Display device

Abstract

A display device of the present disclosure includes a flexible substrate including an active area including an anode electrode, a light emitting layer, and a cathode electrode, a passive area disposed around the active area, and a connection area disposed in the passive area, and the passive area including a gate driving portion, a thin film transistor in the active region and including the semiconductor layer, the gate electrode, and the source and drain electrodes; a planarization layer disposed on the thin film transistor, and wherein the anode electrode is disposed on the planarization layer; a bank layer disposed on the anode electrode; a connection electrode located at the passive region, disposed on the planarization layer, and provided with at least one degassing pattern, in which the cathode electrode extends to the passive region and contacts the connection electrode in the connection region; at least one dam structure disposed around the active area; and a low voltage supply line contacting the connection electrode in the passive region.

Description

[0001] This application is a divisional application of the patent application No. 202011373583.4, with the filing date of November 30, 2020 and the invention title of "display device".

[0002] Cross-reference to related applications

[0003] This application claims the priority and benefits of Korean Patent Application No. 10-2019-0164575, filed on December 11, 2019, the entire content of which is incorporated herein by reference. Technical field

[0004] The present disclosure relates to a display device.

[0005] Description of related art

[0006] Recently, with the advent of the information age, the display field for visually expressing electrical information signals has been rapidly developed, and in response thereto, various display devices having excellent performance such as thinness, light weight, and low power consumption have been developed.

[0007] Specific examples of display devices include liquid crystal display devices (LCDs), organic light-emitting display devices (OLEDs), quantum dot display devices, and the like.

[0008] The OLED may include a display panel and a plurality of components for providing various functions. For example, one or more display driving circuits for controlling the display panel may be included in the display assembly. Examples of driving circuits include a gate driver, a light-emitting (source) driver, a power supply (VDD) wiring, an electrostatic discharge (ESD) circuit, a multiplexing (MUX) circuit, a data signal line, a cathode contact, and an external functional element. A plurality of peripheral circuits for providing various types of additional functions (e.g., touch sensing or fingerprint recognition functions) may be included in the display assembly. Some components may be disposed on the display panel itself, or may be disposed on a region adjacent to the display region as a non-display region and / or a passive (inactive) or non-active region. In addition, the organic light-emitting device used in the organic light-emitting display device is a self-luminous device, in which a light-emitting layer is formed between two electrodes. The organic light-emitting device is a device that emits light when excitons fall from an excited state to a ground state, and the excitons are generated by the internal injection and combination of electrons and holes respectively from an electron injection electrode and a hole injection electrode. The electron injection electrode may be an upper electrode or a cathode, and the hole injection electrode may be a lower electrode or an anode. The upper electrode needs to be connected to a low-voltage supply line, and a contact structure for connection may be disposed in the passive region.

[0009] The size of a display device is a very important factor in design, and in particular, a high ratio of the size of an active area to the size of a passive area can be one of the main features. The ratio of the size of the active area to the size of the passive area is referred to as the screen-to-bezel ratio. However, disposing some of the above components in the display assembly and disposing the contact structure of the upper electrode and the low-voltage supply line outside requires a relatively large passive area. The contact structure of the upper electrode and the low-voltage supply line disposed outside the component may be easily exposed to external moisture infiltration from the trimming line generated at the outermost passive area of the substrate or from cracks at the trimming line of the substrate. Therefore, in order to protect the components from external moisture infiltration, a certain distance from the trimming line of the substrate is required outside the contact structure of the upper electrode and the low-voltage supply line, and there are limitations in reducing the bezel area. SUMMARY OF THE INVENTION

[0010] The inventors of the present disclosure have recognized that various techniques including the arrangement of components such as a gate driver or ESD and an optimal driving method are required to achieve a narrow bezel that reduces the size of the passive area. Therefore, the inventors of the present disclosure have conducted various experiments on the arrangement of components that can well protect the organic light-emitting device in the active area while effectively using the space of the passive area. Through several experiments, a new structure in which a low-voltage supply line and an upper electrode constituting an organic light-emitting device are in contact with each other has been invented.

[0011] For example, an isolation area can be provided in the passive area of the organic insulating layer, which is one of the paths through which external moisture penetrates into the active area. The organic insulating layer has been removed outside the gate-in-panel (GIP) area in the passive area to prevent moisture penetration, but the isolation area of the organic insulating layer can also be provided in the GIP area. If the planarization layer, the bank layer, and the spacer layer are removed for a certain period of time, the inorganic insulating layer may be the only path through the active area.

[0012] In addition, a connection structure of the upper electrode and the low-voltage supply line can be provided by using the isolation area of the organic insulating layer. The upper electrode and the low-voltage supply line may have a connection structure outside the GIP area, and since additional space is required for this connection structure, there are limitations in reducing the bezel area. As a way to reduce this limitation, the space of the bezel area can be saved by connecting the upper electrode and an intermediate connection electrode in the GIP area and connecting the intermediate connection electrode and the low-voltage supply line outside the GIP area.

[0013] An intermediate connection electrode is required to simplify the connection structure between the upper electrode and the low-voltage supply line while forming the isolation region of the organic insulating layer. If the isolation region of the organic insulating layer is formed in the GIP region, a hole as deep as the thickness of the organic insulating layer is created. When the upper electrode is formed in the deep hole, the upper electrode may break or be inadequately formed due to its thin thickness. To prevent this phenomenon, an intermediate connection electrode can be disposed in the hole region, and a contact guarantee region where the upper electrode and the intermediate connection electrode can contact each other can be formed, thereby achieving a more stable connection structure.

[0014] Through these experiments, a display device capable of preventing moisture penetration while reducing the passive region of the display device can be achieved.

[0015] Accordingly, the present disclosure relates to a display device that substantially eliminates one or more of the problems caused by the limitations and disadvantages of the related art.

[0016] The object of the present disclosure is to provide an external structure of an organic light-emitting display device.

[0017] The problems of the present disclosure are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

[0018] A display device according to an embodiment of the present disclosure includes: a display panel including an active region and a passive region, wherein the active region includes an anode electrode, an organic light-emitting layer, and a cathode electrode, and the passive region includes a gate driving part and a crack prevention pattern, and further includes a contact region (or connection region) disposed in a region adjacent to the gate driving part, wherein in the contact region, the cathode electrode and a connection electrode above the gate driving part can contact each other.

[0019] In another aspect, a display device according to an embodiment of the present disclosure includes: a display panel including an active region and a passive region, wherein the active region includes a thin-film transistor, and a planarization layer, a first electrode, a bank layer, an organic light-emitting layer, and a second electrode are sequentially disposed on the thin-film transistor, wherein the passive region includes a gate driving part, a dam structure, and a crack prevention structure, and further includes a contact region where a connection electrode disposed above the gate driving part is connected to an extension of the second electrode.

[0020] In another aspect, a display device according to an embodiment of the present disclosure includes: a flexible substrate including an active region, a passive region disposed around the active region, and a connection region disposed in the passive region, the active region including an anode electrode, a light-emitting layer, and a cathode electrode, and the passive region including a gate driving portion, a thin-film transistor in the active region and including a semiconductor layer, a gate electrode, and a source electrode and a drain electrode; a planarization layer disposed on the thin-film transistor, and wherein the anode electrode is disposed on the planarization layer; a bank layer disposed on the anode electrode; a connection electrode located in the passive region, disposed on the planarization layer and provided with at least one degassing pattern, wherein the cathode electrode extends to the passive region and contacts the connection electrode in the connection region; at least one dam structure disposed around the active region; and a low-voltage supply line that contacts the connection electrode in the passive region.

[0021] Details of other embodiments are included in the detailed description and the drawings.

[0022] The display device according to the embodiment may have a structure in the passive region for disconnecting an organic insulating layer connected to the active region, and may prevent moisture introduced from the outside from reaching the organic light-emitting device in the active region. For example, a structure may be provided that partially removes the planarization layer and the bank layer above the gate driving portion in the passive region and disconnects the planarization layer and the bank layer, and a path through which moisture can penetrate may be blocked by further removing an inorganic insulating layer other than the planarization layer and the bank layer, thereby providing a display device resistant to moisture penetration.

