Method for producing component having recess structure and component having recess structure

Abstract

The present invention pertains to a method for producing a member having a recessed structure, the method comprising: a step (1) in which a catalytic material containing an organic compound having a polar functional group is provided on a portion of a first surface of an object to be processed, the first surface comprising an element having a fluoride boiling point of 550 DEG C or less; a step (2) of irradiating the catalytic material with irradiation light including deep ultraviolet light having a wavelength of 380 nm or less; and a step (3) in which the object to be processed is exposed to a fluorine-containing gas at 80 DEG C or higher. After the step (3), a recessed structure is formed on the lower side of the catalytic material on the first surface.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a component having a concave structure and a component having a concave structure. Background Art

[0002] There is a demand for microfabrication techniques capable of forming a fine concave structure on the surface of a specimen in various fields. As microfabrication techniques, various methods have been proposed and put into practical use so far.

[0003] As one of the microfabrication techniques, there is a dry etching method in which a reactive gas, ions, and / or radicals are used as reaction bodies to etch the surface of a specimen.

[0004] For example, in a reactive ion etching (RIE) method typified by an inductively coupled plasma - RIE (ICP - RIE) method, etching is performed by making an etching gas plasma and causing it to collide with a specimen. It has been reported that such an RIE method can perform extremely fine processing on a specimen (for example, Non - Patent Document 1).

[0005] Prior Art Documents

[0006] Non - Patent Documents

[0007] Non - Patent Document 1: xiao Li, King Yuk Chan and Rodica Ramer, “Fabrication of Through via Holes in Ultra - Thin Fused Silica Wafers for Microwave and Millimeter - Wave Applications”, micromachines, 2018, 9, 138 Summary of the Invention

[0008] However, in the RIE method, when forming a concave structure on the surface of a specimen, it is likely to form a tapered shape on the side wall, and it is difficult to form a concave structure close to an ideal shape (vertical structure).

[0009] The present invention has been completed in view of such a background, and an object of the present invention is to provide a method capable of relatively easily manufacturing a component having a concave structure close to vertical. In addition, an object of the present invention is to provide a component having a concave structure.

[0010] In the present invention,

[0011] There is provided a method for manufacturing a component having a concave structure, the method having the following steps:

[0012] Step (1) is a step of disposing a catalytic material on a part of the first surface of a body to be processed, wherein the first surface is composed of an element with a fluoride boiling point of 550°C or lower, and the catalytic material contains an organic compound having a polar functional group;

[0013] Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light with a wavelength of 380 nm or less; and

[0014] Step (3) is to expose the body to be processed to a fluorine-containing gas at 80°C or higher;

[0015] After the above step (3), a concave structure is formed on the lower side of the catalytic material on the first surface.

[0016] In addition, in the present invention,

[0017] A method for manufacturing a component having a concave structure is provided, which includes the following steps:

[0018] Step (1) is a step of disposing a catalytic material on a first region and a second region of the first surface of a body to be processed, wherein the first surface is composed of an element with a fluoride boiling point of 550°C or lower, and the catalytic material contains an organic compound having a polar functional group. The catalytic material disposed in the second region is thicker than the catalytic material disposed in the first region;

[0019] Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light with a wavelength of 380 nm or less;

[0020] Step (3) is to expose the body to be processed to a fluorine-containing gas at 80°C or higher;

[0021] After the above step (3), a first concave structure is formed on the lower side of the catalytic material in the first region of the first surface, and a second concave structure is formed on the lower side of the catalytic material in the second region. The depth of the second concave structure is deeper than that of the first concave structure.

[0022] In addition, in the present invention, a component having a concave structure on a first surface is provided,

[0023] The concave structure is a bottomed structure and / or a through structure,

[0024] The first surface contains at least one element selected from B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au,

[0025] The above concave structure is defined by a first opening formed in the above first surface, surrounding side walls, and a bottom surface or a second opening.

[0026] The above side walls have a surface roughness (arithmetic mean roughness Ra) of 5 nm or less.

[0027] In the present invention, a method capable of relatively easily manufacturing a component having a concave structure close to vertical can be provided. In addition, in the present invention, a component having a concave structure can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a diagram schematically showing a reaction mechanism that may occur on the first surface of a workpiece when the organic compound does not have a polar functional group.

[0029] Figure 2 It is a diagram schematically showing a reaction mechanism that may occur on the first surface of a workpiece when the organic compound has a polar functional group.

[0030] Figure 3 It is a diagram schematically showing a reaction mechanism that may occur on the first surface of a workpiece when the organic compound has other polar functional groups.

[0031] Figure 4 It is a diagram showing the relationship between the processing temperature and the etching reaction rate during the etching of glass with hydrogen fluoride (HF) gas.

[0032] Figure 5 It is a cross-sectional view schematically showing a process of a method according to an embodiment of the present invention.

[0033] Figure 6 It is a cross-sectional view schematically showing a process of a method according to an embodiment of the present invention.

[0034] Figure 7 It is a diagram schematically showing the flow of a method for manufacturing a component having a concave structure according to an embodiment of the present invention.

[0035] Figure 8 It is a perspective view schematically showing a case where a catalytic material is provided on a workpiece in a method for manufacturing a component having a concave structure according to an embodiment of the present invention.

[0036] Figure 9 It is a cross-sectional view schematically showing an example of a workpiece after an etching process in a method for manufacturing a component having a concave structure according to an embodiment of the present invention.

[0037] Figure 10 It is a perspective view of a component according to an embodiment of the present invention.

[0038] Figure 11 is Figure 10 A schematic cross-sectional view along line A-A of a component of an embodiment of the present invention as shown.

[0039] Figure 12 A diagram schematically showing the surface morphology of the side wall of a recess structure in a component of an embodiment of the present invention.

[0040] Figure 13 A schematic diagram for explaining the taper angle θ of the recess structure.

[0041] Figure 14 A diagram schematically showing the process flow of a method for manufacturing a component having a recess structure according to another embodiment of the present invention.

[0042] Figure 15 A perspective view schematically showing a case where a catalytic material is provided on a body to be processed in a method for manufacturing a component having a recess structure according to another embodiment of the present invention.

[0043] Figure 16 A cross-sectional view schematically showing an example of the body to be processed after an etching process in a method for manufacturing a component having a recess structure according to another embodiment of the present invention.

[0044] Figure 17 A photograph showing an example of a cross-section of a recess structure of an embodiment of the present invention (Sample 1).

[0045] Figure 18 A photograph showing an example of a cross-section of a recess structure of another embodiment of the present invention (Sample 2).

[0046] Figure 19 A photograph showing an example of a cross-section of a recess structure of yet another embodiment of the present invention (Sample 3).

[0047] Figure 20 A photograph showing an example of a cross-section of a recess structure of yet another embodiment of the present invention (Sample 4).

[0048] Figure 21 A photograph showing an example of a cross-section of a recess structure of yet another embodiment of the present invention (Sample 5).

[0049] Figure 22 A graph showing the relationship between the irradiation amount P of irradiation light and the etching rate obtained from an embodiment of the present invention.

[0050] Figure 23 A graph showing the relationship between the thickness of the catalytic material and the etching rate.

[0051] Figure 24 This is a photograph showing an example of a cross-section of a concave structure (sample 34) representing another embodiment of the present invention. Detailed Embodiment

[0052] Hereinafter, an embodiment of the present invention will be described.

[0053] As described above, in the conventional RIE method, when forming a concave structure on the surface of a specimen, it is likely to form a "conical shape" on the side wall of the concave structure, and it is difficult to form a concave structure close to vertical.

[0054] Here, the "conical shape" refers to a form in which the side wall dividing the concave structure is inclined with respect to the extension axis in the depth direction of the concave structure. For example, when the concave structure is a bottomed structure, the concave structure having a "conical shape" has a form in which the cross-section is smaller closer to the bottom side.

[0055] In order to address such conventional problems, the inventors of the present application conducted in-depth research and development and found a microfabrication technique capable of more simply forming a concave structure close to vertical.

[0056] The new microfabrication technique (hereinafter referred to as "the first processing technique") developed by the inventors of the present application has the following steps: a step of exposing a processed body provided with a catalytic material on a first surface to a fluorine-containing gas at a processing temperature of 80°C or higher (hereinafter referred to as "etching step"). As will be described in detail later, by implementing such an "etching step", in the first processing technique, it is possible to selectively etch a region (hereinafter referred to as "coated region") provided with a catalytic material on the first surface of the processed body.

[0057] However, according to further research by the inventors of the present application, in the first processing technique, there is a tendency for the etching rate of the processed body to be extremely high, such as 20 nm / second. Although such a high etching rate is ideal for the rapid processing of the processed body, it may become a problem when performing relatively shallow processing on the processed body. The reason is that at too high an etching rate, it is difficult to accurately stop etching at a specified processing depth.

[0058] The inventors of the present application conducted in-depth research on such problems related to the first processing technique. Then, it was found that by irradiating a specific irradiation light on the catalytic material before performing the etching step on the processed body, the etching rate in the subsequent etching step can be controlled, thus completing the present invention.

