Temperature calibration method and temperature measurement system and method for low-temperature semiconductor equipment temperature measurement

Abstract

The present invention provides a temperature calibration method and a temperature measurement system and method for measuring the temperature of low-temperature semiconductor equipment. The light intensity measurement system and the photoelectric measurement system of the temperature calibration method include the same filtering device and both pre-store voltage response functions related to wavelength variation parameters and luminous flux parameters. The light intensity measurement system measures the light intensity of a standard heat source and performs calculation processing to obtain a reference center wavelength of the filtering device. The standard heat source is then controlled to heat up in steps and the photoelectric measurement system performs fitting calculations to obtain wavelength variation parameters and luminous flux parameters. A corrected center wavelength is obtained based on the reference center wavelength and wavelength variation parameters. A new voltage response function #imgabs0# is obtained based on the luminous flux parameters, wavelength variation parameters and corrected center wavelength, thereby reducing or avoiding the problem of inaccurate temperature measurement caused by low thermal radiation intensity during low-temperature measurement and the inevitable temperature measurement inaccuracy caused by the processing accuracy of the filter.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor measurement and control technology, and in particular to a temperature calibration method and a temperature measurement system and method for temperature measurement of low-temperature semiconductor equipment. Background Art

[0002] In the prior art, when using optical methods to measure thermal radiation in the processing chamber of a high-temperature semiconductor device for temperature monitoring, a filter is used to perform bandpass control on the collected thermal radiation to emit light in a specific wavelength band. A photodetector and a host computer are used to convert the optical information of the light in this specific wavelength band into information related to the radiation energy, and the corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0003] Planck's blackbody radiation formula is related to wavelength and temperature. Existing technology uses Planck's blackbody radiation formula to calculate the corresponding measured temperature. The specified wavelength is the center wavelength of the filter. The lower the temperature to be measured, the lower the thermal radiation intensity in the processing chamber, which is not conducive to subsequent signal acquisition and processing. In addition, the processing precision of the filter will inevitably affect the temperature measurement accuracy. Please refer to Figure 1 Taking a filter with a passband range of 800-900 nanometers as comparative example 1, and controlling the temperature of a blackbody furnace, a standard heat source, at 400 degrees Celsius, the thermal radiation from the blackbody furnace, after being filtered by this filter, shows a significant trend of light intensity variation with the passband range. This introduces a more significant systematic error in the temperature measurement process than in higher-temperature measurements, significantly affecting the accuracy of the temperature measurement data. Therefore, a temperature measurement method and system for low-temperature semiconductor equipment are urgently needed to improve the above-mentioned problems.

[0004] Therefore, there is an urgent need for a temperature calibration method and a temperature measurement system and method for measuring the temperature of low-temperature semiconductor equipment to improve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a temperature calibration method and a temperature measurement system and method for measuring the temperature of low-temperature semiconductor equipment, thereby reducing or avoiding the problem of inaccurate temperature measurement caused by low thermal radiation intensity during low-temperature measurement and the inevitable problem of inaccurate temperature measurement caused by the processing precision of the filter.

[0006] In a first aspect, the present invention provides a temperature calibration method for measuring temperature of a low-temperature semiconductor device, comprising: S0: providing a standard heat source, a light intensity measurement system, and a photoelectric measurement system, wherein the light intensity measurement system and the photoelectric measurement system include the same filter device and both have pre-stored voltage response functions. ,in is the wavelength, T is the temperature, F is the luminous flux parameter, is the wavelength variation parameter; S1: obtain the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system and perform light intensity measurement and calculation processing to obtain the reference center wavelength of the filter device S2: Control the standard heat source to heat up in steps to different test set temperatures not exceeding 700 degrees Celsius, and obtain the test voltage information of the test thermal radiation emitted at each test set temperature through the photoelectric measurement system, the reference center wavelength and the voltage response function Perform fitting calculations to obtain the F value and ; S3: According to the F value, the reference center wavelength and stated Get the new voltage response function E(T).

[0007] Optionally, in step S2, the for value, in the step S3, according to the reference center wavelength Value and Corrected central wavelength obtained by summing the values for value, the new voltage response function E(T) is .

