Surface treatment method for parts in plasma reaction cavity and plasma equipment

Abstract

The invention discloses a surface treatment method for parts in a plasma reaction cavity and plasma equipment. The plasma equipment comprises the reaction cavity, an air inlet communicated with the reaction cavity and the parts located in the reaction cavity. And a plasma radio frequency device. The method comprises the following steps: when plasma equipment is formally operated, predicting a predicted passivation layer thickness of a current part according to an initial thickness of a passivation layer of the part, a preset reference passivation layer thickness increased on the part by a single plasma process and operation times of the currently executed plasma process; wherein the reference passivation layer thickness is determined based on historical test data; and in response to the fact that the predicted thickness of the passivation layer reaches the first preset threshold value, passivation layer dissociation gas is introduced into the reaction cavity to implement passivation layer thinning operation, so that the thickness of the passivation layer is lower than the first preset threshold value. When the plasma process of the plasma equipment is formally operated, the passivation layer can be thinned under the condition that the reaction cavity is not opened, and manpower and material resources can be saved.

Description

Technical Field

[0001] The present disclosure relates to the field of plasma processing technologies, and particularly to a surface treatment method for internal components of a plasma reaction chamber and a plasma device. Background Art

[0002] Plasma devices, especially plasma processing devices including plasma thin film deposition devices, plasma etching devices or plasma ashing devices, are widely used in the field of wafer processing.

[0003] In related technologies, during the process of a plasma process in a plasma device, the plasma formed by the dissociation of the process gas introduced into the reaction chamber will deposit on the surface of the passivation layer in the chamber, thereby increasing the thickness of the passivation layer. When the increased thickness is relatively large, the relatively thick passivation layer is likely to flake off to form particulate matter. When the particulate matter flakes off onto the wafer surface, it will cause the processed chips to be scrapped. For example, a fluorinated passivation layer is provided on the surface of the reaction chamber wall and the internal components of the plasma device. However, during the plasma process, a fluorine-containing gas is used to perform plasma cleaning on the reaction chamber. During this process, the fluorine-containing gas will deposit on the surface of the components, resulting in the thickening of the fluorinated passivation layer as the usage time of the plasma device increases. When the accumulated fluorinated passivation layer is relatively thick, the fluorinated passivation layer on the surface of the components is likely to flake off to form particulate matter. When the particulate matter flakes off onto the wafer surface, it will cause the processed chips to be scrapped. At this time, it is often necessary to open the reaction chamber of the plasma device and replace the components. The replaced components will be polished and cleaned. Such a practice will cause the plasma device to lose productivity and consume a large amount of manpower and material resources. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present disclosure is to provide a surface treatment method for internal components of a plasma reaction chamber and a plasma device, which can reduce the thickness of the passivation layer without opening the reaction chamber when the plasma process of the plasma device is officially running, which is beneficial to saving manpower and material resources.

[0005] The present disclosure provides a surface treatment method for internal components of a plasma reaction chamber. The plasma device includes: a reaction chamber, an air inlet communicating with the reaction chamber, and components located in the reaction chamber; and a plasma radio frequency device. The method includes: when the plasma device is officially operating, predicting the predicted passivation layer thickness of the current component according to the initial thickness of the passivation layer of the component, the reference passivation layer thickness increased on the component by a preset single plasma process, and the number of times the current plasma process is executed; wherein the reference passivation layer thickness is determined based on historical test data; and in response to the predicted passivation layer thickness reaching a first preset threshold, introducing a passivation layer dissociation gas into the reaction chamber to perform a passivation layer thinning operation on the current component, so that the thickness of the passivation layer is lower than the first preset threshold.

[0006] According to some embodiments of the present disclosure, the determination of the reference passivation layer thickness includes the following steps: obtaining the pre-process passivation layer thickness of the component before multiple plasma processes, the post-process passivation layer thickness of the component after multiple plasma processes, and the number of test executions of the plasma process according to the historical test data; determining the reference passivation layer thickness increased on the component by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test executions; and / or The surface treatment method further includes: before the plasma device is officially operating, introducing a passivation layer gas into the reaction chamber to form a passivation layer on the surface of the component.

[0007] According to some embodiments of the present disclosure, the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold; or After the passivation layer is thinned to zero, a passivation layer gas is introduced into the air inlet to perform a passivation layer thickening operation on the current component, so that the current component is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold.

[0008] According to some embodiments of the present disclosure, directly thinning the passivation layer to a preset target thickness includes the following steps: determining the target thinning thickness of the component according to the predicted passivation layer thickness and the preset target thickness; predicting the predicted thinning duration of the component according to the target thinning thickness and the reference thinning rate of the passivation layer thinning operation on the passivation layer of the component, and introducing the passivation layer dissociation gas for the predicted thinning duration into the reaction chamber, the reference thinning rate is determined based on historical test data; or The passivation layer directly increases from zero to a preset target thickness, including the following steps: predicting the predicted thickening duration of the component based on the preset target thickness and the preset passivation layer thickening operation for the passivation layer of the component, and introducing the passivation layer gas for the predicted thickening duration into the reaction chamber, where the reference thickening rate is determined based on historical test data.

[0009] According to some embodiments of the present disclosure, the determination of the reference thinning rate includes the following steps: obtaining the pre-thinning passivation layer thickness of the component before the passivation layer thinning operation, the post-thinning passivation layer thickness of the component after the passivation layer thinning operation, and the test thinning duration of the passivation layer thinning operation from the historical test data; determining the reference thinning rate of the passivation layer thinning operation for the passivation layer of the component based on the ratio of the difference between the pre-thinning passivation layer thickness and the post-thinning passivation layer thickness to the test thinning duration; or The determination of the reference thickening rate includes the following steps: obtaining the pre-thickening passivation layer thickness of the component before the passivation layer thickening operation, the post-thickening passivation layer thickness of the component after the passivation layer thickening operation, and the test thickening duration of the passivation layer thickening operation from the historical test data; determining the reference thickening rate of the passivation layer thickening operation for the passivation layer of the component based on the ratio of the difference between the post-thickening passivation layer thickness and the pre-thickening passivation layer thickness to the test thickening duration.

[0010] According to some embodiments of the present disclosure, after the passivation layer is directly thinned to zero, passivation layer gas is introduced into the air inlet to perform a passivation layer thickening operation on the current component to renovate and thicken the passivation layer of the current component; the passivation layer thickening operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer gas introduction is constant, the other increases or decreases stepwise with the duration of the passivation layer gas introduction; or The passivation layer thinning operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer dissociation gas introduction is constant, the other increases or decreases stepwise with the duration of the passivation layer dissociation gas introduction.

