Wafer chuck silica gel heating device and wafer high-temperature testing device

Abstract

The invention discloses a wafer chuck silica gel heating device comprising an electric heating plate which is provided with a heating resistance wire and is used for heating the electric heating plate to a preset temperature; the electromagnetic shielding layer is connected with the grounding wire, is arranged on one side, facing the wafer chuck, of the electric heating plate and is used for shielding electromagnetic radiation generated by the heating resistance wire; the first insulating layer is arranged between the electric heating plate and the electromagnetic shielding layer, and the projection of the first insulating layer completely covers the electric heating plate and the electromagnetic shielding layer; the second insulating layer is arranged on one side, facing the wafer chuck, of the electromagnetic shielding layer and is used for isolating the electromagnetic shielding layer from the wafer chuck; the third insulating layer is arranged on the side, away from the wafer chuck, of the electric heating plate, and the projection of the third insulating layer completely covers the electric heating plate. The electromagnetic shielding layer and the first insulating layer are additionally arranged on the basis of an existing silica gel heating sheet of a three-layer structure, the grounding wire led out of the electromagnetic shielding layer is connected with the ground, and the problem of electromagnetic interference generated when current flows in is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer detection, and more specifically, to a wafer chuck silicone heating device and a wafer high-temperature testing device. Background Art

[0002] In the field of wafer detection, in order to meet the test conditions of chips, high-temperature testing is an essential item. Conventional heating methods for high-temperature testing include silicone heating, mica heating, ceramic heating, etc. During the heating process, there are extremely high requirements for the temperature uniformity of the entire disk surface.

[0003] The heating structure in the heating body is usually a ring structure, and conventional silicone heating plates cannot perform electromagnetic shielding. As a result, during the heating process, due to the magnetic field effect of the current, a strong electromagnetic field will be formed around the silicone heating plate, generating a certain amount of electromagnetic radiation, which will lead to inaccurate wafer test results and even burn out the wafer.

[0004] Therefore, it is necessary to design a silicone heating device to solve one of the above technical problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a wafer chuck silicone heating device and a wafer high-temperature testing device, which can solve at least one of the above-mentioned technical problems. The specific solutions are as follows: According to a specific embodiment of the present invention, a first aspect of the present invention discloses a wafer chuck silicone heating device, including: An electric heating plate, on which a heating resistance wire is arranged, for heating the electric heating plate to a preset temperature; An electromagnetic shielding layer, connected to a ground wire, arranged on the side of the electric heating plate facing the wafer chuck, for shielding the electromagnetic radiation generated by the heating resistance wire; A first insulating layer, arranged between the electric heating plate and the electromagnetic shielding layer, and the projection of the first insulating layer completely covers the electric heating plate and the magnetic shielding layer; A second insulating layer, arranged on the side of the electromagnetic shielding layer facing the wafer chuck, and the projection of the second insulating layer completely covers the electromagnetic shielding layer, for isolating the electromagnetic shielding layer from the wafer chuck; A third insulating layer, arranged on the side of the electric heating plate away from the wafer chuck, and the projection of the third insulating layer completely covers the electric heating plate.

[0006] Preferably, the electromagnetic shielding layer is a metal foil or a metal mesh, and the mesh number of the metal mesh is 120.

[0007] Preferably, the electric heating layer includes: a central heating area, arranged at the center of the electric heating layer; An annular heating region, the center of the annular heating region coincides with the center of the central heating region, and the inner diameter of the annular heating region is not less than the radius of the central heating region; The heating resistance wire arranged in the central heating region is connected in series with the heating resistance wire arranged in the annular heating region.

[0008] Preferably, the ratio of the heating power of the annular heating region to the heating power of the central heating region is (3±0.2):(2±0.2).

[0009] Preferably, within the annular heating region, the arrangement of the heating resistance wires is as follows: centered on the center of the central heating region, in the annular region of the annular heating region, it folds back radially and is arranged circumferentially. The extending direction of the heating resistance wire passes through the center, and the number of heating resistance wires arranged circumferentially is an even number.

[0010] Preferably, it further includes: a plurality of degumming holes arranged in the central heating region for discharging residual glue.