[0023] An intermediate structure for electrically connecting the cathode electrode of the organic light-emitting device and the low-voltage supply line disposed in the passive region may be provided in the structure for disconnecting the organic insulating layer in the passive region. For example, when the connection electrode is disposed in the isolation region of the organic insulating layer and the cathode electrode is disposed above the connection electrode, the low-voltage connection structure of the organic light-emitting device that requires additional space may be disposed to overlap with the gate driving portion. This minimizes the bezel region, such that a user of the display device can use a device having an emission screen that is substantially aesthetically pleasingly displayed over the entire display device, and a display device with a better grip and light weight can be provided to the user by using a compact module with a narrow bezel.

[0024] Since the content of the present invention described in terms of the problem to be solved, the means for solving the problem, and the effects does not specify the basic features of the claims, the scope of the claims is not limited by the description in the content of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and, together with the specification, are used to explain the principles of the present disclosure. In the accompanying drawings:

[0026] Figure 1 is a plan view of a display panel according to an embodiment of the present disclosure;

[0027] Figure 2 is along Figure 1 a cross-sectional view of a display panel according to an embodiment taken along the cutting line I-I';

[0028] Figure 3 is along Figure 1 a cross-sectional view of a display panel according to another embodiment taken along the cutting line I-I';

[0029] Figure 4 is along Figure 1 a cross-sectional view of a display panel according to another embodiment taken along the cutting line I-I'; and

[0030] Figure 5 is a plan view of a display panel to which the connection structure of the application embodiment is applied. Detailed Embodiments

[0031] The advantages and technical features of the present disclosure and the methods for achieving the advantages and technical features will be clarified with reference to the embodiments described in detail below and the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below, but will be implemented in various different forms. The embodiments make the disclosure of the present disclosure complete and enable those of ordinary skill in the art to fully understand. The present disclosure is only defined by the scope of the claims.

[0032] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the accompanying drawings for describing the embodiments of the present invention are exemplary, and the present invention is not limited by the accompanying drawings. Throughout the specification, the same reference numerals refer to the same components. In addition, in the description of the present disclosure, when it is determined that the detailed description of related known technologies may unnecessarily obscure the subject matter of the present disclosure, the detailed description thereof will be omitted. When using 'comprises', 'has', 'includes', etc. in this specification, other parts may be added unless 'only' is used. When a component is expressed in the singular form, it includes the plural form unless otherwise stated.

[0033] When explaining components, even if not explicitly described, they are interpreted as including an error range.

[0034] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described as 'on', 'above', 'below', 'on one side', etc., unless 'exactly' or 'directly' is used, one or more other parts may be located between these two parts.

[0035] In the case of describing a temporal relationship, for example, when the chronological relationship is described as 'after', 'consecutive', 'next', 'before', etc., unless 'exactly' or 'directly' is used, discontinuous cases may be included.

[0036] The terms 'first','second', etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, within the technical spirit of the present disclosure, the first component mentioned below may be the second component.

[0037] When describing the components of the present disclosure, terms such as 'first','second', 'A', 'B', '(a)', '(b)', etc. may be used. These terms are only used to distinguish the component from other components, and the nature, order (turn), sequence, or number of the component are not limited by these terms. When a component is described as 'connected', 'combined', or 'contacted' to another component, the component is directly connected or contacted to the other component, but it should be understood that other components may be 'inserted' between these two components, or these two components may be 'connected', 'combined', or 'contacted' through other components.

[0038] In the present disclosure, a 'display device' may include a narrow sense display device having a display panel and a driving part for driving the display panel, for example, a liquid crystal module (LCM), an organic light emitting module (OLED module), and a quantum dot module (QD module). Additionally, the display device may include a complete product or a final product having an LCM, an OLED module, or a QD module, such as a notebook computer, a television, a computer monitor, an equipment display including an automotive display device or of different types of transportation means, an official (set) electronic device of a mobile electronic device such as a smart phone or an electronic pad, or an official device or an official equipment.

[0039] Therefore, the display device of the present disclosure may include the narrow sense display device itself such as an LCM, an OLED module, or a QD module, and an application product or an official device as a final consumer device including an LCM, an OLED module, or a QD module.

[0040] In addition, in some cases, an LCM, an OLED module, or a QD module including a display panel and a driving part may be represented as a narrow-sense "display device", and an electronic device as a complete product including an LCM, an OLED module, or a QD module may be separately represented as a "formal device". For example, the narrow-sense display device may include a display panel such as an LC panel, an OLED panel, or a QD panel and a source PCB as a control unit for driving the display panel, and the formal device may be a concept further including a formal PCB which is a formal control unit electrically connected to the source PCB to control the entire formal device.

[0041] The display panel used in the embodiments of the present disclosure may include all types of display panels such as a liquid crystal display panel, an organic light emitting diode display panel, a quantum dot display panel, or an electroluminescent display panel, and is not limited to a specific display panel with a bendable border having a flexible substrate for an OLED display panel in this embodiment and a backplane support structure thereunder. In addition, the display panel used in the embodiments of the present disclosure is not limited to the shape or size of the display panel.

[0042] For example, when the display panel is an OLED display panel, the display panel may include a plurality of gate lines and data lines and pixels formed at the crossing regions of the gate lines and the data lines. In addition, the display panel may be configured to include: an array including thin film transistors as elements for selectively applying a voltage to each pixel; an organic light emitting device (OLED) layer on the array; a package substrate or a package layer above the array to cover the organic light emitting device layer and the like. The package layer may protect the thin film transistors and the organic light emitting device layer from external impacts and prevent moisture or oxygen from penetrating into the organic light emitting device layer. In addition, an inorganic light emitting layer formed on the array may include, for example, a material layer or quantum dots of a nanoscale size.

[0043] Now, exemplary embodiments of the present disclosure will be described in detail, which are illustrated in the accompanying drawings.

[0044] In the present disclosure, Figure 1 an exemplary organic light emitting diode (OLED) display panel 100 that may be integrated in a display device is shown.

[0045] Figure 1 is a plan view of a display panel according to an embodiment of the present disclosure. Referring to Figure 1 , the OLED display panel 100 includes at least one active area AA in which a light emitting device and an array for driving the light emitting device are formed.

[0046] The display panel 100 may include a passive region disposed around the active region AA, and the top, bottom, left, and right sides of the active region AA may be referred to as passive regions. The active region AA may have a rectangular shape or may have a shape with grooves and rounded corners. Various types of display devices such as circular, elliptical, or polygonal ones may be applied to smartwatches or display devices for vehicles. Therefore, the arrangement of the passive region around the active region AA is not limited to Figure 1 the OLED display panel 100 shown in. Various components for driving the light-emitting devices and arrays formed in the active region AA are disposed in the passive regions on the left and right sides of the active region AA, thereby providing a function for stable light emission. For example, in the passive regions on the left and right sides of the active region AA, there may be: circuits such as an in-panel gate (GIP) circuit 300 and an electrostatic discharge (ESD) circuit 500; a contact region between an upper electrode or a cathode, which is part of the light-emitting device, and a low-voltage supply line (VSS) 410 that is a voltage reference point of the light-emitting device; and a plurality of dam structures that prevent overflow to the outside of the display panel 100 during the coating process of the particle compensation layer of the encapsulation layer for protecting the light-emitting device from external moisture or particles. In addition, a crack stopper structure 460 may be disposed to prevent cracks that may occur during the scribing process of dividing the mother glass into individual display panels 100 from being transferred to the inside of the display panel 100.

[0047] The crack stopper structure 460 of the present disclosure can prevent the impact generated at the trimming line of the substrate 110 during the scribing process from reaching and damaging the GIP circuit 300, the ESD circuit 500, or the low-voltage supply line 410 formed in the passive region or prevent a moisture penetration path from being provided to the light-emitting devices or arrays formed in the active region AA, so that the growth of dark spots or the generation of pixel shrinkage can be prevented.

