Integrated device packaging structure, acoustic devices, and related equipment

Abstract

The present application relates to the field of device packaging technology, and discloses an integrated device packaging structure, acoustic device, and related equipment, wherein the device packaging structure includes: a substrate, including a base body and a connection structure integrally formed with the base body; wherein the connection structure includes a metal ring located on the surface of the base body and a solder pad located within the metal ring, wherein the metal ring and the solder pad are electrically connected within the base body; a chip, connected to the solder pad and arranged on the surface of the substrate; a first plastic film, at least covering the outer surface of the chip and exposing at least part of the surface of the metal ring; a metal film, covering the first plastic film and extending to the edge of the substrate to cover the surface of the metal ring; and a second plastic film, covering the metal film. A three-layer packaging structure is sequentially formed on the surface of the chip, with the outermost second plastic film being convenient for adsorption, and can also increase the thickness of the device, reducing the rolling and offset of the device when moving on the carrier, thereby facilitating the device testing process for the packaged device.

Description

Technical Field

[0001] The present application relates to the field of device packaging technology, for example, to an integrated device packaging structure, acoustic devices, and related equipment. Background Art

[0002] With the rapid development of fields such as RF communications and automotive electronics, the reliability requirements for acoustic components in RF and automotive equipment are becoming increasingly stringent. Especially in harsh environments such as high humidity and high temperature, the airtightness of acoustic components has become a key performance indicator. Airtight packaging of acoustic components can effectively prevent the intrusion of water vapor, improve their durability and stability, and extend their lifespan. After the acoustic components are packaged, they must undergo post-processing such as testing and SMT to ensure they can be used in electronic equipment such as RF and automotive equipment.

[0003] In the related art, a metal film and a single-layer epoxy film are used to encapsulate the device.

[0004] During the implementation of the embodiments of the present disclosure, it was found that at least the following problems exist in the related art:

[0005] The device is packaged using a metal film and a single-layer epoxy film. The outermost metal film is relatively smooth and has a certain curvature, which is not convenient for the subsequent device testing process.

[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to ordinary technicians in this field. Summary of the Invention

[0007] In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. The summary is not an extensive review, nor is it intended to identify key / critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.

[0008] The embodiments of the present disclosure provide an integrated device packaging structure, acoustic device, and related equipment, which can facilitate subsequent device testing processes for packaged devices.

[0009] In some embodiments, an integrated device packaging structure includes: a substrate, including a base and a connection structure integrally formed with the base; wherein the connection structure includes a metal ring located on the surface of the base and a solder pad located inside the metal ring, and the metal ring and the solder pad are conductively connected inside the base; a chip, connected to the solder pad to be arranged on the surface of the substrate; a first plastic film, at least wrapping and covering the outer surface of the chip and exposing at least part of the surface of the metal ring; a metal film, covering the first plastic film and extending to cover the edge of the substrate to cover the surface of the metal ring; and a second plastic film, covering the metal film.

[0010] Optionally, the material of the matrix includes a polymer material, a fiber-reinforced resin composite material or a silicon-based material; and / or the material of the connection structure includes metal.

[0011] Optionally, relative to the surface of the substrate, a height of the metal ring is greater than or equal to a height of the pad.

[0012] Optionally, there is a preset distance between the outer side of the chip and the inner side of the metal ring.

[0013] Optionally, the chip is connected to the pad via a solder ball.

[0014] Optionally, the first plastic film extends to cover a portion of the inner surface of the metal ring.

[0015] Optionally, the first plastic film also covers the substrate surface outside the metal ring; or, the first plastic film also covers the substrate surface outside the metal ring and the outer part of the metal ring surface, and ensures that the metal ring surface has an exposed surface not covered by the first plastic film.

[0016] Optionally, the thickness range of the first plastic film is [20 μm, 80 μm]; and / or the thickness range of the metal film is [20 μm, 80 μm]; and / or the thickness range of the second plastic film is [60 μm, 150 μm].

[0017] Optionally, the device packaging structure has a thickness in a range of [0.5 mm, 0.6 mm].

[0018] In some embodiments, the acoustic device includes the integrated device packaging structure as described above.

