Display device and method of manufacturing the same

Abstract

The application relates to a display device and a preparation method thereof, which comprises a substrate, a light-emitting structure located on one side of the substrate, the light-emitting structure comprising a transparent conductive layer, and an anti-glare structure located on the side of the light-emitting structure away from the substrate, the anti-glare structure comprising an insulating layer and a glass layer which are arranged in a stack, wherein the insulating layer is located between the transparent conductive layer and the glass layer and is configured to protect the light-emitting structure. The application sets the anti-glare structure on the light-emitting structure, especially the insulating layer, which can fill the concave-convex points on the surface of the glass layer to effectively reduce the reflection of light on the surface of the glass layer. In addition, the insulating layer arranged between the transparent conductive layer and the glass layer effectively reduces the damage of static electricity to the light-emitting structure, effectively prevents the corrosion of harmful substances in the glass layer to the transparent conductive layer, improves the stability and reliability of the light-emitting structure, and prolongs the service life of the display device.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to display devices and methods for their fabrication. Background Technology

[0002] In the field of display technology, the performance of display devices and user experience have always been key research and development priorities. Traditional transparent glass has revealed many problems in practical applications, significantly limiting display quality and ease of use.

[0003] Traditional transparent glass has a high reflectivity, reflecting objects behind it up to 8%. This not only causes interference from reflected light during display, reducing the clarity and contrast of the displayed content, but also makes it difficult for observers to clearly see the information presented on the display device, causing visual impairment. Especially in scenes with strong ambient light, the reflected light and the displayed light overlap, severely affecting the visibility of the display. For example, in outdoor displays, strong sunlight reflection can make the screen content almost illegible.

[0004] Traditional glass also has shortcomings in protecting the internal components of display devices. For example, the surface of optical glass near the RGB chip has invisible bumps that can easily cause reflections, affecting display quality. Furthermore, the glass undergoes multiple processing steps, such as acid etching, and residual inorganic salts and harmful substances may corrode sensitive components like the ITO film, affecting the performance and lifespan of the display device. Additionally, optical glass itself lacks electrostatic discharge (ESD) protection, which can damage the RGB chip and circuit board, leading to display abnormalities. Summary of the Invention

[0005] Based on this, the present application provides a display device and its manufacturing method. By providing an insulating layer between the transparent conductive layer and the glass layer, the damage of static electricity to the light-emitting structure is effectively reduced, and the corrosion of the transparent conductive layer by harmful substances in the glass layer is effectively prevented, thereby improving the stability and reliability of the light-emitting structure.

[0006] This application first provides a display device, the display device comprising:

[0007] substrate;

[0008] A light-emitting structure is located on one side of the substrate, and the light-emitting structure includes a transparent conductive layer;

[0009] An anti-glare structure is located on the side of the light-emitting structure facing away from the substrate, and the anti-glare structure includes an insulating layer and a glass layer stacked together.

[0010] The insulating layer is located between the transparent conductive layer and the glass layer, and the insulating layer is configured to protect the light-emitting structure.

[0011] In one embodiment, the insulating layer comprises a silicon dioxide film.

[0012] In one embodiment, the anti-glare structure further includes a protective layer located on the side of the glass layer opposite to the insulating layer.

[0013] In one embodiment, the glass layer includes a first optical glass, a PVB film, and a second optical glass stacked together, wherein the insulating layer is disposed on the side of the first optical glass facing away from the PVB film.

[0014] The protective layer is an AF film layer.

[0015] In one embodiment, a silicon dioxide film is disposed between the first optical glass and the PVB film;

[0016] And / or, a silicon dioxide film is disposed on the side of the second optical glass facing the PVB film;

[0017] And / or, a silicon dioxide film is disposed on the side of the second optical glass opposite to the PVB film.

[0018] In one embodiment, the anti-glare structure further includes an anti-reflective layer located on the side of the glass layer opposite to the insulating layer.

[0019] In one embodiment, the antireflective layer includes at least one of an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film;

[0020] The thickness of the alumina film is 1 / 4 of the optical thickness, the thickness of the titanium dioxide film is 1 / 2 of the optical thickness, and the thickness of the magnesium fluoride film is 1 / 4 of the optical thickness.

[0021] In one embodiment, the antireflective layer comprises an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film stacked sequentially in the direction away from the glass layer.

[0022] The thickness of the antireflective layer is between 1 μm and 100 μm;

[0023] The glass layer includes optical glass, the thickness of which is between 0.7 mm and 14 mm.

[0024] In one embodiment, the transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer;

[0025] The light-emitting structure is located on one side of the substrate in a first direction. The light-emitting structure includes a first electrode, a first transparent conductive layer, a first semiconductor layer, a second semiconductor layer, a second transparent conductive layer, and a second electrode arranged sequentially along a second direction; wherein the first direction and the second direction intersect.