[0048] The crack stopper structure 460 may be configured as an inorganic layer or an organic layer, or may be configured as a multi-layer structure of an inorganic layer and an organic layer, but is not limited thereto. In Figure 1 , it is shown that the crack stopper structure 460 is disposed in two long sides and one short side of the display panel 100, but is not limited thereto.

[0049] In a region adjacent to the trimming line of the substrate 110 outside the crack stopper structure 460, a part or all of an insulating layer such as a gate insulating layer (GI), a buffer layer, etc. deposited over the entire surface during the formation of the active region AA may be etched. A small amount of the insulating layer remains on the substrate 110, or the upper surface of the substrate 110 is completely exposed by etching, so that the trimming impact cannot be transferred to the corresponding insulating layer.

[0050] The display panel 100 according to the example may include: a thin film transistor array substrate including a plurality of pixels defined by a plurality of gate lines and a plurality of data lines, and thin film transistors provided in each pixel for driving each pixel; an organic light emitting device layer provided on the thin film transistor array substrate; and a encapsulation layer covering the organic light emitting device layer. Here, the encapsulation layer protects the thin film transistors and the organic light emitting device layer from external impacts and prevents moisture from penetrating into the organic light emitting device layer.

[0051] Referring Figure 1 , an FPCB having an external power supply may be provided in the lower region of the display panel 100, and the FPCB is electrically connected to pads 450 formed to receive data driving signals or exchange touch signals. A high voltage supply (VDD) line 420, a low voltage supply (VSS) line 410, and / or a data voltage line extending from the FPCB may be arranged. The low voltage supply line 410 is used to form a reference voltage for devices in the active area AA, and may be arranged to surround the active area AA to reduce impedance. The low voltage supply line 410 may be arranged to surround three sides of the active area AA except for the side where the pad 450 is arranged, and may have a connection structure for connecting to the upper electrode.

[0052] The data voltage line of the present disclosure may be arranged to be connected to a data driver IC that generates a light emitting signal of the light emitting device.

[0053] The area where the above pads 450 are arranged may be a second component forming part. A part of the low voltage supply line 410 and the high voltage supply line 420 may be arranged in the second component forming part.

[0054] The member connected to the pad 450 formed on the upper surface of the display panel 100 is not limited to the FPCB, various members may be connected, and the pad 450 may be arranged on the upper surface or the rear surface of the display panel 100.

[0055] The substrate 110 serving as the basis of the display panel 100 may be formed of various materials such as glass, metal, or plastic. When the substrate 110 is a flexible substrate, the substrate 110 may include a polymer resin such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC), or cellulose acetate propionate (CAP). Additionally, the substrate 110 may have a structure including two plastic substrates and an inorganic layer between the two plastic substrates. These two plastic substrates may include the polymer resins mentioned above and may have the same thickness or different thicknesses. For example, each of the two plastic substrates may include polyimide and may have a thickness of 3 μm to 20 μm. The inorganic layer is a barrier layer that prevents the penetration of particles from the outside and may be a single layer or multiple layers including inorganic materials such as silicon nitride (SiNx) and / or silicon oxide (SiOx). The inorganic layer may have a thickness of about but is not limited thereto.

[0056] Figure 2 shows Figure 1 a cross-section of the cutting line I-I'. The thin film transistor 200 is disposed in the active region AA of the substrate 110. In addition to the thin film transistor 200, a display device electrically connected to the thin film transistor 200 may be disposed. In Figure 2 , an organic light emitting device is shown as the display device. Hereinafter, a display panel 100 according to an embodiment of the present disclosure including an organic light emitting device as the display device will be described. The fact that the organic light emitting device as the display device is electrically connected to the thin film transistor 200 may be understood as that the anode 240 included in the organic light emitting device is electrically connected to the thin film transistor 200. The thin film transistor 200 may also be disposed in the passive region IA at the periphery of the substrate 110. The thin film transistor 200 disposed in the passive region IA may be a part of a circuit portion for controlling an electrical signal applied to the active region AA.

[0057] The thin film transistor 200 includes: a semiconductor layer 210 including amorphous silicon, polysilicon, or an organic semiconductor material; a gate electrode 220; and a source electrode / drain electrode 230. A buffer layer 120 formed of silicon oxide, silicon nitride, or silicon oxynitride may be disposed on the substrate 100 to planarize the surface of the substrate 110 or prevent impurities from penetrating the semiconductor layer 210, and the semiconductor layer 210 may be disposed on the buffer layer 120.

[0058] The gate electrode 220 may be disposed over the semiconductor layer 210. The gate electrode 220 may be formed of one or more of the following: for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and considering the adhesion to adjacent layers, the surface flatness of the layers to be stacked, and processability, the gate electrode 220 may be a single layer or a multi-layer. At this time, a gate insulating layer 130 formed of silicon oxide, silicon nitride, or silicon oxynitride may be inserted between the semiconductor layer 210 and the gate electrode 220 to ensure insulation between the semiconductor layer 210 and the gate electrode 220. An inorganic insulating layer 140 may be disposed over the gate electrode 220. The inorganic insulating layer 140 may be formed of silicon oxide, silicon nitride, or silicon oxynitride, and may be a single layer or a multi-layer.

[0059] A source electrode / drain electrode 230 is disposed over the inorganic insulating layer 140. The source electrode / drain electrode 230 is electrically connected to the semiconductor layer 210 through respective contact holes formed in the inorganic insulating layer 140 and the gate insulating layer 130.

[0060] The source electrode / drain electrode 230 may be formed of one or more of the following: for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and considering conductivity, may be a single layer or a multi-layer.

[0061] A passivation layer (not shown) covering the thin film transistor 200 may be disposed to protect the thin film transistor 200 having such a structure. The passivation layer may be formed of an inorganic material such as, for example, silicon oxide, silicon nitride, or silicon oxynitride. The passivation layer may be a single layer or a multi-layer.

[0062] A planarization layer 150 may be disposed over the passivation layer. For example, when an organic light emitting device is disposed over the thin film transistor 200 as shown in Figure 2 the planarization layer 150 may be used to substantially planarize the upper portion of the passivation layer covering the thin film transistor 200. The planarization layer 150 may include an organic material, which includes, for example, general polymers such as polymethyl methacrylate (PMMA) or polystyrene (PS), polymer derivatives having a phenolic group, acrylic-based polymers, imide-based polymers, aryl ether-based polymers, amide-based polymers, fluorine-based polymers, parylene polymers, vinyl alcohol-based polymers, and blends thereof, but is not limited thereto. Additionally, although in Figure 2The middle planarization layer 150 is shown as a single layer, but various modifications such as multiple layers are possible. The display panel according to an embodiment of the present disclosure may have a passivation layer and the planarization layer 150, or may have the planarization layer 150 as needed. The planarization layer 150 may be referred to as a first insulating layer.

[0063] In the active region AA of the substrate 110, the organic light-emitting device includes an anode electrode 240, a cathode electrode 250, and a light-emitting layer interposed therebetween. Herein, the organic light-emitting device is described as including an organic material layer of the light-emitting layer, but more broadly, it can be considered to include the anode electrode 240 and the cathode electrode 250 as essential elements for light emission.

[0064] The planarization layer 150 includes an opening portion that exposes at least one of the source electrode / drain electrode 230 of the thin-film transistor 200, and the anode electrode 240 electrically connected to one of the source electrode / drain electrode 230 through the opening portion is disposed on the planarization layer 150. The anode electrode 240 may be formed of a conductive material having a relatively high work function. The anode electrode 240 may be a (semi)transparent electrode or a reflective electrode. When the anode electrode 240 is a (semi)transparent electrode, the anode electrode 240 may include, for example, ITO, IZO, ZnO, In 2 O 3 , IGO, or AZO. When the anode electrode 240 is a reflective electrode, the anode electrode 240 may include a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or an alloy thereof, and a layer formed of ITO, IZO, ZnO, In 2 O 3 , IGO, or AZO. However, the present disclosure is not limited thereto. The anode electrode 240 may include various materials and may have a single-layer or multi-layer structure. Various modifications can be made. Although it is described as the anode electrode 240 in the present embodiment, it may be referred to as a pixel electrode or a first electrode.

