Thin film, preparation method of thin film, photoelectric device and electronic equipment

Abstract

The invention provides a thin film, a preparation method of the thin film, a photoelectric device and electronic equipment, materials of the thin film comprise a metal oxide material and cross-linked gelatin, the surface roughness of the thin film can be reduced, the density of the thin film can be improved, and the water resistance of the thin film can be improved; the photoelectric device comprises a plurality of functional sub-layers, and at least one functional sub-layer comprises a metal oxide material and cross-linked gelatin, so that the photoelectric property of the photoelectric device is improved, and the service life of the device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a thin film, a method for preparing the thin film, an optoelectronic device and an electronic device. Background Art

[0002] Metal oxides refer to compounds formed by the combination of metal elements and oxygen elements. After nano-sizing, metal oxides have the characteristics of small size, large specific surface area, and many surface active centers, thus having small size effect, surface and interface effect, quantum dot size effect and macroscopic quantum tunneling effect. Therefore, they are widely used in high-efficiency catalysts, batteries, light-emitting devices, supercapacitors, energy storage devices, magnetic devices and optical devices.

[0003] Metal oxides have the characteristics of small size, large specific surface area, and surface defects, which give them good electrical conductivity. Based on the preparation method of metal oxides (such as the solution-gel method), the surface of the metal oxides will be connected with ligands (such as hydroxyl groups, carboxyl groups, etc.). When the metal oxides are prepared into thin films by the solution method, the metal oxides are prone to "agglomeration". Due to the presence of ligands, the adjacent metal oxides are not arranged closely, resulting in problems such as high surface roughness and poor density of the film. Summary of the invention

[0004] The present application provides a thin film, a method for preparing the thin film, a photoelectric device and an electronic device to improve the density of the thin film.

[0005] The technical solution of this application is as follows:

[0006] In a first aspect, the present application provides a film, the material of which includes a metal oxide material and cross-linked gelatin.

[0007] In a second aspect, the present application provides a method for preparing a thin film, comprising the following steps:

[0008] Providing a first dispersion liquid including a metal oxide material and gelatin, mixing the first dispersion liquid and a cross-linking agent to perform a gelatin cross-linking reaction to obtain a mixture; and

[0009] The mixture is deposited and dried to obtain a thin film.

[0010] In a third aspect, the present application provides an optoelectronic device, the optoelectronic device comprising:

[0011] A first electrode and a second electrode disposed opposite to each other; and

[0012] A functional layer is disposed between the first electrode and the second electrode;

[0013] Wherein, the functional layer includes multiple functional sublayers; at least one of the functional sublayers includes a metal oxide material and cross-linked gelatin, and / or at least one of the functional sublayers is prepared by any one of the film preparation methods described in the second aspect.

[0014] In a fourth aspect, the present application provides an electronic device, comprising an optoelectronic device as described in any one of the third aspects.

[0015] The present application provides a thin film, a method for preparing the thin film, an optoelectronic device and an electronic device, which have the following technical effects:

[0016] The materials of the film include metal oxide materials and cross-linked gelatin. On the one hand, since cross-linked gelatin is an organic compound with a network structure, it can improve the film-forming quality, thereby reducing the surface roughness of the film; on the other hand, the metal oxide material is distributed in the network structure formed by the cross-linked gelatin, and the cross-linked gelatin can fill the gaps between adjacent metal oxides, thereby improving the density of the film, which is beneficial to improving the water barrier properties of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 It is a schematic flow chart of a method for preparing a thin film provided in the present application.

[0019] Figure 2 It is a schematic diagram of the structure of a photoelectric device provided in this application.

[0020] Figure 3 This is a scanning electron microscope image of the film prepared in Film Example 1 of the present application.

[0021] Figure 4 This is a scanning electron microscope image of the film prepared in the film comparative example 1 of the present application.

[0022] Figure 5 It is an electroluminescent morphology image of the encapsulated optoelectronic devices in Device Example 1, Device Example 8 and Device Comparative Example 1 of the present application after being placed in an environment with a temperature of 25° C. and a relative humidity of 80% for 30 days. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0024] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to this application. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0025] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the numbered ranges, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0026] The term "including" means "including but not limited to".

[0027] The term "at least one" means one or more, and "multiple" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or plural, respectively.

[0028] The selection scope of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the said any and all combinations include any combination of two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions of A, B and A+B. For another example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the combination of four items of A, B, C, and D (that is, the technical solution connected by "logical and").

[0029] The term "particle size" refers to the diameter of a nanoparticle.

[0030] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on the side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on the side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or as other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0031] An embodiment of the present application provides a thin film, the material of which includes a metal oxide material and cross-linked gelatin.

[0032] In order to further improve the density of the film and reduce the surface roughness of the film, in some embodiments of the present application, the degree of cross-linking of the cross-linked gelatin is 60% to 100%, for example, it can be 60%, 70%, 80%, 90%, 100% or a value between any two of the aforementioned values.

[0033] In some embodiments of the present application, the material of the film consists of a metal oxide material and cross-linked gelatin.

[0034] In some embodiments of the present application, cross-linked gelatin is a substance obtained by treating gelatin with a cross-linking agent, and the mass ratio of gelatin to the metal oxide material is 1:(10-100), such as 1:10, 1:30, 1:50, 1:80, 1:100 or a value between any two of the foregoing ratios. The cross-linking agent is selected from one or more of aldehyde compounds, 1-ethyl-(3-dimethylaminopropyl) carbodiimide, dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-hydroxysuccinimide, Woodward's reagent K and N,N'-carbonyldiimidazole; wherein the aldehyde compound is selected from one or more of formaldehyde, glutaraldehyde and glyceraldehyde.

[0035] In the film, the metal oxide material may be in nano form, such as nanoparticles, nanorods or nanosheets. In some embodiments of the present application, the metal oxide material is in nanoparticle form, and the average particle size of the metal oxide material is 2nm to 15nm, such as 2nm, 5nm, 7nm, 10nm, 12nm, 15nm or a value between any two of the foregoing values.