[0026] In one embodiment, the first transparent conductive layer includes: a first sub-transparent conductive layer located on one side of the substrate in the first direction and between the first electrode and the first semiconductor layer; and a second sub-transparent conductive layer located at least on the side of the first sub-transparent conductive layer away from the substrate.

[0027] The second transparent conductive layer includes: a third sub-transparent conductive layer located on one side of the substrate in the first direction and between the second semiconductor layer and the second electrode; and a fourth sub-transparent conductive layer located at least on the side of the third sub-transparent conductive layer near the substrate.

[0028] This application embodiment also provides a method for manufacturing a display device, the method comprising:

[0029] Provide a substrate;

[0030] A light-emitting structure is formed on one side surface of the substrate; wherein the light-emitting structure includes a transparent conductive layer;

[0031] The anti-glare structure is formed on the side of the light-emitting structure facing away from the substrate; wherein the anti-glare structure includes an insulating layer and a glass layer stacked together, and the insulating layer is sputtered on at least one side of the glass layer by magnetron sputtering.

[0032] The aforementioned display device and its manufacturing method, by setting an anti-glare structure on the light-emitting structure, especially the setting of an insulating layer, can fill the unevenness of the glass layer surface, thereby effectively reducing the reflection of light on the glass layer surface. Compared with the high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced. In addition, the insulating layer set between the transparent conductive layer and the glass layer effectively reduces the damage of static electricity to the light-emitting structure, and at the same time effectively prevents harmful substances in the glass layer from corroding the transparent conductive layer, improving the stability and reliability of the light-emitting structure and extending the service life of the display device. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the overall structure of a display device provided according to some embodiments of this application.

[0034] Figure 2 This is a schematic diagram of the overall structure of the anti-glare structure provided according to some embodiments of this application. Figure 1 .

[0035] Figure 3 This is a schematic diagram of the overall structure of the anti-glare structure provided according to some embodiments of this application. Figure 2 .

[0036] Figure 4 This is one of the structural schematic diagrams of the light-emitting structure provided according to some embodiments of this application.

[0037] Figure 5 This is a schematic diagram illustrating the light-emitting principle of a light-emitting structure provided according to some embodiments of this application.

[0038] Figure 6 This is a cross-sectional schematic diagram of a light-emitting structure provided according to some embodiments of this application.

[0039] Figure 7 This is a cross-sectional structural schematic diagram of a display device provided according to some embodiments of this application.

[0040] Figure 8 This is a flowchart of a method for manufacturing a display device according to some embodiments of this application.

[0041] 10. Substrate;

[0042] 20. Light-emitting structure; 200. First electrode; 210. First sub-electrode; 220. Second sub-electrode; 400. First semiconductor layer; 500. Second semiconductor layer; 700. Second electrode; 710. Third sub-electrode; 720. Fourth sub-electrode;

[0043] 30. Transparent conductive layer; 300. First transparent conductive layer; 310. First sub-transparent conductive layer; 320. Second sub-transparent conductive layer; 600. Second transparent conductive layer; 610. Third sub-transparent conductive layer; 620. Fourth sub-transparent conductive layer;

[0044] 90. Anti-glare structure; 910. Insulating layer; 920. Glass layer; 921. First optical glass; 922. PVB film; 923. Second optical glass; 924. Silicon dioxide film; 930. Protective layer; 940. Anti-reflective layer; 941. Alumina film; 942. Titanium dioxide film; 943. Magnesium fluoride film. Detailed Implementation

[0045] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0046] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0047] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0048] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0049] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0050] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0051] As described in the background section, traditional transparent glass has a high reflectivity, reflecting up to 8% of objects behind it. This not only causes interference from reflected light during display, reducing the clarity and contrast of the displayed content, but also makes it difficult for observers to clearly see the information presented by the display device, causing visual impairment. Especially in scenarios with strong ambient light, the reflected light and the displayed light overlap, severely affecting the visibility of the display. For example, in outdoor displays, strong sunlight reflection can make the screen content almost unreadable.

[0052] Traditional glass also has shortcomings in protecting the internal components of display devices. For optical glass close to RGB chips, invisible surface imperfections can easily cause reflections, affecting display quality. Furthermore, the glass undergoes multiple processing steps, such as acid etching, and residual inorganic salts and harmful substances may corrode sensitive components like the ITO film, impacting the display device's performance and lifespan. Additionally, optical glass lacks electrostatic discharge (ESD) protection, which can damage RGB chips and circuit boards, leading to display malfunctions.

[0053] Furthermore, traditional display devices, lacking effective anti-fingerprint and anti-smudge measures, easily attract fingerprints, oil, and other stains to their glass surfaces during daily use. These stains not only affect aesthetics but also interfere with light transmission, reducing display quality. Moreover, the cleaning process is cumbersome, causing considerable inconvenience to users.

[0054] Based on the aforementioned problems, this application provides a display device and its manufacturing method. By setting an insulating layer on the side of the glass layer near the transparent conductive layer, the reflectivity can be effectively reduced, and the protection capability of the chip structure can also be improved.

