Thin film probe assembly, device and method with high spatial resolution and high frequency response

Abstract

The invention discloses a high-spatial-resolution and high-frequency-response thin film probe assembly, device and method, and the assembly comprises a ceramic housing which is provided with a magnetic probe array on the side surface; the magnetic probe array comprises a plurality of magnetic probes; and each magnetic probe is a nano-film probe manufactured in a film coating mode and is adhered to each side surface of the ceramic shell through ceramic glue. The measuring device comprises a film probe assembly used for measuring axial and angular magnetic field parameters; a vertical guide pipe is arranged at the bottom of the ceramic shell; the supporting device is used for installing the film probe assembly; an SMA interface is arranged in the supporting device, and two ends of an outgoing line of each magnetic probe in the film probe assembly penetrate through the vertical conduit to be connected with the SMA interface; and the lifting device is used for adjusting the height of the supporting device, so that the magnetic probe moves along the radial direction. The magnetic field parameter and the wave number can be measured, and the spatial resolution and the frequency response in plasma diagnosis are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of radio frequency parameter measurement, and particularly to a thin film probe assembly, device and method with high spatial resolution and high frequency response. Background Art

[0002] In radio frequency (RF) plasma discharges, many important plasma parameters (such as electron density, electron temperature, electron and ion energy distributions) are to some extent determined by the electromagnetic fields of RF plasma sources. The analytical measurement of RF waves in space includes magnetic fields and wave numbers, which is very important for understanding the spatial distribution of plasmas. In recent decades, several techniques have been reported (such as the Hall effect, Faraday rotation effect, motional Stark effect, and diamond NV color center measurement). Most of the above techniques only measure the magnetic field amplitude and wave information cannot be obtained. Therefore, magnetic probes still show unique advantages in terms of the applicability, economy, and practical convenience of plasma diagnostics under various working conditions.

[0003] At present, although magnetic field parameters and wave information can be measured, their magnetic probes are all made of enameled wires wound by hand. The problem of inaccurate manufacturing accuracy makes it difficult to achieve large-scale production of magnetic probes, which in turn hinders the magnetic probes in plasmas from having a greater time response. In addition, the large spatial size of the manually wound probes makes it difficult to further improve their spatial resolution in plasma diagnostics.

[0004] In view of this, the present application is specifically proposed. Summary of the Invention

[0005] The technical problem to be solved by the present invention is that traditional magnetic probes in existing measurement technologies are all made of enameled wires wound by hand. The problem of inaccurate manufacturing accuracy makes it difficult to achieve large-scale production of magnetic probes, which in turn hinders the magnetic probes in plasmas from having a greater time response. In addition, the large spatial size of the manually wound probes makes it difficult to further improve their spatial resolution in plasma diagnostics. The purpose of the present invention is to provide a thin film probe assembly, device and method with high spatial resolution and high frequency response. By designing a thin film probe to replace the traditional magnetic probe made of enameled wires wound by hand and using a thin film probe array device for measurement, not only can magnetic field parameters and wave numbers be measured, but also their spatial resolution and frequency response in plasma diagnostics are further improved.

[0006] The present invention is achieved by the following technical solutions:

[0007] In a first aspect, the present invention provides a thin film probe assembly with high spatial resolution and high frequency response, and the thin film probe assembly includes:

[0008] A ceramic housing, on the side of which a magnetic probe array is provided;

[0009] A magnetic probe array includes a plurality of magnetic probes; each magnetic probe is a nano-film probe fabricated by a coating method and is bonded to the respective sides of a ceramic housing by a high-temperature resistant ceramic adhesive.

[0010] The present invention designs a thin-film probe assembly composed of novel magnetic probes. The magnetic probes are nano-film probes fabricated by a coating method, rather than magnetic probes with enameled wires or copper wires hand-wound in a traditional way. During use, the thin-film probe assembly is mounted on a stainless-steel rod. A lifting device is provided at the lower part of the stainless-steel rod to adjust its height and the radial position movement of the magnetic probes. The four magnetic probes are pairwise orthogonal and are sensitive to incoming waves in their respective directions, capable of measuring incoming waves in two directions in the plasma. The interval between each magnetic probe is determined by the ceramic housing, so that the actual wave number of the wave to be measured can be measured.

[0011] Further, the ceramic housing is a hollow cubic housing, which is convenient for protecting the magnetic probe array.

[0012] Further, the magnetic probes in the magnetic probe array intersect pairwise and are respectively used for measuring incoming waves in two directions, namely the axial direction and the angular direction, in the plasma.

