Monocrystalline silicon etching device and etching method

Abstract

The monocrystalline silicon etching device comprises a main shaft and an etching pool body, the main shaft can rotate along the axis of the main shaft, the main shaft is fixedly provided with a sleeve seat, the sleeve seat is provided with a shaft body, the shaft body can rotate along the axis of the main shaft and can rotate around the axis of the main shaft, the shaft body is fixedly provided with a connecting seat, and the connecting seat and the shaft body are coaxially arranged. A material base is fixedly installed on the connecting base, can rotate around the axis of the connecting base, is inserted into the connecting base, is provided with a first groove body, is located on the side, away from the connecting base, of the material base and is further provided with a first hole channel, the first hole channel is communicated with the first groove body, fan blades are fixedly installed on the shaft body, and the fan blades rotate to enable fluid to flow to the first hole channel. The invention provides a monocrystalline silicon etching device and an etching method, which can improve the etching efficiency and reduce pollution.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal silicon etching equipment, and more specifically, to a single crystal silicon etching device and an etching method. Background Art

[0002] The single crystal silicon plate is a rectangular plate structure. After the texturing process, a textured surface is formed on one side surface, and the other surfaces need to be etched to remove the surface N layer. Currently, the single crystal silicon etching process usually uses wet etching. The other side surface opposite to the textured surface is the main etching area. When the current etching equipment performs etching operations on the single crystal silicon plate, the etching surface of the single crystal silicon plate is parallel to the flowing direction of the liquid medium, and the etching efficiency is relatively low. Summary of the Invention

[0003] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, and provide a single crystal silicon etching device and an etching method, which can improve the etching efficiency and reduce pollution.

[0004] To achieve the above purpose, the present invention adopts the following technical solutions: A single crystal silicon etching device includes a main shaft and an etching tank body. The main shaft can rotate along its own axis. A sleeve seat is fixedly installed on the main shaft. A shaft body is installed on the sleeve seat. The shaft body can rotate along its own axis and can rotate around the axis of the main shaft. A connecting seat is fixedly installed on the shaft body. The connecting seat is coaxially arranged with the shaft body. A material seat is fixedly installed on the connecting seat. The material seat can rotate around the axis of the connecting seat. The material seat is inserted into the connecting seat. The material seat is provided with a first groove. The first groove is located on the side of the material seat away from the connecting seat. The material seat is also provided with a first hole. The first hole communicates with the first groove. A fan blade is fixedly installed on the shaft body. The fan blade rotates to make the fluid flow towards the first hole; A fixing ring is fixedly installed on the side of the material seat away from the connecting seat. The fixing ring is provided with a through groove. The through groove is arranged corresponding to the first groove one by one. The through groove communicates with the corresponding first groove. Along the axial direction of the connecting seat, the width of the through groove is smaller than the width of the first groove. The through groove is located on the side of the corresponding first groove close to the first hole.

[0005] The present invention is further configured as including a second air ring. The second air ring is externally connected to an air pump. The second air ring is provided with a second through hole. When the second through hole is directly opposite to the first hole, the airflow ejected from the second through hole flows into the first hole; It further includes a push plate. The material seat is also provided with a second hole. The second hole is located on the side of the first groove away from the first hole. The second hole is coaxial with the first hole. The push plate can move axially along the second hole. The push plate can pass through the second hole and be inserted into the first groove.

[0006] The present invention is further configured as the material seat is also provided with a third hole. The third hole communicates with the first groove. The side of the third hole away from communicating with the first groove penetrates the outer wall of the material seat.

[0007] The present invention is further configured as the shaft body is inserted into the sleeve seat. The shaft body is connected to the sleeve seat through a bearing. The sleeve seat is located on both sides of the shaft body. The axis of the shaft body is parallel to the axis of the sleeve seat.

[0008] The present invention is further configured such that a plurality of material seats are evenly distributed along the circumference of the connecting seat, the fixing ring is inserted into the plurality of material seats, and the outer wall of the material seat away from the connecting seat is attached to and fixed to the inner wall of the fixing ring.