[0055] See Figure 2 and Figure 3 , Figure 2 This is a schematic diagram of the overall structure of the anti-glare structure provided according to some embodiments of this application. Figure 1 . Figure 3 This is a schematic diagram of the overall structure of the anti-glare structure provided according to some embodiments of this application. Figure 2The display device provided in one embodiment of this application may include a substrate 10, a light-emitting structure 20, and an anti-glare structure 90.

[0056] The light-emitting structure 20 is located on one side of the substrate 10, and the light-emitting structure 20 includes a transparent conductive layer 30; the anti-glare structure 90 is located on the side of the light-emitting structure 20 facing away from the substrate 10, and the anti-glare structure 90 includes an insulating layer 910 and a glass layer 920 stacked together; wherein, the insulating layer 910 is located between the transparent conductive layer 30 and the glass layer 920, and the insulating layer 910 is configured to protect the light-emitting structure 20.

[0057] It is understood that the display device in this example can be a Mini-LED display device or a Micro-LED display device, which is basically composed of a substrate 10, a light-emitting structure 20, and an anti-glare structure 90. The substrate 10 is usually a PCB board or glass, while the light-emitting structure 20 includes an RGB Mini-LED chip or an RGB Micro-LED chip, as well as electrodes connected to the chip.

[0058] The aforementioned light-emitting structure 20 also includes a transparent conductive layer 30. The transparent conductive layer 30 can be made of indium tin oxide (ITO), and an ITO thin film is prepared using methods such as magnetron sputtering. In this example, the main function of the ITO transparent conductive layer 30 is to connect to the ground wire of the RGB chip to discharge excess static electricity and prevent damage to the RGB chip and circuit board. Of course, the transparent conductive layer 30 can also be made of zinc oxide or other transparent conductive materials; no limitation is made here.

[0059] By disposing an insulating layer 910 between the transparent conductive layer 30 and the glass layer 920, in one example, the insulating layer 910 comprises a silicon dioxide thin film 924. Specifically, a silicon dioxide thin film 924 of a certain thickness can be deposited on the glass layer 920 as the insulating layer 910 using a plasma-enhanced chemical vapor deposition (PECVD) process. The silicon dioxide thin film 924 can effectively fill in the unevenness of the optical glass surface and reduce reflection. More importantly, as the insulating layer 910, the silicon dioxide thin film 924 can reduce the damage of static electricity to the RGB chip and prevent the precipitation of potentially residual inorganic salts and other effective substances in the optical glass from corroding the ITO transparent conductive film.

[0060] In this application, by providing an anti-glare structure 90 on the light-emitting structure 20, especially the provision of an insulating layer 910, the unevenness of the surface of the glass layer 920 can be filled, thereby effectively reducing the reflection of light on the surface of the glass layer 920. Compared with the high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced. In addition, the insulating layer 910 provided between the transparent conductive layer 30 and the glass layer 920 effectively reduces the damage of static electricity to the light-emitting structure 20, and at the same time effectively prevents harmful substances in the glass layer 920 from corroding the transparent conductive layer 30, thereby improving the stability and reliability of the light-emitting structure 20 and extending the service life of the display device.

[0061] Below, we will combine the appendix Figure 1 - Appendix Figure 7 The specific structure of the display device provided in the embodiments of this application will be described in detail.

[0062] like Figure 2 As shown, in some embodiments, the anti-glare structure 90 further includes a protective layer 930 located on the side of the glass layer 920 opposite to the insulating layer 910.

[0063] Specifically, the protective layer 930 is located on the side of the glass layer 920 opposite to the insulating layer 910; it can also be understood as the outermost layer of the entire display device. The protective layer 930 can be made of polyethylene terephthalate (PET) film, which can be bonded to the outside of the glass layer 920 by hot pressing. Because PET film has good mechanical properties and chemical stability, it can protect the glass layer 920 from external scratches, abrasions, and other damage. Of course, in addition to the aforementioned PET film, polyurethane (PU) coatings, silicone coatings, etc., can also be used as materials for the protective layer 930, as long as they can protect the outside of the glass layer 920; no specific limitations are made here.

[0064] The protective layer 930 in this example can effectively enhance the protective performance of the glass layer 920, reduce the risk of damage to the glass layer 920 caused by external factors, and extend the service life of the display device; moreover, the protective layer 930 can effectively prevent the surface of the glass layer 920 from being contaminated with stains, scratches, etc.

[0065] In one example, protective layer 930 is an AF (Anti-Finger Print) film. Specifically, the AF film, or anti-fingerprint film, primarily functions by using its unique surface chemistry to reduce surface energy, thereby increasing the contact angle of fingerprints, oil stains, and other contaminants on its surface, making it difficult for them to adhere to the surface. This achieves the effects of preventing fingerprints and oil stains, while also giving the object surface a smoother feel and improving the user experience.

