Aluminum nitride vacuum detector and method of making same

Abstract

The application provides an aluminum nitride vacuum detector, which can be applied to the technical field of semiconductor and optoelectronic material, and comprises a sapphire substrate, an aluminum nitride epitaxial layer, a first electrode and a second electrode. The aluminum nitride epitaxial layer is located on the substrate, wherein a local region of the aluminum nitride epitaxial layer contains silicon atoms, and the projection of the region containing the silicon atoms on the surface of the aluminum nitride epitaxial layer does not completely cover the surface. The first electrode is located on the surface of the region containing the silicon atoms of the aluminum nitride epitaxial layer, and the second electrode is located on the surface of the region not containing the silicon atoms of the aluminum nitride epitaxial layer. By locally injecting high-concentration silicon impurities into the aluminum nitride epitaxial layer, the aluminum nitride epitaxial layer forms a good ohmic contact with the first electrode, and the second electrode forms a Schottky contact with the aluminum nitride epitaxial layer, thereby constructing a Schottky junction detector which is faster than an MSM structure detector and does not need a higher bias voltage.

Description

Technical Field

[0001] This invention relates to the field of semiconductor and optoelectronic materials technology, and in particular to an aluminum nitride vacuum detector and its preparation method. Background Technology

[0002] Aluminum nitride (AlN) possesses a wide bandgap, high electron mobility, high saturation velocity, good high-temperature resistance, and radiation resistance, making it one of the best materials for fabricating ultraviolet detectors. Furthermore, AlN has a bandgap of 6.1 eV, and vacuum ultraviolet detectors made from it have a natural cutoff edge, responding below 200 nm without requiring complex and expensive filtering systems. AlN-based Schottky detectors, due to their structural characteristics, offer advantages such as low response time and high quantum efficiency. However, AlN is difficult to fabricate into good ohmic contacts, generally limiting its fabrication to metal-semiconductor-metal (MSM) detector structures that require high bias voltages and are difficult to integrate. Additionally, in vacuum ultraviolet detector arrays with front-illuminated input, light must pass through multiple layers of structures such as leads and electrodes to reach the absorption layer, leading to light loss and reduced quantum efficiency. Summary of the Invention

[0003] (a) Technical problems to be solved

[0004] To address at least one of the aforementioned problems in existing aluminum nitride vacuum detectors, embodiments of the present invention provide an aluminum nitride vacuum detector and its fabrication method. By ion implantation of high-concentration silicon (Si) impurities, AlN achieves good ohmic contact with the electrode; another electrode forms a Schottky contact with AlN, constructing a Schottky junction detector with a faster response than MSM structure detectors and without the need for a higher bias voltage.

[0005] (II) Technical Solution

[0006] To address the aforementioned technical problems, embodiments of the present invention propose an aluminum nitride vacuum detector and its preparation method.

[0007] According to a first aspect of the present invention, an aluminum nitride vacuum detector is provided, comprising: a substrate, the substrate being made of a sapphire substrate; an aluminum nitride epitaxial layer comprising a first surface and a second surface, the first surface being located on the substrate, wherein a local region of the aluminum nitride epitaxial layer comprises silicon atoms, and the projection of the region comprising silicon atoms onto the first surface and the second surface does not completely cover the first surface and the second surface; a first electrode located on the second surface and located in the projection region of the region comprising silicon atoms on the second surface; and a second electrode located on the second surface and not located in the projection region of the region comprising silicon atoms on the second surface.

[0008] In some exemplary embodiments, an ohmic contact is formed between the first electrode and the aluminum nitride epitaxial layer; and a Schottky contact is formed between the second electrode and the aluminum nitride epitaxial layer.