[0036] In some embodiments of the present application, the metal element in the metal oxide material is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals. Further, the metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide, wherein the non-doped first metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 、NiO、MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, and / or the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 、NiO、MoO 3 , WO 3 、V 2 O5 Cr 2 O 3 , CuO and Cu 2 O, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, Ni, Mo, W, V, Cr, Cu and Pt.

[0037] In the film of the embodiment of the present application, on the one hand, since the cross-linked gelatin is an organic compound with a network structure, the film-forming quality can be improved, thereby reducing the surface roughness of the film; on the other hand, the metal oxide material is distributed in the network structure formed by the cross-linked gelatin, and the cross-linked gelatin can fill the gaps between adjacent metal oxides, thereby improving the density of the film, which is beneficial to improving the water barrier properties of the film.

[0038] The present application provides a method for preparing a thin film, which can be used to prepare any of the above-mentioned thin films, such as Figure 1 As shown, the method for preparing the film comprises the following steps:

[0039] S1, providing a first dispersion liquid including a metal oxide material and gelatin, mixing the first dispersion liquid and a cross-linking agent to perform a gelatin cross-linking reaction to obtain a mixture;

[0040] S2, depositing the mixture and drying it to obtain a thin film.

[0041] In the method for preparing the film of the embodiment of the present application, a mixture containing cross-linked gelatin and a metal oxide material is first prepared, and then the mixture is prepared into a thin film by a solution method. On the one hand, since the cross-linked gelatin is an organic compound with a network structure, the film-forming quality can be improved, thereby reducing the surface roughness of the film; on the other hand, the metal oxide material is distributed in the network structure formed by the cross-linked gelatin, and the cross-linked gelatin can fill the gaps between adjacent metal oxides, thereby improving the density of the film, which is beneficial to improving the water barrier properties of the film.

[0042] Specifically, in step S1, gelatin is dissolved in a first dispersion, and the preparation method of the first dispersion may include the steps of: first dispersing the metal oxide material and gelatin in a first solvent at room temperature, and then heating to dissolve the gelatin in the first solvent; the preparation method of the second dispersion may also include the steps of: first dispersing the metal oxide material in a second solvent to obtain a second dispersion, and dissolving the gelatin in a third solvent to obtain a gelatin solution, and then mixing the second dispersion and the gelatin solution to obtain the first dispersion. The first solvent and the third solvent are, for example, independently selected from one or more of water, glycerol, chloroform and ether, and the second solvent is, for example, selected from one or more of water and aliphatic alcohol compounds having 1 to 10 carbon atoms. As an example: the first solvent and the third solvent are respectively selected from water or a mixture of water and glycerol, and the second solvent is selected from glycerol or a mixture of water and glycerol.

[0043] In step S1, the metal oxide material may be in nano form, such as nanoparticles, nanorods or nanosheets. In some embodiments of the present application, the metal oxide material is in nanoparticle form, and the average particle size of the metal oxide material is 2nm to 15nm, such as 2nm, 5nm, 7nm, 10nm, 12nm, 15nm or a value between any two of the foregoing values.

[0044] In some embodiments of the present application, the metal element in the metal oxide material is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals. Further, the metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide, wherein the non-doped first metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 、NiO、MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, and / or the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO2 、NiO、MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, Ni, Mo, W, V, Cr, Cu and Pt.

[0045] In order to improve the conductivity, density and surface smoothness of the film, in some embodiments of the present application, in the first dispersion, the mass ratio of gelatin to metal oxide material is 1:(10-100), for example, it can be 1:10, 1:30, 1:50, 1:80, 1:100 or a value between any two of the foregoing ratios.

[0046] In some embodiments of the present application, the cross-linking agent is selected from one or more of aldehyde compounds, 1-ethyl-(3-dimethylaminopropyl)carbodiimide, dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-hydroxysuccinimide, Woodward's reagent K and N,N'-carbonyldiimidazole, wherein the aldehyde compounds include but are not limited to one or more of formaldehyde, glutaraldehyde and glyceraldehyde.

[0047] In order to further improve the mechanical properties and thermal stability of cross-linked gelatin, in some embodiments of the present application, in the step of mixing the first dispersion and the cross-linking agent to carry out the gelatin cross-linking reaction, the mass ratio of the cross-linking agent to the gelatin in the first dispersion is 1: (100-500), for example, it can be 1: 100, 1: 200, 1: 300, 1: 400, 1: 500 or a value between any two of the aforementioned values; and / or, the cross-linking reaction is carried out at a temperature of 40° C. to 50° C.; and / or, the cross-linking reaction time is 5 min to 60 min. It should be noted that the amount of cross-linking agent added and the cross-linking reaction can be adjusted according to actual conditions, and it is only necessary to ensure that the cross-linking degree of the cross-linked gelatin obtained is 60% to 100%.

[0048] In step S2, the deposition method of the mixture includes but is not limited to one or more of spin coating, printing, inkjet printing, doctor blading, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating and strip coating.

[0049] In step S2, the drying treatment includes but is not limited to one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment and microwave irradiation annealing treatment.

[0050] The present application also provides a photoelectric device, which includes but is not limited to a light emitting device, a photovoltaic cell or a photodetector. Figure 2 As shown, the photoelectric device 10 includes a first electrode 101, a second electrode 102 and a functional layer 103, wherein the functional layer 103 is disposed between the first electrode 101 and the second electrode 102. The functional layer 103 includes a plurality of stacked functional sublayers, wherein the plurality of functional sublayers include but are not limited to one or more of an electronic functional layer and a hole functional layer, at least one of the functional sublayers includes a metal oxide material and cross-linked gelatin, and / or at least one of the functional sublayers is prepared by any of the above-mentioned thin film preparation methods.

[0051] In the optoelectronic device of the embodiment of the present application, the functional sublayer including the metal oxide material and the cross-linked gelatin has a higher density, a lower surface roughness and good water resistance, thereby improving the optoelectronic performance and device life of the optoelectronic device.

