Elastic wave device, high-frequency module, and communication device

Abstract

The invention relates to an elastic wave device, a high-frequency module and a communication device, and provides an elastic wave device capable of realizing miniaturization of a module in which a plurality of components including the elastic wave device are arranged. An elastic wave device (10) is provided with a substrate (20), an external connection electrode (40) disposed on a first main surface (201) of the substrate (20), and an external shield layer (30) disposed on a side surface (203) of the substrate (20). The substrate (20) has a first main surface (201) and a second main surface (202) facing each other, and a side surface (203) connecting the first main surface (201) and the second main surface (202). The front end surface (402) of the external connection electrode (40) is exposed.

Description

Technical Field

[0001] The present invention relates to an elastic wave device, a high-frequency module, and a communication device, and particularly to an elastic wave device having an external shielding layer, a high-frequency module having the elastic wave device, and a communication device having the high-frequency module. Background Art

[0002] In Patent Document 1, a high-frequency module is disclosed which includes a transmission filter and a reception filter as elastic wave filters (elastic wave devices). The high-frequency module of Patent Document 1 has metal shielding walls between the transmission filter and the reception filter and between the transmission filter and other components of the high-frequency module. The metal shielding walls improve the isolation between the transmission filter and the reception filter and the isolation between the transmission filter and other components.

[0003] Patent Document 1: International Publication No. 2022 / 102288

[0004] However, in the high-frequency module of Patent Document 1, since a metal shielding wall is required, it is difficult to miniaturize the high-frequency module. Summary of the Invention

[0005] An object of the present invention is to provide an elastic wave device, a high-frequency module having the elastic wave device, and a communication device having the high-frequency module, which can miniaturize a module in which a plurality of components including the elastic wave device are arranged.

[0006] An elastic wave device according to an aspect of the present invention includes a substrate, external connection electrodes, and an external shielding layer. The substrate has a first main surface and a second main surface facing each other, and a side surface connecting the first main surface and the second main surface. The external connection electrodes are disposed on the first main surface of the substrate. The external shielding layer is disposed on the side surface of the substrate. The front end surfaces of the external connection electrodes are exposed.

[0007] A high-frequency module according to an aspect of the present invention includes the elastic wave device and a mounting substrate. The elastic wave device is disposed on the mounting substrate.

[0008] A communication device according to an aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

[0009] According to an elastic wave device, a high-frequency module, and a communication device according to an aspect of the present invention, it is possible to miniaturize a module in which a plurality of components including the elastic wave device are arranged. Brief Description of the Drawings

[0010] Figure 1 It is a top view of the elastic wave device of Embodiment 1.

[0011] Figure 2is a cross-sectional view of the elastic wave device described above, corresponding to Figure 1 the X1-X1 plane of

[0012] Figure 3 is a cross-sectional view of the elastic wave device described above, corresponding to Figure 1 the X2-X2 plane of

[0013] Figure 4 is a cross-sectional view of the elastic wave device of Embodiment 2.

[0014] Figure 5 is a cross-sectional view of the elastic wave device described above, corresponding to a cross-section different from Figure 4

[0015] Figure 6 is a circuit structure diagram of the communication device of Embodiment 2.

[0016] Figure 7 is a partial cross-sectional view of the high-frequency module of Embodiment 2.

[0017] Figure 8 is a partial cross-sectional view of the high-frequency module of Embodiment 3.

[0018] Figure 9 is a partial cross-sectional view of the high-frequency module of a modification of Embodiment 3.

[0019] Figure 10 is a partial cross-sectional view of the high-frequency module of Embodiment 4.

[0020] Figure 11 is a partial cross-sectional view of the high-frequency module of Modification 1 of Embodiment 4.

[0021] Figure 12 is a partial cross-sectional view of the high-frequency module of Modification 2 of Embodiment 4.

[0022] Figure 13 is a partial cross-sectional view of the high-frequency module of Embodiment 5.

[0023] Figure 14 is a partial cross-sectional view of the high-frequency module of Modification 1 of Embodiment 5.

[0024] Figure 15 is a partial cross-sectional view of the high-frequency module of Modification 2 of Embodiment 5.

[0025] Figure 16 is a partial top view of the high-frequency module of Embodiment 6.

[0026] Figure 17 is a partial cross-sectional view of the high-frequency module described above, corresponding to Figure 16 the X3-X3 cross-section of

[0027] ​Figure 18 is a partial cross-sectional view of the high-frequency module of Embodiment 7.

[0028] Figure 19 is a top view of the high-frequency module of Embodiment 8.

[0029] Figure 20 is a top view of the high-frequency module of Embodiment 9.

[0030] Figure 21 is a top view of the high-frequency module of Modification 1 of Embodiment 9.

[0031] Description of reference numerals: 1, 1a... high-frequency module; 2... mounting substrate; 21... main surface; 23... insulating layer; 24... electrode (first electrode); 241... convex portion; 25... electrode (second electrode); 3... resin layer; 4... first component; 5... second component; 16... antenna; 17... signal processing circuit; 18... external connection terminal; 181... antenna terminal; 182... signal output terminal; 183... signal input terminal; 110... switch; 111... common terminal; 112, 113... selection terminals; 121... first matching circuit; 122... second matching circuit; 131... transmit filter; 132... receive filter; 141... third matching circuit; 142... fourth matching circuit; 151... power amplifier; 152... low-noise amplifier; 171... RF signal processing circuit; 172... baseband signal processing circuit; 10, 10a, 10b, 10c... surface acoustic wave device (surface acoustic wave device, first surface acoustic wave device, second surface acoustic wave device); 20... substrate; 201... first main surface; 202... second main surface; 203... side surface; 30... external shielding layer; 40... external connection electrode; 401... front end surface; 402... front end surface; 41... first connection electrode; 42... second connection electrode; 50... outer cover layer; 501... fourth main surface; 502... third main surface; 60... functional electrode; 70... wiring layer; 71... wiring portion; 72... wiring portion; 80... support layer; 90... resin layer; 100... communication device; D1... first direction; D2... second direction; D3... third direction; H1... distance; H2... distance; R1... configuration area; R11... first area; R12... second area; SP1... hollow space. Detailed embodiments

[0032] Hereinafter, the high-frequency module and the communication device according to the embodiment will be described with reference to the accompanying drawings. Each of the drawings referred to in the following embodiments is a schematic diagram, and the ratios of the sizes and thicknesses of the respective components in the drawings do not necessarily reflect the actual size ratios.

[0033] (Embodiment 1)

[0034] (1) Surface acoustic wave device

[0035] As Figures 1 to 3 shown, the surface acoustic wave device 10 according to Embodiment 1 includes a substrate 20, an external shielding layer 30, and a plurality of external connection electrodes 40. In addition, as Figure 2 and 3 show, the surface acoustic wave device 10 includes a cover layer 50, a functional electrode 60, a wiring layer 70, a support layer 80, and a resin layer 90.

[0036] (1.1) Substrate

[0037] The substrate 20 is, for example, a piezoelectric substrate. More specifically, the substrate 20 is, for example, a piezoelectric substrate. Examples of the material of the piezoelectric substrate are lithium tantalate, lithium niobate, or quartz.

[0038] As Figure 2 and Figure 3 shown, the substrate 20 has a first main surface 201, a second main surface 202, and a side surface 203. The first main surface 201 and the second main surface 202 face each other in the thickness direction of the substrate 20 (hereinafter referred to as "first direction D1"). The side surface 203 connects the first main surface 201 and the second main surface 202. When viewed from above in the first direction D1, the substrate 20 is square, but is not limited thereto, and may be rectangular, for example.

