Composite film and preparation method thereof, photoelectric device and display device

Abstract

The embodiment of the invention belongs to the technical field of display, and relates to a preparation method of a composite film, which comprises the following steps: providing a mixed solution containing an inorganic nano material; depositing the mixed solution to form an inorganic nano material layer; and placing the inorganic nano material layer in an atmosphere containing a bornyl ester modification material for first treatment to obtain the composite film. The invention also relates to a composite film, a photoelectric device and a display device. According to the technical scheme provided by the invention, the hole mobility of the composite film can be improved, and the hole injection capability is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a composite film, a method for preparing the composite film, an optoelectronic device, and a display module. Background Art

[0002] QLED (Quantum Dots Light-Emitting Diode) is an emerging display device whose luminescent material uses inorganic quantum dots with more stable performance. The unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect of quantum dots make them show excellent physical properties, especially their optical properties. Compared with organic fluorescent dyes, quantum dots prepared by colloid method have the advantages of adjustable spectrum, high luminous intensity, high color purity, long fluorescence lifetime, and single light source can excite multi-color fluorescence.

[0003] At present, inorganic nanomaterials can be used as functional layers in light-emitting devices, but there is still a problem of unbalanced injection of holes and electrons, resulting in low device efficiency. Summary of the invention

[0004] The embodiments of the present application aim to provide a composite film and a method for preparing the same, an optoelectronic device, and a display device.

[0005] In order to solve the above technical problems, the present application provides a method for preparing a composite film, which adopts the following technical solution:

[0006] A method for preparing a composite film comprises the following steps:

[0007] Providing a mixed solution including an inorganic nanomaterial;

[0008] Depositing the mixed solution to form an inorganic nanomaterial layer;

[0009] The inorganic nano material layer is placed in an atmosphere containing a borneol ester modification material for a first treatment to obtain the composite film.

[0010] Furthermore, the step of placing the inorganic nanomaterial layer in an atmosphere containing a borneol ester modified material for a first treatment comprises:

[0011] Under negative pressure conditions, the inorganic nano material layer is placed in an atmosphere containing a borneol ester modified material for a first treatment.

[0012] Furthermore, the negative pressure of the negative pressure condition is 1×10 -5 ~1×10 -4 Pa; and / or

[0013] The temperature range of the first treatment is 20-30° C.; and / or

[0014] The first treatment lasts for 5 to 30 minutes.

[0015] Furthermore, the inorganic nanomaterial includes at least one of a single structure quantum dot and a core-shell structure quantum dot, the material of the single structure quantum dot, the core material and the shell material of the core-shell structure quantum dot are respectively selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, the shell layer of the core-shell structure quantum dot is one or more layers, wherein the II-VI group compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, Cd At least one of SeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI compound includes SnS , SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, Ga At least one of PSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and Group I-III-VI compounds include CuInS 2 、CuInSe 2 AgInS 2 At least one of;

[0016] The inorganic nanomaterial further comprises a ligand connected to the surface of the quantum dot, wherein the ligand comprises at least one of an acid ligand, a thiol ligand, an amine ligand, a phosphine ligand, a phospholipid, a phospholipid, a polyvinyl pyridine, etc.; the acid ligand comprises at least one of deca-acid, undecylenic acid, tetradecanoic acid, oleic acid and stearic acid; and / or

[0017] The thiol ligand comprises at least one of octadecyl mercaptan, dodecyl mercaptan and octadecyl mercaptan; and / or

[0018] The amine ligand includes one or more of oleylamine, octadecylamine and octaamine; the (oxygen) phosphine ligand includes at least one of trioctylphosphine and trioctylphosphine oxide; and / or

[0019] The mixed solution further includes a solvent, and the solvent includes at least one of methanol, ethanol, isopropanol, acetone, ethyl acetate, acetonitrile, n-octane, benzene, toluene, cyclohexane, hexane, cyclooctane and octane; and / or

[0020] The mass concentration of the inorganic nanomaterial in the mixed solution is 20 mg / ml to 40 mg / ml; and / or

[0021] The material of the borneol ester modified material is Among them, R 1 At least one selected from C1 to C5 alkyl or alkenyl groups, R 2 It is selected from cycloalkyl groups having 6 to 15 ring carbon atoms.

[0022] Furthermore, the bornyl ester modified material includes at least one of levorotatory bornyl acetate, isobornyl acrylate, isobornyl methacrylate, isobornyl acetate and bornyl acetate.

[0023] Furthermore, the step of forming the inorganic nanomaterial layer includes:

[0024] heat-treating the mixed solution to obtain an inorganic nanomaterial layer including the inorganic nanomaterial;

[0025] Wherein, the temperature of the heat treatment is 80-120° C.; the time of the heat treatment is 1-10 min.

[0026] The present application also provides a composite film, which adopts the following technical solution:

[0027] A composite film comprises an inorganic nano material and a borneol ester modified material.

[0028] Furthermore, in the composite film, the weight percentage of the borneol ester modification material is 0.01% to 1%.

