A semiconductor laser with integrated lateral pump source

Abstract

The present invention relates to the field of laser technology, and in particular to a semiconductor laser with an integrated lateral pump source, comprising: a housing having a first mounting cavity and a second mounting cavity; a gain chip located in the first mounting cavity, the gain chip being directly opposite the second mounting cavity; an annular lateral pump source located in the first mounting cavity, the annular lateral pump source being annular and being sleeved around the outer ring of the gain chip, the annular lateral pump source emitting pump light toward the annular side of the gain chip and toward the side of the gain chip; a heat dissipation structure located on the top surface of the gain chip facing the second mounting cavity, the heat dissipation structure extending from the first mounting cavity into the second mounting cavity, the side surface of the heat dissipation structure located in the second mounting cavity being in contact with the side wall of the second mounting cavity; and an output coupling mirror located in the light exit window, the output coupling mirror being located on the side of the heat dissipation structure away from the gain chip. The present invention is at least beneficial for improving the performance of the laser.

Description

Technical Field

[0001] The invention belongs to the technical field of lasers, and in particular relates to a semiconductor laser with an integrated lateral pump source. Background Art

[0002] Optically pumped vertical external cavity surface emitting semiconductor lasers combine the advantages of solid-state lasers and semiconductor lasers. Their unique external resonant cavity structure can regulate the output mode. The semiconductor material band engineering design combined with intracavity frequency conversion can achieve a wide wavelength coverage range from visible light to near-infrared bands. Optically pumped vertical external cavity surface emitting semiconductor lasers have the advantages of high beam quality, high power, and wavelength tunability. They have been widely used in laser medicine, laser processing, quantum technology and other fields.

[0003] However, traditional optically pumped vertical external cavity surface emitting semiconductor lasers require a separate pump source to provide laser pumping, which cannot meet the application requirements of small-volume light source modules. Summary of the Invention

[0004] In view of this, the present invention aims to provide a semiconductor laser with an integrated lateral pump source, which is at least beneficial to improving the performance of the laser.

[0005] To achieve the above object, the technical solution created by the present invention is implemented as follows:

[0006] The present invention provides a semiconductor laser with an integrated lateral pump source, comprising: a housing having a first mounting cavity and a second mounting cavity that are interconnected and arranged in sequence along a vertical direction, the second mounting cavity being connected to the outside through a light exit window; a gain chip, the gain chip being located in the first mounting cavity and facing the second mounting cavity; an annular lateral pump source located in the first mounting cavity, the annular lateral pump source being annular and sleeved around the outer ring of the gain chip, the annular lateral pump source emitting pump light toward the annular side surface of the gain chip and toward the side surface of the gain chip; a heat dissipation structure, the heat dissipation structure being located on a top surface of the gain chip facing the second mounting cavity, the heat dissipation structure extending from the first mounting cavity into the second mounting cavity, the side surface of the heat dissipation structure located in the second mounting cavity being in contact with the side wall of the second mounting cavity; and an output coupling mirror, the output coupling mirror being located in the light exit window and located on a side of the heat dissipation structure away from the gain chip.

[0007] Furthermore, the gain chip is a vertical external cavity surface emitting semiconductor laser chip.

[0008] Furthermore, the gain chip includes a substrate, a DBR layer, an active region, and a window layer arranged in sequence along a vertical direction; wherein the active region includes a quantum well layer and barrier layers located on opposite sides of the quantum well layer, and the thickness of the barrier layer is in the range of 20nm~200nm.

[0009] Furthermore, the annular lateral pump source is an annular edge-emitting semiconductor laser, or the annular lateral pump source includes a plurality of edge-emitting laser units arranged along a ring, the spacing between two adjacent edge-emitting laser units is not greater than 2 mm, and the space between two adjacent edge-emitting laser units is filled with a reflective material with high reflectivity to the pump light.

[0010] Furthermore, the material of the heat dissipation structure is a highly thermally conductive transparent material.

[0011] Furthermore, the highly thermally conductive transparent material includes diamond or sapphire.

[0012] Furthermore, the surface of the heat dissipation structure has an anti-reflection film.

