High-temperature heating device of wafer bonding machine

Abstract

The invention discloses a high-temperature heating device of a wafer bonding machine, and relates to the technical field of wafer bonding heating devices, and the high-temperature heating device comprises a heating whole which is used for being installed in a vacuum chamber and is composed of a heating controller, an area unit heating assembly, a transverse hinge guide rail, a positioning sliding seat and a directional adjustment heat compensation assembly. Under the cooperation of the directional adjustment heat compensation assembly and the area unit heating assemblies, the plurality of area unit heating assemblies are arranged to perform integral heating, and the directional adjustment heat compensation assembly is combined to perform accurate heat compensation on the area with non-uniform local temperature, so that the requirements of different wafer bonding processes on temperature uniformity, temperature uniformity and temperature uniformity can be better met. The bonding quality and the yield are greatly improved, the universality and the adaptability of the heating device are improved, the specific area of the wafer can be rapidly and effectively heated, the heating speed and the energy utilization efficiency are improved, meanwhile, the heat influence on other areas is reduced, and the wafer bonding quality is further guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer bonding heating devices, and specifically to a high-temperature heating device for a wafer bonder. Background Art

[0002] In the back-end process of semiconductor wafers, generally a special wax is first used to bond the wafer to a sapphire substrate, and this process is called wafer bonding. After bonding, the back surface of the wafer is thinned and polished. In the wafer bonding process, generally substrates and wafers of the same size are bonded, and during the bonding process, the wafer and the substrate need to be vacuum baked.

[0003] Currently, during the high-temperature heating process of a wafer bonder, it is necessary to ensure uniform heating of the wafer surface. Otherwise, it will lead to unstable bonding quality, such as inconsistent bonding strength and voids. Since traditional high-temperature heating devices mostly use resistance wire heating, the heating method is single, and it is difficult to achieve uniform heating of a large area of the wafer, resulting in obvious temperature differences between the edge and the center area of the wafer, leading to inconsistent bonding strengths at different positions of the bonded wafer. Furthermore, during the chip manufacturing process, the uneven bonding strength may cause problems such as delamination and cracking during subsequent processing or use of the chip, seriously affecting the reliability and service life of the chip. Therefore, a high-temperature heating device for a wafer bonder needs to be proposed. Summary of the Invention

[0004] The purpose of the present invention is to provide a high-temperature heating device for a wafer bonder to solve the problems mentioned in the above background art, that is, during the heating process, the heating method is single, it is difficult to achieve uniform heating of a large area of the wafer, resulting in obvious temperature differences between the edge and the center area of the wafer, leading to inconsistent bonding strengths at different positions of the bonded wafer, and further leading to problems such as delamination and cracking during subsequent processing or use of the chip in the chip manufacturing process, seriously affecting the reliability and service life of the chip.

[0005] To achieve the above purpose, the present invention provides the following technical solution: A high-temperature heating device for a wafer bonder, including a heating unit for installation inside a vacuum chamber;

[0006] The heating unit is composed of a heating controller, a regional unit heating component, a horizontal hinge guide rail, a positioning sliding seat, and a directional adjustment heat compensation component. The regional unit heating component is set to four groups or more. The horizontal hinge guide rail is installed on the side of the four groups of regional unit heating components. The directional adjustment heat compensation component is set to four groups. The four groups of directional adjustment heat compensation components form a position sliding adjustment through the positioning sliding seat at the side end of the horizontal hinge guide rail;

[0007] The directional adjustment heat supplement component includes a bearing rotating frame body, inside which a driving motor and a worm are respectively installed and set. The output end of the driving motor is connected to the worm. Inside the top end of the bearing rotating frame body, a worm gear is installed and set. The worm and the worm gear are meshed and connected. The central end of the worm gear is connected to a rotating shaft, and the rotating shaft is rotatably connected inside the bearing rotating frame body. On the outer wall surface of the rotating shaft, an angle rotating rod is tightly connected. On the side end of the angle rotating rod, a control driver is installed and set. On the side end of the control driver, an angle rotation sensor is installed and set. On the side end of the angle rotation sensor, a circumferential rotation driving motor box is tightly connected through a connecting claw frame. The output end of the circumferential rotation driving motor box is connected to an electric control rotating seat.

