Substrate monitoring method and substrate processing apparatus

Abstract

The present invention relates to a substrate monitoring method and a substrate processing apparatus, and more particularly, to a substrate monitoring method and a substrate processing apparatus, which can detect the degree of deformation of a substrate by measuring the capacitance between an upper electrode inside a cavity and the substrate when various processes for the substrate are performed, and to a substrate processing apparatus. The plate processing apparatus includes: a chamber providing a processing space for a substrate; an upper electrode disposed at an upper portion inside the cavity; a substrate support unit that supports the substrate inside the cavity; a lower showerhead disposed on the inner side of the substrate support part and supplying a process gas or plasma toward the lower surface of the substrate; and a sensing unit that senses the degree of deformation of the substrate by measuring capacitance between the upper electrode and the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate monitoring method and a substrate processing device, and more particularly to a substrate monitoring method and a substrate processing device that can measure the capacitance between an upper electrode inside a chamber and a substrate and sense the degree of warpage of the substrate when performing various processes on the substrate. Background Art

[0002] Typically, a substrate processing device performs various processes on a substrate inside a chamber, such as evaporation, etching, cleaning, and the like.

[0003] Such a chamber adjusts the process environment according to temperature and pressure conditions, and it is not easy to monitor the conditions inside the chamber in the prior art. For example, it is not easy to determine whether bowing, warpage or bending occurs on the substrate when the substrate is being processed.

[0004] In particular, a substrate processing apparatus has been recently developed that vapor-deposit a thin film of a predetermined thickness on the bottom surface of a substrate. When such a substrate processing apparatus vapor-deposit a thin film on the bottom surface of a substrate, it is not easy to determine whether the substrate is deformed or not.

[0005] Some devices according to the prior art disclose a technique for measuring the flatness of a substrate by measuring the current and voltage of a pair of electrodes disposed inside a cavity and measuring the impedance. However, in such devices according to the prior art, since the voltage and current are directly measured to calculate the impedance, it is difficult to correctly determine the deformation degree of the substrate based on the changes in the voltage and current. Summary of the invention

[0006] In order to solve the above problems, the present invention aims to provide a substrate monitoring method and a substrate processing device which can measure the capacitance between the upper electrode and the substrate in the equipment for evaporating a thin film under the substrate and sense the degree of deformation of the substrate.

[0007] In addition, an object of the present invention is to provide a substrate monitoring method and a substrate processing apparatus that can measure the capacitance between a pair of electrodes in a chamber and improve the measurement accuracy.

[0008] As described above, the object of the present invention can be achieved by a substrate processing device, which is characterized by comprising: a cavity, providing a processing space for a substrate; an upper electrode, arranged at the upper part of the cavity; a substrate support part, supporting the substrate inside the cavity; a lower nozzle, arranged at the inner side of the substrate support part and providing process gas or plasma toward the bottom of the substrate; and a sensing part, measuring the capacitance (capacitance) between the upper electrode and the substrate to sense the degree of deformation (warpage) of the substrate.

[0009] Here, the upper electrode may be composed of a plurality of divided electrodes, and the sensor unit may measure capacitance between the plurality of divided electrodes and the substrate.

[0010] On the other hand, when the measured change in capacitance is greater than the difference between an initial measurement value and a predetermined critical value, the process performed by the substrate processing apparatus is terminated or notified by an alarm.

[0011] Furthermore, when the measured change in capacitance is greater than a difference between an initial measurement value and a predetermined critical value, the degree of deformation of the substrate may be displayed on a display unit.

[0012] Alternatively, the area in which the capacitance is measured by the sensing unit may be adjusted by adjusting the number and arrangement of the plurality of segmented electrodes.

[0013] Furthermore, the sensing portion may be composed of a plurality of sensing portions, and the deformation degrees of the substrate in each region may be compared by comparing the capacitance values ​​measured in the respective sensing portions.

