Capacitance compensation type three-dimensional compact power divider based on HTCC

Abstract

The invention provides an HTCC-based capacitance compensation type three-dimensional compact power divider, which is characterized in that an input end and an output end are in a microstrip line tap feed mode, but when 1 / 4 wavelength impedance matching is carried out, through quasi-coaxial transmission and strip line transmission, the longitudinal distance is increased through quasi-coaxial transmission, and the width of a transmission line is reduced through strip line transmission, so that the transverse size is reduced; the chip capacitors are additionally arranged at the two ends of the output radio frequency, the chip capacitors are connected to radio frequency signals through the metal blocks, impedance matching of the signals is carried out by changing the capacitance values of the chip capacitors, phase compensation is carried out at the same time, and phase control is more accurate. The chip capacitor is welded between the metal block and the radio-frequency signal, impedance matching and phase compensation are achieved, the welding difficulty is lower than that of gold wire welding, the welding area is large, the connectivity with the radio-frequency signal is guaranteed, the possibility of pseudo soldering is reduced, the requirement of the device for air tightness is lowered, meanwhile, the capacitance value of the chip capacitor is conveniently replaced, and the cost is reduced. Impedance matching and phase compensation are realized.

Description

Technical Field

[0001] The present invention belongs to the field of radio frequency and microwave circuits, and particularly relates to a capacitance-compensated three-dimensional compact power divider based on HTCC. Background Art

[0002] With the continuous upgrading and expansion of communication and radar systems, higher and higher requirements are put forward for power dividers. Especially when entering the high-frequency band, such as the Ku band and higher frequency bands, signal transmission faces many complex and severe challenges. On the one hand, the power divider must ensure accurate and stable signal distribution to ensure good signal quality received by each branch and avoid problems such as signal attenuation and distortion, which is crucial for the accuracy and reliability of communication. On the other hand, in the trend of modern electronic devices pursuing extreme miniaturization and high integration, the size and structural compactness of the power divider become key considerations. Traditional designs often struggle to meet these demanding requirements simultaneously.

[0003] Currently, for the design of traditional passive Wilkinson power dividers, PCB substrates are commonly used, with low design accuracy. Usually, the power dividers in the form of microstrip lines are designed. In terms of size, since the line width of the microstrip line is wider than that of the strip line under the same impedance, and the impedance matching of the 1 / 4 wavelength is also designed through the transverse dimension, the transverse length of the impedance matching section under the PCB substrate is 4.5 mm (0.25λ 0 ). While in the present invention, during the 1 / 4 wavelength impedance matching, through the design of a coaxial-like and strip line transmission structure, the transverse size is reduced by increasing the longitudinal dimension, resulting in an overly large size. At the same time, in the design of traditional passive Wilkinson power dividers, phase compensation and impedance matching optimization are carried out by connecting metal blocks to radio frequency signals with gold wires. However, the length and curvature of the gold wires are difficult to control. Therefore, during phase compensation, the phase accuracy is relatively low. Moreover, it is difficult to detect whether the gold wires are soldered, the soldering difficulty of the gold wire connection is high, and the airtightness requirement for the overall substrate is also high. Summary of the Invention

[0004] To solve the problems existing in the background art, the present invention provides a capacitance compensation type three-dimensional compact power divider based on HTCC, including: a multi-layer stacked ceramic substrate, two patch capacitors, an input metal microstrip line tap, an input signal metal coaxial upper surface pad, and two output metal microstrip line taps provided on the top-layer ceramic substrate, an input metal coaxial lower surface pad and two interlayer metal strip lines provided on the middle-layer ceramic substrate; an input signal metal quasi-coaxial and two output signal metal quasi-coaxials are provided between the top-layer ceramic substrate and the middle-layer ceramic substrate; two interlayer metal pads are provided on each ceramic substrate layer between the top-layer ceramic substrate and the middle-layer ceramic substrate, and on the middle-layer ceramic substrate; the upper end of the input signal metal quasi-coaxial and the input metal microstrip line tap are both welded to the input signal metal coaxial upper surface pad, and the lower end of the input signal metal quasi-coaxial is welded to the input metal coaxial lower surface pad; one end of each of the two interlayer metal strip lines is welded to the input metal coaxial lower surface pad; the other ends of the two interlayer metal strip lines are respectively welded to the two interlayer metal pads on the middle-layer ceramic substrate; the lower ends of the two output signal metal quasi-coaxials are respectively welded to the two interlayer metal pads on the middle-layer ceramic substrate; the upper ends of the two output signal metal quasi-coaxials are respectively welded to the two output metal microstrip line taps; the two output signal metal quasi-coaxials respectively pass through and are welded to the two interlayer metal pads of each ceramic substrate layer between the top-layer ceramic substrate and the middle-layer ceramic substrate in sequence; one end of each of the two patch capacitors is welded to the two output metal microstrip line taps; the other ends of the two patch capacitors are respectively welded to the pads on the top-layer ceramic substrate.

