Silicon wafer degumming method and device

Abstract

The invention relates to the technical field of silicon wafer cleaning, and provides a silicon wafer degumming method and device, and the degumming method comprises the following steps: preliminary cleaning: carrying out the preliminary cleaning of a cut silicon wafer, and removing the impurities on the surfaces of a crystal support and the silicon wafer; cleaning with a degumming agent: soaking the primarily cleaned silicon wafers with the degumming agent, and flushing the connection parts of the silicon wafers and the adhesive layers from the side parts with the assistance of high-pressure fluid, so as to enlarge gaps between the adjacent silicon wafers to promote the degumming agent to permeate into the adhesive layers; and cleaning again, namely cleaning the silicon wafer after degumming again to remove residual impurities. According to the arrangement, high-pressure fluid is assisted to impact the connecting part of the silicon wafer and the adhesive layer from at least one side, and the silicon wafer is burst open in the degumming agent, so that a gap between adjacent silicon wafers is enlarged to promote the degumming agent to quickly permeate into the adhesive layer, the degumming efficiency is improved, the degumming cost is reduced, and the flowing of the degumming agent can be enhanced while the silicon wafer is burst open underwater to assist degumming. The degumming agent is uniform, and the degumming stability is better.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer cleaning, and particularly to a method and device for removing glue from silicon wafers. Background Art

[0002] With the continuous growth of the global demand for renewable energy, photovoltaic power generation, as a clean and sustainable energy form, has been widely applied and developed. Silicon wafers are the core materials of photovoltaic cells, and their quality directly affects the performance of photovoltaic cells. The cleanliness of the silicon wafer surface is a key factor affecting the quality of silicon wafers.

[0003] In the current silicon wafer processing, the silicon wafers after cutting usually need to go through a series of processing steps to remove the adhesive used in the cutting process (i.e., the glue removal process). These steps mainly include three main stages: spray pre-cleaning, ultrasonic soaking, and high-temperature glue removal. Among them, high-temperature glue removal, as the key step, generally softens the glue layer by high-temperature soaking or supplemented by bubbling, ultrasonic, etc., so as to realize the separation of the silicon wafer and the glue layer.

[0004] However, it is found in actual applications that it is very difficult for the degreasing agent to quickly penetrate into the glue layer by using the above high-temperature glue removal method. Higher degreasing temperature, longer soaking time, and higher chemical agent concentration are often required to accelerate the softening of the glue layer. The degreasing efficiency is low and the cost is high.

[0005] Therefore, how to improve the degreasing efficiency and reduce the degreasing cost has become an important issue to be solved urgently at present. Summary of the Invention

[0006] The present invention provides a method and device for removing glue from silicon wafers, which are used to solve the defects of low degreasing efficiency and high cost in the prior art of high-temperature soaking degreasing, and can prompt the degreasing agent to quickly penetrate into the glue layer, thereby effectively improving the degreasing efficiency and reducing the degreasing cost.

[0007] The invention provides a method for removing glue from silicon wafers, including the following steps: Preliminary cleaning: The silicon wafers after cutting are preliminarily cleaned to remove the impurities on the crystal carrier and the silicon wafer surface; Degreasing agent cleaning: The silicon wafers after preliminary cleaning are soaked with a degreasing agent, and at the same time, high-pressure fluid is used to flush the connection part between the silicon wafer and the glue layer from the side, so as to increase the gap between adjacent silicon wafers to prompt the degreasing agent to penetrate into the glue layer; Re-cleaning: The silicon wafers after degreasing are re-cleaned to remove the remaining impurities.

[0008] According to a method for removing glue from silicon wafers provided by the present invention, the preliminary cleaning includes: Spray pre-cleaning: The silicon wafers after cutting are spray pre-cleaned to preliminarily remove impurities; For the first ultrasonic cleaning, the silicon wafers after pre-cleaning are subjected to the first ultrasonic cleaning to further remove impurities.

[0009] According to a silicon wafer degumming method provided by the present invention, the re-cleaning includes: The second ultrasonic cleaning is to perform the second ultrasonic cleaning on the silicon wafers after degumming to preliminarily remove the remaining impurities; The third ultrasonic cleaning is to perform the third ultrasonic cleaning on the silicon wafers after degumming to further remove the remaining impurities.

