Modeling method for metal oxide semiconductor

Abstract

This invention provides a modeling method for metal-oxide-semiconductor semiconductors, comprising: establishing an initial sub-circuit simulation model, as follows: where Y_MF is the multi-interdigitation effect correction parameter, NF is the interdigitation index of the gate of the MOS device, and X... nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 To obtain the fitting parameters, multiple measured electrical characteristic parameters of metal-oxide-semiconductor semiconductors under different interdigitation indices, different channel widths, and different channel lengths are obtained. The fitting parameters are adjusted so that the errors of the multi-interdigitation effect correction parameters obtained from simulations under different interdigitation indices, different channel widths, and different channel lengths are all within the set values. The corresponding fitting parameter values ​​are then determined. The following multi-interdigitation effect model is established: Y = K + Y_MF.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a modeling method for metal-oxide-semiconductor semiconductors. Background Technology

[0002] SPICE (Simulation Program with Integrated Circuit Emphasis) is a language-based simulator software used for circuit description and simulation. It is used to check the integrity of circuit connections and functions, and to predict circuit behavior. SPICE is primarily used for simulating analog and mixed-signal circuits. For SPICE to function well, device-level model parameters must be provided. Commonly used SPICE models include the BSIM series, PSP, or empirical models. SPICE modeling engineers rely on device theory and experience to extract model parameters for use by the SPICE simulation program. Metal-oxide-semiconductor (MOSFET) field-effect transistors can be modeled and simulated using SPICE to obtain electrical simulation data, such as threshold voltage, source-drain saturation current, and source-drain linear current.

[0003] Existing metal-oxide-semiconductor (MOSFET) modeling methods primarily employ a SPICE modeling approach for LDMOS devices with different field mobility (NF). Specifically, this involves selecting three parameters from the existing BSIM model of LDMOS: threshold voltage (vth0), low field mobility (u0), and gate voltage dependence parameter (ub), and formulating them as follows: In this form, P0 is the BSIM model parameter value when the cross exponent NF = 1, P1 is NF, P2 is the exponent parameter of NF, NF is the cross exponent of the MOS device gate, and Numberoffinger is the intrinsic value of the MOS device. By formulating vth0, u0, and ub, effects that vary with NF can be incorporated into the device characteristics, calibrating the characteristics of LDMOS devices with different cross exponents NF that cannot be accurately fitted by a standalone BSIM model.

[0004] However, existing modeling methods have two drawbacks: 1. The BSIM model parameters are formulated as power functions, which are monotonic within the range of cross-index NF > 1, making it impossible to simulate the experimental data showing the increasing and decreasing trends of the NF effect in MOS devices. 2. Existing technologies are based on the NF effect of LDMOS, which is characterized by a fixed channel length L and a large channel width W. The channel width effect of LDMOS is small, and since the channel length L is fixed, there is no short-channel effect. Therefore, BSIM model parameters that have an overall impact on the electrical performance of devices of different sizes are selected for formulation. If this method is applied to modeling the NF effect of general low-voltage MOS devices, it will not be able to accurately simulate the characteristics of devices of different sizes. For example, experimental data shows that the multi-crossing finger (NF) effect trend of short-channel-length MOS devices is inconsistent with that of devices with a channel length and a channel width of 10 micrometers. Therefore, existing modeling techniques cannot accurately simulate the characteristics of MOS devices with different channel widths W and channel lengths L as they change with different cross-index NF. Summary of the Invention

[0005] The purpose of this invention is to provide a modeling method for metal-oxide-semiconductor (MOS) devices that can simulate measured data showing a trend of increasing or decreasing with the increase of the cross exponent NF. Furthermore, it can accurately simulate the characteristics of MOS devices with different channel widths W and channel lengths L as they change with different cross exponents NF.

[0006] To achieve the above objectives, the present invention provides a modeling method for metal-oxide-semiconductor semiconductors, comprising:

[0007] The initial sub-circuit simulation model is established as follows:

[0008]

[0009] Where Y_MF is the multi-interdigitation effect correction parameter, NF is the interdigitation index of the gate of the MOS device, and X is the multi-interdigitation index of the gate. nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 These are the fitting parameters;

[0010] We obtained multiple measured electrical characteristic parameters of metal-oxide-semiconductor semiconductors under different interdigitation, channel widths, and channel lengths.

