Solar cell and photovoltaic module

Abstract

The invention discloses a solar cell and a photovoltaic module, relates to the technical field of photovoltaics, and is used for solving the problem that a conductive doped region of the solar cell is to be optimized. A solar cell includes: a substrate; the strip-shaped doping parts are arranged on at least one face of the substrate at intervals in the first direction, the strip-shaped doping parts extend in the second direction, and the first direction intersects with the second direction; the plurality of communication parts are arranged on the surface, provided with the strip-shaped doping parts, of the substrate, the plurality of communication parts in the same second direction are arranged at intervals, the communication parts extend in the first direction, and the communication parts are connected with two adjacent strip-shaped doping parts; the first current collection electrode is arranged on the strip-shaped doping part on one surface of the substrate, and the first current collection electrode extends along a second direction; wherein the width of the strip-shaped doping part in the first direction is greater than the width of the communication part in the second direction.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and particularly to a solar cell and a photovoltaic module. Background Art

[0002] The surface of a solar cell has a doped conductive region, and a metal electrode is disposed on the doped conductive region. The metal electrode is used to collect the current generated in the doped conductive region, and finally the current is collected and led out through an interconnecting member. The setting of doped conductive regions with different shapes affects the energy conversion efficiency of the solar cell. The patterning of the doped conductive regions of existing solar cells needs to be further optimized to improve the energy conversion efficiency of the solar cell. Summary of the Invention

[0003] The purpose of the present invention is to provide a solar cell and a photovoltaic module to optimize the patterning of the doped conductive region of the solar cell and improve the energy conversion efficiency.

[0004] In a first aspect, the present invention provides a solar cell, comprising:

[0005] a substrate having two opposite surfaces;

[0006] a plurality of strip-shaped doping portions spaced apart along a first direction on at least one surface of the substrate, the strip-shaped doping portions extending along a second direction, the first direction intersecting the second direction;

[0007] a plurality of connecting portions disposed on the surface of the substrate having the strip-shaped doping portions, the plurality of connecting portions in the same second direction being spaced apart, the connecting portions extending along the first direction, the connecting portions connecting two adjacent strip-shaped doping portions;

[0008] a first current collecting electrode disposed on the strip-shaped doping portions on one surface of the substrate, the first current collecting electrode extending along the second direction;

[0009] wherein the width of the strip-shaped doping portion in the first direction is greater than the width of the connecting portion in the second direction.

[0010] In the case of adopting the above technical solution, a first collector electrode is arranged on the strip-shaped doping part. The strip-shaped doping part collects carriers in the substrate, and the first collector electrode collects the current at the strip-shaped doping part. The connecting part connects two adjacent strip-shaped doping parts, which can reduce the lateral transmission resistance of the carriers, facilitate the rapid collection and transfer of the carriers, and improve the energy conversion efficiency. The large area of the connecting part has an adverse effect on carrier recombination and increased parasitic absorption, so the width of the connecting part should be minimized as much as possible. At the same time, since the strip-shaped doping part is the main doping part for collecting carriers, in order to improve the carrier collection ability of the strip-shaped doping part, the width of the strip-shaped doping part can be set relatively wide. The connecting part only needs to adjust the carriers collected by some strip-shaped doping parts. Therefore, considering the above factors comprehensively, the width of the strip-shaped doping part in this application is greater than the width of the connecting part, realizing the optimization of the doped conductive region and improving the energy conversion efficiency.

[0011] In some possible implementation manners, the ratio of the width of the connecting part provided with the first bus electrode to the width of the strip-shaped doping part is 1:3 to 1:1.1.

[0012] In the case of adopting the above technical solution, if the ratio of the width of the connecting part to the width of the strip-shaped doping part is less than 1:3, then the width of the connecting part is too narrow or the width of the strip-shaped doping part is too wide. When the width of the connecting part is too narrow, on the one hand, it does not meet the basic carrier collection and lateral transmission capabilities, and on the other hand, it has a higher printing accuracy requirement for the first bus electrode, increasing the process difficulty. When the width of the strip-shaped doping part is too wide, within a certain range, it increases parasitic absorption and carrier recombination, which is not conducive to the improvement of energy conversion efficiency. If the ratio is greater than 1:1.1, then the width of the connecting part is too wide or the width of the strip-shaped doping part is too narrow. When the width of the connecting part is too wide, it increases parasitic absorption and carrier recombination. When the width of the strip-shaped doping part is too narrow, the carrier collection ability is reduced, both of which are not conducive to the improvement of energy conversion efficiency. Considering comprehensively, setting the ratio to 1:2 to 1:1.1 can ensure that the carrier collection and lateral transmission capabilities of both the strip-shaped doping part and the connecting part match each other and no redundancy will occur.

[0013] In some possible implementation manners, the solar cell further includes a first bus electrode. The first bus electrode is arranged on a part of the connecting part. The first bus electrode extends along the first direction, and the first bus electrode is electrically connected to the first collector electrode.

[0014] In the case of adopting the above technical solution, a first collector electrode is provided on the strip-shaped doped part, and carriers in the substrate are collected through the strip-shaped doped part, and the current at the strip-shaped doped part is collected through the first collector electrode. A first bus electrode is provided on part of the connecting part, and the first bus electrode is electrically connected to the first collector electrode. The first bus electrode is mainly used to collect the current on the first collector electrode and then derive the current through the interconnection member. The connecting part without the first bus electrode connects two adjacent strip-shaped doped parts, which can reduce the lateral transmission resistance of the carriers, facilitate the rapid collection and transfer of carriers, and improve the energy conversion efficiency. In addition, the main function of the first bus electrode is to connect with the first collector electrode and collect the current on the first collector electrode. Therefore, considering the adverse effects of the large area of ​​the connecting part provided with the first bus electrode on carrier recombination and increased parasitic absorption, the width of the connecting part provided with the first bus electrode is minimized. At the same time, since the strip-shaped doped portion serves as the main doped portion for collecting carriers, in order to improve the carrier collection capacity of the strip-shaped doped portion, the width of the strip-shaped doped portion can be set relatively wide. Taking the above factors into consideration, the width of the strip-shaped doped portion of the present application is greater than the width of the connecting portion, thereby achieving optimization of the doped conductive area and improving the energy conversion efficiency.

