Co-doped Fe3GeTe2 topological Hall effect material for spintronic device as well as preparation and application of Co-doped Fe3GeTe2 topological Hall effect material

Abstract

The invention relates to a Co-doped Fe3GeTe2 topological Hall effect material for a spin electronic device and preparation and application thereof, a Co-doped Fe3GeTe2 sample is grown by regulating and controlling the feeding proportion of metal powder by utilizing a chemical vapor transport method, the controllability in the preparation process is relatively high, a two-dimensional ferromagnetic single crystal material can be directly obtained, secondary treatment is not needed, and the preparation process is simple and convenient. The obtained single crystal sample is good in crystallinity, the finally obtained two-dimensional material is high in quality, the topological Hall effect is observed in the cail for the first time, and it is indicated that the two-dimensional material has a non-collinear spin structure (Skyrmions). According to the preparation method, the diversified Fe-based single crystal two-dimensional material which is large in size, high in quality, easy to peel and transfer and convenient to integrate and manufacture can be directly obtained by controlling the proper growth temperature and regulating the proper feed ratio, and the preparation method has a wide application prospect in the field of spinning electronic devices and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of spin electronic devices and relates to a Co-doped Fe 3 Get 2 Topological Hall effect materials and their preparation and applications. Background Art

[0002] At present, two-dimensional materials are a hot topic in the international materials research community. Especially since the advent of graphene and later layered transition metal dichalcogenides (TMDs), researchers have discovered two-dimensional materials with a variety of properties, such as semiconductors, metals, superconductors, and two-dimensional materials with topological properties and magnetic ground states. At the same time, with the rapid development of information technology, traditional silicon-based electronic devices are gradually facing physical limits and power consumption bottlenecks. Spintronic devices use the spin freedom of electrons to store and process information, and have the advantages of high speed, low power consumption, and non-volatility. They are considered to be a breakthrough in the next generation of information technology. Finding a ferromagnetic two-dimensional material system with high spin polarization and topological properties is the key to realizing high-performance spintronic devices.

[0003] Among them, two-dimensional ferromagnetic semiconductors provide new degrees of freedom in the design and regulation of magnetism due to their unique layered structure. In particular, in 2017, the bilayer Ce 2 Ge 2 Te 6 (30K) and single-layer CrI 3 (45K) have proved the existence of intrinsic ferromagnetism. 3 Get 2 However, the instability, complex phase states, and complicated reaction processes of these two-dimensional ferromagnetic semiconductors, as well as the lack of topological properties that are crucial for spintronic devices, limit their practical applications.

[0004] The topological Hall effect (THE) is a transport phenomenon in magnetic materials caused by non-contributing spin structures (such as Skyrmions), which can be used as an effective means to detect and manipulate Skyrmions. Skyrmions have the advantages of small size, high stability, and easy manipulation, making them ideal information carriers for future high-density, low-power spintronic devices.

[0005] Among the existing magnetic materials, materials with topological Hall effect mainly include the following categories: MnSi, Fe 5 Get 2 , Fe 3 Sn 2 , GdCoC 2These materials show different topological Hall resistivities at low temperatures, and the types of skyrmions are different. For example, MnSi is the material in which skyrmions were first discovered, and its topological Hall resistivity at low temperatures is about 10 -9 Ω·cm, the low topological Hall resistivity will limit its signal strength in spin electronics applications. Secondly, most existing materials are based on Bloch-type skyrmions, while Néel-type skyrmions are more stable in low-dimensional materials and have higher topological Hall resistivity. 3 GaTe 2 Although they are both two-dimensional materials, the resistivity reported so far is still relatively low, indicating that the existing system is insufficient in the coordinated optimization of low-dimensional magnetism and topological Hall effect. Therefore, the existing materials have obvious defects in resistivity intensity, skyrmion type, temperature adaptability, and utilization of low-dimensional characteristics.