[0008] Preferably, inside the electric control rotating seat, an adjusting boom is rotatably connected through a rotating shaft column. On the side end of the adjusting boom, an adjusting support arm is rotatably connected. On the side end of the adjusting support arm, a distance-adjusting telescopic guide rod is installed and set. On the side end of the distance-adjusting telescopic guide rod, a visual positioning sensor is installed and set. On the side end of the visual positioning sensor, a frequency focusing intensity adjustment controller is installed and set.

[0009] Preferably, the frequency focusing intensity adjustment controller is composed of a frequency regulator and a focusing intensity regulator. On the side end of the frequency focusing intensity adjustment controller, a microwave control generator is installed and set.

[0010] Preferably, the regional unit heating component includes a heating area. On the left and right side ends of the heating area, a first gas circulation channel and a second gas circulation channel are respectively communicated. Inside the first gas circulation channel and the second gas circulation channel, high-precision thermistor temperature sensors are installed to monitor the temperature change of the edge position of the heating area in real time.

[0011] Preferably, the heating area is composed of a multi-layer composite heating structure. The bottom layer of the heating area is composed of an aluminum nitride ceramic substrate with high thermal conductivity. The middle layer uses a carbon nanotube film as a heating layer. The upper layer uses a transparent quartz glass layer. Inside the heating area, a plurality of micro induction coil heating element chambers are evenly distributed.

[0012] Preferably, according to the feedback information of the high-precision thermistor temperature sensor, the heating controller realizes the precise control of the temperature of the heating area by adjusting the power of the micro induction coil heating element chambers.

[0013] Preferably, on the top side ends of a plurality of the micro induction coil heating element chambers, micro drivers and synchronous rotating bearings are respectively installed and set. The output end of the micro driver is connected to a wafer carrier. The wafer carrier can accurately align with a specific part of the wafer when performing individual temperature control under the cooperation of the micro driver and the synchronous rotating bearing.

[0014] Preferably, heat insulation plates are installed on the sides of the heating area, and a gas diversion device is installed at the middle end of the heating area.

[0015] Preferably, the gas diversion device is composed of an electronically controlled adjustable diversion plate, air holes, and a fan. By changing the shape and angle of the electronically controlled adjustable diversion plate, the gas is guided to flow through the air holes along a predetermined path inside the heating area, the first gas circulation channel, and the second gas circulation channel.

[0016] Preferably, a bearing plate frame is tightly connected to the side end of the positioning sliding seat. The top of the bearing plate frame is tightly connected to the bottom of the bearing rotating frame body, and a fitting installation groove frame is installed on the top of the bearing plate frame.

[0017] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0018] 1. In the present invention, with the cooperation of the directional adjustment heat compensation component, under the action of the drive motor, drive worm, worm gear, rotating shaft, angle rotating rod, angle rotation sensor, control driver, and circumferential rotation drive motor box, the electronically controlled rotating seat is driven to rotate, thereby adjusting the positions of the adjustment boom and the adjustment support arm. Through the expansion and contraction of the distance adjustment telescopic guide rod, the visual positioning sensor is aligned with the area that needs heat compensation. According to the instructions of the heating controller, the visual positioning sensor and the frequency focusing intensity adjustment controller adjust the frequency and focusing intensity of the microwave control generator to perform precise microwave heat compensation on the target area, ensuring uniform heat distribution. Overall, multiple area unit heating components are set for overall heating, and the directional adjustment heat compensation component is combined to precisely compensate the local temperature non-uniform area, which can better meet the temperature uniformity requirements of different wafer bonding processes, greatly improving the bonding quality and the finished product rate. It can adapt to wafers of different shapes and sizes and complex temperature distribution situations, improving the versatility and adaptability of the heating device. It can quickly and effectively heat specific areas of the wafer, improving the heating speed and energy utilization efficiency, while reducing the thermal impact on other areas, further ensuring the quality of wafer bonding.