[0066] More specifically, the AF film can be prepared using a baking-heated perfluoropolyether coating, with a certain thickness on the side of the glass layer 920 facing away from the PVB film 922 via spin coating. Of course, in addition to baking-heated AF films, non-baking-heated or vacuum magnetron sputtering methods can also be used to prepare AF films, and no specific limitations are imposed here.

[0067] like Figure 2 As shown, in some embodiments, the glass layer 920 includes a first optical glass 921, a PVB (Polyvinyl Butyral Film) film, and a second optical glass 923 stacked together, with an insulating layer 910 disposed on the side of the first optical glass 921 facing away from the PVB film 922.

[0068] Specifically, the first optical glass 921 and the second optical glass 923 can be made of thin, high-transmittance optical glass. A PVB film 922 of a certain thickness can be sandwiched between them using a hot-pressing process to form a laminated glass structure. The PVB film 922 can be formed by extruding polyvinyl butyral resin with plasticizer 3GO (triethylene glycol diisooctanoate). The PVB film 922 has good adhesion to the optical glass and is transparent, heat-resistant, cold-resistant, moisture-resistant, and has high mechanical strength. For example, when the glass is subjected to external impact, the PVB film 922 can absorb and disperse the impact energy, prevent the further propagation of cracks, and effectively enhance the overall performance of the glass layer 920.

[0069] In this example, the first optical glass 921 and the second optical glass 923 are bonded into a sandwich structure by a PVB film 922, which ensures the high light transmittance and optical stability of the glass layer 920, while improving the mechanical strength and safety of the glass layer 920.

[0070] like Figure 2 As shown, in some embodiments, a silicon dioxide film 924 is disposed between the first optical glass 921 and the PVB film 922. Specifically, the silicon dioxide film 924 can be deposited on the surface of the first optical glass 921 by chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes, so as to fill the small defects on the surface of the optical glass, reduce light reflection, and at the same time enhance the adhesion between the first optical glass 921 and the PVB film 922, thereby improving the stability of the glass layer 920 structure.

[0071] In one example, a silicon dioxide film 924 is disposed on the side of the second optical glass 923 facing the PVB film 922. Specifically, in the same manner as described above, the silicon dioxide film 924 is deposited on the side of the first optical glass 921. By depositing silicon dioxide films 924 on different optical glass surfaces, the unevenness of the optical glass surface can be further filled, reducing the reflection of light inside the glass layer 920.

[0072] like Figure 2 As shown, in one example, a silicon dioxide film 924 is disposed on the side of the second optical glass 923 facing away from the PVB film 922. Specifically, in this example, silicon dioxide films 924 can be deposited on both sides of the first optical glass 921 as needed, or silicon dioxide films 924 can be deposited on both sides of the second optical glass 923 to further fill in the unevenness of the optical glass surface, reduce the reflection of light inside the glass layer 920, further improve the optical performance of the display device, and make the displayed content clearer. Of course, silicon dioxide films 924 can also be selectively deposited on one or both sides of a certain optical glass according to the actual required thickness of the glass layer 920, but there is no specific limitation.

[0073] The thickness of the aforementioned silicon dioxide film 924 can be set according to different optical glass surface conditions and the performance requirements of the actual device. For example, for optical glass with relatively large surface roughness, the thickness of the silicon dioxide film 924 can be appropriately increased, but no specific limit is imposed.

[0074] The addition of the silicon dioxide film 924 in this example can also enhance the adhesion between the optical glass and the PVB film 922, improve the stability of the glass layer 920 structure, reduce problems such as delamination of the glass layer 920 caused by external forces, and improve the reliability of the display device.

[0075] In addition to the aforementioned glass layer 920 and protective layer 930 structure, it can also be, for example... Figure 3 As shown, in some embodiments, the anti-glare structure 90 further includes an anti-reflection layer 940, which is located on the side of the glass layer 920 opposite to the insulating layer 910.

[0076] Specifically, the antireflective layer 940 can be one or more thin films with different refractive indices and thicknesses to improve the antireflective effect through the synergistic effect between the multiple films. In one example, the antireflective layer 940 includes at least one of an aluminum oxide film 941, a titanium dioxide film 942, and a magnesium fluoride film 943; the aluminum oxide film 941 has a thickness of 1 / 4 optical thickness, the titanium dioxide film 942 has a thickness of 1 / 2 optical thickness, and the magnesium fluoride film 943 has a thickness of 1 / 4 optical thickness.

[0077] Understandably, the antireflective layer 940 uses a magnesium fluoride (MgF2) film. For example, a MgF2 film with a thickness of 1 / 4 optical thickness (approximately 80 nm at a center wavelength of 550 nm) can be prepared on the outside of the glass layer 920 using electron beam evaporation as the antireflective layer 940. The MgF2 film can utilize the principle of light interference to reduce the reflection of light on the surface of the glass layer 920, thereby improving the light transmittance of the display device.

[0078] Similarly, in addition to MgF2 film, alumina (Al2O3) film and titanium dioxide (TiO2) film can also be used as antireflection layer materials. Al2O3 film has good chemical stability and mechanical properties, while TiO2 film has a high refractive index. By combining different materials, antireflection effects can be achieved over a wider wavelength range.

