High-roll-off ultra-wide stop-band three-dimensional microwave filter based on shielding substrate integrated waveguide

Abstract

The invention discloses a high-roll-off ultra-wide stop-band three-dimensional microwave filter based on a shielding substrate integrated waveguide. The high-roll-off ultra-wide stop-band three-dimensional microwave filter comprises a first metal layer, a substrate layer and a second metal layer which are sequentially arranged from bottom to top, the shape of the second metal layer is composed of at least one semicircle, a medium through hole is further formed in the substrate layer, the medium through hole is filled with a metal conductor column, and the metal conductor column is connected with the first metal layer and the second metal layer to form a closed resonant cavity; a first groove and a second groove are formed in the two sides of the upper surface of the second metal layer respectively, and the input metal sheet and the output metal sheet are inserted into the first groove and the second groove respectively in the first direction. The area of the filter can be reduced, and the filtering capacity is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuit manufacturing and packaging, and particularly relates to a high-roll-off ultra-wide stopband three-dimensional microwave filter based on a shielded substrate integrated waveguide. Background Art

[0002] The slowdown in the development trend of Moore's Law and the diversified development of integrated circuit applications are two important characteristics of the current integrated circuit industry. With the rise of products in fields such as smartphones, the Internet of Things, automotive electronics, high-performance computing, 5G, and artificial intelligence, especially the requirements for high-speed, high-frequency, and heterogeneous integration of multiple devices in the 5G field (5G millimeter wave (28 - 60 GHz), 5G Sub-6 GHz, 5G Internet of Things (Sub-1 GHz)), innovative development of advanced packaging technologies is needed.

[0003] Substrate Integrated Waveguide (SIW) technology can transmit signals on a planar dielectric substrate like a metal waveguide, ensuring low-radiation-loss transmission of signals. Therefore, it can replace rectangular waveguides and planar transmission line structures to continue promoting the development of microwave circuit systems. With the continuous development of processes, SIW can be integrated with most communication system components on a single substrate without the need for additional processes to manufacture specific devices for transition, thereby reducing signal transmission losses and suppressing parasitic phenomena.

[0004] However, current SIW microwave filters are usually large in area and cause additional signal losses during filtering. Summary of the Invention

[0005] Embodiments of the present invention provide a high-roll-off ultra-wide stopband three-dimensional microwave filter based on a shielded substrate integrated waveguide, which can solve the problems that current SIW microwave filters are usually large in area and cause additional signal losses during filtering.

[0006] A high-roll-off ultra-wide stopband three-dimensional microwave filter based on a shielded substrate integrated waveguide provided by embodiments of the present invention includes:

[0007] A first metal layer;

[0008] A substrate layer, the substrate layer is disposed on the upper surface of the first metal layer, and dielectric vias are arranged along the periphery of the second metal layer and penetrate through the substrate layer. Metal conductor columns are filled in the dielectric vias, and the metal conductor columns connect the first metal layer and the second metal layer to form a closed resonant cavity;

[0009] A second metal layer, the shape of the second metal layer consists of at least one semi - circle, the second metal layer is disposed on the upper surface of the substrate layer, and a first groove and a second groove are respectively disposed on both sides of the upper surface of the second metal layer;

[0010] An input metal sheet and an output metal sheet, the input metal sheet and the output metal sheet are respectively inserted into the first groove and the second groove along a first direction, wherein the first direction is a horizontal direction.

