IGBT breakdown rapid detection method and system based on DSP control algorithm

Abstract

The invention relates to the technical field of power system control, in particular to an IGBT breakdown rapid detection method and system based on a DSP control algorithm, and the method comprises the steps: obtaining the parameter data of a gate pole of an IGBT according to a preset time sequence period, and judging whether an IGBT circuit breaks down or not based on the parameter data; when the IGBT circuit breaks down, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are obtained in real time; the internal temperature data is compared with a preset temperature safety threshold value, and if the internal temperature data is larger than the temperature safety threshold value, an adjustment coefficient is generated; and inputting the adjustment coefficient to first voltage data to obtain second voltage data, and adjusting the voltage input to the IGBT circuit according to the second voltage data. The IGBT circuit has the advantages that the safety of the IGBT circuit is improved, and the protection performance of the IGBT circuit is improved.

Description

Technical Field

[0001] The invention relates to the technical field of power system control, and in particular to an IGBT breakdown fast detection method and system based on a DSP control algorithm. Background Art

[0002] At present, insulated gate bipolar transistors (IGBTs) are widely used in power systems as core components for high-power control due to their high-speed switching, ultra-large voltage tolerance and high-power tolerance. The application of IGBTs in power systems not only improves the efficiency and stability of the system, but also plays a key role in a variety of industrial and civil equipment. For example, in the fields of uninterruptible power supplies (UPS), electric vehicle drive systems, renewable energy conversion systems, etc., the application of IGBTs has greatly improved the reliability and performance of the system.

[0003] In order to ensure the stable operation of the power system, the existing technical solutions mainly rely on the rapid response of IGBT to the pulse width modulation (PWM) waveform to achieve precise control of the weak current system over the strong current system. In addition, in order to prevent the accidental breakdown of IGBT under high-voltage working environment, the existing technology adopts a variety of protection measures. Common protection measures include overcurrent protection, overtemperature protection, short-circuit protection, etc. These protection measures usually monitor the working state parameters of IGBT (such as current, temperature, voltage, etc.) and take corresponding protection actions when abnormal conditions are detected, such as shutting down the IGBT or reducing its working power.

[0004] However, existing protection measures have certain limitations, especially in the case of IGBT breakdown. Once the IGBT breaks down, it cannot be shut down normally, which will cause the power system to fail to control the power. Especially in inverter applications, the breakdown of the IGBT will cause a loop to form between the anode and the cathode, generating a huge current, which will cause the IGBT pins to burn out and even cause an explosion. In this case, not only will it cause serious physical damage to the equipment, but it will also bring a series of safety hazards, such as high temperature causing fire, explosion fragments injuring people, and huge noise destroying the user experience. Therefore, there is room for improvement. Summary of the invention In order to improve the safety of IGBT circuits and enhance the protection performance of IGBT circuits, the present application provides a method, system, device and medium for rapid detection of IGBT breakdown based on a DSP control algorithm.

[0005] The above-mentioned invention objective of the present application is achieved through the following technical solutions: A method for quickly detecting IGBT breakdown based on a DSP control algorithm, the method comprising the steps of: Acquire parameter data of the gate of the IGBT according to a preset timing cycle, and determine whether the IGBT circuit is faulty based on the parameter data; When the IGBT circuit fails, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are acquired in real time; Comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment coefficient is input into the first voltage data to obtain the second voltage data, and the voltage input into the IGBT circuit is adjusted according to the second voltage data.

[0006] By adopting the above technical solution, during the normal operation of the IGBT circuit, the parameter data of the gate of the IGBT is collected in real time, and the parameter data is used to determine in real time whether the IGBT circuit fails. When the IGBT circuit fails, the IGBT circuit maintains the first voltage data input, and the internal temperature data of the IGBT circuit during the shutdown process using the first voltage data input is obtained in real time, and the temperature data in the IGBT circuit is compared with the preset temperature safety threshold value for judgment. When the temperature inside the IGBT circuit rises and exceeds the temperature safety threshold value, an adjustment coefficient is generated, and based on the adjustment coefficient, the first voltage data input to the IGBT circuit is adjusted to obtain the second voltage data, so that the IGBT circuit selects the second voltage data input for shutdown, so that when the IGBT circuit fails, the first voltage data is used in time to shut down the IGBT circuit, which can improve the protection performance of the IGBT circuit. During the shutdown process of the IGBT, the temperature change in the IGBT circuit is recorded in real time. When the temperature in the IGBT circuit is higher than the temperature safety threshold value, the voltage input to the IGBT circuit during the shutdown process is adjusted, and the IGBT circuit is shut down using the second voltage data input, which effectively improves the safety performance of the IGBT circuit.

