Multiplexer

Abstract

The invention provides a multiplexer which improves the heat dissipation performance of a filter. A duplexer (100) is provided with: a substrate (10); a reception filter (40) provided on the substrate (10) and including series resonators (S21-S23) and parallel resonators (P21, P22); a transmission filter (30), which is provided on the substrate (10) so as to be aligned with the reception filter (40), and which includes series resonators (S11-S14) and parallel resonators (P11-P14); a cover that is provided on the substrate (10) and that sandwiches a gap (18) between the cover and the substrate (10), the reception filter (40) and the transmission filter (30) being located in the gap (18); a columnar body (80b) provided in a region (42) of the receiving filter (40) between the substrate (10) and the cover within the void (18); and columnar bodies (80a) provided in a region (32) of the transmission filter (30) between the substrate (10) and the cover within the void (18), the number of the columnar bodies (80a) being larger than the number of the columnar bodies (80b).

Description

Technical Field

[0001] The present invention relates to a multiplexer. Background Art

[0002] There is known a structure in which a surface acoustic wave resonator and a frame surrounding the surface acoustic wave resonator are provided on a substrate, and a lid is provided on the frame so as to form a gap with the substrate, and the surface acoustic wave resonator is sealed in the gap by the lid (for example, Patent Document 1). In addition, there is known a structure in which columnar bodies are provided between the substrate and the lid in the gap in order to suppress the lid from flexing (for example, Patent Document 2).

[0003] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-143640

[0004] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2021-52359

[0005] In a multiplexer, a receiving filter including a plurality of first surface acoustic wave resonators and a transmitting filter including a plurality of second surface acoustic wave resonators are sometimes arranged on a substrate. Since a high-frequency signal with a large power is applied to the transmitting filter, the heat generation amount of the transmitting filter becomes large, and sometimes the second surface acoustic wave resonator is damaged. Summary of the Invention

[0006] An object of the present invention is to improve the heat dissipation of a filter.

[0007] The present invention is a multiplexer having: a substrate; a receiving filter provided on the substrate and including a surface acoustic wave resonator; a transmitting filter arranged on the substrate in parallel with the receiving filter and including a surface acoustic wave resonator; a lid provided on the substrate with a gap sandwiched between the lid and the substrate, the receiving filter and the transmitting filter being located in the gap; one or more first columnar bodies provided in a region of the receiving filter between the substrate and the lid in the gap; and a second columnar body provided in a region of the transmitting filter between the substrate and the lid in the gap, the number of the second columnar bodies being larger than the number of the first columnar bodies.

[0008] In the above structure, it can be configured that the total area of the second columnar bodies in a top view seen from above the substrate is larger than the total area of the first columnar bodies in the top view.

[0009] In the above structure, it can be configured that in a top view seen from above the substrate, the width of at least one of the second columnar bodies is larger than the width of the first columnar bodies.

[0010] In the above structure, it can be configured that: the multiplexer has a housing, and in a plan view seen from above the substrate, the housing is disposed around the receiving filter and the transmitting filter between the substrate and the lid, and a plurality of columnar bodies formed by the first columnar body and the second columnar body are symmetrically disposed with respect to at least one of a straight line passing through the center of gravity of the inner region closer to the inside than the housing and extending in the long side direction of the lid and a straight line extending in the short side direction.

[0011] In the above structure, it can be configured that: the multiplexer has a housing, and in a plan view seen from above the substrate, the housing is disposed around the receiving filter and the transmitting filter between the substrate and the lid, and a plurality of columnar bodies formed by the first columnar body and the second columnar body are arranged at equal intervals in at least one of the long side direction and the short side direction of the lid.

[0012] In the above structure, it can be configured that: the multiplexer has a plurality of terminals including a common terminal, a receiving terminal, and a transmitting terminal, the plurality of terminals are disposed on a second surface of the substrate opposite to a first surface on which the transmitting filter and the receiving filter are disposed, the receiving filter is connected to a path between the common terminal and the receiving terminal, the transmitting filter is connected to a path between the common terminal and the transmitting terminal, and in a plan view seen from above the substrate, the first columnar body and the second columnar body are disposed separately from the plurality of terminals.

[0013] In the above structure, it can be configured that: at least one of the second columnar bodies is disposed on a wiring connected to the surface acoustic wave resonator of the transmitting filter.

[0014] In the above structure, it can be configured that: at least one of the first columnar body and the second columnar body contacts the lid.

[0015] In the above structure, it can be configured that: the receiving filter and the transmitting filter face the lid with the gap therebetween.

[0016] The present invention relates to a multiplexer, which has: a substrate; a first filter disposed on the substrate and including an elastic wave resonator; a second filter disposed on the substrate and arranged adjacent to the first filter, also including an elastic wave resonator, and the second filter is applied with a larger power than the first filter; a cover disposed on the substrate, with a gap sandwiched between the cover and the substrate, and the first filter and the second filter are located in this gap; one or more first columns disposed in the region of the first filter between the substrate and the cover within the gap; and a second column disposed in the region of the second filter between the substrate and the cover within the gap, and the number of the second columns is larger than that of the first columns.

[0017] The present invention relates to a multiplexer, which has: a substrate; a receiving filter disposed on the substrate and including an elastic wave resonator; a transmitting filter disposed on the substrate and arranged adjacent to the receiving filter, also including an elastic wave resonator; and a plurality of terminals disposed on a second surface of the substrate opposite to a first surface where the receiving filter and the transmitting filter are disposed. The plurality of terminals include a common terminal, a receiving terminal, and a transmitting terminal. The common terminal is connected to the receiving filter and the transmitting filter. The receiving filter is connected in a path between the receiving terminal and the common terminal, and the transmitting filter is connected in a path between the transmitting terminal and the common terminal. In a top view observed from above the substrate, the total area of the terminals overlapping with the region of the transmitting filter among the plurality of terminals is larger than the total area of the terminals overlapping with the region of the receiving filter.

[0018] According to the present invention, the heat dissipation of the filter can be improved. Description of the Drawings

[0019] Figure 1 (a) and (b) are top views of the duplexer and the quadruplexer of Embodiment 1.

[0020] Figure 2 are cross-sectional views of the duplexer and the quadruplexer of Embodiment 1.