[0065] A bank layer 160 may be disposed on the planarization layer 150. The bank layer 160 is used to define pixels by having openings corresponding to each sub-pixel, that is, openings through which at least the central portion of the anode electrode 240 is exposed. Additionally, as Figure 2 shown, the bank layer 160 increases the distance between the edge of the anode electrode 240 and the cathode electrode above the anode electrode 240, such that the bank layer 160 is used to prevent arcing at the edge of the anode electrode 240. The bank layer 160 may be formed of an organic material such as polyimide or hexamethyldisiloxane (HMDSO), for example. The bank layer 160 may be referred to as a second insulating layer or a pixel defining layer.

[0066] The intermediate layer of the organic light-emitting device may include low molecular weight or high molecular weight materials. When the intermediate layer includes low molecular weight materials, the intermediate layer may have the following structure: where a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), etc. are stacked one by one or complexly, and the intermediate layer may include various organic materials, such as copper phthalocyanine (CuPc), N,N-bis(naphthalen-1-yl)-N,N'-diphenyl-benzidine (N,N'-bis(naphthalen-1-yl)-N,N'-diphenyl-benzidine: NPB), tris(8-hydroxyquinoline)aluminum (Alq3), etc. These layers can be formed by vacuum evaporation method.

[0067] When the intermediate layer includes high molecular weight materials, the intermediate layer may have a structure including a hole transport layer (HTL) and an emission layer (EML). At this time, the hole transport layer may include PEDOT, and the emission layer may include polymer materials such as PPV (poly(phenylene vinylene)) and polyfluorene. The intermediate layer can be formed by screen printing or inkjet printing method or laser-induced thermal imaging method.

[0068] However, the intermediate layer is not necessarily limited to this, and may have various structures.

[0069] The cathode electrode 250 is disposed above the active region AA, and as Figure 2 shown, the cathode electrode 250 can be disposed to cover the active region AA. That is, the cathode electrode 250 can be formed integrally with respect to a plurality of organic light-emitting devices, and can correspond to a plurality of anode electrodes 240. The cathode electrode 250 can be a (semi)transparent electrode or a reflective electrode.

[0070] When the cathode electrode 250 is a (semi)transparent electrode, the cathode electrode 250 may have a layer formed of a metal having a relatively low work function, such as Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg or an alloy thereof, and a (semi)transparent conductive layer formed of ITO, IZO, ZnO, In 2 O 3 formed. When the cathode electrode 250 is a reflective electrode, the cathode electrode 250 may have a layer formed of Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg or an alloy thereof. However, the structure and material of the cathode electrode 250 are not limited to this, and various modifications can be made.

[0071] Since a display device such as an organic light-emitting device includes a cathode electrode 250, a predetermined electrical signal needs to be applied to the cathode electrode 250 in order to display an image. Therefore, the low voltage supply line 410 is located in the inactive area IA to transmit the predetermined electrical signal to the cathode electrode 250. Although described as the cathode electrode 250 in the present embodiment, it may be referred to as a cathode, an opposing electrode, an upper electrode, or a second electrode.

[0072] Reference Figure 2 , you can see along Figure 1 A cross section of the inactive area IA arranged on one side of the active area AA of the cutting line II'. In the inactive area IA, the gate driving part 300, the plurality of dam structures 170 and the crack stopping structure 460 may be arranged in sequence adjacent to the active area AA. The gate driving part 300 may be a GIP circuit. The gate driving part 300 may include an emission signal driving unit 310, a scan signal driving unit 320 and a linking unit 330. The circuit configuration may vary according to the configuration of the organic light-emitting device, and the gate driving part 300 may transmit at least one emission control signal and at least one scan control signal to a sub-pixel including the organic light-emitting device. The linking unit 330 may be arranged between the emission signal driving unit 310 and the organic light-emitting device and between the scan signal driving unit 320 and the organic light-emitting device for transmitting signals. Each of the emission signal driving unit 310 and the scan signal driving unit 320 may include a plurality of transistors and at least one capacitor.

[0073] As described in the active area AA, the planarization layer 150 may be disposed on the gate driving part 300, and a metal layer formed of the same material as the anode electrode 240 may be disposed on the planarization layer 150. The metal layer formed of the same material as the anode electrode 240 may be referred to as a connection electrode 740. At least one degassing pattern 750 may be provided in the connection electrode 740. The degassing pattern 750 may be disposed in the inactive area IA and may have a structure for discharging hydrogen (H 2 ) pore shape, the hydrogen (H 2 ) may be generated in the planarization layer 150 during a heat treatment process in a process for manufacturing the display panel 100. The connection electrode 740 and the degassing pattern 750 may overlap the gate driving portion 300 of the inactive area IA in at least some sections. The bank layer 160 disposed in the active area AA may extend over the connection electrode 740 in the inactive area IA. The cathode electrode 250 disposed in the active area AA may extend over the bank layer 160 in the inactive area IA.

[0074] Reference Figure 2, the gate driving part 300 includes a transmission signal driving unit 310 and a scan signal driving unit 320. For example, the transmission signal driving unit 310 may be disposed outside the scan signal driving unit 320. That is to say, the scan signal driving unit 320 may be disposed between the transmission signal driving unit 310 and the active region AA. However, the positions of the transmission signal driving unit 310 and the scan signal driving unit 320 are not limited thereto. To prevent moisture from penetrating from the outside, an isolation structure may be formed between the transmission signal driving unit 310 and the scan signal driving unit 320 to disconnect a part of the planarization layer 150 and the bank layer 160 which are the main paths of moisture. For example, the planarization layer 150 and the bank layer 160 may be etched to form holes exposing the inorganic insulating layer 140 or the gate insulating layer 130. External moisture passing through the planarization layer 150 and the bank layer 160 cannot move at the etched part. The connection electrode 740 and the cathode electrode 250 may be disposed on the holes. The structure in which the connection electrode 740 and the cathode electrode 250 are disposed in the etched parts of the planarization layer 150 and the bank layer 160 and are connected to each other may be the contact area 600. The contact area 600 may include a contact guarantee area 610 and a contact hole 620. The cathode electrode 250 and the connection electrode 740 may be in electrical contact with each other through the contact area 600, and the connection electrode 740 may extend to the periphery of the passive region IA to be connected to the low voltage supply line 410. A plurality of dam structures 170 may be disposed near the area where the connection electrode 740 and the low voltage supply line 410 are connected. The plurality of dam structures 170 may form a packaging layer to prevent the penetration of external moisture after the organic light emitting device is formed. The dam structures 170 may prevent the organic layer of the packaging layer from flowing downward to the periphery of the substrate 110. The above-mentioned crack prevention structure 460 may be disposed at a predetermined distance from the plurality of dam structures 170 toward the periphery of the substrate 110.

[0075] To prevent the penetration of external moisture, the contact area 600 may be used to cut off the organic insulating layer which is the main path of moisture penetration, so as to disconnect the extension of the organic insulating layer to the active region AA. In addition, the electrical connection point of the cathode electrode 250 and the connection electrode 740 may be moved from the outside of the gate driving part 300 to the inside. The electrical connection point of the cathode electrode 250 and the connection electrode 740 disposed outside the gate driving part 300 may be moved to the inside of the gate driving part 300, so that the space occupied by the border area can be reduced. The contact area 600 may be disposed to overlap with the area where the gate driving part 300 is disposed, and thus the plurality of dam structures 170 and the crack prevention structure 460 may be disposed closer to the active region AA.

