Surface processing technology for diode

Abstract

The invention relates to the technical field of diodes, in particular to a surface processing technology for diodes, which comprises the following steps: pretreating a plurality of diodes to form a to-be-polished group, and dynamically adjusting the polishing down force by detecting the surface roughness; the polished diode group is cleaned through plasma, the surface cleanliness is evaluated in combination with optical irradiation, the surface roughness of the cleaned diode group is detected for the second time, and batches meeting the passivation standard are screened; when passivation treatment is carried out, the crack area and the crack width of a passivation layer are monitored synchronously, and the passivation plasma power is adjusted according to the actual crack evaluation value. According to the process, closed-loop regulation and control are carried out, wherein pressure control of the surface state is dynamically matched in the polishing stage, and the synergistic effect of the cleaning plasma power and the inter-electrode distance is optimized in the cleaning stage; according to the invention, the cleanliness of the diode to be passivated is ensured by adjusting the polishing down pressure, the power of the cleaning plasma and the cleaning interval, and the thickness of the passivation layer is ensured to meet the passivation requirement by adjusting the power of the passivation plasma.

Description

Technical Field

[0001] The present invention relates to the technical field of diodes, and particularly to a surface processing technology for diodes. Background Art

[0002] A diode is an electronic device made of semiconductor materials (such as silicon, selenium, germanium, etc.). It has unidirectional conductivity, that is, when a forward voltage is applied to the anode and cathode of the diode, the diode conducts. When a reverse voltage is applied to the anode and cathode, the diode is cut off. Therefore, the conduction and cut-off of the diode are equivalent to the on and off of a switch. Currently, when processing the passivation layer on the surface of a diode, it is easy to have problems such as over-corrosion or insufficient formation of the passivation layer due to improper setting of process parameters during processing; deviation in the control of the concentration, temperature, or time of the passivation solution, resulting in an overly thin or thick film layer; suboptimal etching gas ratio, leading to insufficient selectivity between the passivation layer and the substrate material; impurities in the passivation solution (such as excessive chloride ions) or uncleaned surface oxide layer, causing local corrosion; insufficient plasma resistance of the passivation layer material, resulting in microcracks during the etching process.

[0003] Chinese Patent Publication No.: CN116313784A discloses a diode processing method and a diode. The method includes: obtaining a base layer, which includes a stacked substrate layer, an epitaxial transition layer, and an epitaxial layer; forming a plurality of grooves on the formation surface of the epitaxial layer, where the formation surface of the epitaxial layer is the surface facing away from the epitaxial transition layer; forming an anode layer on the formation surface; forming a first metal layer on the anode layer, and forming a second metal layer on the surface of the substrate layer facing away from the epitaxial transition layer.

[0004] It can be seen that the prior art has the following problems: During the surface processing of a diode, due to the lack of ensuring the cleanliness of the diode to be passivated by adjusting the polishing down pressure, cleaning plasma power, and cleaning distance, and ensuring that the thickness of the passivation layer meets the passivation requirements by adjusting the passivation plasma power. Summary of the Invention

[0005] For this reason, the present invention provides a surface processing technology for diodes to overcome the problems in the prior art that due to the lack of ensuring the cleanliness of the diode to be passivated by adjusting the polishing down pressure, cleaning plasma power, and cleaning distance, and ensuring that the thickness of the passivation layer meets the passivation requirements by adjusting the passivation plasma power.

[0006] To achieve the above object, the present invention provides a surface processing technology for diodes, including the following steps,

[0007] Preprocess a number of diodes to obtain a group of diodes to be polished, detect the surface roughness of the preprocessed surface of the group of diodes to be polished, determine the primary polishing down pressure according to the preprocessed surface roughness, and detect the roughness of the polished diode group to obtain the first roughness;

[0008] The polished diode group is subjected to plasma cleaning to obtain a clean diode group, and the surface cleanliness of the clean diode group is detected by optical irradiation to determine whether the surface cleanliness meets the processing requirements;

[0009] The roughness of the diode group that meets the cleanliness requirements is detected to obtain a second roughness, and the relative adhesion is obtained based on the first roughness and the second roughness. Whether the diode to be passivated meets the passivation requirements is determined based on the comparison result between the relative adhesion and the standard adhesion;

[0010] The diode that meets the passivation requirements is passivated to obtain an actual passivation layer, and the crack morphology parameters of the actual passivation layer are detected to determine whether to adjust the passivation plasma power again;

[0011] Among them, the crack morphology parameters include crack width and crack area.

[0012] Further, the process of determining the primary polishing down pressure according to the pre-treatment surface roughness includes,

[0013] The pre-treatment surface roughness distribution of the diode group to be polished is detected, the average roughness value is calculated, the average roughness value is compared with the standard roughness value range, and the primary polishing down pressure is determined according to the comparison result and the initial polishing down pressure;

[0014] Among them, the standard roughness value range is determined according to the material of the diode.

[0015] Further, the process of determining the primary polishing down pressure according to the comparison result and the initial polishing down pressure includes,

[0016] For the case where the comparison result is that the average roughness value is within the standard roughness value range, the initial polishing down pressure is used as the primary polishing down pressure;

[0017] For the case where the comparison result is that the average roughness value is less than the minimum value of the standard roughness value range, the primary polishing down pressure is determined according to the difference between the minimum value of the standard roughness value range and the average roughness value and the initial polishing down pressure;

[0018] For the case where the comparison result is that the average roughness value is greater than the maximum value of the standard roughness value range, the primary polishing down pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value range and the initial polishing down pressure;

[0019] The initial polishing down pressure is determined according to the required polishing quality level.

[0020] Further, the process of detecting the surface cleanliness of the clean diode group by optical irradiation to determine whether the surface cleanliness meets the processing requirements includes,

[0021] Adjust the irradiation area of the optical irradiation instrument according to the area to be irradiated of the diode group, obtain the irradiation data of the irradiation area, generate an irradiation image according to the irradiation data, perform a primary partition on the irradiation image to obtain a number of primary partition irradiation images, select and analyze the actual shadow degree of any one of the primary partition irradiation images, and determine whether to perform secondary cleaning on the diode corresponding to the selected primary partition irradiation image according to the shadow degree comparison result between the actual shadow degree and the preset standard shadow degree;

[0022] Wherein, the actual shadow degree is the ratio of the area of the shadow region to the area of the primary partition irradiation image.