[0010] According to a silicon wafer degumming method provided by the present invention, in the spray pre-cleaning step, the spray water is used to spray the crystal carrier and the silicon wafers from both sides, the spray pressure is 0.2 - 0.5 Mpa, and the spray time is 100 - 150 seconds; And / or, in the first ultrasonic cleaning step, the silicon wafers after spray pre-cleaning are ultrasonically soaked and rinsed with clean water, the rinsing temperature is 30 - 40 °C, and the rinsing time is 50 - 100 seconds.

[0011] According to a silicon wafer degumming method provided by the present invention, in the second ultrasonic cleaning step, the degummed silicon wafers are ultrasonically overflow cleaned, and at the same time, high-pressure liquid flow is used to flush from at least one side of the silicon wafers, the cleaning temperature is 40 - 50 °C, and the flushing time is 50 - 100 seconds; And / or, in the third ultrasonic cleaning step, the silicon wafers after the second ultrasonic cleaning are ultrasonically overflow cleaned, the rinsing temperature is 30 - 40 °C, and the rinsing time is 30 - 60 seconds.

[0012] According to a silicon wafer degumming method provided by the present invention, in the degumming agent cleaning step, the degumming temperature is 45 - 60 °C, and the degumming time is 500 - 600 seconds.

[0013] The present invention also provides a silicon wafer degumming device, including: A preliminary cleaning module, which is suitable for preliminarily cleaning the silicon wafers after cutting to remove the impurities on the crystal carrier and the surfaces of the silicon wafers; A high-temperature degumming tank, which is used to soak the silicon wafers after preliminary cleaning with a degumming agent. At least one side of the high-temperature degumming tank is provided with a first nozzle, and the first nozzle is used to spray high-pressure fluid to scour the connection part between the silicon wafers and the glue layer from the side, so as to increase the gap between adjacent silicon wafers to promote the penetration of the degumming agent into the glue layer; A re-cleaning module, which is suitable for re-cleaning the silicon wafers after degumming to remove the remaining impurities.

[0014] According to a silicon wafer degumming device provided by the present invention, the preliminary cleaning module includes: A spray cleaning tank, which is used to perform spray pre-cleaning on the silicon wafers after cutting to preliminarily remove impurities; The first ultrasonic cleaning tank is used for initially ultrasonically cleaning the pre-cleaned silicon wafers to further remove impurities.

[0015] According to a silicon wafer degumming device provided by the present invention, the re-cleaning module includes: The second ultrasonic cleaning tank is used for secondarily ultrasonically cleaning the pre-cleaned silicon wafers to initially remove the remaining impurities; The third ultrasonic cleaning tank is used for tertially ultrasonically cleaning the silicon wafers after degumming is completed to further remove the remaining impurities.

[0016] According to a silicon wafer degumming device provided by the present invention, at least one side of the second ultrasonic cleaning tank is provided with a second spray head for spraying a high-pressure liquid flow from at least one side of the silicon wafer to wash the silicon wafer.

[0017] For the silicon wafer degumming method and device provided by the present invention, during silicon wafer degumming, first, the initially cleaned module is used to initially clean the silicon wafers after cutting to remove impurities such as silicon mud and cutting fluid on the crystal carrier and the surface of the silicon wafers. Then, the initially cleaned silicon wafers are placed in a high-temperature degumming tank and soaked with a high-temperature degumming liquid. At the same time, the first spray head on the side of the high-temperature degumming tank sprays a high-pressure fluid to wash the connection part between the silicon wafer and the glue layer from the side. Under the action of the fluid pressure, the adhered silicon wafers are washed apart, thereby increasing the gap between adjacent silicon wafers to promote the rapid penetration of the degumming liquid into the glue layer to soften the glue layer, and the silicon wafers are separated from the glue layer. The silicon wafers after degumming are re-cleaned by the re-cleaning module to remove impurities such as glue filaments and degumming agents remaining on the silicon wafers. While soaking the silicon wafers with a degumming agent at high temperature, a high-pressure fluid is used to impact the connection part between the silicon wafer and the glue layer from at least one side. The silicon wafers are washed apart in the degumming agent, thereby increasing the gap between adjacent silicon wafers to promote the rapid penetration of the degumming agent into the glue layer, improving the degumming efficiency, reducing the degumming cost. In addition, when using underwater washing to separate the silicon wafers to assist degumming, the flow of the degumming agent can be strengthened, the degumming agent can be made uniform, and the degumming stability is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 It is a schematic flow chart of the silicon wafer degumming method provided by the embodiment of the present invention.

