IGBT thermal stress life analysis method and device, electronic equipment and vehicle

Abstract

The invention relates to an IGBT thermal stress life analysis method and device, electronic equipment and a vehicle, and relates to the technical field of computers. The method comprises the following steps: based on temperature change data of an IGBT under an actual working condition and a simulation working condition, determining a cycle simulation frequency of the IGBT under the simulation working condition; the simulated thermal stress damage corresponding to the cycle simulation times of the IGBT under the simulation working condition is equivalent to the thermal stress damage of the IGBT under the actual working condition; and determining the thermal stress life of the IGBT based on the cycle simulation times. Therefore, the accuracy of the thermal stress service life of the IGBT can be improved, the test period of the thermal stress service life of the IGBT is shortened, and the resource cost for analyzing the thermal stress service life of the IGBT is reduced.

Description

Technical Field

[0001] This application relates to the field of computer technology, especially to the field of new energy electric drive system test technology, and specifically to a method, device, electronic device and vehicle for analyzing the thermal stress life of an insulated gate bipolar transistor (IGBT). Background Art

[0002] As a core component of the electric drive system of new energy vehicles, the performance indicators of IGBTs need to meet the user's usage requirements. Among them, the reliability of IGBTs during the designed service life is a key concern. After being frequently subjected to current shocks, the power loss inside the IGBTs increases sharply. The power loss is converted into heat, causing the temperature of the IGBTs to rise. Due to the different thermal expansion coefficients of the materials of IGBTs, temperature changes will cause thermal stress inside the IGBTs. Thus, thermal stress damage occurs to the IGBTs when they are frequently subjected to current shocks. Currently, thermal stress damage is the most common failure mode of IGBTs.

[0003] In related technologies, the power loss is determined through the load current and chip junction temperature of the IGBT, and the junction temperature of the IGBT is calculated through a finite element model and the power loss to determine the thermal stress. Based on the fatigue damage model and thermal stress, the fatigue life of the IGBT is predicted. In another related technology, based on the electrical parameters of the circuit where the IGBT is located, a circuit diagram is built in simulation software, and according to the loss parameters and thermal model of the IGBT, the junction temperature waveform of the IGBT is simulated. The number of cycle failure periods of the IGBT in each random test is calculated, and the life of the IGBT is obtained by multiplying the number of cycle failure periods by the thermal cycle period, and the thermal cycle period is obtained from the junction temperature curve of the IGBT. Both of these methods simulate the loss parameters and thermal model of the IGBT module through simulation experiments to determine the thermal stress life of the IGBT. However, compared with the real road conditions, the thermal stress damage suffered by the IGBT is quite different, resulting in inaccurate thermal stress life of the IGBT. Therefore, how to improve the accuracy of the thermal stress life of the IGBT is a technical problem that needs to be solved urgently at present. Summary of the Invention

[0004] This application provides a method, device, electronic device and vehicle for analyzing the thermal stress life of an IGBT to at least solve the technical problem of inaccurate thermal stress life of the IGBT in related technologies. The technical solution of this application is as follows:

[0005] According to a first aspect of the present application, a method for analyzing the thermal stress life of an IGBT is provided. The method includes: determining the number of cyclic simulations of the IGBT under a simulation condition based on temperature change data of the IGBT under an actual condition and the simulation condition; the simulated thermal stress damage corresponding to the number of cyclic simulations of the IGBT under the simulation condition is equivalent to the thermal stress damage of the IGBT under the actual condition; determining the thermal stress life of the IGBT based on the number of cyclic simulations.

[0006] According to the above technical means, by using the temperature change data of the IGBT under the actual condition and the simulation condition, the number of cyclic simulations of the IGBT under the simulation condition equivalent to the thermal stress damage of the IGBT under the real condition is determined, so as to simulate the thermal stress damage of the IGBT under the actual condition under the simulation condition, improving the accuracy of the thermal stress life of the IGBT. And the test effect equivalent to the actual condition is achieved under the simulation condition, shortening the test cycle of the thermal stress life analysis of the IGBT and reducing the test resource cost.

[0007] In a possible implementation manner, the temperature change data of the IGBT under the actual condition includes: a plurality of temperature change values and the quantity of each temperature change value; the temperature change data of the IGBT under the simulation condition includes: a simulated temperature difference; determining the number of cyclic simulations of the IGBT under the simulation condition based on the temperature change data of the IGBT under the actual condition and the simulation condition includes: determining the number of cyclic simulations of the IGBT under the simulation condition based on the plurality of temperature change values, the simulated temperature difference, and the quantity of each temperature change value.

[0008] According to the above technical means, the number of cyclic simulations of the simulated temperature difference can achieve thermal stress damage equivalent to the quantity of the plurality of temperature change values, thereby realizing a thermal stress endurance test of the IGBT equivalent to the actual condition under the simulation condition and improving the accuracy of the thermal stress life of the IGBT.

[0009] In another possible implementation manner, determining the number of cyclic simulations of the IGBT under the simulation condition based on the plurality of temperature change values, the simulated temperature difference, and the quantity of each temperature change value includes: determining an acceleration coefficient corresponding to each temperature change value under the simulation condition based on the plurality of temperature change values and the simulated temperature difference; the acceleration coefficient is used to characterize the acceleration degree of the thermal stress damage of the IGBT under the simulation condition relative to the thermal stress damage of the IGBT under the actual condition; determining the number of cyclic simulations of the IGBT under the simulation condition based on the acceleration coefficient corresponding to each temperature change value and the quantity of each temperature change value.

[0010] According to the above technical means, the acceleration multiple of the thermal stress damage of the IGBT under the simulation working condition relative to the thermal stress damage under the actual working condition is determined through the acceleration coefficient. Thus, the equivalent cyclic simulation times of the thermal stress damage under the actual working condition can be determined through the acceleration coefficient, shortening the cycle of the IGBT thermal stress test under the simulation working condition and reducing the test resource cost.

[0011] In another possible implementation manner, based on multiple temperature change values and the simulation temperature difference, the acceleration coefficient corresponding to each temperature change value under the simulation working condition is determined, including: for each temperature change value, inputting each temperature change value, the simulation temperature difference, and the attribute information of the IGBT into the Coffin-Manson model to calculate the acceleration coefficient corresponding to each temperature change value under the simulation working condition; the attribute information is used to characterize the sensitivity of the IGBT material to the thermal stress damage caused by temperature change.

