receiver may be effectively prevented.

[0082] Figure 4C is a cross-section of an optical packaging structure 4C according to some configurations of the present disclosure. Figure 4C The optical package structure 4C shown in FIG. 4C may be similar to Figure 4B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0083] In some configurations, the connection portion 50R and the via portion 50V of the shielding structure are between the optical transmitter 30 and the optical receiver 40. In some configurations, the substrate 10 includes a circuit structure 10R1 electrically connected to the optical transmitter 30 and a circuit structure 10R2 electrically connected to the optical receiver 40. In some configurations, the circuit structure 10R1 includes conductive layers 110, 110A, 103, and 103A and conductive vias 10V1 and 10V2. In some configurations, the circuit structure 10R2 includes conductive layers 101, 101A, 102, and 102A and conductive vias 10V3 and 10V4. In some configurations, the via portion 50V is between the circuit structure 10R1 and the circuit structure 10R2.

[0084] According to some configurations of the present disclosure, through the configuration of the electric shielding element 50, the connecting portion 50R and the through-hole portion 50V, crosstalk between the optical transmitter and the optical receiver can be effectively prevented, and interference between the circuit structure connected to the optical transmitter and the circuit structure connected to the optical receiver can also be effectively reduced.

[0085] Figure 4D is a cross-section of an optical packaging structure 4D according to some configurations of the present disclosure. Figure 4D The optical packaging structure 4D shown in FIG. 4D may be similar to Figure 4A The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0086] In some configurations, the electrode 420 of the optical receiver 40 is electrically connected to the conductive layer 102A through the conductive wire 92, the conductive layer 102, and the conductive via 10V4. In some configurations, the cavity C2 (or recess) is connected to and substantially aligned with the through-hole C4 of the barrier 70. In some configurations, the cavity C2 and the through-hole C4 are formed by a single operation.

[0087] Figure 4E is a cross-section of an optical packaging structure 4E according to some configurations of the present disclosure. Figure 4E The optical package structure 4E shown in FIG. 4 can be similar to Figure 4D The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0088] In some configurations, the electric shield element 50 includes the vertical portion 512 without an extension covering the surface 201 of the substrate 20. In some configurations, the top surface of the vertical portion 512 is substantially aligned or coplanar with the surface 201 of the substrate 20.

[0089] Figure 4F is a cross-section of an optical packaging structure 4F according to some configurations of the present disclosure. Figure 4F The optical packaging structure 4F shown in FIG. 4 may be similar to Figure 4D The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0090] In some configurations, the electric shielding element 50 includes the vertical portion 512 without an extension covering the surface 201 of the substrate 20. In some configurations, the top surface of the vertical portion 512 is lower than the surface 201 of the substrate 20.

[0091] Figure 5A is a cross-section of an optical package structure 5A according to some configurations of the present disclosure. Figure 5B is a top view of an optical package structure 5A according to some configurations of the present disclosure. In some configurations, Figure 5A It is along Figure 5B A cross section along line 5A-5A'. Figures 5A to 5B The optical packaging structure 5A shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0092] In some configurations, the electric shield element 50 (or portion 510) is embedded in the substrate 20 and is spaced apart from the sidewall 205 of the cavity C1. In some configurations, the electric shield element 50 (or portion 510) is embedded in the substrate 20 and is spaced apart from the sidewall 205 of the cavity C1 by a portion of the substrate 20 (or a portion of the base layer 20A). In some configurations, see Figure 5B , from a top view perspective, portion 510 surrounds optical emitter 30 .

[0093] According to some configurations of the present disclosure, the electric shielding element 50 (or portion 510 ) is embedded in the substrate 20 and spaced apart from the sidewall 205 of the cavity C1 , thereby preventing the electric shielding element 50 (eg, the metal material of the electric shielding element 50 ) from affecting the light emission angle of the optical emitter 30 .