[0029] Furthermore, the composite film comprises:

[0030] An inorganic nanomaterial layer, wherein the inorganic nanomaterial layer comprises an inorganic nanomaterial;

[0031] The function modification layer is arranged on the inorganic nano material layer, and the function modification layer comprises inorganic nano material and borneol ester modification material.

[0032] Furthermore, the thickness ratio of the inorganic nanomaterial layer to the functional modification layer is 1:(1-4).

[0033] The present application also provides a photoelectric device, which adopts the following technical solution:

[0034] A photoelectric device, comprising:

[0035] An anode layer and a cathode layer are arranged opposite to each other;

[0036] The photoelectric functional layer is arranged between the anode layer and the cathode layer, and the photoelectric functional layer comprises inorganic nanomaterials and borneol ester modified materials.

[0037] Furthermore, the photoelectric functional layer includes an inorganic nanomaterial layer and a functional modification layer disposed on the inorganic nanomaterial layer, the inorganic nanomaterial layer includes an inorganic nanomaterial, and the functional modification layer includes an inorganic nanomaterial and a borneol ester modification material.

[0038] Furthermore, the inorganic nanomaterial layer is close to the cathode layer, and the functional modification layer is close to the anode layer; and / or

[0039] The material of the anode layer and / or cathode layer includes at least one of a metal, a carbon material and a metal oxide, wherein the metal includes at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes at least one of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a doped or undoped metal oxide, including at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or includes a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, wherein the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 At least one of; and / or

[0040] The inorganic nanomaterial comprises at least one of single structure quantum dots and core-shell structure quantum dots, the material of the single structure quantum dots, the core material and the shell material of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots is one layer or multiple layers; and / or

[0041] The material of the borneol ester modified material is Among them, R 1 At least one selected from C1 to C5 alkyl or alkenyl groups, R 2 is selected from cycloalkyl groups having 6 to 15 ring carbon atoms; and / or

[0042] In the composite film, the weight percentage of the borneol ester modification material is 0.01% to 1%; and / or

[0043] The photoelectric device further comprises a hole functional layer, wherein the hole functional layer is disposed between the photoelectric functional layer and the anode layer; the hole functional layer comprises a hole injection layer and a hole transport layer, and the material of the hole injection layer and / or the hole transport layer comprises at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60; and / or

[0044] The photoelectric device also includes an electron transport layer, which is arranged between the photoelectric functional layer and the cathode layer; the material of the electron transport layer includes inorganic materials and / or organic materials, and the inorganic material is selected from at least one of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped element includes at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic material is selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds.

[0045] The present application also provides a display device, which adopts the following technical solution:

[0046] A display device comprises the above-mentioned optoelectronic device or is prepared by the above-mentioned method for preparing the optoelectronic device.

[0047] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0048] The present application treats the inorganic nanomaterial layer in an atmosphere containing borneol ester-modified materials, so that the borneol ester-modified materials penetrate into the inorganic nanomaterial layer to obtain a composite film, thereby improving the hole injection efficiency of the composite film and effectively improving the imbalance of electron and hole injection in the composite film. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the scheme of the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0050] Figure 1 is a flow chart of a method for preparing a composite film according to an embodiment of the present application;

[0051] Figure 2 is a flow chart of a method for preparing a photoelectric device according to an embodiment of the present application;

[0052] Figure 3 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present application;

[0053] Figure 4 It is a first current density-voltage curve diagram of the single hole device of Example 1 and Comparative Example 1 of the present application.

[0054] Reference numerals:

[0055] 1. Anode layer; 2. Hole functional layer; 21. Hole injection layer; 22. Hole transport layer; 3. Photoelectric functional layer; 4. Electron transport layer; 5. Cathode layer. DETAILED DESCRIPTION

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0057] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0058] See also Figure 1 As shown, the embodiment of the present application provides a method for preparing a composite film, comprising the following steps:

[0059] Step S100, providing a mixed solution including inorganic nanomaterials.

[0060] Step S200, depositing the mixed solution to form an inorganic nanomaterial layer.

[0061] Step S300, placing the inorganic nano material layer in an atmosphere containing a borneol ester modification material for a first treatment to obtain the composite film.

[0062] The preparation method of the composite film provided in the embodiment of the present application is carried out by placing an inorganic nanomaterial layer in an atmosphere containing a borneol ester-modified material for treatment, so that the borneol ester-modified material penetrates into the inorganic nanomaterial layer to obtain a composite film. Since the borneol ester-modified material has a large polarity and a heterocyclic ring, the electron cloud is concentrated in the heterocyclic ring and easily jumps, which can improve the hole injection efficiency of the composite film. Moreover, the shape of the inorganic nanomaterial is not very regular. After being treated in an atmosphere containing a borneol ester-modified material, the inorganic nanomaterial is affected by the polarity of the borneol ester-modified material and rearranges in a more orderly manner, which is reflected in that the part that is advantageous for transmitting holes and the part that is advantageous for transmitting electrons are facing opposite surfaces, respectively, thereby effectively improving the imbalance of electron and hole injection in the composite film.