[0011] The beneficial effects of the embodiment of the present invention compared with the prior art are as follows: According to the filter provided by the present invention, compared with the current filter with a circular contour, the filter provided by the present invention is a semi - circle as a whole, and its area is smaller; compared with the filter with a semi - enclosed resonator cavity, the present invention forms a fully - enclosed resonator cavity through a metal conductor column and two upper and lower metal layers, which can enhance the filtering effect. Description of the Drawings

[0012] Figure 1 It is a schematic structural diagram of a high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0013] Figure 2 It is a schematic diagram of parameter description of a high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0014] Figure 3 It is a frequency response diagram within the pass - band of a high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0015] Figure 4 It is a schematic structural diagram of another high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0016] Figure 5 It is a frequency response diagram within the pass - band of another high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0017] Figure 6 It is a schematic structural diagram of yet another high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0018] Figure 7 It is a schematic diagram of parameter description of yet another high - roll - off ultra - wide stop - band three - dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0019] Figure 8Frequency response diagram within the passband of another three-dimensional microwave filter with high roll-off and ultra-wide stopband based on shielded substrate integrated waveguide provided by an embodiment of the present invention;

[0020] Figure 9 Schematic structural diagram of another three-dimensional microwave filter with high roll-off and ultra-wide stopband based on shielded substrate integrated waveguide provided by an embodiment of the present invention

[0021] Figure 10 Schematic diagram of parameter description of another three-dimensional microwave filter with high roll-off and ultra-wide stopband based on shielded substrate integrated waveguide provided by an embodiment of the present invention

[0022] Figure 11 Frequency response diagram within the passband of another three-dimensional microwave filter with high roll-off and ultra-wide stopband based on shielded substrate integrated waveguide provided by an embodiment of the present invention.

[0023] Description of reference numerals:

[0024] 1: First metal layer; 11: Fifth groove; 12: Eighth groove; 2: Substrate layer; 21: Metal conductor post; 22: First dielectric layer; 23: Second dielectric layer; 24: Third dielectric layer; 3: Second metal layer; 31: First groove; 32: Second groove; 33: Third groove; 34: Fourth groove; 35: Sixth groove; 36: Seventh groove; 41: Input metal sheet; 411: First metal sheet; 412: Second metal sheet; 413: Third metal sheet; 414: Fourth metal sheet; 415: Fifth metal sheet; 42: Output metal sheet. Detailed implementation manners

[0025] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. However, those skilled in the art should clearly understand that the present invention can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from interfering with the description of the present invention.

[0026] It should be understood that when used in the specification and appended claims of the present invention, the term "comprising" indicates the presence of the described features, wholes, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0027] It should also be understood that the term "and / or" used in the specification and appended claims of the present invention refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0028] As used in the specification of the present invention and the appended claims, the term "if" may be construed as "when" or "once" or "in response to determining" or "in response to detecting" depending on the context. Similarly, the phrase "if determined" or "if [the described condition or event] is detected" may be construed as meaning "once determined" or "in response to determining" or "once [the described condition or event] is detected" or "in response to detecting [the described condition or event]" depending on the context.

[0029] In addition, in the description of the specification of the present invention and the appended claims, the terms "first", "second", "third", etc. are only used for differentiating descriptions and cannot be construed as indicating or implying relative importance.

[0030] Reference to "one embodiment" or "some embodiments" or the like described in the specification of the present invention means that a specific feature, structure, or characteristic described in connection with that embodiment is included in one or more embodiments of the present invention. Thus, statements such as "in one embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments", etc. that appear in different places in this specification do not necessarily all refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "comprising", "including", "having", and their variants all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0031] The present invention will be further described in detail below in conjunction with specific embodiments, but the implementation manners of the present invention are not limited thereto.

[0032] Embodiment 1

[0033] Figure 1 The following shows a schematic structural diagram of a high-roll-off ultra-wide stopband three-dimensional microwave filter based on a shielded substrate integrated waveguide provided by an embodiment of the present invention. By way of example and not limitation, referring to Figure 1 , the filter 100 may include a first metal layer 1, a substrate layer 2, and a second metal layer 3.

[0034] In some embodiments, referring to Figure 1 in (a), the substrate layer 2 may be disposed on the upper surface of the first metal layer 1, and the second metal layer 3 may be disposed on the upper surface of the substrate layer 2. A dielectric through hole penetrating the substrate layer 2 may be provided in the substrate layer 2, and a metal conductor post 21 may be filled in the dielectric through hole. At the same time, referring to Figure 1 in (b), the dielectric through hole ( Figure 1The black dots (in [figure]) can be arranged along the periphery of the second metal layer 3. The shape of the second metal layer 3 can be composed of at least one semi-circle, and the metal conductor column 21 connects the first metal layer 1 and the second metal layer 3 to form two semi-circular closed resonant cavities.

