Light-emitting device, display panel and display device

Abstract

The invention provides a light-emitting device, a display panel and a display device. The light emitting device includes a base layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer comprises a first semiconductor structure and a first enclosure structure, the first semiconductor structure is arranged on one side of the substrate layer, the first enclosure structure and the light-emitting layer are arranged on the surface, back to the substrate layer, of the first semiconductor structure, and the first enclosure structure is connected with the light-emitting layer. The second semiconductor layer comprises a second semiconductor structure and a second enclosure structure, the second semiconductor structure is arranged on the surface, back to the first semiconductor structure, of the light-emitting layer, the second enclosure structure is arranged on the surface, facing the first semiconductor structure, of the second semiconductor structure, and the second enclosure structure is connected with the light-emitting layer. Therefore, by arranging the first enclosure structure and the second enclosure structure, the contact area between the first semiconductor layer and the light-emitting layer and the contact area between the second semiconductor layer and the light-emitting layer are increased, and the recombination probability of the first charges and the second charges in the light-emitting layer is increased.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device, a display panel having the light-emitting device, and a display device having the display panel. Background Art

[0002] Light-emitting devices such as Micro Light Emitting Diode (Micro LED) and sub-millimeter light-emitting diode (Mini Light Emitting Diode, Mini LED) have the advantages of high brightness, high color saturation, high resolution, fast response speed, and low power consumption. With the maturity of the process and the reduction of prices, light-emitting devices such as Micro LED and Mini LED have been widely used in the display field.

[0003] Generally speaking, both Micro LED and Mini LED include a light-emitting layer for recombination of electrons and holes and emission of light. However, in the prior art, the recombination probability of electrons and holes in the light-emitting layer is often low, resulting in low luminous efficiency of light-emitting devices such as Micro LED and Mini LED.

[0004] Therefore, how to increase the recombination probability of electrons and holes in the light-emitting layer to improve the luminous efficiency of light-emitting devices such as Micro LED and Mini LED is an urgent problem to be solved by technical personnel in this field. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a light-emitting device, a display panel having the light-emitting device, and a display device having the display panel, which aims to increase the recombination probability of electrons and holes in the light-emitting layer to improve the luminous efficiency of light-emitting devices such as Micro LED and Mini LED.

[0006] In order to solve the above technical problems, an embodiment of the present application provides a light-emitting device, which includes a substrate layer, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are respectively used to provide the light-emitting layer with a first charge and a second charge so that the light-emitting layer emits light. The first semiconductor layer includes a first semiconductor structure and a first enclosure structure, wherein the first semiconductor structure is arranged on one side of the substrate layer, the first enclosure structure and the light-emitting layer are both arranged on the surface of the first semiconductor structure facing away from the substrate layer, the first enclosure structure is connected to the light-emitting layer, and is spaced from the second semiconductor layer. The second semiconductor layer includes a second semiconductor structure and a second enclosure structure, wherein the second semiconductor structure is arranged on the surface of the light-emitting layer facing away from the first semiconductor structure, the second enclosure structure is arranged on the surface of the second semiconductor structure facing the first semiconductor structure, and the second enclosure structure is connected to the light-emitting layer, and is spaced from the first semiconductor structure.

[0007] To summarize, the light-emitting device provided in the embodiment of the present application increases the contact area between the first semiconductor layer and the light-emitting layer by setting the first enclosure structure, so that a larger number of first charges can enter the light-emitting layer from the first semiconductor layer. By setting the second enclosure structure, the contact area between the second semiconductor layer and the light-emitting layer is increased, so that a larger number of second charges can enter the light-emitting layer from the second semiconductor layer, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer, improving the luminous efficiency of the light-emitting layer, and further improving the luminous efficiency and luminous intensity of the light-emitting device.

[0008] In an exemplary embodiment, the light-emitting device further includes a first insulating layer and a second insulating layer, the first insulating layer being disposed on a surface of the light-emitting layer facing away from the first semiconductor structure and being located between the second semiconductor structure and the first enclosing structure, the first insulating layer being used to isolate the first semiconductor layer from the second semiconductor layer; the second insulating layer being disposed on a surface of the light-emitting layer facing away from the second semiconductor structure and a surface of the second enclosing structure facing away from the second semiconductor structure, and being located between the first semiconductor structure and the second enclosing structure, the second insulating layer being used to isolate the first semiconductor layer from the second semiconductor layer.

[0009] In an exemplary embodiment, the first enclosure structure includes a first bearing surface, the first bearing surface is the surface of the first enclosure structure facing away from the first semiconductor structure, the first bearing surface is flush with the surface of the light-emitting layer facing away from the first semiconductor structure, or, in the direction from the base layer to the second semiconductor structure, the first bearing surface is higher than the surface of the light-emitting layer facing away from the first semiconductor structure. The second enclosure structure includes a second bearing surface, the second bearing surface is the surface of the second enclosure structure facing away from the second semiconductor structure, the second bearing surface is flush with the surface of the light-emitting layer facing away from the second semiconductor structure, or, in the direction from the second semiconductor structure to the base layer, the second bearing surface is higher than the surface of the light-emitting layer facing away from the second semiconductor structure.

[0010] In an exemplary embodiment, the light-emitting device also includes a first electrode and a second electrode, the first electrode is arranged on a portion of the first supporting surface and is electrically connected to the first semiconductor layer, and the second electrode is arranged on a portion of the surface of the second semiconductor structure of the second semiconductor layer facing away from the light-emitting layer and is electrically connected to the second semiconductor layer.

[0011] In an exemplary embodiment, the first semiconductor layer includes a first semiconductor structure and a first enclosure structure protruding from an edge of one side of the first semiconductor structure, and the second semiconductor layer includes a second semiconductor structure and a second enclosure structure protruding from an edge of one side of the second semiconductor structure, and the second enclosure structure is staggered with the first enclosure structure. The first semiconductor structure, the second semiconductor structure, one of the first enclosure structures, and one of the second enclosure structures are arranged to form an accommodation space, so as to enclose the light-emitting layer in the accommodation space.

[0012] In an exemplary embodiment, the first semiconductor layer includes a first semiconductor structure and two first enclosing structures protruding from the edges of both sides of the first semiconductor structure, and the second semiconductor layer includes a second semiconductor structure and two second enclosing structures protruding from the edges of both sides of the second semiconductor structure, and the two second enclosing structures are staggered with the two first enclosing structures; the first semiconductor structure, the second semiconductor structure, the two first enclosing structures and the two second enclosing structures are arranged to form an accommodating space to enclose the light-emitting layer in the accommodating space.