[0014] On the other hand, the purpose of the present invention as described above can be achieved by a substrate monitoring method for a substrate processing device, characterized in that the substrate processing device comprises an upper electrode arranged inside a chamber, a lower nozzle for providing process gas or plasma toward the bottom of the substrate, and a sensing unit for measuring the capacitance between the upper electrode and the substrate. The substrate monitoring method comprises: a step of measuring the capacitance between the upper electrode and the substrate by means of the sensing unit; and a step of judging the degree of deformation (warpage) of the substrate based on the capacitance measurement value measured in the sensing unit.

[0015] Here, when the upper electrode is composed of a plurality of divided electrodes, the sensing unit may measure the capacitance between the plurality of divided electrodes and the substrate.

[0016] On the other hand, when the sensing portion is composed of a plurality of sensing portions, the substrate monitoring method may further include a step of comparing the deformation degrees of the substrate according to the regions by comparing the measured values ​​of the capacitance measured in each of the sensing portions.

[0017] In addition, the substrate monitoring method may further include: when the measured change in the capacitance is greater than the difference between an initial measurement value and a predetermined critical value, the process performed by the substrate processing apparatus is terminated or an alarm is issued to notify.

[0018] Furthermore, the substrate monitoring method may further include: a step of displaying the deformation degree of the substrate through a display unit when the measured change in the capacitance is greater than the difference between an initial measurement value and a predetermined critical value.

[0019] According to the present invention having the above-mentioned structure, the capacitance inside the cavity, for example, the capacitance between the upper electrode inside the cavity and the substrate, can be measured to accurately sense the degree of warpage of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a side cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention,

[0021] Figure 2 as well as Figure 3 is a plan view showing the structure of an upper electrode according to various embodiments,

[0022] Figure 4 as well as Figure 5 It is a graph showing the change in capacitance and a graph showing the deformation of the substrate during the process of the substrate.

[0023] (Explanation of Reference Numerals)

[0024] S: Substrate

[0025] 100: Cavity

[0026] 110: Processing Space

[0027] 200: Upper heater

[0028] 400: substrate support

[0029] 410: Substrate holder

[0030] 420: Fixed part

[0031] 422: Exhaust flow path

[0032] 430: Lower nozzle

[0033] 450: Down the board

[0034] 470: Drive rod

[0035] 490: Exhaust

[0036] 500: Sensor

[0037] 600, 700, 800, 900: Upper electrode

[0038] 1000: Substrate processing equipment DETAILED DESCRIPTION

[0039] Hereinafter, with reference to the accompanying drawings, the structure of the substrate processing apparatus 1000 according to the embodiment of the present invention will be described in detail.

[0040] Figure 1 is a side cross-sectional view of a substrate processing apparatus 1000 according to an embodiment of the present invention.

[0041] Reference Figure 1 The substrate processing apparatus 1000 may include a cavity 100 for providing a processing space 110 for a substrate S, an upper electrode 600 disposed at an upper portion of the cavity 100, a substrate support portion 400 for supporting the substrate S in the cavity 100, a lower nozzle 430 disposed at an inner side of the substrate support portion 400 and providing a process gas toward a bottom of the substrate S, and a sensing portion 500 for measuring a capacitance between the upper electrode 600 and the substrate S and sensing a degree of warpage of the substrate.

[0042] Specifically, the chamber 100 may provide a processing space 110 inside which accommodates various components required for the evaporation process on the substrate S.

[0043] An opening (not shown) for loading or unloading a substrate into or from the processing space 110 may be provided at one side of the chamber 100 , and a door (not shown) may be provided at the opening.

[0044] An upper heater 200 for supplying a purge gas such as an inert gas toward the upper surface of the substrate S may be provided at the upper portion of the chamber 100 .

[0045] An upper supply flow path 220 for supplying a purge gas may be connected to the upper portion of the chamber 100. The purge gas supplied along the upper supply flow path 220 is supplied downward through the upper heater 200.

[0046] The purge gas supplied from the upper heater 200 is supplied toward the processing space 110 below to prevent the process gas supplied from the lower shower head 430 from flowing into the upper heater 200 .

[0047] Specifically, the upper heater 200 may include a heater plate 230 and a showerhead plate 210 provided below the heater plate 230. A first buffer space 214 is provided between the heater plate 230 and the showerhead plate 210.

[0048] The heater plate 230 may include a heater (not shown) inside thereof to heat the substrate S and the processing space 110 to a predetermined process temperature.