[0021] Figure 3 (a) is a top view of the series resonator and the parallel resonator in Embodiment 1, Figure 3 (b) is a cross-sectional view of another example of the series resonator and the parallel resonator.

[0022] Figure 4 is a top view showing the piezoelectric layer, the housing, the cover, and the columns in Embodiment 1.

[0023] Figure 5(a) to (d) are cross-sectional views showing the manufacturing method of the duplexer and the quadruplexer of Embodiment 1.

[0024] Figure 6 (a) to (d) are top views of Model A to Model D for which simulations were performed.

[0025] Figure 7 (a) to (d) are the simulation results of Model A to Model D.

[0026] Figure 8 (a) is a top view for explaining the allowable range of equal intervals of a plurality of columnar bodies in Embodiment 1, Figure 8 (b) and (c) are Figure 8 enlarged views of Region A and Region B of (a).

[0027] Figure 9 (a) and (b) are cross-sectional views for explaining the effect of disposing the columnar body separately from the terminal in a plan view in Embodiment 1.

[0028] Figure 10 (a) to (c) are top views of the duplexers of Embodiment 2 to Modified Example 2 of Embodiment 2.

[0029] Figure 11 (a) and (b) are top views of the duplexers of Embodiment 3 and Modified Example of Embodiment 3.

[0030] Figure 12 (a) and (b) are top views of the duplexer and the quadruplexer of Embodiment 4.

[0031] Figure 13 (a) to (d) are top views showing the arrangement example of terminals in Embodiment 4.

[0032] Reference Numeral Explanation

[0033] 10: Substrate; 12: Terminal; 14: Via wiring; 16: Wiring; 18: Gap; 20: Piezoelectric layer; 22: Through hole; 30, 30a: Transmit filter; 32: Area of transmit filter; 40, 40a: Receive filter; 42: Area of receive filter; 50: Surface acoustic wave resonator; 50a: Piezoelectric thin film resonator; 51: IDT; 52: Reflector; 53: Comb electrode; 54: Electrode finger; 55: Bus bar; 56: Lower electrode; 57: Upper electrode; 58: Gap; 59: Resonant area; 60: Housing; 62: Metal layer; 64: Bonding layer; 66: Ring portion; 68: Protrusion; 70: Cover; 72: Inner area; 74, 76: Straight line; 78: Center of gravity; 80, 80a, 80b: Columnar body; 82: Metal layer; 84: Bonding layer; 86: Columnar body; 87: Columnar body; 90: Mounting substrate; 92: Molding resin; 94: Crack; 100: Duplexer; 110: Quadruplexer; 200, 210, 220, 300, 310: Duplexer; 400: Duplexer; 410: Quadruplexer. Detailed implementation manners

[0034]

Example 1

[0035] Figure 1 Figures (a) and (b) are top views of the duplexer 100 and the quadruplexer 110 of Example 1. Figure 2 are cross-sectional views of the duplexer 100 and the quadruplexer 110 of Example 1. In Figure 1 Figures (a) and (b), the cover 70 is shown in perspective view, and for clarity of the figure, the housing 60 and the wiring 16 are hatched. In Figure 2 , for clarity of the figure, the cross-section is schematically shown, and the series resonator and the parallel resonator are shown as the surface acoustic wave resonator 50 (the same applies to the following figures).

[0036] As Figure 2 shown, a piezoelectric layer 20 is bonded to the upper surface of the substrate 10. The substrate 10 is, for example, a sapphire substrate, an alumina substrate, a spinel substrate, a quartz substrate, a crystal substrate, a silicon carbide substrate, or a silicon substrate, and has a thickness of 50 μm to 300 μm. The piezoelectric layer 20 is, for example, a single crystal lithium tantalate layer or a single crystal lithium niobate layer, and is, for example, a rotated Y-cut X-propagation lithium tantalate layer or a rotated Y-cut X-propagation lithium niobate layer. The piezoelectric layer 20 can be, for example, a 30° to 50° Y-cut X-propagation lithium tantalate layer. The thickness of the piezoelectric layer 20 is, for example, 0.5 μm to 30 μm, and is, for example, smaller than the wavelength of the elastic wave (e.g., surface acoustic wave) of the main mode excited by the surface acoustic wave resonator 50. An insulating layer such as silicon oxide, aluminum oxide, and / or aluminum nitride can be provided between the substrate 10 and the piezoelectric layer 20. In this way, the piezoelectric layer 20 is directly or indirectly bonded to the upper surface of the substrate 10.

[0037] As shown in Figure 1 (a) of FIG. 1, the duplexer 100 is provided with series resonators S11 to S14 and parallel resonators P11 to P14 included in the transmission filter 30, and series resonators S21 to S23 and parallel resonators P21 and P22 included in the reception filter 40 on the upper surface of the piezoelectric layer 20. The transmission filter 30 and the reception filter 40 are arranged and provided on the upper surface of the piezoelectric layer 20.

[0038] Figure 3 (a) of FIG. 1 is a top view of the series resonator and the parallel resonator in Embodiment 1. As shown in Figure 3 (a) of FIG. 1, the series resonator and the parallel resonator in Embodiment 1 are surface acoustic wave resonators 50. An IDT (Interdigital Transducer) 51 and a reflector 52 are provided on the upper surface of the piezoelectric layer 20. The IDT 51 has a pair of opposed comb-shaped electrodes 53. The comb-shaped electrode 53 has a plurality of electrode fingers 54 and bus bars 55 connected to the electrode fingers 54. The reflector 52 is provided on both sides of the IDT 51. The plurality of electrode fingers 54 excite surface acoustic waves in the piezoelectric layer 20. The pitch of the electrode fingers 54 of one of the pair of comb-shaped electrodes 53 is approximately the wavelength λ of the elastic wave. Twice the pitch D of the plurality of electrode fingers 54 is approximately the wavelength λ of the elastic wave. The IDT 51 and the reflector 52 are formed of a metal film such as aluminum, copper, or molybdenum, for example. A protective film or a temperature compensation film covering the IDT 51 and the reflector 52 may be provided on the upper surface of the piezoelectric layer 20. The comb-shaped electrode 53 may have dummy electrode fingers.

