Probe card for testing semiconductor device

By designing a probe card support structure with shortened beam length, the problem of unstable contact between the probe card and the pads in the semiconductor device is solved, and more accurate electrical characteristic detection and the ability of multi-chip simultaneous contact is achieved.

CN120044284APending Publication Date: 2025-05-27LX SEMICON CO LTD
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Patent Information

Application Number
CN202411682655.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-27
Filing Date
2024-11-22
Publication Date
2025-05-27

AI Technical Summary

Technical Problem

When the existing probe card comes into contact with the inner pad of the semiconductor device, the probe part is easily pushed, resulting in unstable contact and affecting the accuracy of electrical characteristics detection.

Method used

A probe card is designed, which includes a support body, a circuit board, a first probe portion and a second probe portion. By adjusting the shape and position of the first and second support portions, the beam length of the probe portion is shortened to stabilize contact with the inner pad.

Benefits of technology

The probe part is stable in contact with the inner pad of the semiconductor device, avoiding the phenomenon that the probe end is pushed, improving the accuracy of electrical characteristics detection, and being able to contact multiple semiconductor devices simultaneously and stably.

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Abstract

The invention relates to a probe card for testing a semiconductor device. The present invention relates to a probe card mounted in a tester device for measuring electrical characteristics of a semiconductor chip formed on a semiconductor substrate. The probe card for testing electrical characteristics of a semiconductor device includes: a plate-shaped support body; the circuit board is located on the outer side of the supporting body; a first probe portion electrically connected to the circuit board and in contact with a first position of the semiconductor device; a second probe portion electrically connected to the circuit board and in contact with a second position of the semiconductor device; a first support portion supporting the first probe portion and having a first space portion on a center side; and a second support portion on the first support portion, supporting the second probe portion, and having a second space portion on a center side.
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Description

Technical Field

[0001] The present invention relates to a probe card installed in a tester device for measuring electrical characteristics of semiconductor chips formed on a semiconductor substrate. Background Art

[0002] The electrical die sorting (EDS) process is an electrical characteristic inspection performed between a manufacturing (FAB) process and a packaging process in a final product form. By inspecting the electrical characteristics of semiconductor devices (e.g., integrated circuit chips), it can be confirmed whether each semiconductor device (chip) has reached a desired quality level.

[0003] Specifically, the electrical characteristic inspection checks whether each semiconductor device implemented on a wafer has reached a desired quality level. Specifically, through the electrical characteristic inspection, it is determined whether each semiconductor device implemented on the wafer is qualified or unqualified according to whether each semiconductor device meets a desired electrical characteristic specification level. A specific mark (ink coating) is made on the unqualified chips. Since the chips determined to be defective in this way are excluded from subsequent processes, manufacturing efficiency can be increased.

[0004] Therefore, the EDS process is a process required to increase the yield of semiconductors as a final test (packaging process performed on qualified chips). The yield of semiconductors is calculated as the percentage of the number of high-quality chips produced to the maximum number of chips designed on a wafer, and is directly related to the productivity of semiconductors.

[0005] The EDS process can be performed by bringing a probe card connected to a test device into contact with a wafer on which semiconductor devices have been manufactured. Numerous fine pins (probe portions) provided on the probe card come into contact with pads of each semiconductor device manufactured on the wafer to transmit power, and defective chips can be identified through signals.

[0006] Figure 1 is a schematic cross-sectional view showing a main part of a typical probe card. Figure 2 is a schematic cross-sectional view showing a state in which a probe portion of a typical probe card is in contact with a semiconductor device.

[0007] A typical probe card 1 may include a first probe portion 13 and a second probe portion 14 connected to a printed circuit board (not shown). The first probe portion 13 and the second probe portion 14 are supported by a single support portion 11. In this case, the first probe portion 13 and the second probe portion 14 may be supported on the support portion 11 by an adhesive portion 12 such as epoxy resin.

[0008] A probe card 1 including a first probe portion 13 and a second probe portion 14 can be brought into contact with a semiconductor device 2 such as an integrated circuit chip to perform EDS. A semiconductor device 2 can be provided with external pads 22 and internal pads 23. From the perspective of the semiconductor device 2, the internal pads 23 can be pads located on the central side of the chip.

