Vacuum sputtering device for metal electrode of ceramic chip

Abstract

The invention discloses a ceramic chip metal electrode vacuum sputtering device which comprises a vacuum cavity, a vacuumizing device, a magnetron sputtering target assembly, a heating pipe, a movable rotating frame, a rotating driving mechanism and a material pushing trolley, and a positioning mechanism is used for limiting the position of the movable rotating frame in the vacuum cavity; the magnetron sputtering target assembly comprises a first sputtering target assembly and a second sputtering target assembly, the first sputtering target assembly is used for sputtering on the surface of the ceramic chip to form a first layer of metal electrode, and the second sputtering target assembly is used for sputtering on the surface of the first layer of metal electrode to form a second layer of metal electrode. The double-target layered sputtering design of the magnetron sputtering target assembly is combined with cooperative heat dissipation of the heat conduction copper plate and the water cooling jacket, the temperature of the target surface can be kept stable, and lattice defects caused by overheating are avoided; orthogonal rollers of the movable rotating frame drive the ceramic chip carrying disc to rotate at a constant speed in a constraint mode, uniform sputtering is achieved in cooperation with an annular magnetic field, and efficient batch production of ceramic chip metal electrodes is achieved.

Description

Technical Field

[0001] The present invention relates to the field of vacuum sputtering devices, and particularly to a vacuum sputtering device for metal electrodes of ceramic chips. Background Art

[0002] Metal electrodes on the surface of ceramic chips for varistors are usually prepared by screen printing or electroless plating processes. However, in application scenarios with high-precision and high-reliability requirements, traditional processes have problems such as weak electrode adhesion and poor thickness uniformity. Therefore, the prior art uses a vacuum magnetron sputtering process to improve the electrode quality. However, in existing sputtering devices, the loading, unloading, and positioning processes of the ceramic chip carrier depend on manual operations. It is necessary to repeatedly break the vacuum to take out the carrier for interlayer switching or adjustment. The operation steps are cumbersome and time-consuming, and it is difficult to achieve continuous production. Moreover, the precise alignment of the carrier and the sputtering target requires multiple manual calibrations, resulting in low production efficiency. In addition, when preparing multi-layer electrodes with traditional sputtering devices, due to insufficient heat dissipation efficiency of the target material and uneven magnetic field distribution, it is difficult to maintain a stable deposition rate, and the process stability is poor, thus affecting the sputtering quality and production efficiency of metal electrodes, and severely restricting the high-efficiency batch production of ceramic chip electrodes.

[0003] Therefore, there are defects in the prior art and improvements are needed. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a vacuum sputtering device for metal electrodes of ceramic chips that can improve production efficiency and has a stable deposition rate.

[0005] To achieve this purpose, the present invention adopts the following technical solutions: A vacuum sputtering device for metal electrodes of ceramic chips, comprising a vacuum chamber, a vacuum pumping device, a magnetron sputtering target assembly, a heating tube, a moving and rotating frame, a rotation driving mechanism, and a pusher cart;

[0006] The vacuum pumping device is connected to the vacuum chamber, and the vacuum pumping device is used to pump the vacuum chamber.

[0007] A positioning mechanism is provided in the middle of the vacuum chamber. First tracks are provided on both sides of the positioning mechanism. The pusher cart is used to push the moving and rotating frame onto the first tracks, and the positioning mechanism is used to limit the position of the moving and rotating frame on the first tracks;

[0008] The moving and rotating frame is used to hold a ceramic chip carrier. The rotation driving mechanism is provided at the bottom of the vacuum chamber, and the rotation driving mechanism is used to drive the moving and rotating frame to rotate;

[0009] The heating tube and the magnetron sputtering target assembly are arranged on the inner side wall of the vacuum cavity. The magnetron sputtering target assembly includes a first sputtering target assembly and a second sputtering target assembly. The first sputtering target assembly is used to sputter a first layer of metal electrode on the surface of the ceramic chip, and the second sputtering target assembly is used to sputter a second layer of metal electrode on the surface of the first layer of metal electrode.