[0076] The contact region 600 may have a stepped structure such that the cathode electrode 250 and the connection electrode 740 can be in good contact with each other. For example, the width of the first isolation structure for disconnecting the planarization layer 150 may be different from the width of the second isolation structure for disconnecting the dam layer 160. The width of the second isolation structure of the dam layer 160 may be wider than the width of the first isolation structure of the planarization layer 150 such that the connection electrode 740 can be formed along the first isolation structure of the planarization layer 150. As Figure 2 shown, when the cathode electrode 250 is formed along the second isolation structure of the dam layer 160, it can be seen that the connection electrode 740 and the cathode electrode 250 can have a certain stepped shape and be in contact with each other. The region where the width of the first isolation structure of the planarization layer 150 is different from the width of the second isolation structure of the dam layer 160 may be referred to as the contact assurance region 610. If the planarization layer 150 and the dam layer 160 are etched simultaneously, the process may be simple. However, the connection electrode 740 and the cathode electrode 250 may have to be connected to each other through the vertical sidewalls of the isolation structure. Additionally, the bottom region of the isolation structure may be very narrow. For example, considering that a residual layer may be left in the planarization layer 150 when the first isolation structure of the planarization layer 150 is formed, over-etching may be performed until the inorganic insulating layer 140 below the planarization layer 150. At this time, the isolation structure of the etched inorganic insulating layer 140 may be formed to be small. When considering that the cathode electrode 250 is formed to be very thin to a thickness of about 100 to , the cathode electrode 250 and the connection electrode 740 may not be in stable electrical contact with each other through the sidewalls or the bottom of the isolation structure. In order to stably contact the cathode electrode 250 and the connection electrode 740, the contact assurance region 610 may be arranged. The isolation structures of the planarization layer 150 and the dam layer 160 may be formed separately through respective processes. By making the centers or the widths of the isolation structures different, a portion where the connection electrode 740 is formed flat on the planarization layer 150 can be formed. When the cathode electrode 250 is formed on the portion where the connection electrode 740 is formed flat, more stable contact can be achieved.

[0077] The contact assurance region 610 may be arranged near the active region AA with respect to the center of the contact region 600. The closer the contact between the cathode electrode 250 and the connection electrode 740 is to the active region AA, the more beneficial it is to the impedance of the cathode electrode 250 and the contact point between the cathode electrode 250 and the connection electrode 740 is protected from the penetration of external moisture.

[0078] The contact area 600 may be disposed between the emission signal driving unit 310 and the scan signal driving unit 320 of the gate driving part 300. Since the contact area 600 is as close to the active area AA as the space of the emission signal driving unit 310, there are the following advantages: the space of the border area can be saved and the penetration of external moisture can be prevented at the periphery of the gate driving part 300. However, for the spatial layout, it is necessary to change the design of the gate driving part 300 and partially adjust the distance between the emission signal driving unit 310 and the scan signal driving unit 320 so as to dispose the contact area 600.

[0079] Referring to Figure 1 , the contact area 600 may be disposed on the left and right sides of the gate driving part 300 disposed in the active area AA. In addition, the contact area 600 may be disposed on the upper side of the active area AA and on the lower side of the active area AA where the pad 450 is disposed. On the other hand, since the gate driving part 300 may not be disposed on the upper and lower sides of the active area AA, the contact area 600 may be freely designed on the upper and lower sides of the active area AA regardless of the position of the gate driving part 300.

[0080] Figure 3 shows a cross-section of the passive area IA disposed on one side of the active area AA along the Figure 1 cutting line I-I'. Figure 3 The description of the active area of Figure 2 is the same as the description of the active area of Figure 3, in the passive region IA, 0 can be arranged adjacent to the active region AA in sequence with the gate driving part 300, a plurality of dam structures 170, and the crack prevention structure 46. The gate driving part 300 can be a GIP circuit. The gate driving part 300 can include a transmit signal driving unit 310, a scan signal driving unit 320, and a link unit 330. The circuit configuration can vary according to the configuration of the organic light emitting device, and the gate driving part 300 can transmit at least one emission control signal and at least one scan control signal to the sub-pixels including the organic light emitting device. The link unit 330 can be disposed between the transmit signal driving unit 310 and the organic light emitting device and between the scan signal driving unit 320 and the organic light emitting device for signal transmission. Each of the transmit signal driving unit 310 and the scan signal driving unit 320 can include a plurality of transistors and at least one capacitor. As described in the active region AA, the planarization layer 150 can be disposed on the gate driving part 300, and a metal layer formed of the same material as the anode electrode 240 can be disposed on the planarization layer 150. The metal layer formed of the same material as the anode electrode 240 can be referred to as the connection electrode 740. At least one degassing pattern 750 can be provided in the connection electrode 740. The degassing pattern 750 can be disposed in the passive region IA and can have a hole shape for discharging hydrogen (H 2 ), and this hydrogen (H 2 ) may be generated in the planarization layer 150 during the heat treatment process of the process for manufacturing the display panel 100. The connection electrode 740 and the degassing pattern 750 can overlap with the gate driving part 300 of the passive region IA in at least some sections. The bank layer 160 disposed in the active region AA can extend above the connection electrode 740 in the passive region IA. The cathode electrode 250 disposed in the active region AA can extend above the bank layer 160 in the passive region IA.

[0081] Referring to Figure 3, the gate driving part 300 includes a transmission signal driving unit 310 and a scanning signal driving unit 320, and for example, the transmission signal driving unit 310 may be disposed outside the scanning signal driving unit 320. That is to say, the scanning signal driving unit 320 may be disposed between the transmission signal driving unit 310 and the active region AA. However, the positions of the transmission signal driving unit 310 and the scanning signal driving unit 320 are not limited thereto. To prevent moisture from penetrating from the outside, an isolation structure may be formed between the scanning signal driving unit 320 and the linking unit 330 to disconnect a part of the planarization layer 150 and the bank layer 160 which are the main paths of moisture. For example, the planarization layer 150 and the bank layer 160 may be etched to form holes exposing the inorganic insulating layer 140 or the gate insulating layer 130. External moisture passing through the planarization layer 150 and the bank layer 160 cannot move at the etched part. The connection electrode 740 and the cathode electrode 250 may be disposed on the holes. The structure in which the connection electrode 740 and the cathode electrode 250 are disposed in the etched parts of the planarization layer 150 and the bank layer 160 and are connected to each other may be the contact region 600. The contact region 600 may include a contact guarantee region 610 and a contact hole 620. The cathode electrode 250 and the connection electrode 740 may be electrically contacted with each other through the contact region 600, and the connection electrode 740 may extend to the periphery of the passive region IA to be connected to the low voltage supply line 410. A plurality of dam structures 170 may be disposed near the region where the connection electrode 740 and the low voltage supply line 410 are connected. The plurality of dam structures 170 may form a packaging layer to prevent the penetration of external moisture after the organic light-emitting device is formed. The dam structures 170 may prevent the organic layer of the packaging layer from flowing downward to the periphery of the substrate 110. The above-mentioned crack prevention structure 460 may be disposed at a predetermined distance from the plurality of dam structures 170 facing the periphery of the substrate 110.

[0082] To prevent the penetration of external moisture, the contact region 600 may be used to cut off the organic insulating layer which is the main path of moisture penetration, so as to disconnect the extension of the organic insulating layer to the active region AA. In addition, the electrical connection point of the cathode electrode 250 and the connection electrode 740 may be moved from the outside of the gate driving part 300 to the inside. The electrical connection point of the cathode electrode 250 and the connection electrode 740 disposed outside the gate driving part 300 may be moved to the inside of the disposed gate driving part 300, so that the space occupied by the border region can be reduced. The contact region 600 may be disposed to overlap with the region where the gate driving part 300 is disposed, and therefore the plurality of dam structures 170 and the crack prevention structure 460 may be disposed closer to the active region AA.

