Monocrystalline silicon sample corrosion device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a monocrystalline silicon sample corrosion device which comprises a chemical reaction machine, a chemical reaction tank is arranged on one side of the chemical reaction machine, a fixing part is arranged above the chemical reaction tank, and a control mechanism used for controlling the fixing part to ascend and descend is arranged on the chemical reaction machine. Two rotating rods are arranged on the fixing piece in a circumferential rotating mode or an axial sliding mode, and a plurality of supporting pieces used for containing crystals are installed on the outer surfaces of the two rotating rods. The device has the beneficial effects that the two rotating rods are used for controlling the plurality of crystals to perform reciprocating sliding while performing reciprocating swinging, so that firstly, the crystals are conveniently and accurately placed or taken out, and secondly, the contact area and frequency of the surfaces of the crystals and a chemical etching agent are greatly improved, so that the two adjacent crystals can press liquid to each other, and the working efficiency of the crystals is improved. The etching rate is accelerated, and small bubbles attached to the surface of the crystal can be promoted to automatically separate.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a single crystal silicon sample etching device. Background Art

[0002] Single crystal silicon wet etching is a micro-nano processing technology widely used in semiconductor manufacturing and other fields. When in use, the crystals are placed in the crystal boat in a set order, and then the crystals are driven by the crystal boat to immerse in a chemical reaction tank. The cavitation effect generated by the ultrasound can then form microscopic strong shock waves and high-speed jets, which act on the surface of the material, causing the dirt to be quickly crushed and peeled off, accelerating the reaction between the chemical etchant and the material surface, and thus completing the etching.

[0003] A wet etching cleaning device disclosed in Chinese patent publication number CN112635356A, in which the crystal is immersed in the agent from top to bottom, so that the dirt is quickly crushed and peeled off, and the reaction between the chemical etchant and the material surface is accelerated to complete the etching. However, compared with the prior art in the related field, firstly, since the existing crystals are densely distributed inside the crystal boat, the chemical liquid does not flow smoothly between the dense crystals, the liquid pressure changes little, and the scouring and penetration effect on the crystal surface is weak, the etching reaction proceeds relatively slowly, and the production efficiency is reduced. If the spacing between the crystals is increased, the production efficiency will also be reduced. At the same time, it is difficult for operators to accurately place or remove the crystals, which increases the difficulty and time of operation, and also increases the risk of damaging the crystals during the placement and removal process, reducing the work efficiency and product yield; secondly, the dense distribution makes the small bubbles generated on the crystal surface easier to adhere and difficult to detach. The small bubbles attached for a long time will form a local barrier layer on the crystal surface, making it difficult for the etchant to reach the area covered by the bubbles, thereby changing the direction and path of etching. This can cause etch pattern distortion, which can affect device performance and yield for high-precision etching processes such as microfabrication in semiconductor manufacturing. Summary of the invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art, solve the problems mentioned in the background technology, and provide a single crystal silicon sample etching device.

[0005] The object of the present invention is achieved by the following technical solutions: A single-crystal silicon sample etching device includes a chemical reaction machine. One side of the chemical reaction machine is provided with a chemical reaction tank. Above the chemical reaction tank is provided a fixing member. The chemical reaction machine is provided with a control mechanism for controlling the lifting of the fixing member. Two rotating rods are circumferentially rotated or axially slid on the fixing member. A plurality of supporting members for placing crystals are installed on the outer surfaces of the two rotating rods. The supporting members on the outer surfaces of the two rotating rods are arranged staggeredly; a driving component and a guiding component are arranged inside the fixing member. When the control mechanism controls the fixing member to reciprocate up and down inside the chemical reaction tank, the driving component is used to control the two rotating rods to rotate towards each other. When the two rotating rods rotate towards each other, the guiding component is used to control the two rotating rods to perform relative reciprocating sliding.

[0006] Further, the control mechanism includes a lifting rod arranged inside the chemical reaction machine. The top end of the lifting rod is fixedly installed with an arm. The fixing member is fixedly installed on the arm.

[0007] Further, the driving component includes a rack slidably arranged inside the fixing member. The rack has double-sided teeth. Gears are fixedly arranged at the positions of the two rotating rods corresponding to the rack. Both of the two gears are meshed with the rack.

[0008] Further, the top end of the rack is cooperatively connected with the top surface inside the fixing member through an elastic member.

