Full-band ultrahigh-power-density electromagnetic pulse protection energy selection surface and communication equipment

Abstract

The invention discloses a full-band ultra-high power density electromagnetic pulse protection energy selection surface and communication equipment, the energy selection surface comprises a first dielectric substrate and a second dielectric substrate which are stacked in sequence, and the first dielectric substrate and the second dielectric substrate are separated through an air gap layer; a first metal unit is arranged at the top of the first dielectric substrate, a second metal unit is arranged at the bottom of the second dielectric substrate, and the first metal unit and the second metal unit are of central symmetry structures. According to the invention, function adjustability is realized, switching between a transmission state and a shielding state can be realized, and limitation of single function of the frequency selective surface and limitation of narrow bandwidth of other energy selective surfaces are broken through.

Description

Technical Field

[0001] The present invention relates to an electromagnetic pulse protection energy selective surface with ultra-high power density in the full frequency band and a communication device, belonging to the technical fields of wireless communication and metasurface design. Background Art

[0002] With the rapid development of electronic information technology and electromagnetic pulse technology, electronic devices are getting smaller in size, higher in integration, and higher in operating frequency, making their electromagnetic sensitivity problems increasingly prominent. In addition, the electromagnetic environment in which electronic devices are located is becoming more and more complex, facing electromagnetic pulse threats generated by a large number of natural phenomena and human factors. The electromagnetic pulse threats generated by natural phenomena include: electrostatic discharge, lightning, etc.; the strong electromagnetic pulse threats generated by human factors include: nuclear electromagnetic pulse generated by high-altitude nuclear explosion, high-power microwave generated by high-power microwave weapons, etc. Therefore, the development and research of strong electromagnetic pulse protection technology have very important engineering application value.

[0003] Compared with frequency selective surfaces, energy selective surfaces can flexibly switch between transmission and shielding states under the irradiation of electromagnetic waves with different power densities, and can be effectively applied to the current complex and changeable electromagnetic environment. On the premise of ensuring normal signal transmission and reception, it can adaptively switch states to protect against high-power electromagnetic pulses. In addition, with the continuous broadening of communication frequency bands, existing energy selective surfaces still have the design difficulty of being difficult to cover ultra-wide communication frequency bands, and it is difficult to meet the requirements of today's wireless communication systems. Summary of the Invention

[0004] The purpose of the present invention is to overcome the disadvantages and deficiencies of the prior art, and provide an electromagnetic pulse protection energy selective surface with ultra-high power density in the full frequency band. This energy selective surface realizes adjustable functions and can switch between two states of transmission and shielding, breaking the limitation of the single function of frequency selective surfaces and the narrow bandwidth limitation of other energy selective surfaces. When low-power energy is incident, it has the advantages of low insertion loss, ultra-wide passband, and transmission bandwidth covering 0 - 18 GHz, far exceeding existing energy selective surfaces. When high-power energy is incident, it has the advantages of high shielding efficiency, ultra-wide stopband, and shielding bandwidth covering 0 - 18 GHz, superior to existing energy selective surfaces.

[0005] Another purpose of the present invention is to provide a communication device including the above-mentioned energy selective surface.

[0006] The purpose of the present invention can be achieved by adopting the following technical solutions:

[0007] A full-band ultra-high power density electromagnetic pulse protection energy selection surface, comprising a first dielectric substrate and a second dielectric substrate which are stacked in sequence, and an air gap layer is arranged between the first dielectric substrate and the second dielectric substrate. A first metal unit is arranged on the top of the first dielectric substrate, and a second metal unit is arranged on the bottom of the second dielectric substrate. Both the first metal unit and the second metal unit are centrosymmetric structures.

[0008] Further, the first metal unit includes a first rectangular metal patch and four second rectangular metal patches. The first rectangular metal patch is located at the center of the first dielectric substrate, and the four second rectangular metal patches are located on the four sides of the first dielectric substrate. A first welding gap is arranged between each second rectangular metal patch and the first rectangular metal patch, and a first diode is welded to each first welding gap.

[0009] Further, both the first rectangular metal patch and the second rectangular metal patches are chamfered rectangular metal patches.

[0010] Further, the size of the first rectangular metal patch is larger than that of each second rectangular metal patch.

[0011] Further, the second metal unit includes a third rectangular metal patch and four fourth rectangular metal patches. The third rectangular metal patch is located at the center of the second dielectric substrate, and the four fourth rectangular metal patches are located on the four sides of the second dielectric substrate. A second welding gap is arranged between each fourth rectangular metal patch and the third rectangular metal patch, and a second diode is welded to each second welding gap.

[0012] Further, both the third rectangular metal patch and the fourth rectangular metal patches are chamfered rectangular metal patches.

[0013] Further, the size of the third rectangular metal patch is larger than that of each fourth rectangular metal patch.

