Multi-dimensional perovskite solar cell with wide processing window and preparation method thereof

Abstract

The invention relates to the technical field of solar cells, and discloses a multi-dimensional perovskite solar cell with a wide processing window and a preparation method of the multi-dimensional perovskite solar cell. The internal structure of the multidimensional perovskite solar cell sequentially comprises a transparent conductive electrode layer, a hole transport layer, a 1D / 3D perovskite light absorption layer containing hydrophobic groups or waterproof materials, an electron transport layer and a metal electrode layer from bottom to top. According to the method, the 1D perovskite is added into the standard 3D perovskite as the seed crystal, so that the preferred orientation of the 3D perovskite is effectively promoted, specific annealing temperature and time are not needed, a processing window for forming the alpha-perovskite with optical activity is expanded, and the conversion efficiency of the perovskite solar cell module is effectively improved. And meanwhile, due to the hydrophobic characteristic of the 1D perovskite, erosion of moisture in air to the perovskite can be effectively avoided, so that the stability of the device is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly to a multi-dimensional perovskite solar cell with a wide processing window and a preparation method thereof. Background Art

[0002] In recent years, in order to solve the increasingly severe energy and environmental problems, people have turned their attention to the development and utilization of new energy. Solar energy, as a clean energy, is considered to be the best way to solve the energy problem in the future, and photovoltaic cells that convert solar energy into electrical energy are the most urgently needed energy technologies at present. Perovskite solar cells have become a research hotspot in the global solar cell field in recent years due to their significant advantages such as low manufacturing cost and high efficiency.

[0003] For example, the patent document with the publication number CN117560937A discloses "a perovskite solar cell based on a 3-methoxyphenethylamine passivator and a preparation method thereof". This perovskite solar cell uses 3-methoxyphenethylamine as a surface passivator. After passivation with 3-methoxyphenethylamine, the density of defect states at the upper interface of the perovskite can be effectively reduced, solving the problem of low photoelectric conversion efficiency and poor stability of existing perovskite solar cells due to the existence of uncoordinated Pb 2+ resulting in low photoelectric conversion efficiency and poor stability. The perovskite solar cell is, from bottom to top, in the order of: FTO glass as a conductive cathode, tin oxide deposited by chemical bath on the FTO layer as an electron transport layer, a perovskite layer spin-coated in one step, 3-methoxyphenethylamine spin-coated on the perovskite layer as a passivation layer, spiro-OMeTAD spin-coated as a hole transport layer, and a metal anode deposited by vacuum thermal evaporation.

[0004] The patent document with the publication number CN118870929A discloses "a preparation method of a perovskite solar cell". This method successively forms a hole transport layer, a lower interface passivation layer, a perovskite light-absorbing layer, an upper interface passivation layer, an electron transport layer, an electron buffer layer, and a metal electrode layer on the surface of a conductive glass substrate. The invention synergistically passivates the upper interface of the perovskite solar cell with a passivator, phenethylammonium iodide, and a methylamine ethanol solution. By inducing grain boundary migration and the regrowth of perovskite grains by MA, and at the same time promoting the penetration of the passivation molecule, phenethylamine, into the buried bottom interface for deep passivation to reduce non-radiative recombination centers. Moreover, the production cost is low and the operation is simple, which is more conducive to actual production and provides an important reference for the industrialization of perovskite solar cells.

[0005] The patent document with the announcement number CN110518128B discloses "an ACI-type two-dimensional perovskite solar cell and a preparation method thereof". The perovskite absorption layer of this solar cell is C(NH 2 ) 3 I, CH 3 NH 3A mixture of I and PbI 2 During the preparation process, CH 3 NH 3 Cl was added as an additive. Compared with previous two-dimensional perovskite devices, the addition of CH 3 NH 3 Cl additive greatly improved the crystallization quality of the perovskite film, increased the grain size, reduced the carrier recombination loss caused by defects at grain boundaries, increased the carrier lifetime, and at the same time increased the effective gradient distribution of different n values, improving the charge transport efficiency. Ultimately, it directly determined the improvement of the photoelectric conversion efficiency of the perovskite solar cell device, improved the series and parallel resistances of the device, and finally obtained a photoelectric conversion efficiency of 18.48%. Its excellent optoelectronic properties and device efficiency will contribute to the commercial application of perovskite solar cells.