[0009] To perform EDS of the semiconductor device 2, the first probe portion 13 can be brought into contact with the external pads 22, and the second probe portion 14 can be brought into contact with the internal pads 23.

[0010] Referring to Figure 2 , the second probe portion 14 can be brought into contact with the internal pad 23 at a relatively long distance from the bonding portion 12. In this case, the second probe portion 14 can have a large deviation (a) in the vertical movement on the curved end side. Therefore, when in contact with the internal pad 23, a phenomenon (b) may occur in which the end of the second probe portion 14 is pushed inward.

[0011] Therefore, when the beam length corresponding to the length from the end of the support portion 11 to the curved portion of the second probe portion 14 becomes longer, the end (pin) of the second probe portion 14 can be pushed, and the end (pin) of the second probe portion 14 can move vertically at the curved portion, resulting in a deviation.

[0012] Therefore, solutions to these problems are needed. Summary of the Invention

[0013] One embodiment of the present invention aims to provide a probe card for testing a semiconductor device, which enables the probe portion to stably contact the internal pad of the semiconductor device without being pushed from the pad of the semiconductor device when the probe portion of the probe card contacts the internal pad of the semiconductor device.

[0014] In addition, the present invention aims to provide a probe card for testing a semiconductor device, which can reduce the beam length corresponding to the length from the end of the support portion of the probe card to the curved portion of the probe portion.

[0015] In addition, the present invention aims to provide a probe card for testing a semiconductor device, which can stably and simultaneously contact a plurality of semiconductor devices to test the semiconductor devices.

[0016] As a first aspect of the present invention for achieving the above object, a probe card for testing electrical characteristics of a semiconductor device includes: a support body; a circuit board located outside the support body; a first probe portion electrically connected to the circuit board and contacting a first position of the semiconductor device; a second probe portion electrically connected to the circuit board and contacting a second position of the semiconductor device; a first support portion supporting the first probe portion and having a first space portion exposing the first probe portion on the central side; and a second support portion located on the first support portion, supporting the second probe portion, and having a second space portion coaxially exposing the second probe portion on the central side.

[0017] In an exemplary embodiment, the first support portion and the second support portion may have the same inclined surface with respect to the plate shape of the support body.

[0018] In an exemplary embodiment, with respect to the first space portion, the second support portion may be positioned to extend further toward the central side than the first support portion.

[0019] In an exemplary embodiment, the first support portion may be positioned to overlap the second support portion.

[0020] In an exemplary embodiment, the first support portion and the second support portion may be provided in an annular shape made of ceramic.

[0021] In an exemplary embodiment, with respect to the first space portion or the second space portion, the second probe portion may be positioned inwardly from the first probe portion.

[0022] In an exemplary embodiment, the first probe portion may be positioned to extend inwardly by a first length from an end portion of the first support portion.

[0023] In an exemplary embodiment, the second probe portion may be positioned to extend inwardly by a second length from an end portion of the second support portion.

[0024] In an exemplary embodiment, the first space portion may be positioned coaxially with the second space portion.

[0025] In an exemplary embodiment, the size of the first space portion may be larger than the size of the second space portion.

[0026] In an exemplary embodiment, the first space portion and the second space portion may be arranged such that at least two or more are arranged in parallel.

[0027] As a second aspect of the present invention for achieving the above object, a probe card for testing electrical characteristics of a semiconductor device includes: a support body; a circuit board located outside the support body; a first support portion supported by the support body and having a first space portion on the central side; a second support portion located on the first support portion and having a second space portion on the central side; a first probe portion electrically connected to the circuit board and supported by the first support portion; and a second probe portion electrically connected to the circuit board and supported by the second support portion.

[0028] In an exemplary embodiment, the first probe portion may contact a first position of the semiconductor device, and the second probe portion may contact a second position of the semiconductor device.

[0029] In an exemplary embodiment, the second position may be located inward from the first position with respect to the first space portion or the second space portion.