[0007] In a preferred example, the present application can be further configured as follows: acquiring the parameter data of the gate of the IGBT according to a preset timing cycle, and judging whether the IGBT circuit is faulty based on the parameter data, specifically includes: Acquire current data of the IGBT gate in real time, and construct an IGBT state model based on the current data; The IGBT state model is analyzed to obtain state parameters of the IGBT circuit, and the health status of the IGBT circuit is determined based on the state parameters.

[0008] By adopting the above technical solution, the current data on the gate of the IGBT circuit is collected in real time, and the current data on the IGBT gate is used to construct a state model of the current IGBT circuit. By analyzing the IGBT state model, the current health status of the IGBT circuit is obtained, and then it can be determined whether the IGBT circuit has a fault, and whether the IGBT circuit has a fault function can be monitored in real time.

[0009] In a preferred example, the present application may be further configured as follows: after acquiring the current data of the IGBT gate in real time and building the IGBT state model based on the current data, the IGBT breakdown rapid detection method based on the DSP control algorithm further includes: Acquire the current working environment temperature data of the IGBT circuit in real time, and construct a temperature simulation coefficient based on the working environment temperature data; The temperature simulation coefficient is input into the IGBT state model to obtain a temperature-IGBT state simulation model.

[0010] By adopting the above technical scheme, by obtaining the temperature data of the IGBT circuit in the current working environment, converting the working environment temperature data into a temperature simulation coefficient, and inputting the temperature simulation coefficient into the constructed IGBT state model, a temperature-IGBR state simulation model of the IGBT circuit is obtained. In the process of monitoring the working state of the IGBT circuit, the working environment temperature of the IGBT circuit is used as an influencing factor, thereby improving the accuracy of the state monitoring of the IGBT circuit, and being able to more accurately monitor whether the IGBT circuit is faulty.

[0011] In a preferred example, the present application may be further configured as follows: analyzing the IGBT state model to obtain the state parameters of the IGBT circuit, and determining the health status of the IGBT circuit based on the state parameters, specifically including: Acquire a working simulation charge value of the IGBT circuit based on the IGBT state model, and use the working simulation charge value as a state parameter; The working simulated charge value is compared with a preset normal charge value, and the fault type is determined according to the comparison result.

[0012] By adopting the above technical solution, through analyzing the IGBT state model, a working simulation curve diagram of the IGBT circuit is obtained, and the working simulation charge value is obtained by integrating the working simulation curve diagram of the IGBT circuit. The working simulation charge value is the state parameter of the IGBT circuit. By comparing the obtained working simulation charge value with the preset normal charge value and analyzing different comparison results, it is possible to further determine whether the IGBT circuit has a fault and the type of fault that has occurred.

[0013] In a preferred example, the present application may be further configured as follows: inputting the adjustment coefficient into the first voltage data to obtain the second voltage data, and adjusting the voltage input to the IGBT circuit according to the second voltage data, specifically including: generating a corresponding adjustment control signal according to the adjustment coefficient, and adjusting the first voltage data to second voltage data based on the adjustment control signal; A voltage input to the IGBT circuit is acquired based on the second voltage data.

[0014] By adopting the above technical solution, when the temperature inside the IGBT circuit is too high, a corresponding adjustment control signal is generated according to the adjustment coefficient, and the adjustment control signal is input to the power supply that generates the first voltage data, and the first voltage data is adjusted to the second voltage data output, so that the IGBT circuit is shut down using the second voltage data input, which can effectively prevent the IGBT circuit from burning due to excessive temperature during the shutdown process.