[0020] Figure 2 It is a schematic diagram of the principle of the silicon wafer degumming method provided by the embodiment of the present invention.

[0021] Figure 3It is a schematic structural diagram of the silicon wafer degumming device provided by an embodiment of the present invention.

[0022] Reference numerals: 10. Preliminary cleaning module; 11. Spray cleaning tank; 12. First ultrasonic cleaning tank; 20. High-temperature degumming tank; 21. First spray head; 30. Re-cleaning module; 31. Second ultrasonic cleaning tank; 310. Second spray head; 32. Third ultrasonic cleaning tank. Detailed implementation manners

[0023] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0024] To better understand the silicon wafer degumming method and device provided by the embodiments of the present invention, its application background will be introduced first. As the core material of photovoltaic cells, the quality of silicon wafers directly affects the performance of photovoltaic cells, and the cleanliness of the silicon wafer surface is a key factor affecting the quality of silicon wafers.

[0025] During the silicon wafer processing, to keep the silicon rod stable during the cutting process, the silicon rod is generally fixed on the crystal carrier through an adhesive. After cutting, the silicon wafers usually need to go through a series of processing steps to remove the adhesive used during the cutting process (i.e., the degumming process). These steps mainly include three main stages: spray pre-cleaning, ultrasonic soaking, and high-temperature degumming. Among them, high-temperature degumming is a key step, and generally, the adhesive layer is softened by high-temperature soaking or supplemented with bubbling, ultrasonic, etc., so as to realize the separation of the silicon wafer and the adhesive layer.

[0026] However, it is found in actual applications that due to the very small gaps between the cut silicon wafers and the silicon wafers being closely attached to each other, it is difficult for the degumming agent to quickly penetrate into the adhesive layer. Therefore, higher degumming temperatures, longer soaking times, and higher chemical agent concentrations are often required to accelerate the softening of the adhesive layer, resulting in low degumming efficiency and high costs. Therefore, how to improve the degumming efficiency and reduce the degumming cost has become an important issue that needs to be solved urgently at present.

[0027] In view of the above problems and findings, the embodiments of the present invention provide a silicon wafer degumming method and device, which can prompt the degumming agent to quickly penetrate into the adhesive layer, thereby effectively improving the degumming efficiency and reducing the degumming cost.

[0028] The following will be combined with Figures 1 - 3 Describe the silicon wafer degumming method and device of the embodiments of the present invention.

[0029] Figure 1It is a schematic flow chart of the silicon wafer debonding method provided by an embodiment of the present invention. As Figure 1 shown, the method includes the following steps: Step S10, preliminary cleaning: The silicon wafer after cutting is preliminarily cleaned to remove impurities on the crystal carrier and the surface of the silicon wafer.

[0030] Specifically, after the silicon wafer is cut, impurities such as silicon mud and cutting fluid will remain on the crystal carrier and the surface of the silicon wafer. Through preliminary cleaning, large contaminants and loose impurities on the surface of the silicon wafer can be removed, ensuring the cleanliness of the silicon wafer, and thus guaranteeing the smooth progress of subsequent cleaning processes.

[0031] In an embodiment of the present invention, step S10 includes: Step S100, spray pre-cleaning: The silicon wafer after cutting is spray pre-cleaned to preliminarily remove impurities.

[0032] Specifically, the cleaning liquid (such as tap water, deionized water or a solution with a cleaning agent) is pressurized by a high-pressure pump to form a high-speed and high-pressure jet flow and sprayed onto the surface of the silicon wafer. The impact force and kinetic energy of the water flow are used to peel off and remove the dirt on the surface of the silicon wafer, achieving the purpose of removing impurities on the surface of the silicon wafer. The spray water can spray and clean the crystal carrier and the silicon wafer from at least one side. In order to reduce the cleaning dead angle and improve the pre-cleaning effect, in this embodiment, the spray water sprays the crystal carrier and the silicon wafer from both sides.

