Semiconductor light emitting device and display device
By designing specific layer structures and material combinations in semiconductor light emitting devices, the problems of poor transfer, low light efficiency and insufficient brightness in micro LED displays are solved, and higher assembly rate and better optical performance are achieved.
Patent Information
- Application Number
- CN202280101073.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-10-14
- Publication Date
- 2025-05-27
AI Technical Summary
When transferring micro LEDs on large micro LED displays quickly and accurately, the prior art has problems such as high transfer failure rate, low light efficiency and insufficient brightness, especially the brightness of the red semiconductor light emitting device is low and the self-assembly rate is low.
A semiconductor light emitting device is designed, which includes a light emitting layer, a passivation layer, an insulating layer, a first electrode and a second electrode. By placing an insulating layer and a reflective layer below the first region of the light emitting layer, and an ohmic contact layer below the second region, the light efficiency and brightness are enhanced, while the assembly rate is increased through the magnetic layer.
The light efficiency and brightness of semiconductor light emitting devices are improved, the assembly failure rate is reduced, the assembly rate is enhanced, and the problem of poor electrical connection is prevented.
Smart Images
Figure CN120052072A_ABST