[0019] In some embodiments, the radio frequency device includes an acoustic device as described above.

[0020] In some embodiments, the vehicle-mounted device includes an acoustic device as described above, or a radio frequency device as described above.

[0021] The integrated device packaging structure, acoustic device, and related equipment provided by the embodiments of the present disclosure can achieve the following technical effects:

[0022] In the embodiment of the present disclosure, the chip is arranged on the surface of the substrate by connecting to the pad, and the surface of the chip is covered with a first plastic film, a metal film and a second plastic film in sequence. Compared with the metal film, the outermost second plastic film is easier to adsorb, thereby facilitating the device testing process for the packaged device. Moreover, by covering the first plastic film, the metal film and the second plastic film, the thickness of the device can be increased, thereby reducing the rolling and deviation of the device when moving on the carrier, which is convenient for device testing. In addition, the three-layer packaging structure formed by the first plastic film, the metal film and the second plastic film can further improve the packaging airtightness of the device.

[0023] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily described by corresponding drawings. These exemplary descriptions and drawings do not limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation. In addition,

[0025] Figure 1 is a side view of an integrated device packaging structure provided by an embodiment of the present disclosure;

[0026] Figure 2 is a side view of another integrated device packaging structure provided by an embodiment of the present disclosure;

[0027] Figure 3 is a side view of a substrate for device packaging provided by an embodiment of the present disclosure;

[0028] Figure 4 This embodiment of the present disclosure provides a Figure 3 A side view of flip-chip bonding between the chip and the substrate based on the embodiment of FIG.

[0029] Figure 5 This embodiment of the present disclosure provides a Figure 4 Side view after flip-chip bonding between chip and substrate is completed on the basis of

[0030] Figure 6 This embodiment of the present disclosure provides a Figure 5 A side view after the first plastic sealing layer is provided on the basis of the present invention;

[0031] Figure 7 This embodiment of the present disclosure provides a Figure 6 A side view of the metal ring after at least a portion of the first plastic sealing layer is removed from the surface of the metal ring;

[0032] Figure 8 This embodiment of the present disclosure provides a Figure 7 Side view after setting the metal layer on the basis;

[0033] Figure 9 This embodiment of the present disclosure provides a Figure 8 A side view after a second plastic sealing layer is provided on the basis of the present invention;

[0034] Figure 10 This embodiment of the present disclosure provides a Figure 9 Side view of the finished product after cutting based on the .

[0035] Figure numerals: 10, substrate; 11, base; 12, connection structure; 121, metal ring; 122, solder pad; 123, conductive connection part; 124, electrical connection point; 15, solder ball; 20, chip; 30, first plastic film; 40, metal film; 50, second plastic film; 31, first plastic layer. DETAILED DESCRIPTION

[0036] In order to be able to understand the features and technical content of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The accompanying drawings are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the sake of convenience of explanation, a full understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, to simplify the drawings, well-known structures and devices can be simplified for display.

[0037] The terms "first," "second," and the like in the technical solutions described herein are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate to facilitate the description of the embodiments of the present disclosure herein. Furthermore, the terms "including," "having," and any variations thereof are intended to cover non-exclusive inclusions.

[0038] Unless otherwise stated, the term "plurality" means two or more.

[0039] In the embodiment of the present disclosure, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B means: A or B.

[0040] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.

[0041] The term "correspondence" may refer to an association relationship or a binding relationship. The correspondence between A and B means that there is an association relationship or a binding relationship between A and B.

[0042] Combine Figure 1 As shown, an embodiment of the present disclosure provides an integrated device packaging structure, including: a substrate 10 , a chip 20 , a first plastic film 30 , a metal film 40 and a second plastic film 50 .

[0043] The substrate 10 includes a base 11 and a connection structure 12 integrally formed with the base 11. The connection structure 12 includes a metal ring 121 located on the surface of the base 11 and a solder pad 122 located within the metal ring 121. The metal ring 121 and the solder pad 122 are electrically connected within the base 11. The chip 20 is connected to the solder pad 122 and disposed on the surface of the substrate 10. A first plastic film 30 at least wraps around and covers the outer surface of the chip 20, exposing at least a portion of the surface of the metal ring 121. A metal film 40 overlies the first plastic film 30 and extends to the edge of the substrate 10 to cover the surface of the metal ring 121. A second plastic film 50 overlies the metal film 40.