[0012] According to the above technical means, through the Coffin-Manson model, the acceleration coefficient of the simulation temperature difference equivalent to multiple temperature change values is determined, so as to determine the cyclic simulation times based on the acceleration coefficient, improving the accuracy of the acceleration coefficient.

[0013] In another possible implementation manner, based on the acceleration coefficient corresponding to each temperature change value and the number of each temperature change value, the cyclic simulation times of the IGBT under the simulation working condition are determined, including: for each temperature change value, multiplying the acceleration coefficient corresponding to each temperature change value by the number of each temperature change value to obtain the converted times corresponding to each temperature change value; the thermal stress damage corresponding to the converted times of the IGBT under the simulation working condition is equivalent to the thermal stress damage corresponding to the number of temperature change values of the IGBT under the actual working condition; accumulating the converted times corresponding to multiple temperature change values to obtain the cyclic simulation times of the IGBT under the simulation working condition.

[0014] According to the above technical means, the cyclic simulation times are determined through the acceleration coefficient and the number of each temperature change value, making the thermal stress damage corresponding to the cyclic simulation times of the IGBT under the simulation working condition equivalent to the thermal stress damage of the IGBT under the actual working condition and improving the accuracy of the cyclic simulation times.

[0015] In another possible implementation manner, based on the temperature change data of the IGBT under the actual working condition and the simulation working condition, the cyclic simulation times of the IGBT under the simulation working condition are determined, including: based on the junction temperature data of the IGBT under the actual working condition, determining the temperature change data of the IGBT under the actual working condition; conducting a bench test on the IGBT under the simulation working condition to determine the temperature change data of the IGBT under the simulation working condition; based on the temperature change data of the IGBT under the actual working condition and the simulation working condition, determining the cyclic simulation times of the IGBT under the simulation working condition.

[0016] According to the above technical means, the temperature change data of the IGBT under actual working conditions is statistically analyzed based on the IGBT junction temperature data, and the temperature change data of the IGBT under simulated working conditions is determined through a simulation bench test, so as to more accurately determine the number of cycle simulations based on the temperature change data of the IGBT under actual and simulated working conditions, and improve the accuracy of the number of cycle simulations.

[0017] In another possible implementation manner, determining the temperature change data of the IGBT under actual working conditions based on the junction temperature data of the IGBT under actual working conditions includes: performing raindrop counting analysis on the junction temperature data of the IGBT under actual working conditions to obtain the temperature change data of the IGBT under actual working conditions.

[0018] According to the above technical means, the temperature change data of the IGBT under actual working conditions is obtained through raindrop counting analysis, so that the temperature change data of the IGBT under actual working conditions can accurately reflect the thermal stress damage of the IGBT under actual working conditions, in order to more accurately determine the number of cycle simulations.

[0019] In another possible implementation manner, the method further includes: determining a first number of cycles and a second number of cycles; the first number of cycles is the number of cycle simulations when the IGBT has a thermal stress failure under simulated working conditions; the second number of cycles is the number of cycle simulations corresponding to the temperature change data before the IGBT has a thermal stress failure under actual working conditions; based on the first number of cycles and the second number of cycles, calculating the error of the thermal stress life of the IGBT.

[0020] According to the above technical means, the error of the number of cycle simulations is determined through the first number of cycles and the second number of cycles, so as to more accurately evaluate the thermal stress life of the IGBT and improve the reliability of the IGBT.

[0021] In another possible implementation manner, the error is the ratio of the difference between the second number of cycles and the first number of cycles to the first number of cycles.

[0022] According to the above technical means, the difference in the thermal stress life of the IGBT is measured and normalized through the second number of cycles and the first number of cycles, and the error can more intuitively reflect the deviation degree of the thermal stress life of the IGBT.

[0023] According to the second aspect provided by the present application, there is provided an IGBT thermal stress life analysis device, which includes a determination module. The determination module is used to determine the number of cycle simulations of the IGBT under simulated working conditions based on the temperature change data of the IGBT under actual and simulated working conditions; the simulated thermal stress damage corresponding to the number of cycle simulations of the IGBT under simulated working conditions is equivalent to the thermal stress damage of the IGBT under actual working conditions; the determination module is further used to determine the thermal stress life of the IGBT based on the number of cycle simulations.

[0024] In a possible implementation, the temperature change data of the IGBT under actual working conditions includes: a plurality of temperature change values and the quantity of each temperature change value; the temperature change data of the IGBT under simulation working conditions includes: a simulation temperature difference; a determination module, specifically configured to determine the cyclic simulation times of the IGBT under simulation working conditions based on the plurality of temperature change values, the simulation temperature difference, and the quantity of each temperature change value.

[0025] In another possible implementation, the determination module is specifically configured to determine an acceleration coefficient corresponding to each temperature change value under simulation working conditions based on the plurality of temperature change values and the simulation temperature difference; the acceleration coefficient is used to characterize the acceleration degree of the thermal stress damage of the IGBT under simulation working conditions relative to the thermal stress damage of the IGBT under actual working conditions; and determine the cyclic simulation times of the IGBT under simulation working conditions based on the acceleration coefficient corresponding to each temperature change value and the quantity of each temperature change value.

[0026] In yet another possible implementation, the determination module is specifically configured to input each temperature change value, the simulation temperature difference, and the attribute information of the IGBT into the Coffin-Manson model for each temperature change value, and calculate the acceleration coefficient corresponding to each temperature change value under simulation working conditions; the attribute information is used to characterize the sensitivity of the material of the IGBT to the thermal stress damage caused by temperature change.

[0027] In yet another possible implementation, the determination module is specifically configured to multiply the acceleration coefficient corresponding to each temperature change value by the quantity of each temperature change value for each temperature change value to obtain a converted number corresponding to each temperature change value; the thermal stress damage corresponding to the converted number of times of the IGBT under simulation working conditions is equivalent to the thermal stress damage corresponding to the quantity of temperature change values of the IGBT under actual working conditions; and accumulate the converted numbers corresponding to the plurality of temperature change values to obtain the cyclic simulation times of the IGBT under simulation working conditions.

[0028] In yet another possible implementation, the determination module is specifically configured to determine the temperature change data of the IGBT under actual working conditions based on the junction temperature data of the IGBT under actual working conditions; conduct a bench test on the IGBT under simulation working conditions to determine the temperature change data of the IGBT under simulation working conditions; and determine the cyclic simulation times of the IGBT under simulation working conditions based on the temperature change data of the IGBT under actual and simulation working conditions.

