A plasma equipment testing method

Abstract

The invention relates to a plasma equipment testing method. The method uses a reusable test plate, wherein test holes of different diameters are drilled on the test plate, and the test plate is divided into a first sub-plate and a second sub-plate along the test holes. The cut surfaces of the first sub-plate and the second sub-plate both include semicircular holes. After the hole walls of the semicircular holes are coated with an organic coating, the first sub-plate and the second sub-plate are combined into a complete test plate. The test plate is then placed in a plasma device for etching. After etching, the test plates are separated, and measuring tools such as a metallographic microscope, a 100x microscope, and a 10x microscope are used to directly measure the residual amount of the organic coating on the hole walls of the first sub-plate and / or the second sub-plate to analyze the etching capability of the plasma device. The test plate in the method is reusable, and the testing cost is low. In addition, the method can intuitively analyze the etching capability of the plasma device through the measuring tools, without the need for slicing and analyzing each hole, thereby improving the testing efficiency.

Description

Technical Field

[0001] The present invention relates to the field of plasma equipment, and in particular to a plasma equipment testing method. Background Art

[0002] Plasma is the fourth state of matter, composed of ionized gas containing free electrons, ions, and neutral particles. A plasma machine (plasma equipment) is an industrial device that uses plasma technology for surface treatment, cleaning, etching, or material modification. It is widely used in the semiconductor and circuit board industries. For example, in circuit board production, colloid residue will remain in the holes after drilling. This residual glue will affect subsequent processes, so the circuit boards need to be plasma de-glueed in a plasma machine to etch away the residual glue in the holes. The larger the aspect ratio (board thickness to hole diameter) of the board, the more difficult it is to remove the residual glue in the hole. A very important performance of a plasma machine is its deep etching capability, that is, the maximum aspect ratio that can completely etch away the residual glue in the hole. To test the deep etching capability of a plasma machine before it leaves the factory, or to test its etching capability before use, a circuit board that has undergone normal lamination and drilling processes is used as a sample circuit board. This circuit board is then placed in the corresponding plasma machine for plasma debonding. After plasma debonding, each hole is sliced ​​and analyzed to ultimately determine the etching capability of the plasma machine. This method uses disposable circuit boards that must be discarded after use and cannot be reused. Each test circuit board undergoes a lamination and drilling process, which is time-consuming and costly. Furthermore, each hole must be sliced ​​and analyzed, which is labor-intensive and time-consuming, resulting in very low testing efficiency. Summary of the Invention

[0003] In order to overcome the above problems, the present invention provides a plasma equipment testing method. The technical solution adopted by the present invention to solve the technical problems is as follows:

[0004] A plasma equipment testing method comprises the following steps:

[0005] Step S1: providing a plasma etching resistant test board, and drilling a plurality of test holes of different diameters through the upper and lower surfaces of the test board;

[0006] Step S2: vertically dividing the test board into a first sub-board and a second sub-board along the test hole, wherein the cutting surfaces of the first sub-board and the second sub-board both include semicircular holes;

[0007] Step S3: applying an organic coating on the hole walls of the semicircular holes of the first sub-plate and the second sub-plate;

[0008] Step S4: The first sub-plate and the second sub-plate with the hole walls coated with organic coating are detachably fixed together to form a test plate, and the semicircular holes are correspondingly combined to form test holes;

[0009] Step S5: placing the assembled test board in a plasma device for etching, and taking out the test board after the etching is completed;

[0010] Step S6: split the test board into a first sub-board and a second sub-board, and measure the residual amount of organic coating in the semicircular holes of the first sub-board and / or the second sub-board by a measuring tool to analyze the etching capability of the plasma equipment.

[0011] Furthermore, the test plate is made of stainless steel / ceramic / quartz / glass.

[0012] Furthermore, the thickness of the test plate is 2mm-12mm, and the diameter of the test hole is 0.15mm-5mm.

[0013] Furthermore, in step S2, the cutting surfaces of the first and second sub-plates and the walls of the semicircular holes are finely polished, and the roughness of the cutting surfaces of the first and second sub-plates is RA≤0.8, and the roughness of the walls of the semicircular holes is RA≤0.8.