[0094] Figure 5C is a cross-section of an optical packaging structure 5C according to some configurations of the present disclosure. Figure 5D is a top view of an optical package structure 5C according to some configurations of the present disclosure. In some configurations, Figure 5C It is along Figure 5D A cross section along line 5C-5C'. Figures 5C to 5DThe optical package structure 5C shown in FIG. Figure 1A to 1B The optical packaging structures in FIG. 1 and FIG. 2 , the differences between them are as follows.

[0095] In some configurations, the electric shield element 50 (or portion 510) is embedded in the substrate 20 and is spaced apart from the sidewall 205 of the cavity C1. In some configurations, the electric shield element 50 (or portion 510) is embedded in the substrate 20 and is spaced apart from the sidewall 205 of the cavity C1 by a portion of the substrate 20 (or a portion of the base layer 20A). In some configurations, see Figure 5D , from a top view perspective, portion 510 surrounds optical emitter 30. In some configurations, portion 510 further includes a plurality of posts 510P (or through holes) surrounding optical emitter 30.

[0096] Fig. 6A , Figure 6B , Figure 6C , Fig.6D , Fig. 6E , Fig. 6F , Figure 6G , Figure 6H , Fig.6I and Figure 6J Various stages of an exemplary method for manufacturing an optical package structure 1A according to some configurations of the present disclosure are shown.

[0097] See also Fig. 6A , a base layer 20A may be provided, and the cavity C1 and the through hole C230 may be formed in the base layer 20A. In some configurations, the cavity C1 and the through hole C230 may be formed by laser drilling, etching or other suitable techniques. In some configurations, the base layer 20A may be or include an insulating material or a dielectric material.

[0098] See also Figure 6B , the cavity C2 may be formed in the base layer 20A, and the circuit structure 20R and the electric shielding element 50 may be formed. In some configurations, the circuit structure 20R includes conductive layers 210, 220, 230, 210A, 220A, and 230A and conductive vias 20V1, 20V2, and 20V3. In some configurations, the electric shielding element 50 includes a portion 510 including a vertical portion 512 on the sidewall of the cavity C1 and an extension 511 partially covering the surface 201 (or top surface) of the base layer 20A. In some configurations, the electric shielding element 50 further includes a portion 520 partially covering the surface 202 (or bottom surface) of the base layer 20A. The conductive layers 210, 220, 230, 210A, 220A, and 230A, the conductive vias 20V1, 20V2, and 20V3, and the electric shielding element 50 may be formed by electroplating.

[0099] See also Figure 6C, a base layer 10A may be provided, and conductive layers 101, 102, 103, 105, and 110 may be formed on the base layer 10A. In some configurations, the base layer 10A may be or include an insulating material or a dielectric material. In some configurations, the conductive layers 101, 102, 103, 105, and 110 may be formed by deposition or electroplating.

[0100] See also Fig.6D , the protection layer 80A may be formed on the conductive layer 110. In some configurations, the protection layer 80A may be or include a solder mask.

[0101] See also Fig. 6E , the base layer 20A with the electric shielding element 50 and the circuit structure 20R can be adhered to the base layer 10A by the adhesive layer 60. In some configurations, the conductive layer 110 is protected by the protective layer 80A to avoid exposure to the cavity C1. In some configurations, the adhesive layer 60 is disposed on the base layer 10A, the base layer 20A is subsequently laminated to the adhesive layer 60, and then the adhesive layer 60 can be heated until it softens and the base layer 20A is adhered to the base layer 10A. Therefore, the formed adhesive layer 60 can be filled in the space between the base layer 20A and the base layer 10A. In some configurations, the adhesive layer 60 can be or include a hot melt adhesive. In some configurations, the adhesive layer 60 can include an insulating adhesive sheet, a polypropylene (PP) film, a liquid insulating adhesive, or a combination thereof. According to some configurations of the present disclosure, protective layer 80A can prevent adhesive layer 60 from flowing over conductive layer 110 and thus can provide optical emitter 30 with a sufficient contact surface of conductive layer 110 to be connected thereto in subsequent operations.

