Semiconductor testing device and testing method

Abstract

The invention provides a semiconductor test device and method, and the device comprises a test piece, the test piece is provided with a plurality of semiconductor devices, and each semiconductor device comprises a test part; the tip part of the probe is in contact with the surface of the test piece; the test element is electrically connected to the probe tail part of the probe, and the test element applies variable voltage or variable current to the test piece; wherein when the variable voltage is applied, the test element acquires current data of the test piece until the numerical range of the variable voltage is traversed or the current data exceeds the current threshold range, and when the variable current is applied, the test element acquires voltage data of the test piece until the voltage data exceeds the voltage threshold range or the voltage data exceeds the voltage threshold range. According to the semiconductor testing device and the semiconductor testing method provided by the invention, the accuracy of semiconductor testing can be improved, so that the manufacturing yield of semiconductor products is improved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing technology, and particularly relates to a semiconductor testing device and a testing method. Background Art

[0002] The design of integrated circuits is very complex. A single chip often uses millions to billions of gate counts, and the electrical parameters of each logic gate and other devices must meet the standards simultaneously, otherwise the chip may not operate properly. And a single wafer usually has tens of thousands of chips, so it is quite important to maintain the uniformity of the manufacturing process. In the wafer manufacturing process, the monitoring of the key electrical and physical properties of the wafer not only requires the entire wafer to meet the specifications (SPEC), but also requires each produced wafer to meet this standard. Therefore, it is necessary to introduce Wafer Acceptance Test (WAT) to improve quality control.

[0003] In the wafer acceptance test, the state of the test components will directly affect the accuracy of the test. In the test system, it is extremely difficult to directly and timely detect abnormalities in the test components. Therefore, the accuracy of WAT data is unstable, resulting in abnormalities in semiconductor products. Summary of the Invention

[0004] The purpose of the present invention is to provide a semiconductor testing device and a testing method to improve the accuracy of semiconductor testing, thereby improving the manufacturing yield of semiconductor products.

[0005] To solve the above technical problems, the present invention is realized through the following technical solutions:

[0006] The present invention provides a semiconductor testing device, including:

[0007] A test piece, on which a variety of semiconductor devices are provided, and the semiconductor devices include a test part;

[0008] A probe, the tip of which is in contact with the surface of the test piece; and

[0009] A test element, electrically connected to the tail of the probe, and the test element applies a variable voltage or a variable current to the test piece;

[0010] Wherein when applying the variable voltage, the test element acquires the current data of the test piece until the current data exceeds the current threshold range or traverses the numerical range of the variable voltage. When applying the variable current, the test element acquires the voltage data of the test piece until the voltage data exceeds the voltage threshold range or the voltage data exceeds the voltage threshold range.

[0011] In an embodiment of the present invention, the variable voltage and the variable current change with time, and the variable voltage and the variable current change in a logarithmic form, a linear form, a pulse form, or an increasing form of a constant order.

[0012] In an embodiment of the present invention, the test element includes a first power supply, and the first power supply is electrically connected to the test piece and outputs the variable voltage to the test piece.

[0013] In an embodiment of the present invention, the test element includes a second power supply, and the second power supply is electrically connected to the test piece and outputs the variable current to the test piece. The first end of the second power supply is electrically connected to the first end of the first power supply, and the second end of the second power supply is electrically connected to the second end of the first power supply.

[0014] In an embodiment of the present invention, the semiconductor test device includes an analog-to-digital conversion module, and the analog-to-digital conversion module is electrically connected to the test element and outputs the voltage data and the current data.

[0015] In an embodiment of the present invention, the test element includes a selection switch. One end of the selection switch is electrically connected to the first power supply or the second power supply, and the other end of the selection switch is electrically connected to the analog-to-digital conversion module.

[0016] In an embodiment of the present invention, the test element includes a plurality of range switches. One end of the range switch is electrically connected to the selection switch, and the other end is electrically connected to the analog-to-digital conversion module. At most one of the plurality of range switches is closed at the same time.

[0017] In an embodiment of the present invention, the test element includes a plurality of test electric meters for testing the voltage data or the current data of the test piece. The test electric meter has a plurality of ranges, and when different range switches are closed, the test electric meter switches the test range.