[0015] The second object of the invention is achieved by the following technical solutions: A fast IGBT breakdown detection device based on a DSP control algorithm, the fast IGBT breakdown detection device based on a DSP control algorithm comprising: A fault judgment module is used to obtain parameter data of the gate of the IGBT according to a preset timing cycle, and judge whether the IGBT circuit is faulty based on the parameter data; An internal temperature monitoring module, used for acquiring internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit in real time when a fault occurs in the IGBT circuit; A protection module, used for comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment module is used to input the adjustment coefficient into the first voltage data to obtain the second voltage data, and adjust the voltage input to the IGBT circuit according to the second voltage data.

[0016] By adopting the above technical solution, during the normal operation of the IGBT circuit, the parameter data of the gate of the IGBT is collected in real time, and the parameter data is used to determine in real time whether the IGBT circuit fails. When the IGBT circuit fails, the IGBT circuit maintains the first voltage data input, and the internal temperature data of the IGBT circuit during the shutdown process using the first voltage data input is obtained in real time, and the temperature data in the IGBT circuit is compared with the preset temperature safety threshold value for judgment. When the temperature inside the IGBT circuit rises and exceeds the temperature safety threshold value, an adjustment coefficient is generated, and based on the adjustment coefficient, the first voltage data input to the IGBT circuit is adjusted to obtain the second voltage data, so that the IGBT circuit selects the second voltage data input for shutdown, so that when the IGBT circuit fails, the first voltage data is used in time to shut down the IGBT circuit, which can improve the protection performance of the IGBT circuit. During the shutdown process of the IGBT, the temperature change in the IGBT circuit is recorded in real time. When the temperature in the IGBT circuit is higher than the temperature safety threshold value, the voltage input to the IGBT circuit during the shutdown process is adjusted, and the IGBT circuit is shut down using the second voltage data input, which effectively improves the safety performance of the IGBT circuit.

[0017] The third objective of the present application is achieved through the following technical solutions: A computer device comprises a memory, a processor and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the steps of the IGBT breakdown rapid detection method based on a DSP control algorithm are implemented.

[0018] The fourth objective of the present application is achieved through the following technical solutions: A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the IGBT breakdown rapid detection method based on a DSP control algorithm.

[0019] In summary, the present application includes at least one of the following beneficial technical effects: 1. During the normal operation of the IGBT circuit, the parameter data of the gate of the IGBT is collected in real time, and the parameter data is used to determine in real time whether the IGBT circuit is faulty. When the IGBT circuit fails, the IGBT circuit is shut down by maintaining the first voltage data input. During the IGBT shutdown process, the temperature change in the IGBT circuit is recorded in real time. When the temperature in the IGBT circuit is higher than the temperature safety threshold, the voltage input for the IGBT circuit shutdown process is adjusted, and the IGBT circuit is shut down using the second voltage data input, which effectively improves the safety performance of the IGBT circuit. 2. By collecting the current data on the gate of the IGBT circuit in real time, the current state model of the IGBT circuit is constructed using the current data on the gate of the IGBT. By analyzing the IGBT state model, the current health status of the IGBT circuit is obtained, and then it can be determined whether the IGBT circuit is faulty, and whether the IGBT circuit is faulty can be monitored in real time; 3. By obtaining the temperature data of the IGBT circuit in the current working environment, converting the working environment temperature data into a temperature simulation coefficient, and inputting the temperature simulation coefficient into the constructed IGBT state model, the temperature-IGBR state simulation model of the IGBT circuit is obtained. In the process of monitoring the working state of the IGBT circuit, the working environment temperature of the IGBT circuit is used as an influencing factor, thereby improving the accuracy of the state monitoring of the IGBT circuit, and being able to more accurately monitor whether the IGBT circuit is faulty; 4. By analyzing the IGBT state model, the working simulation curve diagram of the IGBT circuit is obtained. The working simulation charge value is obtained by integrating the working simulation curve diagram of the IGBT circuit. The working simulation charge value is the state parameter of the IGBT circuit. The obtained working simulation charge value is compared with the preset normal charge value, and different comparison results are analyzed to further determine whether the IGBT circuit has a fault and the type of fault that has occurred. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a flow chart of a method for rapid IGBT breakdown detection based on a DSP control algorithm in one embodiment of the present application; Figure 2 It is a flowchart for implementing step S10 in the IGBT breakdown rapid detection method based on the DSP control algorithm in one embodiment of the present application; Figure 3 It is another implementation flow chart of the IGBT breakdown rapid detection method based on the DSP control algorithm in one embodiment of the present application; Figure 4 It is a flowchart for implementing step S12 in the IGBT breakdown rapid detection method based on the DSP control algorithm in one embodiment of the present application; Figure 5 It is a flowchart for implementing step S40 in the IGBT breakdown rapid detection method based on the DSP control algorithm in one embodiment of the present application; Figure 6 It is a principle block diagram of an IGBT breakdown fast detection device based on a DSP control algorithm in one embodiment of the present application; Figure 7 It is a schematic diagram of a device in an embodiment of the present application. DETAILED DESCRIPTION