[0009] Further, movable holes are respectively opened at the positions of the fixing member corresponding to the two rotating rods. A sliding groove is opened at the position of the bottom of the fixing member corresponding to the rack.

[0010] Further, the guiding component includes a fixing rod. Fixing rods are respectively fixedly arranged at the positions of the fixing member corresponding to the two gears. A rolling member is rotatably arranged at one end of the fixing rod close to the gear. A guiding groove is opened at the position of the gear corresponding to the rolling member. A groove cover is fixedly installed at the opening of the guiding groove.

[0011] Further, the shapes of the guiding groove and the groove cover are both arc-shaped. One side of the guiding groove facing the groove cover is an inclined surface. One side of the groove cover facing the guiding groove is an inclined surface. The inclined surface of the groove cover is opposite to the inclined surface of the guiding groove.

[0012] Further, the rolling member is a ball. A rotating hole is opened at one side of the rolling member located on the fixing rod. The fixing rod is cooperatively connected with the rotating hole through a bearing.

[0013] Further, the inclined surfaces of the guiding grooves of the two gears are arranged in opposite directions, so that the adjacent rotating rods can perform relative reciprocating sliding.

[0014] Further, the support member includes a fixing plate, a crystal holder is fixedly provided at the top of the fixing plate, the shape of the crystal holder is arc-shaped, and a placement groove is formed on the surface of the crystal holder away from the fixing plate.

[0015] The beneficial effects of the present invention are as follows: by setting the rotating rod, the support member, the driving component and the guiding component, two rotating rods are used to control a plurality of crystals to perform reciprocating swinging and reciprocating sliding at the same time. First, it is convenient to accurately place or take out the crystals. Second, it greatly increases the contact area and frequency between the crystal surface and the chemical etching agent. Thus, on one hand, adjacent crystals can press the liquid towards each other to accelerate the etching rate, and on the other hand, it can prompt the small bubbles attached to the crystal surface to automatically detach, avoiding problems such as uneven etching, changing the etching direction, affecting the surface roughness and material accumulation caused by long-term attachment of bubbles, ensuring the smooth progress of the etching process and the stability of the etching quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0017] Figure 1 The first axonometric structure diagram of the chemical reaction machine when the fixing member of the present invention is separated from the chemical reaction tank; Figure 2 The second axonometric structure diagram of the chemical reaction machine when the fixing member of the present invention is separated from the chemical reaction tank; Figure 3 The state diagram of the support member when the fixing member of the present invention is separated from the chemical reaction tank; Figure 4 The state diagram of the support arm when multiple support members of the present invention overlap; Figure 5 The state diagram when multiple support members of the present invention overlap; Figure 6 The state diagram of the support member when the rack completely enters the fixing member of the present invention; Figure 7 The structure diagram of the fixing member of the present invention; Figure 8 The structure diagram of the driving component of the present invention; Figure 9Schematic structural diagram of the support member of the present invention; Figure 10 For the present invention Figure 9 Enlarged schematic structural diagram of part A in the present invention; Figure 11 Schematic structural diagram of the guiding component of the present invention.

[0018] In the figure: 1, chemical reaction machine; 101, chemical reaction tank; 2, fixing member; 201, movable hole; 202, sliding groove; 3, control mechanism; 301, lifting rod; 302, support arm; 4, rotating rod; 5, support member; 501, fixing plate; 502, crystal holder; 503, placement groove; 6, driving component; 601, rack; 602, gear; 6021, guiding groove; 603, elastic member; 7, guiding component; 701, fixing rod; 702, rolling member; 703, groove cover. Detailed implementation manners

[0019] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0020] Additional aspects and advantages of the present invention will be further given in the following description in conjunction with the accompanying drawings, and some will become obvious from the following description, or will be understood through the practice of the present invention.