[0010] Adopting the above technical solution, in the vacuum sputtering device for the metal electrode of the ceramic chip, the first sputtering target assembly and the second sputtering target assembly have the same structure, and both include a connecting plate, a mounting seat, an insulating connecting seat, a target, a heat-conducting copper plate, a water-cooling jacket, a magnet assembly and a magnetic steel positioning plate;

[0011] The connecting plate is arranged on the inner side wall of the vacuum cavity, and the connecting plate is connected to the mounting seat through the insulating connecting seat. The mounting seat is provided with a receiving cavity, the magnetic steel positioning plate is arranged in the receiving cavity, the magnet assembly is formed by splicing a plurality of magnets into an annular structure and is arranged on the magnetic steel positioning plate, and the magnet assembly is used to form an annular magnetic field;

[0012] The water-cooling jacket, the heat-conducting copper plate and the target are sequentially arranged on the surface of the magnet assembly from the inside to the outside. The heat-conducting copper plate is used to conduct the heat generated on the surface of the target to the water-cooling jacket, and the water-cooling jacket is used to cool the target.

[0013] Adopting the above technical solution, in the vacuum sputtering device for the metal electrode of the ceramic chip, the first metal electrode layer includes but is not limited to a nickel metal electrode or an aluminum metal electrode, and the second metal electrode layer includes but is not limited to a copper metal electrode or a silver metal electrode.

[0014] Adopting the above technical solution, in the vacuum sputtering device for the metal electrode of the ceramic chip, a shielding cover plate is arranged on the inner side wall of the vacuum cavity. The shielding cover plate is made of aluminum alloy and is used to block the metal particles scattered during the sputtering process.

[0015] Adopting the above technical solution, in the vacuum sputtering device for the metal electrode of the ceramic chip, the moving and rotating frame includes a fixed bottom plate, a rotating gear disk, a support frame, a first rotating roller, a second rotating roller, a moving roller and a positioning sleeve; a plurality of support columns are arranged along the circumferential direction on the edge of the support frame, and a clamping gap for clamping the ceramic chip carrier is formed between two adjacent support columns. The bottom of the support frame is connected to the rotating gear disk through a connecting column;

[0016] The fixed bottom plate is located below the rotating gear disk. The first rotating roller and the second rotating roller are both arranged on the fixed bottom plate. A ring groove is provided in the middle of the rotating gear disk. The rolling surface of the first rotating roller abuts against the bottom of the rotating gear disk, and the rolling surface of the second rotating roller abuts against the inner wall of the ring groove. The rolling surfaces of the first rotating roller and the second rotating roller are vertically arranged;

[0017] The moving rollers are arranged on both sides of the fixed bottom plate and are used to move along the first track. The positioning sleeve is arranged in the middle of the fixed bottom plate and is used to connect with the positioning mechanism when the moving rotating frame moves to the first track.

[0018] Adopting the above technical solution, in the vacuum sputtering device for the ceramic chip metal electrode, the rotation driving mechanism includes a rotation motor, a belt transmission assembly and a rotation gear. The rotation gear is rotatably arranged in the vacuum cavity and is used to mesh and connect with the rotating gear disk. The rotation motor is arranged outside the vacuum cavity, and the output shaft of the rotation motor is connected with the rotation gear through the belt transmission assembly.

[0019] Adopting the above technical solution, in the vacuum sputtering device for the ceramic chip metal electrode, the positioning mechanism includes a telescopic cylinder and a positioning column. A through hole is provided in the middle of the vacuum cavity. The positioning column can move up and down relative to the through hole. The telescopic cylinder is arranged outside the vacuum cavity, and its movable end is connected with the positioning column.

[0020] Adopting the above technical solution, in the vacuum sputtering device for the ceramic chip metal electrode, a second track is provided on the pusher cart and is used to guide the moving rotating frame to move along the direction of the first track;

[0021] An outward extending guiding arm is provided outside the second track, and a guiding pulley is provided at the end of the guiding arm. The guiding pulley is used to slidably abut against the outer side wall of the first track to align the second track with the first track when the moving rotating frame is conveyed to the vacuum cavity;

[0022] A positioning plug is provided at the end of the fixed bottom plate, and a positioning hole is provided on the positioning plug. A locking seat is provided at the end of the second track, and an avoidance hole for the positioning plug to extend into is provided on the locking seat. A knob plunger is provided at the top of the locking seat and is used to limit and abut against the positioning hole on the positioning plug to prevent the moving rotating frame from sliding on the second track.