[0052] In some embodiments of the present application, the materials of the first electrode 101 and the second electrode 102 are independently selected from one or more of metals, carbon materials and third metal oxides, wherein the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, the carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fibers, the third metal oxide may be doped or undoped, the doped third metal oxide includes but is not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO), and the undoped third metal oxide includes but is not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0053] In some embodiments of the present application, see Figure 2 The plurality of functional sublayers include an electronic functional layer 1031, the electronic functional layer 1031 includes a metal oxide material and cross-linked gelatin, and / or the electronic functional layer 1031 is prepared by any of the above-mentioned thin film preparation methods. The metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide, and the non-doped first metal oxide includes but is not limited to ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3and ZrO 2 One or more of the following: the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is, but is not limited to, ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 or ZrO 2 The first doping element includes, but is not limited to, one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn. The molar percentage of the first doping element in the doped second metal oxide is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30% or not higher than 50%. The doped second metal oxide includes, but is not limited to, one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0054] It should be noted that the electronic functional layer 1031 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 1031 is, for example, 10nm to 100nm. When the electronic functional layer 1031 is a multi-layer structure, the electronic functional layer 1031 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 1031 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, one of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the electron injection layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including the electron transport layer and the hole blocking layer, the electron transport layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including the electron injection layer and the electron transport layer, the electron injection layer is closer to the cathode than the electron transport layer. When the electronic functional layer 1031 is a multi-layer structure, the material of one layer, part of the layers, or all of the layers may include metal oxide materials and cross-linked gelatin.

[0055] In some embodiments of the present application, see Figure 2 The plurality of functional sublayers include a hole functional layer 1032, the hole functional layer 1032 includes a metal oxide material and cross-linked gelatin, and / or the electronic functional layer 1031 is prepared by any of the above-mentioned thin film preparation methods. The metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide; the non-doped first metal oxide is selected from NiO, MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O; and / or, the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is, for example, selected from NiO, MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, the first doping element is for example selected from one or more of Ni, Mo, W, V, Cr, Cu and Pt. Optionally, the molar amount of the first doping element accounts for no more than 50% of the total molar amount of the doped second metal oxide.

[0056] It should be noted that the hole functional layer 1032 may be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 1032 is, for example, 10 nm to 100 nm. When the hole functional layer 1032 is a multi-layer structure, the hole functional layer 1032 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 1032 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, one of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the hole injection layer is closer to the anode than the electron blocking layer; for the hole functional layer 1032 including the hole transport layer and the electron blocking layer, the hole transport layer is closer to the anode than the electron blocking layer; for the hole functional layer 1032 including the hole injection layer and the hole transport layer, the hole injection layer is closer to the anode than the hole transport layer. When the hole function layer 1032 is a multi-layer structure, the material of one layer, part of the layers or all of the layers may include metal oxide material and cross-linked gelatin.

[0057] In other embodiments of the present application, the hole functional layer 1032 does not include metal oxide materials and cross-linked gelatin, and the hole functional layer 1032 is not prepared by any of the above-mentioned thin film preparation methods. The material of the hole functional layer 1032 includes but is not limited to one or more of a non-doped first inorganic compound, a doped second inorganic compound, and an organic compound. The organic compounds include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), poly Aniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N, N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [( 9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4"-tris(carbazol-9-yl)triphenylamine amine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (referred to as Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2 ,4,6-trimethylphenyl)amine] (abbreviated as PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Spiro-omeTAD, CAS No. 207739-72-8) One or more; and / or, the non-doped first inorganic compound includes but is not limited to graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO, 3 ), tungsten oxide (such as WO 3 ), vanadium oxide (such as V 2 O 5 ), P-type gallium nitride, chromium oxide (such as Cr 2 O 3 ), copper oxide (such as CuO or Cu 2 O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS 2 ) and tungsten sulfide (such as WS 2 ) or more; and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound including but not limited to graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO 3 ), tungsten oxide (such as WO 3 ), vanadium oxide (such as V 2 O 5 ), P-type gallium nitride, chromium oxide (such as Cr 2 O 3 ), copper oxide (such as CuO or Cu 2 O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS 2 ) and tungsten sulfide (such as WS 2 ), and / or the second doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0058] It is understood that when the hole function layer 1032 includes multiple materials and the hole function layer 1032 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer. Figure 2As shown, when the hole functional layer 1032 is composed of a stacked hole injection layer 10321 and a hole transport layer 10322, the material of the hole functional layer 1032 includes PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers, the material of the hole injection layer 10321 is PEDOT:PSS, and the material of the hole transport layer 10322 is TFB.

[0059] In some embodiments of the present application, the optoelectronic device 10 is a light-emitting device, and the plurality of functional sublayers include a light-emitting layer. For the optoelectronic device 10 including a hole functional layer and an electron functional layer, the light-emitting layer is disposed between the hole functional layer and the electron functional layer, and the hole functional layer is closer to the anode than the electron functional layer. For example, Figure 2 The photoelectric device 10 is a positive structure, the first electrode 101 is an anode and the second electrode 102 is a cathode, and in the straight line direction from the first electrode 101 to the second electrode 102, the hole functional layer 1032, the light-emitting layer 10333 and the electron functional layer 1031 are arranged in sequence.

[0060] The material of the light-emitting layer 10333 includes one or more of organic light-emitting materials and light-emitting quantum dots. The organic light-emitting materials include, but are not limited to, 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives. One or more of its derivatives.

[0061] The luminescent quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the luminescent quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell structure quantum dots include one or more shell layers. The average particle size of the luminescent quantum dots may be 2 nm to 20 nm, for example, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0062] For single-component quantum dots and core-shell structured quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structured quantum dots, or the material of the shell of the core-shell structured quantum dots includes but is not limited to one or more of II-VI group compounds, III-VI group compounds, III-V group compounds, IV-VI group compounds, and I-III-VI group compounds. Wherein, the II-VI group compounds include but are not limited to one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and / or the III-VI group compounds include but are not limited to In 2 S 3 、In 2 Se 3 、InGaS 3 and InGaSe 3One or more of, and / or the III-V group compounds include but are not limited to GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaI The invention relates to one or more of nPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and / or the IV-VI group compounds include but are not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and / or the I-III-VI group compounds include but are not limited to one or more of AgInS, AgInS 2 、CuInS、CuInS 2 、AgGaS 2 、CuGaS 2 、CuGaO 2 ,AgGaO 2 、AgAlO 2 、AgInGaS 2 CuInGaS 2 One or more of .