[0029] In yet another possible implementation, the determination module is specifically configured to perform rain-on-leaves counting analysis on the junction temperature data of the IGBT under actual working conditions to obtain the temperature change data of the IGBT under actual working conditions.

[0030] In yet another possible implementation, the device further includes: a calculation module. The determination module is further configured to determine a first cycle number and a second cycle number; the first cycle number is the cycle simulation number when the IGBT undergoes thermal stress failure under the simulation working condition; the second cycle number is the cycle simulation number corresponding to the temperature change data before the IGBT undergoes thermal stress failure under the actual working condition; the calculation module is further configured to calculate the error of the thermal stress life of the IGBT based on the first cycle number and the second cycle number.

[0031] In yet another possible implementation, the error is the ratio of the difference between the second cycle number and the first cycle number to the first cycle number.

[0032] According to the third aspect provided by the present application, there is provided an electronic device, including: a processor; a memory for storing instructions executable by the processor; wherein, the processor is configured to execute the instructions to implement the method according to the first aspect and any one of its possible implementations.

[0033] According to the fourth aspect provided by the present application, there is provided a vehicle, including the IGBT thermal stress life analysis device according to any one of the possible implementations of the second aspect above, or the electronic device described in the third aspect above.

[0034] According to the fifth aspect provided by the present application, there is provided a computer-readable storage medium, when the instructions in the computer-readable storage medium are executed by the processor of the electronic device, enabling the electronic device to execute the method according to the first aspect and any one of its possible implementations.

[0035] According to the sixth aspect provided by the present application, there is provided a computer program product, the computer program product includes computer instructions, when the computer instructions run on the electronic device, enabling the electronic device to execute the method according to the first aspect and any one of its possible implementations.

[0036] Therefore, the above technical features of the present application have the following beneficial effects:

[0037] (1) By using the temperature change data of the IGBT under the actual working condition and the simulation working condition, the cycle simulation number of the IGBT under the simulation working condition equivalent to the thermal stress damage of the IGBT under the real working condition is determined, so as to simulate the thermal stress damage of the IGBT under the actual working condition under the simulation working condition, improving the accuracy of the thermal stress life of the IGBT. And an experimental effect equivalent to the actual working condition is achieved under the simulation working condition, improving the experimental cycle of the thermal stress life analysis of the IGBT and reducing the experimental resource cost.

[0038] (2) The number of cycle simulations of the simulated temperature difference can achieve a thermal stress damage equivalent to the number of multiple temperature change values, thereby realizing an IGBT thermal stress durability test equivalent to the actual working condition under the simulated working condition and improving the accuracy of the IGBT thermal stress life.

[0039] (3) The acceleration multiple of the thermal stress damage of the IGBT under the simulated working condition relative to the thermal stress damage under the actual working condition is determined through the acceleration coefficient, so that the number of cycle simulations equivalent to the thermal stress damage under the actual working condition can be determined through the acceleration coefficient, shortening the cycle of the IGBT thermal stress test under the simulated working condition and reducing the test resource cost.

[0040] (4) Through the Coffin-Manson model, the acceleration coefficient of the simulated temperature difference equivalent to multiple temperature change values is determined, so as to determine the number of cycle simulations based on the acceleration coefficient, improving the accuracy of the acceleration coefficient.

[0041] (5) The number of cycle simulations is determined through the acceleration coefficient and the number of each temperature change value, so that the thermal stress damage corresponding to the number of cycle simulations of the IGBT under the simulated working condition is equivalent to the thermal stress damage of the IGBT under the actual working condition, improving the accuracy of the number of cycle simulations.

[0042] (6) The temperature change data of the IGBT under the actual working condition is statistically analyzed through the IGBT junction temperature data, and the temperature change data of the IGBT under the simulated working condition is determined through the simulation bench test, so as to more accurately determine the number of cycle simulations based on the temperature change data of the IGBT under the actual working condition and the simulated working condition, improving the accuracy of the number of cycle simulations.

[0043] (7) The temperature change data of the IGBT under the actual working condition is analyzed through rainflow counting, so that the temperature change data of the IGBT under the actual working condition can accurately reflect the thermal stress damage of the IGBT under the actual working condition, so as to more accurately determine the number of cycle simulations.

[0044] (8) The error of the number of cycle simulations is determined through the first number of cycles and the second number of cycles, so as to more accurately evaluate the thermal stress life of the IGBT and improve the reliability of the IGBT.

[0045] (9) The difference in the thermal stress life of the IGBT is measured by normalizing the second number of cycles and the first number of cycles, and the error can more intuitively reflect the deviation degree of the IGBT thermal stress life.

[0046] It should be noted that the technical effects brought by any implementation manner in the second aspect to the sixth aspect can refer to the technical effects brought by the corresponding implementation manner in the first aspect, which will not be elaborated here.

[0047] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and do not limit the present application. Brief Description of the Drawings

[0048] The drawings herein are incorporated into and constitute a part of this specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application, and do not constitute an undue limitation on the present application.

[0049] Figure 1 is a schematic diagram of a test bench for a simulation working condition shown according to an exemplary embodiment;

[0050] Figure 2 is a flowchart of a method for IGBT thermal stress life analysis shown according to an exemplary embodiment;

[0051] Figure 3 is a flowchart of another method for IGBT thermal stress life analysis shown according to an exemplary embodiment;

[0052] Figure 4 is a flowchart of yet another method for IGBT thermal stress life analysis shown according to an exemplary embodiment;

[0053] Figure 5 is a schematic diagram of IGBT junction temperature data shown according to an exemplary embodiment;

[0054] Figure 6 is a bench cycle working condition diagram of a simulation working condition shown according to an exemplary embodiment;

[0055] Figure 7 is a flowchart of yet another method for IGBT thermal stress life analysis shown according to an exemplary embodiment;

[0056] Figure 8 is a schematic diagram of an IGBT thermal stress failure mode shown according to an exemplary embodiment;

[0057] Figure 9 is a block diagram of an IGBT thermal stress life analysis device shown according to an exemplary embodiment;

[0058] Figure 10 is a block diagram of an electronic device shown according to an exemplary embodiment. Detailed Description of the Embodiments

[0059] In order to enable those of ordinary skill in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings.

