A semiconductor device and a method for manufacturing the same

Abstract

The present invention provides a semiconductor device and a method for manufacturing the same, relating to the field of semiconductor technology, including a pre-film layer, an oxide layer, and a surface metal layer stacked in sequence. The oxide layer includes a plurality of preset oxidation regions spaced by trenches, and the surface metal layer includes preset metal layers corresponding to the preset oxidation regions, and the preset metal layers wrap the preset oxidation regions. The surface metal layer wraps the preset oxidation regions, avoiding damage to the preset oxidation regions below the surface metal layer during release, enhancing the stability of the surface metal layer, achieving isolation and protection of the preset oxidation regions below the surface metal layer. After the release process, the surface metal layer is completely presented on the surface of the device, without occurrence of situations such as peeling off, insufficient support, and fracture.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly relates to a semiconductor device and a method for manufacturing the same. Background Art

[0002] During the manufacturing process of piezoelectric MEMS (Micro-Electro-Mechanical System) devices, as Figure 1 shown, Figure 1 Figure 2 shows a schematic diagram of the surface metal layer 2 on the device surface, where the enclosed part represents the sealing ring, which is the metal bonding ring for ball planting and sealing during packaging. The central area represents some electrical connection structures and wire parts. These parts will all be affected by the release process. In the part of the surface metal 2, the following problems are likely to occur: When the device undergoes the release process to remove the silicon oxide 1 on the surface, as Figure 2 shown, since part of the surface metal 2 is directly deposited on the silicon oxide 1, and the release process will cause serious side etching of this part of the silicon oxide 1 used as support, as Figure 3 shown, resulting in a significant reduction in the contact area between part of the surface metal 2 and the underlying silicon oxide 1, and ultimately causing the surface metal 2 to warp or break. Because the release process is a complete chemical reaction and an isotropic process, when removing a certain thickness of silicon oxide 1, the area below the surface metal 2 will also be affected to a certain extent as Figure 3 shown, which will affect various properties of the surface metal 2. Summary of the Invention

[0003] The purpose of the present invention is to provide a semiconductor device and a method for manufacturing the same, which can avoid damage to the oxide layer below the surface metal layer and enhance the stability of the surface metal layer.

[0004] On the one hand, the present invention provides a semiconductor device, including a pre-film layer, an oxide layer, and a surface metal layer stacked in sequence. The oxide layer includes a plurality of preset oxide regions separated by trenches. The surface metal layer includes a preset metal layer corresponding to the preset oxide regions, and the preset metal layer wraps the preset oxide regions.

[0005] Optionally, the preset metal layer further forms a first folded edge at the bottom end of the side wall of the preset oxide region, and the first folded edge fits on the upper surface of the film layer below the preset oxide region.

[0006] Optionally, the trench is a U-shaped trench, the preset metal layer includes a first metal layer wrapping the preset oxide region and U-shaped metal layers connected to both sides of the first metal layer, and the U-shaped metal layers match the U-shaped trenches.

[0007] Optionally, the pre-formed film layer includes at least one film layer, and at least one of the film layers includes a single-layer film layer or a composite film layer.

[0008] Optionally, the pre-formed film layer includes a first film layer, a second film layer, and a third film layer that are stacked in sequence, and the oxide layer is located on the third film layer; the third film layer partially covers the second film layer, the preset oxidation region simultaneously covers the second film layer and the third film layer, and when the preset metal layer wraps the preset oxidation region, part of the preset metal layer adheres to the second film layer at the bottom of the sidewall of the preset oxidation region, and part of the preset metal layer adheres to the third film layer at the bottom of the sidewall of the preset oxidation region.

