Semiconductor processing reaction cavity, preparation method thereof and semiconductor processing equipment

Abstract

The invention relates to the technical field of semiconductor processing, and provides a semiconductor processing reaction cavity, a preparation method thereof and semiconductor processing equipment. The semiconductor processing reaction cavity comprises a cavity side wall and a magnetic protection layer, and the magnetic protection layer is located on the inner surface of the cavity side wall. The magnetic protection layer comprises a magnetic traction part and a protection part, the magnetic traction part is located in the protection part, the protection part is used for protecting the side wall of the cavity, the magnetic traction part is used for attracting at least one free radical overflowing from the plasma group to move towards the side wall of the cavity, and at least two free radicals react to generate gas and form gas flow; the airflow can drive the polymer particles to move. In the application, the magnetic traction part can attract the free radicals separated from the plasma group in the electric field and enable the free radicals to react to generate the airflow towards the side wall of the cavity, and the airflow can wrap the polymer particles to move, so that the deposition of the polymer particles generated in the semiconductor processing process on the side wall of the cavity can be reduced, the cost can be reduced, and the productivity can be improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a semiconductor processing reaction chamber, a preparation method thereof, and a semiconductor processing device. Background Art

[0002] Dry etching machines, ion implanters, chemical vapor deposition equipment, and semiconductor processing reaction chambers are important semiconductor manufacturing equipment used in integrated circuit manufacturing processes. During the manufacturing process of semiconductors, after introducing process gases into the semiconductor processing reaction chamber, a radio frequency field is applied through the upper electrode in the semiconductor processing reaction chamber, causing the process gases to be plasmaized to form plasma clusters. Under the action of the plasma clusters, the process gases etch the wafer to obtain the target semiconductor. During this manufacturing process, etching by-products (polymer particles) of photoresist and various oxide film layers involved in the structure are inevitably deposited on the upper electrode, electrostatic chuck (lower electrode), and sidewall of the chamber, changing the chamber environment and resulting in differences in the etching environment for different wafers in the semiconductor processing reaction chamber. When the subsequent wafer is etched, it is affected by the environmental changes caused by the etching of the previous wafer, resulting in performance deviations.

[0003] To reduce the influence of the environment in the semiconductor processing reaction chamber on the etching accuracy of the wafer to be processed, usually before etching the first wafer, a warm-up wafer is first enabled for pre-chip cleaning, and inter-chip cleaning is enabled after the etching of the previous wafer to ensure that the next wafer to be processed is etched after the inter-chip cleaning is completed. However, the influence of different wafers on the chamber environment after etching is different, making it difficult to perform inter-chip cleaning according to a unified regulation. Separately setting the inter-chip cleaning process after etching each wafer not only increases the workload but also is not conducive to improving production capacity.

[0004] Therefore, it is necessary to provide a new semiconductor processing reaction chamber, a preparation method thereof, and a semiconductor processing device to solve the above problems existing in the prior art. Summary of the Invention

[0005] The purpose of the present application is to provide a semiconductor processing reaction chamber, a preparation method thereof, and a semiconductor processing device, which can reduce the deposition of polymers generated during the semiconductor processing on the sidewall of the chamber, and thus can reduce costs and improve production capacity.

[0006] According to the first aspect of the embodiments of the present application, a semiconductor processing reaction chamber is provided. The semiconductor processing reaction chamber includes a chamber sidewall and a magnetic protection layer, and the magnetic protection layer is located on the inner surface of the chamber sidewall; The magnetic protection layer includes a magnetic traction part and a protection part. The magnetic traction part is located in the protection part. The protection part is used to protect the side wall of the cavity. The magnetic traction part is used to attract at least one kind of free radical overflowing in the plasma cluster to move towards the side wall of the cavity. At least two of the free radicals react to generate gas and form an air flow, and the air flow can drive the movement of polymer particles.

[0007] By adopting the above technical solution, due to the ferromagnetic property and ferromagnetic resonance effect of the magnetic traction part in the magnetic protection layer, it can attract free radicals in the electric field, so that the free radicals overflowing after breaking away from the plasma cluster approach the side wall of the cavity and move towards the magnetic traction part. As the overflowing free radicals react with each other, an air flow is formed along the side wall of the cavity. These gases will entrain the polymer particles located near the side wall of the cavity and then be sucked away by the air pump. Therefore, by setting the magnetic traction part, it is possible to clean the side wall of the cavity while etching, thereby avoiding the deposition of polymer particles brought by the etching process on the side wall of the cavity, ensuring that the cavity environment of the side wall of the cavity does not change significantly before and after etching, reducing the impact of wafer etching on the semiconductor processing reaction chamber, and improving the accuracy when etching the next wafer. In summary, the technical solution provided by the present application can reduce the deposition of polymer particles generated during the semiconductor processing on the side wall of the chamber. Furthermore, it can reduce costs and increase production capacity.

[0008] Optionally, the surface of the side of the magnetic protection layer away from the side wall of the cavity is flat.

[0009] Optionally, the magnetic traction part is embedded in the protection part, and the surface of the side of the magnetic traction part away from the side wall of the cavity is exposed from the protection part.

[0010] Optionally, the magnetic traction part includes at least one magnetic traction element, and the cross-section of the magnetic traction element has a preset pattern, and each preset pattern is used to guide the movement direction of the air flow after reaching the side wall of the cavity.

[0011] Optionally, the preset pattern is a ring or a solid circle.

[0012] Optionally, the protection part further includes a first protection layer and a second protection layer. The first protection layer is located on the inner surface of the side wall of the cavity, and the second protection layer is located on the side of the first protection layer away from the side wall of the cavity. The magnetic traction part is embedded in the second protection layer, and the surface of the side of the magnetic traction part away from the side wall of the cavity is exposed from the second protection layer. Preferably, the thickness of the magnetic traction part accounts for 20 - 30% of the thickness of the magnetic protection layer.

[0013] Optionally, the magnetic traction part includes magnetic traction particles, and the magnetic traction particles are mixed in the protection part.

[0014] Optionally, the material of the magnetic traction part includes nickel, and the material of the protection part includes Y 2 O 3 .

[0015] Optionally, the thickness of the magnetic traction part is 1-4 mm.