[0011] According to some embodiments of the present disclosure, the component includes a liftable lifting platform; The surface treatment method for the internal components of the plasma reaction chamber further includes: driving the lifting platform to lift or lower, so that the distance between the lifting platform and the air inlet increases or decreases stepwise, and performing a pressure increase or decrease operation and / or a flow rate increase or decrease operation at each of the distances.

[0012] According to some embodiments of the present disclosure, the component includes a spraying component communicated with the air inlet and a liftable lifting platform located below the spraying component; The surface treatment method for the internal components of the plasma reaction chamber further includes: when the thickness of the passivation layer on the lifting platform is zero, transmitting a shielding member for shielding the upper surface of the lifting platform to the lifting platform, and continuing to introduce the passivation layer dissociation gas after shielding.

[0013] The present disclosure also provides a plasma device, including: a device main body including a reaction chamber, an air inlet communicated with the reaction chamber, and components located in the reaction chamber; a plasma radio frequency device provided in the device main body for forming a radio frequency electric field in the reaction chamber by radio frequency; a dissociation gas delivery unit having a dissociation gas delivery outlet communicated with the air inlet and capable of controlling the on / off of the dissociation gas output of the dissociation gas delivery outlet; a plasma gas delivery unit having a plasma gas delivery outlet communicated with the air inlet and capable of controlling the on / off of the plasma gas output of the plasma gas delivery outlet; and a control unit connected to the device main body, the plasma gas delivery unit, and the dissociation gas delivery unit for controlling the delivery conditions of the plasma gas delivery unit and the dissociation gas delivery unit according to the thickness of the passivation layer of the components, so as to perform the surface treatment method for the thickness of the passivation layer of the components as described above.

[0014] According to some embodiments of the present disclosure, it further includes: a passivation layer gas delivery unit having a passivation layer gas delivery outlet communicated with the air inlet, and the passivation layer gas delivery unit can control the on / off of the passivation layer gas output of the passivation layer gas delivery outlet; the control unit is connected to the passivation layer gas delivery unit for controlling the delivery conditions of the passivation layer gas delivery unit according to the thickness of the passivation layer of the components; and / or The components include a liftable lifting platform located below the air inlet; the plasma device further includes a lift driving assembly, and the control unit is connected to the lift driving assembly for controlling the lifting stroke of the lifting platform by controlling the driving conditions of the lift driving assembly; and / or The plasma device further includes an exhaust gas unit provided at the exhaust port of the device main body, and the control unit is connected to the exhaust gas unit for controlling the exhaust conditions of the exhaust gas unit; and / or The components include a spraying component communicated with the air inlet and a liftable lifting platform located below the spraying component; the device main body is provided with a transmission port communicated with the reaction chamber and a transmission door for opening / closing the transmission port; the plasma device further includes: a transmission assembly for transmitting a shielding member to the lifting platform when the transmission port is opened. The control unit is connected to the actuator of the transfer gate and the transfer component, and is configured to control the opening / closing of the transfer gate and the transfer of the transfer component.

[0015] Advantageous effects:

[0016] (1) For the surface treatment method of the internal components of a plasma reaction chamber and the plasma equipment of the present disclosure, when the plasma process of the plasma equipment is officially running, the passivation layer can be thinned without opening the reaction chamber, which is beneficial to saving manpower and material resources.

[0017] (2) For the surface treatment method of the internal components of a plasma reaction chamber and the plasma equipment of the present disclosure, when the plasma process of the plasma equipment is officially running, a passivation layer can be formed / thickened on the components without opening the reaction chamber, which is beneficial to saving manpower and material resources. Description of the drawings

[0018] Figure 1 is a schematic structural diagram of the plasma equipment according to an embodiment of the present disclosure.

[0019] Figure 2 is a schematic flow diagram of a surface treatment method for internal components of a plasma reaction chamber according to an embodiment of the present disclosure.

[0020] Figure 3 is a schematic flow diagram for determining the reference passivation layer thickness according to an embodiment of the present disclosure.

[0021] Figure 4 is a schematic flow diagram for directly thinning the passivation layer of the component to a preset target thickness according to an embodiment of the present disclosure.

[0022] Figure 5 is a schematic flow diagram for determining the reference thinning rate according to an embodiment of the present disclosure.

[0023] Figure 6 is a schematic flow diagram for determining the reference thickening rate according to an embodiment of the present disclosure.

[0024] Reference numerals: 11. Reaction chamber; 111. Gas inlet; 112. Exhaust port; 113. Lifting drive assembly; 12. Plasma radio frequency device; 13. Component; 131. Lifting platform; 132. Spraying component; 14. Dissociation gas delivery unit; 141. Dissociation gas delivery pipeline; 142. Dissociation control valve; 143. Dissociation gas flow detection component; 15. Plasma gas delivery unit; 151. Plasma gas delivery pipeline; 152. Plasma control valve; 16. Exhaust gas unit; 161. Discharge pipeline; 162. Discharge valve; 163. Pressure detector. 17. Passivation layer gas delivery unit; 171. Passivation layer gas delivery pipeline; 172. Passivation layer gas control valve; 173. Passivation layer gas flow detector. Detailed implementation manners

[0025] The following uses specific specific examples to illustrate the implementation manners of the present disclosure. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific implementation manners. Various details in the present disclosure can also be modified or changed according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0026] The following takes the attached drawings as a reference and details the embodiments of the present disclosure so that those skilled in the technical field to which the present disclosure belongs can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0027] In the description of the present disclosure, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0028] In addition, the terms "first" and "second" are only used for the purpose of indication and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0029] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0030] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" in which other elements are placed in between. Additionally, when it is said that a certain device "includes" a certain component, unless there is a particularly contrary record, it does not exclude other components, but means that other components may also be included.

[0031] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an", and "the" are intended to also include the plural forms unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence, or addition of one or a group of other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or meaning any one or any combination. Thus, "A, B, or C" or "A, B, and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A, B, and C". An exception to this definition only occurs when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0032] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statements do not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements, and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.

[0033] Although not defined differently, including the technical terms and scientific terms used herein, all terms have the same meaning as generally understood by those skilled in the technical field to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted as having a meaning consistent with the relevant technical literature and the currently presented information, and should not be over-interpreted as ideal or overly formulaic meanings as long as they are not defined.