[0014] Furthermore, the dyne value of the organic coating on the hole wall of the semicircular hole is greater than or equal to 20 and less than or equal to 45.

[0015] Furthermore, in step S4, alignment posts and fixing holes are vertically arranged on the cutting surface of the second sub-plate, and alignment holes and bolt holes passing through the first sub-plate are vertically arranged on the cutting surface of the first sub-plate; the first sub-plate is sleeved on the alignment posts through the alignment holes to be aligned with the second sub-plate, and the fastening bolts are passed through the bolt holes and fastened into the fixing holes to detachably fix the first sub-plate and the second sub-plate.

[0016] Furthermore, in step S6, the distance from the top of the remaining organic coating in the semicircular hole to the top opening of the semicircular hole is measured by a measuring tool and is recorded as a. The distance from the bottom of the remaining organic coating in the semicircular hole to the bottom opening of the semicircular hole is measured by a measuring tool and is recorded as b. The thickness of the test plate is recorded as H, the diameter of the test hole is recorded as d, the aspect ratio of the test hole is H / d, and the deep etching capability of the plasma equipment under the corresponding aspect ratio is (a+b) / H.

[0017] Furthermore, in step S6, a test hole with a minimum aperture d1 of (a+b) / H=1 is measured by a measuring tool, a circuit board with a thickness of H is provided, a hole with an aperture d1 is drilled on the circuit board, the circuit board is placed in a plasma device for etching and then taken out, and the hole with an aperture d1 on the circuit board is sliced ​​and analyzed.

[0018] Furthermore, holes with diameters of d1-0.1 mm, d1-0.05 mm, d1+0.05 mm, and d1+0.1 mm were simultaneously drilled on the circuit board, and these holes were sliced ​​and analyzed after plasma etching.

[0019] Furthermore, in step S6, the distance from the top of the remaining organic coating in the semicircular hole to the top opening of the semicircular hole is measured by a measuring tool and is recorded as a, and the distance from the bottom of the remaining organic coating in the semicircular hole to the bottom opening of the semicircular hole is measured by a measuring tool and is recorded as b. The thickness of the test plate is recorded as H, and the etching uniformity of the plasma equipment is H / (ab)².

[0020] The beneficial effects of the present invention are:

[0021] The present testing method uses a reusable test plate, wherein test holes of different diameters are drilled on the test plate, and the test plate is divided into a first sub-plate and a second sub-plate along the test holes, wherein the cut surfaces of the first sub-plate and the second sub-plate both include semicircular holes, and after coating the hole walls of the semicircular holes with an organic coating, the first sub-plate and the second sub-plate are combined into a complete test plate, and then the test plate is placed in a plasma device for etching. After etching, the test plates are separated, and the residual amount of the organic coating on the hole walls of the first sub-plate and / or the second sub-plate is directly measured using measuring tools such as a metallographic microscope, a 100x microscope, and a 10x microscope to analyze the etching capability of the plasma device. The test plate in the present method is reusable, and the testing cost is low. In addition, the present method can intuitively analyze the etching capability of the plasma device using the measuring tools, and does not require slicing and analyzing each hole, thereby improving testing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, wherein:

[0023] Figure 1 It is a three-dimensional view and a partial magnified view of the test board;

[0024] Figure 2 This is an exploded view of the test board;

[0025] Figure 3 is a perspective view of the first daughter board;

[0026] Figure 4 is a perspective view of the second daughter board;

[0027] Figure 5 This is a schematic diagram for measuring the amount of organic coating remaining in a semicircular hole.

[0028] Figure number mark:

[0029] 100. Test plate; 101. Test hole; 102. First sub-plate; 103. Second sub-plate; 104. Cutting surface; 105. Semicircular hole; 106. Alignment column; 107. Fixing hole; 108. Alignment hole; 109. Bolt hole; 110. Fastening bolt. DETAILED DESCRIPTION

[0030] In order to better understand the purpose, structure and function of the present invention, the specific embodiment of the present invention "a plasma equipment testing method" is further described in detail below with reference to the accompanying drawings.

