A reconfigurable logic gate circuit

Abstract

The present invention provides a reconfigurable logic gate circuit comprising at least two voltage-regulating devices comprising a two-dimensional magnetic material, a gate, a control electrode electrically connected to the two-dimensional magnetic material, and a Hall electrode. The gate is electrically connected to the two-dimensional magnetic material via an ionic liquid. Two adjacent voltage-regulating devices are electrically connected via the Hall electrode. Applying a voltage to the gate causes ions in the ionic liquid to migrate, generating an electric field at the interface between the two-dimensional magnetic material and the ionic liquid, thereby adjusting the carrier position and spin polarization within the two-dimensional magnetic material. Applying a drive current to the control electrode causes the polarity of the Hall signal generated by the two-dimensional magnetic material to change with the direction of the drive current. This invention can address the problems of high power consumption, limited integration, and rigid functionality inherent in traditional silicon-based logic gate circuits.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reconfigurable logic gate circuit. Background Art

[0002] Traditional silicon-based logic gates rely on complex transistor combinations to implement Boolean logic functions, resulting in high power consumption, limited integration, and rigid functionality. In recent years, two-dimensional magnetic materials, with their atomically thin structure, strong spin-orbit coupling, and electric-field-tunable ferromagnetic properties, have provided new avenues for the development of novel logic devices. For example, Fe3GaTe2, a novel van der Waals ferromagnetic material, exhibits a high Curie temperature and a significant anomalous Hall effect at room temperature, and its electrical transport properties can be dynamically manipulated using external electric fields or currents. However, existing research has primarily focused on implementing a single logic function, lacking exploration of the reconfigurability of multiple logic functions. Furthermore, these efforts rely on cascading multiple devices or complex external circuit designs, hindering improvements in integration and energy efficiency. Furthermore, conventional gate control technologies (such as solid-state dielectric gates) are limited by hysteresis and slow response speed, making them inadequate for dynamic logic reconfiguration. Therefore, there is an urgent need for a monolithically integrated logic device based on two-dimensional magnetic materials that can achieve in-situ switching of multiple logic functions through simple input signal combinations and is compatible with high-density integrated circuit processes. Summary of the Invention

[0003] The present invention provides a reconfigurable logic gate circuit for solving the problems of high power consumption, limited integration and rigid functions in traditional silicon-based logic gate circuits.

[0004] According to one aspect of the present invention, a reconfigurable logic gate circuit is provided, comprising: at least two voltage control devices; the voltage control devices comprising a two-dimensional magnetic material, a gate, a control terminal electrode electrically connected to the two-dimensional magnetic material, and a Hall electrode; the gate being electrically connected to the two-dimensional magnetic material via an ionic liquid; and two adjacent voltage control devices being electrically connected via the Hall electrode.

[0005] A voltage is applied to the gate to move the ions in the ionic liquid, generating an electric field at the cross section between the two-dimensional magnetic material and the ionic liquid, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; a driving current is applied to the control end electrode to change the polarity of the Hall signal generated by the two-dimensional magnetic material with the direction of the driving current.

[0006] Optionally, the logic gate circuit includes two voltage control devices, namely a first voltage control device and a second voltage control device; the first voltage control device and the second voltage control device each include two control terminal electrodes and two Hall electrodes;

[0007] The first Hall electrode of the first voltage regulating device is electrically connected to the first Hall electrode of the second voltage regulating device; the second Hall electrode of the first voltage regulating device serves as an output terminal to output a Hall voltage, and the second Hall electrode of the second voltage regulating device is grounded;

[0008] The first control terminal electrode of the first voltage regulating device inputs a first current, and the second control terminal electrode is grounded; the first control terminal electrode of the second voltage regulating device inputs a second current, and the second control terminal electrode is grounded.

[0009] Optionally, the magnitude and direction of the input voltage of the gate of the first voltage regulating device, the input voltage of the gate of the second voltage regulating device, the first current, and the second current are adjustable.