[0011] The fitting parameters are adjusted so that the errors between the multi-finger effect correction parameters obtained from simulation and the measured electrical characteristic parameters under different interdigitation, channel width and channel length are all within the set value, and the corresponding fitting parameter value is determined at this time.

[0012] The following multifidus effect model is established:

[0013] Y = K + Y_MF, where K is a constant, Y is a correction parameter, and Y_MF is the correction parameter for the multifidus effect.

[0014] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the correction parameters include: long-channel threshold voltage without substrate bias, low-field mobility, first-order mobility degradation coefficient caused by longitudinal electric field, second-order mobility degradation coefficient caused by longitudinal electric field, channel length dependence coefficient of volume charge effect, gate voltage dependence coefficient of volume charge effect, and / or carrier saturation velocity.

[0015] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the fitting parameter X... nf0 The value range is -1e 12 ~1e 12 The fitting parameter A has a range of -1e. 12 ~1e 12 Fitting parameters X nf1 The value range is -1e 6 ~1e 6 The fitting parameter B has a range of -1e. 6 ~1e 6 Fitting parameters X nf2 The value range of is -1e6 to 1e6, and the value range of the fitting parameter C is -1e6. 6 ~1e 6 Fitting parameters X nf3 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter D takes values ​​in the range of -1e 6 ~1e 6 Fitting parameters X nf4 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter E ranges from -1e. 6 ~1e 6 Fitting parameters X nf5 The value range is -1e -12 ~-1e -16 or 1e-16 ~1e -12 The fitting parameter F takes values ​​in the range of -1e 6 ~1e 6 .

[0016] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the value of k includes 0.21.

[0017] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the set value includes 0.9% to 1.1%.

[0018] This invention also provides a modeling method for metal-oxide-semiconductor semiconductors, comprising:

[0019] The initial sub-circuit simulation model is established as follows:

[0020]

[0021] Where Y_MF is the multi-interdigitation effect correction parameter, NF is the interdigitation index of the gate of the MOS device, and X is the multi-interdigitation index of the gate. nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 These are the fitting parameters;

[0022] We obtained multiple measured electrical characteristic parameters of metal-oxide-semiconductor under different fork indices, different channel widths, and different channel lengths.

[0023] The fitting parameters are adjusted so that the errors between the multi-finger effect correction parameters obtained from simulation and the measured electrical characteristic parameters under different interdigitation, channel width and channel length are all within the set value, and the corresponding fitting parameter value is determined at this time.

[0024] The following multifidus effect model is established:

[0025] Y = K + Y_MF, where K is a constant, Y is a correction parameter, and Y_MF is the correction parameter for the multifidus effect.

[0026] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the correction parameters include: long-channel threshold voltage without substrate bias, low-field mobility, first-order mobility degradation coefficient caused by longitudinal electric field, second-order mobility degradation coefficient caused by longitudinal electric field, channel length dependence coefficient of volume charge effect, gate voltage dependence coefficient of volume charge effect, and / or carrier saturation velocity.

[0027] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the fitting parameter X... nf0 The value range is -1e 12 ~1e 12 The fitting parameter A has a range of -1e. 12 ~1e 12 Fitting parameters X nf1 The value range is -1e 6 ~1e 6 The fitting parameter B has a range of -1e. 6 ~1e 6 Fitting parameters X nf2 The value range of is -1e6 to 1e6, and the value range of the fitting parameter C is -1e6. 6 ~1e 6 Fitting parameters X nf3 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter D takes values ​​in the range of -1e 6 ~1e 6 Fitting parameters X nf4 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter E ranges from -1e. 6 ~1e 6 Fitting parameters X nf5 The value range is -1e -12 ~-1e -16 or 1e -16 ~1e -12 The fitting parameter F takes values ​​in the range of -1e 6 ~1e 6 .

[0028] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the value of k includes 0.21.

[0029] Optionally, in the aforementioned modeling method for metal-oxide-semiconductor, the set value includes 0.9% to 1.1%.