[0015] In some possible implementations, the width of the connecting portion provided with the first bus electrode is greater than or equal to the width of the connecting portion not provided with the first bus electrode. Since the main function of the connecting portion not provided with the first bus electrode is to connect adjacent strip-shaped doped portions, as long as the connection of the strip-shaped doped portions can be achieved, considering the adverse effects of the larger area of ​​the connecting portion on carrier recombination and increased parasitic absorption, the width of the connecting portion not provided with the first bus electrode is minimized and does not exceed the width of the connecting portion provided with the first bus electrode.

[0016] In some possible implementations, the width of the strip doping portion is 90μm to 900μm; in this way, if the width of the strip doping portion is less than 90μm, the width of the strip doping portion is too narrow, and the carrier collection capacity is reduced; if the width of the strip doping portion is greater than 900μm, the width of the strip doping portion is too wide, and within a certain range, the parasitic absorption and carrier recombination are increased, which is not conducive to the improvement of energy conversion efficiency. Therefore, the width of the strip doping portion is selected to be 90μm to 900μm, so as to improve the carrier collection capacity while reducing parasitic absorption and carrier recombination, thereby improving energy conversion efficiency.

[0017] In some possible implementation manners, the width of the connection part of the first bus electrode is 30 μm to 850 μm. In this way, if the width of the connection part is less than 30 μm, the width of the connection part is too narrow. On the one hand, it does not meet the basic carrier collection and lateral transmission capabilities. On the other hand, it has a high requirement for the printing accuracy of the first bus electrode, increasing the process difficulty. If the width of the connection part is greater than 850 μm, the parasitic absorption and carrier recombination are increased. Therefore, the width of the connection part of the first bus electrode is selected to be 30 μm to 850 μm to meet the carrier collection and lateral transmission capabilities, reduce the processing difficulty, while reducing the parasitic absorption and carrier recombination, and improving the energy conversion efficiency.

[0018] In some possible implementation manners, the width of the connection part without the first bus electrode is 30 μm to 800 μm. If the width of the connection part is less than 30 μm, the lateral transmission ability of the connection part is too small, and the effect of connecting adjacent strip-shaped doped parts is not ideal. If the width of the connection part is greater than 800 μm, the parasitic absorption and carrier recombination are increased, which are not conducive to improving the energy conversion efficiency. Therefore, the width of the connection part without the first bus electrode is selected to be 30 μm to 800 μm to realize the carrier lateral transmission ability of adjacent strip-shaped doped parts, while reducing the parasitic absorption and carrier recombination, and improving the energy conversion efficiency.

[0019] In some possible implementation manners, the ratio of the width of the first collector electrode to the width of the corresponding strip-shaped doped part is 1:25 to 1:15. If the ratio is less than 1:25, the width of the first collector electrode is too narrow or the width of the strip-shaped doped part is too wide. If the width of the first collector electrode is too narrow, the contact resistance increases and the current transmission ability decreases. If the width of the strip-shaped doped part is too wide, the parasitic absorption and carrier recombination are increased, which are not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:15, the width of the first collector electrode is too wide or the width of the strip-shaped doped part is too narrow. If the width of the first collector electrode is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. If the width of the strip-shaped doped part is too narrow, the carrier collection ability is reduced, which is not conducive to improving the energy conversion efficiency. Therefore, the ratio range of the two is selected to be 1:25 to 1:15, avoiding the electrode printing exceeding the coverage area of the strip-shaped doped part, ensuring the carrier collection ability of the strip-shaped doped part and the matching of the corresponding electrode, and avoiding the adverse effects caused by redundant strip-shaped doped parts.

[0020] In some possible implementation manners, the ratio of the width of the first bus electrode to the width of the connection part provided with the first bus electrode is 1:20 to 1:5. If the ratio is less than 1:20, the width of the first bus electrode is too narrow or the width of the connection part is too wide. When the width of the first bus electrode is too narrow, the current transmission capacity is reduced. When the width of the connection part is too wide, the parasitic absorption and carrier recombination are increased, which are not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:5, the width of the first bus electrode is too wide or the width of the connection part is too narrow. When the width of the first bus electrode is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. When the width of the connection part is too narrow, the carrier collection capacity is reduced, which is not conducive to improving the energy conversion efficiency, and the alignment accuracy requirement for the first bus electrode and the connection part is relatively high, increasing the process difficulty. Setting the ratio range of the two to 1:20 to 1:5 can ensure the width ratio of the first bus electrode and its corresponding connection part, avoid the electrode printing exceeding the coverage area of the connection part, and ensure the carrier collection capacity of the connection part and the matching of the corresponding electrode, and can also avoid the adverse effects caused by redundant connection parts.

[0021] In some possible implementation manners, the width of the first current collecting electrode is 5 μm to 50 μm. If the width of the first current collecting electrode is less than 5 μm, the width of the first current collecting electrode is too narrow, the contact resistance increases, and the current transmission capacity is reduced. If the width of the first current collecting electrode is greater than 50 μm, the width of the first current collecting electrode is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. Therefore, selecting the width of the first current collecting electrode to be 5 μm to 50 μm can improve the current transmission capacity while reducing the light shielding area, increasing the energy utilization rate per unit area, and reducing the cost of the electrode paste.

[0022] In some possible implementation manners, the width of the first bus electrode is 6 μm to 60 μm. If the width of the first bus electrode is less than 6 μm, the width of the first bus electrode is too narrow, and the current transmission capacity is reduced. If the width of the first bus electrode is greater than 60 μm, the width of the first bus electrode is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. Therefore, selecting the width of the first bus electrode to be 6 μm to 60 μm can improve the current transmission capacity while reducing the light shielding area, increasing the energy utilization rate per unit area, and reducing the cost of the electrode paste.

[0023] In some possible implementation manners, the ratio of the spacing distance between two adjacent strip doping portions to the width of the strip doping portion is 1:1.2 to 1:0.8. If the ratio is less than 1:1.2, the spacing distance is too narrow or the strip doping portion is too wide, and thus the parasitic absorption and carrier recombination are serious, which is not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:0.8, the spacing distance is too wide or the strip doping portion is too narrow, and thus the lateral transport distance of carriers is increased and the carrier collection ability is reduced, which is not conducive to improving the energy conversion efficiency. Defining the ratio between the two as 1:1.2 to 1:0.8 can reduce the parasitic absorption and carrier recombination while improving the ability of rapid carrier collection and transfer.