[0009] On the other hand, the present invention provides a method for manufacturing a semiconductor device for manufacturing the above-mentioned semiconductor device, and the method includes:

[0010] Form an oxide layer on the pre-formed film layer;

[0011] Pattern etch the oxide layer to form trenches in the oxide layer, and the trenches divide the oxide layer into multiple oxidation regions;

[0012] Form a surface metal layer on the surfaces of the oxidation regions and the trenches;

[0013] Pattern the surface metal layer, remove the surface metal layer on part of the oxidation regions and on the trenches adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions;

[0014] Remove the oxidation regions other than the preset metal layer, and the remaining preset metal layer wraps the preset oxidation regions.

[0015] Optionally, the patterning of the surface metal layer, removing the surface metal layer on part of the oxidation regions and on the trenches adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions, includes:

[0016] The remaining preset metal layer covers the preset oxidation regions and extends into the trenches adjacent to the preset oxidation regions.

[0017] Optionally, the patterning of the surface metal layer, removing the surface metal layer on part of the oxidation regions and on the trenches adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions, includes:

[0018] Retain the metal layer within the preset oxidation region and the trench as the preset metal layer, and extend the preset metal layer through the trench adjacent to the preset oxidation region to the end of the upper surface of the oxidation region adjacent to the preset oxidation region.

[0019] Optionally, removing the oxidation regions other than the preset metal layer, and the remaining preset metal layer wrapping the preset oxidation region includes:

[0020] The preset metal layer is disposed along the upper surface and the sidewall of the preset oxidation region, and in the stacking direction, a hem is further formed at the bottom end of the sidewall of the preset oxidation region of the preset metal layer, and the hem fits to the upper surface of the film layer below the preset oxidation region.

[0021] Optionally, removing the oxidation regions other than the preset metal layer, and the remaining preset metal layer wrapping the preset oxidation region includes:

[0022] The preset metal layer is disposed along the upper surface and the sidewall of the preset oxidation region, and metal layer structures matching the trenches are further formed on both sides of the sidewall of the preset oxidation region of the preset metal layer.

[0023] The semiconductor device and its manufacturing method provided by the present invention include a pre-film layer, an oxidation layer, and a surface metal layer stacked in sequence. The oxidation layer includes a plurality of preset oxidation regions spaced by trenches, and the surface metal layer includes a preset metal layer corresponding to the preset oxidation region, and the preset metal layer wraps the preset oxidation region. The surface metal layer wraps the preset oxidation region, avoiding damage to the preset oxidation region below the surface metal layer during release, enhancing the stability of the surface metal layer, realizing the isolation and protection of the surface metal layer for the preset oxidation region below it. After the release process, the surface metal layer is completely presented on the device surface without occurrence of situations such as peeling off, insufficient support, and fracture. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the present invention, the drawings required for use in the present invention will be briefly introduced below. It should be understood that the following drawings only show some examples of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0025] Figure 1 is a schematic diagram of the surface metal layer of an existing semiconductor device;

[0026] Figure 2 is one of the cross-sectional schematic diagrams of the surface metal layer of an existing semiconductor device;

[0027] Figure 3 is the second cross-sectional schematic diagram of the surface metal layer of an existing semiconductor device;

[0028] Figure 4 It is a schematic diagram of the semiconductor device structure provided by the present invention;

[0029] Figure 5 It is one of the process diagrams for fabricating the semiconductor device provided by the present invention;

[0030] Figure 6 It is the second process diagram for fabricating the semiconductor device provided by the present invention;

[0031] Figure 7 is Figure 6 the top view of;

[0032] Figure 8 It is the third process diagram for fabricating the semiconductor device provided by the present invention;

[0033] Figure 9 It is the fourth process diagram for fabricating the semiconductor device provided by the present invention;

[0034] Figure 10 It is the fifth process diagram for fabricating the semiconductor device provided by the present invention;

[0035] Figure 11 is Figure 10 the top view of;

[0036] Figure 12 It is the defect diagram of the semiconductor device fabrication process provided by the present invention;

[0037] Figure 13 is Figure 12 the defect diagram after forming;

[0038] Figure 14 is Figure 13 the top view of;

[0039] Figure 15 It is the schematic layout diagram of the semiconductor device fabrication process provided by the present invention;

[0040] Figure 16 It is the sixth process diagram for fabricating the semiconductor device provided by the present invention;

[0041] Figure 17 It is the seventh process diagram for fabricating the semiconductor device provided by the present invention.