[0083] The contact area 600 may have a stepped structure such that the cathode electrode 250 and the connection electrode 740 can be in good contact with each other. For example, the width of the first isolation structure for disconnecting the planarization layer 150 may be different from the width of the second isolation structure for disconnecting the dam layer 160. The width of the second isolation structure of the dam layer 160 may be wider than the width of the first isolation structure of the planarization layer 150, so that the connection electrode 740 can be formed along the first isolation structure of the planarization layer 150. As Figure 3 shown, when the cathode electrode 250 is formed along the second isolation structure of the dam layer 160, it can be seen that the connection electrode 740 and the cathode electrode 250 can have a certain stepped shape and be in contact with each other. The region where the width of the first isolation structure of the planarization layer 150 is different from the width of the second isolation structure of the dam layer 160 may be referred to as the contact assurance region 610. If the planarization layer 150 and the dam layer 160 are etched simultaneously, the process may be simple. However, the connection electrode 740 and the cathode electrode 250 may have to be connected to each other through the vertical sidewalls of the isolation structure. Additionally, the bottom region of the isolation structure may be very narrow. For example, considering that a residual layer may be left in the planarization layer 150 when the first isolation structure of the planarization layer 150 is formed, over-etching may be performed until the inorganic insulating layer 140 below the planarization layer 150. At this time, the isolation structure of the etched inorganic insulating layer 140 may be formed to be small. When considering that the cathode electrode 250 is formed to be very thin to about 100 to a thickness of, the cathode electrode 250 and the connection electrode 740 may not be able to be in stable electrical contact with each other through the sidewalls or the bottom of the isolation structure. In order to stably contact the cathode electrode 250 and the connection electrode 740, the contact assurance region 610 may be arranged. The isolation structures of the planarization layer 150 and the dam layer 160 may be formed separately through respective processes. By making the center or the width of the isolation structure different, a portion where the connection electrode 740 is formed flat on the planarization layer 150 can be formed. When the cathode electrode 250 is formed on the portion where the connection electrode 740 is formed flat, more stable contact can be achieved.

[0084] The contact assurance region 610 may be arranged near the active region AA with respect to the center of the contact area 600. The closer the contact between the cathode electrode 250 and the connection electrode 740 is to the active region AA, the more beneficial it is to the impedance of the cathode electrode 250, and it protects the contact point between the cathode electrode 250 and the connection electrode 740 from the penetration of external moisture.

[0085] The contact area 600 may be disposed between the scan signal driving unit 320 and the link unit 330 of the gate driving part 300. Since the contact area 600 is as close to the active area AA as the spaces of the emission signal driving unit 310 and the scan signal driving unit 320, there are the following advantages: the space of the border area can be saved and the penetration of external moisture can be prevented in the middle of the gate driving part 300. Since compared with Figure 2 the contact area 600 is closer to the active area AA, the penetrated moisture can spread to the area relatively closer to the organic light emitting device. However, compared with Figure 2 in terms of the resistance of the display panel 100, it may be advantageous for the cathode electrode 250 to be in contact with the connection electrode 740 near the active area AA. For example, the connection electrode 740 having an impedance lower than that of the cathode electrode 250 may have a longer distance than the structure of Figure 2 so as to reduce the total impedance of the low voltage supply line 410.

[0086] Referring to Figure 1 , the contact area 600 may be disposed on the left and right sides of the gate driving part 300 arranged in the active area AA. In addition, the contact area 600 may be disposed on the upper side of the active area AA and the lower side of the active area AA where the pad 450 is arranged. On the other hand, since the gate driving part 300 may not be disposed on the upper and lower sides of the active area AA, the contact area 600 can be freely designed on the upper and lower sides of the active area AA regardless of the position of the gate driving part 300.

[0087] Figure 4 shows a cross section of the passive area IA disposed on one side of the active area AA along the cutting line I-I’ of Figure 1 . Figure 4 The description of the active area of Figure 2 and Figure 3 is the same as the description of the active area of Figure 4, in the passive region IA, a gate driving part 300, a plurality of dam structures 170, and a crack prevention structure 460 may be sequentially arranged adjacent to the active region AA. The gate driving part 300 may be a GIP circuit. The gate driving part 300 may include a transmit signal driving unit 310, a scan signal driving unit 320, and a link unit 330. The circuit configuration may vary according to the configuration of the organic light emitting device, and the gate driving part 300 may transmit at least one emission control signal and at least one scan control signal to sub-pixels including the organic light emitting device. The link unit 330 may be disposed between the transmit signal driving unit 310 and the organic light emitting device and between the scan signal driving unit 320 and the organic light emitting device for signal transmission. Each of the transmit signal driving unit 310 and the scan signal driving unit 320 may include a plurality of transistors and at least one capacitor. As described in the active region AA, a planarization layer 150 may be disposed on the gate driving part 300, and a metal layer formed of the same material as the anode electrode 240 may be disposed on the planarization layer 150. The metal layer formed of the same material as the anode electrode 240 may be referred to as a connection electrode 740. At least one degassing pattern 750 may be provided in the connection electrode 740. The degassing pattern 750 may be disposed in the passive region IA and may have a hole shape for discharging hydrogen (H 2 ), and the hydrogen (H 2 ) may be generated in the planarization layer 150 during the heat treatment process of the process for manufacturing the display panel 100. The connection electrode 740 and the degassing pattern 750 may overlap the gate driving part 300 of the passive region IA in at least some sections. The bank layer 160 disposed in the active region AA may extend above the connection electrode 740 in the passive region IA. The cathode electrode 250 disposed in the active region AA may extend above the bank layer 160 in the passive region IA.

[0088] Refer to Figure 4, the gate driving part 300 includes a transmission signal driving unit 310 and a scanning signal driving unit 320. For example, the transmission signal driving unit 310 may be disposed outside the scanning signal driving unit 320. That is, the scanning signal driving unit 320 may be disposed between the transmission signal driving unit 310 and the active region AA. However, the positions of the transmission signal driving unit 310 and the scanning signal driving unit 320 are not limited thereto. To prevent the penetration of moisture from the outside, an isolation structure may be formed between the link unit 330 and the active region AA to disconnect a part of the planarization layer 150 and the bank layer 160 which are the main paths of moisture. For example, the planarization layer 150 and the bank layer 160 may be etched to form holes exposing the inorganic insulating layer 140 or the gate insulating layer 130. The external moisture passing through the planarization layer 150 and the bank layer 160 cannot move at the etched part. The connection electrode 740 and the cathode electrode 250 may be disposed on the holes. The structure in which the connection electrode 740 and the cathode electrode 250 are disposed in the etched parts of the planarization layer 150 and the bank layer 160 and are connected to each other may be the contact region 600. The contact region 600 may include a contact guarantee region 610 and a contact hole 620. The cathode electrode 250 and the connection electrode 740 may be electrically contacted with each other through the contact region 600, and the connection electrode 740 may extend to the periphery of the passive region IA to be connected to the low voltage supply line 410. A plurality of dam structures 170 may be disposed near the region where the connection electrode 740 and the low voltage supply line 410 are connected. The plurality of dam structures 170 may form a packaging layer to prevent the penetration of external moisture after the organic light emitting device is formed. The dam structure 170 may prevent the organic layer of the packaging layer from flowing downward to the periphery of the substrate 110. The above-mentioned crack prevention structure 460 may be disposed at a predetermined distance from the plurality of dam structures 170 toward the periphery of the substrate 110.

[0089] To prevent the penetration of external moisture, the contact region 600 may be used to cut off the organic insulating layer which is the main path of moisture penetration, so as to disconnect the extension of the organic insulating layer to the active region AA. In addition, the electrical connection point of the cathode electrode 250 and the connection electrode 740 may be moved from the outside of the gate driving part 300 to the inside. The electrical connection point of the cathode electrode 250 and the connection electrode 740 disposed outside the gate driving part 300 may be moved to the inside of the disposed gate driving part 300, so that the space occupied by the border region can be reduced. The contact region 600 may be disposed to overlap with the region where the gate driving part 300 is disposed, and thus the plurality of dam structures 170 and the crack prevention structure 460 may be disposed closer to the active region AA.