[0024] In some possible implementation manners, the spacing distance between two adjacent strip doping portions is 150 μm to 750 μm. If the spacing distance is less than 150 μm, the spacing distance is too narrow, resulting in an overly large strip doping portion area, and thus the parasitic absorption and carrier recombination are serious, which is not conducive to improving the energy conversion efficiency. If the spacing distance is greater than 750 μm, the spacing distance is too wide and the strip doping portion area is too small, increasing the lateral transport distance of carriers and reducing the carrier collection ability, which is not conducive to improving the energy conversion efficiency. Defining the spacing distance as 150 μm to 750 μm can reduce the parasitic absorption and carrier recombination while improving the ability of rapid carrier collection and transfer.

[0025] In some possible implementation manners, the spacing distance between two adjacent first collector electrodes is 850 μm to 950 μm. If the spacing distance is less than 850 μm, the arrangement density of the first collector electrodes is relatively large, and the corresponding spacing distance of the strip doping portions is too small, resulting in an overly large strip doping portion area, and thus the parasitic absorption and carrier recombination are serious, which is not conducive to improving the energy conversion efficiency. If the spacing distance is greater than 950 μm, the arrangement density of the first collector electrodes is relatively small, and the corresponding spacing distance of the strip doping portions is too wide and the strip doping portion area is too small, increasing the lateral transport distance of carriers and reducing the carrier collection ability, which is not conducive to improving the energy conversion efficiency. Defining the spacing distance as 850 μm to 950 μm can reduce the parasitic absorption and carrier recombination while improving the ability of rapid carrier collection and transfer.

[0026] In some possible implementation manners, the materials of the strip doping portion and the connection portion include doped polysilicon, doped microcrystalline silicon, doped nanocrystalline silicon, or doped amorphous silicon. Thus, when the materials include doped polysilicon, doped microcrystalline silicon, or doped nanocrystalline silicon, the strip doping portion and the connection portion can form a tunneling passivation contact structure, which has the advantages of high conversion efficiency, good stability, and low Auger recombination for the tunneling passivation contact structure. Moreover, when preparing the strip doping portion and the connection portion, the phosphosilicate glass or borosilicate glass formed on the surfaces of the strip doping portion and the connection portion can be used as a protective layer, and the remaining regions can be etched away without separately manufacturing a mask, simplifying the process. When the materials include doped amorphous silicon, the strip doping portion and the connection portion can form a heterojunction structure, which has the advantages of good passivation effect, high conversion efficiency, long service life, and low preparation energy consumption for the heterojunction structure.

[0027] In some possible implementation manners, the solar cell further includes a passivation layer, the passivation layer is disposed on one side of the substrate having the strip doping portion and the connection portion, and the strip doping portion and the connection portion are disposed on the passivation layer. Thus, both the strip doping portion and the passivation layer and the connection portion and the passivation layer are combined to form a passivation contact structure. When the passivation contact structure is a tunneling passivation contact structure, the solar cell has the advantages of high conversion efficiency, good stability, and low Auger recombination for the tunneling passivation contact structure. When it is a heterojunction structure, the solar cell has the advantages of good passivation effect, high conversion efficiency, long service life, and low preparation energy consumption for the heterojunction structure.

[0028] In some possible implementation manners, the pattern of the passivation layer matches the patterns of the strip doping portion and the connection portion.

[0029] In some possible implementation manners, strip doping portions and connection portions are disposed on both sides of the substrate, and the solar cell further includes a second collector electrode disposed on the other side of the substrate opposite to the surface where the first collector electrode is located; and / or, the solar cell further includes a second collector electrode and a second bus bar electrode disposed on the other side of the substrate opposite to the surface where the first collector electrode is located, and the second collector electrode is electrically connected to the second bus bar electrode.

[0030] In the case of adopting the above technical solution, the solar cell is a bifacial cell, which improves the bifaciality of the solar cell.

[0031] In a second aspect, the invention also provides a photovoltaic module, including:

[0032] A battery string, which is formed by electrically connecting a plurality of solar cells as described in any one of the above;

[0033] An interconnector, which is electrically connected to the solar cell;

[0034] And a packaging layer, which covers the surface of the battery string.

[0035] Since the photovoltaic module uses the solar cells in the first aspect and any one of the above implementation manners, it has the same beneficial effects as the first aspect and any implementation manner, and will not be elaborated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0037] Figure 1 is a schematic structural diagram of a strip doping portion and a connecting portion of a solar cell provided by an embodiment of the present invention;

[0038] Figure 2 is a schematic structural diagram of a solar cell provided by an embodiment of the present invention.

[0039] Reference numerals: 1 is a strip doping portion, 2 is a first collecting electrode, 3 is a connecting portion, 4 is a first busbar electrode, 5 is a substrate, 6 is a first passivation layer, 7 is a first antireflection layer, 8 is a passivation layer, 9 is a second passivation layer, 10 is a second antireflection layer, 11 is a second collecting electrode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0040] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0041] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0042] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality" means two or more unless otherwise specifically defined. The meaning of "several" is one or more unless otherwise specifically defined.

[0043] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present invention.

[0044] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] The surface of the solar cell has a doped conductive region, and a metal electrode is arranged on the doped conductive region. The metal electrode is used to collect the current generated in the doped conductive region, and finally the current is collected and led out through the interconnector. The interconnector can be an external solder tape or a conductive layer. The setting of doped conductive regions with different shapes affects the energy conversion efficiency of the solar cell. The patterning of the doped conductive regions of the existing solar cells needs to be further optimized to improve the energy conversion efficiency of the solar cells.