[0042] Icons: 1 - silicon oxide; 2 - surface metal; 10 - first film layer; 11 - second film layer; 12 - third film layer; 13 - oxide layer; 130 - preset oxidation region; 131 - oxidation region; 14 - surface metal layer; 140 - preset metal layer; 141 - first hem; 142 - first metal layer; 143 - U-shaped metal layer; 144 - second hem; 15 - groove; 151 - first groove; 152 - second groove; A - first virtual frame; B - second virtual frame; F - stacking direction. Detailed implementation mode

[0043] The technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention.

[0044] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by terms such as "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this invention is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, terms such as "first", "second", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0045] It should also be noted that unless otherwise clearly specified and limited, the terms "set", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0046] The present invention provides a semiconductor device. Please refer to Figure 4 As shown, it includes: a pre-film layer, an oxide layer 13, and a surface metal layer 14 stacked in sequence along the stacking direction F. The oxide layer 13 includes a plurality of preset oxidation regions 130 separated by grooves 15. The surface metal layer 14 includes a preset metal layer 140 corresponding to the preset oxidation region 130, and the preset metal layer 140 wraps the preset oxidation region 130.

[0047] The oxide layer 13 is divided into a plurality of preset oxidation regions 130 by the grooves 15. Similarly, the surface metal layer 14 is also divided into a plurality of preset metal layers 140 by the grooves 15. Each preset metal layer 140 corresponds to a preset oxidation region 130. Moreover, the preset metal layer 140 is disposed on the upper surface and side walls of the preset oxidation region 130 to wrap the preset oxidation region 130. Through the protection of the preset metal layer 140, the preset oxidation region 130 can be prevented from being damaged.

[0048] Among them, the front film layer includes at least one film layer, and the at least one film layer includes a single film layer or a composite film layer.

[0049] As Figure 4 shown, the front film layer includes a first film layer 10, a second film layer 11, and a third film layer 12 that are stacked in sequence, and an oxide layer 13 is located on the third film layer 12.

[0050] Further, the first film layer 10 can be a substrate, and the substrate can be a single film layer such as a silicon substrate or a composite film layer. The second film layer 11 can be a piezoelectric layer, and the third film layer 12 can be an electrode layer.

[0051] In some examples, the third film layer 12 partially covers the second film layer 11, a preset oxidation region 130 covers the second film layer 11, and / or the preset oxidation region 130 covers the third film layer 12, and / or the preset oxidation region 130 simultaneously covers the second film layer 11 and the third film layer 12; Figure 4 shows three setting manners of the preset oxidation regions 130. Among them, a preset oxidation region 130 wrapped by a preset metal layer 140 is on the surface of the second film layer 11, a preset oxidation region 130 wrapped by a preset metal layer 140 straddles the surfaces of the second film layer 11 and the third film layer 12, and there is also a preset oxidation region 130 wrapped by a preset metal layer 140 on the surface of the third film layer 12.

[0052] The above three setting manners basically cover the position states of the metal wires. When the preset oxidation region 130 simultaneously covers the second film layer 11 and the third film layer 12, the preset metal layer 140 wraps the preset oxidation region 130. Part of the preset metal layer 140 adheres to the second film layer 11 at the bottom end of the side wall of the preset oxidation region 130, and part of the preset metal layer 140 adheres to the third film layer 12 at the bottom end of the side wall of the preset oxidation region 130. As Figure 4 shown, the middle preset oxidation region 130 in

[0053] straddles the surfaces of the second film layer 11 and the third film layer 12.

[0054] Therefore, the present invention further provides a method for manufacturing a semiconductor device for manufacturing the above semiconductor device. The method includes:

[0055] As Figure 5 shown, step 200: form an oxide layer 13 on the front film layer.

