Cross-flow atomic layer deposition equipment

Abstract

The present invention provides a cross-flow atomic layer deposition device. The device includes an outer cavity, an inner reaction cavity, a cross-flow gas inlet device, a bottom heater and a support fixture; the cross-flow gas inlet device is located on one side of the inner reaction cavity and is communicated with the inner reaction cavity; a bottom surface portion of the inner reaction cavity bulges upward to form a groove, and the bottom heater is at least partially located in the groove and is attached to the bottom surface of the inner reaction cavity; the support fixture includes two clamping blocks, steps extending upward are provided at the outer edges of the top surfaces of the clamping blocks, and a horizontally extending support surface is provided at the bottom of the clamping blocks. The two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces at the bottoms of the two clamping blocks; the stepped surfaces of the clamping blocks are fixed to the bottom surface of the inner reaction cavity by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction cavity, and the gap is communicated with a vacuum pump through a first through hole on the top surface of the clamping block. The present invention helps to improve the uniformity of film deposition.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and particularly to a cross-flow atomic layer deposition equipment. Background Art

[0002] Atomic layer deposition is a method that can deposit substances layer by layer in the form of a single atomic film on the surface of a substrate. It alternately exposes different precursors to the surface of the substrate in a pulsed manner, and thus chemically adsorbs and reacts on the substrate surface to form a thin film.

[0003] Existing atomic layer deposition equipment can be mainly divided into two categories according to the gas inlet direction: top-flow atomic layer deposition equipment and cross-flow atomic layer deposition equipment. The top-flow atomic layer deposition equipment supplies reaction gases into the deposition chamber through a showerhead located at the top of the deposition chamber. The cross-flow atomic layer deposition equipment supplies gases through a gas supply device located on one side of the deposition chamber. The supplied reaction gases diffuse horizontally, enter the deposition chamber through an air inlet on one side of the top of the deposition chamber, and flow through the surface of the substrate to be deposited. The residual gases are discharged through an exhaust port at the bottom of the deposition chamber and on the opposite side of the air inlet.

[0004] In existing cross-flow atomic layer deposition equipment, to ensure that the precursors of the reaction gases can diffuse evenly in the horizontal direction and improve the uniformity of substrate heating, the inner reaction chamber is usually made very small, and the bottom heater is arranged outside the inner reaction chamber. Since the bottom heater is only supported by a support shaft and stands on the bottom surface of the outer part of the inner reaction chamber corresponding to the substrate placement area, after long-term operation, the bottom heater and the inner reaction chamber may be affected by aging and deformation, which will affect the fitting degree and alignment accuracy between the two, thus affecting the coating yield and efficiency.

[0005] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solution of the present invention and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present invention. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a cross-flow atomic layer deposition equipment to solve the problems that in the existing cross-flow atomic layer deposition equipment, the bottom heater is only supported by a support shaft and stands on the bottom surface of the outer part of the inner reaction chamber corresponding to the substrate placement area. After long-term operation, the bottom heater and the inner reaction chamber may be affected by aging and deformation, which will affect the fitting degree and alignment accuracy between the two, thus affecting the coating yield and efficiency.

[0007] To achieve the above and other related objectives, the present invention provides a cross-flow atomic layer deposition device, which includes an outer cavity, and an inner reaction cavity, a cross-flow gas inlet device, a bottom heater, and a support fixture located inside the outer cavity; the cross-flow gas inlet device is located on one side of the inner reaction cavity and is communicated with the inner reaction cavity; the bottom surface of the inner reaction cavity bulges upward to form a groove on the bottom surface of the inner reaction cavity, and the groove corresponds to the placement area of the substrate to be deposited. At least a part of the bottom heater is located in the groove and fits with the bottom surface of the inner reaction cavity; the support fixture includes two clamping blocks. At the outer edge of the top surface of the clamping block, there is a step extending upward, and at the bottom of the clamping block, there is a horizontally extending support surface. The two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces at the bottoms of the two clamping blocks; the step surface of the clamping block and the bottom surface of the inner reaction cavity are fixed by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction cavity, and this gap is communicated with a vacuum pump through a first through hole on the top surface of the clamping block.