[0063] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX 3 , where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I- .

[0064] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX 3 , wherein C is a carboxamidino group, M is a divalent metal cation, M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0065] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX 3 , wherein B is selected from organic amine cations, including but not limited to CH 3 (CH 2 ) n-2 NH 3+ (n≥2) or NH 3 (CH 2 ) n NH 3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0066] It should be noted that when the material of the light-emitting layer 10333 includes light-emitting quantum dots, the surface of the light-emitting quantum dots may also be connected with ligands. The ligands include but are not limited to C 1 ~C 30 Fatty acid ligands, C6 ~C 30 Aromatic carboxylic acid ligands, C 1 ~C 30 Aliphatic thiol ligands, C 6 ~C 30 Thiol aromatic ligands, C 1 ~C 30 Fatty amine ligands, C 6 ~C 30 Aromatic amine ligands, C 1 ~C 30 Aliphatic phosphine ligands, C 6 ~C 30 Aromatic phosphine ligands and C 6 ~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0067] Among them, C 1 ~C 30 The fatty carboxylic acid ligands include, but are not limited to, one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, lignoceric acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C 6 ~C 30 The aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, bibenzoic acid, and 1-naphthoic acid. 1 ~C 30 The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. 6 ~C 30 The thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethylthiol, and p-terphenyl-4,4"-dithiol. 1 ~C 30 The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine, C 6 ~C 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline and benzidine. 1 ~C 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, C 6~C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C 6 ~C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and diphenyl ethyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I or -Br.

[0068] It should be noted that in the existing quantum dot light-emitting diodes, the density of the cathode and the electronic functional layer is poor, and external water molecules can enter the light-emitting layer through the electronic functional layer, and the light-emitting layer has poor tolerance to water. In an environment where water exists, the excitons in the light-emitting layer are rapidly quenched, resulting in a sharp decline in the performance of the quantum dot light-emitting diode, which in turn has an adverse effect on the device efficiency and device life of the quantum dot light-emitting diode, and the intrusion of water will cause black spots to form in the light-emitting area of ​​the quantum dot light-emitting diode, reducing the uniformity of electroluminescence. In the optoelectronic device of the embodiment of the present application, the functional sublayer including the metal oxide material and the cross-linked gelatin has a higher density, lower surface roughness and good water resistance. The functional sublayer can be an electronic functional layer and / or a hole functional layer, which can improve the problem of external water molecules invading the light-emitting layer, thereby improving the performance stability of the optoelectronic device.

[0069] In addition, in addition to the functional sublayers including metal oxide materials and cross-linked gelatin, the preparation methods of other functional sublayers in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of solution methods include but are not limited to spin coating, printing, inkjet printing, scraping, printing, dip-pull, immersion, spraying, rolling, casting, slit coating and strip coating.

[0070] The present application also provides an electronic device, which includes any optoelectronic device described in any one of the embodiments of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device, or a wearable device.

[0071] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0072] Film Example 1

[0073] This embodiment provides a method for preparing a film and the film obtained therefrom, wherein the materials of the film include ZnO and cross-linked gelatin, wherein the ZnO is in the form of nanosheets, and the cross-linked gelatin is a material obtained by cross-linking gelatin with glutaraldehyde.

[0074] The method for preparing the film in this embodiment comprises the following steps:

[0075] S1.1, dispersing 1.5 g of nano-sheet ZnO in 50 mL of a first solvent (mixed with water and glycerol in a volume ratio of 1:1) to obtain a second dispersion with a concentration of 30 mg / mL;

[0076] S1.2, at 25°C, disperse 3.75 g of gelatin particles in 50 mL of deionized water, let it stand for 30 min to swell, and then place it in a 40°C water bath and stir until the gelatin is completely dissolved to obtain a gelatin solution; then, mix the gelatin solution and the second dispersion to obtain a first dispersion, wherein the mass ratio of gelatin to ZnO in the first dispersion is 1:60;

[0077] S1.2, under the condition of a constant temperature water bath at 40° C., add a 0.5% by mass aqueous solution of glutaraldehyde to the first dispersion of step S1.2 to cause gelatin to undergo a cross-linking reaction, the mass ratio of glutaraldehyde to gelatin being 1:280, stirring for 5 minutes and then standing for 30 minutes (the total time for the cross-linking reaction is 35 minutes) to obtain a mixture;

[0078] S1.4. Provide a substrate, spin-coat the mixture on one side of the substrate, and then place it in a drying oven for drying to solidify into a film, thereby obtaining a thin film with an average thickness of 50 nm.

[0079] Film Example 2

[0080] This embodiment provides a method for preparing a thin film and the thin film prepared therefrom. Compared with the method for preparing the thin film in Thin Film Embodiment 1, the difference in the method for preparing the thin film in this embodiment is that "the mass ratio of gelatin to ZnO in the first dispersion is 1:60" in step S1.2 is replaced by "the mass ratio of gelatin to ZnO in the first dispersion is 1:10".

[0081] Film Example 3

[0082] This embodiment provides a method for preparing a thin film and a thin film prepared therefrom. Compared with the method for preparing a thin film in Thin Film Embodiment 1, the difference in the method for preparing a thin film in this embodiment is that "the mass ratio of gelatin to ZnO in the first dispersion is 1:60" in step S1.2 is replaced by "the mass ratio of gelatin to ZnO in the first dispersion is 1:100".

[0083] Film Example 4

[0084] This embodiment provides a method for preparing a thin film and a thin film prepared therefrom. Compared with the method for preparing a thin film in Thin Film Embodiment 1, the difference in the method for preparing a thin film in this embodiment is that "the mass ratio of gelatin to ZnO in the first dispersion is 1:60" in step S1.2 is replaced with "the mass ratio of gelatin to ZnO in the first dispersion is 1:30".