[0006] As is well known, perovskite materials are easily decomposed by moisture and oxygen. Therefore, balancing the high efficiency and stability of perovskite solar cells has always been a major issue in this field. The main structure of perovskite in the prior art is mainly 3D perovskite. In recent years, traditional 3D perovskite has achieved continuous breakthroughs in power conversion efficiency (PCE). However, its processing window is small, and different thermal annealing temperatures and times may lead to different optical phases of perovskite, resulting in reduced efficiency and stability of the device. Mixed-dimensional 2D / 3D perovskite has good stability. However, due to the poor charge conductivity, wider bandgap, and stronger exciton binding of 2D perovskite, it hinders the transport of carriers, resulting in a lower power conversion efficiency of 2D / 3D perovskite. Summary of the Invention

[0007] The object of the present invention is to provide a multi-dimensional perovskite solar cell with a wide processing window and its preparation method. By adding a 1D perovskite layer as a seed crystal to the traditional 3D perovskite solution, the crystallization orientation of 3D perovskite can be induced, effectively improving the component conversion efficiency. At the same time, the hydrophobicity of 1D perovskite can effectively avoid the erosion of perovskite by water, taking into account the stability of the component. To achieve the above object, the present invention provides the following technical solutions:

[0008] The present invention provides a multi-dimensional perovskite solar cell with a wide processing window. The internal structure of the multi-dimensional perovskite solar cell includes, from bottom to top in sequence: a transparent conductive electrode layer, a hole transport layer, a 1D / 3D perovskite light-absorbing layer containing a hydrophobic group or a waterproof material, an electron transport layer, and a metal electrode layer.

[0009] Further, the transparent conductive electrode layer is one of ITO, FTO, or AZO.

[0010] Further, the hole transport layer is NiO x 、CuGaO 3, CuAlO 2 , VO 2 or Cu x O, or one or more of them.

[0011] Furthermore, the 1D / 3D perovskite light-absorbing layer is obtained by spin-coating 1D / 3D perovskite nanoparticles on the hole transport layer; specifically, first, a hydrophobic group R or a waterproof material and PbX 2 combine to form 1D perovskite RPbX 3 , then the 1D perovskite RPbX 3 is dispersed in the 3D perovskite precursor solution, and the 1D perovskite RPbX 3 wraps the 3D perovskite crystal to form 1D / 3D perovskite nanoparticles; among them,

[0012] the waterproof material is one of tributylmethylphosphonium iodide, tributylethylphosphonium bromide, tetrabutylphosphonium iodide, or tetrabutylphosphonium bromide;

[0013] the 3D perovskite is one of FAPbX 3 , CsPbX 3 , CsFAPbX 3 , MAFAPbX 3 , CsFAMAPbX 3 , CsPbX 3-x X’ x , CsFAPbX 3-x X’ x , MAFAPbX 3-x X’ x or CsFAMAPbX 3-x X’ x ;

[0014] In the formula, both X and X’ represent halogen elements.

[0015] Furthermore, the electron transport layer is an inorganic material or an organic material; among them,

[0016] the inorganic material is one of SnO, ZnO, TiO 2 , ZnS, CdS, In 2 S 3 , MoS 2 or SnS 2 ;

[0017] the organic material is one of PDI, NDI, PDIN, or PDINO.

[0018] Furthermore, the metal electrode layer is one of Au, Ag, Cu, or Al.

[0019] The present invention also provides a method for preparing a multi-dimensional perovskite solar cell with a wide processing window, and the method comprises the following steps:

[0020] Step S1, pretreatment of the transparent conductive electrode layer: ultrasonically clean the transparent conductive electrode layer successively with deionized water, isopropanol, and acetone, then dry the transparent conductive electrode layer with nitrogen, and perform UV-Ozone treatment for 10 - 30 min;

[0021] Step S2, preparation of the hole transport layer: prepare a hole transport layer on the pretreated transparent conductive electrode layer to obtain a transparent conductive electrode layer / hole transport layer sample;

[0022] Step S3, preparation of the 1D / 3D perovskite light-absorbing layer: prepare a 1D / 3D perovskite light-absorbing layer containing a hydrophobic group or a waterproof material on the hole transport layer by spin coating, and anneal to obtain a transparent conductive electrode layer / hole transport layer / 1D / 3D perovskite light-absorbing layer sample;

[0023] Step S4, preparation of the electron transport layer: prepare an electron transport layer on the 1D / 3D perovskite light-absorbing layer;

[0024] Step S5, preparation of the metal electrode layer: deposit a metal material on the electron transport layer to obtain the target product.

