Aluminum film etching method and device and etching machine
By detecting the concentration of AL corrosion liquid and calculating the etching time, the problem of consistency of aluminum graphic profile profile is solved, achieving higher consistency and lower cost.
Patent Information
- Application Number
- CN202510273162.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2025-05-30
AI Technical Summary
The prior art is difficult to meet the requirements of consistency in aluminum graphic profile, resulting in the impact of semiconductor chip performance and consistency.
By detecting the concentration of the AL etching liquid, the first etching time required to etch the aluminum film is calculated, and the aluminum film to be etched is immersed in the AL etching liquid for this time to form an aluminum pattern.
The consistency of aluminum graphic profile morphology is achieved, the etching cost is reduced, and the control process is simplified, and the software development requirements are low.
Smart Images
Figure CN120072644A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to an aluminum film etching method and device, and an etching machine. Background Art
[0002] In the semiconductor manufacturing process, aluminum (AL) etching solution is often used to wet-etch the aluminum-containing film layer (referred to as "aluminum film") to obtain aluminum patterns.
[0003] Among them, AL etching solution is a chemical solution specially used for wet etching of aluminum film. Its main components include: phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ) and acetic acid (HAC), etc. The etching rate of AL etching solution will gradually decrease as the concentration of the solution decreases, resulting in large differences in the profile morphology of aluminum patterns on the wafer surface at different times, thus affecting the performance and consistency of semiconductor chips.
[0004] However, the existing method of etching aluminum film using Al etching solution still cannot meet the requirements for the consistency of aluminum pattern cross-sectional morphology. Summary of the invention
[0005] The problem to be solved by the present invention is to improve the consistency of the cross-sectional morphology of aluminum graphics.
[0006] To solve the above problems, an embodiment of the present invention provides an aluminum film etching method, the method comprising:
[0007] Obtaining an aluminum film to be etched and an AL etching solution required for etching the aluminum film to be etched;
[0008] Detecting the concentration of the Al etching solution, and calculating the first etching time required for etching the aluminum film based on the concentration of the Al etching solution;
[0009] The aluminum film to be etched is immersed in the Al etching solution for the first etching time to form an aluminum pattern on the aluminum film to be etched.
[0010] In a possible embodiment, detecting the concentration of the AL etching solution includes:
[0011] The concentrations of phosphoric acid and nitric acid in the AL etching solution are detected.
[0012] In a possible embodiment, the calculating the first etching time required for etching the aluminum film based on the concentration of the Al etching solution includes:
[0013] Calculating the current etching rate of the AL etching solution based on the concentrations of phosphoric acid and nitric acid in the AL etching solution;
[0014] The first etching duration is calculated based on the thickness of the aluminum film and the current etching rate of the AL etching solution.
[0015] In a possible embodiment, calculating the current etching rate of the AL etching solution based on the concentrations of phosphoric acid and nitric acid in the AL etching solution includes:
[0016] Calculating a first product result between the concentration of phosphoric acid in the AL etching solution and the phosphoric acid concentration compensation coefficient, where the phosphoric acid concentration compensation coefficient is used to compensate for the influence of the change in the concentration of phosphoric acid in the AL etching solution on the etching rate;
[0017] Calculating a second product result between the concentration of nitric acid in the AL etching solution and the nitric acid concentration compensation coefficient, where the nitric acid concentration compensation coefficient is used to compensate for the influence of the change in the concentration of nitric acid in the AL etching solution on the etching rate;
[0018] Based on the sum of the first product result and the second product result, the current etching rate of the AL etching solution is obtained.
[0019] In a possible embodiment, the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient are calculated by the following method:
[0020] Collect the first etching rate, the first phosphoric acid concentration, and the first nitric acid concentration of the AL etching solution before it is used for etching, to obtain a first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration, and the corresponding concentration compensation coefficients;
[0021] Collect the second etching rate, the second phosphoric acid concentration, and the second nitric acid concentration of the AL etching solution before it needs to be replaced, to obtain a second linear relationship between the second etching rate, the second phosphoric acid concentration, the second nitric acid concentration, and the corresponding concentration compensation coefficients;
[0022] Based on the first linear relationship and the second linear relationship, the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient are calculated.