[0011] Preferably, the central heating region includes: a first semi-circular region and a second semi-circular region that are symmetrically distributed, and the heating resistance wires in the first semi-circular region and the second semi-circular region are evenly arranged; Among them, the first semi-circular region and / or the second semi-circular region includes: a folding-back region and a wire-arranging region; the folding-back region is a region without heating resistance wires formed with the degumming hole as the center and a preset length as the radius; the wire-arranging region is along the extending direction of the heating resistance wire, located between two adjacent folding-back regions, and the projections of the two folding-back regions in the extending direction of the heating resistance wire overlap. When both of the two degumming holes are located in the first semi-circular region or the second semi-circular region, the wire-arranging region is divided into a first wire-arranging region and a second wire-arranging region, and the heating resistance wires are respectively arranged in a folding-back manner in the first wire-arranging region and the second wire-arranging region for magnetic field cancellation.

[0012] Preferably, when the two degumming holes are respectively located in the first semi-circular region and the second semi-circular region, the arrangement of the heating resistance wires is as follows: Along the extending direction of the heating resistance wire, perpendicular to the symmetric center of the first semi-circular region and the first semi-circular region, enter the second semi-circular region from the first semi-circular region, fold back at the folding-back region in the second semi-circular region, enter the first semi-circular region again, and reciprocally fold back between the folding-back regions of the two adjacent degumming holes until the heating resistance wire leaves the wire-arranging region; When the heating resistance wire leaves the wire arrangement area but is within the boundary of the folding-back area on the second semi-circular area, the heating resistance wire folds back within the second semi-circular area between the folding-back area and the symmetry center until it leaves the boundary of the folding-back area and re-enters the first semi-circular area.

[0013] Preferably, the diameter of the heating resistance wire is 2.0 ± 0.1 mm.

[0014] According to the specific embodiments disclosed by the present invention, a second aspect of the present invention discloses a wafer high-temperature testing device, including the above-mentioned wafer chuck silicone heating device.

[0015] The above-mentioned solutions of the disclosed embodiments of the present invention, compared with the prior art, have at least the following beneficial effects: Based on the existing three-layer silicone heating device, the present invention adds an electromagnetic shielding layer and an insulating layer. By connecting the grounding wire led out from the electromagnetic shielding layer to the ground, the problem of electromagnetic interference generated by the heating resistance wire on the electric heating plate when current is introduced is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with the disclosed embodiments of the present invention, and are used together with the specification to explain the principles of the disclosed embodiments of the present invention. Obviously, the accompanying drawings in the following description are only some embodiments of the disclosed embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. In the drawings: Figure 1 is a schematic structural diagram of a wafer chuck silicone heating device provided by an embodiment of the present invention; Figure 2 is a schematic diagram of the uniform distribution of the heating resistance wires of a 12-inch electric heating plate provided by an embodiment of the present invention; Figure 3 is a schematic diagram of the arrangement of the heating resistance wires of a 12-inch electric heating plate provided by another embodiment of the present invention; Figure 4 is a schematic diagram of the arrangement of the heating resistance wires of an 8-inch electric heating plate provided by an embodiment of the present invention; Figure 5 is a schematic diagram of the arrangement of the heating resistance wires when multiple degumming holes in the implementation of the present invention are located in different areas; Figure 6 is a schematic diagram of the arrangement of the heating resistance wires when the degumming hole in the implementation of the present invention is located in the annular heating area; Figure 7 is the detection result of the temperature uniformity provided by an embodiment of the present invention; Figure 8 is the detection result of the electromagnetic radiation provided by an embodiment of the present invention.

[0017] Reference numerals: 10: First insulating layer, 20: Electromagnetic shielding layer, 30: Second insulating layer, 40: Electric heating plate, 50: Third insulating layer, 401: Central heating area, 402: Annular heating area. Detailed implementation manners

[0018] In order to make the purpose, technical solutions and advantages of the disclosure of the present invention clearer, the following will further describe in detail a wafer chuck silicone heating device and a wafer high-temperature testing device disclosed in the present invention with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments disclosed in the present invention, rather than all the embodiments. Based on the embodiments disclosed in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present invention.

[0019] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "the" and "said" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. "Plural" generally includes at least two.