[0009] The present invention is further configured such that air ring two is fixedly connected with air ring one, air ring one is provided with cavity one and through hole one, cavity one is connected to the air pump, through hole one is connected to cavity one, air ring two is provided with cavity two, cavity two is connected to through hole two, two ends of through hole one are respectively connected to cavity one and cavity two, when the material seat is transferred to the highest position, air ring two is located directly above the shaft body, and through hole two is directly opposite to channel one.

[0010] The present invention is further configured such that a plurality of through holes are provided, and the aperture of the through hole one gradually increases along a direction away from one end of the gas entering the cavity, and a plurality of through holes are provided with the same aperture.

[0011] The present invention is further configured to include a cylinder body, which can move axially along the shaft body. The cylinder body is provided with an opening. When the shaft body is transferred to the highest position, the opening of the cylinder body can be inserted into the material seat. The side of the cylinder body away from its opening is connected to a connecting pipe, and the connecting pipe is connected to a collecting barrel.

[0012] The present invention is further configured such that a driving component four is installed on the inner wall of the bottom of the cylinder, and an output end of the driving component four is fixedly connected to the push plate.

[0013] The present invention also adopts the following technical solution: an etching method, using a single crystal silicon etching device to etch a crystalline silicon plate, comprising the following steps:

[0014] ① Feeding: The shaft body rotates around the main axis to the upper limit position, and the shaft body is driven to rotate around its own axis until one of the through slots is facing upward. The crystalline silicon plate is put into the through slot from the top, and the crystalline silicon plate passes through the through slot and falls into the slot body 1. The inner wall of the bottom of the slot body 1 abuts against the crystalline silicon plate, and the through hole 2 sprays gas to make the crystalline silicon plate fall over, and the side of the crystalline silicon plate away from the inner wall of the bottom of the slot body 1 is staggered with the through slot;

[0015] ② Etching: The shaft rotates around the main axis to the lower limit position, driving the shaft to rotate around its own axis, and the fan blades rotate to make the etching fluid medium flow. Under the action of the etching fluid medium flow, the crystalline silicon plate surface is perpendicular to the flow direction of the etching fluid medium, and one side of the crystalline silicon plate is impacted by the etching fluid medium;

[0016] ③ Cleaning of the etched medium on the plate surface: The shaft body rotates around the main shaft to the upper limit position, the cylinder body is sleeved on the material seat, the shaft body is driven to rotate around its own axis, gas is ejected from the second through hole. When the second through hole is directly opposite to the first hole, the gas ejected from the second through hole acts on the liquid medium on the surface of the crystalline silicon plate, so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind generated by the rotation of the fan blades, the liquid medium existing in the form of small droplets is blown into the connecting pipe, and is re-aggregated into a liquid in the connecting pipe and gathered in the aggregate cylinder for recycling;

[0017] ④ Blanking: When the material seat on the upper shaft body rotates to the lower end, the push plate extends into the first groove to push the crystalline silicon plate towards the through groove direction. The push plate extends out of the first groove to disengage from the crystalline silicon plate, and the crystalline silicon plate falls downward under the action of gravity.

[0018] In summary, the present invention has the following beneficial effects:

[0019] When the crystalline silicon plate is in the etching state, its etched plate surface is directly opposite to the flow direction of the etching liquid medium, and the etched surface of the crystalline silicon plate is directly impacted by the fluid head-on, accelerating the etching efficiency. After etching, it disengages from the etching liquid medium and quickly performs plate surface cleaning. Under the action of the wind generated by the rotation of the fan blades, the liquid medium existing in the form of small droplets is blown into the connecting pipe, and is re-aggregated into a liquid in the connecting pipe and gathered in the aggregate cylinder for recycling, so as to reduce the pollution of the fluid medium and improve its utilization rate. Description of the drawings

[0020] Figure 1 It is a cross-sectional schematic diagram of the embodiment;

[0021] Figure 2 It is Figure 1 The enlarged view of part A in

[0022] Figure 3 It is Figure 1 The enlarged view of part B in

[0023] Figure 4 It is Figure 3 The partial cross-sectional schematic diagram in the M-M direction of

[0024] Figure 5 It is Figure 3 The state of the crystalline silicon plate in Figure 1 ;

[0025] Figure 6 It is Figure 3 The state of the crystalline silicon plate in Figure 2 .