[0009] In some exemplary embodiments, the first electrode includes a titanium layer, an aluminum layer, a titanium layer, and a gold layer disposed sequentially along a direction perpendicular to the second surface; the second electrode includes a nickel layer and a gold layer with an area of ​​a first area disposed sequentially along a direction perpendicular to the second surface; and a titanium layer, an aluminum layer, a titanium layer, and a gold layer with an area of ​​a second area disposed sequentially on the gold layer along a direction perpendicular to the second surface, wherein the first area is larger than the second area.

[0010] In some exemplary embodiments, the thickness of the aluminum nitride epitaxial layer is no greater than 300 nm.

[0011] In some exemplary embodiments, the thickness of the sapphire substrate is such that light can enter from one side of the sapphire substrate.

[0012] According to a second aspect of the present invention, a method for fabricating an aluminum nitride vacuum detector is provided, comprising: preparing a sapphire substrate; growing an aluminum nitride epitaxial layer on the sapphire substrate; implanting silicon elements into a local region of the aluminum nitride epitaxial layer; sputtering a first electrode at the projection position of the silicon element region on the aluminum nitride epitaxial layer; and sputtering a second electrode at the projection position of the non-silicon element region on the aluminum nitride epitaxial layer, thereby obtaining an aluminum nitride vacuum detector.

[0013] In some exemplary embodiments, growing an aluminum nitride epitaxial layer on a sapphire substrate includes: using a metal-organic chemical vapor deposition apparatus, with trimethylaluminum as the aluminum source and ammonia as the nitrogen source, to grow an aluminum nitride epitaxial layer on the sapphire substrate; annealing the epitaxial wafer with the grown epitaxial layer at a temperature of 900℃±50℃ for 2 min-4 min; and thinning the sapphire substrate to obtain a thinned epitaxial wafer so that light can enter from one side of the sapphire substrate, wherein the thickness of the aluminum nitride epitaxial layer is not greater than 300 nm.

[0014] In some exemplary embodiments, implanting silicon into a localized region of the aluminum nitride epitaxial layer includes: growing an insulating layer and coating a photoresist on one side surface of the thinned aluminum nitride epitaxial layer; performing a first photolithography to etch an ion implantation window on the aluminum nitride epitaxial layer; implanting Si atoms to a predetermined depth into the ion implantation window using an ion implantation process; and annealing at 1300℃±50℃ for 4-6 minutes under a nitrogen protective atmosphere, wherein the insulating layer material includes silicon dioxide.

[0015] In some exemplary embodiments, sputtering a first electrode at the projection location of the silicon element region on the aluminum nitride epitaxial layer includes: removing photoresist and silicon dioxide; coating a silicon dioxide insulating layer; etching an ohmic contact window in the silicon element region by a second photolithography; sputtering a titanium layer, an aluminum layer, a titanium layer, and a gold layer in the ohmic contact window; and annealing at a temperature of 900℃±50℃ for 25s-30s.

[0016] In some exemplary embodiments, sputtering a second electrode at the projection location of a non-silicon element region on an aluminum nitride epitaxial layer includes: etching a Schottky contact electrode window in the non-silicon element region on the aluminum nitride epitaxial layer using a third photolithography process; sequentially depositing a transparent nickel electrode layer and a gold layer on the Schottky contact electrode window using an electron beam evaporation process; annealing at 500°C ± 50°C for 4 min-6 min using a mixed gas of oxygen and nitrogen as a protective atmosphere; etching a metal electrode window on the transparent gold electrode using a fourth photolithography process; and sputtering a titanium layer, an aluminum layer, a titanium layer, and a gold layer on the metal electrode window.

[0017] (III) Beneficial Effects

[0018] As can be seen from the above technical solutions, the aluminum nitride vacuum detector and its preparation method provided by the embodiments of the present invention have at least the following beneficial effects:

[0019] (1) By ion implantation of high concentration of Si impurities, AlN and the electrode can achieve good ohmic contact; another electrode forms a Schottky contact with AlN, thus constructing a Schottky junction detector with a faster response than the MSM structure detector and without the need for a high bias voltage.