[0044] In the disclosed embodiment, the chip 20 is arranged on the surface of the substrate 10 by connecting to the pad 122. The surface of the chip 20 is sequentially covered with a first plastic film 30, a metal film 40, and a second plastic film 50. Compared with the metal film 40, the outermost second plastic film 50 is easier to adsorb, thereby facilitating the device testing process for the packaged device. Moreover, by covering the first plastic film 30, the metal film 40, and the second plastic film 50, the thickness of the device can be increased, thereby reducing the rolling and offset of the device when moving on the carrier, making it easier to perform device testing. In addition, the three-layer packaging structure formed by the first plastic film 30, the metal film 40, and the second plastic film 50 can further improve the airtightness of the device packaging and effectively prevent external environmental factors such as water vapor and dust from invading the interior of the package. The first plastic film 30, the metal film 40, and the second plastic film 50 can also provide good mechanical protection for the chip 20 and reduce the influence of external mechanical stress. The metal film 40 also has a good electromagnetic shielding effect, which can reduce external electromagnetic interference and improve the electrical performance of the device. The connection between the metal film 40 and the metal ring 121 facilitates heat dissipation, effectively reducing the operating temperature of the chip 20 and improving the reliability and service life of the device. The integrated design of the substrate 10 and metal ring 121 simplifies the packaging process, shortens the production cycle of the device packaging structure, and reduces production costs.

[0045] In the substrate 10 of the embodiment of the present disclosure, the material of the base 11 is not limited and can be determined according to actual needs, such as polymer materials, fiber-reinforced resin composite materials, or silicon-based materials.

[0046] Optionally, the material of the base 11 includes a plate material for a PCB board. In this embodiment, the substrate 10 includes a PCB substrate.

[0047] Optionally, the material of substrate 11 includes a polymer material. In this embodiment, using a polymer material as substrate 11 can make substrate 10 more lightweight and further reduce packaging costs. The excellent insulation properties of polymer materials can effectively isolate electrical signals, reduce signal interference, improve the electrical performance of the device, and prevent electrical faults such as short circuits, thereby improving device reliability.

[0048] Optionally, the polymer material includes: Core Material or Polypropylene Material. The Core Material can consist of copper foil, an insulating layer, and another layer of copper foil. The intermediate insulating layer can be a cured resin and glass cloth. PP Material is a thermoplastic made from propylene through a polyaddition reaction.

[0049] Optionally, the material of the matrix 11 includes a fiber-reinforced resin composite material, for example, a glass fiber-reinforced resin composite material, a carbon fiber-reinforced resin composite material, etc., wherein the resin includes epoxy resin, phenolic resin, polyurethane resin, etc.

[0050] Optionally, the material of the substrate 11 includes a silicon-based material, such as silicon-based lithium tantalate, 4H-silicon carbide, etc.

[0051] In the disclosed embodiment, the material of the connection structure 12 is not limited, as long as it is a conductive metal that can achieve electrical connection, for example, copper, aluminum, tin, or a tin-silver-copper alloy.

[0052] Optionally, the material of the connection structure 12 includes copper. In this embodiment, according to the pre-designed structure, the connection structure 12 adopts copper, and the base 11 material (for example, a polymer material) is pressed with copper to obtain a PCB substrate 10 for device packaging. The PCB substrate 10 can provide functions such as mechanical support, electrical interconnection and sealing connection. Among them, the metal ring 121 surrounds the pad 122, and can form a closed sealing structure when the device is packaged, effectively preventing external environmental factors such as water vapor and dust from invading the interior of the package. The pad 122 is located in the metal ring 121, providing a stable electrical connection point to ensure the reliability of the electrical connection. The pad 122 and the metal ring 121 are integrally formed, which can also reduce the connection problems between the pad 122 and the metal ring 121 in the package and improve the stability of the electrical connection.

[0053] Optionally, relative to the surface of the substrate 11 , the height of the metal ring 121 is greater than or equal to the height of the pad 122 .