[0026] Reference numerals: main shaft 1, support base 11, bearing 12, driving component 13, first gear 131, second gear 14, sleeve base 2, ring body 21, second driving component 22, shaft body 3, extension shaft 31, gear pair 32, fan blade 33, connecting seat 34, material seat 35, first groove body 351, first channel 352, second channel 353, third channel 354, fixing ring 36, through groove 361, crystalline silicon plate 4, first fixing frame 5, support 51, first air ring 52, first cavity 521, first through hole 522, second air ring 53, second cavity 531, second through hole 532, air nozzle 54, second fixing frame 6, second groove body 61, slide rail 62, slider 63, third driving component 7, connecting block 71, cylinder body 72, fourth driving component 721, push plate 722, communication port 723, connecting pipe 73, aggregate cylinder 74, conveyor belt 8, etching bath body 9. Detailed implementation manners

[0027] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0028] As Figures 1 - 6 shown, this embodiment discloses a single-crystalline silicon etching device, including a main shaft 1 and an etching bath body 9. As Figure 1 shown, support bases 11 are installed at both axial ends of the main shaft 1. The main shaft 1 is inserted into the support bases 11 and connected through bearings 12. A driving component 13 is installed on the support bases 11. The driving component 13 is a motor. The output end of the driving component 13 is connected with a first gear 131. The first gear 131 meshes with a second gear 14. The second gear 14 is sleeved and installed on the main shaft 1. The main shaft 1 is driven to rotate by the driving component 13. The main shaft 1 is located above the etching bath body 9. A liquid etching medium is contained in the etching bath body 9. The crystalline silicon plate 4 is etched through the liquid etching medium. The crystalline silicon plate 4 is a rectangular sheet structure. Before etching, a velvet surface has been formed on one side of the crystalline silicon plate 4 by texturing. The etching is mainly directed at the other side to remove the N layer on its surface through the etching medium.

[0029] As Figure 1As shown in the figure, a socket 2 is fixedly installed on the main shaft 1. The main shaft 1 is inserted into the socket 2. The socket 2 includes an annular body 21, and the annular body 21 is of a circular ring structure. Shaft bodies 3 are installed on both sides of the annular body 21. The axis of the shaft body 3 is parallel to the axis of the socket 2. The shaft body 3 can rotate along its own axis and can also rotate around the axis of the main shaft 1. Specifically, the shaft body 3 includes an extension shaft 31, and the extension shaft 31 is inserted into the annular body 21 and connected through a bearing. A second driving component 22 is installed on the socket 2. The second driving component 22 is a waterproof motor. The output end of the second driving component 22 is connected with a gear pair 32, and the gear pair 32 is connected with the extension shaft 31. The extension shaft 31 is driven to rotate by the second driving component 22.

[0030] As Figure 1 shown, a connecting seat 34 is fixedly installed on the shaft body 3. The connecting seat 34 is coaxially arranged with the shaft body 3. Combining Figure 3 with Figure 3 , Figure 4 a material seat 35 is fixedly installed on the connecting seat 34. A plurality of material seats 35 are circumferentially and evenly distributed along the connecting seat 34. The material seat 35 can rotate around the axis of the connecting seat 34. The material seat 35 is inserted into the connecting seat 34. Combining

[0031] with Figure 3 , Figure 4 the material seat 35 is provided with a first groove 351. The first groove 351 is located on the side of the material seat 35 far from the connecting seat 34. A fixing ring 36 is fixedly installed on the side of the material seat 35 far from the connecting seat 34. The fixing ring 36 sleeves a plurality of material seats 35. The outer wall of the side of the material seat 35 far from the connecting seat 34 is attached to and fixed with the inner wall of the fixing ring 36. The fixing ring 36 is provided with a through groove 361. The through groove 361 is arranged in one-to-one correspondence with the first groove 351, and the through groove 361 is communicated with the corresponding first groove 351. The crystalline silicon plate 4 is placed into the first groove 351 through the through groove 361.