[0033] In the spray pre-cleaning step, the spray time and spray pressure can be reasonably adjusted according to the actual situation. It is necessary to ensure that the spray water can fully peel off and remove the dirt on the surface of the silicon wafer, and at the same time avoid damage to the surface of the silicon wafer caused by over-cleaning. Specifically, during the cleaning process, the cleaning effect can be monitored by visual inspection or using detection equipment, so as to adjust the spray time and pressure in a timely manner.

[0034] In a specific embodiment of the present invention, the spray pressure is 0.2 - 0.5 Mpa, and the spray time is 100 - 150 seconds.

[0035] Step S110, primary ultrasonic cleaning: The silicon wafer after pre-cleaning is subjected to primary ultrasonic cleaning to further remove impurities.

[0036] Specifically, although spray pre-cleaning can remove most of the dirt and impurities, some tiny particles or stubborn stains may still adhere to the surface of the silicon wafer. Ultrasonic cleaning uses the cavitation effect of ultrasonic waves to generate a large number of tiny bubbles in the liquid. When these bubbles burst, they will generate a strong impact force, which can effectively peel off and remove these residual impurities, further improving the cleanliness of the silicon wafer.

[0037] Specifically, in the initial ultrasonic cleaning step, the silicon wafers after spray pre-cleaning are ultrasonically soaked and rinsed with clean water. Compared with the traditional chemical cleaning method, the ultrasonic soaking and rinsing with clean water mainly rely on physical effects. It can not only effectively remove the dirt and impurities on the surface of the silicon wafers, but also reduce the use of chemical cleaning agents and reduce environmental pollution.

[0038] In the initial ultrasonic cleaning, parameters such as ultrasonic frequency, cleaning temperature, and cleaning time can be reasonably adjusted according to the actual situation. It is necessary to ensure that the dirt and impurities on the surface of the silicon wafers can be fully removed, and at the same time, avoid damage to the surface of the silicon wafers caused by over-cleaning.

[0039] In a specific embodiment of the present invention, the temperature of the initial ultrasonic cleaning is 30 - 40 °C, and the cleaning time is 50 - 100 seconds.

[0040] Step S20: Degumming agent cleaning. The silicon wafers after preliminary cleaning are soaked with a degumming agent, and at the same time, high-pressure fluid is used to flush the connection part between the silicon wafers and the glue layer from the side, so as to increase the gap between adjacent silicon wafers and promote the degumming agent to penetrate into the glue layer.

[0041] Specifically, the silicon wafers after the initial ultrasonic cleaning are soaked with a degumming agent. Since the gaps between the silicon wafers are very small after cutting and the silicon wafers are closely attached together, it is difficult for the degumming agent to quickly penetrate into the glue layer. Therefore, traditionally, only by extending the soaking time and increasing the concentration of the chemical solution can the degumming efficiency be improved. In the embodiment of the present invention, while the silicon wafers are soaked with a degumming agent, high-pressure fluid is used to impact the connection part between the silicon wafers and the glue layer from at least one side. The silicon wafers are flushed open in the degumming agent, so as to increase the gap between adjacent silicon wafers and promote the degumming agent to quickly penetrate into the glue layer (for the specific principle, see Figure 2 ) to improve the degumming efficiency, reduce the degumming cost. In addition, while using underwater flushing to assist in degumming, the flow of the degumming agent can be strengthened, the degumming agent can be made uniform, and the degumming stability is better.

[0042] Specifically, the high-pressure fluid can be a high-pressure jet of the degumming agent, and it impacts the connection part between the silicon wafers and the glue layer from opposite sides to improve the flushing effect on the attached silicon wafers, thereby improving the degumming efficiency. The pressure of the high-pressure fluid can be adjusted according to the specific degumming situation. It is necessary to ensure that the high-pressure fluid can fully flush open the attached silicon wafers, so that the degumming agent can quickly and fully penetrate into the glue layer, and at the same time, avoid damage to the surface of the silicon wafers caused by too high pressure. The type of the degumming agent can be selected according to actual needs. For example, organic acid-based degumming agents can be used. There is no specific limitation in the embodiment of the present invention. The composition and ratio of each degumming agent can refer to the prior art and will not be elaborated in the embodiment of the present invention.