[0021] The present application is further described in detail below in conjunction with the accompanying drawings.

[0022] In one embodiment, if Figure 1 As shown, the present application discloses a method for rapid detection of IGBT breakdown based on a DSP control algorithm, which specifically includes the following steps: S10: Acquire parameter data of the gate of the IGBT according to a preset timing cycle, and determine whether the IGBT circuit is faulty based on the parameter data.

[0023] In this embodiment, the parameter data refers to electrical parameters such as gate voltage, current, and power of the IGBT of the IGBT circuit.

[0024] Specifically, during the normal operation of the IGBT circuit,

[0025] S20: When the IGBT circuit fails, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are acquired in real time.

[0026] In this embodiment, the internal temperature data refers to the circuit temperature value of the internal circuit of the IGBT circuit, and the first voltage data refers to the first voltage value input to the IGBT driving power supply for soft shutdown.

[0027] Specifically, when a fault occurs in the IGBT circuit, the IGBT circuit is soft-shutdowned by maintaining the first voltage value input, and further, the circuit temperature value of the internal circuit of the IGBT circuit during the shutdown process using the first voltage value input is obtained in real time.

[0028] S30: Compare the internal temperature data with a preset temperature safety threshold, and if the internal temperature data is greater than the temperature safety threshold, generate an adjustment coefficient.

[0029] In this embodiment, the temperature safety threshold refers to the temperature value of the internal circuit of the IGBT circuit in a normal state, and the adjustment coefficient refers to the adjustment ratio of the voltage input to the IGBT circuit for shutdown.

[0030] Specifically, the circuit temperature value of the internal circuit of the IGBT circuit is compared with the temperature value of the internal circuit in a normal state. When the circuit temperature value of the internal circuit of the IGBT circuit is higher than the temperature value of the internal circuit in a normal state, the voltage input to the IGBT circuit for shutdown is adjusted.

[0031] S40: Inputting the adjustment coefficient into the first voltage data to obtain second voltage data, and adjusting the voltage input to the IGBT circuit according to the second voltage data.

[0032] In this embodiment, the second voltage data refers to the second voltage value that is adjusted and input to the IGBT circuit for shutting down.

[0033] Specifically, when the circuit temperature value of the internal circuit of the IGBT circuit is higher than the temperature value of the internal circuit under normal conditions, the IGBT circuit selects a second voltage value input for shutdown, wherein the second voltage value is greater than or equal to the first voltage value, and the duty cycle of the second voltage value is greater than or equal to zero.

[0034] In this embodiment, during the normal operation of the IGBT circuit, parameter data of the gate of the IGBT is collected in real time, and the parameter data is used to determine in real time whether the IGBT circuit fails. When the IGBT circuit fails, the IGBT circuit maintains the first voltage data input, and the temperature data inside the IGBT circuit during the shutdown process using the first voltage data input is obtained in real time, and the temperature data inside the IGBT circuit is compared with a preset temperature safety threshold for judgment. When the temperature inside the IGBT circuit rises and exceeds the temperature safety threshold, an adjustment coefficient is generated, and based on the adjustment coefficient, the first voltage data input to the IGBT circuit is adjusted to obtain the second voltage data, so that the IGBT circuit selects the second voltage data input for shutdown, so that when the IGBT circuit fails, the first voltage data is used in time to shut down the IGBT circuit, which can improve the protection performance of the IGBT circuit. During the IGBT shutdown process, the temperature change in the IGBT circuit is recorded in real time. When the temperature in the IGBT circuit is higher than the temperature safety threshold, the voltage input to the IGBT circuit during the shutdown process is adjusted, and the IGBT circuit uses the second voltage data input for shutdown, which effectively improves the safety performance of the IGBT circuit. In one embodiment, if Figure 2 As shown, in step S10, the parameter data of the gate of the IGBT is obtained according to a preset timing cycle, and whether the IGBT circuit is faulty is determined based on the parameter data, which specifically includes: S11: Acquire current data of the IGBT gate in real time, and construct an IGBT state model based on the current data.