[0059] That is, in one embodiment of the present invention,

[0060] A method for manufacturing a component having a concave structure is provided, having the following steps:

[0061] Step (1) is a step of disposing a catalytic material on a part of the first surface of the object to be processed, where the first surface is composed of an element with a fluoride boiling point of 550 °C or lower, and the catalytic material contains an organic compound having a polar functional group;

[0062] Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light having a wavelength of 380 nm or lower; and

[0063] Step (3) is to expose the object to be processed to a fluorine-containing gas at 80 °C or higher;

[0064] After the above step (3), a concave structure is formed on the lower side of the catalytic material on the first surface.

[0065] Hereinafter, a method according to an embodiment of the present invention will be described in more detail with reference to the drawings.

[0066] First, in order to better understand the method according to an embodiment of the present invention, the role of the catalytic material and the effect of the processing temperature in the above first processing technique will be described.

[0067] It should be noted that the following description is based on the mechanism considered at the current moment, but the actual phenomenon may also be caused by other mechanisms.

[0068] (Role of the catalytic material)

[0069] In the first processing technique, the catalytic material contains an organic compound having a polar functional group. It is considered that such an organic compound having a polar functional group has the effect of reducing the activation energy for forming a fluoride on the surface of the object to be processed.

[0070] Hereinafter, Figures 1 to 3 this effect will be described. Figures 1 to 3 schematically shows the situation of the reaction on the surface of the object to be processed provided with the catalytic material.

[0071] It should be noted that in the following description, as an example, it is assumed that the object to be processed is SiO 2 , and the processed surface (first surface) of the object to be processed is hydrogen-terminated.

[0072] First, Figure 1 schematically shows the assumed etching mechanism on the first surface of the object to be processed when the organic compound does not have a polar functional group.

[0073] When hydrogen fluoride (HF) gas is supplied from the environment to the "coated area", which is the area of the surface of SiO 2 serving as the object to be processed and provided with the catalytic material, as shown in (i), the HF molecule (a) makes a nucleophilic attack on the Si atom (b).

[0074] In order for Si atoms (b) to react with F atoms on the surface of the treated object, the OH groups (c) on the surface need to interact with the H atoms of the HF molecules (a) to weaken the H-F bonds as shown in (ii). That is, if the energy to cut the H-F bonds of the HF molecules (a) is not provided, the H-F bonds will not be generated as shown in (iii). 2 The Si—F bond (d) separated from O (g).

[0075] However, in the present reaction system, there is no substance that contributes to the reduction of the activation energy of the Si—F bond (d), and therefore, no significant etching reaction occurs in the coated region.

[0076] In this system, as in normal mask patterning, the etching rate tends to be higher in the portion of the object in direct contact with the HF gas, that is, in the surface area where no catalyst material is provided (hereinafter referred to as "non-coated area").

[0077] On the other hand, Figure 2 The reaction mechanism on the first surface of the object to be processed when the organic compound has a polar functional group is schematically shown in FIG. Here, hydroxyl groups are assumed as polar functional groups.

[0078] In this case, as shown in (i) when HF gas is supplied from the environment to the coated region of the catalyst material, HF molecules (a) perform nucleophilic attack on Si atoms (b).

[0079] However, in this case, in addition to the above, the O atom of the -δ part (e) of the polar functional group interacts with the H of the HF molecule (a). In addition, the H atom of the +δ part (f) of the polar functional group interacts with the surface OH group (c).

[0080] Therefore, as shown in (ii), the H-F bond of the HF molecule (a) is weakened. In addition, the bond between Si (b) and OH (c) is also weakened. As a result, the activation energy required for the bonding reaction between the Si atom and the F atom is reduced.

[0081] As a result, as shown in (iii), the O atom at the -δ part (e) of the polar functional group extracts the H atom of the HF molecule (a), and the H atom at the +δ part (f) reacts with the OH group on the surface to generate H 2 O(g)'s detachment.

[0082] Thus, the Si atom (b) is bonded to the fluorine atom. Finally, SiF 4 and H 2 O.

[0083] SiO 2+4HF → SiF 4 ↑+ 2H 2 O↑ (1)

[0084] The SiF 4 and H 2 O generated during the reaction are both gases at the treatment temperature and quickly escape from the system.

[0085] Through the above reaction mechanism, selective etching is performed directly below the coated area of the catalytic material in the object to be treated.

[0086] It should be noted that the above reaction is not limited to the case where the polar functional group contains a hydroxyl group. For example, the same reaction can also occur when the polar functional group has at least one of an aldehyde group, a hydroxyl group, a carboxyl group, an amino group, a sulfo group, a thiol group, and an amide bond.

[0087] In addition, Figure 2 takes the case where the polar functional group of the organic compound contains an H atom as an example to illustrate its reaction mechanism. However, the polar functional group of the organic compound is not necessarily limited to having an H atom.

[0088] In Figure 3 the reaction mechanism when the organic compound has other polar functional groups is schematically shown. Here, a carbonyl group (>C=O) without an H atom is assumed as the polar functional group.

[0089] In this example, when supplying HF gas to the coated area of the catalytic material from the environment, as shown in (i), the HF molecule (a) makes a nucleophilic attack on the Si atom (b). In addition, the O atom of the -δ part (e) of the polar functional group interacts with the H atom of the HF molecule (a).

[0090] Thereby, as shown in (ii), the H-F bond of the HF molecule (a) is weakened.

[0091] Next, as shown in (iii), the H atom detached from the HF molecule (a) by the O atom of the -δ part (e) of the polar functional group bonds with the OH group (c) to generate H 2 O(g).

[0092] In this way, in this case, the activation energy required for the bonding reaction between the Si atom and the F atom is also reduced. As a result, the reaction shown in the above reaction formula (1) occurs, and in the object to be treated, selective etching is performed directly below the coated area.

[0093] The same reaction mechanism can also occur, for example, when the polar functional group has at least one of a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

[0094] Thus, in the first processing technique, due to the presence of the organic compound having a polar functional group in the catalytic material, the fluoride formation reaction is promoted in the coated region of the object to be processed, and selective etching can be performed directly below the coated region.

[0095] (Effect of processing temperature)

[0096] Next, the effect of the processing temperature will be described.

[0097] In the first processing technique, the processing temperature is 80°C or higher. This is because when the temperature is lower than 80°C, appropriate etching selectivity does not occur between the coated region and the non-coated region on the first surface of the object to be processed.

[0098] Hereinafter, with reference to Figure 4 a more detailed description of the effect of the processing temperature will be given.

[0099] Figure 4 ( ) shows the relationship between the processing temperature and the etching reaction rate during the etching of glass with hydrogen fluoride (HF) gas obtained by the inventors of the present application.

[0100] According to Figure 4 , the etching rate of the glass increases slowly with respect to the temperature before the processing temperature reaches 80°C. However, if the processing temperature reaches 80°C or higher, the etching rate decreases sharply. As a result, the etching rate shows a peak at a temperature lower than 80°C.

[0101] It is considered that this phenomenon corresponds to the associated / non-associated state of HF gas. That is, HF gas is in an associated state at temperatures lower than 80°C and in a non-associated (monomeric) state at temperatures higher than 80°C. In addition, when HF gas is in an associated state, when observed as one molecule, the bond force of the H-F bond is relatively weakened. Therefore, the F atom of the HF molecule is easily bonded to the surface of the object to be processed, and fluoride is easily formed. It is considered that a high etching rate is obtained at temperatures lower than 80°C through such behavior.

[0102] In the first processing technique, when the processing temperature is assumed to be less than 80°C, the influence of the associated state of HF gas will occur, resulting in the etching of the object to be processed in the non-coated region of the catalytic material. Therefore, the etching selectivity of the coated region based on the above reaction mechanism is reduced.

[0103] On the other hand, when the processing temperature is 80°C or higher, the high etching force generated by the associated state of HF gas can be suppressed in the non-coated region of the catalytic material. In addition, based on the above reaction mechanism, the object to be processed can be etched directly below the coated region. As a result, a high etching selectivity can be obtained between the coated region and the non-coated region of the catalytic material at a processing temperature of 80°C or higher. In addition, thereby, in the first processing technique, selective etching of the coated region can be performed.

[0104] (Formed concave structure)

[0105] In the conventional RIE method, it is easy to form a "conical shape" on the sidewall of the concave structure, and it is difficult to form a concave structure close to vertical.

[0106] In contrast, in the first processing technique, it is possible to relatively easily form a concave structure (hereinafter referred to as a "vertical concave structure") having sidewalls that do not have a "conical shape" and that extend substantially parallel to the extension axis in the depth direction.

[0107] Hereinafter, with reference to Figure 5 and Figure 6 the reason therefor will be described.

[0108] Figure 5 and Figure 6 schematically show a process of the first processing technique.

[0109] Figure 5 schematically shows a state in which a catalytic material 3 is provided on the surface of the object to be processed 1. It should be noted that Figure 5 and Figure 6 in the displayed relationship, the object to be processed 1 and the catalytic material 3 are shown as being separated from each other, but in reality, the two are in contact.

[0110] As described above, it is assumed that the object to be processed 1 is SiO 2 and it is assumed that the surface is terminated with H.