[0025] Further, the preparation method of the hole transport layer is one or more of PVD, ALD, CVD, screen printing, and solution method, and its thickness is 10 - 50 nm.

[0026] Further, the annealing conditions include: the temperature is 70 - 180 °C, and the time is 10 - 60 min.

[0027] Further, the preparation method of the electron transport layer is one or more of PVD, ALD, CVD, screen printing, and solution method, and its thickness is 10 - 100 nm.

[0028] Further, the thickness of the metal electrode layer is 50 - 200 nm.

[0029] Technical effects and advantages of the present invention:

[0030] First, in the present invention, 1D perovskite is added to the traditional 3D perovskite as a seed to assist crystallization. Among them, the 1D perovskite is formed by combining some hydrophobic groups (R) or waterproof materials and PbX 2 to form 1D perovskite RPbX 3 , and then the 1D perovskite RPbX 3 is dispersed in the 3D perovskite precursor solution, and the 3D perovskite crystals FAPbX’ are wrapped by these 1D perovskite RPbX 3 3, finally, a new structure of 1D / 3D perovskite with high stability and high power conversion efficiency is formed and applied in perovskite solar cells.

[0031] Second, compared with traditional 3D perovskites, adding 1D perovskite as seeds in standard 3D perovskites effectively promotes the preferred orientation of 3D perovskites. Without specific annealing temperature and time, it expands the processing window for forming optically active α-perovskite and effectively improves the conversion efficiency of perovskite solar cell modules. At the same time, due to the hydrophobic characteristics of 1D perovskite, it can effectively avoid the erosion of perovskite by moisture in the air, thus improving the stability of the device.

[0032] Other features and advantages of the present invention will be described in the following specification, and, in part, will be obvious from the specification, or will be understood by implementing the present invention. The objectives and other advantages of the present invention can be realized and obtained by the structure pointed out in the specification and the drawings. Description of the Drawings

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0034] Figure 1 Structural diagram of a multi-dimensional perovskite solar cell with a wide processing window provided by the present invention;

[0035] Figure 2 Structural diagram of 1D perovskite provided by the present invention;

[0036] Figure 3 Flowchart of the preparation method of a multi-dimensional perovskite solar cell with a wide processing window provided by the present invention;

[0037] Figure 4 Comparison chart of the conversion efficiency of 1D / 3D perovskite and standard 3D perovskite solar cells prepared in Example 1 of the present invention;

[0038] Figure 5 Comparison chart of the aging experiment of 1D / 3D perovskite and standard 3D perovskite solar cells prepared in Example 1 of the present invention;

[0039] Description of the Drawings: 1. Transparent conductive electrode layer; 2. Hole transport layer; 3. 1D / 3D perovskite light absorption layer; 4. Electron transport layer; 5. Metal electrode layer. Detailed Description of the Invention

[0040] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0041] The flowcharts shown in the accompanying drawings are only illustrative and do not necessarily include all the steps. For example, some steps can be decomposed, while some steps can be combined or partially combined. Therefore, the actual execution order may be changed according to the actual situation.

[0042] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned accompanying drawings are used to distinguish similar objects and do not necessarily need to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances so that the embodiments of this application described here can be implemented in an order other than those illustrated or described here.

[0043] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or sub-modules does not necessarily have to be limited to those steps or sub-modules clearly listed, but may include other steps or sub-modules that are not clearly listed or are inherent to these processes, methods, products or devices.

[0044] To solve the deficiencies of the prior art, the present invention discloses a multi-dimensional perovskite solar cell with a wide processing window. Figure 1 The structural diagram of the multi-dimensional perovskite solar cell provided by the present invention is as Figure 1 shown. The internal structure of the multi-dimensional perovskite solar cell sequentially includes from bottom to top: a transparent conductive electrode layer 1, a hole transport layer 2, a 1D / 3D perovskite light absorption layer 3 containing a hydrophobic group or a waterproof material, an electron transport layer 4, and a metal electrode layer 5; where

[0045] The transparent conductive electrode layer 1 includes, but is not limited to, one of materials such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), etc.