[0010] Optionally, the reconfigurable logic gate circuit includes an AND gate, an OR gate, a NAND gate, a NOR gate and an XOR gate.

[0011] Optionally, the logic gate circuit includes at least three voltage control devices; each of the voltage control devices includes two control terminal electrodes and two Hall electrodes;

[0012] At least three of the voltage control devices are electrically connected in sequence through the Hall electrodes;

[0013] The vacant Hall electrode of the voltage regulating device at the head end is the output end, and the vacant Hall electrode of the voltage regulating device at the tail end is grounded;

[0014] Different currents are input into the first control terminal electrodes of the voltage regulating devices, and the second control terminal electrodes are all grounded.

[0015] Optionally, the two-dimensional magnetic material is one of Fe3GaTe2, Fe4GeTe2, TMDCs, CrI3, MnPS3, NiPS3, VSe2, CrSBr and CrTe3.

[0016] Optionally, the gate electrode, the control terminal electrode and the Hall electrode are all made of one of platinum, titanium, silver, copper, gold and aluminum.

[0017] Optionally, the ionic liquid is one of 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-ethyl-3-methylimidazolium bromide, N-methyl-N-propylpiperidinium bistrifluoromethanesulfonyl imide ionic liquid, lithium bistrifluoromethanesulfonyl imide and 1-ethyl-3-methylimidazolium bistrifluoromethanesulfonyl imide.

[0018] Optionally, the voltage applied to the gate is in the range of greater than or equal to -4V and less than or equal to 4V.

[0019] Optionally, the current applied to the control terminal electrode is in the range of greater than or equal to -2 μA and less than or equal to 2 μA.

[0020] The technical solution of the embodiment of the present invention applies voltage to the gate, so that the anions and cations in the ionic liquid move toward the positive and negative poles respectively under the action of the electric field, generating a strong electric field at the cross-section of the two-dimensional magnetic material and the ionic liquid, and even a chemical reaction, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; by applying a forward or reverse driving current to the control end electrode, the change in the direction of the current can change the lateral deflection direction of the spin-polarized carriers in the two-dimensional magnetic material, and the polarity of the anomalous Hall effect at both ends of the two-dimensional magnetic material can be controlled through the action of the Lorentz force, thereby realizing the functions of various logic gate circuits.

[0021] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 is a structural diagram of a reconfigurable logic gate circuit provided according to an embodiment of the present invention;

[0024] Figure 2 A logic function diagram of different logic gates implemented by a reconfigurable logic gate circuit in one embodiment of the present invention;

[0025] FIG3( a ) is a circuit structure diagram of a reconfigurable logic gate according to an embodiment of the present invention;

[0026] FIG3 (b) is a timing diagram of input A, input B, and output when the reconfigurable logic gate circuit is the circuit structure shown in FIG3 (a);

[0027] FIG3( c ) is another circuit structure diagram of a reconfigurable logic gate in one embodiment of the present invention;

[0028] FIG3 (d) is a timing diagram of input A, input B, and output when the reconfigurable logic gate circuit is the circuit structure shown in FIG3 (c);

[0029] FIG3( e ) is a third circuit structure diagram of a reconfigurable logic gate according to an embodiment of the present invention;

[0030] FIG3( f ) is a timing diagram of input A, input B, and output when the reconfigurable logic gate circuit has the circuit structure shown in FIG3( e );

[0031] Figure 4 A schematic diagram showing a comparison between the number of devices used and power consumption of a reconfigurable logic gate circuit and a silicon-based logic gate circuit in one embodiment of the present invention;

[0032] Figure 5 FIG. 1 is a schematic structural diagram of a reconfigurable logic gate circuit in another embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0034] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] Example 1

[0036] Figure 1 A reconfigurable logic gate circuit is provided for the first embodiment of the present invention. Figure 1 As shown, the logic gate circuit includes: at least two voltage control devices; the voltage control devices include a two-dimensional magnetic material, a gate, a control terminal electrode electrically connected to the two-dimensional magnetic material, and a Hall electrode; the gate is electrically connected to the two-dimensional magnetic material through an ionic liquid; two adjacent voltage control devices are electrically connected through the Hall electrode;

[0037] A voltage is applied to the gate to move the ions in the ionic liquid, generating an electric field at the cross section between the two-dimensional magnetic material and the ionic liquid, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; a driving current is applied to the control end electrode to change the polarity of the Hall signal generated by the two-dimensional magnetic material with the direction of the driving current.