[0030] In the metal-oxide-semiconductor (MOS) modeling method provided by this invention, the model can simulate measured data showing a trend of both increase and decrease in the NF effect. Furthermore, it accurately simulates the characteristics of MOS devices with different channel widths W and channel lengths L as they change with different cross exponents. Attached Figure Description

[0031] Figure 1 This is a flowchart of the modeling method for metal-oxide-semiconductor according to Embodiment 1 of the present invention;

[0032] Figure 2 This is a flowchart of the modeling method for metal-oxide-semiconductor according to Embodiment 2 of the present invention;

[0033] Figures 3 to 5 This is a comparison diagram of the simulation models of metal-oxide-semiconductor systems of the present invention and existing technologies. Detailed Implementation

[0034] The specific embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0035] In the following text, the terms “first,” “second,” etc., are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological sequence. It should be understood that these terms, as used herein, may be replaced where appropriate. Similarly, if the methods described herein comprise a series of steps, and the order of these steps presented herein is not necessarily the only possible order in which they can be performed, and some described steps may be omitted and / or other steps not described herein may be added to the method.

[0036] Furthermore, it should be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and / or pattern, it can be located directly on another layer or substrate, and / or intercalation layers may also be present. Additionally, it should be understood that when a layer is referred to as being "under" another layer, it can be located directly under that layer, and / or one or more intercalation layers may also be present. Furthermore, references to "on" and "under" the layers may be made based on the accompanying drawings.

[0037] Example 1

[0038] Please refer to Figure 1 Embodiment 1 of the present invention provides a modeling method for metal-oxide-semiconductor semiconductors, comprising:

[0039] S11: Establish the initial sub-circuit simulation model as follows:

[0040]

[0041] Where Y_MF is the correction parameter for the multifidus (MF) effect, X nf0 NF A X nf1 NF B X nf2 NFB X nf3 NF C X nf4 NF D X nf5 and NF E All are fitting parameters, where W is the channel width, L is the channel length, and X is the channel length. nf6 It is a constant;

[0042] S12: Obtain multiple measured electrical characteristic parameters of metal-oxide-semiconductor under different interdigitation, different channel widths and different channel lengths;

[0043] S13: Adjust the fitting parameters so that the errors between the multi-finger effect correction parameters obtained by simulation under different interdigitation, different channel widths and different channel lengths and the measured electrical characteristic parameters are all within the set values, and then determine the value of the corresponding fitting parameters at this time.

[0044] S14: Establish the following multifidus (MF) effect model:

[0045] Y = K + Y_MF, where K is a constant, obtained when the cross-index is 1 (NF = 1) during model fitting; in this embodiment, K can be 0.21. Y is a correction parameter, and Y_MF is a multi-cross-index (MF) effect correction parameter. Y is a parameter in the selected BSIM model; adding MF to Y yields the effect correction parameter Y_MF. The BSIM model (Berkeley Short-channel IGFET Model) is a mathematical model used to describe the behavior of field-effect transistors (FETs) and is widely used in integrated circuit design and analysis. Y is the parameter to be corrected. By adding the multi-cross-index (MF) effect correction parameter to the parameter correction, the characteristics of MOS devices with different channel widths W and channel lengths L as they change with different cross-indexes NF can be simulated.

[0046] Preferably, the correction parameters include: long-channel threshold voltage vth0 without substrate bias, low-field mobility u0, first-order mobility degradation coefficient ua caused by longitudinal electric field, second-order mobility degradation coefficient ub caused by longitudinal electric field, channel length dependence coefficient a0 of volume charge effect, gate voltage dependence coefficient ags of volume charge effect, and / or carrier saturation velocity vsat. One or more of these parameters can be selected during correction. Long-channel threshold voltage vth0 without substrate bias also includes threshold voltages with smaller channel lengths and threshold voltages with smaller channel widths. Low-field mobility u0 includes mobility with smaller channel lengths. Carrier saturation velocity vsat includes saturation velocity of carriers with smaller channel lengths and saturation velocity of carriers with smaller channel lengths and widths. Taking long-channel threshold voltage vth0 without substrate bias as an example, the initial sub-circuit simulation model is as follows:

[0047]

[0048] Where dvth0_MF is the multi-interdigitation effect correction parameter for the long-channel threshold voltage vth0 without substrate bias, and NF is the interdigitation index of the gate of the MOS device. nf0 A, dvth nf1 B, dvth nf2 C, dvth nf3 D, dvth nf4 E, dvth nf5 Both F and W are fitting parameters, W is the channel width, L is the channel length, and dvth is the channel length. nf6 These are the fitting parameters.