[0008] Optionally, after step S3 is completed, perform the following Value correction step: controlling the standard heat source to heat up in steps to different retest set temperatures not exceeding 700 degrees Celsius, and obtaining the retest voltage information and voltage response function E of the retest heat radiation emitted at each retest set temperature through the photoelectric measurement system. Perform fitting calculation to obtain the results under different retest set temperature ranges. value, and the new voltage response function E(T);

[0009] Where T is the temperature, is a fine correction amount of the central wavelength, the temperature difference between adjacent retest set temperatures is smaller than the temperature difference between adjacent test set temperatures, and each retest set temperature range includes at least three retest set temperatures.

[0010] Optionally, the In the value correction step: the new voltage response function E(T) is , where F, The values ​​of C and C2 are obtained through step S2.

[0011] Optionally, the photoelectric measurement system includes a photoelectric detection device, and the light intensity measurement system also pre-stores wavelength response characteristic information of the photoelectric detection device. In step S1, the steps of obtaining, by the light intensity measurement system, thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius and performing light intensity measurement and calculation processing include:

[0012] The spectral response information corresponding to the thermal radiation emitted by the standard heat source at each set temperature is obtained by the light intensity measurement system, and the reference center wavelength of the filter device is calculated based on the wavelength response characteristic information and each spectral response information. .

[0013] Optionally, the wavelength response characteristic information of the photoelectric detection device includes a wavelength response function of the photoelectric detection device. The spectral response information corresponding to the thermal radiation emitted at each set temperature includes the spectral response function corresponding to each thermal radiation , obtaining the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information The steps include:

[0014] According to the wavelength response function and each of the spectral response functions Get the reference wavelength at each set temperature , and then according to the reference wavelength The reference central wavelength is obtained by averaging .

[0015] Optionally, the light intensity measurement system also pre-stores the response wavelength range of the photoelectric detection device ~ , the reference wavelength at each set temperature satisfy:

[0016] ; where dλ is a small increment of wavelength λ.

[0017] Optionally, in step S0, the light intensity measurement system includes a filter device, a light intensity detection device and a main control device, and the photoelectric measurement system includes the filter device, the photoelectric detection device and the main control device, and the main control device pre-stores the initial voltage response function ; The filtering device respectively obtains each of the thermal radiations, each of the test thermal radiations, and each of the retest thermal radiations and emits a single light beam corresponding to a specific wavelength band; the light intensity detection device respectively receives and measures the light intensity of the single light beam corresponding to the specific wavelength band of each of the thermal radiations to obtain the corresponding spectral response information; the photoelectric detection device respectively receives and converts the optical information of the single light beam corresponding to the specific wavelength band of each of the test thermal radiations and each of the retest thermal radiations into corresponding voltage information; the main control device respectively receives and converts the voltage information and the initial voltage response function into corresponding voltage information. Perform the corresponding fitting calculations.

[0018] Optionally, the main control device also pre-stores the wavelength response characteristic information of the photoelectric detection device, so as to calculate the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information. .

[0019] Optionally, the voltage response function (T, F, δ) satisfies:

[0020] .

[0021] Optionally, the temperature difference between adjacent retest set temperatures does not exceed 50 degrees Celsius, and the range of each retest set temperature does not exceed 100 degrees Celsius.

[0022] Optionally, the temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and the temperature range between each adjacent test set temperature includes at least one retest set temperature.

[0023] Optionally, the filtering device includes a long-wave pass filter, and the photoelectric measurement system further includes a photoelectric detection device, so that the combination of the photoelectric detection device and the long-wave pass filter also acts as a band-pass filter.

[0024] Optionally, the operating wavelength range of the photoelectric detection device is 200-1000 nanometers, and the combination of the photoelectric detection device and the long-wave pass filter also acts as a bandpass filter with a bandwidth of not less than 50 nanometers.

[0025] In a second aspect, the present invention provides a temperature measurement system, comprising: a filtering device for receiving the thermal radiation emitted from the low-temperature semiconductor device and emitting a single light beam of a specific wavelength band; a photoelectric detection device, arranged on the light output path of the filtering device or connected to the filtering device to realize optical communication, for receiving and converting the optical information of the single light beam of a specific wavelength band into corresponding voltage information; a main control device, communicatively connected to the photoelectric detection device, and pre-stored with a new voltage response function E(T) obtained by the temperature calibration method described in any one of the first aspects.

