Quantum dot, and ink composition, optical member, electronic apparatus, and electronic device including quantum dot

Abstract

A quantum dot, and an ink composition, an optical member, an electronic apparatus, and an electronic device including the quantum dot are provided. The quantum dot includes a core and a first shell, the core including a first semiconductor compound represented by Formula 1, the first shell covering the core and including A1, where a radius of the core of the quantum dot is 5 nm or more, and Formula 1 is: Formula 1 CdxA11-xB1 where in Formula 1, A1 may be a Group II element other than cadmium (Cd), B1 may be a Group VI element, and x may be greater than 0 but not greater than 0.12.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority and the benefit of Korean Patent Application No. 10 - 2023 - 0176769, filed on December 7, 2023, and Korean Patent Application No. 10 - 2024 - 0173946, filed on November 28, 2024, the entire contents of which are incorporated herein by reference. Technical field

[0003] Embodiments of the present disclosure relate to quantum dots, and to an ink composition, an optical member, an electronic device, and an electronic apparatus including the quantum dots. Background art

[0004] Quantum dots can be used as materials for performing one or more suitable optical functions (e.g., light - conversion function and / or light - emitting function, etc.) in optical members and suitable electronic devices. Quantum dots, which are semiconductor nanocrystals having a quantum confinement effect, can have different bandgaps by controlling the size and composition of the nanocrystals, and accordingly can emit light of one or more suitable emission wavelengths.

[0005] An optical member including such quantum dots can be in the form of a thin film (e.g., a thin film patterned for each sub - pixel). Such an optical member can be used as a color - conversion member of a device such as a light source.

[0006] Quantum dots can be used for various purposes in one or more suitable electronic devices. For example, quantum dots can be used as emitters. For example, quantum dots can be included in the emission layer of a light - emitting device including a pair of electrodes and an emission layer, and in this regard, quantum dots can be used as emitters.

[0007] Currently, in order to realize high - quality optical members, electronic devices, and electronic apparatuses, it is desirable or required to develop quantum dots having excellent or suitable photoluminescence quantum yield (PLQY) and long lifetime.

[0008] The above - disclosed information in this background - art section is only for enhancing the understanding of the background of the present disclosure, and thus may contain information that does not constitute prior art. Summary of the invention

[0009] Aspects of one or more embodiments of the present disclosure relate to novel quantum dots and an ink composition, an optical member, an electronic device, and an electronic apparatus including the novel quantum dots.

[0010] Additional aspects will be set forth in part in the following description, and in part will be obvious from the description, or may be learned by practice of the embodiments presented in the present disclosure.

[0011] According to one or more embodiments, a quantum dot includes a core and a first shell, the core includes a first semiconductor compound represented by Formula 1, and the first shell covers (e.g., surrounds) the core and includes A 1 , where the radius of the core of the quantum dot is 5 nm or greater, and Formula 1 is:

[0012] Formula 1

[0013] Cd x A 1 1-x B 1 .

[0014] Wherein, in Formula 1, A 1 includes (e.g., is) a Group II element other than Cd, B 1 includes (e.g., is) a Group VI element, and x is greater than 0 but not greater than 0.12.

[0015] According to one or more embodiments, an ink composition includes quantum dots and a solvent.

[0016] According to one or more embodiments, an optical member includes quantum dots.

[0017] According to one or more embodiments, an electronic device includes quantum dots.

[0018] According to one or more embodiments, an electronic apparatus includes quantum dots. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and other aspects, features, and / or principles of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, where:

[0020] Figure 1 is a schematic cross-sectional view of a quantum dot according to one or more embodiments of the present disclosure;

[0021] Figure 2 is a schematic cross-sectional view of the structure of an electronic device according to one or more embodiments of the present disclosure;

[0022] Figure 3 is a schematic cross-sectional view of the structure of a light-emitting device according to one or more embodiments of the present disclosure;

[0023] Figure 4 is a schematic perspective view of an electronic apparatus including quantum dots according to one or more embodiments of the present disclosure;

[0024] Figure 5 is a diagram schematically illustrating the exterior of a vehicle as an electronic apparatus including quantum dots according to one or more embodiments of the present disclosure; and

[0025] Figures 6A to 6C These are diagrams schematically illustrating the interior of a vehicle according to one or more embodiments of the present disclosure. Detailed embodiments

[0026] The present disclosure may be modified in many alternative forms, and thus specific embodiments will be illustrated in the drawings and described in more detail. However, it should be understood that this is not intended to limit the present disclosure to the specific forms disclosed, but is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present disclosure.

[0027] Reference will now be made in more detail to one or more embodiments, examples of which are illustrated in the accompanying drawings, where like reference numerals refer to like elements throughout and their repeated description may not be provided. In this regard, these embodiments may have different forms and should not be construed as limited to the description set forth herein. Further, these embodiments are provided by way of example so that the present disclosure will be thorough and complete and will fully convey the aspects and features of the present disclosure to those skilled in the art. Accordingly, for those of ordinary skill in the art, processes, elements, and techniques that are not necessary to fully understand the aspects and features of the present disclosure may not be described.

[0028] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Unless otherwise apparent from the present disclosure, when prefixed / postfixed to a list of elements, phrases such as "at least one of...", "a plurality of", "one of...", and other prepositional phrases should be understood to include the disjunctive if written as a conjunctive list and vice versa. For example, the expressions "at least one of a, b, and c", "selected from the group consisting of: a, b, and c", "selected from at least one of a, b, and c", "from at least one of a, b, and c", "from one of a, b, and c", "at least one of a to c" indicate only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variants thereof.

[0029] Since the present disclosure may have different modified embodiments, the embodiments are illustrated in the drawings and described in the detailed description. When referring to one or more embodiments described with reference to the accompanying drawings, the aspects and features of the present disclosure and the methods of achieving them will be apparent. However, the present disclosure may be embodied in many different forms and should not be construed as limited to the one or more embodiments set forth herein. In the drawings, the relative dimensions of elements, layers, and regions may be enlarged for clarity.

[0030] It will be understood that although the terms “first,” “second,” “third,” etc. may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first element, component, region, layer, or section described below may be termed a second element, component, region, layer, or section without departing from the spirit and scope of the present disclosure.

[0031] Unless the context clearly indicates otherwise, as used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms.

[0032] It will be further understood that when the terms “comprises,” “comprising,” “includes,” “including,” “have,” and “having” are used in this specification, there is stated the presence of the recited features, integers, steps, operations, elements, and / or components, but there is not excluded the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0033] It will be understood that when an element (such as a region, layer, film, zone, or section) is referred to as being “on,” “connected to,” or “coupled to” another element (such as a region, layer, film, zone, or section), it can be directly on, directly connected to, or directly coupled to the other element (such as a region, layer, film, zone, or section), or there can be one or more intervening elements. Additionally, it will also be understood that when an element is referred to as being “between” two elements, it can be the only element between the two elements, or there can also be one or more intervening elements. As used herein, the terms “use,” “using,” and “used” can be considered respectively synonymous with the terms “utilize,” “utilizing,” and “utilized.” Also, the term “exemplary” is intended to indicate an example or illustration.

[0034] In the present disclosure, when the particle is spherical, “diameter” indicates the particle size or average particle size, and when the particle is non-spherical, “diameter” indicates the major axis length or average major axis length. The diameter (or size) of the particle can be measured using a scanning electron microscope or a particle size analyzer. As a particle size analyzer, for example, the HORIBA, LA-950 laser particle size analyzer can be used. When measuring the size of the particle using a particle size analyzer, the average particle diameter (or size) is referred to as D 50 。D50 refers to the average diameter (or size) of particles whose cumulative volume corresponds to 50 vol% in a particle size distribution (e.g., cumulative distribution), and refers to the value of the particle size corresponding to 50% of the particles starting from the smallest particles in a distribution curve cumulatively in the order from the smallest particle size to the largest particle size when the total number of particles is 100%.

[0035] In the present disclosure, when the particles are spherical, "radius" indicates the particle radius or the average particle radius, and when the particles are non-spherical, "radius" indicates half of the major axis length or half of the average major axis length. The radius of the particles can be measured using a scanning electron microscope or a particle size analyzer. As the particle size analyzer, for example, a HORIBA, LA-950 laser particle size analyzer can be used.

[0036] As used herein, the term "Group I" may include Group IA elements and Group IB elements on the IUPAC periodic table, and Group I elements may include, for example, silver (Ag) and / or copper (Cu), etc.

[0037] As used herein, the term "Group II" may include Group IIA elements and Group IIB elements on the IUPAC periodic table, and Group II elements include, for example, magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), and / or mercury (Hg), etc.

[0038] As used herein, the term "Group III" may include Group IIIA elements and Group IIIB elements on the IUPAC periodic table, and Group III elements may include, for example, aluminum (Al), gallium (Ga), indium (In), and / or thallium (Tl), etc.

[0039] As used herein, the term "Group VI" may include Group VIA elements and Group VIB elements on the IUPAC periodic table, and Group VI elements may include, for example, oxygen (O), sulfur (S), selenium (Se), and / or tellurium (Te), etc.

[0040] Hereinafter, reference will be made to Figure 1 describe a method for preparing the quantum dot 100 according to one or more embodiments.

[0041] Figure 1 of the description

[0042] Figure 1 is a schematic cross-sectional view of a quantum dot 100 according to one or more embodiments of the present disclosure. The quantum dot 100 includes a core 10 and a first shell 20.

[0043] Quantum dot 100

[0044] Figure 1The quantum dot 100 includes: a core 10 including a first semiconductor compound represented by Formula 1; and a first shell 20 covering the core 10 and including A 1 wherein the radius of the core 10 of the quantum dot 100 is 5 nm or more:

[0045] Formula 1

[0046] Cd x A 1 1-x B 1 .

[0047] In Formula 1, A 1 may be a Group II element other than cadmium (Cd), B 1 may be a Group VI element, and x may be greater than 0 but not greater than 0.12.

[0048] In one or more embodiments, x in Formula 1 can be greater than 0 but not greater than about (e.g., less than or equal to about) 0.12. For example, it can be from about 0.01 to about 0.12, from about 0.02 to about 0.12, from about 0.03 to about 0.12, from about 0.04 to about 0.12, from about 0.05 to about 0.12, from about 0.06 to about 0.12, from about 0.07 to about 0.12, from about 0.08 to about 0.12, from about 0.09 to about 0.12, from about 0.1 to about 0.12, from about 0.11 to about 0.12, from about 0.01 to about 0.11, from about 0.02 to about 0.11, from about 0.03 to about 0.11, from about 0.04 to about 0.11, from about 0.05 to about 0.11, from about 0.06 to about 0.11, from about 0.07 to about 0.11, from about 0.08 to about 0.11, from about 0.09 to about 0.11, from about 0.1 to about 0.11, from about 0.01 to about 0.1, from about 0.02 to about 0.1, from about 0.03 to about 0.1, from about 0.04 to about 0.1, from about 0.05 to about 0.1, from about 0.06 to about 0.1, from about 0.07 to about 0.1, from about 0.08 to about 0.1, from about 0.09 to about 0.1, from about 0.01 to about 0.09, from about 0.02 to about 0.09, from about 0.03 to about 0.09, from about 0.04 to about 0.09, from about 0.05 to about 0.09, from about 0.06 to about 0.09, from about 0.07 to about 0.09, from about 0.08 to about 0.09, from about 0.01 to about 0.08, from about 0.02 to about 0.08, from about 0.03 to about 0.08, from about 0.04 to about 0.08, from about 0.05 to about 0.08, from about 0.06 to about 0.08, from about 0.07 to about 0.08, from about 0.01 to about 0.07, from about 0.02 to about 0.07, from about 0.03 to about 0.07, from about 0.04 to about 0.07, from about 0.05 to about 0.07, from about 0.06 to about 0.07, from about 0.01 to about 0.06, from about 0.02 to about 0.06, from about 0.03 to about 0.06, from about 0.04 to about 0.06, from about 0.05 to about 0.06, from about 0.01 to about 0.05, from about 0.02 to about 0.05, from about 0.03 to about 0.05, from about 0.04 to about 0.05, from about 0.01 to about 0.04, from about 0.02 to about 0.04, from about 0.03 to about 0.04, from about 0.01 to about 0.03, from about 0.02 to about 0.03, or from about 0.01 to about 0.02.

[0049] In one or more embodiments, the first shell 20 may further include B 2 and B 3 , where B 2 and B 3 may each independently include (e.g., be) a Group VI element.

[0050] In one or more embodiments, A1 may include (e.g., be) Zn, Mg, Ca, Hg, and / or combinations thereof (e.g., any suitable combination).

[0051] In one or more embodiments, B 1 、B 2 and B 3 may each independently include (e.g., be) O, S, Se, Te, and / or combinations thereof (e.g., any suitable combination).

[0052] In one or more embodiments, A 1 may be Zn or Mg, B 1 may be S or Se, B 2 may be S or Se, and B 3 may be S or Se. In one or more embodiments, A 1 may be Zn, B 1 may be Se, B 2 may be Se, and B 3 may be S.

[0053] In one or more embodiments, the core 10 and the first shell 20 may each include a Group II-VI semiconductor compound.

[0054] The Group II-VI semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and / or combinations thereof (e.g., any suitable combination).

[0055] In one or more embodiments, the core 10 may include a first semiconductor compound, and the first semiconductor compound may be a Group II-VI semiconductor compound. For example, the first semiconductor compound may include CdZnSe.

[0056] In one or more embodiments, the first shell 20 may include a second semiconductor compound represented by Formula 2:

[0057] Formula 2

[0058] A 1 B2 y B 3 1-y 。

[0059] In Formula 2, A 1 may be a Group II element, and B 2 and B 3 may each independently be a Group VI element, and y may be greater than 0 but less than 1.

[0060] In one or more embodiments, the first shell 20 may include a second semiconductor compound, and the second semiconductor compound may be a II-VI group semiconductor compound. For example, the second semiconductor compound may include ZnSeS.

[0061] In one or more embodiments, the A included in the core 10 1 and the A included in the first shell 20 1 may be substantially the same as or substantially different from each other.

[0062] In one or more embodiments, B 1 and B 2 may be substantially the same as each other.

[0063] In one or more embodiments, the Cd included in the core 10 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0064] In one or more embodiments, the A included in the core 10 1 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0065] In one or more embodiments, the B included in the core 10 1 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0066] In one or more embodiments, the A included in the first shell 20 1 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0067] In one or more embodiments, the B included in the first shell 20 2 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0068] In one or more embodiments, the B included in the first shell 20 3 may be present in a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration.

[0069] In one or more embodiments, the radius L1 of the core 10 in the quantum dot 100 may be about 5 nm or greater. For example, it may be about 5 nm to about 8 nm, about 5.5 nm to about 7.5 nm, about 6 nm to about 7 nm, or about 6.5 nm to about 7 nm.

[0070] In one or more embodiments, the thickness L2 of the first shell 20 in the quantum dot 100 may range from about 1 nm to about 5 nm or from about 2 nm to about 5 nm.

[0071] In one or more embodiments, the ratio of the radius L1 of the core 10 to the thickness L2 of the first shell 20 may range from about 1 to about 8.

[0072] For example, the ratio of the radius L1 of the core 10 to the thickness L2 of the first shell 20 may range from about 1 to about 8, about 1.1 to about 3.9, about 1.2 to about 3.8, about 1.3 to about 3.7, about 1.4 to about 3.6, about 1.5 to about 3.5, about 1.6 to about 3.4, about 1.7 to about 3.3, about 1.8 to about 3.2, about 1.9 to about 3.1, about 2.0 to about 3.0, about 2.1 to about 2.9, about 2.2 to about 2.8, about 2.3 to about 2.7, or about 2.4 to about 2.6.