[0043] In the degumming and cleaning step, parameters such as the dosage of the degumming agent, the degumming temperature, and the degumming time can be flexibly adjusted according to the actual situation. As a specific embodiment of the present invention, the dosage of the degumming agent is 25 to 30 L, and the degumming temperature is 50 to 55 °C.

[0044] Step S30: Re-cleaning. After the degumming of the silicon wafer is completed, the silicon wafer is re-cleaned to remove the remaining impurities.

[0045] Specifically, after the degumming is completed, there will be residual gum filaments and impurities such as the degumming agent on the silicon wafer. By re-cleaning the silicon wafer after the degumming is completed, the residual impurities on the silicon wafer can be effectively removed, ensuring the smooth progress of subsequent processing steps.

[0046] In an embodiment of the present invention, step S30 includes: Step S300: Secondary ultrasonic cleaning. After the degumming of the silicon wafer is completed, the silicon wafer is subjected to secondary ultrasonic cleaning to preliminarily remove the remaining impurities.

[0047] Specifically, in the secondary ultrasonic cleaning step, ultrasonic overflow cleaning is used for the degummed silicon wafer. Ultrasonic overflow cleaning combines the advantages of ultrasonic cleaning and overflow cleaning. It can not only effectively remove the dirt and impurities attached to the surface of the silicon wafer by using the cavitation effect generated by ultrasonic waves in the liquid, but also improve the cleaning efficiency and cleaning effect by using overflow cleaning.

[0048] Specifically, in the secondary ultrasonic cleaning step, during the ultrasonic cleaning, a high-pressure liquid flow is used to wash the silicon wafer from at least one side. The high-pressure liquid flow sprays the cleaning liquid onto the surface of the object at a high speed and high pressure through devices such as nozzles, forming a strong impact force, which synergizes with the cavitation effect of ultrasonic waves to improve the stripping efficiency of dirt and impurities on the surface of the silicon wafer and improve the cleaning effect. The pressure of the high-pressure liquid flow can be adjusted according to the actual situation to avoid damaging the surface of the silicon wafer due to excessive pressure.

[0049] In this embodiment, during the ultrasonic cleaning, a high-pressure liquid flow washes the silicon wafer from one side to improve the cleaning efficiency.

[0050] Step S310: Tertiary ultrasonic cleaning. After the degumming of the silicon wafer is completed, the silicon wafer is subjected to tertiary ultrasonic cleaning to further remove the remaining impurities.

[0051] Specifically, in the tertiary ultrasonic cleaning step, ultrasonic overflow cleaning is used for the silicon wafer after the secondary ultrasonic cleaning to further remove the dirt and impurities on the surface of the silicon wafer and ensure that the cleanliness of the surface of the silicon wafer meets the requirements.

[0052] It is understandable that in the secondary ultrasonic cleaning step and the tertiary ultrasonic cleaning step, parameters such as ultrasonic frequency, cleaning temperature, and cleaning time can be reasonably adjusted according to the actual situation. It is necessary to ensure that the dirt and impurities on the surface of the silicon wafer can be fully removed, and at the same time, avoid damage to the surface of the silicon wafer caused by over-cleaning.

[0053] In a specific embodiment of the present invention, the temperature of the secondary ultrasonic cleaning is 40 - 50 °C, and the cleaning time is 50 - 100 seconds. The temperature of the tertiary ultrasonic cleaning is 30 - 40 °C, and the cleaning time is 30 - 60 seconds.

[0054] For further illustration, the present invention will be elaborated in detail through the following embodiments. It should be noted that there are no special restrictions on the experimental raw materials used in the following embodiments of the present invention, and they can all be obtained by purchasing in the market or according to the conventional methods well-known to those skilled in the art. All the equipment involved, unless otherwise specified, are general equipment in the art and those skilled in the art can operate according to the general knowledge and technical means in the industry.

[0055] Example 1 In the spray pre-cleaning step, tap water is used to spray and pre-clean the sawn silicon rod. The spraying direction is from both sides, the spraying time is 100 s, and the spraying pressure is 0.5 MPa. In the primary ultrasonic cleaning step, the rinsing temperature is 30 °C, and the rinsing time is 80 s. In the degumming cleaning step, the dosage of the degumming agent is 25 L, the temperature of the degumming tank is 50 °C, and the degumming time is 600 s. In the secondary ultrasonic cleaning step, the cleaning temperature is 40 °C, and the cleaning time is 100 s. In the tertiary ultrasonic cleaning step, the rinsing temperature is 30 °C, and the rinsing time is 60 s.