[0030] As a third aspect of the present invention for achieving the above object, a probe card for testing electrical characteristics of a semiconductor device includes: a first probe portion contacting a first position of the semiconductor device; a second probe portion contacting a second position located inside the first position of the semiconductor device; a first support portion supporting the first probe portion and having a first space portion on the central side; and a second support portion located on the first support portion to support the second probe portion and having a second space portion coaxially located with the first space portion on the central side, wherein the first probe portion may be positioned to extend inward a first length with respect to the first space portion, and the second probe portion may be positioned to extend inward a second length with respect to the second space portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] By referring to the accompanying drawings and describing in detail exemplary embodiments of the present invention, the above and other objects, features, and advantages of the present invention will become more apparent to those of ordinary skill in the art. In the drawings:

[0032] Figure 1 is a schematic cross-sectional view showing a main part of a typical probe card;

[0033] Figure 2 is a schematic cross-sectional view showing a state where a probe portion of a typical probe card contacts a semiconductor device;

[0034] Figure 3 is a schematic plan view of a probe card according to an embodiment of the present invention;

[0035] Figure 4 is a schematic cross-sectional view of a probe card according to an embodiment of the present invention;

[0036] Figure 5 is a schematic cross-sectional view showing a state in which a probe card is in contact with a semiconductor device according to an embodiment of the present invention;

[0037] Figure 6 is an exploded perspective view of a probe card according to an embodiment of the present invention when viewed from a first direction;

[0038] Figure 7 is an exploded perspective view of a probe card according to an embodiment of the present invention when viewed from a second direction;

[0039] Figure 8 is a perspective view of a probe card according to an embodiment of the present invention when viewed from a second direction;

[0040] Figure 9 is an exploded perspective view of a probe card according to another embodiment of the present invention when viewed from a first direction;

[0041] Figure 10 is an exploded perspective view of a probe card according to another embodiment of the present invention when viewed from a second direction;

[0042] Figure 11 is a perspective view of a probe card according to another embodiment of the present invention when viewed from a second direction;

[0043] Figures 12 to 14 is a plan view showing a state in which a first probe portion and a second probe portion are coupled in a probe card according to another embodiment of the present invention;

[0044] Figure 15 is a perspective view showing a state in which a first probe portion and a second probe portion are coupled in a probe card according to another embodiment of the present invention; and

[0045] Figure 16 and Figure 17 is a conceptual diagram showing detection methods according to an embodiment and another embodiment of the present invention. Detailed Embodiments

[0046] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings, and regardless of the figure numbers, the same or similar components are denoted by the same reference numerals, and their repeated description will be omitted. The suffixes "module" and "unit" of the components used in the following description are given for ease of preparing the specification or are used interchangeably, and they do not have different meanings or functions themselves.

[0047] In addition, when it is determined that a detailed description of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted.

[0048] In addition, it should be noted that the accompanying drawings are only intended to facilitate the easy understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification should not be construed as being limited by the accompanying drawings.

[0049] Furthermore, although the respective accompanying drawings are described for convenience of illustration, those skilled in the art can implement other embodiments by combining at least two or more of the accompanying drawings, which is within the scope of the present invention.

[0050] In addition, when referring to an element such as a layer, a region, or a substrate being "on" another element, it will be understood that it can be directly on the other element, or an intermediate element can exist between them.

[0051] Figure 3 is a schematic plan view showing a probe card according to an embodiment of the present invention. Figure 4 is a schematic cross-sectional view showing a probe card according to an embodiment of the present invention.

[0052] Referring to Figure 3 and Figure 4 , a probe card 10 according to an embodiment of the present invention can test the electrical characteristics of a semiconductor device 20. For example, an electrical die sort (EDS) process can be performed using the probe card 10.

[0053] Here, for example, the semiconductor device 20 is an integrated circuit chip (IC chip), Figure 4 schematically shows a unit semiconductor device 20 implemented on a wafer. The semiconductor device 20 can include a first pad 22 located at a first position and a second pad 23 located at a second position. In one example, the unit semiconductor device 20 can have a first pad 22 located on the outside and a second pad 23 located inside the first pad 22.

[0054] The probe card 10 can include a plate-shaped support 300, a circuit board 200 located outside the support 300, and an inner core structure 100. The inner core structure 100 includes support portions 110 and 120 that support probe portions 130 and 140 electrically connected to the circuit board 200.

[0055] Although not shown separately, for example, the circuit board 200 is a printed circuit board (PCB) and can be electrically connected to a test device that can test the semiconductor device 20. Details regarding this are omitted.

[0056] In the probe card 10, the support 300 can be formed in a plate shape. The circuit board 200 can be located outside the support 300. For example, the circuit board 200 can be located outside the support 300 to surround the outside of the support 300. As an exemplary embodiment, the circuit board 200 can be set in a circular shape (ring shape). In Figure 4In [description], the size of the circuit board 200 is schematically shown as being reduced compared to Figure 2 reduced.