[0023] With the above technical solution, in the vacuum sputtering device of the ceramic chip metal electrode, an infrared sensor is provided on the positioning post. The infrared sensor is used to emit infrared light and receive the reflected infrared light to detect the distance between the positioning sleeve and the positioning post.

[0024] With the above technical solution, the vacuum sputtering device of the ceramic chip metal electrode further includes a water-cooling row. The water-cooling row is attached to the outer wall of the vacuum chamber, and the water-cooling row is used to absorb the heat discharged from the vacuum chamber.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The double-target layered sputtering design of the magnetron sputtering target assembly of the present invention utilizes the thermal expansion adaptability between the first metal electrode layer and the ceramic substrate to improve the adhesion, and then optimizes the electrode performance through the high conductivity of the second metal electrode layer. Combined with the collaborative heat dissipation of the internal heat-conducting copper plate and the water-cooling sleeve of the target material, the temperature of the target surface is maintained stable, avoiding lattice defects caused by overheating; the moving and rotating frame is vertically constrained by the rolling of the first rotating roller and the second rotating roller, and combined with the driving action of the rotating gear disk and the rotating drive mechanism, the ceramic chip carrier rotates uniformly on the moving and rotating frame. Cooperating with the annular magnetic field of the magnetron sputtering target assembly, uniform sputtering deposition of the target material atoms on the surface of the ceramic chip can be realized, effectively reducing the thickness deviation of the electrode layer; the material-pushing cart compensates for the track deviation through the dynamic abutment of the guiding pulley. After the positioning insert block is inserted into the avoidance hole of the locking seat, the knob plunger can lock the moving and rotating frame, thereby preventing transportation slippage; the infrared sensor can monitor the distance between the positioning post and the positioning sleeve to achieve high-precision automatic docking; through the collaborative structure of double-target layered sputtering, dynamic rotation control and high-precision transmission positioning, the efficient batch production of the ceramic chip metal electrode is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0028] The structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the limiting conditions under which the present invention can be implemented. Therefore, they do not have technical essence. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope that the technical content disclosed by the present invention can cover.

[0029] Figure 1 Schematic structural diagram of the pushing state of the mobile rotating rack of the present invention;

[0030] Figure 2 Schematic overall structural diagram of the present invention;

[0031] Figure 3 Schematic internal structural diagram of the vacuum chamber of the present invention;

[0032] Figure 4 Schematic bottom structural diagram of the vacuum chamber of the present invention;

[0033] Figure 5 Schematic assembly structural diagram between the mobile rotating rack and the pusher cart of the present invention;

[0034] Figure 6 Schematic bottom structural diagram of the mobile rotating rack of the present invention;

[0035] Figure 7 Schematic explosion structural diagram of the first sputtering target assembly of the present invention;

[0036] Figure 8 Schematic installation structural diagram of the magnet assembly of the present invention. Detailed implementation manners

[0037] To make the objectives, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described below are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0038] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be intermediate components present simultaneously.

[0039] The technical solutions of the present invention will be further described below with reference to the accompanying drawings and through specific implementation manners.

[0040] As Figures 1 to 8As shown in the figure, an embodiment of the present invention provides a vacuum sputtering device for metal electrodes of a ceramic chip, including a vacuum chamber 1, a vacuum pumping device 2, a magnetron sputtering target assembly, a heating tube 4, a moving and rotating frame 5, a rotation driving mechanism 6, and a material pushing cart 7;

[0041] The vacuum pumping device 2 is connected to the vacuum chamber 1, and the vacuum pumping device 2 is used to pump the vacuum chamber 1 to form a vacuum environment in the vacuum chamber 1, so as to facilitate subsequent vacuum sputtering deposition operations;