[0063] In some embodiments, in step S100, the solvent includes at least one of methanol, ethanol, isopropanol, acetone, ethyl acetate, acetonitrile, n-octane, benzene, toluene, cyclohexane, hexane, cyclooctane and octane. In some embodiments, the inorganic nanomaterial includes at least one of single structure quantum dots and core-shell structure quantum dots, and the material of the single structure quantum dots, the core material and the shell material of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The shell layer of the core-shell structure quantum dots is one or more layers, wherein the II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, At least one of CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI compound includes Sn At least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, G At least one of aPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and a Group I-III-VI compound including CuInS 2 、CuInSe 2 AgInS 2 At least one of .

[0064] The inorganic nanomaterial also includes a ligand connected to the surface of the quantum dot, and the ligand includes at least one of an acid ligand, a thiol ligand, an amine ligand, a phosphine ligand, a phospholipid, a soft phosphine, a polyvinyl pyridine, etc.; the acid ligand includes at least one of decadecanoic acid, undecylenic acid, tetradecanoic acid, oleic acid and stearic acid; the thiol ligand includes at least one of octadecyl mercaptan, dodecyl mercaptan and octadecyl mercaptan; the amine ligand includes one or more of oleylamine, octadecylamine and octaamine; the (oxygen) phosphine ligand includes at least one of trioctylphosphine and trioctylphosphine oxide.

[0065] In this embodiment, the inorganic nanomaterial adopts a core-shell structure of CdSe / CdS, wherein the quantum dot ligand is oleylamine and / or thiol ligand.

[0066] In the embodiment of the present application, borneol ester modified materials are used to perform surface treatment on the composite film, and the borneol ester modified materials are used to play a synergistic role with the ligands in the inorganic nanomaterials. Since the ligands are easily detached or oxidized, the borneol ester modified materials are adsorbed on the surface of the inorganic nanomaterials, which can further stabilize the inorganic nanomaterials. In addition, the hole transport ability of the borneol ester modified materials is better than that of the insulating ligands (such as oleic acid ligands and oleylamine ligands). Therefore, the hole transport ability of the composite film can be improved after the surface treatment of the composite film with the borneol ester modified materials.

[0067] In some embodiments, the mixed solution further includes a solvent, and the solvent includes at least one of methanol, ethanol, isopropanol, acetone, ethyl acetate, acetonitrile, n-octane, benzene, toluene, cyclohexane, hexane, cyclooctane and octane.

[0068] In some embodiments, the step S100 of providing a mixed solution including inorganic nanomaterials specifically includes the following steps:

[0069] The inorganic nanomaterials are dissolved in a solvent to form a mixed solution.

[0070] In some embodiments, the mass concentration of the inorganic nanomaterial in the mixed solution is 20 mg / ml to 40 mg / ml. Specifically, the mass concentration of the inorganic nanomaterial in the mixed solution can be any one of 20 mg / ml, 30 mg / ml, 40 mg / ml, or a range formed between any two values.

[0071] In some embodiments, the step S200 of forming an inorganic nanomaterial layer specifically includes the following steps:

[0072] The mixed solution is heat-treated to obtain an inorganic nanomaterial layer including the inorganic nanomaterial.

[0073] In some embodiments, the mixed solution forms an inorganic nanomaterial liquid film through a solution method, and the inorganic nanomaterial liquid film is heat-treated to evaporate the solvent to obtain an inorganic nanomaterial layer including the inorganic nanomaterial, wherein the solution method can be spin coating, printing, inkjet printing, scraping, printing, dip pulling, immersion, spraying, roller coating, casting, slit coating and strip coating.

[0074] In some embodiments, the temperature during heat treatment is defined as a second set temperature, and the second set temperature is 80-120°C. Specifically, the second set temperature can be set to any one of 80°C, 90°C, 100°C, 110°C, 120°C or a range formed between any two values.

[0075] The duration of the heat treatment is 1 to 10 minutes. Specifically, the duration of the heat treatment can be set to any one of 1 minute, 5 minutes, and 10 minutes, or a range formed between any two values.

[0076] In some embodiments, before step S300, the following steps are also included:

[0077] The borneol ester modified material is placed in a negative pressure sealed chamber to form an atmosphere containing the borneol ester modified material in the negative pressure sealed chamber.

[0078] The negative pressure of the negative pressure sealing chamber is 1×10 -5 ~1×10 -4 Pa.

[0079] In this embodiment, the set negative pressure can be set to 1×10 -5 Pa, 2×10 -5 Pa, 3×10 -5 Pa, 4×10 - 5 Pa, 5×10 -5 Pa, 6×10 -5 Pa, 7×10 -5 Pa, 8×10 -5 Pa, 9×10 -5 Pa, 1×10 -5 Pa is the range formed by any one value or any two values.

[0080] In some embodiments, in step S300, placing the inorganic nanomaterial layer in an atmosphere containing a borneol ester-modified material for a first treatment to obtain the composite film specifically comprises the following steps:

[0081] Under negative pressure conditions, the inorganic nano material layer is placed in an atmosphere containing a borneol ester modified material for a first treatment to obtain the composite film.

[0082] In some embodiments, the temperature during the first treatment is defined as a first set temperature; wherein the first set temperature is 20-30°C. In this embodiment, the first set temperature can be set to any one of 20°C, 21°C, 22°C, 23°C, 24°C, 25°C, 26°C, 27°C, 28°C, 29°C, 30°C or a range formed between any two values.