[0049] In the formula, the W*L term (the first term on the right side of the equation) takes effect when both the channel width W and the channel length L are large. Therefore, when both the channel width W and the channel length L are large, the fitting parameter dvth of the W*L term should be adjusted. nf0 The terms W (the second term on the right-hand side of the equation) or L (the third term on the right-hand side of the equation) take effect when the channel width W or channel length L is large. Therefore, when the channel width W or channel length L is large, the fitting parameter dvth of the W term should be adjusted. nf1 The fitting parameter dvth of the B or L term nf2 And C. This feature works when both the channel width W and channel length L are small, so when both W and L are small, adjustment is needed. The fitting parameters dvth of the term nf5 And F. or It works when the channel width W or channel length L is very small, so when the channel width W or channel length L is very small, adjustment is needed. The fitting parameters dvth of the term nf3 and D or The fitting parameters dvth of the term nf4 and E. dvth nf6 The simulation parameters can be adjusted at any time. Therefore, by adjusting the simulation parameters, the values ​​of dvth0_MF and the measured values ​​can be kept within the set range. The values ​​of multiple fitting parameters at this point can be determined, and by substituting them into the formula for dvth0_MF, the model of dvth0_MF can be obtained. Similarly, when the simulation parameters are low-field mobility u0, the first-order mobility degradation coefficient ua caused by the longitudinal electric field, the second-order mobility degradation coefficient ub caused by the longitudinal electric field, the channel length dependence coefficient a0 of the volume charge effect, the gate voltage dependence coefficient ags of the volume charge effect, and / or the carrier saturation velocity vsat, these parameters can be directly substituted into the sub-model of this embodiment.

[0050] In this embodiment of the invention, the fitting parameter X nf0 The value range is -1e 12 ~1e 12 The fitting parameter A has a range of -1e. 12 ~1e 12 Fitting parameters X nf1 The value range is -1e 6 ~1e 6 The fitting parameter B has a range of -1e. 6 ~1e 6 Fitting parameters X nf2 The value range of is -1e6 to 1e6, and the value range of the fitting parameter C is -1e6. 6 ~1e 6 Fitting parameters X nf3 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter D takes values ​​in the range of -1e 6 ~1e 6 Fitting parameters X nf4 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter E ranges from -1e. 6 ~1e 6 Fitting parameters X nf5 The value range is -1e -12 ~-1e -16 or 1e -16 ~1e -12 The fitting parameter F takes values ​​in the range of -1e 6 ~1e6 .

[0051] The set value in Embodiment 1 of the present invention includes 0.9% to 1.1%, for example, it can be 1%. Therefore, when the fitting parameters are adjusted so that the error between the multi-finger effect correction parameter obtained by simulation under different interdigitation, different channel widths, and different channel lengths and the measured electrical characteristic parameters is within 1%, the corresponding fitting parameter value is a determined fitting parameter value. In other embodiments of the present invention, the set value can also be other values.

[0052] Example 2

[0053] Please refer to Figure 2 This invention provides a modeling method for metal-oxide-semiconductor semiconductors, comprising:

[0054] S21: Establish the initial sub-circuit simulation model as follows:

[0055]

[0056] Where Y_MF is the multi-finger (MF) effect correction parameter, NF is the gate cross-index of the MOS device, and X is the cross-index of the gate. nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 These are the fitting parameters;

[0057] S22: Obtain multiple measured electrical characteristic parameters of metal-oxide-semiconductor under different interdigitation, different channel widths and different channel lengths;