[0056] Example 2 In the spray pre-cleaning step, tap water is used to spray and pre-clean the sawn silicon rod. The spraying direction is from both sides, the spraying time is 100 s, and the spraying pressure is 0.5 MPa. In the primary ultrasonic cleaning step, the rinsing temperature is 30 °C, and the rinsing time is 80 s. In the degumming cleaning step, the dosage of the degumming agent is 30 L, the temperature of the degumming tank is 55 °C, and the degumming time is 500 s. In the secondary ultrasonic cleaning step, the cleaning temperature is 40 °C, and the cleaning time is 100 s. In the tertiary ultrasonic cleaning step, the rinsing temperature is 30 °C, and the rinsing time is 60 s.

[0057] Example 3 The difference between this example and Example 1 and Example 2 is that in the degumming cleaning step, high-temperature immersion degumming is adopted (i.e., high-pressure fluid assistance is not used), the dosage of the degumming agent is 30 L, the temperature of the degumming tank is 55 °C, and the degumming time is 800 s.

[0058] The degumming methods of Examples 1 - 3 are respectively used for degumming the silicon wafers, and the degumming rate and the residual rate of the gum filaments are measured. The results are shown in the following table.

[0059] Table 1 shows the debonding rate and the residual rate of adhesive filaments measured by using the debonding methods of Examples 1 to 3 for silicon wafers.

[0060] As can be seen from the above table, while soaking for debonding at high temperature, supplemented by flushing the connection part between the silicon wafer and the adhesive layer with high-pressure fluid from the side, the debonding temperature can be effectively reduced, the debonding time can be shortened, the debonding rate can be increased and the residual rate of adhesive filaments can be reduced, so as to improve the debonding efficiency and reduce the debonding cost.

[0061] The silicon wafer debonding device provided by the present invention will be described below. The silicon wafer debonding device described below can be correspondingly referred to the silicon wafer debonding method described above.

[0062] Refer to Figure 3 , a silicon wafer debonding device, including a preliminary cleaning module 10, a high-temperature debonding tank 20 and a re-cleaning module 30; wherein, the preliminary cleaning module 10 is suitable for preliminarily cleaning the silicon wafers after cutting to remove impurities on the crystal carrier and the surface of the silicon wafers; the high-temperature debonding tank 20 is used to soak the preliminarily cleaned silicon wafers with a debonding agent, and at least one side of the high-temperature debonding tank 20 is provided with a first spray head 21, and the first spray head 21 is used to spray high-pressure fluid to flush the connection part between the silicon wafer and the adhesive layer from the side, so as to increase the gap between adjacent silicon wafers to promote the debonding agent to penetrate into the adhesive layer; the re-cleaning module 30 is used to re-clean the silicon wafers after debonding to remove the remaining impurities.

[0063] In actual work, first, the silicon wafers after cutting are preliminarily cleaned by the preliminary cleaning module 10 to remove impurities such as silicon mud and cutting fluid on the crystal carrier and the surface of the silicon wafers, and then the preliminarily cleaned silicon wafers are put into the high-temperature debonding tank 20 and soaked with a high-temperature debonding solution. At the same time, the first spray head 21 on the side of the high-temperature debonding tank 20 sprays high-pressure fluid to flush the connection part between the silicon wafer and the adhesive layer from the side, and the adhered silicon wafers are flushed open under the action of the fluid pressure, so as to increase the gap between adjacent silicon wafers to promote the rapid penetration of the debonding solution into the adhesive layer to soften the adhesive layer, separate the silicon wafer from the adhesive layer, and the silicon wafers after debonding are re-cleaned by the re-cleaning module 30 to remove impurities such as adhesive filaments and debonding agent remaining on the silicon wafers.