[0079] Of course, a multilayer antireflection film structure can be adopted. For example, on the basis of MgF2 film, one or more thin films with different refractive indices and thicknesses can be added. For example, first prepare an Al2O3 film with a thickness of 1 / 4 optical thickness, and then prepare a TiO2 film with a thickness of 1 / 2 optical thickness on it. Through the synergistic effect between the multilayer films, the antireflection effect can be further improved.

[0080] Depending on the application scenario and wavelength range requirements, the thickness and order of each film layer can be adjusted to achieve a more balanced anti-reflection effect.

[0081] This example demonstrates efficient antireflection over a wide wavelength range through a multilayer antireflective film structure with specific thickness and material combinations. This adapts to the display requirements of different colors of light, improving the color reproduction and visual effect of the display device. Furthermore, the synergistic effect of the multilayer film structure enhances the optical performance stability of the antireflective layer 940, reducing the impact of changes in environmental temperature, humidity, and other factors on the antireflective effect, thus improving the reliability of the display device.

[0082] In addition, in this example, the MgF2 film as the top layer not only has the effect of reducing reflection, but also makes the coated optical glass itself self-cleaning, thus achieving multi-functionality.

[0083] Of course, the aforementioned protective layer 930 can also be provided outside the antireflection layer 940 provided in this example, but there are no specific restrictions.

[0084] like Figure 3As shown, in some embodiments, the antireflection layer 940 includes an aluminum oxide film 941, a titanium dioxide film 942, and a magnesium fluoride film 943 sequentially stacked along the direction away from the glass layer 920; the thickness of the antireflection layer 940 is between 1 μm and 100 μm; the glass layer 920 includes optical glass, the thickness of which is between 0.7 mm and 14 mm.

[0085] Specifically, the total thickness of the antireflective layer 940 and the thickness of each film layer can be more precisely optimized according to different application scenarios and optical performance requirements. For example, the total thickness of the antireflective layer 940 is 5 μm, with the aluminum oxide film 941 having a thickness of 1 μm, the titanium dioxide film 942 having a thickness of 2.5 μm, and the magnesium fluoride film 943 having a thickness of 1.5 μm. The glass layer 920 is 2 mm thick optical glass.

[0086] It should be noted that the optical glass in this example undergoes multiple polishing processes, particularly etching with acidic substances (hydrofluoric acid, sulfuric acid, etc.), which may result in incomplete cleaning. By placing a silicon dioxide thin film 924 between the optical glass and the transparent electrode layer, the precipitation of inorganic salts and other harmful substances from the optical glass can prevent corrosion of the transparent electrode layer, thus providing protection.

[0087] The antireflection layer 940 provided in this application has a reflectivity of less than 0.5% in the entire optically sensitive range (410 nm - 680 nm) and a light transmittance of up to 95%.

[0088] See Figure 1 , Figures 4 to 7 As shown, Figure 1 This is a schematic diagram of the overall structure of a display device provided according to some embodiments of this application. Figure 4 This is one of the structural schematic diagrams of the light-emitting structure provided according to some embodiments of this application. Figure 5 This is a schematic diagram illustrating the light-emitting principle of a light-emitting structure provided according to some embodiments of this application. Figure 6 This is a cross-sectional schematic diagram of a light-emitting structure provided according to some embodiments of this application. Figure 7 This is a cross-sectional structural schematic diagram of a display device provided according to some embodiments of this application. In some embodiments, the transparent conductive layer 30 includes a first transparent conductive layer 300 and a second transparent conductive layer 600; the light-emitting structure 20 is located on one side of the substrate 10 in a first direction, and the light-emitting structure 20 includes a first electrode 200, a first transparent conductive layer 300, a first semiconductor layer 400, a second semiconductor layer 500, a second transparent conductive layer 600, and a second electrode 700 arranged sequentially along a second direction; wherein the first direction and the second direction intersect.

[0089] It should be noted that the first direction mentioned in the embodiments of this application can be a vertical direction, and the second direction can be a horizontal direction; the first direction can also be horizontal, and the second direction can also be vertical. For ease of explanation of the light-emitting structure 20 provided in this application, in the embodiments of this application, [the following will be used]. Figure 4 The OY direction is taken as the first direction, and Figure 4 The OX direction is taken as the second direction.

[0090] The materials of the first electrode 200 and the second electrode 700 can be common conductive materials such as copper and aluminum. The first semiconductor layer 400 and the second semiconductor layer 500 can be semiconductor layers of different conductivity types. For example, the first semiconductor layer 400 can be a P-type semiconductor layer, and the second semiconductor layer 500 can be an N-type semiconductor layer; alternatively, the first semiconductor layer 400 can be an N-type semiconductor layer, and the second semiconductor layer 500 can be a P-type semiconductor layer. Accordingly, the electrode connected to the P-type semiconductor layer serves as the positive electrode, and the electrode connected to the N-type semiconductor layer serves as the negative electrode.