[0042] A positioning mechanism 11 is provided in the middle of the vacuum chamber 1, and first tracks 12 are provided on both sides of the positioning mechanism 11. The material pushing cart 7 is used to push the moving and rotating frame 5 onto the first tracks 12, and the positioning mechanism 11 is used to limit the position of the moving and rotating frame 5 on the first tracks 12, preventing the workpiece on the moving and rotating frame 5 from shifting during the metal electrode sputtering process, thereby affecting the deposition thickness uniformity of the metal electrode;

[0043] The moving and rotating frame 5 is used to hold the ceramic chip carrier. The rotation driving mechanism 6 is arranged at the bottom of the vacuum chamber 1, and the rotation driving mechanism 6 is used to drive the moving and rotating frame 5 to rotate, so that the moving and rotating frame 5 drives the ceramic chip carrier to rotate uniformly around its central axis, ensuring that during the sputtering process, all parts of the surface of the ceramic chip can uniformly receive the metal ions released by the target material;

[0044] The heating tube 4 and the magnetron sputtering target assembly are arranged on the inner side wall of the vacuum chamber 1. The magnetron sputtering target assembly includes a first sputtering target assembly 31 and a second sputtering target assembly 32. The first sputtering target assembly 31 is used to sputter and form a first layer of metal electrode on the surface of the ceramic chip, and the second sputtering target assembly 32 is used to sputter and form a second layer of metal electrode on the surface of the first layer of metal electrode. When the ceramic chip carrier is positioned at the center of the vacuum chamber 1 through the moving and rotating frame 5, the heating tube 4 is first started, and the ceramic chip is uniformly heated by radiation to remove surface adsorbed impurities, enhance the activity of the substrate, and reduce stress defects caused by thermal expansion differences during subsequent sputtering. Subsequently, the vacuum chamber 1 maintains a low-pressure environment, and the first magnetron sputtering target assembly is energized to excite plasma. The target atoms are sputtered and deposited on the surface of the rotating ceramic chip under the action of the electric field to form a first layer of metal electrode. After the first layer of deposition is completed, the second magnetron sputtering target assembly is started according to preset process parameters, and a second layer of metal electrode with high conductivity is sputtered and deposited on the surface of the first layer of metal electrode. In this way, the purity, adhesion, and electrical properties of the metal electrode can be guaranteed, meeting the process requirements of the ceramic chip for the composite electrode structure.

[0045] As Figure 7 and Figure 8As shown, further, the first sputtering target assembly 31 and the second sputtering target assembly 32 have the same structure, and both include a connecting plate 311, a mounting seat 312, an insulating connecting seat 313, a target 314, a heat-conducting copper plate 315, a water-cooling jacket 316, a magnet assembly 317 and a magnet positioning plate 318. The connecting plate 311 is arranged on the inner side wall of the vacuum chamber 1, and the connecting plate 311 is connected to the mounting seat 312 through the insulating connecting seat 313. A receiving chamber is provided on the mounting seat 312. The magnet positioning plate 318 is arranged in the receiving chamber. The magnet assembly 317 is formed by splicing a plurality of magnets into an annular structure and is arranged on the magnet positioning plate 318. The magnet assembly 317 is used to form an annular magnetic field. The water-cooling jacket 316, the heat-conducting copper plate 315 and the target 314 are sequentially arranged on the surface of the magnet assembly 317 from the inside to the outside. The heat-conducting copper plate 315 is used to conduct the heat generated on the surface of the target 314 to the water-cooling jacket 316, and the water-cooling jacket 316 is used to cool the target 314. The insulating connecting seat 313 electrically isolates the mounting seat 312 from the vacuum chamber 1 to prevent a short circuit of the high-voltage electric field through the metal vacuum chamber 1; the magnet positioning plate 318 can accurately position the magnet assembly 317. The closed annular magnetic field formed by the magnet assembly 317 can confine the plasma near the surface of the target 314, thereby improving the ionization efficiency of the gas and enhancing the sputtering rate, while reducing the bombardment damage of high-energy particles to the ceramic chip; since a large amount of heat will be generated on the target 314 during the sputtering process due to continuous ion bombardment, the heat-conducting copper plate 315 is closely attached to the back of the target 314, and can quickly conduct the heat to the internal water-cooling jacket 316. The cooling medium circulating in the water-cooling jacket 316 takes out the heat through forced convection, avoiding lattice distortion, cracking or composition segregation of the target 314 due to local overheating, thereby maintaining the stability of the sputtering rate and the life of the target 314. With such a setting, controllable material peeling and uniform deposition can be achieved for different targets 314 during their respective sputtering stages, while reducing the maintenance complexity of the multi-target 314 structure.