[0021] An embodiment of a single-crystal silicon sample etching device of the present invention, as Figures 1 to 11 shown, includes a chemical reaction machine 1. A chemical reaction tank 101 is provided on one side of the chemical reaction machine 1. A fixing member 2 is provided above the chemical reaction tank 101. A control mechanism 3 for controlling the lifting of the fixing member 2 is provided on the chemical reaction machine 1. Two rotating rods 4 are circumferentially rotated or axially slid on the fixing member 2. A plurality of support members 5 for placing crystals are installed on the outer surfaces of the two rotating rods 4. The support members 5 on the outer surfaces of the two rotating rods 4 are arranged staggeredly. The support member 5 includes a fixing plate 501. A crystal holder 502 is fixedly provided at the top of the fixing plate 501. The shape of the crystal holder 502 is arc-shaped. A placement groove 503 is formed on the surface of the crystal holder 502 away from the fixing plate 501; a driving component 6 and a guiding component 7 are provided inside the fixing member 2. When the control mechanism 3 controls the fixing member 2 to reciprocate up and down inside the chemical reaction tank 101, the driving component 6 is used to control the two rotating rods 4 to rotate in opposite directions. When the two rotating rods 4 rotate in opposite directions, the guiding component 7 is used to control the two rotating rods 4 to perform relative reciprocating sliding.

[0022] As Figure 1As shown in the figure, the control mechanism 3 includes a lifting rod 301 disposed inside the chemical reaction machine 1. A support arm 302 is fixedly installed at the top end of the lifting rod 301, and the fixing member 2 is fixedly installed on the support arm 302.

[0023] As Figure 8 shown, the driving assembly 6 includes a rack 601 slidably disposed inside the fixing member 2. The rack 601 has double-sided teeth. Gears 602 are fixedly provided at corresponding positions of the two rotating rods 4 with respect to the rack 601. Both of the two gears 602 are engaged with the rack 601. The top end of the rack 601 is cooperatively connected with the top surface inside the fixing member 2 through an elastic member 603 (the elastic member 603 is a spring). Activity holes 201 are formed at corresponding positions of the fixing member 2 with respect to the two rotating rods 4, and a sliding groove 202 is formed at the bottom of the fixing member 2 at a position corresponding to the rack 601. As Figures 1 to 8 shown, when the two rotating rods 4 drive a plurality of support members 5 into the chemical reaction tank 101, the rack 601 will contact the bottom of the chemical reaction tank 101, so as to control the two gears 602 to rotate in opposite directions by using the rack 601. Then, the two gears 602 will drive the two rotating rods 4 to rotate in opposite directions. Then, when the lifting rod 301 controls the support arm 302 and the fixing member 2 to move reciprocally, the two rotating rods 4 can drive a plurality of support members 5 to swing reciprocally (when the fixing member 2 moves downward, the rack 601 will contract into the fixing member 2 and compress the elastic member 603. When the fixing member 2 moves upward, the elastic force of the elastic member 603 gradually recovers, so as to promote the rack 601 to slide downward). When the two rotating rods 4 can drive a plurality of support members 5 to swing reciprocally, the contact area and frequency between the crystal surface and the chemical etchant are greatly increased, which helps to perform the etching reaction more evenly and fully, thereby improving the etching effect and etching uniformity and reducing the etching difference caused by uneven contact.

[0024] As Figures 8 to 11 shown, the guiding assembly 7 includes a fixing rod 701. Fixing rods 701 are fixedly provided at corresponding positions of the fixing member 2 with respect to the two gears 602. A rolling member 702 is rotatably provided at one end of the fixing rod 701 close to the gear 602. A guiding groove 6021 is formed at a position of the gear 602 corresponding to the rolling member 702. A groove cover 703 is fixedly installed at the opening of the guiding groove 6021. The shapes of the guiding groove 6021 and the groove cover 703 are both arc-shaped. The surface of the guiding groove 6021 facing the groove cover 703 is an inclined surface, and the surface of the groove cover 703 facing the guiding groove 6021 is an inclined surface. The inclined surface of the groove cover 703 is opposite to the inclined surface of the guiding groove 6021. As Figure 11 shown, the rolling member 702 is a ball. A rotating hole is formed at one side of the rolling member 702 located on the fixing rod 701. The fixing rod 701 is cooperatively connected with the rotating hole through a bearing. The inclined surfaces of the guiding grooves 6021 of the two gears 602 are arranged in opposite directions, so that the adjacent rotating rods 4 can perform relative reciprocating sliding. As Figures 3 to 6As shown, when the two gears 602 rotate in opposite directions, by utilizing the change in the position of the rolling elements 702 between the guiding grooves 6021 and the groove cover 703, the two rotating rods 4 drive a plurality of supporting members 5 to perform reciprocating axial sliding. Since the inclined surfaces of the guiding grooves 6021 of the two gears 602 are arranged in opposite directions, adjacent two crystals can press the liquid towards each other. Thus, this pressure change can not only enhance the scouring and penetration effects of the chemical liquid on the crystal surface, promote the etching reaction, accelerate the etching rate, and improve production efficiency, but also cause the small bubbles attached to the crystal surface to automatically detach, avoiding problems such as uneven etching, changing the etching direction, affecting surface roughness, and material accumulation caused by long-term attachment of bubbles, ensuring the smooth progress of the etching process and the stability of the etching quality.