[0023] In a possible embodiment, the first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration, and the corresponding concentration compensation coefficients is as follows:
[0024] ER S =K N C 0 N +K P C 0 P
[0025] Wherein, ER SRepresents the first etching rate of the AL etching solution before being used for etching, K N Represents the nitric acid concentration compensation coefficient, K P Represents the phosphoric acid concentration compensation coefficient, C 0 N Represents the first nitric acid concentration, C 0 P Represents the first phosphoric acid concentration.
[0026] In a possible embodiment, the first etching rate, the first phosphoric acid concentration, and the first nitric acid concentration are: the average values of the first etching rate, the first phosphoric acid concentration, and the first nitric acid concentration of multiple concentrations of the AL etching solution.
[0027] In a possible embodiment, the second linear relationship between the second etching rate, the second phosphoric acid concentration, and the second nitric acid concentration and the corresponding concentration compensation coefficients is as follows:
[0028] ER E =K N C 1 N +K P C 1 P
[0029] Wherein, ER E Represents the second etching rate of the AL etching solution before the solution needs to be changed, K N Represents the nitric acid concentration compensation coefficient, K P Represents the phosphoric acid concentration compensation coefficient, C 1 N Represents the second nitric acid concentration, C 1 P Represents the second phosphoric acid concentration.
[0030] In a possible embodiment, the second etching rate, the second phosphoric acid concentration, and the second nitric acid concentration are: the average values of the second etching rate, the second phosphoric acid concentration, and the second nitric acid concentration of multiple concentrations of the AL etching solution.
[0031] In a possible embodiment, calculating the first etching duration based on the thickness of the aluminum film and the current etching rate of the AL etching solution includes:
[0032] Taking the quotient between the thickness of the aluminum film and the current etching rate of the AL etching solution as the first etching duration.
[0033] An embodiment of the present invention further provides an aluminum film etching device, and the device includes:
[0034] An acquisition unit, adapted to acquire the aluminum film to be etched and the AL etching solution required for etching the aluminum film to be etched;
[0035] A detection unit, adapted to detect the concentration of the AL etching solution and calculate a first etching duration required for etching the aluminum film based on the concentration of the AL etching solution;
[0036] An etching unit, adapted to immerse the aluminum film to be etched in the AL etching solution for the first etching duration to form an aluminum pattern on the aluminum film to be etched.
[0037] In a possible embodiment, the detection unit includes: a liquid medicine concentration detector for detecting the concentration of the AL etching solution.
[0038] In a possible embodiment, the liquid medicine concentration detector is used to detect the concentrations of phosphoric acid and nitric acid in the AL etching solution.
[0039] An embodiment of the present invention further provides an etching machine, which includes: the aluminum film etching device described in any one of the above.
[0040] An embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored, and the computer program is executed by a processor to implement the steps of the method described in any one of the above.
[0041] An embodiment of the present invention further provides an electronic device, including a memory and a processor, a computer program capable of running on the processor is stored on the memory, and when the processor runs the computer program, it executes the steps of the method described in any one of the above.