[0034] In the related art, during the production process of a plasma device, the plasma formed by the dissociation of the process gas introduced into the reaction chamber will deposit on the surface of the passivation layer in the chamber, thereby increasing the thickness of the passivation layer. When the increased thickness is relatively large, the passivation layer with a relatively large thickness is likely to flake off to form particulate matter. When the particulate matter flakes off onto the wafer surface, the processed chips will be scrapped. For example, a fluorinated passivation layer, such as an aluminum fluoride passivation layer, is provided on the inner wall of the reaction chamber of the plasma device and the surfaces of the components inside it. During the plasma process, the reaction chamber is cleaned by plasma using a fluorine-containing gas. During this process, the fluorine-containing gas will deposit on the surface of the components, resulting in the thickening of the fluorinated passivation layer as the usage time of the plasma device increases. When the accumulated fluorinated passivation layer is relatively thick, the fluorinated passivation layer on the surface of the components is likely to flake off to form particulate matter, and when the particulate matter flakes off onto the wafer surface, the processed chips will be scrapped. At this time, it is often necessary to open the reaction chamber of the plasma device and replace the components. The replaced components will be polished and cleaned, which will cause the plasma device to lose productivity and consume a large amount of manpower and material resources.

[0035] In view of this, the present disclosure provides a surface treatment method for components inside a plasma reaction chamber and a plasma device, which can thin the passivation layer on the surface of the components without opening the reaction chamber when the plasma device is officially operating, and the operation is simple.

[0036] Figure 1 is a schematic structural diagram of a plasma device according to an embodiment of the present disclosure. Refer to Figure 1 , the plasma device of the present disclosure includes a reaction chamber 11, an air inlet 111 communicating with the reaction chamber 11, components 13 located in the reaction chamber 11, and a plasma radio frequency device 12. Among them, when the radio frequency electric field generated by the plasma radio frequency device 12 acts on the gas, the gas will dissociate into a plasma state.

[0037] Figure 2 is a schematic flowchart of a surface treatment method for components inside a plasma reaction chamber according to an embodiment of the present disclosure. Refer to Figure 1 and Figure 2 , a surface treatment method for components inside a plasma reaction chamber according to an embodiment of the present disclosure includes the following steps: Step S10: When the plasma device is running officially, predict the predicted passivation layer thickness of the component 13 based on the initial thickness of the passivation layer of the component 13, the reference passivation layer thickness increased on the component 13 by a single plasma process preset, and the number of times the current plasma process has been run. Among them, the reference passivation layer thickness is determined based on historical test data. For example, the passivation layer can be a fluorinated passivation layer, and the plasma process can be a plasma treatment process using a fluorine-containing gas. For example, it can be a plasma etching process, a cleaning process, or a surface modification process using a fluorine-containing gas, etc. Each time the plasma process is performed, the plasma formed by the dissociation of the fluorine-containing gas will be deposited on the fluorinated passivation layer, thereby increasing the thickness of the fluorinated passivation layer. However, it can be understood that the passivation layer described in the present disclosure includes but is not limited to this, and it can also be a passivation layer of other materials. During the official operation stage of the plasma device, based on the initial thickness of the passivation layer of the component 13, the number of times the plasma process has been run, and the reference passivation layer thickness increased on the component 13 by each plasma process, the predicted passivation layer thickness of the component 13 after multiple plasma processes are officially run can be determined. For example, predicted passivation layer thickness = number of runs * reference passivation layer thickness + initial thickness.

[0038] Optionally, the initial thickness of the passivation layer of the component 13 can be measured actually on the component 13 by opening the reaction chamber 11 before the plasma device runs officially, for example, during the test stage of the plasma device. The reference passivation layer thickness can be determined by applying multiple plasma processes to the plasma device during the test stage and obtaining the corresponding historical test data.

[0039] Figure 3 is a schematic flowchart of the determination of the reference passivation layer thickness in an embodiment of the present disclosure. Refer to Figure 1 and Figure 3 , the determination of the reference passivation layer thickness includes the following steps: Step S1a: Obtain the pre-process passivation layer thickness of the component 13 before multiple plasma processes are implemented, the post-process passivation layer thickness of the component 13 after multiple plasma processes are implemented, and the number of test implementations of the plasma process according to the historical test data. In other words, the historical test data includes: the pre-process passivation layer thickness of the component 13 measured actually by opening the reaction chamber 11 before multiple plasma processes are applied to the plasma device, the post-process passivation layer thickness of the component 13 measured actually by opening the reaction chamber 11 after multiple plasma processes are applied to the plasma device, and the number of test implementations of multiple plasma processes determined statistically.

[0040] Step S2a: Determine the reference passivation layer thickness increased on the component 13 by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test implementations, that is, reference passivation layer thickness = (post-process passivation layer thickness - pre-process passivation layer thickness) / number of test implementations.

[0041] Step S20: In response to the predicted passivation layer thickness reaching a first preset threshold, passivate the dissociation gas into the reaction chamber 11 to perform a passivation layer thinning operation on the current component 13, so that the thickness of the passivation layer is lower than the first preset threshold. In other words, after the passivation layer dissociation gas is introduced into the reaction chamber 11, it will be activated into plasma under the action of the radio frequency electric field of the plasma radio frequency device 12, and the high-energy ions in the plasma and the reduction and replacement action of free radicals are used to thin the fluorinated passivation layer on the surface of the component 13 to below the first preset threshold.

[0042] Thus, during the formal operation of the plasma equipment, without opening the reaction chamber 11, the passivation layer inside the reaction chamber 11 can be thinned, which is beneficial to saving manpower and material resources.

[0043] Optionally, the passivation layer dissociation gas includes a mixed gas of an inert gas and hydrogen, or a mixed gas of nitrogen and hydrogen. Among them, the volume flow ratio of the inert gas or nitrogen to hydrogen can be 100:1000 to 2000:100. For example, the passivation layer dissociation gas can be introduced into the reaction chamber 11 in such a way that the volume flow of the inert gas or nitrogen is 100 to 2000 sccm and the volume flow of hydrogen is 100 to 1000 sccm. Among them, the inert gas includes one or more of argon and helium. For the fluorinated passivation layer, the first preset threshold can be set to a value less than or equal to 200 um, more preferably less than or equal to 100 um, mainly because when the fluorinated passivation layer is greater than 200 um, the fluorinated passivation layer on the surface of the component 13 is likely to peel off, and the peeled particles falling on the wafer surface will cause the processed chips to be scrapped.

[0044] Based on the above surface treatment method of the internal components of the plasma reaction chamber, the present disclosure also provides a plasma device. Refer to Figure 1 , the plasma device includes a device main body, a plasma radio frequency device 12, a dissociation gas delivery unit 14, a plasma gas delivery unit 15, and a control unit.

[0045] Among them, the device main body includes a reaction chamber 11, an air inlet 111 communicated with the reaction chamber 11, and a component 13 located in the reaction chamber 11. The plasma radio frequency device 12 is provided in the device main body to form a radio frequency electric field in the reaction chamber 11.