[0058] S23: Adjust the fitting parameters so that the errors between the multi-finger effect correction parameters obtained by simulation under different interdigitation, different channel widths and different channel lengths and the measured electrical characteristic parameters are all within the set values, and then determine the value of the corresponding fitting parameters at this time;

[0059] S24: Establish the following multifidus (MF) effect model:

[0060] Y = K + Y_MF, where K is a constant, which is the value obtained when fitting the model when the cross exponent is 1, i.e. NF = 1. In this embodiment of the invention, the value can be 0.21. Y is a correction parameter, and Y_MF is a correction parameter for the multiple cross exponent (MF) effect. Y is a parameter in the selected BSIM model. Selecting Y and adding MF to it yields the effect correction parameter Y_MF.

[0061] Preferably, the correction parameters include: long-channel threshold voltage vth0 without substrate bias, low-field mobility u0, first-order mobility degradation coefficient ua caused by longitudinal electric field, second-order mobility degradation coefficient ub caused by longitudinal electric field, channel length dependence coefficient a0 of volume charge effect, gate voltage dependence coefficient ags of volume charge effect, and / or carrier saturation velocity vsat. One or more of these parameters can be selected during correction. Long-channel threshold voltage vth0 without substrate bias also includes threshold voltages with smaller channel lengths and threshold voltages with smaller channel widths. Low-field mobility u0 includes mobility with smaller channel lengths. Carrier saturation velocity vsat includes saturation velocity of carriers with smaller channel lengths and saturation velocity of carriers with smaller channel lengths and widths. Example 2 is the same as Example 1 except for the model formula, and will not be repeated here. For example, taking the threshold voltage as an example, the initial sub-model formula is as follows:

[0062]

[0063] Where dvth0_MF is the multi-interdigitation effect correction parameter for the long-channel threshold voltage vth0 without substrate bias, and NF is the interdigitation index of the gate of the MOS device. nf0 A, dvth nf1 B, dvth nf2 C, dvth nf3 D, dvth nf4 E, dvth nf5 Both F and W are fitting parameters, W is the channel width, L is the channel length, and dvth is the channel length. nf6 These are the fitting parameters.

[0064] In this embodiment of the invention, the fitting parameter X nf0 The value range is -1e 12 ~1e 12 The fitting parameter A has a range of -1e. 12 ~1e 12 Fitting parameters X nf1 The value range is -1e 6 ~1e 6 The fitting parameter B has a range of -1e. 6 ~1e 6 Fitting parameters X nf2 The value range of is -1e6 to 1e6, and the value range of the fitting parameter C is -1e6. 6 ~1e 6 Fitting parameters X nf3 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6The fitting parameter D takes values ​​in the range of -1e 6 ~1e 6 Fitting parameters X nf4 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter E ranges from -1e. 6 ~1e 6 Fitting parameters X nf5 The value range is -1e -12 ~-1e -16 or 1e -16 ~1e -12 The fitting parameter F takes values ​​in the range of -1e 6 ~1e 6 .

[0065] Please refer to Figure 3 This is an example where the threshold voltage is based on electrical characteristic parameters. Figure 3 In the diagram, the channel width W is 1 micrometer, the channel length L is 0.15 micrometers, the horizontal axis is the cross exponent NF, and the vertical axis is the threshold voltage. It can be seen that the simulated threshold voltage data of the prior art (background art model) can only increase, while the simulated threshold voltage data of Embodiments 1 and 2 of this invention (this invention model) can both increase and decrease. The simulated data of Embodiments 1 and 2 of this invention are more consistent with the measured data (Silicon Data). Please refer to... Figure 4 and Figure 5 This is an example where the threshold voltage is based on electrical characteristic parameters. Figure 4 In the diagram, the channel width W is 6 micrometers, the channel length L is 0.15 micrometers, the horizontal axis is the cross exponent NF, and the vertical axis is the threshold voltage. Figure 5 In the diagram, the channel width W is 6 micrometers, the channel length L is 10 micrometers, the horizontal axis is the cross exponent NF, and the vertical axis is the threshold voltage. It can be seen that the simulated threshold voltage data of the prior art (background art model) can only increase under different sizes, and cannot sometimes increase and sometimes decrease with size changes. However, Embodiments 1 and 2 of this invention (this invention model) simulate the characteristics of MOS devices with different channel widths W and channel lengths L changing with different cross exponents NF. The simulation data of Embodiments 1 and 2 of this invention are more consistent with the measured data (Silicon Data).