[0042] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:
[0043] Applying the solution of the present invention, before wet etching the aluminum film to be etched, first detect the concentration of the AL etching solution, calculate a first etching duration required for etching the aluminum film based on the concentration of the AL etching solution, and then immerse the aluminum film to be etched in the AL etching solution for the first etching duration to form an aluminum pattern on the aluminum film to be etched. By adopting the solution of the present invention, it is not necessary to replace the AL etching solution during the process of etching the aluminum film, thereby reducing the etching cost. Moreover, before each etching of the aluminum film, the concentration of the AL etching solution is detected and the required etching duration is calculated, so that the etching time can be determined more accurately, and an aluminum pattern with consistent morphology replacement can be obtained. In addition, the entire control process is simple, the requirement for software development is low, and it is easier to implement. Description of the Drawings
[0044] Figure 1 is a flowchart of a method for etching an aluminum film in an embodiment of the present invention;
[0045] Figure 2 andFigure 3 It is a schematic diagram of the cross-sectional structure during the etching process of the aluminum film;
[0046] Figure 4 It is a structural schematic diagram of an aluminum film etching device in an embodiment of the present invention. DETAILED DESCRIPTION
[0047] AL etching solution is a chemical solution specially used for wet etching of aluminum film. Its main components include: phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ) and acetic acid (HAC). The concentration of AL etching solution will affect the etching rate of AL etching solution, and the speed of etching rate will affect the sidewall morphology of the final aluminum pattern. For example, a faster etching rate will make the sidewall of the aluminum pattern too tilted or rough, and a slower etching rate will make the sidewall of the aluminum pattern more vertical and smooth. Therefore, in order to make the cross-sectional morphology of the aluminum pattern on the wafer surface at different times meet the consistency requirements, it is necessary to control the etching rate of AL etching solution.
[0048] In the existing wet etching process of aluminum film, the following two methods are mainly used to control the etching rate of the Al etching solution:
[0049] The first method is to frequently replace the AL etching solution and control the etching rate of the AL etching solution within a relatively stable range to maintain the consistency of the profile morphology of the aluminum pattern on the wafer surface at different times;
[0050] The second method is to simply divide the entire life cycle of the AL etching solution into three periods: early, middle and late stages. An etching time is set for each of the three periods (the longer the solution is used, the longer the set etching time is). The AL etching solutions of different periods are used within the fixed etching time of the corresponding period to maintain the consistency of the aluminum pattern profile morphology on the wafer surface at different stages as much as possible.
[0051] However, the method of controlling the stability of the AL etching rate by frequently replacing the AL etching solution results in a large waste of the AL etching solution, which is not conducive to the control of product production costs and is generally not used in semiconductor processes.
[0052] The solution that simply divides the entire life cycle of AL etching solution into three periods: early, middle and late. During semiconductor processing, it is necessary to control the etching time according to the current period of AL etching solution to ensure the etching consistency as much as possible. At the same time, the etching morphology of the wafer processed in the same period is better than the etching morphology of using one time in the entire liquid replacement cycle. However, only a rough correction of the etching rate of AL etching solution in different periods was made, and the influence of the solution rate change in the entire liquid replacement cycle was not completely eliminated.
[0053] To solve this problem, the present invention provides an aluminum film etching method. With this method, before each etching of the aluminum film, the concentration of the AL etching solution is first detected, and the required etching duration is calculated based on the detection result. Thus, it is not necessary to replace the AL etching solution, and better-shaped aluminum patterns can be obtained.
[0054] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following detailed description will be given to the specific embodiments of the present invention with reference to the accompanying drawings.
[0055] Refer to Figure 1 , an embodiment of the present invention provides an aluminum film etching method, and the method may include the following steps:
[0056] Step 11, obtain the aluminum film to be etched and the AL etching solution required for etching the aluminum film to be etched.
[0057] In a specific implementation, the aluminum film to be etched refers to a film layer containing metal AL. The material of the film layer containing metal AL is not limited as long as it contains metal AL. For example, a pure Al film layer (i.e., the aluminum film only contains aluminum atoms), an ALSICU film layer (i.e., the aluminum film is composed of aluminum atoms, silicon atoms, and copper atoms), or an ALSI film layer (i.e., the aluminum film is composed of aluminum atoms and silicon atoms).
[0058] In a specific implementation, before wet etching the aluminum film to be etched, a mask layer needs to be formed on the aluminum film to be etched. The mask layer is used to cover the areas on the aluminum film to be etched that do not need to be etched and expose the areas on the aluminum film to be etched that need to be etched. The mask layer can be a material insoluble in the AL etching solution, such as photoresist.