[0060] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of this application are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described here can be implemented in an order other than those illustrated or described here. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are only examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0061] As a core component of the electric drive system of new energy vehicles, the performance indicators of IGBT need to meet the user's usage requirements. Among them, the reliability of IGBT during the designed service life is the key concern. After IGBT is frequently subjected to current shocks, the power loss inside it increases sharply. The power loss will be converted into heat, causing the temperature of IGBT to rise. Since the materials of IGBT have different coefficients of thermal expansion, the change in temperature will cause thermal stress to be generated inside IGBT. Thus, thermal stress damage occurs to IGBT when it is frequently subjected to current shocks. At present, thermal stress damage is the most common failure mode of IGBT. In the related art, the analysis of the influence of thermal stress on the damage and life of the electronic control has not been carried out. Therefore, how to improve the accuracy of the thermal stress life of IGBT is a technical problem to be solved urgently at present.

[0062] In response to the above problems, this application proposes a method for analyzing the thermal stress life of IGBT. In this method, by using the temperature change data of IGBT under actual working conditions and simulation working conditions, the cyclic simulation times of IGBT under the simulation working conditions equivalent to the thermal stress damage of IGBT under the real working conditions are determined, so as to simulate the thermal stress damage of IGBT under actual working conditions under the simulation working conditions, improving the accuracy of the thermal stress life of IGBT. And the test effect equivalent to the actual working conditions is achieved under the simulation working conditions, improving the test cycle of the thermal stress life analysis of IGBT and reducing the test resource cost.

[0063] For the convenience of understanding, the method for analyzing the thermal stress life of IGBT provided by this application will be specifically introduced below in conjunction with the drawings.

[0064] Figure 1 is a schematic diagram of a test bench for a simulation working condition shown according to an exemplary embodiment, as Figure 1As shown in the figure, the bench for the simulation working condition includes: a cooling system 101, a battery simulator 102, an upper bench position 103, a rapid temperature change chamber 104, an electric drive controller 105, a low-voltage DC power supply system 106, a three-phase AC inductive load 107, a DC load 108 of a direct current to direct current converter (DCDC), and an AC load 109 of a direct current to alternating current converter (DCAC).

[0065] Among them, there is low-voltage communication between the cooling system 101 and the upper bench position 103. There is a cooling loop between the cooling system 101 and the electric drive controller 105. There is low-voltage communication between the battery simulator 102 and the upper bench position 103. The battery simulator 102 supplies high-voltage power to the electric drive controller 105. There is low-voltage communication between the upper bench position 103 and the rapid temperature change chamber 104, the electric drive controller 105, the DCDC DC load 108, and the DCAC AC load 109 respectively. The electric drive controller 105 supplies high-voltage power to the three-phase AC inductive load 107 and the DCAC AC load 109. The electric drive controller 105 also supplies low-voltage power to the low-voltage DC power supply system 106 and the DCDC DC load 108.

[0066] In some embodiments, an IGBT cyclic durability test is carried out on the bench for the simulation working condition. The water temperature in the rapid temperature change chamber 104 is set to 60 °C, the flow rate is 10 L / min, the voltage of the electromagnetic simulator is set to 650 V, and based on the number of cyclic simulations, a cyclic durability test is carried out under the IGBT simulation working condition to verify the thermal stress life when the IGBT fails due to thermal stress.

[0067] In some embodiments, an input-stage insulated gate structure similar to a Metal-Oxide-Semiconductor Field-Effect Transistor (MOS) is integrated in the IGBT. By applying a voltage to the gate, an electric field is formed to control the conduction and cutoff of the channel in the semiconductor.

[0068] It should be noted that the system architecture and application scenarios described in the embodiments of this application are for more clearly explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. Those of ordinary skill in the art know that with the evolution of the system architecture and the emergence of new business scenarios, the technical solutions provided by the embodiments of this application are equally applicable to similar technical problems.

[0069] In some embodiments, the execution subject of the IGBT thermal stress life analysis method provided by the embodiments of the present application may be the IGBT chip itself, the chip controller, the IGBT thermal stress life analysis device, the electric drive controller, the vehicle controller, or any electronic device or device equipped with the IGBT thermal stress life analysis device. The embodiments of the present application do not limit this.

[0070] Figure 2 is a flowchart of an IGBT thermal stress life analysis method shown according to an exemplary embodiment, as Figure 2 shown, the IGBT thermal stress life analysis method includes the following steps:

[0071] S201. Based on the temperature change data of the IGBT under actual working conditions and simulation conditions, determine the number of cyclic simulations of the IGBT under simulation conditions.

[0072] Among them, the simulation thermal stress damage corresponding to the number of cyclic simulations of the IGBT under simulation conditions is equivalent to the thermal stress damage of the IGBT under actual working conditions. The temperature change data of the IGBT under actual working conditions includes: a plurality of temperature change values and the number of each temperature change value. The temperature change data of the IGBT under simulation conditions includes: the simulation temperature difference.

[0073] In some embodiments, based on the plurality of temperature change values of the IGBT under actual working conditions and the number of each temperature change value, and the simulation temperature difference of the IGBT under simulation conditions, the simulation thermal stress damage of the IGBT under simulation conditions can be made equivalent to the thermal stress damage of the IGBT under actual working conditions, so as to determine the number of cyclic simulations of the IGBT under simulation conditions.

[0074] S202. Based on the number of cyclic simulations, determine the thermal stress life of the IGBT.

[0075] In some embodiments, the thermal stress life prediction model corresponding to the IGBT can be selected according to the material characteristics, packaging structure, and application scenario of the IGBT. Substitute the simulation temperature difference of the temperature change cycle into the thermal stress life prediction model of the IGBT to calculate the life loss corresponding to the temperature change cycle. Thus, for each temperature cycle under simulation conditions, determine the life loss of the IGBT caused by the temperature change according to the temperature change characteristics of the IGBT during the cycle. Accumulate the life losses corresponding to all the number of cyclic simulations to determine the thermal stress life of the IGBT.

[0076] It should be understood that based on the temperature change data of the IGBT under actual working conditions and simulation conditions, the number of cyclic simulations of the IGBT under the simulation conditions equivalent to the thermal stress damage of the IGBT under the actual working conditions is determined, so as to simulate the thermal stress damage of the IGBT under the actual working conditions under the simulation conditions, improving the accuracy of the thermal stress life of the IGBT. And under the simulation conditions, a thermal stress endurance test of the IGBT equivalent to the actual working conditions is realized, improving the test cycle of the thermal stress life analysis of the IGBT and reducing the test resource cost.