[0039] (1.2) Cover layer

[0040] The cover layer 50 is, for example, flat. When viewed from above in the first direction D1, the cover layer 50 is square, but is not limited to square, and may be rectangular, for example. The cover layer 50 is substantially the same size as the substrate 20 when viewed from above in the first direction D1. The cover layer 50 is disposed on the support layer 80. The cover layer 50 has a fourth main surface 501 and a third main surface 502 that face each other in the first direction D1. The third main surface 502 of the cover layer 50 faces the first main surface 201 of the substrate 20 in the first direction D1. In addition, the third main surface 502 of the cover layer 50 is exposed.

[0041] The cover layer 50 has electrical insulation properties. The cover layer 50 includes, for example, a resin and a filler. Examples of the resin are epoxy resin, polyimide resin, or phenolic resin, but are not limited to these materials. Examples of the material of the filler are inorganic materials. Examples of the material of the filler are inorganic materials such as silica and ceramics, but are not limited thereto.

[0042] (1.3) Outer shielding layer

[0043] The outer shielding layer 30 is disposed on the side surface 203 of the substrate 20. More specifically, as Figure 2 and Figure 3 shown, the outer shielding layer 30 is a prismatic member that covers all the side surfaces of the substrate 20. In addition, the outer shielding layer 30 may further cover the second main surface 202 of the substrate 20.

[0044] The outer shielding layer 30 has a multilayer structure formed by laminating a plurality of metal layers, but is not limited to the multilayer structure and may be a single metal layer. A single metal layer includes one or more metals.

[0045] (1.4) External connection electrodes

[0046] Each of the plurality of external connection electrodes 40 electrically connects the electrode of the mounting substrate of the module in which the surface acoustic wave device 10 is disposed to the wiring layer 70. The material of the external connection electrode 40 is, for example, a suitable metal material such as copper, nickel, or an alloy having these metals as a main body.

[0047] Each of the plurality of external connection electrodes 40 penetrates the outer cover layer 50 in the first direction D1. Each of the plurality of external connection electrodes 40 has a front end face 401 and a front end face 402 at both ends in the first direction D1. The front end face 401 of the external connection electrode 40 is connected to the functional electrode 60 or the wiring layer 70 on the first main surface 201 of the substrate 20. That is, each of the plurality of external connection electrodes 40 is disposed on the first main surface 201 of the substrate 20.

[0048] Each of the front end faces 402 of the plurality of external connection electrodes 40 is exposed.

[0049] Each of the front end faces 402 of the plurality of external connection electrodes 40 is disposed on the same plane as the fourth main surface 501 of the outer cover layer 50. Therefore, when the surface acoustic wave device 10 is disposed on the mounting substrate of the module, the distance in the first direction D1 between the fourth main surface 501 of the outer cover layer 50 of the surface acoustic wave device 10 and the main surface of the mounting substrate of the module on which the surface acoustic wave device 10 is disposed can be shortened. Therefore, the high-frequency module including the surface acoustic wave device 10 can be miniaturized.

[0050] The plurality of external connection electrodes 40 include a first connection electrode 41 connected to the functional electrode 60 and a second connection electrode 42 connected to the outer shielding layer 30.

[0051] (1.5) Functional electrodes

[0052] The functional electrode 60 is disposed on the first major surface 201 of the substrate 20. The functional electrode 60 includes, for example, an IDT (Interdigital Transducer) electrode. The material of the IDT electrode is, for example, an appropriate metallic material such as aluminum, copper, platinum, gold, silver, titanium, nickel, chromium, molybdenum, tungsten, or an alloy having any of these metals as a main component. In addition, the IDT electrode may have a structure in which a plurality of metal films made of these metals or alloys are laminated.

[0053] (1.6) Wiring layer

[0054] The wiring layer 70 is disposed on the first major surface 201 of the substrate 20. The wiring layer 70 includes a wiring portion 71 and a wiring portion 72. The wiring portion 71 electrically connects the first connection electrode 41 and the functional electrode 60. The wiring portion 72 electrically connects the second connection electrode 42 and the external shielding layer 30. The material of the wiring layer 70 is, for example, an appropriate metallic material such as aluminum, copper, platinum, gold, silver, titanium, nickel, chromium, molybdenum, tungsten, or an alloy having any of these metals as a main component. In addition, the wiring layer 70 may have a structure in which a plurality of metal films made of these metals or alloys are laminated.

[0055] (1.7) Support layer

[0056] As Figure 2 and Figure 3 shown, the support layer 80 is formed on the first major surface 201 of the substrate 20 and is disposed between the substrate 20 and the outer cover layer 50 in the first direction D1.

[0057] The support layer 80 is, for example, rectangular when viewed from above in the first direction D1 and surrounds the functional electrode 60.

[0058] The support layer 80 has electrical insulation. The material of the support layer 80 is, for example, a synthetic resin such as epoxy resin or polyimide. In addition, the support layer 80 does not include a filler. In addition, the support layer 80 is not limited to a structure that does not include a filler and may include a filler.

[0059] (1.8) Resin layer

[0060] As Figure 2 and Figure 3 shown, the resin layer 90 is disposed between the wiring portion 71 in the wiring layer 70 and the external shielding layer 30. The resin layer 90 has electrical insulation. The resin layer 90 is an insulator for insulating the wiring portion 71 and the external shielding layer 30.

[0061] The material of the resin layer 90 is, for example, a synthetic resin such as epoxy resin or polyimide.

[0062] (2) Effects

[0063] The surface acoustic wave device 10 according to Embodiment 1 includes a substrate 20, an external connection electrode 40, and an external shielding layer 30. The substrate 20 has a first main surface and a second main surface facing each other, and a side surface connecting the first main surface and the second main surface. The external connection electrode 40 is disposed on the first main surface 201 of the substrate 20. The external shielding layer 30 is disposed on the side surface 203 of the substrate 20. The front end surface 402 of the external connection electrode 40 is exposed. Thus, in the surface acoustic wave device 10 according to Embodiment 1, in a module in which a plurality of components including the surface acoustic wave device are arranged, the external shielding layer 30 functions as a shielding member between the surface acoustic wave device 10 and other components, and between two other components. Further, in the surface acoustic wave device 10, since the external connection electrode 40 is in direct contact with the electrode of the mounting substrate of the module, the surface acoustic wave device 10 can be made thinner.

[0064] In addition, the surface acoustic wave device 10 according to Embodiment 1 further includes an outer cover layer 50. The outer cover layer 50 has a third main surface 502 and a fourth main surface 501 facing each other. The third main surface 502 of the outer cover layer 50 faces the first main surface 201 of the substrate 20. The fourth main surface 501 of the outer cover layer 50 is exposed. The front end surface 402 of the external connection electrode 40 and the fourth main surface 501 of the outer cover layer 50 are arranged on the same plane. Thus, in the surface acoustic wave device 10 according to Embodiment 1, in a module including the surface acoustic wave device 10, the distance between the surface acoustic wave device 10 and the mounting substrate of the module can be reduced. Therefore, it is easy to make the module including the surface acoustic wave device 10 thinner.

[0065] (Embodiment 2)

[0066] (1) Surface acoustic wave device

[0067] The surface acoustic wave device 10a according to Embodiment 2 is different from the surface acoustic wave device 10 according to Embodiment 1 in the positional relationship between the front end surfaces 402 of a plurality of external connection electrodes 40 and the fourth main surface 501 of the outer cover layer 50.

[0068] In the surface acoustic wave device 10a according to Embodiment 2, as shown in Figure 4 and Figure 5 , the distance H1 in the first direction D1 between the front end surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is smaller than the distance H2 in the first direction D1 between the fourth main surface 501 of the outer cover layer 50 and the first main surface 201 of the substrate 20.

[0069] More specifically, as shown in Figure 4 and Figure 5As shown, the external connection electrode 40 does not penetrate the outer cover layer 50, and the front end face 402 of the external connection electrode 40 is exposed from the fourth main surface 501 of the outer cover layer 50. Thus, when the surface acoustic wave device 10a is disposed on the mounting substrate of the module, the distance between the fourth main surface 501 of the outer cover layer 50 of the surface acoustic wave device 10a and the main surface of the mounting substrate of the module where the surface acoustic wave device 10a is disposed is further shortened.