[0026] In a third aspect, the present invention provides a temperature measurement method, comprising: providing a low-temperature semiconductor device and the temperature measurement system described in the second aspect; controlling the set temperature in the low-temperature semiconductor device to be no higher than 700 degrees Celsius; receiving the thermal radiation emitted from the low-temperature semiconductor device and emitting a single light beam of a specific wavelength band through a filtering device of the temperature measurement system; receiving and converting the optical information of the single light beam of a specific wavelength band into voltage information through a photoelectric detection device of the temperature measurement system; and obtaining the corresponding measured temperature according to the voltage information and the new voltage response function E(T) through a main control device of the temperature measurement system.

[0027] Compared with the prior art, the temperature calibration method, temperature measurement system and temperature measurement method of the present invention have the following advantages: due to the low energy of thermal radiation emitted from the low-temperature semiconductor device, the luminous flux parameter F and the wavelength variation parameter It will significantly affect the temperature measurement of low-temperature semiconductor equipment. The light intensity measurement system and the photoelectric measurement system of the present invention include the same filter device, and both are pre-stored with F and Related voltage response function According to step S1, the light intensity measurement system obtains the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius and performs light intensity measurement and calculation to obtain the reference center wavelength of the filter device. Then, according to step S2, the standard heat source is controlled to heat up step by step to different test set temperatures not exceeding 700 degrees Celsius, and the test voltage information and reference center wavelength of the test thermal radiation emitted at each test set temperature are obtained through the photoelectric measurement system. and the voltage response function Perform fitting calculations to obtain the F value and , according to the reference central wavelength in step S3 and Get the corrected central wavelength , according to the F value, and corrected central wavelength Get the new voltage response function , by calibrating F and The central wavelength of the filter device can be corrected during the process, which can reduce or avoid the temperature measurement inaccuracy caused by low thermal radiation intensity during low-temperature measurement and the inevitable temperature measurement inaccuracy caused by the processing accuracy of the filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of the curve of the output light intensity and wavelength of the standard heat source at different heating temperatures in Comparative Example 1;

[0029] Figure 2 Schematic diagram of the assembly of the standard heat source, filter device, photoelectric detection device, light intensity detection device and main control device provided in an embodiment of the present invention;

[0030] Figure 3 A schematic diagram of the structure of a temperature measurement and calibration system provided in an embodiment of the present invention;

[0031] Figure 4 A flow chart of a temperature calibration method for low-temperature semiconductor equipment provided by an embodiment of the present invention;

[0032] Figure 5 A graph showing the Q(λ) of the photodetector, the S(λ) of the filter, and the response curve E0(λ) of the photodetector to a received single light beam provided by the present invention;

[0033] Figure 6 A corresponding relationship diagram of corresponding test voltage information under different test set temperatures is obtained in step S2 of an embodiment of the present invention;

[0034] Figure 7 For the embodiment of the present invention In the value correction step, a corresponding relationship diagram of the retest voltage information corresponding to each retest set temperature in the first retest set temperature range;

[0035] Figure 8 For the embodiment of the present invention In the value correction step, a corresponding relationship diagram of the retest voltage information corresponding to each retest set temperature in the second retest set temperature range is provided. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0037] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0038] The present invention provides a processing chamber for low-temperature semiconductor equipment, such as Figure 2 The process chamber of the vapor phase growth equipment shown in FIG. The temperature measurement system composed of the filter device 12, the photoelectric detection device 14, and the main control device 15 is arranged in Figure 2 The process chamber shown. Specifically, the filter device 12 is disposed on an optical window (not shown) located on the spray device 16. It receives thermal radiation from the process chamber through the spray holes 17 of the spray device 16 and the optical window, and emits light of a specific wavelength. After receiving the thermal radiation, the filter device allows light of a specific wavelength to pass through. Its selection depends on the wavelength range of the thermal radiation emitted by the temperature-measured structure. For example, in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, the susceptor 19 supporting the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and a Group III metal organic compound gas and a Group V hydride gas are supplied to the substrate 18 via the spray device 16. The Group III metal organic compound gas and the Group V hydride gas decompose and react near the substrate surface, depositing on the substrate surface to form a semiconductor film. Semiconductor films of different compositions emit thermal radiation of different wavelengths at a given temperature. In some specific embodiments, a heater is provided under the base 19 to heat the base 19 , and the base 19 transfers heat to the substrate 18 so that the temperature of the substrate 18 reaches the reaction temperature requirement.