[0077] In some embodiments, as Figure 3 shown, the above step S201 can be specifically implemented as the following steps S301 - S302:

[0078] S301. Based on multiple temperature change values and the simulation temperature difference, determine the acceleration coefficient corresponding to each temperature change value under the simulation conditions.

[0079] Among them, the acceleration coefficient is used to characterize the acceleration degree of the thermal stress damage of the IGBT under the simulation conditions relative to the thermal stress damage of the IGBT under the actual working conditions.

[0080] In some embodiments, for each temperature change value among multiple temperature change values, the temperature change value, the simulation temperature difference, and the attribute information of the IGBT can be input into the Coffin - Manson model to calculate the acceleration coefficient corresponding to the temperature change value under the simulation conditions. Among them, the attribute information is used to characterize the sensitivity of the material of the IGBT to the thermal stress damage caused by temperature changes.

[0081] Exemplarily, the temperature change value, the simulation temperature difference, and the attribute information of the IGBT can be input into the expression (1) of the Coffin - Manson model to calculate the acceleration coefficient corresponding to the temperature change value under the simulation conditions:

[0082]

[0083] Among them, A CM represents the acceleration coefficient corresponding to the temperature change value under the simulation conditions. ΔT Test represents the temperature change value. ΔT Field represents the simulation temperature difference. C represents the attribute information of the IGBT.

[0084] It should be noted that through the Coffin - Manson model, the temperature change of the IGBT under the actual working conditions to ΔT Field is converted into the number of cycles equivalent to the simulation temperature difference ΔT Test under the simulation conditions. The attribute information C of the IGBT takes C = 2.5 in the embodiments of the present application to calculate the acceleration coefficient A CM, the value of the attribute information C of the IGBT is related to the attributes of the IGBT and the material characteristics of the IGBT, and the embodiments of the present application do not limit this.

[0085] S302. Determine the number of cyclic simulations of the IGBT under the simulation working condition based on the acceleration coefficient corresponding to each temperature change value and the number of each temperature change value.

[0086] In some embodiments, for each temperature change value, multiply the acceleration coefficient corresponding to each temperature change value by the number of each temperature change value to obtain the converted number of times corresponding to each temperature change value. Then, accumulate the converted numbers of times corresponding to multiple temperature change values to obtain the number of cyclic simulations of the IGBT under the simulation working condition. Among them, the thermal stress damage corresponding to the converted number of times of the IGBT under the simulation working condition is equivalent to the thermal stress damage corresponding to the number of temperature change values of the IGBT under the actual working condition.

[0087] It should be understood that through the Coffin-Manson model, the acceleration coefficient of the thermal stress damage of the IGBT under the simulation working condition relative to the thermal stress damage under the actual working condition is determined. Thus, the number of cyclic simulations equivalent to the thermal stress damage under the actual working condition can be determined through the acceleration coefficient, which improves the accuracy of the acceleration coefficient, shortens the cycle of the IGBT thermal stress test under the simulation working condition, and reduces the test resource cost.

[0088] As an example, the process of determining the number of cyclic simulations of the IGBT under the simulation working condition based on multiple temperature change values, the simulation temperature difference, and the number of each temperature change value is shown in Table 1.

[0089] Table 1

[0090]

[0091] As shown in Table 1, the multiple temperature change values include: 3.333, 9.999, 16.665, 23.331, 29.997, 36.663, 43.329, 49.995, 56.661, 63.327. The quantity of each temperature change value is as shown in Table 1. The cumulative quantity of each temperature change value is: 3.333 appears 302 times, 9.999 appears 45 times, 16.665 appears 31 times, 23.331 appears 29 times, 29.997 appears 7 times, 36.663 appears 30 times, 43.329 appears 55 times, 49.995 appears 48 times, 56.661 appears 7 times, 63.327 appears 21 times. The acceleration coefficient is determined through the above expression (1), and the converted number of times for each temperature change value is calculated as: 3.333 is converted to 0.1497 times, 9.999 is converted to 0.347023 times, 16.665 is converted to 0.857294 times, 23.331 is converted to 1.988154 times, 29.997 is converted to 0.841487 times, 36.663 is converted to 5.955883 times, 43.329 is converted to 16.57923 times, 49.995 is converted to 20.69248 times, 56.661 is converted to 4.126326 times, 63.327 is converted to 16.34732 times. The converted number of times of the multiple temperature change values is accumulated to obtain the cycle simulation number of 68 times. Among them, the simulation temperature difference takes ΔT Field = 70 °C to calculate the cycle simulation number.

[0092] In some other embodiments, as Figure 4 shown, the above step S201 can be specifically implemented as the following steps S2011 - S2013:

[0093] S2011. Based on the junction temperature data of the IGBT under actual working conditions, determine the temperature change data of the IGBT under actual working conditions.

[0094] Among them, the junction temperature data refers to the temperature of the PN junction inside the IGBT chip. The junction temperature data is one of the key indicators of the IGBT working state. Excessive junction temperature will cause an increase in the on-resistance of the IGBT and a slowdown in the switching speed, resulting in device failure.

[0095] In some embodiments, the rain - drop counting analysis can be performed on the junction temperature data of the IGBT under actual working conditions, and the temperature change data of the IGBT under actual working conditions can be obtained through the multiple temperature change values and the quantity of each temperature change value in the junction temperature data.

[0096] Exemplarily, IGBT junction temperature data can be collected and extracted from user endurance tests. According to the preset rainflow analysis theory, rainflow counting analysis is performed on the extracted IGBT junction temperature data to obtain all IGBT temperature change distribution spectra in user endurance tests. Among them, the user endurance test is the actual working condition, and the temperature change distribution spectrum is the temperature change data.

[0097] As an example, Figure 5 is a schematic diagram of IGBT junction temperature data shown according to an exemplary embodiment. As Figure 5 shown, the vertical axis represents the temperature T of the IGBT, with the unit of °C, and the horizontal axis represents the time t, with the unit of s. The temperature of the IGBT fluctuates continuously with time. Therefore, through rainflow counting analysis, multiple temperature change values of the IGBT under actual working conditions and the number of each temperature change value can be obtained. Among them, the temperature change value is the change amplitude of the IGBT temperature when the curve in the figure changes. For example, when the temperature of the IGBT drops from 100 °C to 70 °C, the temperature change value is 30 °C. The number of temperature change values is the number of times this temperature change value appears in the IGBT junction temperature data.

[0098] S2012. Conduct a bench test on the IGBT under the simulation working condition to determine the temperature change data of the IGBT under the simulation working condition.