[0008] Optionally, the support surface of each clamping block is a fan-shaped surface, and the side surface of the clamping block adjacent to the bottom heater is an arc surface.

[0009] Optionally, the step height of the clamping block is 1 mm - 2 mm, and the width is 3 mm - 5 mm.

[0010] Optionally, a buffer heat insulation layer is provided between the step surface and the bottom surface of the inner reaction cavity.

[0011] Optionally, the side surface of the clamping block connected to the support surface indents inward.

[0012] Optionally, the surface of the clamping block adjacent to the bottom heater is provided with a second through hole communicated with the vacuum pump.

[0013] Optionally, the size of the groove is larger than the size of the bottom heater, and an elastic electromagnetic induction coil is wound around the circumference of the bottom heater located in the groove.

[0014] Optionally, the cross-flow atomic layer deposition device further includes a heat insulation and heat preservation layer arranged outside the inner reaction cavity.

[0015] In another alternative, the cross-flow atomic layer deposition device further includes a carrier table and a rotating shaft. The carrier table corresponds to the placement area inside the inner reaction cavity. The rotating shaft is connected to the bottom surface of the carrier table and sequentially passes through the bottom surface of the inner reaction cavity and the through hole in the middle of the clamping block until it is connected to a driving component.

[0016] Optionally, the cross-flow atomic layer deposition device further includes a balance weight, and the balance weight is arranged on the rotating shaft and is spaced below the bottom heater.

[0017] As described above, the cross-flow atomic layer deposition equipment provided by the present invention has the following beneficial effects: The cross-flow atomic layer deposition equipment provided by the present invention sets the bottom heater outside the inner reaction chamber and fixes it through a specially designed support fixture, which helps to miniaturize the inner reaction chamber while ensuring a good fit between the bottom heater and the bottom surface of the inner reaction chamber, helps to improve the heating efficiency and heating uniformity, thereby helping to improve the film deposition uniformity and reduce the equipment usage cost. The stepped surface of the bottom heater and the bottom surface of the inner reaction chamber are fixed with screws, and the gap between the clamping block and the bottom surface of the inner reaction chamber is connected to the vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects caused by thermal deformation of the equipment and helps to extend the service life of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 Shown is a schematic cross-sectional structure diagram of the cross-flow atomic layer deposition equipment provided by the present invention in an example.

[0019] Figures 2 to 4 Shown are schematic structure diagrams of the clamping block of the cross-flow atomic layer deposition equipment provided by the present invention presented in different directions.

[0020] Figure 5 Shown is a schematic partial cross-sectional structure diagram of the cross-flow atomic layer deposition equipment provided by the present invention in Embodiment 2. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] The following specific examples illustrate the embodiments of the present invention. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. When detailing the embodiments of the present invention, for ease of explanation, the cross-sectional views showing the device structure will be enlarged locally out of the general proportion, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0022] It should be noted that the drawings provided in this embodiment only illustrate the basic concept of the present invention schematically. Therefore, only the components related to the present invention are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex. To make the drawings as concise as possible, not all structures are labeled in each drawing.

[0023] Embodiment 1

[0024] As Figures 1 to 4As shown in the figure, the present invention provides a cross-flow atomic layer deposition device, which includes an outer cavity 11, and an inner reaction cavity 13, a cross-flow intake device 14, a bottom heater 15 and a support fixture located inside the outer cavity 11.

[0025] The outer cavity 11 can isolate the inner reaction cavity 13 from the external environment. Usually, a wafer inlet and outlet channel 111 is provided on the side wall of the outer cavity 11, and an exhaust port communicating with the exhaust device 12 is provided at the bottom of the outer cavity 11. Through the operation of the exhaust device 12, the internal control of the outer cavity 11 is maintained at the required vacuum level.