[0070] (2) High-frequency module

[0071] As Figure 6 shown, the high-frequency module 1 of Embodiment 2 is used for a communication device 100, for example. The communication device 100 is a mobile phone such as a smart phone, for example. In addition, the communication device 100 is not limited to being a mobile phone, and may be a wearable terminal such as a smart watch, for example. The high-frequency module 1 is a module that can correspond to 4G (Fourth Generation Mobile Communication) standards, 5G (Fifth Generation Mobile Communication) standards, and the like, for example. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio).

[0072] (2.1) Circuit structure of the high-frequency module

[0073] Hereinafter, Figure 6 the circuit structure of the high-frequency module 1 of Embodiment 2 will be described.

[0074] As Figure 6 shown, the high-frequency module 1 of Embodiment 2 includes: a plurality of external connection terminals 18, a switch 110, a first matching circuit 121, a second matching circuit 122, a transmission filter 131, a reception filter 132, a third matching circuit 141, a fourth matching circuit 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 18 include an antenna terminal 181, a signal output terminal 182, and a signal input terminal 183. The first matching circuit 121, the transmission filter 131, the third matching circuit 141, and the power amplifier 151 in the high-frequency module 1 are included in the transmission path. The second matching circuit 122, the reception filter 132, the fourth matching circuit 142, and the low-noise amplifier 152 in the high-frequency module 1 are included in the reception path.

[0075] (2.1.1) Power amplifier

[0076] The power amplifier 151 is an amplifier that amplifies the transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal output terminal 182. The output terminal of the power amplifier 151 is connected to the transmit filter 131 via the third matching circuit 141.

[0077] (2.1.2) Transmit Filter

[0078] The transmit filter 131 is a filter that allows the transmission signal to pass through. The transmit filter 131 is, for example, a surface acoustic wave (SAW) filter including a plurality of series-arm resonators and a plurality of shunt-arm resonators. The SAW filter is, for example, a filter that utilizes surface acoustic waves. The transmit filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmit filter 131 is connected to the output terminal of the power amplifier 151 via the third matching circuit 141. The output terminal of the transmit filter 131 is connected to the switch 110 via the first matching circuit 121.

[0079] (2.1.3) Low-Noise Amplifier

[0080] The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The output terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal input terminal 183. The input terminal of the low-noise amplifier 152 is connected to the receive filter 132 via the fourth matching circuit 142.

[0081] (2.1.4) Receive Filter

[0082] The receive filter 132 is a filter that allows the received signal to pass through. The receive filter 132 is, for example, a surface acoustic wave (SAW) filter including a plurality of series-arm resonators and a plurality of shunt-arm resonators. The SAW filter is, for example, a filter that utilizes surface acoustic waves. The receive filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receive filter 132 is connected to the switch 110 via the second matching circuit 122. The output terminal of the receive filter 132 is connected to the input terminal of the low-noise amplifier 152 via the fourth matching circuit 142.

[0083] (2.1.5) Switch

[0084] Switch 110 switches the filter connected to antenna terminal 181 between transmission filter 131 and reception filter 132. That is, switch 110 is a switch for connecting either the reception path or the transmission path to antenna terminal 181. Switch 110 has a common terminal 111 and a plurality (two in the illustrated example) of selection terminals 112 and 113. The common terminal 111 is connected to antenna terminal 181. Selection terminal 112 is connected to transmission filter 131 via first matching circuit 121. Selection terminal 113 is connected to reception filter 132 via second matching circuit 122.

[0085] (2.1.6) Matching circuit

[0086] First matching circuit 121 is a circuit for achieving impedance matching between the output terminal of transmission filter 131 and selection terminal 112 of switch 110. First matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0087] Second matching circuit 122 is a circuit for achieving impedance matching between selection terminal 113 of switch 110 and the input terminal of reception filter 132. Second matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0088] Third matching circuit 141 is a circuit for achieving impedance matching between the output terminal of power amplifier 151 and the input terminal of transmission filter 131. Third matching circuit 141 includes at least one of one or more capacitors and one or more inductors.

[0089] Fourth matching circuit 142 is a circuit for achieving impedance matching between the output terminal of reception filter 132 and the input terminal of low-noise amplifier 152. Fourth matching circuit 142 includes at least one of one or more capacitors and one or more inductors. In addition, in Figure 6 Fourth matching circuit 142 is grounded, but fourth matching circuit 142 may not be grounded.

[0090] (2.2) Structure of high-frequency module

[0091] As Figure 7 shown, high-frequency module 1 includes mounting substrate 2, surface acoustic wave device 10a, and resin layer 3. Surface acoustic wave device 10a includes, for example, transmission filter 131.

[0092] As Figure 7 shown, mounting substrate 2 has main surface 21. Surface acoustic wave device 10a is disposed on main surface 21 of mounting substrate 2.

[0093] The mounting substrate 2 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the first direction D1. The plurality of conductive layers are formed in a prescribed pattern determined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the first direction D1. The material of each conductive layer is, for example, copper. The mounting substrate 2 is, for example, an HTCC (High Temperature Co-fired Ceramics) substrate. The mounting substrate 2 is not limited to a resin multilayer substrate, and may also be, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate, a printed wiring board, or a resin multilayer substrate.

[0094] In addition, the mounting substrate 2 is not limited to an HTCC substrate, and may also be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a prescribed pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a prescribed pattern determined for each layer. The conductive layer is formed in a prescribed pattern different from the prescribed pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a prescribed pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the main surface 21 of the mounting substrate 2. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0095] In addition, an insulating layer 23 and a plurality of electrodes 24 are disposed on the main surface 21 of the mounting substrate 2.

[0096] The insulating layer 23 has electrical insulation properties. The insulating layer 23 is, for example, a solder resist. The insulating layer 23 covers, for example, the portion of the main surface 21 of the mounting substrate 2 other than the plurality of electrodes 24.

[0097] The plurality of electrodes 24 are connected to the plurality of external connection electrodes 40 of the elastic wave device 10a in a one-to-one manner. Each of the plurality of external connection electrodes 40 is in direct contact with each of the plurality of electrodes 24. "Each of the plurality of external connection electrodes 40 is in direct contact with each of the plurality of electrodes 24" means that at least a part of the external connection electrode 40 is in direct contact with at least a part of the electrode 24. That is, as long as there is a portion where the external connection electrode 40 is in contact with the electrode 24 without passing through solder or the like, the external connection electrode 40 and the electrode 24 may also be joined by solder or the like. The electrode 24 among the plurality of electrodes 24 that is connected to the second connection electrode 42 is connected to the ground via the mounting substrate 2. As a result, the shielding effect of the external shielding layer 30 is improved.

[0098] Each of the plurality of electrodes 24 includes a pad electrode and a convex portion 241 disposed on the pad electrode. The convex portion 241 is formed, for example, by plating a metal material on the pad electrode. Thereby, the connection between the plurality of electrodes 24 and the plurality of external connection electrodes 40 of the elastic wave device 10b becomes easy.

[0099] (3) Communication device

[0100] As Figure 6 shown, the communication device 100 includes a high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0101] The antenna 16 is connected to the antenna terminal 181 of the high-frequency module 1. The antenna 16 has a transmission function of radiating a transmission signal output from the high-frequency module 1 as an electromagnetic wave, and a reception function of receiving a reception signal from the outside as an electromagnetic wave and outputting it to the high-frequency module 1.

[0102] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes the signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes the transmission signal and the reception signal.

[0103] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 171 performs signal processing on high-frequency signals.

[0104] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the signal-processed transmission signal to the high-frequency module 1. In addition, the RF signal processing circuit 171 performs amplification, down-conversion, and other signal processing on the reception signal output from the high-frequency module 1, and outputs the signal-processed reception signal to the baseband signal processing circuit 172.