[0102] See also Fig. 6F , a plurality of conductive vias (e.g., conductive vias 10V1, 10V2, 10V3, 10V4, 510V, 210V, 220V, and 230V and via portion 50V) and conductive layers 101A, 102A, 103A, 10g, and 110A may be formed to form circuit structure 10R. In some configurations, the conductive vias and conductive layers of circuit structure 10R may be formed by deposition or electroplating.

[0103] See also Figure 6G , protective layers 81 and 82 may be formed. In some configurations, protective layer 81 is formed on surface 201 and partially covers conductive layer 230. In some configurations, protective layer 82 is formed to partially cover conductive layers 101A, 102A, 103A, 10g, and 110A. In some configurations, protective layers 81 and 82 may be or include solder masks.

[0104] See also Figure 6H, a barrier rib 70 including through holes C3 and C4 may be formed over the substrate 20. In some configurations, the barrier rib 70 may be laminated to the protection layer 81.

[0105] See also Fig.6I , the portion of the protection layer 80A exposed to the cavity C1 may be removed to form the protection layer 80. In some configurations, the conductive layer 110 is exposed by the protection layer 80 and is exposed to the cavity C1.

[0106] See also Figure 6J , the optical transmitter 30 may be disposed in the cavity C1, and the optical receiver 40 may be disposed in the cavity C2. Thus, an optical packaging structure 1A is formed.

[0107] Fig. 7A , Figure 7B , Figure 7C , Fig.7D , Fig. 7E , Figure 7F , Figure 7G , Figure 7H , Fig.7I , Figure 7J and Figure 7K Various stages of an exemplary method for manufacturing an optical package structure 4A according to some configurations of the present disclosure are shown.

[0108] See also Fig. 7A , a base layer 20A may be provided, and the cavity C1 and the through holes C220 and C230 may be formed in the base layer 20A. In some configurations, the cavity C1 and the through holes C220 and C230 may be formed by laser drilling, etching or other suitable techniques. In some configurations, the base layer 20A may be or include an insulating material or a dielectric material.

[0109] See also Figure 7B , a circuit structure 20R and an electric shielding element 50 may be formed. In some configurations, the circuit structure 20R includes conductive layers 220, 230, 220A and 230A and conductive vias 20V2 and 20V3. In some configurations, the electric shielding element 50 includes a portion 510 including a vertical portion 512 on a sidewall of the cavity C1 and an extension 511 partially covering a surface 201 (or a top surface) of the base layer 20A. In some configurations, the electric shielding element 50 further includes a portion 520 partially covering a surface 202 (or a bottom surface) of the base layer 20A. The conductive layers 220, 230, 220A and 230A, the conductive vias 20V2 and 20V3, and the electric shielding element 50 may be formed by electroplating.

[0110] See also Figure 7C , the cavity C2 may be formed in the base layer 20A.

[0111] See also Fig.7D, a base layer 10A may be provided, and conductive layers 101, 102, 103, 105, and 110 may be formed on the base layer 10A. In some configurations, the base layer 10A may be or include an insulating material or a dielectric material. In some configurations, the conductive layers 101, 102, 103, 105, and 110 may be formed by deposition or electroplating.

[0112] See also Fig. 7E , protection layer 80A may be formed on conductive layers 101 and 110. In some configurations, protection layer 80A may be or include a solder mask.