[0046] Further, the first metal electrode layer includes, but is not limited to, a nickel metal electrode or an aluminum metal electrode, and the second metal electrode layer includes, but is not limited to, a copper metal electrode or a silver metal electrode. In this embodiment, the first metal electrode layer is an aluminum metal electrode and the second metal electrode layer is a copper metal electrode. After the ceramic chip carrier is positioned and preheated in the vacuum chamber 1, the aluminum target of the first sputtering target assembly 31 is excited by a high-power DC or pulsed power supply to generate plasma. Aluminum atoms are sputtered and uniformly deposited on the surface of the rotating ceramic substrate under the constraint of the annular magnetic field to form an aluminum electrode layer. Due to its characteristics of close thermal expansion coefficient to the ceramic material, high chemical stability of the surface oxide layer and low cost, aluminum can effectively relieve the thermal stress between the ceramic and the metal layer, and at the same time improve the adhesion, providing a stable interface foundation for the subsequent copper layer. Subsequently, the copper target of the second sputtering target assembly 32 is activated, and copper atoms are deposited on the surface of the aluminum layer at a higher sputtering energy to form a second copper electrode layer. This setting can meet the comprehensive requirements of corrosion resistance, high conductivity and long-term stability of ceramic chips in microelectronic packaging or sensor applications. It should be noted that the first metal electrode layer and the second metal electrode layer can also be made of other elemental metal electrodes or related alloy electrodes.

[0047] As Figure 3 shown, further, a shielding cover plate 13 is provided on the inner side wall of the vacuum chamber 1. The shielding cover plate 13 is made of aluminum alloy and is used to block the metal particles scattered during the sputtering process to prevent them from spreading to other areas of the vacuum chamber 1, and at the same time protect the vacuum chamber 1 and extend the service life of the equipment.

[0048] As Figure 5 and Figure 6As shown in the figure, further, the moving and rotating frame 5 includes a fixed bottom plate 51, a rotating gear disk 52, a support frame 53, a first rotating roller 54, a second rotating roller 55, a moving roller 56 and a positioning sleeve 57; a number of support columns 531 are provided along the circumferential direction at the edge of the support frame 53, and a material clamping gap for clamping the ceramic chip carrier is formed between two adjacent support columns 531. The bottom of the support frame 53 is connected to the rotating gear disk 52 through a connecting column 532. The fixed bottom plate 51 is located below the rotating gear disk 52. The first rotating roller 54 and the second rotating roller 55 are both arranged on the fixed bottom plate 51. A ring groove 520 is provided in the middle of the rotating gear disk 52. The rolling surface of the first rotating roller 54 abuts against the bottom of the rotating gear disk 52, and the rolling surface of the second rotating roller 55 abuts against the inner wall of the ring groove 520. The rolling surfaces of the first rotating roller 54 and the second rotating roller 55 are vertically arranged. The moving roller 56 is arranged on both sides of the fixed bottom plate 51, and the moving roller 56 is used to move along the first track 12. The positioning sleeve 57 is arranged in the middle of the fixed bottom plate 51, and the positioning sleeve 57 is used to connect with the positioning mechanism 11 when the moving and rotating frame 5 moves to the first track 12. When the pusher cart 7 pushes the moving and rotating frame 5 into the vacuum chamber 1 along the first track 12, the moving rollers 56 on both sides of the fixed bottom plate 51 contact the first track 12, which is convenient for realizing the position movement of the moving and rotating frame 5. After reaching the preset position, the positioning sleeve 57 in the middle of the fixed bottom plate 51 is docked with the positioning mechanism 11, and the rigid fixation in the axial and radial directions is realized through mechanical cooperation, eliminating the displacement deviation caused by inertia. At this time, the rotation drive mechanism 6 drives the rotating gear disk 52 to rotate around the vertical axis. The ring groove 520 at the bottom of the rotating gear disk 52 is closely attached to the vertical rolling surface of the second rotating roller 55, which can limit the radial runout of the gear disk. The horizontal rolling surface of the first rotating roller 54 contacts the bottom plane of the rotating gear disk 52, thus constituting a rolling support system with orthogonal constraints, converting sliding friction into rolling friction, reducing the rotation resistance and improving the rotation smoothness. The support frame 53 rotates synchronously with the rotating gear disk 52 through the connecting column 532. The material clamping gap formed by a plurality of support columns 531 at its edge can be used to fix the ceramic chip carrier, so that the ceramic chip carrier does not shift or loosen during high-speed rotation. With such a setting, through the coordinated cooperation of each component, the smooth movement of the ceramic chip carrier in the vacuum sputtering device is realized, effectively improving the overall reliability of the equipment, and thus realizing the batch electrode sputtering deposition process.In this embodiment, the rotation driving mechanism 6 includes a rotation motor 61, a belt pulley transmission assembly 62, and a rotation gear 63. The rotation gear 63 is rotatably disposed in the vacuum chamber 1. The rotation gear 63 is used for meshing connection with the rotating tooth disc 52. The rotation motor 61 is disposed outside the vacuum chamber 1, and the output shaft of the rotation motor 61 is connected to the rotation gear 63 through the belt pulley transmission assembly 62. The rotation motor 61 is used to drive the rotating tooth disc 52 to rotate through the rotation gear 63.