[0073] As used herein, the expression "radius L1 of the core 10" refers to the distance from the center of the quantum dot 100 to the interface between the core 10 and the first shell 20.

[0074] As used herein, the expression "thickness L2 of the first shell 20" refers to the distance from the interface between the core 10 and the first shell 20 to the surface of the first shell 20. For example, the thickness L2 of the first shell 20 corresponds to the value obtained by subtracting the radius L1 of the core 10 from the distance L3 from the center of the quantum dot 100 to the surface of the first shell 20.

[0075] When the thickness L2 of the first shell 20 or the ratio of the radius L1 of the core 10 to the thickness L2 of the first shell 20 is within the above ranges, the quantum dot 100 according to one or more embodiments can achieve excellent or appropriate luminescence efficiency and long lifetime.

[0076] In one or more embodiments, the quantum dot 100 may further include a second shell covering the first shell 20.

[0077] In one or more embodiments, the quantum dot 100 may be a nanoparticle, a nanotube, a nanowire, a nanofiber, and / or a nanoplate, etc., specifically in the form of a spherical particle, a cone particle, a multi-arm particle, or a cube particle.

[0078] In one or more embodiments, the quantum dot 100 may be spherical.

[0079] In one or more embodiments, the maximum emission wavelength of the photoluminescence (PL) spectrum of the quantum dots 100 may be in the range of about 410 nm to about 480 nm, about 420 nm to about 470 nm, about 430 nm to about 465 nm, or about 440 nm to about 460 nm.

[0080] In one or more embodiments, the quantum dots 100 may emit blue light.

[0081] In one or more embodiments, the photoluminescence (PL) efficiency of the quantum dots 100 may be in the range of about 50% to about 98%, about 55% to about 97%, or about 60% to about 95%.

[0082] In one or more embodiments, the full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dots 100 may be in the range of about 20 nm to about 23 nm or about 20 nm to about 30 nm. When the FWHM of the quantum dots 100 is within this range, color purity or color reproducibility can be improved. In one or more embodiments, since the light emitted by the quantum dots 100 is emitted in all directions, a wide viewing angle can be improved.

[0083] In one or more embodiments, the quantum dots 100 may be prepared by the method for preparing quantum dots described in more detail below.

[0084] The quantum dots 100 may be synthesized by a wet chemical process, a metalorganic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, and / or a similar (e.g., any suitable) process.

[0085] The wet chemical process is a method including mixing precursor materials with an organic solvent and then growing quantum dot particle crystals. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot particle crystals and controls the growth of the quantum dot particle crystals so that the growth of the quantum dot particle crystals can be controlled or selected by a process that is less costly and easier than vapor deposition methods such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0086] In addition to the aforementioned group II-VI semiconductor compounds, the quantum dots 100 may further include group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, and / or a combination thereof (e.g., any suitable combination).

[0087] Examples of II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, Cd ... dZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe, etc.; and / or their (for example, any appropriate) combinations.

[0088] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb, etc.; and / or (e.g., any appropriate) combinations thereof. In one or more embodiments, the III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including the Group II element may include InZnP, InGaZnP, and / or InAlZnP, and the like.

[0089] Examples of III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 and / or InTe, etc.; ternary compounds, such as InGaS 3and / or InGaSe 3 etc.; and / or its (e.g., any suitable) combination.

[0090] Examples of Group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS 2 , AgInSe 2 , AgGaS, AgGaS 2 , AgGaSe 2 , CuInS, CuInS 2 , CuInSe 2 , CuGaS 2 , CuGaSe 2 , CuGaO 2 , AgGaO 2 and / or AgAlO 2 etc.; quaternary compounds such as AgInGaS 2 and / or AgInGaSe 2 etc.; and / or its (e.g., any suitable) combination.

[0091] Examples of Group IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe etc.; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe etc.; and / or its (e.g., any suitable) combination.

[0092] Group IV elements or compounds may include: single elements such as Si and / or Ge etc.; binary compounds such as SiC and / or SiGe etc.; and / or its (e.g., any suitable) combination.

[0093] Each element included in a multi-element compound (such as a binary compound, a ternary compound, and a quaternary compound) may be present in the particles at a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration. For example, the above formula refers to the type (species) of elements contained in the compound, and the element ratios in the compound may vary. For example, AgInGaS 2 refers to AgIn x Ga 1-x S 2 (0 < x < 1).

[0094] The shell of the quantum dot 100 (i.e., the first shell 20 and / or the second shell) can act as a protective layer to prevent chemical denaturation of the core 10 to maintain semiconductor properties, and / or act as a charging layer to endow the quantum dot 100 with electrophoretic properties. The shell can be a single layer or multiple layers. The interface between the core 10 and the first shell 20 can have a concentration gradient, where the concentration of the elements present in the first shell 20 decreases towards the center of the core 10.

[0095] The shell of the quantum dot 100 can further include: oxides of metals, metalloids or non-metals; semiconductor compounds; and / or combinations thereof (e.g., any suitable combination). Examples of oxides of metals, metalloids or non-metals can include: binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO, MnO, Mn 2 O 3 、Mn 3 O 4 、CuO, FeO, Fe 2 O 3 、Fe 3 O 4 、CoO, Co 3 O 4 and / or NiO, etc.; ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and / or CoMn 2 O 4 etc.; and / or combinations thereof (e.g., any suitable combination). Examples of semiconductor compounds can include: as described above, Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; and / or combinations thereof (e.g., any suitable combination). For example, semiconductor compounds can include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS 2 、GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb and / or combinations thereof (e.g., any suitable combination).

[0096] By controlling the size (e.g., diameter and / or radius) of the quantum dots 100, the bandgap can be adjusted so that light having one or more appropriate wavelength bands can be obtained from the emission layer including the quantum dots 100. Accordingly, by using quantum dots 100 of different sizes, a light-emitting device that emits light having one or more appropriate wavelength bands can be realized. In one or more embodiments, the size of the quantum dots 100 can be selected to emit red, green, and / or blue light. In one or more embodiments, the size of the quantum dots 100 can be configured to emit white light by combining light of one or more appropriate colors.

[0097] The quantum dots 100 according to one or more embodiments can satisfy the range of the radius L1 of the core 10, x, or both the range of the radius L1 of the core 10 and x (e.g., simultaneously), so as to have excellent or appropriate luminous efficiency and long-life characteristics. Therefore, the use of the quantum dots 100 can provide high-quality optical components, electronic devices, and / or electronic apparatuses.

[0098] In one or more embodiments, the first shell 20 of the quantum dots 100 according to one or more embodiments satisfies the above characteristics, so as to have excellent or appropriate luminous efficiency and long-life characteristics. Therefore, the use of the quantum dots 100 can provide high-quality optical components, electronic devices, and / or electronic apparatuses.

[0099] In one or more embodiments, if (e.g., when) both the core 10 and the shell in the quantum dots 100 according to one or more embodiments include II-VI group semiconductor compounds, then an ionic bonding component can be included at a high concentration so as to improve the bandgap characteristics, resulting in long-life characteristics. Therefore, the use of the quantum dots 100 can provide high-quality optical components, electronic devices, and / or electronic apparatuses.

[0100] In one or more embodiments, if (e.g., when) the quantum dots 100 according to one or more embodiments are mixed with a solvent having a high boiling point for forming an ink composition, then the exchange of Cd cations caused by Cu impurities in the solvent having a high boiling point can be suppressed or reduced, and thus excellent or appropriate luminous efficiency and long-life characteristics can be maintained and improved. Therefore, the use of the quantum dots 100 can provide high-quality optical components, electronic devices, and / or electronic apparatuses.

[0101] Ink composition

[0102] One or more embodiments of the present disclosure include an ink composition that includes quantum dots and a solvent.

[0103] In one or more embodiments, based on 100 total weight parts of the ink composition, the amount of the quantum dots can be in the range of about 1.0 weight part to about 10 weight parts or about 2 weight parts to about 5 weight parts.

[0104] In one or more embodiments, based on 100 total parts by weight of the ink composition, the amount of quantum dots can range from about 80 parts by weight to about 99.9 parts by weight or from about 90 parts by weight to about 99.8 parts by weight.

[0105] In one or more embodiments, the viscosity of the ink composition can range from about 2 cP to about 10 cP.

[0106] In one or more embodiments, the surface tension of the ink composition can range from about 20 dynes / cm to about 40 dynes / cm.

[0107] In one or more embodiments, the vapor pressure of the ink composition can be about 10 -2 mmHg or lower.

[0108] When the viscosity, surface tension, and vapor pressure of the ink composition including quantum dots are within the above ranges, the inkjet process of jetting the ink composition can be more easily performed.

[0109] In one or more embodiments, the solvent can be a hydrophilic solvent or a hydrophobic solvent.

[0110] In one or more embodiments, the hydrophobic solvent can include at least one of an aliphatic hydrocarbon series and an aromatic hydrocarbon series.

[0111] For example, the hydrophobic solvent can include at least one of the following: alkanes, including n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, dodecane, hexadecane, and / or octadecane, etc.; halogenated hydrocarbons, including dichloromethane, 1,2-dichloroethane, and / or 1,1,2-trichloroethane, etc.; cycloalkanes, including cyclohexane and / or methylcyclohexane, etc.; aromatic hydrocarbons, including toluene, xylene, trimethylbenzene (e.g., mesitylene), ethylbenzene, n-hexylbenzene, octylbenzene, cyclohexylbenzene, and / or tetralin, etc.; and halogenated aromatic hydrocarbons, including chlorobenzene and / or o-dichlorobenzene, etc.

[0112] In one or more embodiments, the hydrophilic solvent can include at least one of an alcohol solvent, an ether solvent, a ketone solvent, an ester solvent, and an aromatic hydrocarbon solvent.

[0113] For example, the hydrophilic solvent may include at least one of the following: ethers such as alkylene glycol alkyl ethers (such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and / or propylene glycol methyl ethyl ether, etc.), diethylene glycol dialkyl ethers (such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, and / or diethylene glycol dibutyl ether, etc.), and / or anisole (methoxybenzene), etc.; esters such as ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, ethyl 3-phenylpropionate, cyclic esters (such as γ-butyrolactone, etc.), methoxyethyl acetate, ethoxyethyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, and / or alkoxyacetic acid alkyl esters (such as butyl methoxyacetate and / or amyl methoxyacetate, etc.), etc.; aromatic hydrocarbons such as benzene, toluene, xylene, and / or mesitylene, etc.; ketones such as methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and / or cyclohexanone, etc.; and alcohols such as ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, and / or glycerol, etc.

[0114] In one or more embodiments, the boiling point of the solvent may be about 120 °C or higher. For example, the boiling point of the solvent may be about 120 °C to about 400 °C, about 120 °C to about 350 °C, about 120 °C to about 300 °C, about 120 °C to about 250 °C, or about 120 °C to about 240 °C.

[0115] In one or more embodiments, the boiling point of the solvent may be about 200 °C or higher. For example, the boiling point of the solvent may be about 200 °C to about 400 °C, about 200 °C to about 350 °C, about 200 °C to about 300 °C, about 200 °C to about 250 °C, or about 200 °C to about 240 °C.

[0116] In one or more embodiments, the solvent may be a single solvent or a mixed solvent of at least two types (kinds) of solvents.

[0117] In one or more embodiments, the solvent may be a mixed solvent of at least two types (kinds) of hydrophobic solvents. For example, the solvent may include three types (kinds) of hydrophobic solvents, and the three types (kinds) of hydrophobic solvents may be mixed in a volume ratio of 1:1:1, 3:2:1, 4:3:1, 4:3:2, 5:3:1, or 6:3:1.

[0118] An ink composition including quantum dots and a solvent according to one or more embodiments has excellent or appropriate luminous efficiency and long-life characteristics, and thus using the ink composition in the formation of inks can provide high-quality optical members, electronic devices, and / or electronic apparatuses.

[0119] Electronic device

[0120] Quantum dots can be used in one or more suitable electronic devices. Accordingly, one or more embodiments include an electronic device that includes quantum dots.

[0121] In one or more embodiments, the electronic device includes a light source and a color conversion member disposed in a path of light emitted from the light source, wherein the color conversion member includes quantum dots.

[0122] Figure 2 description

[0123] Figure 2 is a schematic cross-sectional view of the structure of an electronic device 200A according to one or more embodiments of the present disclosure. Figure 2 The electronic device 200A includes: a substrate 210; a light source 220 disposed on the substrate 210; and a color conversion member 230 disposed on the light source 220.

[0124] For example, the light source 220 can be a backlight unit (BLU) for a liquid crystal display (LCD), a fluorescent lamp, a light emitting device (e.g., an organic light emitting device or a quantum dot light emitting device (QLED)), and / or a combination thereof (e.g., any suitable combination). The color conversion member 230 can be disposed in at least one traveling direction of the light emitted from the light source 220 (e.g., disposed in the path of the light).

[0125] At least one region of the color conversion member 230 in the electronic device 200A can include quantum dots, and the at least one region can absorb the light emitted from the light source 220 to emit blue light having a maximum emission wavelength in the range of about 410 nm to about 480 nm.

[0126] Here, the fact that the color conversion member 230 is disposed in at least one traveling direction of the light emitted from the light source 220 (e.g., disposed in the path of the light) does not exclude the case where other elements can be additionally included between the color conversion member 230 and the light source 220.

[0127] In one or more embodiments, a polarizing plate, a liquid crystal layer, a light guide plate, a diffusion plate, a prism sheet, a microlens sheet, a brightness enhancement sheet, a reflective film, a color filter, and / or a combination thereof (e.g., any suitable combination) can be additionally disposed between the light source 220 and the color conversion member 230.

[0128] In one or more embodiments, a polarizing plate, a liquid crystal layer, a light guide plate, a diffusion plate, a prism sheet, a microlens sheet, a brightness enhancement sheet, a reflective film, a color filter, and / or a combination thereof (e.g., any suitable combination) can be additionally disposed on the color conversion member 230.

[0129] Figure 2The electronic device 200A is an example of a device according to one or more of the above-described embodiments, and may have one or more suitable shapes appropriate in the art, and accordingly, may further include one or more suitable configurations appropriate in the art.

[0130] In one or more embodiments, the electronic device may have a structure in which a light source, a light guide plate, a color conversion member, a first polarizing plate, a liquid crystal layer, a color filter, and a second polarizing plate are sequentially arranged.

[0131] In one or more embodiments, the electronic device may have a structure in which a light source, a light guide plate, a first polarizing plate, a liquid crystal layer, a second polarizing plate, and a color conversion member are sequentially arranged.

[0132] In one or more of the above-described embodiments, the color filter may include pigments and / or dyes. In one or more of the above-described embodiments, one of the first polarizing plate and the second polarizing plate may be a vertical polarizing plate, and the other may be a horizontal polarizing plate.

[0133] Light-emitting device

[0134] In one or more embodiments, the quantum dots described herein may be used as emitters. Accordingly, one or more embodiments of the present disclosure include an electronic device including a light-emitting device including: a first electrode; a second electrode facing the first electrode; and a sandwich layer disposed between the first electrode and the second electrode, wherein the light-emitting device (e.g., an emission layer included in the light-emitting device) includes quantum dots. The light-emitting device may further include: a hole transport region between the first electrode and the emission layer; an electron transport region between the emission layer and the second electrode; and / or a combination thereof (e.g., any suitable combination).

[0135] Figure 3 Description of

[0136] Figure 3 is a schematic diagram of the structure of a light-emitting device 1A according to one or more embodiments of the present disclosure.

[0137] The light-emitting device 1A includes: a first electrode 110; a second electrode 150 facing the first electrode 110; and a sandwich layer 130 disposed between the first electrode 110 and the second electrode 150 and including quantum dots. Hereinafter, each layer of the light-emitting device 1A will be described.