[0023] Further, when the actual shadow degree is greater than the standard shadow degree, determine whether secondary cleaning of the diode is required and determine the cleaning parameters for secondary cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, determine that secondary cleaning of the diode is not required;

[0024] Wherein, the cleaning parameters include the cleaning plasma power and the cleaning distance, and the cleaning distance refers to the distance between the cleaning device and the diode.

[0025] Further, the process of determining whether secondary cleaning of the diode is required and determining the cleaning parameters for secondary cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree includes,

[0026] For the case where the actual shadow degree difference is less than the first-class shadow degree difference, determine that secondary cleaning is not required;

[0027] For the case where the actual shadow degree difference is greater than or equal to the first-class shadow degree difference and less than the second-class shadow degree difference, determine to adjust the cleaning distance to perform secondary cleaning on the diode;

[0028] For the case where the actual shadow degree difference is greater than or equal to the second-class shadow degree difference, determine to adjust the cleaning plasma power to perform secondary cleaning on the diode. For the case where the cleaning plasma power is adjusted to the maximum cleaning plasma power, adjust the cleaning distance to make the surface cleanliness meet the processing requirements.

[0029] Further, the process of determining whether the passivated diode meets the passivation requirement based on the comparison result between the relative adhesion and the standard adhesion includes,

[0030] Compare the relative adhesion with the preset standard adhesion interval to obtain an adhesion comparison result, and determine whether to perform a passivation operation or whether to adjust the passivation plasma power according to the adhesion comparison result.

[0031] Further, the process of determining whether to perform a passivation operation or whether to adjust the passivation plasma power according to the adhesion comparison result includes:

[0032] For the case where the relative adhesion in the adhesion comparison result is within the standard adhesion range, perform a passivation operation on the diode group;

[0033] For the case where the relative adhesion in the adhesion comparison result is less than the minimum value of the standard adhesion range, increase the passivation plasma power according to the difference between the minimum value of the standard adhesion range and the relative adhesion;

[0034] For the case where the relative adhesion in the adhesion comparison result is greater than the maximum value of the standard adhesion range, decrease the passivation plasma power according to the difference between the maximum value of the standard adhesion range and the relative adhesion.

[0035] Further, the process of passivating the diodes that meet the passivation requirements to obtain the actual passivation layer includes:

[0036] Detect the crack area and crack width of the passivation layer of the diodes that meet the passivation requirements, determine the actual crack rating value according to the passivation layer crack area and the crack width, and judge whether to adjust the passivation plasma power again according to the actual crack rating value;

[0037] Among them, the actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

[0038] Further, the process of judging whether to adjust the passivation plasma power again according to the actual crack rating value includes:

[0039] For the case where the actual crack rating value is less than the maintenance crack rating value, there is no need to adjust the passivation plasma power again;

[0040] For the case where the actual crack rating value is greater than or equal to the repair crack rating value, adjust the passivation plasma power again according to the difference between the actual crack rating value and the repair crack rating value.

[0041] Compared with the prior art, the beneficial effects of the present invention are as follows. By detecting the corresponding parameters of the diode surface cleaning and passivation processes, the passivation layer of the diode can be effectively covered, increasing the service life and performance of the diode. By detecting the surface roughness of the pretreatment and determining the actual polishing down pressure accordingly, the polishing process can be more precisely controlled, reducing the cases of over-polishing or under-polishing and improving the processing quality of the diode surface. Using optical irradiation to detect the cleanliness and performing secondary cleaning according to the detection results can ensure that the cleanliness of the diode surface meets the processing requirements and reduce the pollution problems in subsequent processes. By detecting the surface roughness before passivation, only the diodes that meet the passivation requirements are passivated, thereby improving the quality of the passivation layer and the reliability of the diode. Adjusting the passivation temperature or plasma power according to the crack morphology parameters can optimize the process parameters in real time, reduce the generation of cracks in the passivation layer, and improve the integrity of the passivation layer. Through closed-loop control and parameter optimization, rework and scrap rates are reduced, and production efficiency and cost-effectiveness are improved. This process enables the production of diodes with high consistency through standardized processes and parameter adjustments, which is beneficial for large-scale production.

[0042] Further, by detecting the roughness values of the diode group to be polished, removing the abnormal areas and calculating the average roughness value of the remaining areas, the actual roughness value of the diode group to be polished can be estimated, eliminating the need to detect the roughness of each diode, increasing the processing efficiency of the diode surface. For the case where the comparison result shows that the average roughness value is within the standard roughness value range, using the initial polishing down pressure as the actual polishing down pressure can smooth the roughness of the diode surface without adjusting the initial polishing down pressure, saving time and increasing processing efficiency. For the case where the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value range, the reduced actual polishing down pressure is determined according to the initial polishing down pressure and the product of (1 minus the difference between the minimum value of the standard roughness value range and the average roughness value) divided by the minimum value of the standard roughness value range, which can ensure a certain roughness on the diode surface to provide adhesion for the next processing step and avoid the reduction of the adhesion of the passivation layer to the diode due to the overly smooth surface of the diode, resulting in its inability to meet long-term use requirements. For the case where the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value range, the increased actual polishing down pressure is determined according to the initial polishing down pressure and the product of (1 plus the difference between the average roughness value and the maximum value of the standard roughness value range) divided by the maximum value of the standard roughness value range, which can ensure that the diode surface is suitable for passivation operation, extend the service time of the diode, and avoid the presence of peak-valley structures on the rough surface of the diode due to too high a roughness value, resulting in problems with passivation materials (such as SiO 2 、Si 3 N 4)It cannot be evenly covered, and the sunken areas may not be covered. The exposed silicon or metal is vulnerable to environmental erosion (such as oxidation and ion contamination). The passivation layer at the peak is too thin, forming micropores, which reduces the insulation and moisture-proof performance.

[0043] Furthermore, the combination of high-resolution images and grayscale processing can accurately identify tiny contaminants and improve the detection sensitivity. The zonal analysis avoids overall misjudgment and only cleans the areas where the pollution exceeds the standard, reducing unnecessary processing. The irradiation area is adaptively adjusted, which is applicable to diode groups of different sizes and improves the detection flexibility. Using a laser scanner to irradiate the diode group to determine the actual shadow degree can more quickly and intuitively detect the diode group corresponding to the first-level zonal irradiation image with a non-standard shadow degree, making an effective detection for subsequent adjustment of the cleaning parameters, avoiding the formation of a conductive channel due to insufficient cleanliness on the surface of the diode group, which may cause leakage current and reduce the insulation performance of the diode. Setting the actual shadow degree as the ratio of the shadow area to the area of the first-level zonal irradiation image can analyze whether the corresponding diode group of each zonal irradiation image meets the cleaning requirements, thus detecting the diode group more comprehensively and meticulously and ensuring the processing quality of its surface.