[0014] Further, the thickness of the first dielectric substrate and the second dielectric substrate is 0.5 mm to 0.52 mm.

[0015] Further, the thickness of the air gap layer is 1.8 mm to 2.2 mm.

[0016] Another object of the present invention can be achieved by adopting the following technical solution:

[0017] A communication device, comprising at least one of the above-mentioned full-band ultra-high power density electromagnetic pulse protection energy selection surfaces.

[0018] The present invention has the following beneficial effects compared with the prior art:

[0019] 1. When the energy selective surface is irradiated by low-power signals, the present invention achieves an ultra-wide transmission frequency band and ultra-low insertion loss. When high-power microwaves (HPM) are incident, the energy selective surface has an ultra-wide stop band and ultra-high shielding efficiency, etc.

[0020] 2. When low-power energy is incident, the diode is turned off, and within 0 - 18 GHz, the insertion loss is less than 1 dB. When high-power energy is incident, the diode is turned on, and within 0 - 18 GHz, the shielding efficiency is greater than 20 dB. It has the advantages of ultra-low insertion loss, ultra-high shielding efficiency, ultra-wide passband, ultra-wide stop band, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following-described drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on the structures shown in these drawings.

[0022] Figure 1 It is a schematic structural diagram of an energy selective surface for protecting against electromagnetic pulses with ultra-high power density in the full frequency band according to an embodiment of the present invention.

[0023] Figure 2 It is a schematic structural diagram of the first metal unit of an energy selective surface for protecting against electromagnetic pulses with ultra-high power density in the full frequency band according to an embodiment of the present invention.

[0024] Figure 3 It is a schematic structural diagram of the second metal unit of an energy selective surface for protecting against electromagnetic pulses with ultra-high power density in the full frequency band according to an embodiment of the present invention.

[0025] Figure 4 It is a curve graph of the transmission coefficient of an energy selective surface for protecting against electromagnetic pulses with ultra-high power density in the full frequency band according to an embodiment of the present invention in the low-power wave transmission and high-power protection states.

[0026] Among them, 100 - the first dielectric substrate, 101 - the first metal unit, 102 - the first rectangular metal patch, 103 - the second rectangular metal patch, 104 - the first diode, 200 - the second dielectric substrate, 201 - the second metal unit, 202 - the third rectangular metal patch, 203 - the fourth rectangular metal patch, 204 - the second diode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] For the convenience of clearly describing the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish identical or similar items with basically the same functions and roles. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and do not limit their sequence. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and the terms "first" and "second" do not necessarily limit that they are different.

[0028] It should be noted that in the embodiments of the present invention, words such as "for example" are used to give examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Exactly speaking, using words such as "exemplary" or "for example" aims to present relevant concepts in a specific way.

[0029] In the embodiments of the present invention, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after. "At least one (item)" or its similar expression refers to any combination of these items, including any combination of single item (item) or plural items (items). For example, at least one (item) of a, b, and c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, where a, b, and c can be single or multiple.

[0030] Embodiment:

[0031] As Figure 1 shown, this embodiment provides an electromagnetic pulse protection energy selection surface with ultra-high power density in the full frequency band. This energy selection surface is applied to various communication devices, and it includes a first dielectric substrate 100 and a second dielectric substrate 200 which are stacked in sequence. The first dielectric substrate 100 and the second dielectric substrate 200 are separated by an air gap layer 300. A first metal unit 101 is arranged on the top of the first dielectric substrate 100, and a second metal unit 201 is arranged on the bottom of the second dielectric substrate 200. Both the first metal unit 101 and the second metal unit 201 are centrosymmetric structures.

[0032] As Figures 1 to 2As shown in the figure, the first metal unit 101 includes a first rectangular metal patch 102 and four second rectangular metal patches 103. The first rectangular metal patch 102 is located at the center of the first dielectric substrate 100, and the four second rectangular metal patches 103 are located on the four sides (the upper and lower sides, the left and right sides) of the first dielectric substrate 100. A first welding gap is provided between each second rectangular metal patch 103 and the first rectangular metal patch 102, that is, there are a total of four first welding gaps, and each first welding gap welds a first diode 104.

[0033] Furthermore, both the first rectangular metal patch 102 and the second rectangular metal patches 103 are chamfered rectangular metal patches. The use of chamfered rectangular metal patches can reduce the capacitance of the first welding gaps and optimize the passband characteristics. The size of the first rectangular metal patch 102 is larger than the size of each second rectangular metal patch 103.

[0034] As Figures 1 to 3 shown in the figure, the structure of the second metal unit 201 is the same as that of the first metal unit 101. It includes a third rectangular metal patch 202 and four fourth rectangular metal patches 203. The third rectangular metal patch 202 is located at the center of the second dielectric substrate 200, and the four fourth rectangular metal patches 203 are located on the four sides (the upper and lower sides, the left and right sides) of the second dielectric substrate 200. A second welding gap is provided between each fourth rectangular metal patch and the third rectangular metal patch, that is, there are a total of four second welding gaps, and each second welding gap welds a second diode 204.