[0016] Optionally, the semiconductor processing reaction chamber further includes a chamber bottom plate, a chamber top cover, a carrying mechanism, and an electrostatic chuck; The chamber side wall is located on the chamber bottom plate, the chamber top cover covers the chamber side wall, the carrying mechanism is located on the chamber bottom plate and between the chamber bottom plate and the chamber top cover, the carrying mechanism is used for placing the semiconductor element to be processed, and the electrostatic chuck is located on the side of the carrying mechanism facing the chamber top cover; The distribution density of the magnetic traction part gradually increases in the first direction from the chamber top cover to the electrostatic chuck.

[0017] Optionally, the magnetic protection layer includes a first region, a second region, and a third region arranged in sequence in the first direction, and the second region corresponds to the position of the gas distribution layer in the semiconductor processing reaction chamber; The ratio of the distribution density of the magnetic traction part in the first region, the second region, and the third region is 1:3:7.

[0018] Optionally, the distribution density of the magnetic traction part is related to the etching rate, and the etching rate is associated with the density and temperature of the plasma group in the semiconductor processing reaction chamber.

[0019] According to the second aspect of the embodiments of the present application, a method for preparing a semiconductor processing reaction chamber is further provided, and the method includes: Forming a magnetic protection layer on the inner surface of the chamber side wall of the semiconductor processing reaction chamber; wherein, the magnetic protection layer includes a magnetic traction part and a protection part, the magnetic traction part is located in the protection part, the protection part is used to protect the chamber side wall, and the magnetic traction part is used to attract at least one kind of free radical overflowing in the plasma group to move towards the chamber side wall, and at least two kinds of the free radicals react to generate gas and form an air flow, and the air flow can drive the polymer particles to move.

[0020] By adopting the above technical solution, since the magnetic traction part in the magnetic protection layer has ferromagnetism and ferromagnetic resonance effect, it can attract free radicals in the electric field, making the free radicals overflowing after leaving the plasma group approach the side wall of the cavity and move towards the magnetic traction part. As the overflowing free radicals react with each other, an air flow is formed along the side wall of the cavity, and these gases will entrain the polymer particles located near the side wall of the cavity and then be sucked away by the air pump. Therefore, by setting the magnetic traction part, it is possible to clean the side wall of the cavity while etching, thereby avoiding the deposition of polymer particles brought during the etching process on the side wall of the cavity, ensuring that the cavity environment of the side wall of the cavity does not change significantly before and after etching, reducing the impact of wafer etching on the semiconductor processing reaction chamber, and improving the accuracy when etching the subsequent wafer. In summary, the technical solution provided by this application can reduce the deposition of polymer particles generated during the semiconductor processing on the side wall of the chamber, and further, it can reduce costs and increase production capacity.

[0021] Optionally, the magnetic traction part is embedded in the protection part, and the surface of the magnetic traction part on the side away from the side wall of the cavity is exposed from the protection part; the magnetic traction part includes at least one magnetic traction element, and the cross section of the magnetic traction element has a preset pattern, and each preset pattern is used to guide the movement direction of the air flow after reaching the side wall of the cavity; Forming a magnetic protection layer on the inner surface of the side wall of the cavity of the semiconductor processing reaction chamber includes: Preparing a magnetic film layer with a preset pattern on the inner surface of the side wall of the cavity; Preparing a protective material film layer, and the protective material film layer covers the inner surface of the side wall of the cavity and the first magnetic film layer; Grinding the magnetic film layer and the protective material film layer to obtain the magnetic protection layer; the surface of the magnetic protection layer on the side away from the side wall of the cavity is flat.

[0022] Optionally, the protection part includes a first protection layer and a second protection layer, the first protection layer is located on the inner surface of the side wall of the cavity, the second protection layer is located on the side of the first protection layer away from the side wall of the cavity, the magnetic traction part is embedded in the second protection layer, and the surface of the magnetic traction part on the side away from the side wall of the cavity is exposed from the second protection layer; the magnetic traction part includes at least one magnetic traction element, and the cross section of the magnetic traction element has a preset pattern, and each preset pattern is used to guide the movement direction of the air flow after reaching the side wall of the cavity; Forming a magnetic protection layer on the inner surface of the side wall of the cavity of the semiconductor processing reaction chamber includes: Preparing a first protective material film layer on the inner surface of the side wall of the cavity; A magnetic film layer with a preset pattern is prepared on the surface of the first protective material film layer away from the side wall of the cavity; A second protective material film layer is prepared, and the second protective material film layer covers the first protective material film layer and the magnetic film layer; The magnetic film layer and the second protective material film layer are polished to obtain the magnetic protective layer; the surface of the side of the magnetic protective layer away from the side wall of the cavity is flat.

[0023] Optionally, the material of the magnetic traction part includes nickel; Preparing the magnetic film layer with a preset pattern on the inner surface of the side wall of the cavity includes: Applying a sputtering magnetic field to a nickel target to make nickel atoms fly towards the side wall of the cavity to generate a first initial layer; Applying electricity to the side of the first initial layer facing the side wall of the cavity to passivate the nickel in the first initial layer to form the magnetic film layer.

[0024] Optionally, the material of the magnetic traction part includes nickel; Preparing the magnetic film layer with a preset pattern on the surface of the first protective material film layer away from the side wall of the cavity includes: Applying a sputtering magnetic field to a nickel target to make nickel atoms fly towards the first protective material film layer to generate a second initial layer; Applying electricity to the side of the second initial layer facing the side wall of the cavity to passivate the nickel in the second initial layer to form the magnetic film layer.

[0025] According to the third aspect of the embodiments of the present application, a semiconductor processing device is further provided, including the semiconductor processing reaction chamber described above.

[0026] In summary, the present application includes at least one of the following beneficial technical effects: 1. In the present application, a magnetic protective layer is provided on the side wall of the cavity of the semiconductor processing reaction chamber. The magnetic traction part composed of nickel atoms in the magnetic protective layer attracts free radicals in the electric field, so that the free radicals overflowing after detaching from the plasma group approach the side wall of the cavity. After the free radicals come into contact with the nickel atoms, they annihilate and generate gas. This gas forms an air flow, which will entrain polymer particles near the side wall of the cavity and then be sucked away by the air pump. Through the reasonable layout of the magnetic traction part, it is realized that the semiconductor processing cavity can be etched and the side wall can be cleaned at the same time during use, ensuring that the cavity environment does not change significantly before and after etching.