[0044] Furthermore, when the actual shadow degree is greater than the standard shadow degree, it is determined whether the diode needs to be cleaned twice and the cleaning parameters for the second cleaning are determined according to the actual difference in shadow degree between the actual shadow degree and the standard shadow degree, which can dynamically adjust the cleaning intensity according to the pollution degree on the diode surface, avoiding over-cleaning that may damage the diode or insufficient cleaning that may affect the next passivation operation and reduce the performance of the diode. When the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be cleaned twice, which can ensure that the surface of the diode group is not cleaned when the pollution degree is low, reducing the cleaning time and improving the cleaning efficiency.

[0045] Furthermore, based on the comparison result of the actual difference in shading degree with the preset first-class shading degree difference and second-class shading degree difference, the surface cleanliness of the diode is optimized in more detail, realizing the dynamic hierarchical control of the cleaning strategy, and being able to quickly identify the degree of contamination. For the case where the actual difference in shading degree is less than the first-class shading degree difference, it is determined that no secondary cleaning is required. In this case, there is no need to clean the surface of the diode, saving cleaning time, improving cleaning efficiency, and avoiding over-treatment. For the case where the actual difference in shading degree is greater than or equal to the second-class shading degree difference, it is determined to adjust the cleaning plasma power to perform secondary cleaning on the diode. If the cleaning demand is still not met after the cleaning plasma power is adjusted to the maximum cleaning plasma power, the adjusted third cleaning distance is determined according to the difference between the actual shading degree after cleaning and the standard shading degree and the initial cleaning distance. Among them, the third cleaning distance is negatively correlated with the difference between the actual shading degree after cleaning and the standard shading degree. In this way, the cleaning distance can be adjusted according to the degree of contamination on the surface of the diode. The higher the degree of contamination, the shorter the cleaning distance, effectively removing the contaminants on the surface of the diode and ensuring the smooth progress of the passivation operation on the surface of the diode. For the case where the actual difference in shading degree is greater than or equal to the second-class shading degree difference, it is determined to adjust the cleaning plasma power to perform secondary cleaning on the diode. If the cleaning demand is still not met after the cleaning plasma power is adjusted to the maximum cleaning plasma power, the adjusted third cleaning distance is determined according to the difference between the actual shading degree after cleaning and the standard shading degree and the initial cleaning distance. Among them, the third cleaning distance is negatively correlated with the difference between the actual shading degree after cleaning and the standard shading degree. The negative correlation ratio between the third cleaning distance and the difference between the actual shading degree after cleaning and the standard shading degree is determined by the preset ratio influence compensation parameter. When there are too many contaminants on the surface of the diode, first adjust the cleaning power to observe whether the contaminants can be removed. If the contaminants cannot be removed, the adjusted third cleaning distance is determined according to the difference between the actual shading degree after cleaning and the standard shading degree and the initial cleaning distance, that is, shorten the cleaning distance to completely remove stubborn contamination.

[0046] Furthermore, by detecting the change in roughness before and after cleaning the diode surface (i.e., the difference between the first roughness and the second roughness), the relative adhesion is calculated and compared with the standard adhesion range, and the passivation plasma power is dynamically adjusted to ensure the quality of the passivation layer. The roughness difference reflects the residual amount of surface contaminants (the greater the degree of unevenness, the more contaminants), and the relative adhesion is positively correlated with the residual amount of contaminants (the more contaminants, the worse the adhesion). The adhesion is quantified by the roughness difference to optimize the processing process flow and improve the processing efficiency. The plasma power is automatically adjusted to improve the uniformity and reliability of the passivation layer. For the case where the relative adhesion in the adhesion comparison result is less than the minimum value of the standard adhesion range, the increased passivation plasma power is determined according to the initial passivation plasma power and the product of 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion divided by the minimum value of the standard adhesion range. For the case where the relative adhesion in the adhesion comparison result is greater than the maximum value of the standard adhesion range, the decreased passivation plasma power is determined according to the initial passivation plasma power and the product of 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion divided by the maximum value of the standard adhesion range, which can prevent failures caused by insufficient adhesion (easy to peel off) or excessive adhesion (stress cracks).

[0047] Furthermore, the crack area and crack width of the passivation layer of the diode that meets the passivation requirements are detected, the actual crack rating value is determined according to the passivation layer crack area and the crack width, and it is judged whether to adjust the passivation plasma power again according to the actual crack rating value. The actual crack rating value includes a maintenance crack rating value and a repair crack rating value. Subjective judgment can be avoided through the actual crack rating value to ensure the reliability of the passivation layer. For the case where the actual crack rating value is greater than or equal to the repair crack rating value, the passivation plasma power is increased according to the difference between the actual crack rating value and the repair crack rating value. The maximum crack area and the maximum crack width are set. When both the crack area and the crack width are greater than the corresponding thresholds, the diode is determined to be a defective product, which can make the power adjustment proportional to the severity of the crack and avoid over-treatment or under-treatment. Fixed power may lead to incomplete repair or material damage; defective products are promptly removed to reduce the cost of ineffective repair. Description of the Drawings

[0048] Figure 1 is the process flow chart of the surface processing technology for the diode in this embodiment;

[0049] Figure 2 is the process flow chart of the pre-treatment process for several diodes in the surface processing technology for the diode in this embodiment;

[0050] Figure 3 is the process flow chart of the process for adjusting the polishing down pressure in the surface processing technology for the diode in this embodiment;

[0051] Figure 4 This is a process flow chart for adjusting the passivation plasma power in the surface processing technology for diodes in this embodiment. Specific implementation manners

[0052] In order to make the objectives and advantages of the present invention more clear and understandable, the present invention will be further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0053] The preferred implementation manners of the present invention will be described below with reference to the accompanying drawings. Those skilled in the art should understand that these implementation manners are only used to explain the technical principles of the present invention and do not limit the protection scope of the present invention.

[0054] It should be noted that in the description of the present invention, the terms indicating directions or positional relationships such as "upper", "lower", "left", "right", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings. This is only for convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0055] In addition, it should also be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0056] Please refer to Figures 1 - 4 as shown in Figure 1 This is the process flow chart of the surface processing technology for diodes in this embodiment; Figure 2 This is the process flow chart of the pretreatment process for several diodes in the surface processing technology for diodes in this embodiment; Figure 3 This is the process flow chart of adjusting the polishing down pressure in the surface processing technology for diodes in this embodiment; Figure 4 This is the process flow chart of adjusting the passivation plasma power in the surface processing technology for diodes in this embodiment.