[0020] (2) The thickness of the aluminum nitride epitaxial layer does not exceed 300 nm. By setting a thin aluminum nitride layer, the electron-hole pairs generated by the absorption of photons are located in the Schottky junction region, which is easy to separate and generate photocurrent. At the same time, the thin aluminum nitride epitaxial layer allows the photogenerated carriers to be quickly collected by the metal electrode, achieving a fast response.

[0021] (3) By thinning the sapphire substrate, light can be irradiated from the back of the device, and the light can directly enter the absorption layer, avoiding the influence of wiring and electrodes on the light and reducing light loss. This is suitable for fabricating large-scale area array devices. Attached Figure Description

[0022] The above-described features, other objects, and advantages of the present invention will become clearer from the following description of embodiments of the invention with reference to the accompanying drawings, in which:

[0023] Figure 1 This schematic diagram illustrates the structure of a conventional MSM-based AlN vacuum detector.

[0024] Figure 2A schematic diagram illustrating the structure of an AlN vacuum detector according to an embodiment of the present invention is shown; and

[0025] Figure 3 The schematic diagram illustrates a process flow diagram of a method for fabricating an AlN vacuum detector according to an embodiment of the present invention. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0027] Figure 1 The schematic diagram illustrates the structure of a conventional MSM-based AlN vacuum detector.

[0028] like Figure 1 As shown, a traditional AlN vacuum detector with an MSM (Metal-Semiconductor Mixture) structure includes a sapphire substrate, an aluminum nitride buffer layer, an aluminum nitride epitaxial layer, and metal electrodes. When incident light passes through the portion between the electrodes and enters the aluminum nitride epitaxial layer, the photon energy is absorbed by the AlN, exciting electron-hole pairs. In the MSM structure, due to the Schottky barrier formed between the metal electrodes and AlN, electrons and holes move towards the electrodes under the influence of the electric field, forming a photocurrent. Thus, the AlN vacuum detector with an MSM structure can convert optical signals into electrical signals for output.

[0029] Traditional AlN vacuum detectors with MSM structures are greatly affected by surface states and suffer from severe parasitic photoconductivity, which limits their application and development in certain fields.

[0030] Figure 2 The schematic diagram illustrates the structure of an AlN vacuum detector according to an embodiment of the present invention.

[0031] like Figure 2 As shown, an AlN vacuum detector according to an embodiment of the present invention includes: a substrate, the substrate being made of sapphire substrate; an aluminum nitride epitaxial layer, the aluminum nitride epitaxial layer including a first surface and a second surface, the first surface being located on the substrate, wherein a local region of the aluminum nitride epitaxial layer contains silicon atoms, and the projection of the region containing silicon atoms onto the first surface and the second surface does not completely cover the first surface and the second surface; a first electrode located on the second surface and located in the projection region of the region containing silicon atoms on the second surface; and a second electrode located on the second surface and not located in the projection region of the region containing silicon atoms on the second surface.

[0032] In this embodiment of the invention, an ohmic contact is formed between the first electrode and the aluminum nitride epitaxial layer by ion implantation of a high concentration of Si impurities; and a Schottky contact is formed between the second electrode and the aluminum nitride epitaxial layer. This constructs a Schottky junction detector with a faster response than the MSM structure detector and without the need for a higher bias voltage.

[0033] In some exemplary embodiments, the first electrode includes a titanium layer, an aluminum layer, another titanium layer, and a gold layer sequentially disposed along a direction perpendicular to the second surface. Preferably, the thicknesses of each layer are 15 nm, 250 nm, 50 nm, and 150 nm, respectively.

[0034] In some exemplary embodiments, the second electrode includes a nickel layer and a gold layer with a first area disposed sequentially along a direction perpendicular to the second surface, preferably with thicknesses of 10 nm and 10 nm, respectively; and a titanium layer, an aluminum layer, another titanium layer, and a gold layer with a second area disposed sequentially on the gold layer along a direction perpendicular to the second surface, preferably with thicknesses of 15 nm, 250 nm, 50 nm, and 150 nm, respectively. The first area is larger than the second area.