[0099] In some embodiments, the current and voltage parameters of the electronic control under the full throttle state of the vehicle pedal can be obtained, and after adaptively modifying the current and voltage parameters, they are defined as the simulation working condition of the IGBT, and the difference between the high and low temperatures of the IGBT junction temperature under the simulation working condition is measured, that is, the simulation temperature difference is denoted as ΔT Test .

[0100] It should be noted that the temperature change of the IGBT under the full throttle state of the vehicle pedal is large, and the test time of the simulation working condition can be shortened. The definition of the simulation working condition needs to comprehensively consider comprehensive factors such as the cycle of the IGBT thermal stress endurance test and the typicality of the working condition. The larger the simulation temperature difference ΔT Test , the larger the acceleration coefficient, and the more the test cycle of the simulation working condition can be shortened. Other typical working conditions can also be developed or selected as the simulation working condition according to the usage scenario.

[0101] As an example, Figure 6 is a bench cycle working condition diagram of a simulation working condition shown according to an exemplary embodiment. As Figure 6 shown, the electronic control parameters under the full throttle state of the reference vehicle are selected and defined as the IGBT simulation working condition. Among them, the horizontal axis represents the time t, with the unit of s, and the vertical axis represents the current I, with the unit of A. Within the T1 time, the current rises from 0 to 480 A. Within the T2 time, the current remains constant at 480 A and lasts for the T2 duration. Within the T3 time, the current drops from 480 A to 0. T4 is the cycle interval time.

[0102] It should be understood that the cycle interval time can be adjusted under the conditions permitted by the development cycle to shorten the test cycle. The cycle interval time affects the temperature change value.

[0103] S2013. Determine the cycle simulation times of the IGBT under the simulation condition based on the temperature change data of the IGBT under the actual condition and the simulation condition.

[0104] It should be understood that the temperature change data of the IGBT under the actual condition is statistically analyzed through the IGBT junction temperature data, and the temperature change data of the IGBT under the simulation condition is determined through the simulation bench test, so as to more accurately determine the cycle simulation times based on the temperature change data of the IGBT under the actual condition and the simulation condition, improving the accuracy of the cycle simulation times. Analyzing the temperature change data of the IGBT under the actual condition through the raindrop counting enables the temperature change data of the IGBT under the actual condition to accurately reflect the thermal stress damage of the IGBT under the actual condition, so as to more accurately determine the cycle simulation times.

[0105] In still some other embodiments, as Figure 7 shown, the IGBT thermal stress life analysis method provided by the embodiment of the present application further includes the following steps:

[0106] S203. Determine the first cycle times and the second cycle times.

[0107] Wherein, the first cycle times is the cycle simulation times when the IGBT has thermal stress failure under the simulation condition. The second cycle times is the cycle simulation times corresponding to the temperature change data before the IGBT has thermal stress failure under the actual condition.

[0108] In some embodiments, to verify whether the simulation condition achieves the verification effect equivalent to the actual condition, the second cycle times under the actual condition can be determined based on the temperature change data before the IGBT has thermal stress failure under the actual condition. And a thermal stress endurance test is performed on the IGBT under the simulation condition until the IGBT has thermal stress failure, obtaining the first cycle times under the simulation condition.

[0109] S204. Calculate the error of the thermal stress life of the IGBT based on the first cycle times and the second cycle times.

[0110] Wherein, the error is the ratio of the difference between the second cycle times and the first cycle times to the first cycle times.

[0111] In some embodiments, without considering the consistency difference of different IGBT samples, the error of calculating the thermal stress life of the IGBT can be determined through the following expression (2):

[0112] ε = (N 2 - N 1 ) / N 1 (2);

[0113] where ε represents the error of the thermal stress life of the IGBT. N 2 represents the second number of cycles, and N 1 represents the first number of cycles.

[0114] It should be understood that through the first number of cycles and the second number of cycles, the error of the number of cycle simulations is determined, so as to more accurately evaluate the thermal stress life of the IGBT and improve the reliability of the IGBT. By normalizing the difference in the thermal stress life of the IGBT with the second number of cycles and the first number of cycles, the error can more intuitively reflect the deviation degree of the thermal stress life of the IGBT.

[0115] Figure 8 is a schematic diagram of an IGBT thermal stress failure mode shown according to an exemplary embodiment. The comparison of the IGBT thermal stress failure modes under actual working conditions and simulation working conditions is as Figure 8 shown. The failure positions of the two IGBT thermal stress durability test schemes are the same, both showing that the edge of the Die of the IGBT near the trench area cracks and fails, and the failure center points of the upper and lower bridge circuits are both located in the IGBT trench area. Therefore, simulating the IGBT thermal stress durability test under actual working conditions through the simulation working conditions has an equivalent effect to the actual working conditions.

[0116] The above mainly introduces the solution provided by the embodiments of the present application from the perspective of the method. To implement the above functions, the IGBT thermal stress life analysis device or electronic device includes the corresponding hardware structure and / or software module for executing each function. Those skilled in the art should easily realize that, combining the units and algorithm steps of each example described in the embodiments disclosed in this article, the present application can be implemented in the form of hardware or a combination of hardware and computer software. Whether a certain function is executed in the way of hardware or computer software driving hardware depends on the specific application and design constraint conditions of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present application.

[0117] The embodiments of the present application can, according to the above method, exemplarily divide the functional modules of an IGBT thermal stress life analysis device or an electronic device. For example, the IGBT thermal stress life analysis device or the electronic device may include respective functional modules corresponding to each functional division, or two or more functions may be integrated into one processing module. The above integrated modules can be implemented in the form of hardware or in the form of software functional modules. It should be noted that the division of modules in the embodiments of the present application is illustrative, only a logical functional division, and there may be other division methods in actual implementation.

[0118] Figure 9 is a block diagram of an IGBT thermal stress life analysis device shown according to an exemplary embodiment. Referring to Figure 9 FIG. 900, the IGBT thermal stress life analysis device 900 includes: a determination module 901. The determination module 901 is configured to determine the number of cyclic simulations of the IGBT under the simulation condition based on the temperature change data of the IGBT under the actual condition and the simulation condition; the simulated thermal stress damage corresponding to the number of cyclic simulations of the IGBT under the simulation condition is equivalent to the thermal stress damage of the IGBT under the actual condition; the determination module 901 is further configured to determine the thermal stress life of the IGBT based on the number of cyclic simulations.