[0035] Meanwhile, referring to Figure 1 in (b) of [figure], a first groove 31 and a second groove 32 are respectively arranged on both sides of the second metal layer 3, and the input metal sheet 41 and the output metal sheet 42 are respectively inserted into the first groove 31 and the second groove 32 along the first direction (referring to the direction indicated by the arrow 101). The structures of the first groove 31 and the second groove 32 are the same.

[0036] In a possible implementation manner, referring to Figure 1 in (a) of [figure], the substrate layer can sequentially include a first dielectric layer 22, a second dielectric layer 23, and a third dielectric layer 24 from bottom to top.

[0037] Exemplarily, referring to Figure 1 in (a) of [figure], a dielectric groove penetrating through the first dielectric layer 22 and the second dielectric layer 23 can be arranged on the upper surface of the second dielectric layer 23, and the third dielectric layer 24 also covers the side surface of the dielectric groove.

[0038] Exemplarily, the thickness h SiO2 of the third dielectric layer 24 is 2μm, and the thickness of the second dielectric layer 23 can be 200μm. Referring to Figure 2 and Figure 1 in (a) of [figure], the width w 1 of the first groove 31 can be 258μm, the diameter d TSV of the dielectric through hole is 30μm, and the center distance p TSV between every two dielectric through holes is 120μm.

[0039] Optionally, the materials of the first metal layer 1, the second metal layer 3, and the metal conductor column 21 can be copper, the materials of the first dielectric layer 22 and the third dielectric layer 24 can be silicon dioxide, and the material of the second dielectric layer 23 can be silicon.

[0040] In a possible implementation manner, referring to Figure 1 in (b) of [figure] and Figure 2 , the shape of the second metal layer 3 can be semi-circular, and the first metal layer 1 and the substrate layer 2 are rectangular.

[0041] Meanwhile, a semi-circular ring-shaped third groove 33 and a fourth groove 34 can also be arranged on the upper surface of the second metal layer 3. Referring to Figure 1 in (b) of [figure], the center of the third groove 33 is collinear with the center of the second metal layer 3 and is located inside the dielectric through hole. The fourth groove 34 extends from the center of the third groove 33 along the first direction to the arc edge of the third groove 33.

[0042] Exemplarily, referring to Figure 2 (a) in, the radius R1 of the filter 100 may be 3360 μm, and the length l of the third groove 33 along the first direction 1 is 50 μm. The distance w between the fourth groove 34 and the input port 3 is 3228 μm, and its width w along the second direction (referring to the direction indicated by the arrow 201 in Figure 2 ) is 100 μm, and the length l along the first direction 4 is 3150 μm. 2

[0043] Specifically, the first direction is a horizontal direction and is perpendicular to the bottom edge of the third groove, and the second direction is a horizontal direction and is parallel to the bottom edge of the third groove.

[0044] In one example, if the filter 100 is to achieve 20 dB out-of-band rejection of 3.8 times the fundamental frequency, then referring to Figure 2 (a) in, the input metal sheet 41 and the output metal sheet 42 may be symmetrically structured polygonal members. And, the width w of the input metal sheet 41 and the output metal sheet 42 2 is 150 μm.

[0045] Specifically, referring to Figure 3 the in-band frequency response diagram of the filter 100 prepared according to the above parameters shown, it can be seen that it achieves 20 dB out-of-band rejection of 3.8f 0 .