[0138] At least one quantum dot may be used in a light-emitting device (e.g., an organic light-emitting device). In this regard, one or more embodiments of the present disclosure include a light-emitting device including: a first electrode; a second electrode facing the first electrode; and a sandwich layer disposed between the first electrode and the second electrode and including an emission layer; wherein the light-emitting device includes quantum dots.

[0139] In one or more embodiments, the first electrode of the light-emitting device may be an anode, the second electrode of the light-emitting device may be a cathode, and the interlayer may further include a hole transport region disposed between the first electrode and the emission layer and an electron transport region disposed between the emission layer and the second electrode, wherein the hole transport region may include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, and / or a combination thereof (e.g., any suitable combination), and the electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, and / or a combination thereof (e.g., any suitable combination).

[0140] In one or more embodiments, quantum dots may be included between the first electrode and the second electrode of the light-emitting device. Thus, quantum dots may be included in the interlayer (e.g., the emission layer of the light-emitting device) of the light-emitting device.

[0141] In one or more embodiments, the emission layer in the interlayer of the light-emitting device may include a dopant and a host, and the dopant may include quantum dots. For example, quantum dots may be used as the host. The emission layer may emit red light, green light, blue light, and / or white light. For example, the emission layer may emit blue light. The blue light may have, for example, a maximum emission wavelength in the range of about 400 nm to about 490 nm.

[0142] In one or more embodiments, the emission layer in the interlayer of the light-emitting device may include a dopant and a host, the host may include quantum dots, and the dopant may emit blue light. For example, the dopant may include a transition metal and m ligands, and m may be an integer selected from 1 to 6. The m ligands may be substantially the same or substantially different from each other, at least one of the m ligands may be connected to the transition metal via a carbon-transition metal bond, and the carbon-transition metal bond may be a coordination bond. For example, at least one of the m ligands may be a carbene ligand (e.g., the carbene ligand included in Ir(pmp) 3 etc.). The transition metal may be, for example, iridium, platinum, osmium, palladium, rhodium, and / or gold, etc. More details regarding the emission layer and the dopant are the same as those described herein.

[0143]

[0144] In one or more embodiments, the light-emitting device may further include a capping layer disposed outside the first electrode or outside the second electrode.

[0145] In one or more embodiments, the light-emitting device may further include at least one of a first capping layer disposed outside the first electrode and a second capping layer disposed outside the second electrode, and at least one of the first capping layer and the second capping layer may include quantum dots. More details regarding the first capping layer and / or the second capping layer are the same as those described herein.

[0146] In one or more embodiments, a light-emitting device may include: a first capping layer disposed outside the first electrode and including quantum dots; a second capping layer disposed outside the second electrode and including quantum dots; or both the first capping layer and the second capping layer.

[0147] As used herein, the expression “(the interlayer and / or the capping layer) includes quantum dots” may be interpreted as “(the interlayer and / or the capping layer) includes one type (species) of quantum dots disclosed herein or two or more different types (species) of quantum dots disclosed herein”.

[0148] As used herein, the term “interlayer” refers to a single layer and / or multiple layers disposed between the first electrode and the second electrode of a light-emitting device.

[0149] One or more embodiments of the present disclosure include: an electronic device including quantum dots and / or a light-emitting device. The electronic device may further include a thin-film transistor. For example, the electronic device may further include a thin-film transistor including a source electrode and a drain electrode, wherein the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode. In one or more embodiments, the electronic device may further include a color filter, a color conversion layer, a touch screen layer, a polarization layer, and / or a combination thereof (e.g., any suitable combination). More details regarding the electronic device are the same as those described herein.

[0150] Hereinafter, reference will be made to Figure 3 describe the structure of a light-emitting device 1A according to one or more embodiments and a method of manufacturing the light-emitting device 1A.

[0151] Figure 3 is a schematic cross-sectional view of a light-emitting device 1A according to one or more embodiments of the present disclosure. The light-emitting device 1A includes a first electrode 110, an interlayer 130, and a second electrode 150.

[0152] The first electrode 110

[0153] In Figure 3 , a substrate may be additionally disposed under the first electrode 110 or on the second electrode 150. In one or more embodiments, a glass substrate or a plastic substrate may be used as the substrate. In one or more embodiments, the substrate may be a flexible substrate and may include a plastic having excellent or suitable heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, and / or a combination thereof (e.g., any suitable combination).

[0154] The first electrode 110 can be formed by, for example, depositing or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be a high work function material that facilitates hole injection.

[0155] The first electrode 110 can be a reflective electrode, a transflective electrode, or a transmissive electrode. In one or more embodiments, if (e.g., when) the first electrode 110 is a transmissive electrode, the material for forming the first electrode 110 can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), and / or a combination thereof (e.g., any suitable combination). In one or more embodiments, if (e.g., when) the first electrode 110 is a transflective electrode or a reflective electrode, the material for forming the first electrode 110 can include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and / or a combination thereof (e.g., any suitable combination).

[0156] The first electrode 110 can have a single-layer structure including a single layer (e.g., consisting of a single layer) or a multi-layer structure including multiple layers. For example, the first electrode 110 can have a three-layer structure of ITO / Ag / ITO.

[0157] Interlayer 130

[0158] The interlayer 130 is disposed on the first electrode 110. The interlayer 130 can include an emission layer.

[0159] The interlayer 130 can further include: a hole transport region between the first electrode 110 and the emission layer; and an electron transport region between the emission layer and the second electrode 150.

[0160] In addition to one or more suitable organic materials, the interlayer 130 can further include metal-containing compounds (such as organometallic compounds) and / or inorganic materials (such as quantum dots), etc.

[0161] In one or more embodiments, the interlayer 130 can include i) two or more emission units stacked in sequence between the first electrode 110 and the second electrode 150, and ii) a charge generation layer between adjacent two emission units. When the interlayer 130 includes two or more light-emitting units and a charge generation layer, the light-emitting device 1A can be a tandem light-emitting device.

[0162] The hole transport region in the interlayer 130

[0163] The hole transport region may have i) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a single material (e.g., consisting of a single material), ii) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a plurality of different materials (e.g., consisting of a plurality of different materials), or iii) a multi-layer structure including a plurality of layers that includes a plurality of different materials.

[0164] The hole transport region may include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, and / or a combination thereof (e.g., any suitable combination).

[0165] For example, the hole transport region may have a multi-layer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission assisting layer structure, a hole injection layer / emission assisting layer structure, a hole transport layer / emission assisting layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, where the layers of each structure are stacked in sequence on the first electrode 110 (starting from the first electrode 110).

[0166] The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, and / or a combination thereof (e.g., any suitable combination):

[0167] Formula 201

[0168]

[0169] Formula 202

[0170]

[0171] In Formula 201 and Formula 202, L 201 to L 204 may each independently be an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, L 205 may be *-O-*', *-S-*', *-N(Q 201 )-*', an unsubstituted or at least one R 10a substituted C 1 -C 20 alkylene group, an unsubstituted or at least one R 10a substituted C 2 -C 20 alkenylene group, an unsubstituted or at least one R 10a substituted C 3-C 60 a carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, xa1 to xa4 can each independently be an integer selected from 0 to 5, xa5 can be an integer selected from 1 to 10, R 201 to R 204 and Q 201 can each independently be an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, R 201 and R 202 can optionally be linked via a single bond, an unsubstituted or at least one R 10a substituted C 1 -C 5 alkylene group or an unsubstituted or at least one R 10a substituted C 2 -C 5 alkenylene group are connected to each other to form an unsubstituted or at least one R 10a substituted C 8 -C 60 polycyclic group (e.g., carbazolyl, etc.) (e.g., compound HT16, etc.), R 203 and R 204 can optionally be linked via a single bond, an unsubstituted or at least one R 10a substituted C 1 -C 5 alkylene group or an unsubstituted or at least one R 10a substituted C 2 -C 5 alkenylene group are connected to each other to form an unsubstituted or at least one R 10a substituted C 8 -C 60 polycyclic group, and na1 can be an integer selected from 1 to 4.

[0172] For example, each of Formula 201 and Formula 202 can include at least one group selected from the groups represented by Formula CY201 to Formula CY217 (e.g., can be any one of the groups represented by Formula CY201 to Formula CY217):

[0173]

[0174] In Formula CY201 to Formula CY217, R 10b and R 10cEach may be the same as reference R 10a As described, ring CY 201 To ring CY 204 Each may independently be C 3 -C 20 A carbocyclic group or C 1 -C 20 A heterocyclic group, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or substituted by R 10a Substituted.

[0175] In one or more embodiments, in formulas CY201 to CY217, ring CY 201 To ring CY 204 Each may independently be phenyl, naphthyl, phenanthryl or anthryl.

[0176] In one or more embodiments, each of formulas 201 and 202 may include at least one of the groups represented by formulas CY201 to CY203.

[0177] In one or more embodiments, formula 201 may include at least one of the groups represented by formulas CY201 to CY203 and / or at least one of the groups represented by formulas CY204 to CY217.

[0178] In one or more embodiments, in formula 201, xa1 may be 1, R 201 May be one of the groups represented by formulas CY201 to CY203, xa2 may be 0, and R 202 May be one of the groups represented by one of formulas CY204 to CY207.

[0179] In one or more embodiments, each of formulas 201 and 202 may not include (e.g., may exclude) the groups represented by formulas CY201 to CY203.

[0180] In one or more embodiments, each of formulas 201 and 202 may not include (e.g., may exclude) the groups represented by formulas CY201 to CY203, and may include at least one of the groups represented by formulas CY204 to CY217.

[0181] In one or more embodiments, each of formulas 201 and 202 may not include (e.g., may exclude) the groups represented by formulas CY201 to CY217.

[0182] For example, the hole transport region may include at least one selected from (e.g., selected from) Compound HT1 to Compound HT46; m-MTDATA; TDATA; 2-TNATA; NPB (NPD); β-NPB; TPD; Spiro-TPD; Spiro-NPB; methylated NPB; TAPC; HMTPD; 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA); polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA); poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS); polyaniline / camphorsulfonic acid (PANI / CSA); polyaniline / poly(4-styrenesulfonate) (PANI / PSS); poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butyl)phenyl)diphenylamine)] (TFB); and / or its (e.g., any suitable) combination:

[0183]

[0184]

[0185]

[0186]

[0187]

[0188] The thickness of the hole transport region may be in the range of about to about For example, about to about When the hole transport region includes a hole injection layer, a hole transport layer, and / or its (e.g., any suitable) combination, the thickness of the hole injection layer may be in the range of about to about For example, about to about and the thickness of the hole transport layer may be in the range of about to about For example, about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0189] The emission assisting layer can increase the light emission efficiency by compensating the optical resonance distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block or reduce the leakage of electrons from the emission layer to the hole transport region. The materials that can be included in the hole transport region can be included in the emission assisting layer and the electron blocking layer.

[0190] p-dopant

[0191] In addition to the aforementioned materials, the hole transport region may further include a charge generation material for improving the conduction properties. The charge generation material may be uniformly (e.g., substantially uniformly) or non-uniformly (e.g., substantially non-uniformly) dispersed in the hole transport region (e.g., in the form of a single layer including the charge generation material (e.g., consisting of the charge generation material)).

[0192] The charge generation material may be, for example, a p-dopant.

[0193] For example, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of -3.5 eV or less.

[0194] In one or more embodiments, the p-dopant may include a quinone derivative, a cyano-containing compound, a compound including element EL1 and element EL2, and / or a combination thereof (e.g., any suitable combination).

[0195] Examples of the quinone derivative may include TCNQ and / or F4-TCNQ, etc.

[0196] Examples of the cyano-containing compound may include TCNQ, F4-TCNQ, HAT-CN, and / or a compound represented by Formula 221, etc.:

[0197]

[0198] Formula 221

[0199]

[0200] In Formula 221, R 221 to R 223 may each independently be an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, and at least one of R 221 to R 223 may each independently be a C 3 -C 60 carbocyclic group or C 1 -C 60 heterocyclic group substituted by: cyano; -F; -Cl; -Br; -I; C 1 -C 20an alkyl group; and / or (eg, any suitable) combinations thereof.

[0201] In a compound including element EL1 and element EL2, element EL1 may be a metal, a metalloid, and / or (eg, any appropriate) combination thereof, and element EL2 may be a nonmetal, a metalloid, and / or (eg, any appropriate) combination thereof.

[0202] Examples of metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and / or cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), and / or barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), etc.); ), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag) and / or gold (Au), etc.); late transition metals (e.g., zinc (Zn), indium (In) and / or tin (Sn), etc.); and / or lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and / or lutetium (Lu), etc.), etc.

[0203] Examples of metalloids may include silicon (Si), antimony (Sb), and / or tellurium (Te), among others.

[0204] Examples of non-metal may include oxygen (O) and / or halogen (eg, F, Cl, Br, and / or I, etc.), and the like.

[0205] For example, the compound including element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides and / or metalloid iodides, etc.), metal tellurides and / or (e.g., any appropriate) combinations thereof.

[0206] Examples of metal oxides may include tungsten oxides (eg, WO, W 2 O 3 , WO 2 , WO 3 and / or W 2 O 5 etc.), vanadium oxides (e.g., VO, V 2 O 3 , VO2 and / or V 2 O 5 etc.), molybdenum oxides (e.g., MoO, Mo 2 O 3 , MoO 2 , MoO 3 and / or Mo 2 O 5 etc.) and / or rhenium oxides (e.g., ReO 3 etc.) etc.

[0207] Examples of metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and / or lanthanide metal halides, etc.

[0208] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and / or CsI, etc.

[0209] Examples of alkaline earth metal halides may include BeF 2 , MgF 2 , CaF 2 , SrF 2 , BaF 2 , BeCl 2 , MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 , BeBr 2 , MgBr 2 , CaBr 2 , SrBr 2 , BaBr 2 , BeI 2 , MgI 2 , CaI 2 , SrI 2 and / or BaI 2 etc.

[0210] Examples of transition metal halides may include titanium halides (e.g., TiF 4 , TiCl 4 , TiBr 4 and / or TiI 4 etc.), zirconium halides (e.g., ZrF 4 , ZrCl 4 , ZrBr 4 and / or ZrI 4 , hafnium halides (e.g., HfF4 , HfCl 4 , HfBr 4 and / or HfI 4 etc.), vanadium halides (e.g., VF 3 , VCl 3 , VBr 3 and / or VI 3 etc.), niobium halides (e.g., NbF 3 , NbCl 3 , NbBr 3 and / or NbI 3 etc.), tantalum halides (e.g., TaF 3 , TaCl 3 , TaBr 3 and / or TaI 3 etc.), chromium halides (e.g., CrF 3 , CrCl 3 , CrBr 3 and / or CrI 3 etc.), molybdenum halides (e.g., MoF 3 , MoCl 3 , MoBr 3 and / or MoI 3 etc.), tungsten halides (e.g., WF 3 , WCl 3 , WBr 3 and / or WI 3 etc.), manganese halides (e.g., MnF 2 , MnCl 2 , MnBr 2 and / or MnI 2 etc.), technetium halides (e.g., TcF 2 , TcCl 2 , TcBr 2 and / or TcI 2 etc.), rhenium halides (e.g., ReF 2 , ReCl 2 , ReBr 2 and / or ReI 2 etc.), ferrous halides (e.g., FeF 2 , FeCl 2 , FeBr 2 and / or FeI 2 etc.), ruthenium halides (e.g., RuF 2 , RuCl 2 , RuBr 2 and / or RuI 2 etc.), osmium halides (e.g., OsF 2 , OsCl2 , OsBr 2 and / or OsI 2 etc.), cobalt halides (e.g., CoF 2 , CoCl 2 , CoBr 2 and / or CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 and / or RhI 2 etc.), iridium halides (e.g., IrF 2 , IrCl 2 , IrBr 2 and / or IrI 2 etc.), nickel halides (e.g., NiF 2 , NiCl 2 , NiBr 2 and / or NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 and / or PdI 2 etc.), platinum halides (e.g., PtF 2 , PtCl 2 , PtBr 2 and / or PtI 2 etc.), cuprous halides (e.g., CuF, CuCl, CuBr and / or CuI etc.), silver halides (e.g., AgF, AgCl, AgBr and / or AgI etc.) and / or gold halides (e.g., AuF, AuCl, AuBr and / or AuI etc.) etc.