[0026] The inner reaction cavity 13 provides a deposition space, and its top cover and annular side wall can be connected in an openable and closable manner through a connecting member 131 located on one side of the cavity. In this structure, the wafer can be taken and placed by opening the top cover of the inner reaction cavity 13. Usually, a top heater 132 is provided on the top cover, and the top heater 132 can extend from the top cover to the side wall of the inner reaction cavity 13. The top heater 132 is, for example, formed by winding heating resistance wires or is a graphite heater.

[0027] The cross-flow intake device 14 is located on one side of the inner reaction cavity 13 and is communicated with the intake port of the inner reaction cavity 13, and is used to fill the reaction gas into the inner reaction cavity 13 horizontally along the side surface of the inner reaction cavity 13. That is, the reaction gas is diffused onto the substrate of the inner reaction cavity 13 in a transverse flow manner. The exhaust port of the inner reaction cavity 13 is usually provided at the bottom on the other side corresponding to the cross-flow intake device 14, and the inner reaction cavity 13 and the outer cavity 11 can be connected to the same exhaust device 12. Through the cooperation of the cross-flow intake device 14 and the exhaust device 12, the reaction gas flow is guided to flow horizontally through the substrate surface, and the residual gas is discharged through the exhaust port. In some examples, the cross-flow intake device 14 may include a mixer for mixing the reaction precursor and the inert gas and a diffuser for further diffusing the gas flow containing the precursor.

[0028] In this embodiment, the bottom surface of the inner reaction chamber 13 bulges upward to form a groove with a downward opening on the bottom surface of the inner reaction chamber 13. The groove corresponds to the placement area of the substrate to be deposited, and the substrate is, for example, a wafer. Therefore, a generally disk-shaped boss is formed on the bottom surface of the inner reaction chamber 13 corresponding to the wafer placement area. This boss can directly serve as a stage for placing the wafer, and the wafer is directly placed on this boss for thin film deposition. That is, in this embodiment, the stage for the wafer is formed by the upward bulge of the bottom surface of the inner reaction chamber 13. The stage and the cavity of the inner reaction chamber 13 are integrated. Or rather, in this embodiment, there is no need to additionally provide a structural member for carrying the wafer, which helps to simplify the equipment structure, reduce the equipment cost, and enables the inner reaction chamber 13 to be further miniaturized. It is more conducive to the control of the cavity temperature and the uniform diffusion of the reaction gas flow in the horizontal direction, which helps to improve the uniformity of thin film deposition. When the stage for carrying the wafer is formed by the upward bulge of the bottom surface of the inner reaction chamber 13, the material of the cavity of the inner reaction chamber 13 needs to be selected as a material that is compatible with the process and has good heat conduction performance, such as aluminum alloy, titanium alloy, etc. The inner reaction chamber 13 can be integrally processed from the same material, or the part corresponding to the boss can be prepared from a material with better heat conduction and heat resistance performance than other positions. There is no strict limitation on this.

[0029] As the name implies, the bottom heater 15 is located at the bottom of the inner reaction chamber 13 and at least partially located in the groove. It is attached to the bottom surface of the inner reaction chamber 13 to directly heat the wafer placement area. Compared with the existing solution of setting the heater inside the cavity, it helps to reduce the volume of the inner reaction chamber 13. Preferably, the size of the groove is slightly larger than the size of the bottom heater 15, so that there is a gap between the side surface of the bottom heater 15 and the side surface of the groove. This helps to reduce the friction between the heater and the side surface of the groove when installing the bottom heater 15 into the groove, and enables the bottom heater 15 to still be placed in the groove even if the bottom surface of the inner reaction chamber 13 undergoes slight deformation due to long-term heating.