[0085] Film Example 5

[0086] The present embodiment provides a method for preparing a film and a film obtained therefrom. Compared with the method for preparing a film in film embodiment 1, the difference in the method for preparing a film in the present embodiment is that the step S1.3 "adding 0.5% by mass of a glutaraldehyde aqueous solution to the first dispersion in step S1.2 to allow gelatin to undergo a cross-linking reaction, and the mass ratio of glutaraldehyde to gelatin is 1:280" is replaced with "adding 0.5% by mass of a formaldehyde aqueous solution to the first dispersion in step S1.2 to allow gelatin to undergo a cross-linking reaction, and the mass ratio of formaldehyde to gelatin is 1:280".

[0087] Film Example 6

[0088] This embodiment provides a method for preparing a film and a film prepared therefrom. Compared with the method for preparing a film in film embodiment 1, the difference in the method for preparing a film in this embodiment is that: the step S1.3 "adding a 0.5% by mass aqueous solution of glutaraldehyde to the first dispersion in step S1.2 to allow gelatin to undergo a cross-linking reaction, and the mass ratio of glutaraldehyde to gelatin is 1:280" is replaced with "adding a 0.5% by mass aqueous solution of glyceraldehyde to the first dispersion in step S1.2 to allow gelatin to undergo a cross-linking reaction, and the mass ratio of glyceraldehyde to gelatin is 1:280".

[0089] Film Example 7

[0090] The present embodiment provides a method for preparing a film and a film obtained therefrom. Compared with the method for preparing a film in film embodiment 1, the difference of the method for preparing a film in the present embodiment is that: the step S1.3 "adding a 0.5% by mass glutaraldehyde aqueous solution to the first dispersion of step S1.2 to cause gelatin to undergo a cross-linking reaction, and the mass ratio of glutaraldehyde to gelatin is 1:280" is replaced with "adding a cross-linking agent solution to the first dispersion of step S1.2, the solvent of the cross-linking agent solution is ethanol, the solute of the cross-linking agent solution consists of 1-ethyl-(3-dimethylaminopropyl) carbodiimide and N-hydroxysuccinimide, the mass percentage of the solute is 0.5%, the molar ratio of 1-ethyl-(3-dimethylaminopropyl) carbodiimide to N-hydroxysuccinimide is 5:1, and the mass ratio of 1-ethyl-(3-dimethylaminopropyl) carbodiimide to gelatin is 1:280".

[0091] Film Example 8

[0092] This embodiment provides a method for preparing a thin film and a thin film prepared therefrom. Compared with the method for preparing a thin film in the thin film embodiment 1, the difference between the method for preparing a thin film in this embodiment is that the "nano-sheet ZnO" in step S1.1 and step S1.2 is replaced by "Zn 0.85 Mg 0.15 O nanoparticles", that is, the material of the film in this embodiment includes "Zn 0.85 Mg 0.15 O and cross-linked gelatin.

[0093] Among them, Zn 0.85 Mg 0.15 The preparation method of O comprises the following steps:

[0094] S8.1. Disperse 0.03 mol of zinc acetate dihydrate and 0.0045 mol of anhydrous magnesium acetate in 200 mL of N,N-dimethylformamide under nitrogen flow, and stir for 1 h to obtain a zinc source solution;

[0095] S8.2, dissolve 0.06 mol of potassium hydroxide in 100 mL of ethanol and stir for 1 h to obtain alkaline solution;

[0096] S8.3, under the condition of nitrogen, injecting the alkali solution into the zinc source solution at an injection rate of 10 mL / min, stirring for 1 hour to carry out a mixing reaction, and the mixing reaction is carried out at 30° C. to obtain a reaction solution;

[0097] S8.4, add ethyl acetate to the reaction solution to generate a precipitate, then centrifuge at 12000 r / min for 3 min, remove the supernatant and collect to obtain a first precipitate, disperse the first precipitate in ethanol to obtain a first material solution; then, add ethyl acetate to the first material solution to generate a precipitate, then centrifuge at 12000 r / min for 3 min, remove the supernatant and collect to obtain a second precipitate, disperse the second precipitate in ethanol to obtain a second material solution; add ethanolamine to the second material solution (the volume ratio of the second material solution: ethanolamine is 3:1) and mix well, then add ethyl acetate until the solution turns slightly white, centrifuge at 12000 r / min for 3 min, remove the supernatant and collect to obtain a third precipitate, wherein the third precipitate is Zn 0.85 Mg 0.15 O nanoparticles.

[0098] Film Example 9

[0099] This embodiment provides a method for preparing a thin film and a thin film prepared therefrom. Compared with the method for preparing the thin film in thin film embodiment 1, the difference in the method for preparing the thin film in this embodiment is that the "nano-sheet ZnO" in step S1.1 and step S1.2 is replaced with "NiO nanoparticles", that is, the material of the thin film in this embodiment includes NiO and cross-linked gelatin.

[0100] Wherein, the preparation method of NiO comprises the following steps:

[0101] S9.1. Dissolve 1 mol of nickel acetate tetrahydrate in 10 mL of ethylene glycol by ultrasonication under nitrogen flow, and stir for 1 h to obtain a nickel acetate solution with a concentration of 0.1 mol / L.

[0102] S9.2, dissolve 0.5 mol of potassium hydroxide in 10 mL of ethanol and stir for 1 h to obtain alkaline solution;

[0103] S9.3, under the condition of nitrogen, inject the alkali solution prepared in step S8.2 into the nickel acetate solution prepared in step S9.1 at an injection rate of 10 mL / min, stir for 1 hour to carry out a mixed reaction, and the mixed reaction is carried out at 40° C. to obtain a reaction solution;

[0104] S9.4, refer to step S8.4, and the third precipitate obtained is NiO nanoparticles.

[0105] Film Comparative Example 1

[0106] This comparative example provides a method for preparing a thin film and the thin film obtained therefrom, wherein the method for preparing the thin film comprises the steps of: providing a substrate, spin coating the second dispersion obtained in step S1.1 of thin film example 1 on one side of the substrate, and then subjecting the substrate to a constant temperature heat treatment at 80° C. to solidify the dispersion into a film, thereby obtaining a thin film.