[0013] Further, the side length of the ceramic housing is determined by the wavelength of the electromagnetic wave to be measured and is usually less than one wavelength.

[0014] Further, the preparation process of the magnetic probe is as follows:

[0015] Deposit a metal thin-film material with a predetermined thickness on the surface of a substrate, and transfer a preset pattern from a photomask to a photoresist;

[0016] Use chemical etching to erode and dissolve the unprotected areas of the photoresist, thereby transferring the preset pattern on the photoresist to the substrate to form a single magnetic probe.

[0017] Further, the thickness of the substrate is 0.5 mm; the predetermined thickness of the metal film material is 500 nm; the side length of the ceramic housing is 10 mm.

[0018] Further, the magnetic probe is in the shape of an ohm (Ω shape, i.e., the shape of the omega symbol), and lead wires are provided at both ends of the bottom.

[0019] Further, the inner diameter of the magnetic probe is 9 mm.

[0020] In a second aspect, the present invention further provides a measuring device for a thin-film probe assembly with high spatial resolution and high frequency response. The measuring device includes:

[0021] A thin film probe assembly, using the above-mentioned thin film probe assembly with high spatial resolution and high frequency response, is used to measure axial and angular magnetic field parameters; a vertical conduit is provided at the bottom of the ceramic housing;

[0022] A support device for installing the thin film probe assembly; an SMA interface is provided in the support device, and both ends of the lead wire of each magnetic probe in the thin film probe assembly pass through the vertical conduit and are connected to the SMA interface;

[0023] A lifting device for adjusting the height of the support device to move the magnetic probe radially.

[0024] In a third aspect, the present invention further provides a measurement method for a thin film probe measurement device with high spatial resolution and high frequency response. This measurement method uses the above-mentioned measurement device for measurement; this measurement method includes:

[0025] S1: When the magnetic probe detects a voltage signal, calculate the phase difference by using the time difference Δt and the discharge frequency ω between the voltage signals measured by any two magnetic probes in the same direction in the thin film probe assembly

[0026] S2: Calculate the wave number k of the magnetic probe array according to the side length of the ceramic housing and the phase difference Calculate the wave number k of the magnetic probe array;

[0027] S3: Calculate the magnetic field signal intensity B according to the area A of one magnetic probe in the magnetic probe array.

[0028] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0029] 1. For the thin film probe assembly, device and method with high spatial resolution and high frequency response of the present invention, the present invention designs a thin film probe to replace the traditional magnetic probe made of manually wound enameled wire, and uses the thin film probe array device for measurement, which can not only measure magnetic field parameters and wave numbers, but also further improve its spatial resolution and frequency response in plasma diagnosis.

[0030] 2. Place the measurement device in the vacuum chamber of the tokamak device, and measure the incoming waves in two directions in the plasma through any two magnetic probes in the same direction in the magnetic probe array to measure the actual wave number and magnetic field signal intensity of the wave to be measured. The measurement device of the present invention has a simple structure, can measure magnetic field parameters and wave numbers, and has extremely high spatial resolution and extremely high frequency response due to small resistance and inductance parameters and small probe size. Description of the Drawings

[0031] The drawings described herein are used to provide a further understanding of the embodiments of the present invention, form a part of this application, and do not limit the embodiments of the present invention. In the drawings:

[0032] Figure 1 Schematic diagram of the structure of a single magnetic probe of the present invention;

[0033] Figure 2 Schematic diagram of the structure of a thin film probe assembly with high spatial resolution and high frequency response of the present invention;

[0034] Figure 3 Schematic diagram of the structure of a measuring device for a thin film probe assembly with high spatial resolution and high frequency response of the present invention;

[0035] Figure 4 Flow chart of the measuring method of the thin film probe measuring device with high spatial resolution and high frequency response of the present invention.

[0036] Reference numerals and corresponding component names:

[0037] 1 - Ceramic housing, 2 - Magnetic probe, 3 - Substrate, 4 - Thin film probe assembly, 5 - Support device, 6 - Lifting device, 7 - Vertical conduit, 8 - SMA interface. Detailed implementation manners

[0038] In the following, the term "comprise" or "may comprise" that may be used in various embodiments of the present invention indicates the presence of the functions, operations or elements of the present invention, and does not limit the addition of one or more functions, operations or elements. In addition, as used in various embodiments of the present invention, the terms "comprise", "have" and their cognates are only intended to represent specific features, numbers, steps, operations, elements, components or combinations of the foregoing items, and should not be construed as precluding the existence or addition of the possibility of one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing items.