[0056] Among them, in the examples of the present invention, the front film layer includes a first film layer 10, a second film layer 11, and a third film layer 12.

[0057] Further, the third film layer 12 partially covers the second film layer 11, and the oxide layer 13 completely covers the third film layer 12 and the second film layer 11, so that part of the oxide layer 13 directly covers the second film layer 11, and part of the oxide layer 13 covers the third film layer 12.

[0058] Since the actual thickness of the third film layer 12 is much smaller than the thickness of the oxide layer 13, the influence on the surface morphology of the oxide layer 13 is extremely small, so the surface of the oxygen-silicon layer is drawn as a plane.

[0059] As Figure 6 shown, step 201: Pattern etch the oxide layer 13 to form trenches 15 in the oxide layer 13, and the trenches 15 divide the oxide layer 13 into multiple oxide regions 131.

[0060] Figure 6 In, a first trench 151 and a second trench 152 are formed, and the first trench 151 and the second trench 152 divide the oxide layer 13 into three oxide regions 131, as Figure 7 shown.

[0061] Since the aforementioned third film layer 12 partially covers the second film layer 11, the oxide region 131 can be located on the second film layer 11, and / or the oxide region 131 covers the second film layer 11 and the third film layer 12, that is, the oxide region 131 straddles the second film layer 11 and the third film layer 12, and / or the oxide region 131 is located on the third film layer 12.

[0062] The present invention takes the three oxide regions 131 located on the second film layer 11, straddling the second film layer 11 and the third film layer 12, and located on the third film layer 12 as examples.

[0063] As Figure 8 shown, step 202: Form a surface metal layer 14 on the surfaces of the oxide region 131 and the trench 15.

[0064] The surface metal layer 14 can select the sputtering deposition method. The conformal effect of the surface metal layer 14 obtained by sputtering deposition is better, and defects can be avoided at the side walls of the trench 15, the bottom surface of the oxide layer 13, and the corners on both sides of the bottom surface.

[0065] After experimental verification, the evaporation coating method has a poor sealing effect on the surface metal layer 14. During the Figures 9 to 10 release process, the encapsulated oxide layer 13 will be partially damaged. However, even if it is partially damaged, the defective morphological result obtained by this process is still better than that before the structural optimization. Therefore, the evaporation coating method can partially improve the aforementioned problems and disadvantages, but the sputtering deposition method is better.

[0066] Step 203: Pattern the surface metal layer 14, remove the surface metal layer 14 on a part of the oxidation region 131 and the trench 15 adjacent to this part of the oxidation region 131, and the remaining surface metal layer 14 serves as the preset metal layer 140. The oxidation region 131 covered by the preset metal layer 140 serves as the preset oxidation region 130. After depositing the surface metal layer 14, pattern the surface metal layer 14, block the oxidation region 131 under the relevant graphic area to serve as the preset oxidation region 130, the preset oxidation region 130 is wrapped by the corresponding preset metal layer 140, and remove the surface metal layer 14 covering other oxidation regions 131, forming as Figure 9 shown in the morphology.

[0067] Among them, Figure 9 in, the remaining preset metal layer 140 covers the preset oxidation region 130 and extends into the trench 15 adjacent to the preset oxidation region 130 to form a first folded edge 141.

[0068] As Figure 10 shown, Step 204: Remove the oxidation region 131 outside the preset metal layer 140, and the remaining preset metal layer 140 wraps the preset oxidation region 130.

[0069] Perform a release process to remove the oxidation region 131 in other regions on the surface, and only retain the preset oxidation region 130 and the preset metal layer 140 that wraps the preset oxidation region 130, obtaining a schematic diagram of the device structure morphology as Figure 10 shown.