[0019] 2. In the present invention, with the cooperation of the regional unit heating component, the wafer carrier stage is adjusted to a suitable position through the cooperation of the micro driver and the synchronous rotating bearing, and the wafer to be bonded is placed on the wafer carrier stage. Then, the heating controller starts the regional unit heating component, and the heat is evenly transferred to the wafer on the wafer carrier stage based on the multi-layer composite heating structure of the heating region. During this process, the high-precision thermistor temperature sensors in the first gas circulation channel and the second gas circulation channel continuously monitor the temperature changes at the edge position of the heating region and feed the data back to the heating controller. The heating controller, according to this feedback information, precisely controls the temperature of the heating region by adjusting the power of the micro induction coil heating element chamber, ensuring uniform heating of the wafer, enabling timely detection and solution of the overall temperature non-uniformity problem caused by abnormal edge temperature, greatly improving the stability and uniformity of wafer heating, thereby enhancing the bonding quality, and achieving precise heating and individual temperature control of specific parts of the wafer, realizing all-round and real-time dynamic adjustment of the wafer heating process, greatly improving the accuracy and efficiency of temperature control, ensuring that the wafer is always in the optimal temperature state during the bonding process, effectively reducing bonding defects caused by temperature problems, and improving production efficiency and product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a front view structural schematic diagram of a high-temperature heating device for a wafer bonding machine according to the present invention;

[0021] Figure 2 is a side view structural schematic diagram of a high-temperature heating device for a wafer bonding machine according to the present invention;

[0022] Figure 3 is a structural schematic diagram of the installation position of the directional adjustment and heat compensation component in a high-temperature heating device for a wafer bonding machine according to the present invention;

[0023] Figure 4 is a structural schematic diagram of the directional adjustment and heat compensation component in a high-temperature heating device for a wafer bonding machine according to the present invention;

[0024] Figure 5 is for a high-temperature heating device for a wafer bonding machine according to the present invention Figure 4 of the enlarged structural schematic diagram at position A;

[0025] Figure 6 is a structural schematic diagram of the regional unit heating component in a high-temperature heating device for a wafer bonding machine according to the present invention;

[0026] Figure 7 is for a high-temperature heating device for a wafer bonding machine according to the present invention Figure 6 of the enlarged structural schematic diagram at position B.

[0027] In the figure: 1. Heating controller; 2. Area unit heating assembly; 21. Heating area; 22. First gas circulation channel; 23. Micro induction coil heating element chamber; 24. Second gas circulation channel; 25. Synchronous rotating bearing; 26. Wafer carrier stage; 27. Micro driver; 3. Heat insulation plate; 4. Lateral hinge guide rail; 5. Positioning sliding seat; 6. Directional adjustment heat supplement assembly; 61. Bearing rotating frame; 62. Driving motor; 63. Worm gear; 64. Rotating shaft; 65. Angle rotating rod; 66. Control driver; 67. Angle rotation sensor; 68. Circumferential rotation driving motor box; 69. Electrically controlled rotating seat; 690. Adjusting boom; 691. Adjusting support arm; 692. Distance adjusting telescopic guide rod; 693. Visual positioning sensor; 694. Frequency focusing intensity adjustment controller; 695. Microwave control generator; 696. Worm; 7. Gas diversion device; 8. Bearing plate frame. Detailed implementation mode

[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0029] Embodiment 1: In the present invention, refer to Figure 1 - Figure 7 As shown: A high-temperature heating device for a wafer bonding machine includes a heating unit for installation inside a vacuum chamber;

[0030] The heating unit is composed of a heating controller 1, an area unit heating assembly 2, a lateral hinge guide rail 4, a positioning sliding seat 5, and a directional adjustment heat supplement assembly 6. The area unit heating assembly 2 is provided with four or more groups. The lateral hinge guide rail 4 is installed on the side of the four groups of area unit heating assemblies 2. The directional adjustment heat supplement assembly 6 is provided with four groups. The four groups of directional adjustment heat supplement assemblies 6 are located at the side end of the lateral hinge guide rail 4 through the positioning sliding seat 5 to form a position sliding adjustment;