[0049] On the other hand, a plurality of first supply holes 212 may be formed in the showerhead plate 210 .

[0050] Therefore, the purge gas supplied through the upper supply flow path 220 is diffused in the first buffer space 214 and supplied downward through the first supply hole 212 of the showerhead plate 210. Figure 1 In the figure, for the convenience of illustration, it is shown that the first supply hole 212 is formed in only a part of the showerhead plate 210 , but the first supply hole 212 may be formed across the entire area of ​​the showerhead plate 210 .

[0051] On the other hand, at least one of the upper heater 200 and the lower shower head 430 may further include an RF power supply unit (not shown) for applying RF power.

[0052] For example, the upper heater 200 may be connected to an RF power supply unit (not shown) to supply RF power. In this case, the lower showerhead 430 may be grounded to function as a lower electrode.

[0053] During the process of the substrate S, when RF power is applied to the upper heater 200, the upper heater 200 can be capacitively coupled with the lower showerhead 430, plasma P is generated between the substrate S and the lower showerhead 430, and a thin film is easily evaporated under the substrate S.

[0054] On the other hand, the substrate support part 400 may be movable upward and downward below the processing space 110 to support the lower edge of the substrate S. The substrate support part 400 may include the aforementioned lower shower head 430 at the inner side thereof so that the process gas is supplied through the lower shower head 430 .

[0055] The substrate support part 400 may be connected to a driving rod 470 extending downward, and the driving rod 470 is connected to a driving part (not shown) such as a motor, and the driving rod 470, the substrate support part 400 and the lower nozzle 430 are driven by the driving part to move up and down.

[0056] On the other hand, the substrate support part 400 may include a substrate holder 410 for supporting the lower edge of the substrate S, and the lower showerhead 430 may be provided inside the substrate holder 410. In addition, the substrate support part 400 may further include a lower plate 450 formed with a heat exchange flow path (not shown).

[0057] In this case, the substrate holder 410 may be supported at its lower end by the fixing portion 420 connected to the lower plate 450 .

[0058] The substrate holder 410 may extend upward from the fixing portion 420 , and an upper end of the substrate holder 410 may have an inwardly bent shape.

[0059] In this case, a recess 416 may be formed at the upper end of the substrate holder 410. Therefore, when the substrate S is placed on the substrate holder 410, the substrate S is inserted into the recess 416 so that the lower edge of the substrate S is supported.

[0060] On the other hand, the process gas may be supplied to the lower shower head 430 through the lower supply path 474 penetrating the driving rod 470 .

[0061] The lower shower head 430 may be provided with a second buffer space 432, and the second buffer space 432 may be provided between the lower shower head 430 and the lower plate 450. In addition, although not shown in the drawings, the second buffer space 432 may also be prepared inside the lower shower head 430. Although not shown in the drawings, a baffle or a blocking plate for gas dispersion may also be inserted between the lower shower head 430 and the lower plate 450 or in the second buffer space 432.

[0062] On the other hand, a heat exchange flow path (not shown) may be formed on the lower plate 450 , and a heat exchange fluid or the like flows along the heat exchange flow path to adjust the temperature of the process gas or the inside of the chamber 100 through heat exchange.

[0063] In addition, the lower plate 450 may play a role of supporting the lower shower head 430 and the substrate holder 410. In this case, the lower shower head 430 may be connected to the upper surface of the lower plate 450. In addition, the fixing part 420 supporting the lower end of the substrate holder 410 may be connected to the lower plate 450.

[0064] At this time, the fixing part 420 may be provided in plurality and spaced at predetermined intervals along the outer circumference of the lower plate 450. That is, when a plurality of the fixing parts 420 are provided, the adjacent fixing parts 420 may be opened downward and communicated with the interior of the chamber 100. Therefore, the side surface of the lower showerhead 430 and the space between the side surface of the lower plate 450 and the inner surface of the substrate holder 410 may form an exhaust flow path 422.

[0065] In this case, a portion of the process gas supplied from the lower showerhead 430 is exhausted downward inside the chamber 100 through the exhaust passage 422 , and is exhausted to the outside of the chamber 100 through the exhaust unit 490 provided below the chamber 100 .