[0107] Film Comparative Example 2

[0108] This comparative example provides a method for preparing a thin film and the thin film obtained therefrom. The method for preparing the thin film comprises the steps of: dispersing the third precipitate obtained in step S9.4 of thin film example 9 in chlorobenzene to obtain a NiO-chlorobenzene solution with a concentration of 30 mg / mL; providing a substrate, spin coating 30 mg / mL of NiO-chlorobenzene solution on one side of the substrate, and then subjecting the substrate to a constant temperature heat treatment at 170°C to solidify the film to obtain a thin film.

[0109] Device Example 1

[0110] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode of an upright structure, such as Figure 2 As shown, the optoelectronic device 10 includes a first electrode 101, a hole functional layer 1032, a light emitting layer 1033, an electronic functional layer 1031 and a second electrode 102 which are stacked in sequence. The first electrode 101 is an anode and the second electrode 102 is a cathode; the hole functional layer 1032 is composed of a stacked hole injection layer 10321 and a hole transport layer 10322, and the hole injection layer 10321 is closer to the first electrode 101 than the hole transport layer 10322; the electronic functional layer 1031 is a single-layer structure. The light emitting area of ​​the optoelectronic device 10 is 0.04 cm 2 .

[0111] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0112] The material of the first electrode 101 is ITO, and the average thickness of the first electrode 101 is 30 nm;

[0113] The material of the second electrode 102 is Ag, and the average thickness of the second electrode 102 is 60 nm;

[0114] The material of the light-emitting layer 1033 is CdSe / ZnS quantum dots, the light-emitting color is green, and the average thickness of the light-emitting layer 1033 is 30 nm;

[0115] The electronic functional layer 1031 is the thin film prepared in thin film embodiment 1;

[0116] The material of the hole injection layer 10321 is PEDOT:PSS, and the thickness of the hole injection layer 10321 is 30 nm;

[0117] The material of the hole transport layer 10322 is TFB, and the thickness of the hole transport layer 10322 is 35 nm.

[0118] S10.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, acetone for 15 minutes, ethanol for 15 minutes, and isopropanol for 15 minutes, and then dry and perform ultraviolet-ozone surface treatment for 20 minutes to obtain a substrate including a first electrode;

[0119] S10.2, in an air environment at room temperature and pressure, spin-coat a 2.8% by mass PEDOT:PSS aqueous solution on the side of the first electrode away from the substrate, and then heat-treat at 150° C. to solidify the film to obtain a hole injection layer;

[0120] S10.3, in a nitrogen environment at room temperature and pressure, spin-coating a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the first electrode, and then placing it in a nitrogen atmosphere at 170° C. for constant temperature heat treatment to solidify the film to obtain a hole transport layer;

[0121] S10.4. In a nitrogen environment at room temperature and pressure, a CdSe / ZnS quantum dot-n-octane solution with a concentration of 25 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 80° C. in a nitrogen atmosphere to solidify the film to obtain a light-emitting layer;

[0122] S10.5. Under a nitrogen environment at room temperature and pressure, an electronic functional layer is formed on a side of the light-emitting layer away from the hole transport layer by referring to the preparation method of the thin film in Thin Film Example 1;

[0123] S10.6, placing the laminated structure after step S10.5 in a vacuum no higher than 3×10 -4 In the evaporation chamber of Pa, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer using a thermal evaporation process to obtain a second electrode, and then the optoelectronic device is encapsulated using acid-free epoxy resin LOCTITE 3335.

[0124] Device Example 2

[0125] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by the thin film prepared in thin film embodiment 2.

[0126] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 2 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0127] Device Example 3

[0128] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by the thin film prepared in thin film embodiment 3.

[0129] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 3 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0130] Device Example 4

[0131] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by a thin film prepared in thin film embodiment 4.

[0132] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 4 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0133] Device Example 5

[0134] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by a thin film prepared in thin film embodiment 5.

[0135] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 5 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0136] Device Example 6

[0137] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by a thin film prepared in thin film embodiment 6.

[0138] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 6 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0139] Device Example 7

[0140] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by a thin film prepared in thin film embodiment 7.

[0141] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 7 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0142] Device Example 8

[0143] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the photoelectric device in this embodiment is different in that the electronic functional layer is replaced by a thin film prepared in thin film embodiment 8.

[0144] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 8 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0145] Device Example 9

[0146] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the difference of the photoelectric device in this embodiment is that the hole transport layer is replaced by the thin film prepared in thin film embodiment 9.

[0147] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S10.3 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 9 to form a hole transport layer on the side of the hole injection layer away from the first electrode."

[0148] Device Example 10

[0149] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in device embodiment 1, the difference of the photoelectric device in this embodiment is that the hole transport layer is replaced by the thin film prepared in thin film embodiment 9, and the electronic functional layer is replaced by the thin film prepared in thin film comparison example 1.

[0150] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this comparative example is that: step S10.3 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film embodiment 9 to form a hole transport layer on the side of the hole injection layer away from the first electrode", and step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film comparative example 1 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer".

[0151] Device Comparison Example 1

[0152] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in device example 1, the difference of the photoelectric device in this comparative example is that the electronic functional layer is replaced by the thin film prepared in thin film comparative example 1.

[0153] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this comparative example is that: step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film comparative example 1 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer."

[0154] Device Comparison Example 2

[0155] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in device example 1, the difference of the photoelectric device in this comparative example is that the electronic functional layer is replaced by the thin film prepared in thin film comparative example 1, and the hole functional layer is replaced by the thin film prepared in thin film comparative example 2.

[0156] Compared with the preparation method of the optoelectronic device in device embodiment 1, the difference of the preparation method of the optoelectronic device in this comparative example is that: step S10.3 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film comparison example 2 to form a hole transport layer on the side of the hole injection layer away from the first electrode", and step S10.5 is replaced by "under a nitrogen environment at normal temperature and pressure, refer to the preparation method of the thin film in thin film comparison example 1 to form an electronic functional layer on the side of the light-emitting layer away from the hole transport layer".