[0054] In this embodiment, the height of metal ring 121 is greater than or equal to the height of pad 122. This allows it to better surround pad 122, forming a more effective seal and preventing external environmental factors such as moisture and dust from invading the package interior. The taller metal ring 121 provides better mechanical protection for pad 122, reducing the impact of external mechanical stresses (such as vibration and shock) on pad 122. The taller metal ring 121 also increases the heat dissipation area, aiding heat dissipation and improving the device's thermal management performance.

[0055] In the device packaging structure of the embodiment of the present disclosure, the chip 20 is connected to the pad 122, and the metal ring 121 is located outside the pad 122. The relative positions of the chip 20 and the metal ring 121 are not limited and can be set according to actual conditions.

[0056] Optionally, the outer side of the chip 20 may contact the inner side of the metal ring 121 ; or, the outer edge of the chip 20 may be placed on a portion of the upper surface of the metal ring 121 .

[0057] Optionally, a preset distance L is provided between the outer side of chip 20 and the inner side of metal ring 121. In this embodiment, the presence of the preset distance ensures that metal ring 121 can effectively surround chip 20, forming a tighter seal and preventing external environmental factors such as moisture and dust from invading the interior of the package. This preset distance provides sufficient buffer space for chip 20, reducing the impact of external mechanical stress (such as vibration and shock) on chip 20. It also better isolates chip 20 from metal ring 121, reduces electrical signal interference, and improves the electrical performance of the device. Furthermore, it prevents extrusion damage to chip 20 caused by contact with metal ring 121.

[0058] Optionally, the preset distance L is in the range of (0 μm, 100 μm] to ensure the formation of a tight sealing structure while taking into account the size of the device packaging structure. For example, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or any value in the range of (0 μm, 100 μm].

[0059] Optionally, the preset distance L is in a range of [10 μm, 100 μm]. Optionally, the preset distance L is in a range of [30 μm, 100 μm]. Optionally, the preset distance L is in a range of [50 μm, 100 μm].

[0060] Optionally, chip 20 is connected to pad 122 via solder balls 15. In this embodiment, solder balls 15 provide a stable electrical connection, ensuring reliable signal transmission between chip 20 and substrate 10. They also provide a certain degree of mechanical connection strength, enhancing the bonding between chip 20 and substrate 10. The material of solder balls 15 can be determined according to actual needs. For example, solder balls 15 include gold balls, tin balls, and copper balls.

[0061] Optionally, the solder balls 15 include gold balls. In this embodiment, the gold balls are formed by hot pressing and ultrasonically applying gold wires, providing electrical connections between the chip 20 and the substrate 10. Gold balls have extremely high electrical conductivity and can provide low-resistance electrical connections, reducing signal transmission losses and improving the electrical performance of the device. Gold balls also have excellent oxidation resistance and corrosion resistance, maintaining stable performance in harsh environments and improving device reliability. Furthermore, the gold ball connection technology is compatible with conventional flip-chip 20 soldering processes, offering a high degree of process reuse and suitability for large-scale production.

[0062] Optionally, combined Figure 1 As shown, the first plastic film 30 extends to cover a portion of the inner surface of the metal ring 121 .

[0063] In this embodiment, the first plastic film 30 extends over a portion of the surface of the metal ring 121, creating a tighter seal that prevents moisture, dust, and other environmental factors from intruding into the package. It also provides better mechanical protection for the metal ring 121 and chip 20, reducing the effects of external mechanical stresses (such as vibration and shock) on the package structure. This design also simplifies the packaging process, reduces production steps, shortens the production cycle of the device package structure, and improves production efficiency.

[0064] Optionally, the first plastic film 30 also covers the surface of the substrate 10 outside the metal ring 121 .

[0065] Optionally, combined Figure 1 As shown, the first plastic film 30 also covers the surface of the substrate 10 outside the metal ring 121 and the outer surface of the metal ring 121, and ensures that the surface of the metal ring 121 has an exposed surface not covered by the first plastic film 30.

[0066] In this embodiment, the first plastic film 30 also covers the surface of the substrate 10 outside the metal ring 121. This design allows only the first plastic film 31 on the surface of the metal ring 121 to be removed during the packaging process of the device packaging structure, further simplifying the packaging process.