[0046] The working process of the filter 100 in this embodiment is as follows: First, electromagnetic waves are input from the input metal sheet 41 serving as the input port into the semi-circular SIW resonator while exciting electromagnetic waves; then, they are coupled and transmitted through the third groove 33 of the wide stopband filter to the output metal sheet 42 serving as the output port for output. Since the third groove 33 of the filter is etched around the semi-circular SIW cavity, the resonant frequency of the semi-circular SIW cavity is reduced, realizing a compact wide stopband semi-circular SIW filter.

[0047] According to the filter provided by the present invention, compared with the current filter with a circular contour, the filter provided by the present invention is overall semi-circular and has a smaller area; compared with the filter with a semi-closed resonator, the present invention forms a fully enclosed resonator through metal conductor columns and two upper and lower metal layers, which can enhance the filtering effect.

[0048] Embodiment 2

[0049] Based on the infrastructure of the filter provided in Embodiment 1, Figure 4 ​The schematic structural diagram of another three-dimensional microwave filter with a high roll-off and ultra-wide stopband based on a shielded substrate integrated waveguide provided by an embodiment of the present invention is shown. By way of example and not limitation, the filter 400 can be used to achieve 20 dB out-of-band rejection at 7.58 times the fundamental frequency.

[0050] In a possible implementation manner, similarly, referring to Figure 4 (a) in, the shape of the second metal layer 3 in the filter 400 is also semicircular, and the first metal layer 1 and the substrate layer 2 are also rectangular. A third groove 33 and a fourth groove 34 are also provided on the second metal layer 3, and their widths and lengths are also similar to those of the filter 100. The difference is that both the output metal sheet 42 and the input metal sheet 41 in the filter 400 can be composed of three metal sheets. The structures of the output metal sheet 42 and the input metal sheet 41 are symmetrical. Taking the input metal sheet 41 as an example, it can include a first metal sheet 411, a second metal sheet 412, and a third metal sheet 413.

[0051] Exemplarily, referring to Figure 4 (b) in, one end of the first metal sheet 411 and one end of the second metal sheet 412 are connected to form an "L" - shaped structure. The third metal sheet 413 is fixed in the middle of the second metal sheet 412, parallel to the first metal sheet 411 and in the opposite extending direction.

[0052] It should be understood that for the convenience of description, the structure of the output metal sheet is split in the present invention. In the actual manufacturing process, the user can also integrally manufacture the output metal sheet using a mold.

[0053] Exemplarily, if 20 dB out-of-band rejection at 7.58 times the fundamental frequency is to be achieved, referring to Figure 4 (a) in, both the first metal sheet 411 and the third metal sheet 413 are parallel to the first direction, the second metal sheet 412 is parallel to the second direction, and the third metal sheet 413 is inserted into the first groove 31 along the first direction. The length l 3 of the first metal sheet 411 along the first direction is 480 μm, and the width w 5 of the second metal sheet 412 along the second direction is 1454 μm.

[0054] Specifically, referring to Figure 5 the in-band frequency response diagram of the filter 400 prepared according to the above parameters shown, it can be seen that it achieves 20 dB out-of-band rejection at 7.58f 0 .

[0055] The working process of the filter in this embodiment is similar to that of the filter 100 in the above embodiment 1, but the lengths of the input and output metal sheets are about λ / 4 at 15 GHz long, so the resonance near 15 GHz is suppressed, and a compact ultra-wide stopband semi-circular SIW filter is achieved.

[0056] Embodiment 3

[0057] Based on Embodiment 2, Figure 6 The structural schematic diagram of another three-dimensional microwave filter with a high roll-off and ultra-wide stopband based on a shielded substrate integrated waveguide provided by an embodiment of the present invention is shown. By way of example and not limitation, the filter 600 may be a dual-band filter with a rectangularity of 1.55 and 2.17.

[0058] In some embodiments, referring to Figure 6 (a) in, similar to the filter 100 and the filter 400, the shape of the second metal layer 3 is semi-circular. A third groove 33 and a fourth groove 34 are also provided on the second metal layer 3.