[0157] Experimental Example 1

[0158] The surface morphologies of the films prepared in Film Examples 1 to 9, Film Comparative Example 1 and Film Comparative Example 2 were observed using a scanning electron microscope, wherein: Figure 3 and Figure 4 The surface morphologies of the films prepared in Film Example 1 and Film Comparative Example 1 are shown respectively. It can be seen from the surface morphologies of the films that compared with the films prepared in Film Comparative Example 1 and Film Comparative Example 2, the films prepared in Film Examples 1 to 9 have higher density because the cross-linked gelatin can fill the gaps between adjacent metal oxides, thereby improving the density of the film.

[0159] The surface roughness Ra of the films prepared in Film Examples 1 to 9, Film Comparative Example 1 and Film Comparative Example 2 was measured using an atomic force microscope. The measurement results are shown in Table 1 below:

[0160] Table 1

[0161]

[0162] It can be seen from Table 1 that compared with the films prepared in Film Comparison Example 1 and Film Comparison Example 2, the films prepared in Film Example 1 to Film Example 9 have lower surface roughness. The reason is that cross-linked gelatin is an organic compound with a network structure, which can improve the film-forming quality.

[0163] Experimental Example 2

[0164] The encapsulated optoelectronic devices in device examples 1 to 10, device comparative examples 1 and device comparative example 2 were placed in an environment with a temperature of 25° C. and a relative humidity of 80% for 30 days, and then the electroluminescent morphology and optoelectronic performance of each optoelectronic device were detected. Among them, the electroluminescent morphology of the optoelectronic devices in device examples 1, device example 8 and device comparative example 1 is as follows: Figure 5 shown.

[0165] The photoelectric performance is tested using FPD optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc.) to obtain the parameters of each photoelectric device, such as the start-up voltage, current, brightness, and luminescence spectrum, and then calculate the key parameters such as external quantum efficiency and power efficiency, and use life test equipment to detect the device life of each of the above photoelectric devices. The test environment temperature is 25°C and the relative humidity is 40%.

[0166] The current efficiency detection method includes the following steps: setting the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the optoelectronic device in the range of 0V to 8V. The initial voltage value of the brightness is 3V. The data is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the optoelectronic device under the collection conditions. The current efficiency (CE@1000nit, cd / A) at a brightness of 1000nit is obtained.

[0167] The device life detection method includes the following steps: under the drive of a constant current (2mA), using a life test equipment to perform electroluminescence life analysis on each photoelectric device, recording the time required for each photoelectric device to decay from the maximum brightness to 95% (T95,h), and calculating the time required for the brightness of each photoelectric device to decay from 100% to 95% at a brightness of 1000nit through a decay fitting formula (T95@1000nit,h).

[0168] The performance test structure of each optoelectronic device is shown in Table 2 below:

[0169] Table 2

[0170]

[0171] It can be seen from Table 2 that compared with the optoelectronic device in device comparison example 1, the optoelectronic performance and device life of the optoelectronic devices in device examples 1 to 8 are better. Taking the optoelectronic devices in device example 6 and device comparison example 1 as examples, the CE@1000nit of the optoelectronic device in device example 6 is 1.4 times the CE@1000nit of the optoelectronic device in device comparison example 1, the T95 of the optoelectronic device in device example 6 is 2 times the T95 of the optoelectronic device in device comparison example 1, and the T95@1000nit of the optoelectronic device in device example 6 is 2.6 times the T95@1000nit of the optoelectronic device in device comparison example 1. Compared with the optoelectronic devices in device comparison example 2, the optoelectronic devices in device example 9 and device example 10 have better optoelectronic performance and device life. Taking the optoelectronic devices in device example 9 and device comparison example 2 as examples, the CE@1000nit of the optoelectronic device in device example 9 is 1.3 times the CE@1000nit of the optoelectronic device in device comparison example 2, the T95 of the optoelectronic device in device example 9 is 2.15 times the T95 of the optoelectronic device in device comparison example 2, and the T95@1000nit of the optoelectronic device in device example 9 is 1.6 times the T95@1000nit of the optoelectronic device in device comparison example 2.

[0172] It can be seen from this that at least one functional sublayer (electronic functional layer and / or hole functional layer) in the optoelectronic device is prepared by the thin film preparation method in the embodiment of the present application, which can improve the density of the functional sublayer and reduce the surface roughness of the functional sublayer, so that the functional sublayer has good water resistance, effectively improves the problem of rapid quenching of excitons caused by the invasion of external water molecules into the light-emitting layer, and effectively improves the photoelectric performance, device life and performance stability of the optoelectronic device.

[0173] Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A film, It is characterized in that The material of the film includes metal oxide material and cross-linked gelatin.

2. The film according to claim 2, It is characterized in that The cross-linking degree of the cross-linked gelatin is 60% to 100%; and / or The material of the film consists of a metal oxide material and cross-linked gelatin; and / or The cross-linked gelatin is a substance obtained by treating gelatin with a cross-linking agent, the mass ratio of the gelatin to the metal oxide material is 1:(10-100), and the cross-linking agent is selected from one or more of aldehyde compounds, 1-ethyl-(3-dimethylaminopropyl)carbodiimide, dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-hydroxysuccinimide, Woodward's reagent K and N,N'-carbonyldiimidazole; optionally, the aldehyde compound is selected from one or more of formaldehyde, glutaraldehyde and glyceraldehyde; and / or The metal oxide material is in the form of nanosheets or nanoparticles. When the metal oxide material is in the form of nanoparticles, the average particle size of the metal oxide material is 2nm to 15nm.

3. A method for preparing a thin film, It is characterized in that The steps include: Providing a first dispersion liquid including a metal oxide material and gelatin, mixing the first dispersion liquid and a cross-linking agent to perform a gelatin cross-linking reaction to obtain a mixture; and The mixture is deposited and dried to obtain a thin film.