[0067] Optionally, combined Figure 2 As shown, the first plastic film 30 may not cover the surface of the substrate 10 outside the metal ring 121 , or the outer surface of the metal ring 121 .

[0068] Optionally, the chip 20 is configured to implement electro-acoustic-acoustic-electrical signal conversion and filtering; the main materials are Al electrodes and LT / LN substrates.

[0069] Optionally, the first plastic film 30 includes an epoxy thermosetting adhesive film. The epoxy thermosetting adhesive film is an adhesive film material based on epoxy resin, which is cross-linked and cured by heating or adding a curing agent. In this embodiment, the application environment of the acoustic device ranges from -40 degrees Celsius to 105 degrees Celsius. In a high-temperature environment, the first plastic film 30 will experience a certain degree of thermal expansion due to the influence of temperature. Specifically, the thermal expansion effect in the thickness direction will push open the metal film 40. Therefore, considering the mechanical protection effect and the influence of thermal expansion, the thickness of the first plastic film 30 has a suitable range. Preferably, the thickness h1 of the first plastic film 30 is in the range of [20 μm, 80 μm]. For example, the thickness h1 of the first plastic film 30 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within this range.

[0070] In the device packaging structure of the embodiment of the present disclosure, the material of the metal film 40 is not limited as long as it can perform electromagnetic shielding.

[0071] Optionally, the metal film 40 includes a copper film.

[0072] Optionally, the thickness h2 of the metal film 40 is in the range of [20 μm, 80 μm]. For example, the thickness h2 of the metal film 40 can be 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or any value within the range.

[0073] Optionally, the thickness h3 of the second plastic film 50 is in the range of [60 μm, 150 μm]. For example, the thickness h3 of the second plastic film 50 can be 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, or any value within this range. The thickness of the second plastic film 50 can be further increased depending on different actual conditions.

[0074] In this embodiment, the second plastic film 50 protects the metal film 40 from air contact, thereby eliminating the need for passivation on the surface of the metal film 40 and reducing process complexity. The second plastic film 50 covering the surface of the metal film 40 can make the package surface smoother, improving the appearance quality and consistency of the package and facilitating subsequent process steps (such as marking and testing). Furthermore, the provision of the second plastic film 50 increases the thickness and top area of ​​the device package structure, making the overall thickness and morphology of the acoustic device package consistent with those of acoustic devices packaged using traditional processes. This allows for full reuse of the packaging and testing environments and conditions of acoustic devices packaged using traditional processes, such as enabling laser marking on the epoxy plastic film and the reuse of FT packaging and testing machine fixtures, test parameter settings, and carrier tape dimensions. This improves the compatibility of the device package structure with the packaging and testing processes and equipment of traditional packaged devices, further increasing the reuse rate of packaging and testing equipment and processes, and facilitating large-scale production and yield improvement.

[0075] The second plastic film 50 comprises an epoxy film. The epoxy film comprises epoxy molding compound (EMC), also known as epoxy molding compound. EMC is a thermosetting chemical material used in semiconductor packaging. It is made from epoxy resin as the base resin, high-performance phenolic resin as the curing agent, fillers such as silica powder, and various additives.

[0076] It is understandable that in Figure 1 and Figure 2 In the structure shown, the outer lines of the corners of the first plastic film 30, the metal film 40 and the second plastic film 50 are not limited to rectangles. As long as the first plastic film 30, the metal film 40 and the second plastic film 50 can cover the corresponding areas, the outer lines of the corners can also be arcs, straight lines or irregular curves.

[0077] Optionally, the thickness H of the device package structure is in the range of [0.5 mm, 0.6 mm]. For example, the thickness H of the device package structure may be 0.50 mm, 0.52 mm, 0.54 mm, 0.56 mm, 0.58 mm, 0.60 mm, or any value within the range.

[0078] An embodiment of the present disclosure provides an acoustic device, comprising the integrated device packaging structure of any of the aforementioned embodiments.

[0079] The acoustic device of the embodiment of the present disclosure includes the device packaging structure of any of the aforementioned embodiments. Therefore, the acoustic device has all the technical effects of the device packaging structure, which will not be repeated here.