[0035] In this embodiment, the IGBT state model refers to a model that simulates the working state of the IGBT circuit.

[0036] Specifically, during the operation of the IGBT circuit, the current data of the IGBT gate is recorded in real time, and the current data of the IGBT gate is used to simulate and construct a model of the current working state of the IGBT circuit, so as to analyze the working state of the IGBT circuit.

[0037] S12: Analyze the IGBT state model to obtain state parameters of the IGBT circuit, and determine the health status of the IGBT circuit based on the state parameters.

[0038] Specifically, by collecting the current data on the gate of the IGBT circuit in real time, the current data on the IGBT gate is used to construct a state model of the current IGBT circuit, and by analyzing the IGBT state model, the current health status of the IGBT circuit is obtained, and then it can be determined whether the IGBT circuit has a fault, and whether the IGBT circuit has a fault function can be monitored in real time.

[0039] In one embodiment, if Figure 3 As shown, after step S11, that is, after acquiring the current data of the IGBT gate in real time and building the IGBT state model based on the current data, the IGBT breakdown fast detection method based on the DSP control algorithm further includes: S101: Acquire current working environment temperature data of the IGBT circuit in real time, and construct a temperature simulation coefficient based on the working environment temperature data.

[0040] In this embodiment, the working environment temperature data refers to the ambient temperature during the current working process of the IGBT circuit, and the temperature simulation coefficient refers to the temperature influence factor.

[0041] Specifically, during the operation of the IGBT circuit, the ambient temperature and the change of the ambient temperature during the current operation of the IGBT circuit are recorded in real time, and the ambient temperature and the change of the ambient temperature are used to establish a temperature influence factor of the simulated ambient temperature.

[0042] S102: Inputting the temperature simulation coefficient into an IGBT state model to obtain a temperature-IGBT state simulation model.

[0043] In this embodiment, the temperature-IGBT state simulation model refers to a state simulation model that adds consideration of the effect of ambient temperature changes on the working state of the IGBT circuit.

[0044] Specifically, the temperature simulation coefficient is input into the constructed IGBT state model to obtain the temperature-IGBR state simulation model of the IGBT circuit. In the process of monitoring the working state of the IGBT circuit, the working environment temperature of the IGBT circuit is used as an influencing factor, thereby improving the state monitoring accuracy of the IGBT circuit and being able to more accurately monitor whether the IGBT circuit is faulty.

[0045] In one embodiment, if Figure 4As shown, in step S12, the IGBT state model is analyzed to obtain the state parameters of the IGBT circuit, and the health status of the IGBT circuit is determined based on the state parameters, which specifically includes: S121: Acquire a working simulation charge value of the IGBT circuit based on the IGBT state model, and use the working simulation charge value as a state parameter.

[0046] In this embodiment, the working simulation charge value refers to the charge value generated by the IGBT circuit during operation.

[0047] Specifically, the IGBT state model is analyzed to obtain a working simulation curve diagram of the IGBT circuit, and a working simulation charge value is obtained by integrating the working simulation curve diagram of the IGBT circuit. The working simulation charge value is the state parameter of the IGBT circuit.

[0048] S122: Compare the working simulation charge value with a preset normal charge value, and determine the fault type according to the comparison result.

[0049] Specifically, by comparing the obtained working simulation charge value with the preset normal charge value and analyzing different comparison results, it is possible to further determine whether a fault occurs in the IGBT circuit and the type of fault that occurs.

[0050] Further, when the working simulation charge value is 0, it can be determined that the IGBT of the IGBT circuit has an open circuit fault. When the working simulation charge value is not 0, according to the working simulation charge value of the IGBT when the IGBT circuit fails, it is determined that the IGBT circuit has a short circuit fault.