[0049] As Figure 1 and Figure 4 shown, further, the positioning mechanism 11 includes a telescopic cylinder 111 and a positioning column 112. A through hole is provided in the middle of the vacuum chamber 1. The positioning column 112 can move up and down relative to the through hole. The telescopic cylinder 111 is disposed outside the vacuum chamber 1, and its movable end is connected to the positioning column 112. When the moving rotary frame 5 is pushed by the material pushing cart 7 along the first track 12 to the middle of the vacuum chamber 1, the telescopic cylinder 111 is activated, and its movable end drives the positioning column 112 to extend upward through the through hole in the middle of the vacuum chamber 1. The positioning column 112 is precisely docked with the positioning sleeve 57 at the bottom of the moving rotary frame 5, and rigid fixation in the axial and radial directions is achieved through mechanical cooperation.

[0050] As Figure 5As shown, further, a second track 71 is provided on the pusher cart 7. The second track 71 is used to guide the movement of the movable rotary frame 5 along the direction of the first track 12. An outwardly extending guide arm 72 is provided outside the second track 71. A guide pulley 73 is provided at the end of the guide arm 72. The guide pulley 73 is used to slidably abut against the outer wall of the first track 12 to align the second track 71 with the first track 12 when the movable rotary frame 5 is transported to the vacuum chamber 1. A positioning plug 511 is provided at the end of the fixed base plate 51. A positioning hole 510 is provided on the positioning plug 511. A locking seat 74 is provided at the end of the second track 71. An avoidance hole 740 for the positioning plug 511 to extend into is provided on the locking seat 74. A knob plunger 75 is provided at the top of the locking seat 74. The knob plunger 75 is used to limit and abut against the positioning hole 510 on the positioning plug 511 to prevent the movable rotary frame 5 from sliding on the second track 71. When the movable rotary frame 5 is loaded onto the second track 71 of the pusher cart 7, the positioning plug 511 at the end of its fixed base plate 51 is inserted into the avoidance hole 740 of the locking seat 74. At this time, the knob plunger 75 is embedded in the positioning hole 510 of the positioning plug 511 to form a rigid lock, preventing the pusher cart 7 from causing accidental sliding or deviation of the movable rotary frame 5 during movement; when the pusher cart 7 carries the movable rotary frame 5 to the entrance of the vacuum chamber 1, the guide pulley 73 at the end of the guide arm 72 outside the second track 71 contacts the outer wall of the first track 12 of the vacuum chamber 1 to ensure the precise alignment of the second track 71 with the first track 12. Subsequently, the operator releases the lock on the movable rotary frame 5. Then, the pusher cart 7 smoothly pushes the movable rotary frame 5 into the vacuum chamber 1 along the first track 12 until the positioning sleeve 57 of the movable rotary frame 5 is docked and fixed with the positioning mechanism 11 inside the chamber. With this setting, it not only avoids accidental slippage caused by inertia during transportation, but also ensures a smooth transition of the track docking through the dynamic deviation correction of the guide pulley 73, thereby achieving the precise positioning of the movable rotary frame 5 inside the vacuum chamber 1.

