Mini-LED backboard structure with glass through hole and technology

Abstract

The invention relates to the field of LED backboard production, and discloses a mini-LED backboard structure with glass through holes and a technology, the mini-LED backboard structure comprises a glass substrate, the glass substrate is provided with a plurality of interconnected glass through holes, one side of the glass substrate is fixedly provided with a first metal wiring layer, the other side of the glass substrate is fixedly provided with a second metal wiring layer, the first metal wiring layer is fixedly provided with high-reflection white ink, and the second metal wiring layer is fixedly provided with high-reflection white ink. A plurality of bumps are fixedly arranged on the high-reflection white ink, LEDs are fixedly arranged on the bumps, and a driving IC and components are fixedly arranged on the side, away from the glass substrate, of the second metal wiring layer. The metal wiring layers are machined on the two sides of the glass substrate, then the interconnected glass through holes are machined in the glass substrate, gaps in the lamp panel are reduced, and then the high-reflection coating is machined on the glass substrate through silk-screen printing, so that the backlight efficiency is improved, the structure of the back plate is simplified, the backlight utilization efficiency is improved, and the light emitting efficiency is improved. The reflecting film material does not need to be additionally assembled, and the processing operation flow is simplified through temporary bonding and de-bonding operation.

Description

Technical Field

[0001] The present invention relates to the field of LED backplane production, specifically to a mini-LED backplane structure and process with glass vias. Background Art

[0002] As a passive display device, TFT-LCD with cost advantages is still the current mainstream display technology. However, with the development of new display technologies such as AMOLED and micro-LED, they exceed TFT-LCD in terms of contrast ratio, color gamut, response time, volume, thickness, etc. However, the cost of large sizes is still very high. Therefore, the emergence of mini-LED and quantum dot technologies enables large-size TFT-LCD to still have great advantages in terms of realistic effects and costs.

[0003] MiniLED is an LED device with a chip size between 50 and 200 μm. Traditional mini-LED uses a PCB as the backplane. However, with the increase in mini-LED partitions and the decrease in LED pitch, its heat dissipation and warping have become bottlenecks restricting the development of mini-LED technology. Therefore, the development of glass substrates has emerged as the times require.

[0004] However, for the high-partition glass substrates in the prior art, the requirements for the pitch of the spliced lamp boards are high, and the FPCA bending scheme will limit the pitch of the spliced boards. At the same time, the light efficiency utilization rate on the LED backplane is low. Therefore, it is necessary to design a mini-LED backplane structure and process with glass vias. Summary of the Invention

[0005] The purpose of the present invention is to provide a mini-LED backplane structure and process with glass vias to solve the problems in the prior art.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A mini-LED backplane structure and process with glass vias. The mini-LED backplane structure includes a glass substrate. A plurality of interconnected glass vias are provided on the glass substrate. A first metal wiring layer is fixedly provided on one side of the glass substrate, and a second metal wiring layer is fixedly provided on the other side. A highly reflective white ink is fixedly provided on the first metal wiring layer. A plurality of bumps are fixedly provided on the highly reflective white ink, and LEDs are fixedly provided on the bumps. A driving IC and components are fixedly provided on the side of the second metal wiring layer away from the glass substrate.

[0008] Further, the process includes the following steps:

[0009] S1. First, drill holes in the glass, and complete the production of glass vias through a laser-induced etching process.

[0010] S2. Fill the glass vias with a metal material and fill the glass vias through an electroplating process.

[0011] S3. Fabricate a single-layer or multi-layer metal thin film on the surface of the glass substrate through PVD, electroplating, etching, evaporation, and yellow light coating processes, and then fabricate a metal trace layer.

[0012] S4. Print a layer of TiO 2 mixed high-reflection coating layer on the surface through a screen printing process.

[0013] S5. Fill the via holes of the high-reflection coating layer with bump material through a screen printing process.

[0014] S6. Solder the LED through a reflow soldering process to complete the LED soldering operation.

[0015] S7. First coat a photosensitive or thermosensitive material on the surface of the glass carrier through a temporary bonding process, and then temporarily bond the LED side of the mini-LED backplane downward to the surface of the glass carrier, with the unprocessed side of the mini-LED backplane facing upward.

[0016] S8. Fabricate a single-layer or multi-layer metal thin film on the other side surface of the glass substrate through PVD, electroplating, and evaporation coating processes to fabricate a metal trace layer.