[0005] The present invention has at least the following beneficial effects

[0006] For the capacitance compensation type three-dimensional compact power divider based on HTCC of the present invention, the input and output ends adopt the microstrip line tap feeding method. However, when impedance matching at 1 / 4 wavelength, through quasi-coaxial transmission and strip line transmission, the longitudinal distance is increased through quasi-coaxial transmission, and the width of the transmission line is reduced through strip line transmission to reduce the lateral size; the present invention additionally places patch capacitors at both ends of the output radio frequency, which are connected to the radio frequency signal through metal blocks. By changing the capacitance value of the patch capacitors, impedance matching of the signal is performed and the phase is compensated at the same time, and the phase control is more precise. The present invention realizes impedance matching and phase compensation by welding patch capacitors between the metal blocks and the radio frequency signal. The welding difficulty is lower than that of gold wire welding, and the larger welding area ensures the connectivity with the radio frequency signal, reduces the possibility of false soldering, reduces the requirement of the device for airtightness, and at the same time facilitates the replacement of the capacitance value of the patch capacitors to realize impedance matching and phase compensation. Description of the Drawings

[0007] Figure 1 is a schematic structural diagram of the present invention;

[0008] Figure 2 Top view schematic diagram of the present invention;

[0009] Figure 3 Schematic diagram of the single - section Wilkinson power divider of the present invention;

[0010] Figure 4 Simulation schematic diagram of the present invention. Detailed implementation manners

[0011] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the drawings provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0012] Among them, the drawings are only for illustrative purposes, showing only schematic diagrams, not physical diagrams, and should not be construed as a limitation to the present invention; in order to better illustrate the embodiments of the present invention, some components in the drawings will be omitted, enlarged or reduced, which does not represent the size of the actual product; for those skilled in the art, it is understandable that some well - known structures and their descriptions in the drawings may be omitted.

[0013] In the drawings of the embodiments of the present invention, the same or similar reference numerals correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "front", "rear", etc. indicating the orientation or position relationship, they are based on the orientation or position relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only for illustrative purposes and should not be construed as a limitation to the present invention. For those of ordinary skill in the art, the specific meanings of the above - mentioned terms can be understood according to specific circumstances.

[0014] Please refer to Figure 1 and Figure 2, the present invention provides a capacitance compensation type three-dimensional compact power divider based on HTCC, comprising: a multi-layer stacked ceramic substrate, two chip capacitors 9, an input metal microstrip line tap 10, an input signal metal coaxial upper surface pad 3 and two output metal microstrip line taps 1 disposed on the top layer ceramic substrate, an input metal coaxial lower surface pad 4 and two interlayer metal strip lines 5 disposed on the middle layer ceramic substrate; an input signal metal quasi-coaxial 2 and two output signal metal quasi-coaxials 7 are disposed between the top layer ceramic substrate and the middle layer ceramic substrate; two interlayer metal pads 6 are disposed on each layer of ceramic substrate between the top layer ceramic substrate and the middle layer ceramic substrate, and on the middle layer ceramic substrate; the upper end of the input signal metal quasi-coaxial 2 and the input metal microstrip line tap 10 are both welded to the input signal metal coaxial upper surface pad 3, and the lower end of the input signal metal quasi-coaxial 2 is welded to the input metal coaxial lower surface pad 4; one end of each of the two interlayer metal strip lines 5 is welded to the input metal coaxial lower surface pad 4; the other end of each of the two interlayer metal strip lines 5 is respectively welded to the two interlayer metal pads 6 on the middle layer ceramic substrate; the lower ends of the two output signal metal quasi-coaxials 7 are respectively welded to the two interlayer metal pads 6 on the middle layer ceramic substrate; the upper ends of the two output signal metal quasi-coaxials 7 are respectively welded to the two output metal microstrip line taps 1; the two output signal metal quasi-coaxials 7 respectively pass through and are welded to the two interlayer metal pads 6 of each layer of ceramic substrate between the top layer ceramic substrate and the middle layer ceramic substrate in sequence; one end of each of the two chip capacitors 9 is welded to the two output metal microstrip line taps 1 respectively; the other end of each of the two chip capacitors 9 is respectively welded to the pads on the top layer ceramic substrate.