[0066] In summary, the metal-oxide-semiconductor (MOS) modeling method provided in this embodiment of the invention can simulate measured data where the NF effect trend is both increasing and decreasing. Furthermore, it accurately simulates the characteristics of MOS devices with different channel widths W and channel lengths L as they change with different cross exponents NF.

[0067] The above are merely preferred embodiments of the present invention and do not constitute any limitation on the present invention. Any equivalent substitutions or modifications made by those skilled in the art to the technical solutions and content disclosed in the present invention without departing from the scope of the present invention shall be deemed to have remained within the protection scope of the present invention.

Claims

1. A modeling method for metal-oxide-semiconductor semiconductors, characterized in that, include: The initial sub-circuit simulation model is established as follows: ， Where Y_MF is the multi-interdigitation effect correction parameter, NF is the interdigitation index of the gate of the MOS device, and X is the multi-interdigitation index of the gate. nf0 A, X nf1 B, X nf2 C, X nf3 D, X nf4 E, X nf5 F and W are both fitting parameters, W is the channel width, L is the channel length, and X is the channel length. nf6 For the fitting parameters, NF A NF B NF C NF D NF E and NF F All are fitting parameters, namely the A, B, C, D, E and F powers of the cross exponents; We obtained multiple measured electrical characteristic parameters of metal-oxide-semiconductor semiconductors under different interdigitation, channel widths, and channel lengths. Adjust the fitting parameters so that the errors between the multi-interdigitation effect correction parameters obtained from simulations and the measured electrical characteristic parameters under different interdigitation, channel widths, and channel lengths are all within the set values. Then determine the corresponding value of the fitting parameters. When both the channel width W and channel length L are large, adjust the fitting parameter X of the W*L term. nf0 And A, when the channel width W or the channel length L is very large, adjust the fitting parameter X of the W term. nf1 and B or Fitting parameters X of the term nf2 And C, when the channel width W is very small or the channel length L is very small, debugging The fitting parameters dvth of the term nf3 and D or The fitting parameters dvth of the term nf4 And E, when both the channel width W and the channel length L are very small, adjust the fitting parameter X. nf5 and F, dvth nf6 It can be debugged at any time; The following multifidus effect model is established: Y = K + Y_MF, where K is a constant, Y is a correction parameter, and Y_MF is the correction parameter for the multifidus effect; The correction parameters include: long-channel threshold voltage without substrate bias effect, low-field mobility, first-order mobility degradation coefficient caused by longitudinal electric field, second-order mobility degradation coefficient caused by longitudinal electric field, channel length dependence coefficient of volume charge effect, gate voltage dependence coefficient of volume charge effect, and / or carrier saturation velocity.

2. The modeling method for metal-oxide-semiconductor as described in claim 1, characterized in that, Fitting parameters X nf0 The value range is -1e 12 ~1e 12 The fitting parameter A has a range of -1e. 12 ~1e 12 Fitting parameters X nf1 The value range is -1e 6 ~1e 6 The fitting parameter B has a range of -1e. 6 ~1e 6 Fitting parameters X nf2 The value range of is -1e6 to 1e6, and the value range of the fitting parameter C is -1e6. 6 ~1e 6 Fitting parameters X nf3 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter D takes values ​​in the range of -1e 6 ~1e 6 Fitting parameters X nf4 The value range is -1e -6 ~-1e -10 or 1e -10 ~1e -6 The fitting parameter E ranges from -1e. 6 ~1e 6 Fitting parameters X nf5 The value range is -1e -12 ~-1e -16 or 1e -16 ~1e -12 The fitting parameter F takes values ​​in the range of -1e 6 ~1e 6 .

3. The modeling method for metal-oxide-semiconductor as described in claim 1, characterized in that, The value of k includes 0.

21.

4. The modeling method for metal-oxide-semiconductor as described in claim 1, characterized in that, The set values ​​include 0.9% to 1.1%.

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