[0013] In an exemplary embodiment, the light emitting device may further include a plurality of light concentrating elements, which are sequentially arranged in the base layer and close to the first semiconductor layer, and the light concentrating elements are used to concentrate the light incident on the light concentrating elements and transmit the light out of the light concentrating elements.

[0014] In an exemplary embodiment, the light emitting layer includes a first connection surface and a second connection surface, the first connection surface is a surface where the light emitting layer is connected to the first semiconductor layer, and the second connection surface is a surface where the light emitting layer is connected to the second semiconductor layer. The first connection surface is set as an uneven surface; and / or the second connection surface is set as an uneven surface.

[0015] Based on the same inventive concept, an embodiment of the present application further provides a display panel, which includes a driving substrate and a plurality of the above-mentioned light-emitting devices, wherein the plurality of the light-emitting devices are arranged on one side of the driving substrate and are electrically connected to the driving substrate.

[0016] Based on the same inventive concept, an embodiment of the present application further provides a display device, which includes a housing and the above-mentioned display panel, wherein the display panel is disposed in the housing, and a light emitting side of the display panel is exposed from the housing.

[0017] In summary, in the display panel and display device provided in the embodiments of the present application, the display device includes a housing and a display panel, the display panel includes a driving substrate and a plurality of light-emitting devices, each of the light-emitting devices includes a stacked base layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer, the first semiconductor layer is used to provide a first charge to the light-emitting layer, the second semiconductor layer is used to provide a second charge to the light-emitting layer, and the light-emitting layer is used to recombine the first charge and the second charge and emit light. The first semiconductor layer includes a first semiconductor structure and a first enclosure structure, the first enclosure structure and the light-emitting layer are both arranged on the surface of the first semiconductor structure facing away from the base layer, the first enclosure structure is connected to the light-emitting layer and is spaced from the second semiconductor layer. The second semiconductor layer includes a second semiconductor structure and a second enclosure structure, the second semiconductor structure is arranged on the surface of the light-emitting layer facing away from the first semiconductor structure, the second enclosure structure is arranged on the surface of the second semiconductor structure facing the first semiconductor structure, the second enclosure structure is connected to the light-emitting layer and is spaced from the first semiconductor structure. Therefore, by setting the first enclosing structure, the contact area between the first semiconductor layer and the light-emitting layer is increased, so that more first charges can enter the light-emitting layer from the first semiconductor layer. By setting the second enclosing structure, the contact area between the second semiconductor layer and the light-emitting layer is increased, so that more second charges can enter the light-emitting layer from the second semiconductor layer, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer, improving the luminous efficiency of the light-emitting layer, and further improving the luminous efficiency and luminous intensity of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 This is a schematic diagram of the layer structure of a light-emitting device disclosed in the first embodiment of the present application.

[0020] Figure 2 for Figure 1 A schematic diagram of the top structure of the light emitting device shown.

[0021] Figure 3 This is a schematic diagram of a first three-dimensional structure of a light-emitting device disclosed in the first embodiment of the present application.

[0022] Figure 4 This is a schematic diagram of the second three-dimensional structure of the light-emitting device disclosed in the first embodiment of the present application.

[0023] Figure 5 This is a schematic diagram of the layer structure of a display panel disclosed in the second embodiment of the present application.

[0024] Figure 6 This is a schematic diagram of the layer structure of a display device disclosed in the third embodiment of the present application.

[0025] Description of reference numerals:

[0026] 100-light-emitting device; 10-base layer; 20-first semiconductor layer; 21-first semiconductor structure; 23-first enclosure structure; 231-first bearing surface; 30-light-emitting layer; 50-second semiconductor layer; 51-second semiconductor structure; 53-second enclosure structure; 531-second bearing surface; 60-first insulating layer; 70-second insulating layer; 80-first electrode; 90-second electrode; 1100-display panel; 300-driving substrate; 101-first light-emitting device; 102-second light-emitting device; 103-third light-emitting device; 110-light-emitting unit; 1000-display device; 1200-housing. DETAILED DESCRIPTION

[0027] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0028] The following descriptions of the embodiments are with reference to the attached diagrams to illustrate specific embodiments that the present application can be used to implement. The serial numbers for the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in the present application, unless otherwise specified, include direct and indirect connections (couplings). The directional terms mentioned in the present application, such as "upper", "lower", "front", "back", "left", "right", "inside", "outside", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the present application, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application.

[0029] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be fixedly connected, detachably connected, or integrally connected; it can be mechanically connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances. It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including", "may include", "include", or "may include" used in this application indicate the existence of the corresponding functions, operations, elements, etc. disclosed, and do not limit one or more other functions, operations, elements, etc. In addition, the terms "including" or "include" indicate the existence of the corresponding features, numbers, steps, operations, elements, components, or combinations thereof disclosed in the specification, and do not exclude the existence or addition of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, and are intended to cover non-exclusive inclusions.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0031] See also Figure 1 and Figure 2 , Figure 1 Schematic diagram of the layer structure of a light-emitting device disclosed in the first embodiment of the present application, Figure 2 for Figure 1 The schematic diagram of the top view of the light emitting device is shown in FIG. Figure 1 and Figure 2As shown, the light emitting device 100 provided in the first embodiment of the present application includes a substrate layer 10, a first semiconductor layer 20, a light emitting layer 30 and a second semiconductor layer 50, wherein the first semiconductor layer 20 is disposed on a surface of the substrate layer 10, the light emitting layer 30 is disposed on a portion of the surface of the first semiconductor layer 20 facing away from the substrate layer 10, and the second semiconductor layer 50 is disposed on a surface of the light emitting layer 30 facing away from the first semiconductor layer 20. The first semiconductor layer 20 is used to provide the first charge to the light emitting layer 30, the second semiconductor layer 50 is used to provide the second charge to the light emitting layer 30, and the light emitting layer 30 is used to recombine the first charge and the second charge and emit light.

[0032] In the embodiment of the present application, the first semiconductor layer 20 includes a first semiconductor structure 21 and a first enclosure structure 23 which are stacked, the first semiconductor structure 21 being disposed on a surface of the substrate layer 10, the first enclosure structure 23 and the light-emitting layer 30 being disposed on the surface of the first semiconductor structure 21 facing away from the substrate layer 10, and the first enclosure structure 23 connecting the light-emitting layer 30 and being spaced apart from the second semiconductor layer 50. That is, the orthographic projections of the first enclosure structure 23 and the light-emitting layer 30 on the substrate layer 10 are both located within the orthographic projection of the first semiconductor structure 21 on the substrate layer 10, and the orthographic projection of the first enclosure structure 23 on the substrate layer 10 is adjacent to the orthographic projection of the light-emitting layer 30 on the substrate layer 10. Therefore, by providing the first enclosure structure 23, the contact area between the first semiconductor layer 20 and the light-emitting layer 30 is increased, so that more first charges can enter the light-emitting layer 30 from the first semiconductor layer 20, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30.