[0038] Among them, the voltage control device is a device controlled by a voltage signal. When the voltage signal changes, the Hall signals at both ends of the voltage control device will also change.

[0039] Specifically, the voltage control device may include a two-dimensional magnetic material, a gate, a control terminal electrode electrically connected to the two-dimensional magnetic material, and a Hall electrode; the gate is electrically connected to the two-dimensional magnetic material through an ionic liquid. Figure 1 A structural diagram of a reconfigurable logic gate circuit is shown in FIG. Figure 1 The two-dimensional magnetic material in the ionic liquid is covered and not fully displayed. Figure 1 In the process, the ionic liquid is located between the gate and the two-dimensional magnetic material, acting as a conductive medium; Figure 1 Each voltage control device includes a control end electrode and a Hall electrode electrically connected to the two-dimensional magnetic material. The control end electrode of the voltage control device can be connected to the current signal, the Hall electrode serves as the output signal, and the gate can be connected to the voltage signal.

[0040] Among them, the gate is used to access the voltage signal, and the ionic liquid can be used as a conductive medium to connect the gate and the two-dimensional magnetic material respectively. When the gate is connected to the voltage signal, an electric field is generated in the ionic liquid, causing the anions and cations in the ionic liquid to move toward the positive and negative poles under the action of the electric field, forming a strong electric field at the interface between the two-dimensional magnetic material and the liquid, and even electrochemical reactions, thereby adjusting the internal carriers and spin polarization of the material, and then generating Hall signals at both ends of the two-dimensional magnetic material.

[0041] In this embodiment, a logic gate circuit includes at least two voltage-regulating devices, each of which is electrically connected via a Hall electrode. Each voltage-regulating device includes a control terminal electrode, each of which receives a current control signal. The directions of at least two current control signals can change, and when the direction of at least one current control signal changes, the lateral deflection direction of spin-polarized carriers in the two-dimensional magnetic material also changes, thereby achieving controllable polarity of the Hall signal generated at both ends of the two-dimensional magnetic material through the action of the Lorentz force. Furthermore, the Hall electrodes can serve as output signal ports, outputting Hall voltage signals. Thus, the control signals input by the at least two control terminal electrodes and the output of the at least one Hall electrode constitute a logic gate circuit.

[0042] The technical solution of the embodiment of the present invention applies voltage to the gate, so that the anions and cations in the ionic liquid move toward the positive and negative poles respectively under the action of the electric field, generating a strong electric field at the cross-section of the two-dimensional magnetic material and the ionic liquid, and even a chemical reaction, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; by applying a forward or reverse driving current to the control end electrode, the change in the direction of the current can change the lateral deflection direction of the spin-polarized carriers in the two-dimensional magnetic material, and the polarity of the anomalous Hall effect at both ends of the two-dimensional magnetic material can be controlled through the action of the Lorentz force, thereby realizing the functions of various logic gate circuits.

[0043] In one embodiment, the logic gate circuit includes two voltage control devices, namely a first voltage control device and a second voltage control device; the first voltage control device and the second voltage control device each include two control terminal electrodes and two Hall electrodes; the first Hall electrode of the first voltage control device is electrically connected to the first Hall electrode of the second voltage control device; the second Hall electrode of the first voltage control device serves as an output terminal to output a Hall voltage, and the second Hall electrode of the second voltage control device is grounded; the first control terminal electrode of the first voltage control device inputs a first current, and the second control terminal electrode is grounded; the first control terminal electrode of the second voltage control device inputs a second current, and the second control terminal electrode is grounded.