[0059] For example, Figure 2 is a schematic diagram of a semiconductor structure where an aluminum film to be etched is located. Refer to Figure 2 , the semiconductor structure may include: a substrate 20, an aluminum film 21 on the surface of the substrate 20, and a mask layer 22 on the surface of the aluminum film 21. The mask layer covers a part of the surface of the aluminum film 21 and has a pattern opening 231 corresponding to the aluminum pattern. Subsequently, the semiconductor structure covered with the mask layer 22 can be placed in the AL etching solution, and the AL etching solution etches the areas on the aluminum film 21 that are not covered by the mask layer 22 to form corresponding aluminum patterns (such as Figure 3 the aluminum pattern 221 shown).
[0060] In a specific implementation, the AL etching solution is a chemical solution specifically used for wet etching aluminum films, and its main components include: phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3), acetic acid (HAC), etc. The etching rate of the AL etching solution should be greater than the critical etching rate when the solution needs to be replaced. The so-called critical etching rate when the solution needs to be replaced is the lowest value of the etching rate that the AL etching solution needs to meet. Only when the etching rate of the AL etching solution is greater than or equal to the critical etching rate when the solution needs to be replaced can the etching of the aluminum film be completed and the desired aluminum pattern morphology be obtained. When the etching rate of the AL etching solution is lower than the critical etching rate when the solution needs to be replaced, the AL etching solution needs to be replaced.
[0061] Step 12: Detect the concentration of the AL etching solution, and calculate the first etching duration required for etching the aluminum film based on the concentration of the AL etching solution.
[0062] Through research by the inventor, it is found that the etching rate of the AL etching solution will gradually decrease as the concentrations of H 3 PO 4 , HNO 3 in the solution decay. Among them, phosphoric acid and nitric acid are the main components for etching AL metal. Nitric acid oxidizes AL metal to generate aluminum oxide (Al 2 O 3 ), and phosphoric acid will remove the generated aluminum oxide. The specific reaction mechanism is as follows:
[0063] 2Al + 6HNO 3 = Al 2 O 3 + 6NO 2 + 3H 2 O
[0064] Al 2 O 3 + 2H 3 PO 4 = 2AlPO 4 + 3H 2 O
[0065] Therefore, in the AL etching solution, the ratio of phosphoric acid and nitric acid will affect the etching rate of the AL etching solution, thereby affecting the sidewall morphology of the finally obtained aluminum pattern.
[0066] For this reason, in an embodiment of the present invention, the first etching duration required for etching the aluminum film can be calculated by detecting the concentrations of phosphoric acid and nitric acid in the AL etching solution. Specifically, based on the concentrations of phosphoric acid and nitric acid in the AL etching solution, the current etching rate of the AL etching solution can be calculated, and then based on the thickness of the aluminum film and the current etching rate of the AL etching solution, the first etching duration can be calculated. Thus, by inputting the thickness of the aluminum film into the etching machine, the etching machine can automatically calculate the etching duration and perform the wet etching operation, making the entire aluminum film etching more convenient.
[0067] In specific implementation, based on the influence of the concentration of phosphoric acid on the etching rate, a phosphoric acid concentration compensation coefficient can be obtained in advance, and based on the influence of the concentration of nitric acid on the etching rate, a nitric acid concentration compensation coefficient can be obtained. Then, based on the concentrations of phosphoric acid and nitric acid in the AL etching solution and the previously obtained phosphoric acid concentration compensation coefficient and nitric acid concentration compensation coefficient, the etching rate of the AL etching solution can be obtained. Finally, based on the thickness of the aluminum film and the etching rate of the AL etching solution, the first etching duration can be calculated.
[0068] In specific implementation, the first etching rate, the first phosphoric acid concentration, and the first nitric acid concentration of the AL etching solution before it is used for etching can be collected to obtain a first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration, and the corresponding concentration compensation coefficients.