[0046] The dissociation gas delivery unit 14 has a dissociation gas delivery outlet for communicating with the intake port 111, and the dissociation gas delivery unit 14 can be controlled to conduct / disconnect the output of the passivation layer dissociation gas at the dissociation gas delivery outlet. Optionally, the dissociation gas delivery unit 14 includes a dissociation gas delivery pipeline 141 and a dissociation control valve 142. The dissociation gas delivery pipeline 141 has the dissociation gas delivery outlet. The dissociation control valve 142 is provided on the dissociation gas delivery pipeline 141 and can be controlled to conduct and disconnect the output of the passivation layer dissociation gas at the dissociation gas delivery outlet.

[0047] The plasma gas delivery unit 15 has a plasma gas delivery outlet for communicating with the intake port 111, and the plasma gas delivery unit 15 can be controlled to conduct / disconnect the output of the plasma gas at the plasma gas delivery outlet. Optionally, the plasma gas delivery unit 15 includes a plasma gas delivery pipeline 151 and a plasma control valve 152. The plasma gas delivery pipeline 151 has the plasma gas delivery outlet. The plasma control valve 152 is provided on the plasma gas delivery pipeline 151 and can be controlled to conduct and disconnect the output of the plasma gas at the plasma gas delivery outlet.

[0048] The control unit is connected to the device main body, the plasma gas delivery unit 15 and the dissociation gas delivery unit 14, and is used to control the delivery conditions of the plasma gas delivery unit 15 and the dissociation gas delivery unit 14 according to the passivation layer thickness of the components 13 in the device main body, so as to perform the surface treatment method on the passivation layer thickness of the components 13 as described in the above embodiments. For example, the control unit is used to predict the predicted passivation layer thickness of the current component 13 according to the reference passivation layer thickness increased on the component 13 by a preset single plasma process and the number of times of the currently executed plasma process, and in response to the predicted passivation layer thickness reaching a first preset threshold, control the plasma gas delivery unit 15 to disconnect and the dissociation gas delivery unit 14 to open, so as to introduce the passivation layer dissociation gas into the reaction chamber 11 to perform the passivation layer thinning operation on the current component 13. Optionally, the control unit is connected to the dissociation control valve 142 and is used to control the disconnection / delivery of the passivation layer dissociation gas at the dissociation gas delivery outlet by controlling the disconnection / conductance of the dissociation control valve 142. The control unit is connected to the plasma control valve 152 and is used to control the disconnection / delivery of the plasma gas at the plasma gas delivery outlet by controlling the disconnection / conductance of the plasma control valve 152.

[0049] Thus, when the thickness of the passivation layer of the component 13 is greater than the first preset threshold, which may cause the passivation layer to peel off and affect the plasma process, the plasma gas delivery unit 15 disconnects and stops delivering plasma gas, and the dissociation gas delivery unit 14 opens and starts delivering passivation layer dissociation gas into the reaction chamber 11, so as to thin the passivation layer on the component 13 without opening the reaction chamber 11, which is beneficial to saving a large amount of manpower and material resources.

[0050] Optionally, the air inlet 111 is directly above the center of the component 13. The passivation layer thinning operation further includes that, with the flow rate of the passivation layer dissociation gas being constant, the pressure in the reaction chamber 11 increases / decreases stepwise with the passing time. More specifically, under each pressure gradient, the pressure condition is maintained for the same duration. And the stepwise increase / decrease is an equally spaced successive increase / decrease, and each stepwise increase / decrease operation constitutes a pressure cycle step, and the passivation layer thinning operation has multiple pressure cycle steps. For example, under each pressure cycle step, the pressure increases successively in the directions of 100 mT, 300 mT, 500 mT, 700 mT, 900 mT and 1100 mT, and is maintained for 30 s at each pressure, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the pressure in the reaction chamber 11 changes, it can promote the flow of the passivation layer dissociation gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and further the passivation layer in different regions of the surface of the component 13 from the center to the edge can be evenly thinned, improving the thinning uniformity.

[0051] Optionally, the device body is further provided with an exhaust port 112 communicating with the reaction chamber 11, and the plasma device further includes an exhaust gas unit 16. The exhaust gas unit 16 is arranged at the exhaust port 112, and the control unit is connected to the exhaust gas unit 16 for controlling the exhaust condition of the exhaust gas unit 16 so as to implement the pressure condition in the reaction chamber 11 as described above. For example, the exhaust gas unit 16 includes an exhaust pipeline 161, an exhaust valve 162 and a pressure detector 163. The exhaust pipeline 161 communicates with the exhaust port 112 and is used for exhausting gas to relieve pressure. The exhaust valve 162 is arranged at the exhaust port 112. The pressure detector 163, such as a pressure gauge, is arranged on the exhaust pipeline 161 and is used for detecting the pressure of the exhaust pipeline 161 to determine the pressure in the reaction chamber 11. The control unit is connected to the exhaust valve 162 and the pressure detector 163 and is used for controlling the opening degree of the exhaust valve 162 according to the pressure detection result of the pressure detector 163 so as to control the pressure in the reaction chamber 11. For example, when the detection result of the pressure detector 163 is relatively large, the opening degree of the exhaust valve 162 is controlled to become larger, thereby correspondingly reducing the pressure in the reaction chamber 11. When the detection result of the pressure detector 163 is relatively small, the opening degree of the exhaust valve 162 is controlled to become smaller, thereby correspondingly increasing the pressure in the reaction chamber 11.

[0052] Optionally, the intake port 111 is directly above the center of the component 13. The passivation layer thinning operation further includes that, under the condition that the pressure in the reaction chamber 11 remains unchanged, the flow rate of the passivation layer dissociation gas introduced increases / decreases stepwise with the introduction duration. More specifically, under each flow rate gradient, the flow rate condition is maintained for the same duration. And the stepwise increase / decrease is an equidistant successive increase / decrease, and each stepwise increase / decrease operation constitutes a flow rate cycle step, and the passivation layer thinning operation has a plurality of flow rate cycle steps. When the flow rate in the reaction chamber 11 changes, it can promote the flow of the passivation layer dissociation gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 is evenly distributed from the center to the edge, and further the passivation layer in different regions of the surface of the component 13 from the center to the edge can be evenly thinned, improving the thinning uniformity.