[0066] On the other hand, the purge gas supplied downward from the upper heater 200 may flow downward of the chamber 100 and be exhausted to the outside of the chamber 100 through the exhaust portion 490 .

[0067] On the other hand, an upper electrode 600 capable of measuring capacitance may be disposed on the upper heater 200 .

[0068] Figure 2 as well as Figure 3 2 is a plan view showing the configuration of the upper electrodes 600 , 700 , 800 , 900 according to various embodiments.

[0069] Reference Figure 1 as well as Figure 2 (A), the upper electrode 600 can be composed of a plurality of segmented electrodes 610 and 630.

[0070] For example, the first split electrode 610 and the second split electrode 630 may be arranged in the circumferential direction around the center of the upper heater 200. In this embodiment, two split electrodes are shown, but the present invention is not limited thereto and three or more split electrodes are also possible.

[0071] The first split electrode 610 may be disposed at a central portion of the upper heater 200 , and the second split electrode 630 may be disposed in a circumferential direction at a predetermined interval from the first split electrode 610 .

[0072] On the other hand, the sensing unit 500 for sensing capacitance may be connected to the first split electrode 610 and the second split electrode 630 .

[0073] Therefore, when the capacitance between the first split electrode 610 and the second split electrode 630 is measured by the sensing unit 500, as shown in FIG. Figure 1As shown, the capacitance between the first split electrode 610 and the substrate S and between the substrate S and the second split electrode 630 can be measured. That is, the capacitance between the upper electrode 600 and the substrate S can be measured by the sensing unit 500 .

[0074] In such Figure 2 The configuration (A) is helpful for sensing the deformation degree of the substrate S as a whole, and in particular, is helpful for sensing the deformation degree of the substrate S in the radial direction.

[0075] On the other hand, the capacitance measured in the sensing unit 500 may vary according to the process performed on the substrate S.

[0076] Figure 4 as well as Figure 5 1 is a graph showing a change in capacitance during a process on the substrate S and a graph showing deformation of the substrate S. Figure 4 (A) and Figure 5 In (A), the horizontal axis shows the time (Time) according to the process, and the vertical axis shows the capacitance (Capacitance) measured in the sensing unit 500. In addition, Figure 4 (B) and Figure 5 (B) shows the states of compressive stress and tensile stress acting on the substrate S. Figure 4 (B) and Figure 5 In (B), the substrate S in a non-deformed state is indicated by a dotted line, and the substrate S after deformation is indicated by a solid line.

[0077] Reference Figure 4 (A) may be that the process of the substrate S starts (T1) and plasma is provided while supplying process gas through the lower shower head 430, so that a thin film is evaporated under the substrate S.

[0078] In this case, if deformation occurs at the substrate S according to the kind of stress acting on the substrate S through the thin film, the distance between the substrate S and the upper electrode 600 may be reduced or further increased.

[0079] exist Figure 4 In the case of (B), a compressive stress is applied to the substrate S by the thin film vapor-deposited under the substrate S, and the distance between the substrate S and the upper electrode 600 is reduced from the first distance D1 to the second distance D2. If the interval between the upper electrode 600 and the substrate S is reduced, the measured value of the capacitance measured by the sensing unit 500 increases.

[0080] That is, Figure 4 As shown in (A), the capacitance value measured by the sensing unit 500 increases approximately in proportion to the degree of deformation of the substrate S.

[0081] Therefore, when the change △C1 of the measured value of the capacitance sensed by the sensing unit 500 corresponds to a difference greater than the initial measured value C0 and a predetermined first critical value C1, the process (T2) performed by the substrate processing device 1000 can be terminated, or notified by an alarm, etc., or the degree of deformation of the substrate S can be displayed by a display unit (not shown).

[0082] On the other hand, Figure 5 In the case of (B), a tensile stress is applied to the substrate S by the thin film vapor-deposited under the substrate S, and the distance between the substrate S and the upper electrode 600 increases from the first distance D1 to the second distance D2. If the distance between the upper electrode 600 and the substrate S is increased, the capacitance measured by the sensing unit 500 is reduced.