[0070] Figure 10 in, the preset metal layer 140 is arranged along the upper surface and side wall of the preset oxidation region 130, so that the preset metal layer 140 covers the preset oxidation region 130; and in the stacking direction F, the preset metal layer 140 also forms a first folded edge 141 at the bottom end of the side wall of the preset oxidation region 130, and the first folded edge 141 extends into the trench 15 adjacent to the preset oxidation region 130, and the first folded edge 141 fits on the upper surface of the film layer below the preset oxidation region 130. As Figure 11 shown, first folded edges 141 are respectively formed on both sides of the preset metal layer 140. Since the preset oxidation region 130 straddles the second film layer 11 and the third film layer 12, part of the first folded edge 141 fits on the second film layer 11 below the preset oxidation region 130, and part of the first folded edge 141 fits on the third film layer 12 below the preset oxidation region 130.

[0071] Although the above structure and preparation process finally achieve the stability of the surface metal layer 14, when etching to remove the surface metal layer 14 outside the first trench 151, the second trench 152 and the trench 15, the film layer at the bottom of the trench 15 (such as Figure 12 , Figure 13The third film layer 12) in it is vulnerable to over-etching. Especially for the first trench 151, the thickness of the third film layer 12 in the area of the first trench 151 is relatively thin (generally less than 100 nm), and it is easy to etch and break the third film layer 12 when over-etching the surface metal layer 14.

[0072] Since both the surface metal layer 14 and the third film layer 12 are metal materials, when facing the menu for etching the surface metal layer 14, it is impossible to have an extremely high selectivity just by adjusting the etching menu. Therefore, this shortcoming can only be solved by structural improvement.

[0073] As Figure 14 shown, a part of the third film layer 12 of the semiconductor device is connected to the surface metal layer 14 (because it is necessary to connect the circuit to achieve electrical connection). Therefore, in the connection part of the third film layer 12 and the surface metal layer 14 ( Figure 14 the part within the dotted line box in it), the situation shown in Figure 13 the dotted box in it will occur, and it will be damaged, resulting in the third film layer 12 may break, so that the electrical signal on the third film layer 12 cannot be transmitted to other areas through the wire, and then the device fails.

[0074] In the above process, the above relationship between the third film layer 12 and the surface metal layer 14 of the semiconductor device is inevitably present. Although the damage problem of the surface metal layer 14 is improved by the patterned oxide layer 13, however, this results in that when preparing the patterned surface metal layer 14, there will inevitably be a direct etching relationship between the etching area of the surface metal layer 14 and a part of the connection area of the third film layer 12 (in the trench 15 area, the surface metal layer 14 is directly deposited on the third film layer 12, so when etching this part of the surface metal layer 14, etching of the third film layer 12 will inevitably occur during the etching process).

[0075] As Figure 15 shown by the first dotted box A and the second dotted box B in it, where the first dotted box A represents a certain electrical connection structure area on the surface, and the second dotted box B represents the connection area of the third film layer 12; when not using the pre-etched oxide layer 13, although the first dotted box A and the second dotted box B overlap, due to the barrier of the oxide layer 13, it will not cause direct etching of the third film layer 12 when etching the surface metal layer 14. However, when preparing the trench 15 and removing this part of the oxide layer 13, the surface metal layer 14 and the third film layer 12 will directly contact in the trench 15 in the intersecting area of the first dotted box A and the second dotted box B. Therefore, etching of this part of the surface metal layer 14 will inevitably damage the third film layer 12, causing the damage shown in Figure 14 which is inevitable.

[0076] Therefore, in some other examples of the above step 203, such as Figure 16As shown in the figure, step 203: Pattern the surface metal layer 14, remove part of the oxidation region 131 and the surface metal layer 14 on the trench adjacent to this part of the oxidation region 131, and the remaining surface metal layer 14 serves as the preset metal layer 140. The oxidation region 131 covered by the preset metal layer 140 serves as the preset oxidation region 130 and further includes:

[0077] The preset metal layer 140 extends through the trench 15 adjacent to the preset oxidation region 130 to the end of the upper surface of the oxidation region 131 adjacent to the preset oxidation region 130.