[0111] The catalytic material 3 is an organic compound having a polar functional group. Here, it is assumed that the OH group is the polar functional group. By providing the catalytic material 3 on the surface of the object to be processed 1, a coated region 8a and an uncoated region 8b are formed on the object to be processed 1.

[0112] As described above, by exposing the object to be processed 1 heated to 80°C or higher to HF gas, etching is selectively performed directly below the coated region 8a where the catalytic material 3 is provided. As a result, a concave structure is formed directly below the coated region 8a.

[0113] Figure 6 shows a state in which the etching of the object to be processed 1 has proceeded to a certain extent and a concave structure 5 having a certain depth has been formed.

[0114] As described above, the catalytic material 3 is provided on the coated region 8a. Therefore, even if the etching reaction is performed, the catalytic material 3 still remains on the bottom surface 6 of the concave structure 5. That is, during the continuation of the etching process, the bottom surface 6 of the concave structure 5 continues to be in contact with the catalytic material 3. As a result, the bottom surface 6 of the concave structure 5 is continuously etched due to the above reaction mechanism, and the bottom surface 6 continues to proceed in the depth direction.

[0115] On the other hand, when looking at the side wall 7 of the concave structure 5, once the etching starts, an etching reaction occurs at the portion of the side wall 7 in contact with the catalytic material 3 according to the above mechanism. More precisely, only the portion of the object to be processed 1 in contact with the side surface of the catalytic material 3 is etched. As a result, a concave structure 5 divided by the side wall 7 is formed at the portion in contact with the side surface of the catalytic material 3.

[0116] Among them, the catalytic material 3 continues to descend deeper. Therefore, after a certain moment, the upper portion of the side wall 7 no longer contacts the side surface of the catalytic material 3. Hereinafter, such a side wall 7 that does not contact the side surface of the catalytic material 3 will be referred to as the "first side wall portion 7a".

[0117] Here, as described above, etching hardly occurs in a portion where there is no catalytic material 3 such as the non-coated region 8b. In other words, in the object to be processed 1, the etching reaction occurs only when in contact with the catalytic material 3 and does not occur in other states. Therefore, in the side wall 7, the portion such as the first side wall portion 7a that no longer contacts the catalytic material 3 actually stops the progress of etching thereafter.

[0118] This is a characteristic that is decisively different from the conventional dry etching method such as the RIE method. That is, in the etching process of the RIE method, a region where etching has been completed, such as near the opening of the surface of the object to be processed, still continues to be exposed to the reaction gas. Therefore, since the etching process continues, the possibility of forming a concave structure with a tapered shape becomes high.

[0119] In the first processing technique, as a result of the etching stop effect of the first side wall portion 7a that does not contact the catalytic material 3, the etching of the object to be processed 1 is selectively performed only directly below the catalytic material 3, and finally a vertical concave structure can be formed.

[0120] Through the above effects, a characteristic vertical concave structure can be formed as the concave structure 5 in the first processing technique.

[0121] However, in the first processing technique, the etching rate of the object to be processed has a tendency to be extremely high, such as 20 nm / second. Although such a high etching rate is ideal for the rapid processing of the object to be processed, it may become a problem when performing a shallow concave processing on the object to be processed. The reason is that at too high an etching rate, it is difficult to accurately stop the etching at a specified processing depth.

[0122] However, in the method of an embodiment of the present invention, there is a step of irradiating a catalytic material with irradiation light containing deep ultraviolet light (DUV) having a wavelength of 380 nm or less before performing an etching process on a body to be processed (hereinafter, referred to as "DUV irradiation process"). When such a DUV irradiation process is added, the etching rate of the body to be processed can be controlled during the subsequent etching process.

[0123] It should be noted that in the method of an embodiment of the present invention, by performing the etching process after the DUV irradiation process, the etching rate of the body to be processed can be controlled. It is considered that this is because the number of polar functional groups changes due to the DUV irradiation process.

[0124] Hereinafter, referring again to the above Figure 5 This phenomenon will be described.

[0125] As Figure 5 shown, when a catalytic material 3 is provided on the surface of the body to be processed 1, a coated region 8a and an uncoated region 8b are formed on the body to be processed 1.

[0126] As described above, in the coated region 8a, due to the presence of the catalytic material 3, the reaction barrier in the reaction formula (1) is reduced, and during the etching process, etching selectively occurs in the coated region 8a.

[0127] However, when the DUV irradiation process is performed, it is exposed to deep ultraviolet light having a wavelength of 380 nm or less. As a result, a crosslinking reaction occurs in the catalytic material 3. The number of polar functional groups (for example, C-OH groups) contained in the catalytic material 3 is reduced by the crosslinking reaction. It is considered that during the subsequent etching process, the effect of reducing the reaction barrier of the reaction in the above reaction formula (1) is weakened, and the etching rate is reduced.

[0128] In addition, in this case, in the DUV irradiation process, by changing the irradiation intensity of the irradiation light containing deep ultraviolet light and the irradiation time of the irradiation light, the number of polar functional groups contained in the catalytic material 3 also changes. Therefore, by changing the irradiation conditions in the DUV irradiation process, the etching rate of the body to be processed 1 can be controlled during the etching process.

[0129] For example, in the case of forming a concave structure with a relatively shallow depth, the irradiation intensity of the irradiation light in the DUV irradiation process can be increased and / or the irradiation time can be extended. As a result, the etching rate in the etching process is significantly reduced, and over-etching of the body to be processed can be prevented.

[0130] In addition, in the case of forming a relatively deep concave structure, the irradiation intensity of the irradiation light in the DUV irradiation process can be weakened and / or the irradiation time can be shortened. As a result, the etching rate in the etching process can be increased, and the processing time can be shortened.

[0131] Thus, in the method of one embodiment of the present invention, components having a nearly vertical recess structure can be manufactured at various etching rates.

[0132] In addition, in the conventional RIE method, there is a limit to the etching depth of SiO 2 For example, when using a photoresist as a masking agent, there is a problem that it is difficult to precisely form a relatively deep vertical recess structure of 20 μm or more.

[0133] However, in one embodiment of the present invention, as long as a fluorine-containing gas is continuously supplied to the coated area, an etching reaction will occur. Therefore, a recess structure with a high aspect ratio can be formed. For example, an aspect ratio of 10 or more can also be achieved.

[0134] It should be noted that the "aspect ratio" refers to the dimension in the depth direction relative to the minimum dimension of the opening in the recess structure.

[0135] (Method for manufacturing a component having a recess structure according to one embodiment of the present invention)

[0136] Next, with reference to Figures 7 to 9 A method for manufacturing a component having a recess structure according to one embodiment of the present invention will be described in more detail.

[0137] Figure 7 Generally shows the flow of a method for manufacturing a component having a recess structure according to one embodiment of the present invention (hereinafter, simply referred to as "the first method").

[0138] As Figure 7 shown, the first method has the following steps:

[0139] (1) Step (S110), which is a step of providing a workpiece to be processed having a first surface, wherein the above-mentioned first surface contains an element with a fluoride boiling point of 550 °C or lower;

[0140] (2) Step (S120), which is a step of disposing a catalytic material on a part of the first surface of the workpiece to be processed, wherein the above-mentioned catalytic material contains an organic compound having a polar functional group;

[0141] (3) Step (S130), irradiating the above-mentioned catalytic material with irradiation light containing deep ultraviolet light (DUV) having a wavelength of 380 nm or less; and

[0142] (4) Step (S140), exposing the workpiece to be processed to a fluorine-containing gas at 80 °C or higher.

[0143] Hereinafter, each step will be described.

[0144] (Step S110)

[0145] First, prepare the object to be processed.

[0146] The object to be processed can be composed of a single component or multiple components.

[0147] When the object to be processed is composed of a single component, the object to be processed is composed of an element that forms a fluoride with a boiling point of 550 °C or lower by reacting with fluorine (F).

[0148] For example, the object to be processed may contain at least one element selected from B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. In addition, the object to be processed may further contain at least one element selected from H, N, Cl, Br, and O.

[0149] In particular, the object to be processed is preferably composed of an element that forms a fluoride with a boiling point of 200 °C or lower by reacting with fluorine.

[0150] For example, the fluoride of silicon (Si), SiF 4 , has a boiling point of -86 °C, and an object to be processed containing silicon can preferably be used as the object to be processed in the first method.

[0151] It should be noted that the boiling points of the fluorides of Al and Ca, (AlF 3 ) and (CaF 2 ), exceed 550 °C. Therefore, Al and Ca cannot be said to be elements that form fluorides with a boiling point of 550 °C or lower by reacting with fluorine (F).

[0152] The object to be processed can be, for example, a quartz glass substrate, a crystal substrate, or a silicon substrate.

[0153] On the other hand, when the object to be processed is composed of a laminate of multiple components, the outermost surface of the object to be processed (hereinafter referred to as the "first surface") contains an element whose fluoride has a boiling point of 550 °C or lower.

[0154] As described above, such elements can be selected from, for example, B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. In addition, the first surface may further contain at least one element selected from H, N, Cl, Br, and O.

[0155] For example, when the object to be processed has one or more films provided on a substrate, the outermost film may satisfy the above characteristics. Alternatively, the multiple films as a whole may satisfy the above characteristics.