[0035] Furthermore, both the third rectangular metal patch 202 and the fourth rectangular metal patches 203 are chamfered rectangular metal patches. The use of chamfered rectangular metal patches can reduce the capacitance of the second welding gaps and optimize the passband characteristics. The size of the third rectangular metal patch 202 is larger than the size of each fourth rectangular metal patch 203.

[0036] In this embodiment, the thicknesses of the first dielectric substrate 100 and the second dielectric substrate 200 are 0.508 mm; the thickness of the air gap layer 300 is 2 mm; both the first diode 104 and the second diode 204 are PIN diodes.

[0037] As Figure 4 shown in the figure, it is the transmission coefficient curve graph of the full-band ultra-high power density electromagnetic pulse protection energy selection surface in the low-power wave transmission and high-power protection states of this embodiment. When low-power energy is incident, the diode is cut off, and within 0 - 18 GHz, the insertion loss is less than 1 dB. When high-power energy is incident, the diode is turned on, and within 0 - 18 GHz, the shielding efficiency is greater than 20 dB. It can be seen that this energy selection surface has the advantages of ultra-low insertion loss, ultra-high shielding efficiency, ultra-wide passband, ultra-wide stopband, etc.

[0038] In summary, the energy selective surface of the present invention realizes adjustable functions and can switch between two states of transmission and shielding, breaking the limitations of the single function of the frequency selective surface and the narrow bandwidth of other energy selective surfaces. When low-power energy is incident, it has the advantages of low insertion loss and ultra-wide passband, and the transmission bandwidth covers 0 - 18 GHz, far exceeding the existing energy selective surfaces. When high-power energy is incident, it has the advantages of high shielding efficiency and ultra-wide stopband, and the shielding bandwidth covers 0 - 18 GHz, being superior to the existing energy selective surfaces.

[0039] Although the present invention has been described herein in connection with embodiments, however, in the process of implementing the claimed invention, those skilled in the art can understand and realize other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the like. In the specification, the term "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions listed in the specification. Certain measures are recited in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0040] Although the present invention has been described in connection with specific features and their embodiments, it is obvious that various modifications and combinations can be made without departing from the spirit and scope of the present invention. Accordingly, this specification and the drawings are merely exemplary descriptions of the present invention and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the present invention and its equivalent technologies, the present invention also intends to include these changes and modifications.

Claims

1. A full-band ultra-high power density electromagnetic pulse protection energy selective surface, characterized in that: The invention comprises a first dielectric substrate and a second dielectric substrate which are stacked in sequence, wherein the first dielectric substrate and the second dielectric substrate are separated by an air gap layer, a first metal unit is arranged on the top of the first dielectric substrate, and a second metal unit is arranged on the bottom of the second dielectric substrate, and both the first metal unit and the second metal unit are centrally symmetrical structures.

2. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 1 is characterized in that: The first metal unit includes a first rectangular metal patch and four second rectangular metal patches, the first rectangular metal patch is located at the center of the first dielectric substrate, the four second rectangular metal patches are located on four sides of the first dielectric substrate, a first welding gap is arranged between each second rectangular metal patch and the first rectangular metal patch, and a first diode is welded in each first welding gap.

3. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 2 is characterized in that: The first rectangular metal patch and the second rectangular metal patch are both corner-cut rectangular metal patches.

4. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 2, characterized in that: The size of the first rectangular metal patch is greater than the size of each second rectangular metal patch.

5. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 1, characterized in that: The second metal unit includes a third rectangular metal patch and four fourth rectangular metal patches, the third rectangular metal patch is located at the center of the second dielectric substrate, the four fourth rectangular metal patches are located on four sides of the second dielectric substrate, a second welding gap is arranged between each fourth rectangular metal patch and the third rectangular metal patch, and a second diode is welded in each second welding gap.

6. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 5, characterized in that: The third rectangular metal patch and the fourth rectangular metal patch are both corner-cut rectangular metal patches.

7. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to claim 5, characterized in that: The size of the third rectangular metal patch is greater than the size of each fourth rectangular metal patch.

8. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to any one of claims 1 to 7, characterized in that: The thickness of the first dielectric substrate and the second dielectric substrate is 0.5 mm to 0.52 mm.

9. The full-band ultra-high power density electromagnetic pulse protection energy selective surface according to any one of claims 1 to 7, characterized in that: The thickness of the air gap layer is 1.8 mm to 2.2 mm.

10. A communication device, characterized in that: It comprises at least one full-band ultra-high power density electromagnetic pulse protection energy selective surface as described in any one of claims 1 to 9.

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