[0090] The contact area 600 may have a stepped structure such that the cathode electrode 250 and the connection electrode 740 can be in good contact with each other. For example, the width of the first isolation structure for disconnecting the planarization layer 150 may be different from the width of the second isolation structure for disconnecting the dam layer 160. The width of the second isolation structure of the dam layer 160 may be wider than the width of the first isolation structure of the planarization layer 150 such that the connection electrode 740 can be formed along the first isolation structure of the planarization layer 150. As Figure 4 shown, when the cathode electrode 250 is formed along the second isolation structure of the dam layer 160, it can be seen that the connection electrode 740 and the cathode electrode 250 may have a certain stepped shape and be in contact with each other. The region where the width of the first isolation structure of the planarization layer 150 is different from the width of the second isolation structure of the dam layer 160 may be referred to as the contact assurance region 610. If the planarization layer 150 and the dam layer 160 are etched simultaneously, the process may be simple. However, the connection electrode 740 and the cathode electrode 250 may have to be connected to each other through the vertical sidewalls of the isolation structure. Additionally, the bottom region of the isolation structure may be very narrow. For example, considering that a residual layer may be left in the planarization layer 150 when the first isolation structure of the planarization layer 150 is formed, over-etching may be performed until the inorganic insulating layer 140 below the planarization layer 150. At this time, the isolation structure of the etched inorganic insulating layer 140 may be formed to be small. When considering that the cathode electrode 250 is formed to be very thin to a thickness of about 100 to the thickness, the cathode electrode 250 and the connection electrode 740 may not be in stable electrical contact with each other through the sidewalls or the bottom of the isolation structure. In order to stably contact the cathode electrode 250 and the connection electrode 740, the contact assurance region 610 may be arranged. The isolation structures of the planarization layer 150 and the dam layer 160 may be formed by respective processes. By making the centers or the widths of the isolation structures different, a portion where the connection electrode 740 is formed flat on the planarization layer 150 can be formed. When the cathode electrode 250 is formed on the portion where the connection electrode 740 is formed flat, more stable contact can be achieved.

[0091] The contact assurance region 610 may be arranged near the active region AA with respect to the center of the contact area 600. The closer the contact between the cathode electrode 250 and the connection electrode 740 is to the active region AA, the more beneficial it is to the impedance of the cathode electrode 250, and it protects the contact point between the cathode electrode 250 and the connection electrode 740 from the penetration of external moisture.

[0092] The contact region 600 may be disposed between the link unit 330 of the gate driving part 300 and the active region AA. Since the contact region 600 is as close to the active region AA as the space of the gate driving part 300, there are the following advantages: the space of the border region can be saved and the penetration of external moisture can be prevented around the gate driving part 300, that is, between the gate driving part 300 and the active region AA. Since compared with Figure 2 and Figure 3 , the contact region 600 is closer to the active region AA, the penetrated moisture can spread to the region close to the organic light-emitting device. However, compared with Figure 2 and Figure 3 , in terms of the resistance of the display panel 100, it may be advantageous for the cathode electrode 250 to contact the connection electrode 740 near the active region AA. For example, the connection electrode 740 having an impedance lower than that of the cathode electrode 250 may have a longer distance than the structures of Figure 2 and Figure 3 , thereby reducing the total impedance of the low-voltage supply line 410. In addition, since the contact region 600 is formed in a relatively large region between the gate driving part 300 and the active region AA, it can be minimized to change the design of the gate driving part 300. Furthermore, the space of the border can be saved to the greatest extent, thereby realizing an extreme design of a narrow border.

[0093] Referring to Figure 1 , the contact region 600 may be disposed to surround four sides of the active region AA.

[0094] Figure 5 shows the contact region 600 omitted in Figure 1 on the plane of the display panel 100. The contact region 600 may be disposed on the left and right sides of the active region AA where the gate driving part 300 is arranged, but is not limited thereto. For example, the contact region 600 may also be disposed on the upper and lower sides of the active region AA, thereby surrounding the four sides of the active region AA.

[0095] The display device according to an embodiment of the present disclosure includes a liquid crystal display device (LCD), a field emission display device (FED), an organic light-emitting display device (OLED), and a quantum dot display device.

[0096] The display device according to an embodiment of the present disclosure may include a complete product or a final product having an LCM or an OLED module, such as a laptop computer, a television, a computer monitor, an equipment display device including an automotive display device or a display device of different types of transportation means, an official electronic device device such as a smart phone or an electronic tablet, or an official device or an official equipment.

[0097] A display device according to an embodiment of the present disclosure can be described as follows.

[0098] A display device according to an embodiment of the present disclosure may include: a display panel including an active region, a passive region disposed around the active region, and a connection region disposed in the passive region, wherein the active region may include an anode electrode, a light-emitting layer, and a cathode electrode, wherein the passive region may include a gate driving portion and a crack prevention pattern, and wherein the connection region may be disposed adjacent to the gate driving portion, and the cathode electrode and a connection electrode disposed above the gate driving portion may be in contact with each other in the connection region.

[0099] In a display device according to an embodiment of the present disclosure, the anode electrode and the connection electrode may be formed of the same material.

[0100] In a display device according to an embodiment of the present disclosure, the gate driving portion may include a transmit signal driving unit, a scan signal driving unit, and a link unit.

[0101] In a display device according to an embodiment of the present disclosure, the connection region may be disposed between the transmit signal driving unit and the scan signal driving unit.

[0102] In a display device according to an embodiment of the present disclosure, the connection region may include a contact hole and a connection assist region.

[0103] In a display device according to an embodiment of the present disclosure, the connection assist region may be disposed between the contact hole and the active region.

[0104] In a display device according to an embodiment of the present disclosure, the connection region may be disposed between the scan signal driving unit and the link unit.

[0105] In a display device according to an embodiment of the present disclosure, the connection region may be disposed between the link unit and the active region.

[0106] In a display device according to an embodiment of the present disclosure, the passive region may further include a low voltage supply line and a dam structure, and the connection electrode may be connected to the low voltage supply line in a region adjacent to the dam structure.

[0107] In a display device according to an embodiment of the present disclosure, the passive region may include a bank layer and a planarization layer extending from the active region, and the connection region may include a first portion removing the planarization layer and a second portion removing the bank layer in the passive region.

[0108] In a display device according to an embodiment of the present disclosure, the first portion and the second portion may have different widths.

[0109] A display device according to an embodiment of the present disclosure may include: a display panel including an active region and a passive region; an active region including thin film transistors, on which a planarization layer, a first electrode, a bank layer, a light-emitting layer, and a second electrode are sequentially disposed; a passive region including a gate driving part, a dam structure, and a crack prevention structure; and a connection region in which a connection electrode disposed on the gate driving part is connected to an extension of the second electrode.

[0110] In a display device according to an embodiment of the present disclosure, the gate driving part may include a transmit signal driving unit, a scan signal driving unit, and a link unit, and the connection region may be disposed between the transmit signal driving unit and the scan signal driving unit.

[0111] In a display device according to an embodiment of the present disclosure, the gate driving part may include a transmit signal driving unit, a scan signal driving unit, and a link unit, and the connection region may be disposed between the scan signal driving unit and the link unit.

[0112] In a display device according to an embodiment of the present disclosure, the connection region may include a first part and a second part, wherein the first part has a first width, and the second part has a second width, and wherein the first width and the second width are different from each other, and due to the difference between the first width and the second width, the connection region further includes a connection auxiliary region, which is disposed on the planarization layer exposed in the region where the bank layer is removed.

[0113] In a display device according to an embodiment of the present disclosure, the connection auxiliary region may be disposed closer to the active region than the center of the connection region.

[0114] In a display device according to an embodiment of the present disclosure, the first electrode and the connection electrode may be formed of the same material.

[0115] In a display device according to an embodiment of the present disclosure, the passive region may further include a low-voltage supply line, wherein at least a part of the low-voltage supply line is disposed below the dam structure, and the connection electrode may be connected to the low-voltage supply line around the dam structure.

[0116] The features, structures, effects, etc. described in the examples of the present application are included in at least one example and are not necessarily limited to one example. In addition, those skilled in the art to which the present application pertains can combine or modify the features, structures, effects, etc. illustrated in at least one example of the present application into other examples. Therefore, the content related to such combinations and modifications should be understood to be included within the scope of the present application.

[0117] This application is not limited to the above-described embodiments and drawings, and it will be apparent to those skilled in the art to which this application pertains that various substitutions, modifications, and changes can be made without departing from the technical spirit or scope of this application. Therefore, the scope of this application is indicated by the claims to be described later, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included within the scope of this application.

[0118] In addition, the embodiments of the present invention further include:

[0119] (1). A display device, comprising:

[0120] A display panel, which includes an active region, a passive region disposed around the active region, and a connection region disposed in the passive region,

[0121] wherein the active region includes an anode electrode, a light-emitting layer, and a cathode electrode,

[0122] wherein the passive region includes a gate driving portion and a crack prevention pattern, and

[0123] wherein the connection region is disposed adjacent to the gate driving portion, and the cathode electrode and a connection electrode disposed above the gate driving portion are in contact with each other in the connection region.