[0039] Photoelectric detection device 14 is electrically connected to filter device 12, receives light of a specific wavelength band, and converts the optical information of the specific wavelength band into electrical information, such as voltage information. Main control device 15 is electrically connected to photoelectric detection device 14, and calculates the test temperature based on a pre-stored voltage-temperature function and the received voltage information.

[0040] In the embodiment of the present invention, the photoelectric measurement system composed of the filter device 12, the photoelectric detection device 14 and the main control device 15 is a radiation temperature measurement system.

[0041] In some embodiments, the filter device 12 is a filter.

[0042] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted through the optical window of the process chamber is converged by the lens and then filtered to emit light of a specific wavelength band.

[0043] In some embodiments, the filter device 12 comprises a focusing portion and a filtering portion, which are connected by an optical fiber. The focusing portion includes a lens for concentrating thermal radiation emitted through the optical window of the process chamber. The filtering portion includes a filter that receives and filters the light beam emitted by the focusing portion before emitting light of a specific wavelength band.

[0044] In some embodiments, the filter device 12 further includes a focusing portion disposed on the light path of the filter portion or the filter, for focusing the light of a specific wavelength band emitted by the filter portion or the filter.

[0045] In some embodiments, the photodetection device 14 is a photodetector.

[0046] In some embodiments, the main control device 15 is a host computer.

[0047] Under low-temperature temperature measurement, the intensity of thermal radiation is relatively weak. If a bandpass filter is used, the bandwidth of the bandpass filter is too wide, which is easy to introduce more noise and aggravate the adverse effects on the temperature measurement accuracy; if the bandpass is narrow, it is easy to lose thermal radiation information, which will also aggravate the adverse effects on the temperature measurement accuracy. Considering that for the temperature measurement of low-temperature semiconductor equipment, the selection of bandpass filters is greatly restricted and it is not easy to match a suitable bandpass filter, in some embodiments of the present invention, the filter is a long-wave pass filter. By utilizing the combination of a long-wave pass filter and a photoelectric detection device, the photoelectric detection device can not only receive the specific wavelength band light emitted by the long-wave pass filter and test its voltage information, but also play the role of a bandpass filter. For example, after the thermal radiation emitted by a standard heat source at 600 degrees Celsius passes through the filter, its response curve S (λ) is as follows Figure 5 The filter shown is a long-wave pass filter. The response curve of the photoelectric detection device to the light emitted by the filter is as follows: Figure 5 As shown in E0(λ), it presents a square wave with a certain bandwidth.

[0048] In some embodiments, the photoelectric detection device and the long-wave pass filter combination also functions as a band-pass filter with a bandwidth of not less than 50 nanometers.

[0049] In some embodiments, the operating wavelength range of the photodetection device is 200-1000 nanometers.

[0050] The bandwidth of the filter determines the spectral range of radiation that passes through, while the operating wavelength range of the photodetector determines the spectral range in which it can effectively respond. A good match between the spectral characteristics of the two ensures the accuracy of temperature measurement.

[0051] In view of the problems existing in the existing technology, such as Figure 4 As shown, the first embodiment provides a temperature calibration method for low-temperature semiconductor equipment, comprising:

[0052] S0: Provide a standard heat source, a light intensity measurement system and a photoelectric measurement system. The light intensity measurement system and the photoelectric measurement system contain the same filter device and both have pre-stored voltage response functions. ,in is the temperature, is the luminous flux parameter, is the wavelength variation parameter;

[0053] S1: Obtain the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system and perform light intensity measurement and calculation processing to obtain the reference central wavelength of the filter device value;

[0054] S2: Control the standard heat source to heat up in steps to different test set temperatures not exceeding 700 degrees Celsius, and obtain the test voltage information of the test thermal radiation emitted at each test set temperature and the reference center wavelength through the photoelectric measurement system. and the voltage response function Perform fitting calculations to obtain Value and ;

[0055] S3: According to the reference central wavelength and stated Get the corrected central wavelength , according to the F value and the corrected central wavelength Get the new voltage response function .