[0031] Combining Figure 3 , Figure 4 , the material seat 35 is further provided with a first hole 352 and a second hole 353. Both the first hole 352 and the second hole 353 are communicated with the first groove 351. The first hole 352 and the second hole 353 are respectively located on the left and right sides of the first groove 351. The second hole 353 is coaxially arranged with the first hole 352. The material seat 35 is further provided with a third hole 354. The third hole 354 is communicated with the first groove 351. The side of the third hole 354 far from being communicated with the first groove 351 penetrates through the outer wall of the material seat 35.

[0032] As Figure 3 shown, along the axial direction of the connecting seat 34, the width of the through groove 361 is smaller than the width of the first groove 351. The through groove 361 is located on the side of the corresponding first groove 351 close to the first hole 352.

[0033] As Figure 1 shown, it further includes a first fixing frame 5. A support 51 is installed on the first fixing frame 5. Combining Figure 2The bracket 51 is fixedly mounted with an air ring 1 52, and the air ring 1 52 is fixedly connected with an air ring 2 53. The air ring 1 52 is provided with a cavity 1 521 and a through hole 1 522. The top of the cavity 1 521 is connected to an external air pump through an air nozzle 54. The air nozzle 54 is mounted on the top of the air ring 1 52, and the through hole 1 522 is connected to the cavity 1 521.

[0034] The second air ring 53 is provided with a second cavity 531 and a second through hole 532. The second cavity 531 is connected to the second through hole 532. The two ends of the first through hole 522 are connected to the first cavity 521 and the second cavity 531 respectively. When the material holder 35 is transferred to the highest position, the second air ring 53 is located directly above the shaft body 3, the second through hole 532 is directly opposite to the first channel 352, and the airflow ejected from the second through hole 532 flows into the first channel 352. Figure 6 As shown, the material holder 35 is transferred to the highest position, and the crystalline silicon plate 4 is placed in a state where the through groove 361 is facing upward. Under the action of the airflow, the crystalline silicon plate 4 is subjected to friction resistance at the bottom, and the upper end of the crystalline silicon plate 4 tilts to the right, so that the upper end of the crystalline silicon plate 4 is staggered with the through groove 361. When the crystalline silicon plate 4 and the through groove 36 are in this position, the material holder 35 continues to rotate to a state where the through groove 361 is facing downward, and the crystalline silicon plate 4 will not separate from the material holder 35 from the through groove 361.

[0035] After the etching of the crystalline silicon plate 4 is completed, the residual medium on the surface of the crystalline silicon plate 4 is cleaned by jetting air through the second through hole 532. Figure 2 As shown, a plurality of through holes 522 are provided, and the through holes 522 are arranged along a direction away from one end of the gas inlet cavity 521 (i.e. Figure 2 The aperture of through hole 1 522 gradually increases, and through hole 2 532 is provided with multiple holes with the same aperture. The gas inlet end of cavity 1 521 is located at the upper end. When the airflow enters cavity 1 521, the gas flow resistance is large due to the small aperture of through hole 1 522 above, which makes the gas easy to sink, so that the gas entering cavity 2 531 is more evenly distributed. Finally, the gas is ejected from through hole 1 522 and acts on the surface of crystalline silicon plate 4 with better uniformity, higher utilization rate of airflow, and improved cleaning effect of crystalline silicon plate 4.

[0036] The shaft 3 is fixedly mounted with a fan blade 33, which rotates to make the fluid (i.e., the etching medium) flow toward the channel 1 352. As the fluid flows, the fluid pushes Figure 6 The crystalline silicon plate 4 in the Figure 3 In the middle position state, the etching surface of the crystalline silicon plate 4 is directly impacted by the front side of the fluid, thereby improving the efficiency.