[0017] S9. Solder the IC and components to the surface through a reflow soldering process.

[0018] S10. Finally, separate the carrier from the mini-LED backplane by heating or laser debonding.

[0019] Further, the metal material in S2 is one of Cu and Sn.

[0020] Further, the thickness of the metal thin film in S3 is 100 nm to 1 μm, and the metal material is one or more composite layers of Al, Cu, Ti, Ag, etc.

[0021] Further, the metal trace layer is prepared through coating, exposure, development, etching, and stripping processes in the process.

[0022] Further, a patterned metal trace layer is fabricated on the surface through a printing process in the process.

[0023] Further, the thickness of the high-reflective white ink layer prepared in S4 is 0.5 μm to 10 μm.

[0024] Further, the bump material is solder paste.

[0025] Advantages of the present invention:

[0026] 1. The mini-LED backplane structure and process with glass vias of the present invention, in which metal wiring layers are processed on both sides of a glass substrate, and then interconnected glass vias are processed on the glass substrate to reduce the gaps on the lamp board. Then, a high-reflection coating is processed on the glass substrate by screen printing to improve the backlight efficiency.

[0027] 2. The mini-LED backplane structure and process with glass vias of the present invention simplifies the backplane structure, improves the backlight utilization efficiency, eliminates the need for additional assembly of reflective film materials, reduces the board spacing, has a simple structure, and simplifies the processing operation flow through temporary bonding and debonding operations. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present invention will be further described below with reference to the drawings.

[0029] Figure 1 is a schematic diagram of the mini-LED backplane structure of the present invention;

[0030] Figure 2 is a schematic diagram of the prior art backplane structure of the present invention;

[0031] Figure 3 is a schematic diagram of the mini-LED backplane process of the present invention;

[0032] Figure 4 is a schematic diagram of the mini-LED backplane process of the present invention;

[0033] Figure 5 is a schematic diagram of the mini-LED backplane process of the present invention;

[0034] Figure 6 is a schematic diagram of the mini-LED backplane process of the present invention;

[0035] Figure 7 is a process flow chart of the mini-LED backplane of the present invention.

[0036] The brief description of the drawings is as follows:

[0037] 1. Glass substrate; 2. Interconnected glass via; 3. First metal wiring layer; 4. High-reflective white ink; 5. Bump; 6. LED; 7. Second metal wiring layer; 8. Driver IC and components. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0038] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0039] The mini-LED backplane structure and process with glass vias are as Figures 1-6 shown. The mini-LED backplane structure includes a glass substrate 1, on which a plurality of interconnected glass vias 2 are formed. On one side of the glass substrate 1, a first metal wiring layer 3 is fixedly provided, and on the other side, a second metal wiring layer 7 is fixedly provided. A highly reflective white ink 4 is fixedly provided on the first metal wiring layer 3, a plurality of bumps 5 are fixedly provided on the highly reflective white ink 4, an LED 6 is fixedly provided on the bumps 5, and a driving IC and components 8 are fixedly provided on the side of the second metal wiring layer 7 away from the glass substrate 1.

[0040] A highly reflective coating is coated on the glass surface on the light-emitting side of the backplane structure by screen printing, and a zero-splicing mini-LED backplane structure is realized in combination with the structure of the glass vias. Compared with the backplane structure of the prior art as Figure 2 shown, it has a highly reflective white ink coating, which has the function of reflecting light and has high crosstalk and light efficiency utilization.

[0041] As Figures 3-7 shown, the processing technology of the backplane structure includes the following steps:

[0042] S1. First, drill holes in the glass, and complete the production of glass vias through a laser-induced etching process.

[0043] S2. Fill the glass vias with a metal material, and the metal material includes Cu and Sn. Fill the glass vias through an electroplating process.

[0044] S3. Use coating processes such as PVD, electroplating, etching, evaporation, and yellow light to produce a single-layer or multi-layer metal film with a thickness of 100 nm to 1 μm on the glass substrate surface. The metal materials include Al, Cu, Ti, and Ag. Then, produce a metal wiring layer through coating, exposure, development, etching, and stripping, or produce a patterned metal wiring layer on the surface through printing and other processes.

[0045] S4. Print a TiO 2 mixed highly reflective coating, that is, the highly reflective white ink 4, on the surface through screen printing and other processes, and the thickness is 0.5 μm to 10 μm.