[0053] Optionally, the dissociation gas delivery unit 14 further includes a dissociation gas flow detector 143, such as a first flowmeter, and the dissociation gas flow detector 143 is provided on the dissociation gas delivery pipeline 141. The control unit is connected to the dissociation control valve 142 and the dissociation gas flow detector 143, and is configured to control the opening degree of the dissociation control valve 142 according to the flow detection result of the dissociation gas flow detector 143, so as to control the flow rate of the passivation layer dissociation gas introduced. For example, when the detection result of the dissociation gas flow detector 143 is large, the opening degree of the dissociation control valve 142 is controlled to become smaller, thereby correspondingly reducing the flow rate of the passivation layer dissociation gas introduced. When the detection result of the dissociation gas flow detector 143 is small, the opening degree of the dissociation control valve 142 is controlled to become larger, thereby correspondingly increasing the flow rate of the passivation layer dissociation gas introduced.

[0054] Optionally, the component 13 includes a lift platform 131 that is located below the air inlet 111 and can be lifted. The passivation layer thinning operation further includes driving the lift platform 131 to lift, so that the distance between the lift platform 131 and the air inlet 111 increases / decreases step by step, and the aforementioned pressure increase / decrease operation and / or flow rate increase / decrease operation are performed at each such distance. More specifically, at each such distance gradient, the distance condition is maintained for the same duration. And the step-by-step increase / decrease is an equal-distance sequential increase / decrease, and each step-by-step increase / decrease operation constitutes a distance cycle step, and the passivation layer thinning operation has multiple distance cycle steps. For example, in each such distance cycle step, the distance increases sequentially in the direction of 15 mm, 20 mm, 25 mm to 30 mm, and is maintained for 30 s at each distance, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. Exemplarily, the lift platform 131 can be a temperature-controlled platform for supporting the wafer and controlling the temperature of the wafer during processing, such as a heating platform, and the heating platform can be moved in the up and down direction under the drive of the lift drive assembly 113 to perform lifting. The reason for the above setting is that when the lift platform 131 in the reaction chamber 11 is lifted or lowered, it can promote the flow of the gas in the reaction chamber 11, and is also beneficial to improving the thinning uniformity of the lift platform 131.

[0055] Optionally, the device body further includes a lifting drive assembly 113. The lifting drive assembly 113 is connected to the lifting platform 131 and is used to control the lifting of the lifting platform 131. The control unit is connected to the lifting drive assembly 113 and is used to change the distance between the lifting platform 131 and the air inlet 111 by controlling the lifting stroke of the lifting drive assembly 113 as described in the above embodiments. Exemplarily, the lifting drive assembly 113 includes a motor and a lead screw component. The motor is connected to the lead screw component, and the lead screw component is connected to the lifting platform 131 and is used to drive the lifting platform 131 to lift under the drive of the motor. The control unit is connected to the motor and is used to control the lifting stroke by controlling the number of rotation turns of the motor.

[0056] Optionally, in some examples, the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold. Thus, when the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold, the passivation layer of the component 13 after thinning can still play a role, and the original passivation layer on the component 13 can be reused, which is beneficial to saving materials.

[0057] Figure 4 It is a schematic flow chart of directly thinning the passivation layer of the component in the embodiment of the present disclosure. Refer to Figure 4 , directly thinning the passivation layer to a preset target thickness includes the following steps: Step S21: Determine the target thinning thickness of the component 13 according to the predicted passivation layer thickness and the preset target thickness. For example, the target thinning thickness = (predicted passivation layer thickness - preset target thickness).

[0058] Step S22: Predict the predicted thinning duration of the passivation layer of the component 13 according to the target thinning thickness and the reference thinning rate of the passivation layer thinning operation preset for the component 13. The reference thinning rate is determined based on historical test data. For example, the predicted thinning duration = target thinning thickness / reference thinning rate, and a passivation layer dissociation gas for the predicted thinning duration is introduced into the reaction chamber 11.

[0059] Thus, the present disclosure can control the thinning thickness of the passivation layer by controlling the predicted thinning duration, that is, the introduction duration of the passivation layer dissociation gas, so that the passivation layer after thinning can reach the preset target thickness.

[0060] Optionally, the control unit is connected to the dissociation gas delivery unit 14 and is configured to determine a target thinning thickness of the component 13 according to the predicted passivation layer thickness and a preset target thickness, and predict a predicted thinning duration of the component 13 according to the target thinning thickness and a preset passivation layer thinning operation for the passivation layer of the component 13, and control a delivery duration of the dissociation gas delivery unit 14 according to the predicted thinning duration, so that the passivation layer can reach the target thickness after thinning. For example, the control unit is connected to the dissociation control valve 142 and is configured to control an opening duration of the dissociation control valve 142 according to the predicted thinning duration, so that the passivation layer can reach the target thickness after thinning.

[0061] Optionally, the reference thinning rate can be determined by applying the passivation layer thinning operation to the plasma device during a test phase of the plasma device and obtaining corresponding historical test data.

[0062] Figure 5 is a schematic flow chart of determining the reference thinning rate according to an embodiment of the present disclosure. Refer to Figure 5 , the determination of the reference thinning rate includes the following steps: Step S1b: Obtain a pre-thinning passivation layer thickness of the component 13 before the passivation layer thinning operation, a post-thinning passivation layer thickness of the component 13 after the passivation layer thinning operation, and a test thinning duration of the passivation layer thinning operation according to the historical test data. In other words, the historical test data includes: the pre-thinning passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 before applying the passivation layer thinning operation to the plasma device, the post-thinning passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 after applying the passivation layer thinning operation to the plasma device, and the test thinning duration (the passivation layer dissociation gas introduction duration) of the passivation layer thinning operation determined by statistical timing.

[0063] Step S2b: Determine a reference thinning rate of the passivation layer thinning operation for the passivation layer of the component 13 according to a ratio of a difference between the pre-thinning passivation layer thickness and the post-thinning passivation layer thickness to the test thinning duration. For example, the reference thinning rate = (pre-thinning passivation layer thickness - post-thinning passivation layer thickness) / test thinning duration.

[0064] Optionally, when it is necessary to thin the passivation layer to zero, according to the above reference thinning rate, the predicted thinning duration = predicted passivation layer thickness / reference thinning rate. Therefore, the present disclosure only needs to ensure that the predicted thinning duration is greater than or equal to the predicted passivation layer thickness / reference thinning rate to ensure that the passivation layer can be thinned to zero. The control unit is connected to the dissociation gas delivery unit 14 and is configured to make the thickness of the passivation layer after thinning zero by controlling the delivery duration of the dissociation gas delivery unit 14 to be greater than or equal to the predicted passivation layer thickness / reference thinning rate. For example, the control unit is connected to the dissociation control valve 142 and is configured to make the thickness of the passivation layer after thinning zero by controlling the opening duration of the dissociation control valve 142 to be greater than or equal to the predicted passivation layer thickness / reference thinning rate.