[0031] The directional regulation heat supplement component 6 includes a bearing rotating frame body 61. Inside the bearing rotating frame body 61, a driving motor 62 and a worm 696 are respectively installed and arranged. The output end of the driving motor 62 is connected to the worm 696. Inside the top end of the bearing rotating frame body 61, a worm gear 63 is installed and arranged. The worm 696 and the worm gear 63 are in meshing connection. The central end of the worm gear 63 is connected to a rotating shaft 64. The rotating shaft 64 is rotatably connected inside the bearing rotating frame body 61. On the outer wall surface of the rotating shaft 64, an angle rotating rod 65 is firmly connected. On the side end of the angle rotating rod 65, a control driver 66 is installed and arranged. On the side end of the control driver 66, an angle rotation sensor 67 is installed and arranged. On the side end of the angle rotation sensor 67, a circumferential rotation driving motor box 68 is firmly connected through a connecting claw frame. The output end of the circumferential rotation driving motor box 68 is connected to an electric control rotating seat 69.

[0032] Inside the electric control rotating seat 69, an adjusting boom 690 is rotatably connected through a rotating shaft column. On the side end of the adjusting boom 690, an adjusting support arm 691 is rotatably connected. On the side end of the adjusting support arm 691, a distance adjusting telescopic guide rod 692 is installed and arranged. On the side end of the distance adjusting telescopic guide rod 692, a visual positioning sensor 693 is installed and arranged. On the side end of the visual positioning sensor 693, a frequency focusing intensity adjusting controller 694 is installed and arranged.

[0033] The frequency focusing intensity adjusting controller 694 is composed of a frequency regulator and a focusing intensity regulator. On the side end of the frequency focusing intensity adjusting controller 694, a microwave control generator 695 is installed and arranged.

[0034] In a specific solution, after installing the overall high-temperature heating device inside the vacuum chamber, turn on the heating controller 1. Then, place the wafer to be bonded in the area unit heating component 2, so that the area unit heating component 2 slowly heats up according to a preset heating curve, making the wafer reach a basic temperature level to prepare for the subsequent bonding operation. Secondly, the heating controller 1 starts the area unit heating component 2 to conduct preliminary overall heating on the wafer. During the heating process, the area unit heating component 2 continuously monitors the temperature on the surface of the wafer and feeds the temperature data back to the heating controller 1 in real time. The heating controller 1 judges whether the temperature distribution of the wafer is uniform based on this feedback information. When it is found that the temperature is uneven, the temperature of a certain area is too high or too low, the heating controller 1 will trigger the directional adjustment heat supplement component 6 to act. The heating controller 1 determines the area position that needs heat supplement according to the temperature monitoring data and sends an instruction to the positioning sliding seat 5 to move it along the horizontal hinge guide rail 4 to the corresponding position. At the same time, the drive motor 62 inside the bearing rotating frame 61 starts, driving the worm 696 to rotate. Through meshing with the worm gear 63, it drives the rotating shaft 64 to rotate, thereby adjusting the angle of the angle rotating rod 65. The angle rotation sensor 67 continuously monitors the angle change of the angle rotating rod 65 and feeds the data back to the control driver 66 to ensure the accuracy of the angle adjustment. When the angle rotating rod 65 is adjusted to the appropriate angle, the circumferential rotation drive motor box 68 starts, driving the electric control rotating seat 69 to rotate, and then adjusting the positions of the adjusting boom 690 and the adjusting support arm 691. Through the telescoping of the distance-adjusting telescopic guide rod 692, the visual positioning sensor 693 is aligned with the area that needs heat supplement. After the visual positioning sensor 693 accurately positions the target area, the frequency focusing intensity adjustment controller 694 adjusts the frequency and focusing intensity of the microwave control generator 695 according to the instruction of the heating controller 1 to conduct precise microwave heat supplement on the target area. When the area that needs heat supplement is small and the temperature deviation is large, the frequency focusing intensity adjustment controller 694 will set a higher microwave frequency and a larger focusing intensity to achieve rapid and precise heat supplement. When the area is large and the temperature deviation is relatively small, it will be adjusted to a lower frequency and a more dispersed focusing intensity to ensure uniform heat distribution. Or when the temperature of the heat supplement area rises too fast, the heating controller 1 will instruct the frequency focusing intensity adjustment controller 694 to reduce the microwave frequency or decrease the focusing intensity. When the temperature rises too slowly, the frequency or the focusing intensity will be appropriately increased to conduct heat supplement in a larger area. During the entire heating process, the area unit heating component 2 and the directional adjustment heat supplement component 6 continuously monitor and adjust the temperature of the wafer. Once a new uneven temperature situation is found, the directional adjustment heat supplement component 6 will be started again to repeat the above processes of positioning, adjustment, and heat supplement to ensure that the wafer always maintains a uniform high-temperature state during the bonding process. Overall, by setting multiple area unit heating components 2 for overall heating and combining the directional adjustment heat supplement component 6 to precisely supplement heat to the local temperature uneven area,It can better meet the requirements of different wafer bonding processes for temperature uniformity, greatly improving the bonding quality and yield. It can adapt to wafers of different shapes and sizes as well as complex temperature distribution conditions, enhancing the versatility and adaptability of the heating device. It can quickly and effectively heat specific areas of the wafer, increasing the heating speed and energy utilization efficiency while reducing the thermal impact on other areas, further ensuring the quality of wafer bonding.