[0078] On the basis of Figure 9 , Figure 16 In , retain the metal layer in the preset oxidation region 130 and the trench 15 as the preset metal layer 140, so that the preset metal layer 140 extends through the trench 15 adjacent to the preset oxidation region 130 to the end of the upper surface of the oxidation region 131 adjacent to the preset oxidation region 130.

[0079] During preparation, similar to the foregoing, after depositing the surface metal layer 14, pattern the surface metal layer 14, block the preset oxidation region 130, retain the surface metal layer 14 in the first trench 151 and the second trench 152, and make the boundary of the surface metal layer 14 in the trench 15 rest on the surface of the adjacent oxidation region 131 to form Figure 16 the morphology shown in the figure. Then remove the other oxidation regions 131 on the surface through the release process to obtain the structural morphology schematic diagram as shown in Figure 17 the figure.

[0080] Figure 17 In , the preset metal layer 140 is disposed along the upper surface and the side wall of the preset oxidation region 130, and the preset metal layer 140 further forms a metal layer structure matching the trench 15 on both sides of the side wall of the preset oxidation region 130, such as a U-shaped metal layer 143.

[0081] Use the preset metal layer 140 to wrap the preset oxidation region 130 below it to prevent this part of the preset oxidation region 130 from being affected by the release process and ensure the support and adhesion effects of this part of the preset oxidation region 130; at the same time, the actual morphologies on both sides of the preset metal layer 140 pattern should fit the trench 15 morphology. In the example of the present invention, there are features of a similar "U-shaped" trench 15 on both sides of the preset metal layer 140 pattern. Therefore, the preset metal layer 140 includes a first metal layer 142 (inverted U-shaped) that wraps the preset oxidation region 130 and U-shaped metal layers 143 connected to both sides of the first metal layer 142. The U-shaped metal layer 143 matches the U-shaped trench 15, the side walls of the inverted U-shaped first metal layer 142 coincide with the side walls of the U-shaped metal layer 143, and the U-shaped metal layer 143 forms a second hem 144 at the end position corresponding to the upper surface of the adjacent oxidation region 131.

[0082] The preset metal layer 140 completely wraps the preset oxidation area 130 below it, so that the preset oxidation area 130 has no contact with the outside world, ensuring that the preset metal layer 140 is complete and stable in morphology and structure as the surface metal layer 14 after the other oxidation areas 131 are released. In addition, the setting of the U-shaped metal layer 143 also ensures the integrity of the film layer below the preset oxidation area 130, solving the problem of Figure 13 Problems you may face.

[0083] In summary, the present invention patterns the bottom oxide layer 13 to prepare the groove 15, and the surface metal layer 14 is prepared along the groove 15, and then the oxide layer 13 is wrapped with the surface metal layer 14, so as to avoid the oxide layer 13 below the surface metal layer 14 from being damaged during release, thereby enhancing the stability of the surface metal layer 14, and realizing the isolation and protection of the oxide layer 13 below it by the surface metal layer 14. After the release process, the surface metal layer 14 pattern is completely presented on the device surface without falling off, insufficient support, and breakage. Furthermore, the surface metal layer 14 also fills the groove 15, ensuring that the film layers on both sides of the surface metal layer 14 pattern (for example Figure 13 The third film layer 12 has a complete morphology, which prevents the third film layer 12 from being damaged, thereby preventing the third film layer 12 from being broken or having abnormal functions. While protecting the top oxide layer 13, the third film layer 12 at the bottom is also protected. In addition, the present invention uses PVD (physical vapor deposition) process technology to prepare the surface metal layer 14, which can prevent the protection failure of the surface metal layer 14.

[0084] It should be noted that the second film layer 11 in the present invention may be more than one layer, and other film layers may be added between each second film layer 11 and the third film layer 12 .

[0085] The surface metal layer 14 may not only be a layer of metal, but may also be a composite film layer with a metal film layer on the surface.