[0046] In a first aspect, as Figure 1 and Figure 2As shown in the figure, an embodiment of the present invention provides a solar cell, which includes a substrate 5, a plurality of strip-shaped doping portions 1, a plurality of connecting portions 3, and a first current collecting electrode 2. Among them, the substrate 5 has opposite first and second surfaces. The first surface can be the backlight surface (back surface), and the second surface can be the light-receiving surface (front surface). Or the first surface can be the light-receiving surface and the second surface can be the backlight surface. The plurality of strip-shaped doping portions 1 are arranged at intervals along a first direction on at least one surface of the substrate 5, that is, the first surface and / or the second surface. The strip-shaped doping portions 1 extend along a second direction. The first direction intersects with the second direction, specifically, they can be perpendicular. The conduction types of the strip-shaped doping portions 1 on the same surface of the substrate 5 are the same. The plurality of connecting portions 3 are arranged on the surface of the substrate 5 where the strip-shaped doping portions 1 are located. The plurality of connecting portions 3 in the same second direction are arranged at intervals. The connecting portions 3 extend along the first direction. The connecting portions 3 connect two adjacent strip-shaped doping portions 1. The conduction type of the connecting portions 3 is the same as that of the strip-shaped doping portions 1. The connecting portions 3 are also doping portions. The doping concentrations of the connecting portions 3 and the strip-shaped doping portions 1 can be the same or different. The first current collecting electrode 2 is arranged on the strip-shaped doping portions 1. The first current collecting electrode 2 extends along the second direction. The first current collecting electrode 2 is arranged on each strip-shaped doping portion 1. The plurality of connecting portions 3 can be discontinuous and not located on a straight line parallel to the first direction. Or, the plurality of connecting portions 3 can also be continuous and located on a straight line parallel to the first direction. The specific position of the plurality of connecting portions 3 is not limited in this embodiment and can be set according to actual needs. The first bus bar electrode 4 can also be called the main grid electrode, and the first current collecting electrode 2 can also be called the fine grid electrode, the auxiliary grid electrode, etc.

[0047] Among them, the width of the strip-shaped doping portion 1 in the first direction is greater than the width of the connecting portion 3 in the second direction. It should be noted that the width of the strip-shaped doping portion 1 mentioned below refers to the width of the strip-shaped doping portion 1 in the first direction, and the width of the connecting portion 3 refers to the width of the connecting portion 3 in the second direction. And the following takes the structures such as the strip-shaped doping portion 1, the connecting portion 3, and the first current collecting electrode 2 arranged on one surface of the substrate 5 as an example for illustration.

[0048] In the case of adopting the above technical solution, a first collector electrode 2 is provided on the strip-shaped doping portion 1. The strip-shaped doping portion 1 collects carriers in the substrate 5, and the first collector electrode 2 collects the current at the strip-shaped doping portion 1. The connecting portion 3 connects two adjacent strip-shaped doping portions 1, which can reduce the lateral transport resistance of the carriers, facilitate the rapid collection and transfer of the carriers, and improve the energy conversion efficiency. The relatively large area of the connecting portion 3 has an adverse effect on carrier recombination and increased parasitic absorption. Therefore, the width of the connecting portion 3 should be minimized as much as possible. At the same time, since the strip-shaped doping portion 1 is the main doping portion for collecting carriers, in order to improve the carrier collection ability of the strip-shaped doping portion 1, the width of the strip-shaped doping portion 1 can be set relatively wide. The connecting portion only needs to adjust the carriers collected by some of the strip-shaped doping portions 1. Therefore, considering the above factors, the width of the strip-shaped doping portion 1 in this application is greater than the width of the connecting portion 3, realizing the optimization of the doped conductive region and improving the energy conversion efficiency.

[0049] In the actual application process, the embodiments of the present invention do not specifically limit the material and conductivity type of the substrate. Exemplarily, the above substrate can be a silicon substrate. Alternatively, the above substrate can also be a substrate of any semiconductor material such as a germanium-silicon substrate, a germanium substrate, or a gallium arsenide substrate. The conductivity type of the substrate can be an N-type semiconductor substrate, a P-type semiconductor substrate, or an intrinsic semiconductor substrate. The strip-shaped doping portion and the connecting portion located on the same side of the substrate can be a doped semiconductor layer provided on the surface of the substrate or a doped semiconductor layer located within the surface of the substrate. In terms of materials, the materials of the strip-shaped doping portion and the connecting portion can be semiconductor materials such as silicon, germanium-silicon, germanium, or gallium arsenide. In terms of doping concentration, the doping concentrations of the strip-shaped doping portion and the connecting portion are higher than the doping concentration of the substrate. In terms of conductivity type, the conductivity types of the strip-shaped doping portion and the connecting portion on one side of the substrate can be opposite to the conductivity type of the substrate, can be the same as the conductivity type of the substrate, or the conductivity types of the strip-shaped doping portion and the connecting portion on one side of the substrate can be opposite to the conductivity type of the substrate, and the conductivity types of the strip-shaped doping portion and the connecting portion on the other side of the substrate can be the same as the conductivity type of the substrate, as long as it is ensured that the conductivity types of the strip-shaped doping portion and the connecting portion located on the same side are the same.

[0050] In some embodiments, the solar cell also includes a first bus electrode 4, and the first bus electrode 4 is arranged on a part of the connecting portion 3, the first bus electrode 4 extends along the first direction, the first bus electrode 4 is electrically connected to the first collecting electrode 2, and multiple connecting portions 3 provided with the same first bus electrode 4 are located on a straight line parallel to the first direction and form a continuous structure, and multiple connecting portions 3 not provided with the first bus electrode 4 may be discontinuous and not located on a straight line parallel to the first direction, or, multiple connecting portions 3 not provided with the first bus electrode 4 may also be continuous and located on a straight line parallel to the first direction. For the connecting portion 3 not provided with the first bus electrode 4, this embodiment does not make a specific position limitation, and its position is set according to actual needs.

[0051] In the case of adopting the above technical solution, a first collector electrode 2 is provided on the strip-shaped doped part 1, and the carriers in the substrate 5 are collected through the strip-shaped doped part 1, and the current at the strip-shaped doped part 1 is collected through the first collector electrode 2. A first bus electrode 4 is provided on part of the connecting part 3, and the first bus electrode 4 is electrically connected to the first collector electrode 2. The first bus electrode 4 is mainly used to collect the current collected by the first collector electrode 2 and then derive the current through the interconnection member. The connecting part 3 without the first bus electrode 4 connects two adjacent strip-shaped doped parts 1, which can reduce the lateral transmission resistance of the carriers, facilitate the rapid collection and transfer of the carriers, and improve the energy conversion efficiency. Since the main function of the connecting part 3 without the first bus electrode 4 is to connect the adjacent strip-shaped doped parts 1 and reduce the lateral transmission resistance of the carriers, the width of the connecting part 3 can be as long as it can achieve the connection between the two adjacent strip-shaped doped parts 1. Considering the adverse effects of the large area of ​​the connecting part 3 on the carrier recombination and the increase of parasitic absorption, the width of the connecting part 3 is minimized. In addition, the main function of the first bus electrode 4 is to connect with the first collector electrode 2 and collect the current on the first collector electrode 2. Therefore, considering the adverse effects of the large area of ​​the connecting portion 3 provided with the first bus electrode 4 on carrier recombination and increased parasitic absorption, the width of the connecting portion 3 provided with the first bus electrode 4 is minimized. At the same time, since the strip-shaped doped portion 1 is the main doped portion for collecting carriers, in order to improve the carrier collection capacity of the strip-shaped doped portion 1, the width of the strip-shaped doped portion 1 can be set relatively wide. Taking the above factors into consideration, the width of the strip-shaped doped portion 1 of the present application is greater than the width of the connecting portion 3, which achieves the optimization of the doped conductive area and improves the energy conversion efficiency.