[0113] See also Figure 7F , the base layer 20A with the electric shielding element 50 and the circuit structure 20R can be adhered to the base layer 10A by the adhesive layer 60. In some configurations, the conductive layer 110 is protected by the protective layer 80A to avoid exposure to the cavity C1, and the conductive layer 101 is protected by the protective layer 80A to avoid exposure to the cavity C2. In some configurations, the adhesive layer 60 is disposed on the base layer 10A, the base layer 20A is subsequently laminated to the adhesive layer 60, and then the adhesive layer 60 can be heated until it softens and the base layer 20A is adhered to the base layer 10A. Therefore, the formed adhesive layer 60 can be filled in the space between the base layer 20A and the base layer 10A. In some configurations, the adhesive layer 60 can be or include a hot melt adhesive. In some configurations, the adhesive layer 60 can include an insulating adhesive sheet, a polypropylene (PP) film, a liquid insulating adhesive, or a combination thereof. According to some configurations of the present disclosure, the protective layer 80A can prevent the adhesive layer 60 from flowing over the conductive layers 101 and 110, and thus can provide the optical transmitter 30 and the optical receiver 40 with sufficient contact surfaces of the conductive layers 101 and 110, which will be connected to the optical transmitter and the optical receiver in subsequent operations.

[0114] See also Figure 7G , a plurality of conductive vias (e.g., conductive vias 10V1, 10V2, 10V3, 10V4, 510V, 220V, and 230V and via portion 50V) and conductive layers 101A, 102A, 103A, 10g, and 110A may be formed to form circuit structure 10R. In some configurations, the conductive vias and conductive layers of circuit structure 10R may be formed by deposition or electroplating.

[0115] See also Figure 7H , protective layers 81 and 82 may be formed. In some configurations, protective layer 81 is formed on surface 201 and partially covers conductive layers 220 and 230. In some configurations, protective layer 82 is formed to partially cover conductive layers 101A, 102A, 103A, 10g, and 110A. In some configurations, protective layers 81 and 82 may be or include solder masks.

[0116] See also Fig.7I , a barrier rib 70 including through holes C3 and C4 may be formed over the substrate 20. In some configurations, the barrier rib 70 may be laminated to the protection layer 81.

[0117] See also Figure 7J , the portion of the protective layer 80A exposed to the cavities C1 and C2 may be removed to form the protective layer 80. In some configurations, the conductive layer 110 is exposed by the protective layer 80 and is exposed to the cavity C1. In some configurations, the conductive layer 101 is exposed by the protective layer 80 and is exposed to the cavity C2.

[0118] See also Figure 7K , the optical transmitter 30 may be disposed in the cavity C1, and the optical receiver 40 may be disposed in the cavity C2. Thus, an optical packaging structure 4A is formed.

[0119] Fig. 8A , Figure 8B , Figure 8C , Fig.8D and Fig. 8E Various stages of an exemplary method for manufacturing an optical package structure 4D according to some configurations of the present disclosure are shown.

[0120] See also Fig. 8A , a base layer 20A may be provided, and the cavity C1 and the through hole C230 may be formed in the base layer 20A. In some configurations, the base layer 20A may be or include an insulating material or a dielectric material.

[0121] See also Figure 8B , a circuit structure 20R and an electric shielding element 50 may be formed. In some configurations, the circuit structure 20R includes conductive layers 230 and 230A and conductive vias 20V3. In some configurations, the electric shielding element 50 includes a portion 510 including a vertical portion 512 on a sidewall of the cavity C1 and an extension 511 partially covering a surface 201 (or top surface) of the base layer 20A. In some configurations, the electric shielding element 50 further includes a portion 520 partially covering a surface 202 (or bottom surface) of the base layer 20A. The conductive layers 230 and 230A, the conductive vias 20V3, and the electric shielding element 50 may be formed by electroplating.

[0122] See also Figure 8C , which can be executed similar to Figures 6C to 6G The operations shown in FIG. 1 and FIG. 2 are to provide a base layer 10A and form a circuit structure 10R, an electric shielding element 50, adhere a base layer 20A to the base layer 10A, and form protective layers 80, 81, and 82. Next, a barrier layer 70A including a through hole C3 may be formed over the substrate 20. In some configurations, the barrier layer 70A may be laminated to the protective layer 81.