[0156] Such a film may have, for example, SiO 2 , Si 3 N 4 and / or at least one of SiC.

[0157] Alternatively, the substrate may also have the above characteristics together with the film. In this case, by the first method, a component having a concave structure formed up to the inside of the substrate can be manufactured. The substrate may be, for example, a quartz glass substrate, a crystal substrate, or a silicon substrate.

[0158] It should be noted that, in the following description, to avoid complication, it is assumed that the object to be processed is composed of a single quartz glass, and a concave structure is formed on the first surface of the quartz glass.

[0159] (Step S120)

[0160] Next, a catalytic material is provided on the first surface of the object to be processed. The catalytic material is provided in a specified region on the first surface.

[0161] The catalytic material contains an organic compound having a polar functional group. The polar functional group may contain, for example, at least one selected from a hydroxyl group, an aldehyde group, a carboxyl group, an amino group, a sulfo group, a thiol group, an amide bond, a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

[0162] Typical examples of such organic compounds are, for example, phenolic resins, acrylic resins, and methacrylic resins.

[0163] The catalytic material may be composed only of the above-mentioned organic compound having a polar functional group, or may be provided in the form of a mixture with other additives.

[0164] In the latter case, the catalytic material may contain a solvent, a binder, and / or fine particles, etc.

[0165] The method for providing the catalytic material is not particularly limited.

[0166] The catalytic material can be provided on the first surface of the object to be processed, for example, by using a coating method, a printing method, a spin coating method, or a spraying method.

[0167] In Figure 8 a situation where a catalytic material is provided on the object to be processed is schematically shown.

[0168] As Figure 8 shown, the object to be processed 110 has a first surface 112 and a second surface 114. The catalytic material 130 is provided on a part of the first surface 112 of the object to be processed 110.

[0169] It should be noted that Figure 8In the example shown, the catalytic material 130 is arranged in a plurality of parallel linear patterns 131. However, this is only an example, and the catalytic material 130 can be arranged in any form according to the required recess structure. For example, the catalytic material 130 can be arranged as a straight line. Alternatively, the catalytic material 130 can be configured as a dot pattern, or a single dot.

[0170] The thickness of the catalytic material 130 is not particularly limited, and can be, for example, in the range of 0.1 μm to 4 μm. According to the above definition, the region where the catalytic material 130 is provided in the first surface 112 is called the coated region 140a, and the other regions are called the non-coated regions 140b.

[0171] (Step S130)

[0172] Next, irradiation light is irradiated onto the catalytic material 130. The irradiation light includes deep ultraviolet light (DUV) with a wavelength of 380 nm or less. The wavelength of the deep ultraviolet light can be in the range of 200 nm to 365 nm.

[0173] Normally, the irradiation light is irradiated from a light source. Such a light source can be a light source that emits light of a single wavelength (or a single wavelength range), or a light source that emits light of multiple wavelengths (or multiple wavelength ranges).

[0174] The irradiation conditions such as the irradiation intensity and irradiation time of the irradiation light are determined according to the etching rate used in the following step S140. That is, as the irradiation intensity of the irradiation light increases and the irradiation time prolongs, the etching rate of the object to be processed in step S140 decreases.

[0175] For example, the irradiation dose P (mJ / cm 2 ) can be 20 mJ / cm 2 or more.

[0176] Here, the irradiation dose P of the irradiation light is represented by the following formula (2):

[0177] Irradiation dose P (mJ / cm 2 ) =

[0178] Irradiation intensity of lamp A (mW / cm 2 ) × Irradiation time (sec) (2)

[0179] (Step S140)

[0180] Next, the object to be processed 110 provided with the catalytic material 130 is accommodated in a processing chamber. Then, the processing chamber is heated to a specified temperature and a processing gas is supplied to perform an etching process on the object to be processed.

[0181] The processing gas contains hydrogen fluoride gas or fluorine gas. For example, the processing gas can be adjusted to a specified concentration using a carrier gas such as argon or nitrogen. In this case, the concentration of hydrogen fluoride gas or fluorine gas can be in the range of, for example, 0.1 vol% to 100 vol%.

[0182] As described above, the processing temperature is 80°C or higher. The actual processing temperature varies depending on the elements contained in the object to be processed 110 (especially the first surface 112), and the type and depth of the concave structure, etc. In general cases, it is in the range of 200°C to 450°C, preferably in the range of 250°C to 400°C. By making the processing temperature 450°C or lower, the deterioration of the organic compounds contained in the catalytic material 130 can be suppressed.

[0183] As described above, through the etching process of the object to be processed 110 in such an environment, the above reaction formula (1) is generated in the coating area 140a. In addition, the fluoride and water generated by the reaction become gases and escape to the outside of the system. As a result, a concave structure is formed in the coating area 140a of the first surface 112.

[0184] The concave structure can be a bottomed structure or a through structure. The bottomed structure can be, for example, a bottomed hole and / or a bottomed groove. In addition, the through structure can be a through hole or a through groove.

[0185] Figure 9 An example of the cross-section of the object to be processed 110 after the etching process is schematically shown.

[0186] Figure 9 In the example shown, the concave structure 150 is configured as a groove, and when viewed from above, each groove extends parallel. In this example, although each groove extends in the depth direction from the first surface 112, it does not reach the second surface 114, so it is a bottomed groove.

[0187] It should be noted that after step S140, a process of removing the catalytic material 130 remaining on the bottom surface of the concave structure 150 can be implemented. For example, the catalytic material 130 can be removed by cleaning the object to be processed 110 with an acid solution, an alkali solution, an organic solvent, a corrosive gas, or plasma.

[0188] Through the above processes, a component 100 having a concave structure 150 on the first surface 112 can be manufactured.

[0189] As described above, in the first processing technique, the etching rate of the object to be processed may be an extremely high speed. Therefore, the first processing technique has a side that it is difficult to form a relatively shallow concave structure 150 with an accurate depth.

[0190] However, in the first method described above, by controlling the irradiation conditions of the irradiation light in step S130, the etching rate of the object to be processed in step S140 can be adjusted.

[0191] Therefore, in the first method, regardless of the depth of the concave structure 150, a concave structure 150 close to vertical can be formed.

[0192] The depth of the concave structure 150 is, for example, 10 μm or less, and may also be 5 μm or less. Alternatively, the depth of the concave structure 150 is, for example, 20 μm or more, and may also be 100 μm or more.

[0193] (Component with a concave structure according to an embodiment of the present invention)

[0194] Next, with reference to Figures 10 to 13 A component with a concave structure according to an embodiment of the present invention will be described.

[0195] Figure 10 FIG. shows a perspective view of a component with a concave structure according to an embodiment of the present invention (hereinafter referred to as "first component 300"). In addition, Figure 11 FIG. shows Figure 10 A schematic cross-sectional view of the first component 300 shown along line A - A.

[0196] As Figure 10 shown, the first component 300 has a first surface 302 and a second surface 304 that face each other. In addition, the first component 300 has a concave structure 350 on one side of the first surface 302.

[0197] It should be noted that Figure 10 in the example shown, the first surface 302 and the second surface 304 of the first component 300 are substantially rectangular. However, the shapes of the first surface 302 and the second surface 304 are not particularly limited.

[0198] In addition, Figure 10 in the example shown, the concave structure 350 has a bottomed groove shape extending in one direction, and three concave structures 350 are arranged in parallel.

[0199] However, this is only an example, and the shape and arrangement of the concave structure 350 are not particularly limited. For example, the concave structure 350 can be a bottomed structure or a through structure. The bottomed structure can be, for example, a bottomed hole and / or a bottomed groove. In addition, the through structure can be a through hole or a through groove. Similarly, the pattern of the concave structure 350 can also be in any form.

[0200] As Figure 11As shown, the recess structure 350 has an opening 352 on the first surface 302. In addition, the recess structure 350 has a bottom surface 356 and side walls 357. In other words, the recess structure 350 is demarcated by the opening 352, the bottom surface 356, and the side walls 357.

[0201] The first component 300 can be manufactured, for example, by the above-described first method.

[0202] Here, the first component 300 has the following characteristics: the side walls 357 in the recess structure 350 are relatively smooth, with a surface roughness (arithmetic mean roughness Ra) of 5 nm or less. In particular, the surface roughness Ra of the side walls 357 is preferably 4.5 nm or less, and more preferably 4.0 nm or less.

[0203] Hereinafter, this characteristic will be described.

[0204] Referring to the above Figure 5 and Figure 6 for description, in the first method, the coated area 8a is selectively etched by the catalytic material 3 provided on the coated area 8a. In addition, as long as the relationship between the catalytic material 3 and the coated area 8a continues, the recess structure 5 will continue to progress in the depth direction.

[0205] In such an etching mechanism, the side walls 7 of the recess structure 5 generated by etching are affected by the state of the side surface of the catalytic material 3 in contact with the side walls 7.

[0206] Generally, it is considered that the side surface of the catalytic material 3 is a surface with less unevenness and relatively smooth. Reflecting the influence of the unevenness of the side surface of such a catalytic material 3, the side walls 7 of the recess structure 5 are also relatively smooth surfaces. As a result, it is considered that the side walls 7 of the recess structure 5 have a surface with significantly suppressed surface roughness.