[0044] You can refer to Figure 1 A schematic diagram of a reconfigurable logic gate circuit is shown in FIG. Figure 1 The logic gate circuit includes two voltage control devices, namely a first voltage control device and a second voltage control device; the first voltage control device and the second voltage control device each include two control terminal electrodes and two Hall electrodes; the first control terminal electrode of the first voltage control device is connected to the current I1, the first control terminal electrode of the second voltage control device is connected to the current I2, the second control terminal electrode of the first voltage control device is grounded, the second control terminal electrode of the second voltage control device is grounded, and the first Hall electrode is electrically connected to the first Hall electrode of the second voltage control device, that is, Figure 1 The Hall electrode connection structure in the middle includes the first Hall electrode of the first voltage regulating device and the first Hall electrode of the second voltage regulating device; the second Hall electrode of the first voltage regulating device serves as the output end to output the Hall voltage, that is, Figure 1 The Hall electrode on the left side of the middle is used as the output terminal; the second Hall electrode of the second voltage regulating device is grounded, that is, Figure 1 The Hall electrode on the right side is grounded.

[0045] Figure 1In the logic gate circuit composed of two voltage control devices, the input voltage of the gate of the first voltage control device, the input voltage of the gate of the second voltage control device, the first current, and the second current are all adjustable in magnitude and direction.

[0046] When the voltage magnitude and direction of the two gate inputs are fixed, the output of the second Hall electrode of the first voltage control device can change according to the changes in the first control terminal electrode access current I1 and the first control terminal electrode access current I2, thereby realizing the function of the logic gate circuit.

[0047] In a specific application example, Figure 1 The reconfigurable logic gate circuit can form AND gate, OR gate, NAND gate, NOR gate and XOR gate.

[0048] Specifically, the dynamic switching of logic functions can be achieved through the input signal combination matrix as shown in Table 1, where Vg1 and Vg2 are the two voltages input to the gate of the first voltage control device and the second voltage control device, respectively, I1 is the access current of the first control terminal electrode of the first voltage control device, and I2 is the access current of the first control terminal electrode of the second voltage control device.

[0049] Table 1 Input signal combination matrix of reconfigurable logic gate circuit and corresponding logic function table

[0050]

[0051] In Table 1, an input signal combination of "NAND" logic is: Vg1, Vg2 has at least one voltage of -3V, currents I1 and I2 are both positive inputs, and the output voltage V_H ≥ 0.8V, which is represented by a logic "1" mapping; an input signal combination of "NOR" logic is: Vg1, Vg2 are both -3V, currents I1 and I2 are both positive inputs, and the output voltage V_H ≥ 1.2V, which is represented by a logic "1" mapping; an input signal combination of "AND" logic is: Vg1, Vg2 are both +3V, currents I1 and I2 are both negative inputs, and the output voltage V_H ≥ -0.8V, which is represented by a logic "1" mapping; an input signal combination of "OR" logic is: Vg1, Vg2 has at least one voltage value of -3V, currents I1 and I2 are both negative inputs, and the output voltage V_H ≥ -1.2V, which is represented by a logic "1" mapping; an input signal combination of "XOR" logic is: Vg1, One voltage in Vg2 is -3V and the other is +3V, and one current of I1 and I2 is a positive input and the other is a negative input. When the output voltage V_H ≥ 0.3V, it represents a logic "1" mapping.

[0052] In a specific application example, the following Figure 1The structure of the reconfigurable logic gate circuit shown in FIG. 1 realizes the input signal combination matrix of the AND gate, OR gate, NAND gate, NOR gate and XOR gate and the mapping diagram of the corresponding output signal, as shown in FIG. Figure 2 shown. Figure 2 Input A is the gate voltage input of the first voltage regulator, input B is the gate voltage input of the second voltage regulator, I1 is the input current of the first control terminal electrode of the first voltage regulator, and I2 is the input current of the first control terminal electrode of the second voltage regulator. When A and B are "0", the input voltage is +3V; when A and B are "1", the input voltage is -3V. If I1>0 indicates the current is in the forward direction, and I1<0 indicates the current is in the reverse direction. Similarly, if I2>0 indicates the current is in the forward direction, and I2<0 indicates the current is in the reverse direction.