[0059] In addition, referring to Figure 6 (b) in, a fifth groove 11 may also be provided on the lower surface of the first metal layer 1 of the filter 600. The filter 600 may further include a group of first resonant metal sheets and a group of second resonant metal sheets. The first resonant metal sheets are disposed in the fourth groove 34, and the second resonant metal sheets are disposed in the fifth groove 11.

[0060] Exemplarily, referring to Figure 7 (a) in, the radius R2 of the filter 600 may be 1800 μm, the thickness h SiO2 of the third dielectric layer 24 is 2 μm, the thickness of the second dielectric layer 23 is 200 μm, and the diameter d TSV of the first dielectric via is 30 μm.

[0061] In a possible implementation, referring to Figure 6 (a) in, similar to the filter 400, the center of the third groove 33 in the filter 600 is collinear with the center of the second metal layer and is located inside the dielectric via. The fourth groove 34 extends from the center of the third groove 33 along the first direction to the arc edge of the third groove.

[0062] Differently, referring to Figure 7 (a) in, the fourth groove 34 in the filter 600 is wider, and the distance w 8 between its end point and the bottom edge of the second metal layer 3 is 1207 μm, and the length l 8 of the fourth groove 34 along the first direction is 1510 μm.

[0063] In an example, a group of first resonant metal sheets may include metal sheets 511 - 5110, metal sheets 511 - 515, and metal sheets 516 - 5110 are symmetrically arranged in the fourth groove 34.

[0064] Exemplarily, referring to Figure 6 (a) in and Figure 7In (a) thereof, the width w of the metal sheets 511 and 516 in the second direction 9 is 120 μm, and the width w of the metal sheets 512, 513, 517, and 518 in the second direction 11 is 170 μm. The width w of the metal sheets 514 and 519 in the second direction 12 is 120 μm. The distance between the metal sheets 511 and 513 and the distance between the metal sheets 516 and 518, w 10 is 70 μm. The length l of the metal sheets 515 and 5110 in the first direction 9 is 1500 μm, and the distance w between the metal sheets 515 and 5110 13 is 20 μm.

[0065] In a possible implementation, referring to Figure 6 in (b), the fifth groove 11 may be an inverted "pin" - shaped groove that is wider at the top and narrower at the bottom.

[0066] Exemplarily, the minimum width w of the fifth groove 15 may be 310 μm, the maximum width w 14 may be 980 μm, the length l of the narrower part 12 may be 910 μm, and the length l of the wider part 10 may be 650 μm.

[0067] In an example, a group of first resonant metal sheets may include metal sheets 511 to 518. The metal sheets 511 - 514 and the metal sheets 515 - 518 are symmetrically arranged in the fifth groove 11.

[0068] Exemplarily, referring to Figure 6 in (b), the length l of the metal sheets 511 - 513 and the metal sheets 514 - 517 in the first direction 11 is 170 μm.

[0069] In a possible implementation, referring to Figure 6 in (a) and Figure 7 in (b), similar to the filter 400, the input metal sheet 41 and the output metal sheet 42 in the filter 600 may be composed of three metal sheets. The difference is that, referring to Figure 7 in (b), in the filter 600, the first metal sheet 411 and the third metal sheet 413 are parallel to the second direction (referring to the direction indicated by 701 in Figure 7 (b)), the second metal sheet 412 is parallel to the first direction, and the second metal sheet 412 is inserted into the first groove.

[0070] Exemplarily, referring to Figure 7In (a) and (b), in the input metal sheet 41, the width w of the third metal sheet 413 along the second direction 6 is 330 μm, and the length w of the first metal sheet 411 along the second direction is 7 is 2200 μm, and the length l of the second metal sheet 412 along the first direction is 4 It is 630μm.

[0071] In one example, since the length of the first metal sheet 411 exceeds the radius of the filter 600, if the structures of the output metal sheet and the input metal sheet are completely symmetrical, partial overlap will occur, so the structure of the output metal sheet 42 is adjusted. In the output metal sheet 42, one end of the third metal sheet and the second metal sheet are connected to form an "L"-shaped structure, and one end of the first metal sheet is staggered and connected to the "L"-shaped structure. Similarly, the first metal sheet and the third metal sheet are parallel to the second direction, the second metal sheet is parallel to the first direction, and the second metal sheet is inserted in the second groove.