[0035] Embodiment 2: In the present invention, according to Figure 1 , Figure 2 , Figure 6 and Figure 7 shown, the regional unit heating component 2 includes a heating area 21. The left and right ends of the heating area 21 are respectively connected to a first gas circulation channel 22 and a second gas circulation channel 24. High-precision thermistor temperature sensors are installed in the first gas circulation channel 22 and the second gas circulation channel 24 to monitor the temperature changes at the edge position of the heating area 21 in real time.

[0036] The heating area 21 is composed of a multi-layer composite heating structure. The bottom layer of the heating area 21 is made of an aluminum nitride ceramic substrate with high thermal conductivity. The middle layer uses a carbon nanotube film as the heating layer, and the upper layer uses a transparent quartz glass layer. A plurality of micro induction coil heating element chambers 23 are evenly distributed inside the heating area 21.

[0037] The heating controller 1, based on the feedback information of the high-precision thermistor temperature sensor, controls the power of the micro induction coil heating element chambers 23 to achieve precise control of the temperature of the heating area 21.

[0038] Micro drives 27 and synchronous rotation bearings 25 are respectively installed at the top side ends of the plurality of micro induction coil heating element chambers 23. The output end of the micro drive 27 is connected to a wafer carrier 26. The wafer carrier 26, under the cooperation of the micro drive 27 and the synchronous rotation bearing 25, can accurately align with specific parts of the wafer during individual temperature control.

[0039] In a specific solution, through the cooperation of the micro-driver 27 and the synchronous rotating bearing 25, the wafer carrier stage 26 is adjusted to a proper position, and the wafer to be bonded is placed on the wafer carrier stage 26. Then, the heating controller 1 starts the regional unit heating component 2, and the multi-layer composite heating structure of the heating region 21 begins to work, enabling the underlying aluminum nitride ceramic substrate to quickly conduct the heat generated by the intermediate layer carbon nanotube film and uniformly transfer it to the wafer on the wafer carrier stage 26 through the transparent quartz glass layer. Multiple micro induction coil heating element chambers 23 work together and slowly heat up according to a preset heating curve, so that the wafer reaches a basic temperature level to prepare for the subsequent bonding operation. During this process, the high-precision thermistor temperature sensors in the first gas circulation channel 22 and the second gas circulation channel 24 continuously monitor the temperature changes at the edge position of the heating region 21 and feed the data back to the heating controller 1. The heating controller 1 adjusts the power of the micro induction coil heating element chambers 23 based on this feedback information to achieve precise control of the temperature in the heating region 21, ensuring uniform heating of the wafer. During the heating process, in addition to the temperature sensors in the first gas circulation channel 22 and the second gas circulation channel 24 monitoring the edge temperature of the heating region 21, the regional unit heating component 2 also continuously monitors the overall temperature of the wafer surface and feeds the temperature data back to the heating controller 1 in real time, enabling the heating controller 1 to judge whether the temperature distribution of the wafer is uniform based on this feedback information, and overall being able to promptly detect and solve the problem of uneven overall temperature caused by abnormal edge temperature, greatly improving the stability and uniformity of wafer heating, thereby enhancing the bonding quality, and achieving precise heating and individual temperature control of specific parts of the wafer, realizing all-round and real-time dynamic adjustment of the wafer heating process, greatly improving the accuracy and efficiency of temperature control, ensuring that the wafer is always in the best temperature state during the bonding process, effectively reducing bonding defects caused by temperature problems, and improving production efficiency and product quality.