[0091] The first transparent conductive layer 300 can be used to conduct current between the first electrode 200 and the first semiconductor layer 400, and the second transparent conductive layer 600 can be used to conduct current between the second electrode 700 and the second semiconductor layer 500. The materials of the first transparent conductive layer 300 and the second transparent conductive layer 600 can be one or a combination of at least two of ITO (indium tin oxide), GTO (cadmium-doped tin oxide), GZO (gallium-doped zinc oxide), and ZnO (zinc oxide).

[0092] The light-emitting principle of the light-emitting structure 20 is as follows: Figure 5 As shown, after a forward voltage is applied through the first electrode 200 and the second electrode 700, holes injected from the P region into the N region and electrons injected from the N region into the P region recombine with electrons in the N region and holes in the P region near the PN junction, respectively, generating spontaneous emission fluorescence. It can be understood that after applying a forward voltage, a relatively narrow light-emitting layer is generated between the first semiconductor layer 400 and the second semiconductor layer 500.

[0093] In this embodiment, compared to the traditional method of sequentially arranging a substrate 10, two semiconductor layers, a transparent conductive layer 30, and an electrode in a first direction, the first electrode 200, the first transparent conductive layer 300, the first semiconductor layer 400, the second semiconductor layer 500, the second transparent conductive layer 600, and the second electrode 700 in this application are arranged along a second direction. This can increase the contact area between the semiconductor layer and the transparent conductive layer 30, increase the conductive area of ​​the light-emitting structure 20, and thus improve the conductivity and luminous efficiency of the light-emitting structure 20.

[0094] In some embodiments, the first transparent conductive layer 300 includes: a first sub-transparent conductive layer 310 located on one side of the substrate 10 in the first direction and between the first electrode 200 and the first semiconductor layer 400; a second sub-transparent conductive layer 32030 located at least on the side of the first sub-transparent conductive layer 310 away from the substrate 10; the second transparent conductive layer 600 includes: a third sub-transparent conductive layer 610 located on one side of the substrate 10 in the first direction and between the second semiconductor layer 500 and the second electrode 700; and a fourth sub-transparent conductive layer 620 located at least on the side of the third sub-transparent conductive layer 610 close to the substrate 10.

[0095] Specifically, the second sub-transparent conductive layer 320 may be disposed only on the side of the first sub-transparent conductive layer 310 away from the substrate 10, or it may be disposed on the side of the first sub-transparent conductive layer 310 away from the substrate 10, as well as on part or all of the surface of the first electrode 200 and the first semiconductor layer 400 away from the substrate 10.

[0096] The "T"-shaped transparent conductive layer 30 formed by the first sub-transparent conductive layer 310 and the second sub-transparent conductive layer 320 increases the contact area between the first semiconductor layer 400 and the first transparent conductive layer 300, as well as between the first electrode 200 and the first transparent conductive layer 300, thereby increasing the conductive area of ​​the light-emitting structure 20 and improving the light-emitting efficiency of the light-emitting structure 20.

[0097] The fourth sub-transparent conductive layer 620 may be located on the side of the third sub-transparent conductive layer 610 near the substrate 10, or it may be located on the side of the third sub-transparent conductive layer 610 near the substrate 10, as well as part or all of the surface of the second semiconductor layer 500 and the second electrode 700 near the substrate 10.

[0098] In this embodiment, the inverted "T"-shaped transparent conductive layer 30 formed by the third sub-transparent conductive layer 610 and the fourth sub-transparent conductive layer 620 increases the contact area between the second semiconductor layer 500 and the second transparent conductive layer 600, as well as the second electrode 700 and the second transparent conductive layer 600, thereby increasing the conductive area of ​​the light-emitting structure 20 and improving the luminous efficiency of the light-emitting structure 20.

[0099] In some embodiments, the first electrode 200 includes a first sub-electrode 210 and a second sub-electrode 220. The first sub-electrode 210 is located on one side of the substrate 10 in a first direction. The second sub-electrode 220 is located on the side of the first sub-electrode 210 layer away from the substrate 10. The extension length of the second sub-electrode 220 in the second direction is less than the extension length of the first sub-electrode 210 in the second direction.

[0100] In some embodiments, the second electrode 700 includes a third sub-electrode 710 and a fourth sub-electrode 720. The third sub-electrode 710 is located on the side of the second transparent conductive layer 600 away from the second semiconductor layer 500, and the fourth sub-electrode 720 is located on the side of the third sub-electrode 710 away from the substrate 10. The extension length of the fourth sub-electrode 720 in the second direction is less than the extension length of the third sub-electrode 710 in the second direction.

[0101] Based on the same inventive concept, such as Figure 8 As shown, Figure 8 This is a flowchart illustrating a method for fabricating a display device according to some embodiments of this application. Embodiments of this application also provide a method for fabricating a display device, which may include:

[0102] Step S101: Provide a substrate 10;

[0103] Step S102: A light-emitting structure 20 is formed on one side surface of the substrate 10; wherein the light-emitting structure 20 includes a transparent conductive layer 30.