[0006] Chinese patent application CN202010640949.3 provides a two-dimensional ferromagnetic material Fe 3 Get 2 and Co-doped Fe 3- x Co x Get 2 The single crystal growth method is to melt Fe blocks, Co blocks, Ge blocks and Te blocks at high temperature, cool and crystallize to form polycrystalline blocks, and then fully grind to form polycrystalline powders, and then repeatedly mix the powders and heat them to grow large single crystals. However, the applicant has conducted research and analysis and found that the Co-doped Fe 3-x Co x Get 2 It has lost its original hard magnetic phase and transformed into a soft magnetic phase, and its saturation magnetization intensity is extremely low. It does not have a topological Hall effect. The high-temperature melting step used in the preparation process may lead to lattice defects, resulting in uneven Co doping and affecting material quality. Summary of the invention

[0007] The purpose of the present invention is to provide a Co-doped Fe 3 Get 2 Topological Hall effect materials and their preparation and application to solve the Fe 3 Get 2 The lack of topological properties in materials provides a new material platform for the development of high-performance spintronic devices.

[0008] In the present invention, Co-doped Fe 3 Get 2The topological Hall resistivity is significantly improved by Co doping, and the Néel-type skyrmions are more stable in low-dimensional materials and have higher topological Hall resistivity. With its high resistivity, Néel-type skyrmions and two-dimensional characteristics, it provides a new direction for performance breakthroughs in topological Hall effect materials. Future research can focus on developing more Néel-type skyrmion materials, optimizing doping strategies to improve high-temperature stability, and exploring the enhancement mechanism of the topological Hall effect in low-dimensional materials.

[0009] The purpose of the present invention can be achieved by the following technical solutions:

[0010] In a first aspect, the present invention provides a Co-doped Fe 3 Get 2 Topological Hall effect material, whose chemical formula is Fe 3-x Co x Get 2 , where 0<x≤1.5, with Néel-type Skyrmions, saturation magnetization of 20-40emu / g, presenting a hard magnetic phase.

[0011] Furthermore, the value range of x is 0.2 to 0.4.

[0012] In a second aspect, the present invention provides a Co-doped Fe 3 Get 2 A method for preparing a topological Hall effect material comprises the following steps:

[0013] S1. Weigh Fe, Co, Ge, and Te metal powders, mix them evenly, and add iodine to obtain a mixed powder;

[0014] S2, placing the mixed powder in a vacuum sealed environment, heating and sintering to obtain flaky crystals, namely Co-doped Fe 3 Get 2 Topological Hall effect materials.

[0015] Furthermore, in S1, the mass proportion of iodine as a transport agent in the mixed powder is about 8-12 wt%, preferably about 10 wt%.

[0016] Furthermore, in S1, high purity (≥99.99%) metal powder is used, and the size is about 1-10 microns.

[0017] Furthermore, in S2, the process conditions for the temperature-raising sintering are: 780°C in the high temperature zone and 700°C in the low temperature zone, and the temperature is kept at 6 to 8 days.

[0018] Furthermore, in S2, the heating rate is from room temperature to sintering temperature within 8 hours.

[0019] Furthermore, in S2, the plane size of the plate-like crystal is 2 to 3 mm.

[0020] In a third aspect, the present invention provides a Co-doped Fe 3 Get 2 Application of topological Hall effect materials in spintronic devices based on vdW ferromagnetism.

[0021] Compared with the prior art, the present invention has the following advantages:

[0022] (1) High-quality, large-size single crystal materials are obtained through simple equipment and temperature control. The sintered products can be separated by mechanical stripping, which is simple to operate and highly safe.

[0023] (2) For the first time, Co doped Fe 3 Get 2 The topological Hall effect was observed in the material, indicating that the material has a non-collinear spin structure (Skyrmions), which provides a promising route for the development of spintronic devices based on vdW ferromagnetism. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The Fe 2.8 Co 0.2 Get 2 EDS mapping results; a, b, c are the element distribution maps of Fe, Co, Ge, and Te respectively;

[0025] Figure 2 This is a photo of the sintered product of the present invention at room temperature, wherein a is placed in a quartz tube, and b is a plate-like crystal screened out in a;