[0040] Embodiment 3: In the present invention, as shown in Figure 1 and Figure 2 , a heat insulation plate 3 is installed on the side of the heating region 21, and a gas diversion device 7 is installed at the middle end of the heating region 21.

[0041] The gas diversion device 7 is composed of an electrically controlled adjustable diversion plate, air holes, and a fan. By changing the shape and angle of the electrically controlled adjustable diversion plate, the gas is guided to flow through the air holes along a predetermined path inside the heating region 21, the first gas circulation channel 22, and the second gas circulation channel 24.

[0042] A carrier plate frame 8 is tightly connected to the side end of the positioning sliding seat 5, the top of the carrier plate frame 8 is tightly connected to the bottom of the carrier rotating frame body 61, and a fitting installation groove frame is installed on the top of the carrier plate frame 8.

[0043] In a specific solution, during the above heating process, the heat insulation plate 3 reduces the loss of heat in the heating area 21 to the outside, ensuring that the heat mainly acts on the wafers in each area, avoiding interference in the heating of the wafers in each area. The gas flow guiding device 7 is composed of an electrically controlled adjustable deflector, air holes, and a fan. The fan provides the power for gas flow. By changing the shape and angle of the electrically controlled adjustable deflector, the gas is guided to flow inside the heating area 21, the first gas circulation channel 22, and the second gas circulation channel 24 along a predetermined path through the air holes, making the temperature distribution in the heating area more uniform, avoiding local overheating or overcooling, helping to discharge impurities or by-products generated during the heating process, ensuring the purity of the heating environment, and being conducive to improving the wafer bonding quality.

[0044] The wiring diagrams of the micro induction coil heating element chamber 23, the micro driver 27, the drive motor 62, the angle rotation sensor 67, the visual positioning sensor 693, the frequency focusing intensity adjustment controller 694, the microwave control generator 695, and the thermistor temperature sensor in the present invention belong to the common knowledge in the art. Their working principles are already known technologies, and their models are selected according to actual use. Therefore, the control methods and wiring arrangements of the micro induction coil heating element chamber 23, the micro driver 27, the drive motor 62, the angle rotation sensor 67, the visual positioning sensor 693, the frequency focusing intensity adjustment controller 694, the microwave control generator 695, and the thermistor temperature sensor will not be explained in detail.