[0207] Such smoothness is a remarkable characteristic that has not been seen in conventional etched components. For example, in the general RIE method, the side walls of the recess may have relatively large unevenness due to the influence of ion collisions during processing.

[0208] In addition, the first component 300 may have the characteristic that streak patterns exist along the depth direction on the side walls 357.

[0209] Hereinafter, referring to Figure 12 this characteristic will be described.

[0210] Figure 12 schematically shows the surface morphology of the side walls 357 of the recess structure 350. Figure 12FIG. schematically shows a part of the side wall 357 obtained when cutting in the recess structure 350 in a direction along the extension axis in the direction of the first surface 302 of the first component 300 and the extension axis in the depth direction.

[0211] As Figure 12 shown, in the first component 300, the side wall 357 of the recess structure 350 forms an uninterrupted continuous stripe (hereinafter referred to as "continuous stripe") 380 that is continuous from the opening 352 to the bottom surface 356.

[0212] It should be noted that Figure 12 FIG. shows three continuous stripes 380. However, this is only an example, and the number of continuous stripes 380 is not particularly limited.

[0213] It is considered that the pattern of such continuous stripes 380 is also formed by the above mechanism.

[0214] That is, the side wall 7 of the recess structure 5 generated by etching is affected by the state of the side surface of the catalytic material 3 in contact with the side wall 7.

[0215] In addition, in the first method, the catalytic material 3 with such unevenness on the side surface extends along the depth direction of the recess structure 5 to the bottom surface 6 of the recess structure 5. Therefore, the side wall 7 of the finally obtained recess structure 5 is also likely to form a pattern of continuous stripes 380 corresponding to such unevenness.

[0216] It is considered that as a result, stripes are generated on the side wall 357 along the depth direction.

[0217] In addition to the above-described features, the first component 300 may also have a feature that the taper angle θ of the recess structure 5 is in the range of 0° to 2°.

[0218] Hereinafter, with reference to Figure 13 this feature will be described.

[0219] Figure 13 FIG. schematically shows a cross-section of a certain recess along the extension axis L.

[0220] This recess 50 has an opening 52 on the first surface of the component. In addition, the recess 50 has a bottom surface 56 and a side wall 57.

[0221] It should be noted that Figure 13 it is not clear from the figure, but the recess 50 can be a circular hole shape or a rectangular groove shape when viewed from above. In addition, the recess 50 can be a through structure. In this case, the recess 50 can have a second opening instead of the bottom surface 56.

[0222] For such a recess 50, the taper angle θ is defined as follows:

[0223] [Mathematical formula 1]

[0224]

[0225] Here, a is the minimum size of the opening 52. Further, b is the minimum size of the bottom surface 56. Further, c is the distance between the first opening 52 and the bottom surface 56, i.e., the depth of the recess 50.

[0226] The taper angle θ represented by Equation (3) is an index of the "perpendicularity" of the recess 50. That is, the smaller the taper angle θ, the more the inclination of the side wall 57 of the recess 50 with respect to the extension axis L is suppressed. Therefore, such a recess 50 can be said to be close to a "vertical recess structure". In particular, in the first component 300, when the taper angle θ of the recess structure 350 is in the range of 0° to 2°, it can be said that the recess structure 350 has a vertical recess structure.

[0227] In the first component 300, the taper angle θ of the recess structure 350 can be 1° or less.

[0228] Further, in the first component 300, the depth of the recess structure 350 can be 1 μm or more. In particular, in the first component 300, the depth of the recess structure 350 is, for example, 2 μm or more, and preferably 3 μm or more.

[0229] (Other features of the first component 300)

[0230] The first component 300 can be a single component or can be composed of multiple components.

[0231] When the first component 300 is composed of a single component, the first component 300 is composed of an element that forms a fluoride having a boiling point of 550°C or less by reacting with fluorine (F).

[0232] For example, the first component 300 can contain at least one element selected from B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Further, the object to be processed can further contain at least one element selected from H, N, Cl, Br, and O.

[0233] When the first component 300 is composed of a single component, the first component 300 can be, for example, a quartz glass substrate or a crystal substrate.

[0234] On the other hand, when the first component 300 is composed of multiple components, the first component 300 contains an element having a fluoride boiling point of 550°C or less on the first surface 302.

[0235] As described above, such an element can be selected from, for example, B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Additionally, the first surface 302 may further contain at least one element selected from H, N, Cl, Br, and O.

[0236] For example, the first component 300 has one or more films provided on a substrate material, and the outermost film may satisfy the above characteristics. Alternatively, the plurality of films as a whole may satisfy the above characteristics.

[0237] Such a film may have, for example, SiO 2 , Si 3 N 4 and at least one of SiC. Alternatively, the substrate material may also have the above characteristics together with the film.

[0238] The first component 300 having such characteristics can be used, for example, in various applications such as MEMS devices, microfluidic devices, semiconductor devices, optical devices, metasurface devices, molds for resin molding, window glass, and cover glass.

[0239] (Method for manufacturing a component having a concave structure according to another embodiment of the present invention)

[0240] Next, with reference to Figures 14 to 16 A method for manufacturing a component having a concave structure according to another embodiment of the present invention will be described in more detail.

[0241] Figure 14 Schematically shows the flow of a method for manufacturing a component having a concave structure according to another embodiment of the present invention (hereinafter, simply referred to as "second method").

[0242] As Figure 14 shown, the second method has the following steps:

[0243] (1) Step (S210), which is a step of providing a workpiece having a first surface,

[0244] The above first surface contains an element with a fluoride boiling point of 550 °C or lower;

[0245] (2) Step (S220), which is a step of providing a catalytic material in a first region and a second region of the first surface of the workpiece,

[0246] The above catalytic material contains an organic compound having a polar functional group, and the catalytic material provided in the above second region is thicker than the catalytic material provided in the above first region;

[0247] (3) Step (S230): irradiate the above-mentioned catalytic material with irradiation light containing deep ultraviolet light (DUV) having a wavelength of 380 nm or less; and

[0248] (4) Step (S240): expose the above-mentioned object to be processed to a fluorine-containing gas at 80 °C or higher.

[0249] Hereinafter, each step will be described.

[0250] (Step S210)

[0251] First, prepare the object to be processed. It should be noted that this step S210 is the same as step S110 in the above-mentioned first method. Therefore, the detailed description of the object to be processed is omitted here.

[0252] (Step S220)

[0253] Next, catalytic materials with different thicknesses are respectively provided in at least two regions on the first surface of the object to be processed.

[0254] Figure 15 An example of the object to be processed 410 after step S220 is schematically shown in.

[0255] Figure 15 In the example shown, catalytic materials 430 are provided in three different regions on the first surface 412 of the object to be processed 410. That is, the first catalytic material 430-1 is provided in the first region 419-1 on the first surface 412 of the object to be processed 410, the second catalytic material 430-2 is provided in the second region 419-2, and the third catalytic material 430-3 is provided in the third region 419-3. In addition, the third catalytic material 430-3 is thicker than the second catalytic material 430-2, and the second catalytic material 430-2 is thicker than the first catalytic material 430-1.

[0256] It should be noted that such catalytic materials 430 with different thicknesses can be provided, for example, by a grayscale exposure method or the like. That is, when the organic compound described in the above-mentioned first method is used as the catalytic material 430, by changing the irradiation intensity during the exposure process in the plane, a pattern of catalytic materials 430 with different thicknesses can be formed in the plane in the subsequent development process.

[0257] (Step S230)

[0258] Next, irradiate the first surface 412 of the object to be processed 410 with irradiation light containing deep ultraviolet light.

[0259] It should be noted that this step S230 is the same as step S130 in the above-mentioned first method. Therefore, the detailed description is omitted here.

[0260] (Step S240)

[0261] Next, the object to be processed 410 is exposed to a fluorine-containing gas. It should be noted that this step S240 is the same as step S140 in the above-described first method. Therefore, the description of process conditions and the like is omitted here.

[0262] However, in the second method, it should be noted that concave structures with different depths can be formed through step S240.

[0263] Figure 16 An example of the cross-section of the object to be processed 410 obtained after step S240 is schematically shown in.

[0264] As Figure 16 shown, three concave structures 450-1 to 450-3 are formed on the first surface 412 of the object to be processed 410. Among them, the first concave structure 450-1 is formed in the first region 419-1, the second concave structure 450-2 is formed in the second region 419-2, and the third concave structure 450-3 is formed in the third region 419-3. In addition, the third concave structure 450-3 is formed deeper than the second concave structure 450-2, and the second concave structure 450-2 is formed deeper than the first concave structure 450-1.

[0265] It should be noted that the reason for predicting that the depths of the concave structures 450-1 to 450-3 formed after step S240 in the second method vary according to the thickness of the catalytic material 430 set in step S220 is that the amounts of polar functional groups contained in the respective catalytic materials 430-1 to 430-3 are different after DUV irradiation. That is, it is considered that the amount of polar functional groups contained in the thin catalytic material 430-1 after DUV irradiation is less than that of the thick catalytic material 430-2. It is considered that therefore, in the first region 419-1 where the thinner catalytic material 430-1 is provided, the etching rate of step S240 decreases and the concave structure 450-1 becomes shallower.