[0211] Examples of post-transition metal halides may include zinc halides (e.g., ZnF 2 , ZnCl 2 , ZnBr 2 and / or ZnI 2 etc.), indium halides (e.g., InI 3 etc.) and / or tin halides (e.g., SnI 2 etc.) etc.

[0212] Examples of lanthanide metal halides may include YbF, YbF 2 , YbF 3 , SmF 3 , YbCl, YbCl 2 , YbCl 3 , SmCl 3 , YbBr, YbBr 2 , YbBr3 、SmBr 3 、YbI, YbI 2 、YbI 3 and / or SmI 3 etc.

[0213] Examples of metalloid halides may include antimony halides (e.g., SbCl 5 etc.) etc.

[0214] Examples of metal tellurides may include alkali metal tellurides (e.g., Li 2 Te, Na 2 Te, K 2 Te, Rb 2 Te and / or Cs 2 Te etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe and / or BaTe etc.), transition metal tellurides (e.g., TiTe 2 , ZrTe 2 , HfTe 2 , V 2 Te 3 , Nb 2 Te 3 , Ta 2 Te 3 , Cr 2 Te 3 , Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe and / or Au 2 Te etc.), post-transition metal tellurides (e.g., ZnTe etc.) and / or lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe and / or LuTe etc.) etc.

[0215] The emission layer in the interlayer 130

[0216] When the light-emitting device 1A is a full-color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and / or a blue emission layer according to sub-pixels. In one or more embodiments, the emission layer may have a stacked structure of two or more layers among a red emission layer, a green emission layer, and a blue emission layer, where the two or more layers are in contact with each other or separated from each other to emit white light. In one or more embodiments, the emission layer may include two or more materials among a red light-emitting material, a green light-emitting material, and a blue light-emitting material, where the two or more materials are mixed with each other in a single layer to emit white light.

[0217] The emission layer may include quantum dots.

[0218] As used herein, the term "quantum dot" refers to a crystal of a semiconductor compound and may include any material capable of emitting light of one or more appropriate emission wavelengths according to the size of the crystal. By adjusting the elemental ratio in the quantum dot compound, the quantum dot may emit light of one or more appropriate emission wavelengths.

[0219] The diameter of the quantum dot may be in the range of, for example, about 1 nm to about 10 nm.

[0220] The quantum dots may be synthesized by a wet chemical process, a metalorganic chemical vapor deposition process, a molecular beam epitaxy process, and / or a similar (e.g., any suitable) process.

[0221] The wet chemical process is a method including mixing a precursor material with an organic solvent and then growing quantum dot particle crystals. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot particle crystals and controls the growth of the quantum dot particle crystals so that the growth of the quantum dot particle crystals can be controlled or selected by a process that is lower in cost and easier than vapor deposition methods such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0222] The quantum dots may include: a II-VI group semiconductor compound; a III-V group semiconductor compound; a III-VI group semiconductor compound; a I-III-VI group semiconductor compound; a IV-VI group semiconductor compound; a group IV element or compound; and / or a combination thereof (e.g., any suitable combination).

[0223] Examples of II-VI group semiconductor compounds are: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS, etc.; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe, etc.; and / or combinations thereof (e.g., any suitable combination).

[0224] Examples of III-V group semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs and / or InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs and / or InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and / or InAlPSb, etc.; and / or combinations thereof (e.g., any suitable combination). In one or more embodiments, the III-V group semiconductor compounds may further include group II elements. Examples of III-V group semiconductor compounds further including group II elements may include InZnP, InGaZnP and / or InAlZnP, etc.

[0225] Examples of III-VI group semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 and / or InTe, etc.; ternary compounds such as InGaS 3 and / or InGaSe3 etc.; and / or its (e.g., any suitable) combination.

[0226] Examples of group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS 2 , AgInSe 2 , AgGaS, AgGaS 2 , AgGaSe 2 , CuInS, CuInS 2 , CuInSe 2 , CuGaS 2 , CuGaSe 2 , CuGaO 2 , AgGaO 2 and / or AgAlO 2 etc.; quaternary compounds such as AgInGaS 2 and / or AgInGaSe 2 etc.; and / or its (e.g., any suitable) combination.

[0227] Examples of group IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe etc.; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe etc.; and / or its (e.g., any suitable) combination.

[0228] Group IV elements or compounds may include: single elements such as Si and / or Ge etc.; binary compounds such as SiC and / or SiGe etc.; and / or its (e.g., any suitable) combination.

[0229] Each element included in a multi-element compound (such as a binary compound, a ternary compound, and a quaternary compound) may be present in the particles at a substantially uniform concentration or a non-uniform (substantially non-uniform) concentration. For example, the above formula refers to the type (species) of elements contained in the compound, and the element ratios in the compound may vary. For example, AgInGaS 2 refers to AgIn x Ga 1-x S 2 (0 < x < 1).

[0230] In one or more embodiments, the quantum dots may have a single structure (where the concentration of each element in the quantum dots is substantially uniform) or a core-shell dual structure. For example, the material included in the core and the material included in the shell may be different from each other.

[0231] The shell of the quantum dots may act as a protective layer to prevent chemical denaturation of the core to maintain semiconductor characteristics, and / or act as a charging layer to impart electrophoretic characteristics to the quantum dots. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient, where the concentration of the element present in the shell decreases towards the center of the core.

[0232] Examples of the shell of the quantum dots may include: oxides of metals, metalloids or non-metals; semiconductor compounds; and / or combinations thereof (e.g., any suitable combination). Examples of oxides of metals, metalloids or non-metals may include: binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO, MnO, Mn 2 O 3 、Mn 3 O 4 、CuO, FeO, Fe 2 O 3 、Fe 3 O 4 、CoO, Co 3 O 4 and / or NiO, etc.; ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and / or CoMn 2 O 4 etc.; and / or combinations thereof (e.g., any suitable combination). Examples of semiconductor compounds may include: as described above, Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; and / or combinations thereof (e.g., any suitable combination). Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb and / or combinations thereof (e.g., any suitable combination).

[0233] Each element included in a multi - element compound (such as a binary compound and a ternary compound) can be present in the particles in a substantially uniform or non - uniform (substantially non - uniform) concentration. For example, the above formula refers to the type (species) of elements contained in the compound, and the proportion of elements in the compound can vary.

[0234] The full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dots can be about 45 nm or less, for example, about 40 nm or less, for example, about 30 nm or less, and when within these ranges, the color purity or color reproducibility of the quantum dots can be improved. In one or more embodiments, since the light emitted by the quantum dots is emitted in all directions, the wide viewing angle can be improved.

[0235] In one or more embodiments, the quantum dots can be nanoparticles, nanotubes, nanowires, nanofibers, and / or nanoplates, etc., specifically in the form of spherical particles, cone particles, multi - arm particles, or cubic particles.

[0236] By controlling the size of the quantum dots (e.g., diameter or radius), the bandgap can be adjusted so that light with one or more appropriate wavelength bands can be obtained from the emission layer including the quantum dots. Accordingly, by using quantum dots of different sizes, a light - emitting device that emits light with one or more appropriate wavelength bands can be realized. For example, the size of the quantum dots or the proportion of elements in the quantum dot compound can be selected and controlled to emit red, green, and / or blue light. In one or more embodiments, the size of the quantum dots can be configured to emit white light by combining light of one or more appropriate colors.

[0237] The emission layer can be formed by applying an ink composition onto the hole - transport region and evaporating at least a part of the solvent included in the ink composition.

[0238] The ink composition can be applied by ink - jet printing, spin - coating, casting, micro - gravure coating, gravure coating, bar coating, roll coating, wire - bar coating, dip coating, spray coating, screen printing, flexographic printing, and / or offset printing, etc.

[0239] In one or more embodiments, in addition to the quantum dots, the emission layer can further include a host and a dopant. The dopant can include a phosphorescent dopant, a fluorescent dopant, and / or a combination thereof (e.g., any suitable combination).

[0240] Based on 100 parts by weight of the host, the amount of the dopant in the emission layer can be in the range of about 0.01 part by weight to about 15 parts by weight.

[0241] In one or more embodiments, the emission layer can include a delayed fluorescence material. The delayed fluorescence material can act as the host or the dopant in the emission layer.

[0242] The thickness of the emission layer can be about to about For example, about to about Within this range. When the thickness of the emission layer is within these ranges, excellent or appropriate light-emitting characteristics can be obtained without significantly increasing the driving voltage.

[0243] Host

[0244] In one or more embodiments, the host may include a compound represented by Formula 301:

[0245] Formula 301

[0246] [Ar 301 xb11 -[(L 301 ) xb1 -R 301 xb21 .

[0247] In Formula 301, Ar 301 and L 301 may each independently be an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, xb11 can be 1, 2 or 3, xb1 can be an integer selected from 0 to 5, R 301 can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, an unsubstituted or at least one R 10a substituted C 1 -C 60 alkyl group, an unsubstituted or at least one R 10a substituted C 2 -C 60 alkenyl group, an unsubstituted or at least one R 10a substituted C 2 -C 60 alkynyl group, an unsubstituted or at least one R 10a substituted C 1 -C 60 alkoxy group, an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group, an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, -Si(Q 301 )(Q 302 )(Q​​303 ), -N(Q 301 )(Q 302 ), -B(Q 301 )(Q 302 ), -C(=O)(Q 301 ), -S(=O) 2 (Q 301 ), or -P(=O)(Q 301 )(Q 302 ), xb21 can be an integer selected from 1 to 5, and Q 301 to Q 303 are each the same as described with reference to Q 11 .

[0248] For example, if (e.g., when) xb11 in Formula 301 is 2 or greater, then two or more Ars 301 can be connected to each other via a single bond.

[0249] In one or more embodiments, the subject may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, and / or a combination thereof (e.g., any suitable combination):

[0250] Formula 301-1

[0251]

[0252] Formula 301-2

[0253]

[0254] In Formula 301-1 and Formula 301-2, ring A 301 to ring A 304 can each independently be an unsubstituted or at least one R 10a -substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a -substituted C 1 -C 60 heterocyclic group, X 301 can be O, S, N[(L 304 ) xb4 -R 304 , C(R 304 )(R 305 ), or Si(R 304 )(R 305 ), xb22 and xb23 can each independently be 0, 1, or 2, L 301 , xb1, and R 301 are each the same as described herein, L 302 to L 304may be independently associated with reference L 301 is the same as that described with reference to L, xb2 to xb4 may each independently be the same as that described with reference to xb1, and R 302 to R 305 and R 311 to R 314 each is the same as that described herein with reference to R 301 .

[0255] In one or more embodiments, the host may include an alkaline earth metal complex, a post-transition metal complex, and / or a combination thereof (e.g., any suitable combination). In one or more embodiments, the host may include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, and / or a combination thereof (e.g., any suitable combination).

[0256] In one or more embodiments, the host may include at least one of compounds H1 to H128; 9,10-bis(2-naphthyl)anthracene (ADN); 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN); 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN); 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP); 1,3-bis(9-carbazolyl)benzene (mCP); 1,3,5-tris(carbazol-9-yl)benzene (TCP); and / or a combination thereof (e.g., any suitable combination):

[0257]

[0258]

[0259]

[0260]

[0261]

[0262]

[0263]

[0264] Phosphorescent dopant

[0265] The phosphorescent dopant may include at least one transition metal as the central metal.

[0266] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, and / or a combination thereof (e.g., any suitable combination).

[0267] The phosphorescent dopant may be electrically neutral.

[0268] For example, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0269] Formula 401

[0270] M(L 401 ) xc1 (L 402 ) xc2

[0271] Formula 402

[0272]

[0273] In Formulas 401 and 402, M may be a transition metal (e.g., Ir, Pt, Pd, Os, Ti, Au, Hf, Eu, Tb, Rh, Re, or Tm); L 401 may be a ligand represented by Formula 402, and xc1 may be 1, 2, or 3, where if (e.g., when) xc1 is 2 or greater, then two or more L 401 may be substantially the same as or substantially different from each other; L 402 may be an organic ligand; and xc2 may be 0, 1, 2, 3, or 4, where if (e.g., when) xc2 is 2 or greater, then two or more L 402 may be substantially the same as or substantially different from each other; X 401 and X 402 may each independently be nitrogen or carbon; Ring A 401 and Ring A 402 may each independently be a C 3 -C 60 carbocyclic group or a C 1 -C 60 heterocyclic group; T 401 may be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*', *-C(Q 411 )(Q 412 )-*', *-C(Q 411 )=C(Q 412 )-*', *-C(Q 411 )=*' or *=C=*'; X 403 and X 404 may each independently be a chemical bond (e.g., a covalent bond or a coordination bond), O, S, N(Q 413 ), B(Q 413 ), P(Q 413 ), C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ); Q 411To Q 414 Each is the same as that described with reference to Q 11 ; R 401 and R 402 can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, unsubstituted or substituted by at least one R 10a substituted C 1 -C 20 alkyl, unsubstituted or substituted by at least one R 10a substituted C 1 -C 20 alkoxy, unsubstituted or substituted by at least one R 10a substituted C 3 -C 60 carbocyclic group, unsubstituted or substituted by at least one R 10a substituted C 1 -C 60 heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 ), -N(Q 401 )(Q 402 ), -B(Q 401 )(Q 402 ), -C(=O)(Q 401 ), -S(=O) 2 (Q 401 ), or -P(=O)(Q 401 )(Q 402 ), Q 401 to Q 403 each is the same as that described with reference to Q 11 ; xc11 and xc12 can each independently be an integer selected from 0 to 10; and * and *' in Formula 402 each indicate the binding site to M in Formula 401.

[0274] For example, in Formula 402, i) X 401 can be nitrogen and X 402 can be carbon, or ii) each of X 401 and X 402 can be nitrogen.

[0275] In one or more embodiments, if (e.g., when) xc1 in Formula 401 is 2 or greater, then two rings A in two or more L 401 can optionally be connected to each other via T 401 serving as a linking group, and two rings A in two or more L 402 can optionally be connected to each other via T 401 serving as a linking group, and two rings A in two or more L 402 can optionally be connected to each other via T 403Connected to each other (see Compound PD1 to Compound PD4 and Compound PD7). T 402 and T 403 are each the same as described with reference to T 401 .

[0276] In Formula 401, L 402 may be an organic ligand. For example, L 402 may include a halogen group, a diketone group (e.g., acetylacetonate group), a carboxylic acid group (e.g., picolinate group), -C(=O), an isocyano group, a -CN group, a phosphorus-containing group (e.g., a phosphine group and / or a phosphite group, etc.) and / or a combination thereof (e.g., any suitable combination).

[0277] The phosphorescent dopant may include, for example, at least one of Compounds PD1 to PD39 and / or a combination thereof (e.g., any suitable combination):

[0278]

[0279]

[0280]

[0281] Fluorescent dopant

[0282] The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound and / or a combination thereof (e.g., any suitable combination).