[0031] The testing method of this embodiment includes the following steps:

[0032] Step S1: See Figure 1 , providing a plasma etching resistant test board 100, drilling a plurality of test holes 101 of different diameters through the upper and lower sides of the test board 100 on the test board 100, preferably, the test holes 101 are distributed in a straight line;

[0033] Step S2: See Figure 2-Figure 4 , vertically dividing the test board 100 into a first sub-board 102 and a second sub-board 103 along the test hole 101 , wherein the cutting surfaces 104 of the first sub-board 102 and the second sub-board 103 both include a semicircular hole 105 ;

[0034] Step S3: applying an organic coating on the hole walls of the semicircular holes 105 of the first sub-plate 102 and the second sub-plate 103;

[0035] Step S4: The first sub-plate 102 and the second sub-plate 103 coated with the organic coating are detachably fixedly spliced ​​together along the cutting surface 104 to form the test plate 100, and the semicircular holes 105 of the first sub-plate 102 and the second sub-plate 103 are correspondingly combined to form the test holes 101;

[0036] Step S5: placing the assembled test board 100 in a plasma device for etching, and taking out the test board 100 after the etching is completed;

[0037] Step S6: Disassemble the test board 100 into a first sub-board 102 and a second sub-board 103, and directly measure the residual amount of organic coating in the semicircular hole 105 of the first sub-board 102 and / or the second sub-board 103 using measuring tools such as a metallographic microscope, a hundred-fold microscope, and a ten-fold microscope, so as to intuitively analyze the etching capability of the plasma equipment through the measurement data of the residual amount of organic coating.

[0038] Using this testing method, the test board 100 can be reused, which greatly saves testing costs. In addition, this method can directly measure the residual amount of organic coating through measuring tools such as metallographic microscopes, 100x microscopes and 10x microscopes to analyze the etching ability of the plasma equipment. There is no need to slice and analyze each hole on the circuit board as before, which improves measurement efficiency.

[0039] Furthermore, in this embodiment, the test board 100 is preferably made of stainless steel / ceramic / quartz / glass material, which is resistant to etching, low in cost, and easy to reuse.

[0040] More specifically, in this embodiment, the thickness of the test board 100 is 2mm-12mm, preferably 8mm; the diameter of the test hole 101 is 0.15mm-5mm, and the test holes 101 of different diameters are arranged on the test board 100, and the hole diameters are arranged in an arithmetic progression of 0.05mm to simulate all possible hole diameters on the circuit board.

[0041] Furthermore, in step S2, the cutting surfaces 104 of the first sub-board 102 and the second sub-board 103 and the hole walls of the semicircular holes 105 are finely polished so that the roughness RA of the cutting surfaces 104 of the first sub-board 102 and the second sub-board 103 is ≤0.8, and the roughness RA of the hole walls of the semicircular holes 105 is ≤0.8. This ensures that when the first sub-board 102 and the second sub-board 103 are merged, the cutting surfaces of the two are seamlessly fitted together, and the semicircular holes 105 can be seamlessly combined into a complete test hole 101, preventing the organic coating on the hole walls from penetrating into the gaps and affecting the accuracy of the test; and the dyne value of the organic coating on the hole walls of the semicircular holes 105 is greater than or equal to 20 and less than or equal to 45, so as to simulate the adhesion of the residual glue on the hole walls of the circuit board.

[0042] See further Figure 2-Figure 4 In step S4, an alignment post 106 and a fixing hole 107 are vertically set on the cutting surface 104 of the second sub-plate 103, and an alignment hole 108 and a bolt hole 109 passing through the first sub-plate 102 are vertically set on the cutting surface 104 of the first sub-plate 102; the first sub-plate 102 is sleeved on the alignment post 106 through the alignment hole 108, and slides along the alignment post 106 to quickly align and combine with the second sub-plate 103, and the fastening bolt 110 is inserted into the bolt hole 109 and fastened into the fixing hole 107 to detachably fix the first sub-plate 102 to the second sub-plate 103, thereby facilitating the disassembly and assembly of the first sub-plate 102 and the second sub-plate 103.