[0266] In this way, in the second method, by changing the thickness of the catalytic material 430 provided in each of the regions 419-1 to 419-3 on the first surface 412 in step S220, concave structures 450-1 to 450-3 with different depths can be formed.

[0267] Examples

[0268] Hereinafter, examples of the present invention will be described. It should be noted that in the following description, Examples 1 to 5 are examples, and Example 11 is a comparative example. In addition, Examples 21 to 26 and Examples 31 to 36 are examples, and Examples 41 and 42 are comparative examples.

[0269] (Example 1)

[0270] In the following method, a concave structure is formed on one surface (the first surface) of the object to be processed.

[0271] First, a substrate made of quartz glass is prepared as the object to be processed. In addition, a coating liquid containing a catalytic material is prepared. As the catalytic material, an i-ray resist is used, and it is mixed with solvents (ethyl lactate, n-butyl acetate) to prepare the coating liquid.

[0272] The i-ray resist used contains a novolak resin represented by the following chemical formula.

[0273]

[0274] Therefore, the i-ray resist has a hydroxyl group as a polar functional group.

[0275] Next, the coating liquid is set on the first surface of the substrate by the spin coating method. Furthermore, a pattern of the catalytic material is set on the first surface of the substrate through exposure and development processes. The pattern is a dot pattern with a diameter of about 10 μm.

[0276] Next, the pattern of the catalytic material is irradiated with irradiation light using a low-pressure mercury lamp (hereinafter referred to as "lamp A").

[0277] Lamp A is a DUV lamp with a main wavelength of 254 nm, and the irradiation dose P of the catalytic material is 72000 mJ / cm 2 .

[0278] Next, the substrate is cut into a size of about 20 mm × about 20 mm, and the cut specimen is set in the processing chamber with the catalytic material side facing up. In addition, a gas etching process of the specimen is performed in the processing chamber. As the processing gas, a mixed gas of nitrogen and hydrogen fluoride gas (HF / N 2 = 20 vol%) is used. The processing temperature is 250 °C.

[0279] The object to be processed obtained after the etching process is called "sample 1".

[0280] In sample 1, it is confirmed that a plurality of cylindrical grooves are formed as concave structures on the first surface of the substrate.

[0281] (Example 2)

[0282] A concave structure is formed on the first surface of the substrate by the same method as in Example 1. However, in this Example 2, compared with the case of Example 1, the irradiation dose P of the irradiation light is changed to form the concave structure.

[0283] The object to be processed obtained after the etching process is called "sample 2".

[0284] In sample 2, it is confirmed that a plurality of cylindrical grooves are formed as concave structures on the first surface of the substrate.

[0285] (Example 3)

[0286] The recess structure was formed on the first surface of the substrate by the same method as in Example 1. However, in this Example 3, the pattern of the catalytic material was a parallel line pattern with a width of about 10 μm and a pitch of about 30 μm.

[0287] In addition, in Example 3, a high-pressure mercury lamp (hereinafter referred to as "lamp B") was used instead of lamp A to irradiate the pattern of the catalytic material with irradiation light. Lamp B is a DUV lamp with a main wavelength of 365 nm, and the irradiation amount P on the catalytic material is 104580 mJ / cm 2 .

[0288] The processed body obtained after the etching process was referred to as "sample 3".

[0289] In sample 3, it was confirmed that a plurality of grooves extending in parallel were formed as the recess structure on the first surface of the substrate.

[0290] (Examples 4 to 5)

[0291] The recess structure was formed on the first surface of the substrate by the same method as in Example 3. However, in Examples 4 to 5, the recess structure was formed by changing the irradiation amount P of the irradiation light as compared with the case of Example 3.

[0292] The processed bodies obtained after the etching process were respectively referred to as "sample 4" to "sample 5".

[0293] In sample 4 and sample 5, it was confirmed that a plurality of grooves extending in parallel were formed as the recess structure on the first surface of the substrate.

[0294] (Example 11)

[0295] The recess structure was formed on one surface (the first surface) of the processed body by ICP-RIE method as follows.

[0296] The processed body used the same quartz glass substrate as in Example 1.

[0297] A parallel line-shaped mask pattern with a thickness of about 7 μm was formed on the first surface of the substrate by a three-layer photoresist process.

[0298] Next, the first surface of the substrate was etched by ICP-RIE method. As a result, the regions of the first surface where the mask pattern was not provided were etched to form a plurality of grooves extending in parallel.

[0299] The processed body obtained after the process was referred to as "sample 11".

[0300] The production conditions of each sample are summarized in Table 1 below.

[0301] [Table 1]

[0302]

[0303] (Evaluation)

[0304] In each sample, the cross-section of the concave structure was observed using a scanning electron microscope (SEM) to measure various dimensions. In addition, based on the obtained results, the etching rate in each sample was estimated. It should be noted that the etching rate is calculated by the depth (nm) of the concave structure / etching time (sec). Also, the taper angle θ of the sidewall of the concave structure was measured by the above method.

[0305] Table 2 below summarizes the evaluation results obtained for each sample.

[0306] [Table 2]

[0307]

[0308] From Table 2, it can be seen that in Sample 11, the taper angle θ of the concave structure is relatively large, 4° or more, forming a conical shape. In contrast, it can be seen that in Samples 1 to 5, a "vertical concave structure" with a significantly suppressed taper angle θ is formed as the concave structure.

[0309] Figures 17 to 21 Examples of the cross-sections of the concave structures obtained for Samples 1 to 5 are shown respectively.

[0310] From Table 2, it can be seen that the etching rates are different among Samples 1 to 5. For example, in Sample 1 with the largest depth of the concave part, an etching rate of 22.7 nm / sec was obtained. On the other hand, in Sample 5 with the smallest depth of the concave part, an etching rate of 4.3 nm / sec was obtained.

[0311] Figure 22 The measurement results of the etching rates obtained from Samples 1 to 5 are summarized.

[0312] Figure 22 In, the horizontal axis is the exposure dose P and the vertical axis is the etching rate. In addition, Figure 22 In, the dashed line is the result when Lamp A is used and the solid line is the result when Lamp B is used.

[0313] According to Figure 22 , it can be seen that the etching rate of the concave structure can be controlled by changing the exposure dose P in any case of the lamp. In particular, it can be seen that there is a tendency that the etching rate decreases as the exposure dose P increases.

[0314] In this way, it was confirmed that regardless of the type of lamp, the etching rate of the concave structure can be controlled by changing the exposure dose P applied to the catalytic material.

[0315] (Example 21)

[0316] A concave structure is formed on the first surface of the object to be processed by the same method as in Example 3.

[0317] However, in this Example 21, three types of catalytic materials with different thicknesses are provided in each region of the first surface according to the following steps.

[0318] First, a coating liquid containing a catalytic material is provided on the first surface of the substrate by spin coating. The catalytic material used is the above-mentioned i-ray resist.

[0319] Next, three line patterns (width 10 μm) of the catalytic material are provided on the first surface of the substrate by gray-scale exposure and subsequent development processing.

[0320] The thickness of the first line pattern is 0.13 μm, the thickness of the second line pattern is 0.54 μm, and the thickness of the third line pattern is 1.22 μm.

[0321] Then, the substrate is irradiated with DUV by the same method as in Example 3. It should be noted that the DUV irradiation uses the above-mentioned low-pressure mercury lamp (Lamp A). The irradiation dose P is 72000 mJ / cm 2 (hereinafter, referred to as "Irradiation Dose A").

[0322] Then, an etching process similar to that in Example 3 is performed. Thereby, three types of concave structures corresponding to the respective line patterns are formed.

[0323] Hereinafter, the concave structure corresponding to the first line pattern is referred to as "Sample 21-1", the concave structure corresponding to the second line pattern is referred to as "Sample 21-2", and the concave structure corresponding to the third line pattern is referred to as "Sample 21-3".

[0324] (Example 22)

[0325] Four concave structures are formed on the object to be processed by the same method as in Example 21, using four line patterns with different thicknesses of the catalytic material.

[0326] The four obtained concave structures are respectively referred to as "Sample 22-1" to "Sample 22-4".

[0327] (Example 23)

[0328] Five concave structures are formed on the object to be processed by the same method as in Example 21, using five line patterns with different thicknesses of the catalytic material. However, in this Example 23, the DUV irradiation dose P on the substrate is 144000 mJ / cm 2 (hereinafter, referred to as "Irradiation Dose B").

[0329] The obtained concave structures are respectively referred to as "Sample 23-1" to "Sample 23-5".

[0330] (Example 24)

[0331] In the same manner as in Example 21, five concave structures were formed on the object to be processed using five line patterns with different thicknesses of the catalytic material. However, in this Example 24, the irradiation dose P of DUV on the substrate was made 216000 mJ / cm 2 (hereinafter referred to as "irradiation dose C").

[0332] Each of the obtained concave structures was referred to as "Sample 24-1" to "Sample 24-5" respectively.