[0020] It should be understood that the term "and / or" used in the present invention is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally represents an "or" relationship between the associated objects before and after.

[0021] It should be understood that although the terms first, second, third, etc. may be used in the embodiments of the present application, these should not be limited to these terms. These terms are only used to distinguish. For example, without departing from the scope of the embodiments of the present application, the first can also be called the second, and similarly, the second can also be called the first.

[0022] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a commodity or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such commodity or device. Without further limitation, an element defined by the statement "including one" does not exclude the existence of another identical element in the commodity or device including the said element.

[0023] The silicone heating plate is a heating device made of silicone as the base material. Its main function is to convert electrical energy into heat energy by transmitting electrical energy, so as to increase the surface temperature of the heating plate and achieve the purpose of heating. The silicone heating plate is mainly composed of a nickel-chromium alloy heating resistance wire and a high-temperature insulating cloth. The high-temperature insulating cloth can effectively isolate the electric heating element from the external environment, prevent current leakage or short-circuit phenomena, and ensure the safe operation of the heating plate.

[0024] The wafer chuck, also known as the chuck plate, is a device that can fix the wafer and ensure that the wafer can be stably placed on the detection equipment. Common sizes are 200mm (8 inches), 250mm (10 inches), and 300mm (12 inches).

[0025] The silicone heating device of the wafer chuck of the present invention is bonded to the side of the wafer chuck facing away from the wafer. When using a heating device with the resistance wire arranged in a circular form to heat the wafer chuck, the larger the size of the wafer chuck, the worse the temperature uniformity. And during the heating process, due to the magnetic field effect of the current, a strong electromagnetic field will be formed around the silicone heating plate, generating a certain amount of electromagnetic radiation.

[0026] Therefore, the first embodiment of the present invention provides a silicone heating device for a wafer chuck, as Figure 1 shown, including: An electric heating plate, on which a heating resistance wire is arranged, for heating the electric heating plate to a preset temperature; An electromagnetic shielding layer, connected to the ground wire, arranged on the side of the electric heating plate facing the wafer chuck, for shielding the electromagnetic radiation generated by the heating resistance wire; A first insulating layer, arranged between the electric heating plate and the electromagnetic shielding layer, and the projection of the first insulating layer completely covers the electric heating plate and the magnetic shielding layer; A second insulating layer, arranged on the side of the electromagnetic shielding layer facing the wafer chuck, and the projection of the second insulating layer completely covers the electromagnetic shielding layer, for isolating the electromagnetic shielding layer from the wafer chuck; A third insulating layer, arranged on the side of the electric heating plate away from the wafer chuck, and the projection of the third insulating layer completely covers the electric heating plate. For isolating the electric heating plate 40 from the metal on the machine equipment.

[0027] The sizes and areas of the first insulating layer, the second insulating layer, the third insulating layer, the electromagnetic shielding layer and the electric heating plate are approximately equal and match the size of the wafer chuck.

[0028] Preferably, the materials of the first insulating layer 30, the second insulating layer 10 and the third insulating layer 50 are fiberglass cloth.

[0029] Preferably, the electromagnetic shielding layer 20 is a metal foil or a metal mesh.

[0030] As a metal shielding layer, the copper foil can fully shield the electromagnetic interference generated during the heating process of the electric heating plate, preventing inaccurate testing of the wafers on the upper surface of the wafer chuck due to electromagnetic field interference. However, when choosing copper foil as the electromagnetic shielding layer, due to its overly smooth surface, it adheres firmly to the upper and lower insulating layers. And as the temperature of the electric heating plate increases, bulging will occur. Therefore, in the embodiment of the present invention, a copper mesh is selected as the electromagnetic shielding layer. To avoid a decrease in shielding effect caused by too large a grid spacing, a 120-mesh copper mesh is chosen.

[0031] Preferably, to avoid the problem of multi-layer cracking, the first insulating layer 30, the electromagnetic shielding layer 20, the second insulating layer 10, the electric heating plate 40, and the third insulating layer 50 are bonded together with glue, and then pressed by a machine after bonding to strengthen the connection strength between layers.

[0032] In this embodiment, since the silicone heating device of the present invention needs to be pasted to the back of the wafer chuck with glue, several additional glue discharge holes A1, A2, etc. are added, as Figure 2 shown, to prevent bulging caused by excessive bubbles during the later pasting process.