[0046] The hole transport layer 2 includes, but is not limited to, NiO x (nickel oxide), CuAlO 2 (copper meta-aluminate), VO 2 (vanadium oxide), Cu x O (copper oxide) materials, one or more of them;

[0047] The 1D / 3D perovskite light-absorbing layer is obtained by spin-coating 1D / 3D perovskite nanoparticles on the hole transport layer; specifically, first, a hydrophobic group R or a waterproof material and PbX 2 combine to form a 1D perovskite RPbX 3 , and then the 1D perovskite is dispersed in a 3D perovskite precursor solution, and the 1D perovskite RPbX 3 wraps the 3D perovskite crystal to form 1D / 3D perovskite nanoparticles; among them,

[0048] the 3D perovskite includes but is not limited to FAPbI 3 , CsPbI 3 , CsFAPbI 3 , MAFAPbI 3 , CsFAMAPbI 3 , CsPbI 3-x Br x , CsFAPbI 3-x Br x , MAFAPbI 3-x Br x , CsFAMAPbI 3-x Br x and other materials.

[0049] In the 1D perovskite, the waterproof material is exemplified by tributylmethylphosphonium iodide, and other halide materials that can react with PbX 2 to form RPbX 2 are also acceptable. These materials include but are not limited to one of tributylethylphosphonium bromide, tetrabutylphosphonium iodide, tetrabutylphosphonium bromide, etc.

[0050] The electron transport layer 4 can be an inorganic material or an organic material; among them, the inorganic materials include but are not limited to: SnO (stannous oxide), ZnO (zinc oxide), TiO 2 (titanium oxide ) , ZnS (zinc sulfide), CdS (cadmium sulfide), In 2 S 3 (indium sulfide), MoS 2 (molybdenum disulfide), SnS 2One of (tin sulfide), etc., and the organic materials include but are not limited to: one of PDI (perylene diimide), NDI (naphthalene tetracarboxylic diimide), PDIN (N,N'-bis[3-(dimethylamino)propyl]perylene-3,4,9,10-tetracarboxylic diimide), PDINO (3,3'-(1,3,8,10-tetraanthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-2,9(1H,3H,8H,10H)-diyl)bis(N,N-dimethylpropane-1-amine oxide)), etc.

[0051] The metal electrode layer 5 includes but is not limited to: one of materials such as Au (gold), Ag (silver), Cu (copper), Al (aluminum), etc.

[0052] The present invention also discloses a preparation method of a multi-dimensional perovskite solar cell with a wide processing window. Figure 3 It is a flowchart of the preparation method of the multi-dimensional perovskite solar cell with a wide processing window provided by the present invention. As Figure 3 shown, the method includes the following steps:

[0053] Step S1, pretreatment of the transparent conductive electrode layer 1: The transparent conductive electrode layer 1 is ultrasonically cleaned successively with deionized water, isopropyl alcohol, and acetone, and then the transparent conductive electrode layer 1 is dried with nitrogen, and UV-Ozone (ultraviolet-ozone) treatment is carried out for 10 - 30 min.

[0054] Step S2, preparation of the hole transport layer 2: The hole transport layer 2 is prepared on the pretreated transparent conductive electrode layer 1 to obtain a transparent conductive electrode layer / hole transport layer sample; the preparation method of the hole transport layer 2 is one or more of PVD (physical vapor deposition), ALD (atomic layer deposition), CVD (chemical vapor deposition), screen printing, and solution method, and its thickness is 10 - 50 nm.

[0055] Step S3, preparation of the 1D / 3D perovskite light-absorbing layer 3: A 1D / 3D perovskite light-absorbing layer 3 containing a hydrophobic group or a waterproof material is prepared on the hole transport layer 2 by spin coating, and annealing is carried out to obtain a transparent conductive electrode layer / hole transport layer / 1D / 3D perovskite light-absorbing layer sample; the conditions of the annealing include: the annealing temperature is 70 - 180 °C, and the time is 10 - 60 min.

[0056] Step S4, preparation of the electron transport layer 4: The electron transport layer 4 is prepared on the 1D / 3D perovskite light-absorbing layer 3; the preparation method of the electron transport layer 4 is one or more of PVD (physical vapor deposition), ALD (atomic layer deposition), CVD (chemical vapor deposition), screen printing, and solution method, and its thickness is 10 - 100 nm.

[0057] Step S5, Preparation of Metal Electrode Layer 5: Depositing materials such as Au, Ag, Cu, Al, etc. on the electron transport layer 4 with a thickness of 50 - 200 nm to obtain the target product.

[0058] It should be noted that the inverted (p-i-n) perovskite solar cell structure is adopted in the above specific scheme, and the method of the present invention is still applicable to the normal (n-i-p) perovskite solar cell.

[0059] The following further illustrates the solution of the present application with specific embodiments.