4. The method for preparing the thin film according to claim 3, It is characterized in that In the first dispersion, the mass ratio of the gelatin to the metal oxide material is 1:(10-100); and / or The step of providing a first dispersion liquid including a metal oxide material and gelatin comprises: providing a second dispersion liquid including the metal oxide material and a gelatin solution, and mixing the second dispersion liquid and the gelatin solution to obtain a first dispersion liquid; and / or The metal element in the metal oxide material is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals; and / or The dispersion medium of the first dispersion liquid is a first solvent, and the first solvent is selected from one or more of water, glycerol, chloroform and ether.

5. The method for preparing the thin film according to claim 4, It is characterized in that The metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide; wherein the non-doped first metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 、NiO、MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, and / or the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 、ZrO 2 、NiO、MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, Ni, Mo, W, V, Cr, Cu and Pt; and / or The metal oxide material is in the form of nanosheets or nanoparticles; when the metal oxide material is in the form of nanoparticles, the average particle size of the metal oxide material is 2nm to 15nm; and / or The dispersion medium of the second dispersion is a second solvent, and the second solvent is selected from one or more of water and aliphatic alcohol compounds having 1 to 10 carbon atoms; and / or The solvent of the gelatin solution is a third solvent, and the third solvent is selected from one or more of water, glycerol, chloroform and ether.

6. A method for preparing a thin film according to any one of claims 3 to 5, It is characterized in that The cross-linking agent is selected from one or more of aldehyde compounds, 1-ethyl-(3-dimethylaminopropyl)carbodiimide, dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-hydroxysuccinimide, Woodward's reagent K and N,N'-carbonyldiimidazole; optionally, the aldehyde compound is selected from one or more of formaldehyde, glutaraldehyde and glyceraldehyde; and / or In the step of mixing the first dispersion and the cross-linking agent to perform a gelatin cross-linking reaction, the mass ratio of the cross-linking agent to the gelatin in the first dispersion is 1:(100-500).

7. The method for preparing the thin film according to claim 6, It is characterized in that The cross-linking reaction is carried out at a temperature of 40°C to 50°C; and / or The cross-linking reaction time is 5 min to 60 min.

8. A photoelectric device, It is characterized in that The optoelectronic device comprises: A first electrode and a second electrode disposed opposite to each other; and A functional layer is disposed between the first electrode and the second electrode; Wherein, the functional layer includes multiple functional sublayers; at least one of the functional sublayers includes a metal oxide material and cross-linked gelatin, and / or at least one of the functional sublayers is prepared using the method for preparing the film as described in any one of claims 3 to 7.

9. The optoelectronic device according to claim 8, It is characterized in that The plurality of functional sublayers include an electronic functional layer; the electronic functional layer includes a metal oxide material and cross-linked gelatin, and / or the electronic functional layer is prepared by the thin film preparation method as claimed in any one of claims 3 to 7; the metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide; the non-doped first metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 and ZrO 2 One or more of the above, and / or the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is selected from ZnO, TiO 2 SnO 2 、BaO、Ta 2 O 3 、Al 2 O 3 and ZrO 2 One or more of the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y and In; optionally, the molar amount of the first doping element accounts for no more than 50% of the total molar amount of the doped second metal oxide.

10. The optoelectronic device according to claim 8, It is characterized in that The plurality of functional sublayers include a hole functional layer; the hole functional layer includes a metal oxide material and cross-linked gelatin, and / or the hole functional layer is prepared by the thin film preparation method as claimed in any one of claims 3 to 7; the metal oxide material is selected from one or more of a non-doped first metal oxide and a doped second metal oxide; the non-doped first metal oxide is selected from NiO, MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, and / or the doped second metal oxide is a main metal oxide doped with the first doping element, and the main metal oxide is selected from NiO, MoO 3 , WO 3 、V 2 O 5 Cr 2 O 3 , CuO and Cu 2 O, the first doping element is selected from one or more of Ni, Mo, W, V, Cr, Cu and Pt; optionally, the molar amount of the first doping element accounts for no more than 50% of the total molar amount of the doped second metal oxide.

11. The optoelectronic device according to claim 8, It is characterized in that The cross-linking degree of the cross-linked gelatin is 60% to 100%; and / or The cross-linked gelatin is a compound obtained by treating gelatin with a cross-linking agent, the mass ratio of the gelatin to the metal oxide material is 1:(10-100), and the cross-linking agent is selected from one or more of aldehyde compounds, 1-ethyl-(3-dimethylaminopropyl)carbodiimide, dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-hydroxysuccinimide, Woodward's reagent K and N,N'-carbonyldiimidazole; optionally, the aldehyde compound is selected from one or more of formaldehyde, glutaraldehyde and glyceraldehyde; and / or The metal oxide material is in the form of nanosheets or nanoparticles. When the metal oxide material is in the form of nanoparticles, the average particle size of the metal oxide material is 2nm to 15nm.

12. The optoelectronic device according to any one of claims 8 to 11, It is characterized in that The plurality of functional sublayers include a light-emitting layer; the material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials. One or more of the following: optical materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots, the core-shell structure quantum dots include one or more shells; the material of the single-component quantum dots, the core-shell structure quantum dots The material of the core of the core-shell quantum dot and the material of the shell of the core-shell quantum dot are independently selected from one or more of Group II-VI compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds and Group I-III-VI compounds; optionally, the Group II-VI compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Z One or more of nSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and / or the III-VI group compound is selected from In 2 S 3 、In 2 Se 3 、InGaS 3 and InGaSe 3 One or more of, and / or the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, One or more of GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and / or the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and / or the I-III-VI group compound is selected from one or more of AgInS, AgInS 2 、CuInS、CuInS 2 、AgGaS 2 、CuGaS 2 、CuGaO 2 ,AgGaO 2 、AgAlO 2 、AgInGaS 2 CuInGaS 2 One or more of; and / or, the inorganic perovskite quantum dot has a general structural formula of AMX 3 , where A is Cs + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX 3 , C is a carboxamidino group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX 3 , B is an organic amine cation; and / or The materials of the first electrode and the second electrode independently include one or more of a metal, a carbon material and a third metal oxide; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the third metal oxide is selected from indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO 2 , ZnO and In 2 O 3 One or more of.

13. An electronic device, It is characterized in that The electronic device comprises the optoelectronic device as claimed in any one of claims 8 to 12.

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