[0083] That is, Figure 5 As shown in (A), the capacitance value measured by the sensing unit 500 decreases approximately in proportion to the degree of deformation of the substrate S.

[0084] Therefore, when the change △C2 of the measured value of the capacitance sensed by the sensing unit 500 corresponds to a difference greater than the initial measured value C0 and a predetermined second critical value C2, the process (T2) performed by the substrate processing device 1000 can be terminated, or notified by an alarm, etc., or the degree of deformation of the substrate S can be displayed by a display unit (not shown).

[0085] On the other hand, refer to Figure 2 (B), the split electrodes 710 and 730 may also be configured in a semicircular shape.

[0086] like Figure 2 As shown in (B), the upper electrode 700 may be composed of a first split electrode 710 and a second split electrode 730 in a semicircular form. Figure 2 In (B), the first split electrode 710 and the second split electrode 730 have the same area, but are not limited thereto and may be configured to have different areas from each other.

[0087] In this case, the sensing unit 500 may be connected to the first split electrode 710 and the second split electrode 730 .

[0088] In such Figure 2In the configuration (B), it is helpful to sense the deformation degree of the entire substrate S, especially to sense the deformation degree of the left side and the right side of the substrate S.

[0089] On the other hand, refer to Figure 3 (A), the upper electrode 800 can be composed of, for example, a plurality of segmented electrodes 810, 830, 850, and 870.

[0090] The first split electrode 810, the second split electrode 830, the third split electrode 850, and the fourth split electrode 870 may be disposed along the upper heater 200. Figure 3 In (A), the split electrodes 810 , 830 , 850 , and 870 are shown to be arranged along the edge of the upper heater 200 , but the present invention is not limited thereto and the split electrodes 810 , 830 , 850 , and 870 may also be arranged along the center of the upper heater 200 .

[0091] When the number of the split electrodes 810 , 830 , 850 , and 870 increases, the sensing unit 500 may also be composed of a plurality of components. For example, the first sensing unit 500A may be connected to the first split electrode 810 and the second split electrode 830 , and the second sensing unit 500B may be connected to the third split electrode 850 and the fourth split electrode 870 .

[0092] Therefore, based on the above Figure 2 In the case of the embodiment of the present invention, it is not possible to determine the region where the capacitance between the upper electrodes 600, 700 and the substrate S is measured, but according to Figure 3 In the embodiment (A), the number and arrangement of the plurality of segmented electrodes 810 , 830 , 850 , and 870 can be adjusted to appropriately adjust the capacitance measurement area.

[0093] On the other hand, if multiple stresses act on the substrate S, the substrate S may deform in a so-called "saddle type" in which it deforms in multiple directions instead of in one direction. Figure 3 The configuration of (A) can more effectively sense the deformed substrate S according to the aforementioned saddle form.

[0094] In the case of this embodiment, the capacitance values ​​measured by the first sensing unit 500A and the second sensing unit 500B can be compared with each other to compare the deformation degrees of the substrate S according to the regions. Further, when the change amount ΔC of the capacitance values ​​measured by the first sensing unit 500A and the second sensing unit 500B corresponds to the difference between the initial measurement value and a predetermined critical value or more, the process (T2) performed by the substrate processing apparatus 1000 can be ended, or an alarm or the like can be notified, or the deformation degree of the substrate S can be displayed on a display unit (not shown).

[0095] In addition, refer to Figure 3 (B), the upper electrode 900 may be composed of, for example, a plurality of segmented electrodes 910 , 930 , 950 , and 970 .

[0096] The first split electrode 910, the second split electrode 930, the third split electrode 950, and the fourth split electrode 970 may be arranged along a virtual axis passing through the center of the upper heater 200. Figure 3 In (B), the split electrodes 910, 930, 950, 970 are arranged along the horizontal axis passing through the center of the upper heater 200, but are not limited thereto and may be arranged along the vertical axis or the inclined axis. Alternatively, it is also possible to arrange along a virtual line that does not pass through the center of the upper heater 200.

[0097] When the number of the split electrodes 910 , 930 , 950 , and 970 increases, the sensing unit 500 may also be composed of a plurality of components. For example, the third sensing unit 500C may be connected to the first split electrode 910 and the second split electrode 930 , and the fourth sensing unit 500D may be connected to the third split electrode 950 and the fourth split electrode 970 .