[0018] The present invention provides a semiconductor test method, including the following steps:

[0019] Provide a test piece, and a variety of semiconductor devices are arranged on the test piece, wherein the semiconductor device includes a test part;

[0020] Locate the probe, wherein the tip of the probe contacts the surface of the test piece and is electrically connected to the test part, and the tail of the probe is electrically connected to the test element;

[0021] Apply a variable voltage to the test piece through the test element, and obtain the current data of the test piece until the current data exceeds the current threshold range;

[0022] If the numerical range of the variable voltage is traversed and the current data does not exceed the current threshold range, apply a variable current to the test piece through the test element, and obtain the voltage data of the test piece until the voltage data exceeds the voltage threshold range; and

[0023] If the current data exceeds the current threshold range or the voltage data exceeds the voltage threshold range, stop the test and repair the test element.

[0024] In an embodiment of the present invention, the test element includes a plurality of range switches, and the steps of obtaining the current data or the voltage data include:

[0025] Change the closed range switch to adjust the value of the variable voltage or the variable current; and

[0026] When the current data or the voltage data exceeds the threshold range, keep the range switch closed, stop the test, and repair the test piece.

[0027] As described above, the present invention provides a semiconductor test device and a test method. The unexpected technical effect of the present application is that it can detect in a timely and comprehensive manner whether there is a fault in the test element during the WAT test, and feedback to the tester in a timely manner when a fault is detected. Moreover, the present invention can help the tester quickly locate the test fault. By setting the test piece, the present invention can comprehensively obtain the working condition of the test element, making the test more comprehensive and greatly improving the test reliability, thereby improving the manufacturing yield of semiconductor products.

[0028] Of course, it is not necessary for any product implementing the present invention to achieve all the above advantages simultaneously. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for describing the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0030] Figure 1 It is a schematic structural diagram of a test element in an embodiment of the present invention.

[0031] Figure 2 It is a schematic working diagram of a test element in an embodiment of the present invention.

[0032] Figure 3 Schematic diagram of a semiconductor testing device in an embodiment of the present invention.

[0033] Figure 4 Schematic diagram of scribe lanes and chip particle distribution on the surface of a wafer in an embodiment of the present invention.

[0034] Figure 5 Flowchart of a semiconductor testing method in an embodiment of the present invention.

[0035] Figure 6 Schematic diagram of applying a variable voltage in an embodiment of the present invention.

[0036] Figure 7 Schematic diagram of applying a variable voltage in another embodiment of the present invention.

[0037] Figure 8 Schematic diagram of applying a variable current in an embodiment of the present invention.

[0038] Figure 9 Schematic diagram of applying a variable current in another embodiment of the present invention.

[0039] In the figure: 100, test element; 101, adjustable power supply; 102, dual-winding transformer; 103, selection switch; 104, ammeter; 105, range switch; 106, voltmeter; 200, analog-to-digital conversion module; 300, test piece; 301, chip particle; 302, scribe lane; 310, pad; 400, probe; 410, tip portion; 420, needle tail portion. Detailed implementation manners