[0030] The support fixture includes two clamping blocks 16. At the outer edge of the top surface 167 of the clamping block 16, there is a step 161 extending upward, that is, the step 161 is higher than the top surface of the clamping block 16. The bottom of the clamping block 16 is provided with a horizontally extending support surface 162, and this support surface 162 is used to support the bottom heater 15. The two clamping blocks 16 are arranged at opposite ends of the bottom heater 15, and the bottom heater 15 is supported by the support surfaces 162 at the bottoms of the two clamping blocks 16. The bottom of the bottom heater 15 is fixed on the support surfaces 162 at the bottoms of the two clamping blocks 16. Therefore, in this embodiment, the bottom heater 15 is not in contact with the bottom surface of the outer cavity. The bottom of the clamping block 16 can be directly in contact with the inner bottom surface of the outer cavity 11 or fixed inside the outer cavity 11 through the connection of other connecting parts. The surface of the step 161 of the clamping block 16 is fixed to the bottom surface of the inner reaction chamber 13 by screws. Therefore, a plurality of screw holes 163 are provided on the surface of the step 161. For example, the screw can penetrate the support block from bottom to top and be embedded into the screw hole on the bottom surface of the inner reaction chamber 13, that is, the screw does not extend into the interior of the inner reaction chamber 13 and will not affect the vacuum degree inside the chamber. In the case where the two are fixed by screws, by adjusting the depth of the screw embedded into the inner reaction chamber 13, the levelness of each clamping block 16 can be adjusted, and thus the levelness of the bottom heater 15 can be adjusted, so that the bottom heater 15 can better fit the bottom surface of the inner reaction chamber 13 (the bottom surface of the inner reaction chamber 13 may be bent and deformed under a long-term heating environment, resulting in an uneven groove surface), which helps to improve the heating stability. And in this embodiment, since the clamping block 16 is connected and fixed to the bottom of the inner reaction chamber 13 through the step 161 surface higher than the top surface of the clamping block 16 (the top surface 167 refers to the other surface areas of the top of the clamping block 16 except the surface of the step 161), there is a gap 164 between the top surface 167 of the clamping block 16 and the bottom surface of the inner reaction chamber 13. This gap 164 is communicated with the vacuum pump through the first through hole 165 on the top surface 167 of the clamping block 16. By exhausting the vacuum pump, it is avoided that impurity particles enter this gap and then adhere to the bottom surface of the inner reaction chamber 13, which affects the heating uniformity of the chamber. In addition, when the bottom surface of the chamber is deformed due to deformation, the power of the vacuum pump can be adjusted to adjust the negative pressure adsorption force on the bottom surface of the chamber to perform a certain shaping and repair on the bottom surface of the chamber. In some other examples, if necessary, heated inert gas can also be introduced into this gap through the vacuum pump, which can play a certain heat preservation role for the bottom of the inner reaction chamber 13.

[0031] The horizontal-flow atomic layer deposition equipment provided in this embodiment has the bottom heater arranged outside the inner reaction chamber and fixed by a specially designed support fixture. This helps to miniaturize the inner reaction chamber while ensuring good fit between the bottom heater and the bottom surface of the inner reaction chamber, improving the heating efficiency and heating uniformity, and thus contributing to enhancing the film deposition uniformity. The bottom surface of the inner reaction chamber bulges upward to form a wafer-bearing stage without the need for an additional independent stage, which not only reduces the equipment components, but also enables the bottom heater to directly heat the stage. Moreover, the inner reaction chamber can be made very small, so only a relatively small heating power is required to achieve a good heating effect, helping to reduce the equipment usage cost. The stepped surface of the bottom heater and the bottom surface of the inner reaction chamber are fixed with screws, and the gap between the clamping block and the bottom surface of the inner reaction chamber is connected to a vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects caused by thermal deformation of the equipment and extend the service life of the equipment.

[0032] The bottom heater 15 can be of the same type as the top heater 132. For example, both can be made of heating wire resistance wire wound, or be a graphite heater. In some examples, a heat insulation material layer such as graphite felt can be provided on the outer peripheral surface of the bottom heater 15.

[0033] The clamping block 16 can be a metal block or other non-metal block with relatively good mechanical strength, such as a ceramic block, and is particularly preferably made of a material with relatively good heat insulation effect. In a preferred example, the support surface 162 of each clamping block 16 is a fan-shaped surface, and the side surface of the clamping block 16 adjacent to the bottom heater 15 is an arc surface 168 to provide better support for the bottom heater 15. The support surface 162 can be further set as a semi-circular surface so that the bottom surface of the bottom heater 15 completely lies on the two support surfaces 162, and the arc surfaces 168 of the two clamping blocks 16 circumferentially wrap the bottom heater 15, helping to reduce heat dissipation. However, the arc surface 168 is preferably not in contact with the bottom heater 15, that is, a gap is also formed between the two. In some examples, heat insulation materials can be provided on the circumference of the clamping block 16 corresponding to the bottom heater 15 to reduce heat dissipation.