[0056] In step S2 of some embodiments, the for value, in the step S3, according to the reference center wavelength Value and Corrected central wavelength obtained by summing the values for value.

[0057] In step S2 of some embodiments, the voltage response function used is Satisfies formula 1:

[0058] .

[0059] In some examples, the test set temperature range T1-T n When the test voltage information at each temperature obtained in step S2 is known information, they are , the F value can be calculated by solving the following equations, Value and C2 value:

[0060]

[0061] In some embodiments, in step S3, according to the reference central wavelength Value and Corrected central wavelength obtained by summing the values for value, the new voltage response function E(T) is .

[0062] In some embodiments, when the temperature measurement range of the low-temperature semiconductor device is relatively wide, considering that the change in temperature will cause the wavelength of the thermal radiation to shift, the wavelength will shift toward the long-wave direction when the temperature rises, and the wavelength will shift toward the short-wave direction when the temperature drops. During the temperature measurement process, even if the temperature balance in the standard heat source (such as a blackbody furnace) reaches a steady state, its temperature will still fluctuate to a certain extent, and the lower the temperature, the more serious this fluctuation is. Therefore, this wavelength change can be used as a consideration in the correction formula, and the wavelength can be adjusted separately in each narrow temperature range. Therefore, after the step S2 is completed, the following steps are performed: The value correction step is performed, and then the step S3 is performed. The value correction step includes: controlling the standard heat source to heat up in steps to different retest set temperatures not exceeding 700 degrees Celsius, obtaining through the photoelectric measurement system and the retest voltage information of the retest heat radiation emitted at each retest set temperature and the voltage response function E Perform fitting calculation to obtain the results under different retest set temperature ranges. value; according to The values ​​are respectively The sum of the values ​​is the new Values, and the corresponding new values ​​under the different retest setting temperature ranges The value is used as the wavelength variation parameter-temperature range correspondence; where T is the temperature, is a fine correction amount of the central wavelength, the temperature difference between adjacent retest set temperatures is smaller than the temperature difference between adjacent test set temperatures, and each retest set temperature range includes at least three retest set temperatures.

[0063] In some embodiments, for .

[0064] In some embodiments, The new voltage response function E(T) obtained after the value correction step is , where F, and The value of is obtained through step S2.

[0065] In other examples, a retest set temperature range - For example, The test voltage information at each temperature obtained in the value correction step is E11, E12, ..., E1n, which are all known information. is an unknown number, The value is the value of step S2 The corresponding value under the set temperature range of the retest can be solved by the following equations Value, that is to The average of the sum.

[0066]

[0067] Among them, F and C2 are the values ​​solved in step S2.

[0068] In some embodiments, the temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and the temperature range between each adjacent test set temperature includes at least one retest set temperature.

[0069] In some embodiments, the temperature difference between adjacent retest set temperatures does not exceed 50 degrees Celsius, and the range of each retest set temperature does not exceed 100 degrees Celsius.

[0070] In some embodiments, the main control device pre-stores the wavelength response function of the photoelectric detection device The steps of receiving and processing the information of each thermal radiation by the system composed of the filter device, the light intensity detection device and the main control device include: receiving each thermal radiation by the filter device and emitting a single light beam corresponding to a specific wavelength band; measuring the intensity of each single light beam by the light intensity detection device to obtain the corresponding spectral response function The main control device according to the wavelength response function and each of the spectral response functions Get the reference central wavelength .

[0071] The wavelength response function Q(λ) is used to characterize the response sensitivity of the photodetector device to the intensity of light of different wavelengths, such as Figure 5 Q(λ).

[0072] In some embodiments, the main control device pre-stores the response wavelength range of the photoelectric detection device. ~ The main control device is based on the wavelength response function and each of the spectral response functions Get the reference central wavelength The steps include: the main control device according to the wavelength response function and each of the spectral response functions Get the reference wavelength at each set temperature , and then according to the reference wavelength The reference central wavelength is obtained by averaging .

[0073] In some embodiments, the reference wavelength at each set temperature satisfy:

[0074] ; where dλ is a small increment of wavelength λ.