[0040] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0041] The wafer acceptance test is carried out after the wafer product is taped out and before quality inspection, and is used to measure the electrical parameters of the test key. The purpose of the wafer acceptance test is to detect the process conditions of each wafer product by testing the electrical parameters of the test keys on the wafer, evaluate the quality and stability of the semiconductor manufacturing process, and determine whether the wafer product meets the electrical specification requirements of the process technology platform. Therefore, the WAT data can be used as a quality certificate for wafer product delivery. In addition, the WAT data can also reflect the actual production situation of the production line. By collecting and analyzing the WAT data, the situation of the production line can be monitored, the trend of production line changes can be judged, and early warnings can be given for possible situations. Please refer to Figure 1 As shown, the semiconductor test device for performing the wafer acceptance test includes a test element 100 and an analog-to-digital conversion module 200. The test element 100 includes a test circuit. The test circuit includes a voltage transformation branch, a selection switch 103, an ammeter 104, a range switch 105, and a voltmeter 106. In the present invention, one end of the voltage transformation branch is used as a preset port 107, and the other end is electrically connected to the selection switch 103. One end of the selection switch 103 is electrically connected to the ammeter 104, and the ammeter 104 is electrically connected to the range switch 105. One end of the voltmeter 106 is electrically connected to the preset port 107, and the other end is electrically connected to the common end of the ammeter 104 and the range switch 105. The voltage transformation branch includes a first branch and a second branch, and the first branch is connected in parallel with the second branch. The first branch includes an adjustable power supply 101. In this embodiment, the adjustable power supply 101 is a DC power supply, and one end of the adjustable power supply 101 is electrically connected to the preset port 107, and the other end of the adjustable power supply 101 is used as a voltage test port V S wherein the second branch includes a dual-winding transformer 102. One end of the dual-winding transformer 102 is electrically connected to the preset port 107, and the other end of the dual-winding transformer 102 is used as a current test port I S In this embodiment, in the non-working state, the voltage test port V S and the current test port I S are both in a floating state. In the working state, the selection switch 103 is electrically connected to any one of the voltage test port V S and the current test port I S to test the voltage data and current data of different objects. It should be noted that the preset port 107 can be grounded or can be connected to various electrical components according to actual use conditions, such as capacitors. The present invention does not limit this.

[0042] Please refer to Figure 1 and Figure 2As shown, in an embodiment of the present invention, one end of the range switch 105 is electrically connected to the ammeter 104 and the voltmeter 106, and the other end of the range switch 105 is electrically connected to the analog-to-digital conversion module 200. Among them, there are multiple range switches 105, which are respectively connected to the ammeters 104 and voltmeters 106 with different ranges. The multiple range switches 105 are connected to the analog-to-digital conversion module 200. In the working state, only one range switch 105 is closed, so as to electrically connect the corresponding test element 100 to the analog-to-digital conversion module 200. The current data and voltage data of the ammeter 104 and the voltmeter 106 pass through the analog-to-digital conversion module 200, and convert the analog voltage signal and the analog current signal into digital signals for output. Among them, before the test element 100 works, an initialization operation is performed on the test element 100 to make the ammeter 104 and the voltmeter 106 return to zero. And all the range switches 105 are adjusted to the floating state. This initialization process can ensure that subsequent tests are not affected by previous tests, thereby improving the accuracy of data. However, it will also cause faults in the test element 100 not to be detected and located in time. For example, there is a problem with the connection of a certain range switch 105, resulting in the wrong corresponding range switch 105 being closed, so the measured data may be inaccurate. And the initialization operation disconnects all the range switches 105. When data errors are found, it is very difficult to locate the fault position, and data errors cannot be detected in time. Therefore, after the data is obtained, it still depends on manual inspection of the data to ensure that the data is accurate. There are hundreds or thousands of chip particles 301 on a single wafer, and the corresponding test structures are extremely diverse. In a single test, the amount of test data is large. Therefore, by the time the data is checked, a round of test time has been wasted. During the test process, the ranges of the ammeter 104 and the voltmeter 106 are changing, so the used range switches 105 are constantly changing. Before testing the product, it is impossible to comprehensively reflect the actual working state of the test piece 300 by inspecting the test piece 300 with fixed parameters, and the coverage of the test state of the test piece 300 is extremely limited. Therefore, the reliability of the current test equipment can only reach 15% after initialization. Once a problem occurs, it is extremely easy to cause the machine to stop or data errors and omissions, thereby reducing the process efficiency and process yield.

[0043] Please refer to Figures 1 to 3 As shown, the semiconductor test device provided by the present invention includes a test piece 300 and a probe 400. Among them, the test piece 300 is a silicon substrate forming a semiconductor structure. Among them, the test piece 300 includes a substrate and a silicon layer provided above the substrate. The substrate is, for example, silicon (Si), silicon carbide (SiC), sapphire (Al 2 O 3 ), gallium arsenide (GaAs), lithium aluminate (LiAlO 2) semiconductor substrate materials such as etc., a silicon layer is formed above the substrate. And semiconductor devices are provided on the test piece 300. The semiconductor devices can be one or several of Field Effect Transistor (FET), Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Complementary Metal Oxide Semiconductor (CMOS), Insulated Gate Bipolar Transistor (IGBT), Fast Recovery Diode (FRD), Figh Efficiency Diode (HED), zener diode, high-frequency diode, Light-Emitting Diode (LED), Gate Turn off Thyristor (GTO), Light Triggered Thyristor (LTT), Thyristor, Charge Coupled Device (CCD image sensor), Digital Signal processor (DSP), Photo Relay or Micro Processor and other semiconductor devices.