[0033] In this application implementation mode, please refer to Figure 1 , the first enclosure structure 23 includes a first bearing surface 231, which is the surface of the first enclosure structure 23 facing away from the first semiconductor structure 21 and not covered by the light-emitting layer 30. The first bearing surface 231 is substantially flush with the surface of the light-emitting layer 30 facing away from the first semiconductor structure 21, or the first bearing surface 231 is slightly higher than the surface of the light-emitting layer 30 facing away from the first semiconductor structure 21, so that the side of the first enclosure structure 23 is in full contact with the light-emitting layer 30, thereby allowing more first charges to enter the light-emitting layer 30 from the first semiconductor layer 20. That is, the thickness of the first enclosure structure 23 is greater than or equal to the thickness of the light-emitting layer 30. That is, in the direction from the base layer 10 to the second semiconductor structure 51, the first bearing surface 231 is slightly higher than the surface of the light-emitting layer 30 facing away from the first semiconductor structure 21.

[0034] In the embodiment of the present application, the second semiconductor layer 50 includes a second semiconductor structure 51 and a second enclosure structure 53 which are stacked. The second semiconductor structure 51 is arranged on the surface of the light-emitting layer 30 facing away from the first semiconductor structure 21, that is, the substrate 10, the first semiconductor structure 21, the light-emitting layer 30 and the second semiconductor structure 51 are stacked in sequence. The second enclosure structure 53 is arranged on the surface of the second semiconductor structure 51 facing the first semiconductor structure 21, and the second enclosure structure 53 is connected to the light-emitting layer 30 and is spaced from the first semiconductor structure 21. That is, the orthographic projection of the second enclosure structure 53 on the substrate 10 is located within the orthographic projection of the second semiconductor structure 51 on the substrate 10, and the orthographic projection of the second enclosure structure 53 on the substrate 10 is adjacent to the orthographic projection of the light-emitting layer 30 on the substrate 10. Therefore, by setting the second enclosure structure 53, the contact area between the second semiconductor layer 50 and the light-emitting layer 30 is increased, so that more second charges can enter the light-emitting layer 30 from the second semiconductor layer 50, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30.

[0035] In this application implementation mode, please refer to Figure 1 , the second enclosure structure 53 includes a second bearing surface 531, which is the surface of the second enclosure structure 53 facing away from the second semiconductor structure 51 and not covered by the light-emitting layer 30. The second bearing surface 531 is substantially flush with the surface of the light-emitting layer 30 facing away from the second semiconductor structure 51, or the second bearing surface 531 is slightly higher than the surface of the light-emitting layer 30 facing away from the second semiconductor structure 51, so that the side of the second enclosure structure 53 is in full contact with the light-emitting layer 30, thereby allowing more second charges to enter the light-emitting layer 30 from the second semiconductor layer 50. That is, the thickness of the second enclosure structure 53 is greater than or equal to the thickness of the light-emitting layer 30. That is, in the direction in which the second semiconductor structure 51 points to the base layer 10, the second bearing surface 531 is higher than the surface of the light-emitting layer 30 facing away from the second semiconductor structure 51.

[0036] It can be understood that, in an exemplary embodiment, the first semiconductor layer 20 can be formed in one piece, that is, the first semiconductor structure 21 extends and protrudes along the edge position toward the direction of the second semiconductor layer 50 to form the first enclosure structure 23, and the first enclosure structure 23 is in contact with one side of the light-emitting layer 30 and is in full contact with the light-emitting layer 30. The second semiconductor layer 50 can be formed in one piece, that is, the second semiconductor structure 51 extends and protrudes along the edge position toward the direction of the first semiconductor structure 21 to form the second enclosure structure 53, the second enclosure structure 53 is staggered with the first enclosure structure 23, and is in contact with the other side of the light-emitting layer 30 and is in full contact with the light-emitting layer 30.

[0037] In the embodiment of the present application, the first semiconductor structure 21 is located on a surface of the light emitting layer 30 (eg Figure 1 The second semiconductor structure 51 is located on the other surface of the light emitting layer 30 facing away from the first semiconductor structure 21 (such as Figure 1 The first enclosure structure 23 is located on a side surface of the light-emitting layer 30 (such as Figure 1 The second enclosure structure 53 is located on the other side of the light-emitting layer 30 facing away from the first enclosure structure 23 (such as Figure 1 That is, the first semiconductor structure 21, the second semiconductor structure 51, the first enclosure structure 23 and the second enclosure structure 53 are arranged to form an accommodation space, so that the light-emitting layer 30 is enclosed in the accommodation space, so that the contact area between the first semiconductor layer 20 and the second semiconductor layer 50 and the light-emitting layer 30 is as large as possible, so that more first charges and second charges can enter the light-emitting layer 30, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30.

[0038] In the embodiment of the present application, the light emitting device 100 may be a micro light emitting diode (Micro Light Emitting Diode, Micro LED). Exemplarily, the light emitting device 100 may be a Micro LED, which refers to an LED chip with a grain size of less than 100 microns, capable of realizing a display screen with pixel particles of 0.05 mm or less. Micro LED has very low power consumption, good material stability and no image retention. In some embodiments, the light emitting device 100 may also be a Mini LED, which refers to an LED chip with a grain size of approximately 100 microns to 1000 microns. Mini LED has a high yield, has a special-shaped cutting feature, and can form a high-curved backlight form with a soft substrate layer, and has better color rendering, but is not limited thereto.

[0039] It can be understood that, by setting the first enclosure structure 23, the contact area between the first semiconductor layer 20 and the light-emitting layer 30 of the light-emitting device 100 of the present application is increased, so that more first charges can enter the light-emitting layer 30 from the first semiconductor layer 20. By setting the second enclosure structure 53, the contact area between the second semiconductor layer 50 and the light-emitting layer 30 is increased, so that more second charges can enter the light-emitting layer 30 from the second semiconductor layer 50, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and further improving the luminous efficiency and luminous intensity of the light-emitting device 100.

[0040] In the embodiment of the present application, in the light-emitting layer 30, the first charges transmitted to the light-emitting layer 30 via the first semiconductor layer 20 and the second charges transmitted to the light-emitting layer 30 via the second semiconductor layer 50 are recombined in the light-emitting layer 30 to make the light-emitting layer 30 emit light. Therefore, the light-emitting layer 30 is also called a hole-electron recombination layer. The first charges are electrons and the second charges are holes; or the first charges are holes and the second charges are electrons.