[0080] An embodiment of the present disclosure provides a radio frequency device, including the aforementioned acoustic device.

[0081] The radio frequency device of the embodiment of the present disclosure includes the aforementioned acoustic device, that is, includes the device packaging structure of any of the aforementioned embodiments. Therefore, the radio frequency device has all the technical effects of the device packaging structure, which will not be repeated here.

[0082] An embodiment of the present disclosure provides a vehicle-mounted device, including the aforementioned acoustic device or the aforementioned radio frequency device.

[0083] The vehicle-mounted equipment of the embodiment of the present disclosure includes the aforementioned acoustic device, or the aforementioned radio frequency device, that is, includes the device packaging structure of any of the aforementioned embodiments. Therefore, the vehicle-mounted equipment has all the technical effects of the device packaging structure, which will not be repeated here.

[0084] The following combination Figures 2 to 10 The device packaging method for realizing the integrated device packaging structure provided by the embodiment of the present disclosure is described. The device packaging method specifically includes:

[0085] S100 , preparing a substrate 10 for device packaging.

[0086] Combine Figure 3 As shown, the substrate 10 includes a base 11 and a connection structure 12 integrally formed with the base 11 ; the connection structure 12 includes a metal ring 121 located on a first surface of the base 11 and a pad 122 located in the metal ring 121 .

[0087] Optionally, the substrate 10 is prepared as follows: a base 11 designed with through holes and a circuit diagram is obtained; the base 11 and the connecting material are stacked in a designed order and pressed together to form the substrate 10; the connecting material on the first surface of the substrate 10 is etched to form a metal ring 121 and a solder pad 122 located inside the metal ring 121.

[0088] In this embodiment, the base 11 and the connecting material are stacked in the designed order and then pressed together to form an integrated substrate 10 structure. The pressing process tightly combines the base 11 with the connecting material, avoiding the delamination, falling off or deformation problems that may occur in the traditional bonding process, ensuring the long-term reliability of the substrate 10 and significantly enhancing the mechanical strength and stability of the substrate 10. The integrated molding process simplifies the process of splicing the metal ring 121 on the substrate 10 through the stacking and pressing steps, reduces the process complexity, and improves production efficiency. In addition, the integrated molding process tightly combines the base 11 with the connecting material, reduces the impedance and signal loss in the electrical connection, ensures the electrical connection reliability of the metal ring 121 and the pad 122, optimizes the signal transmission efficiency, and improves the electrical performance of the substrate 10.

[0089] In the substrate 10 of the embodiment of the present disclosure, Figure 3As shown, the connection structure 12 includes a metal ring 121 and a pad 122 located on the first surface of the substrate 11, and a conductive connection portion 123 located within the substrate 11. The pad 122 is located within the metal ring 121, and the metal ring 121 and the pad 122 are respectively conductively connected to the conductive connection portion 123. The electrical connection between the metal ring 121 and the pad 122 can be achieved within the substrate 11, as well as the pre-designed circuit function.

[0090] Optionally, the connection structure 12 further forms another electrical connection point 124 on the second surface of the substrate 11 , and the electrical connection point 124 is conductively connected to the conductive connection portion 123 , forming an electrical connection with the metal ring 121 and the pad 122 inside the substrate 11 .

[0091] Optionally, the substrate 10 includes a plurality of connection structures 12 connected in sequence. Adjacent connection structures 12 are connected by conductive connection portions 123. In each connection structure 12, the following are included: Figure 1 The metal ring 121 and the pad 122 are shown. In this way, the synchronous production of multiple device packaging structures can be achieved, thereby improving production efficiency.

[0092] S200 , connecting the chip 20 to the pads 122 on the first surface of the substrate 10 , so as to place the chip 20 on the first surface of the substrate 10 to form a packaged component.

[0093] Optionally, combined Figure 4 and Figure 5 As shown, the chip 20 is connected to the pad 122 on the first surface of the substrate 10, including: making solder balls 15 bumps on the surface to be connected of the chip 20 according to the position of the pad 122 on the first surface of the substrate 10; and bonding the surface to be connected of the chip 20 flip-chip on the first surface of the substrate 10 so that the solder balls 15 bumps are connected to the pad 122.