[0039] In various embodiments of the present invention, the expression "or" or "at least one of A or / and B" includes any combination or all combinations of the recited words. For example, the expression "A or B" or "at least one of A or / and B" may include A, may include B, or may include both A and B.

[0040] Expressions (such as "first", "second", etc.) used in various embodiments of the present invention may modify various components in various embodiments, but do not limit the corresponding components. For example, the above expressions do not limit the order and / or importance of the components. The above expressions are only used for the purpose of distinguishing one component from other components. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, without departing from the scope of various embodiments of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

[0041] It should be noted that: If a description "connects" one component to another component, the first component can be directly connected to the second component, and a third component can be "connected" between the first component and the second component. Conversely, when a component is "directly connected" to another component, it can be understood that there is no third component between the first component and the second component.

[0042] The terms used in various embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the various embodiments of the present invention. As used herein, the singular form is intended to also include the plural form unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the various embodiments of the present invention pertain. The terms (such as those defined in a commonly used dictionary) will be interpreted as having the same meaning as their contextual meaning in the relevant technical field and will not be interpreted as having an idealized meaning or an overly formal meaning unless clearly defined in the various embodiments of the present invention.

[0043] To make the objectives, technical solutions and advantages of the present invention more clear and understandable, the present invention will be further described in detail below in conjunction with embodiments and drawings. The illustrative embodiments and descriptions of the present invention are only used to explain the present invention and do not serve as a limitation to the present invention.

[0044] Although the patent document with the publication number CN118591068A can measure magnetic field parameters and wave information, its magnetic probe is made of hand-wound enameled wire. The problem of inaccurate manufacturing accuracy makes it difficult to achieve large-scale production of magnetic probes, which in turn hinders the magnetic probe in the plasma from having a greater time response. In addition, the large spatial size of the hand-wound probe makes it difficult to further improve its spatial resolution in plasma diagnostics. Therefore, improving manufacturing accuracy, reducing the probe size, and enriching the measurement size will help improve the reliability and accuracy of the magnetic probe in plasma diagnostics.

[0045] Therefore, the present invention designs a thin-film probe to replace the traditional magnetic probe made of hand-wound enameled wire, and uses a thin-film probe array device for measurement, which can not only measure magnetic field parameters and wave numbers, but also further improve its spatial resolution and frequency response in plasma diagnostics.

[0046] Example 1

[0047] As Figure 1 and Figure 2 shown, the thin-film probe assembly with high spatial resolution and high frequency response of the present invention, the thin-film probe assembly includes:

[0048] A ceramic housing 1, on the side of which a magnetic probe array is provided;

[0049] The magnetic probe array includes a number of magnetic probes 2; each magnetic probe 2 is a nano-film probe made by a coating method and is bonded to the respective sides of the ceramic housing 1 through a high-temperature resistant ceramic adhesive.

[0050] In this embodiment, the ceramic housing 1 is a hollow cubic housing. The setting of the ceramic housing 1 is to prevent the direct contact between the magnetic probes and the plasma, which is convenient for protecting the magnetic probe array.

[0051] In this embodiment, adjacent magnetic probes 2 in the magnetic probe array intersect pairwise and are sensitive to the incoming waves in their respective directions, and are used to measure the incoming waves in two directions in the plasma; the interval between each magnetic probe 2 is determined by the hollow cubic housing, so that the actual wave number of the wave to be measured can be measured.

[0052] In this embodiment, the side length of the ceramic housing 1 is determined by the wavelength of the electromagnetic wave to be measured, and is usually less than one wavelength.

[0053] In this embodiment, the preparation process of the magnetic probe 2 is as follows:

[0054] Deposit a metal thin film material with a predetermined thickness on the surface of the substrate 3, and transfer a preset pattern (for example, in the present invention, an ohmic shape pattern, that is, a pattern in the shape of an omega symbol) from the photomask to the photoresist;

[0055] Use chemical etching to erode and dissolve the unprotected areas of the photoresist, so as to transfer the preset pattern on the photoresist to the substrate to form a single magnetic probe 2.

[0056] In this embodiment, the thickness of the substrate 3 is 0.5 mm; the predetermined thickness of the metal film material is 500 nm; the side length of the ceramic housing 1 is 10 mm; the inner diameter of the magnetic probe 2 is 9 mm.

[0057] Figure 1 is a schematic structural diagram of a single magnetic probe 2 with an omega shape and coated film, Figure 1 The two bottom squares of the single magnetic probe 2 in are used to lead out the induced voltage signal based on the lead wires; Figure 2 is a schematic structural diagram of the thin film probe assembly, that is, formed by bonding four magnetic probes 2 to the respective sides of the ceramic housing 1 through a high-temperature resistant ceramic adhesive.