[0035] Preferably, the thickness of the aluminum nitride epitaxial layer is no greater than 300 nm. The thin design of the aluminum nitride epitaxial layer allows the electron-hole pairs generated by the absorption of photons to be located within the Schottky junction region, facilitating their separation and generation of photocurrent. Simultaneously, the relatively thin aluminum nitride epitaxial layer enables the rapid collection of photogenerated carriers by the metal electrode, achieving a fast response.

[0036] Preferably, the thickness of the sapphire substrate is sufficient to allow light to enter from one side of the sapphire substrate. By thinning the sapphire substrate, light can be irradiated from the back of the device, allowing the light to directly enter the absorption layer. This avoids the influence of wiring and electrodes on the light, reduces light loss, and is suitable for fabricating large-scale area array devices.

[0037] Based on the AlN vacuum detector of claim 1, combined with Figure 3 introduce Figure 1 The method for fabricating the AlN vacuum detector is shown.

[0038] Figure 3 The schematic diagram illustrates a process flow diagram of a method for fabricating an AlN vacuum detector according to an embodiment of the present invention.

[0039] like Figure 3 As shown, a method for fabricating an AlN vacuum detector according to an embodiment of the present invention includes steps S110-S150.

[0040] In step S110, a sapphire substrate is prepared.

[0041] In step S120, an aluminum nitride epitaxial layer is grown on a sapphire substrate.

[0042] For example, using a metal-organic chemical vapor deposition (MOCVD) apparatus, with trimethylaluminum (TMAl) as the aluminum source and ammonia (NH3) as the nitrogen source, an aluminum nitride epitaxial layer is grown on a sapphire substrate; the epitaxial wafer with the grown epitaxial layer is annealed at 900℃±50℃ for 2min-4min; and the sapphire substrate is thinned to obtain a thinned epitaxial wafer so that light can enter from one side of the sapphire substrate, wherein the thickness of the aluminum nitride epitaxial layer is no greater than 300nm.

[0043] In this embodiment of the invention, by thinning the sapphire substrate, light can be irradiated from the back of the device, and the light can directly enter the absorption layer, avoiding the influence of wiring and electrodes on the light and reducing light loss. This method is suitable for fabricating large-scale area array devices.

[0044] In step S130, silicon is implanted into a localized region of the aluminum nitride epitaxial layer.

[0045] For example, an insulating layer is grown and photoresist is coated on one side of the aluminum nitride epitaxial layer of the thinned epitaxial wafer; a first photolithography is performed to etch an ion implantation window on the aluminum nitride epitaxial layer; Si atoms are implanted into the ion implantation window to a predetermined depth using an ion implantation process; and annealing is performed at 1300℃±50℃ for 4min-6min with nitrogen as the protective atmosphere, wherein the insulating layer material includes silicon dioxide.

[0046] In this embodiment of the invention, high-concentration Si impurities are implanted by ion implantation to achieve good ohmic contact between AlN and the electrode; another electrode forms a Schottky contact with AlN, thus constructing a Schottky junction detector that has a faster response than the MSM structure detector and does not require a high bias voltage.

[0047] In step S140, the first electrode is sputtered at the projection position of the silicon element region on the aluminum nitride epitaxial layer.

[0048] For example, the photoresist and silicon dioxide used in step S130 are removed; an insulating layer of silicon dioxide is coated and an ohmic contact window is etched in the silicon element region by a second photolithography; a titanium layer, an aluminum layer, a titanium layer and a gold layer are sputtered in the ohmic contact window; and the process is annealed at a temperature of 900℃±50℃ for 25s-30s.

[0049] In step S150, a second electrode is sputtered at the projection position of the non-silicon element region on the aluminum nitride epitaxial layer to obtain an aluminum nitride vacuum detector.