[0104] In step S103, an anti-glare structure 90 is formed on the side of the light-emitting structure 20 facing away from the substrate 10; wherein, the anti-glare structure 90 includes an insulating layer 910 and a glass layer 920 stacked together, and the insulating layer 910 is sputtered on at least one side of the glass layer 920 by magnetron sputtering.

[0105] It is understood that a light-emitting structure 20 can be formed on one side surface of the substrate 10 in the first direction using a patterned coating process, magnetron sputtering process, printing process or spraying process.

[0106] By forming a light-emitting structure 20 on one side surface of the substrate 10 in a first direction, the light-emitting structure 20 includes a first electrode 200, a first transparent conductive layer 300, a first semiconductor layer 400, a second semiconductor layer 500, a second transparent conductive layer 600, and a second electrode 700 arranged sequentially along a second direction. Compared with the conventional method of sequentially arranging the substrate 10, two semiconductor layers, transparent conductive layer 30, and electrode in the first direction, the technical solution of this application can increase the contact area between the semiconductor layer and the transparent conductive layer 30, increase the conductive area of ​​the light-emitting structure 20, thereby improving the conductivity and luminous efficiency of the light-emitting structure 20.

[0107] Furthermore, such as Figure 6 As shown, step S102 includes steps S1021-S1027.

[0108] S1021, a fourth sub-transparent conductive layer 620 is formed on one side of the substrate 10 in the first direction.

[0109] Please see Figure 6A fourth sub-transparent conductive layer 620 can be formed on one side of the substrate 10 in the first direction by using patterned coating process or magnetron sputtering process.

[0110] S1022, at least the fourth sub-transparent guide

[0111] A second semiconductor layer 500 is formed on the first portion of the surface of the electrical layer 620 away from the substrate 10.

[0112] Please see Figure 6 The semiconductor material can be sputtered onto at least a first portion of the surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 using a patterned coating process, magnetron sputtering process, etc., to form the second semiconductor layer 500. In addition to the first portion of the surface of the fourth sub-transparent conductive layer 620 away from the substrate 10, the second semiconductor layer 500 can also be formed on a portion of the surface of the substrate 10 near the fourth sub-transparent conductive layer 620.

[0113] S1023, a first semiconductor layer 400 is formed on one side of the substrate 10 in the first direction and on one side of the second semiconductor layer 500 in the second direction.

[0114] Please see Figure 6 The first semiconductor layer 400 can be formed by sputtering semiconductor material onto one side of the substrate 10 in the first direction and the second semiconductor layer 500 in the second direction using patterned coating process or magnetron sputtering process.

[0115] S1024, a first electrode 200 is formed on one side of the substrate 10 in the first direction, on the side of the first semiconductor layer 400 away from the second semiconductor layer 500; a first opening is provided between the first electrode 200 and the first semiconductor layer 400, and the first opening exposes the substrate 10.

[0116] Please see Figure 6 The first electrode 200 can be formed by sputtering conductive materials such as aluminum onto one side of the substrate 10 in the first direction, or the side of the first semiconductor layer 400 away from the second semiconductor layer 500, using patterned coating processes or magnetron sputtering processes. The first opening is used to position the first transparent conductive layer 310 to be formed. Since the first electrode 200 is opaque, the first transparent conductive layer 300 is provided between the first electrode 200 and the first semiconductor layer 400 to increase the luminous brightness of the light-emitting structure 20.

[0117] S1025, a second electrode 700 is formed on the second portion surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 and on the side of the second semiconductor layer 500 away from the first semiconductor layer 400; a second opening is provided between the second electrode 700 and the second semiconductor layer 500, and the second opening exposes the fourth sub-transparent conductive layer 620.

[0118] Please see Figure 6 The second electrode 700 can be formed on the second portion of the surface of the fourth sub-transparent conductive layer 620 away from the substrate 10 and on the side of the second semiconductor layer 500 away from the first semiconductor layer 400 using processes such as patterned coating and magnetron sputtering. The second opening is used to position the third sub-transparent conductive layer 610 to be formed.

[0119] S1026, a first sub-transparent conductive layer 310 is formed in the first opening, and a third sub-transparent conductive layer 610 is formed in the second opening.

[0120] Please see Figure 6 A first sub-transparent conductive layer 310 can be formed in the first opening using a patterned coating process, a magnetron sputtering process, or other similar techniques, and a third sub-transparent conductive layer 610 can be formed in the second opening.

[0121] S1027, at least on the side of the first sub-transparent conductive layer 310 away from the substrate 10, a second sub-transparent conductive layer 320 is formed.

[0122] Please see Figure 6 The second sub-transparent conductive layer 320 can be formed on at least the side of the first sub-transparent conductive layer 310 away from the substrate 10 using processes such as patterned coating or magnetron sputtering. In addition to the side of the first sub-transparent conductive layer 310 away from the substrate 10, the second sub-transparent conductive layer 320 can also be formed on part or all of the surface of the first electrode 200 and the first semiconductor layer 400 away from the substrate 10.