[0027] 2. In the present application, through the catalytic effect of nickel on the etching radicals, the radicals that escape and approach the sidewall of the cavity generate gas to form an air current after contacting nickel, and the movement direction of the air current after reaching the sidewall of the cavity is guided by the trend of nickel (i.e., the distribution lines of nickel) in the magnetic protection layer. The density of the magnetic traction parts at different reaction positions in the cavity optimizes the removal efficiency of polymer particles.

[0028] 3. In the present application, the magnetic protection layer can be formed by spraying a blended material composed of configured nickel and Y 2 O 3 on the sidewall of the cavity. The magnetic protection layer can also be prepared by first preparing a magnetic film layer with a preset pattern on the inner surface of the sidewall of the cavity, then preparing a protective material film layer covering the inner surface of the sidewall of the cavity and the magnetic film layer, and then grinding the magnetic film layer and the protective material film layer to obtain the magnetic protection layer. The magnetic protection layer can also be prepared by first preparing a first protective material film layer on the inner surface of the sidewall of the cavity, then preparing a second protective material film layer covering the first protective material film layer and the magnetic film layer, and then grinding the magnetic film layer and the second protective material film layer to obtain the magnetic protection layer. The magnetic protection layer in the present application has multiple preparation methods, and multiple preparation methods are allowed to be mixed when manufacturing the same semiconductor processing reaction chamber.

[0029] 4. In the present application, in the preset pattern of the magnetic traction parts composed of nickel atoms, the distribution of nickel can be in a ring shape. The overflowing radicals are attracted and move towards the direction of the magnetic traction parts, and after recombination, a ring-shaped air current is generated. These ring-shaped air currents can reduce the deposition of polymer particles during the wafer etching process.

[0030] 5. In the present application, nickel is sprayed by sputtering. In this method, the magnetic field can not only improve the sputtering rate but also improve the quality and uniformity of the thin film. Since the movement of electrons is restricted near the nickel target, this helps to achieve more uniform thin film deposition and can reduce the temperature rise of the sidewall of the cavity, thereby avoiding thermal damage. Moreover, nickel is more likely to be passivated when electrified, and the passivation layer can better resist the plasma without affecting its catalytic function.

[0031] 6. In the present application, during the preparation of the magnetic protection layer, the structure of "Y 2 O 3 layer - nickel layer - Y 2 O 3 layer" can be prepared first, and then the magnetic protection layer is obtained through grinding. In this way, it is possible to avoid the defect problems caused by the premature consumption of nickel, and it is also possible to incorporate nickel nanoparticles on the surface of the underlying Y 2 O 3 (i.e., the first protective layer) by means of ion bombardment in the plasma. In this way, the exposed doped Y 2 O 3It not only has more excellent plasma resistance but also has a free radical catalysis comparable to that of nickel plating. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 FIG. is a schematic structural diagram of a semiconductor processing reaction chamber provided by the present application; Figure 2 is Figure 1 a schematic structural diagram of a side wall of the cavity in Figure 3 is Figure 1 a schematic diagram of a side wall of the cavity in which the preset pattern of the magnetic traction part is a ring; Figure 4 is Figure 1 a schematic diagram of a side wall of the cavity in which the preset pattern of the magnetic traction part is a solid circle; Figure 5 is Figure 1 a schematic diagram of a side wall of the cavity in which the preset pattern of the magnetic traction part is outwardly divergent; Figure 6 is Figure 1 a schematic diagram of a side wall of the cavity in which the preset pattern of the magnetic traction part is inwardly convergent; Figure 7 is Figure 1 another schematic structural diagram of a side wall of the cavity in Figure 8 FIG. is a flowchart of a method for manufacturing a semiconductor processing reaction chamber provided by the present application; Figure 9 FIG. is a flowchart of another method for manufacturing a semiconductor processing reaction chamber provided by the present application; Figure 10 is Figure 9 a schematic diagram of the application of the maintenance period in Figure 11 FIG. is a flowchart of another method for manufacturing a semiconductor processing reaction chamber provided by the present application.

[0033] BRIEF DESCRIPTION OF THE DRAWINGS: 101, upper electrode; 102, side wall of the cavity; 103, magnetic protection layer; 104, carrier mechanism; 105, cavity top cover; ESC, electrostatic chuck; wafer, silicon wafer; focus ring, silicon ring; 1031, protection part; 1032, magnetic traction part; 1033, first protection layer; 1034, second protection layer; season1, warm-up time period; wac, maintenance period; main process, main working time period; A, side of the cavity top cover; B, gas distribution layer; C, side of the electrostatic chuck; Plasma, plasma group; Q1, first area; Q2, second area; Q3, third area. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0034] Unless otherwise defined, the technical terms or scientific terms used in this specification and claims shall have the ordinary meanings as understood by those of ordinary skill in the technical field to which the present invention pertains. The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be noted that during the specific description of these embodiments, for the sake of concise description, this specification cannot describe all features of the actual embodiments in detail. Without departing from the spirit and scope of the present invention, those skilled in the art can modify and replace the embodiments of the present invention, and the resulting embodiments are also within the protection scope of the present invention.

[0035] In view of the technical problems existing in the related art, the embodiments of the present application provide a semiconductor processing reaction chamber, as Figure 1 shown, the semiconductor processing reaction chamber may include an upper electrode 101, a chamber bottom plate (not shown), a chamber side wall 102, a magnetic protection layer 103, a carrying mechanism 104, an electrostatic chuck ESC, and a chamber top cover 105.

[0036] As Figure 1 shown, the chamber side wall 102 is located on the chamber bottom plate, the chamber top cover 105 covers the chamber side wall 102, the carrying mechanism 104 is located on the chamber bottom plate and between the chamber bottom plate and the chamber top cover 105. The carrying mechanism 104 is used to place the semiconductor element to be processed. For example, the wafer to be etched, the electrostatic chuck ESC is located on one side of the carrying mechanism 104 facing the chamber top cover 105 and can be used to fix the semiconductor element to be processed, and the upper electrode 101 is located on the inner wall of the chamber top cover 105.