[0094] Optionally, combined Figure 5 As shown, during the flip-chip bonding process of the chip 20, for the selected chip 20 and substrate 10, a preset distance L exists between the outer side of the chip 20 and the inner side of the metal ring 121. This can reduce the complexity of the flip-chip bonding process, avoid compression damage caused by contact between the chip 20 and the metal ring 121, and facilitate large-scale production and improve yield.

[0095] S300 , a first plastic packaging layer 31 is provided on the surface of the component to be packaged on which the chip 20 is provided.

[0096] Combine Figure 6 As shown, after the flip-chip bonding process of the chip 20 is completed, the epoxy film is molded to form an inner layer, namely the first plastic encapsulation layer 31, which can play a certain role in airtight sealing, buffering and mechanical protection.

[0097] S400 , removing at least a portion of the first plastic packaging layer 31 on the surface of the metal ring 121 to expose at least a portion of the surface of the metal ring 121 , thereby forming a first plastic packaging film 30 .

[0098] Combine Figure 7 As shown, after the first plastic packaging layer 31 is formed, grooving is performed by laser to remove at least a portion of the first plastic packaging layer 31 on the surface of the metal ring 121 to form a first plastic packaging film 30 .

[0099] Optionally, grooving is performed by laser, including: using a focusing mirror to focus a high-power density laser beam on the first plastic packaging layer 31 on the surface of the metal ring 121; the irradiated material absorbs laser energy and rapidly heats up to a melting, vaporization, ablation or ignition point.

[0100] Optionally, removing at least part of the first plastic packaging layer 31 on the surface of the metal ring 121 includes: removing at least part of the first plastic packaging layer 31 on the surface of the metal ring 121 along the ring surface of the metal ring 121 to expose the bare surface of the annular metal ring 121 .

[0101] Optionally, during the formation of the first plastic film 30, the first plastic layer 31 on the surface of the substrate 10 outside the metal ring 121 can be removed to form a Figure 2 Alternatively, the first plastic film 30 in the chip packaging structure shown in FIG. 1 is retained on the surface of the substrate 10 outside the metal ring 121 to form a first plastic film 31 as shown in FIG. Figure 1 The plastic film 30 in the chip packaging structure shown is shown in FIG. According to different actual process conditions, a suitable process can be selected.

[0102] S500 , a metal layer is formed on the surface of the first plastic film 30 and the exposed first surface of the substrate 10 to form a metal film 40 .

[0103] Combine Figure 8 As shown, a metal film 40 is formed by sputtering, evaporation or electroplating to construct a metal sealing layer to achieve metal airtight sealing of the acoustic device. At the same time, the package has a good electromagnetic shielding effect.

[0104] Optionally, a metal layer is covered on the surface of the first plastic film 30 and the first surface of the exposed substrate 10, including: depositing a first metal on the surface of the first plastic film 30 and the first surface of the exposed substrate 10 to form a seed layer; and depositing a second metal on the surface of the seed layer to form a metal layer body.

[0105] Optionally, the first metal includes Ni or Ti.

[0106] Optionally, the second metal comprises copper.

[0107] Specifically, Ni or Ti material is first deposited by sputtering or evaporation to form a seed layer, and then a copper film is formed as the main body of the metal layer by electroplating or sputtering.

[0108] S600 , a second plastic packaging layer is provided on the surface of the metal film 40 to form a second plastic packaging film 50 .

[0109] Combine Figure 9 As shown, an epoxy film is molded again on the metal film 40 to form a second plastic sealing layer, namely the second plastic sealing film 50. In this way, the airtightness of the acoustic device package can be further improved. At the same time, the second plastic sealing film 50 can protect the metal film 40 from oxidation due to contact with air moisture, and the process of passivation metal layer coating can be omitted, reducing the complexity of the process. In addition, by providing the second plastic sealing film 50 on the surface of the metal film 40, the overall thickness and morphology of the acoustic device packaging product can be consistent with the acoustic device packaged by the traditional process, so that the sealing and testing environment and conditions of the acoustic device packaged by the traditional process can be fully reused, and the compatibility with the sealing and testing process and machine of the traditional packaging device is improved. The reuse rate of the sealing and testing machine and process is further improved, which is conducive to large-scale production and yield improvement.