[0105] The baseband signal processing circuit 172 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 172 performs prescribed signal processing on the transmission signal from outside the signal processing circuit 17. The reception signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as a voice signal for a call.

[0106] In addition, the RF signal processing circuit 171 also has the function of a control unit that controls the connection of the switch 110 included in the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signals, reception signals). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 through a control signal (not shown). In addition, the control unit may be provided outside the RF signal processing circuit 171. For example, it may be provided in the high-frequency module 1 or the baseband signal processing circuit 172.

[0107] (4) Effects

[0108] The surface acoustic wave device 10a of Embodiment 2 further includes a cover layer 50. The cover layer 50 has a third main surface 502 and a fourth main surface 501 that face each other. The third main surface 502 of the cover layer 50 faces the first main surface 201 of the substrate 20. The fourth main surface 501 of the cover layer 50 is exposed. The distance H1 in the first direction D1 between the front end surface 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is shorter than the distance H2 in the first direction D1 between the fourth main surface 501 of the cover layer 50 and the first main surface 201 of the substrate 20. Thus, according to the surface acoustic wave device 10a of Embodiment 2, it becomes easier to further reduce the height of the high-frequency module including the surface acoustic wave device 10a.

[0109] The high-frequency module 1 of Embodiment 2 includes a surface acoustic wave device 10a and a mounting substrate 2. The surface acoustic wave device 10a is disposed on the mounting substrate 2. Thus, in the high-frequency module 1 of Embodiment 2, the distance between the surface acoustic wave device 10a and the mounting substrate 2 can be made closer. Therefore, it becomes easier to reduce the height of the high-frequency module 1.

[0110] The communication device 100 of Embodiment 2 includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. Thus, according to the communication device 100 of Embodiment 2, in the high-frequency module 1, the external shielding layer 30 functions as a shielding member between the surface acoustic wave device 10a and other components, and between two other components. And since the surface acoustic wave device 10a is disposed in the high-frequency module 1 in a state where the external connection electrode 40 is in direct contact with the electrode 24 of the mounting substrate 2, it is possible to reduce the height of the surface acoustic wave device 10a in the high-frequency module 1.

[0111] (Embodiment 3)

[0112] (1) Structure

[0113] The high-frequency module 1 of Embodiment 3 includes, for example, a surface acoustic wave device 10b. In the surface acoustic wave device 10b, the distance in the first direction D1 between the front end face 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 is longer than the distance in the first direction D1 between the third main surface 502 of the outer cover layer 50 and the first main surface 201 of the substrate 20. More specifically, the difference between the distance in the first direction D1 between the front end face 402 of the external connection electrode 40 and the first main surface 201 of the substrate 20 and the distance in the first direction D1 between the third main surface 502 of the outer cover layer 50 and the first main surface 201 of the substrate 20 is 35 μm or less.

[0114] In addition, in the high-frequency module 1 of Embodiment 3, the electrode 24 of the mounting substrate 2 is, for example, a pad electrode. The thickness of the electrode 24 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1.

[0115] Thereby, in the surface acoustic wave device 10b, the connectivity between the external connection electrode 40 and the electrode 24 of the mounting substrate 2 is improved as compared with the surface acoustic wave device 10 and the surface acoustic wave device 10a. In addition, the high-frequency module 1 can reduce the thickness in the first direction D1.

[0116] In addition, in the high-frequency module 1 of Embodiment 3, as Figure 8 shown, in the first direction D1, the surface acoustic wave device 10b is in contact with the insulating layer 23. Thereby, according to the high-frequency module 1 of Embodiment 3, the thickness of the high-frequency module 1 in the first direction D1 can be reduced. In addition, in the high-frequency module 1, since the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1, the surface acoustic wave device 10b is stably arranged on the mounting substrate 2.

[0117] (2) Effects

[0118] In the high-frequency module 1 of Embodiment 3, the mounting substrate 2 includes an insulating layer 23 disposed on the main surface 21 where the surface acoustic wave device 10b is arranged. The surface acoustic wave device 10b is in contact with the insulating layer 23 of the mounting substrate 2 in the first direction D1. Thereby, according to the high-frequency module 1 of Embodiment 3, the close contact property of the surface acoustic wave device 10b with respect to the mounting substrate 2 is improved. Therefore, the high-frequency module 1 can be made lower in height.

[0119] (Modification Example)

[0120] The high-frequency module 1 of the modification example of Embodiment 3 includes a surface acoustic wave device 10.

[0121] In the high-frequency module 1 of the modification example of Embodiment 3, as Figure 9 shown, in addition to Figure 8In addition to the pad electrodes shown, there is also a convex portion 241. Thereby, the thickness in the first direction D1 of the high-frequency module 1 can be reduced, and the connection between the external connection electrode 40 of the surface acoustic wave device 10 and the electrode 24 of the mounting substrate 2 becomes reliable.

[0122] Similarly, the high-frequency module 1 of Embodiment 3 may also include a surface acoustic wave device 10a. Specifically, it has the same structure as the Figure 9 high-frequency module 1 shown, and the convex portion 241 of the electrode 24 is further enlarged.

[0123] According to the above structure, similar to the high-frequency module of Embodiment 3, the close contact between the surface acoustic wave device 10 or 10a and the mounting substrate 2 is improved. Therefore, the high-frequency module 1 can be made lower in height.

[0124] (Embodiment 4)

[0125] (1) Structure

[0126] The high-frequency module 1 of Embodiment 4 includes, for example, a surface acoustic wave device 10. In the high-frequency module 1 of Embodiment 4, as Figure 10 shown, there is no insulating layer 23 in the arrangement region R1 of the main surface 21 of the mounting substrate 2.

[0127] More specifically, in the high-frequency module 1 of Embodiment 4, as Figure 10 shown, there is no insulating layer 23 in the arrangement region R1 of the main surface 21 of the mounting substrate 2. Here, the "arrangement region R1 of the main surface 21 of the mounting substrate 2" refers to the region of the main surface 21 of the mounting substrate 2 that overlaps with the surface acoustic wave device 10b when viewed from the first direction D1.

[0128] In the high-frequency module 1 of Embodiment 4, since the surface acoustic wave device 10 does not contact the insulating layer 23, a part of the resin layer 3 is formed between the surface acoustic wave device 10 and the main surface 21 of the mounting substrate 2. Therefore, the connection between the external connection electrode 40 of the surface acoustic wave device 10 and the electrode 24 of the mounting substrate 2 becomes reliable.

[0129] (2) Effects

[0130] In the high-frequency module 1 of Embodiment 4, the mounting substrate 2 includes an insulating layer 23 disposed on the main surface 21 where the surface acoustic wave device 10 is arranged. There is no insulating layer 23 in the arrangement region R1 of the main surface 21 of the mounting substrate 2. The arrangement region R1 of the main surface 21 of the mounting substrate 2 overlaps with the surface acoustic wave device 10 when viewed from the first direction D1. Thereby, in the high-frequency module 1 of Embodiment 4, the distance in the first direction D1 between the surface acoustic wave device 10 and the mounting substrate 2 can be reduced. Therefore, the high-frequency module 1 can be made lower in height.

[0131] (Modification 1)

[0132] In the high-frequency module 1 of the first modification of Embodiment 4, as Figure 11 shown, on the main surface 21 of the mounting substrate 2, the thickness in the first direction D1 of the insulating layer 23 is non-uniform in the arrangement region R1 and the region outside the arrangement region R1.

[0133] More specifically, in the high-frequency module 1 of Embodiment 4, as Figure 11 shown, within the arrangement region R1 of the main surface 21 of the mounting substrate 2, the thickness in the first direction D1 of the insulating layer 23 is smaller than the thickness in the first direction D1 of the insulating layer 23 in the region outside the arrangement region R1. Also in this structure, the high-frequency module 1 can be further reduced in height. In addition, in Figure 11 it, the high-frequency module 1 has the surface acoustic wave device 10b, but the high-frequency module 1 may also include the surface acoustic wave device 10 or 10a.