[0037] In one embodiment, the electrostatic chuck ESC is usually set as the negative electrode opposite to the upper electrode 101. A silicon ring focus ring is clamped at the edge of the upper surface of the electrostatic chuck ESC. The wafer is placed in the silicon ring focus ring. When the semiconductor processing reaction chamber is in use, the wafer is placed on the electrostatic chuck ESC and clamped by the silicon ring focus ring. Subsequently, process gas is injected into the semiconductor processing reaction chamber which is usually in a vacuum state. Then, a radio frequency field is applied through the upper electrode 101 and the electrostatic chuck ESC (as the grounding electrode), so that the process gas is plasmaized to form a plasma cluster Plasma. As coordinates, Figure 1 the side of the chamber top cover is represented as A, the gas distribution layer is represented as B, and the side of the electrostatic chuck is represented as C.

[0038] As Figure 2 shown, a magnetic protection layer 103 is provided on the chamber side wall 102. The surface of the magnetic protection layer 103 away from the chamber side wall 102 is flat. In this way, it is not conducive to particle deposition and can reduce particle deposition.

[0039] In one embodiment, Figure 2 As shown, the magnetic protection layer 103 may include a magnetic traction portion 1032 and a protection portion 1031. The magnetic traction portion 1032 is located in the protection portion 1031. The protection portion 1031 is used to protect the cavity side wall 102. The magnetic traction portion 1032 is used to attract the overflowing F*, H*, CH 2 *, Cl* and other free radicals move toward the cavity sidewall 102, and at least two of the free radicals react to generate gas and form a gas flow, which can drive a small amount of polymer particles to move. For example, F* and H* can generate HF, H* and CH 2 *Can generate CH 4 .

[0040] In one embodiment, the magnetic protection layer 103 includes nickel and Y 2 O 3 The magnetic traction part 1032 composed of nickel atoms in the magnetic protection layer 103 has ferromagnetism, and the magnetic traction part 1032 attracts free radicals in the overflow plasma that has separated from the plasma group Plasma in the electromagnetic field. After the free radicals come into contact with the nickel atoms in the magnetic protection layer 103, they annihilate to generate gas, and the gas forms an airflow, which moves toward the cavity side wall 102 and entrains the polymer particles located near the cavity side wall 102. Through the reasonable layout of the magnetic traction part 1032, it can be achieved that the semiconductor processing chamber can be etched and cleaned at the same time when in use, ensuring that the cavity environment of the cavity side wall 102 does not change significantly before and after etching, that is, the cavity environment can be kept stable.

[0041] In one embodiment, there may be only one magnetic protective layer 103 on the cavity sidewall 102, and the magnetic traction portion 1032 includes nano-scale magnetic traction particles, which may be mixed in the protective portion 1031. The magnetic protective layer 103 is made of nickel and Y 2 O 3 After being mixed in a certain ratio, the mixture is directly sprayed onto the side wall 102 of the cavity.

[0042] In another embodiment, Figure 2 As shown, the magnetic protective layer 103 includes a magnetic traction portion 1032 and a protective portion 1031, which are arranged on the inner surface of the cavity side wall 102, the magnetic traction portion 1032 is embedded in the protective portion 1031, and the surface of the magnetic traction portion 1032 away from the cavity side wall 102 is exposed from the protective portion 1031.

[0043] In one embodiment, the material of the magnetic traction part 1032 includes nickel. Ni is highly polishable and corrosion-resistant, so it is feasible. Ni has ferromagnetism and can catalyze the recombination of free radicals such as H and F through ferromagnetic resonance.

[0044] In one embodiment, the material of the first protective layer 1033 includes Y 2 O 3 .

[0045] As Figure 3 shown, the magnetic traction part 1032 includes a plurality of magnetic traction elements 31. The cross-section of the magnetic traction element 31 has a preset pattern, and the preset pattern is used to guide the movement direction of the air flow after reaching the cavity side wall 102. The movement direction of the air flow (the air flow corresponding to the catalytic generation of gas from the overflowing free radicals escaping from the plasma group) is guided by the nickel atom distribution lines indicated by the preset pattern, and the movement intensity of the air flow is guided by the thickness change of the preset pattern.

[0046] The magnetic traction part 1032 is embedded in the protective layer 1031, and the magnetic traction part 1032 can contact the plasma group Plasma, so as to catalyze the generation of gas from the overflowing free radicals escaping from the plasma group, and then drive the air flow formed by the gas to move towards the cavity side wall 102 and entrain the polymer particles near the cavity side wall 102, achieving the effect of cleaning the cavity side wall 102. Usually, these gases are then discharged through an air pump (not shown in the figure). In this example, the nickel atoms in the magnetic protective layer 103 constitute the magnetic traction part.

[0047] In one embodiment, the thickness of the magnetic traction part 1032 is 1-4 mm. For example, the thickness of the magnetic traction part 1032 can be 1 mm, 2 mm, 3 mm or 4 mm.

[0048] Among them, the above preset pattern can be set in the following several styles: (1) The preset pattern is set as a ring, as Figure 3 shown. The air flow attracted by all the nickel atoms in the ring is an annular air flow, and more and more annular air flows take away the polymer particles in the cavity side wall 102 respectively. The circular design can not only achieve the effect, but also greatly reduce the influence on the cavity.

[0049] (2) The preset pattern is a solid circle, as Figure 4 shown. The air flow attracted by all the nickel atoms in the solid circle impacts its own position and spreads around the edge of the solid circle; (3) The preset pattern is a pattern that diverges outward, as Figure 5 shown. All the nickel atoms in the pattern that diverges outward cause the attracted air flow to impact the middle, and then the edge guides the air flow to spread out radially outward.

[0050] (4) The preset pattern is a pattern that converges inward, as Figure 6 shown. The air flow attracted by all the nickel atoms in the pattern that converges inward impacts the middle point from the outside to the inside, and the air flow in the middle is ejected away.

[0051] In some examples, such as Figure 3 - 6 shown, the distribution density of the magnetic traction part 1032 is related to the etching rate of the etched wafer, and the etching rate of the etched wafer is associated with the plasma density and temperature in the reaction chamber.

[0052] Specifically, for the same reaction chamber, the density of the plasma gradually decreases from top to bottom, the etching rate of the plasma on the wafer gradually decreases from top to bottom, the density of the magnetic traction part 1032 gradually increases from top to bottom, and the distribution density of the magnetic traction part 1032 in the reaction chamber is negatively correlated with the etching rate of the etched wafer. For different reaction chambers, the greater the intensity of plasma injection, the faster the etching rate of the wafer, and a higher density of the magnetic traction part 1032 is required to clean the polymer particles splashed on the side wall 102 of the cavity.