[0072] For example, see Figure 7 In (a) and (b), in the output metal sheet 42, the length l of the second metal sheet 5 is 470 μm, and the distance l between the first metal sheet and the third metal sheet is 6 is 20μm.

[0073] Specifically, see Figure 8 The frequency response diagram within the passband of the filter 600 prepared according to the above parameters shows that it realizes a highly selective dual-passband filter with rectangular coefficients of 1.55 and 2.17.

[0074] The working process of the filter 600 of this embodiment is as follows: first, the electromagnetic wave is input from the input metal sheet to the semicircular SIW resonant cavity and the electromagnetic wave is excited at the same time; then, on one side, it is coupled and transmitted to the output metal sheet output through the loaded three-dimensional spiral inductor and capacitor resonant unit (i.e., metal sheets 511-518 and metal sheets 521-5210), and on the other side, the electromagnetic wave is directly coupled from the input metal sheet to the output metal sheet output, thereby realizing a highly selective dual-band filter.

[0075] Example 4

[0076] Based on Example 3, Figure 9 The structure diagram of another high roll-off ultra-wide stopband three-dimensional microwave filter based on shielded substrate integrated waveguide is shown in the embodiment of the present invention. As an example but not limitation, the filter 900 can be a highly selective bandpass filter with a rectangular coefficient of 1.23.

[0077] In some embodiments, see Figure 9In (a) thereof, the shape of the second metal layer 3 may be a trapezoid with arc edges formed by two tangent semi - circles, and a sixth groove 35 and a seventh groove 36 may be provided on the second metal layer 3.

[0078] In addition, referring to Figure 9 in (b) thereof, similar to the filter 600, an eighth groove 12 may also be provided on the lower surface of the first metal layer 1 in the filter 900. The filter 900 may further include a group of third resonant metal sheets and fourth resonant metal sheets. The third resonant metal sheets are disposed in the seventh groove 36, and the fourth resonant metal sheets are disposed in the eighth groove 12.

[0079] Exemplarily, in the filter 900, the thickness h SiO2 of the third dielectric layer 24 is 2μm, the thickness of the second dielectric layer 23 is 200μm, and the diameter d TSV of the first dielectric via - hole is 30μm. Referring to Figure 10 , the height l 17 of the sixth groove 35 is 700μm, and w 21 is 1237μm.

[0080] Optionally, referring to Figure 10 in (a) thereof, the lower bottom edge of the sixth groove 35 may be a discontinuous circular - ring line segment, and the distance w 22 between its break points and end points is 1310μm.

[0081] In a possible implementation, referring to Figure 9 in (a) thereof, the sixth groove 35 may be a ring - shaped trapezoid with arc edges, whose geometric center is the same as that of the second metal layer 3 and is located inside the substrate layer 2. The seventh groove 36 may be an inverted 'pin' - shaped groove that is wider at the top and narrower at the bottom and is connected to the upper bottom edge of the sixth groove 35.

[0082] In one example, a group of third resonant metal sheets may include metal sheets 531 - 538, where the metal sheets 531 - 534 and the metal sheets 535 - 538 are symmetrically arranged.

[0083] Exemplarily, referring to Figure 10 in (a) thereof, the length w 17 of the metal sheets 532 and 536 is 110μm, and the length w 18 of the metal sheets 531 and 535 is 200μm. For the metal sheets 533 and 537, w 19 is 100μm, w 20 is 50μm, the length l 15 is 360μm, l 16 is 260μm. The length l 14 of the metal sheets 534 and 538 is 80μm.

[0084] In a possible implementation, referring to Figure 9 (b) in, the eighth groove 12 may be an inverted "pin" - shaped groove that is wider at the top and narrower at the bottom.