[0053] Specifically, the logic gate circuit and its input and output timing diagram are shown in Figure 3 (a) to Figure 3 (f). Figure 3 (a), Figure 3 (c) and Figure 3 (e) are structural diagrams of the logic gate circuit. The "X" symbol in the control end electrodes of the two voltage control devices in Figure 3 (a), Figure 3 (c) and Figure 3 (e) indicates that the current is a forward input, and the "·" symbol indicates that the current is a reverse input; A is the gate voltage input of the first voltage control device, and B is the gate voltage input of the second voltage control device; one Hall electrode of the second voltage control device is grounded, and the other Hall electrode is electrically connected to the Hall electrode of the first voltage control device, and the other Hall electrode of the first voltage control device serves as the output end.

[0054] The logic gate circuit in Figure 3(a) shows that both input currents of the two voltage control devices are positive. Figure 3(b) includes the voltage timing of input A and the voltage timing of input B. The blue line in the timing diagram of Figure 3(b) represents the timing of the output of the logic gate circuit. The output has been transformed by V_H-V_threshold (for example, V_H-1.2). The red line represents the set threshold. When it is greater than the threshold, it is mapped to a logic "1", and when it is less than the threshold, it is mapped to a logic "0".

[0055] The logic gate circuit in Figure 3(c) shows that the two input currents of the two voltage control devices are both in opposite directions. Figure 3(d) includes the voltage timing of input A and input B. The blue line in the timing diagram of Figure 3(d) represents the timing of the logic gate circuit output. The output has been transformed by V_H-V_threshold (for example, V_H+1.2). The red line represents the set threshold. When it is greater than the threshold, it is mapped to a logic "1", and when it is less than the threshold, it is mapped to a logic "0".

[0056] The logic gate circuit in Figure 3(e) indicates that the input current of the first voltage regulator is in the reverse direction, while the input current of the second voltage regulator is in the forward direction. Figure 3(f) also includes the voltage timing of input A and the voltage timing of input B. In the timing diagram of Figure 3(f), the blue line represents the timing of the output of the logic gate circuit. The output has been transformed by V_H-V_threshold (e.g., V_H-0.3). The red line represents the set threshold. When it is greater than the threshold, it is mapped to a logic "1", and when it is less than the threshold, it is mapped to a logic "0".

[0057] In addition, the comparison of the number of devices and power consumption of the reconfigurable logic gate circuit and the silicon-based logic gate circuit in this embodiment is shown in the figure below. Figure 4 shown. Figure 4 The red stars in the middle represent the number of devices and power consumption of the reconfigurable logic gate circuit of the present invention to realize the gate circuit, the green circles represent the number of devices consumed by the silicon-based logic gate circuit to realize the gate circuit, and the blue circles represent the power consumption of the silicon-based logic gate circuit. It can be seen that the reconfigurable logic gate circuit of the present invention only needs two voltage control devices to realize a two-input logic gate circuit, while the silicon-based logic gate circuit requires 4 MOS tubes to realize a "NAND gate", 4 MOS tubes to realize a "NOR gate", 6 MOS tubes to realize an "AND gate", 6 MOS tubes to realize an "OR gate", and 12 MOS tubes to realize an "XOR gate", that is, the present invention can greatly reduce the use of devices. In addition, the power consumption of the reconfigurable logic gate circuit of the present invention is only 0.03mW, while the power of the silicon-based logic gate circuit is close to 800mW when realizing a "NAND gate" and a "NOR gate", the power to realize an "AND gate" and an "OR gate" is more than 850mW, and the power to realize an "XOR gate" is about 10, which is more than 10 times the power consumption of the reconfigurable logic gate circuit of the present invention. 4 times,

[0058] In one embodiment, the logic gate circuit includes at least three voltage control devices; each of the voltage control devices includes two control terminal electrodes and two Hall electrodes; at least three voltage control devices are electrically connected in sequence through the Hall electrodes; the vacant Hall electrode of the voltage control device at the head end is the output end, and the vacant Hall electrode of the voltage control device at the tail end is grounded; the first control terminal electrode of each voltage control device inputs different currents, and the second control terminal electrodes are all grounded.