[0025] A control system panel is provided on the chemical reaction machine 1. The contents involved in the control system panel are as follows: Reaction interface: the inlet and outlet liquid rates and volumes, the temperature and concentration of the reaction liquid, and the reaction working time; Ultrasonic cleaning interface: ultrasonic time, frequency, temperature, ultrasonic liquid input volume rate, and output rate, etc.; Cleaning and drying interface: the blowing volume and blowing time of the drying gas.

[0026] The chemical reaction machine 1 and the control mechanism 3 described in this application are both well-known technologies in the technical field, so their specific structures and working principles are not described in detail.

[0027] The working process is as follows: S1: As Figure 1 、 Figure 2 and Figure 9 shown, during use, the lifting rod 301 is used to control the lifting of the support arm 302 and the fixing member 2, so that the two rotating rods 4 drive a plurality of supporting members 5 to disengage from the chemical reaction tank 101; S2: As Figure 2 、 Figure 3 、 Figure 8 and Figure 9 shown, when the two rotating rods 4 drive a plurality of supporting members 5 to disengage from the chemical reaction tank 101, the elastic member 603 is no longer compressed, which prompts the rack 601 to slide downward. Then, the two gears 602 are controlled to rotate in opposite directions by using the rack 601. After that, the two gears 602 drive the two rotating rods 4 to rotate in opposite directions, causing adjacent two supporting members 5 to be misaligned; S3: As Figure 2 、 Figure 3 and Figure 9As shown, after several support members 5 are offset, it enables the operator to more conveniently and accurately place the crystal into the placement groove 503 of the crystal holder 502, or easily remove the crystal from the placement groove 503 of the crystal holder 502 after etching is completed, reducing the operation difficulty and time, improving work efficiency, and also reducing the risk of damaging the crystal during the picking and placing process; S4: As Figure 2 、 Figure 4 and Figure 9 shown, after the crystal is placed, the lifting rod 301 is used to control the support arm 302 and the fixing member 2 to descend, so that the two rotating rods 4 drive several support members 5 into the chemical reaction tank 101; S5: As Figure 4 and Figure 9 shown, after the two rotating rods 4 drive several support members 5 into the chemical reaction tank 101, the ultrasonic function and heating function of the chemical reaction machine 1 are turned on; S6: As Figure 3 、 Figure 4 、 Figure 5 、 Figure 6 、 Figure 8 and Figure 9 shown, after the two rotating rods 4 drive several support members 5 into the chemical reaction tank 101, the rack 601 will contact the bottom of the chemical reaction tank 101, so as to control the two gears 602 to rotate in opposite directions by using the rack 601. Then, the two gears 602 will drive the two rotating rods 4 to rotate in opposite directions. Then, when the lifting rod 301 controls the support arm 302 and the fixing member 2 to move reciprocally, the two rotating rods 4 can drive several support members 5 to swing reciprocally; S7: As Figure 3 、 Figure 4 、 Figure 5 、 Figure 6 、 Figure 8 and Figure 9 shown, when the two rotating rods 4 can drive several support members 5 to swing reciprocally, it greatly increases the contact area and frequency between the crystal surface and the chemical etching agent, helps to perform the etching reaction more evenly and fully, thereby improving the etching effect and etching uniformity, and reducing the etching difference caused by uneven contact; S8: As Figure 3 、 Figure 6 、 Figure 8 、 Figure 9 、 Figure 10 and Figure 11As shown, when the two gears 602 rotate in opposite directions, by utilizing the position change of the rolling elements 702 between the guiding grooves 6021 and the groove cover 703, the two rotating rods 4 drive a plurality of supporting members 5 to perform reciprocating axial sliding. Moreover, since the inclined surfaces of the guiding grooves 6021 of the two gears 602 are arranged in opposite directions, adjacent two crystals can press the liquid towards each other. Thus, this pressure change can not only enhance the scouring and penetration effects of the chemical liquid on the crystal surface, promote the etching reaction, accelerate the etching rate, and improve the production efficiency, but also cause the small bubbles attached to the crystal surface to automatically detach, avoiding problems such as uneven etching, changing the etching direction, affecting the surface roughness, and material accumulation caused by long-term attachment of bubbles, ensuring the smooth progress of the etching process and the stability of the etching quality; S9: After the crystal etching is completed, by repeating the steps of S1 to S3, the crystal can be easily taken out from the placement groove 503 of the crystal holder 502.