[0052] In some possible implementation manners, the ratio of the width of the connecting portion 3 provided with the first bus electrode 4 to the width of the strip-shaped doping portion 1 is set to be 1:3 to 1:1.1. For example, the ratio can be 1:3, 1:2.8, 1:2.6, 1:2.4, 1:2.2, 1:2, 1:2.4, 1:1.9, 1:1.8, 1:1.7, 1:1.6, 1:1.5, 1:1.4, 1:1.3, 1:1.2, 1:1.1, etc. With such a setting, when the ratio of the width of the connecting portion 3 provided with the first bus electrode 4 to the width of the strip-shaped doping portion 1 is less than 1:3, the width of the connecting portion 3 is too narrow or the width of the strip-shaped doping portion 1 is too wide. If the width of the connecting portion 3 is too narrow, on the one hand, it does not meet the basic carrier collection and lateral transmission capabilities, and on the other hand, it has a higher requirement for the printing accuracy of the first bus electrode 4, increasing the process difficulty. If the width of the strip-shaped doping portion 1 is too wide, within a certain range, the parasitic absorption and carrier recombination are increased, which is not conducive to the improvement of the energy conversion efficiency. If the ratio is greater than 1:1.1, the width of the connecting portion 3 is too wide or the width of the strip-shaped doping portion 1 is too narrow. If the width of the connecting portion 3 is too wide, the parasitic absorption and carrier recombination are increased. If the width of the strip-shaped doping portion 1 is too narrow, the carrier collection ability is reduced, both of which are not conducive to the improvement of the energy conversion efficiency. Considering comprehensively, setting the ratio to 1:3 to 1:1.1 can ensure that the carrier collection and lateral transmission capabilities of the strip-shaped doping portion and the connecting portion match each other and no redundancy is generated.

[0053] In some embodiments, the width of the connecting portion 3 provided with the first bus electrode 4 is greater than or equal to the width of the connecting portion 3 not provided with the first bus electrode 4. Since the main function of the connecting portion 3 not provided with the first bus electrode 4 is to connect adjacent strip-shaped doping portions 1, therefore, as long as the connection of the strip-shaped doping portions 1 can be achieved. Considering the adverse effects of the relatively large area of the connecting portion 3 on the increase of carrier recombination and parasitic absorption, the width of the connecting portion 3 not provided with the first bus electrode 4 is minimized and does not exceed the width of the connecting portion 3 provided with the first bus electrode 4.

[0054] In some embodiments, the width of the strip-shaped doping portion 1 is 90 μm to 900 μm, and specifically can be 90 μm, 110 μm, 130 μm, 150 μm, 90 μm, 90 μm, 90 μm, 90 μm, 150 μm, 180 μm, 200 μm, 220 μm, 250 μm, 270 μm, 300 μm, 330 μm, 350 μm, 380 μm, 400 μm, 420 μm, 440 μm, 460 μm, 480 μm, 500 μm, 520 μm, 540 μm, 560 μm, 580 μm, 600 μm, 620 μm, 640 μm, 680 μm, 700 μm, 720 μm, 750 μm, 780 μm, 800 μm, 820 μm, 840 μm, 860 μm, 880 μm, 900 μm, etc. Thus, when the width of the strip-shaped doping portion 1 is less than 90 μm, the width of the strip-shaped doping portion 1 is too narrow, and the carrier collection ability is reduced. When the width of the strip-shaped doping portion 1 is greater than 900 μm, the width of the strip-shaped doping portion 1 is too wide, and within a certain range, the parasitic absorption and carrier recombination are increased, which are not conducive to the improvement of the energy conversion efficiency. Therefore, considering improving the carrier collection ability, reducing the parasitic absorption and reducing the carrier recombination, the width of the strip-shaped doping portion 1 in this embodiment is selected to be 90 μm to 900 μm.

[0055] In some possible implementation manners, the width of the connecting portion 3 provided with the first bus electrode 4 is 30 μm to 850 μm, and specifically can be 30 μm, 50 μm, 70 μm, 90 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 360 μm, 380 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, 800 μm, 850 μm, etc.; thus, when the width of the connecting portion 3 is less than 30 μm, the width of the connecting portion 3 is too narrow. On the one hand, it does not meet the basic carrier collection and lateral transmission capabilities, affecting the energy conversion efficiency. On the other hand, the printing alignment accuracy requirements for the first bus electrode 4 are relatively high, increasing the process difficulty. If the width of the connecting portion 3 is greater than 850 μm, the parasitic absorption and carrier recombination are increased, which also affects the energy conversion efficiency. Therefore, considering improving the carrier collection ability, lateral transmission ability, reducing the parasitic absorption and reducing the carrier recombination, the width of the connecting portion 3 provided with the first bus electrode 4 in this application is selected to be 30 μm to 850 μm.

[0056] In some embodiments, the width of the connecting portion 3 without the first current collecting electrode 4 is 30 μm to 800 μm, specifically, it can be 30 μm, 50 μm, 70 μm, 90 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 360 μm, 380 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, 800 μm, etc. If the width of the connecting portion 3 is less than 30 μm, the lateral transmission ability of the connecting portion 3 is too small, and the effect of connecting adjacent strip-shaped doped portions 1 is not ideal. If the width of the connecting portion 3 is greater than 800 μm, the width of the connecting portion 3 is too large, increasing parasitic absorption and carrier recombination, both of which are not conducive to improving the energy conversion efficiency. Therefore, the width of the connecting portion 3 without the first current collecting electrode 4 is selected to be 30 μm to 800 μm to achieve the lateral carrier transmission ability of adjacent strip-shaped doped portions 1 while reducing parasitic absorption and carrier recombination and improving the energy conversion efficiency.