[0015] Preferably, the transmission path of the radio frequency signal includes the radio frequency signal input through the input metal microstrip line tap 10, and sequentially passes through the input signal metal coaxial upper surface pad 3, the input signal metal quasi-coaxial 2, the input metal coaxial lower surface pad 4, the two interlayer metal strip lines 5, the two interlayer metal pads 6 on the middle layer ceramic substrate and the two output signal metal quasi-coaxials 7 and is transmitted to the two output metal microstrip line taps 1 to output the radio frequency signal; wherein, the transmission path length of the radio frequency signal includes a quarter wavelength of the center frequency of the power divider.

[0016] Preferably, an isolation patch resistor 8 is disposed between the two output metal microstrip line taps 1 on the top layer ceramic substrate, and both ends of the isolation patch resistor 8 are respectively welded to the two output metal microstrip line taps 1.

[0017] Preferably, the isolation patch resistor 8 includes: a chip resistor with a 01005 standard package.

[0018] Preferably, the equivalent impedance of the input metal microstrip line tap 10 is Z 0, the equivalent impedances of the two interlayer metal strip lines 5 and the output signal metal coaxial 7 connected thereto are Z 02 and Z 03 , the equivalent impedances of the two output metal microstrip line taps 1 are Z 2 and Z 3 , where Z 02 =Z 03 , Z 0 =Z 2 =Z 3 , the resistance value R of the isolation patch resistor 8 is R = Z 2 +Z 3 .

[0019] Preferably, the chip capacitor 9 includes: a chip capacitor using a 01005 standard package.

[0020] In the design of the traditional passive Wilkinson power divider in this embodiment, it is usually based on the PCB substrate design and only uses microstrip lines for signal transmission, resulting in too large a size. The present invention is first designed based on the HTCC substrate. The HTCC process has a high design accuracy, and the signal can be transmitted through the coaxial-like structure in the longitudinal direction to increase the distance, thereby reducing the lateral size of the device and realizing the miniaturization of the device. In the traditional passive Wilkinson power divider, when performing impedance matching and phase compensation, gold wires are mostly used to connect metal blocks and radio frequency signals. However, the length and curvature of the gold wires are difficult to control. Therefore, during phase compensation, the phase accuracy is low. And it is difficult to detect whether the gold wires are soldered. The soldering of the gold wire connections is difficult, and the airtightness requirements for the overall substrate are also high. The present invention uses chip capacitors to connect metal blocks and radio frequency signals, which has a lower soldering difficulty and is not prone to virtual soldering. By using chip capacitors to connect metal blocks and radio frequency signals and changing the capacitance value of the chip capacitors, impedance matching and phase compensation are achieved. While ensuring phase consistency, the use of phase control chips such as phase shifter chips and phase-locked loop chips is reduced, and the cost is lowered.

[0021] Please refer to Figure 1 , Figure 1 , which is the schematic diagram designed by the present invention. Port 1 is the input end of the signal power, and the characteristic impedance of its input port is Z 0 . The signal is divided into two parts and transmitted into the branch strip lines. The characteristic impedance of the branch strip lines is Z 02 , Z 03 . And an isolation resistor R is connected between the two branch strip lines. The purpose of the isolation resistor is to reduce the mutual interference of the signals transmitted between the two branches, improve the isolation degree between the output ports, and the electrical length of each branch strip line is 1 / 4 wavelength of the center frequency of the designed power divider. And at the ends of the 1 / 4 wavelength lines of the two branches, a characteristic impedance of Z 0The transmission line is used as the output port to ensure port matching and reduce the loss caused by reflection.