[0057] This embodiment provides a surface processing technology for diodes, including the following steps,

[0058] Step S1, preprocess a number of diodes to obtain a group of diodes to be polished, detect the surface roughness of the preprocessed group of diodes to be polished, determine the primary polishing downward pressure according to the preprocessed surface roughness, and detect the roughness of the polished group of diodes to obtain the first roughness;

[0059] Step S2, perform plasma cleaning on the polished group of diodes to obtain a group of clean diodes, and use optical irradiation to detect the surface cleanliness of the group of clean diodes to determine whether the surface cleanliness meets the processing requirements;

[0060] Step S3, detect the roughness of the group of diodes that meet the cleanliness requirements to obtain the second roughness, obtain the relative adhesion force according to the first roughness and the second roughness, and determine whether the diodes to be passivated meet the passivation requirements based on the comparison result between the relative adhesion force and the standard adhesion force;

[0061] Step S4, perform passivation treatment on the diodes that meet the passivation requirements to obtain an actual passivation layer, and detect the crack morphology parameters of the actual passivation layer to determine whether to adjust the passivation plasma power again;

[0062] Among them, the crack morphology parameters include crack width and crack area.

[0063] In step S1, this embodiment provides a step for preprocessing a number of diodes, including,

[0064] Step S11, classify the acquired or produced diodes, distinguish them according to materials, specifications, batches, etc., and select the diodes with intact appearance and no obvious defects as the objects to be processed;

[0065] Step S12, use deionized water or a special cleaning agent to perform a preliminary cleaning on the diodes to remove impurities such as dust and oil on the surface. After cleaning, dry the diodes with nitrogen or dry air to ensure that the surface is dry and residue-free;

[0066] Step S13, perform an appearance inspection on the cleaned diodes, record any visible defects or damages, and mark the qualified diodes for subsequent tracking and processing;

[0067] Step S14, perform slight grinding or sandpaper polishing on the diode surface to remove the tiny protrusions and unevenness on the surface. According to the material and specifications of the diodes, select appropriate polishing tools and polishing fluids, and adjust the parameters of the polishing equipment, such as rotation speed and polishing time, to meet the requirements of different diodes, and detect the roughness of the polished group of diodes to obtain the first roughness.

[0068] By detecting the corresponding parameters of the diode surface cleaning and passivation processes, the passivation layer of the diode can be effectively covered, increasing the service life and performance of the diode. By detecting the surface roughness of the pre-treatment and determining the actual polishing down-pressure accordingly, the polishing process can be more precisely controlled, reducing over-polishing or under-polishing, and improving the processing quality of the diode surface. The cleanliness is detected by optical irradiation, and secondary cleaning is performed according to the detection results to ensure that the cleanliness of the diode surface meets the processing requirements and reduce pollution problems in subsequent processes. By detecting the surface roughness before passivation, only diodes that meet the passivation requirements are passivated, thereby improving the quality of the passivation layer and the reliability of the diode. By adjusting the passivation temperature or plasma power according to the crack morphology parameters, the process parameters can be optimized in real time, reducing the generation of cracks in the passivation layer and improving the integrity of the passivation layer. Through closed-loop control and parameter optimization, rework and scrap rates are reduced, and production efficiency and cost-effectiveness are improved. This process enables the production of diodes with high consistency through standardized processes and parameter adjustments, which is beneficial for mass production.

[0069] Specifically, the process of determining the first polishing down-pressure according to the pre-treatment surface roughness includes,

[0070] Detecting the pre-treatment surface roughness distribution of the diode group to be polished, calculating the average roughness value, comparing the average roughness value with the standard roughness value range, and determining the first polishing down-pressure according to the comparison result and the initial polishing down-pressure;

[0071] Among them, the standard roughness value range is determined according to the material of the diode.

[0072] Specifically, the process of determining the first polishing down-pressure according to the comparison result and the initial polishing down-pressure includes,

[0073] For the case where the comparison result is that the average roughness value is within the standard roughness value range, the initial polishing down-pressure is used as the first polishing down-pressure;

[0074] For the case where the comparison result is that the average roughness value is less than the minimum value of the standard roughness value range, the first polishing down-pressure is determined according to the difference between the minimum value of the standard roughness value range and the average roughness value and the initial polishing down-pressure;

[0075] For the case where the comparison result is that the average roughness value is greater than the maximum value of the standard roughness value range, the first polishing down-pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value range and the initial polishing down-pressure;

[0076] The initial polishing down-pressure is determined according to the required polishing quality level.

[0077] In this embodiment, a roughness detector (such as a contact type or an optical type) is used to scan the surface of the diode group to be polished, generate a distribution map of surface roughness, identify local abnormal areas (such as scratches, protrusions), clear the abnormal areas in the distribution map, and calculate the average roughness value of the remaining areas.

[0078] Obtain roughness data at multiple points (such as parameters like Ra, Rz, etc.).

[0079] Take the arithmetic mean of the roughness values of all detection points (such as the average Ra value) to represent the overall surface condition. According to the diode material (such as silicon, metal pins, glass encapsulation), preset the allowable roughness value range (for example: for silicon wafers, Ra is 0.2 - 0.4 μm; for metal, Ra is 0.5 - 1.0 μm).

[0080] For the case where the comparison result shows that the average roughness value is within the standard roughness value range, use the initial polishing down - pressure as the first - stage polishing down - pressure.

[0081] For the case where the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value range, determine the reduced first - stage polishing down - pressure according to the initial polishing down - pressure and the product of (1 minus the ratio of the difference between the minimum value of the standard roughness value range and the average roughness value to the minimum value of the standard roughness value range).

[0082] For the case where the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value range, determine the increased first - stage polishing down - pressure according to the initial polishing down - pressure and the product of (1 plus the ratio of the difference between the average roughness value and the maximum value of the standard roughness value range to the maximum value of the standard roughness value range).

[0083] Determine the initial polishing down - pressure according to the polishing quality grade. In this embodiment, the polishing quality grade can be divided into high - precision polishing quality grade (fine polishing), medium - precision polishing quality grade (standard polishing), and low - precision polishing quality grade (rough polishing). Different grades correspond to different initial down - pressures.