[0039] Figure 3 (b) of FIG. 1 is a cross-sectional view of another example of the series resonator and the parallel resonator in Embodiment 1. As shown in Figure 3 (b) of FIG. 1, the series resonator and the parallel resonator may be piezoelectric thin film resonators 50a. A piezoelectric layer 20 is provided on a substrate 10, and a lower electrode 56 and an upper electrode 57 are provided so as to sandwich the piezoelectric layer 20. A gap 58 is formed between the lower electrode 56 and the substrate 10. A region where the lower electrode 56 and the upper electrode 57 face each other with at least a part of the piezoelectric layer 20 interposed therebetween is a resonance region 59. In the resonance region 59, the lower electrode 56 and the upper electrode 57 excite elastic waves in the piezoelectric layer 20. The lower electrode 56 and the upper electrode 57 are metal films including a ruthenium film, for example. The piezoelectric layer 20 is, for example, an aluminum nitride layer, a zinc oxide layer, a single crystal lithium tantalate layer, or a single crystal lithium niobate layer. An acoustic reflection film that reflects elastic waves may be provided instead of the gap 58.

[0040] As shown in Figure 2As shown, a plurality of terminals 12 are provided on the lower surface of the substrate 10. The plurality of terminals 12 are land pads for electrically connecting the transmit filter 30 and the receive filter 40 to the outside, and include a common terminal Ant, a transmit terminal Tx, a receive terminal Rx, and a ground terminal GND.

[0041] As Figure 1 shown in (a) of

[0042] The series resonators S11 to S14 included in the transmit filter 30 are serially connected between the common terminal Ant and the transmit terminal Tx via the via wiring 14 passing through the substrate 10 and the wiring 16 provided on the substrate 10. One ends of the parallel resonators P11 to P14 are connected to the wiring 16 connecting between the series resonators S11 to S14, and the other ends are connected to the ground terminal GND via the wiring 16 and the via wiring 14. That is, the parallel resonators P11 to P14 are connected in parallel between the common terminal Ant and the transmit terminal Tx.

[0043] The transmit filter 30 connected between the common terminal Ant and the transmit terminal Tx allows the signal in the transmit band among the high-frequency signals input from the transmit terminal Tx to pass through the common terminal Ant as a transmit signal, and suppresses signals of other frequencies. The receive filter 40 connected between the common terminal Ant and the receive terminal Rx allows the signal in the receive band among the high-frequency signals input from the common terminal Ant to pass through the receive terminal Rx as a receive signal, and suppresses signals of other frequencies. The number of series resonators and parallel resonators, etc. can be appropriately set.

[0044] The terminals 12, the via wiring 14, and the wiring 16 are, for example, metal layers including titanium, copper, aluminum, platinum, nickel, and / or gold. The terminals 12, the via wiring 14, and the wiring 16 may be a single-layer metal layer or a laminated metal layer formed by laminating multiple layers.

[0045] As Figure 1 shown in (a) of Figure 2As shown, a piezoelectric layer 20 is not provided in the peripheral region of the substrate 10. On the substrate 10, a frame 60 is provided so as to surround the piezoelectric layer 20 and the transmission filter 30 and the reception filter 40 provided on the upper surface of the piezoelectric layer 20 in a plan view. The frame 60 is provided on the substrate 10 separately from the piezoelectric layer 20. The frame 60 has a metal layer 62 and a bonding layer 64. The metal layer 62 is in contact with the substrate 10. The bonding layer 64 is provided on the metal layer 62. The metal layer 62 is, for example, a metal layer containing copper, nickel, kovar alloy, gold, aluminum, and / or tungsten, etc. The metal layer 62 may be a single layer or may be a laminated multi-layer. The bonding layer 64 is, for example, a solder metal layer such as gold-tin, silver-tin, tin, or tin-silver-copper, etc.

[0046] On the frame 60, a cover 70 is provided so as to form a gap 18 between the cover 70 and the substrate 10. The cover 70 is bonded to the bonding layer 64 of the frame 60. The transmission filter 30 and the reception filter 40 face the cover 70 with the gap 18 therebetween. The transmission filter 30 and the reception filter 40 are sealed in the gap 18 by the frame 60 and the cover 70. The cover 70, for example, contains a metal layer such as kovar alloy, alloy 42, a ferroalloy such as stainless steel, an aluminum alloy such as duralumin, nickel, copper, or cupronickel. These metal layers of the cover 70 are exposed in the gap 18.

[0047] The cover 70 may also contain an insulating layer such as sapphire, alumina, spinel, quartz, crystal, silicon carbide, silicon, glass, DLC (Diamond-Like Carbon), FR4 (Flame Retardant Type4), LTCC (Low Temperature Co-Fired Ceramics), HTCC (High Temperature Co-Fired Ceramics), or FRP (Fiber Reinforced Plastics). These insulating layers are provided on the side opposite to the gap 18 with the metal layer therebetween.

[0048] The piezoelectric layer 20 has a plurality of through holes 22 that penetrate the piezoelectric layer 20 from the upper surface to the lower surface. The through holes 22 are, for example, formed in an open shape in a part of the piezoelectric layer 20. Among the plurality of through holes 22, columnar bodies 80 made of, for example, metal are respectively provided between the substrate 10 and the lid 70. That is, the columnar bodies 80 are provided between the substrate 10 and the lid 70 within the gap 18. The columnar bodies 80 are provided separately from the piezoelectric layer 20. The columnar bodies 80 have a metal layer 82 and a bonding layer 84. The metal layer 82 is in contact with the substrate 10 or the wiring 16. The bonding layer 84 is provided on the metal layer 82. The metal layer 82 is, for example, a metal layer containing copper, nickel, kovar alloy, gold, aluminum, and / or tungsten, etc., and as an example, is formed of the same material as the metal layer 62. The metal layer 82 can be a single layer or can be a case where multiple layers are stacked. The bonding layer 84 is, for example, a solder metal layer such as gold-tin, silver-tin, tin, or tin-silver-copper, and as an example, is formed of the same material as the bonding layer 64. The lid 70 is bonded to the bonding layer 84 of the columnar bodies 80.