[0046] S5. Fill bump materials such as solder paste at the vias of the highly reflective coating through screen printing and other processes.

[0047] S6. Perform the soldering of the LED through processes such as reflow soldering to complete the LED soldering operation.

[0048] S7. Through the temporary bonding process, first coat a layer of photosensitive or thermosensitive material on the surface of the glass carrier, and then temporarily bond the LED side of the mini-LED backplane downward to the surface of the glass carrier, with the unprocessed side of the mini-LED backplane facing upward.

[0049] S8. Through coating processes such as PVD, electroplating, and evaporation, fabricate a single-layer or multi-layer metal thin film of Al, Cu, Ti, Ag, etc. with a thickness of 100 nm to 1 μm on the other surface of the glass substrate, and then fabricate the metal wiring layer through coating, exposure, development, etching, and stripping, or fabricate a patterned metal wiring layer on the surface through processes such as printing.

[0050] S9. Solder the IC and components to the surface through processes such as reflow soldering.

[0051] S10. Finally, separate the carrier from the mini-LED backplane by heating or laser debonding.

[0052] The working principle is as follows:

[0053] By first fabricating the LED structure on one side of the glass substrate 1, the LED structure includes a high-reflection coating material screen-printed on the surface of the glass substrate 1, which improves the backlight effect of the LED backplane. Then, after temporarily bonding the glass carrier, with the unprocessed side of the glass substrate 1 facing upward, process the other side of the glass substrate 1 to form the metal wiring layer 27 and the driving IC and components 8. Thus, zero-gap lamp board splicing processing is achieved, reducing the backplane backlight structure, eliminating the need for assembling a secondary reflector film material, and through the operations of temporary bonding and debonding, the processing cost is reduced and the processing operation is simplified.

[0054] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. What is described in the above embodiments and the specification only illustrates the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed.

Claims

1. A mini-LED backplane structure and process with a through-glass hole, wherein the mini-LED backplane structure comprises a glass substrate (1), characterized in that: The glass substrate (1) is provided with a plurality of interconnected glass through holes (2); a first metal wiring layer (3) is fixedly provided on one side of the glass substrate (1); a second metal wiring layer (7) is fixedly provided on the other side; a highly reflective white ink (4) is fixedly provided on the first metal wiring layer (3); a plurality of bumps (5) are fixedly provided on the highly reflective white ink (4); an LED (6) is fixedly provided on the bumps (5); and a driver IC and components (8) are fixedly provided on a side of the second metal wiring layer (7) away from the glass substrate (1).

2. The mini-LED backplane structure and process with through-glass holes according to claim 1, characterized in that: The process comprises the following steps: S1, first punch the glass, and complete the production of glass through-holes through the laser-induced etching process; S2, filling the metal material into the through-glass hole, and filling the through-glass hole by electroplating process; S3, making a single layer or multiple layers of metal film on the surface of the glass substrate through PVD, electroplating, etching, evaporation, and yellow light coating processes, and then making a metal wiring layer; S4, printing a layer of TiO2 mixed high-reflective layer on the surface by screen printing process; S5. Fill the bump material in the via holes of the high-reflective layer by screen printing process; S6, soldering the LED through a reflow soldering process to complete the LED soldering operation; S7. First, a layer of photosensitive or heat-sensitive material is coated on the surface of the glass carrier through a temporary bonding process, and then the LED side of the mini-LED backplane is temporarily bonded to the surface of the glass carrier with the LED side facing downward, so that the unprocessed side of the mini-LED backplane faces upward; S8, forming a single layer or multiple layers of metal film on the other surface of the glass substrate by PVD, electroplating, or evaporation coating process to form a metal wiring layer; S9, soldering the IC and components to the surface through a reflow process; S10. Finally, separate the carrier board from the mini-LED backplane by heating or laser debonding.

3. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: The metal material in S2 is one of Cu and Sn.

4. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: The thickness of the metal film in S3 is 100nm-1um, and the metal material is one of Al, Cu, Ti, and Ag.

5. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: In the process, the metal wiring layer is prepared through coating, exposure, development, etching and stripping processes.

6. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: In the process, a patterned metal wiring layer is produced on the surface through a printing process.

7. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: The thickness of the highly reflective white ink layer prepared in S4 is 0.5um to 10um.

8. The mini-LED backplane structure and process with through-glass holes according to claim 2, characterized in that: The bump material is solder paste.

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