[0013] Furthermore, the second installation cavity includes a first cavity and a second cavity arranged in sequence in a direction away from the first installation cavity, and the heat dissipation structure is located in the first cavity; along the direction perpendicular to the axial direction of the annular lateral pump source, the size of the first installation cavity is larger than the size of the first cavity, and the size of the first cavity is smaller than the size of the second cavity.

[0014] Furthermore, the gain chip and the annular lateral pump source are both arranged on the bottom inner wall of the first installation cavity.

[0015] Compared with the prior art, the present invention can achieve the following beneficial effects: the semiconductor laser with an integrated lateral pump source provided by the present invention integrates a gain chip and an annular lateral pump source, which is conducive to miniaturization and integration of the semiconductor laser with an integrated lateral pump source. By providing a thicker barrier layer, the pump light absorption layer in the gain chip is ensured to have a larger thickness, thereby improving the gain chip's absorption efficiency of the lateral pump light. The annular lateral pump source and the gain chip are both bonded to the bottom inner wall of the first mounting cavity, and the top of the gain chip is bonded to a heat dissipation structure, which is in contact with the housing, thereby achieving highly efficient heat dissipation, thereby improving the performance of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which constitute part of the present invention, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings:

[0017] Figure 1 A schematic structural diagram of a semiconductor laser with an integrated lateral pump source according to an embodiment of the present invention;

[0018] Figure 2 Another structural schematic diagram of a semiconductor laser with an integrated lateral pump source according to an embodiment of the present invention;

[0019] Figure 3 A top view of a semiconductor laser with an integrated lateral pump source according to an embodiment of the present invention. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0021] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0022] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0023] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art can understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0024] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0025] refer to Figures 1 to 3The present invention provides a semiconductor laser with an integrated lateral pump source, comprising: a housing 101, wherein the housing 101 has a first mounting cavity 106 and a second mounting cavity that are connected and arranged in sequence along the vertical direction, wherein the second mounting cavity is connected to the outside through a light exit window 109; a gain chip 105, wherein the gain chip 105 is located in the first mounting cavity 106, and the gain chip 105 is directly opposite to the second mounting cavity; an annular lateral pump source 104 located in the first mounting cavity 106, wherein the annular lateral pump source 104 is annular and is sleeved on the outside of the gain chip 105. The annular lateral pump source 104 emits pump light toward the annular side of the gain chip 105. The heat dissipation structure 103 is located on the top surface of the gain chip 105 facing the second mounting cavity, and extends from the first mounting cavity 106 into the second mounting cavity. The side surface of the heat dissipation structure 103 located in the second mounting cavity contacts the side wall of the second mounting cavity. The output coupling mirror 102 is located at the light exit window 109 and on the side of the heat dissipation structure 103 away from the gain chip 105. The annular lateral pump source 104 uniformly injects pump light into the gain chip 105, solving the problem of uneven pump light injection in traditional optically pumped vertical external cavity surface emitting semiconductor lasers. It avoids wavelength drift caused by temperature gradient distribution in the pumping region of the gain chip, effectively reduces the generation of high-order modes, and not only has a compact structure, but also can output high-quality fundamental mode laser light.

[0026] The light-emitting region 1051 at the top of the gain chip 105 corresponds to the laser output region. Under optical pumping from the annular lateral pump source 104, the gain chip 105 cooperates with the output coupling mirror 102 to achieve laser output. The output coupling mirror 102 and the heat dissipation structure 103 are spaced apart. The housing 101 can be designed based on the distance between the output coupling mirror 102 and the gain chip 105 to ensure that the distance between the output coupling mirror 102, located at the light-emitting window 109, and the gain chip 105 meets the resonant cavity length requirement.

[0027] In some embodiments, reference Figure 2 The semiconductor laser with integrated lateral pumping source also includes an annular heat dissipation window 110, which is sleeved on the outer ring of the annular lateral pumping source 104, and the inner ring side wall of the annular heat dissipation window 110 is in contact with the outer ring side wall of the annular lateral pumping source 104, and the outer ring side wall of the annular heat dissipation window 110 is in contact with the annular inner side wall of the first mounting cavity 106. In this way, the heat of the annular lateral pumping source 104 can be quickly and efficiently introduced into the shell through the annular heat dissipation window 110, thereby achieving efficient heat dissipation of the annular lateral pumping source 104, which is beneficial to improving the reliability and stability of the semiconductor laser with integrated lateral pumping source.