[0049] The plurality of columnar bodies 80 include columnar bodies 80a provided in the region 32 of the transmission filter 30 and columnar bodies 80b provided in the region 42 of the reception filter 40. The region 32 of the transmission filter 30 is a region where the constituent components (series resonators, parallel resonators, and wirings connected to them) of the transmission filter 30 are provided when viewed from above. The region 42 of the reception filter 40 is a region where the constituent components (series resonators, parallel resonators, and wirings connected to them) of the reception filter 40 are provided when viewed from above. The boundary between the region 32 of the transmission filter 30 and the region 42 of the reception filter 40 is delimited by a line located in the middle of the constituent components (series resonators, parallel resonators, and wirings connected to them) of the transmission filter 30 and the reception filter 40 respectively. The common wiring 16 of the transmission filter 30 and the reception filter 40 is delimited by a line located in the middle of them. The region 32 of the transmission filter 30 is, for example, larger than the region 42 of the reception filter 40.

[0050] The number of the columns 80a provided in the region 32 of the transmit filter 30 is larger than the number of the columns 80b provided in the region 42 of the receive filter 40. The plurality of columns 80 are formed, for example, in the same shape and size. Therefore, the total area of the plurality of columns 80a when viewed from above is larger than the total area of the plurality of columns 80b when viewed from above. In other words, the total area of the surfaces on the cover 70 side of the plurality of columns 80a is larger than the total area of the surfaces on the cover 70 side of the plurality of columns 80b. In addition, the case where a plurality of columns 80b are provided in the region 42 of the receive filter 40 is shown as an example, but it is sufficient that one or more columns 80b are provided. At least one of the columns 80a among the plurality of columns 80a is sandwiched between any one of the series resonators S11 to S14 and the parallel resonators P11 to P14. At least one of the columns 80a among the plurality of columns 80a is provided in a region surrounded by the series resonators S11 to S14, the parallel resonators P11 to P14, and the wiring 16. In addition, when the column 80 is provided across the region 32 of the transmit filter 30 and the region 42 of the receive filter 40, it is assumed to be the region where the column 80 is larger among the region 32 and the region 42.

[0051] Figure 4 is a top view showing the piezoelectric layer 20, the frame 60, the cover 70, and the column 80 in the first embodiment. As Figure 4 shown, the frame 60 surrounds the periphery of the piezoelectric layer 20 in a rectangular frame shape. Therefore, the surface on the substrate 10 side of the inner region 72 (shaded portion) of the cover 70, which is closer to the inside than the frame 60, is formed in a rectangular shape. The rectangular shape also includes the case where the vertices have rounded corners and / or the case where each side is a curve. The inner region 72 of the cover 70 is exposed in the gap 18.

[0052] The plurality of columns 80 are arranged symmetrically with respect to a straight line 74 that passes through the center of gravity 78 of the inner region 72 of the cover 70 and extends in the long side direction of the cover 70 and a straight line 76 that extends in the short side direction. In addition, the plurality of columns 80 are arranged at equal intervals in the long side direction of the cover 70.

[0053] The width of the frame 60 is, for example, 20 μm to 30 μm, and the height is, for example, 10 μm to 30 μm. The length and width of the column 80 are, for example, 20 μm to 30 μm, and the height is, for example, 10 μm to 30 μm, and is, for example, the same as the height of the frame 60. The length of the cover 70 is, for example, 1.8 mm in the long side direction and 1.4 mm in the short side direction.

[0054] In addition, so far, the duplexer 100 has been mainly described, but for Figure 1The diplexer 110 shown in (b) thereof has the same structure except for the transmit filter 30a and the receive filter 40a. As Figure 1 shown in (b) thereof, in the diplexer 110, the transmit filter 30a includes series resonators S31 to S33 connected between the common terminal Ant and the first transmit terminal Tx1, parallel resonators P31, P32, and series resonators S41 to S43 and parallel resonators P41, P42 connected between the common terminal Ant and the second transmit terminal Tx2. The receive filter 40a includes series resonators S51, S52 and parallel resonators P51, P52 connected between the common terminal Ant and the first receive terminal Rx1, and series resonators S61, S62 and parallel resonators P61, P62 connected between the common terminal Ant and the second receive terminal Rx2.

[0055]

Manufacturing Method

[0056] Figure 5 (a) to (d) thereof are cross-sectional views showing the manufacturing method of the duplexer 100 and the diplexer 110 of Embodiment 1. As Figure 5 shown in (a) thereof, vias are formed by irradiating the upper surface of the substrate 10 with a laser, for example, and a metal layer such as copper is formed in the vias using a plating method, for example. Then, the metal layer is planarized using the CMP (Chemical Mechanical Polishing) method to expose the upper surface of the substrate 10, thereby forming via wirings 14 on the substrate 10. Next, a piezoelectric substrate is bonded to the upper surface of the substrate 10 at room temperature using a surface activation method, for example. The substrate 10 and the piezoelectric substrate can be directly bonded via an amorphous layer of several nm or the like, or can be indirectly bonded via an insulating layer. Then, the piezoelectric substrate is polished using the CMP method, for example, to form a piezoelectric layer 20 that is directly or indirectly bonded to the upper surface of the substrate 10.

[0057] As Figure 5As shown in (b) of , for example, an etching method is used to remove a part of the piezoelectric layer 20. Thereby, the piezoelectric layer 20 in the peripheral region of the substrate 10 is removed, and a through hole 22 is formed in the piezoelectric layer 20. Next, in the duplexer 100, series resonators S11 to S14 and parallel resonators P11 to P14 of the transmit filter 30 and series resonators S21 to S23 and parallel resonators P21, P22 of the receive filter 40 are formed on the upper surface of the piezoelectric layer 20. In the quadruplexer 110, series resonators S31 to S33, S41 to S43 and parallel resonators P31, P32, P41, P42 of the transmit filter 30a and series resonators S51, S52, S61, S62 and parallel resonators P51, P52, P61, P62 of the receive filter 40a are formed on the upper surface of the piezoelectric layer 20. Here, these series resonators and parallel resonators are illustrated as surface acoustic wave resonators 50. In addition, wirings 16 connected to these series resonators and parallel resonators are formed.

[0058] As Figure 5 As shown in (c) of , a frame 60 is formed on the upper surface of the substrate 10 so as to surround the piezoelectric layer 20. While forming the frame 60, a columnar body 80 is formed on the substrate 10 in the through hole 22 of the piezoelectric layer 20. Next, the cover 70 is joined to the frame 60 and the columnar body 80. Thereby, the transmit filter 30 and the receive filter 40 are sealed in the gap 18 by the frame 60 and the cover 70.