[0086] The above description is only an example of the present invention and is not intended to limit the scope of protection of the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that, It includes a front film layer, an oxidation layer, and a surface metal layer stacked in sequence. The oxidation layer includes a plurality of preset oxidation regions spaced by grooves. The surface metal layer includes a preset metal layer corresponding to the preset oxidation regions, and the preset metal layer wraps the preset oxidation regions; the front film layer outside the preset oxidation regions is exposed; the preset metal layer further forms a first folded edge at the bottom end of the side wall of the preset oxidation region, and the first folded edge fits on the upper surface of the film layer below the preset oxidation region. Alternatively, the groove is a U-shaped groove, and the preset metal layer includes a first metal layer wrapping the preset oxidation region and U-shaped metal layers connected to both sides of the first metal layer, and the U-shaped metal layers match the U-shaped grooves.

2. The semiconductor device according to claim 1, characterized in that, The front film layer includes at least one film layer, and at least one of the film layers includes a single-layer film layer or a composite film layer.

3. The semiconductor device according to claim 2, wherein The front film layer includes a first film layer, a second film layer, and a third film layer stacked in sequence, and the oxidation layer is located on the third film layer. The third film layer partially covers the second film layer, the preset oxidation region covers the second film layer, and / or the preset oxidation region covers the third film layer, and / or the preset oxidation region simultaneously covers the second film layer and the third film layer. When the preset oxidation region simultaneously covers the second film layer and the third film layer, part of the preset metal layer fits on the second film layer at the bottom end of the side wall of the preset oxidation region, and part of the preset metal layer fits on the third film layer at the bottom end of the side wall of the preset oxidation region.

4. A method for manufacturing a semiconductor device, for manufacturing the semiconductor device according to any one of claims 1 to 3, characterized in that, It includes: Forming an oxidation layer on the front film layer; Pattern-etching the oxidation layer to form grooves in the oxidation layer, and the grooves divide the oxidation layer into a plurality of oxidation regions; Forming a surface metal layer on the surfaces of the oxidation regions and the grooves; Pattern-forming the surface metal layer, removing part of the surface metal layer on the oxidation regions and on the grooves adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions; Removing the oxidation regions outside the preset metal layer, and the remaining preset metal layer wraps the preset oxidation regions.

5. The method for manufacturing a semiconductor device according to claim 4, characterized in that, The pattern-forming the surface metal layer, removing part of the surface metal layer on the oxidation regions and on the grooves adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions, includes: The remaining preset metal layer covers the preset oxidation regions and extends into the grooves adjacent to the preset oxidation regions.

6. The manufacturing method of the semiconductor device according to claim 4, characterized in that, The pattern-forming the surface metal layer, removing part of the surface metal layer on the oxidation regions and on the grooves adjacent to the oxidation regions, and the remaining surface metal layer serves as the preset metal layer, and the oxidation regions covered by the preset metal layer serve as the preset oxidation regions, includes: Retaining the metal layer in the preset oxidation regions and the grooves as the preset metal layer, and making the preset metal layer extend through the grooves adjacent to the preset oxidation regions to the end of the upper surface of the oxidation regions adjacent to the preset oxidation regions.

7. The manufacturing method of the semiconductor device according to claim 5, characterized in that, Removing the oxidation region outside the preset metal layer, and retaining the preset metal layer to wrap the preset oxidation region, includes: The preset metal layer is disposed along the upper surface and side walls of the preset oxidation region, and in the stacking direction, a first hem is further formed at the bottom end of the side wall of the preset oxidation region of the preset metal layer, and the first hem is attached to the upper surface of the film layer below the preset oxidation region.

8. The method for manufacturing a semiconductor device according to claim 6, wherein, Removing the oxidation region outside the preset metal layer, and retaining the preset metal layer to wrap the preset oxidation region, includes: The preset metal layer is disposed along the upper surface and side walls of the preset oxidation region, and metal layer structures matching the trenches are further formed on both sides of the side wall of the preset oxidation region of the preset metal layer.

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