[0057] The probe card 10 may include a first probe portion 130 electrically connected to the circuit board 200 and contacting a first position of the semiconductor device 20, and a second probe portion 140 electrically connected to the circuit board 200 and contacting a second position of the semiconductor device 20. For example, the first probe portion 130 may contact an external pad (first pad) 22 of the semiconductor device 20, and the second probe portion 140 may contact an internal pad (second pad) 23 of the semiconductor device 20.

[0058] In addition, the probe card 10 may include: a first support portion 120 that supports the first probe portion 130 and has a first space portion 121a on the central side; and a second support portion 110 that is located on the first support portion 120, supports the second probe portion 140, and has a second space portion 111a on the central side.

[0059] The structure including the first probe portion 130, the second probe portion 140, and the first support portion 120 and the second support portion 110 that respectively support the first probe portion 130 and the second probe portion 140 may be referred to as an inner core structure 100. Here, for convenience, the reference numerals of the first support portion 120 and the second support portion 110 are set according to the connection distance from the support body 300.

[0060] Referring to Figure 4 , for example, the first support portion 120 and the second support portion 110 may have the same inclined surface with respect to the plate-shaped support body 300. In addition, as another example, the first support portion 120 and the second support portion 110 may have different inclined surfaces with respect to the plate-shaped support body 300.

[0061] In an exemplary embodiment, the second support portion 110 may be positioned to extend further inward than the first support portion 120 with respect to the first space portion 121a. For example, since the second support portion 110 supports the second probe portion 140 that contacts the second pad 23 located inside the semiconductor device 20, the second support portion 110 may be positioned to extend further inward than the first support portion 120 with respect to the central side of the probe card 10. Therefore, no unnecessary external force is applied to the second probe portion 140 that contacts the second pad 23 located inside the semiconductor device 20, and the second probe portion 140 can be stably supported by the second support portion 110. This will be described in more detail below.

[0062] Referring to Figure 4, the first support part 120 can be positioned to overlap with the second support part 110. One side surface of the second support part 110 can be supported by the support body 300, and the other side surface of the second support part 110 can support the second probe part 140. At the same time, the first support part 120 can be positioned close to or in contact with the other side surface of the second support part 110. At least a partial area of the second support part 110 can overlap with the first support part 120. For example, the second support part 110 can have a larger area, and the first support part 120 can be located on a partial area of the larger area.

[0063] Figure 5 is a schematic cross-sectional view showing a state in which a probe card contacts a semiconductor device according to an embodiment of the present invention.

[0064] Referring to Figure 5 , it shows that the probe card 10 contacts the semiconductor device 20 to use the probe card 10 to detect the state of the semiconductor device 20.

[0065] Specifically, it shows a state in which the end of the first probe part 130 contacts the outer pad (first pad) 22 of the semiconductor device 20 and the end of the second probe part 140 contacts the inner pad (second pad) 23 of the semiconductor device 20.

[0066] In this case, since the end side of the first probe part 130 is supported by the first support part 120, the first probe part 130 can stably contact the first pad 22. In addition, since the end side of the second probe part 140 is supported by the second support part 110, the second probe part 140 can stably contact the second pad 23.

[0067] The first probe part 130 can be positioned to extend inward by a first length L1 from the end 121 of the first support part 120. That is, the first probe part 130 can be positioned to be exposed on the first space part 121a by being exposed from the end 121 of the first support part 120. In addition, the second probe part 140 can be positioned to extend inward by a second length L2 from the end 111 of the second support part 110. That is, the second probe part 140 can be positioned to be exposed on the second space part 111a by being exposed from the end 111 of the second support part 110. Therefore, the part extending from the end 111 or 121 can be called the beam length.

[0068] According to an embodiment of the present invention, the beam lengths L1 and L2 can be configured to be shortened so that the first support part 120 and the second support part 110 can stably support the end portions of the first probe part 130 and the second probe part 140, respectively. Therefore, when the beam lengths are shortened, the second probe part 140 can stably contact the inner pad (second pad) 23 of the semiconductor device 20 without the end portion of the second probe part 140 being pushed.