[0058] When specifically implemented, the production of the 500-nm nano-film probe is as follows:

[0059] (1) Evacuate the air

[0060] Close the vacuum chamber door, turn on the pumping system, record the parameters of the vacuum pumping system, and check whether the pumping system and the vacuum chamber sealing system are normal.

[0061] (2) Plasma cleaning

[0062] Glow cleaning: When the vacuum is better than 8×10 -4 Pa, introduce Ar gas (Ar~30sccm) into the vacuum chamber, and turn on the Hall ion source to start glow cleaning. The parameter settings are: working pressure: 0.2Pa; voltage: 800V; duty cycle: 10%; time: 5min.

[0063] (3) Deposit Ag film

[0064] Turn on the rotation of the workpiece holder to make the workpiece rotate self - clockwise facing the Ag target, and turn on the magnetron power supply. Working pressure: 0.2Pa; current: 200mA; time: 7min.

[0065] (4) End of coating deposition

[0066] Turn off the magnetron power supply, rotation system power supply, gas inlet system, high - vacuum system, and stop the pumping system in sequence.

[0067] The thin - film probe assembly is fabricated by bonding a single magnetic probe to four faces of a ceramic cube with a set side length (it should be noted here that the side length of the ceramic cube is determined by the wavelength of the electromagnetic wave to be measured, usually less than one wavelength) using a high - temperature - resistant ceramic adhesive.

[0068] The present invention designs a thin - film probe assembly composed of a novel magnetic probe. The magnetic probe of the present invention is not a magnetic probe made by manually winding enameled wire or copper wire in the traditional way, but a nano - thin - film probe fabricated by a coating method, which avoids the uncertainty and error brought by manual operation; the prior art measures in the same direction (axial direction), but can decouple two incoming waves (fast wave / slow wave) in the axial direction; while the focus of the present invention is to first propose a scheme to replace the traditional enameled - wire - wound coil with a metal thin - film. After testing, compared with the traditional scheme, the resistance / reactance of this scheme is greatly reduced, and the frequency response range is improved, broadening the application scenarios.

[0069] When in use, install the thin - film probe assembly on a stainless - steel rod. There is a lifting device at the lower part of the stainless - steel rod to adjust its height and the radial position movement of the magnetic probe. The four magnetic probes are pairwise orthogonal and are sensitive to the incoming waves in their respective directions, and can measure the incoming waves in two directions in the plasma. The interval between each magnetic probe is determined by the ceramic shell, so that the actual wave number of the wave to be measured can be measured.

[0070] Example 2

[0071] As Figure 3As shown, the difference between this embodiment and Embodiment 1 is that this embodiment provides a measuring device for a thin-film probe assembly with high spatial resolution and high frequency response. The measuring device includes:

[0072] A thin-film probe assembly 4, using the thin-film probe assembly with high spatial resolution and high frequency response of Embodiment 1, for measuring axial and angular magnetic field parameters; a vertical conduit 7 is provided at the bottom of the ceramic housing 1;

[0073] A support device 5 for installing the thin-film probe assembly; an SMA interface 8 is provided in the support device 5, and both ends of the lead-out wire of each magnetic probe 2 in the thin-film probe assembly 4 pass through the vertical conduit 7 and are connected to the SMA interface 8;

[0074] A lifting device 6 for adjusting the height of the support device 5 to move the magnetic probe 2 in the radial direction.

[0075] As a further implementation, the lifting device 6 is an electric telescopic rod, and a screw connection end is provided at the end of the electric telescopic rod. A connection ring is provided at the lower end of the support device 5, and the connection ring is threadedly connected to the screw connection end. The lifting device can be realized by using an existing electric telescopic rod, and will not be elaborated here one by one.

[0076] During use, place the measuring device in the vacuum chamber of the tokamak device, and measure the incoming waves in two directions in the plasma through the four magnetic probes 2 to measure the actual wave number and magnetic field signal strength of the wave to be measured. The measuring device of the present invention has a simple structure, can measure magnetic field parameters and wave numbers, and due to small resistance and inductance parameters and small probe size, has extremely high spatial resolution and extremely high frequency response.