[0028] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A single crystal silicon sample etching device, characterized in that: The invention comprises a chemical reactor (1), wherein a chemical reaction tank (101) is provided on one side of the chemical reactor (1), a fixing member (2) is provided above the chemical reaction tank (101), a control mechanism (3) for controlling the lifting and lowering of the fixing member (2) is provided on the chemical reactor (1), two rotating rods (4) are provided on the fixing member (2) for circumferential rotation or axial sliding, a plurality of supporting members (5) for placing crystals are installed on the outer surfaces of the two rotating rods (4), and the supporting members (5) on the outer surfaces of the two rotating rods (4) are arranged in a staggered manner; A driving component (6) and a guiding component (7) are provided inside the fixing member (2). When the control mechanism (3) controls the fixing member (2) to move up and down reciprocatingly inside the chemical reaction tank (101), the driving component (6) is used to control the two rotating rods (4) to rotate in opposite directions. When the two rotating rods (4) rotate in opposite directions, the guiding component (7) is used to control the two rotating rods (4) to slide back and forth relative to each other.

2. The single crystal silicon sample etching device according to claim 1, characterized in that: The control mechanism (3) comprises a lifting rod (301) arranged inside the chemical reactor (1), a support arm (302) being fixedly mounted on the top end of the lifting rod (301), and the fixing member (2) being fixedly mounted on the support arm (302).

3. The single crystal silicon sample etching device according to claim 1, characterized in that: The driving assembly (6) comprises a rack (601) slidably arranged inside the fixing member (2), the rack (601) having double-sided meshing teeth, and two gears (602) are fixedly arranged at positions of the two rotating rods (4) corresponding to the rack (601), and the two gears (602) are meshed with the rack (601).

4. The single crystal silicon sample etching device according to claim 3, characterized in that: The top end of the rack (601) is connected to the top surface inside the fixing member (2) via an elastic member (603).

5. The single crystal silicon sample etching device according to claim 3, characterized in that: The fixing member (2) is provided with movable holes (201) at positions corresponding to the two rotating rods (4), and the bottom of the fixing member (2) is provided with a sliding groove (202) at a position corresponding to the rack (601).

6. The single crystal silicon sample etching device according to claim 3, characterized in that: The guide assembly (7) comprises a fixing rod (701), the fixing rod (701) being fixedly provided at the positions of the fixing member (2) corresponding to the two gears (602), a rolling member (702) being rotatably provided at one end of the fixing rod (701) close to the gear (602), a guiding groove (6021) being provided at the position of the gear (602) corresponding to the rolling member (702), and a groove cover (703) being fixedly installed at the opening of the guiding groove (6021).

7. The single crystal silicon sample etching device according to claim 6, characterized in that: The guide groove (6021) and the groove cover (703) are both arc-shaped, one side of the guide groove (6021) facing the groove cover (703) is an inclined surface, and one side of the groove cover (703) facing the guide groove (6021) is an inclined surface, and the inclined surface of the groove cover (703) is opposite to the inclined surface of the guide groove (6021).

8. The single crystal silicon sample etching device according to claim 7, characterized in that: The rolling element (702) is a ball bearing, and a rotation hole is provided on one side of the rolling element (702) located on the fixing rod (701), and the fixing rod (701) is connected to the rotation hole through a bearing.

9. The single crystal silicon sample etching device according to claim 7, characterized in that: The inclined surfaces of the guide grooves (6021) of the two gears (602) are arranged opposite to each other, so that the adjacent rotating rods (4) can perform relative reciprocating sliding.

10. The single crystal silicon sample etching device according to claim 1, characterized in that: The support member (5) comprises a fixing plate (501), a top end of which is fixedly provided with a crystal holder (502), the shape of the crystal holder (502) being arc-shaped, and a placement groove (503) being formed on a side of the crystal holder (502) away from the fixing plate (501).

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