[0124] (2). The display device according to (1), wherein the anode electrode and the connection electrode are formed of the same material.

[0125] (3). The display device according to (1), wherein the gate driving portion includes a transmission signal driving unit, a scanning signal driving unit, and a linking unit.

[0126] (4). The display device according to (3), wherein the connection region is disposed between the transmission signal driving unit and the scanning signal driving unit.

[0127] (5). The display device according to (1), wherein the connection region includes a contact hole and a connection assisting region.

[0128] (6). The display device according to (5), wherein the connection assisting region is disposed between the contact hole and the active region.

[0129] (7). The display device according to (3), wherein the connection region is disposed between the scanning signal driving unit and the linking unit.

[0130] (8). The display device according to (3), wherein the connection area is disposed between the link unit and the active area.

[0131] (9). The display device according to (1), wherein the passive area further includes a low-voltage supply line and a dam structure, and

[0132] wherein the connection electrode is connected to the low-voltage supply line in a region adjacent to the dam structure.

[0133] (10). The display device according to (1), wherein the passive area includes a bank layer and a planarization layer extending from the active area, and

[0134] wherein the connection area includes a first part that removes the planarization layer and a second part that removes the bank layer of the passive area.

[0135] (11). The display device according to (10), wherein the first part and the second part have different widths.

[0136] (12). A display device, comprising:

[0137] A display panel including an active area and a passive area;

[0138] Thin film transistors in the active area;

[0139] A planarization layer, a first electrode, a bank layer, a light-emitting layer, and a second electrode disposed on the thin film transistors;

[0140] A gate driving part, a dam structure, and a crack prevention structure in the passive area; and

[0141] A connection area, in which a connection electrode disposed above the gate driving part is connected to an extension of the second electrode.

[0142] (13). The display device according to (12), wherein the gate driving part includes a transmission signal driving unit, a scanning signal driving unit, and a link unit, and

[0143] wherein the connection area is disposed between the transmission signal driving unit and the scanning signal driving unit.

[0144] (14). The display device according to (12), wherein the gate driving part includes a transmission signal driving unit, a scanning signal driving unit, and a link unit, and

[0145] wherein the connection area is disposed between the scanning signal driving unit and the link unit.

[0146] (15). The display device according to (13), wherein the connection region includes a first part and a second part,

[0147] wherein the first part has a first width and the second part has a second width, and

[0148] wherein the first width and the second width are different from each other, and due to the difference between the first width and the second width, the connection region further includes a connection auxiliary region, and the connection auxiliary region is disposed on the planarization layer exposed in the region where the bank layer is removed.

[0149] (16). The display device according to (15), wherein the connection auxiliary region is disposed closer to the active region than the center of the connection region.

[0150] (17). The display device according to (12), wherein the first electrode and the connection electrode are formed of the same material.

[0151] (18). The display device according to (12), wherein the passive region further includes a low-voltage supply line,

[0152] wherein at least a part of the low-voltage supply line is disposed below the dam structure, and

[0153] wherein the connection electrode is connected to the low-voltage supply line around the dam structure.

Claims

1. A display device, comprising: a flexible substrate including an active region, a passive region disposed around the active region, and a connection region disposed in the passive region, the active region including an anode electrode, a light-emitting layer, and a cathode electrode, and the passive region including a gate driving portion, a thin-film transistor disposed in the active region and including a semiconductor layer, a gate electrode, and a source electrode and a drain electrode; a planarization layer disposed on the thin-film transistor, and wherein the anode electrode is disposed above the planarization layer; a bank layer disposed on the anode electrode; a connection electrode located at the passive region, disposed on the planarization layer and provided with at least one degassing pattern, wherein the cathode electrode extends to the passive region and contacts the connection electrode in the connection region; at least one dam structure disposed around the active region; and a low-voltage supply line that contacts the connection electrode in the passive region.

2. The display device according to claim 1, wherein the connection electrode and the anode electrode are formed at the same layer.

3. The display device according to claim 1, wherein the low-voltage supply line is formed at the same layer as the source electrode and the drain electrode.

4. The display device according to claim 1, wherein the at least one degassing pattern includes a plurality of degassing patterns spaced apart from each other.

5. The display device according to claim 1, wherein the at least one dam structure is formed by the planarization layer and the bank layer.

6. The display device according to claim 5, wherein at least a part or portion of the connection electrode is disposed between the planarization layer and the bank layer in the at least one dam structure.

7. The display device according to claim 3, wherein the low-voltage supply line is disposed between the flexible substrate and the at least one dam structure.

8. The display device according to claim 1, wherein the connection electrode and the cathode electrode are in contact with each other in a contact hole passing through the planarization layer and the bank layer in the connection region.

9. The display device according to claim 6, wherein the connection electrode contacts the top surface and the side surface of the planarization layer in the at least one dam structure.

10. The display device according to claim 1, wherein the connection electrode is positioned closer to the periphery of the flexible substrate than the cathode electrode.

11. The display device according to claim 1, further comprising a crack prevention pattern, and the at least one dam structure is disposed between the crack prevention pattern and the gate driving portion.

12. The display device according to claim 11, wherein the connection region is disposed between the crack prevention pattern and the active region.

13. The display device according to claim 12, wherein the distance between the connection region and the crack prevention pattern is different from the distance between the connection region and the active region.

14. The display device according to claim 12, wherein The crack-blocking pattern is spaced apart from the connection electrode and the cathode electrode.

15. The display device according to claim 1, wherein, the passive region further includes a high-voltage supply line.

16. The display device according to claim 15, wherein, the passive region further includes a driving part that supplies a signal to the active region, and the driving part is disposed on one side of the active region.

17. The display device according to claim 16, wherein, the low-voltage supply line and the high-voltage supply line extend along the boundary of the active region and are disposed on both sides of the driving part.

18. The display device according to claim 15, wherein, the at least one dam structure includes a plurality of dam structures having different heights.

19. The display device according to claim 18, wherein, the plurality of dam structures are formed by the planarization layer and the bank layer.

20. The display device according to claim 19, wherein, in at least one of the plurality of dam structures, the bank layer contacts the top surface and the side surface of the planarization layer.

21. The display device according to claim 19, wherein, in at least one of the plurality of dam structures, the connection electrode contacts the top surface and the side surface of the planarization layer.

22. The display device according to claim 21, wherein, in at least one of the plurality of dam structures, the bank layer contacts the top surface and the side surface of the connection electrode.

23. The display device according to claim 19, wherein, in at least one of the plurality of dam structures, the low-voltage supply line is disposed below the planarization layer.

24. The display device according to claim 1, wherein, the gate driving part includes a transmission signal driving unit, a scan signal driving unit, and a linking unit.

25. The display device according to claim 24, wherein, the connection region is disposed between the transmission signal driving unit and the scan signal driving unit.

26. The display device according to claim 24, wherein, the connection region is disposed between the scan signal driving unit and the linking unit.

27. The display device according to claim 24, wherein, the connection region is disposed between the linking unit and the active region.

28. The display device according to claim 1, wherein, the connection region includes a contact hole and a connection assisting region.

29. The display device according to claim 28, wherein, the connection assisting region is disposed between the contact hole and the active region.

30. The display device according to claim 1, wherein, the connection electrode is connected to the low-voltage supply line in a region adjacent to the at least one dam structure.

31. The display device according to claim 1, wherein, the planarization layer and the bank layer extend from the active region to the passive region, and wherein the connection region where the cathode electrode and the connection electrode contact each other includes a first part where the planarization layer is removed and a second part where the bank layer is removed in the passive region.

32. The display device according to claim 31, wherein, the first part and the second part have different widths.

33. The display device according to claim 31, wherein, the connection area further includes a part that removes the inorganic insulating layer under the planarization layer corresponding to the first part.

34. The display device according to claim 11, wherein, the low-voltage supply line is disposed between the crack prevention pattern and the connection area.

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