[0059] like Figure 5 As shown, Figure 5 It is a three-input logic gate circuit, including three voltage control devices; each voltage control device includes two control terminal electrodes and two Hall electrodes; the three voltage control devices are electrically connected in sequence through the Hall electrodes; it should be noted that, Figure 5 The two-dimensional magnetic material in the ionic liquid is covered and not fully displayed. Figure 5 In this embodiment, the ionic liquid is located between the gate and the two-dimensional magnetic material, acting as a conductive medium. The control electrode input of the first voltage control device is I1, the control electrode input of the second voltage control device is I2, and the control electrode input of the third voltage control device is I3. The unused Hall electrode of the first voltage control device serves as the output terminal, and the unused Hall electrode of the third voltage control device is grounded. Different currents are input to the first control electrode of each voltage control device, and the second control electrode is grounded. This embodiment is merely illustrative; in practice, a multi-input logic gate circuit can be constructed using more voltage control devices.

[0060] In one embodiment, the two-dimensional magnetic material is one of Fe3GaTe2, Fe4GeTe2, TMDCs, CrI3, MnPS3, NiPS3, VSe2, CrSBr and CrTe3.

[0061] In specific applications, Fe3GaTe2, a new van der Waals ferromagnetic material, can be selected. It still has a high Curie temperature and a significant anomalous Hall effect at room temperature, and its electrical transport properties can be dynamically controlled by external electric fields or currents.

[0062] In one embodiment, the gate electrode, the control terminal electrode, and the Hall electrode are all made of one of platinum, titanium, silver, copper, gold, and aluminum.

[0063] Metal electrodes with good electrical conductivity such as platinum, titanium, silver, copper, gold, aluminum, etc. can be used. This embodiment is only an illustrative description, and other metals or alloy materials with good electrical conductivity can also be used.

[0064] In one embodiment, the ionic liquid includes one of 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIM BF4), 1-ethyl-3-methylimidazolium bromide (EMIM Br), N-methyl-N-propylpiperidinium bis(trifluoromethanesulfonyl)imide ionic liquid (PP13TFSI), lithium bis(trifluoromethanesulfonyl)imide (LiTFSI), and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (DEME-TFSI).

[0065] In more specific applications, the ionic liquid gate medium uses a low-viscosity electrolyte such as DEME-TFSI, which can effectively control the charge on the surface of the two-dimensional magnetic material in contact with the ionic liquid within the range of ±4 V, thereby affecting the electrical properties of the two-dimensional magnetic material.

[0066] In one embodiment, the voltage applied to the gate is in the range of greater than or equal to -4V and less than or equal to 4V; the current applied to the control terminal electrode is in the range of greater than or equal to -2μA and less than or equal to 2μA.

[0067] In such Figure 1 In the embodiment of the reconfigurable logic gate circuit shown, the driving current input to the control terminal electrode can be set to ±1 μA.

[0068] The technical solution of the embodiment of the present invention applies a voltage to the gate, causing the anions and cations in the ionic liquid to move toward the positive and negative electrodes respectively under the action of the electric field, generating a strong electric field at the cross section of the two-dimensional magnetic material and the ionic liquid, and even a chemical reaction, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; by applying a positive or reverse driving current to the control end electrode, the change in the direction of the current can change the lateral deflection direction of the spin-polarized carriers in the two-dimensional magnetic material, and the polarity of the anomalous Hall effect at both ends of the two-dimensional magnetic material can be controlled through the action of the Lorentz force, thereby realizing the functions of various logic gate circuits. In actual applications, the room temperature ferromagnetism of Fe3GaTe2 is used to ensure that the device can operate stably without a low temperature environment. In addition, the reconfigurable logic gate circuit of the present invention is also much superior to the existing silicon-based logic gate circuit in terms of the number of devices used and power.