[0069] Among them, the AL etching solution used to obtain the first etching rate, the first phosphoric acid concentration, and the first nitric acid concentration can have the same concentration or different concentrations as the AL etching solution used for wet etching of the aluminum film to be etched, and there is no limitation here. The first etching rate of the AL etching solution before it is used for etching refers to the etching rate of the AL etching solution before it is used for any etching, that is, the etching rate after the AL etching solution is just obtained and the temperature is stable.
[0070] Specifically, the first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration, and the corresponding concentration compensation coefficients is as follows:
[0071] ER S =K N C 0 N +K P C 0 P (1)
[0072] Among them, ER S represents the first etching rate of the AL etching solution with various concentrations before it is used for etching. K N represents the nitric acid concentration compensation coefficient, and K P represents the phosphoric acid concentration compensation coefficient, and C 0 N represents the first nitric acid concentration, and C 0 P represents the first phosphoric acid concentration.
[0073] In an embodiment of the present invention, ER S can be the average value of the first etching rates of the AL etching solution with various concentrations, and C 0 N can be the average value of the first nitric acid concentrations of the AL etching solution with various concentrations before it is used for etching, and C 0P It is the average value of the first phosphoric acid concentration in AL etching solutions with various concentrations before being used for etching. Among them, the AL etching solutions with various concentrations refer to multiple portions of AL etching solutions, and the concentrations of phosphoric acid and nitric acid in any two of these multiple portions of AL etching solutions are not completely the same.
[0074] By collecting the etching rates of multiple AL etching solutions before being used for etching, as well as the average values of the phosphoric acid concentration and the average value of the nitric acid concentration in the multiple AL etching solutions, to establish the first linear relationship, it can make the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient obtained based on the first linear relationship more accurate subsequently, and thus can more accurately reflect the influence of the phosphoric acid concentration and the nitric acid concentration on the etching rate.
[0075] In a specific implementation, the second etching rate, the concentrations of phosphoric acid and nitric acid of the AL etching solution before the solution needs to be changed can be collected to obtain the first linear relationship between the second etching rate, the concentrations of phosphoric acid and nitric acid and the corresponding concentration compensation coefficients.
[0076] Among them, the second etching rate of the AL etching solution before the solution needs to be changed refers to the lowest etching rate at which the AL etching solution can meet the requirements of the etching morphology of the aluminum pattern. When the etching rate of the AL etching solution is lower than the second etching rate, the AL etching solution needs to be replaced to meet the requirements of the etching morphology of the aluminum pattern.
[0077] Specifically, the second linear relationship between the second etching rate, the second phosphoric acid concentration and the second nitric acid concentration and the corresponding concentration compensation coefficients is as follows:
[0078] ER E =K N C 1 N +K P C 1 P (2)
[0079] Among them, ER E represents the second etching rate of the AL etching solution before the solution needs to be changed, K N represents the nitric acid concentration compensation coefficient, K P represents the phosphoric acid concentration compensation coefficient, C 1 N represents the second nitric acid concentration, C 1 P represents the second phosphoric acid concentration.
[0080] In an embodiment of the present invention, ER E can be the average value of the second etching rates of AL etching solutions with various concentrations, C 1 NCan be the average value of the second nitric acid concentration in AL etching solutions of various concentrations before the need for solution replacement, C 0 P Is the average value of the second phosphoric acid concentration in AL etching solutions of various concentrations before the need for solution replacement. Among them, the AL etching solutions of various concentrations refer to multiple portions of AL etching solutions, and the concentrations of phosphoric acid and nitric acid in any two portions of the AL etching solutions are not exactly the same.
[0081] By collecting the etching rates of various AL etching solutions before the need for solution replacement, as well as the average value of the second phosphoric acid concentration and the average value of the second nitric acid concentration of various AL etching solutions before the need for solution replacement, to establish the second linear relationship, it can make the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient obtained subsequently based on the second linear relationship more accurate, and thus can more accurately reflect the influence of phosphoric acid concentration and nitric acid concentration on the etching rate.