[0057] In some embodiments, the width of the first current collecting electrode 2 refers to the width in the first direction, that is, the width perpendicular to the extending direction of the first current collecting electrode 2. The ratio of the width of the first current collecting electrode 2 to the width of the strip-shaped doped portion 1 is 1:25 to 1:15. Specifically, the ratio can be 1:25, 1:24, 1:23, 1:22.5, 1:22, 1:21, 1:20, 1:19, 1:18, 1:17, 1:16, 1:15, etc. If the ratio is less than 1:25, the width of the first current collecting electrode 2 is too narrow or the width of the strip-shaped doped portion 1 is too wide. If the width of the first current collecting electrode 2 is too narrow, the contact resistance increases and the current transmission ability decreases; if the width of the strip-shaped doped portion 1 is too wide, parasitic absorption and carrier recombination increase, both of which are not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:15, the width of the first current collecting electrode 2 is too wide or the width of the strip-shaped doped portion 1 is too narrow. If the width of the first current collecting electrode 2 is too wide, the light shielding area increases, the energy utilization rate per unit area decreases, and the cost of the electrode paste increases. If the width of the strip-shaped doped portion 1 is too narrow, the carrier collection ability decreases, which is not conducive to improving the energy conversion efficiency. Therefore, considering reducing the contact resistance, improving the current transmission ability, reducing parasitic absorption and reducing carrier recombination, the ratio of the width of the first current collecting electrode 2 to the width of the strip-shaped doped portion 1 in this application is selected to be 1:25 to 1:15, avoiding the electrode printing exceeding the coverage area of the strip-shaped doped portion, ensuring the carrier collection ability of the strip-shaped doped portion and the corresponding electrode matching, and also avoiding the adverse effects caused by redundant strip-shaped doped portions.

[0058] In some possible implementation manners, the width of the first bus electrode 4 refers to the width in the second direction, that is, the width perpendicular to the extending direction of the first bus electrode 4. The ratio of the width of the first bus electrode 4 to the width of the connecting part 3 provided with the first bus electrode 4 is 1:20 to 1:5, and specifically may be 1:20, 1:19, 1:18, 1:17, 1:16, 1:15, 1:14, 1:13, 1:12, 1:11, 1:10, 1:9, 1:8, 1:7, 1:6, 1:5, etc. If the ratio is less than 1:20, the width of the first bus electrode 4 is too narrow or the width of the connecting part 3 is too wide. If the width of the first bus electrode 4 is too narrow, the current transmission capacity is reduced. If the width of the connecting part 3 is too wide, the parasitic absorption and carrier recombination are increased, which are not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:5, the width of the first bus electrode 4 is too wide or the width of the connecting part is too narrow. If the width of the first bus electrode 4 is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. If the width of the connecting part 3 is too narrow, the carrier collection capacity is reduced, which is not conducive to improving the energy conversion efficiency, and the alignment accuracy requirement for the first bus electrode 4 and the connecting part 3 is relatively high, increasing the process difficulty. Therefore, considering improving the current transmission capacity of the first bus electrode 4, reducing the electrode cost, increasing the utilization rate per unit area, reducing the parasitic absorption, reducing the carrier recombination, and reducing the alignment accuracy requirement for the electrode and the connecting part 3, the ratio of the width of the first bus electrode 4 to the width of the connecting part 3 provided with the first bus electrode 4 in this application is selected to be 1:20 to 1:5, ensuring the width ratio of the first bus electrode and its corresponding connecting part, avoiding the electrode printing exceeding the coverage area of the connecting part, and being able to ensure the carrier collection capacity of the connecting part and the matching of the corresponding electrode, and also avoiding the adverse effects caused by redundant connecting parts.

[0059] In some embodiments, the width of the first current collecting electrode 2 is 5 μm to 50 μm, and specifically may be 5 μm, 7 μm, 8 μm, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, 32 μm, 34 μm, 36 μm, 38 μm, 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, 50 μm, etc. If the width of the first current collecting electrode 2 is less than 5 μm, the width of the first current collecting electrode 2 is too narrow, the contact resistance increases, and the current transmission capacity is reduced. If the width of the first current collecting electrode 2 is greater than 50 μm, the width of the first current collecting electrode 2 is too wide, the light shielding area is increased, the energy utilization rate per unit area is reduced, and the cost of the electrode paste is increased. Considering reducing the contact resistance, improving the current transmission capacity, increasing the energy utilization rate per unit area, and reducing the cost of the electrode paste, the width of the first current collecting electrode 2 in this application is selected to be 5 μm to 50 μm.

[0060] In some embodiments, the width of the first bus electrode 4 is 6 μm to 60 μm, and specifically can be 6 μm, 8 μm, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, 32 μm, 34 μm, 36 μm, 38 μm, 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, 50 μm, etc. If the width of the first bus electrode 4 is less than 6 μm, the width of the first bus electrode 4 is too narrow, and the current transmission capacity is reduced. If the width of the first bus electrode 4 is greater than 50 μm, the width of the first bus electrode 4 is too wide, increasing the light shielding area, reducing the energy utilization rate per unit area, and increasing the cost of the electrode paste. Considering reducing the contact resistance, improving the current transmission capacity, increasing the energy utilization rate per unit area, and reducing the cost of the electrode paste, the width of the first bus electrode 4 in this application is selected to be 6 μm to 50 μm.

[0061] In some embodiments, the ratio of the spacing distance between two adjacent strip doping portions 1 to the width of the strip doping portion 1 is 1:1.2 to 1:0.8, and the specific ratio can be 1:1.2, 1:1.1, 1:1, 1:0.9, 1:0.8, etc., that is, the spacing distance is similar to the width of the strip doping portion 1. If the ratio is less than 1:1.2, the spacing distance is too narrow or the width of the strip doping portion 1 is too wide, which means that the area occupied by the strip doping portion 1 is relatively large, and the parasitic absorption and carrier recombination are serious, which is not conducive to improving the energy conversion efficiency. If the ratio is greater than 1:0.8, the spacing distance is too wide or the strip doping portion is too narrow, which increases the lateral carrier transmission distance and reduces the carrier collection ability, which is not conducive to improving the energy conversion efficiency. Therefore, considering reducing the parasitic absorption, reducing the carrier recombination, shortening the lateral carrier transmission distance, and improving the carrier rapid collection and transfer ability, the ratio of the spacing distance between two adjacent strip doping portions 1 to the width of the strip doping portion 1 in this application is selected to be 1:1.2 to 1:0.8.