[0119] In a possible implementation manner, the temperature change data of the IGBT under the actual condition includes: a plurality of temperature change values and the number of each temperature change value; the temperature change data of the IGBT under the simulation condition includes: a simulated temperature difference; the determination module 901 is specifically configured to determine the number of cyclic simulations of the IGBT under the simulation condition based on the plurality of temperature change values, the simulated temperature difference, and the number of each temperature change value.

[0120] In another possible implementation manner, the determination module 901 is specifically configured to determine an acceleration coefficient corresponding to each temperature change value under the simulation condition based on the plurality of temperature change values and the simulated temperature difference; the acceleration coefficient is used to characterize the acceleration degree of the thermal stress damage of the IGBT under the simulation condition relative to the thermal stress damage of the IGBT under the actual condition; the number of cyclic simulations of the IGBT under the simulation condition is determined based on the acceleration coefficient corresponding to each temperature change value and the number of each temperature change value.

[0121] In still another possible implementation manner, the determination module 901 is specifically configured to input each temperature change value, the simulated temperature difference, and the attribute information of the IGBT into the Coffin-Manson model for each temperature change value, and calculate the acceleration coefficient corresponding to each temperature change value under the simulation condition; the attribute information is used to characterize the sensitivity of the material of the IGBT to the thermal stress damage caused by temperature change.

[0122] In yet another possible implementation manner, the determining module 901 is specifically configured to, for each temperature change value, multiply the acceleration coefficient corresponding to each temperature change value by the number of each temperature change value to obtain the converted number of times corresponding to each temperature change value; the thermal stress damage corresponding to the converted number of times of the IGBT under the simulation condition is equivalent to the thermal stress damage corresponding to the number of temperature change values of the IGBT under the actual condition; and accumulate the converted number of times corresponding to multiple temperature change values to obtain the cyclic simulation number of times of the IGBT under the simulation condition.

[0123] In yet another possible implementation manner, the determining module 901 is specifically configured to determine the temperature change data of the IGBT under the actual condition based on the junction temperature data of the IGBT under the actual condition; conduct a bench test on the IGBT under the simulation condition to determine the temperature change data of the IGBT under the simulation condition; and determine the cyclic simulation number of times of the IGBT under the simulation condition based on the temperature change data of the IGBT under the actual condition and the simulation condition.

[0124] In yet another possible implementation manner, the determining module 901 is specifically configured to perform raindrop counting analysis on the junction temperature data of the IGBT under the actual condition to obtain the temperature change data of the IGBT under the actual condition.

[0125] In yet another possible implementation manner, the device further includes: a calculating module 902. The determining module 901 is further configured to determine a first number of cycles and a second number of cycles; the first number of cycles is the cyclic simulation number of times when the IGBT has a thermal stress failure under the simulation condition; the second number of cycles is the cyclic simulation number of times corresponding to the temperature change data before the IGBT has a thermal stress failure under the actual condition; and the calculating module 902 is further configured to calculate the error of the thermal stress life of the IGBT based on the first number of cycles and the second number of cycles.

[0126] In yet another possible implementation manner, the error is the ratio of the difference between the second number of cycles and the first number of cycles to the first number of cycles.

[0127] According to the above technical means, by using the temperature change data of the IGBT under the actual condition and the simulation condition, the cyclic simulation number of times of the IGBT under the simulation condition that is equivalent to the thermal stress damage of the IGBT under the real condition is determined, so as to simulate the thermal stress damage of the IGBT under the actual condition under the simulation condition, improving the accuracy of the thermal stress life of the IGBT. And the test effect equivalent to the actual condition is achieved under the simulation condition, improving the test cycle of the thermal stress life analysis of the IGBT and reducing the test resource cost.

[0128] Regarding the device in the above embodiments, the specific manners in which each module performs operations have been described in detail in the embodiments related to the method, and will not be elaborated here.

[0129] Figure 10 is a block diagram of an electronic device shown according to an exemplary embodiment. As Figure 10 shown, the electronic device 1000 includes, but is not limited to: a processor 1001 and a memory 1002.

[0130] Among them, the above-mentioned memory 1002 is used to store executable instructions of the above-mentioned processor 1001. It can be understood that the above-mentioned processor 1001 is configured to execute instructions to implement the IGBT thermal stress life analysis method in the above-mentioned embodiment.

[0131] It should be noted that those skilled in the art can understand that Figure 10 the structure of the electronic device shown in Figure 10 does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than

[0132] shown, or combine certain components, or have different component arrangements.

[0132] The processor 1001 is the control center of the electronic device, connecting various parts of the entire electronic device through various interfaces and lines. By running or executing software programs and / or modules stored in the memory 1002, and calling data stored in the memory 1002, it executes various functions of the electronic device and processes data, thereby monitoring the electronic device as a whole. The processor 1001 may include one or more processing units. Optionally, the processor 1001 may integrate an application processor and a modem processor. Among them, the application processor mainly processes the operating system, user interface, application programs, etc., and the modem processor mainly processes wireless communication. It can be understood that the above-mentioned modem processor may not be integrated into the processor 1001 either.

[0133] The memory 1002 can be used to store software programs and various data. The memory 1002 may mainly include a program storage area and a data storage area. Among them, the program storage area may store the operating system, application programs required by at least one functional module (such as a determination unit, a processing unit, etc.). In addition, the memory 1002 may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0134] In an exemplary embodiment, there is also provided a computer-readable storage medium including instructions, such as the memory 1002 including instructions. The above instructions can be executed by the processor 1001 of the electronic device 1000 to implement the IGBT thermal stress life analysis method in the above-mentioned embodiment.

[0135] In actual implementation, Figure 9 the functions of the determination module 901 and the calculation module 902 in Figure 10The processor 1001 in it calls the computer program stored in the memory 1002 to implement. For the specific execution process, reference can be made to the description of the method part in the above embodiment, which will not be elaborated here.

[0136] Optionally, the computer-readable storage medium may be a non-transitory computer-readable storage medium. For example, the non-transitory computer-readable storage medium may be a read-only memory (ROM), a random access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, and an optical data storage device, etc.

[0137] In an exemplary embodiment, the embodiment of the present application further provides a computer program product including one or more instructions, and the one or more instructions can be executed by the processor 1001 of the electronic device to complete the IGBT thermal stress life analysis method in the above embodiment.

[0138] It should be noted that when the instructions in the above computer-readable storage medium or the one or more instructions in the computer program product are executed by the processor of the electronic device, the various processes of the above method embodiment are implemented, and the same technical effects as the above method can be achieved. To avoid repetition, it will not be elaborated here.