[0059] As Figure 5 As shown in (d) of , for example, the lower surface of the substrate 10 is polished using the CMP method. Thereby, the via wiring 14 is exposed from the lower surface of the substrate 10. Terminals 12 connected to the via wiring 14 are formed on the lower surface of the substrate 10. Thereby, the duplexer 100 and the quadruplexer 110 of Embodiment 1 are formed.

[0060]

Simulation

[0061] The amount of deflection when pressure is applied to the upper surface of the cover 70 from the outside was simulated. Figure 6 (a) to (d) of are top views of models A to D for which the simulation was performed. As Figure 6 As shown in (a) to (d) of , the simulation was performed according to a simple model that only considers the substrate 10, the frame 60, the cover 70, and the columnar body 80. In Figure 6In (a) to (d), the cover 70 provided on the housing 60 is indicated by hatched lines. Model A corresponds to a comparative example where no columnar body is provided. Models B to D correspond to Example 1 where a plurality of columnar bodies 80 that contact the substrate 10 and the cover 70 are provided between the substrate 10 and the cover 70. In Model B, the plurality of columnar bodies 80 are arranged in a lattice pattern. In Model C, the plurality of columnar bodies 80 are arranged in a cross shape. In Model D, the plurality of columnar bodies 80 are arranged in a manner that a part is missing with respect to the lattice pattern.

[0062] The simulation conditions are as follows.

[0063] Common conditions for Models A to D:

[0064] Substrate 10: A sapphire substrate with a thickness of 75 μm

[0065] Cover 70: A kovar alloy layer with a thickness of 30 μm

[0066] Pressure applied to the upper surface of the cover 70: 6 MPa (assuming the pressure in resin molding)

[0067] Length L1 of the substrate 10: 1.8 mm

[0068] Length L2 of the substrate 10: 1.4 mm

[0069] Width W of the housing 60: 0.019 mm

[0070] Spacing D between the housing 60 and the end of the substrate 10: 0.0115 mm

[0071] Conditions for Model A:

[0072] Metal layer 62 of the housing 60: A copper (Cu) layer with a thickness of 300 μm and a nickel (Ni) layer with a thickness of 2.5 μm

[0073] Bonding layer 64 of the housing 60: A gold-tin (AuSn) layer with a thickness of 5 μm

[0074] Common conditions for Models B to D:

[0075] Metal layer 62 of the housing 60: A copper (Cu) layer with a thickness of 21 μm and a nickel (Ni) layer with a thickness of 2.5 μm. Bonding layer 64 of the housing 60: A gold-tin (AuSn) layer with a thickness of 5 μm

[0076] Metal layer 82 of the columnar body 80: A copper (Cu) layer with a thickness of 21 μm and a nickel (Ni) layer with a thickness of 2.5 μm

[0077] Bonding layer 84 of the columnar body 80: A gold-tin (AuSn) layer with a thickness of 5 μm

[0078] Widths W11, W12 of the column 80: 46 μm

[0079] Conditions of Model B

[0080] Spacing D11 between columns 80: 0.295 mm

[0081] Spacing D12 between columns 80: 0.383 mm

[0082] Spacing D13 between column 80 and the frame 60: 0.306 mm

[0083] Spacing D14 between column 80 and the frame 60: 0.418 mm

[0084] Conditions of Model C:

[0085] Spacing D21 between columns 80: 0.295 mm

[0086] Spacing D22 between columns 80: 0.383 mm

[0087] Spacing D23 between column 80 and the frame 60: 0.306 mm

[0088] Spacing D24 between column 80 and the frame 60: 0.418 mm

[0089] Conditions of Model D:

[0090] Remove the columns 80 in the illustrated part from the conditions of Model B

[0091] Table 1 shows the Young's modulus, coefficient of linear expansion, and Poisson's ratio of each material used for simulation.

[0092]

Table 1

[0093]

[0094] Figure 7 (a) to (d) thereof are the simulation results of Model A to Model D. Figure 7 (a) to (d) thereof are contour maps showing the displacement amount of the lower surface of the cover 70 after applying pressure relative to the reference position, which is the lower surface of the cover 70 before applying pressure, as the deflection amount of the cover 70.

[0095] As Figure 7 shown in (a) of, in Model A without columns, the deflection of the cover 70 is large, and the maximum deflection amount is 270 μm at the central part of the cover 70.

[0096] As Figure 7As shown in (b) to (d), in Models B to D provided with the columnar body 80, compared with Model A, the flexure of the cover 70 is significantly suppressed. The maximum flexure amount of the cover 70 in Model B is 3.9 μm. The maximum flexure amount of the cover 70 in Model C is 13.1 μm. The maximum flexure amount of the cover 70 in Model D is 21.6 μm.

[0097] According to Embodiment 1, as Figure 1 shown in (a), the transmission filter 30 and the reception filter 40 are arranged and provided on the substrate 10. The transmission filter 30 includes series resonators S11 to S14 and parallel resonators P11 to P14, and the reception filter 40 includes series resonators S21 to S23 and parallel resonators P21, P22. Alternatively, as Figure 1 shown in (b), the transmission filter 30a and the reception filter 40a are arranged and provided on the substrate 10. The transmission filter 30a includes series resonators S31 to S33, series resonators S41 to S43, and parallel resonators P31, P32, P41, P42, and the reception filter 40a includes series resonators S51, S52, S53, S54 and parallel resonators P51, P52, P61, P62. A cover 70 is provided on the frame 60 disposed around the transmission filters 30, 30a and the reception filters 40, 40a in a plan view. A gap 18 is interposed between the cover 70 and the substrate 10, and the transmission filters 30, 30a and the reception filters 40, 40a are located in the gap 18. In the gap 18, between the substrate 10 and the cover 70, a columnar body 80a (second columnar body) is provided in the region 32 of the transmission filters 30, 30a, and a columnar body 80b (first columnar body) is provided in the region 42 of the reception filters 40, 40a. By providing the columnar bodies 80a, 80b between the substrate 10 and the cover 70 in the gap 18, even when pressure is applied to the cover 70 from the outside as in the above simulation results, the flexure generated by the cover 70 can be reduced. Thereby, it is possible to suppress the cover 70 from contacting or approaching the transmission filters 30, 30a and the reception filters 40, 40a, and thus suppress the deterioration of characteristics.