[0084] For example,

[0085] The high - precision polishing quality grade corresponds to an initial down - pressure of 40 N.

[0086] The medium - precision polishing quality grade corresponds to an initial down - pressure of 60 N.

[0087] The low - precision polishing quality grade corresponds to an initial down - pressure of 100 N.

[0088] In this embodiment, taking the high - precision polishing quality grade as an example to adjust the corresponding initial down - pressure, this is an example for silicon diodes that require high - precision polishing.

[0089] Set the standard roughness value range as [0.2 μm, 0.4 μm].

[0090] If the detected actual roughness is 0.3, there is no need to adjust the down pressure for the first polishing;

[0091] If the detected actual roughness is 0.15, the reduced down pressure for the first polishing is determined to be 40×[1-(0.2 - 0.15) / 0.2] = 30 N according to the initial down pressure for polishing and the product of (1 minus the difference between the minimum value of the standard roughness value range and the average roughness value) divided by the minimum value of the standard roughness value range;

[0092] If the detected actual roughness is 0.5, the increased down pressure for the first polishing is determined to be 40×[1+(0.5 - 0.4) / 0.5] = 48 N according to the initial down pressure for polishing and the product of (1 plus the difference between the average roughness value and the maximum value of the standard roughness value range) divided by the maximum value of the standard roughness value range.

[0093] Detecting the roughness value of the diode group to be polished, clearing the abnormal area and calculating the average roughness value of the remaining area can estimate the actual roughness value of the diode group to be polished. There is no need to detect the roughness of each diode, which increases the processing efficiency of the diode surface. For the case where the comparison result is that the average roughness value is within the standard roughness value range, using the initial down pressure for polishing as the down pressure for the first polishing can polish the roughness of the diode surface without adjusting the initial down pressure, saving time and increasing the processing efficiency. For the case where the comparison result is that the average roughness value is less than the minimum value of the standard roughness value range, determining the reduced down pressure for the first polishing according to the initial down pressure for polishing and the product of (1 minus the difference between the minimum value of the standard roughness value range and the average roughness value) divided by the minimum value of the standard roughness value range can ensure a certain roughness on the diode surface to provide adhesion for the next processing step, avoiding the reduction of the adhesion of the passivation layer to the diode due to the overly smooth surface of the diode, resulting in its inability to meet the long-term use requirements during use; for the case where the comparison result is that the average roughness value is greater than the maximum value of the standard roughness value range, determining the increased down pressure for the first polishing according to the initial down pressure for polishing and the product of (1 plus the difference between the average roughness value and the maximum value of the standard roughness value range) divided by the maximum value of the standard roughness value range can ensure that the diode surface is suitable for passivation operation, extend the service life of the diode, and avoid the formation of peak-valley structures on the rough surface of the diode due to too high roughness value, resulting in the inability of the passivation material (such as SiO 2 、Si 3 N 4 ) to cover evenly, the sunken area may not be covered, and the exposed silicon or metal is vulnerable to environmental erosion (such as oxidation, ion contamination), and the passivation layer at the peak is too thin, forming micropores, reducing the insulation and moisture-proof performance.

[0094] Specifically, the process of detecting the surface cleanliness of the cleaning diode group by optical irradiation to determine whether the surface cleanliness meets the processing requirements includes,

[0095] Adjust the irradiation area of the optical irradiation instrument according to the area to be irradiated of the diode group, obtain the irradiation data of the irradiation area, generate an irradiation image according to the irradiation data, perform a first-level partition on the irradiation image to obtain several first-level partition irradiation images, select and analyze the actual shadow degree of any first-level partition irradiation image, and determine whether to perform secondary cleaning on the diode corresponding to the selected first-level partition irradiation image according to the shadow degree comparison result between the actual shadow degree and the preset standard shadow degree;

[0096] Among them, the actual shadow degree is the ratio of the area of the shadow region to the area of the first-level partition irradiation image.

[0097] Specifically, when the actual shadow degree is greater than the standard shadow degree, determine whether secondary cleaning of the diode is required and determine the cleaning parameters for secondary cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, determine that secondary cleaning of the diode is not required;

[0098] Among them, the cleaning parameters include the cleaning plasma power and the cleaning distance, and the cleaning distance refers to the distance between the cleaning device and the diode.

[0099] Specifically, the process of determining whether secondary cleaning of the diode is required and determining the cleaning parameters for secondary cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree includes,

[0100] For the case where the actual shadow degree difference is less than the first-class shadow degree difference, determine that secondary cleaning is not required;

[0101] For the case where the actual shadow degree difference is greater than or equal to the first-class shadow degree difference and less than the second-class shadow degree difference, determine to adjust the cleaning distance to perform secondary cleaning on the diode;

[0102] For the case where the actual shadow degree difference is greater than or equal to the second-class shadow degree difference, determine to adjust the cleaning plasma power to perform secondary cleaning on the diode. For the case where the cleaning plasma power is adjusted to the maximum cleaning plasma power, adjust the cleaning distance to make the surface cleanliness meet the processing requirements.

[0103] Adjust the irradiation area of the optical irradiation instrument (such as a laser scanner) according to the size of the diode group. Among them, the irradiation area of the optical irradiation instrument needs to be greater than or equal to the area to be irradiated of the diode group to ensure full coverage, obtain a high-resolution irradiation image (such as 5000×5000 pixels), and perform grayscale processing to enhance the shadow contrast.

[0104] Divide the irradiated image into multiple first-level partitions (such as a 5×5 grid), and calculate the actual shadow degree of the irradiated image for each first-level partition. Here, the actual shadow degree is the ratio of the shadow area to the area of the irradiated image of the first-level partition.

[0105] If the actual shadow degree is greater than the standard shadow degree, determine whether the diode needs secondary cleaning and determine the cleaning parameters for secondary cleaning according to the actual difference in shadow degree between the actual shadow degree and the standard shadow degree.

[0106] For the case where the actual difference in shadow degree is less than the first-class difference in shadow degree, it is determined that secondary cleaning is not required.

[0107] For the case where the actual difference in shadow degree is greater than or equal to the first-class difference in shadow degree and less than the second-class difference in shadow degree, determine the secondary cleaning distance after adjusting the initial cleaning distance according to the initial cleaning distance and the difference between the second-class difference in shadow degree and the actual difference in shadow degree. Here, the secondary cleaning distance is negatively correlated with the difference between the second-class difference in shadow degree and the actual difference in shadow degree, and the negative correlation ratio between the secondary cleaning distance and the difference between the second-class difference in shadow degree and the actual difference in shadow degree is determined by a preset ratio influence compensation parameter.