[0051] Further, an infrared sensor (not shown) is provided on the positioning post 112. The infrared sensor is configured to emit infrared light and receive the reflected infrared light to detect the distance between the positioning sleeve 57 and the positioning post 112. When the material pushing cart 7 pushes the moving rotary frame 5 to the entrance of the vacuum chamber 1, the infrared sensor on the positioning post 112 continuously emits modulated infrared light beams and receives the echo signals reflected from the surface of the positioning sleeve 57. The axial distance between the positioning sleeve 57 and the positioning post 112 is calculated in real time by the time of flight. As the material pushing cart 7 gradually advances, the control system dynamically adjusts the moving speed and direction of the material pushing cart 7 according to the distance feedback of the infrared sensor to ensure that the central axes of the positioning sleeve 57 and the positioning post 112 gradually approach coincidence. When the two enter the preset docking threshold range, the telescopic cylinder 111 is activated to drive the positioning post 112 to rise and insert into the positioning sleeve 57 to achieve positioning and locking.

[0052] As Figure 4 shown, further, a water-cooled radiator 100 is further included. The water-cooled radiator 100 is attached to the outer wall of the vacuum chamber 1. The water-cooled radiator 100 is used to absorb the heat discharged from the vacuum chamber 1, thereby maintaining the temperature stability of the vacuum chamber 1 and extending the overall service life of the equipment.

[0053] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vacuum sputtering device for metal electrodes of ceramic chips, characterized in that: It includes a vacuum chamber, a vacuum pumping device, a magnetron sputtering target assembly, a heating tube, a mobile rotating frame, a rotating driving mechanism and a material pusher; The vacuum pumping device is connected to the vacuum cavity, and the vacuum pumping device is used to perform vacuum processing on the vacuum cavity; A positioning mechanism is provided in the middle of the vacuum chamber, first tracks are provided on both sides of the positioning mechanism, the pusher is used to push the mobile rotating frame onto the first track, and the positioning mechanism is used to limit the position of the mobile rotating frame on the first track; The movable rotating frame is used to clamp the ceramic chip carrier, and the rotation driving mechanism is arranged at the bottom of the vacuum chamber, and the rotation driving mechanism is used to drive the movable rotating frame to rotate; The heating tube and the magnetron sputtering target assembly are arranged on the inner wall of the vacuum chamber. The magnetron sputtering target assembly includes a first sputtering target assembly and a second sputtering target assembly. The first sputtering target assembly is used to sputter to form a first layer of metal electrode on the surface of the ceramic chip, and the second sputtering target assembly is used to sputter to form a second layer of metal electrode on the surface of the first layer of metal electrode.

2. The vacuum sputtering device for ceramic chip metal electrodes according to claim 1, characterized in that: The first sputtering target assembly and the second sputtering target assembly have the same structure, and both include a connecting plate, a mounting seat, an insulating connecting seat, a target material, a heat-conducting copper plate, a water cooling jacket, a magnet assembly, and a magnetic steel positioning plate; The connecting plate is arranged on the inner side wall of the vacuum chamber, and the connecting plate is connected to the mounting seat through the insulating connecting seat. The mounting seat is provided with a containing chamber, and the magnetic steel positioning plate is arranged in the containing chamber. The magnet assembly is composed of a plurality of magnets spliced ​​together to form an annular structure and arranged on the magnetic steel positioning plate. The magnet assembly is used to form an annular magnetic field; The water cooling jacket, the heat-conducting copper plate and the target material are sequentially arranged on the surface of the magnet assembly from the inside to the outside. The heat-conducting copper plate is used to conduct the heat generated on the surface of the target material to the water cooling jacket, and the water cooling jacket is used to cool the target material.