[0065] Optionally, referring to Figure 1 , the component 13 includes a spraying component 132 communicating with the air inlet 111 and a lifting platform 131 located below the spraying component 132 and capable of lifting. Exemplarily, the spraying component 132 includes a plurality of spray heads, and the plurality of spray heads are arranged at intervals in the transverse direction. The surface treatment method of the internal component of the plasma reaction chamber further includes: when the thickness of the passivation layer on the lifting platform 131 is zero, transmitting a shielding member for shielding the upper surface of the lifting platform 131 to the lifting platform 131 and continuing to introduce the passivation layer dissociation gas after shielding. Optionally, the plasma device is provided with a transmission port communicating with the reaction chamber 11, and a transmission door for opening / closing the transmission port is provided at the transmission port, and the transmission port can be used to transmit a wafer / a shielding member to the lifting platform 131 of the reaction chamber 11.

[0066] Optionally, the device main body is provided with a transmission port communicating with the reaction chamber 11 and a transmission door for opening / closing the transmission port. The plasma device further includes a transmission component, such as a manipulator. The transmission component is configured to transmit the shielding member above the lifting platform 131 when the transmission port is opened. For example, the control unit is connected to the actuator of the transmission door and the transmission component and is configured to control the opening / closing condition of the transmission door and the transmission condition of the transmission component to implement the above-described situation of transmitting the shielding member. For example, the control unit is configured to control the transmission door to open according to the delivery duration of the dissociation gas delivery unit 14 being greater than the predicted passivation layer thickness / reference thinning rate, and control the transmission component to transmit the shielding member through the opened transmission port above the lifting platform 131 and shield the lifting platform 131.

[0067] It can be understood that during the process of introducing the passivation layer dissociation gas into the reaction chamber 11, since the passivation layer dissociation gas is ejected directly towards the lifting platform 131 after being ejected from the spraying component 132, and during the process of removing the passivation layer material on the surface of the lifting platform 131 to zero, the materials (AlF x and Al) on the surface of the lifting platform 131 will be sputtered onto the spraying component 132 due to the bombardment effect. Therefore, after the thickness of the passivation layer on the lifting platform 131 becomes zero, a shielding member can be transmitted into the reaction chamber 11 to shield the upper surface of the lifting platform 131, and the passivation layer dissociation gas can continue to be introduced, so that the fluorinated passivation layer material sputtered onto the spraying component 132 can finally be dissociated completely, and the lifting platform 131 will not be overly thinned.

[0068] Optionally, the shielding member is made of a corrosion-resistant material, such as a ceramic plate (Al 2 O 3 , AlN ceramic plate). Thus, the shielding member is difficult to be dissociated by the passivation layer dissociation gas, and has a good shielding and protection effect on the lifting platform 131.

[0069] In some other examples, after the passivation layer is thinned to zero, a passivation layer gas is introduced into the air inlet 111 to perform an operation of thickening the passivation layer of the current component 13, so that the current component 13 is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold. Optionally, the passivation layer gas includes NF 3 and other fluorine-containing gases, and the volume flow rate of the fluorine-containing gas can be 200 sccm. After the passivation layer gas is introduced into the reaction chamber 11, it will be activated into plasma under the action of the radio frequency electric field of the plasma radio frequency device 12, and the plasma is used to deposit on the passivation layer surface of the component 13, so that the passivation layer of the component 13 can be thickened without opening the reaction chamber 11.

[0070] Thus, a new passivation layer is formed on the surface of the component 13, and the passivation layer material formed by refurbishment ages slowly, and has better stability and reliability.

[0071] At the same time, it is worth mentioning that for the passivation layer of the component 13 of the present disclosure, the plasma device can have a passivation layer on the surface of the component 13 in the initial state after assembly, or there may be no passivation layer formed on the surface of the component 13 in the initial state after assembly. Therefore, before the plasma device operates without opening the reaction chamber 11, a passivation layer can also be formed on the surface of the component by introducing the passivation layer gas into the reaction chamber 11, and then the plasma process can be carried out using the plasma device.

[0072] Optionally, the plasma device further includes a passivation layer gas delivery unit 17. The passivation layer gas delivery unit 17 has a passivation layer gas delivery outlet communicating with the air inlet 111, and the passivation layer gas delivery unit 17 can be controlled to conduct / disconnect the passivation layer gas output of the passivation layer gas delivery outlet. The control unit is connected to the passivation layer gas delivery unit 17 and is configured to control the delivery of the passivation layer gas delivery unit 17 according to the passivation layer thickness of the components 13 in the device body. For example, the control unit is configured to control the dissociation gas delivery unit 14 to disconnect and the passivation layer gas delivery unit 17 to open according to the delivery duration of the dissociation gas delivery unit 14 being greater than or equal to the predicted passivation layer thickness / reference thinning rate, so as to introduce the passivation layer gas into the air inlet 111 to perform the passivation layer thickening operation on the current component 13.

[0073] Optionally, the passivation layer gas delivery unit 17 includes a passivation layer gas delivery pipeline 171 and a passivation layer gas control valve 172. The passivation layer gas delivery pipeline 171 has the passivation layer gas delivery outlet. The passivation layer gas control valve 172 is arranged on the passivation layer gas delivery pipeline 171 and can be controlled to conduct and disconnect the passivation layer gas output of the passivation layer gas delivery outlet. The control unit is connected to the dissociation control valve 142 and the passivation layer gas control valve 172, and is configured to control the dissociation control valve 142 to disconnect and the passivation layer gas control valve 172 to open according to the opening duration of the dissociation control valve 142 being greater than or equal to the predicted passivation layer thickness / reference thinning rate, so as to introduce the passivation layer gas into the air inlet 111 to perform the passivation layer thickening operation on the current component 13.

[0074] Optionally, after the passivation layer is thinned to zero, the passivation layer directly thickens from zero to a preset target thickness, including the following steps: predicting the predicted thickening duration of the component 13 according to the preset target thickness and the reference thickening rate of the passivation layer thickening operation of the passivation layer of the component 13, and introducing the passivation layer gas for the predicted thickening duration into the reaction chamber 11, where the reference thickening rate is determined based on historical test data.

[0075] Thus, the present disclosure can control the thickness of the thickened passivation layer by controlling the predicted thickening duration, i.e., the introduction duration of the passivation layer gas, so that the passivation layer can reach the target thickness after thickening from zero.

[0076] Optionally, the control unit is connected to the passivation layer gas delivery unit 17, and is configured to predict the predicted thickening duration of the component 13 based on the preset target thickness and the preset passivation layer thickening operation for the passivation layer of the component 13. For example, the predicted thickening duration = the preset target thickness / the reference thickening rate, and control the delivery duration of the passivation layer gas delivery unit 17 according to the predicted thickening duration. For example, the control unit controls the opening duration of the passivation layer gas control valve 172 according to the predicted thickening duration, so that the passivation layer after thickening can reach the target thickness.