[0043] See further Figure 5In step S6, the distance from the top of the remaining organic coating in the semicircular hole 105 to the top opening of the semicircular hole 105 is measured by a measuring tool and is recorded as a. The distance from the bottom of the remaining organic coating in the semicircular hole 105 to the bottom opening of the semicircular hole 105 is measured by a measuring tool and is recorded as b. The thickness of the test plate 100 is recorded as H, and the diameter of the test hole 101 is recorded as d. The aspect ratio of the test hole 101 is H / d. Under this aspect ratio, the deep etching capability of the plasma equipment is (a+b) / H, (a+b A value of (a+b) / H of 1 indicates that the plasma equipment can completely etch away the residual glue in the hole with a plate thickness of H and a hole diameter of d. A value of (a+b) / H less than 1 indicates that the plasma equipment cannot completely etch away the residual glue in the hole with a plate thickness of H and a hole diameter of d. The smaller the value of (a+b) / H, the worse the deep etching ability of the plasma equipment. As long as the hole d1 with the smallest hole diameter and (a+b) / H equal to 1 is found, the maximum thickness-to-diameter ratio H / d1 that can be etched by the plasma equipment can be obtained.

[0044] More specifically, in some implementations, for circuit boards made of special materials, to improve the accuracy of testing, a measuring tool is used to measure and find a test hole 101 with a minimum aperture diameter d1 where (a+b) / H=1. A circuit board with a thickness of H and made of the special material by lamination is provided. A hole with a diameter of d1 is drilled on the circuit board. The circuit board is placed in a plasma device for etching and then removed. The hole with a diameter of d1 on the circuit board is then sliced ​​and analyzed to determine the deep etching capability of the plasma device for a hole with a diameter of d1 on the circuit board made of this special material. Although the hole slice analysis is still required, the corresponding slice aperture d1 has been selected by the testing method of the present invention, greatly reducing the number of holes that need to be sliced, that is, reducing the impact of material differences on test accuracy, while also improving test efficiency. Furthermore, to make the test more accurate and prevent the impact of errors, holes with diameters of d1-0.1mm, d1-0.05mm, d1+0.05mm, and d1+0.1mm are simultaneously drilled on the circuit board, and sliced ​​and analyzed after plasma etching for each of these holes.

[0045] For more details, see Figure 5In step S6, the distance from the top of the remaining organic coating in the semicircular hole 105 to the top opening of the semicircular hole 105 is measured by a measuring tool and is recorded as a. The distance from the bottom of the remaining organic coating in the semicircular hole 105 to the bottom opening of the semicircular hole 105 is measured by a measuring tool and is recorded as b. The thickness of the test board 100 is recorded as H, and the etching uniformity of the plasma equipment is characterized by H / (ab)²; the smaller the H / (ab)² value, the greater the difference in the etching degree of the plasma equipment on the two sides of the test board 100, and the worse the etching uniformity of the plasma equipment; the larger the H / (ab)² value, the smaller the difference in the etching degree of the plasma equipment on the two sides of the test board 100, and the better the etching uniformity of the plasma equipment; theoretically, when a=b, the above formula is invalid, and the plasma etching uniformity is the best. It should be noted that the previous method of slicing and analyzing after drilling and etching a circuit board typically involves evenly slicing six points along the hole wall. The depth of the etched PP layer (Prepreg) at these six points is measured using a metallographic microscope. The range of these six depth values ​​is then divided by the average to characterize etching uniformity. This method not only complicates slicing and analysis, but also presents a small (micrometer-level) etched PP layer slicing depth, making measurement difficult. Data accuracy is also significantly affected by instrument accuracy and other factors. In contrast, the organic coating used in this method is evenly applied to the hole wall, making measurement of data a and b simple. Both a and b values ​​are relatively large (millimeter-level), and data errors are minimally affected by equipment accuracy. This method is simple, convenient, and highly accurate for testing plasma equipment etching uniformity.

[0046] It will be understood that the present invention is described by way of some embodiments, and it will be appreciated by those skilled in the art that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the teachings of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are intended to be protected by the present invention.