[0108] Among them, the initial cleaning distance is determined according to the historical data of the cleaning distance.

[0109] For the case where the actual difference in shadow degree is greater than or equal to the second-class difference in shadow degree, determine to adjust the cleaning plasma power to perform secondary cleaning on the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, determine the adjusted tertiary cleaning distance according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning distance. Here, the tertiary cleaning distance is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree, and the negative correlation ratio between the tertiary cleaning distance and the difference between the actual shadow degree after cleaning and the standard shadow degree is determined by a preset ratio influence compensation parameter.

[0110] In this embodiment, the standard shadow degree is set to 10%, the first-class difference in shadow degree is 5%, the second-class difference in shadow degree is 8%, and the initial cleaning distance is 2 mm.

[0111] When the actual shadow degree is 9%, it is determined that the diode does not need secondary cleaning.

[0112] When the actual shadow degree is 12%, determine whether the diode needs secondary cleaning and determine the cleaning parameters for secondary cleaning according to the actual difference in shadow degree between the actual shadow degree and the standard shadow degree. The actual difference in shadow degree is 2%, which is less than the first-class difference in shadow degree of 5%, so it is determined that secondary cleaning is not required.

[0113] When the actual shadow degree is 16%, the secondary cleaning distance after adjusting the initial cleaning distance is determined according to the difference between the initial cleaning distance and the difference between the second-class shadow degree difference and the actual shadow degree difference. The actual shadow degree difference is 6%, which is greater than or equal to the first-class shadow degree difference and less than the second-class shadow degree difference. The negative correlation ratio influence compensation parameter between the secondary cleaning distance and the difference between the second-class shadow degree difference and the actual shadow degree difference is set to 0.15. The adjusted secondary cleaning distance is 2 - 0.15×(8 - 6) = 1.7mm;

[0114] When the actual shadow degree is 20%, the cleaning plasma power is adjusted to perform secondary cleaning on the diode. If the cleaning requirement is still not met after the cleaning plasma power is adjusted to the maximum cleaning plasma power (such as adjusting the power from 200W to 300W), the adjusted tertiary cleaning distance is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning distance. Among them, the negative correlation ratio influence compensation parameter between the tertiary cleaning distance and the difference between the actual shadow degree after cleaning and the standard shadow degree is set to 0.12;

[0115] At this time, it is detected that the actual shadow degree after cleaning is 18%, then the tertiary cleaning distance is 2 - 0.12×(18 - 10) = 1.04mm.

[0116] Set the maximum number of cleaning times. If the cleaning requirement still cannot be met after 3 cleaning times, the diode corresponding to the irradiated image of the first-level partition is alarmed and its surface is reprocessed. Among them, the corresponding correlation ratio influence compensation parameter can be optimized according to the cleaning result of each time to perform more refined cleaning on the diode.

[0117] Combined with grayscale processing, high-resolution images can accurately identify tiny pollutants and improve detection sensitivity. Zonal analysis avoids overall misjudgment and only cleans the areas where the pollution exceeds the standard, reducing unnecessary processing. The irradiation area is adjusted adaptively, which is applicable to diode groups of different sizes and improves detection flexibility. Using a laser scanner to irradiate the diode group to determine the actual shadow degree can more quickly and intuitively detect the diode group corresponding to the first-level partition irradiated image that does not meet the standard shadow degree, making an effective detection for subsequent adjustment of cleaning parameters, avoiding the formation of a conductive channel due to insufficient cleanliness on the surface of the diode group, causing leakage current and reducing the insulation performance of the diode. Setting the actual shadow degree as the ratio of the shadow area to the area of the first-level partition irradiated image can analyze whether the diode group corresponding to each partition irradiated image meets the cleaning requirement, thus detecting the diode group more comprehensively and meticulously and ensuring the processing quality of its surface.

[0118] When the actual shadow degree is greater than the standard shadow degree, it is determined whether the diode needs to be secondarily cleaned and the cleaning parameters for the secondary cleaning are determined according to the actual difference in shadow degree between the actual shadow degree and the standard shadow degree. The cleaning intensity can be dynamically adjusted according to the pollution degree on the diode surface, avoiding over-cleaning damage to the diode or insufficient cleaning affecting the next passivation operation and resulting in a reduction in the service performance of the diode. When the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be secondarily cleaned, which can ensure that when the pollution degree is low, the surface of the diode group is not cleaned, reducing the cleaning time and improving the cleaning efficiency.

[0119] Based on the comparison result of the actual difference in shadow degree with a preset first-class difference in shadow degree and a second-class difference in shadow degree, the surface cleanliness of the diode is optimized in more detail, realizing dynamic hierarchical control of the cleaning strategy. The pollution degree can be quickly identified. For the case where the actual difference in shadow degree is less than the first-class difference in shadow degree, it is determined that secondary cleaning is not required, and in this case, the surface of the diode does not need to be cleaned, saving cleaning time and improving cleaning efficiency, and avoiding over-treatment. For the case where the actual difference in shadow degree is greater than or equal to the second-class difference in shadow degree, it is determined to adjust the cleaning plasma power to secondarily clean the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted third cleaning distance is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning distance. Among them, the third cleaning distance is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree. In this way, the cleaning distance can be adjusted according to the pollution degree on the diode surface. The higher the pollution degree, the shorter the cleaning distance, effectively removing the pollutants on the diode surface and ensuring the smooth progress of the passivation operation on the diode surface. For the case where the actual difference in shadow degree is greater than or equal to the second-class difference in shadow degree, it is determined to adjust the cleaning plasma power to secondarily clean the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted third cleaning distance is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning distance. Among them, the third cleaning distance is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree. The negative correlation ratio between the third cleaning distance and the difference between the actual shadow degree after cleaning and the standard shadow degree is determined by a preset proportional influence compensation parameter. When there are too many pollutants on the diode surface, first adjust the cleaning power to observe whether the pollutants can be removed. If the pollutants cannot be removed, the adjusted third cleaning distance is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning distance, that is, shorten the cleaning distance to completely remove the stubborn pollution.

[0120] Specifically, the process of determining whether the passivated diode meets the passivation requirements based on the comparison result of the relative adhesion force and the standard adhesion force includes

[0121] Compare the relative adhesion with a preset standard adhesion range to obtain an adhesion comparison result, and determine whether to perform a passivation operation or whether to adjust the passivation plasma power according to the adhesion comparison result.