[0077] Optionally, the reference thickening rate can be determined by applying the passivation layer thickening operation to the plasma device during the test phase of the plasma device and obtaining the corresponding historical test data.

[0078] Figure 6 It is a schematic flow chart for determining the reference thickening rate of the embodiment of the present disclosure. Refer to Figure 6 The determination of the reference thickening rate includes the following steps: Step S1c: Obtain the pre-thickening passivation layer thickness of the component 13 before the passivation layer thickening operation, the post-thickening passivation layer thickness of the component 13 after the passivation layer thickening operation, and the test thickening duration of the passivation layer thickening operation according to the historical test data. In other words, the historical test data includes: the pre-thickening passivation layer thickness of the component 13 determined by actually measuring through opening the reaction chamber 11 before applying the passivation layer thickening operation to the plasma device, the post-thickening passivation layer thickness of the component 13 determined by actually measuring through opening the reaction chamber 11 after applying the passivation layer thickening operation to the plasma device, and the test thickening duration (the passivation layer gas introduction duration) of the passivation layer thickening operation determined by statistical timing.

[0079] Step S2c: Determine the reference thickening rate of the passivation layer thickening operation for the passivation layer of the component 13 according to the ratio of the difference between the pre-thickening passivation layer thickness and the post-thickening passivation layer thickness to the test thickening duration. For example, the reference thickening rate = (post-thickening passivation layer thickness - pre-thickening passivation layer thickness) / test thickening duration.

[0080] Optionally, the air inlet 111 is located directly above the center of the component 13. The passivation layer thickening operation further includes that, with the flow rate of the passivation layer gas remaining unchanged, the pressure in the reaction chamber 11 increases or decreases stepwise with the passing time. More specifically, at each pressure gradient, the pressure condition is maintained for the same duration. And the stepwise increase or decrease is an equally spaced successive increase or decrease, and each stepwise increase or decrease operation constitutes a pressure cycle step, and the passivation layer thickening operation has multiple pressure cycle steps. For example, at each pressure cycle step, the pressure increases successively in the direction of 1000 mT, 1200 mT, 1400 mT, 1600 mT, 1800 mT, 2000 mT, and is maintained for 30 s at each pressure, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the pressure in the reaction chamber 11 changes, it can promote the flow of the gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and further the passivation layer in different regions of the surface of the component 13 from the center to the edge can be thickened evenly, improving the thickening uniformity. At the same time, it can be understood that when the passivation layer gas is introduced, the pressure condition in the reaction chamber 11 can also be achieved by controlling the exhaust condition of the exhaust gas unit 16 by the control unit.

[0081] Optionally, the air inlet 111 is located directly above the center of the component 13. The passivation layer thickening operation further includes that, with the inlet pressure of the passivation layer gas remaining unchanged, the flow rate of the passivation layer gas increases or decreases stepwise with the passing time. More specifically, at each flow rate gradient, the flow rate condition is maintained for the same duration. And the stepwise increase or decrease is an equally spaced successive increase or decrease, and each stepwise increase or decrease operation constitutes a flow rate cycle step, and the passivation layer thickening operation has multiple flow rate cycle steps. For example, at each flow rate cycle step, the flow rate increases successively in the direction of 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, and is maintained for 30 s at each flow rate, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the flow rate of the passivation layer gas changes, it can promote the flow of the passivation layer gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and further the passivation layer in different regions of the surface of the component 13 from the center to the edge can be thickened evenly.

[0082] Optionally, refer toFigure 1 The passivation layer gas delivery unit 17 further includes a passivation layer gas flow rate detector 173, such as a second flowmeter, and the passivation layer gas flow rate detector 173 is disposed on the passivation layer gas delivery pipeline 171. The control unit is connected to the passivation layer gas control valve 172 and the passivation layer gas flow rate detector 173, and is configured to control the opening degree of the passivation layer gas control valve 172 according to the flow rate detection result of the passivation layer gas flow rate detector 173, so as to control the flow rate of the passivation layer gas introduced. For example, when the detection result of the passivation layer gas flow rate detector 173 is large, the opening degree of the passivation layer gas control valve 172 is controlled to become smaller, so as to correspondingly reduce the flow rate of the passivation layer gas introduced. When the detection result of the passivation layer gas flow rate detector 173 is small, the opening degree of the passivation layer gas control valve 172 is controlled to become larger, so as to correspondingly increase the flow rate of the passivation layer gas introduced.

[0083] Optionally, the component 13 includes a lift platform 131 that is located below the air inlet 111 and can be lifted. The passivation layer thickening operation further includes driving the lift platform 131 to lift, so that the distance between the lift platform 131 and the air inlet 111 increases / decreases step by step, and the aforementioned pressure increase / decrease operation and / or flow rate increase / decrease operation is performed at each of the distances. More specifically, at each of the distance gradients, the distance condition is maintained for the same duration. And the step-by-step increase / decrease is an equal-distance sequential increase / decrease, and each step-by-step increase / decrease operation constitutes a distance cycle step, and the passivation layer thickening operation has a plurality of distance cycle steps. For example, in each of the distance cycle steps, the distance increases sequentially in the direction of 15 mm, 20 mm, 25 mm to 30 mm, and is maintained for 30 s at each distance, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. When the lift platform 131 in the reaction chamber 11 lifts, it can promote the flow of the gas in the reaction chamber 11, and is also beneficial to improving the thickening uniformity of the lift platform 131. At the same time, it can be understood that when the lift platform 131 lifts, the distance condition between the lift platform 131 and the air inlet 111 can also be realized by the control unit controlling the lifting stroke of the lift driving assembly 113.

[0084] The above embodiments are only illustrative of the principles and effects of the present disclosure, and are not used to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A surface treatment method for components in a plasma reaction chamber, characterized in that: The plasma equipment comprises: a reaction chamber, an air inlet connected to the reaction chamber and parts located in the reaction chamber; and a plasma radio frequency device; comprising: When the plasma equipment is officially in operation, predicting the predicted passivation layer thickness of the current component according to the initial thickness of the passivation layer of the component, the reference passivation layer thickness added to the component by a preset single plasma process, and the number of plasma process operations currently being performed; wherein the reference passivation layer thickness is determined based on historical test data; and In response to the predicted passivation layer thickness reaching a first preset threshold, a passivation layer dissociation gas is introduced into the reaction chamber to perform a passivation layer thinning operation on the current component, so that the thickness of the passivation layer is lower than the first preset threshold.