[0134] In the high-frequency module 1 of the first modification of Embodiment 4, the mounting substrate 2 includes the insulating layer 23 disposed on the main surface 21 where the surface acoustic wave device 10b is arranged. In the arrangement region R1 of the main surface 21 of the mounting substrate 2, the thickness in the first direction D1 of the insulating layer 23 is smaller than the thickness in the first direction D1 of the insulating layer 23 in the region outside the arrangement region R1. Thereby, in the high-frequency module 1 of the first modification of Embodiment 4, the distance in the first direction D1 between the surface acoustic wave device 10b and the mounting substrate 2 can be reduced. Therefore, the high-frequency module 1 can be reduced in height.

[0135] (First modification)

[0136] In the high-frequency module 1 of the second modification of Embodiment 4, similar to the first modification of Embodiment 4, as Figure 12 shown, on the main surface 21 of the mounting substrate 2, the thickness in the first direction D1 of the insulating layer 23 is non-uniform in the arrangement region R1 and the region outside the arrangement region R1.

[0137] More specifically, in the high-frequency module 1 of Embodiment 4, as Figure 12 shown, within the arrangement region R1 of the main surface 21 of the mounting substrate 2, the thickness in the first direction D1 of the insulating layer 23 is smaller than the thickness in the first direction D1 of the insulating layer 23 in the region outside the arrangement region R1. Also in this structure, the high-frequency module 1 can be further reduced in height. In addition, in Figure 12In the high-frequency module 1 shown, the electrode 24 does not have a convex portion 241, and the thickness of the electrode 24 as a pad electrode in the first direction D1 is greater than the thickness of the insulating layer 23 in the first direction D1 in the arrangement region R1. Here, the thickness of the electrode 24 in the first direction D1 may also be the same as the thickness of the insulating layer 23 in the first direction D1 in the region other than the arrangement region R1. In the high-frequency module 1 of the modification 2 of the embodiment 4, similar to the high-frequency module 1 of the modification 1 of the embodiment 4, the high-frequency module 1 can be made lower in height.

[0138] (Embodiment 5)

[0139] (1) Structure

[0140] The high-frequency module 1 of the embodiment 5 has the same structure as the high-frequency module 1 of the embodiment 4. In the high-frequency module 1 of the embodiment 5, the mounting substrate 2 has an electrode 25 on the main surface 21. The electrode 25 is, for example, a pad electrode and is connected to the external shielding layer 30 of the surface acoustic wave device 10, 10a, or 10b. The electrode 25 corresponds to the second electrode of the present disclosure. The electrode 25 is connected to the ground via the mounting substrate 2, for example.

[0141] In the high-frequency module 1 of the embodiment 5, as Figure 13 shown, the electrode 25 is arranged on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shielding layer 30 of the surface acoustic wave device 10. More specifically, the electrode 25 of the mounting substrate 2 and the external shielding layer 30 of the surface acoustic wave device 10 are connected by solder 251. In addition, the electrode 25 of the mounting substrate 2 may be in a frame shape along the outer peripheral edge of the arrangement region R1. Alternatively, the mounting substrate 2 may have a plurality of electrodes 25 along the outer peripheral edge of the arrangement region R1, and each of the plurality of electrodes 25 is connected to the external shielding layer 30 of the surface acoustic wave device 10 by a plurality of solders 251. Thus, the external shielding layer 30 is connected to the ground not only through the second connection electrode 42 but also through the electrode 25, so the shielding performance of the external shielding layer 30 is improved.

[0142] (2) Effect

[0143] In the high-frequency module 1 of the embodiment 5, the mounting substrate 2 has the electrode 24 connected to the external connection electrode 40 and the electrode 25 connected to the external shielding layer 30 of the surface acoustic wave device 10. Thus, in the high-frequency module 1 of the embodiment 5, the shielding performance of the external shielding layer 30 of the surface acoustic wave device 10 can be improved.

[0144] (Modification 1)

[0145] The high-frequency module 1 of Modification 1 of Embodiment 5 has the same structure as the high-frequency module 1 of Modification 1 of Embodiment 4. The high-frequency module 1 of Modification 1 of Embodiment 5 has an electrode 25 connected to the external shielding layer 30 of the surface acoustic wave device 10.

[0146] More specifically, as Figure 14 shown, in the high-frequency module 1 of Modification 1 of Embodiment 5, the electrode 25 is disposed on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shielding layer 30 of the surface acoustic wave device 10. With this structure, the external shielding layer 30 is connected to the ground not only through the second connection electrode 42 but also through the electrode 25, so that the shielding performance of the external shielding layer 30 is improved.

[0147] (Modification 2)

[0148] The high-frequency module 1 of Modification 2 of Embodiment 5 has the same structure as the high-frequency module 1 of Modification 2 of Embodiment 4. The high-frequency module 1 of Modification 2 of Embodiment 5 has an electrode 25 connected to the external shielding layer 30 of the surface acoustic wave device 10.

[0149] More specifically, as Figure 15 shown, in the high-frequency module 1 of Modification 2 of Embodiment 5, the electrode 25 is disposed on the main surface 21 of the mounting substrate 2. The electrode 25 is connected to the external shielding layer 30 of the surface acoustic wave device 10. With this structure, the external shielding layer 30 is connected to the ground not only through the second connection electrode 42 but also through the electrode 25, so that the shielding performance of the external shielding layer 30 is improved.

[0150] (Embodiment 6)

[0151] (1) Structure

[0152] In the high-frequency module 1 of Embodiment 6, similar to the high-frequency module 1 of Embodiment 3, the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1. In the high-frequency module 1 of Embodiment 6, also in the arrangement region R1, a second region R12 where the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1 surrounds a first region R11 where the thickness of the insulating layer 23 in the first direction D1 is small or the insulating layer 23 does not exist.

[0153] In the high-frequency module 1 of Embodiment 6, as Figure 16 and Figure 17 shown, the insulating layer 23 does not exist in the first region R11 in the arrangement region R1. In addition, in Figure 16 , the resin layer 3 is omitted. Further, in the high-frequency module 1 of Embodiment 6, as Figure 16 and Figure 17As shown, in the second region R12 in the configuration region R1, the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1. Further, as Figure 16 and Figure 17 shown, the second region R12 surrounds the first region R11.

[0154] In the high-frequency module 1 of Embodiment 6, in the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1. Further, in the high-frequency module 1 of Embodiment 6, when viewed from above in the first direction D1, the second region R12 surrounds the first region R11, and thus a structure in which the resin layer 3 is not provided in the first region R11 can be formed. Thereby, in the resin layer 3, stress generated in the direction of peeling the mounting substrate 2 and the surface acoustic wave device 10b in the first direction D1 can be reduced.

[0155] Further, in the high-frequency module 1 of Embodiment 6, in the first region R11, a structure can be formed in which the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 in the second region R12. According to this structure, also in the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 in the first direction D1. Further, in the high-frequency module 1 of Embodiment 6, when viewed from above in the first direction D1, the second region R12 surrounds the first region R11. Therefore, a structure in which the resin layer 3 is not provided in the first region R11 can be easily formed.

[0156] (2) Effect

[0157] In the high-frequency module 1 of Embodiment 6, the configuration region R1 of the main surface 21 of the mounting substrate 2 that overlaps the surface acoustic wave device 10b when viewed from above in the first direction D1 includes the first region R11 and the second region R12. In the first region R11, the thickness of the insulating layer 23 in the first direction D1 is smaller than the thickness of the insulating layer 23 in the first direction D1 in the second region R12, or the insulating layer 23 does not exist. In the second region R12, the surface acoustic wave device 10b is in contact with the insulating layer 23 of the mounting substrate 2 in the first direction D1. The second region R12 surrounds the first region R11. Thereby, in the high-frequency module 1 of Embodiment 6, the surface acoustic wave device 10b is not easily peeled off from the mounting substrate 2.