[0083] The present application places the inorganic nanomaterial layer in a negative pressure sealed cavity containing an atmosphere of borneol ester modified materials. The borneol ester modified materials can effectively penetrate into the inorganic nanomaterial layer at room temperature and negative pressure conditions and be adsorbed in the inorganic nanomaterials, thereby improving the permeability of the borneol ester modified materials. In addition, under negative pressure conditions, the borneol ester modified materials can be evenly distributed in the inorganic nanomaterial layer.

[0084] In some embodiments, the material of the borneol ester modified material is Where R 1 At least one selected from C1-C5 alkyl or olefin, R 2 A cycloalkyl group selected from C6 to C15.

[0085] In some embodiments, the R1 group of the borneol ester modified material is selected from a C1-C5 alkyl group, such as methyl, ethyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, and pentyl, which has better stability than olefins and can improve the stability of the borneol ester modified material. Among them, as the number of carbon atoms increases, the viscosity and boiling point of the borneol ester modified material will increase, thereby reducing the penetration rate and volatilization rate.

[0086] In this embodiment, the bornyl ester modified material may specifically be at least one of L-bornyl acetate (L-bornyl acetate), isobornyl acrylate, isobornyl methacrylate, isobornyl acetate and bornyl acetate.

[0087] Since borneol ester modified materials contain ester bonds, they have a certain coordination effect on quantum dots and can be adsorbed on the surface of quantum dots. Due to their cyclic alkane structure, the electron cloud overlaps greatly and electrons can easily jump in the electron cloud, so the conductivity is better. At the same time, the Homo energy level of isoborneol ester materials matches the energy level of quantum dots, which is beneficial to improving the hole transmission capacity.

[0088] Exemplarily, the borneol ester modified material is selected from L-borneol acetate, wherein the R1 group of the L-borneol acetate is a methyl group, which is more stable than olefins and is therefore not easily affected by environmental factors (such as light and heat), and can increase the volatilization rate and the penetration rate of the borneol ester organic material.

[0089] In some embodiments, the surface treatment time of the composite film by the borneol ester modified material in the first treatment is 5 to 30 minutes, so that the borneol ester modified material can fully penetrate into the inorganic nanomaterial layer.

[0090] In this embodiment, the set time is any one of 5 min, 10 min, 15 min, 20 min, 25 min, and 30 min, or a range formed between any two values.

[0091] Based on the above-mentioned method for preparing the composite film, an embodiment of the present application further provides a composite film, and the composite film is prepared by the above-mentioned method for preparing the composite film.

[0092] The composite film provided in the embodiment of the present application is prepared by the above-mentioned composite film preparation method. The composite film is used for the quantum dot light-emitting layer to improve the film uniformity of the quantum dot light-emitting layer and to increase the hole mobility in the quantum dot light-emitting layer, thereby achieving charge balance of the quantum dot light-emitting layer by increasing the number of holes injected in the quantum dot light-emitting layer.

[0093] In some embodiments, the composite film includes an inorganic nanomaterial and a borneol ester modified material.

[0094] It is understood that the composite film may include a mixture of inorganic nanomaterials and borneol ester modified materials.

[0095] Among them, in the composite film, the weight percentage of the borneol ester modified material is 0.01% to 1%. Specifically, in the composite film, the weight percentage of the borneol ester modified material can be set to any one of 0.01%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1% or a range formed between any two values.

[0096] In other embodiments, the composite film may further include: an inorganic nanomaterial layer and a functional modification layer.

[0097] The inorganic nanomaterial layer includes inorganic nanomaterials, and the functional modification layer is arranged on the inorganic nanomaterial layer, including inorganic nanomaterials and borneol ester modification materials, wherein when the composite film is used as a quantum dot light-emitting layer of a photoelectric device, the inorganic nanomaterial layer is close to the cathode layer, and the functional modification layer is close to the anode layer.

[0098] In some embodiments, the thickness ratio of the inorganic nanomaterial layer to the functional modification layer is 1:(1 to 4). In some embodiments, due to the adsorption rate, atmospheric concentration and adsorption depth of borneol ester modification materials on the functional modification layer, the thickness of the functional modification layer in this embodiment refers to the maximum value of the thickness at each location.

[0099] Specifically, the thickness of the inorganic nano material layer is 5 to 10 nm, the thickness of the functional modification layer is 10 to 20 nm, and the thickness ratio of the inorganic nano material layer to the functional modification layer is satisfied, for example: the thickness of the inorganic nano material layer is 5 nm, and the thickness of the functional modification layer is 10 nm; or, the thickness of the inorganic nano material layer is 5 nm, and the thickness of the functional modification layer is 15 nm; or, the thickness of the inorganic nano material layer is 5 nm, and the thickness of the functional modification layer is 20 nm; or, the thickness of the inorganic nano material layer is 10 nm, and the thickness of the functional modification layer is 10 nm; or, the thickness of the inorganic nano material layer is 10 nm, and the thickness of the functional modification layer is 20 nm.