[0045] Usage method and working principle of this device: First, through the cooperation of the micro driver 27 and the synchronous rotating bearing 25, the wafer carrier stage 26 is adjusted to a proper position, and the wafer to be bonded is placed on the wafer carrier stage 26. Then, the heating controller 1 starts the regional unit heating component 2, and the multi-layer composite heating structure based on the heating area 21 starts to work, enabling the bottom aluminum nitride ceramic substrate to quickly conduct the heat generated by the middle layer carbon nanotube film and uniformly transfer it to the wafer on the wafer carrier stage 26 through the transparent quartz glass layer. Multiple micro induction coil heating element chambers 23 work together and slowly increase the temperature according to the preset heating curve, so that the wafer reaches a basic temperature level to prepare for the subsequent bonding operation. During this process, the high-precision thermistor temperature sensors in the first gas circulation channel 22 and the second gas circulation channel 24 continuously monitor the temperature change at the edge position of the heating area 21 and feed the data back to the heating controller 1. The heating controller 1, based on this feedback information, precisely controls the temperature of the heating area 21 by adjusting the power of the micro induction coil heating element chambers 23 to ensure uniform heating of the wafer. During the heating process, in addition to the temperature sensors in the first gas circulation channel 22 and the second gas circulation channel 24 monitoring the edge temperature of the heating area 21, the regional unit heating component 2 also continuously monitors the overall temperature of the wafer surface and feeds the temperature data back to the heating controller 1 in real time, enabling the heating controller 1 to judge whether the temperature distribution of the wafer is uniform based on this feedback information. When it is found that the temperature is uneven, the regional temperature is too high or too low, the heating controller 1 will trigger the directional adjustment heat supplement component 6 to operate. The heating controller 1 determines the position of the area that needs heat supplement based on the temperature monitoring data and sends an instruction to the positioning sliding seat 5 to move it along the transverse hinge guide rail 4 to the corresponding position. At the same time, the drive motor 62 in the bearing rotating frame body 61 starts, driving the worm 696 to rotate. Through meshing with the worm gear 63, it drives the rotating shaft 64 to rotate, thereby adjusting the angle of the angle rotating rod 65. The angle rotation sensor 67 continuously monitors the angle change of the angle rotating rod 65 and feeds the data back to the control driver 66 to ensure the accuracy of the angle adjustment. After the angle rotating rod 65 is adjusted to a proper angle, the circumferential rotation drive motor box 68 starts, driving the electric control rotating seat 69 to rotate, and then adjusting the positions of the adjusting boom 690 and the adjusting support arm 691. Through the telescoping of the distance-adjusting telescopic guide rod 692, the visual positioning sensor 693 is aligned with the area that needs heat supplement. After the visual positioning sensor 693 precisely locates the target area, the frequency focusing intensity adjustment controller 694 adjusts the frequency and focusing intensity of the microwave control generator 695 according to the instruction of the heating controller 1 to perform precise microwave heat supplement on the target area. When the area that needs heat supplement is small and the temperature deviation is large, the frequency focusing intensity adjustment controller 694 will set a higher microwave frequency and a larger focusing intensity to achieve rapid and precise heat supplement. When the area is large and the temperature deviation is relatively small,It will be adjusted to a lower frequency and a more dispersed focusing intensity to ensure uniform heat distribution. Or when the temperature of the heat supplement area rises too fast, the heating controller 1 will instruct the frequency focusing intensity adjustment controller 694 to reduce the microwave frequency or decrease the focusing intensity. However, when the temperature rises too slowly, the frequency or the focusing intensity will be appropriately increased. During the entire heating process in a larger area, the area unit heating component 2 and the directional adjustment heat supplement component 6 continuously monitor and adjust the temperature of the wafer. Once a new non-uniform temperature situation is detected, the directional adjustment heat supplement component 6 will be restarted, repeating the above processes of positioning, adjustment, and heat supplement to ensure that the wafer always maintains a uniform high-temperature state during the bonding process. During the heating process, the heat insulation plate 3 reduces the loss of heat from the heating area 21 to the outside, ensuring that the heat mainly acts on the wafers in each area and avoiding interference in the heating of the wafers in each area. The gas diversion device 7 consists of an electrically controlled adjustable deflector, air holes, and a fan. The fan provides the power for gas flow. By changing the shape and angle of the electrically controlled adjustable deflector, the gas is guided to flow from the air holes along a predetermined path inside the heating area 21, the first gas circulation channel 22, and the second gas circulation channel 24, making the temperature distribution in the heating area more uniform.,

[0046] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.,

Claims

1. A high temperature heating device for a wafer bonding machine, comprising a heating unit, for installation in a vacuum chamber, characterized in that: The heating system is composed of a heating controller (1), a regional unit heating component (2), a transverse hinge guide rail (4), a positioning sliding seat (5) and a directional adjustment heating component (6); the regional unit heating component (2) is arranged in four groups or more; the transverse hinge guide rail (4) is installed on the sides of the four groups of regional unit heating components (2); the directional adjustment heating component (6) is arranged in four groups; the four groups of directional adjustment heating components (6) are located at the side ends of the transverse hinge guide rail (4) through the positioning sliding seat (5) to form position sliding adjustment; The directional adjustment heating supplement component (6) comprises a bearing rotating frame (61), a driving motor (62) and a worm (696) are respectively installed inside the bearing rotating frame (61), an output end of the driving motor (62) and the worm (696) are connected, a worm wheel (63) is installed inside the top end of the bearing rotating frame (61), the worm (696) and the worm wheel (63) are meshed, a rotating shaft (64) is connected to the center end of the worm wheel (63), and the rotating shaft (64) is located at the bearing rotating frame (61). A rotating connection is formed inside the rotating frame body (61), and an angle rotating rod (65) is fastened to the outer wall surface of the rotating shaft (64). A control driver (66) is installed on the side end of the angle rotating rod (65), and an angle rotation sensor (67) is installed on the side end of the control driver (66). The side end of the angle rotation sensor (67) is fastened to a circular rotation driving motor box (68) through a connecting claw frame, and the output end of the circular rotation driving motor box (68) is connected to an electric control rotating seat (69).