[0283] For example, the fluorescent dopant may include a compound represented by Formula 501:

[0284] Formula 501

[0285]

[0286] In Formula 501, Ar 501 , L 501 to L 503 , R 501 and R 502 may each independently include an unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, xd1 to xd3 may each independently be 0, 1, 2 or 3, and xd4 may be 1, 2, 3, 4, 5 or 6.

[0287] For example, Ar in Formula 501 501A polycyclic group in which three or more monocyclic groups are fused together (e.g., anthracenyl, 1,2-benzophenanthryl, and / or pyrenyl, etc.).

[0288] For example, xd4 in Formula 501 can be 2.

[0289] For example, the fluorescent dopant and the co-dopant can each include at least one of Compounds FD1 to FD37 (e.g., any one selected from Compounds FD1 to FD37), DPVBi, DPAVBi, and / or a combination thereof (e.g., any suitable combination):

[0290]

[0291]

[0292]

[0293] Thermally activated delayed fluorescence (TADF) material

[0294] The emission layer can include a thermally activated delayed fluorescence (TADF) material.

[0295] In the present disclosure, the thermally activated delayed fluorescence (TADF) material can be selected from compounds capable of emitting thermally activated delayed fluorescence based on a thermally activated delayed fluorescence emission mechanism.

[0296] Depending on the type or kind of other materials included in the emission layer, the thermally activated delayed fluorescence (TADF) material included in the emission layer can act as a host or a dopant.

[0297] In one or more embodiments, the difference between the triplet energy level (eV) of the thermally activated delayed fluorescence (TADF) material and the singlet energy level (eV) of the thermally activated delayed fluorescence (TADF) material can be in the range of about 0 eV to about 0.5 eV. When the difference between the triplet energy level (eV) of the thermally activated delayed fluorescence (TADF) material and the singlet energy level (eV) of the thermally activated delayed fluorescence (TADF) material is within the above range, upconversion from the triplet state to the singlet state of the thermally activated delayed fluorescence (TADF) material can occur effectively, and thus, the light-emitting device 1A can have improved luminous efficiency.

[0298] For example, the thermally activated delayed fluorescence (TADF) material can include: i) a material including at least one electron donor (e.g., a π-electron-rich C 3 -C 60 cyclic group such as carbazolyl, etc.) and at least one electron acceptor (e.g., sulfinyl group, cyano group, and / or a nitrogen-containing C 1 -C 60 cyclic group lacking π electrons, etc.), and ii) a material including a C 8 -C 60 polycyclic group in which two or more cyclic groups are fused while sharing boron (B).

[0299] Examples of the delayed fluorescence material may include at least one of Compound DF1 to Compound DF14:

[0300]

[0301]

[0302] The electron transport region in the interlayer 130

[0303] The electron transport region may have: i) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a single material (e.g., consisting of a single material), ii) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a plurality of different materials (e.g., consisting of a plurality of different materials), or iii) a multi-layer structure including a plurality of layers that includes a plurality of different materials.

[0304] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, and / or a combination thereof (e.g., any suitable combination).

[0305] For example, the electron transport region may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, where the layers in each structure are stacked in sequence from the emission layer.

[0306] In one or more embodiments, the electron transport region (e.g., the buffer layer, hole blocking layer, electron control layer, or electron transport layer in the electron transport region) may include a metal-free compound that includes at least one nitrogen-containing C with a lack of π electrons 1 -C 60 ring group.

[0307] For example, the electron transport region may include a compound represented by Formula 601:

[0308] Formula 601

[0309] [Ar 601 xe11 -[(L 601 ) xe1 -R 601 xe21 .

[0310] In Formula 601, Ar 601 and L 601 may each independently be an unsubstituted or at least one R 10a substituted C 3 -C 60 ​​A carbocyclic group or an unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group; xe11 can be 1, 2 or 3; xe1 can be 0, 1, 2, 3, 4 or 5; R 601 can be unsubstituted or at least one R 10a substituted C 3 -C 60 carbocyclic group, unsubstituted or at least one R 10a substituted C 1 -C 60 heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O) 2 (Q 601 ) or -P(=O)(Q 601 )(Q 602 ); Q 601 to Q 603 are each the same as described with reference to Q 11 ; xe21 can be 1, 2, 3, 4 or 5; and Ar 601 , L 601 and R 601 in at least one of which can each independently be unsubstituted or at least one R 10a substituted π-deficient nitrogen-containing C 1 -C 60 cyclic group.

[0311] For example, if (e.g., when) xe11 in Formula 601 is 2 or greater, then two or more Ar 601 can be connected to each other by a single bond.

[0312] In one or more embodiments, Ar in Formula 601 601 can be unsubstituted or at least one R 10a substituted anthryl group.

[0313] In one or more embodiments, the electron transport region can include a compound represented by Formula 601-1:

[0314] Formula 601-1

[0315]

[0316] In Formula 601-1, X 614 can be N or C(R 614 ), X 615 can be N or C(R 615 ), and X616 can be N or C(R 616 ), where at least one of X 614 to X 616 can be N; L 611 to L 613 are each the same as described with reference to L 601 ; xe611 to xe613 are each the same as described with reference to xe1; R 611 to R 613 are each the same as described with reference to R 601 ; and R 614 to R 616 can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C 1 -C 20 alkyl, C 1 -C 20 alkoxy, unsubstituted or substituted with at least one R 10a substituted C 3 -C 60 carbocyclic group or unsubstituted or substituted with at least one R 10a substituted C 1 -C 60 heterocyclic group.

[0317] For example, xe1 and xe611 to xe613 in Formula 601 and Formula 601-1 can each independently be 0, 1, or 2.

[0318] In one or more embodiments, the electron transport region can include: at least one of Compounds ET1 to ET45; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 4,7-diphenyl-1,10-phenanthroline (Bphen); Alq 3 ; BAlq; TAZ; NTAZ; ZnMgO; and / or a combination thereof (e.g., any suitable combination):

[0319]

[0320]

[0321]

[0322] The thickness of the electron transport region can be in the range of about to about For example, about to about . When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or a combination thereof (e.g., any suitable combination), the thickness of the buffer layer, the hole blocking layer, or the electron control layer can each independently be in the range of about to about For example, about to about and the thickness of the electron transport layer can be in the range of about to about For example, about to about When the thicknesses of the buffer layer, hole blocking layer, electron control layer, electron transport layer, and / or electron transport region are within these ranges, satisfactory or appropriate electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0323] In addition to the aforementioned materials, the electron transport region (e.g., the electron transport layer in the electron transport region) can further include a metal-containing material.

[0324] The metal-containing material can include an alkali metal complex, an alkaline earth metal complex, and / or a combination thereof (e.g., any suitable combination). The metal ion of the alkali metal complex can be a Li ion, Na ion, K ion, Rb ion, or Cs ion, and the metal ion of the alkaline earth metal complex can be a Be ion, Mg ion, Ca ion, Sr ion, or Ba ion. The ligand coordinated with the metal ion of the alkali metal complex or the metal ion of the alkaline earth metal complex can include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, and / or a combination thereof (e.g., any suitable combination).

[0325] For example, the metal-containing material can include a Li complex. The Li complex can include, for example, compound ET-D1(Liq) or compound ET-D2:

[0326]

[0327] The electron transport region can include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer can be in direct contact with the second electrode 150.

[0328] The electron injection layer can have: i) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a single material (e.g., consisting of a single material), ii) a single-layer structure including a single layer (e.g., consisting of a single layer) that includes a plurality of different materials (e.g., consisting of a plurality of different materials), or iii) a multi-layer structure including a plurality of layers that includes a plurality of different materials.

[0329] In one or more embodiments, the electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, and / or a combination thereof (e.g., any suitable combination).

[0330] The alkali metal may include Li, Na, K, Rb, Cs, and / or a combination thereof (e.g., any suitable combination). The alkaline earth metal may include Mg, Ca, Sr, Ba, and / or a combination thereof (e.g., any suitable combination). The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, and / or a combination thereof (e.g., any suitable combination).

[0331] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may be oxides, halides (e.g., fluorides, chlorides, bromides, or iodides), or tellurides of the alkali metal, the alkaline earth metal, and the rare earth metal, and / or a combination thereof (e.g., any suitable combination).

[0332] The alkali metal-containing compound may include: alkali metal oxides, such as Li 2 O, Cs 2 O, and / or K 2 O, etc.; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, etc.; and / or a combination thereof (e.g., any suitable combination). The alkaline earth metal-containing compound may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. The rare earth metal-containing compound may include YbF 3 、ScF 3 、Sc 2 O 3 、Y 2 O 3 、Ce 2 O 3 、GdF 3 、TbF 3 、YbI 3 、ScI 3 、TbI 3 and / or a combination thereof (e.g., any suitable combination). In one or more embodiments, the rare earth metal-containing compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2 Te 3 、Ce 2 Te 3 、Pr 2 Te 3 、Nd 2 Te 3 、Pm 2 Te 3 、Sm 2 Te 3 、Eu 2 Te 3 、Gd 2 Te 3 、Tb 2 Te 3 、Dy 2 Te 3 、Ho 2 Te 3 、Er 2 Te 3 、Tm 2 Te 3 、Yb 2 Te 3 and / or Lu 2 Te 3 etc.

[0333] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include i) one of the ions of alkali metals, alkaline earth metals, and rare earth metals, and ii) as ligands bonded to the metal ions, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, and / or combinations thereof (e.g., any suitable combination).

[0334] In one or more embodiments, the electron injection layer may include the following (e.g., consist of): alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, and / or combinations thereof (e.g., any suitable combination) as described above. In one or more embodiments, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0335] In one or more embodiments, the electron injection layer may include the following (e.g., consist of): i) an alkali metal compound (e.g., an alkali metal halide), or ii) a) an alkali metal compound (e.g., an alkali metal halide), and b) an alkali metal, alkaline earth metal, rare earth metal, and / or a combination thereof (e.g., any suitable combination). For example, the electron injection layer may be a co-deposited layer of KI:Yb, a co-deposited layer of RbI:Yb, and / or a co-deposited layer of LiF:Yb, etc.

[0336] When the electron injection layer further includes an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal compound, alkaline earth metal compound, rare earth metal compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, and / or a combination thereof (e.g., any suitable combination) may be uniformly (e.g., substantially uniformly) or non-uniformly (e.g., substantially non-uniformly) dispersed in a matrix including the organic material.

[0337] The thickness of the electron injection layer may be in the range of about to about For example, about to about . When the thickness of the electron injection layer is within these ranges, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0338] The second electrode 150

[0339] The second electrode 150 is disposed on the sandwich layer 130 having the aforementioned structure. The second electrode 150 may be a cathode serving as an electron injection electrode, and as materials for forming the second electrode 150, metals, alloys, conductive compounds, and / or combinations thereof (e.g., any suitable combination) each having a low work function may be used.

[0340] The second electrode 150 may include Li, Ag, Mg, Al, Al-Li, Ca, Mg-In, Mg-Ag, Yb, Ag-Yb, ITO, IZO, and / or a combination thereof (e.g., any suitable combination). The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0341] The second electrode 150 may have a single-layer structure or a multi-layer structure including multiple layers.

[0342] The capping layer

[0343] The first capping layer may be disposed outside the first electrode 110, and / or the second capping layer may be disposed outside the second electrode 150. For example, the light-emitting device 1A may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are sequentially stacked in the recited order, a structure in which the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in the recited order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are sequentially stacked in the recited order.

[0344] Light generated in the emission layer of the interlayer 130 of the light-emitting device 1A may be extracted toward the outside through the first electrode 110 and the first capping layer, which serve as a semi-transmissive electrode or a transmissive electrode. Light generated in the emission layer of the interlayer 130 of the light-emitting device 1A may be extracted toward the outside through the second electrode 150 and the second capping layer, which serve as a semi-transmissive electrode or a transmissive electrode.

[0345] The first capping layer and the second capping layer may increase the external emission efficiency according to the principle of constructive interference. Accordingly, the light extraction efficiency of the light-emitting device 1A may be increased so that the light-emitting efficiency of the light-emitting device 1A may be improved.

[0346] Each of the first capping layer and the second capping layer may include a material having a refractive index of 1.6 or greater (at 589 nm).

[0347] The first capping layer and the second capping layer may each independently be a capping layer including quantum dots, an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0348] At least one of the first capping layer and the second capping layer may include a carbocyclic compound, a heterocyclic compound, an amino group-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, and / or a combination thereof (e.g., any suitable combination). The carbocyclic compound, the heterocyclic compound, and the amino group-containing compound may optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, and / or a combination thereof (e.g., any suitable combination). In one or more embodiments, at least one of the first capping layer and the second capping layer may include an amino group-containing compound.

[0349] In one or more embodiments, at least one of the first capping layer and the second capping layer may include a compound represented by Formula 201, a compound represented by Formula 202, and / or a combination thereof (e.g., any suitable combination).

[0350] In one or more embodiments, at least one of the first capping layer and the second capping layer may include: at least one of compounds HT28 to HT33; at least one of compounds CP1 to CP6; β-NPB; and / or a combination thereof (e.g., any suitable combination).

[0351]

[0352] Film

[0353] Quantum dots may be included in one or more suitable films. Accordingly, one or more embodiments of the present disclosure include a film that includes quantum dots. The film may be, for example, an optical member (or light control device) (e.g., a color filter, a color conversion member, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, a polarization layer, and / or a quantum dot-containing layer, etc.), a light-blocking member (e.g., a light reflection layer and / or a light absorption layer, etc.), and / or a protective member (e.g., an insulating layer and / or a dielectric layer, etc.).

[0354] Optical member

[0355] Quantum dots may be used in one or more suitable optical members. Accordingly, one or more embodiments of the present disclosure include an optical member that includes quantum dots.

[0356] In one or more embodiments, the optical member may be a light control device.

[0357] In one or more embodiments, the optical member may be a color filter, a color conversion member, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, or a polarization layer.

[0358] The optical member may be a color conversion member. The color conversion member may include a substrate and a pattern layer formed on the substrate.

[0359] The substrate may be a substrate constituting the color conversion member, or may be a region of a device (e.g., a display device) in which the color conversion member is located. The substrate may be glass, silicon (Si), silicon oxide (SiO x ) or a polymer substrate, and the polymer substrate may include polyethersulfone (PES) or polycarbonate (PC).

[0360] The pattern layer may include quantum dots in the form of a thin film. For example, the pattern layer may be a thin film of quantum dots.

[0361] The color conversion member including the substrate and the pattern layer may further include a partition wall or a black matrix formed between the pattern layers. In one or more embodiments, the color conversion member may further include a color filter to further improve the light conversion efficiency.

[0362] The color conversion component may include a red pattern layer capable of emitting red light, a green pattern layer capable of emitting green light, a blue pattern layer capable of emitting blue light, and / or a combination thereof (e.g., any suitable combination). The red pattern layer, the green pattern layer, and / or the blue pattern layer may be achieved by controlling the composition, constitution, and / or structure of quantum dots.

[0363] One or more embodiments of the present disclosure include an electronic device, which includes quantum dots (or an optical component including quantum dots).

[0364] The electronic device may further include a light source, and the quantum dots (or the optical component including quantum dots) may be arranged in the path of the light emitted from the light source.

[0365] The light source may emit blue light, red light, green light, or white light. For example, the light source may emit blue light. In one or more embodiments, the light emitted from the light source may be absorbed by the quantum dots.

[0366] The light source may be an organic light-emitting device (OLED) or a light-emitting diode (LED).

[0367] As described above, the light emitted from the light source may be optically converted by the quantum dots when passing through the quantum dots, such that light having a wavelength different from the wavelength of the light emitted from the light source may be emitted by the quantum dots.

[0368] For example, the quantum dots may absorb and convert the light emitted from the light source to emit light having a maximum emission wavelength in the range of about 400 nm to about 480 nm.