[0060] Example 1:

[0061] Embodiment 1 of the present invention provides a preparation method of a multi-dimensional perovskite solar cell with a wide processing window, and the method includes the following steps:

[0062] Step S1, Pretreatment of Transparent Conductive Electrode Layer 1: Ultrasonically cleaning the ITO (indium tin oxide) substrate with deionized water, isopropyl alcohol, and acetone for 15 minutes each, then drying the ITO substrate with nitrogen and subjecting it to UV treatment for 30 minutes.

[0063] Step S2, The hole transport layer 2 is prepared by a solution method, which specifically includes the following steps:

[0064] Step S21, Preparation of NiO x Solution Preparation: Dissolve 9 g of nickel(II) nitrate hexahydrate in 120 mL of water and stir at room temperature to obtain a clear green solution. Then add 1 M sodium hydroxide solution until the pH value reaches 10. After stirring for 10 minutes, centrifuge to collect the green precipitate, and wash it 3 times with deionized water and ethanol respectively. Dry the green powder at 80 °C for 12 hours, and then calcine it at 275 °C for 2 hours. Finally, obtain a dark gray powder. Take 20 mg of this powder and dissolve it in 1 mL of ethanol to obtain a 20 mg / mL NiO x solution.

[0065] Step S22, Preparation of HTL Layer (Hole Transport Layer): Filter the 20 mg / mL NiO x solution with a PVDF (polyvinylidene fluoride) filter, and then spin-coat it on the cleaned ITO at a rate of 3000 rpm for 30 s, followed by annealing at 250 °C for 60 minutes to obtain the HTL layer.

[0066] Step S3, Preparation of 1D / 3D Perovskite Light Absorbing Layer 3, which specifically includes the following steps:

[0067] Step S31, Preparation of 1D perovskite layer: Mix 521 mg of FAAc (formamidinium acetate), 344 mg of tributylmethylphosphonium iodide, and 20 mL of OL (oleic acid), and heat to 150 °C until completely dissolved to obtain a FA / TP-OL solution. Add 433 mg of PbI 2 to a mixed solution of 2.5 mL of oleylamine, 2.5 mL of OL, and 25 mL of 1-octadecene, and heat to 150 °C until completely dissolved to obtain a PbI 2 solution. Heat 6 mL of the PbI 2 solution to 120 °C, add 2.5 mL of the FA / TP-OL solution preheated to 120 °C under stirring at a speed of 1000 rpm, react for 30 s, and then cool in ice water to stop the reaction. Add 14 mL of acetone to precipitate the synthesized perovskite to form a colloid, centrifuge at a speed of 8000 rpm for 10 min, precipitate, filter, and obtain 1D perovskite.

[0068] Step S32, Preparation of 3D perovskite solution: Dissolve 18 mg of CsI (cesium iodide), 26.7 mg of MABr (methylammonium bromide), 199.8 mg of FAI (formamidinium iodide), 580.9 mg of PbI 2 (lead iodide), and 87.4 mg of PbBr 2 (lead bromide) in 1 mL of a mixed solvent of DMF (N,N-dimethylformamide):DMSO (dimethyl sulfoxide) = 4:1 to obtain a 3D perovskite precursor solution.

[0069] Step S33, Preparation of 1D / 3D perovskite light-absorbing layer 3: Disperse 1D perovskite in a 3D perovskite precursor solution with a concentration of 20 mg / mL to obtain a 1D / 3D mixed perovskite solution. Prepare a perovskite light-absorbing layer on the hole transport layer 2 by spin coating, and add an anti-solvent CB (chlorobenzene) during the spin coating process, and anneal at 120 °C for 30 min to obtain the 1D / 3D perovskite light-absorbing layer 3.

[0070] Step S4, Preparation of ETL layer (electron transport layer 4): Drop 30 μL of a CB solution of 20 mg / mL of PC 61 BM (fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester) on the 1D / 3D perovskite light-absorbing layer 3, spin coat at a speed of 2000 rpm for 30 s, and drop 70 μL of an IPA (isopropyl alcohol) solution containing 0.5 mg / mL of BCP (bathocuproine) on the PC 61 BM layer, spin coat at a speed of 5000 rpm for 30 s to obtain the ETL layer.

[0071] Step S5, Preparation of metal electrode layer 5: Deposit electrode Au on the electron transport layer 4 with a thickness of 60 nm.