[0033] Figure 2 It is a schematic diagram when the heating resistance wires of the 12-inch electric heating plate in an embodiment of the present invention are evenly distributed at a spacing of 10 mm in a form that bypasses the glue discharge holes and assembly holes.

[0034] Since the hole positions of the glue discharge holes A are not symmetric or arranged in a certain pattern, in this embodiment, the heating resistance wires are arranged in a uniformly distributed manner in the upper and lower two parts to ensure uniform heating. At the same time, the heating resistance wires in each part are arranged in a form of folding symmetry, so that the current directions in every two adjacent heating resistance wires are opposite, thereby achieving the cancellation of most of the magnetic fields.

[0035] However, since there is still radiative and convective heat dissipation during the heat conduction process of the wafer chuck, when the silicone heating device of the wafer chuck is pasted to the wafer chuck, by measuring the temperature on the front surface of the wafer chuck, it can be found that under the condition of the same time, the temperature at the center of the wafer chuck is about 3 °C higher than the temperature at the edge.

[0036] Through simulation analysis, it is found that the heat dissipation shows a gradient structure. For every 100 mm increase in the diameter of the wafer chuck, the temperature at the position of the wafer chuck away from the center of the circle will decrease by about 1 °C. At the same time, since the heating resistance wire belongs to a resistive material, a strong electromagnetic field is formed around it when there is current passing through.

[0037] Therefore, in a preferred embodiment of the present invention, in Figure 2Based on the shown distribution, by changing the arrangement mode of the heating resistance wires on the electric heating plate, the wafer chuck after the convective heat dissipation and radiation processes can meet the requirements for temperature uniformity during wafer testing, and at the same time, the influence of electromagnetic radiation on wafer testing is avoided.

[0038] Specifically, aiming at the problem that the heat dissipation shows a gradient structure, the present invention adjusts the spacing of the heating resistance wires by adopting a regional layout method, making the heating resistance wires in the central area with a high temperature sparsely distributed and the heating resistance wires in the outer ring area with a low temperature densely distributed, so that the temperature is evenly distributed overall.

[0039] As Figure 3 Or as shown in FIG. 4, the electric heating plate is divided into a central heating area 401 and an annular heating area 402. The center of the central heating area 401 coincides with the center of the annular heating area 402, and the radius of the central heating area 401 is smaller than the inner diameter of the annular heating area. In this embodiment, a single-channel control method is adopted to control the heating resistance wires connected in series in the central heating area 401 and the annular heating area 402.

[0040] Furthermore, a distribution mode in which the heating resistance wires in the central heating area 401 are sparse and the heating resistance wires in the annular heating area 402 are dense is adopted, so that the heating power in the central heating area 401 is less than the heating power in the annular heating area 402, thereby ensuring that the annular heating area 402 can effectively compensate for the temperature loss caused by air convection heat dissipation, etc.

[0041] Preferably, when the ratio of the heating power of the annular heating area 402 to the heating power of the central heating area 401 is 3:2, the compensation effect is the best.

[0042] In this embodiment, heating resistance wires with a core diameter of 2.5 mm can be used to increase the total length of the resistance wires in the heating area, increase the overall power, and achieve rapid heating.

[0043] Furthermore, it is found that when using resistance wires with a smaller core diameter, the resistance value will increase. On the premise that the input voltage remains unchanged, the current passing through the heating area will decrease, resulting in a reduction in the magnetic field strength. Therefore, the core diameter of the heating resistance wires adopted in the present invention is 2 mm.

[0044] Furthermore, in order to avoid the problem that the time for the temperature to stabilize in the later stage is too long due to too fast heating, the overall power of the silicone heating sheets with different sizes should be set separately. The overall power of the silicone heating device corresponding to 8 inches is set at about 400 W, and the overall power of the silicone heating device corresponding to 12 inches is set at about 600 W.

[0045] When the current passes through the heating resistor wire, a surrounding current is formed in the metal, which eventually forms an electromagnetic field. The size and direction of this magnetic field are related to the current and the arrangement pattern of the heating resistor wire. Therefore, on the basis of ensuring temperature uniformity, it is also necessary to reduce the influence of the magnetic field generated by the heating resistor wire by designing the arrangement pattern of the heating resistor wire.