[0053] In some examples, such as Figure 3 - 6 shown, the distribution density of the magnetic traction part 1032 gradually increases in the first direction F from the cavity top cover 105 to the electrostatic chuck ESC, that is, the distribution density of the magnetic traction part 1032 gradually increases in the first direction F from the cavity top cover side A to the electrostatic chuck side C. In this way, the removal efficiency of particles such as polymers can be optimized.

[0054] When the cross-section of the magnetic traction part 1032 is an annular shape, circular-ring-shaped magnetic traction parts 1032 with different densities are made on the side wall 102 of the cavity, which can not only optimize the removal efficiency of particles such as polymers, but also reduce the cost increase caused by sputtering coatings.

[0055] In some examples, such as Figure 3 - 6 shown, the magnetic protection layer 103 includes a first region Q1, a second region Q2, and a third region Q3 arranged in sequence in the first direction F. The first region Q1 is located on the side of the second region Q2 close to the cavity top cover, the second region Q2 corresponds to the position of the gas distribution layer B in the semiconductor processing reaction chamber, and the third region Q3 is located on the side of the second region Q2 close to the electrostatic chuck. The proportion of the distribution density of the magnetic traction part 1032 in the first region Q1, the second region Q2, and the third region Q3 can be 1:3:7.

[0056] In some examples, the laying thickness of nickel in the magnetic traction part 1032 is based on the plasma cluster Plasma generated by the process gas with a preset concentration passing through the radio frequency field, the consumption rate V of nickel by the density of the plasma cluster Plasma 镍 , and the consumption rate V of Y 2 O 3 in the first protection layer 1033 by the plasma cluster Plasma 保护, the thickness range of the magnetic traction part 1032 and the thickness range of the first protective layer 1033 in the semiconductor processing reaction chamber of the plan are calculated. Subsequently, according to the planned orientation, etc., the thickness of each planned magnetic traction part 1032 is further adjusted within the thickness range.

[0057] In another embodiment, as Figure 7 shown, the magnetic protective layer 103 includes a first protective layer 1033, a magnetic traction part 1032 and a second protective layer 1034. The first protective layer 1033 is located on the inner surface of the cavity side wall 102, the second protective layer 1034 is located on the side of the first protective layer 1033 away from the cavity side wall 102, and the magnetic traction part 1032 is embedded in the second protective layer 1034. The surface of the magnetic traction part 1032 on the side away from the cavity side wall 102 is exposed from the second protective layer 1034.

[0058] Among them, the material of the magnetic traction part 1032 includes nickel. The first protective layer 1033 and the second protective layer 1034 are used as protective layers, and their materials include Y 2 O 3 .

[0059] Figure 7 For the magnetic protective layer shown, during manufacturing, first prepare a first protective material film layer on the inner surface of the cavity side wall, then prepare a second protective material film layer covering the first protective material film layer and the magnetic film layer, and then grind the magnetic film layer and the second protective material film layer to obtain the magnetic protective layer. In this way, the defect problem caused by the premature consumption of nickel can be avoided, and with the help of ion bombardment in the plasma, nickel nanoparticles can be doped on the surface of the underlying Y 2 O 3 (i.e., the first protective layer 1033), so that the exposed doped Y 2 O 3 (the first protective layer 1033) not only has more excellent plasma resistance but also has a free radical catalytic effect comparable to that of nickel. In this embodiment, the magnetic traction part 1032 is composed of nickel atoms in the magnetic protective layer 103.

[0060] Preferably, the thickness of the magnetic traction part 1032 accounts for 20 - 30% of the thickness of the magnetic protective layer 103. For example, the thickness of the magnetic traction part 1032 can account for 20%, 25% or 30% of the thickness of the magnetic protective layer.

[0061] The semiconductor processing reaction chamber provided by the embodiments of the present application is introduced above. Next, the preparation method of the semiconductor processing reaction chamber is introduced.

[0062] The embodiments of the present application provide a preparation method of a semiconductor processing reaction chamber, as Figure 8 shown, including the following steps: S8. A magnetic protection layer is formed on the inner surface of the sidewall of the cavity of the semiconductor processing reaction chamber.

[0063] Among them, the magnetic protection layer 103 includes a magnetic traction part 1032 and a protection part 1031. The magnetic traction part 1032 is located in the protection part 1031. The protection part 1031 is used to protect the sidewall of the cavity. The magnetic traction part 1032 located in the protection part 1031 is used to attract various free radicals such as F*, H*, CH 2 *, Cl*, etc. in the plasma cluster to move towards the sidewall of the cavity. At least two of these free radicals react to produce gas and form an air flow, and the air flow can drive the movement of polymer particles.

[0064] In one embodiment, the magnetic traction part 1032 includes nanoscale magnetic traction particles, and the magnetic traction particles are mixed in the protection part 1031. In Y 2 O 3 nickel particles are mixed into the coating according to a preset ratio to form a mixed coating. In this embodiment, the mixed coating can be sprayed on the sidewall 102 of the semiconductor processing reaction chamber to form the magnetic protection layer 103.

[0065] The embodiment of the present application also provides a preparation method for a semiconductor processing reaction chamber. In this embodiment, the magnetic traction part 1032 is embedded in the protection layer 1031, and the surface of the side of the magnetic traction part 1032 away from the sidewall 102 of the cavity is exposed from the protection layer 1031; the magnetic traction part 1032 includes at least one magnetic traction element, and the cross-section of the magnetic traction element has a preset pattern, and each preset pattern is used to guide the movement direction of the air flow after reaching the sidewall of the cavity. That is, in this embodiment, the preparation method of the semiconductor processing reaction chamber is used to prepare Figure 2 the semiconductor processing reaction chamber shown.

[0066] In this embodiment, the material of the magnetic traction part includes nickel Ni, and the material of the protection layer includes Y 2 O 3 .

[0067] As shown in Figure 9 the following steps S9-1 to S9-3 may be included in the preparation method of the semiconductor processing reaction chamber: S9-1. Prepare a magnetic film layer with a preset pattern on the inner surface of the sidewall of the cavity.

[0068] S9-2. Prepare a protective material film layer, and the protective material film layer covers the inner surface of the sidewall of the cavity and the magnetic film layer.

[0069] S9-3. Grind the magnetic film layer and the protective material film layer to obtain a magnetic protection layer; the surface of the side of the magnetic protection layer away from the sidewall of the cavity is flat.