[0064] While soaking the silicon wafers with a debonding agent at high temperature, supplemented by impacting the connection part between the silicon wafer and the adhesive layer with high-pressure fluid from at least one side, the silicon wafers are flushed open in the debonding agent, so as to increase the gap between adjacent silicon wafers to promote the rapid penetration of the debonding agent into the adhesive layer, improve the debonding efficiency, reduce the debonding cost. In addition, while using underwater flushing to open the silicon wafers to assist debonding, the flow of the debonding agent can be strengthened, the debonding agent can be made uniform, and the debonding stability is better.

[0065] It should be noted here that the high-temperature degumming tank 20, as a key device for wafer degumming treatment, its specific structure can refer to the prior art. The specific specifications and models of the high-temperature degumming tank 20 can be configured according to actual needs and are not specifically limited in the embodiments of the present invention. In addition, the first nozzle 21 can be connected to the inner cavity of the high-temperature degumming tank 20 through a high-pressure pump. While performing high-temperature degumming, the high-pressure pump extracts the degumming liquid in the high-temperature degumming tank 20 and sprays it through the first nozzle 21 to form a high-pressure liquid flow of the degumming liquid to impact the wafer from the side, realizing auxiliary degumming.

[0066] In one embodiment of the present invention, the preliminary cleaning module 10 includes a spray cleaning tank 11 and a first ultrasonic cleaning tank 12; wherein, the spray cleaning tank 11 is used for spray pre-cleaning the cut wafers to preliminarily remove impurities; the first ultrasonic cleaning tank 12 is used for performing primary ultrasonic cleaning on the pre-cleaned wafers to further remove impurities.

[0067] Specifically, the cleaning liquid (such as tap water, deionized water or a solution with a cleaning agent) is pressurized through a high-pressure pump to form a high-speed and high-pressure jet flow and sprayed onto the wafer surface to strip and remove larger impurities on the wafer. The wafers after spray pre-cleaning are placed in the first ultrasonic cleaning tank 12 for ultrasonic immersion rinsing, and the cavitation effect of ultrasonic waves is used to remove smaller dirt and impurities on the wafer surface.

[0068] In one embodiment of the present invention, the re-cleaning module 30 includes a second ultrasonic cleaning tank 31 and a third ultrasonic cleaning tank 32; the second ultrasonic cleaning tank 31 is used for performing secondary ultrasonic cleaning on the pre-cleaned wafers to preliminarily remove residual impurities; the third ultrasonic cleaning tank 32 is used for performing tertiary ultrasonic cleaning on the wafers after degumming to further remove residual impurities.

[0069] Specifically, the degummed wafers are placed in the second ultrasonic cleaning tank 31 for ultrasonic overflow cleaning to preliminarily remove impurities such as the residual degumming liquid and gum filaments on the wafer surface. Then the wafers are placed in the third ultrasonic cleaning tank 32 for ultrasonic overflow cleaning to further remove the impurities on the wafer surface and ensure that the cleanliness of the wafer surface meets the requirements.

[0070] In one embodiment of the present invention, at least one side of the second ultrasonic cleaning tank 31 is provided with a second nozzle 310 for spraying a high-pressure liquid flow from at least one side of the wafer to rinse the wafer.

[0071] Specifically, the first nozzle 21 can be connected to the inner cavity of the second ultrasonic cleaning tank 31 through a high-pressure pump. While performing ultrasonic overflow cleaning, the high-pressure pump extracts the degumming liquid in the second ultrasonic cleaning tank 31 and sprays it through the second nozzle 310 to form a high-pressure liquid flow to impact the wafer from the side, realizing auxiliary cleaning.

[0072] It should be noted here that the specific structures and working principles of the above-mentioned devices such as the spray cleaning tank and the ultrasonic cleaning tank can be referred to the prior art, and will not be elaborated in the embodiments of the present invention. The specification parameters of each device can be selected according to actual needs and are not specifically limited in the embodiments of the present invention.

[0073] It can be understood that, without conflict, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0074] Through the wafer degumming method and device provided by the embodiments of the present invention, while soaking the wafer with a degumming agent at high temperature, a high-pressure fluid is used to impact the connection part between the wafer and the adhesive layer from at least one side. The wafer is washed away in the degumming agent, thereby increasing the gap between adjacent wafers to promote the rapid penetration of the degumming agent into the adhesive layer, improving the degumming efficiency, reducing the degumming cost. In addition, when washing away the wafer underwater to assist degumming, the flow of the degumming agent can be strengthened, the degumming agent can be made uniform, and the degumming stability is better.