[0100] The embodiment of the present application controls the standing time of the inorganic nanomaterial layer and the borneol ester modified material in the negative pressure sealing chamber, thereby controlling the content of the borneol ester modified material in the composite film, thereby controlling the composite film to have good film uniformity and improving the hole mobility in the composite film, thereby achieving an increase in the number of hole injections in the composite film.

[0101] See also Figure 3 As shown, an embodiment of the present application further provides a photoelectric device, wherein the photoelectric device contains the above-mentioned composite film. In some embodiments, the composite film serves as the photoelectric functional layer 3 of the photoelectric device.

[0102] In some embodiments, the optoelectronic device includes an anode layer 1 and a cathode layer 5 arranged opposite to each other. The optoelectronic functional layer 3 is made of the composite thin film as described above or is prepared by the composite thin film preparation method as described above.

[0103] Exemplarily, the photoelectric functional layer 3 is a light-emitting layer.

[0104] Since the photoelectric functional layer 3 in the embodiment of the present application is treated and rearranged in an atmosphere containing borneol ester-modified materials, the portion of the photoelectric functional layer 3 that is advantageous for transporting holes is close to the anode layer 1, and the portion that is advantageous for transporting electrons is close to the cathode layer 5, thereby effectively improving the imbalance in hole and electron injection in the composite film; in addition, since the boiling point of the borneol ester-modified materials is relatively high, it is not easy to volatilize due to high temperature when preparing other film layers of the device, thereby effectively improving the stability of the device.

[0105] The photoelectric functional layer 3 of the photoelectric device provided in the embodiment of the present application adopts the above-mentioned composite film or is prepared by the above-mentioned composite film preparation method to improve the film uniformity of the photoelectric functional layer 3 and the hole injection efficiency in the photoelectric functional layer 3, thereby increasing the number of holes injected in the photoelectric functional layer 3, balancing the charge of the photoelectric functional layer 3, and further improving the luminous efficiency of the photoelectric device.

[0106] In some embodiments, the composite film includes inorganic nanomaterials and borneol ester modified materials. In the composite film, the weight percentage of the borneol ester modified materials is 0.01% to 1%.

[0107] In this embodiment, in the composite film, the weight percentage of the borneol ester modified material can be any value among 0.01%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1% or a range formed between any two values.

[0108] In other embodiments, the composite film includes an inorganic nanomaterial layer and a functional modification layer arranged on the inorganic nanomaterial layer, the inorganic nanomaterial layer includes inorganic nanomaterials, the functional modification layer includes inorganic nanomaterials and borneol ester modification materials, the inorganic nanomaterial layer is close to the cathode layer, and the functional modification layer is close to the anode layer. The hole injection efficiency of the quantum dot light-emitting layer is improved by the incorporation of borneol ester modification materials, thereby increasing the number of holes injected in the quantum dot light-emitting layer and improving the balance between the number of holes and electrons in the quantum dot light-emitting layer.

[0109] In some embodiments, the material of the anode layer 1 and / or the cathode layer 5 includes at least one of a metal, a carbon material and a metal oxide, wherein the metal includes at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes at least one of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a doped or undoped metal oxide, including at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or includes a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, and the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 At least one of, in this embodiment, the anode layer 1 is formed on a substrate to form an ITO / Ag / ITO substrate, and the material of the cathode layer 5 is Ag.

[0110] In some embodiments, the optoelectronic device further includes a hole functional layer 2 , and the hole functional layer 2 is disposed between the optoelectronic functional layer 3 and the anode layer 1 .

[0111] The hole functional layer 2 includes a hole injection layer 21 and a hole transport layer 22 which are stacked. The materials of the hole injection layer 21 and / or the hole transport layer 22 include at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tri(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60. In the present embodiment, the material of the hole injection layer 21 is PEDOT:PSS, and the material of the hole transport layer 22 is TFB solution.

[0112] In some embodiments, the optoelectronic device further includes an electron transport layer 4 , and the electron transport layer 4 is disposed between the quantum dot light-emitting layer 3 and the cathode layer 5 .

[0113] The material of the electron transport layer 4 includes inorganic materials and / or organic materials, and the inorganic material is selected from at least one of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic material is selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds. In this embodiment, the material of the electron transport layer 4 adopts ZnO ethanol solution.

[0114] In this embodiment, the photoelectric device is an upright photoelectric device, and the structure of the photoelectric device is anode layer 1 / hole functional layer 2 / quantum dot light-emitting layer 3 / electron transport layer 4 / cathode layer 5. In other embodiments, the photoelectric device can also be an inverted photoelectric device, and the structure of the photoelectric device is cathode layer 5 / electron transport layer 4 / quantum dot light-emitting layer 3 / hole functional layer 2 / anode layer 1.

[0115] See also Figure 2 As shown, the embodiment of the present application also provides a method for preparing an optoelectronic device, comprising the following steps:

[0116] Step S10, providing a substrate.

[0117] In this embodiment, the substrate in step S10 may be a glass substrate.

[0118] Step S20, forming an anode layer on the substrate.

[0119] In this embodiment, the anode layer may be formed by evaporation, sputtering or chemical etching in step S20; for example, the anode layer may be formed on the substrate by chemical etching to form an ITO / Ag / ITO substrate.