[0022] Since port 2 and port 3 are equally divided, let the corresponding output powers be P 2 , P 3 . Due to the design principle of the Wilkinson power divider, the lengths from the input port to the two output ports are both 1 / 4 wavelength line lengths of its center frequency. Therefore, the voltage values U 2 , U 3 at the two output ports must be equal. From the relationship between output power and port voltage: P = U 2 / z, the following relational expressions can be obtained:

[0023]

[0024] Because of equal division, so p 2 = p 3 . From the above formula, Z 2 = Z 3 . To ensure the matching of port 1, the input impedance Z in2 seen from port 2 and the input impedance Z in3 seen from port 3 are required. The total input impedance of the parallel connection is Z 0 . Therefore, it can be obtained that The resistance value of the isolation resistor can also be determined as R = Z 2 + Z 3 = 2Z 0 .

[0025] Based on this principle, in this embodiment, the original microstrip line transmission method of 1 / 4 wavelength impedance matching is changed to a combination of coaxial-like transmission and strip line transmission. By increasing the longitudinal distance, the transverse size is reduced. And through simulation, it is proved that the miniaturization of the power divider is effectively realized. At the output port, a chip resistor with a 01005 standard package is used to achieve isolation of the output port, and a chip capacitor with a 01005 standard package is used to achieve impedance matching of the port. And by optimizing the capacitance values of the different chip capacitors at the two output ports, the phase of the output port is compensated. Finally, the simulation effect achieved by the present invention is that the port return loss within the frequency band is better than 20 dB, the port standing wave ratio is better than 1.25, the output isolation is better than 17 dB, the phase difference is within ±0.03°, and the overall size is 1.47 mm × 1.55 mm × 1.1 mm.

[0026] The power divider of this embodiment has a specific structure as shown in Figure 2 and Figure 3As shown, each number represents: 1. Output metal microstrip line tap, 2. Input signal metal coaxial, 3. Input signal metal coaxial upper surface pad, 4. Input metal coaxial lower surface pad, 5. Interlayer metal strip line, 6. Interlayer metal pad, 7. Output signal metal coaxial, 8. Isolation chip resistor, 9. Chip capacitor, 10. Input metal microstrip line tap.

[0027] In this embodiment, the RF signal is input through 10. Input metal microstrip line tap, passes through 3. Input signal metal coaxial upper surface pad, 2. Input signal metal coaxial, and 4. Input metal coaxial lower surface pad for longitudinal RF signal transmission. By increasing the routing distance of the longitudinal RF signal, when the total length of 1 / 4 wavelength is fixed, the lateral size of the device is reduced. Then, the lateral signal transmission is carried out through 5. Interlayer metal strip line. After transmission, the signal is transmitted to the microstrip line surface through 6. Interlayer metal pads at both ends and 7. Output signal metal coaxial. Then, through 1. Output metal microstrip line tap, the RF signal is output. At the same time, 8. Isolation chip resistor plays an isolation role at both ends of the output signal, and 9. Chip capacitor plays an impedance matching and phase compensation role for the output signal.

[0028] Experimental simulation

[0029] Please refer to Figure 4 , Figure 4 This is the port echo loss, port insertion loss, port standing wave ratio, and port phase value obtained by simulating the ports of the power divider proposed in this invention in HFSS software for this embodiment. It can be seen from Figure 4 that for the power divider proposed in this invention, the port echo in the frequency band is ≥20 dB, the insertion loss is ≤3.3 dB, the port standing wave ratio is ≤1.25, and the output port isolation is ≥17 dB. The power divider proposed in this invention has a good one-to-two function.