[0046] Since the electric heating layer is divided into the central heating area 401 and the annular heating area 402, and since the heating powers in the central heating area 401 and the annular heating area 402 are different, the electromagnetic field strength and magnetic field direction generated in the two areas are different. Therefore, it is considered to design the arrangement patterns of the heating resistance wires in the central heating area 401 and the annular heating area 402 respectively, so that most of the magnetic fields generated in the corresponding areas can be offset by themselves.

[0047] In this embodiment, the central heating area is divided into a symmetrical first semicircular area and a second semicircular area, and the heating resistance wire enters the central heating area and exits the central heating area at the same end, which is conducive to arranging multiple sections of heating resistance wires with opposite current flows in the central heating area to fully cancel out the magnetic field.

[0048] Specifically, in one embodiment of the present invention, when there is no debonding hole in the heating device, the first semicircular region and the second region are symmetrically centered with the diameter of the silicone heating device, and a first boundary with the diameter of the central heating region as the boundary is formed in the central heating region 401, and a second boundary and a third boundary are formed with the upper and lower semicircular arcs of the central heating region 401 as the boundaries. The semicircle formed by the first boundary and the second boundary is the first semicircular region, and the semicircle formed by the first boundary and the third boundary is the second semicircular region.

[0049] like Figure 4 As shown, the heating resistor wire enters the first semicircular area from one end of the first boundary, extends in a direction perpendicular to the first boundary, and when reaching the second boundary, continues to turn back to the first boundary in a direction perpendicular to the first boundary, and is arranged back and forth. Then, it enters the second semicircular area from the other end of the first boundary, and is arranged in the same manner as in the first semicircular area, so that the heating resistor wires in the first semicircular area and the second semicircular area are centrally symmetrically distributed, which can ensure uniform heating and achieve magnetic field offset.

[0050] In another embodiment, the heating resistance wire enters the first area, takes one end of the second boundary as the starting point, and extends in an arc along a direction parallel to the second boundary to the other end of the second boundary; when reaching the other end point of the second boundary, it continues to turn back to the starting end along the circumference of the second boundary, and is arranged in an S-shaped turn. Finally, the heating resistance wire enters the second semicircular area from the center position of the central heating area, and the arrangement pattern in the second semicircular area is the same as the arrangement pattern in the first semicircular area, and is symmetrically distributed.

[0051] Since the current has opposite directions in the adjacent folded-back heating resistance wires, the magnetic fields generated in the first semi-circular region and the second semi-circular region can cancel each other out respectively.

[0052] In this embodiment, the arrangement of the heating resistance wires in the annular heating region 402 is as follows: with the center of the annular heating region as the center, in the annular region of the annular heating region, they are folded back radially and arranged circumferentially. The extending direction of the heating resistance wires passes through the center, and the number of heating resistance wires arranged circumferentially is an even number.

[0053] Specifically, the heating resistance wires in the annular heating region can be regarded as multiple sections of U-shaped resistance wires connected in series and arranged circumferentially in the annular region. The length of the U-shaped resistance wire is approximately the same as the width of the annular heating region. The current has different directions in the U-shaped resistance wire, so that the magnetic field generated by each section of the U-shaped resistance wire is cancelled by itself, thereby realizing the magnetic field cancellation in the annular heating region.

[0054] In an embodiment of the present invention, as Figure 6 shown, when there are irregular holes in the annular heating region, symmetrical structures are arranged on both sides of the holes, and the number of heating resistance wires on both sides is an even number for magnetic field cancellation.

[0055] In another embodiment of the present invention, when a plurality of degassing holes A are arranged in the central heating region, as Figure 3 shown, they are arranged to extend in a direction perpendicular to the first boundary and fold back at the positions of each degassing hole A1, A2, and A3 in the first semi-circular region or the second semi-circular region. In this embodiment, the first semi-circular region is divided into a folded-back region, a wire-arranging region, and other regions.

[0056] The folded-back region is a circular region without heating resistance wires formed with the degassing hole as the center and a preset length as the radius. According to the processing accuracy, the preset length can be twice the radius of the degassing hole. Since the core diameter of the heating resistance wire is smaller than the diameter of the folded-back region, the heating resistance wire can fold back multiple times in the diameter direction of the folded-back region.