[0085] Exemplarily, referring to Figure 10 (a) in, the maximum width w of the eighth groove 12 23 is 920 μm, w 24 is 330 μm, and the minimum width w 25 is 260 μm. The length l of the wider part 19 is 280 μm, and the length l of the narrower part 20 is 300 μm.

[0086] In an example, a group of fourth resonant metal sheets may include metal sheets 531 - 536, where the metal sheets 531 - 532 and the metal sheets 534 - 536 are symmetrically arranged.

[0087] Exemplarily, referring to Figure 10 (b) in, where the length l of the metal sheets 531, 532, 534, 535 18 is 220 μm, and the spacing between the metal sheet 533 and the metal sheet 532, and the spacing w between the metal sheet 536 and the metal sheet 535 26 is 40 μm.

[0088] In a possible implementation, the structures of the input metal sheet 41 and the output metal sheet 42 in the filter 900 are completely symmetric. Taking the input metal sheet 41 as an example, it may include a fourth metal sheet 414 and a fifth metal sheet 415. One end of the fourth metal sheet 414 and the fifth metal sheet 415 are connected to form an "L" - shaped structure, and the fourth metal sheet 414 is inserted into the first groove along the first direction.

[0089] Exemplarily, referring to Figure 9 (a) in and Figure 10 (b) in, the length l of the fourth metal sheet 414 along the first direction 13 is 450 μm, and the width w of the fifth metal sheet 415 along the second direction 16 is 850 μm.

[0090] Specifically, referring to Figure 11 the in - band frequency response diagram of the filter 400 prepared according to the above parameters shown, it can be seen that it realizes a high - selectivity band - pass filter with a rectangular coefficient of 1.23.

[0091] The working process of the filter 600 in this embodiment is as follows: First, electromagnetic waves are input from the input metal sheet into the semi-circular SIW resonator, and electromagnetic waves are excited simultaneously; then, through the resonant units of the three-dimensional spiral inductors and capacitors loaded (i.e., metal sheets 531-536 and metal sheets 514-548), the electromagnetic waves are coupled and transmitted to the output metal sheet for output, realizing a high-selectivity band-pass filter.

[0092] According to the filter provided by the present invention, by etching grooves on the second metal layer composed of semi-circles, the resonant frequency of the resonator can be reduced, a more compact area can be achieved, and 20 dB out-of-band rejection at 3.8f can also be realized. 0 The manufacturing process is simple.

[0093] Furthermore, after changing the shape parameters of the input and output metal sheets, the 20 dB out-of-band rejection can be increased to 7.58f 0 , realizing an ultra-wide stopband filtering effect; by further improving the shapes of the input and output metal sheets and loading three-dimensional spiral inductors and capacitors on the upper and lower metal sheets, direct coupling between the input and output ends can be achieved, thereby realizing a high-selectivity dual-band filter (the rectangular coefficient (BW-20dB / BW-3dB) is 1.55 and 2.17). By setting the shape of the filter to an arc-edge trapezoid, the area of the filter can be further reduced. At the same time, by loading three-dimensional spiral inductors and folded capacitors thereon, a high-selectivity filter with a rectangular coefficient (BW-20dB / BW-1dB) of 1.35 can be realized.

[0094] In the above embodiments, the descriptions of each embodiment have their own focuses. For the parts not detailed or recorded in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

Claims

1. A high roll-off ultra-wide stopband three-dimensional microwave filter based on shielded substrate integrated waveguide, characterized in that: include: A first metal layer; A substrate layer, the substrate layer is arranged on the upper surface of the first metal layer, the substrate layer is provided with dielectric through holes arranged along the periphery of the second metal layer and penetrating the substrate layer, the dielectric through holes are filled with metal conductor columns, and the metal conductor columns connect the first metal layer and the second metal layer to form a closed resonant cavity; A second metal layer, wherein the shape of the second metal layer is composed of at least one semicircle, the second metal layer is arranged on the upper surface of the substrate layer, and the first groove and the second groove are respectively arranged on both sides of the upper surface of the second metal layer; An input metal sheet and an output metal sheet are respectively inserted into the first groove and the second groove along a first direction, wherein the first direction is a horizontal direction.