[0158] (Embodiment 7)

[0159] (1) Structure

[0160] In the high-frequency module 1a of Embodiment 7, similar to the high-frequency module 1 of Embodiment 6, in the arrangement region R1, a second region R12 where the surface acoustic wave device 10c contacts the insulating layer 23 in the first direction D1 surrounds a first region R11 where the thickness of the insulating layer 23 in the first direction D1 is smaller than that of the second region R12 or the insulating layer 23 does not exist. In the high-frequency module 1a of Embodiment 7, moreover, the surface acoustic wave device 10c does not have a cover layer 50.

[0161] More specifically, in the high-frequency module 1a of Embodiment 7, as Figure 18 shown, the insulating layer 23 does not exist in the first region R11 in the arrangement region R1. Further, in the high-frequency module 1a of Embodiment 7, as Figure 18 shown, in the second region R12 in the arrangement region R1, the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1. Moreover, as Figure 18 shown, the second region R12 surrounds the first region R11.

[0162] Further, in the high-frequency module 1a of Embodiment 7, as Figure 18 shown, a hollow space SP1 is formed between the substrate 20 of the surface acoustic wave device 10c and the mounting substrate 2. When viewed from above in the first direction D1, the hollow space SP1 overlaps with the first region R11.

[0163] As described above, in the second region R12, the surface acoustic wave device 10b contacts the insulating layer 23 in the first direction D1. Therefore, even if the resin layer 3 is formed after the surface acoustic wave device 10c is mounted on the mounting substrate 2, the resin layer 3 does not enter the hollow space SP1. Accordingly, in the high-frequency module 1a of Embodiment 7, the state where the resin layer 3 does not exist in the hollow space SP1 is maintained. Therefore, in the high-frequency module 1a of Embodiment 7, even if the surface acoustic wave device 10c does not have a cover layer 50, the state where the functional electrodes 60 of the surface acoustic wave device 10c are arranged in the hollow space SP1 can be maintained.

[0164] Therefore, in the high-frequency module 1a of Embodiment 7, since the surface acoustic wave device 10c does not have a cover layer 50, the surface acoustic wave device 10c can be made lower in height, and thus the high-frequency module 1 can be made lower in height.

[0165] (2) Effects

[0166] In the high-frequency module 1a of Embodiment 7, a hollow space SP1 is formed between the substrate 20 of the surface acoustic wave device 10c and the mounting substrate 2. When viewed from the first direction D1, the hollow space SP1 overlaps with the first region R11. Thus, in the high-frequency module 1 of Embodiment 7, the distance in the first direction D1 between the substrate 20 of the surface acoustic wave device 10c and the mounting substrate 2 can be further reduced. Therefore, the surface acoustic wave device 10c can be made lower in height, and the high-frequency module 1 can be made smaller.

[0167] (Embodiment 8)

[0168] (1) Structure

[0169] The high-frequency module 1 of Embodiment 8 further includes a first component 4 and a second component 5. When viewed from the first direction D1, a surface acoustic wave device 10 is disposed between the first component 4 and the second component 5.

[0170] As Figure 19 shown, the high-frequency module 1 of Embodiment 8 includes a first component 4 and a second component 5. The first component 4 includes, for example, a power amplifier 151. In addition, the second component 5 includes, for example, a low-noise amplifier 152.

[0171] In addition, for example, as Figure 19 shown, the high-frequency module 1 of Embodiment 8 includes a plurality of (three in Figure 19 ) surface acoustic wave devices 10. The plurality of surface acoustic wave devices 10 includes, for example, a transmit filter 131 and a receive filter 132. In addition, in the high-frequency module 1 of Embodiment 8, the plurality of surface acoustic wave devices 10 includes, for example, a receive filter (not shown in Figure 7 ).

[0172] In addition, in the high-frequency module 1 of Embodiment 8, when viewed from the first direction D1, a surface acoustic wave device 10 is disposed between the first component 4 and the second component 5. Here, "when viewed from the first direction D1, a surface acoustic wave device 10 is disposed between the first component 4 and the second component 5" means that a surface acoustic wave device 10 is disposed on a line segment connecting any point included in the first component 4 and any point included in the second component 5.

[0173] In addition, in the high-frequency module 1 of Embodiment 8, when viewed from the first direction D1, any one of the plurality of elastic wave devices 10 is disposed between the first component 4 and the second component 5. That is, at least one elastic wave device 10 is disposed on a line segment connecting any point included in the first component 4 and any point included in the second component 5. More specifically, when viewed from the first direction D1, they are arranged in the order of the first component 4, the plurality of elastic wave devices 10, and the second component 5 along the second direction D2. The plurality of elastic wave devices 10 are arranged in a third direction D3 orthogonal to the second direction D2 between the first component 4 and the second component 5.

[0174] In addition, in the high-frequency module 1 of Embodiment 8, when the second component 5 is observed from the first component 4, the plurality of elastic wave devices 10 are arranged without gaps. Here, "when the second component 5 is observed from the first component 4, the plurality of elastic wave devices 10 are arranged without gaps" means that when viewed from above in the direction from the first component 4 toward the second component 5, the plurality of elastic wave devices 10 are arranged so as not to form gaps. Specifically, in the high-frequency module 1 of Embodiment 8, when viewed from the second direction D2, the plurality of elastic wave devices 10 are arranged so as not to form gaps.

[0175] Thereby, in the high-frequency module 1 of Embodiment 8, the isolation degree between the first component 4 and each of the plurality of elastic wave devices 10 can be improved. In addition, the isolation degree between the second component 5 and each of the plurality of elastic wave devices 10 can be improved. Furthermore, the isolation degree between the first component 4 and the second component 5 can be improved.

[0176] (2) Effects

[0177] The high-frequency module 1 of Embodiment 8 further includes a first component 4 and a second component 5. When viewed from the first direction D1, an elastic wave device 10 is disposed between the first component 4 and the second component 5. Thereby, according to the high-frequency module 1 of Embodiment 8, the respective isolation degrees between the first component 4 and the elastic wave device 10, between the elastic wave device 10 and the second component 5, and between the first component 4 and the second component 5 can be improved.

[0178] In addition, in the high-frequency module 1 of Embodiment 8, a plurality of surface acoustic wave devices 10 are provided. Any one of the plurality of surface acoustic wave devices 10 is arranged on the straight line connecting the first component 4 and the second component 5. When observing the second component 5 from the first component 4, the plurality of surface acoustic wave devices 10 are arranged without gaps. Thus, according to the high-frequency module 1 of Embodiment 8, the respective isolation degrees between the first component 4 and the surface acoustic wave device 10, between the surface acoustic wave device 10 and the second component 5, and between the first component 4 and the second component 5 can be improved. In addition, in the high-frequency module 1, since a plurality of surface acoustic wave devices 10 are arranged between the first component 4 and the second component 5, the isolation degree between the first component 4 and the second component 5 can be easily improved.

[0179] (Embodiment 9)

[0180] (1) Structure

[0181] Similar to the high-frequency module 1 of Embodiment 8, the high-frequency module 1 of Embodiment 9 includes a first component 4 and a second component 5. When viewed from above in the first direction D1, a plurality of surface acoustic wave devices 10 are arranged between the first component 4 and the second component 5. The plurality of surface acoustic wave devices 10 are in contact with each other.

[0182] In the high-frequency module 1 of Embodiment 9, as Figure 20 shown, the plurality of surface acoustic wave devices 10 are in contact with each other. More specifically, the outer shielding layer 30 of one of the plurality of surface acoustic wave devices 10 is in contact with the outer shielding layer 30 of another surface acoustic wave device 10. One surface acoustic wave device 10 corresponds to the first surface acoustic wave device of the present disclosure. Another surface acoustic wave device 10 corresponds to the second surface acoustic wave device of the present disclosure. Thus, in the high-frequency module 1 of Embodiment 9, the isolation degree between the first component 4 and the second component 5 is further improved. In this case, for example, as Figure 21 shown, the plurality of surface acoustic wave devices 10 may also be arranged in a straight line in the third direction D3.