[0041] In one specific embodiment, the light emitting layer 30 is a multi-quantum well (MQW) layer.

[0042] In an exemplary embodiment, the first semiconductor layer 20 may be an N-type doped GaN layer, and the second semiconductor layer 50 may be a P-type doped GaN layer; or, the first semiconductor layer 20 may be a P-type doped GaN layer, and the second semiconductor layer 50 may be an N-type doped GaN layer.

[0043] In the embodiment of the present application, the base layer 10 may be a flexible substrate, for example, the base layer 10 may be made of any one or more of the following materials: polyimide, polyethylene terephthalate (PET), polyethylene naphthalate diformicacid glycol ester (PEN), polycarbonate (PC), polystyrene (PS), cycloolefin polymer (COP), polypropylene (PP), polytetrafluoroethylene (PTFE). In other implementations, the base layer 10 may also be a non-flexible substrate, such as glass, ceramics, etc., which is not limited in the present application.

[0044] In the embodiments of the present application, Figure 1 As shown, the light emitting device 100 further includes a first insulating layer 60 and a second insulating layer 70. The first insulating layer 60 is disposed on the surface of the light emitting layer 30 facing away from the first semiconductor structure 21 and is located between the second semiconductor structure 51 and the first enclosure structure 23. The first insulating layer 60 is used to isolate the first semiconductor layer 20 and the second semiconductor layer 50 to prevent a short circuit between the first semiconductor layer 20 and the second semiconductor layer 50. The second insulating layer 70 is disposed on the surface of the light emitting layer 30 facing away from the second semiconductor structure 51 and the surface of the second enclosure structure 53 facing away from the second semiconductor structure 51 and is located between the first semiconductor structure 21 and the second enclosure structure 53. The second insulating layer 70 is used to isolate the first semiconductor layer 20 and the second semiconductor layer 50 to prevent a short circuit between the first semiconductor layer 20 and the second semiconductor layer 50.

[0045] Specifically, the first insulating layer 60 is disposed on the surface of the light emitting layer 30 facing away from the first semiconductor structure 21, and is connected to the side of the second semiconductor structure 51 opposite to the second enclosure structure 53, so that the first insulating layer 60 separates the first semiconductor layer 20 from the second semiconductor layer 50. The second insulating layer 70 is disposed on the surface of the light emitting layer 30 facing away from the second semiconductor structure 51 and the second bearing surface 531, and is connected to the side of the first semiconductor structure 21 facing the light emitting layer 30, that is, the second insulating layer 70 is located between the first semiconductor structure 21 and the second bearing surface 531 of the second enclosure structure 53, so that the second insulating layer 70 separates the first semiconductor layer 20 from the second semiconductor layer 50. Therefore, by providing the first insulating layer 60 and the second insulating layer 70, the first semiconductor layer 20 and the second semiconductor layer 50 can be separated to prevent a short circuit between the first semiconductor layer 20 and the second semiconductor layer 50.

[0046] It should be noted that the materials of the first insulating layer 60 and the second insulating layer 70 are not specifically limited in the embodiment of the present application. The first insulating layer 60 and the second insulating layer 70 may include but are not limited to inorganic materials, such as at least one of SiO2, SiNx, SiON, Al2O3, TiO2, tantalum oxide (Ta2O5), hafnium oxide (HfO2) and zinc oxide (ZnO). It is understandable that the specific values ​​of the thickness of the first insulating layer 60 and the second insulating layer 70 can be set according to the actual values ​​of the distances between the light-emitting layer 30 and the first semiconductor layer 20 and the second semiconductor layer 50, respectively, and the embodiment of the present application does not specifically limit this.

[0047] like Figure 1 and Figure 2 As shown, the light emitting device 100 further includes a first electrode 80 and a second electrode 90. The first electrode 80 is disposed on a portion of the first supporting surface 231 and is electrically connected to the first semiconductor layer 20. The second electrode 90 is disposed on a portion of the surface of the second semiconductor structure 51 of the second semiconductor layer 50 that faces away from the light emitting layer 30 and is electrically connected to the second semiconductor layer 50.

[0048] Specifically, in the embodiment of the present application, the first electrode 80 may be an N electrode (cathode), the second electrode 90 may be a P electrode (anode), the first semiconductor layer 20 electrically connected to the first electrode 80 is an electron transport layer, and the second semiconductor layer 50 electrically connected to the second electrode 90 is a hole transport layer. In other embodiments, the first electrode 80 may be a P electrode, the second electrode 90 may be an N electrode, the first semiconductor layer 20 electrically connected to the first electrode 80 is a hole transport layer, and the second semiconductor layer 50 electrically connected to the second electrode 90 is an electron transport layer. It should be noted that the N electrode is arranged corresponding to the hole transport layer, and the P electrode is arranged corresponding to the electron transport layer. Among them, the first electrode 80 and the second electrode 90 are used to apply voltage to the light-emitting device so that current passes through the first semiconductor layer 20, the light-emitting layer 30 and the second semiconductor layer 50, thereby driving the light-emitting device 100 to emit light.

[0049] In an exemplary embodiment, the first electrode 80 and the second electrode 90 may be a metal conductive material. For example, the first electrode 80 and the second electrode 90 may include, but are not limited to, one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu).

[0050] See also Figure 3 , Figure 3 This is a schematic diagram of the first three-dimensional structure of the light-emitting device disclosed in the first embodiment of the present application. One side edge of the first semiconductor structure 21 extends and protrudes toward the direction of the second semiconductor layer 50 to form the first enclosure structure 23, that is, the first semiconductor layer 20 includes the first semiconductor structure 21 and a first enclosure structure 23 protruding from the side edge of the first semiconductor structure 21. Correspondingly, one side edge of the second semiconductor structure 51 extends and protrudes toward the direction of the first semiconductor structure 21 to form the second enclosure structure 53, and the second enclosure structure 53 is staggered with the first enclosure structure 23. That is, the second semiconductor layer 50 includes the second semiconductor structure 51 and a second enclosure structure 53 protruding from the side edge of the second semiconductor structure 51, and the second enclosure structure 53 is staggered with the first enclosure structure 23.