[0369] Electronic device

[0370] The quantum dots and the light-emitting device including the same may be included in one or more suitable electronic devices. For example, the electronic device including the quantum dots and the light-emitting device including the quantum dots may be a light-emitting device and / or an authentication device, etc.

[0371] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be arranged in at least one direction in which the light emitted from the light-emitting device travels. For example, the light emitted from the light-emitting device may be blue light or white light. Details about the light-emitting device are the same as those described herein. In one or more embodiments, the color conversion layer may include quantum dots. The quantum dots may be, for example, the aforementioned quantum dots.

[0372] The electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixel regions.

[0373] The pixel-defining film may be disposed between a plurality of sub-pixel regions to define each of the plurality of sub-pixel regions.

[0374] The color filter may further include a plurality of color filter regions and a light-shielding pattern between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern between the plurality of color conversion regions.

[0375] The plurality of color filter regions (or the plurality of color conversion regions) may include: a first region that emits first color light; a second region that emits second color light; and / or a third region that emits third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or the plurality of color conversion regions) may include quantum dots. In particular, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include (e.g., may exclude) quantum dots. Details regarding the quantum dots are the same as those described herein. Each of the first region, the second region, and the third region may further include a scatterer (e.g., scattering particles).

[0376] For example, in a light-emitting device that emits first light, the first region may absorb the first light to emit 1-1 color light, the second region may absorb the first light to emit 2-1 color light, and the third region may absorb the first light to emit 3-1 color light. Here, the 1-1 color light, the 2-1 color light, and the 3-1 color light may have different maximum emission wavelengths from each other. In particular, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 color light may be blue light.

[0377] In addition to the aforementioned light-emitting device, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein any one of the source electrode and the drain electrode may be electrically connected to any one of the first electrode and the second electrode of the light-emitting device.

[0378] The thin-film transistor may further include a gate electrode and / or a gate insulating film, etc.

[0379] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, and / or an oxide semiconductor, etc.

[0380] The electronic device may further include a sealing portion for sealing the light-emitting device. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting device. The sealing portion allows the light from the light-emitting device to be extracted to the outside, and at the same time (e.g., simultaneously) prevents ambient air and moisture from penetrating into the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin film encapsulation layer including at least one of an organic layer and an inorganic layer. When the sealing portion is a thin film encapsulation layer, the electronic device may be flexible.

[0381] In addition to the color filter and / or color conversion layer, various functional layers may be additionally disposed on the sealing portion according to the use of the electronic device. Examples of the functional layer may include a touch screen layer and / or a polarization layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual by using biometric information of a living body (e.g., fingertips and / or pupils, etc.).

[0382] In addition to the light-emitting device as described above, the authentication device may further include a biometric information collector.

[0383] The electronic device may be applied to one or more suitable displays, light sources, lighting devices, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical tools (e.g., electronic thermometers, sphygmomanometers, glucometers, pulse measurement devices, pulse wave measurement devices, electrocardiogram monitors, ultrasonic diagnostic devices, or endoscope monitors), fish finders, one or more suitable measurement tools, meters (e.g., meters for vehicles, airplanes, and ships), and / or projectors, etc.

[0384] Electronic device

[0385] Quantum dots and light-emitting devices including the same may be included in one or more suitable electronic devices.

[0386] For example, the electronic device including the light-emitting device may be at least one of a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a portable telephone, a tablet personal computer, a phablet, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a 3D display, a virtual reality display, an augmented reality display, a vehicle, a video wall having a plurality of displays spliced together, a theater screen, a stadium screen, a light therapy device, and a signboard.

[0387] The light-emitting device may have excellent or appropriate luminous efficiency and a long lifespan, and thus an electronic device including the light-emitting device may have characteristics such as high brightness, high resolution, and low power consumption.

[0388] Figure 4 description

[0389] Figure 4 FIG. 8 is a schematic perspective view of an electronic device 1 including quantum dots according to one or more embodiments of the present disclosure. As a device for displaying moving images or still images, the electronic device 1 may be a portable electronic device (such as a mobile phone, smartphone, tablet personal computer (PC), mobile communication terminal, electronic notebook computer, e-book, portable multimedia player (PMP), navigation, or ultra-mobile personal computer (UMPC)), and one or more suitable products (such as a television, laptop computer, monitor, billboard, or Internet of Things (IoT) device). The electronic device 1 may be such a product or a part thereof. In one or more embodiments, the electronic device 1 may be a wearable device, such as a smartwatch, watch phone, glasses-type or kind of display, or a head-mounted display (HMD), or a part of such a wearable device. However, the present disclosure is not limited thereto. For example, the electronic device 1 may include an instrument panel of a vehicle, a center console of a vehicle, or a center information display on the instrument panel, an in-vehicle rearview mirror display instead of a side-view mirror of a vehicle, an entertainment display arranged for a rear seat of a vehicle or arranged on the backrest of a front seat, a head-up display (HUD) mounted in front of the vehicle or projected on the front windshield, or a computer-generated holographic augmented reality head-up display (CGH AR HUD). For ease of explanation, Figure 4 illustrates a case where the electronic device 1 is a smartphone.

[0390] The electronic device 1 may include a display area DA and a non-display area NDA outside the display area DA. The display device may implement an image through a plurality of pixel arrays two-dimensionally arranged in the display area DA.

[0391] The non-display area NDA is an area that does not display an image and may completely surround (e.g., may encircle) the display area DA. In the non-display area NDA, drivers for supplying electrical signals or power to display elements arranged in the display area DA may be arranged. In the non-display area NDA, pads for electrically connecting electronic components or printed circuit boards may be arranged.

[0392] In the electronic device 1, the length in the x-axis direction and the length in the y-axis direction may be different from each other. In one or more embodiments, as Figure 4As shown, the length in the x-axis direction may be shorter than the length in the y-axis direction. In one or more embodiments, the length in the x-axis direction may be the same as the length in the y-axis direction. In one or more embodiments, the length in the x-axis direction may be longer than the length in the y-axis direction.

[0393] Figure 5 and Figures 6A to 6C description

[0394] Figure 5 is a schematic view of the exterior of a vehicle 1000 as an electronic device including quantum dots according to one or more embodiments of the present disclosure. Figures 6A to 6C Each is a schematic view of the interior of a vehicle 1000 according to an embodiment of the present disclosure.

[0395] See Figure 5 、 Figure 6A 、 Figure 6B and Figure 6C and, vehicle 1000 may refer to one or more suitable devices for moving an object to be transported (such as a person, an object or an animal) from a starting point to a destination point. Vehicle 1000 may include vehicles traveling on roads or tracks, boats moving on oceans or rivers, and / or airplanes flying in the air using the action of air, etc.

[0396] Vehicle 1000 may travel on roads or tracks. Vehicle 1000 may move in a set or predetermined direction according to the rotation of at least one wheel. For example, vehicle 1000 may include three-wheeled or four-wheeled vehicles, construction machinery, two-wheeled vehicles, prime mover devices, bicycles, and / or trains traveling on tracks.

[0397] Vehicle 1000 may include a body having an interior and an exterior, and a chassis as other parts outside the body on which mechanical equipment required for driving is installed. The exterior of the body may include a front panel, a hood, a roof panel, a rear panel, a trunk, and / or pillars provided at the boundaries between doors, etc. The chassis of vehicle 1000 may include a power generation device, a power transmission device, a driving device, a steering device, a braking device, a suspension device, a transmission device, a fuel device, and / or front, rear, left and right wheels, etc.

[0398] Vehicle 1000 may include side window glass 1100, front window glass 1200, side mirrors 1300, instrument panel 1400, center console 1500, passenger seat instrument panel 1600, and display device 2.

[0399] The side window glass 1100 and the front window glass 1200 may be divided by pillars arranged between the side window glass 1100 and the front window glass 1200.

[0400] The side window glass 1100 can be installed on the side of the vehicle 1000. In one or more embodiments, the side window glass 1100 can be installed on the door of the vehicle 1000. A plurality of side window glasses 1100 can be provided and can face each other. In one or more embodiments, the side window glass 1100 can include a first side window glass 1110 and a second side window glass 1120. In one or more embodiments, the first side window glass 1110 can be arranged adjacent to the instrument panel 1400. The second side window glass 1120 can be arranged adjacent to the passenger seat instrument panel 1600.

[0401] In one or more embodiments, the side window glasses 1100 can be separated from and / or spaced apart (e.g., spaced or separated) from each other in the x-axis direction or the direction opposite to the x-axis direction. For example, the first side window glass 1110 and the second side window glass 1120 can be separated from and / or spaced apart (e.g., spaced or separated) from each other in the x-axis direction or the direction opposite to the x-axis direction. For example, the imaginary straight line L connecting the side window glasses 1100 can extend in the x-axis direction or the direction opposite to the x-axis direction. For example, the imaginary straight line L connecting the first side window glass 1110 and the second side window glass 1120 to each other can extend in the x-axis direction or the direction opposite to the x-axis direction.

[0402] The front window glass 1200 can be installed in the front of the vehicle 1000. The front window glass 1200 can be arranged between the side window glasses 1100 that face each other.

[0403] The side mirror 1300 can provide a rear view of the vehicle 1000. The side mirror 1300 can be installed on the exterior of the vehicle body. In one or more embodiments, a plurality of side mirrors 1300 can be provided. Any one of the plurality of side mirrors 1300 can be arranged outside the first side window glass 1110. Another one of the plurality of side mirrors 1300 can be arranged outside the second side window glass 1120.

[0404] The instrument panel 1400 can be arranged in front of the steering wheel. The instrument panel 1400 can include a tachometer, a speedometer, a coolant temperature gauge, an oil gauge, a turn indicator, a high beam indicator, a warning light, a seat belt warning light, an odometer, a speedometer, an automatic shift selector indicator, a door open warning light, an engine oil warning light, and / or a low fuel warning light.

[0405] The center console 1500 can include a control panel on which a plurality of buttons for adjusting an audio device, an air conditioning device, and / or a seat heater are arranged. The center console 1500 can be arranged on one side of the instrument panel 1400.

[0406] The passenger seat instrument panel 1600 can be separated from and / or spaced apart (e.g., at an interval or separately) from the instrument panel 1400, and the center console 1500 is disposed between the passenger seat instrument panel 1600 and the instrument panel 1400. In one or more embodiments, the instrument panel 1400 can be arranged corresponding to the driver's seat, and the passenger seat instrument panel 1600 can be arranged corresponding to the passenger seat. In one or more embodiments, the instrument panel 1400 can be adjacent to the first side window glass 1110, and the passenger seat instrument panel 1600 can be adjacent to the second side window glass 1120.

[0407] In one or more embodiments, the display device 2 can include a display panel 3, and the display panel 3 can display an image. The display device 2 can be disposed inside the vehicle 1000. In one or more embodiments, the display device 2 can be disposed between the side window glasses 1100 facing each other. The display device 2 can be disposed on at least one of the instrument panel 1400, the center console 1500, and / or the passenger seat instrument panel 1600.

[0408] The display device 2 can include an organic light emitting display device, an inorganic electroluminescent display device, and / or a quantum dot display device, etc. Hereinafter, as the display device 2 according to one or more embodiments, an organic light emitting display device including the aforementioned light emitting device will be described as an example, but one or more appropriate types (kinds) of the aforementioned display devices can be used in the embodiments.

[0409] See Figure 6A , the display device 2 can be disposed on the center console 1500. In one or more embodiments, the display device 2 can display navigation information. In one or more embodiments, the display device 2 can display audio, video, and / or information about vehicle settings.

[0410] See Figure 6B , the display device 2 can be disposed on the instrument panel 1400. When the display device 2 is disposed on the instrument panel 1400, the instrument panel 1400 can display driving information, etc. through the display device 2. For example, the instrument panel 1400 can be digitized. The instrument panel 1400 can digitally display vehicle information and driving information as an image. For example, the pointer and instrument of the tachometer and one or more appropriate warning light icons can be displayed through digital signals.

[0411] See Figure 6C, the display device 2 can be arranged on the passenger seat dashboard 1600. The display device 2 can be embedded in the passenger seat dashboard 1600 or arranged on the passenger seat dashboard 1600. In one or more embodiments, the display device 2 arranged on the passenger seat dashboard 1600 can display an image related to the information displayed on the dashboard 1400 and / or the information displayed on the center console 1500. In one or more embodiments, the display device 2 arranged on the passenger seat dashboard 1600 can display information different from the information displayed on the dashboard 1400 and / or the information displayed on the center console 1500.

[0412] Manufacturing method

[0413] The layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region can be formed in a specific region by using one or more suitable methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and / or laser-induced thermal imaging, etc.).

[0414] When forming the layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region by vacuum deposition, depending on the material to be included in the layer to be formed and the structure of the layer to be formed, the deposition can be carried out at a deposition temperature in the range of about 100 °C to about 500 °C, a vacuum degree in the range of about 10 -8 Torr to about 10 -3 Torr, and a deposition rate in the range of about (angstroms per second) to about .

[0415] Definition of terms

[0416] As used herein, the term "C 3 -C 60 carbocyclic group" refers to a cyclic group that includes only carbon atoms (e.g., composed of carbon atoms) as ring-forming atoms and has 3 to 60 carbon atoms. For example, C 3 -C 50 carbocyclic group, C 3 -C 40 carbocyclic group, C 3 -C 30 carbocyclic group, C 3 -C 20 carbocyclic group, or C 3 -C 10 carbocyclic group, and as used herein, the term "C 1 -C 60 heterocyclic group" refers to a cyclic group that has 1 to 60 carbon atoms and further has heteroatoms as ring-forming atoms in addition to carbon atoms. For example, C 1 -C 50 heterocyclic group, C1 -C 40 Heterocyclic group, C 1 -C 30 Heterocyclic group, C 1 -C 20 Heterocyclic group or C 1 -C 10 Heterocyclic group. C 3 -C 60 Carbocyclic group and C 1 -C 60 The heterocyclic groups may each be: a monocyclic group including one ring (e.g., consisting of one ring); or a polycyclic group in which two or more rings are fused to each other. For example, C 1 -C 60 The number of ring-forming atoms of the heterocyclic group may be from 3 to 61.

[0417] As used herein, the term "cyclic group" may include C 3 -C 60 Carbocyclic group and C 1 -C 60 Both heterocyclic groups.

[0418] As used herein, the term "π - electron rich C 3 -C 60 cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as a ring-forming moiety, and as used herein, the term "π - electron deficient nitrogen-containing C 1 -C 60 cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as a ring-forming moiety.

[0419] For example, C 3 -C 60 The carbocyclic group may be i) group T1 or ii) a fused-ring group in which two or more groups T1 are fused to each other (e.g., cyclopentadienyl, adamantyl, norbornyl, phenyl, pentaphenylenyl, naphthyl, azulyl, indacenyl, acenaphthylenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, triphenylenyl, pyrenyl, 1,2 - benzophenanthrenyl, perylenyl, pentaphenyl, heptaphenylenyl, tetracenyl, picenyl, hexacenyl, pentacenyl, rubicenyl, coronenyl, ovalenyl, indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenoanthracenyl or indenoanthracenyl).

[0420] C 1 -C 60The heterocyclic group may be i) group T2, ii) a fused ring group in which at least two groups T2 are fused to each other, or iii) a fused ring group in which at least one group T2 and at least one group T1 are fused to each other (e.g., pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthylindolyl, isoindolyl, benzisoindolyl, naphthylisoindolyl, benzosilolyl, benzothienyl, benzofuryl, carbazolyl, dibenzosilolyl, dibenzothienyl, dibenzofuryl, indolocarbazolyl, indolocarbazolyl, benzofurocarbazolyl, benzothienocarbazolyl, benzosilolocarbazolyl, benzindolocarbazolyl, benzocarbazolyl, benzonaphthofuryl, benzonaphthothienyl, benzonaphthosilolyl, benzofurodibenzofuryl, benzofurodibenzothienyl, benzothienodibenzothienyl, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafuryl, azadibenzosilolyl, azadibenzothienyl, and / or azadibenzofuryl, etc.).