[0034] The height of the step 161 of the clamping block 16 is preferably 1 mm - 2 mm, and the width is preferably 3 mm - 5 mm. In some examples, a buffer heat insulation layer is provided between the surface of the step 161 and the bottom surface of the inner reaction chamber 13. This buffer heat insulation layer is a material layer with relatively good heat insulation effect and can be elastically compressed to a certain extent, such as graphite felt, which not only helps to reduce heat dissipation, but also plays a buffer protection role for the inner reaction chamber 13.

[0035] The shape of the clamping block 16 can be flexibly set as long as it can be fixed to the bottom of the inner reaction chamber 13 and provide good supporting force. In some examples, the side of the clamping block 16 connected to the supporting surface 162 indents inward, or rather, the surface area of its top surface is larger than that of its bottom surface. Thus, as shown in Figures 2 to 4 during the process of extending from the top surface to the bottom surface, an inclined surface that slopes inward is formed, which can reduce the occupied space of the clamping block 16, and a space for accommodating other deposition components is formed around the corresponding inclined surface. And the inclined surface can be made into an arc-shaped curved surface.

[0036] In some examples, a second through hole 166 communicating with the vacuum pump is provided on the surface of the clamping block 16 adjacent to the bottom heater 15. The first through hole 165 and the second through hole 166 are preferably connected to the same vacuum pump, and this vacuum pump preferably also serves as an exhaust device at the same time. Connecting the second through hole 166 to the vacuum pump can remove the impurity particles falling between the gaps of the two, and can make the bottom heater 15 more firmly located on the clamping block 16.

[0037] As described above, the size of the groove is preferably larger than that of the bottom heater 15. Thus, there is a gap between the side surface of the bottom heater 15 and the side surface of the groove. In some examples, within this gap, that is, an elastic electromagnetic induction coil 21 is wound circumferentially around the bottom heater 15 located in the groove (which can be combined with the schematic diagram in Figure 5 ). The elastic electromagnetic induction coil 21 has multiple functions. For example, its elasticity can play a buffering role, reduce the friction between the bottom heater 15 and the inner reaction chamber 13, and help prevent the bottom heater 15 from tilting. In addition, when needed, the elastic electromagnetic induction coil 21 can be energized, and the heating efficiency of the inner reaction chamber 13 can be further improved through electromagnetic induction heating.

[0038] To ensure that the inside of the inner reaction chamber 13 is maintained at the required process temperature and reduce heat loss, in some examples, the cross-flow atomic layer deposition equipment further includes a heat insulation and preservation layer provided on the periphery of the inner reaction chamber 13. The heat insulation and preservation layer can have a solid hardware structure. For example, the aforementioned graphite soft felt is used to wrap the outer surface of the inner reaction chamber 13. In some other examples, heated inert gas can be introduced into the outer cavity 11, and this inert gas flow 22 wraps around the periphery of the inner reaction chamber 13, which can also play a role in heat insulation and preservation, and can better isolate the inner reaction chamber 13 from the external environment.

[0039] In this embodiment, the wafer carrier is formed by protruding upward from the bottom surface of the inner reaction chamber 13. The advantage is that the equipment structure is relatively simpler, and the disadvantage is that it is inconvenient to rotate the wafer. For example, an external rotation component needs to be used to rotate the wafer, which is not very beneficial for depositing large-sized wafers. Therefore, the present invention provides another solution.