[0051] In one embodiment, if Figure 5 As shown, in step S40, the adjustment coefficient is input into the first voltage data to obtain the second voltage data, and the voltage input into the IGBT circuit is adjusted according to the second voltage data, specifically including: S41: generating a corresponding adjustment control signal according to the adjustment coefficient, and adjusting the first voltage data to second voltage data based on the adjustment control signal.

[0052] In this embodiment, the adjustment control signal refers to a control signal for adjusting a voltage input to the IGBT circuit.

[0053] Specifically, when the temperature inside the IGBT circuit is too high, a corresponding adjustment control signal is generated according to the adjustment coefficient, and the adjustment control signal is input to the power supply that generates the first voltage data, and the first voltage data is adjusted to the second voltage data output, so that the IGBT circuit is shut down using the second voltage data input.

[0054] S60: Acquire a voltage input to the IGBT circuit based on the second voltage data.

[0055] Specifically, during the IGBT shutdown process, the temperature changes in the IGBT circuit are recorded in real time. When the temperature in the IGBT circuit is higher than the temperature safety threshold, the voltage input to the IGBT circuit for the shutdown process will be adjusted. The IGBT circuit uses the second voltage data input for shutdown, which effectively improves the safety performance of the IGBT circuit.

[0056] It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0057] In one embodiment, a device for rapid IGBT breakdown detection based on a DSP control algorithm is provided, and the device for rapid IGBT breakdown detection based on a DSP control algorithm corresponds one-to-one to the method for rapid IGBT breakdown detection based on a DSP control algorithm in the above embodiment. Figure 6 As shown, the IGBT breakdown rapid detection device based on DSP control algorithm includes a fault judgment module, an internal temperature monitoring module, a protection module and an adjustment module. The detailed description of each functional module is as follows: A fault judgment module is used to obtain parameter data of the gate of the IGBT according to a preset timing cycle, and judge whether the IGBT circuit is faulty based on the parameter data; An internal temperature monitoring module, used for acquiring internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit in real time when a fault occurs in the IGBT circuit; A protection module, used for comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment module is used to input the adjustment coefficient into the first voltage data to obtain the second voltage data, and adjust the voltage input to the IGBT circuit according to the second voltage data.

[0058] Optionally, the fault judgment module includes: The state model submodule is used to obtain the current data of the IGBT gate in real time and build the IGBT state model based on the current data; The state analysis submodule is used to analyze the IGBT state model to obtain state parameters of the IGBT circuit and determine the health status of the IGBT circuit based on the state parameters.

[0059] For the specific definition of the IGBT breakdown rapid detection device based on the DSP control algorithm, please refer to the definition of the IGBT breakdown rapid detection method based on the DSP control algorithm above, which will not be repeated here. Each module in the above-mentioned IGBT breakdown rapid detection device based on the DSP control algorithm can be implemented in whole or in part by software, hardware and a combination thereof. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0060] In one embodiment, a computer device is provided. The computer device may be a server, and its internal structure diagram may be as follows: Figure 7 As shown. The computer device includes a processor, a memory, a network interface and a database connected through a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used for parameter data, internal temperature data, first voltage data and second voltage data. The network interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a method for rapid detection of IGBT breakdown based on a DSP control algorithm is implemented.

[0061] In one embodiment, a computer device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the following steps when executing the computer program: Acquire parameter data of the gate of the IGBT according to a preset timing cycle, and determine whether the IGBT circuit is faulty based on the parameter data; When the IGBT circuit fails, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are acquired in real time; Comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment coefficient is input into the first voltage data to obtain the second voltage data, and the voltage input into the IGBT circuit is adjusted according to the second voltage data.

[0062] In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented: Acquire parameter data of the gate of the IGBT according to a preset timing cycle, and determine whether the IGBT circuit is faulty based on the parameter data; When the IGBT circuit fails, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are acquired in real time; Comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment coefficient is input into the first voltage data to obtain the second voltage data, and the voltage input into the IGBT circuit is adjusted according to the second voltage data.

[0063] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0064] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above.