[0072] Example 2:

[0073] Example 2 of the present invention provides a method for preparing a multi-dimensional perovskite solar cell with a wide processing window, and the method includes the following steps:

[0074] Step S1, pretreatment of the transparent conductive electrode layer 1: The ITO substrate is ultrasonically cleaned with deionized water, isopropanol, and acetone in sequence for 15 minutes each, and then the ITO substrate is dried with nitrogen and UV-treated for 30 minutes.

[0075] Step S2, preparation of the hole transport layer 2, specifically including the following steps:

[0076] Step S21, NiO x Solution preparation: Dissolve 9 g of nickel(II) nitrate hexahydrate in 120 mL of water and stir at room temperature to obtain a clear green solution. Then add 1 M sodium hydroxide solution until the pH value is 10. After stirring for 10 minutes, centrifuge to collect the green precipitate, and wash it 3 times with deionized water and ethanol respectively. Dry the green powder at 80 °C for 12 hours, and then calcine it at 275 °C for 2 hours. Finally, a dark gray powder is obtained. Take 20 mg of this powder and dissolve it in 1 mL of ethanol to obtain a 20 mg / mL NiO x solution.

[0077] Step S22, preparation of the HTL layer: After filtering the 20 mg / mL NiO x solution with a PVDF (polyvinylidene fluoride) filter, spin-coat it on the cleaned ITO at a rate of 3000 rpm for 30 s, and then anneal it at 250 °C for 60 minutes to obtain the HTL layer.

[0078] Step S3, preparation of the 1D / 3D perovskite light-absorbing layer 3, specifically including the following steps:

[0079] Step S31, preparation of 1D perovskite: Mix 521 mg of formamidinium acetate, 311 mg of tributylethylphosphonium bromide, and 20 mL of oleic acid, and heat it to 150 °C until completely dissolved to obtain the FA / EP-OL solution. Add 433 mg of PbI 2 to a mixed solution of 2.5 mL of oleylamine, 2.5 mL of oleic acid, and 25 mL of 1-octadecene, and heat it to 150 °C until completely dissolved to obtain the PbI 2 solution. Heat 6 mL of the PbI 2 solution to 120 °C, and add 2.5 mL of the FA / EP-OL solution preheated to 120 °C while stirring at a speed of 1000 rpm. React for 30 s, and then cool it in ice water to stop the reaction. Add 14 mL of acetone to precipitate the synthesized perovskite to form a colloid, centrifuge it at a speed of 8000 rpm for 10 minutes, precipitate, and filter to obtain 1D perovskite.

[0080] Step S32, Preparation of 3D perovskite solution: Dissolve 18 mg of CsI, 26.7 mg of MABr, 199.8 mg of FAI, 580.9 mg of PbI 2 , 87.4 mg of PbBr 2 in 1 mL of a mixed solvent of DMF:DMSO = 4:1 to obtain a perovskite precursor solution.

[0081] Step S33, Preparation of 1D / 3D perovskite light-absorbing layer 3: Disperse 1D perovskite in a 3D perovskite precursor solution with a concentration of 20 mg / mL to obtain a 1D / 3D mixed perovskite solution. Prepare the perovskite light-absorbing layer on the hole transport layer 2 by spin coating. During the spin coating process, add the antisolvent CB, and anneal at 120 °C for 30 min to obtain the 1D / 3D perovskite light-absorbing layer 3.

[0082] Step S4, Preparation of electron transport layer 4: Drop 30 μL of a CB solution of 20 mg / mL of PC 61 BM on the perovskite light-absorbing layer 3, spin coat at a speed of 2000 rpm for 30 s, and drop 70 μL of an IPA solution of 0.5 mg / mL of BCP on the PC 61 BM layer, spin coat at a speed of 5000 rpm for 30 s to obtain the ETL layer.

[0083] Step S5, Preparation of metal electrode layer 5: Deposit the electrode Au with a thickness of 60 nm.

[0084] Example 3:

[0085] Example 3 of the present invention provides a method for preparing a multi-dimensional perovskite solar cell with a wide processing window, and the method includes the following steps:

[0086] Step S1, Pretreatment of the transparent conductive electrode layer 1: Ultrasonically clean the ITO substrate with deionized water, isopropyl alcohol, and acetone for 15 min each, then dry the ITO substrate with nitrogen, and perform UV treatment for 30 min.