[0037] like Figure 1 As shown, the single crystal silicon etching device also includes a cylinder 72, which can move axially along the shaft 3 (i.e. Figure 2Move left and right. Specifically, the second fixing frame 6 is installed with a third driving component 7. The output end of the third driving component 7 is installed with a connecting block 71. The second fixing frame 6 is provided with a second groove 61. The connecting block 71 passes through the second groove 61 and is fixedly installed with a sliding block 63. The bottom of the second fixing frame 6 is installed with a sliding rail 62. The sliding block 63 is slidably connected with the sliding rail 62. The cylinder body 72 is fixedly connected with the sliding block 63.

[0038] As Figure 1 shown, the left side of the cylinder body 72 is provided with an opening. When the shaft body 3 is transferred to the highest position, the opening of the cylinder body 72 can be sleeved on the material seat 35. The side of the cylinder body 72 away from its opening is provided with a communication port 723. The communication port 723 is communicated with a connecting pipe 73. The connecting pipe 73 is communicated with an aggregate cylinder 74. Combined with Figures 1 - 3 , the gas ejected from the second through hole 532 acts on the liquid medium on the surface of the crystalline silicon plate 4, so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind force generated by the rotation of the fan blades 33, the liquid medium existing in the form of small droplets is blown into the connecting pipe 73, and is re-aggregated into a liquid in the connecting pipe 73 and gathered in the aggregate cylinder 74 for recycling, so as to reduce the pollution of the fluid medium and improve its utilization rate.

[0039] As Figure 1 shown, a fourth driving component 721 is installed on the inner wall of the bottom of the cylinder body 72. The output end of the fourth driving component 721 is fixedly connected with a push plate 722. The push plate 722 can move axially along the second hole 353. The push plate 722 can pass through the second hole 353 and insert into the first groove 351. Combined with Figure 4 , when the through groove 361 faces downward, the crystalline silicon plate 4 is pushed by the push plate 722, so that the crystalline silicon plate 4 falls downward from the through groove 361 and exits to the conveyor belt 8 (as Figure 1 shown). The conveying direction of the conveyor belt 8 is horizontal and perpendicular to the axial direction of the main shaft 1.

[0040] The etching method of the above monocrystalline silicon etching device is as follows:

[0041] ① Feeding: As Figure 1 shown, the shaft body 3 rotates around the main shaft 1 to the upper limit position. Combined with Figure 4 , Figure 5 , the shaft body 3 is driven to rotate around its own axial direction until one of the through grooves 361 is in the upward state. The crystalline silicon plate 4 is placed from the top of the through groove 361. The crystalline silicon plate 4 passes through the through groove 361 and falls into the first groove 351. The inner wall of the bottom of the first groove 351 abuts against the crystalline silicon plate 4. The right side plate surface of the crystalline silicon plate 4 is the texturing surface. The right side plate surface of the crystalline silicon plate 4 faces the second hole 353. The left side plate surface of the crystalline silicon plate 4 faces the first hole 352. Combined with Figure 2 , Figure 6The gas is ejected from the second through hole 532 to tilt the crystalline silicon plate 4, so that the side of the crystalline silicon plate 4 away from the inner wall of the bottom of the first tank 351 is staggered from the through groove 361, preventing the crystalline silicon plate 4 from disengaging from the through groove 361 when it rotates downward.

[0042] ② Etching: When the lower end limit position of the shaft body 3 rotating around the main shaft 1, the shaft body 3 is driven to rotate around its own axis, and the fan blade 33 rotates to make the etching fluid medium flow. As Figure 1 , Figure 3 , Figure 6 shown, under the action of the flowing etching fluid medium, the crystalline silicon plate 4 forms the state at the position shown in Figure 3 . The left side plate surface of the crystalline silicon plate 4 is perpendicular to the flowing direction of the etching fluid medium. The left side of the crystalline silicon plate 4 is the etching working surface and is directly impacted by the etching fluid medium, and the etching is quickly completed. The etching fluid medium entering the first tank 351 can flow out from the third hole 354.