[0122] Specifically, the process of determining whether to perform a passivation operation or whether to adjust the passivation plasma power according to the adhesion comparison result includes

[0123] For the case where the adhesion comparison result is that the relative adhesion is within the standard adhesion range, perform a passivation operation on the diode group;

[0124] For the case where the adhesion comparison result is that the relative adhesion is less than the minimum value of the standard adhesion range, increase the passivation plasma power according to the difference between the minimum value of the standard adhesion range and the relative adhesion.

[0125] For the case where the adhesion comparison result is that the relative adhesion is greater than the maximum value of the standard adhesion range, decrease the passivation plasma power according to the difference between the maximum value of the standard adhesion range and the relative adhesion.

[0126] Determine the relative adhesion according to the difference between the first roughness and the second roughness and the influence compensation parameter of the difference between the first roughness and the second roughness on the adhesion, where the relative adhesion is positively correlated with the difference between the first roughness and the second roughness, and the positive correlation ratio between the relative adhesion and the difference between the first roughness and the second roughness is determined by a preset ratio influence compensation parameter; since the difference between the first roughness and the second roughness of the diode surface before and after cleaning can reflect the degree of surface unevenness, if the surface unevenness of the diode is large, the number of pollutants on the diode surface is large, so the difference between the first roughness and the second roughness can reflect the adhesion of the diode surface.

[0127] In this embodiment, the detected first roughness is 1.2 μm, the second roughness is 0.8 μm, and the positive correlation ratio between the relative adhesion and the difference between the first roughness and the second roughness is set to 100, then the relative adhesion is 100×(1.2 - 0.8) = 40 N.

[0128] For the case where the adhesion comparison result is that the relative adhesion is within the standard adhesion range, perform a passivation operation on the diode group;

[0129] For the case where the adhesion comparison result is that the relative adhesion is less than the minimum value of the standard adhesion range, determine the increased passivation plasma power according to the initial passivation plasma power and the product of 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion divided by the minimum value of the standard adhesion range.

[0130] For the case where the relative adhesion in the adhesion comparison result is greater than the maximum value of the standard adhesion range, determine the reduced passivation plasma power based on the initial passivation plasma power and the product of 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion divided by the maximum value of the standard adhesion range;

[0131] Among them, the initial passivation plasma power is determined according to historical experimental data;

[0132] In this embodiment, the initial passivation plasma power is set to 100W, and the standard adhesion range is set to [50, 70],

[0133] When the detected relative adhesion is 40N, the increased passivation plasma power is 100×[1+(50 - 40) / 50] = 120N,

[0134] When the detected relative adhesion is 85N, the reduced passivation plasma power is 100×[1-(85 - 70) / 70] = 78.57N.

[0135] By detecting the change in roughness (i.e., the difference between the first roughness and the second roughness) before and after cleaning the surface of the diode, calculate the relative adhesion, and compare it with the standard adhesion range to dynamically adjust the passivation plasma power to ensure the quality of the passivation layer. The roughness difference reflects the residual amount of surface contaminants (the greater the unevenness, the more contaminants), and the relative adhesion is positively correlated with the residual amount of contaminants (the more contaminants, the worse the adhesion). Quantify the adhesion through the roughness difference, optimize the processing process flow, and improve the processing efficiency. Automatically adjust the plasma power to improve the uniformity and reliability of the passivation layer. For the case where the relative adhesion in the adhesion comparison result is less than the minimum value of the standard adhesion range, determine the increased passivation plasma power based on the initial passivation plasma power and the product of 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion divided by the minimum value of the standard adhesion range. For the case where the relative adhesion in the adhesion comparison result is greater than the maximum value of the standard adhesion range, determine the reduced passivation plasma power based on the initial passivation plasma power and the product of 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion divided by the maximum value of the standard adhesion range, which can prevent failures caused by insufficient adhesion (easy to peel off) or excessive adhesion (stress cracks).

[0136] Specifically, the process of passivating a diode that meets the passivation requirements to obtain an actual passivation layer includes,

[0137] Detect the crack area and crack width of the passivation layer of the diode that meets the passivation requirements, determine the actual crack rating value according to the passivation layer crack area and the crack width, and judge whether to adjust the passivation plasma power again according to the actual crack rating value;

[0138] Among them, the actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

[0139] Specifically, the process of judging whether to adjust the passivation plasma power again according to the actual crack rating value includes

[0140] For the case where the actual crack rating value is less than the maintenance crack rating value, there is no need to adjust the passivation plasma power again;

[0141] For the case where the actual crack rating value is greater than or equal to the repair crack rating value, the passivation plasma power is adjusted again according to the difference between the actual crack rating value and the repair crack rating value.

[0142] Determine the actual crack rating value according to the sum of the crack area, the influence compensation parameter of the crack area on the actual crack rating value, and the influence compensation parameter of the crack width on the actual crack rating value.

[0143] For the case where the actual crack rating value is less than the maintenance crack rating value, there is no need to adjust the passivation plasma power again;

[0144] For the case where the actual crack rating value is greater than or equal to the repair crack rating value, increase the passivation plasma power according to the difference between the actual crack rating value and the repair crack rating value. Set the maximum crack area and the maximum crack width. When both the crack area and the crack width are greater than the corresponding thresholds, determine that the diode is defective.

[0145] In this embodiment, an optical microscope or a scanning electron microscope is used to obtain the crack area and the crack width.

[0146] Set the influence compensation parameter of the crack area on the actual crack rating value to 0.1; the influence compensation parameter of the crack width on the actual crack rating value to 0.5; the maintenance crack rating value to 10.

[0147] Detect the crack area of 50 μm 2 , the crack width is 2 μm, and the actual crack rating value is 0.1×50 + 0.5×2 = 5 + 1 = 6. There is no need to adjust the passivation plasma power again;

[0148] Detect the crack area of 200 μm 2 , the crack width is 10 μm, and the actual crack rating value is 0.1×200 + 0.5×10 = 20 + 5 = 25. Determine the increased passivation plasma power according to the difference between the actual crack rating value and the repair crack rating value and the influence compensation parameter of the difference between the actual crack rating value and the repair crack rating value on the passivation plasma power.

[0149] Set the influence compensation parameter of the difference between the repair crack rating values on the passivation plasma power to 10, and the increased passivation plasma power is 10×(25 - 10) = 150.