[0098] In addition, according to Embodiment 1, the number of the columnar bodies 80a provided in the region 32 of the transmission filters 30, 30a is larger than the number of the columnar bodies 80b provided in the region 42 of the reception filters 40, 40a. Since the transmission filters 30, 30a are filters for high-frequency signals to which a large power is applied, the amount of heat generation is large. The heat generated by the resonators of the transmission filters 30, 30a is as Figure 2radiate toward the columnar body 80 like the arrow. Whether the columnar body 80 is provided in contact with the wiring 16 or the columnar body 80 is provided in contact with the substrate 10, the heat generated by the resonator radiates toward the columnar body 80, but when the columnar body 80 is provided in contact with the wiring 16, it is easier to radiate toward the columnar body 80. Therefore, it is preferable that at least one of the plurality of columnar bodies 80a is provided on the wiring 16. By increasing the number of columnar bodies 80a in the region 32 of the transmission filters 30, 30a, more heat generated by the transmission filters 30, 30a radiates toward the columnar body 80a, so the heat dissipation performance is improved. Therefore, damage to the resonators of the transmission filters 30, 30a can be suppressed. The number of columnar bodies 80a in the region 32 of the transmission filters 30, 30a is preferably 1.5 times or more, more preferably 2 times or more, and further preferably 3 times or more the number of columnar bodies 80b in the region 42 of the reception filters 40, 40a.

[0099] In addition, in Embodiment 1, the total area of the plurality of columnar bodies 80a in the region 32 of the transmission filters 30, 30a in the top view observed from above the substrate 10 is larger than the total area of the plurality of columnar bodies 80b in the region 42 of the reception filters 40, 40a in the top view observed from above the substrate 10. Thereby, the heat dissipation performance achieved via the columnar body 80a is improved, so damage to the resonators of the transmission filters 30, 30a can be suppressed. The total area of the plurality of columnar bodies 80a in the region 32 of the transmission filters 30, 30a in the top view is preferably 1.5 times or more, more preferably 2 times or more, and further preferably 3 times or more the total area of the plurality of columnar bodies 80b in the region 42 of the reception filters 40, 40a in the top view.

[0100] In addition, in Embodiment 1, as Figure 4 shown, the plurality of columnar bodies 80 are arranged symmetrically with respect to a straight line 74 extending along the long side direction of the cover 70 and a straight line 76 extending along the short side direction that pass through the center of gravity 78 of the inner region 72 of the cover 70. Thereby, as in Model B and Model C in the above simulation, the flexure of the cover 70 can be reduced. In addition, it may be the case where the plurality of columnar bodies 80 are arranged symmetrically with respect to any one of the straight line 74 and the straight line 76.

[0101] In addition, in Embodiment 1, as Figure 4 shown, the plurality of columnar bodies 80 are arranged at equal intervals in the long side direction of the cover 70. Thereby, as in Model B and Model C in the above simulation, the flexure of the cover 70 can be reduced. In addition, the plurality of columnar bodies 80 may be arranged at equal intervals in the short side direction of the cover 70, or may be arranged at equal intervals in both the long side direction and the short side direction. The equal intervals here allow the following range.Figure 8 FIG. (a) is a top view showing the allowable range of equal intervals of the plurality of columns 80 in Example 1. Figure 8 FIGS. (b) and (c) are Figure 8 enlarged views of regions A and B in FIG. (a). As Figure 8 shown in FIGS. (a) to (c), when a part of the plurality of columns 80 converges within the width W of the column 80 based on the position of the adjacent column 80, the plurality of columns 80 are considered to be arranged at equal intervals.

[0102] In addition, in Example 1, as Figure 1 shown in FIGS. (a) and (b), in a top view observed from above the substrate 10, the column 80a and the column 80b (i.e., the column 80) are provided separately from the plurality of terminals 12. Figure 9 FIGS. (a) and (b) are cross-sectional views showing the effect of the column 80 being provided separately from the terminal 12 in a plan view in Example 1. In Figure 9 FIG. (a), a case where no column is provided is illustrated, and in Figure 9 FIG. (b), a case where the column 80 is provided separately from the terminal 12 in a plan view is illustrated. As Figure 9 shown in FIG. (a), when the substrate 10 is mounted on the mounting substrate 90 and then sealed with the molding resin 92, a force as indicated by the arrow is applied to the substrate 10 and the lid 70, etc. Since a force is also applied to the surface of the substrate 10 where the terminal 12 is provided, if the column 80 is not provided, the substrate 10 is deformed into a convex shape. As a result, cracks 94, etc. may be generated on the substrate 10. On the other hand, as Figure 9 shown in FIG. (b), the column 80 is provided separately from the terminal 12 in a plan view, so that even when a force is applied to the surface of the substrate 10 where the terminal 12 is provided, the deformation of the substrate 10 into a convex shape can be suppressed by the column 80. Therefore, the generation of cracks, etc. on the substrate 10 can be suppressed.

[0103] When the terminals 12 are provided on the opposing sides of the substrate 10, from the viewpoint of suppressing cracks in the substrate 10, the interval X between the column 80 and the terminal 12 is preferably 1 / 20 times or more, more preferably 1 / 15 times or more, and still more preferably 1 / 10 times or more of the interval L between the opposing sides of the substrate 10.

[0104] In addition, in Example 1, as Figure 2 shown, the plurality of columns 80a and the plurality of columns 80b (i.e., the column 80) are in contact with the lid 70. Thereby, the flexure generated in the lid 70 can be reduced. In addition, it is not limited to the case where all of the plurality of columns 80a and all of the plurality of columns 80b are in contact with the lid 70, and it may also be the case where at least one of the plurality of columns 80a and the plurality of columns 80b is in contact with the lid 70.

[0105]

Embodiment 2

[0106] Figure 10 Fig. (a) is a top view of the duplexer 200 of Embodiment 2. Figure 10 Fig. (b) is a top view of the duplexer 210 of Variant Example 1 of Embodiment 2. Figure 10 Fig. (c) is a top view of the duplexer 220 of Variant Example 2 of Embodiment 2. In Figure 10 Figs. (a) to (c), for clarity of the drawings, only the substrate 10, the region 32 of the transmit filter 30, the region 42 of the receive filter 40, the housing 60, and the columnar bodies 80 are illustrated.