[0333] (Example 25)

[0334] In the same manner as in Example 21, four concave structures were formed on the object to be processed using four line patterns with different thicknesses of the catalytic material. However, in this Example 25, the irradiation dose P of DUV on the substrate was made 216000 mJ / cm 2 (hereinafter referred to as "irradiation dose D").

[0335] Each of the obtained concave structures was referred to as "Sample 25-1" to "Sample 25-4" respectively.

[0336] (Example 26)

[0337] In the same manner as in Example 25, three concave structures were formed on the object to be processed using three line patterns with different thicknesses of the catalytic material.

[0338] Each of the obtained concave structures was referred to as "Sample 26-1" to "Sample 26-3" respectively.

[0339] (Evaluation)

[0340] The etching depth of each sample was measured using SEM. In addition, the average etching rate of each sample was estimated based on the obtained results.

[0341] The thickness of the catalytic material used for each sample and the obtained evaluation results are collectively shown in Table 3 below.

[0342] [Table 3]

[0343]

[0344] In addition, Figure 23 shows the relationship between the thickness of the catalytic material and the etching rate obtained based on the evaluation results.

[0345] Based on Figure 23, it was confirmed that when comparing under the same DUV irradiation conditions, by increasing the thickness of the catalytic material, the etching rate was increased and the depth of the recessed structure obtained was increased. In addition, it was found that when the catalytic material had the same thickness, as described above, by increasing the DUV irradiation amount, there was a tendency for the etching rate to decrease.

[0346] (Example 31)

[0347] A recessed structure was formed on the first surface of the object to be processed by the same method as in Example 3.

[0348] First, a coating liquid containing a catalytic material was provided on the first surface of the substrate by a spin coating method. The catalytic material used was the above-mentioned i-ray resist. Further, a pattern of the catalytic material was provided on the first surface of the substrate by exposure and development processes. The pattern was in a line shape with a width of 7.5 μm.

[0349] Then, the substrate was irradiated with DUV by the same method as in Example 3. It should be noted that the DUV irradiation used the above-mentioned low-pressure mercury lamp (lamp A). The irradiation amount P was 36000 mJ / cm 2 .

[0350] Then, the same etching process as in Example 3 was carried out. The temperature of the etching process was 250 °C and the etching time was 500 seconds. Thereby, a recessed structure corresponding to the line pattern was formed.

[0351] The object to be processed obtained after the etching process was called "sample 31".

[0352] (Examples 32 to 36)

[0353] A recessed structure was formed on the first surface of the object to be processed by the same method as in Example 31.

[0354] However, in these examples, the width dimension of the catalytic material provided on the surface and the etching process conditions were changed.

[0355] The objects to be processed obtained after the etching process were called "sample 31" to "sample 36" respectively.

[0356] (Example 41)

[0357] A recessed structure was formed on one surface (the first surface) of the object to be processed by ICP-RIE method as follows.

[0358] The object to be processed used the same quartz glass substrate as in Example 1.

[0359] A mask pattern was formed on the first surface of the substrate by the following method.

[0360] First, a Cr film with a thickness of about 1 μm is fabricated using a sputtering process. Next, a Cr film mask pattern in the shape of parallel lines with a width of 10 μm is formed by combining photolithography using a photoresist and a wet etching method. After that, the photoresist is removed with acetone.

[0361] Next, the first surface of the substrate on which the mask pattern has been formed is etched using the ICP-RIE method.

[0362] Thereby, the regions of the first surface where the mask pattern is not provided are etched to form a plurality of grooves extending in parallel.

[0363] The processed object obtained after the treatment is referred to as "Sample 41".

[0364] (Example 42)

[0365] A concave structure is formed on one surface (the first surface) of the processed object using a UV pulsed laser as follows.

[0366] The same quartz glass substrate as in Example 1 is used as the processed object. The laser output is 15 μJ, the frequency is 40 KHz, and the scanning speed is 100 mm / s. The laser is scanned 200 times to form a groove on the first surface.

[0367] The processed object obtained after the processing is referred to as "Sample 42".

[0368] (Evaluation)

[0369] The surface roughness of the side walls of the concave structure is measured using each sample. The surface roughness of the side walls is measured using a 3D-AFM device (NX-3DM: Parksystems Corporation).

[0370] It should be noted that the surface roughness is the average value of the arithmetic mean roughness Ra (Ra ave ), and is measured as follows:

[0371] The length direction of the concave structure (the direction in which the concave structure extends when observed from the sample surface) is set as the X direction, the width direction (the direction of the dimension of about 7.5 μm) is set as the Y direction, and the depth direction is set as the Z direction;

[0372] For samples with a width of the concave structure of 7.5 μm or more, surface roughness measurement is performed on a 5-μm region along the X direction arbitrarily selected at a depth level of Z = z (i.e., the bottom surface);

[0373] Next, the depth level is decreased by only 19.5 nm (i.e., the pitch is 19.5 nm), and similarly, surface roughness measurement is performed on a 5-μm region along the X direction;

[0374] Repeat this operation successively, and finally perform surface roughness measurement on a 5-μm region along the X direction at a depth level of Z = 0 (i.e., the surface side);

[0375] Average the values obtained within the range of Z = 0.2z to 0.8z in the results of such measurement to obtain the average value Ra of the arithmetic mean roughness ave 。

[0376] On the other hand, for a sample with a recess structure width of 2.5 μm, perform surface roughness measurement on a 5-μm region along the X direction arbitrarily selected at a depth level of Z = 5 μm;

[0377] Next, reduce the depth level by only 19.5 nm (i.e., a pitch of 19.5 nm), and similarly perform surface roughness measurement on a 5-μm region along the X direction;

[0378] Repeat this operation successively, and finally perform surface roughness measurement on a 5-μm region along the X direction at a depth level of Z = 0 (i.e., the surface side);

[0379] Average the values obtained within the range of Z = 1 μm to 4 μm in the results of such measurement to obtain the average value Ra of the arithmetic mean roughness ave 。

[0380] In addition, for each sample, observe the cross section of the recess structure using a scanning electron microscope (SEM) and measure various dimensions. In addition, measure the taper angle θ of the side wall of the recess structure using the above method.

[0381] The production conditions and evaluation results of each sample are summarized in Table 4 below.

[0382] [Table 4]

[0383]

[0384] As shown in Table 4, it can be seen that in Samples 31 to 36, the taper angle θ of the recess structure is 1° or less, forming a "vertical recess structure".

[0385] In addition, it can be seen that in Samples 31 to 36, the surface roughness Ra of the side wall of the recess structure is in the range of 2.3 nm to 4.4 nm, forming an extremely smooth side surface.

[0386] In addition, in Samples 31 to 36, "continuous stripes" were confirmed to be generated on the side walls.

[0387] Figure 24The cross-sectional morphology of the concave structure of Sample 34 is shown. From this figure, it can be seen that a vertical concave structure is formed in Sample 34. In addition, it was confirmed that a vertical concave structure was formed in Samples 31 to 33 and Samples 35 to 36.

[0388] (Aspects of the present invention)

[0389] The present invention includes the following aspects.

[0390] (Aspect 1)

[0391] A method for manufacturing a component having a concave structure, comprising the following steps:

[0392] Step (1) is a step of disposing a catalytic material on a part of the first surface of the object to be processed, the first surface being composed of an element having a fluoride boiling point of 550 °C or lower, and the catalytic material containing an organic compound having a polar functional group;

[0393] Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light having a wavelength of 380 nm or less; and

[0394] Step (3) is to expose the object to be processed to a fluorine-containing gas at 80 °C or higher;

[0395] After the above step (3), a concave structure is formed on the lower side of the catalytic material on the first surface.

[0396] (Aspect 2)

[0397] According to the method described in Aspect 1, wherein the polar functional group includes at least one selected from the group consisting of a hydroxyl group, an aldehyde group, a carboxyl group, an amino group, a sulfo group, a thiol group, an amide bond, a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

[0398] (Aspect 3)

[0399] According to the method described in Aspect 1 or 2, wherein the fluorine-containing gas is hydrogen fluoride gas or fluorine gas.

[0400] (Aspect 4)

[0401] According to the method described in any one of Aspects 1 to 3, wherein the step (3) is carried out in the range of 200 °C to 450 °C.

[0402] (Aspect 5)

[0403] According to the method described in any one of Modes 1 to 4, wherein the first surface contains at least one element selected from H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

[0404] (Mode 6)

[0405] According to the method described in any one of Modes 1 to 5, wherein the concave structure includes a bottomed structure and / or a through structure.

[0406] (Mode 7)

[0407] According to the method described in Mode 6, wherein the concave structure is at least one of a bottomed hole, a through hole, a bottomed groove, and a through groove.

[0408] (Mode 8)

[0409] According to the method described in any one of Modes 1 to 7, wherein the object to be processed is composed of a single component.

[0410] (Mode 9)

[0411] According to the method described in Mode 8, wherein the object to be processed has SiO 2 .

[0412] (Mode 10)

[0413] According to the method described in any one of Modes 1 to 7, wherein the object to be processed has one or more than two layers.