[0421] π - electron - rich C 3 -C 60 The cyclic group may be i) group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a fused ring group in which at least one group T3 and at least one group T1 are fused to each other (e.g., C 3 -C 60 carbocyclic group, 1H - pyrrolyl, silolyl, borole, 2H - pyrrolyl, 3H - pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthylindolyl, isoindolyl, benzisoindolyl, naphthylisoindolyl, benzosilolyl, benzothienyl, benzofuryl, carbazolyl, dibenzosilolyl, dibenzothienyl, dibenzofuryl, indolocarbazolyl, indolocarbazolyl, benzofurocarbazolyl, benzothienocarbazolyl, benzosilolocarbazolyl, benzindolocarbazolyl, benzocarbazolyl, benzonaphthofuryl, benzonaphthothienyl, benzonaphthosilolyl, benzofurodibenzofuryl, benzofurodibenzothienyl, and / or benzothienodibenzothienyl, etc.).

[0422] π - electron - deficient nitrogen - containing C 1-C 60 The cyclic group can be i) group T4, ii) a fused-ring group in which at least two groups T4 are fused to each other, iii) a fused-ring group in which at least one group T4 and at least one group T1 are fused to each other, iv) a fused-ring group in which at least one group T4 and at least one group T3 are fused to each other, or v) a fused-ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused to each other (for example, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorene, azadibenzosilolyl, azadibenzothiophenyl and / or azadibenzofuranyl, etc.).

[0423] Group T1 can be cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), norbornenyl, bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.2]octyl or phenyl.

[0424] Group T2 can be furyl, thienyl, 1H-pyrrolyl, silolyl, borolyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azasilolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, tetrazinyl, pyrrolidinyl, imidazolidinyl, dihydropyrrolyl, piperidinyl, tetrahydropyridyl, dihydropyridyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyridazinyl or dihydropyridazinyl.

[0425] Group T3 can be furyl, thienyl, 1H-pyrrolyl, silolyl or borolyl.

[0426] Group T4 can include 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azasilolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl or tetrazinyl.

[0427] As used herein, the terms "cyclic group", "C 3 -C 60 carbocyclic group", "C 1 -C 60 heterocyclic group", "π - electron - rich C 3 -C 60 cyclic group", or "nitrogen - containing π - electron - deficient C 1 -C 60 cyclic group" refer to a monovalent or polyvalent group (e.g., divalent, trivalent, or tetravalent group, etc.) that is fused (e.g., joined together) to a cyclic group according to the structure of the formula in which the corresponding term is used. For example, "phenyl" can be benzyl, phenyl, and / or phenylene, etc., and those skilled in the art can easily understand these groups according to the structure of the formula including "phenyl".

[0428] Examples of monovalent C 3 -C 60 carbocyclic group and monovalent C 1 -C 60 heterocyclic group are C 3 -C 10 cycloalkyl, C 1 -C 10 heterocycloalkyl, C 3 -C 10 cycloalkenyl, C 1 -C 10 heterocycloalkenyl, C 6 -C 60 aryl, C 1 -C 60 heteroaryl, monovalent non - aromatic fused polycyclic group, and monovalent non - aromatic fused heteropolycyclic group, and divalent C 3 -C 60 carbocyclic group and divalent C 1 -C 60 heterocyclic group examples may include C 3 -C 10 subcycloalkyl, C 1 -C 10 subheterocycloalkyl, C 3 -C 10 subcycloalkenyl, C 1 -C 10 subheterocycloalkenyl, C 6 -C 60 subaryl, C 1 -C 60 subheteroaryl, divalent non - aromatic fused polycyclic group, and / or divalent non - aromatic fused heteropolycyclic group.

[0429] As used herein, the term "C 1 -C60 "Alkyl" refers to a straight-chain or branched-chain aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms. For example, C 1 -C 50 alkyl, C 1 -C 30 alkyl, C 1 -C 20 alkyl or C 1 -C 10 alkyl, and specific examples thereof may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and / or tert-decyl. As used herein, the term "C 1 -C 60 alkylene" refers to a divalent group having the same structure as C 1 -C 60 alkyl.

[0430] As used herein, the term "C 2 -C 60 alkenyl" refers to a monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the end of C 2 -C 60 alkyl. For example, C 2 -C 30 alkenyl, C 2 -C 20 alkenyl or C 2 -C 10 alkenyl, and examples thereof may include vinyl, propenyl, and butenyl. As used herein, the term "C 2 -C 60 alkenylene" refers to a divalent group having the same structure as C 2 -C 60 alkenyl.

[0431] As used herein, the term "C 2 -C 60 alkynyl" refers to a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the middle or at the end of C 2 -C 60 alkyl. For example, C 2 -C 30 alkynyl, C 2 -C 20 alkynyl or C 2 -C 10 alkynyl, and examples thereof may include ethynyl and propynyl. As used herein, the term "C2 -C 60 "Arylidyne" refers to a divalent group having the same structure as -C 2 -C 60 alkynyl group.

[0432] As used herein, the term "-C 1 -C 60 alkoxy" refers to a monovalent group represented by -OA 101 (where A 101 is -C 1 -C 60 alkyl), for example, -C 1 -C 30 alkoxy, -C 1 -C 20 alkoxy or -C 1 -C 10 alkoxy, and examples thereof may include methoxy, ethoxy, and / or isopropoxy, etc.

[0433] As used herein, the term "-C 3 -C 10 cycloalkyl" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples thereof may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl, etc. As used herein, the term "-C 3 -C 10 subcycloalkyl" refers to a divalent group having the same structure as -C 3 -C 10 cycloalkyl.

[0434] As used herein, the term "-C 1 -C 10 heterocycloalkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms, and specific examples thereof may include 1,2,3,4-oxadiazolyl, tetrahydrofuryl, and tetrahydrothienyl, etc. As used herein, the term "-C 1 -C 10 subheterocycloalkyl" refers to a divalent group having the same structure as -C 1 -C 10 heterocycloalkyl.

[0435] As used herein, the term "-C 3 -C 10"Cycloalkenyl" refers to a monovalent cyclic group having 3 to 10 carbon atoms, having at least one carbon-carbon double bond in its ring, and having no aromaticity, and specific examples thereof may include cyclopentenyl, cyclohexenyl, cycloheptenyl, etc. As used herein, the term "C 3 -C 10 "Subcycloalkenyl" refers to a divalent group having the same structure as C 3 -C 10 cycloalkenyl.

[0436] As used herein, the term "C 1 -C 10 "Heterocycloalkenyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms, and having at least one double bond in its ring structure. C 1 -C 10 Examples of heterocycloalkenyl may include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuryl, 2,3-dihydrothienyl, etc. As used herein, the term "C 1 -C 10 "Subheterocycloalkenyl" refers to a divalent group having the same structure as C 1 -C 10 heterocycloalkenyl.

[0437] As used herein, the term "C 6 -C 60 "Aryl" refers to a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. For example, C 6 -C 50 aryl, C 6 -C 40 aryl, C 6 -C 30 aryl, C 6 -C 20 aryl or C 6 -C 15 aryl, and as used herein, the term "C 6 -C 60 "Subaryl" refers to a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. C 6 -C 60 Examples of aryl may include phenyl, pentacenyl, naphthyl, azulyl, indacenyl, acenaphthylenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, triphenylenyl, pyrenyl, 1,2-benzophenanthryl, perylenyl, pentaphenyl, heptacenyl, tetracenyl, picenyl, hexaphenyl, pentaphenyl, rubicenyl, coronenyl, ovalenyl, etc. When C 6 -C 60 aryl and C 6 -C 60When each arylene group includes two or more rings, these rings may be fused to each other.

[0438] As used herein, the term "C 1 -C 60 heteroaryl" refers to a monovalent group of a heteroaromatic system having 1 to 60 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. For example, C 1 -C 50 heteroaryl, C 1 -C 40 heteroaryl, C 1 -C 30 heteroaryl, C 1 -C 20 heteroaryl or C 1 -C 10 heteroaryl. As used herein, the term "C 1 -C 60 heteroarylene" refers to a divalent group of a heteroaromatic system having 1 to 60 carbon atoms that further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. Examples of C 1 -C 60 heteroaryl may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzoquinolinyl, isoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, and naphthyridinyl, etc. When C 1 -C 60 heteroaryl and C 1 -C 60 heteroarylene each include two or more rings, these rings may be fused to each other.

[0439] As used herein, the term "monovalent non-aromatic fused polycyclic group" refers to a monovalent group having two or more rings fused to each other, with only carbon atoms as ring-forming atoms and no aromaticity in the entire molecular structure (e.g., having 8 to 60 carbon atoms). For example, C 8 -C 60 monovalent non-aromatic fused polycyclic group, C 8 -C 50 monovalent non-aromatic fused polycyclic group, C 8 -C 40 monovalent non-aromatic fused polycyclic group, C 8 -C 30 monovalent non-aromatic fused polycyclic group or C 8 -C 20Monovalent non-aromatic fused polycyclic group. Examples of the monovalent non-aromatic fused polycyclic group may include indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenoanthracenyl, indenoacenaphthylenyl, etc. As used herein, the term "divalent non-aromatic fused polycyclic group" refers to a divalent group having the same structure as the above-mentioned monovalent non-aromatic fused polycyclic group.

[0440] As used herein, the term "monovalent non-aromatic fused heteropolycyclic group" refers to a monovalent group having two or more rings fused to each other, further including at least one heteroatom as a ring-forming atom in addition to carbon atoms, and having non-aromaticity in its entire molecular structure (e.g., having 1 to 60 carbon atoms), for example, C 1 -C 60 monovalent non-aromatic fused heteropolycyclic group, C 1 -C 50 monovalent non-aromatic fused heteropolycyclic group, C 1 -C 40 monovalent non-aromatic fused heteropolycyclic group, C 1 -C 30 monovalent non-aromatic fused heteropolycyclic group or C 1 -C 20 monovalent non-aromatic fused heteropolycyclic group. Examples of the monovalent non-aromatic fused heteropolycyclic group may include pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthylindolyl, isoindolyl, benzisoindolyl, naphthylisoindolyl, benzosilolyl, benzothienyl, benzofuryl, carbazolyl, dibenzosilolyl, dibenzothienyl, dibenzofuryl, azacarbazolyl, azafuryl, azadibenzosilolyl, azadibenzothienyl, azadibenzofuryl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzothiazolyl, benzoxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indenocarbazolyl, indolocarbazolyl, benzofurocarbazolyl, benzothienocarbazolyl, benzosilolocarbazolyl, benzindolocarbazolyl, benzocarbazolyl, benzonaphthofuryl, benzonaphthothienyl, benzonaphthosilolyl, benzofurodibenzofuryl, benzofurodibenzothienyl, and benzothienodibenzothienyl. As used herein, the term "divalent non-aromatic fused heteropolycyclic group" refers to a divalent group having the same structure as the monovalent non-aromatic fused heteropolycyclic group.

[0441] As used herein, the term "C 6 -C 60 aryloxy" indicates -OA 102 (where A 102 is C 6 -C60 aryl), e.g., C 6 -C 50 aryloxy, C 6 -C 40 aryloxy, C 6 -C 30 aryloxy, C 6 -C 20 aryloxy or C 6 -C 15 aryloxy, and as used herein the term "C 6 -C 60 arylthio" denotes -SA 103 (where A 103 is C 6 -C 60 aryl), e.g., C 6 -C 50 arylthio, C 6 -C 40 arylthio, C 6 -C 30 arylthio, C 6 -C 20 arylthio or C 6 -C 15 arylthio.

[0442] As used herein the term "C 7 -C 60 aralkyl" means -A 104 A 105 (where A 104 is C 1 -C 54 alkylene, and A 105 is C 6 -C 59 aryl), e.g., C 7 -C 50 aralkyl, C 7 -C 40 aralkyl, C 7 -C 30 aralkyl, C 7 -C 20 aralkyl or C 7 -C 15 aralkyl, and as used herein the term "C 2 -C 60 heteroaralkyl" means -A 106 A 107 (where A 106 is C 1 -C 59 alkylene, and A 107 is C 1 -C59 heteroaryl), e.g., C 2 -C 50 heteroalkyl, C 2 -C 40 heteroalkyl, C 2 -C 30 heteroalkyl, C 2 -C 20 heteroalkyl or C 2 -C 15 heteroalkyl.

[0443] As used herein, the term "R 10a " may be: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro; C 1 -C 60 alkyl, C 2 -C 60 alkenyl, C 2 -C 60 alkynyl or C 1 -C 60 alkoxy: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 carbocyclic group, C 1 -C 60 heterocyclic group, C 6 -C 60 aryloxy, C 6 -C 60 arylthio, C 7 -C 60 aralkyl, C 2 -C 60 heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) and / or its (e.g., any suitable) combination; C 3 -C 60 carbocyclic group, C 1 -C 60 heterocyclic group, C 6 -C 60 aryloxy, C 6 -C60 Arylthio group, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroarylalkyl: deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C 1 -C 60 Alkyl group, C 2 -C 60 Alkenyl group, C 2 -C 60 Alkynyl group, C 1 -C 60 Alkoxy group, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy group, C 6 -C 60 Arylthio group, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) and / or its (e.g., any suitable) combination; or -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0444] In the specification, Q 11 to Q 13 、Q 21 to Q 23 and Q 31 to Q33 Each may independently be: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxy; cyano; nitro; C 1 -C 60 alkyl; C 2 -C 60 alkenyl; C 2 -C 60 alkynyl; C 1 -C 60 alkoxy; each unsubstituted or substituted by deuterium, -F, cyano, C 1 -C 60 alkyl, C 1 -C 60 alkoxy, phenyl, biphenyl and / or its (e.g., any suitable) combination-substituted C 3 -C 60 carbocyclic group or C 1 -C 60 heterocyclic group; C 7 -C 60 aralkyl; or C 2 -C 60 heteroaralkyl.

[0445] As used herein, the term "heteroatom" refers to any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se and / or its (e.g., any suitable) combination.

[0446] As used herein, the term "transition metal" includes Hf, Ta, W, Re, Os, Ir, Pt and / or Au, etc.

[0447] In the specification, "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, "tert-Bu" or "Bu t " refers to tert-butyl, and "OMe" refers to methoxy.

[0448] As used herein, the term "biphenyl" refers to "phenyl substituted by phenyl". For example, "biphenyl" may be a substituted phenyl having C 6 -C 60 aryl as a substituent.

[0449] As used herein, the term "terphenyl" refers to "phenyl substituted by biphenyl". For example, "terphenyl" may be a substituted phenyl having a C 6 -C 60 aryl-substituted C 6 -C 60 aryl as a substituent.

[0450] Unless otherwise defined, each of * and *' as used herein refers to the binding site to the adjacent atom in the corresponding formula or moiety.

[0451] In the specification, the x-axis, y-axis, and z-axis are not limited to the three axes in an orthogonal coordinate system and can be interpreted broadly to include these axes. For example, the x-axis, y-axis, and z-axis can refer to those axes that are orthogonal to each other, or can refer to those axes in different directions that are not orthogonal to each other.

[0452] Hereinafter, compounds according to one or more embodiments and light-emitting devices according to one or more embodiments will be described in more detail with reference to the following synthesis examples and examples. The phrase "using B in place of A" used in describing the synthesis examples means using B in place of A with substantially the same molar equivalent.