[0098] In such Figure 3 In the configuration of (B), it is beneficial to sense the degree of deformation occurring along any axis of the substrate S.

[0099] In this embodiment, the capacitance values ​​measured by the third sensor 500C and the fourth sensor 500D can be compared with each other to compare the deformation degrees of the substrate S according to the regions. Further, when the change amount ΔC of the capacitance values ​​measured by the third sensor 500C and the fourth sensor 500D corresponds to the difference between the initial measurement value and the predetermined critical value or more, the process (T2) performed by the substrate processing apparatus 1000 can be terminated, or an alarm or the like can be notified, or the deformation degree of the substrate S can be displayed on a display unit (not shown).

[0100] The above description is made with reference to the preferred embodiments of the present invention, but those skilled in the relevant technical field will be able to implement various modifications and changes to the present invention without departing from the concept and scope of the present invention as recorded in the attached patent claims. Therefore, if the implementation of the variation basically includes the constituent elements of the patent claims of the present invention, it should be deemed to be fully included in the technical scope of the present invention.

Claims

1. A substrate processing device, characterized in that: have: The chamber provides a processing space for the substrate; An upper electrode, disposed at an upper portion of the cavity; A substrate supporting portion, supporting the substrate inside the cavity; A lower showerhead is disposed inside the substrate support portion and provides process gas or plasma toward the bottom of the substrate; as well as The sensing unit measures the capacitance between the upper electrode and the substrate to sense the deformation degree of the substrate.

2. The substrate processing device according to claim 1, characterized in that: The upper electrode is composed of a plurality of segmented electrodes. The sensing unit measures capacitance between the plurality of divided electrodes and the substrate.

3. The substrate processing device according to claim 2, characterized in that: When the measured change in capacitance is greater than the difference between the initial measurement value and a predetermined critical value, the process performed by the substrate processing apparatus is terminated or notified by an alarm.

4. The substrate processing device according to claim 2, characterized in that: When the measured change in capacitance is greater than or equal to the difference between an initial measurement value and a predetermined critical value, the degree of deformation of the substrate is displayed on a display unit.

5. The substrate processing device according to claim 2, characterized in that: The area in which the capacitance is measured by the sensing unit can be adjusted by adjusting the number and arrangement of the plurality of segmented electrodes.

6. The substrate processing device according to claim 2, characterized in that: The sensing part is composed of a plurality of sensing parts. The measured values ​​of the capacitance measured in the respective sensing portions are compared to compare the deformation degrees of the substrate in each region.

7. A substrate monitoring method for a substrate processing device, characterized in that: The substrate processing device comprises an upper electrode disposed inside a chamber, a lower showerhead for providing a process gas or plasma toward a lower surface of the substrate, and a sensing unit for measuring a capacitance between the upper electrode and the substrate. The substrate monitoring method comprises: A step of measuring the capacitance between the upper electrode and the substrate by the sensing unit; and The step of determining the degree of deformation of the substrate based on the capacitance measurement value measured in the sensing unit.

8. The substrate monitoring method according to claim 7, characterized in that: When the upper electrode is composed of a plurality of segmented electrodes, The sensing unit measures capacitance between the plurality of divided electrodes and the substrate.

9. The substrate monitoring method according to claim 8, characterized in that: When the sensing part is composed of a plurality of sensing parts, the substrate monitoring method further includes: A step of comparing the measured values ​​of the capacitance measured in each of the sensing portions to compare the degree of deformation of each region of the substrate.

10. The substrate monitoring method according to claim 7, characterized in that: The substrate monitoring method further comprises: When the measured change in the capacitance is greater than or equal to the difference between the initial measurement value and a predetermined critical value, the process performed by the substrate processing apparatus is terminated or an alarm is issued.

11. The substrate monitoring method according to claim 7, characterized in that: The substrate monitoring method further comprises: The step of displaying the deformation degree of the substrate on a display unit when the measured change amount of the capacitance is greater than the difference between an initial measurement value and a predetermined critical value.

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