[0150] Detect the crack area and crack width of the passivation layer of a diode that meets the passivation requirements, determine the actual crack rating value based on the passivation layer crack area and the crack width, and judge whether to adjust the passivation plasma power again according to the actual crack rating value. The actual crack rating value includes a maintenance crack rating value and a repair crack rating value. By using the actual crack rating value, subjective judgment can be avoided, and the reliability of the passivation layer can be ensured. For the case where the actual crack rating value is greater than or equal to the repair crack rating value, increase the passivation plasma power according to the difference between the actual crack rating value and the repair crack rating value. Set the maximum crack area and the maximum crack width. When both the crack area and the crack width are greater than the corresponding thresholds, determine that the diode is a defective product. The power adjustment can be set to be proportional to the severity of the crack, avoiding over-treatment or under-treatment. Fixed power may lead to incomplete repair or material damage; defective products are promptly removed to reduce the cost of ineffective repair.

[0151] So far, the technical solution of the present invention has been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

[0152] The above are only the preferred embodiments of the present invention and are not used to limit the present invention; for those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A surface processing technology for a diode, characterized in that: The following steps are included: Pre-processing a plurality of diodes to obtain a diode group to be polished, detecting the roughness of a pre-processed surface of the diode group to be polished, determining a first polishing pressure according to the pre-processed surface roughness, and detecting the roughness of the diode group after polishing to obtain a first roughness; Plasma cleaning the polished diode group to obtain a clean diode group, and detecting the surface cleanliness of the clean diode group by optical irradiation to determine whether the surface cleanliness meets the processing requirements; Detecting the roughness of the diode group that meets the cleanliness requirement to obtain a second roughness, obtaining a relative adhesion according to the first roughness and the second roughness, and determining whether the diode to be passivated meets the passivation requirement based on a comparison result between the relative adhesion and the standard adhesion; Performing passivation treatment on the diodes that meet the passivation requirements to obtain an actual passivation layer, and detecting crack morphology parameters of the actual passivation layer to determine whether to adjust the passivation plasma power again; Wherein, the crack morphology parameters include crack width and crack area.

2. The surface processing technology for diodes according to claim 1, characterized in that: The process of determining the pressure of a polishing according to the roughness of the pre-treated surface comprises: Detecting the roughness distribution of the pre-treated surface of the diode group to be polished, calculating the average roughness value, comparing the average roughness value with the standard roughness value interval, and determining a polishing pressure according to the comparison result and the initial polishing pressure; The standard roughness value range is determined according to the material of the diode.

3. The surface processing technology for diodes according to claim 2, characterized in that: The process of determining a polishing pressure according to the comparison result and the initial polishing pressure comprises: For the case where the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the first polishing pressure; If the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the minimum value of the standard roughness value interval and the average roughness value and the initial polishing pressure; If the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value interval and the initial polishing pressure; The initial polishing down force is determined according to the required polishing quality level.

4. The surface processing technology for diodes according to claim 3, characterized in that: The process of using optical illumination to detect the surface cleanliness of the cleaning diode group to determine whether the surface cleanliness meets the processing requirements includes: Adjusting the irradiation area of ​​the optical irradiation instrument according to the area to be irradiated of the diode group, acquiring irradiation data of the irradiation area, generating an irradiation image according to the irradiation data, performing primary partitioning on the irradiation image to obtain a plurality of primary partitioned irradiation images, selecting and analyzing the actual shadow degree of any primary partitioned irradiation image, and determining whether to perform secondary cleaning on the diode corresponding to the selected primary partitioned irradiation image according to a shadow degree comparison result of the actual shadow degree and a preset standard shadow degree; The actual shadow degree is the ratio of the shadow area to the area of ​​the first-level partition illumination image.

5. The surface processing technology for diodes according to claim 4, characterized in that: When the actual shadow degree is greater than the standard shadow degree, judging whether the diode needs to be cleaned for a second time and determining the cleaning parameters of the second cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, judging that the diode does not need to be cleaned for a second time; The cleaning parameters include cleaning plasma power and cleaning distance, and the cleaning distance refers to the distance between the cleaning device and the diode.

6. The surface processing technology for diodes according to claim 5, characterized in that: The process of determining whether the diode needs to be cleaned for a second time according to the actual difference between the actual shadow level and the standard shadow level and determining the cleaning parameters for the second time cleaning includes: In the case where the actual shadow difference is less than the first-order shadow difference, it is determined that secondary cleaning is not required; In the case where the actual shadow difference is greater than or equal to the first-order shadow difference and less than the second-order shadow difference, it is determined to adjust the cleaning distance to perform secondary cleaning on the diode; When the actual shadow difference is greater than or equal to the second shadow difference, it is determined to adjust the cleaning plasma power to perform secondary cleaning on the diode. When the cleaning plasma power is adjusted to the maximum cleaning plasma power, the cleaning distance is adjusted so that the surface cleanliness meets the processing requirements.

7. The surface processing technology for diodes according to claim 6, characterized in that: The process of determining whether the passivated diode meets the passivation requirement based on the comparison result between the relative adhesion and the standard adhesion includes: The relative adhesion is compared with a preset standard adhesion range to obtain an adhesion comparison result, and it is determined whether to perform a passivation operation or adjust the passivation plasma power according to the adhesion comparison result.

8. The surface processing technology for diodes according to claim 7, characterized in that: The process of determining whether to perform a passivation operation or adjust the passivation plasma power according to the adhesion comparison result includes: For the case where the adhesion comparison result shows that the relative adhesion is within the standard adhesion range, the diode group is passivated; When the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion interval, the passivation plasma power is increased according to the difference between the minimum value of the standard adhesion interval and the relative adhesion; When the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion interval, the passivation plasma power is reduced according to the difference between the maximum value of the standard adhesion interval and the relative adhesion.

9. The surface processing technology for diodes according to claim 8, characterized in that: The process of passivating the diode that meets the passivation requirements and obtaining the actual passivation layer includes: Detecting the crack area and crack width of the passivation layer of the diode that meets the passivation requirement, determining an actual crack rating value according to the crack area and crack width of the passivation layer, and judging whether to adjust the passivation plasma power again according to the actual crack rating value; The actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

10. The surface processing technology for diodes according to claim 9, characterized in that: The process of judging whether to adjust the passivation plasma power again according to the actual crack rating value includes: In the case where the actual crack rating value is less than the maintained crack rating value, there is no need to adjust the passivation plasma power again; In the case where the actual crack rating value is greater than or equal to the repaired crack rating value, the passivation plasma power is adjusted again according to the difference between the actual crack rating value and the repaired crack rating value.

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