[0026] Figure 3 Physical photos, SEM scanning electron microscope pictures and optical microscope pictures of two-dimensional ferromagnetic materials are obtained for the embodiments of the present invention, wherein a, d, g correspond to the two-dimensional ferromagnetic materials of Example 1, b, e, h correspond to Example 1, and c, f, i correspond to Example 2;

[0027] Figure 4 XRD patterns of two-dimensional ferromagnetic materials obtained for comparative examples and embodiments of the present invention;

[0028] Figure 5 Ramam curves of two-dimensional ferromagnetic materials are obtained for comparative examples and embodiments of the present invention;

[0029] Figure 6The magnetization intensity-temperature (MT) curve of the two-dimensional ferromagnetic material obtained by the present invention, wherein ac is Comparative Example 1, Example 1, and Example 2, respectively, and df is Comparative Example 1, Example 1, and Example 2, respectively. The applied magnetic field of the two-dimensional ferromagnetic material is Fe parallel to the c-axis. 3-x Co x Get 2 MH curve;

[0030] Figure 7 The Lorentz scanning electron microscope LTEM images of the two-dimensional ferromagnetic material obtained by the present invention, wherein ac corresponds to Example 1, Example 1, and Example 2 respectively;

[0031] Figure 8 is the magnetic transport curve of the two-dimensional ferromagnetic material obtained in the present invention, wherein ac corresponds to Example 1, Example 1, and Example 2 respectively;

[0032] Fig. 9 A topological Hall effect curve obtained by processing the magnetic transport curve of a two-dimensional ferromagnetic material obtained by the present invention;

[0033] Fig.10 For existing materials (i.e., Co-doped Fe 3-x Co x Get 2 ) EDS mapping results, a, b, c are the element distribution maps of Fe, Co, Ge, and Te respectively;

[0034] Fig.11 For existing materials (i.e., Co-doped Fe 3-x Co x Get 2 )'s magnetization intensity-temperature (MT) curve and the MH curve of the external magnetic field along the c-axis parallel to the c-axis. DETAILED DESCRIPTION

[0035] The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented based on the technical solution of the present invention, and provides a detailed implementation method and specific operation process, but the protection scope of the present invention is not limited to the following embodiments.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] The terms "and / or", "or / and", and "and / or" used herein include any one of two or more related listed items, and also include any and all combinations of the related listed items, wherein the any and all combinations include any combination of two related listed items, any more related listed items, or all related listed items. It should be noted that when at least three items are connected by at least two conjunctions selected from "and / or", "or / and", and "and / or", it should be understood that in the present application, the technical solution undoubtedly includes technical solutions connected by "logical and", and also undoubtedly includes technical solutions connected by "logical or".

[0038] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0039] In this application, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are deemed to be continuous and include the minimum and maximum values ​​of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0040] Only some numerical ranges are specifically disclosed herein. However, any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, and likewise any upper limit can be combined with any other upper limit to form an unspecified range. In addition, each separately disclosed point or single value can itself be combined as a lower limit or upper limit with any other point or single value or with other lower limits or upper limits to form an unspecified range.

[0041] The temperature parameters in this application, unless otherwise specified, allow both constant temperature treatment and treatment within a certain temperature range. The constant temperature treatment allows the temperature to fluctuate within the accuracy range controlled by the instrument. Fluctuations within the range of ±5°C, ±4°C, ±3°C, ±2°C, and ±1°C are allowed.

[0042] Herein, the “suitable” mentioned in “suitable combination”, “suitable method”, “any suitable method”, etc., shall be based on the ability to implement the technical solution of this application, solve the technical problems of this application, and achieve the expected technical effects of this application.

[0043] In the present application, "further", "further", "particularly" and the like are used for descriptive purposes to indicate differences in content, but should not be construed as limiting the scope of protection of the present application.

[0044] In this application, "optionally", "optional", and "optional" mean optional or dispensable, that is, any one of the two parallel schemes of "yes" or "no". If multiple "options" appear in a technical solution, unless otherwise specified and there is no contradiction or mutual restriction, each "optional" is independent.