[0028] In some embodiments, the material of the annular heat dissipation window 110 may be a highly thermally conductive insulating material such as thermal grease or diamond.

[0029] In some embodiments, the gain chip 105 and the annular lateral pump source 104 are both disposed on the bottom inner wall of the first mounting cavity 106 .

[0030] In some embodiments, the gain chip 105 is a vertical external cavity surface emitting semiconductor laser chip. It should be noted that the vertical external cavity surface emitting semiconductor laser chip in the present invention is an optically pumped structure. The epitaxial structure of the vertical external cavity surface emitting semiconductor laser chip does not require doping, and the chip manufacturing process is simple. The output power can be scaled by controlling the pump source, adjusting the pumping area, and adjusting the power density of the pump light.

[0031] The material system of the vertical external cavity surface emitting semiconductor laser chip can be selected according to the wavelength band requirements of the output laser. For example, if the required laser wavelength is in the range of 600nm~1200nm, the vertical external cavity surface emitting semiconductor laser chip can use the gallium arsenide material system; if the required laser wavelength is in the range of 1300nm~1700nm, the vertical external cavity surface emitting semiconductor laser chip can choose the indium phosphide material system.

[0032] In some embodiments, the gain chip 105 includes a substrate, a DBR layer, an active region, and a window layer arranged in a vertical sequence. The active region includes a quantum well layer and barrier layers located on opposite sides of the quantum well layer. The barrier layers have a thickness ranging from 50 nm to 500 nm. The barrier layers serve as pump light absorption layers. Increasing the thickness of the barrier layers can improve the efficiency of the gain chip 105 in absorbing lateral pump light and improve the uniformity of carrier injection, thereby enhancing the quality of the output beam.

[0033] Since the annular lateral pump source 104 performs circular pumping on the gain chip 105 around the gain chip 105, in order to alleviate the problem of a relatively narrow light absorption area of the lateral pumping, in some embodiments, the number of quantum well layers can be increased. For example, the number of quantum well layers in the active region is in the range of 5 to 50, each quantum well layer has barrier layers on both sides, and multiple quantum well layers are arranged at intervals. In this way, by increasing the number of quantum well layers and combining them with relatively thick barrier layers, a higher quantum well gain can be provided, effectively increasing the lateral absorption area, thereby improving the absorption efficiency of the gain chip for pump light, improving the uniformity of carrier injection, and thus facilitating the improvement of the quality of the output light beam.

[0034] Lateral pumping can avoid temperature gradients in the pump region caused by tilted pumping on the gain chip surface, which can suppress multimode lasing. It also avoids the layer-by-layer degradation of pump light caused by absorption in the active region associated with end-pumping (tilted pumping on the gain chip surface or bottom pumping). Lateral pumping enables uniform injection across multiple quantum well layers.

[0035] In some embodiments, the annular lateral pump source 104 is an annular edge-emitting semiconductor laser, and the light outlet of the annular edge-emitting semiconductor laser can be made to face the gain chip 105 through a waveguide structure and cavity surface coating.

[0036] In some embodiments, the diameter of the inner ring of the annular edge-emitting semiconductor laser is between 1 cm and 20 cm, preferably in the range of 2 cm to 5 cm; the annular edge-emitting semiconductor laser includes an annular active area, a top waveguide, an upper electrode 1041 and a lower electrode, the annular active area is annular, the cross-section of the annular active area is rectangular or trapezoidal, the width of the cross-section of the annular active area is between 5 microns and 5 mm, and the height of the cross-section of the annular active area is between 0.5 microns and 5 mm. The annular active area includes an annular active area and an annular distributed Bragg reflector or an annular high reflector located on the outer ring of the annular active area. The top surface of the annular active area has multiple waveguides, each waveguide extends radially along the annular active area to guide the laser to be output toward the central axis of the annular active area. The thickness of the waveguide can be in the range of 5 microns to 5 mm. The material of the waveguide can include semiconductor material or low-loss dielectric material. The semiconductor material can be GaAs-based, InP-based or silicon-based, etc. The low-loss dielectric material can be sapphire, fused quartz or aluminum nitride, etc. The material of the annular active area may include GaAs, InP or GaN; the upper electrode is located on the top surface of the annular active area, and the lower electrode is located at the bottom of the annular active area. The lower electrode can be annular or disk-shaped, and the distance between the upper electrode and the lower electrode is greater than or equal to 1.5 times the width of the annular active area.