[0051] Specifically, Figure 3As shown, the first semiconductor structure 21 includes a first side surface 211, a second side surface 212, a third side surface 213 and a fourth side surface 214, and the first side surface 211, the second side surface 212, the third side surface 213 and the fourth side surface 214 are sequentially connected end to end to form a peripheral side surface of the first semiconductor structure 21. In the embodiment of the present application, a first enclosure structure 23 is protruded at the first side surface 211 of the first semiconductor structure 21, and extends and protrudes toward the direction of the second semiconductor layer 50.

[0052] The second semiconductor structure 51 includes a first side wall 511, a second side wall 512, a third side wall 513 and a fourth side wall 514, wherein the first side wall 511, the second side wall 512, the third side wall 513 and the fourth side wall 514 are connected end to end in sequence to form the peripheral side surface of the second semiconductor structure 51. The first side wall 511 corresponds to the position of the first side surface 211, the second side wall 512 corresponds to the position of the second side surface 212, the third side wall 513 corresponds to the position of the third side surface 213, and the fourth side wall 514 corresponds to the position of the fourth side surface 214. In the embodiment of the present application, a second enclosure structure 53 is convexly disposed at the third side wall 513 of the second semiconductor structure 51, and extends and protrudes toward the direction of the first semiconductor layer 20. Therefore, a first enclosure structure 23 and a second enclosure structure 53 are respectively located on opposite sides of the light-emitting layer 30, that is, a first enclosure structure 23 and a second enclosure structure 53 are arranged opposite to each other.

[0053] It can be understood that, in other exemplary embodiments, when one of the first enclosure structures 23 is protruding from the second side surface 212 of the first semiconductor structure 21, one of the second enclosure structures 53 is relatively protruding from the fourth side wall 514 of the second semiconductor structure 51. When one of the second enclosure structures 53 is protruding from the first side wall 511 of the second semiconductor structure 51, one of the first enclosure structures 23 is relatively protruding from the third side surface 213 of the first semiconductor structure 21. In another exemplary embodiment, one of the first enclosure structures 23 and one of the second enclosure structures 53 are staggered and not relatively arranged. For example, when one of the first enclosure structures 23 is protruding from the second side surface 212 of the first semiconductor structure 21, one of the second enclosure structures 53 may be protruding from the first side wall 511 or the third side wall 513 of the second semiconductor structure 51. When one of the second enclosure structures 53 is protruding from the first side wall 511 of the second semiconductor structure 51, one of the first enclosure structures 23 may be protruding from the second side surface 212 or the fourth side surface 214 of the first semiconductor structure 21.

[0054] See also Figure 4 , Figure 4 This is a schematic diagram of the second three-dimensional structure of the light-emitting device disclosed in the first embodiment of the present application. The light-emitting device of the second three-dimensional structure is different from the light-emitting device of the first three-dimensional structure in that: the number of the first enclosure structures 23 is two, and the number of the second enclosure structures 53 is two. For the description of the similarities between the light-emitting device of the second layer structure and the light-emitting device of the first layer structure, please refer to the relevant description of the light-emitting device of the first layer structure.

[0055] In this application implementation mode, please refer to Figure 4 The first semiconductor layer 20 includes a first semiconductor structure 21 and two first enclosure structures 23 protruding from the edges of both sides of the first semiconductor structure 21. Correspondingly, the second semiconductor layer 50 includes a second semiconductor structure 51 and two second enclosure structures 53 protruding from the edges of both sides of the second semiconductor structure 51, and the two second enclosure structures 53 are staggered with the two first enclosure structures 23.

[0056] Specifically, Figure 4 As shown, the two first enclosure structures 23 are respectively protruded at the first side surface 211 and the second side surface 212 of the first semiconductor structure 21, and extend and protrude toward the second semiconductor layer 50. The two second enclosure structures 53 are respectively protruded at the third side wall 513 and the fourth side wall 514 of the second semiconductor structure 51, and extend and protrude toward the first semiconductor layer 20. Therefore, the two first enclosure structures 23 are respectively enclosed at two adjacent sides of the light emitting layer 30, and the two second enclosure structures 53 are respectively enclosed at the other two adjacent sides of the light emitting layer 30.

[0057] It can be understood that, in other exemplary embodiments, when the two first enclosure structures 23 are respectively protruding on opposite sides of the first semiconductor structure 21, the two second enclosure structures 53 are respectively protruding on opposite sides of the second semiconductor structure 51, and are staggered with the two first enclosure structures 23. For example, when the two first enclosure structures 23 are respectively protruding on the first side surface 211 and the third side surface 213 of the first semiconductor structure 21, the two second enclosure structures 53 may be correspondingly protruding on the second side wall 512 and the fourth side wall 514 of the second semiconductor structure 51. When the two second enclosure structures 53 are respectively protruding on the first side wall 511 and the third side wall 513 of the second semiconductor structure 51, the two first enclosure structures 23 may be correspondingly protruding on the second side surface 212 and the fourth side surface 214 of the first semiconductor structure 21. Therefore, the first semiconductor structure 21, the second semiconductor structure 51, the two first enclosing structures 23 and the two second enclosing structures 53 are arranged to form an accommodating space to enclose the light-emitting layer 30 in the accommodating space, so that the first semiconductor layer 20 and the second semiconductor layer 50 are in complete contact with the entire outer surface of the light-emitting layer 30, so that more first charges and second charges can enter the light-emitting layer 30, further increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30.

[0058] In an exemplary embodiment, the surface where the light emitting layer 30 is connected to the first semiconductor layer 20 is defined as a first connection surface (not shown in the figure), and the first connection surface is set to be an uneven surface, that is, the first connection surface is not a flat surface. Accordingly, the shape of the surface where the first semiconductor layer 20 is connected to the first connection surface is complementary to the shape of the first connection surface.

[0059] It can be understood that by setting the first connecting surface connected to the first semiconductor layer 20 to an uneven surface, more first charges can enter the light-emitting layer 30 from the first semiconductor layer 20, thereby further increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and further improving the luminous efficiency of the light-emitting device 100.

[0060] It can also be understood that the surface connecting the light-emitting layer 30 and the second semiconductor layer 50 can be selectively defined as a second connection surface (not marked in the figure), and the second connection surface can also be set as an uneven surface, that is, the second connection surface is not a flat surface. Accordingly, the shape of the surface connecting the second semiconductor layer 50 and the second connection surface is complementary to the shape of the second connection surface. Therefore, by setting the second connection surface connected to the second semiconductor layer 50 as an uneven surface, more second charges can enter the light-emitting layer 30 from the second semiconductor layer 50, further increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and further improving the luminous efficiency of the light-emitting device 100.