[0120] Step S30, forming a hole functional layer on the anode layer.

[0121] In this embodiment, the hole functional layer includes a hole injection layer and a hole transport layer. In this embodiment, in step S30, the hole injection layer can be formed on the anode layer by spin coating, inkjet printing or scraping, and the hole transport layer can be formed on the hole injection layer by spin coating, inkjet printing or scraping.

[0122] Step S40, forming a photoelectric functional layer on the hole functional layer.

[0123] In this embodiment, in step S40, the inorganic nanomaterial can be formed into an inorganic nanomaterial layer on the hole functional layer by spin coating, inkjet printing or scraping; the inorganic nanomaterial layer and the borneol ester modified material are placed in a negative pressure sealing cavity to allow the borneol ester modified material to penetrate into the inorganic nanomaterial layer; after the inorganic nanomaterial layer is allowed to stand in the negative pressure sealing cavity for a certain period of time, a composite film is obtained to be used as a quantum dot light-emitting layer.

[0124] Step S50, forming an electron transport layer on the photoelectric functional layer.

[0125] In this embodiment, in step S50, an electron transport layer is formed on the quantum dot light-emitting layer by evaporation, sputtering or chemical etching. In other embodiments, when there is no need to form an electron transport layer, step S50 can be omitted, and a cathode layer can be directly formed on the quantum dot light-emitting layer.

[0126] Step S60, forming a cathode layer on the electron transport layer.

[0127] In this embodiment, in step S60, a cathode layer is formed on the electron transport layer by evaporation, sputtering or chemical etching.

[0128] The photoelectric functional layer of the photoelectric device prepared by the preparation method of the photoelectric device provided in the embodiment of the present application adopts the above-mentioned composite film to improve the film uniformity of the photoelectric functional layer and the hole mobility in the photoelectric functional layer, thereby increasing the number of hole injections in the photoelectric functional layer, balancing the charge of the photoelectric functional layer, and further improving the luminous efficiency of the photoelectric device.

[0129] An embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0130] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0131] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0132] Composite film embodiment 1

[0133] Step (1), providing a substrate;

[0134] Step 2: In N 2In a glove box environment, a 20 mg / ml ligand-exchanged CdSe / CdS red quantum dot OCT (n-octane) solution was spin-coated on the hole transport layer, and heated at 100° C. for 5 min to form a 20 nm thick quantum dot light-emitting layer;

[0135] Step (3): place the quantum dot light-emitting layer and 1 mL of isobornyl acrylate solution in a 1×10 -4 Pa vacuum chamber at 30° C. for 20 minutes to allow the quantum dot light-emitting layer to absorb the isobornyl acrylate solution to form the composite film.

[0136] Composite film embodiment 2

[0137] The difference between this embodiment and embodiment 1 is that in step (3), the quantum dot light-emitting layer and 1 mL of L-bornyl acetate solution are placed in a 1×10 -4 Pa vacuum chamber at 30°C for 20 min to allow the quantum dot light-emitting layer to absorb the L-bornyl acetate solution.

[0138] Composite film embodiment 3

[0139] The difference between this embodiment and embodiment 1 is that in step (3), the quantum dot light-emitting layer and 1 mL of isobornyl acrylate solution are placed in a 1×10 -4 Pa vacuum chamber at 30° C. for 5 minutes to allow the quantum dot light-emitting layer to absorb the isobornyl acrylate solution to form the composite film.

[0140] Composite film embodiment 4

[0141] The difference between this embodiment and embodiment 1 is that in step (3), the quantum dot light-emitting layer and 1 mL of isobornyl acrylate solution are placed in a 1×10 -4 Pa vacuum chamber at 30° C. for 30 minutes to allow the quantum dot light-emitting layer to absorb the isobornyl acrylate solution to form the composite film.

[0142] Composite film comparative example 1

[0143] The difference between this comparative example and Example 1 is that step (3) is omitted.

[0144] Composite film test results analysis:

[0145] The composite thin films prepared in the composite thin film examples 1 to 4 and the composite thin film comparative example 1 were used as quantum dot light-emitting layers to prepare single hole devices (HOD devices), and the hole injection efficiency was tested respectively, and the test results were plotted into a JV curve, as shown in FIG. Figure 4 shown.

[0146] according to Figure 4 As shown, when the output voltage is controlled to be 12V, the current density of the HOD device containing the composite film embodiment 1 is about 125mA / cm 2 The current density of the HOD device containing the composite film Example 2 was about 150 mA / cm 2 The current density of the HOD device containing the composite film Example 3 was about 80 mA / cm 2 The current density of the HOD device containing the composite film Example 4 was about 100 mA / cm 2 The current density of the HOD device containing the composite film comparative example 1 was about 45 mA / cm 2 .

[0147] According to the JV curve diagram of the comparative composite film embodiments 1 to 4 and the composite film comparative example 1, it can be known that under the same output voltage conditions, the current density of the EOD device comprising composite film embodiments 1 to 4 is greater than the current density of the EOD device of composite film comparative example 1. Therefore, it can be known that the hole injection efficiency of the composite film can be improved by adding borneol ester organic materials to inorganic nanomaterials.