[0139] Through the description of the above embodiments, those skilled in the art can clearly understand that for the convenience and conciseness of description, only the above division of each functional module is used as an example. In actual applications, the above functions can be allocated to different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above.

[0140] In several embodiments provided by the present application, it should be understood that the disclosed device and method can be implemented in other ways. For example, the device embodiments described above are only illustrative. For example, the division of modules or units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point, the displayed or discussed coupling or direct coupling or communication connection between each other can be through some interfaces, and the indirect coupling or communication connection of the device or unit can be in an electrical, mechanical or other form.

[0141] The unit described as a separated component may or may not be physically separated, and the component displayed as a unit may be a physical unit or multiple physical units, that is, it may be located in one place, or may be distributed to multiple different places. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0142] In addition, in each embodiment of the present application, each functional unit may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of a software functional unit.

[0143] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a readable storage medium. Based on such an understanding, the technical solution of the embodiments of the present application, in essence, or the part that contributes to the prior art, or all or part of this technical solution can be embodied in the form of a software product. The software product is stored in a storage medium and includes several instructions for causing a device (which may be a single-chip microcomputer, a chip, etc.) or a processor to execute all or part of the steps of the methods of the various embodiments of the present application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, ROM, RAM, magnetic disks, or optical discs that can store program codes.

[0144] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be covered by the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An IGBT thermal stress life analysis method, characterized in that: The method comprises: Based on the temperature change data of the IGBT under the actual working condition and the simulated working condition, determining the number of cycle simulations of the IGBT under the simulated working condition; the simulated thermal stress damage corresponding to the number of cycle simulations of the IGBT under the simulated working condition is equivalent to the thermal stress damage of the IGBT under the actual working condition; Based on the number of cycle simulations, a thermal stress life of the IGBT is determined.

2. The method according to claim 1, characterized in that: The temperature change data of the IGBT under the actual working condition includes: a plurality of temperature change values ​​and the number of each temperature change value; the temperature change data of the IGBT under the simulation working condition includes: a simulation temperature difference; the determining the number of cycle simulations of the IGBT under the simulation working condition based on the temperature change data of the IGBT under the actual working condition and the simulation working condition includes: The number of cycle simulations of the IGBT under the simulation condition is determined based on the multiple temperature change values, the simulation temperature difference and the number of each temperature change value.

3. The method according to claim 2, characterized in that The determining, based on the multiple temperature change values, the simulated temperature difference and the number of each temperature change value, the number of cycle simulations of the IGBT under the simulation working condition comprises: Based on the multiple temperature change values ​​and the simulated temperature difference, determining an acceleration coefficient corresponding to each temperature change value under the simulated working condition; the acceleration coefficient is used to characterize the acceleration degree of thermal stress damage of the IGBT under the simulated working condition relative to the thermal stress damage of the IGBT under the actual working condition; Based on the acceleration coefficient corresponding to each temperature change value and the number of each temperature change value, the number of cycle simulations of the IGBT under the simulation condition is determined.

4. The method according to claim 3, characterized in that The step of determining, based on the multiple temperature change values ​​and the simulated temperature difference, an acceleration coefficient corresponding to each temperature change value under the simulated working condition comprises: For each temperature change value, each temperature change value, the simulated temperature difference, and the property information of the IGBT are input into the Coffin Manson model to calculate the acceleration coefficient corresponding to each temperature change value under the simulation condition; the property information is used to characterize the sensitivity of the material of the IGBT to thermal stress damage caused by temperature changes.

5. The method according to claim 3, characterized in that: The determining, based on the acceleration coefficient corresponding to each temperature change value and the number of each temperature change value, the number of cycle simulations of the IGBT under the simulation condition comprises: For each temperature change value, the acceleration coefficient corresponding to each temperature change value is multiplied by the number of each temperature change value to obtain the conversion number corresponding to each temperature change value; the thermal stress damage corresponding to the conversion number of the IGBT under the simulation working condition is equivalent to the thermal stress damage corresponding to the number of temperature change values ​​of the IGBT under the actual working condition; The converted times corresponding to the multiple temperature change values ​​are accumulated to obtain the cycle simulation times of the IGBT under the simulation condition.

6. The method according to any one of claims 1 to 5, characterized in that: The determining, based on the temperature variation data of the IGBT under the actual working condition and the simulated working condition, the number of cycle simulations of the IGBT under the simulated working condition comprises: Determining temperature change data of the IGBT under the actual working condition based on the junction temperature data of the IGBT under the actual working condition; Performing a bench test on the IGBT under the simulation working condition to determine temperature change data of the IGBT under the simulation working condition; Based on the temperature variation data of the IGBT under the actual working condition and the simulation working condition, the number of cycle simulations of the IGBT under the simulation working condition is determined.

7. The method according to claim 6, characterized in that The determining, based on the junction temperature data of the IGBT under the actual working condition, the temperature change data of the IGBT under the actual working condition comprises: A raindrop counting analysis is performed on the junction temperature data of the IGBT under the actual working condition to obtain the temperature change data of the IGBT under the actual working condition.

8. The method according to any one of claims 1 to 5, characterized in that: The method further comprises: Determine a first cycle number and a second cycle number; the first cycle number is the cycle simulation number when the IGBT fails under the simulation condition due to thermal stress; the second cycle number is the cycle simulation number corresponding to the temperature change data before the IGBT fails under the actual condition due to thermal stress; Based on the first number of cycles and the second number of cycles, an error in the thermal stress life of the IGBT is calculated.

9. The method according to claim 8, characterized in that The error is a ratio of a difference between the second cycle number and the first cycle number to the first cycle number.

10. An IGBT thermal stress life analysis device, characterized in that: The device comprises a determination module; The determination module is used to determine the number of cycle simulations of the IGBT under the simulation conditions based on the temperature change data of the IGBT under the actual working conditions and the simulation working conditions; the simulated thermal stress damage corresponding to the number of cycle simulations of the IGBT under the simulation working conditions is equivalent to the thermal stress damage of the IGBT under the actual working conditions; The determination module is further used to determine the thermal stress life of the IGBT based on the number of cycle simulations.

11. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is configured to execute the instructions to implement the method according to any one of claims 1 to 9.

12. A vehicle, characterized in that: include: The IGBT thermal stress life analysis device according to claim 10, or the electronic device according to claim 11.

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