[0183] (2) Effect

[0184] In the high-frequency module 1 of Embodiment 9, the plurality of surface acoustic wave devices 10 include a first surface acoustic wave device 10 and a second surface acoustic wave device 10. The outer shielding layer 30 of the first surface acoustic wave device 10 is in contact with the outer shielding layer 30 of the second surface acoustic wave device 10. Thus, in the high-frequency module 1 of Embodiment 9, the effect of improving the respective isolation degrees between the first component 4 and the second component 5 based on the outer shielding layer 30 of the surface acoustic wave device 10 is further enhanced.

[0185] (Modification 1)

[0186] In the high-frequency module 1 of Embodiment 9, as Figure 20As shown, a plurality of surface acoustic wave devices 10 are in contact with each other. More specifically, the plurality of surface acoustic wave devices 10 are arranged in a straight line in the third direction D3. With this structure, the effect of further improving the isolation between the first component 4 and the second component 5 of the external shielding layer 30 of the surface acoustic wave device 10 is further enhanced.

[0187] (Other Modification Examples)

[0188] The high-frequency module 1 of Embodiment 2 includes a surface acoustic wave device 10a, but instead of the surface acoustic wave device 10a, or in addition to the surface acoustic wave device 10a, it may also include a surface acoustic wave device 10 or a surface acoustic wave device 10b.

[0189] In addition, the high-frequency module 1 of Embodiment 8 or 9 may include a surface acoustic wave device 10a, 10b, or 10c instead of the surface acoustic wave device 10.

[0190] In addition, in the communication device 100 of Embodiment 2, the high-frequency module 1 included in the communication device 100 may instead of the surface acoustic wave device 10a, or in addition to the surface acoustic wave device 10a, it may also include a surface acoustic wave device 10 or a surface acoustic wave device 10b.

[0191] In addition, the communication device 100 of Embodiment 2 may include the high-frequency module 1 of any one of Embodiments 3 to 8.

[0192] In addition, the high-frequency modules 1 of Embodiments 2 to 9 may also have an external shielding layer covering the resin layer 3. Here, the external shielding layer of the high-frequency module 1 may also be in contact with the external shielding layer 30 of the surface acoustic wave device 10. Thereby, miniaturization of the high-frequency module 1 can be achieved, and the shielding effect of the external shielding layer of the high-frequency module 1 can be improved.

[0193] (Mode)

[0194] The surface acoustic wave devices (10 to 10c) of the first mode include a substrate (20), an external connection electrode (40), and an external shielding layer (30). The substrate (20) has a first main surface (201) and a second main surface (202) facing each other, and a side surface (203) connecting the first main surface (201) and the second main surface (202). The external connection electrode (40) is disposed on the first main surface (201) of the substrate (20). The external shielding layer (30) is disposed on the side surface (203) of the substrate (20). The front end surface (402) of the external connection electrode (40) is exposed.

[0195] In the elastic wave device (10 to 10c) according to the above structure, in a module in which a plurality of components including the elastic wave device (10 to 10c) are arranged, the external shielding layer (30) functions as a shielding member between the elastic wave device (10 to 10c) and other components, and between two other components. Further, in the elastic wave device (10 to 10c), the external connection electrode (40) is in direct contact with the electrode of the mounting substrate of the module. Therefore, in the high-frequency module (1), the elastic wave device (10 to 10c) can be made to have a lower height.

[0196] Based on the first mode, the elastic wave device (10) of the second mode further includes an outer cover layer (50). The outer cover layer (50) has a third main surface (502) and a fourth main surface (501) that face each other. The third main surface (502) of the outer cover layer (50) faces the first main surface (201) of the substrate (20). The fourth main surface (501) of the outer cover layer (50) is exposed. The front end surface (402) of the external connection electrode (40) and the fourth main surface (501) of the outer cover layer (50) are arranged on the same plane.

[0197] In the elastic wave device (10) according to the above structure, in a module including the elastic wave device (10), the distance between the elastic wave device (10) and the mounting substrate of the module can be made closer. Therefore, it is easy to make the module including the elastic wave device (10) have a lower height.

[0198] Based on the first mode, the elastic wave device (10) of the third mode further includes an outer cover layer (50). The outer cover layer (50) has a third main surface (502) and a fourth main surface (501) that face each other. The third main surface (502) of the outer cover layer (50) faces the first main surface (201) of the substrate (20). The fourth main surface (501) of the outer cover layer (50) is exposed. The distance (H1) in the first direction (D1) between the front end surface (402) of the external connection electrode (40) and the first main surface (201) of the substrate (20) is shorter than the distance (H2) in the first direction (D1) between the fourth main surface (501) of the outer cover layer (50) and the first main surface (201) of the substrate (20). The first direction (D1) is the thickness direction of the substrate (20).

[0199] In the elastic wave device (10) according to the above structure, it is easy to further reduce the height of the high-frequency module (1) including the elastic wave device (10).

[0200] The high-frequency module (1, 1a) of the fourth mode includes the elastic wave device (10 to 10c) of any one of the first mode to the third mode and a mounting substrate (2). The elastic wave device (10 to 10c) is arranged on the mounting substrate (2).

[0201] The high-frequency modules (1, 1a) according to the above structure can reduce the distance between the elastic wave device (10 - 10c) and the mounting substrate (2). Therefore, it is easy to reduce the height of the high-frequency module 1.

[0202] Based on the high-frequency modules (1, 1a) of the fourth mode, in the high-frequency modules (1, 1a) of the fifth mode, the mounting substrate (2) includes an insulating layer (23) disposed on the main surface (21) where the elastic wave device (10 - 10c) is disposed. The elastic wave device (10 - 10c) contacts the insulating layer (23) of the mounting substrate (2) in the first direction (D1). The first direction (D1) is the thickness direction of the substrate (20).

[0203] According to the high-frequency modules (1, 1a) of the above structure, the close contact between the elastic wave device (10 - 10c) and the mounting substrate (2) is improved. Therefore, the height of the high-frequency modules (1, 1a) can be reduced.

[0204] Based on the fifth mode, in the high-frequency modules (1, 1a) of the sixth mode, the configuration area (R1) of the main surface (21) of the mounting substrate (2) that overlaps the elastic wave device (10 - 10c) when viewed from the first direction (D1) includes a first area (R11) and a second area (R12). In the first area (R11), the thickness of the insulating layer (23) in the first direction (D1) is smaller than that in the second area (R12), or the insulating layer (23) does not exist. In the second area (R12), the elastic wave device (10 - 10c) contacts the insulating layer (23) of the mounting substrate (2) in the first direction (D1). The second area (R12) surrounds the first area (R11).

[0205] According to the high-frequency modules (1, 1a) of the above mode, the elastic wave device (10 - 10c) is not easily peeled off from the mounting substrate (2).

[0206] Based on the sixth mode, in the high-frequency module (1a) of the seventh mode, a hollow space (SP1) is formed between the substrate (20) of the elastic wave device (10c) and the mounting substrate (2). When viewed from the first direction (D1), the hollow space (SP1) overlaps with the first area (R11).

[0207] According to the high-frequency module (1a) of the above mode, the distance between the substrate (20) of the elastic wave device (10c) and the mounting substrate (2) in the first direction (D1) can be further reduced. Therefore, the height of the elastic wave device (10c) can be reduced, and the high-frequency module (1a) can be miniaturized.