[0123] In step S103, as Figure 7 As shown, an insulating layer 910 is disposed between the transparent conductive layer 30 and the glass layer 920. In one example, the insulating layer 910 includes a silicon dioxide thin film 924. Specifically, a silicon dioxide thin film 924 of a certain thickness can be deposited on the glass layer 920 as the insulating layer 910 using a magnetron sputtering process. The silicon dioxide thin film 924 can effectively fill the unevenness of the optical glass surface and reduce reflection. More importantly, as the insulating layer 910, the silicon dioxide thin film 924 can reduce the damage of static electricity to the RGB chip and prevent the precipitation of inorganic salts and other effective substances that may remain in the optical glass from corroding the ITO transparent conductive film.

[0124] In this application, by providing an anti-glare structure 90 on the light-emitting structure 20, especially the provision of an insulating layer 910, the unevenness of the surface of the glass layer 920 can be filled, thereby effectively reducing the reflection of light on the surface of the glass layer 920. Compared with the high reflectivity of traditional transparent glass, the reflectivity of the display device in this example is significantly reduced. In addition, the insulating layer 910 provided between the transparent conductive layer 30 and the glass layer 920 effectively reduces the damage of static electricity to the light-emitting structure 20, and at the same time effectively prevents harmful substances in the glass layer 920 from corroding the transparent conductive layer 30, thereby improving the stability and reliability of the light-emitting structure 20 and extending the service life of the display device.

[0125] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0126] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A display device, characterized in that, The display device includes: substrate; A light-emitting structure is located on one side of the substrate, and the light-emitting structure includes a transparent conductive layer; An anti-glare structure is located on the side of the light-emitting structure facing away from the substrate, and the anti-glare structure includes an insulating layer and a glass layer stacked together. The insulating layer is located between the transparent conductive layer and the glass layer, and the insulating layer is configured to protect the light-emitting structure. The glass layer includes a first optical glass, a PVB film, and a second optical glass stacked together, with the insulating layer disposed on the side of the first optical glass facing away from the PVB film.

2. The display device according to claim 1, characterized in that, The insulating layer comprises a silicon dioxide film.

3. The display device according to claim 1, characterized in that, The anti-glare structure also includes a protective layer located on the side of the glass layer opposite to the insulating layer.

4. The display device according to claim 3, characterized in that, The protective layer is an AF film layer.

5. The display device according to claim 4, characterized in that, A silicon dioxide film is disposed between the first optical glass and the PVB film; And / or, a silicon dioxide film is disposed on the side of the second optical glass facing the PVB film; And / or, a silicon dioxide film is disposed on the side of the second optical glass opposite to the PVB film.

6. The display device according to claim 1, characterized in that, The anti-glare structure also includes an anti-reflective layer, which is located on the side of the glass layer opposite to the insulating layer.

7. The display device according to claim 6, characterized in that, The antireflective layer includes at least one of an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film.

8. The display device according to claim 7, characterized in that, The antireflective layer comprises, along the direction away from the glass layer, an aluminum oxide film, a titanium dioxide film, and a magnesium fluoride film stacked sequentially. The thickness of the antireflective layer is between 1 μm and 100 μm; The glass layer includes optical glass, the thickness of which is between 0.7 mm and 14 mm.

9. The display device according to any one of claims 1-8, characterized in that, The transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer; The light-emitting structure is located on one side of the substrate in a first direction. The light-emitting structure includes a first electrode, a first transparent conductive layer, a first semiconductor layer, a second semiconductor layer, a second transparent conductive layer, and a second electrode arranged sequentially along a second direction; wherein the first direction and the second direction intersect.

10. The display device according to claim 9, characterized in that, The first transparent conductive layer includes: a first sub-transparent conductive layer located on one side of the substrate in the first direction and between the first electrode and the first semiconductor layer; and a second sub-transparent conductive layer located at least on the side of the first sub-transparent conductive layer away from the substrate. The second transparent conductive layer includes: a third sub-transparent conductive layer located on one side of the substrate in the first direction and between the second semiconductor layer and the second electrode; and a fourth sub-transparent conductive layer located at least on the side of the third sub-transparent conductive layer near the substrate.

11. A method for manufacturing a display device, characterized in that, The preparation method includes: Provide a substrate; A light-emitting structure is formed on one side surface of the substrate; wherein the light-emitting structure includes a transparent conductive layer; An anti-glare structure is formed on the side of the light-emitting structure facing away from the substrate; wherein, the anti-glare structure includes an insulating layer and a glass layer stacked together, and the insulating layer is sputtered on at least one side of the glass layer by magnetron sputtering; The glass layer includes a first optical glass, a PVB film, and a second optical glass stacked together, with the insulating layer disposed on the side of the first optical glass facing away from the PVB film.

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