[0075] In some examples, the index variable i is a non-negative integer. When i takes i1, i2, ..., im, the test setting temperature is 、 、…、 , reference wavelength satisfy:

[0076]

[0077] In some examples, the light intensity measurement system includes a filter device, a light intensity detection device, and a main control device. The photoelectric measurement system includes the filter device, the photoelectric detection device, and the main control device. The main control device pre-stores the initial voltage response function The filtering device obtains each of the thermal radiations, each of the test thermal radiations, and each of the retest thermal radiations and emits a single light beam corresponding to a specific wavelength band;

[0078] The light intensity detection device receives and measures the light intensity of each single light beam of a specific wavelength band corresponding to each thermal radiation to obtain corresponding spectral response information;

[0079] The photoelectric detection device receives and converts the optical information of the single light beams of the specific wavelength band corresponding to each of the test thermal radiation and the retest thermal radiation into corresponding voltage information respectively;

[0080] The main control device receives and responds to the voltage information and the initial voltage response function respectively. Perform the corresponding fitting calculations.

[0081] In some examples, the main control device also pre-stores the wavelength response characteristic information of the photoelectric detection device, so as to calculate the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information. .

[0082] In some examples, the steps of obtaining corresponding test voltage information based on the information of each test thermal radiation received by the system composed of the filtering device and the photoelectric detection device include: receiving each test thermal radiation respectively by the filtering device and emitting a test single light beam corresponding to a specific band; receiving by the photoelectric detection device and performing photoelectric conversion based on each test single light beam to obtain corresponding test voltage information.

[0083] In some examples, the steps of obtaining corresponding retest voltage information based on each received retest thermal radiation information by a system composed of the filtering device and the photoelectric detection device include: receiving each retest thermal radiation respectively by the filtering device and emitting a retest single light beam corresponding to a specific band; receiving by the photoelectric detection device and performing photoelectric conversion based on each retest single light beam to obtain corresponding retest voltage information.

[0084] like Figure 3 As shown, the second embodiment provides a temperature measurement system, comprising: a filtering device for receiving thermal radiation emitted from the low-temperature semiconductor device and emitting a single light beam with a specific wavelength band;

[0085] a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, for receiving and converting the optical information of the single light beam in the specific wavelength band into corresponding voltage information;

[0086] The main control device is communicatively connected to the photoelectric detection device and pre-stores a new voltage response function E(T) obtained by a temperature calibration method.

[0087] A third embodiment provides a temperature measurement method, comprising: controlling the set temperature within the low-temperature semiconductor device to be no higher than 700 degrees Celsius; receiving thermal radiation emitted from the low-temperature semiconductor device and emitting a single light beam of a specific wavelength band through a filter device of the temperature measurement system; receiving and converting optical information of the single light beam of the specific wavelength band into voltage information through a photoelectric detection device of the temperature measurement system; and obtaining a corresponding measured temperature based on the voltage information and the new voltage response function E(T) through a main control device of the temperature measurement system.

[0088] In the specific embodiment 1, a MIKRON M390 blackbody furnace is used as the standard heat source, the filter device is a long-wave pass filter with a set central wavelength greater than 1200 nm, and the photodetector device is a Thorlabs PDF10A2 photodetector, whose Q (λ) is as follows: Figure 5 As shown in the figure, the main control device is PLC, which stores .

[0089] Specifically, a spectrometer model QE65000 equipped with the filter device of Example 1 was used to control the blackbody furnace to set the temperature to 500 degrees Celsius, 600 degrees Celsius, and 700 degrees Celsius to perform light intensity measurement and calculation processing, and obtain is 1462nm. For example, the S(λ) of the spectrometer at 600 degrees Celsius is Figure 4 shown.

[0090] With this calibration as well as Calculate the first measured temperature at each retest set temperature shown in Table 1. The absolute value of the difference between each first measured temperature and the corresponding set temperature is the first deviation value. See Table 1 for details. As can be seen from Table 1, most of the first deviation values ​​are above 1 degree Celsius. The lower the set temperature, the more significant the temperature deviation is, and it may even deviate by 2 degrees Celsius or more. C and C2 are 1.867×10 6 and 1.44×10 7 .