[0069] In particular, according to an embodiment of the present invention, the second support part 110 is separately formed with an inclined surface to stably support the end portion of the second probe part 140. When the second support part 110 is absent, the second probe part 140 is supported by the first support part 120 to contact the inner pad 23, but according to the embodiment of the present invention, since the second probe part 140 is supported by the second support part 110, the beam length can be shortened, thereby stably supporting the second probe part 140.

[0070] Although not shown separately, the first probe part 130 can be firmly supported by being attached to the first support part 120 using an adhesive such as epoxy resin. In addition, the second probe part 140 can be firmly supported by being attached to the second support part 110 using an adhesive such as epoxy resin.

[0071] In an exemplary embodiment, the first support part 120 and the second support part 110 can be provided in an annular shape made of ceramic. For example, the first support part 120 can be made of an annular ceramic having a first space part 121a on the central side. In addition, the second support part 110 can be made of an annular ceramic having a second space part 111a on the central side.

[0072] The first space part 121a can be coaxially positioned with the second space part 111a. For example, the first space part 121a and the second space part 111a can be provided to be coaxially coupled to each other.

[0073] In this case, referring to Figure 4 and Figure 5 , the size of the first space part 121a can be larger than the size of the second space part 111a. This may be because the second probe part 140 that contacts the second pad 23 located inside is positioned more inward than the second space part 111a.

[0074] Figure 6 is an exploded perspective view of a probe card according to an embodiment of the present invention when viewed from a first direction. Figure 7 is an exploded perspective view of a probe card according to an embodiment of the present invention when viewed from a second direction. Figure 8 is a perspective view of a probe card according to an embodiment of the present invention when viewed from a second direction.

[0075] Referring to Figure 6 , as an exemplary embodiment, a specific shape of the first support portion 120 and the second support portion 110 is shown. Here, the first support portion 120 may be coupled to the second support portion 110. The second support portion 110 and the first support portion 120 may be coupled by a pin 150.

[0076] In the second support portion 110, inclined surfaces 112 protruding from the base surface 114 are respectively formed at the center sides 115 on each side of the end portion 111, and intersect at the center side to form a second space portion 111a. A pin hole 113 to which the pin 150 is coupled may be located on the base surface 114. The second probe portion 140 may be supported on the inclined surface 112. As described above, the second probe portion 140 may be supported on the inclined surface 112 using an adhesive such as epoxy resin.

[0077] In the first support portion 120 coupled to the second support portion 110, a coupling hole 122 to which the second probe portion 140 is coupled may be located at a position corresponding to the inclined surface 112 of the second support portion 110. A support surface 123 may be formed to extend inwardly in the first space portion 121a of the first support portion 120.

[0078] Therefore, since the coupling hole 122 to which the second probe portion 140 is coupled is coupled to the center side 115 of each edge of the end portion, the first support portion 120 and the second support portion 110 may be firmly coupled.

[0079] Referring to Figure 7 , it can be seen that the outer surface of the first support portion 120 itself forms an inclined surface to support the first probe portion 130. The end side of the first probe portion 130 may be provided to protrude inwardly from the first space portion 121a. That is, the end side of the first probe portion 130 may be provided to protrude inwardly from the end portion 121 of the first support portion 120.

[0080] In addition, as described above, a state in which the second probe portion 140 is supported by the inclined surface 112 of the second support portion 110 is shown. The second probe portion 140 may be connected to the circuit board 200 by passing through the coupling hole 122 and extending in a direction opposite to the protruding direction.

[0081] When the first support portion 120 and the second support portion 110 are coupled, and the first probe portion 130 and the second probe portion 140 are respectively coupled to the first support portion 120 and the second support portion 110, the state shown in Figure 8 may be formed.

[0082] In the above state, the first probe part 130 and the second probe part 140 can stably contact the first pad 22 and the second pad 23 of the semiconductor device 20 without the ends being pushed, to test the electrical characteristics of the semiconductor device 20.

[0083] Figure 9 is an exploded perspective view of a probe card according to another embodiment of the present invention when viewed from a first direction. Figure 10 is an exploded perspective view of a probe card according to another embodiment of the present invention when viewed from a second direction. Figure 11 is a perspective view of a probe card according to another embodiment of the present invention when viewed from a second direction.