[0057] The wire-arranging region is the region located between two adjacent folded-back regions along the extending direction of the heating resistance wire and the region where the projections of the two folded-back regions overlap in the extending direction of the heating resistance wire; The other region is the region where the resistance wires are arranged in a folded-back manner.

[0058] Specifically, as Figure 5 shown, the folded-back regions are two circular regions (indicated by the dotted line frames) formed with the degassing holes A1 and A3 as the centers and the diameter of the degassing hole as the radius. There is no arrangement of heating resistance wires in the folded-back regions. And when the heating resistance wire folds back at the boundary of the folded-back region.

[0059] When both the degassing holes A1 and A3 are located in the first semi-circular region and the distance between the positions of the degassing holes A1 and A3 is relatively close, the length of the wire arrangement region is the distance between the degassing holes A1 and A3 in the Y direction; the width of the wire arrangement region is the length of the overlapping region of the projections of the two folding-back regions in the Y direction in the X direction.

[0060] In this region, the wire arrangement region is divided into a first wire arrangement region S1 and a second wire arrangement S2. On the one hand, it ensures uniform heating, and on the other hand, by arranging the heating resistance wires in a folding-back manner in the first wire arrangement region and the second wire arrangement respectively, the length of the heating resistance wires that can be used to counteract the electromagnetic field is increased, that is Figure 5 the part of the horizontal arrow in the figure, reducing the magnetic field strength.

[0061] When the degassing hole A1 and the degassing hole A2 are respectively located in the first semi-circular region and the second semi-circular region, the distance between the positions is relatively close and the projections of the folding-back regions of the two holes overlap in the Y direction, the arrangement method of the heating resistance wires in the wire arrangement region S is: reciprocating and folding back between the first semi-circular region and the second semi-circular region. At this time, the wire arrangement region is not divided.

[0062] As Figure 5 shown, it enters the second semi-circular region from the direction of the degassing hole A1 in the first semi-circular region close to the second semi-circular region. At the boundary position of the folding-back region of the degassing hole A2, it folds back to the folding-back region of the degassing hole A2, and then folds back until the heating resistance wire leaves the wire arrangement region S in the X direction. This arrangement method improves the symmetry of the distribution of the heating resistance wires and enables magnetic field cancellation in the X direction at the upper and lower positions of the holes whose Y-direction distance is close to the boundary.

[0063] Embodiment 1 In this embodiment, an 8-inch (diameter 200 mm) wafer chuck is taken as an example. Since the area is small, no degassing holes are provided. As Figure 4 shown, the corresponding central heating region 401 is a circle with a diameter of 120 mm, and the annular region formed between 120 mm and 200 mm in diameter is the annular heating region 402.

[0064] By adjusting the distribution density of the heating resistance wires, the ratio of the heating power of the annular heating region 402 to the heating power of the central heating region 401 is 3:2. At the same time, in order to avoid too long a time for the temperature to stabilize in the later stage due to too fast heating, the overall power of the silicone heating device corresponding to 8 inches is set at about 400 W.

[0065] Further, the heating resistance wires in the central heating region 401 are centered on the center line of the silicone heating device on the plane and are divided into a first semi-circular region and a second semi-circular region. The positions where the heating resistance wires enter and exit the central heating region are at the same end. In the central heating region 401, a first boundary is formed with the diameter of the silicone heating device in the central heating region as the boundary, and second and third boundaries are formed with the upper and lower semi-circular arcs of the central heating region 401 as the boundaries. The semi-circle formed by the first boundary and the second boundary is the first semi-circular region, and the semi-circle formed by the first boundary and the third boundary is the second semi-circular region.

[0066] In the first semi-circular region, the heating resistance wires extend in a direction perpendicular to the first boundary within the first and second boundaries and are arranged in a folded-back manner; when the first semi-circle is fully arranged, they enter the second region from the other end of the first boundary and are arranged in a folded-back manner in the same form within the first and third boundaries.