[0148] According to the JV curves of the comparative composite film embodiment 1, composite film embodiment 3, and composite film embodiment 4, it can be known that under the same output voltage conditions, the current density of the HOD device containing composite film embodiment 1 is greater than the current density of the HOD device containing composite film embodiment 4, and the current density of the HOD device containing composite film embodiment 4 is greater than the HOD device containing composite film embodiment 3. Therefore, it can be known that the hole injection efficiency of the composite film can be adjusted by adjusting the weight percentage of the borneol ester organic material in the composite film.

[0149] Photoelectric device embodiment 1

[0150] Step (1), providing an ITO / Ag / ITO substrate, spin coating PEDOT:PSS on the ITO / Ag / ITO substrate, and heating at 150° C. for 15 min to form a 30 nm thick hole injection layer;

[0151] Step ⑵, in N 2 In a glove box environment, a TFB solution with a concentration of 8 mg / ml was spin-coated on the hole injection layer, and heated at 150° C. for 15 min to form a 30 nm thick hole transport layer;

[0152] Step (3), forming a quantum dot light-emitting layer on the hole transport layer using the preparation method of the composite thin film embodiment 1;

[0153] Step (4), spin coating a 30 mg / ml ZnO ethanol solution on the quantum dot light-emitting layer, and heating at 100° C. for 5 min to form a 30 nm thick electron transport layer;

[0154] Step (5), forming a 100 nm thick cathode layer on the electron transport layer by evaporation.

[0155] Photoelectric device embodiment 2

[0156] The difference between this embodiment and the optoelectronic device embodiment 1 is that, in step (3), the preparation method of the composite thin film embodiment 2 is adopted to form a quantum dot light-emitting layer on the hole transport layer.

[0157] Photoelectric device embodiment 3

[0158] The difference between this embodiment and the optoelectronic device embodiment 1 is that, in step (3), the preparation method of the composite thin film embodiment 3 is adopted to form a quantum dot light-emitting layer on the hole transport layer.

[0159] Photoelectric device embodiment 4

[0160] The difference between this embodiment and the optoelectronic device embodiment 1 is that, in step (3), the preparation method of the composite thin film embodiment 4 is adopted to form a quantum dot light-emitting layer on the hole transport layer.

[0161] Photoelectric device comparative example 1

[0162] The difference between this embodiment and the optoelectronic device embodiment 1 is that, in the step (3), the preparation method of the composite thin film comparative example 1 is adopted to form a quantum dot light-emitting layer on the hole transport layer.

[0163] Photoelectric efficiency tests and working life tests were performed on the photoelectric devices prepared in the photoelectric device embodiments 1 to 4 and the photoelectric device comparative example 1. The test results are shown in Table 1.

[0164] Among them, the working life test method is as follows: use the FSTAR-FPD optical characteristic measurement equipment with a 24V power supply to drive the device with a 2mA constant current to monitor the brightness decay rate of the optoelectronic device. The photoelectric efficiency test method is as follows: use the CS-2000A brightness meter to measure the brightness of each optoelectronic device; use the FSTAR-FPD optical characteristic measurement equipment with a 24V power supply to drive each optoelectronic device with a voltage from low to high, the voltage range is 0V~5V, the step length is 0.2, and record the current, spectral peak position, peak width, color coordinates and current efficiency (CE) corresponding to each step voltage value after the optoelectronic device reaches the lighting voltage, and select the largest CE value as the performance of the optoelectronic device.

[0165]

[0166] Table 1

[0167] According to the test results of optoelectronic device embodiments 1 to 4 and optoelectronic device team 1, after the quantum dot light-emitting layer is formed, the infiltration of borneol ester modified materials by negative pressure can effectively increase the number of holes injected into the quantum dot light-emitting layer, thereby improving the charge balance within the quantum dot light-emitting layer and improving the luminous efficiency of the optoelectronic device. In addition, it can also extend the service life of the optoelectronic device.

[0168] In summary, combined with Figure 4 It can be seen from the JV curve diagram in and the above-mentioned surface 1 that after the quantum dot light-emitting layer adsorbs the borneol ester modified material, the current density-voltage curve does not change basically, and the quantum dot light-emitting layer adsorbs the borneol ester modified material to improve the hole injection efficiency in the quantum dot light-emitting layer and improve the injection imbalance of electrons and holes in the quantum dot light-emitting layer, thereby improving the device efficiency of the optoelectronic device and extending the device life.

[0169] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A method for preparing a composite film, characterized in that: The following steps are involved: Providing a mixed solution including an inorganic nanomaterial; depositing the mixed solution to form an inorganic nanomaterial layer; The inorganic nano material layer is placed in an atmosphere containing a borneol ester modification material for a first treatment to obtain the composite film.

2. The method for preparing a composite film according to claim 1, characterized in that: The step of placing the inorganic nano material layer in an atmosphere containing a borneol ester modified material for a first treatment comprises: Under negative pressure conditions, the inorganic nano material layer is placed in an atmosphere containing a borneol ester modified material for a first treatment.

3. The method for preparing the composite film according to claim 2, characterized in that: The negative pressure of the negative pressure condition is 1×10 -5 ~1×10 -4 Pa; and / or The temperature of the first treatment is 20-30°C; and / or The first treatment lasts for 5 to 30 minutes.