[0414] (Mode 11)

[0415] A method for manufacturing a component having a concave structure, comprising the following steps:

[0416] Step (1) is a step of disposing a catalytic material in a first region and a second region of a first surface of an object to be processed, wherein the first surface is composed of an element having a fluoride boiling point of 550°C or lower, and the catalytic material contains an organic compound having a polar functional group, and the catalytic material disposed in the second region is thicker than the catalytic material disposed in the first region;

[0417] Step (2) is to irradiate the catalytic material with irradiation light including deep ultraviolet light having a wavelength of 380 nm or lower; and

[0418] Step (3) is to expose the object to be processed to a fluorine-containing gas at 80°C or higher;

[0419] After the above step (3), in the above first region of the above first surface, a first concave structure is formed on the lower side of the above catalytic material, and in the above second region, a second concave structure is formed on the lower side of the above catalytic material, and the depth of the above second concave structure is deeper than that of the above first concave structure.

[0420] (Mode 12)

[0421] According to the method described in Mode 11, wherein the above polar functional group includes at least one selected from the group consisting of a hydroxyl group, an aldehyde group, a carboxyl group, an amino group, a sulfo group, a thiol group, an amide bond, a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

[0422] (Mode 13)

[0423] According to the method described in Mode 11 or 12, wherein the above fluorine-containing gas is hydrogen fluoride gas or fluorine gas.

[0424] (Mode 14)

[0425] According to the method described in any one of Modes 11 to 13, wherein the above step (3) is carried out in the range of 200 °C to 450 °C.

[0426] (Mode 15)

[0427] According to the method described in any one of Modes 11 to 14, wherein the above first surface contains at least one element selected from the group consisting of H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

[0428] (Mode 16)

[0429] According to the method described in any one of Modes 11 to 15, wherein the above second concave structure is at least one of a bottomed hole, a through hole, a bottomed groove, and a through groove.

[0430] (Mode 17)

[0431] According to the method described in any one of Modes 11 to 16, wherein the above object to be processed is composed of a single component.

[0432] (Mode 18)

[0433] According to the method described in Mode 17, wherein the above object to be processed has SiO 2 .

[0434] (Mode 19)

[0435] The method according to any one of Modes 11 to 16, wherein the object to be processed has one or two or more layers.

[0436] (Mode 20)

[0437] A component having a concave structure on a first surface.

[0438] The concave structure is a bottomed structure and / or a through structure.

[0439] The first surface contains at least one element selected from B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

[0440] The concave structure is defined by a first opening formed in the first surface, side walls around it, and a bottom surface or a second opening.

[0441] The side walls have a surface roughness Ra of 5 nm or less.

[0442] (Mode 21)

[0443] The component according to Mode 20, wherein the side walls have at least one streak extending from the first opening to the bottom surface or the second opening.

[0444] (Mode 22)

[0445] The component according to Mode 20 or 21, wherein the first surface further has at least one of H, N, Cl, Br, and O.

[0446] (Mode 23)

[0447] The component according to any one of Modes 20 to 22, wherein when the minimum size of the first opening is a, the minimum size of the bottom surface of the concave structure is b, the depth of the concave structure is c, and the angle θ represented by the following formula (3) is called the taper angle,

[0448] [Mathematical formula 2]

[0449]

[0450] The taper angle θ satisfies 0° ≤ θ ≤ 2°.

[0451] This application claims priority based on Japanese Patent Application No. 2022-176336 filed on November 2, 2022 and Japanese Patent Application No. 2023-089928 filed on May 31, 2023, and incorporates the entire contents of the same Japanese applications by reference into this application.

[0452] Symbol Explanation

[0453] 1 Object to be processed

[0454] 3 Catalytic material

[0455] 5 Concave structure

[0456] 6 Bottom surface

[0457] 7 Side wall

[0458] 7a First side wall portion

[0459] 8a Coated area

[0460] 8b Uncoated area

[0461] 50 Concave portion

[0462] 52 Opening

[0463] 56 Bottom surface

[0464] 57 Side wall

[0465] 100 Component

[0466] 110 Object to be processed

[0467] 112 First surface

[0468] 114 Second surface

[0469] 130 Catalytic material

[0470] 131 Pattern

[0471] 140a Coated area

[0472] 140b Uncoated area

[0473] 150 Concave structure

[0474] 300 First component

[0475] 302 First surface

[0476] 304 Second surface

[0477] 350 Concave structure

[0478] 352 Opening

[0479] 356 bottom surface

[0480] 357 side wall

[0481] 380 continuous stripe

[0482] 410 object to be processed

[0483] 412 first surface

[0484] 414 second surface

[0485] 419-1 first region

[0486] 419-2 second region

[0487] 419-3 third region

[0488] 430 (430-1 to 430-3) catalytic material

[0489] 450 (450-1 to 450-3) concave structure

[0490] (a) HF molecule

[0491] (b) Si atom

[0492] (c) OH group

[0493] (d) Si-F bond

[0494] (e) -δ part

[0495] (f) +δ part

[0496] (g) H 2 O molecule

[0497] L extension axis

Claims

1. A method for manufacturing a component with a concave structure, comprising the following steps: Step (1) is a step of disposing a catalytic material on a part of the first surface of the object to be processed, where the first surface is composed of an element with a fluoride boiling point of 550 °C or lower, and the catalytic material contains an organic compound having a polar functional group; Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light with a wavelength of 380 nm or lower; and Step (3) is to expose the object to be processed to a fluorine-containing gas at 80 °C or higher; After the step (3), a concave structure is formed on the lower side of the catalytic material on the first surface.

2. The method according to claim 1, wherein, the polar functional group includes at least one selected from the group consisting of a hydroxyl group, an aldehyde group, a carboxyl group, an amino group, a sulfo group, a thiol group, an amide bond, a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

3. The method according to claim 1 or 2, wherein, the fluorine-containing gas is hydrogen fluoride gas or fluorine gas.

4. The method according to claim 1 or 2, wherein, the step (3) is carried out in the range of 200 °C to 450 °C.

5. The method according to claim 1 or 2, wherein, the first surface contains at least one element selected from the group consisting of H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

6. The method according to claim 1 or 2, wherein, the concave structure includes a bottomed structure and / or a through structure.

7. The method according to claim 6, wherein, the concave structure is at least one of a bottomed hole, a through hole, a bottomed groove, and a through groove.

8. The method according to claim 1 or 2, wherein, the object to be processed is composed of a single component.

9. The method according to claim 8, wherein, The object to be processed has SiO 2 .

10. The method according to claim 1 or 2, wherein, the object to be processed has one or two or more layers.

11. A method for manufacturing a component with a concave structure, comprising the following steps: Step (1) is a step of disposing a catalytic material on the first region and the second region of the first surface of the object to be processed, where the first surface is composed of an element with a fluoride boiling point of 550 °C or lower, the catalytic material contains an organic compound having a polar functional group, and the catalytic material disposed in the second region is thicker than the catalytic material disposed in the first region; Step (2) is to irradiate the catalytic material with irradiation light containing deep ultraviolet light with a wavelength of 380 nm or lower; and Step (3) is to expose the object to be processed to a fluorine-containing gas at 80 °C or higher; After the step (3), in the first region of the first surface, a first concave structure is formed on the lower side of the catalytic material, and in the second region, a second concave structure is formed on the lower side of the catalytic material, and the depth of the second concave structure is deeper than that of the first concave structure.

12. The method according to claim 11, wherein, The polar functional group includes at least one selected from the group consisting of a hydroxyl group, an aldehyde group, a carboxyl group, an amino group, a sulfo group, a thiol group, an amide bond, a carbonyl group, a nitro group, a cyano group, an ether bond, and an ester bond.

13. The method according to claim 11 or 12, wherein, the fluorine-containing gas is hydrogen fluoride gas or fluorine gas.

14. The method according to claim 11 or 12, wherein, the step (3) is carried out in the range of 200°C to 450°C.

15. The method according to claim 11 or 12, wherein, the first surface contains at least one element selected from the group consisting of H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

16. The method according to claim 11 or 12, wherein, the second concave structure is at least one of a bottomed hole, a through hole, a bottomed groove, and a through groove.

17. The method according to claim 11 or 12, wherein, the object to be processed is composed of a single component.

18. The method according to claim 17, wherein, The object to be processed has SiO 2 .

19. The method according to claim 11 or 12, wherein, the object to be processed has one or more than two layers.

20. A component having a concave structure on a first surface, the concave structure being a bottomed structure and / or a through structure, the first surface contains at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, the concave structure is defined by a first opening formed on the first surface, a surrounding side wall, and a bottom surface or a second opening, the side wall has a surface roughness of 5 nm or less, i.e., an arithmetic mean roughness Ra.

21. The component according to claim 20, wherein, the side wall has at least one streak extending from the first opening to the bottom surface or the second opening.

22. The component according to claim 20 or 21, wherein, the first surface further contains at least one of H, N, Cl, Br, and O.

23. The component according to claim 20 or 21, wherein, when the minimum size of the first opening is set as a, the minimum size of the bottom surface of the concave structure is set as b, the depth of the concave structure is set as c, and the angle θ represented by the following formula (1) is called the taper angle, the taper angle θ is 0° ≤ θ ≤ 2°.

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