[0082] In a specific implementation, by fitting the equations shown in multiple formulas (1) and the equations shown in formula (2), the phosphoric acid concentration compensation coefficient K P And the nitric acid concentration compensation coefficient K N Value.
[0083] In a specific implementation, after obtaining the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient, the first product result between the concentration of phosphoric acid in the AL etching solution and the phosphoric acid concentration compensation coefficient can be calculated, and the second product result between the concentration of nitric acid in the AL etching solution and the nitric acid concentration compensation coefficient can be calculated. Subsequently, based on the sum of the first product result and the second product result, the current etching rate of the AL etching solution can be obtained.
[0084] Specifically, assuming that the concentration of phosphoric acid in the obtained AL etching solution is C P1 , and the concentration of nitric acid is C N1 , then the current etching rate ER 1 = K P C P1 + K N C N1 . Based on the thickness of the aluminum film and the current etching rate of the AL etching solution, when calculating the first etching duration, the quotient between the thickness of the aluminum film and the current etching rate of the AL etching solution can be used as the first etching duration, that is, T1 = X / ER1 = X / (K P C P1 + K N C N1 ), where X represents the thickness of the aluminum film to be etched.
[0085] It should be noted that in a specific implementation, when obtaining the phosphoric acid concentration compensation coefficient KP and nitric acid concentration compensation coefficient K N During the collection process of the AL etching solution N , the collected AL etching solution can be the AL etching solution used to form an aluminum pattern having the same shape as the aluminum film to be etched, so as to improve the phosphoric acid concentration compensation coefficient K P and nitric acid concentration compensation coefficient K N accuracy.
[0086] Step 13: Immerse the aluminum film to be etched in the AL etching solution and reach the first etching duration, so as to form an aluminum pattern on the aluminum film to be etched.
[0087] In a specific implementation, after immersing the aluminum film to be etched in the AL etching solution and reaching the first etching duration T1, separate the aluminum film to be etched from the AL etching solution. For example, the aluminum film to be etched can be taken out of the AL etching solution, and then the mask layer on the surface of the aluminum film to be etched can be removed, and the semiconductor structure shown in Figure 3 can be obtained.
[0088] By adopting the solution of the present invention, only the thickness of the aluminum film to be etched needs to be input, and the etching duration required for each etching can be obtained more accurately by detecting the concentration of the AL etching solution. The obtained aluminum pattern morphology has better consistency. At the same time, the cost control is better than the existing process technology, and the software requirement costs less.
[0089] In order to enable those skilled in the art to better understand and implement the present invention, the corresponding device and etching machine of the above method will be described in detail below.
[0090] Referring to Figure 4 , an embodiment of the present invention further provides an aluminum film etching device 40. The device 40 may include: an acquisition unit 41, a detection unit 42, and an etching unit 43. Among them:
[0091] The acquisition unit 41 is adapted to acquire the aluminum film to be etched and the AL etching solution required for etching the aluminum film to be etched;
[0092] The detection unit 42 is adapted to detect the concentration of the AL etching solution and calculate the first etching duration required for etching the aluminum film based on the concentration of the AL etching solution;
[0093] The etching unit 43 is adapted to immerse the aluminum film to be etched in the AL etching solution and reach the first etching duration, so as to form an aluminum pattern on the aluminum film to be etched.
[0094] In a specific implementation, the detection unit 42 may include a liquid medicine concentration detector. After the acquisition unit 41 acquires the aluminum film to be etched and the AL etching solution required for etching the aluminum film to be etched, the liquid medicine concentration detector can be inserted into the AL etching solution to detect the concentration of the AL etching solution, mainly detecting the concentrations of phosphoric acid and nitric acid in the AL etching solution. Then, based on the linear relationship between the concentrations of phosphoric acid and nitric acid and the etching rate, the first etching duration can be calculated. Finally, the etching unit 43 immerses the aluminum film to be etched into the AL etching solution until the immersion duration reaches the first etching duration, and then separates the aluminum film to be etched from the AL etching solution, thereby forming an aluminum pattern with better consistency in cross-sectional morphology.