3. The vacuum sputtering device for ceramic chip metal electrodes according to claim 2, characterized in that: The first metal electrode layer includes but is not limited to a nickel metal electrode or an aluminum metal electrode, and the second metal electrode layer includes but is not limited to a copper metal electrode or a silver metal electrode.

4. The vacuum sputtering device for ceramic chip metal electrodes according to claim 1, characterized in that: A shielding cover plate is provided on the inner side wall of the vacuum chamber. The shielding cover plate is made of aluminum alloy and is used to block metal particles scattered during the sputtering process.

5. The vacuum sputtering device for ceramic chip metal electrodes according to claim 1, characterized in that: The movable rotating frame comprises a fixed bottom plate, a rotating toothed disc, a supporting frame, a first rotating roller, a second rotating roller, a movable roller and a positioning sleeve; a plurality of supporting columns are arranged along the circumferential direction at the edge of the supporting frame, and a clamping gap for clamping the ceramic chip carrier is formed between two adjacent supporting columns, and the bottom of the supporting frame is connected to the rotating toothed disc through a connecting column; The fixed bottom plate is located below the rotating toothed disc, the first rotating roller and the second rotating roller are both arranged on the fixed bottom plate, a ring groove is arranged in the middle of the rotating toothed disc, the rolling surface of the first rotating roller abuts against the bottom of the rotating toothed disc, the rolling surface of the second rotating roller abuts against the inner wall of the ring groove, and the rolling surfaces of the first rotating roller and the second rotating roller are arranged vertically; The movable rollers are arranged on both sides of the fixed base plate, and the movable rollers are used to move along the first track. The positioning sleeve is arranged in the middle of the fixed base plate, and the positioning sleeve is used to connect with the positioning mechanism when the movable rotating frame moves onto the first track.

6. The vacuum sputtering device for ceramic chip metal electrodes according to claim 5, characterized in that: The rotary drive mechanism includes a rotary motor, a pulley transmission assembly and a rotary gear. The rotary gear is rotatably disposed in the vacuum chamber. The rotary gear is used to engage with the rotary gear disk. The rotary motor is disposed outside the vacuum chamber, and the output shaft of the rotary motor is connected to the rotary gear through the pulley transmission assembly.

7. The vacuum sputtering device for ceramic chip metal electrodes according to claim 5, characterized in that: The positioning mechanism includes a telescopic cylinder and a positioning column. A through hole is provided in the middle of the vacuum chamber. The positioning column can be telescopically moved up and down relative to the through hole. The telescopic cylinder is arranged outside the vacuum chamber, and its movable end is connected to the positioning column.

8. The vacuum sputtering device for ceramic chip metal electrodes according to claim 5, characterized in that: The pusher is provided with a second track, and the second track is used to guide the movable rotating frame to move along the direction of the first track; A guide arm extending outward is provided on the outer side of the second track, and a guide pulley is provided at the end of the guide arm, and the guide pulley is used to slide and abut against the outer side wall of the first track, so as to realize the alignment of the second track and the first track when the mobile rotating frame is transported to the vacuum chamber; A positioning block is provided at the end of the fixed base plate, a positioning hole is provided on the positioning block, a locking seat is provided at the end of the second track, an avoidance hole is provided on the locking seat for the positioning block to extend into, a knob plunger is provided on the top of the locking seat, and the knob plunger is used to limit and abut with the positioning hole on the positioning block to prevent the movable rotating frame from sliding on the second track.

9. The vacuum sputtering device for ceramic chip metal electrodes according to claim 7, characterized in that: An infrared sensor is provided on the positioning post, and the infrared sensor is used to emit infrared light and receive reflected infrared light to detect the distance between the positioning sleeve and the positioning post.

10. The vacuum sputtering device for ceramic chip metal electrodes according to claim 1, characterized in that: It also includes a water-cooling row, which is attached to the outer wall of the vacuum cavity and is used to absorb and discharge heat from the vacuum cavity.

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