[0077] At the same time, the present invention also provides a measuring method for a thin-film probe measuring device with high spatial resolution and high frequency response. The measuring method uses the above-mentioned measuring device for measurement; as Figure 4 shown, the steps of the measuring method include:

[0078] S1: When the magnetic probe 2 detects a voltage signal, use the time difference Δt and the discharge frequency ω existing between the voltage signals measured by any two magnetic probes 2 in the same direction in the thin-film probe assembly 4 to calculate the phase difference

[0079]

[0080] S2: Calculate the wave number k of the thin-film probe assembly 4 according to the side length of the ceramic housing 1 and the phase difference ;

[0081]

[0082] S3: Calculate the magnetic field signal strength B according to the area A of one magnetic probe 2 in the thin-film probe assembly 4.

[0083]

[0084] V = -AωBωcosωt;

[0085] Wherein, V is the voltage signal measured by the magnetic probe, ω is the discharge frequency, E is the plasma electric field, s is the integrated curve, and t is the time.

[0086] The height of the present invention is adjusted by a lifting device, and the position of the probe moves radially. The four magnetic probes of a thin film probe assembly 4 are orthogonal to each other in pairs, sensitive to the incoming waves in their respective directions, and can measure the axial and angular magnetic field parameters in the plasma. The interval between each magnetic probe is determined by a ceramic cube, so that the actual wave number of the wave to be measured can be measured.

[0087] The specific embodiments described above further elaborate on the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only the specific embodiments of the present invention and is not used to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A thin film probe assembly with high spatial resolution and high frequency response, characterized in that: The thin film probe assembly includes: A ceramic housing (1) having a magnetic probe array disposed on its side; The magnetic probe array comprises a plurality of magnetic probes (2); each magnetic probe (2) is a nano-thin film probe manufactured by coating, and is bonded to each side surface of the ceramic shell (1) by ceramic glue.

2. The thin film probe assembly with high spatial resolution and high frequency response according to claim 1, characterized in that: The ceramic shell (1) is a hollow cubic shell.

3. The thin film probe assembly with high spatial resolution and high frequency response according to claim 2, characterized in that: The magnetic probes (2) in the magnetic probe array intersect with each other in pairs and are respectively used to measure incoming waves in the axial and angular directions in the plasma.

4. The thin film probe assembly with high spatial resolution and high frequency response according to claim 2, characterized in that: The side length of the ceramic housing (1) is determined by the wavelength of the electromagnetic wave to be measured.

5. The thin film probe assembly with high spatial resolution and high frequency response according to claim 1, characterized in that: The preparation process of the magnetic probe (2) is as follows: Depositing a layer of metal thin film material with a predetermined thickness on the surface of the substrate (3) to transfer a preset pattern from the photoresist to the photoresist; Chemical etching is used to corrode and dissolve the unprotected area of ​​the photoresist, thereby transferring the preset pattern on the photoresist to the substrate to form a single magnetic probe (2).

6. The thin film probe assembly with high spatial resolution and high frequency response according to claim 5, characterized in that: The thickness of the substrate (3) is 0.5 mm; the predetermined thickness of the metal film material is 500 nm.

7. The thin film probe assembly with high spatial resolution and high frequency response according to claim 5, characterized in that: The magnetic probe (2) is ohmic in shape, and lead wires are arranged at both ends of the bottom; the inner diameter of the magnetic probe (2) is 9 mm.

8. The thin film probe assembly with high spatial resolution and high frequency response according to claim 2, characterized in that: The side length of the ceramic housing (1) is 10 mm.

9. The measuring device of the thin film probe assembly with high spatial resolution and high frequency response according to any one of claims 1 to 8, characterized in that: The measuring device comprises: A thin film probe assembly (4), using a thin film probe assembly with high spatial resolution and high frequency response as claimed in any one of claims 1 to 8, for measuring axial and angular magnetic field parameters; a vertical guide tube (7) is provided at the bottom of the ceramic housing (1); A support device (5) for mounting the thin film probe assembly; an SMA interface (8) is provided in the support device (5), and both ends of the lead wire of each magnetic probe (2) in the thin film probe assembly (4) pass through the vertical guide tube (7) and are connected to the SMA interface (8); The lifting device (6) is used to adjust the height of the supporting device (5) so that the magnetic probe (2) moves in the radial direction.

10. A measurement method for a thin film probe measurement device with high spatial resolution and high frequency response, characterized in that: The measuring method uses the measuring device as claimed in claim 9 to perform the measurement; the measuring method comprises: S1: when the magnetic probe (2) detects a voltage signal, the phase difference is calculated using the time difference and discharge frequency between the voltage signals measured by any two magnetic probes (2) in the same direction in the thin film probe assembly (4); S2: calculating the wave number of the magnetic probe array according to the side length of the ceramic shell (1) and the phase difference; S3: Calculating the magnetic field signal strength according to the area of ​​a magnetic probe (2) in the magnetic probe array.

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