[0062] It should be noted that the spacing distance between two adjacent strip doping portions 1, that is, the grooving distance, is highly correlated with the laser spot size. During fabrication, the positions of the strip doping portions are reserved, and laser grooving is performed at the remaining positions to obtain the spacing. The spacing distance can be the width of one or more laser spots. The laser spot sizes are mainly square spots of 150*150±100um and rectangular spots of 90*250~150*400um. If the spot overlap rate is too high, it will lead to multiple local processes and poor overall uniformity. Therefore, the current overlap of the spot marking direction is approximately 0~200um, and the spacing distance is basically an integer multiple of the spot size. The spacing distance is determined according to the test verification results. The wider the spacing distance, the higher the increase in Isc (short-circuit current), and the more serious the decrease in FF (fill factor). On the contrary, the fewer the intervals, the less the increase in Isc and the less the loss of FF.

[0063] In some embodiments, the spacing distance between two adjacent strip doping portions 1 is 150μm~750μm, specifically, it can be 150μm, 180μm, 200μm, 220μm, 250μm, 270μm, 300μm, 330μm, 350μm, 380μm, 400μm, 420μm, 440μm, 460μm, 480μm, 500μm, 520μm, 540μm, 560μm, 580μm, 600μm, 620μm, 640μm, 680μm, 700μm, 720μm, 750μm, etc. If the spacing distance is less than 150μm, the spacing is too narrow, resulting in an overly large area of the strip doping portion 1, and serious parasitic absorption and carrier recombination, which is not conducive to improving the energy conversion efficiency. If the spacing distance is greater than 750μm, the spacing is too wide, and the area of the strip doping portion 1 is too small, increasing the lateral transport distance of carriers and reducing the carrier collection ability, which is not conducive to improving the energy conversion efficiency. Setting the spacing distance to 150μm~750μm can reduce parasitic absorption and carrier recombination while enhancing the ability of rapid carrier collection and transfer.

[0064] In some embodiments, the spacing distance between two adjacent first current collecting electrodes 2 is 850 μm to 950 μm, and specifically may be 850 μm, 860 μm, 870 μm, 880 μm, 890 μm, 900 μm, 910 μm, 920 μm, 930 μm, 940 μm, 950 μm. If the spacing distance is less than 850 μm, the arrangement density of the first current collecting electrodes 2 is relatively large, the spacing distance of the corresponding strip doping portions 1 is too small, the area of the strip doping portions 1 is too large, and the parasitic absorption and carrier recombination are serious, which is not conducive to improving the energy conversion efficiency. If the spacing distance is greater than 950 μm, the arrangement density of the first current collecting electrodes 2 is relatively small, the spacing distance of the corresponding strip doping portions is too wide, and the area of the strip doping portions 1 is too small, the lateral transport distance of the carriers is too large, and the carrier collection ability is reduced, which is not conducive to improving the energy conversion efficiency. Setting the spacing distance to 850 μm to 950 μm can reduce parasitic absorption and carrier recombination while improving the ability of rapid carrier collection and transfer.

[0065] In some embodiments, the materials of the strip doping portion 1 and the connecting portion 3 include doped polysilicon, doped microcrystalline silicon, doped nanocrystalline silicon or doped amorphous silicon. Thus, when the materials include doped polysilicon, doped microcrystalline silicon or doped nanocrystalline silicon, the strip doping portion 1 and the connecting portion 3 can both form a tunneling passivation contact structure, which has the advantages of high conversion efficiency, good stability and low Auger recombination of the tunneling passivation contact structure. And when preparing the strip doping portion 1 and the connecting portion 3, the phosphosilicate glass or borosilicate glass formed on the surfaces of the strip doping portion 1 and the connecting portion 3 can be used as a protective layer, and the remaining regions are etched away, without the need to separately fabricate a mask, which simplifies the process. When the material includes doped amorphous silicon, the strip doping portion 1 and the connecting portion 3 can form a heterojunction structure, which has the advantages of good passivation effect, high conversion efficiency, long service life and low preparation energy consumption of the heterojunction structure.

[0066] Exemplarily, the solar cell further includes a passivation layer 8, and the passivation layer 8 is disposed on the surface of the substrate 5 having the strip doping portion 1 and the connection portion 3, and the strip doping portion 1 and the connection portion 3 are disposed on the passivation layer 8. Thus, the strip doping portion 1 and the passivation layer 8, and the connection portion 3 and the passivation layer 8 are combined to form a passivated contact structure. Specifically, when the materials of the strip doping portion 1 and the connection portion 3 include doped polysilicon, doped microcrystalline silicon or doped nanocrystalline silicon, and the passivation layer 8 is a tunneling passivation layer, the strip doping portion 1 and the connection portion 3 and the tunneling passivation layer form a tunneling passivated contact structure. At this time, the solar cell has the advantages of high conversion efficiency, good stability and low Auger recombination of the tunneling passivated contact structure. The material of the tunneling passivation layer may include materials such as silicon oxide, silicon carbide, aluminum oxide or titanium oxide. When the materials of the strip doping portion 1 and the connection portion 3 include doped amorphous silicon, and the passivation layer 8 is an intrinsic amorphous silicon layer, the strip doping portion 1 and the connection portion 3 and the intrinsic amorphous silicon layer form a heterojunction structure. At this time, the solar cell has the advantages of good passivation effect, high conversion efficiency, long service life and low preparation energy consumption of the heterojunction structure. Of course, the tunneling passivated contact structure and the heterojunction structure can exist on a solar cell at the same time, and can be located on two different surfaces of the substrate 5, or on the same surface of the substrate 5.

[0067] As Figure 2 shown, in some embodiments, the pattern of the passivation layer 8 matches the pattern of the strip doping portion 1 and the connection portion 3, that is, in the process of removing part of the doping layer, the corresponding passivation layer 8 is removed by the same process and in the same step. Under the same mask protection of the doping layer, the remaining doping layer becomes the strip doping portion 1 and the connection portion 3, and the passivation layer 8 located under the strip doping portion 1 and the connection portion 3 is left. The removal process can adopt a chemical etching process or a laser etching process, etc. Of course, the passivation layer 8 can also not be removed, and the entire passivation layer 8 is retained.