[0061] In an exemplary embodiment, the light emitting layer 30 includes a first connection surface and a second connection surface, wherein the first connection surface is a surface where the light emitting layer 30 is connected to the first semiconductor layer 20, and the second connection surface is a surface where the light emitting layer 30 is connected to the second semiconductor layer 50. The first connection surface is set as an uneven surface; and / or the second connection surface is set as an uneven surface. The first connection surface and / or the second connection surface of the light emitting layer 30 may be a semi-ellipsoidal arc surface, a hemispherical arc surface, a serrated surface, etc., which is not specifically limited in the embodiments of the present application.

[0062] In an exemplary embodiment, the light emitting device 100 may further include a plurality of light concentrating elements (not shown), which are sequentially arranged in the base layer 10 and close to the first semiconductor layer 20. The orthographic projection of the light emitting layer 30 on the base layer 10 is located within the orthographic projection of the plurality of light concentrating elements distributed in the layer on the base layer 10, so that the light emitted by the light emitting layer 30 can be directed toward the plurality of light concentrating elements. The light concentrating element is used to concentrate the light directed toward the light concentrating element and transmit it out of the light concentrating element. The light concentrating element may be a convex lens.

[0063] It can be understood that, since the light emitted by the light emitting layer 30 is scattered in the first semiconductor layer 20, the second semiconductor layer 50 and the base layer 10, the brightness of the base layer 10 facing away from the first semiconductor layer 20 is low. Therefore, by providing a plurality of light focusing elements for focusing light in the base layer 10, it is beneficial to increase the brightness of the base layer 10 facing away from the first semiconductor layer 20.

[0064] In summary, the light-emitting device 100 provided in the embodiment of the present application includes a substrate layer 10, a first semiconductor layer 20, a light-emitting layer 30 and a second semiconductor layer 50. The first semiconductor layer 20 is used to provide a first charge to the light-emitting layer 30, and the second semiconductor layer 50 is used to provide a second charge to the light-emitting layer 30. The light-emitting layer 30 is used to recombine the first charge and the second charge and emit light. The first semiconductor layer 20 includes a first semiconductor structure 21 and a first enclosure structure 23. The first enclosure structure 23 and the light-emitting layer 30 are both arranged on the surface of the first semiconductor structure 21 facing away from the substrate layer 10, and the first enclosure structure 23 is connected to the light-emitting layer 30 and is spaced from the second semiconductor layer 50. The second semiconductor layer 50 includes a second semiconductor structure 51 and a second enclosure structure 53. The second semiconductor structure 51 is arranged on the surface of the light-emitting layer 30 facing away from the first semiconductor structure 21, and the second enclosure structure 53 is arranged on the surface of the second semiconductor structure 51 facing the first semiconductor structure 21, and the second enclosure structure 53 is connected to the light-emitting layer 30 and is spaced from the first semiconductor structure 21. Therefore, by setting the first enclosing structure 23, the contact area between the first semiconductor layer 20 and the light-emitting layer 30 is increased, so that more first charges can enter the light-emitting layer 30 from the first semiconductor layer 20. By setting the second enclosing structure 53, the contact area between the second semiconductor layer 50 and the light-emitting layer 30 is increased, so that more second charges can enter the light-emitting layer 30 from the second semiconductor layer 50, thereby increasing the recombination probability of the first charges and the second charges in the light-emitting layer 30, improving the luminous efficiency of the light-emitting layer 30, and further improving the luminous efficiency and luminous intensity of the light-emitting device 100.

[0065] Based on the same inventive concept, the second embodiment of the present application provides a display panel. Figure 5 , Figure 5 The diagram is a schematic diagram of the layer structure of a display panel disclosed in the second embodiment of the present application. The display panel 1100 provided in the embodiment of the present application includes a driving substrate 300 and a plurality of the above-mentioned light-emitting devices 100, wherein the plurality of the light-emitting devices 100 are arranged on one side of the driving substrate 300 and are electrically connected to the driving substrate 300, and the driving substrate 300 is used to transmit electrical signals to the plurality of the light-emitting devices 100 to control the plurality of the light-emitting devices 100 to emit light. Figures 1 to 4 The embodiment shown has described the light emitting device 100 in detail, which will not be repeated here. Therefore, the display panel 1100 provided in the embodiment of the present application has the technical effects of the technical solutions in any of the above embodiments, and the explanations of the structures and terms that are the same or corresponding to the above embodiments will not be repeated here.

[0066] In the embodiment of the present application, each of the light emitting devices 100 is connected to the driving substrate 300 through the first electrode 80 and the second electrode 90 to achieve electrical connection.

[0067] In an exemplary embodiment, the display panel 1100 may be a Micro LED display panel or a Mini LED display panel.

[0068] In an embodiment of the present application, the display panel 1100 may further include a third insulating layer (not shown), which is disposed on the driving substrate 300 and has a plurality of grooves, wherein the number and size of the grooves match the number and size of the light-emitting devices 100, and one of the light-emitting devices 100 is disposed in one of the grooves, and is electrically connected to the driving substrate 300, and is spaced apart from other light-emitting devices.

[0069] In the embodiment of the present application, the plurality of light-emitting devices 100 are used to emit red light, green light and blue light, and include a plurality of first light-emitting devices 101, a plurality of second light-emitting devices 102 and a plurality of third light-emitting devices 103, wherein the first light-emitting device 101 may be an R light-emitting chip for emitting red light, the second light-emitting device 102 may be a G light-emitting chip for emitting green light, and the third light-emitting device 103 may be a B light-emitting chip for emitting blue light. One first light-emitting device 101, one second light-emitting device 102 and one third light-emitting device 103 are arranged in sequence to form a light-emitting unit 110. That is, the display panel 1100 includes a plurality of light-emitting units 110, and the plurality of light-emitting units 110 are arranged in an array, and each light-emitting unit 110 includes one first light-emitting device 101, one second light-emitting device 102 and one third light-emitting device 103 arranged in sequence.

[0070] In the embodiment of the present application, the first light emitting device 101, the second light emitting device 102 and the third light emitting device 103 can be manufactured in one process flow. Moreover, the first light emitting device 101, the second light emitting device 102 and the third light emitting device 103 are connected to the driving substrate 300 as a light emitting unit 110, so that the circuit pattern of the corresponding driving substrate is more concise.