[0044] Please refer to Figures 1 to 4 As shown, in an embodiment of the present invention, a test structure TK and pads 310 are provided on the test piece 300, wherein the pads 310 are provided on the top layer of the test structure TK and are connected to the test structure TK. Among them, the wafer acceptability test is based on the test structure TK, and the test structure TK is placed in the scribe lane 302. As Figure 4 shown, Figure 4For illustrative purposes only, chip particles 301 and scribe lines 302 are provided on the test piece 300. Among them, multiple chip particles 301 are distributed on the test piece 300 and, on the premise of being spaced at a preset distance, cover the test piece 300 as much as possible. Among them, the scribe lines 302 are distributed in a grid pattern, and the scribe lines 302 are provided among adjacent chip particles 301. The test structure TK is provided in the scribe lines 302. In the present invention, there are various types of test structures TK, and specifically include active devices, passive devices, isolation structures, etc. on the wafer process platform. In the present invention, the test structure TK can be and is not limited to MOS transistors, Gate Oxide Integrity (GOI), polysilicon gate field effect transistors, N-type junctions, P-type junctions, sheet resistance Rs, contact resistance Rc, isolation structures, metal capacitors (MIM Capacitor), and polysilicon capacitors (PIP Capacitor), etc. Specifically, the device under test is the working piece to be tested, the test piece 300 is a standard piece, and the test piece 300 includes all the semiconductor structures to be tested of the device under test.

[0045] Please refer to Figures 1 to 4 As shown, in an embodiment of the present invention, the probe 400 includes a tip portion 410 and a tail portion 420. Among them, the diameter of the tip portion 410 is smaller than the diameter of the tail portion 420. During testing, the tip portion 410 is connected to the surface of the test piece 300. Specifically, the tip portion 410 is electrically connected to the pad 310. The first port and the second port are provided on the tail portion 420, where the first port is electrically connected to the test element 100 and the second port is grounded. During testing, the probe 400 is moved so that the tip portion 410 contacts the test position of the test piece 300, and then the corresponding range switch 105 is closed, thereby obtaining the current data and voltage data of the test piece 300. Then, the current data and voltage data monitored by the test element 100 are converted into digital signals through the analog-to-digital conversion module 200 and transmitted to and stored in the host computer. During testing, a voltage or current is applied to the semiconductor structure, and the corresponding current data or voltage data is tested. If the measured current data or voltage data meets the standard, the test passes.

[0046] Please refer to Figures 1 to 5As shown, the present invention also provides a semiconductor testing method based on a semiconductor testing device. The semiconductor testing method includes step S10 of performing a variable voltage test on the test piece 300. Step S10 includes step S11 and step S12. In step S11, a variable voltage is applied to the test piece 300, and the current data of the test piece 300 is monitored in real time. In this embodiment, the variable voltage is a changing supply voltage. Applying a variable voltage to the test piece 300 is applying a conduction voltage to the gate tube of the test piece 300. The value of the variable voltage traverses the range of the voltmeter 106. Specifically, the variable voltage includes multiple voltage values. There can be multiple or one voltage value in the same range, and the present invention does not limit this. It should be noted that, for example, a voltage value of 1V can use a voltage range of 0 - 5A or a voltage range of 0 - 15V. In this embodiment, the voltage value of 1V is classified into the voltage range that can most clearly display it. Therefore, the voltage value of 1V belongs to the voltage range of 0 - 5V. The ability of a voltage value to be clearly displayed can be represented by the distance of the voltage value from the middle of the voltmeter 106. The closer the voltage value is to the median of the range, the more clearly the voltage value can be measured. Therefore, in this embodiment, according to the difference between the median of the range and the voltage value, the corresponding range of the variable voltage is selected. When the voltage value of the variable voltage changes, the closed range switch 105 is also correspondingly changed to adjust the range used to test the variable voltage. In this embodiment, the voltage value of the variable voltage can be a machine-generated value or a voltage value preset by the tester. Specifically, according to the type of the device under test, the variable voltage has a corresponding test value range. The present invention does not limit the specific values. Among them, the change in the value of the variable voltage can be randomly selected, or the voltage values can be sequentially selected from small to large or from large to small according to the value range of the variable voltage.