[0208] Based on the fourth mode, in the high-frequency module (1) of the eighth mode, the mounting substrate (2) includes an insulating layer (23) disposed on the main surface (21) where the surface acoustic wave devices (10 to 10b) are arranged. In the arrangement region (R1) on the main surface (21) of the mounting substrate (2), the thickness of the insulating layer (23) in the first direction (D1) is smaller than the thickness of the insulating layer (23) in the first direction (D1) in the region other than the arrangement region (R1) on the main surface (21) of the mounting substrate (2), or the insulating layer (23) does not exist. The first direction (D1) is the thickness direction of the substrate (20). The arrangement region (R1) on the main surface (21) of the mounting substrate (2) overlaps with the surface acoustic wave devices (10 to 10b) when viewed from above in the first direction (D1).

[0209] For the high-frequency module (1) with the above structure, the distance between the surface acoustic wave devices (10 to 10b) and the mounting substrate (2) in the first direction (D1) can be reduced. Therefore, the high-frequency module (1) can be made lower in height.

[0210] Based on any one of the fourth mode to the eighth mode, in the high-frequency module (1) of the ninth mode, the mounting substrate (2) has a first electrode (24) connected to an external connection electrode and a second electrode (25) connected to the external shielding layer (30) of the surface acoustic wave devices (10 to 10b).

[0211] For the high-frequency module (1) with the above mode, the shielding performance of the external shielding layer (30) of the surface acoustic wave devices (10 to 10b) can be improved.

[0212] Based on any one of the fourth mode to the ninth mode, the high-frequency modules (1, 1a) of the tenth mode further include a first component (4) and a second component (5). When viewed from above in the first direction (D1), the surface acoustic wave device (10) is disposed between the first component (4) and the second component (5). The first direction (D1) is the thickness direction of the substrate (20).

[0213] For the high-frequency modules (1, 1a) with the above mode, the isolation degree between the first component (4) and the surface acoustic wave devices (10 to 10c), between the surface acoustic wave devices (10 to 10c) and the second component (5), and between the first component (4) and the second component (5) can be improved.

[0214] Based on any one of the fourth to ninth modes, the high-frequency module (1, 1a) of the eleventh mode further includes a plurality of surface acoustic wave devices (10 to 10c), a first component, and a second component. Each of the plurality of surface acoustic wave devices (10 to 10c) is a surface acoustic wave device (10 to 10c) of any one of the first to third modes. Any one of the plurality of surface acoustic wave devices (10 to 10c) is arranged on the straight line connecting the first component (4) and the second component (5). When observing the second component (5) from the first component (4), the plurality of surface acoustic wave devices (10 to 10c) are arranged without gaps.

[0215] According to the high-frequency module (1, 1a) of the above mode, the isolation degrees between the first component (4) and the surface acoustic wave device (10 to 10c), between the surface acoustic wave device (10 to 10c) and the second component (5), and between the first component (4) and the second component (5) can be improved respectively. In addition, in the high-frequency module (1, 1a), one surface acoustic wave device (10 to 10c) is arranged between the first component (4) and the second component (5), so the isolation degree between the first component (4) and the second component (5) is easily improved.

[0216] Based on the eleventh mode, in the high-frequency module (1, 1a) of the twelfth mode, the plurality of surface acoustic wave devices (10) include a first surface acoustic wave device (10 to 10c) and a second surface acoustic wave device (10 to 10c). The outer shielding layer (30) of the first surface acoustic wave device (10 to 10c) is in contact with the outer shielding layer (30) of the second surface acoustic wave device (10 to 10c).

[0217] According to the high-frequency module (1, 1a) of the above mode, the effect of further improving the isolation degrees between the first component (4) and the second component (5) based on the outer shielding layer (30) of the surface acoustic wave device (10) is further enhanced.

[0218] The communication device (100) of the thirteenth mode includes a high-frequency module (1, 1a) and a signal processing circuit (17) connected to the high-frequency module (1, 1a).

[0219] According to the communication device (100) of the above mode, in the high-frequency module (1, 1a), the outer shielding layer (30) functions as a shielding member between the surface acoustic wave device (10 to 10c) and other components, and between two other components. And the surface acoustic wave device (10 to 10c) is arranged in the high-frequency module (1, 1a) in a state where the external connection electrode (40) is in direct contact with the electrode (24) of the mounting substrate (2), so the surface acoustic wave device (10 to 10c) can be made low-profile in the high-frequency module (1, 1a).

Claims

1. An elastic wave device, wherein: have: A substrate having a first main surface and a second main surface facing each other, and a side surface connecting the first main surface and the second main surface; an external connection electrode, disposed on the first main surface of the substrate; as well as An external shielding layer is disposed on a side of the substrate, The front end surface of the external connection electrode is exposed.

2. The elastic wave device according to claim 1, wherein: The invention further comprises an outer cover layer, wherein the outer cover layer has a third main surface and a fourth main surface facing each other, The third main surface of the cover layer faces the first main surface of the substrate, The fourth main surface of the outer cover layer is exposed, The front end surface of the external connection electrode and the fourth main surface of the cover layer are arranged on the same plane.

3. The elastic wave device according to claim 1, wherein: The invention further comprises an outer cover layer, wherein the outer cover layer has a third main surface and a fourth main surface facing each other, The third main surface of the cover layer faces the first main surface of the substrate, The fourth main surface of the outer cover layer is exposed, A distance between the front end surface of the external connection electrode and the first main surface of the substrate in the thickness direction of the substrate, that is, in the first direction, is shorter than a distance between the fourth main surface of the cover layer and the first main surface of the substrate in the first direction.

4. A high frequency module, wherein: have: The elastic wave device according to claim 1; and A mounting substrate is provided with the elastic wave device.

5. The high frequency module according to claim 4, wherein: The mounting substrate includes an insulating layer disposed on a main surface on which the elastic wave device is disposed. The elastic wave device is in contact with the insulating layer of the mounting substrate in a first direction which is a thickness direction of the substrate.

6. The high frequency module according to claim 5, wherein: The arrangement region of the main surface of the mounting substrate overlapping with the elastic wave device when viewed from the first direction includes a first region and a second region. In the first region, the thickness of the insulating layer in the first direction is smaller than the thickness of the insulating layer in the second region in the first direction, or the insulating layer does not exist, In the second region, the elastic wave device is in contact with the insulating layer of the mounting substrate in the first direction. The second area surrounds the first area.

7. The high frequency module according to claim 6, wherein: A hollow space is formed which is sandwiched between the substrate of the elastic wave device and the mounting substrate. When viewed from the first direction, the hollow space overlaps with the first area.

8. The high frequency module according to claim 4, wherein: The mounting substrate includes an insulating layer disposed on a main surface on which the elastic wave device is disposed. In the configuration area of ​​the main surface of the mounting substrate that overlaps with the elastic wave device when viewed from above in the thickness direction of the substrate, that is, the first direction, the thickness of the insulating layer in the first direction is smaller than the thickness of the insulating layer in the first direction in the area outside the configuration area on the main surface of the mounting substrate, or the insulating layer does not exist.

9. The high frequency module according to claim 4, wherein: The mounting substrate comprises: a first electrode connected to the external connection electrode; and The second electrode is connected to the outer shielding layer of the elastic wave device.

10. The high frequency module according to any one of claims 4 to 9, wherein: Also comprising a first component and a second component, The elastic wave device is disposed between the first member and the second member when viewed in plan from a first direction which is a thickness direction of the substrate.

11. The high frequency module according to any one of claims 4 to 9, wherein: Also available: a plurality of elastic wave devices, respectively, which are the elastic wave devices; first component; as well as The second component, Any one of the plurality of elastic wave devices is disposed on a straight line connecting the first member and the second member. When the second member is viewed from the first member, the plurality of elastic wave devices are arranged without any gap.

12. The high frequency module according to claim 11, wherein: The plurality of elastic wave devices include a first elastic wave device and a second elastic wave device, The outer shield layer of the first elastic wave device is in contact with the outer shield layer of the second elastic wave device.

13. A communication device, wherein: have: The high frequency module according to claim 4; and A signal processing circuit is connected to the high frequency module.

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