[0084] Figures 9 to 11 Shows the core structure 101 of a probe card according to another embodiment of the present invention. The core structure 101 according to this embodiment may be provided with a plurality of first space portions 124a and second space portions 118a to which the first probe part 130 and the second probe part 140 can be coupled. Accordingly, a plurality of semiconductor devices 20 can be simultaneously detected according to a group of the plurality of first probe parts 130 and second probe parts 140 coupled to the plurality of first space portions 124a and second space portions 118a.

[0085] For example, referring to Figures 9 to 11 , three sets of the above first probe parts 130 and second probe parts 140 are provided to simultaneously contact three semiconductor devices 20 and simultaneously detect the three semiconductor devices 20. Here, the state of setting three sets of the first probe parts 130 and second probe parts 140 is exemplarily shown, but needless to say, different numbers of the first probe parts 130 and second probe parts 140 can be set as a group.

[0086] Referring to Figure 9 , three sets of inclined surfaces 116 are formed on the second support part 110a. In addition, the ends 118 of the respective inclined surfaces 116 are formed in a V shape so that when the ends 118 of the two inclined surfaces 116 intersect each other, a second space portion 118a having a square shape can be formed.

[0087] Furthermore, referring to Figure 10 , it can be seen that three first space portions 124a are formed in parallel in the first support part 120a. A coupling hole 125 (see Figure 10 ) to which the inclined surface 116 of the second support part 110a is coupled may be provided on one side of the first space portion 124a.

[0088] Referring to Figure 11 , the second support part 110a and the first support part 120a are coupled to form a core structure 101 capable of simultaneously detecting three semiconductor devices 20.

[0089] In the second support part 110a, inclined surfaces 116 are formed which respectively protrude from the center sides 119 on both sides of the end part 118, and the inclined surfaces 116 intersect on the center side to form a second space part 118a. The second probe part 140 can be supported on the inclined surfaces 116. As described above, the second probe part 140 can be supported on the inclined surfaces 116 using an adhesive such as epoxy resin.

[0090] In the first support part 120a coupled to the second support part 110a, the coupling holes 125 to which the second probe part 140 is coupled can be located at positions corresponding to the inclined surfaces 116 of the second support part 110a.

[0091] Accordingly, since the coupling holes 125 to which the second probe part 140 is coupled are coupled to the center sides 119 of the respective edges of the end part, the first support part 120 and the second support part 110 can be firmly coupled by a stepped coupling. In this case, similar to the case of the first embodiment, the first support part 120a and the second support part 110a can be coupled by pins (not shown) and pin holes 126. That is, the first support part 120a and the second support part 110a can be coupled to each other by separate pins. Refer to Figure 9 , which shows the pin holes 126 formed in the second support part 110a. Although not shown separately, pin holes to which pins are coupled can also be formed in the second support part 110a.

[0092] Figures 12 to 14 is a plan view showing the state in which the first probe part and the second probe part are coupled in a probe card according to another embodiment of the present invention.

[0093] Figure 12 Exemplarily shows the state in which the second probe part 140 is coupled to the second support part 110a. Figure 13 Exemplarily shows the state in which the first probe part 130 is coupled to the first support part 120a.

[0094] Figure 14 Exemplarily shows the core structure 101 formed by the coupling of the first support part 120a and the second support part 110a and the coupling of the first probe part 130 and the second probe part 140.

[0095] Figure 15 is a perspective view showing the state in which the first probe part and the second probe part are coupled in a probe card according to another embodiment of the present invention.

[0096] Refer to Figure 15, more specifically showing the core structure 101 formed by the connection of the first support part 120a and the second support part 110a and the connection of the first probe part 130 and the second probe part 140.

[0097] The first probe part 130 can be supported by the outer surface of the first support part 120a. A first space part 124a is formed in the first support part 120a, and the first probe part 130 extends inwardly into the first space part 124a so that the probe can be positioned.

[0098] The second probe part 140 can be supported by the inclined surface 116 of the second support part 110a. The end 118 of the inclined surface 116 forms a second space part 118a, and the probe of the second probe part 140 can be located inside the second space part 118a. In addition, the internal space of the end 124 of the first support part 120a forms the first space part 124a so that the probe of the first probe part 130 can be positioned.

[0099] Figure 16 and Figure 17 are conceptual diagrams showing detection methods according to one embodiment and another embodiment of the present invention.