[0095] Regarding the acquisition unit 41, the detection unit 42, and the etching unit 43, specific implementation can refer to the descriptions of steps 11 to 13 above, and will not be elaborated here.
[0096] An embodiment of the present invention further provides an etching machine tool, and the etching machine tool includes the above-mentioned aluminum film etching device 40.
[0097] By using the aluminum film etching device 40 in the embodiment of the present invention, only the thickness of the aluminum film to be etched needs to be input into the etching machine tool, and the etching machine tool can more accurately obtain the etching duration of each etching by detecting the liquid medicine concentration, thereby making the morphology of the aluminum pattern have better consistency. At the same time, it has better cost control than the existing process technology and requires less software cost.
[0098] An embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored, and the computer program is executed by a processor to implement the steps of any of the above methods.
[0099] In a specific implementation, the computer-readable storage medium may include: ROM, RAM, a magnetic disk, an optical disc, etc.
[0100] An embodiment of the present invention further provides an electronic device, and the electronic device includes a memory and a processor. A computer program capable of running on the processor is stored on the memory, and when the processor runs the computer program, it executes the steps of any of the above methods.
[0101] Regarding each device and product described in the above embodiments, each module / unit included therein can be a software module / unit, a hardware module / unit, or can be partly a software module / unit and partly a hardware module / unit. For example, for each device and product applied to or integrated into a chip, each module / unit included therein can be implemented in the form of hardware such as circuits, or at least part of the module / unit can be implemented in the form of a software program that runs on a processor integrated inside the chip, and the remaining part (if any) of the module / unit can be implemented in the form of hardware such as circuits; for each device and product applied to or integrated into a chip module, each module / unit included therein can be implemented in the form of hardware such as circuits, and different modules / units can be located in the same component (such as a chip, a circuit module, etc.) or different components of the chip module, or at least part of the module / unit can be implemented in the form of a software program that runs on a processor integrated inside the chip module, and the remaining part (if any) of the module / unit can be implemented in the form of hardware such as circuits; for each device and product applied to or integrated into a terminal, each module / unit included therein can be implemented in the form of hardware such as circuits, and different modules / units can be located in the same component (such as a chip, a circuit module, etc.) or different components inside the terminal, or at least part of the module / unit can be implemented in the form of a software program that runs on a processor integrated inside the terminal, and the remaining part (if any) of the module / unit can be implemented in the form of hardware such as circuits.
[0102] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.
Claims
1. A method for etching an aluminum film, characterized in that: include: Obtaining an aluminum film to be etched and an AL etching solution required for etching the aluminum film to be etched; Detecting the concentration of the Al etching solution, and calculating the first etching time required for etching the aluminum film based on the concentration of the Al etching solution; The aluminum film to be etched is immersed in the Al etching solution for the first etching time to form an aluminum pattern on the aluminum film to be etched.
2. The aluminum film etching method according to claim 1, characterized in that: The detecting the concentration of the AL etching solution comprises: The concentrations of phosphoric acid and nitric acid in the AL etching solution are detected.
3. The aluminum film etching method according to claim 1, characterized in that: The calculating the first etching time required for etching the aluminum film based on the concentration of the Al etching solution includes: Calculating the current etching rate of the AL etching solution based on the concentrations of phosphoric acid and nitric acid in the AL etching solution; The first etching time is calculated based on the thickness of the aluminum film and the current etching rate of the Al etching solution.
4. The aluminum film etching method according to claim 3, characterized in that: The step of calculating the current etching rate of the AL etching solution based on the concentrations of phosphoric acid and nitric acid in the AL etching solution comprises: Calculating a first product result between the concentration of phosphoric acid in the AL etching solution and a phosphoric acid concentration compensation coefficient, wherein the phosphoric acid concentration compensation coefficient is used to compensate for the influence of the concentration change of phosphoric acid in the AL etching solution on the etching rate; Calculating a second product result between the concentration of nitric acid in the AL etching solution and a nitric acid concentration compensation coefficient, wherein the nitric acid concentration compensation coefficient is used to compensate for the influence of the concentration change of nitric acid in the AL etching solution on the etching rate; Based on the sum of the first product result and the second product result, the current etching rate of the AL etching solution is obtained.