[0037] In some embodiments, the annular lateral pump source 104 includes a plurality of edge-emitting laser units arranged along a ring. The spacing between two adjacent edge-emitting laser units is no more than 2 mm, and the space between two adjacent edge-emitting laser units is filled with a thermally conductive material coated with a high-reflection film for pump light. The thermally conductive material can be diamond, sapphire, high-purity copper, etc. An insulating structure is provided between the thermally conductive material and the laser to achieve insulation treatment between the thermally conductive material and the laser. This not only helps prevent the pump light from overflowing from between two adjacent edge-emitting laser units, but also helps improve heat dissipation performance.

[0038] In some embodiments, a plurality of edge-emitting laser units arranged in a ring are disposed on an annular substrate, and the diameter of the inner ring of the annular substrate is between 1 cm and 20 cm, preferably between 2 cm and 5 cm; the normal of the light-emitting surface of the edge-emitting laser unit points to the central axis of the annular substrate, and the angular deviation is less than or equal to ±0.5°; the wavelength of the edge-emitting laser unit can be in the range of 750 nm to 1000 nm, preferably 808 nm, 940 nm or 976 nm; the single-point power is in the range of 1 W to 10 W (continuous), or, the single-point power is in the range of 10 W to 50 W (pulsed); the fast-axis divergence angle is in the range of 10° to 80°, and the slow-axis divergence angle is in the range of 3° to 20°. The top of the edge-emitting laser unit is provided with a waveguide. The outer side wall of the edge-emitting laser unit away from the central axis is coated with a high-reflection film with a reflectivity greater than 99.5%, and the inner side wall of the edge-emitting laser unit facing the central axis is coated with an anti-reflection film with a transmittance greater than 99%. The thickness of the waveguide is in the range of 5 microns to 5 mm, and the material of the waveguide includes semiconductor material or low-loss dielectric material.

[0039] The reason for using an edge-emitting semiconductor laser as the annular lateral pump source 104 is that the edge-emitting semiconductor laser can achieve high-power laser output in a direction parallel to the substrate, making it an ideal pump source. In addition, the edge-emitting semiconductor laser is relatively small and can be integrated into the first mounting cavity 106, thereby facilitating the compactness of the layout of each module in the semiconductor laser integrated with the lateral pump source.

[0040] It should be noted that the material system of edge-emitting semiconductor lasers can be selected according to the required wavelength requirements of the pump light. For example, if the required pump light wavelength is in the range of 600nm~1200nm, the edge-emitting semiconductor laser can use a gallium arsenide material system; if the required pump light wavelength is in the range of 1300nm~1700nm, the edge-emitting semiconductor laser can choose an indium phosphide material system.

[0041] In some embodiments, the heat dissipation structure 103 is made of a highly thermally conductive transparent material. The gain chip 105 is bonded to the heat dissipation structure 103 to achieve efficient heat dissipation for the gain chip 105 .

[0042] In some embodiments, the highly thermally conductive transparent material includes diamond or sapphire.

[0043] In some embodiments, the surface of the heat dissipation structure 103 has an anti-reflection film, which helps to reduce the optical loss between the output coupling mirror 102 and the gain chip 105 .

[0044] The output coupling mirror 102 in the present invention is made of a transparent material. In some embodiments, the output coupling mirror 102 may specifically include quartz, sapphire, glass, infrared silicon, calcium fluoride or magnesium fluoride. The output coupling mirror 102 needs to be evaporated with a reflective film with high reflectivity in the output light band. The type and parameters of the output coupling mirror 102 can be adjusted according to the spot size, output power of the light beam and other performance requirements required by the semiconductor laser with an integrated lateral pump source. In some embodiments, the output coupling mirror 102 includes but is not limited to a plane mirror, a plano-concave mirror, a plano-convex mirror or an aspheric mirror.