[0030] In summary, the capacitance compensation type three-dimensional compact power divider based on HTCC of this invention has microstrip line tap feeding at the input and output ends. However, when impedance matching at 1 / 4 wavelength, through coaxial-like transmission and strip line transmission, the longitudinal distance is increased through coaxial-like transmission, and the transmission line width is reduced through strip line transmission to reduce the lateral size. This invention additionally places chip capacitors at both ends of the output RF, connects them to the RF signal through metal blocks, and by changing the capacitance value of the chip capacitors, impedance matching of the signal is carried out while compensating the phase, and the phase control is more precise. This invention realizes impedance matching and phase compensation by soldering chip capacitors between the metal blocks and the RF signal. The soldering difficulty is lower than that of gold wire soldering, and the larger soldering area ensures the connectivity with the RF signal, reduces the possibility of false soldering, reduces the requirement of the device for airtightness, and at the same time facilitates the replacement of the capacitance value of the chip capacitor to realize impedance matching and phase compensation.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the purpose and scope of the present technical solution, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A capacitive compensation type three-dimensional compact power divider based on HTCC, characterized in that: include: A multi-layered ceramic substrate, two chip capacitors (9), an input metal microstrip line tap (10), an input signal metal coaxial upper surface pad (3) and two output metal microstrip line taps (1) arranged on a top ceramic substrate, an input metal coaxial lower surface pad (4) and two interlayer metal strip lines (5) arranged on a middle ceramic substrate; an input signal metal coaxial (2) and two output signal metal coaxials (7) are arranged between the top ceramic substrate and the middle ceramic substrate; two interlayer metal pads (6) are arranged on each ceramic substrate between the top ceramic substrate and the middle ceramic substrate, and on the middle ceramic substrate; the upper end of the input signal metal coaxial (2) and the input metal microstrip line tap (10) are both welded to the input signal metal coaxial upper surface pad (3), and the lower end of the input signal metal coaxial (2) is welded to the input metal coaxial lower surface pad (4). The invention relates to a method for manufacturing a semiconductor device for manufacturing a semiconductor device for manufacturing a semiconductor device for manufacturing a semiconductor device. The method comprises welding pads (4) for welding two interlayer metal strip lines (5); one end of each of the two interlayer metal strip lines (5) is welded to the lower surface welding pad (4) of the input metal coaxial line; the other ends of the two interlayer metal strip lines (5) are respectively welded to two interlayer metal welding pads (6) on the middle layer ceramic substrate; the lower ends of the two output signal metal coaxial lines (7) are respectively welded to the two interlayer metal welding pads (6) on the middle layer ceramic substrate; the upper ends of the two output signal metal coaxial lines (7) are respectively welded to two output metal microstrip line taps (1); the two output signal metal coaxial lines (7) respectively penetrate the two interlayer metal welding pads (6) of each ceramic substrate between the top layer ceramic substrate and the middle layer ceramic substrate in sequence and are welded thereto; one end of each of the two chip capacitors (9) is respectively welded to the two output metal microstrip line taps (1); and the other ends of the two chip capacitors (9) are respectively welded to the welding pads on the top layer ceramic substrate.

2. The HTCC-based capacitance-compensated three-dimensional compact power divider according to claim 1, characterized in that: The transmission path of the radio frequency signal includes the radio frequency signal being input through an input metal microstrip line tap (10), and being transmitted in sequence through an input signal metal coaxial upper surface pad (3), an input signal metal coaxial (2), an input metal coaxial lower surface pad (4), two interlayer metal strip lines (5), two interlayer metal pads (6) on an intermediate layer ceramic substrate, and two output signal metal coaxials (7) to two output metal microstrip line taps (1) to output the radio frequency signal; wherein the transmission path length of the radio frequency signal includes 1 / 4 wavelength of the center frequency of the power divider.

3. The HTCC-based capacitance-compensated three-dimensional compact power divider according to claim 1, characterized in that: An isolation chip resistor (8) is arranged between the two output metal microstrip line taps (1) on the top ceramic substrate, and two ends of the isolation chip resistor (8) are respectively welded to the two output metal microstrip line taps (1).

4. The HTCC-based capacitance-compensated three-dimensional compact power divider according to claim 3, characterized in that: The isolation chip resistor (8) comprises: a chip resistor in a 01005 standard package.

5. The HTCC-based capacitance-compensated three-dimensional compact power divider according to claim 3, characterized in that: The equivalent impedance of the input metal microstrip line tap (10) is Z0, and the equivalent impedances of the two interlayer metal strip lines (5) and the output signal metal coaxial lines (7) connected thereto are Z 02 and Z 03 The equivalent impedances of the two output metal microstrip line taps (1) are Z2 and Z3, respectively, where Z 02 =Z 03 , Z0=Z2=Z3, the resistance value of the isolation chip resistor (8) is R=Z2+Z3.

6. The HTCC-based capacitance-compensated three-dimensional compact power divider according to claim 1, characterized in that: The chip capacitor (9) includes a chip capacitor using a 01005 standard package.

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