[0045] In the description of the application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0046] Unless otherwise specified, all formulations and tests herein took place at 25°C.

[0047] As used herein, "includes," "comprising," "containing," "having," or other variations thereof are intended to encompass non-closed inclusions, and no distinction is made between these terms. The term "comprising" means that other steps and ingredients that do not affect the end result may be added. The compositions and methods / processes of the present invention comprise, consist of, and consist essentially of the essential elements and limitations described herein, as well as any additional or optional ingredients, components, steps, or limitations described herein. As used herein, no distinction is made between the terms "efficacy," "performance," "effect," and "efficacy."

[0048] If there is no special description, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution. If there is no special description, all technical features and optional technical features of the present application can be combined with each other to form a new technical solution.

[0049] If there is no special explanation, all the steps of the present application can be performed sequentially or randomly, preferably sequentially.

[0050] Embodiment 1:

[0051] (1) High-purity (≥99.99%) Fe, Co, Ge, and Te metal powders with a particle size of about 1-10 μm are mixed uniformly and fully ground, and then 100 mg of iodine is added to obtain a mixed powder with a total mass of about 1 g; wherein the molar ratio of Fe, Co, Ge, and Te is 3-x:x:1:2 (0<x≤1.5), x=0.2;

[0052] (2) Place the mixed powder into a quartz tube and evacuate the tube to a vacuum of 3×10 -3 Pa rear seal;

[0053] (3) Place the sealed quartz tube in a tube furnace, set the temperature of the dual-temperature zone tube furnace to 780°C in the high temperature zone and 700°C in the low temperature zone, and heat it from room temperature to the set temperature at a heating rate of 2°C / min, and finally cool it naturally at this temperature. A slow and uniform heating rate can ensure uniform nucleation of the sample.

[0054] (4) Take out the sintered product in the quartz tube and screen out the flake crystals to directly obtain the Co-doped two-dimensional ferromagnetic single crystal material Fe 2.8 Co 0.2 Get 2 .

[0055] Embodiment 2:

[0056] (1) High-purity (≥99.99%) Fe, Co, Ge, and Te metal powders with a particle size of about 1-10 μm are mixed uniformly and fully ground, and then 100 mg of iodine is added to obtain a mixed powder with a total mass of about 1 g; wherein the molar ratio of Fe, Co, Ge, and Te is 3-x:x:1:2 (0<x≤1.5), x=0.4;

[0057] (2) Place the mixed powder into a quartz tube and evacuate the tube to a vacuum of 3×10 -3 Pa rear seal;

[0058] (3) Place the sealed quartz tube in a tube furnace, set the temperature of the dual-temperature zone tube furnace to 780°C in the high temperature zone and 700°C in the low temperature zone, and heat it from room temperature to the set temperature at a heating rate of 2°C / min, and keep it at this temperature for 7 days, and finally cool it naturally. A slow and uniform heating rate can ensure uniform nucleation of the sample.

[0059] (4) Take out the sintered product in the quartz tube and screen out the flake crystals to directly obtain the Co-doped two-dimensional ferromagnetic single crystal material Fe 2.6 Co 0.4 Get 2 .

[0060] Comparative Example 1:

[0061] (1) The metal powders of Fe, Ge and Te were mixed uniformly and ground thoroughly, and then 80 mg of iodine was added to obtain a mixed powder with a total mass of about 1 g; wherein the molar ratio of Fe, Ge and Te was 3:1:2;

[0062] (2) Place the mixed powder into a quartz tube and evacuate the tube to a vacuum of 3×10 -3 Pa rear seal;

[0063] (3) Place the sealed quartz tube in a tube furnace, set the temperature of the dual-temperature zone tube furnace to 780°C in the high temperature zone and 700°C in the low temperature zone, raise the temperature from room temperature to the set temperature within 8 hours, keep it at this temperature for 7 days, and finally cool it naturally.

[0064] (4) Take out the sintered product in the quartz tube and screen out the flake crystals to directly obtain the two-dimensional ferromagnetic single crystal material Fe 3 Get 2 .