2. The surface treatment method of a component in a plasma reaction chamber according to claim 1, characterized in that: Determination of the reference passivation layer thickness comprises the following steps: obtaining the pre-process passivation layer thickness of the component before multiple plasma processes are performed, the post-process passivation layer thickness of the component after multiple plasma processes are performed, and the number of test implementations of the plasma process according to the historical test data; determining the reference passivation layer thickness added to the component by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test implementations; and / or The surface treatment method further comprises: before the plasma equipment is formally operated, a passivation layer is formed on the surface of the component by introducing a passivation layer gas into the reaction chamber.

3. The surface treatment method of a component in a plasma reaction chamber according to claim 1, characterized in that: The passivation layer is directly thinned to any non-zero thickness value below the first preset threshold; or After the passivation layer is thinned to zero, the passivation layer gas is introduced into the air inlet to implement a passivation layer thickening operation on the current component, so that the current component is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold.

4. The surface treatment method of a component in a plasma reaction chamber according to claim 3, characterized in that: The passivation layer is directly thinned to a preset target thickness, comprising the following steps: determining a target thinning thickness of the component according to the predicted passivation layer thickness and the preset target thickness; predicting a predicted thinning time of the component according to the target thinning thickness and a preset reference thinning rate of the passivation layer thinning operation for the passivation layer of the component, and introducing a passivation layer dissociation gas of the predicted thinning time into the reaction chamber, wherein the reference thinning rate is determined based on historical test data; or The passivation layer is directly thickened from zero to a preset target thickness, comprising the following steps: predicting a predicted thickening time of the component based on a reference thickening rate of the passivation layer of the component according to the preset target thickness and a preset thickening operation of the passivation layer, and introducing a passivation layer gas with the predicted thickening time into the reaction chamber, wherein the reference thickening rate is determined based on historical test data.

5. The surface treatment method of a component in a plasma reaction chamber according to claim 4, characterized in that: Determination of the reference thinning rate comprises the following steps: obtaining the thickness of the passivation layer before thinning of the component before the passivation layer thinning operation, the thickness of the passivation layer after thinning of the component after the passivation layer thinning operation and the test thinning time of the passivation layer thinning operation according to the historical test data; determining the reference thinning rate of the passivation layer of the component by the passivation layer thinning operation according to the ratio of the difference between the thickness of the passivation layer before thinning and the thickness of the passivation layer after thinning to the test thinning time; or Determination of the reference thickening rate includes the following steps: obtaining the passivation layer thickness of the component before the passivation layer thickening operation, the passivation layer thickness of the component after the passivation layer thickening operation, and the test thickening time of the passivation layer thickening operation according to the historical test data; determining the reference thickening rate of the passivation layer of the component by the passivation layer thickening operation according to the ratio of the difference between the passivation layer thickness after thickening and the passivation layer thickness before thickening to the test thickening time.

6. The surface treatment method of a component in a plasma reaction chamber according to claim 1, characterized in that: After the passivation layer is directly thinned to zero, the passivation layer gas is introduced into the air inlet to implement a thickening operation on the passivation layer of the current component, so as to thicken and renovate the passivation layer of the current component; The passivation layer thickening operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer gas is kept constant, the other one is increased / decreased in a step-by-step manner according to the length of time the passivation layer gas is introduced; or The passivation layer thinning operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer dissociation gas remains unchanged, the other one increases / decreases in a step-by-step manner according to the length of time the passivation layer dissociation gas is introduced.

7. The surface treatment method of a component in a plasma reaction chamber according to claim 6, characterized in that: The components include a liftable lifting platform; The surface treatment method of components in the plasma reaction chamber further includes: driving the lifting platform to rise and fall so that the distance between the lifting platform and the air inlet increases / decreases in steps, and performing pressure increase / decrease operation and / or flow increase / decrease operation at each of the distances.

8. The surface treatment method of a component in a plasma reaction chamber according to claim 1, characterized in that: The components include a spray component connected to the air inlet and a lifting platform located below the spray component and capable of being raised and lowered; The surface treatment method of components in the plasma reaction chamber also includes: according to the thickness of the passivation layer of the lifting platform being zero, transmitting a shielding member for shielding the upper surface of the lifting platform to the lifting platform, and continuing to introduce the passivation layer dissociation gas after shielding.

9. A plasma device, characterized in that: include: The device body includes a reaction chamber, an air inlet connected to the reaction chamber, and components located in the reaction chamber; A plasma radio frequency device, arranged in the equipment body, for providing radio frequency to the reaction chamber to form a radio frequency electric field; A dissociation gas delivery unit, having a dissociation gas delivery outlet for communicating with the gas inlet, and capable of controllably turning on / off the dissociation gas output of the dissociation gas delivery outlet; A plasma gas delivery unit having a plasma gas delivery outlet connected to the gas inlet, and capable of controllably turning on / off the plasma gas output of the plasma gas delivery outlet; as well as A control unit is connected to the equipment body, the plasma gas delivery unit and the dissociation gas delivery unit, and is used to control the delivery conditions of the plasma gas delivery unit and the dissociation gas delivery unit according to the thickness of the passivation layer of the component, so as to perform the surface treatment method as described in any one of claims 1 to 8 on the thickness of the passivation layer of the component.

10. The plasma device according to claim 9, characterized in that Also includes: A passivation layer gas delivery unit having a passivation layer gas delivery outlet connected to the gas inlet, and the passivation layer gas delivery unit can be controlled to turn on / off the passivation layer gas output of the passivation layer gas delivery outlet; the control unit is connected to the passivation layer gas delivery unit, and is used to control the delivery condition of the passivation layer gas delivery unit according to the passivation layer thickness of the component; and / or The component comprises a liftable lifting platform located below the air inlet; the plasma device further comprises a lift drive assembly, the control unit is connected to the lift drive assembly, and is used to control the lift stroke of the lift platform by controlling the driving condition of the lift drive assembly; and / or The plasma device further comprises a gas exhaust unit, which is arranged at the exhaust port of the device body, and the control unit is connected to the gas exhaust unit to control the exhaust condition of the gas exhaust unit; and / or The components include a spray component connected to the air inlet and a lifting platform located below the spray component and capable of being raised and lowered; The equipment body is provided with a transmission port communicating with the reaction chamber and a transmission door for opening / closing the transmission port; The plasma equipment further comprises: a transmission component for transmitting the shielding member to the lifting platform when the transmission port is opened; The control unit is connected to the actuator of the transmission door and the transmission component, and is used to control the opening / closing condition of the transmission door and the transmission condition of the transmission component.

Images