[0071] In an exemplary embodiment of the present application, the sizes of the plurality of light-emitting devices 100 are the same, that is, the sizes of the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103 are the same. That is, the orthographic projection areas of the first light-emitting device 101, the second light-emitting device 102 and the third light-emitting device 103 on the driving substrate 300 are equal. Therefore, by setting the sizes of the plurality of light-emitting devices 100 to be the same, not only the complexity of the array signal routing can be reduced and the signal wiring can be simplified, but also the difficulty of the later transfer of the light-emitting device can be reduced, and the transfer efficiency and yield can be improved. Moreover, since the sizes of the plurality of light-emitting devices 100 are consistent, they can be made with the same mask in the process flow, avoiding the separate design of the B pixel graphic design, making the production process simpler, and facilitating the alignment design, and in the case of mass transfer, the RGB light-emitting devices can be transferred at the same time.

[0072] In the exemplary embodiment of the present application, the display panel 1100 can also realize full-color display. Specifically, since the luminous intensity of the light-emitting devices of different colors is different, in order to achieve the same life of each light-emitting device when the display panel 1100 is in full-color display, it is necessary to meet the following conditions: the luminous intensity of the third light-emitting device 103 (i.e., the B light-emitting chip) is greater than the luminous intensity of the first light-emitting device 101 (i.e., the R light-emitting chip), and the luminous intensity of the first light-emitting device 101 is greater than the luminous intensity of the second light-emitting device 102 (i.e., the G light-emitting chip). Therefore, when the sizes of the first light-emitting device 101, the second light-emitting device 102, and the third light-emitting device 103 are the same, it is necessary to adjust the number of first charges and second charges entering the light-emitting layer 30 in the first semiconductor layer 20 and the second semiconductor layer 50 of each of the first light-emitting device 101, the second light-emitting device 102, and the third light-emitting device 103, respectively. The more the number of the first charge and the second charge entering the light-emitting layer 30, the higher the luminous efficiency and luminous intensity of the corresponding light-emitting device. For example, the contact area between the first semiconductor layer 20 and the second semiconductor layer 50 of the third light-emitting device 103 and the light-emitting layer 30 is greater than the contact area between the first semiconductor layer 20 and the second semiconductor layer 50 of the first light-emitting device 101 and the light-emitting layer 30, and the contact area between the first semiconductor layer 20 and the second semiconductor layer 50 of the first light-emitting device 101 and the light-emitting layer 30 is greater than the contact area between the first semiconductor layer 20 and the second semiconductor layer 50 of the second light-emitting device 102 and the light-emitting layer 30. Therefore, the number of first charges and second charges respectively entering the light-emitting layer 30 from the first semiconductor layer 20 and the second semiconductor layer 50 of the third light-emitting device 103 is greater than The number of first charges and second charges respectively entering the light emitting layer 30 from the first semiconductor layer 20 and the second semiconductor layer 50 of the first light emitting device 101 is greater than the number of first charges and second charges respectively entering the light emitting layer 30 from the first semiconductor layer 20 and the second semiconductor layer 50 of the second semiconductor device 102, and thus the luminous intensity of the third light emitting device 103 is greater than the luminous intensity of the first light emitting device 101, and the luminous intensity of the first light emitting device 101 is greater than the luminous intensity of the second light emitting device 102. Therefore, while the display panel 1100 realizes full-color display, the luminous intensities of light emitting devices of different colors are different, and the lifespans of the light emitting devices are consistent.

[0073] It is understandable that the display panel can be used for electronic devices including functions such as personal digital assistants (PDA) and / or music players, such as mobile phones, tablet computers, wearable electronic devices with wireless communication functions (such as smart watches), etc. The above-mentioned electronic devices may also be other electronic devices, such as laptop computers (Laptop) with touch-sensitive surfaces (such as touch panels), etc. In some embodiments, the electronic device may have a communication function, that is, it may establish communication with the network through 2G (second-generation mobile phone communication technology specifications), 3G (third-generation mobile phone communication technology specifications), 4G (fourth-generation mobile phone communication technology specifications), 5G (fifth-generation mobile phone communication technology specifications), 6G (sixth-generation mobile phone communication technology specifications) or WLAN (wireless local area network) or communication methods that may appear in the future. For the sake of simplicity, this embodiment of the present application is not further limited.

[0074] Based on the same inventive concept, the third embodiment of the present application also provides a display device. Figure 6 , Figure 6 The display device 1000 provided in the embodiment of the present application comprises a housing 1200 and the display panel 1100, wherein the display panel 1100 is disposed in the housing 1200, and the light emitting side of the display panel 1100 is exposed from the housing 1200.

[0075] It can be understood that the display device 1000 can be used in electronic devices including but not limited to televisions, tablet computers, laptop computers, desktop computers, mobile phones, vehicle-mounted displays, smart watches, smart bracelets, smart glasses, etc. According to the embodiments of the present application, the specific type of the display device 1000 is not particularly limited, and those skilled in the art can design it accordingly according to the specific use requirements of the display device 1000, which will not be repeated here.

[0076] In an exemplary embodiment, the display device 1000 may also include other necessary components and parts such as a power board, a high-voltage board, and a key control board. Those skilled in the art may make corresponding supplements based on the specific type and actual functions of the display device 1000, which will not be repeated here.

[0077] In other embodiments of the present application, the display device 1000 may further include a processor and a memory, wherein the processor is electrically connected to the display panel 1100 and is used to control the display panel 1100 to display. The memory is electrically connected to the processor and is used to store program codes required for the processor to run, control the display content of the display panel 1100, etc.

[0078] In an exemplary embodiment, the memory may include a volatile memory (Volatile Memory), such as a random access memory (Random Access Memory, RAM); the memory may also include a non-volatile memory (NVM), such as a read-only memory (Read Only Memory, ROM), a flash memory (Flash Memory, FM), a hard disk drive (Hard Disk Drive, HDD) or a solid state drive (SSD). The memory may also include a combination of the above-mentioned types of memory.

[0079] In an exemplary embodiment, the processor includes one or more general-purpose processors, wherein a general-purpose processor can be any type of device capable of processing electronic instructions, including a central processing unit (CPU), a microprocessor, a microcontroller, a main processor, a controller, etc. The processor is used to execute various types of digital storage instructions, such as software or firmware programs stored in the memory, which enables the computing device to provide a wide variety of services.