[0065] Comparative Example 2:

[0066] (1) mixing metal powders of Fe, Ge and Te uniformly and grinding them thoroughly, wherein the molar ratio of Fe, Co, Ge and Te is 3-x:x:1:2 (0<x≤1.5), x=0.4;

[0067] (2) melting the mixed powder at high temperature to obtain a polycrystalline block, and fully grinding it into a polycrystalline powder;

[0068] (3) Place the ground polycrystalline powder into a quartz tube, add 100 mg of iodine, and evacuate the quartz tube to 3×10 -3 Pa rear seal;

[0069] (4) Place the sealed quartz tube in a tube furnace, set the temperature of the dual-temperature zone tube furnace to 780°C in the high temperature zone and 700°C in the low temperature zone, raise the temperature from room temperature to the set temperature within 24 hours, keep it at this temperature for 7 days, and finally lower it to room temperature within 24 hours;

[0070] (5) Take out the sintered product in the quartz tube and screen out the flake crystals to directly obtain the Co-doped two-dimensional ferromagnetic single crystal material Fe 2.6 Co 0.4 Get 2 .

[0071] See also Figure 1 , Figure 1 Fe 2.8 Co 0.2 Get 2 EDS mapping results; ad are the element distributions of Fe, Co, Ge, and Te, respectively. It can be seen that the distribution of various elements is relatively uniform, especially the Co element is uniformly distributed in the entire material area. In addition, the following Table 1 shows the distribution of Fe 3-x Co x Get 2 The EDS atomic ratio of x in Table 1 from left to right is 0, 0.2, and 0.4, which also confirms that the single crystal growth quality and element ratio are in line with experimental expectations.

[0072] Table 1

[0073]

[0074] See also Figure 2-3 ,from Figure 2 It can be seen that the number of plate-like crystals prepared is considerable and has obvious single crystal characteristics. Figure 3 It can be seen that the plane size of the crystal obtained in Example 2 can reach 2mm*2.5mm. Figure 3 The scanning electron microscope image in df clearly shows that the surface of the sample is smooth and flat, with a uniform and dense layered structure. Figure 3 The gi in this figure shows that the crystals can be mechanically exfoliated into nanosheets and transferred to silicon wafers.

[0075] Please continue reading Figure 4 , which shows the Fe doped with different Co concentrations 3-x Co x Get 2 The XRD patterns of the samples show that the peak positions shift to different degrees after the incorporation of different Co concentrations.

[0076] Please continue reading Figure 5 , where ac is Fe 3-x Co x Get 2 Ramam curve, x is 0, 0.2, 0.4; and at 122 and 141 cm -1 The representative Raman characteristic peaks observed at indicate the presence of Te-Te bonds in this compound.

[0077] Please continue reading Figure 6 , ac is Fe 3-x Co x Get 2 The magnetization intensity-temperature (MT) curve x is 0, 0.2, and 0.4 respectively; df is the external magnetic field along the Fe parallel to the c axis 3-x Co x Get 2 The MH curve x is 0, 0.2, and 0.4 respectively. The Curie temperatures TC are determined to be 210K, 150K, and 145K respectively, and the Curie temperatures gradually decrease with the increase of Co content. And through the obvious hysteresis loop of the MH curve, it can be determined that it has ferromagnetism and still maintains the hard magnetic phase.

[0078] Please continue reading Figure 7 , ac is the two-dimensional ferromagnetic material Fe 3-x Co x Get 2 The images of the Lorentz electron microscope LTEM, x is 0, 0.2, 0.4, respectively. It can be determined that in Fe 3Get 2 Skyrmions were not observed in Fe 3-x Co x Get 2 The denser and more stable Néel-type Skyrmions were observed.

[0079] Please continue reading Figure 8 , ac is the two-dimensional ferromagnetic material Fe 3-x Co x Get 2 The magnetic transport curves, x is 0, 0.2, 0.4, from which we can see that in Fe 3 Get 2 It meets the characteristics of ferromagnetic materials, while in Fe 3-x Co x Get 2 The hump is observed in all the samples, which is the signal of the topological Hall effect. Fig. 9 Taking the topological Hall effect processed in as an example, its value is relatively large.