[0110] Optionally, a second plastic encapsulation layer is provided on the surface of the metal film 40 , including: performing a C-Molding process (Compression Molding) on ​​the surface of the metal film 40 to mold another layer of epoxy resin material on the metal film 40 to form the second plastic encapsulation layer.

[0111] S700: Cut the finished product to obtain multiple device packaging structures.

[0112] Combine Figure 10 As shown, after packaging is completed, the finished product is cut to form a complete, integrated device packaging structure with good airtight sealing and electromagnetic shielding effects, and then multiple acoustic devices can be obtained. The acoustic device can be used in radio frequency equipment or vehicle-mounted equipment.

[0113] The above description and accompanying drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural, logical, electrical, process and other changes. The embodiments represent only possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. Moreover, the terms used in this application are only used to describe the embodiments and are not used to limit the technical solutions described in this application. As used in the technical solutions described in this application, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to also include the plural forms. Similarly, the term "and / or" as used in this application means any and all possible combinations of one or more associated listed items. In addition, when used in this application, the term "comprise" and its variations "comprises" and / or comprising refer to the presence of stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or groups thereof. In the absence of further restrictions, an element defined by the sentence "comprising a..." does not exclude the presence of other identical elements in the process, method or device that includes the element. In this article, each embodiment may focus on the differences from other embodiments, and the same and similar parts between the various embodiments can be referenced to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, then the relevant parts can be referred to the description of the method part.

Claims

1. An integrated device packaging structure, characterized in that: include: A substrate comprising a base and a connecting structure integrally formed with the base; wherein the connecting structure comprises a metal ring located on a first surface of the base, a solder pad located within the metal ring, and a conductive connecting portion located within the base; the metal ring surrounds the solder pad, and the metal ring and the solder pad are respectively conductively connected to the conductive connecting portion, thereby achieving a conductive connection within the base; A chip is connected to the pad and is disposed on the surface of the substrate; a preset distance is provided between the outer side of the chip and the inner side of the metal ring, and the metal ring is capable of surrounding the chip; A first plastic film at least wraps and covers the outer surface of the chip and exposes at least a portion of the surface of the metal ring; a metal film covering the first plastic film and extending to the edge of the substrate to cover the surface of the metal ring; The second plastic film covers the metal film.

2. The device packaging structure according to claim 1, wherein: The material of the matrix includes polymer materials, fiber-reinforced resin composite materials or silicon-based materials; and / or, The material of the connection structure includes metal.

3. The device packaging structure according to claim 1, wherein: Relative to the surface of the substrate, the height of the metal ring is greater than or equal to the height of the pad.

4. The device packaging structure according to claim 1, wherein: The chip is connected to the pads via solder balls.

5. The device packaging structure according to claim 1, wherein: The first plastic film extends to cover a portion of the inner surface of the metal ring.

6. The device packaging structure according to any one of claims 1 to 5, characterized in that: The first plastic film also covers the surface of the substrate outside the metal ring; or, The first plastic film also covers the surface of the substrate outside the metal ring and part of the outer surface of the metal ring, and ensures that the surface of the metal ring has an exposed surface not covered by the first plastic film.

7. The device packaging structure according to any one of claims 1 to 5, characterized in that: The thickness of the first plastic film is in the range of [20 μm, 80 μm]; and / or, The thickness of the metal film is in the range of [20 μm, 80 μm]; and / or, The thickness of the second plastic film ranges from [60 μm, 150 μm].

8. The device packaging structure according to any one of claims 1 to 5, characterized in that: The thickness of the device package structure ranges from [0.5 mm, 0.6 mm].

9. An acoustic device, characterized in that: The invention comprises the integrated device packaging structure according to any one of claims 1 to 8.

10. A radio frequency device, characterized in that: Comprising the acoustic device as claimed in claim 9.

11. A vehicle-mounted device, characterized in that: The method comprises the acoustic device according to claim 9 or the radio frequency device according to claim 10.

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