[0123] See also Fig.8D , the cavity C2 may be formed in the base layer 20A, and the through hole C4 may be formed in the barrier layer 70A to form the barrier 70 including the through holes C3 and C4. In some configurations, the cavity C2 and the through hole C4 are formed in one operation, such as by a single mechanical drilling operation or a single laser drilling operation. In some configurations, the through hole C4 is substantially aligned with the cavity C2.

[0124] See also Fig. 8E , the optical transmitter 30 may be disposed in the cavity C1, and the optical receiver 40 may be disposed in the cavity C2. Thus, an optical packaging structure 4D is formed.

[0125] In some cases, the two through holes of the barrier may be designed to be relatively close to each other; that is, the adjacent through holes are designed to be separated from each other by a relatively small distance. Therefore, the small distance between the through holes may be too narrow, so that the barrier cannot form the two through holes in the relatively thin barrier before being laminated to the substrate. In contrast, according to some configurations of the present disclosure, a barrier having a through hole C3 is laminated to the substrate so that the substrate can act as a support for the relatively thin barrier, and then the second through hole C4 can be formed in the barrier, and the barrier together with the substrate has a relatively high structural strength. In addition, the cavity C2 and the through hole C4 can be formed by a single operation, and therefore the cavity C2 and the through hole C4 are aligned with each other. Therefore, even if the predetermined distance or width between the through holes C3 and C4 is relatively small, the structure and the process for forming the structure can also provide relatively good processability and relatively satisfactory structural strength. Therefore, the yield can be improved.

[0126] Unless otherwise specified, spatial descriptions such as "above", "below", "up", "left", "right", "lower", "top", "bottom", "vertical", "horizontal", "side", "above", "below", "upper", "above", "below", etc. are indicated relative to the orientation shown in the figure. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and that embodiments of the structures described herein may be spatially configured in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not deviated by such configurations.

[0127] As used herein, the terms "approximately," "substantially," "substantially," and "about" are used to describe and explain minor variations. When used in conjunction with an event or circumstance, these terms may refer to instances where the event or circumstance occurred exactly as well as instances where the event or circumstance occurred very approximately. For example, when used in conjunction with a numerical value, these terms may refer to a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a first numerical value is within a range of variation of less than or equal to ±10% of a second numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the first numerical value may be considered to be "substantially" the same as or equal to the second numerical value. For example, "substantially" vertical can refer to an angular variation range of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0128] If the displacement between the two surfaces is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the two surfaces can be considered to be coplanar or substantially coplanar. If the displacement between the highest point and the lowest point of a surface is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the surface can be considered to be substantially flat.

[0129] As used herein, the singular forms "a," "an," and "the" may include plural or plural referents unless the context clearly indicates otherwise.

[0130] As used herein, the terms "conductive," "electrically conductive," and "conductivity" refer to the ability to carry an electric current. Conductive materials generally refer to materials that present little or no resistance to the flow of electric current. One unit of measurement for conductivity is Siemens per meter (S / m). Typically, a conductive material is one that has a conductivity greater than about 10 4 S / m, for example at least 10 5 S / m or at least 10 6 S / m of a material. The conductivity of a material sometimes varies with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0131] In addition, amounts, ratios and other numerical values ​​are sometimes presented in this article in a range format. It should be understood that such a range format is used for the sake of convenience and brevity, and should be flexibly understood to include not only the values ​​explicitly specified as the limits of the range, but also all individual values ​​or sub-ranges contained within the range, as if each value and sub-range were explicitly specified.

[0132] Although the present disclosure has been described and illustrated with reference to the specific embodiments of the present disclosure, these descriptions and illustrations are not restrictive. It should be understood by those skilled in the art that various changes may be made and equivalents may be replaced without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the process reproduction in the present disclosure and the actual equipment. There may be other embodiments that are not specifically described in the present disclosure. The description and drawings should be regarded as illustrative rather than restrictive. Modifications may be made to make specific situations, materials, material compositions, methods or processes suitable for the goals, spirit and scope of the present disclosure. All such modifications are deemed to be included within the scope of the appended claims. Although the disclosed method has been described herein with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of operations are not limitations of the present disclosure.