[0080] Please continue reading Fig.10 , Fig.10 The present invention reproduces the existing material (i.e., Co-doped Fe 3-x Co x Get 2 )’s EDS mapping results; ad are the element distributions of Fe, Co, Ge, and Te, respectively. It can be seen that the distribution of various elements is obviously uneven. From the EDS atomic ratio of the material shown in Table 2 below, it can also be seen that the obtained element ratio is not as expected by the experimental design.

[0081] Table 2

[0082] element Atomic content% Fe 35.39 Co 11.90 Ge 16.68 Te 36.03

[0083] Please continue reading Fig.11 , Fig.11 The existing material reproduced by the present invention (i.e., the Co-doped Fe 3-x Co x Get 2 )'s magnetization intensity-temperature (MT) curve ( Fig.11 a), is the MH curve of the external magnetic field parallel to the c-axis ( Fig.11 b). Reproduced the existing material (i.e., Co-doped Fe 3-x Co x Get 2) is a property of the soft magnetic phase, and adds that its Curie temperature Tc is about 50K.

[0084] The present invention reproduces the existing material (i.e., Co-doped Fe 3-x Co x Get 2 ) and tested its related properties, and supplemented relevant data, such as mapping images and specific values ​​of element distribution, as well as evidence of its low Curie temperature. The MH curve also proved its report of soft magnetic phase, which is basically consistent with the results presented in the patent. Since the characteristics of its soft magnetic phase have been confirmed, it can be determined that the material cannot carry non-collinear spin structures (Skyrmions) and it is impossible to have a topological Hall effect.

[0085] The above results confirm that the technology of existing materials is not sufficient to prepare single crystals with high quality and uniform element distribution, especially the non-uniformity of Co doping greatly affects its magnetic properties. The sufficient experimental data provided by the experimental examples taken in the present invention prove that the present invention can prepare two-dimensional ferromagnetic materials with high single crystal quality, uniform element distribution, high Curie temperature, easy peeling, still maintaining hard magnetic phase and topological Hall effect. The above description of the embodiments is to facilitate ordinary technicians in this technical field to understand and use the invention. Those familiar with the technology in this field can obviously easily make various modifications to these embodiments and apply the general principles described here to other embodiments without creative labor. Therefore, the present invention is not limited to the above embodiments, and improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the present invention should be within the scope of protection of the present invention.

Claims

1. A Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices, characterized in that: Its chemical formula is Fe 3-x Co x GeTe2, where 0<x≤1.5, has Néel-type Skyrmions with a saturation magnetization of 20 to 40emu / g, presenting a hard magnetic phase.

2. The Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 1, characterized in that: The value range of x is 0.2 to 0.

4.

3. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 1 or 2, characterized in that: The following steps are involved: S1. Weigh Fe, Co, Ge, and Te metal powders, mix them evenly, and add iodine to obtain a mixed powder; S2. Place the mixed powder in a vacuum sealed environment, increase the temperature and sinter to obtain a flaky crystal, which is a Co-doped Fe3GeTe2 topological Hall effect material.

4. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 3, characterized in that: In S1, the mass proportion of iodine in the mixed powder is 8-12%.

5. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 3, characterized in that: In S1, the purity of the metal powder used is ≥99.99%, and the particle size is 1-10 μm.

6. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 3, characterized in that: In S2, the process conditions for temperature sintering are: 780°C in the high temperature zone and 700°C in the low temperature zone, and the temperature is kept at 6 to 8 days.

7. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 3, characterized in that: In S2, the temperature is increased from room temperature to the sintering temperature at a heating rate of 2°C / min.

8. The method for preparing Co-doped Fe3GeTe2 topological Hall effect material for spintronic devices according to claim 3, characterized in that: In S2, the plane size of the plate-like crystals is 2 to 3 mm.

9. Use of the Co-doped Fe3GeTe2 topological Hall effect material for spin electronic devices as claimed in claim 1 or 2 in spin electronic devices based on vdW ferromagnetism.

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