[0107] As Figure 10 shown in Fig. (a), in the duplexer 200 of Embodiment 2, the plurality of columnar bodies 80 are arranged in a staggered manner and are symmetrically arranged with respect to a straight line 74 passing through the centroid 78 of the inner region 72 (shaded portion) of the cover 70 and extending along the long side direction of the cover 70 and a straight line 76 extending along the short side direction. At least one of the plurality of columnar bodies 80a provided in the region 32 of the transmit filter 30 is wider in plan view than the plurality of columnar bodies 80b provided in the region 42 of the receive filter 40. Since other structures are the same as those in Embodiment 1, the description thereof is omitted.

[0108] As Figure 10 shown in Fig. (b), in the duplexer 210 of Variant Example 1 of Embodiment 2, in addition to the plurality of columnar bodies 80 arranged in a staggered manner, a columnar body 86 is included in the region 32 of the transmit filter 30 and is arranged deviating from the staggered pattern. The columnar body 86 has the same shape as the columnar body 80 in plan view. The width of the columnar body 86 in plan view may be greater than or equal to the width of the columnar body 80b in the region 42 of the receive filter 40.

[0109] As Figure 10 shown in Fig. (c), in the duplexer 220 of Variant Example 2 of Embodiment 2, a columnar body 87 having a shape and size different from that of the columnar body 80 in plan view is provided near the housing 60. The width of the columnar body 87 in plan view may be greater than or less than the width of the columnar body 80 in plan view.

[0110] According to Embodiment 2 and its modified examples, at least one of the plurality of columnar bodies 80a, 86, and 87 provided in the region 32 of the transmission filter 30 has a larger width in a plan view than the plurality of columnar bodies 80b provided in the region 42 of the reception filter 40. Thereby, the heat dissipation performance achieved via the columnar bodies 80a, 86, and 87 can be improved. The area of the larger columnar bodies 80a, 86, and 87 in a plan view is preferably 1.5 times or more, more preferably 2.0 times or more, and further preferably 3.0 times or more of the area of the columnar bodies 80b in a plan view. Alternatively, it may be the case where the smallest width of the plurality of columnar bodies 80a, 86, and 87 in a plan view is greater than the largest width of the plurality of columnar bodies 80b in a plan view.

[0111] In addition, although the case of a duplexer is illustrated in Embodiment 2 and its modified examples, the present invention can also be applied to Figure 1 a quadruplexer as shown in (b) of

[0112]

Embodiment 3

[0113] Figure 11 Fig. (a) is a plan view of the duplexer 300 of Embodiment 3, Figure 11 Fig. (b) is a plan view of the duplexer 310 which is a modified example of Embodiment 3. In Figure 11 both Fig. (a) and Fig. (b), for the sake of clarity of the drawing, only the substrate 10, the region 32 of the transmission filter 30, the region 42 of the reception filter 40, the frame 60, and the columnar bodies 80 are illustrated. As Figure 11 shown in Fig. (a), in the duplexer 300 of Embodiment 3, the plurality of columnar bodies 80 are arranged in a manner that a part is missing with respect to a staggered shape. The frame 60 has an annular portion 66 and a protruding portion 68 protruding inward from the annular portion 66. For example, the protruding portion 68 protrudes from the annular portion 66 toward a position corresponding to the part missing with respect to the staggered shape of the columnar bodies 80. The total area of the plurality of columnar bodies 80a provided in the region 32 of the transmission filter 30 and the protruding portion 68 in a plan view is larger than the total area of the plurality of columnar bodies 80b provided in the region 42 of the reception filter 40 and the protruding portion 68 in a plan view. Since other structures are the same as those in Embodiment 1, the description thereof is omitted.

[0114] As Figure 11 shown in Fig. (b), in the duplexer 310 which is a modified example of Embodiment 3, the plurality of columnar bodies 80 are arranged in a cross shape. A plurality of protruding portions 68 of the frame 60 are provided on each side of the substrate 10 in a manner symmetric with respect to the straight lines 74 and 76.

[0115] Even when the housing 60 has the protruding portion 68 protruding inward as in Embodiment 3 and its modified example, the flexure of the lid 70 can be reduced. In the case where a plurality of protruding portions 68 are provided on each side of the substrate 10 as in the modified example of Embodiment 3, the deformation region of the lid 70 becomes smaller, and thus the flexure of the lid 70 can also be reduced from this point of view.

[0116] In addition, although the case of a duplexer is illustrated in Embodiment 3 and its modified example, the present invention can also be applied to Figure 1 a quadruplexer as shown in (b) of

[0117]

Embodiment 4

[0118] Figure 12 FIGS. (a) and (b) are top views of the duplexer 400 and the quadruplexer 410 of Embodiment 4. In Figure 12 FIGS. (a) and (b), the lid 70 is shown in perspective view, and in order to clarify the drawing, the housing 60 and the wiring 16 are hatched. As Figure 12 shown in FIGS. (a) and (b), in Embodiment 4, the common terminal Ant is provided closer to the region 42 side of the receiving filters 40, 40a. In addition, terminals 12 are also provided at the middle portions of the opposed sides in the short side direction of the substrate 10. The number of terminals 12 provided so as to overlap the region 32 of the transmitting filters 30, 30a when viewed from above is larger than the number of terminals 12 provided so as to overlap the region 42 of the receiving filters 40, 40a. Therefore, the total area of the terminals 12 provided so as to overlap the region 32 of the transmitting filters 30, 30a when viewed from above is larger than the total area of the terminals 12 provided so as to overlap the region 42 of the receiving filters 40, 40a. In addition, the terminal NC is an unconnected terminal. Since other configurations are the same as those in Embodiment 1, the description thereof is omitted.