[0047] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In the description of this application, "multiple" is understood to be "at least two". "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A is connected to B, which can mean: A is directly connected to B and A is connected to B through C. In addition, the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

Claims

1. A plasma equipment testing method, characterized in that: The steps include: Step S1: providing a plasma etching resistant test plate (100), and drilling a plurality of test holes (101) with different diameters penetrating the upper and lower surfaces of the test plate (100); Step S2: vertically dividing the test plate (100) along the test hole (101) into a first sub-plate (102) and a second sub-plate (103), wherein the cutting surfaces (104) of the first sub-plate (102) and the second sub-plate (103) both include semicircular holes (105); Step S3: coating the hole walls of the semicircular holes (105) of the first sub-plate (102) and the second sub-plate (103) with an organic coating; Step S4: The first sub-plate (102) and the second sub-plate (103) with the hole walls coated with organic coating are detachably fixedly spliced ​​together to form the test plate (100), and the semicircular holes (105) are correspondingly combined to form the test holes (101); Step S5: placing the assembled test board (100) in a plasma device for etching, and taking out the test board (100) after the etching is completed; Step S6: splitting the test plate (100) into the first sub-plate (102) and the second sub-plate (103), measuring the amount of the organic coating remaining in the semicircular hole (105) of the first sub-plate (102) and / or the second sub-plate (103) by a measuring tool, so as to analyze the etching capability of the plasma device; measuring the distance from the top of the remaining organic coating in the semicircular hole (105) to the top opening of the semicircular hole (105) by the measuring tool as a, and measuring the distance from the bottom of the remaining organic coating in the semicircular hole (105) to the bottom opening of the semicircular hole (105) by the measuring tool as b, the thickness of the test plate (100) is recorded as H, the diameter of the test hole (101) is recorded as d, the aspect ratio of the test hole (101) is H / d, and the deep etching capability of the plasma device under the corresponding aspect ratio is (a+b) / H.

2. A plasma equipment testing method according to claim 1, characterized in that: The test plate (100) is made of stainless steel / ceramic / quartz / glass.

3. A plasma equipment testing method according to claim 2, characterized in that: The thickness of the test plate (100) is 2 mm to 12 mm, and the diameter of the test hole (101) is 0.15 mm to 5 mm.

4. A plasma equipment testing method according to claim 1, characterized in that: In step S2, the cutting surfaces (104) of the first sub-plate (102) and the second sub-plate (103) and the hole walls of the semicircular hole (105) are finely polished, and the roughness of the cutting surfaces (104) of the first sub-plate (102) and the second sub-plate (103) is RA≤0.8, and the roughness of the hole walls of the semicircular hole (105) is RA≤0.

8.

5. A plasma equipment testing method according to claim 4, characterized in that: The dyne value of the organic coating on the hole wall of the semicircular hole (105) is greater than or equal to 20 and less than or equal to 45.

6. A plasma equipment testing method according to claim 5, characterized in that: In step S4, an alignment column (106) and a fixing hole (107) are vertically arranged on the cutting surface (104) of the second sub-plate (103), and an alignment hole (108) and a bolt hole (109) passing through the first sub-plate (102) are vertically arranged on the cutting surface (104) of the first sub-plate (102); the first sub-plate (102) is sleeved on the alignment column (106) through the alignment hole (108) to be aligned with the second sub-plate (103), and a fastening bolt (110) is passed through the bolt hole (109) and fastened into the fixing hole (107) to detachably fix the first sub-plate (102) and the second sub-plate (103).

7. A plasma equipment testing method according to claim 1, characterized in that: In step S6, the test hole (101) with the minimum aperture d1 of (a+b) / H=1 is measured by the measuring tool, a circuit board with a thickness of H is provided, a hole with an aperture d1 is drilled on the circuit board, the circuit board is placed in a plasma device for etching and then taken out, and the hole with an aperture d1 on the circuit board is sliced ​​and analyzed.

8. A plasma equipment testing method according to claim 7, characterized in that: Holes with diameters of d1-0.1mm, d1-0.05mm, d1+0.05mm, and d1+0.1mm are simultaneously drilled on the circuit board, and these holes are sliced ​​and analyzed after plasma etching.

9. A plasma equipment testing method according to any one of claims 1 to 6, characterized in that: In step S6, the distance from the top of the remaining organic coating in the semicircular hole (105) to the top opening of the semicircular hole (105) is measured by the measuring tool and is recorded as a, and the distance from the bottom of the remaining organic coating in the semicircular hole (105) to the bottom opening of the semicircular hole (105) is measured by the measuring tool and is recorded as b. The thickness of the test plate (100) is recorded as H, and the etching uniformity of the plasma equipment is H / (ab)².

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