[0080] In summary, in the light-emitting device 100, the display panel 1100 and the display device 1000 provided in the embodiment of the present application, the display device 1000 includes a housing 1200 and a display panel 1100, the display panel 1100 includes a driving substrate 300 and a plurality of light-emitting devices 100, each of the light-emitting devices 100 includes a stacked substrate layer 10, a first semiconductor layer 20, a light-emitting layer 30 and a second semiconductor layer 50, the first semiconductor layer 20 is used to provide a first charge to the light-emitting layer 30, the second semiconductor layer 50 is used to provide a second charge to the light-emitting layer 30, and the light-emitting layer 30 is used to recombine the first charge and the second charge and emit light. The first semiconductor layer 20 includes a first semiconductor structure 21 and a first enclosure structure 23, the first enclosure structure 23 and the light-emitting layer 30 are both arranged on the surface of the first semiconductor structure 21 facing away from the substrate layer 10, and the first enclosure structure 23 is connected to the light-emitting layer 30 and is spaced from the second semiconductor layer 50. The second semiconductor layer 50 includes a second semiconductor structure 51 and a second enclosure structure 53. The second semiconductor structure 51 is disposed on the surface of the light emitting layer 30 facing away from the first semiconductor structure 21. The second enclosure structure 53 is disposed on the surface of the second semiconductor structure 51 facing the first semiconductor structure 21. The second enclosure structure 53 is connected to the light emitting layer 30 and is spaced apart from the first semiconductor structure 21. Therefore, by providing the first enclosure structure 23, the contact area between the first semiconductor layer 20 and the light emitting layer 30 is increased, so that more first charges can enter the light emitting layer 30 from the first semiconductor layer 20. By providing the second enclosure structure 53, the contact area between the second semiconductor layer 50 and the light emitting layer 30 is increased, so that more second charges can enter the light emitting layer 30 from the second semiconductor layer 50, thereby increasing the recombination probability of the first charges and the second charges in the light emitting layer 30, improving the light emitting efficiency of the light emitting layer 30, and further improving the light emitting efficiency and light intensity of the light emitting device 100.

[0081] It should be understood that the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0082] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0083] It should be understood that the application of this application is not limited to the above examples. For ordinary technicians in this field, they can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application. Ordinary technicians in this field can understand that all or part of the methods for implementing the above embodiments and equivalent changes made according to the claims of this application still fall within the scope covered by this application.

Claims

1. A light-emitting device, comprising a substrate layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are respectively used to provide a first charge and a second charge to the light-emitting layer so that the light-emitting layer emits light, characterized in that: The first semiconductor layer includes a first semiconductor structure and a first enclosure structure, the first semiconductor structure is arranged on one side of the base layer, the first enclosure structure and the light-emitting layer are both arranged on a surface of the first semiconductor structure facing away from the base layer, the first enclosure structure is connected to the light-emitting layer and is spaced from the second semiconductor layer; The second semiconductor layer includes a second semiconductor structure and a second enclosing structure. The second semiconductor structure is arranged on the surface of the light-emitting layer facing away from the first semiconductor structure. The second enclosing structure is arranged on the surface of the second semiconductor structure facing the first semiconductor structure. The second enclosing structure is connected to the light-emitting layer and is spaced apart from the first semiconductor structure.

2. The light emitting device according to claim 1, characterized in that: The light emitting device further comprises a first insulating layer and a second insulating layer, wherein the first insulating layer is disposed on a surface of the light emitting layer facing away from the first semiconductor structure and is located between the second semiconductor structure and the first enclosure structure, and the first insulating layer is used to isolate the first semiconductor layer from the second semiconductor layer; The second insulating layer is arranged on the surface of the light-emitting layer facing away from the second semiconductor structure and the surface of the second enclosure structure facing away from the second semiconductor structure, and is located between the first semiconductor structure and the second enclosure structure. The second insulating layer is used to isolate the first semiconductor layer and the second semiconductor layer.

3. The light emitting device according to claim 1, characterized in that: The first enclosure structure comprises a first bearing surface, the first bearing surface is a surface of the first enclosure structure facing away from the first semiconductor structure, the first bearing surface is flush with a surface of the light-emitting layer facing away from the first semiconductor structure, or, in a direction from the base layer to the second semiconductor structure, the first bearing surface is higher than a surface of the light-emitting layer facing away from the first semiconductor structure; The second enclosure structure includes a second bearing surface, which is the surface of the second enclosure structure facing away from the second semiconductor structure. The second bearing surface is flush with the surface of the light-emitting layer facing away from the second semiconductor structure, or, in the direction in which the second semiconductor structure points to the base layer, the second bearing surface is higher than the surface of the light-emitting layer facing away from the second semiconductor structure.

4. The light emitting device according to claim 3, characterized in that: The light-emitting device also includes a first electrode and a second electrode. The first electrode is arranged on a portion of the first supporting surface and is electrically connected to the first semiconductor layer. The second electrode is arranged on a portion of the surface of the second semiconductor structure of the second semiconductor layer facing away from the light-emitting layer and is electrically connected to the second semiconductor layer.

5. The light emitting device according to claim 1, characterized in that: The first semiconductor layer includes a first semiconductor structure and a first enclosure structure protruding from an edge of one side of the first semiconductor structure, and the second semiconductor layer includes a second semiconductor structure and a second enclosure structure protruding from an edge of one side of the second semiconductor structure, and the second enclosure structure is staggered with the first enclosure structure; The first semiconductor structure, the second semiconductor structure, the first enclosure structure and the second enclosure structure are arranged to form a containing space so as to enclose the light emitting layer in the containing space.

6. The light emitting device according to claim 1, characterized in that: The first semiconductor layer includes a first semiconductor structure and two first enclosure structures protruding at two side edges of the first semiconductor structure, and the second semiconductor layer includes a second semiconductor structure and two second enclosure structures protruding at two side edges of the second semiconductor structure, and the two second enclosure structures are staggered with the two first enclosure structures; The first semiconductor structure, the second semiconductor structure, the two first enclosure structures and the two second enclosure structures are arranged to form a containing space to enclose the light emitting layer in the containing space.

7. The light emitting device according to claim 1, characterized in that: The light emitting device may further include a plurality of light concentrating elements, which are sequentially arranged in the base layer and close to the first semiconductor layer, and the light concentrating elements are used to concentrate the light incident on the light concentrating elements and transmit the light out of the light concentrating elements.

8. The light emitting device according to any one of claims 1 to 7, characterized in that: The light emitting layer comprises a first connection surface and a second connection surface, the first connection surface is a surface where the light emitting layer is connected to the first semiconductor layer, and the second connection surface is a surface where the light emitting layer is connected to the second semiconductor layer; The first connection surface is configured as an uneven surface; and / or the second connection surface is configured as an uneven surface.

9. A display panel, characterized in that: The invention comprises a driving substrate and a plurality of light emitting devices according to any one of claims 1 to 8, wherein the plurality of light emitting devices are arranged on one side of the driving substrate and are electrically connected to the driving substrate.

10. A display device, characterized in that: It comprises a housing and the display panel as claimed in claim 9, wherein the display panel is arranged in the housing, and a light emitting side of the display panel is exposed from the housing.

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