[0067] Further, in the annular heating region 402, they are arranged in a folded-back manner along the radial direction and in a circumferential arrangement, and the extending direction of the heating resistance wires passes through the center, and the number of heating resistance wires arranged circumferentially is an even number.

[0068] Embodiment 2 In this embodiment, a 12-inch (diameter 300 mm) wafer chuck is taken as an example. As Figure 3 shown, the central heating region 401 of the corresponding silicone heating sheet is a circle with a diameter of 200 mm, and the ring formed between 200 mm and 300 mm in diameter is the annular heating region 402.

[0069] A heating resistance wire with a core diameter of 2 mm is used to increase the total wire length in the heating region. By adjusting the distribution density of the heating resistance wires, the ratio of the heating power of the annular heating region 402 to the heating power of the central heating region 401 is 3:2. At the same time, in order to avoid too long a time for the later temperature to stabilize due to too fast heating, the overall power of the silicone heating device corresponding to an 8-inch one is set at about 600 W.

[0070] In this embodiment, in order to ensure assembly with the wafer chuck, as Figure 5 shown, glue discharge holes A1, A2, and A3 are opened at corresponding positions on the silicone heating device.

[0071] When arranging the heating resistance wires in the first semi-circular region provided with the glue discharge holes A1 and A3, since the magnetic field cancellation is achieved by arranging 1 heating resistance wire, it is necessary to satisfy the symmetrical distribution of the heating resistance wires and the current directions of every two adjacent heating resistance wires are opposite, and at the same time, to achieve as much magnetic field cancellation as possible. The wire arrangement area between the glue discharge holes A1 and A3 is divided into a first wire arrangement area S1 and a second wire arrangement area S2, and the heating resistance wires in each area are arranged in a folded-back manner. Compared withFigure 2 The wiring method has opposite currents at the bends, which can offset the magnetic fields generated at the bends of the upper and lower parts. At the same time, the length of the resistance wire at the hole is increased to achieve magnetic field offset at more locations.

[0072] Furthermore, since the distance between the debonding holes A1 and A2 is relatively close and they are located in the first semicircle area and the second semicircle area respectively, when arranging the heating resistor wire, taking the heating resistor wire entering the first heating resistor wire area from the right as an example, it is first arranged in the Y direction toward the second boundary straight line, and then turns back after reaching the second boundary. When it turns back upwards to the turning interval of the debonding hole A1 (indicated by the dotted line), it enters the second semicircle area along the -Y direction through the wiring interval S.

[0073] In this embodiment, the wiring area S between the debonding holes A1 and A2 is not divided, and turns back and forth between the first radius area and the second radius area until the heating resistor wire leaves the wiring area S in the X direction.

[0074] Furthermore, when the heating resistor wire leaves the wiring area S but is still within the boundary of the return area of ​​the glue discharge hole A2 in the X direction, the heating resistor wire continues to extend along the Y direction to the first boundary and then turns back to the return area of ​​A2 until it leaves the boundary of the return area of ​​A2 and re-enters the first semicircular area.

[0075] Finally, the distribution of the heating resistors can offset most of the electromagnetic interference in the plane, but there is still a part of the magnetic field in the direction of the wafer position. Therefore, further, using the metal copper mesh in the silicone heating device as a shielding layer can further ensure that the electromagnetic radiation of this part can be eliminated.

[0076] Figures 7 - 8 The temperature uniformity test and electromagnetic radiation test results of the silicone heating device in this embodiment show that, in the actual test process, the temperature uniformity can be achieved within ±1.5°C.

[0077] When using an electromagnetic radiation measuring instrument to measure the intensity of electromagnetic radiation generated during the heating process, first stick the heating sheet into a sealed copper box, then heat the silicone heating sheet to 200°C, and after it stabilizes, measure the radiation intensity, which will be displayed as 0.

[0078] The present invention also provides a device embodiment that is consistent with the above embodiment. The explanation based on the same name meaning is the same as the above embodiment, and has the same technical effect as the above embodiment, which will not be repeated here.

[0079] like Figure 2 As shown, the present invention discloses a wafer high temperature testing device, which utilizes the above-mentioned wafer chuck silicone heating device to heat the wafer chuck.

[0080] Finally, it should be noted that the embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other. For the systems or devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple. For the relevant parts, reference can be made to the description in the method section.