Claims

1. An optical packaging structure, comprising: a first substrate; a second substrate overlying the first substrate, wherein the first substrate and the second substrate together define a first cavity; a first optical component disposed in the first cavity; a second optical component disposed above the first substrate; as well as An electrical shielding element is disposed adjacent to a sidewall of the first cavity and between the first optical component and the second optical component. 2 . The optical package structure according to claim 1 , wherein the electric shielding element covers the sidewalls of the first cavity. 3 . The optical package structure according to claim 1 , wherein the electric shielding element is embedded in the second substrate and is spaced apart from the sidewall of the first cavity by a portion of the second substrate. 4 . The optical package structure of claim 1 , further comprising a conductor directly connected to the first optical component and the second substrate. 5 . The optical package structure of claim 4 , wherein the second substrate is electrically connected to the first substrate and the first optical component. 6 . The optical package structure according to claim 1 , wherein the electric shielding element extends along the side wall to a surface of the second substrate facing the first substrate. 7 . The optical package structure according to claim 6 , further comprising a connecting element electrically connecting the electric shielding element to a grounding element of the first substrate. 8 . The optical packaging structure according to claim 7 , further comprising an adhesive layer between the first substrate and the second substrate and encapsulating the connection element. 9 . The optical package structure according to claim 1 , wherein the second substrate defines a second cavity for accommodating the second optical component. 10 . The optical packaging structure according to claim 9 , wherein relative to the first substrate, an elevation of a top surface of the second optical component is higher than an elevation of a top portion of the first cavity. 11 . The optical package structure of claim 10 , further comprising a light blocking structure disposed over the second substrate and between the first optical component and the second optical component. 12 . The optical package structure according to claim 1 , wherein the first substrate comprises a conductive layer exposed to the first cavity and spaced apart from the electric shielding element by a protective layer. 13 . The optical packaging structure according to claim 12 , further comprising an adhesive layer configured to adhere the first substrate and the second substrate and directly contact the protection layer, the electric shielding element, and the conductive layer.

14. The optical packaging structure of claim 1, wherein the first substrate includes a first circuit structure electrically connected to the first optical component and a second circuit structure electrically connected to the second optical component, and the electrical shielding element further includes a portion between the first circuit structure and the second circuit structure.

15. An optical packaging structure, comprising: a first substrate including a first circuit structure; a second substrate including a second circuit structure; an adhesive layer between the first substrate and the second substrate; as well as A shielding structure is at least partially encapsulated by the adhesive layer and is configured to reduce electromagnetic interference between the first circuit structure and the second circuit structure.

16. The optical package structure according to claim 15, further comprising: an optical transmitter disposed on the first circuit structure; as well as an optical receiver disposed on the second circuit structure, Wherein the shielding structure includes a portion between the optical transmitter and the optical receiver and is configured to reduce light interference between the optical transmitter and the optical receiver. 17 . The optical package structure of claim 16 , wherein the shielding structure further comprises a connection portion extending into the first substrate and electrically connected to a ground element of the first substrate.

18. An optical packaging structure, comprising: Substrate structure; an optical receiver over the substrate structure; as well as A confinement structure is above the substrate structure and is configured to reduce first light reflected from the confinement structure to the optical receiver.

19. The optical package structure of claim 18, wherein the substrate structure and the confinement structure together define a cavity for accommodating an optical emitter, and the optical package structure further comprises a blocking structure disposed adjacent to the cavity and configured to reflect a second light from the optical emitter.

20. The optical package structure of claim 19, wherein the blocking structure and the confining structure are disposed between the optical transmitter and the optical receiver.

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