[0050] For example, a Schottky contact electrode window is etched in the non-silicon region of the aluminum nitride epitaxial layer using a third photolithography process; a transparent nickel electrode layer and a gold layer are sequentially deposited on the Schottky contact electrode window using an electron beam evaporation process; annealing is performed at 500℃±50℃ for 4-6 minutes using a mixture of oxygen and nitrogen as a protective atmosphere; a metal electrode window is etched on the transparent gold electrode using a fourth photolithography process; and a titanium layer, an aluminum layer, a titanium layer, and a gold layer are sputtered on the metal electrode window.

[0051] Example 1: A method for fabricating a back-illuminated AlN vacuum detector with good ohmic contact.

[0052] (1) Epitaxial wafer preparation: Using an MOCVD equipment, a 300 nm thick AlN epitaxial layer was grown on a sapphire substrate using TMAl and NH3 as Al and N precursors, respectively. The epitaxial wafer was annealed in a high-temperature annealing furnace at 900 °C for 3 min. The sapphire substrate of the epitaxial wafer was also thinned.

[0053] (2) Process preparation: After cleaning the epitaxial wafer, an insulating layer is grown and photoresist is coated. The ion implantation window is etched by the first photolithography. High concentration of Si atoms about 40 nm deep are implanted into the window using the ion implantation process, and the wafer is annealed at 1300 °C for 5 min under N2 as a protective atmosphere.

[0054] (3) Remove the photoresist and insulating layer from step (2), re-cover with SiO2 insulating layer, and etch ohmic contact windows in the silicon-containing region by a second photolithography. Sputter titanium layer, aluminum layer, titanium layer and gold layer (Ti / Al / Ti / Au) with thicknesses of 15nm, 250nm, 50nm and 150nm respectively. Perform distribution annealing with N2 as protective atmosphere. One-step annealing, annealing temperature 530℃ and annealing time 300s, two-step annealing, annealing temperature 900℃ and annealing time 30s.

[0055] (4) Schottky contact electrode windows were etched in the silicon-free region using a third photolithography process. Transparent electrodes Ni and Au were deposited sequentially using electron beam evaporation, each with a thickness of 10 nm. The electrodes were annealed at 500 °C for 5 min in a mixed atmosphere of O2 and N2. Metal electrode windows were etched on the transparent electrode Au using four photolithography processes. Ti / Al / Ti / Au were then sputtered onto the metal electrode windows with thicknesses of 15 nm, 250 nm, 50 nm, and 150 nm, respectively.

[0056] The above specific embodiments further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An aluminum nitride vacuum detector, characterized by, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

2. The aluminum nitride vacuum detector of claim 1, wherein, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

3. The aluminum nitride vacuum detector of claim 1, wherein, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

4. The aluminum nitride vacuum detector of claim 1, wherein, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

5. The aluminum nitride vacuum detector of claim 1, wherein, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

6. A method of making an aluminum nitride vacuum detector, characterized by, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

7. The preparation method according to claim 6, characterized in that, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

8. The preparation method according to claim 7, characterized in that, The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector. The application relates to a vacuum detector, and discloses a method for manufacturing the vacuum detector.

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10. The method of claim 9, wherein, The sputtering of the second electrode on the non-silicon element region on the aluminum nitride epitaxial layer includes: Through a third photoetching, a Schottky contact electrode window is etched on the non-silicon element region on the aluminum nitride epitaxial layer; Through an electron beam evaporation process, a transparent electrode nickel layer and a gold layer are sequentially evaporated on the Schottky contact electrode window; annealing at 500℃±50℃ for 4min-6min in a mixed gas of oxygen and nitrogen as a protective atmosphere; Through a fourth photoetching, a metal electrode window is etched on the gold layer transparent electrode; and A titanium layer, an aluminum layer, a titanium layer, and a gold layer are sputtered on the metal electrode window.

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