5. The aluminum film etching method according to claim 4, characterized in that: The phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient are calculated using the following method: Collecting a first etching rate, a first phosphoric acid concentration, and a first nitric acid concentration of the Al etching solution before being used for etching, and obtaining a first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration, and the corresponding concentration compensation coefficients; Collecting the second etching rate, the second phosphoric acid concentration and the second nitric acid concentration of the AL etching solution before the solution needs to be replaced, and obtaining a second linear relationship between the second etching rate, the second phosphoric acid concentration and the second nitric acid concentration and the corresponding concentration compensation coefficient; Based on the first linear relationship and the second linear relationship, the phosphoric acid concentration compensation coefficient and the nitric acid concentration compensation coefficient are calculated.
6. The aluminum film etching method according to claim 5, characterized in that: The first linear relationship between the first etching rate, the first phosphoric acid concentration, the first nitric acid concentration and the corresponding concentration compensation coefficient is as follows: IS S =K N C 0 N +K P C 0 P Among them, ER S Indicates the first etching rate of the AL etching solution before it is used for etching, K N represents the nitric acid concentration compensation coefficient, K P represents the phosphoric acid concentration compensation coefficient, C 0 N Indicates the first nitric acid concentration, C 0 P represents the first phosphoric acid concentration.
7. The aluminum film etching method according to claim 5, characterized in that: The first etching rate, the first phosphoric acid concentration and the first nitric acid concentration are: average values of the first etching rates, the first phosphoric acid concentration and the first nitric acid concentration of Al etching solutions of various concentrations.
8. The aluminum film etching method according to claim 5, characterized in that: The second linear relationship between the second etching rate, the second phosphoric acid concentration, the second nitric acid concentration and the corresponding concentration compensation coefficient is as follows: IS E =K N C 1 N +K P C 1 P Among them, ER E Indicates the second etching rate of the AL etching solution before the solution needs to be replaced, K N represents the nitric acid concentration compensation coefficient, K P represents the phosphoric acid concentration compensation coefficient, C 1 N Indicates the concentration of the second nitric acid, C 1 P It represents the concentration of the second phosphoric acid.
9. The aluminum film etching method according to claim 8, characterized in that: The second etching rate, the second phosphoric acid concentration and the second nitric acid concentration are: average values of the second etching rates, the second phosphoric acid concentration and the second nitric acid concentration of Al etching solutions of various concentrations.
10. The aluminum film etching method according to claim 3, characterized in that: The first etching time is calculated based on the thickness of the aluminum film and the current etching rate of the Al etching solution, including: The quotient of the thickness of the aluminum film and the current etching rate of the Al etching solution is used as the first etching time.
11. An aluminum film etching device, characterized in that: include: An acquisition unit, adapted to acquire the aluminum film to be etched and the AL etching solution required for etching the aluminum film to be etched; A detection unit, adapted to detect the concentration of the Al etching solution and calculate a first etching time required for etching the aluminum film based on the concentration of the Al etching solution; The etching unit is adapted to immerse the aluminum film to be etched into the Al etching solution for the first etching time to form an aluminum pattern on the aluminum film to be etched.
12. The aluminum film etching device according to claim 11, characterized in that: The detection unit includes: a liquid concentration detector for detecting the concentration of the AL etching solution.
13. The aluminum film etching device according to claim 12, characterized in that: The liquid concentration detector is used to detect the concentrations of phosphoric acid and nitric acid in the AL etching solution.
14. An etching machine, characterized in that: include: An aluminum film etching device as described in any one of claims 11 to 13.