[0070] In step S9-3, the magnetic film layer and the protective material film layer are ground so that the surface of the side of the magnetic traction portion away from the cavity sidewall is exposed from the protective portion, obtaining a magnetic protective layer. Wherein, the ground magnetic film layer forms the magnetic traction portion 1032, and the ground protective material film layer forms the protective layer 1031.

[0071] In an embodiment, Ni can be plated on the cavity sidewall 102 in a preset pattern by sputtering to obtain a magnetic film layer. Then, a layer of Y 2 O 3 coating is sprayed on the magnetic film layer to obtain a protective material film layer. Then, the surface of the side away from the cavity sidewall is flattened by grinding to obtain the magnetic protective layer 103, that is, Ni is embedded in the Y 2 O 3 coating in a preset pattern.

[0072] In one embodiment, the method for realizing the preparation of the first magnetic film layer with a preset pattern on the inner surface of the cavity sidewall is: A sputtering magnetic field is applied to the nickel target so that nickel atoms fly towards the cavity sidewall to generate a first initial layer. Then, the side of the first initial layer facing the cavity sidewall is electrified to passivate the nickel in the first initial layer, forming a first magnetic film layer. The passivation layer can better resist plasma without affecting its catalytic function.

[0073] In one embodiment, the density distribution of the magnetic traction portion 1032 can be calculated first according to the expected ambient temperature distribution during the operation of the semiconductor processing reaction chamber and the expected plasma density distribution of the plasma group. Then, according to the first consumption rate of nickel by the plasma group Plasma in the reaction chamber and the second consumption rate of Y 2 O 3 , the expected thickness and maintenance period of nickel are calculated. Then, according to the density distribution of nickel and the expected thickness of nickel, combined with the preset pattern, a nickel spraying scheme is obtained. Then, according to the nickel spraying scheme, nickel is sprayed on the cavity sidewall 102 of the semiconductor processing reaction chamber in a preset pattern to prepare the magnetic traction portion 1032.

[0074] In one embodiment, before formal manufacturing, the ambient temperatures corresponding to different positions of the semiconductor processing reaction chamber in the working state are estimated first, and then the ambient temperatures corresponding to these different positions are sorted out as the predicted ambient temperature distribution. The plasma densities at different positions of the semiconductor processing reaction chamber in the working state are estimated, and the plasma densities corresponding to these different positions are used as the predicted plasma density distribution. The predicted ambient temperature distribution and the predicted plasma density distribution can be obtained by designers through simulation tests, or can be obtained by designers during sample trial production before mass-producing this semiconductor processing reaction chamber, or can also be manually input by designers according to the estimation, etc. Subsequently, according to the predicted plasma density distribution and the predicted ambient temperature distribution, the etching rates of the wafers at different positions in the reaction chamber are obtained, and then the density of the nickel distribution is obtained. Generally, the higher the plasma density and the lower the ambient temperature at a certain position, the faster the etching rate of the wafer, the more polymer particles are generated per unit time, and the thicker the nickel is required. The density requirements for nickel at different reaction positions refer to Figure 3 - 6 .

[0075] In one embodiment, the first consumption rate of nickel by the plasma group Plasma in the reaction chamber, and the second consumption rate of Y 2 O 3 by the plasma group Plasma in the reaction chamber. Here, both the first consumption rate and the second consumption rate are calculated by the staff according to the plasma density of the plasma group Plasma planned during the application of this reaction chamber.

[0076] Alternatively, in the spraying system for spraying nickel and Y 2 O 3 in this case, an operation software is implanted. The operation software contains the calculation formulas for the consumption rates of nickel at different plasma densities, and the calculation formulas for the consumption rates of Y 2 O 3 at different plasma densities. The staff only needs to input the plasma densities at different positions into the operation software in this spraying system to obtain the consumption rates of nickel and Y 2 O 3 at each position, and calculate the thickness range of nickel required to ensure the continuous function of nickel throughout the etching process, and the maintenance cycle required when the nickel is insufficient to support the etching process of the next wafer.

[0077] The application of the maintenance cycle can refer to Figure 10 , that is, after etching the previous wafer, it is necessary to wait for a maintenance cycle before etching the next wafer. Usually, during the maintenance cycle, the side wall 102 of the reaction chamber needs to be cleaned between wafers, and it can also be used to repair the side wall 102 of the chamber, such as replenishing nickel and Y 2O 3 (Re-spraying) to ensure that the side wall 102 of the reaction chamber can be restored to the standard state before etching the next wafer. Figure 10 In [the figure], the upper half is one working timing sequence, and the lower half is another working timing sequence. Each working timing sequence includes a warm-up period season1, a maintenance cycle wac, and a main working period main process. The maintenance cycle wac and the main working period main process are executed intermittently. Among them, during the warm-up period season1, a warm-up wafer is usually used as the first wafer (which can be real or virtual) for the etching process after the start of each working process; the time period of the maintenance cycle wac is usually used for inter-wafer cleaning or patching the side wall 102 of the chamber; the main working period mainprocess is usually used to execute the process of etching the wafer, including introducing process gas, applying a radio frequency field to ionize the process gas, etching the wafer while cleaning the polymer particles on the side wall 102 of the chamber.

[0078] In one embodiment, according to the density distribution of nickel at different positions and each nickel thickness range, combined with a preset pattern, a nickel spraying scheme is obtained. This nickel spraying scheme fully reflects the density of nickel at different positions and sprays nickel within the corresponding preset pattern and thickness range.

[0079] It is worth mentioning that there can be one or more preset patterns. For example, the preset pattern can be a ring, a solid circle, a pattern radiating outward, or a pattern radiating inward; the preset patterns of different nickels can be the same or different. For example, one preset pattern is a ring, and the preset pattern of another nickel is a solid circle, and both nickels are arranged on the side wall 102 of the same reaction chamber; the nickels with the same preset pattern can be the same size or different sizes. For example, the nickel in the area with low plasma density uses a ring with a very large radius, and the nickel in the area with high plasma density uses small and densely arranged small rings with a very small radius.

[0080] In one embodiment, according to the nickel spraying scheme, the position distribution, preset pattern, and thickness distribution of each nickel are interpreted and sprayed onto the side wall 102 to obtain the magnetic traction part 1032.