[0047] Please refer to Figures 1 to 5 As shown, in an embodiment of the present invention, in step S11, while changing the voltage data, at different variable voltages, the current data measured by the ammeter 104 also changes continuously. In this embodiment, while adjusting the voltage value of the variable voltage, the change in the current data is monitored in real time through the ammeter 104. In this embodiment, the current threshold is set according to the voltage range. The current data corresponding to the voltage range is used as the current threshold. Specifically, for example, a voltage value of 5V corresponds to 1 μA, then the current corresponding to the voltage range of 0 - 5V is 0 - 1 μA. When the voltage range is 0 - 5V, the current threshold is 1 μA. In step S12, when the variable voltage is, for example, 3V and the current data exceeds 1 μA, step S30 is executed. If any current data is less than or equal to the current threshold, the test passes, and step S20 is continued.

[0048] Please refer toFigure 1 , Figure 3 , Figure 5 and Figure 6 As shown in Figure 6 , in an embodiment of the present invention, in step S11, the variable voltage includes a starting voltage V start and an ending voltage V stop . Wherein the starting voltage V start >0. Wherein the difference between the ending voltage V stop and the starting voltage V start is less than the maximum range of the variable voltage. As shown in Figure 6 , the voltage value of the variable voltage U has, for example, 6 values, and they are respectively the starting voltage V start , voltage V 1 , voltage V 2 , voltage V 3 , voltage V 4 and the ending voltage V stop . In this embodiment, the duration of the starting voltage V start is longer than the duration of the other voltage values. Specifically, the measurement time of the ammeter 104 is t m , and the delay time of the test element 100 is t d . The duration of the variable voltage is t 0 . After the semiconductor test device is powered on, the starting voltage V start is applied to the test piece 300, and after the starting voltage V start reaches the holding time, a test command is issued to the semiconductor test device to ensure that the variable voltage can be stably applied to the test piece 300. The holding time of the starting voltage V start is t h . In this embodiment, the duration t 0 of the variable voltage is the sum of the delay time t d and the measurement time t m , that is, t 0 =t d +t m . Wherein, the holding time t h is greater than or equal to the duration t 0 of the variable voltage to ensure that the variable voltage can be stably applied to the gate terminal of the test piece 300 during the test stage of the test piece 300 within the duration t 0 . In this embodiment, the starting voltage V start is applied to the test piece 300, and after the starting voltage V start is held for t h , a test instruction is issued to the test element 100. The time when the test instruction reaches the semiconductor test device and the test element 100 responds to the test command is the delay time t d . During the delay time t dAfter that, the current data of the ammeter 104 is acquired, where the time for acquiring the current data and outputting the current data as a digital signal is the measurement time t m . At the measurement time t m , the current data is obtained and stored in the host. It should be noted that the present invention does not limit the host, and the host is a device for performing test control. Then, a voltage V 1 is applied to the test piece 300, and a test instruction is issued to the semiconductor test device. After a delay time t d , the ammeter 104 executes the instruction and obtains the current data. At the measurement time t m , the current data is output and stored in the host. Among them, while changing the voltage value of the variable voltage, the closed range switch 105 is adjusted to adjust the range of the voltmeter 106 to a range adapted to the variable voltage. And so on until the variable voltage reaches the termination voltage V stop , the current data measured under the termination voltage V stop is output and stored, and step S11 ends.