[0087] Step S2, Preparation of the hole transport layer 2, which specifically includes the following steps:

[0088] Step S21, Preparation of NiOx solution: Dissolve 9 g of nickel(II) nitrate hexahydrate in 120 mL of water and stir at room temperature to obtain a clear green solution. Then add 1 M sodium hydroxide solution until the pH value is 10. After stirring for 10 min, centrifuge to collect the green precipitate, and wash it 3 times with deionized water and ethanol respectively. Dry the green powder at 80 °C for 12 h, and then calcine it at 275 °C for 2 h. Finally, obtain a dark gray powder. Take 20 mg of this powder and dissolve it in 1 mL of ethanol to obtain 20 mg / mL of NiOx Solution.

[0089] Step S22, Preparation of HTL layer: After filtering the 20 mg / mL NiO x solution with a PVDF filter, spin-coat it on the cleaned ITO at a rate of 3000 rpm for 30 s, and then anneal it at 250 °C for 60 min to obtain the HTL layer.

[0090] Step S3, Preparation of 1D / 3D perovskite light-absorbing layer, which specifically includes the following steps:

[0091] Step S31, Preparation of 1D perovskite: Add 137.7 mg of TPI and 1.659 g of PbI 2 to 8 mL of 47% HI (hydroiodic acid) aqueous solution, heat it to 110 °C to completely dissolve it, put it in ice water to cool and crystallize, precipitate, filter, and freeze-dry it at -60 °C for 12 h to obtain PbI 2 -TPI nanocrystals. Disperse the PbI 2 -TPI nanocrystals in 1 mL of 1 M FAI solution, and add 1 mL of toluene solution thereto, filter and dry to obtain 1D perovskite.

[0092] Step S32, Preparation of 3D perovskite solution: Dissolve 18 mg of CsI, 26.7 mg of MABr, 199.8 mg of FAI, 580.9 mg of PbI 2 , 87.4 mg of PbBr 2 in 1 mL of a mixed solvent of DMF:DMSO = 4:1 to obtain a perovskite precursor solution.

[0093] Step S33, Preparation of 1D / 3D perovskite light-absorbing layer 3: Disperse the 1D perovskite in the 3D perovskite precursor at a concentration of 20 mg / mL to obtain a 1D / 3D mixed perovskite solution. Prepare the perovskite light-absorbing layer on the hole transport layer 2 by spin-coating, and add the antisolvent CB during the spin-coating process, and anneal it at 120 °C for 30 min to obtain the 1D / 3D perovskite light-absorbing layer 3.

[0094] Step S4, Preparation of electron transport layer 4: Drop 30 μL of 20 mg / mL PC 61 BM CB solution on the perovskite layer, spin-coat it at a speed of 2000 rpm for 30 s, and drop 70 μL of 0.5 mg / ml BCP IPA solution on the PC 61 BM layer, spin-coat it at a speed of 5000 rpm for 30 s to obtain the ETL layer.

[0095] Step S5, Preparation of metal electrode layer 5: Deposit the electrode Au on the electron transport layer 4 with a thickness of 60 nm.

[0096] Figure 4 Comparison chart of the conversion efficiency of the 1D / 3D perovskite and standard 3D perovskite solar cells prepared in Example 1 of the present invention. As Figure 4 shown, in the present invention, 1D perovskite is added as a seed crystal to the standard 3D perovskite, which effectively promotes the preferred orientation of the 3D perovskite. Without specific annealing temperature and time, the processing window for forming optically active α-perovskite is expanded, effectively improving the conversion efficiency of the perovskite solar cell module. At the same time, due to the hydrophobic property of the 1D perovskite, the erosion of the perovskite by moisture in the air can be effectively avoided, thereby improving the stability of the device.

[0097] Figure 5 Comparison chart of the aging experiments of the 1D / 3D perovskite and standard 3D perovskite solar cells prepared in Example 1 of the present invention. As Figure 5 shown, the 1D perovskite in the present invention is nanoparticles formed by RPbI 3 coating FAPbI 3 . The R group adopts some larger alkyl groups. On the one hand, doping these larger groups is beneficial to the mechanical stability of the perovskite crystal; on the other hand, these groups have good hydrophobic properties, which is beneficial to enhancing the thermal stability of the perovskite module. In the present invention, an aging experiment was carried out on the 1D / 3D perovskite and standard perovskite encapsulated at 85 °C, 85% RH, and 1 standard sunlight illumination conditions for 2000 h. The PCE of the 1D / 3D perovskite finally decayed by 7%, while the PCE of the standard 3D perovskite finally decayed by 36%.