[0068] As Figure 2 shown, in some embodiments, strip doping portions 1 and connection portions 3 are disposed on both surfaces of the substrate 5. The solar cell further includes a second collector electrode 11 disposed on the other surface of the substrate 5 opposite to the surface where the first collector electrode 2 is located, and the second collector electrode 11 is correspondingly disposed on the strip doping portion 1 on this surface. That is, there is only a second fine grid electrode on this surface and no main grid electrode. Alternatively, the solar cell further includes a second collector electrode 11 and a second bus electrode disposed on the other surface of the substrate 5 opposite to the surface where the first collector electrode 2 is located. The second collector electrode 11 is correspondingly disposed on the strip doping portion 1 on this surface, and the second bus electrode is correspondingly disposed on a part of the connection portion 3 on this surface. The second collector electrode 11 is electrically connected to the second bus electrode, that is, there are both fine grid electrodes and main grid electrodes on this surface. This solar cell is a bifacial cell, which improves the bifaciality of the solar cell.

[0069] In some embodiments, the solar cell further includes a first passivation layer 6 and a first antireflection layer 7. The first passivation layer 6 is disposed on the first surface of the substrate 5, covering the strip-shaped doping portion 1, the connecting portion 3, and the exposed first surface of the substrate 1. The first antireflection layer 7 is disposed on the first passivation layer 6. The passivation effect is improved by the first passivation layer 6, carrier recombination is reduced, the cell efficiency is increased, and the reflection of incident light is reduced by the first antireflection layer 7.

[0070] Similarly, the solar cell may further sequentially dispose a second passivation layer 9 and a second antireflection layer 10 on the second surface of the substrate 5, which have the same functions as the first passivation layer 6 and the first antireflection layer 7.

[0071] In a second aspect, the invention also provides a photovoltaic module, including a battery string, an interconnector, and a packaging layer, wherein the battery string is formed by electrically connecting a plurality of solar cells as described in any one of the above embodiments; the interconnector is electrically connected to the solar cell; and the packaging layer covers the surface of the battery string.

[0072] Since the photovoltaic module uses the solar cell in the first aspect and any one of the above embodiments, it has the same beneficial effects as those in the first aspect and any implementation manner, and will not be elaborated herein.

[0073] In the description of the above embodiments, the specific features, structures, materials, or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0074] As described above, the above are only the specific implementation manners of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, and all of them should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A solar cell, characterized in that: include: a base having two opposing sides; A plurality of strip-shaped doped portions are arranged at intervals on at least one side of the substrate along a first direction, the strip-shaped doped portions extend along a second direction, and the first direction intersects the second direction; A plurality of connecting portions are arranged on one side of the substrate having the strip-shaped doped portion, the plurality of connecting portions in the same second direction are arranged at intervals, the connecting portions extend along the first direction, and the connecting portions connect two adjacent strip-shaped doped portions; A first collector electrode is disposed on the strip-shaped doped portion on one side of the substrate, and the first collector electrode extends along the second direction; Wherein, the width of the strip-shaped doped portion in the first direction is greater than the width of the connecting portion in the second direction.

2. The solar cell according to claim 1, characterized in that: The ratio of the width of the connecting portion to the width of the strip-shaped doped portion is 1:3 to 1:1.

1.

3. The solar cell according to claim 1, characterized in that The solar cell further includes a first bus electrode. The first bus electrode is disposed on a portion of the connecting portion. The first bus electrode extends along the first direction. The first bus electrode is electrically connected to the first collecting electrode.

4. The solar cell according to claim 3, characterized in that: The width of the connecting portion where the first bus electrode is provided is greater than or equal to the width of the connecting portion where the first bus electrode is not provided.

5. The solar cell according to claim 3, characterized in that: The width of the strip-shaped doped portion is 90 μm to 900 μm; And / or, the width of the connecting portion provided with the first bus electrode is 30 μm to 850 μm; And / or, the width of the connecting portion where the first bus electrode is not provided is 30 μm to 800 μm.

6. The solar cell according to claim 1, characterized in that The ratio of the width of the first collector electrode to the width of the corresponding strip-shaped doped portion is 1:25 to 1:

15.

7. The solar cell according to claim 3, characterized in that: The ratio of the width of the first bus electrode to the width of the connecting portion where the first bus electrode is provided is 1:20 to 1:

5.

8. The solar cell according to claim 3, characterized in that: The width of the first bus electrode is greater than or equal to the width of the first collector electrode.

9. The solar cell according to claim 1, characterized in that: The width of the first collector electrode is 5 μm to 50 μm.

10. The solar cell according to claim 3, characterized in that: The width of the first bus electrode is 6 μm to 60 μm.

11. The solar cell according to claim 1, characterized in that: The ratio of the spacing distance between two adjacent strip-shaped doped portions to the width of the strip-shaped doped portions is 1:1.2 to 1:0.

8.

12. The solar cell according to claim 1, characterized in that The spacing distance between two adjacent strip-shaped doped portions is 150 μm to 750 μm.

13. The solar cell according to claim 1, characterized in that The spacing distance between two adjacent first collecting electrodes is 850 μm to 950 μm.

14. The solar cell according to claim 1, characterized in that The materials of the strip-shaped doped portion and the connecting portion include doped polycrystalline silicon, doped microcrystalline silicon, doped nanocrystalline silicon or doped amorphous silicon.

15. The solar cell according to claim 1, characterized in that The solar cell further comprises a passivation layer, wherein the passivation layer is arranged on one side of the substrate having the strip-shaped doped portion and the connecting portion, and the strip-shaped doped portion and the connecting portion are arranged on the passivation layer.

16. The solar cell according to claim 15, characterized in that: The pattern of the passivation layer matches the patterns of the strip-shaped doped portions and the connecting portions.

17. The solar cell according to claim 1, characterized in that The strip-shaped doped portion and the connecting portion are disposed on both sides of the substrate, and the solar cell further comprises a second collector electrode disposed on the other side of the substrate opposite to the side where the first collector electrode is located; Alternatively, the solar cell further includes a second collecting electrode and a second bus electrode disposed on another surface of the substrate opposite to the surface where the first collecting electrode is located, and the second collecting electrode is electrically connected to the second bus electrode.

18. A photovoltaic module, characterized in that: include: A battery string, wherein the battery string is formed by electrically connecting a plurality of solar cells according to any one of claims 1 to 17; An interconnection member electrically connected to the solar cell; and a packaging layer covering the surface of the battery string.

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