[0049] Please refer to Figure 1 , Figure 3 , Figures 5 to 7 . As shown, in an embodiment of the present invention, in step S11, multiple voltage values of the variable voltage are distributed in an arithmetic progression. Specifically, multiple voltage values of the variable voltage increase in sequence from the starting voltage V start to the termination voltage V stop . In this embodiment, the voltage arithmetic increment of the variable voltage is V step . For example, the difference between the voltage V 2 and the voltage V 1 is the arithmetic increment V step , and the difference between the voltage V 3 and the voltage V 2 is the arithmetic increment V step , and so on. In other embodiments of the present invention, on the premise of traversing the range of the voltmeter 106, multiple voltage values may also be randomly distributed between the starting voltage V start and the termination voltage V stop . During the adjustment of the variable voltage, if any current data under the variable voltage exceeds the current threshold range, step S30 is executed. The current threshold can be obtained through multiple experiments, and the present invention does not limit the specific value of the current threshold. It should be noted that the variable voltage includes multiple voltage values, and at different times, the voltage values of the variable voltage are different. The variable voltage is the independent variable, and the current data is the dependent variable. Therefore, multiple current data can be obtained under the variable voltage. Among them, the current threshold also changes, and each voltage value of the variable voltage corresponds to a different current threshold. In another embodiment of the present invention, the voltage values of the variable voltage show an increasing trend. AsFigure 7 As shown, when the variable voltage is V 1 , the corresponding current data is i 1 . When the variable voltage is V 2 , the corresponding current data is i 2 . The allowable error range of the test is, for example, 5%, which is not limited in the present invention.

[0050] Please refer to Figure 1 , Figure 3 , Figure 5 , Figure 8 and Figure 9 As shown, in an embodiment of the present invention, in step S12, if any current data is less than or equal to the current threshold, step S20 is executed. In step S21, a variable current is applied to the test piece 300, and the voltage data of the test piece 300 is monitored in real time. Before applying the variable current, the test piece 300 can be reset, and then step S21 is executed. In step S21, the variable current is the independent variable, and the voltmeter 106 is the dependent variable. Among them, the current value of the variable current increases. If the voltage value corresponding to each current value is within the threshold range, the test piece 300 passes the test. If any voltage value exceeds the threshold range, the test piece 300 fails the test, and step S30 is executed. During the process of increasing the variable current, each current value corresponds to a voltage range. As Figure 8 shown, the values of the variable current are i 1 , i 2 and i 3 , where i 1 < i 2 < i 3 . When the current value of the variable current is i 1 , the voltage threshold range is U 11 to U 12 , where U 12 > U 11 . When the current value of the variable current is i 2 , the voltage threshold range is U 21 to U 22 , where U 22 > U 21 . When the current value of the variable current is i 3 , the voltage threshold range is U 31 to U 32 , where U 32 > U 31 . In this embodiment, as the current value of the variable current increases, the size of the voltage threshold range decreases. The voltage threshold range can be a numerical interval or a numerical value. As Figure 9 shown, when the current value of the variable current is i 1 , the voltage threshold range is V1 When the current value of the variable current is i 2 , the voltage threshold range is V 2 When the current value of the variable current is i 3 , the voltage threshold range is V 3 . When comparing the measured voltage value with the voltage threshold range, an error tolerance range is set. In this embodiment, the error tolerance range is, for example, 5%, and the present invention does not limit this.

[0051] Please refer to Figure 1 , Figure 3 and Figure 5 As shown, in an embodiment of the present invention, in steps S12 and S22, if any current data exceeds the threshold or any voltage data exceeds the threshold range, step S30 is executed. In step S30, the test is stopped, and the test element 100 is repaired. Among them, when the test is stopped, the test element 100 is not initialized, and the current test device settings are maintained to facilitate the tester to confirm the closed range switch 105 at this time. Among them, in step S10, the value of the applied variable voltage is changed, and the current data is tested through the ammeter 104. Then, the tested current data is compared with the current threshold. If the measured current data is less than or equal to the current threshold, the value of the applied variable voltage is continued to be changed. If the measured current data is greater than the current threshold, the test is directly stopped, and the closed condition of the current range switch 105 is retained. In step S20, the value of the applied variable current is changed, and the current data is tested through the voltmeter 106. Then, the tested voltage data is compared with the voltage threshold range. If the measured voltage data is within the voltage threshold range, the value of the applied variable current is continued to be changed. If the measured voltage data is outside the voltage threshold range, the test is directly stopped, and the closed condition of the current range switch 105 is maintained.