[0040] Example Two

[0041] As Figure 5 shown, this embodiment provides a cross-flow atomic layer deposition device with another structure. For the cross-flow atomic layer deposition device provided in this embodiment, the bottom surface of the inner reaction chamber 13 also bulges upward to form a groove, and the bottom heater 15 is located in this groove and is supported and fixed by the clamping block 16. However, in this embodiment, a carrier table 17 and a rotating shaft 18 are additionally provided inside the inner reaction chamber 13. The carrier table 17 correspondingly locates in the placement area inside the inner reaction chamber 13, that is, it fits with the aforementioned convex table surface. The rotating shaft 18 is connected to the bottom surface of the carrier table 17, and sequentially passes through the bottom surface of the inner reaction chamber 13 and the through hole in the middle of the clamping block 16 until it is connected to the driving component 19 outside the device. The driving component 19 is, for example, a rotating component including a servo motor. In addition, it can also include a lifting structure for driving the carrier table 17 to lift. That is, the carrier table 17 in this embodiment exists independently of the cavity of the inner reaction chamber 13. The material of the carrier table 17 is determined according to the process. For example, it is a metal material such as aluminum, or a non-metal material such as silicon carbide or aluminum nitride. The carrier table 17 can fix the wafer based on electrostatic adsorption or vacuum adsorption. Therefore, electrodes or vacuum pipelines can be correspondingly arranged in the carrier table 17, and the corresponding conductive wires and vacuum pipelines extend to the outside of the device via the rotating shaft 18. When the carrier table 17 is independently arranged, the thickness of the carrier table 17 and the rotating shaft 18 part are as small as possible to reduce the adverse effect on wafer heating. Because if the carrier table 17 is too thick, it will affect the heating effect, and if the rotating shaft 18 is too thick, it means that the area where the bottom heater 15 fits with the bottom surface of the inner reaction chamber 13 is small, affecting the heating efficiency and uniformity.

[0042] In this embodiment, by providing a carrier table 17 independent of the bottom surface of the inner reaction chamber 13 and a driving component that can drive the carrier table 17 to rotate, the wafer can be driven to rotate during the deposition process, which helps to improve the uniformity of thin film deposition.

[0043] As mentioned above, to reduce the adverse effect on heating, the rotating shaft 18 should be made as small as possible, but this may affect the stability during rotation and endanger the safety of the wafer. Therefore, in a preferred example, the cross-flow atomic layer deposition device further includes a balance weight 20. The balance weight 20 is arranged on the rotating shaft 18 and is spaced below the bottom heater 15 at an interval that does not affect the lifting of the carrier table 17. The balance weight 20 can be sleeved on the rotating shaft 18 in a threaded fit manner, or fixed to the rotating shaft 18 through the connection of fasteners such as screws. The balance weight 20 can be a stainless steel block or a graphite block, and its weight can be determined according to the size of the rotating shaft 18 and the mass of the carrier table 17. In addition to the balancing effect, arranging the balance weight 20 below the bottom heater 15 also helps to reduce the heat dissipation of the bottom heater 15.

[0044] Except for the settings of the carrier stage and the rotating shaft, the settings of other structures of the atomic layer deposition equipment in this embodiment are the same as those in Embodiment 1. For details, please refer to the description in Embodiment 1. For the sake of brevity, they will not be elaborated here.

[0045] In summary, the present invention provides a cross-flow type atomic layer deposition equipment, which includes an outer cavity, and an inner reaction cavity, a cross-flow intake device, a bottom heater and a support fixture located inside the outer cavity; the cross-flow intake device is located on one side of the inner reaction cavity and is communicated with the inner reaction cavity; the bottom surface of the inner reaction cavity bulges upward to form a groove on the bottom surface of the inner reaction cavity, and the groove corresponds to the placement area of the substrate to be deposited. The bottom heater is at least partially located in the groove and is attached to the bottom surface of the inner reaction cavity; the support fixture includes two clamping blocks. At the edge of the outer side of the top surface of the clamping block, there is a step extending upward, and at the bottom of the clamping block, there is a horizontally extending support surface. The two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces at the bottoms of the two clamping blocks; the step surface of the clamping block and the bottom surface of the inner reaction cavity are fixed by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction cavity, and this gap is communicated with a vacuum pump through a first through hole on the top surface of the clamping block. The cross-flow type atomic layer deposition equipment provided by the present invention arranges the bottom heater outside the inner reaction cavity and fixes it through a specially designed support fixture, which helps to miniaturize the inner reaction cavity and at the same time helps to ensure good attachment of the bottom heater to the bottom surface of the inner reaction cavity, helps to improve the heating efficiency and heating uniformity, thereby helps to improve the film deposition uniformity and reduce the equipment use cost. The step surface of the bottom heater and the bottom surface of the inner reaction cavity are fixed by screws, and the gap between the clamping block and the bottom surface of the inner reaction cavity is connected to the vacuum pump. Through these ingenious designs, it helps to reduce the adverse effects brought by thermal deformation of the equipment and helps to extend the service life of the equipment.