[0098] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A multidimensional perovskite solar cell with a wide processing window, characterized in that: The internal structure of the multidimensional perovskite solar cell comprises, from bottom to top, a transparent conductive electrode layer (1), a hole transport layer (2), a 1D / 3D perovskite light absorption layer (3) containing hydrophobic groups or waterproof materials, an electron transport layer (4) and a metal electrode layer (5).

2. The multidimensional perovskite solar cell with a wide processing window according to claim 1, characterized in that The transparent conductive electrode layer (1) is one of ITO, FTO or AZO.

3. The multidimensional perovskite solar cell with a wide processing window according to claim 1, characterized in that: The hole transport layer (2) is NiO x , CuGaO3, CuAlO2, VO2 or Cu x One or more of O.

4. The multidimensional perovskite solar cell with a wide processing window according to claim 2, characterized in that: The 1D / 3D perovskite light absorbing layer (3) is obtained by spin coating 1D / 3D perovskite nanoparticles on the hole transport layer (2) by spin coating; specifically, a hydrophobic group R or a waterproof material is first combined with PbX2 to form a 1D perovskite RPbX3, and then the 1D perovskite RPbX3 is dispersed in a 3D perovskite precursor solution, and the 1D perovskite RPbX3 wraps the 3D perovskite crystals to form 1D / 3D perovskite nanoparticles; wherein, The waterproof material is one of tributyl methyl phosphine iodide, tributyl ethyl phosphine bromide, tetrabutyl phosphine iodide or tetrabutyl phosphine bromide; The 3D perovskite is FAPbX3, CsPbX3, CsFAPbX3, MAFAPbX3, CsFAMAPbX3, CsPbX 3-x X' x ,CsFAPbX 3-x X' x 、MAFAPbX 3-x X' x or CsFAMAPbX 3-x X' x One of; In the formula, X and X' both represent halogen elements.

5. The multidimensional perovskite solar cell with a wide processing window according to claim 1, characterized in that: The electron transport layer (4) is an inorganic material or an organic material; wherein, The inorganic material is one of SnO, ZnO, TiO2, ZnS, CdS, In2S3, MoS2 or SnS2; The organic material is one of PDI, NDI, PDIN or PDINO.

6. The multidimensional perovskite solar cell with a wide processing window according to claim 1, characterized in that: The metal electrode layer (5) is one of Au, Ag, Cu or Al.

7. A method for preparing a multidimensional perovskite solar cell with a wide processing window as claimed in any one of claims 1 to 6, characterized in that: The method comprises the following steps: Step S1, pretreatment of the transparent conductive electrode layer (1): ultrasonically cleaning the transparent conductive electrode layer (1) with deionized water, isopropyl alcohol, and acetone in sequence, then drying the transparent conductive electrode layer (1) with nitrogen, and treating it with UV-Ozone for 10 to 30 minutes; Step S2, preparation of hole transport layer (2): preparing a hole transport layer (2) on the pretreated transparent conductive electrode layer (1) to obtain a transparent conductive electrode layer / hole transport layer sample; Step S3, preparation of 1D / 3D perovskite light absorbing layer (3): preparing a 1D / 3D perovskite light absorbing layer (3) containing a hydrophobic group or a waterproof material on the hole transport layer (2) by spin coating, and annealing to obtain a transparent conductive electrode layer / hole transport layer / 1D / 3D perovskite light absorbing layer sample; Step S4, preparation of electron transport layer (4): preparing an electron transport layer (4) on the 1D / 3D perovskite light absorbing layer (3); Step S5, preparation of the metal electrode layer (5): depositing a metal material on the electron transport layer (4) to obtain a target product.

8. The method for preparing a multidimensional perovskite solar cell with a wide processing window according to claim 7, characterized in that: The hole transport layer (2) is prepared by one or more of PVD, ALD, CVD, screen printing and solution method, and has a thickness of 10 to 50 nm.

9. The method for preparing a multidimensional perovskite solar cell with a wide processing window according to claim 7, characterized in that: The annealing conditions include: a temperature of 70 to 180° C. and a time of 10 to 60 minutes.

10. The method for preparing a multi-dimensional perovskite solar cell with a wide processing window according to claim 7, characterized in that: The electron transport layer (4) is prepared by one or more of PVD, ALD, CVD, screen printing and solution method, and has a thickness of 10 to 100 nm.

11. The method for preparing a multidimensional perovskite solar cell with a wide processing window according to claim 7, characterized in that: The thickness of the metal electrode layer (5) is 50-200 nm.

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