4. The method for preparing a composite film according to claim 1 or 2, characterized in that: The inorganic nanomaterial includes at least one of a single structure quantum dot and a core-shell structure quantum dot. The material of the single structure quantum dot, the core material and the shell material of the core-shell structure quantum dot are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The shell layer of the core-shell structure quantum dot is one or more layers. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe , CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI group compound includes at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, II The IV group compound includes at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound includes at least one of CuInS2, CuInSe2 and AgInS2; The inorganic nanomaterial further comprises a ligand connected to the surface of the quantum dot, wherein the ligand comprises at least one of an acid ligand, a thiol ligand, an amine ligand, a phosphine ligand, a phospholipid, a soft phospholipid, polyvinyl pyridine, etc.; The acid ligand comprises at least one of decadecanoic acid, undecylenic acid, tetradecanoic acid, oleic acid and stearic acid; and / or The thiol ligand comprises at least one of octadecyl mercaptan, dodecyl mercaptan and octadecyl mercaptan; and / or The amine ligand comprises one or more of oleylamine, octadecylamine and octaamine; and / or The phosphine ligand comprises at least one of trioctylphosphine and trioctylphosphine oxide; and / or The mixed solution further includes a solvent, and the solvent includes at least one of methanol, ethanol, isopropanol, acetone, ethyl acetate, acetonitrile, n-octane, benzene, toluene, cyclohexane, hexane, cyclooctane and octane; and / or The mass concentration of the inorganic nanomaterial in the mixed solution is 20-40 mg / ml; and / or The material of the borneol ester modified material is Among them, R1 is selected from at least one of C1-C5 alkyl or alkenyl groups, and R2 is selected from cycloalkyl groups with 6-15 ring carbon atoms.

5. The method for preparing a composite film according to claim 4, characterized in that: The bornyl ester modified material includes at least one of levorotatory bornyl acetate, isobornyl acrylate, isobornyl methacrylate, isobornyl acetate and bornyl acetate.

6. The method for preparing a composite film according to claim 1, characterized in that: The step of forming the inorganic nano material layer comprises: heat-treating the mixed solution to obtain an inorganic nanomaterial layer including the inorganic nanomaterial; Wherein, the temperature of the heat treatment is 80-120° C.; the time of the heat treatment is 1-10 min.

7. A composite film, characterized in that: Including inorganic nano materials and borneol ester modified materials.

8. The composite film according to claim 7, characterized in that: In the composite film, the weight percentage of the borneol ester modification material is 0.01% to 1%.

9. The composite film according to claim 7, characterized in that: The composite film comprises: an inorganic nano material layer, which comprises an inorganic nano material; and a functional modification layer, which is arranged on the inorganic nano material layer, and comprises an inorganic nano material and a borneol ester modification material.

10. The composite film according to claim 9, characterized in that The thickness ratio of the inorganic nano material layer to the functional modification layer is 1:(1-4).

11. A photoelectric device, characterized in that: include: An anode layer and a cathode layer are arranged opposite to each other; The photoelectric functional layer is arranged between the anode layer and the cathode layer, and the photoelectric functional layer comprises inorganic nanomaterials and borneol ester modified materials.

12. The optoelectronic device according to claim 11, characterized in that: The photoelectric functional layer comprises an inorganic nanomaterial layer and a functional modification layer arranged on the inorganic nanomaterial layer. The inorganic nanomaterial layer comprises an inorganic nanomaterial, and the functional modification layer comprises an inorganic nanomaterial and a borneol ester modification material.

13. The optoelectronic device according to claim 12, characterized in that: The inorganic nanomaterial layer is close to the cathode layer, and the functional modification layer is close to the anode layer; and / or The material of the anode layer and / or cathode layer includes at least one of a metal, a carbon material and a metal oxide, wherein the metal includes at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material includes at least one of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide includes a doped or undoped metal oxide, including at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or includes a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides, wherein the composite electrode includes at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2; and / or The inorganic nanomaterial comprises at least one of single structure quantum dots and core-shell structure quantum dots, the material of the single structure quantum dots, the core material and the shell material of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots is one layer or multiple layers; and / or The material of the borneol ester modified material is Wherein, R1 is selected from at least one of C1-C5 alkyl or alkenyl groups, and R2 is selected from cycloalkyl groups with 6-15 ring carbon atoms; and / or the optoelectronic device further comprises a hole functional layer, wherein the hole functional layer is disposed between the optoelectronic functional layer and the anode layer; the hole functional layer comprises a hole injection layer and a hole transport layer, and the material of the hole injection layer and / or the hole transport layer comprises at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60; and / or The photoelectric device also includes an electron transport layer, which is arranged between the photoelectric functional layer and the cathode layer; the material of the electron transport layer includes inorganic materials and / or organic materials, and the inorganic material is selected from at least one of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped element includes at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; the organic material is selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene compounds, and hydroxyquinoline compounds.

14. A display device, characterized in that: The display device is prepared by comprising the optoelectronic device according to any one of claims 11 to 13.

Images