[0091] Precise temperature control is crucial for depositing semiconductor material layers on substrates using semiconductor processing equipment, such as MOCVD equipment. For example, when growing GaN layers on silicon substrates to form light-emitting diodes (LEDs), a temperature deviation of 1°C can cause the LED's center wavelength to deviate by more than 1nm from the desired wavelength in the process design. In severe cases, this can fundamentally alter the resulting LED's light output performance. For example, a red shift in the LED's center wavelength could prevent the desired blue LED from being produced.

[0092] In the specific embodiment 2, the same steps as in embodiment 1 are performed to obtain Then, step S2 is performed to test the temperature at 500 degrees Celsius, 600 degrees Celsius and 700 degrees Celsius respectively. and The F is calibrated to 1.6×10 19 , is -39.62, is 1.44043×10 7 , (For the specific relationship between the test setting temperature and the corresponding voltage information, see Figure 6 ). The blackbody furnace is controlled to set the temperature as the retest set temperature in Table 1. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device is calibrated according to E And the corresponding voltage information is calculated to obtain the first retest set temperature range (500 degrees Celsius to 600 degrees Celsius) The second retest is set to -0.50 in the temperature range (600 to 700 degrees Celsius) It is -0.44. Figure 7 and Figure 8 The voltage information corresponding to the sampling temperature points under each retest set temperature range and the theoretical voltage-temperature curve relationship obtained by fitting these sampling temperature points are shown respectively. is 1462nm, -39.62 and each retest setting temperature range Calculate the effective center wavelength in the first retest set temperature range The value (1462-39.62-0.50) is approximately 1462nm, the effective center wavelength in the second retest set temperature range The value (1462-39.62-0.44) is also approximately 1462nm, using F of 1.6×10 19 , C2 is 1.44043×10 7, and the above-mentioned effective center wavelength and the new E(T) formula are used to calculate the second measured temperature at each retest set temperature. See Table 1 for details. The absolute value of the difference between the second measured temperature and the corresponding set temperature is the second deviation value. As can be seen from Table 1, the second deviation value is significantly smaller than the first deviation value, remaining within 1 degree Celsius.

[0093] Table 1

[0094]

[0095] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A temperature calibration method for measuring temperature of low-temperature semiconductor equipment, characterized in that: include: S0: Provide a standard heat source, a light intensity measurement system and a photoelectric measurement system. The light intensity measurement system and the photoelectric measurement system contain the same filter device and both have pre-stored voltage response functions. , where T is the temperature, F is the luminous flux parameter, is the wavelength variation parameter; S1: Obtain the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system and perform light intensity measurement and calculation processing to obtain the reference central wavelength of the filter device value; S2: Control the standard heat source to heat up in steps to different test set temperatures not exceeding 700 degrees Celsius, and obtain the test voltage information of the test thermal radiation emitted at each test set temperature and the reference center wavelength through the photoelectric measurement system. and the voltage response function Perform fitting calculation to obtain F value, and , for value, is the constant solved in step S2; S3: According to the reference central wavelength Value and Corrected central wavelength obtained by summing the values According to the F value, the reference center wavelength and stated The new voltage response function E(T) is obtained as .

2. The temperature calibration method according to claim 1, characterized in that: After step S3 is completed, execute the following Value correction steps: Control the standard heat source to heat up in steps to different retest set temperatures not exceeding 700 degrees Celsius, and obtain the retest voltage information and voltage response function of the retest thermal radiation emitted at each retest set temperature through the photoelectric measurement system Perform fitting calculation to obtain the results under different retest set temperature ranges. value, and the new voltage response function E(T); Where T is the temperature, is a fine correction amount of the central wavelength, the temperature difference between adjacent retest set temperatures is smaller than the temperature difference between adjacent test set temperatures, and each retest set temperature range includes at least three retest set temperatures.

3. The temperature calibration method according to claim 2, characterized in that: described In the value correction step: voltage response function for ; The new voltage response function E(T) is , where F, and The value of is obtained through step S2.