[0081] In this embodiment, the nickel is sprayed by sputtering. The magnetic field can not only increase the sputtering rate but also improve the quality and uniformity of the thin film. Since the movement of electrons is restricted near the nickel target, this helps to achieve more uniform thin film deposition and can reduce the temperature rise of the side wall 102 of the chamber, thus avoiding thermal damage. Moreover, nickel is more likely to be passivated when electrified, and the passivation layer can better resist the plasma without affecting its catalytic function. In addition, the method of spraying nickel in this application can also be thermal spraying.

[0082] The embodiment of the present application also provides a method for manufacturing a semiconductor processing reaction chamber. In this embodiment, the magnetic traction part includes the magnetic traction part 1032, and the protection part includes the first protection layer 1033 and the second protection layer 1034. The first protection layer 1033 is located between the cavity side wall 102 and the second protection layer 1034. The magnetic traction part 1032 is embedded in the second protection layer 1034, and the surface of the magnetic traction part 1032 on the side away from the cavity side wall is exposed from the second protection layer 1034. The magnetic traction part 1032 includes at least one magnetic traction element, and the cross-section of the magnetic traction element has a preset pattern. Each preset pattern is used to guide the movement direction of the gas flow after reaching the cavity side wall. That is, in this embodiment, the method for manufacturing the semiconductor processing reaction chamber is used to manufacture Figure 7 the semiconductor processing reaction chamber as shown

[0083] In this embodiment, the material of the magnetic traction part 1032 may include nickel (Ni), and the material of the first protection layer may include Y 2 O 3 .

[0084] As shown Figure 11 , the method for manufacturing the semiconductor processing reaction chamber may include the following steps S11-1 to S11-4: S11-1, preparing a first protective material film layer on the inner surface of the cavity side wall. The first protective material film layer is the above-mentioned first protection layer 1033.

[0085] S11-2, preparing a magnetic film layer with a preset pattern on the surface of the first protective material film layer away from the cavity side wall.

[0086] S11-3, preparing a second protective material film layer, and the second protective material film layer covers the first protective material film layer and the magnetic film layer.

[0087] S11-4, grinding the magnetic film layer and the second protective material film layer to obtain a magnetic protective layer; the surface of the magnetic protective layer on the side away from the cavity side wall is flat.

[0088] In step S11-4, the magnetic film layer and the second protective material film layer are ground so that the surface of the magnetic traction part on the side away from the cavity side wall is exposed from the second protection layer 1034 to obtain a magnetic protective layer. Among them, the ground magnetic film layer forms the magnetic traction part 1032, and the ground second protective material film layer forms the second protection layer 1034.

[0089] In the embodiment, a layer of Y 2 O 3, a first protective material film layer is obtained. Then, Ni can be deposited on the first protective material film layer in a preset pattern by sputtering to obtain a magnetic film layer. Then, a layer of Y is sprayed on the magnetic film layer. 2 O 3 , a second protective material film layer is obtained. Then, the surface on the side away from the cavity sidewall is flattened by grinding to obtain the magnetic protective layer 103, that is, Ni is embedded in the Y 2 O 3 coating in a preset pattern.

[0090] In one embodiment, the method of preparing a magnetic film layer with a preset pattern on the surface of the first protective material film layer away from the cavity sidewall is: applying a sputtering magnetic field to a nickel target to make nickel atoms fly towards the first protective material film layer to generate a second initial layer. Then, the side of the second initial layer facing the cavity sidewall is electrified to passivate the nickel in the second initial layer, forming a magnetic film layer. The passivated nickel can better resist plasma without affecting its catalytic function.

[0091] In one embodiment, nickel with a preset pattern can be sputtered on the first protective layer 1033 as a magnetic film layer according to a preset distribution density.

[0092] In this embodiment, both the first protective layer 1033 and the second protective layer 1034 serve as the protective part 1031 of the magnetic protective layer 103; the magnetic traction part 1032 is a part of the magnetic protective layer 103.

[0093] During the manufacturing process, the structure of "Y 2 O 3 layer - nickel layer - Y 2 O 3 layer" can be prepared first, and then the magnetic protective layer is obtained by grinding. In this way, the defect problem caused by the premature consumption of nickel can be avoided, and nickel nanoparticles can be doped into the surface of the underlying Y 2 O 3 by means of ion bombardment in the plasma. In this way, the exposed doped Y 2 O 3 not only has more excellent plasma resistance but also has a free radical catalytic effect comparable to that of the nickel coating. Other implementation details and working modes of the preparation method of the semiconductor processing reaction chamber disclosed in this application are the same as or similar to those of the semiconductor processing reaction chamber described above, and will not be elaborated here.

[0094] The step division of the above various methods is only for clear description. During implementation, they can be combined into one step or some steps can be split into multiple steps. As long as the same logical relationship is included, it is within the protection scope of this patent. Adding insignificant modifications to the process or introducing insignificant designs, but without changing the core design of the process, are all within the protection scope of this patent.

[0095] The present invention also provides a semiconductor processing device, including a dry etching machine, an ion implantation machine, a chemical vapor deposition device, and the above-mentioned semiconductor processing reaction chamber.

[0096] Other implementation details of the semiconductor processing device disclosed in this application are the same as or similar to those of the semiconductor processing reaction chamber described above, and will not be elaborated here.

[0097] In the present invention, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. The term "plurality" means two or more, unless otherwise clearly defined.

[0098] The above description of the embodiments is for the convenience of those of ordinary skill in the art to understand and apply this application. Those skilled in the art can obviously make various modifications to these embodiments easily and apply the general principles described herein to other embodiments without creative efforts. Therefore, this application is not limited to the embodiments here. Improvements and modifications made by those skilled in the art based on the content disclosed in this application without departing from the scope and spirit of this application are all within the scope of this application.

Claims

1. A semiconductor processing reaction chamber, characterized in that: It includes a cavity side wall and a magnetic protective layer, wherein the magnetic protective layer is located on the inner surface of the cavity side wall; The magnetic protective layer includes a magnetic traction portion and a protective portion, wherein the magnetic traction portion is located in the protective portion, and the protective portion is used to protect the side wall of the cavity. The magnetic traction portion is used to attract at least one overflowing free radical in the plasma group to move toward the side wall of the cavity, wherein at least two of the free radicals react to generate gas and form an airflow, and the airflow can drive the polymer particles to move.

2. The semiconductor processing reaction chamber according to claim 1, characterized in that: The surface of the magnetic protection layer at a side away from the cavity side wall is flat.