[0052] Please refer to Figures 1 to 9 As shown, in an embodiment of the present invention, the variable voltage and variable current provided by the test element 100 can be constants, or can be in the form of pulse change, linear change or logarithmic change. In this embodiment, a pulse variable voltage with an increasing trend is applied in step S10. In other embodiments of the present invention, multiple variable voltage values can also be set, and the preset variable voltage values are applied in a traversing manner to complete the test. In other embodiments of the present invention, the change form of the variable voltage can also be adjusted to linear change or logarithmic change, so that the variable voltage ranges from the starting voltage V start is measured to the termination voltage V stop . In step S20, the value of the variable current changes logarithmically.

[0053] The embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the content of this specification. These embodiments are selected and specifically described in this specification in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can well understand and utilize the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A semiconductor testing device, characterized in that: include: A test piece, on which a plurality of semiconductor devices are arranged, wherein the semiconductor devices include a test portion; A probe, the tip of which contacts the surface of the test piece and is electrically connected to the test part; as well as A test element, electrically connected to the needle tail of the probe, the test element applies a variable voltage or a variable current to the test piece; When the variable voltage is applied, the test element obtains the current data of the test piece until the current data exceeds the current threshold range or traverses the numerical range of the variable voltage. When the variable current is applied, the test element obtains the voltage data of the test piece until the voltage data exceeds the voltage threshold range or the voltage data exceeds the voltage threshold range.

2. A semiconductor testing device according to claim 1, characterized in that: The variable voltage and the variable current vary with time, and the variable voltage and the variable current vary in a logarithmic form, a linear form, a pulse form, or a constant order increasing form.

3. A semiconductor testing device according to claim 1, characterized in that: The test element includes a first power supply, which is electrically connected to the test piece and outputs the variable voltage to the test piece.

4. A semiconductor testing device according to claim 3, characterized in that: The test element includes a second power supply, which is electrically connected to the test piece and outputs the variable current to the test piece, wherein a first end of the second power supply is electrically connected to a first end of the first power supply, and a second end of the second power supply is electrically connected to a second end of the first power supply.

5. A semiconductor testing device according to claim 4, characterized in that: The semiconductor testing device comprises an analog-to-digital conversion module, which is electrically connected to the testing element and outputs the voltage data and the current data.

6. A semiconductor testing device according to claim 5, characterized in that: The test element includes a selection switch, one end of the selection switch is electrically connected to the first power supply or the second power supply, and the other end of the selection switch is electrically connected to the analog-to-digital conversion module.

7. A semiconductor testing device according to claim 6, characterized in that: The test element includes a plurality of range switches, one end of the range switch is electrically connected to the selection switch, and the other end is electrically connected to the analog-to-digital conversion module, wherein at most one of the plurality of range switches is closed at the same time.

8. A semiconductor testing device according to claim 7, characterized in that: The test element includes a plurality of test meters, and the test meters are used to test the voltage data or current data of the test piece, wherein the test meters have a plurality of ranges, and when different range switches are closed, the test meters switch the test ranges.

9. A semiconductor testing method, characterized in that: The following steps are involved: Providing a test piece, on which a plurality of semiconductor devices are arranged, wherein the semiconductor devices include a test portion; A positioning probe, wherein the tip of the probe contacts the surface of the test piece and is electrically connected to the test part, and the tail of the probe is electrically connected to the test element; Applying a variable voltage to the test piece through the test element, and acquiring current data of the test piece until the current data exceeds a current threshold range; If the value range of the variable voltage is traversed and the current data does not exceed the current threshold range, a variable current is applied to the test piece through the test element, and voltage data of the test piece is obtained until the voltage data exceeds the voltage threshold range; as well as If the current data exceeds the current threshold range or the voltage data exceeds the voltage threshold range, the test is stopped and the test element is repaired.

10. A semiconductor testing method according to claim 9, characterized in that: The test element includes a plurality of range switches, and the step of obtaining the current data or the voltage data includes: changing the closed range switch to adjust the value of the variable voltage or the variable current; and When the current data or the voltage data exceeds a threshold range, the range switch is kept closed, the test is stopped, and the test piece is repaired.

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