[0043] ③ Cleaning of the etching medium on the plate surface: As Figure 1 shown, when the shaft body 3 rotates around the main shaft 1 to the upper end limit position, the cylinder body 72 is sleeved on the material seat 35, the shaft body 3 is driven to rotate around its own axis, and the gas is ejected from the second through hole 532. When the second through hole 532 is aligned with the first hole 352, the gas ejected from the second through hole 532 acts on the liquid medium on the plate surface of the crystalline silicon plate 4, so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind generated by the rotation of the fan blade 33, the liquid medium existing in the form of small droplets is blown into the connecting pipe 73, and re-aggregates into liquid in the connecting pipe 73 and aggregates in the collecting cylinder 74 for recycling, so as to reduce the pollution of the fluid medium and improve its utilization rate.

[0044] ④ Blanking: When the material seat 35 on the upper shaft body 3 rotates to the lower end, the push plate 722 extends into the first tank 351 to push the crystalline silicon plate 4 towards the through groove 361. The push plate 722 extends out of the first tank 351 to disengage from the crystalline silicon plate 4. The crystalline silicon plate 4 falls downward under the action of gravity and enters the conveyor belt 8 for transmission.

[0045] The above is only the preferred implementation manner of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions falling within the idea of the present invention belong to the protection scope of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and retouches should also be regarded as the protection scope of the present invention.

Claims

1. A single crystal silicon etching device, characterized in that: The invention comprises a main shaft (1) and an etching pool body (9), wherein the main shaft (1) is capable of rotating along its own axis, a sleeve seat (2) is fixedly mounted on the main shaft (1), a shaft body (3) is mounted on the sleeve seat (2), the shaft body (3) is capable of rotating along its own axis and around the axis of the main shaft (1), a connecting seat (34) is fixedly mounted on the shaft body (3), the connecting seat (34) is coaxially arranged with the shaft body (3), a material seat (35) is fixedly mounted on the connecting seat (34), and the material seat (35) is capable of rotating around the axis of the main shaft (1). The connecting seat (34) is axially rotated, the material seat (35) is inserted into the connecting seat (34), the material seat (35) is provided with a groove body (351), the groove body (351) is located on the side of the material seat (35) away from the connecting seat (34), the material seat (35) is also provided with a channel (352), the channel (352) is connected with the groove body (351), the shaft (3) is fixedly installed with a fan blade (33), the fan blade (33) rotates to make the fluid flow to the channel (352); A fixing ring (36) is fixedly installed on one side of the material seat (35) away from the connecting seat (34); the fixing ring (36) is provided with a through groove (361); the through groove (361) is arranged in a one-to-one correspondence with the groove body one (351); the through groove (361) is communicated with the corresponding groove body one (351); along the axial direction of the connecting seat (34), the width of the through groove (361) is smaller than the width of the groove body one (351); the through groove (361) is located on the side of the corresponding groove body one (351) close to the channel one (352).

2. A single crystal silicon etching device according to claim 1, characterized in that: It also includes a second air ring (53), the second air ring (53) is externally connected to an air pump, the second air ring (53) is provided with a second through hole (532), when the second through hole (532) is directly opposite to the first hole (352), the airflow ejected from the second through hole (532) flows into the first hole (352); It also includes a push plate (722), and the material seat (35) is also provided with a second channel (353), and the second channel (353) is located on the side of the groove body (351) away from the first channel (352), and the second channel (353) is coaxial with the first channel (352), and the push plate (722) can move axially along the second channel (353), and the push plate (722) can pass through the second channel (353) and be inserted into the groove body (351).

3. A single crystal silicon etching device according to claim 1, characterized in that: The material holder (35) is further provided with a third channel (354), wherein the third channel (354) is connected to the first groove body (351), and the third channel (354) penetrates the outer wall of the material holder (35) away from the side connected to the first groove body (351).

4. The single crystal silicon etching device according to claim 1, characterized in that: The shaft body (3) is inserted into the sleeve (2), the shaft body (3) and the sleeve (2) are connected via a bearing, the sleeve (2) is located on both sides of the shaft body (3), and the axis of the shaft body (3) is parallel to the axis of the sleeve (2).