[0453] Synthesis Examples

[0454] Synthesis Example 1 (Synthesis of Quantum Dot 1)

[0455] Synthesis of the Core

[0456] Zinc acetate (5 mmol), oleic acid (15 mmol), and trioctylamine (20 mL) were added to a 100 mL three-necked flask, and the mixed solution was placed under vacuum at 120 °C for 1 hour. After converting the atmosphere in the reactor to N 2 After that, 0.8 mL of 1 M trioctylphosphine-selenide and 0.3 mL of DPP (diphenylphosphine) were added thereto at 340 °C. After the reaction temperature was lowered to 300 °C, 0.8 mL of 2 M cadmium oleate was added thereto to allow the reaction to proceed for 1 hour. After the reaction solution was cooled to room temperature, the resulting reaction solution was rinsed twice with ethanol to obtain the core.

[0457] Synthesis of the Shell

[0458] The synthesized core, zinc acetate (20 mmol), oleic acid (60 mmol), and trioctylamine (50 mL) were added to a three-necked flask, and the mixed solution was placed under vacuum at 120 °C for 1 hour. After converting the atmosphere in the reactor to N 2 After that, 20 mL of a solution (in which 1 M trioctylphosphine-selenide and trioctylphosphine-sulfide were mixed at a volume ratio of 3:7) was added thereto at 300 °C. After allowing the reaction to proceed for 1 hour, the reaction solution was cooled to room temperature. The resulting reaction solution was rinsed twice with ethanol to obtain the final quantum dot.

[0459] Synthesis Example 2 (Synthesis of Quantum Dot 2)

[0460] All processes for synthesizing quantum dots (e.g., the core of the quantum dots) are carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 1 (e.g., respectively), except that 6 mmol of zinc acetate and 18 mmol of oleic acid are used. And, all processes for synthesizing quantum dots (e.g., the shell of the quantum dots) are carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 1 (e.g., respectively), except that the reaction time allowed is changed from 1 hour to 50 minutes.

[0461] Synthesis Example 3 (Synthesis of Quantum Dot 3)

[0462] All processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 1, except that 6.5 mmol of zinc acetate and 19.5 mmol of oleic acid are used. And, all processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 1, except that the reaction time allowed is changed from 1 hour to 45 minutes.

[0463] Synthesis Example 4 (Synthesis of Quantum Dot 4)

[0464] All processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 1, except that 7.0 mmol of zinc acetate and 21 mmol of oleic acid are used. And, all processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 1, except that the reaction time allowed is changed from 1 hour to 45 minutes.

[0465] Synthesis Example 5 (Synthesis of Quantum Dot 5)

[0466] All processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 1, except that 7.5 mmol of zinc acetate and 22.5 mmol of oleic acid are used. And, all processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 1, except that the reaction time allowed is changed from 1 hour to 40 minutes.

[0467] Synthesis Example 6 (Synthesis of Quantum Dot 6)

[0468] All processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 1, except that 8 mmol of zinc acetate and 24 mmol of oleic acid are used. And, all processes for synthesizing quantum dots are carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 1, except that the reaction time allowed is changed from 1 hour to 30 minutes.

[0469] Synthesis Comparative Example 1 (Comparative Quantum Dot 1)

[0470] Synthesis of the core

[0471] Zinc acetate (3 mmol), oleic acid (9 mmol), and trioctylamine (20 mL) were added to a 100 mL three-necked flask, and the mixed solution was placed under vacuum at 120 °C for 1 hour. After converting the atmosphere in the reactor to N 2 2, 0.8 mL of 1 M trioctylphosphine-selenide and 0.2 mL of DPP (diphenylphosphine) were added thereto at 340 °C. After the reaction temperature was lowered to 300 °C, 0.4 mL of 2 M cadmium oleate was added thereto to allow the reaction to proceed for 1 hour therein. After the reaction solution was cooled to room temperature, the resulting reaction solution was rinsed twice with ethanol to obtain the core.

[0472] Synthesis of the shell

[0473] The synthesized core, zinc acetate (2 mmol), oleic acid (6 mmol), and trioctylamine (5 mL) were added to a three-necked flask, and the mixed solution was placed under vacuum at 120 °C for 1 hour. After converting the atmosphere in the reactor to N 2 2, 2 mL of a solution in which 1 M trioctylphosphine-selenide and trioctylphosphine-sulfide were mixed at a volume ratio of 3:7 was added thereto at 300 °C. After allowing the reaction to proceed for 1 hour, the reaction solution was cooled to room temperature. The resulting reaction solution was rinsed twice with ethanol to obtain the final quantum dots.

[0474] Synthesis Comparative Example 2 (Comparative Quantum Dot 2)

[0475] All processes for synthesizing the quantum dots were carried out in substantially the same manner as in the synthesis of the core according to Synthesis Comparative Example 1, except that 0.2 mL of 2 M cadmium oleate was used. And, all processes for synthesizing the quantum dots were carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Comparative Example 1.

[0476] Synthesis Comparative Example 3 (Comparative Quantum Dot 3)

[0477] All processes for synthesizing the quantum dots were carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 3, except that 1.6 mL of 2 M cadmium oleate was used. And, all processes for synthesizing the quantum dots were carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Comparative Example 1, except that zinc acetate (5 mmol) and oleic acid (15 mmol) were used.

[0478] Synthesis Comparative Example 4 (Comparative Quantum Dot 4)

[0479] All processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 3. And, all processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 3, except that cadmium acetate (3 mmol) and oleic acid (9 mmol) were additionally used instead of 6.5 mmol of zinc acetate and 19.5 mmol of oleic acid, and only 20 mL of 1M trioctylphosphine-sulfide solution was used without mixing trioctylphosphine-selenide solution.

[0480] Synthesis Comparative Example 5 (Comparative Quantum Dot 5)

[0481] All processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the core according to Synthesis Example 3. And, all processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Example 3, except that only 20 mL of 1M trioctylphosphine-sulfide solution was used without mixing trioctylphosphine-selenide solution.

[0482] Synthesis Comparative Example 6 (Comparative Quantum Dot 6)

[0483] All processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the core according to Synthesis Comparative Example 1. And, all processes for synthesizing quantum dots were carried out in substantially the same manner as in the synthesis of the shell according to Synthesis Comparative Example 1.

[0484] Examples

[0485] Example 1

[0486] As the anode, the ITO substrate was cut into a size of 50 mm × 50 mm × 0.5 mm, ultrasonically treated with acetone, isopropyl alcohol, and pure water for 15 minutes each, and then cleaned by exposure to ultraviolet light and ozone for 30 minutes. Then, the ITO substrate was provided to a vacuum deposition apparatus.

[0487] Poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS) was deposited / (by spin coating) on the ITO substrate to form a hole injection layer with a thickness, and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4′-(N-(4-sec-butyl)phenyl)diphenylamine)] (TFB) was vacuum deposited / (by spin coating) on the hole injection layer to form a hole transport layer with a thickness.

[0488] A composition in which Quantum Dot 1 of Synthesis Example 1 was mixed with octane (i.e., n-octane) was applied / (by spin coating) to the hole transport layer to form a thin film, and the thin film was sequentially subjected to 10 -3The vapor compression distillation (VCD) process under dragging and the baking process at 140 °C for 10 minutes were carried out to form an emission layer. Then, the emission layer was spin-coated with ZnMgO to form an electron transport layer having a thickness of. Aluminum (Al) was deposited on the electron transport layer to form a cathode having a thickness of, thus completing the fabrication of the light-emitting device.

[0489] Examples 2 to 6 and Comparative Examples 1 to 6

[0490] Light-emitting devices were each fabricated in substantially the same manner as in Example 1, except that the quantum dots listed in Table 1 were used instead of Quantum Dot 1 and the solvents listed in Table 1 were used instead of octane.

[0491] Table 1

[0492]

[0493]

[0494] Evaluation Example 1

[0495] For the light-emitting devices of Examples 1 to 6 and Comparative Examples 1 to 6, the photoluminescence quantum yield (PLQY), external quantum efficiency (E.Q.E), and lifetime depending on brightness were measured by using measuring instruments such as a Keithley SMU 236 and a luminance meter PR650, and the results are shown in Table 2. The lifetime depending on brightness was measured as T 90 , where T 90 represents the time required for the brightness to reach 90% of the initial brightness.

[0496] Table 2

[0497]

[0498]

[0499] Referring to Table 2, it was confirmed that the light-emitting devices of Examples 1 to 6 had excellent or appropriate PLQY, E.Q.E, and lifetime compared to the light-emitting devices of Comparative Examples 1 to 3.

[0500] For example, when the light-emitting device of Example 3 was compared with the light-emitting devices of Comparative Examples 4 and 5 including the same core particles, it was confirmed that the light-emitting device of Example 3 having the shell structure of the embodiment of the present disclosure had excellent or appropriate lifetime characteristics compared to the light-emitting devices of Comparative Examples 4 and 5.

[0501] Further, when comparing the light-emitting device of Example 3 having particles with the same core and shell with the light-emitting device of Comparative Example 2, it was confirmed that the light-emitting device of Example 3 that satisfied the radius range of the core of the embodiment of the present disclosure achieved excellent or appropriate characteristics in terms of PLQY, E.Q.E, and lifetime, a narrow FWHM, and excellent or appropriate blue light emission.

[0502] Further, when comparing the light-emitting device of Example 3 that satisfied the radius range of the core of the embodiment of the present disclosure with the light-emitting device of Comparative Example 3, it was confirmed that the light-emitting device of Example 3 that satisfied the Cd amount of the embodiment of the present disclosure achieved excellent or appropriate characteristics in terms of PLQY, E.Q.E, and lifetime, a narrow FWHM, and excellent or appropriate blue light emission.

[0503] Further, when comparing the light-emitting device of Example 6 manufactured by using a composition including a solvent having a high boiling point and quantum dots with the light-emitting device of Comparative Example 6, it was confirmed that the light-emitting device of Example 6 that satisfied the core particles and the radius range of the core of the embodiment of the present disclosure achieved excellent or appropriate characteristics in terms of PLQY, E.Q.E, and lifetime compared with the light-emitting device of Comparative Example 6. For example, since the exchange of Cd cations caused by Cu impurities in the solvent having a high boiling point was suppressed or reduced in the quantum dots of the embodiment of the present disclosure, it was confirmed that the light-emitting device of the embodiment of the present disclosure maintained excellent or appropriate characteristics without deteriorating the light-emitting efficiency and lifetime characteristics.

[0504] According to one or more embodiments, the quantum dots have excellent or appropriate light-emitting efficiency and long lifetime characteristics, and thus the use of such quantum dots can provide high-quality optical members, electronic devices, and / or electronic apparatuses.

[0505] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the meaning in the relevant art and / or the context of this specification, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0506] Furthermore, the use of "may" when describing the embodiments of the present disclosure refers to "one or more embodiments of the present disclosure".

[0507] As used herein, the terms "substantially", "about" and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent variations of measured or calculated values that would be recognized by a person of ordinary skill in the art. As used herein, "substantially" encompasses the recited value and means within an acceptable variation of the particular value as determined by a person of ordinary skill in the art in view of the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "substantially" may mean within one or more standard deviations of the recited value, or within ±30%, ±20%, ±10% or ±5% of the recited value.

[0508] Also, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges between and including the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit recited herein is intended to include all lower numerical limits subsumed therein and any minimum numerical limit recited in this specification is intended to include all higher numerical limits subsumed therein. Accordingly, the applicant reserves the right to modify this specification (including the claims) to expressly recite any sub-ranges subsumed within the ranges expressly recited herein.

[0509] The light-emitting device, electronic device or any other related device or component according to an embodiment of the present disclosure described herein may be implemented using any suitable hardware, firmware (e.g., application specific integrated circuit), software, or any combination of software, firmware and hardware. For example, the various components of the device may be formed on one integrated circuit (IC) chip or on separate IC chips. Further, the various components of the device may be implemented on a flexible printed circuit film, tape carrier package (TCP) or printed circuit board (PCB), or formed on a substrate. Further, the various components of the device may be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, which may be implemented using standard memory devices in a computing device, such as, for example, random access memory (RAM). The computer program instructions may also be stored in other non-transitory computer-readable media, such as, for example, a CD ROM or a flash drive, etc. Moreover, those skilled in the art should recognize that, without departing from the scope of the embodiments of the present disclosure, the functions of various computing devices may be combined or integrated into a single computing device, or the functions of a dedicated computing device may be distributed over one or more other computing devices.

[0510] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of each feature or aspect in an embodiment is generally to be considered applicable to other similar features or aspects in one or more other embodiments. Although embodiments of the present disclosure have been described, it should be understood that the present disclosure should not be limited to these embodiments, but that one or more suitable changes and modifications can be made by those of ordinary skill in the art within the spirit and scope of the present disclosure as defined by the appended claims and their equivalents.

Claims

1. A quantum dot, comprising: a core comprising a first semiconductor compound represented by Formula 1; as well as A first shell, which surrounds the core and includes A 1 , The radius of the core of the quantum dot is 5 nm or greater: Formula 1 Cd x AM 1 1-x B 1 Among them, in formula 1, A 1 Including Group II elements except Cd, B 1 Includes Group VI elements, and x is greater than 0 and less than or equal to 0.

12.

2. The quantum dot according to claim 1, wherein x is in the range of 0.07 to 0.

11.

3. The quantum dot according to claim 1, wherein A 1 Includes Zn, Mg, Ca, Hg or any combination thereof.

4. The quantum dot according to claim 1, wherein The first shell further comprises B 2 and B 3 ,and B 2 and B 3 Each independently includes Group VI elements.

5. The quantum dot according to claim 4, wherein B 1 , B 2 and B 3 Each independently includes O, S, Se, Te or any combination thereof.

6. The quantum dot according to claim 4, wherein B 1 and B 2 The same as each other. 7 . The quantum dot of claim 1 , wherein the core and the first shell each comprise a Group II-VI semiconductor compound.

8. The quantum dots of claim 7, wherein the Group II-VI semiconductor compounds comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

9. The quantum dot of claim 1, wherein the first shell comprises a second semiconductor compound represented by Formula 2: Formula 2 A 1 B 2 y B 3 1-y in, In formula 2, A 1 It is a Group II element. B 2 and B 3 are each independently a Group VI element, and y is greater than 0 but less than 1.

10. The quantum dot of claim 1, wherein the thickness of the first shell is in the range of 1 nm to 5 nm. The quantum dots according to claim 1 , wherein the maximum emission wavelength of the quantum dots is in the range of 410 nm to 480 nm. 12 . An ink composition comprising the quantum dots according to claim 1 and a solvent.

13. The ink composition according to claim 12, wherein the boiling point of the solvent is 120°C or higher.

14. The ink composition according to claim 12, wherein the solvent is a single solvent or a mixed solvent of at least two solvents.

15. An optical member comprising the quantum dots according to any one of claims 1 to 11.

16. An electronic device comprising the quantum dots according to any one of claims 1 to 11.

17. The electronic device according to claim 16, further comprising: light source; as well as a color conversion member located in a path of light emitted from the light source, wherein the color conversion member comprises the quantum dots.

18. The electronic device according to claim 16, further comprising: A light emitting device comprising: a first electrode; a second electrode facing the first electrode; and an interlayer disposed between the first electrode and the second electrode and comprising an emission layer, The light emitting device comprises the quantum dots.

19. An electronic device comprising the quantum dots according to any one of claims 1 to 11.

20. The electronic device of claim 19, wherein the electronic device is at least one of a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a retractable display, a laser printer, a telephone, a portable telephone, a tablet personal computer, a tablet mobile computer, a personal digital assistant, a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a three-dimensional display, a virtual reality display, an augmented reality display, a vehicle, a video wall with multiple displays stitched together, a theater screen, a stadium screen, a light therapy device, and a sign.

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