[0046] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0047] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A cross-flow atomic layer deposition device, characterized in that, The cross-flow atomic layer deposition equipment includes an outer cavity, and an inner reaction cavity, a cross-flow gas inlet device, a bottom heater and a support fixture located inside the outer cavity; the cross-flow gas inlet device is located on one side of the inner reaction cavity and is communicated with the inner reaction cavity; the bottom surface of the inner reaction cavity bulges upward to form a groove on the bottom surface of the inner reaction cavity, the groove corresponds to the placement area of the substrate to be deposited, the bottom heater is at least partially located in the groove and fits with the bottom surface of the inner reaction cavity; the support fixture includes two clamping blocks, steps extending upward are arranged at the outer edges of the top surfaces of the clamping blocks, and a horizontally extending support surface is arranged at the bottom of the clamping blocks. The two clamping blocks are arranged at opposite ends of the bottom heater, and the bottom of the bottom heater is fixed on the support surfaces at the bottoms of the two clamping blocks; the stepped surfaces of the clamping blocks are fixed to the bottom surface of the inner reaction cavity by screws, and there is a gap between the top surface of the clamping block and the bottom surface of the inner reaction cavity, and this gap is communicated with a vacuum pump through a first through hole on the top surface of the clamping block.

2. The cross-flow type atomic layer deposition equipment according to claim 1, wherein The support surface of each clamping block is a fan-shaped surface, and the side surface of the clamping block adjacent to the bottom heater is an arc surface.

3. The cross-flow type atomic layer deposition equipment according to claim 1, characterized in that, The step height of the clamping block is 1 mm - 2 mm, and the width is 3 mm - 5 mm.

4. The cross-flow type atomic layer deposition equipment according to claim 1, wherein A buffer heat insulation layer is arranged between the stepped surface and the bottom surface of the inner reaction cavity.

5. The cross-flow type atomic layer deposition equipment according to claim 1, characterized in that, The side surface of the clamping block connected to the support surface indents inward.

6. The cross-flow type atomic layer deposition equipment according to claim 1, characterized in that, The surface of the clamping block adjacent to the bottom heater is provided with a second through hole communicated with the vacuum pump.

7. The cross-flow atomic layer deposition equipment according to claim 1, characterized in that The size of the groove is larger than the size of the bottom heater, and an elastic electromagnetic induction coil is wound around the circumference of the bottom heater located in the groove.

8. The cross-flow type atomic layer deposition equipment according to claim 1, characterized in that The cross-flow atomic layer deposition equipment further includes a heat insulation and heat preservation layer arranged outside the inner reaction cavity.

9. The cross-flow type atomic layer deposition equipment according to any one of claims 1 to 8, characterized in that, The cross-flow atomic layer deposition equipment further includes a carrier table and a rotating shaft. The carrier table corresponds to the placement area located inside the inner reaction cavity. The rotating shaft is connected to the bottom surface of the carrier table and sequentially passes through the bottom surface of the inner reaction cavity and the through hole in the middle of the clamping block until it is connected to a driving component.

10. The cross-flow type atomic layer deposition equipment according to claim 9, characterized in that, The cross-flow atomic layer deposition equipment further includes a balance weight. The balance weight is arranged on the rotating shaft and is spaced below the bottom heater.

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