[0119] Figure 13 FIGS. (a) to (d) are top views showing the arrangement examples of the terminals 12 in Embodiment 4. In order to clarify the drawing, in Figure 13 FIGS. (a) to (d), only the substrate 10, the terminals 12, the region 32 of the transmitting filters 30, 30a, the region 42 of the receiving filters 40, 40a, and the housing 60 are shown. As in Figure 13 FIG. (a) shown, the terminals 12 may be arranged at equal intervals in the long side direction of the substrate 10 and also at equal intervals in the short side direction. This is the same as Figure 12 FIGS. (a) and (b). It may also be the case where the terminals 12 are provided only at the four corners and the center of each side of the substrate 10 as shown in Figure 13 FIG. (b). It may also be the case where larger terminals 12 than the other terminals 12 are provided in the central region of the substrate 10 as shown in Figure 13 FIGS. (c) and (d).

[0120] According to Embodiment 4, the total area of the terminals 12 provided so as to overlap with the regions 32 of the transmission filters 30 and 30a in a plan view is larger than the total area of the terminals 12 provided so as to overlap with the regions 42 of the reception filters 40 and 40a. As a result, the heat dissipation achieved via the terminals 12 in the transmission filters 30 and 30a is improved, and thus damage to the resonators of the transmission filters 30 and 30a can be suppressed. The total area of the terminals 12 provided in the regions 32 of the transmission filters 30 and 30a in a plan view is preferably 1.5 times or more, more preferably 2 times or more, and further preferably 3 times or more the total area of the terminals 12 provided in the regions 42 of the reception filters 40 and 40a in a plan view. Further, in a case where the terminals 12 are provided so as to straddle the region 32 of the transmission filter 30 and the region 42 of the reception filter 40, it is assumed that the region where the terminals 12 provided in the regions 32 and 42 are larger is used.

[0121] Further, in Embodiments 1 to 4, the multiplexer is not limited to a duplexer or a quadruplexer, and may be a triplexer or the like.

[0122] Further, in Embodiments 1 to 4, the planar shape of the columnar body 80 is not limited to a rectangular shape, and various shapes can be adopted. For example, it may be a circular shape, an elliptical shape, a rhombus shape, a cross shape, an annular shape, or the like. The side shape of the columnar body 80 is not limited to a rectangular shape, and various shapes can be adopted. For example, it may be a trapezoidal shape, an inverted trapezoidal shape, a shape having a depression or a bulge in the central portion, or the like.

[0123] As described above, the embodiments of the present invention have been described in detail, but the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims.

Claims

1. A multiplexer, comprising: substrate; a receiving filter, which is disposed on the substrate and includes an elastic wave resonator; a transmitting filter arranged on the substrate and arranged in parallel with the receiving filter, and comprising an elastic wave resonator; a cover disposed on the substrate, with a gap sandwiched between the cover and the substrate, wherein the receiving filter and the transmitting filter are located in the gap; one or more first columnar bodies provided in a region of the reception filter between the substrate and the cover within the gap; as well as The second columnar bodies are provided in the region of the transmission filter between the substrate and the cover in the gap, and the number of the second columnar bodies is greater than the number of the first columnar bodies.

2. The multiplexer according to claim 1, wherein: A total area of ​​the second columnar bodies in a plan view viewed from above the substrate is larger than a total area of ​​the first columnar bodies in the plan view.

3. The multiplexer according to claim 1 or 2, wherein: In a plan view viewed from above the substrate, at least one of the second columnar bodies has a width greater than a width of the first columnar body.

4. The multiplexer according to claim 1 or 2, wherein: The multiplexer includes a frame body provided around the reception filter and the transmission filter between the substrate and the cover in a plan view viewed from above the substrate. The plurality of columnar bodies composed of the first columnar body and the second columnar body are arranged line-symmetrically with respect to at least one of a straight line extending along the longitudinal direction of the cover and a straight line extending along the lateral direction and a straight line passing through the center of gravity of the inner region of the cover inside the frame.

5. The multiplexer according to claim 1 or 2, wherein: The multiplexer includes a frame body provided around the reception filter and the transmission filter between the substrate and the cover in a plan view viewed from above the substrate. A plurality of columnar bodies composed of the first columnar body and the second columnar body are arranged at equal intervals in at least one of the longitudinal direction and the lateral direction of the cover.

6. The multiplexer according to claim 1 or 2, wherein: The multiplexer has a plurality of terminals including a common terminal, a receiving terminal, and a transmitting terminal, wherein the plurality of terminals are provided on a second surface of the substrate opposite to a first surface on which the transmitting filter and the receiving filter are provided. The receiving filter is connected to a path between the common terminal and the receiving terminal. The transmission filter is connected to a path between the common terminal and the transmission terminal. In a plan view viewed from above the substrate, the first columnar body and the second columnar body are provided separately from the plurality of terminals.

7. The multiplexer according to claim 1 or 2, wherein: At least one of the second columnar bodies is provided on a wiring connected to the elastic wave resonator of the transmission filter.

8. The multiplexer according to claim 1 or 2, wherein: At least one of the first columnar body and the second columnar body is in contact with the cover.

9. The multiplexer according to claim 1 or 2, wherein: The reception filter and the transmission filter face the cover via the gap.

10. A multiplexer comprising: substrate; a first filter disposed on the substrate and comprising an elastic wave resonator; a second filter arranged on the substrate in parallel with the first filter and including an elastic wave resonator, the second filter being applied with a larger electric power than the first filter; a cover disposed on the substrate, with a gap sandwiched between the cover and the substrate, wherein the first filter and the second filter are located in the gap; one or more first columnar bodies provided in a region of the first filter between the substrate and the cover within the gap; and The second columnar bodies are provided in the region of the second filter between the substrate and the cover in the gap, and the number of the second columnar bodies is greater than the number of the first columnar bodies.

11. A multiplexer comprising: substrate; a receiving filter, which is disposed on the substrate and includes an elastic wave resonator; a transmission filter arranged on the substrate in parallel with the reception filter, and comprising an elastic wave resonator; and A plurality of terminals are arranged on the second surface of the substrate opposite to the first surface on which the receiving filter and the transmitting filter are arranged, the plurality of terminals include a common terminal, a receiving terminal and a transmitting terminal, the common terminal is connected to the receiving filter and the transmitting filter, the receiving filter is connected on a path between the receiving terminal and the common terminal, and the transmitting filter is connected on a path between the transmitting terminal and the common terminal, and in a top view observed from above the substrate, the total area of ​​the terminals overlapping with the area of ​​the transmitting filter among the plurality of terminals is larger than the total area of ​​the terminals overlapping with the area of ​​the receiving filter.

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