[0075] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A silicon wafer degumming method, characterized in that: The following steps are involved: Preliminary cleaning: perform preliminary cleaning on the silicon wafer after cutting to remove impurities on the wafer tray and the surface of the silicon wafer; Degumming agent cleaning: soak the silicon wafer after preliminary cleaning with degumming agent, and use high-pressure fluid to flush the connection between the silicon wafer and the adhesive layer from the side, so as to increase the gap between adjacent silicon wafers and promote the degumming agent to penetrate into the adhesive layer; Clean again, clean the silicon wafer after degumming to remove remaining impurities.

2. The silicon wafer degumming method according to claim 1, characterized in that: The preliminary cleaning includes: Spray pre-cleaning: spray pre-cleaning the cut silicon wafers to initially remove impurities; The first ultrasonic cleaning is performed on the pre-cleaned silicon wafer to further remove impurities.

3. The silicon wafer degumming method according to claim 1, characterized in that: The re-cleaning comprises: Secondary ultrasonic cleaning: After degumming, the silicon wafer is subjected to secondary ultrasonic cleaning to preliminarily remove the remaining impurities; The silicon wafer is ultrasonically cleaned three times after degumming to further remove residual impurities.

4. The silicon wafer degumming method according to claim 2, characterized in that: In the spray pre-cleaning step, spray water is sprayed on the wafer tray and the silicon wafer from both sides, the spray pressure is 0.2-0.5 MPa, and the spray time is 100-150 seconds; And / or, in the first ultrasonic cleaning step, the silicon wafer after spray pre-cleaning is rinsed by ultrasonic immersion in clean water, the rinsing temperature is 30-40° C., and the rinsing time is 50-100 seconds.

5. The silicon wafer degumming method according to claim 3, characterized in that: In the secondary ultrasonic cleaning step, the degummed silicon wafer is cleaned by ultrasonic overflow, and at the same time, it is rinsed from at least one side of the silicon wafer with a high-pressure liquid flow, the cleaning temperature is 40-50° C., and the rinsing time is 50-100 seconds; And / or, in the three ultrasonic cleaning steps, the silicon wafer after the second ultrasonic cleaning is cleaned by ultrasonic overflow, the rinsing temperature is 30-40° C., and the rinsing time is 30-60 seconds.

6. The silicon wafer degumming method according to any one of claims 1 to 5, characterized in that: In the degumming agent cleaning step, the degumming temperature is 45 to 60° C. and the degumming time is 500 to 600 seconds.

7. A silicon wafer degumming device, characterized in that: include: The preliminary cleaning module is suitable for preliminary cleaning of the silicon wafer after cutting to remove impurities on the wafer tray and the surface of the silicon wafer; A high-temperature degumming tank, used to soak the silicon wafers after preliminary cleaning with a degumming agent, wherein at least one side of the high-temperature degumming tank is provided with a first nozzle, and the first nozzle is used to spray high-pressure fluid to flush the connection between the silicon wafer and the adhesive layer from the side, thereby increasing the gap between adjacent silicon wafers to promote the degumming agent to penetrate into the adhesive layer; The re-cleaning module is suitable for re-cleaning the silicon wafer after debonding to remove the remaining impurities.

8. The silicon wafer degumming device according to claim 7, characterized in that: The preliminary cleaning module comprises: The spray cleaning tank is used to spray pre-clean the cut silicon wafers to initially remove impurities; The first ultrasonic cleaning tank is used to perform initial ultrasonic cleaning on the pre-cleaned silicon wafer to further remove impurities.

9. The silicon wafer degumming device according to claim 7, characterized in that: The re-cleaning module comprises: The second ultrasonic cleaning tank is used to perform a second ultrasonic cleaning on the pre-cleaned silicon wafer to preliminarily remove the remaining impurities; The third ultrasonic cleaning tank is used to perform three ultrasonic cleanings on the silicon wafer after degumming to further remove the remaining impurities.

10. The silicon wafer degumming device according to claim 9, characterized in that: A second nozzle is provided on at least one side of the second ultrasonic cleaning tank, for spraying a high-pressure liquid flow from at least one side of the silicon wafer to rinse the silicon wafer.

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