3. The semiconductor processing reaction chamber according to claim 1, characterized in that: The magnetic traction portion is embedded in the protection portion, and a surface of the magnetic traction portion at a side away from the cavity side wall is exposed from the protection portion.

4. The semiconductor processing reaction chamber according to claim 3, characterized in that: The magnetic traction portion includes at least one magnetic traction element, the cross section of the magnetic traction element is a preset pattern, and the preset pattern is used to guide the movement direction of the airflow after it reaches the side wall of the cavity.

5. The semiconductor processing reaction chamber according to claim 4, characterized in that: The preset pattern is a ring or a solid circle.

6. The semiconductor processing reaction chamber according to claim 1, characterized in that: The protection part includes a first protection layer and a second protection layer, the first protection layer is located on the inner surface of the cavity side wall, the second protection layer is located on the side of the first protection layer away from the cavity side wall, the magnetic traction part is embedded in the second protection layer, and the surface of the magnetic traction part away from the cavity side wall is exposed from the second protective layer.

7. The semiconductor processing reaction chamber according to claim 1, characterized in that: The magnetic traction portion includes magnetic traction particles, and the magnetic traction particles are mixed in the protection portion.

8. The semiconductor processing reaction chamber according to any one of claims 1 to 7, characterized in that: The material of the magnetic traction part includes nickel, and the material of the protection part includes Y2O3.

9. The semiconductor processing reaction chamber according to claim 1, characterized in that: The thickness of the magnetic traction portion is 1-4 mm.

10. The semiconductor processing reaction chamber according to claim 1, characterized in that: It also includes a cavity bottom plate, a cavity top cover, a carrying mechanism and an electrostatic chuck; The cavity sidewall is located on the cavity bottom plate, the cavity top cover is covered on the cavity sidewall, the carrying mechanism is located on the cavity bottom plate and between the cavity bottom plate and the cavity top cover, the carrying mechanism is used to place the semiconductor element to be processed, and the electrostatic chuck is located on the side of the carrying mechanism facing the cavity top cover; The distribution density of the magnetic traction portion gradually increases in a first direction from the cavity top cover to the electrostatic chuck.

11. The semiconductor processing reaction chamber according to claim 10, characterized in that: The magnetic protection layer includes a first region, a second region and a third region arranged in sequence in the first direction, and the second region corresponds to the position of the gas distribution layer in the semiconductor processing reaction chamber; The distribution density of the magnetic traction portion in the first region, the second region and the third region is in a ratio of 1:3:

7.

12. The semiconductor processing reaction chamber according to claim 1, characterized in that: The distribution density of the magnetic traction part is related to the etching rate, and the etching rate is associated with the plasma group density and temperature in the semiconductor processing reaction chamber.

13. A method for preparing a semiconductor processing reaction chamber, characterized in that: The method comprises: A magnetic protective layer is formed on the inner surface of the side wall of the semiconductor processing reaction chamber; wherein the magnetic protective layer includes a magnetic traction portion and a protection portion, the magnetic traction portion is located in the protection portion, the protection portion is used to protect the side wall of the chamber, and the magnetic traction portion is used to attract at least one overflowing free radical in the plasma group to move toward the side wall of the chamber, wherein at least two of the free radicals react to generate gas and form an airflow, and the airflow can drive the polymer particles to move.

14. The preparation method according to claim 13, characterized in that: The magnetic traction portion is embedded in the protection portion, and a surface of the magnetic traction portion on a side away from the cavity side wall is exposed from the protection portion; the magnetic traction portion includes at least one magnetic traction element, and a cross section of the magnetic traction element is a preset pattern, and each of the preset patterns is used to guide the movement direction of the airflow after it reaches the cavity side wall; The method of forming a magnetic protective layer on the inner surface of the side wall of the semiconductor processing reaction chamber comprises: Preparing a magnetic film layer with a preset pattern on the inner surface of the side wall of the cavity; preparing a protective material film layer, wherein the protective material film layer covers the inner surface of the cavity side wall and the magnetic film layer; The magnetic film layer and the protective material film layer are ground to obtain the magnetic protective layer; the surface of the magnetic protective layer on a side away from the side wall of the cavity is flat.

15. The preparation method according to claim 13, characterized in that: The protection part includes a first protection layer and a second protection layer, the first protection layer is located on the inner surface of the cavity side wall, the second protection layer is located on the side of the first protection layer away from the cavity side wall, the magnetic traction part is embedded in the second protection layer, and the surface of the magnetic traction part away from the cavity side wall is exposed from the second protection layer; the magnetic traction part includes at least one magnetic traction element, the cross section of the magnetic traction element is a preset pattern, and each of the preset patterns is used to guide the movement direction of the airflow after it reaches the cavity side wall; The method of forming a magnetic protective layer on the inner surface of the side wall of the semiconductor processing reaction chamber comprises: Preparing a first protective material film layer on the inner surface of the side wall of the cavity; Preparing a magnetic film layer with a preset pattern on a surface of the first protective material film layer away from the side wall of the cavity; preparing a second protective material film layer, wherein the second protective material film layer covers the first protective material film layer and the magnetic film layer; The magnetic film layer and the second protective material film layer are ground to obtain the magnetic protective layer; the surface of the magnetic protective layer on a side away from the side wall of the cavity is flat.

16. The preparation method according to claim 14, characterized in that: The material of the magnetic traction portion includes nickel; The method of preparing a magnetic film layer with a preset pattern on the inner surface of the side wall of the cavity comprises: Applying a sputtering magnetic field to the nickel target material so that nickel atoms fly toward the side wall of the cavity to generate a first initial layer; Power is applied to the side of the first initial layer facing the side wall of the cavity to passivate the nickel of the first initial layer to form the magnetic film layer.

17. The preparation method according to claim 15, characterized in that: The material of the magnetic traction portion includes nickel; The step of preparing a magnetic film layer having a preset pattern on a surface of the first protective material film layer away from the side wall of the cavity comprises: Applying a sputtering magnetic field to the nickel target material to make nickel atoms fly toward the first protective material film layer to generate a second initial layer; Power is applied to the side of the second initial layer facing the side wall of the cavity to passivate the nickel of the second initial layer to form the magnetic film layer.

18. A semiconductor processing equipment, characterized in that: It comprises a semiconductor processing reaction chamber as described in any one of claims 1-12.

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