5. The single crystal silicon etching device according to claim 1, characterized in that: A plurality of material seats (35) are evenly distributed along the circumference of the connecting seat (34); the fixing ring (36) is inserted into the plurality of material seats (35); and the outer wall of the material seat (35) away from the connecting seat (34) is attached to and fixed to the inner wall of the fixing ring (36).

6. The single crystal silicon etching device according to claim 1, characterized in that: The air ring 2 (53) is fixedly connected to the air ring 1 (52), and the air ring 1 (52) is provided with a cavity 1 (521) and a through hole 1 (522). The cavity 1 (521) is connected to the air pump, and the through hole 1 (522) is connected to the cavity 1 (521). The air ring 2 (53) is provided with a cavity 2 (531), and the cavity 2 (531) is connected to the through hole 2 (532). The two ends of the through hole 1 (522) are respectively connected to the cavity 1 (521) and the cavity 2 (531). When the material holder (35) is transferred to the highest position, the air ring 2 (53) is located directly above the shaft (3), and the through hole 2 (532) is directly opposite to the channel 1 (352).

7. The single crystal silicon etching device according to claim 6, characterized in that: There are multiple through holes (522) and the diameter of through hole (522) gradually increases along the direction away from the end of the gas inlet cavity (521). There are multiple through holes (532) and the diameters are the same.

8. The single crystal silicon etching device according to claim 1, characterized in that: It also includes a cylinder (72), which can move axially along the shaft (3), and the cylinder (72) is provided with an opening. When the shaft (3) is transferred to the highest position, the opening of the cylinder (72) can be inserted into the material seat (35). The cylinder (72) is connected to a connecting pipe (73) on the side away from the opening, and the connecting pipe (73) is connected to a collecting barrel (74).

9. The single crystal silicon etching device according to claim 8, characterized in that: A driving component four (721) is installed on the inner wall of the bottom of the cylinder (72), and the output end of the driving component four (721) is fixedly connected to the push plate (722).

10. An etching method, using a single crystal silicon etching device according to any one of claims 1 to 9 to etch a crystalline silicon plate (4), characterized in that: The steps include: ① Feeding: the shaft body (3) rotates around the main shaft (1) to the upper limit position, and the shaft body (3) is driven to rotate around its own axis until one of the through grooves (361) is in an upward state, and the crystalline silicon plate (4) is placed from the top of the through groove (361), and the crystalline silicon plate (4) passes through the through groove (361) and falls into the first groove body (351), and the bottom inner wall of the first groove body (351) abuts against the crystalline silicon plate (4), and the second through hole (532) sprays gas to make the crystalline silicon plate (4) fall over, and the side of the crystalline silicon plate (4) away from the bottom inner wall of the first groove body (351) is offset from the through groove (361); ② Etching: the shaft body (3) rotates around the main axis (1) to the lower end limit position, driving the shaft body (3) to rotate around its own axis, and the fan blades (33) rotate to cause the etching fluid medium to flow. Under the action of the etching fluid medium flow, the surface of the crystalline silicon plate (4) is perpendicular to the flow direction of the etching fluid medium, and one side of the crystalline silicon plate (4) is impacted by the etching fluid medium; ③ Cleaning the plate surface etching medium: the shaft body (3) rotates around the main axis (1) to the upper limit position, the cylinder body (72) is inserted into the material seat (35), the shaft body (3) is driven to rotate around its own axis, and the through hole 2 (532) ejects gas. When the through hole 2 (532) is directly opposite to the channel 1 (352), the gas ejected from the through hole 2 (532) acts on the liquid medium on the surface of the crystalline silicon plate (4), so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind force generated by the rotation of the fan blades (33), the liquid medium in the form of small droplets is blown into the connecting pipe (73), and is re-polymerized into liquid in the connecting pipe (73) and gathered in the collecting barrel (74) for recovery; ④ Dropping: When the material seat (35) on the upper shaft (3) rotates to the lower end, the push plate (722) extends into the groove body (351) to push the crystalline silicon plate (4) toward the through groove (361), and the push plate (722) extends out of the groove body (351) to separate from the crystalline silicon plate (4), and the crystalline silicon plate (4) drops downward under the action of gravity.

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