[0065] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A method for rapid detection of IGBT breakdown based on DSP control algorithm, characterized in that: The IGBT breakdown rapid detection method based on the DSP control algorithm comprises the following steps: Acquire parameter data of the gate of the IGBT according to a preset timing cycle, and determine whether the IGBT circuit is faulty based on the parameter data; When the IGBT circuit fails, internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit are acquired in real time; Comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment coefficient is input into the first voltage data to obtain the second voltage data, and the voltage input into the IGBT circuit is adjusted according to the second voltage data.

2. The IGBT breakdown rapid detection method based on DSP control algorithm according to claim 1 is characterized in that: The step of acquiring the gate parameter data of the IGBT according to the preset timing cycle and determining whether the IGBT circuit is faulty based on the parameter data specifically includes: Acquire current data of the IGBT gate in real time, and construct an IGBT state model based on the current data; The IGBT state model is analyzed to obtain state parameters of the IGBT circuit, and the health status of the IGBT circuit is determined based on the state parameters.

3. The IGBT breakdown rapid detection method based on DSP control algorithm according to claim 2 is characterized in that: After acquiring the current data of the IGBT gate in real time and building the IGBT state model based on the current data, the IGBT breakdown rapid detection method based on the DSP control algorithm further includes: Acquire the current working environment temperature data of the IGBT circuit in real time, and construct a temperature simulation coefficient based on the working environment temperature data; The temperature simulation coefficient is input into the IGBT state model to obtain a temperature-IGBT state simulation model.

4. The IGBT breakdown rapid detection method based on DSP control algorithm according to claim 2 is characterized in that: The analyzing the IGBT state model to obtain state parameters of the IGBT circuit, and determining the health status of the IGBT circuit based on the state parameters specifically includes: Acquire a working simulation charge value of the IGBT circuit based on the IGBT state model, and use the working simulation charge value as a state parameter; The working simulated charge value is compared with a preset normal charge value, and the fault type is determined according to the comparison result.

5. The IGBT breakdown rapid detection method based on DSP control algorithm according to claim 1 is characterized in that: The step of inputting the adjustment coefficient into the first voltage data to obtain the second voltage data, and adjusting the voltage input to the IGBT circuit according to the second voltage data, specifically includes: generating a corresponding adjustment control signal according to the adjustment coefficient, and adjusting the first voltage data to second voltage data based on the adjustment control signal; A voltage input to the IGBT circuit is acquired based on the second voltage data.

6. An IGBT breakdown rapid detection device based on DSP control algorithm, characterized in that: The IGBT breakdown fast detection device based on DSP control algorithm comprises: A fault judgment module is used to obtain parameter data of the gate of the IGBT according to a preset timing cycle, and judge whether the IGBT circuit is faulty based on the parameter data; An internal temperature monitoring module, used for acquiring internal temperature data of the IGBT circuit and first voltage data input to the IGBT circuit in real time when a fault occurs in the IGBT circuit; A protection module, used for comparing the internal temperature data with a preset temperature safety threshold, and generating an adjustment coefficient if the internal temperature data is greater than the temperature safety threshold; The adjustment module is used to input the adjustment coefficient into the first voltage data to obtain the second voltage data, and adjust the voltage input to the IGBT circuit according to the second voltage data.

7. The IGBT breakdown rapid detection device based on DSP control algorithm according to claim 6 is characterized in that: The fault judgment module comprises: The state model submodule is used to obtain the current data of the IGBT gate in real time and build the IGBT state model based on the current data; The state analysis submodule is used to analyze the IGBT state model to obtain state parameters of the IGBT circuit and determine the health status of the IGBT circuit based on the state parameters.

8. The IGBT breakdown rapid detection device based on DSP control algorithm according to claim 6 is characterized in that: The IGBT breakdown rapid detection device based on the DSP control algorithm also includes: The ambient temperature acquisition module is used to acquire the current working ambient temperature data of the IGBT circuit in real time, construct a temperature simulation coefficient based on the working ambient temperature data, input the temperature simulation coefficient into the IGBT state model, and obtain a temperature-IGBT state simulation model.

9. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the steps of the IGBT breakdown rapid detection method based on the DSP control algorithm as described in any one of claims 1 to 5 are implemented.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of a method for rapid IGBT breakdown detection based on a DSP control algorithm as claimed in any one of claims 1 to 5 are implemented.

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