[0069] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A reconfigurable logic gate circuit, characterized in that: include: at least two voltage regulating devices; The voltage control device includes a two-dimensional magnetic material, a gate, a control terminal electrode electrically connected to the two-dimensional magnetic material, and a Hall electrode; The gate is electrically connected to the two-dimensional magnetic material through an ionic liquid; two adjacent voltage control devices are electrically connected through the Hall electrode; Applying a voltage to the gate causes ions in the ionic liquid to move, generating an electric field at the cross section between the two-dimensional magnetic material and the ionic liquid, thereby adjusting the carrier position and spin polarization rate inside the two-dimensional magnetic material; applying a driving current to the control end electrode causes the polarity of the Hall signal generated by the two-dimensional magnetic material to change with the direction of the driving current; When the logic gate circuit includes two voltage control devices, namely a first voltage control device and a second voltage control device; the first voltage control device and the second voltage control device each include two control terminal electrodes and two Hall electrodes; The first Hall electrode of the first voltage regulating device is electrically connected to the first Hall electrode of the second voltage regulating device; the second Hall electrode of the first voltage regulating device serves as an output terminal to output a Hall voltage, and the second Hall electrode of the second voltage regulating device is grounded; The first control terminal electrode of the first voltage regulating device inputs a first current, and the second control terminal electrode is grounded; The first control terminal electrode of the second voltage regulating device inputs a second current, and the second control terminal electrode is grounded.

2. The reconfigurable logic gate circuit according to claim 1, wherein: The magnitude and direction of the input voltage of the gate of the first voltage regulating device, the input voltage of the gate of the second voltage regulating device, the first current, and the second current are all adjustable.

3. The reconfigurable logic gate circuit according to claim 2, wherein: The reconfigurable logic gate circuit includes an AND gate, an OR gate, a NAND gate, a NOR gate and an XOR gate.

4. The reconfigurable logic gate circuit according to claim 1, wherein: The logic gate circuit includes at least three voltage control devices; each of the voltage control devices includes two control terminal electrodes and two Hall electrodes; At least three of the voltage control devices are electrically connected in sequence through the Hall electrodes; The vacant Hall electrode of the voltage regulating device at the head end is the output end, and the vacant Hall electrode of the voltage regulating device at the tail end is grounded; Different currents are input into the first control terminal electrodes of the voltage regulating devices, and the second control terminal electrodes are all grounded.

5. The reconfigurable logic gate circuit according to claim 1, wherein: The two-dimensional magnetic material is one of Fe3GaTe2, Fe4GeTe2, TMDCs, CrI3, MnPS3, NiPS3, VSe2, CrSBr and CrTe3.

6. The reconfigurable logic gate circuit according to claim 1, wherein: The gate electrode, the control terminal electrode and the Hall electrode are all made of one of platinum, titanium, silver, copper, gold and aluminum.

7. The reconfigurable logic gate circuit according to claim 1, wherein: The ionic liquid is one of 1-ethyl-3-methylimidazolium tetrafluoroborate, 1-ethyl-3-methylimidazolium bromide, N-methyl-N-propylpiperidinium bis(trifluoromethanesulfonyl)imide ionic liquid, lithium bis(trifluoromethanesulfonyl)imide and 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide.

8. The reconfigurable logic gate circuit according to claim 1, wherein: The gate voltage is applied in a range of greater than or equal to -4V and less than or equal to 4V.

9. The reconfigurable logic gate circuit according to claim 1, wherein: The current applied to the control terminal electrode is in the range of greater than or equal to -2 μA and less than or equal to 2 μA.

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