2. The high temperature heating device for wafer bonding machine according to claim 1, characterized in that: The inside of the electrically controlled rotating seat (69) is rotatably connected to an adjusting arm (690) via a rotating shaft column, and the side end of the adjusting arm (690) is rotatably connected to an adjusting support arm (691), and the side end of the adjusting support arm (691) is installed with a distance-adjusting telescopic guide rod (692), and the side end of the distance-adjusting telescopic guide rod (692) is installed with a visual positioning sensor (693), and the side end of the visual positioning sensor (693) is installed with a frequency focusing intensity adjustment controller (694).

3. The high temperature heating device for wafer bonding machine according to claim 2, characterized in that: The frequency focusing intensity adjustment controller (694) is composed of a frequency adjuster and a focusing intensity adjuster. A microwave control generator (695) is installed at the side end of the frequency focusing intensity adjustment controller (694).

4. The high temperature heating device for wafer bonding machine according to claim 1, characterized in that: The regional unit heating assembly (2) comprises a heating region (21), the left and right side ends of the heating region (21) are respectively connected to a first gas circulation channel (22) and a second gas circulation channel (24), and high-precision thermistor temperature sensors are installed in the first gas circulation channel (22) and the second gas circulation channel (24) for real-time monitoring of temperature changes at the edge of the heating region (21).

5. The high temperature heating device for wafer bonding machine according to claim 4, characterized in that: The heating region (21) is composed of a multi-layer composite heating structure, wherein the bottom layer of the heating region (21) is composed of an aluminum nitride ceramic substrate with high thermal conductivity, the middle layer uses a carbon nanotube film as a heating layer, and the upper layer uses a transparent quartz glass layer, and a plurality of micro-induction coil heating element chambers (23) are evenly distributed inside the heating region (21).

6. The high temperature heating device for wafer bonding machine according to claim 1, characterized in that: The heating controller (1) achieves precise control of the temperature of the heating area (21) by heating the power of the element chamber (23) through a micro induction coil according to feedback information from a high-precision thermistor temperature sensor.

7. The high temperature heating device for wafer bonding machine according to claim 6, characterized in that: A micro-driver (27) and a synchronous bearing (25) are respectively installed on the top side ends of the plurality of micro-induction coil heating element chambers (23); the output end of the micro-driver (27) is connected to a wafer carrier (26); the wafer carrier (26) cooperates with the micro-driver (27) and the synchronous bearing (25) to accurately align with a specific part of the wafer when performing individual temperature control.

8. The high temperature heating device for wafer bonding machine according to claim 4, characterized in that: A heat insulation plate (3) is installed on the side of the heating area (21), and a gas guide device (7) is installed at the middle end of the heating area (21).

9. The high temperature heating device for wafer bonding machine according to claim 8, characterized in that: The gas guide device (7) is composed of an electrically controlled adjustable guide plate, an air hole and a fan. By changing the shape and angle of the electrically controlled adjustable guide plate, the gas is guided to flow through the air hole along a predetermined path inside the heating area (21) and the first gas circulation channel (22) and the second gas circulation channel (24).

10. The high temperature heating device for wafer bonding machine according to claim 1, characterized in that: The side end of the positioning sliding seat (5) is fastened to a bearing plate frame (8), the top of the bearing plate frame (8) is fastened to the bottom of the bearing rotating frame (61), and the top of the bearing plate frame (8) is provided with an interlocking mounting groove frame.

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