[0045] In some embodiments, the second mounting cavity includes a first cavity 107 and a second cavity 108 arranged in sequence in a direction away from the first mounting cavity 106, and the heat dissipation structure 103 is located in the first cavity 107; in a direction perpendicular to the axial direction of the annular lateral pump source 104, the size of the first mounting cavity 106 is larger than the size of the first cavity 107, the maximum size of the first cavity 107 is smaller than the maximum size of the second cavity 108, and the size of the second cavity 108 gradually increases in a direction away from the first cavity 107. In this way, the size of the second cavity 108 in contact with the heat dissipation structure 103 gradually increases in a direction away from the heat dissipation structure 103, so that the heat dissipation area gradually increases, which is conducive to quickly extracting the heat from the heat dissipation window 103 and achieving good temperature control.

[0046] In some embodiments, the material of the housing 101 is high-purity copper. It is understandable that in other embodiments, the material of the housing 101 may also be other metal materials with high thermal conductivity.

[0047] In some embodiments, a metal layer composed of titanium, platinum, and gold is evaporated on the bottom inner wall of the first mounting cavity 106. This facilitates soldering of the gain chip 105 and the annular lateral pump source 104 to the bottom inner wall of the first mounting cavity 106, thereby improving heat dissipation from the bottom of the gain chip 105 and the annular lateral pump source 104.

[0048] In some embodiments, the outer shape of the shell 101 is cylindrical, the outer diameter of the cylinder can be in the range of 10 mm to 500 mm, the thickness of the bottom side wall of the first mounting cavity 106 is in the range of 3 mm to 50 mm, the thickness of the annular side wall of the first mounting cavity 106 can be in the range of 3 mm to 50 mm, the height of the first mounting cavity 106 is in the range of 1 mm to 100 mm, the maximum width of the second chamber 108 is 100 mm, the minimum width of the second chamber 108 is 5 mm, the first chamber 107 matches the size of the heat dissipation structure 103, and the light exit window matches the size of the output coupling mirror 102.

[0049] In a specific embodiment, the thickness of the heat dissipation structure 103 is in the range of 1 mm to 10 mm. The cross-sectional shape of the heat dissipation structure 103 in the direction perpendicular to its thickness is a square, and the side length of the square can be in the range of 1 mm to 40 mm. The material of the heat dissipation structure 103 can be diamond.

[0050] In a specific embodiment, the output coupling mirror 102 is a plano-concave mirror made of K9 glass. The thickness of the output coupling mirror 102 can be in the range of 1 mm to 10 mm, the diameter of the output coupling mirror 102 is in the range of 1 mm to 40 mm, the radius of curvature of the output coupling mirror 102 is in the range of 10 mm to 5000 mm, and the reflectivity of the reflective film on the surface of the output coupling mirror 102 to the output laser is in the range of 85% to 99.9%.

[0051] In some examples, the gain chip 105 based on the gallium arsenide material system includes: a substrate, which can be made of GaAs material; a DBR structure, which can be composed of alternately arranged GaAs layers and AlAs layers, or the DBR structure can be composed of alternately arranged Al x GaAs layers and Al y GaAs layers, where 0 < x < 1, 0 < y < 1. In the DBR structure, the thickness of a single-layer material is 1 / 4 of the output wavelength, and the DBR structure can be undoped; an active region, which can include multiple quantum well layers and barrier layers located on both sides of each quantum well layer. The material of the barrier layer can be AlGaAs, where the component of Al can be in the range of 0 to 0.2, the material of the quantum well layer can be InGaAs, where the In component can be in the range of 0 to 0.5, the thickness of the barrier layer can be in the range of 20 nm to 200 nm, the thickness of the quantum well layer can be in the range of 1 nm to 20 nm, and the corresponding emission wavelength band of the gain chip 105 can be in the range of 800 nm to 1300 nm; a window layer, the material of the window layer can be Al z GaAs material, where 0 < z < 1, and the thickness of the window layer can be in the range of 10 nm to 800 nm.