[0081] The above embodiments are only used to illustrate the technical solutions disclosed by the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer chuck silicone heating device, characterized in that: include: An electric heating plate, on which a heating resistance wire is arranged, for heating the electric heating plate to a preset temperature; An electromagnetic shielding layer, connected to the grounding wire, disposed on a side of the electric heating plate facing the wafer chuck, and used for shielding electromagnetic radiation generated by the heating resistance wire; A first insulating layer is arranged between the electric heating plate and the electromagnetic shielding layer, wherein a projection of the first insulating layer completely covers the electric heating plate and the electromagnetic shielding layer; A second insulating layer is disposed on a side of the electromagnetic shielding layer facing the wafer chuck, wherein a projection of the second insulating layer completely covers the electromagnetic shielding layer, and is used to isolate the electromagnetic shielding layer from the wafer chuck; The third insulating layer is arranged on a side of the electric heating plate away from the wafer chuck, and the projection of the third insulating layer completely covers the electric heating plate.

2. The wafer chuck silicone heating device according to claim 1, characterized in that: The electromagnetic shielding layer is a metal foil or a metal mesh, and the mesh number of the metal mesh is 120.

3. The wafer chuck silicone heating device according to claim 1, characterized in that: The electric heating plate comprises: A central heating area, arranged at the center of the electric heating plate; an annular heating area, the center of the annular heating area coincides with the center of the central heating area, and the inner diameter of the annular heating area is not less than the radius of the central heating area; The heating resistance wire arranged in the central heating area is connected in series with the heating resistance wire arranged in the annular heating area.

4. The wafer chuck silicone heating device according to claim 3, characterized in that: The ratio of the heating power of the annular heating area to the heating power of the central heating area is (3±0.2):(2±0.2).

5. The wafer chuck silicone heating device according to claim 3, characterized in that: In the annular heating area, the heating resistance wire is arranged as follows: with the center of the circle of the central heating area as the center, it is radially folded and arranged circumferentially in the annular area of ​​the annular heating area, the extension direction of the heating resistance wire passes through the center, and the heating resistance wires arranged circumferentially are an even number.

6. The wafer chuck silicone heating device according to claim 3, characterized in that: Also includes: A plurality of glue discharge holes are arranged in the central heating area for discharging excess glue.

7. The wafer chuck silicone heating device according to claim 6, characterized in that: The central heating area includes: a first semicircular area and a second semicircular area that are symmetrically distributed, and the heating resistance wires in the first semicircular area and the second semicircular area are evenly arranged; Wherein, the first semicircular area and / or the second semicircular area include: a folding area and a wiring area; the folding area is an area without a heating resistor wire formed with the debonding hole as the center and a preset length as the radius; the wiring area is an area located between two adjacent folding areas along the extension direction of the heating resistor wire, and the projections of the two folding areas in the extension direction of the heating resistor wire overlap; When the two debonding holes are both located in the first semicircular area or the second semicircular area, the wiring area is divided into a first wiring area and a second wiring area, and the heating resistor wire is folded and arranged in the first wiring area and the second wiring area respectively for magnetic field offset.

8. The wafer chuck silicone heating device according to claim 7, characterized in that: When the two debonding holes are located in the first semicircular area and the second semicircular area respectively, the arrangement of the heating resistance wire is as follows: Along the extension direction of the heating resistance wire, perpendicular to the first semicircular area and the symmetry center of the first semicircular area, enter the second semicircular area from the first semicircular area, turn back at the turning area in the second semicircular area, enter the first semicircular area again, and turn back and forth between the turning areas of the two adjacent debonding holes until the heating resistance wire leaves the wiring area; When the heating resistor wire leaves the wiring area but is within the boundary of the return area on the first semicircular area or the second semicircular area, the heating resistor wire turns back in the first semicircular area or the second semicircular area between the return area and the center of symmetry until it leaves the boundary of the return area and re-enters the first semicircular area or the second semicircular area.

9. The wafer chuck silicone heating device according to claim 1, characterized in that: The diameter of the heating resistance wire is 2.0±0.1 mm.

10. A wafer high temperature testing device, characterized in that: It comprises a wafer chuck silicone heating device as described in any one of claims 1-9.

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