[0100] Referring to Figure 16 , as in one embodiment of the present invention described above, the probe card 10 includes one detection area 102 (site 1), and a single semiconductor device can be detected using this one detection area 102.

[0101] In addition, referring to Figure 17 , as in another embodiment of the present invention described above, the probe card 10 includes three detection areas 102, 103, and 104 (site 1, site 2, and site 3), and three single semiconductor devices can be detected using these three detection areas 102, 103, and 104.

[0102] As described above, according to an embodiment of the present invention, by forming an annular ceramic support part having two axes, the beam length of the probe part located inside thereof can be minimized.

[0103] Therefore, due to the shortening of the beam length, when the probe part contacts the inner (center side) pad of the semiconductor device, the probe part can stably contact the inner pad without the end of the probe part being pushed.

[0104] Therefore, an integrated circuit (IC) having pads (island pads) on the center side (inner part) of the semiconductor device can be tested. In addition, the advantage is that restrictions related to the pad layout during chip design can be reduced.

[0105] According to an exemplary embodiment of the present invention, the following effects are achieved.

[0106] First, according to an embodiment of the present invention, when the probe portion of the probe card contacts the inner pad of the semiconductor device, the probe portion can stably contact the inner pad without being pushed from the pad of the semiconductor device.

[0107] In addition, the beam length corresponding to the length from the end of the support portion of the probe card to the bent portion of the probe portion can be reduced.

[0108] In addition, multiple semiconductor devices can be stably and simultaneously contacted and tested.

[0109] Therefore, an integrated circuit (IC) having pads (island pads) on the center side (inner portion) of the semiconductor device can be tested. Additionally, the advantage is that restrictions related to pad layout during chip design can be reduced.

[0110] Furthermore, according to another embodiment of the present invention, there are additional technical effects not mentioned herein. Those skilled in the art can understand the additional technical effects through the specification and the drawings.

[0111] The above description is only an exemplary description of the technical spirit of the present invention. Without departing from the basic characteristics of the present invention, those skilled in the art to which the present invention pertains will be able to modify and change this disclosure in various ways.

[0112] Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but rather to describe it, and the scope of the technical spirit of the present invention is not limited by these embodiments.

[0113] The scope of the present invention should be interpreted according to the appended claims, and all technical concepts within the equivalent scope should be interpreted as being included within the scope of the present invention.

Claims

1. A probe card for testing electrical characteristics of a semiconductor device, the probe card comprising: Support body; A circuit board, the circuit board is located outside the support body; a first probe portion electrically connected to the circuit board and in contact with a first location of the semiconductor device; a second probe portion electrically connected to the circuit board and in contact with a second location of the semiconductor device; a first supporting portion that supports the first probe portion and has a first space portion exposing the first probe portion at a center side; as well as A second supporting portion is located on the first supporting portion, supports the second probe portion, and has a second space portion exposing the second probe portion coaxially with the center side.

2. The probe card according to claim 1, wherein: The second supporting portion is positioned to extend farther toward the center side than the first supporting portion relative to the first space portion.

3. The probe card according to claim 1, wherein: The first support portion is positioned to overlap the second support portion.

4. The probe card according to claim 1, wherein: The first supporting portion and the second supporting portion are provided in a ring shape made of ceramics.

5. The probe card according to claim 1, wherein: The second probe portion is located inwardly from the first probe portion relative to the first space portion or the second space portion.

6. The probe card according to claim 1, wherein: The first probe portion is positioned to extend inwardly from an end of the first support portion by a first length.

7. The probe card according to claim 1, wherein: The second probe portion is positioned to extend inwardly from an end of the second support portion by a second length.

8. The probe card according to claim 1, wherein: The size of the second space portion is smaller than the size of the first space portion.

9. The probe card according to claim 1, wherein: The first space portion and the second space portion are arranged such that at least two or more are arranged in parallel.

10. A probe card for testing electrical characteristics of a semiconductor device, the probe card comprising: Support body; A circuit board, the circuit board is located outside the support body; a first supporting portion, the first supporting portion being supported by the supporting body and having a first space portion on a center side; a second supporting portion, the second supporting portion being located on the first supporting portion and having a second space portion on a central side; a first probe portion electrically connected to the circuit board and supported by the first supporting portion; as well as A second probe portion is electrically connected to the circuit board and supported by the second supporting portion.