4. The temperature calibration method according to claim 1, characterized in that: The photoelectric measurement system includes a photoelectric detection device, and the light intensity measurement system also pre-stores wavelength response characteristic information of the photoelectric detection device. In step S1, the steps of obtaining the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius by the light intensity measurement system and performing light intensity measurement and calculation processing include: The spectral response information corresponding to the thermal radiation emitted by the standard heat source at each set temperature is obtained by the light intensity measurement system, and the reference center wavelength of the filter device is calculated based on the wavelength response characteristic information and each spectral response information. .

5. The temperature calibration method according to claim 4, characterized in that: The wavelength response characteristic information of the photoelectric detection device includes the wavelength response function of the photoelectric detection device The spectral response information corresponding to the thermal radiation emitted at each set temperature includes the spectral response function corresponding to each thermal radiation , obtaining the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information The steps include: According to the wavelength response function and each of the spectral response functions Get the reference wavelength at each set temperature , and then according to the reference wavelength The reference central wavelength is obtained by averaging .

6. The temperature calibration method according to claim 5, characterized in that: The light intensity measurement system also pre-stores the response wavelength range of the photoelectric detection device ~ , the reference wavelength at each set temperature satisfy: ; where dλ is a small increment of wavelength λ.

7. The temperature calibration method according to claim 2, characterized in that: In the step S0, the light intensity measurement system includes a filter device, a light intensity detection device and a main control device, and the photoelectric measurement system includes the filter device, the photoelectric detection device and the main control device, and the main control device pre-stores an initial voltage response function ; The filtering device respectively acquires each of the thermal radiations, each of the test thermal radiations, and each of the retest thermal radiations and emits a single light beam corresponding to a specific wavelength band; The light intensity detection device receives and measures the light intensity of each single light beam of a specific wavelength band corresponding to each thermal radiation to obtain corresponding spectral response information; The photoelectric detection device receives and converts the optical information of the single light beams of the specific wavelength band corresponding to each of the test thermal radiation and each of the retest thermal radiation into corresponding voltage information respectively; The main control device receives and responds to the voltage information and the initial voltage response function respectively. Perform the corresponding fitting calculations.

8. The temperature calibration method according to claim 7, characterized in that: The main control device also pre-stores the wavelength response characteristic information of the photoelectric detection device, so as to calculate the reference center wavelength of the filter device according to the wavelength response characteristic information and each spectral response information. .

9. The temperature calibration method according to claim 1, characterized in that: The voltage response function (T, F, δ) satisfies: 。 10. The temperature calibration method according to claim 2, characterized in that: The temperature difference between adjacent retest set temperatures does not exceed 50 degrees Celsius, and the range of each retest set temperature does not exceed 100 degrees Celsius.

11. The temperature calibration method according to claim 2, characterized in that: The temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and the temperature range between each adjacent test set temperature includes at least one retest set temperature.

12. The temperature calibration method according to claim 1, characterized in that: The filtering device includes a long-wave pass filter, and the photoelectric measurement system further includes a photoelectric detection device, so that the combination of the photoelectric detection device and the long-wave pass filter also plays the role of a band-pass filter.

13. The temperature calibration method according to claim 12, characterized in that: The operating wavelength range of the photoelectric detection device is 200-1000 nanometers. The combination of the photoelectric detection device and the long-wave pass filter also plays the role of a bandpass filter with a bandwidth of not less than 50 nanometers.

14. A temperature measurement system, characterized in that: include: A filter device, configured to receive thermal radiation emitted from the low-temperature semiconductor device and emit a single light beam of a specific wavelength band; a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, for receiving and converting the optical information of the single light beam in the specific wavelength band into corresponding voltage information; The main control device is communicatively connected to the photoelectric detection device and pre-stores a new voltage response function E(T) obtained by the temperature calibration method according to any one of claims 1 to 13.

15. A temperature measurement method, characterized in that: include: Providing a low-temperature semiconductor device and the temperature measurement system according to claim 14; Controlling the set temperature in the low-temperature semiconductor device to be no higher than 700 degrees Celsius; The filter device of the temperature measurement system receives the thermal radiation emitted from the low-temperature semiconductor device and emits a single light beam with a specific wavelength band; The photoelectric detection device of the temperature measurement system receives and converts the optical information of the single light beam in the specific wavelength band into voltage information; The main control device of the temperature measurement system obtains the corresponding measured temperature according to the voltage information and the new voltage response function E(T).

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