2. The three-dimensional microwave filter according to claim 1, characterized in that: The substrate layer comprises: a first dielectric layer, wherein the first dielectric layer is disposed on an upper surface of the first metal layer; A second dielectric layer, the second dielectric layer is arranged on the upper surface of the first dielectric layer and is made of a material different from that of the first dielectric layer; wherein a dielectric groove penetrating the first dielectric layer and the second dielectric layer is further arranged on the second dielectric layer, and the dielectric through hole is arranged in the dielectric groove; A third dielectric layer is disposed on the upper surface of the second dielectric layer and covers the side surfaces of the dielectric groove. The third dielectric layer and the first dielectric layer are made of the same material.

3. The three-dimensional microwave filter according to claim 2, characterized in that: The second metal layer is in a semicircular shape; Among them, the upper surface of the second metal layer is also provided with a semicircular third groove and a fourth groove; the center of the third groove is collinear with the center of the second metal layer and the third groove is located on the inner side of the medium through hole; the fourth groove extends from the center of the third groove along the first direction to the arc edge of the third groove, and the first direction is perpendicular to the bottom edge of the third groove.

4. The three-dimensional microwave filter according to claim 3, characterized in that: The input metal sheet and the output metal sheet are symmetrical broken line components.

5. The three-dimensional microwave filter according to claim 3, characterized in that: The input metal sheet includes a first metal sheet, a second metal sheet and a third metal sheet; Among them, one end of the first metal sheet and the second metal sheet are connected to form an "L"-shaped structure, and the third metal sheet is fixed to the middle of the second metal sheet, parallel to the first metal sheet and extending in the opposite direction.

6. The three-dimensional microwave filter according to claim 5, characterized in that: The output metal sheet is symmetrical in structure to the input metal sheet; the first metal sheet and the third metal sheet are parallel to the first direction, the second metal sheet is parallel to the second direction, and the third metal sheet is inserted into the first groove along the first direction; wherein the second direction is parallel to the bottom edge of the third groove.

7. The three-dimensional microwave filter according to claim 5, characterized in that: The first metal sheet and the third metal sheet are parallel to a second direction, the second metal sheet is parallel to the first direction, and the second metal sheet is inserted into the first groove; wherein the second direction is parallel to the bottom edge of the third groove; The lower surface of the first metal layer is provided with a fifth groove; the three-dimensional microwave filter further comprises a group of first resonant metal plates and a group of second resonant metal plates, the first resonant metal plates are arranged in the fourth groove, and the second resonant metal plates are arranged in the fifth groove.

8. The three-dimensional microwave filter according to claim 1, characterized in that: The shape of the second metal layer is an arc-edge trapezoid; Wherein, a sixth groove and a seventh groove are further provided on the upper surface of the second metal layer. The sixth groove is an annular arc-edge trapezoid structure, and its geometric center is the same as that of the second metal layer, and the sixth groove is inside the dielectric through hole; the seventh groove is an inverted "pin" shaped groove with a wider upper part and a narrower lower part, and the seventh groove communicates with the upper bottom edge of the sixth groove.

9. The three-dimensional microwave filter according to claim 8, characterized in that: The structure of the output metal sheet is symmetrical to that of the input metal sheet. The input metal sheet includes a fourth metal sheet and a fifth metal sheet; one ends of the fourth metal sheet and the fifth metal sheet are connected to form an "L" shaped structure, and the fourth metal sheet is inserted into the first groove along the first direction; Wherein, an eighth groove is further provided on the lower surface of the first metal layer. The three-dimensional microwave filter further includes a group of third resonant metal sheets and a group of fourth resonant metal sheets. The third resonant metal sheets are arranged in the seventh groove, and the fourth resonant metal sheets are arranged in the eighth groove.

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