[0052] In some embodiments, the edge-emitting semiconductor laser is a semiconductor laser based on the gallium arsenide material system. The edge-emitting semiconductor laser includes: a substrate, the material of the substrate is N-type GaAs; an N-type DBR layer, the N-type DBR layer includes alternately arranged Al 0.25 Ga 0.75 As layers and Al 0.95 Ga 0.05 As layers. The thickness of a single-layer material in the N-type DBR layer can be 1 / 4 of the output wavelength, the dopant of the N-type DBR layer can be Si, and the doping concentration of Si can be 1E16 / cm3 ~8E18 / cm 3 The active area is a barrier layer / quantum well layer / barrier layer structure, and the material of the barrier layer can be Al 0.42 Ga 0.58 As, the material of the quantum well layer can be Al 0.08 Ga 0.92 As, the thickness of the barrier layer can be in the range of 20nm~200nm, the thickness of the quantum well layer can be in the range of 1nm~20nm, and the light-emitting band of the edge-emitting semiconductor laser can be 600nm~800nm; the P-type DBR layer, the P-type DBR layer includes Al 0.25 Ga 0.75 As and Al 0.95 Ga 0.05 As, the dopant of the P-type DBR layer can be C, and the doping concentration of C can be 1E18 / cm 3 ~1E20 / cm 3 within the range.

[0053] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved. This is not limited herein.

[0054] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A semiconductor laser with an integrated lateral pump source, characterized in that: The invention comprises: a housing, wherein the housing has a first installation cavity and a second installation cavity which are connected and arranged in sequence along a vertical direction, and the second installation cavity is connected to the outside through a light exit window; A gain chip, the gain chip being located in the first mounting cavity and facing the second mounting cavity, the gain chip comprising a substrate, a DBR layer, an active region, and a window layer arranged in sequence along a vertical direction, the number of quantum well layers in the active region being in a range of 5 to 50, each quantum well layer having barrier layers on both sides, the multiple quantum well layers being arranged in an alternating pattern, and the thickness of the barrier layers being in a range of 50 nm to 500 nm; an annular lateral pump source located in the first mounting cavity, the annular lateral pump source being annular and sleeved on the outer ring of the gain chip, emitting pump light toward the annular side of the gain chip and toward the side of the gain chip, the annular lateral pump source being an annular edge-emitting semiconductor laser, the annular edge-emitting semiconductor laser comprising an annular active region, a top waveguide, an upper electrode, and a lower electrode, the annular active region being annular, comprising an annular active region and an annular distributed Bragg reflector or an annular high-reflection mirror located on the outer ring of the annular active region, the top surface of the annular active region having a plurality of waveguides, each waveguide extending radially along the annular active region to guide the laser light to be output toward the central axis of the annular active region, the upper electrode being located on the top surface of the annular active region, the lower electrode being located at the bottom of the annular active region, and the lower electrode being annular or disk-shaped; a heat dissipation structure, the heat dissipation structure being located on a top surface of the gain chip facing the second mounting cavity, the heat dissipation structure extending from the first mounting cavity into the second mounting cavity, and a side surface of the heat dissipation structure located in the second mounting cavity contacting a side wall of the second mounting cavity; An output coupling mirror is located at the light exit window, and the output coupling mirror is located at a side of the heat dissipation structure away from the gain chip.

2. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The gain chip is a vertical external cavity surface emitting semiconductor laser chip.

3. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The material of the heat dissipation structure is a highly thermally conductive transparent material.

4. The semiconductor laser with integrated lateral pump source according to claim 3, characterized in that: The highly thermally conductive transparent material includes diamond or sapphire.

5. The semiconductor laser with integrated lateral pump source according to claim 1, 3 or 4, characterized in that: The surface of the heat dissipation structure is provided with an anti-reflection film.

6. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The second installation cavity includes a first cavity and a second cavity sequentially arranged in a direction away from the first installation cavity, and the heat dissipation structure is located in the first cavity; Along a direction perpendicular to the axial direction of the annular lateral pump source, a size of the first installation cavity is larger than a size of the first chamber, and a size of the first chamber is smaller than a size of the second chamber.

7. The semiconductor laser with integrated lateral pump source according to claim 1, characterized in that: The gain chip and the annular lateral pump source are both arranged on the bottom inner wall of the first installation cavity.

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