Semiconductor device
By designing a semiconductor device containing a specific electrode region structure, the problem of insufficient performance of semiconductor devices in the prior art is solved, and high performance effects of low on-resistance and stable switching characteristics are achieved.
Patent Information
- Application Number
- CN202410807830.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-13
- Filing Date
- 2024-06-21
- Publication Date
- 2025-06-17
AI Technical Summary
Existing semiconductor devices have shortcomings in improving their characteristics and are difficult to meet high-performance requirements.
A semiconductor device is designed, which includes a first electrode, a second electrode, a third electrode including silicon, a semiconductor member and a first insulating member. The third electrode is positioned in the first direction between the first electrode and the second electrode, including the first electrode region and the second electrode region, and meets specific electrode region concentration conditions to optimize the formation of carrier regions and current flow.
With this structure, the performance of the semiconductor device can be significantly improved, including low on-resistance and stable switching characteristics, to meet high performance requirements.
Smart Images
Figure CN120166741A_ABST
Abstract
Description
[0001] This application is based on Japanese Patent Application No. 2023-210463 (filing date: December 13, 2023), and claims priority therefrom. This application incorporates the entire contents of that application by reference thereto. Technical Field
[0002] Embodiments of the present invention relate to semiconductor devices. Background Art
[0003] For semiconductor devices such as transistors, for example, it is desired to improve characteristics. Summary of the Invention
[0004] Embodiments of the present invention provide a semiconductor device with improved characteristics.
[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode containing silicon, a semiconductor member, and a first insulating member. The position of the third electrode in a first direction from the first electrode toward the second electrode is between the position of the first electrode in the first direction and the position of the second electrode in the first direction. The third electrode includes a first electrode region and a second electrode region. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer contains Al x1 Ga 1－x1 N (0 ≤ x1 < 1). The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. A second direction from the first partial region toward the first electrode intersects the first direction. A direction from the second partial region toward the second electrode is along the second direction. A direction from the third partial region toward the first electrode region is along the second direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction. The second semiconductor layer contains Al x2 Ga 1－x2N(0 < x2 ≤ 1, x1 < x2). The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The direction from the fourth partial region toward the first semiconductor portion is along the second direction. The direction from the fifth partial region toward the second semiconductor portion is along the second direction. The first electrode region is between the first semiconductor portion and the second semiconductor portion in the first direction. A part of the first semiconductor portion is disposed between the fourth partial region and the second electrode region in the second direction. The first insulating member is disposed between the semiconductor member and the third electrode. The first electrode region and the second electrode region satisfy a first condition or a second condition. In the first condition, the second electrode region contains a first element, and the first electrode region does not contain the first element, and the first element includes at least one selected from the group consisting of P and As. In the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region.
[0006] According to the semiconductor device having the above structure, a semiconductor device with improved characteristics can be provided. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 FIG. is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.
[0008] REFERENCE SIGNS
[0009] 10, 20: First and second semiconductor layers; 10B: Nitride layer; 10C: Carrier region; 10M: Semiconductor member; 10S: Substrate; 11 to 15: First to fifth partial regions; 21, 22: First and second semiconductor portions; 31: First compound member; 31a to 31e: First to fifth compound regions; 41, 42: First and second insulating members; 41a to 41e: First to fifth insulating regions; 42a, 42b: First and second insulating portions; 51 to 53: First to third electrodes; 53a to 53d: First to fourth electrode regions; 110: Semiconductor device; D1 to D3: First to third directions DETAILED DESCRIPTION
[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0011] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as in reality. Even when showing the same part, depending on the drawing, the mutual dimensions and ratios may sometimes be shown differently.
[0012] In the specification and the accompanying drawings of the present application, for elements that are the same as those already described in the previous drawings, the same reference numerals are added and detailed descriptions are appropriately omitted.
[0013] (First Embodiment)
[0014] Figure 1 FIG. is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.
[0015] As Figure 1 shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a semiconductor member 10M, and a first insulating member 41.
[0016] Let the first direction D1 from the first electrode 51 toward the second electrode 52 be the X-axis direction. Let one direction perpendicular to the X-axis direction be the Z-axis direction. Let the direction perpendicular to the X-axis direction and the Z-axis direction be the Y-axis direction.
[0017] The third electrode 53 contains silicon. The third electrode 53 may contain, for example, polysilicon. In the third electrode 53, silicon (polysilicon) may contain impurities that generate conductivity.
[0018] The position of the third electrode 53 in the first direction D1 is between the position of the first electrode 51 in the first direction D1 and the position of the second electrode 52 in the first direction D1. The third electrode 53 includes a first electrode region 53a and a second electrode region 53b. The third electrode 53 may further include a third electrode region 53c.
[0019] The semiconductor member 10M includes a first semiconductor layer 10 and a second semiconductor layer 20. The first semiconductor layer 10 contains Al x1 Ga 1－x1 N (0 ≤ x1 < 1). The composition ratio x1 may be, for example, 0 or more and 0.10 or less. The first semiconductor layer 10 contains, for example, GaN. The second semiconductor layer 20 contains Al x2 Ga 1－x2 N (0 < x2 ≤ 1, x1 < x2). The composition ratio x2 may be, for example, 0.15 or more and 0.45 or less. The second semiconductor layer 20 contains, for example, AlGaN.
[0020] The first semiconductor layer 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, and a fifth partial region 15. The second direction D2 from the first partial region 11 toward the first electrode 51 intersects the first direction D1. The second direction D2 is, for example, the Z-axis direction.
[0021] In the direction from the second part region 12 towards the second electrode 52 along the second direction D2. In the direction from the third part region 13 towards the first electrode region 53a along the second direction D2. The region that coincides with the first electrode 51 in the second direction D2 corresponds to the first part region 11. The region that coincides with the second electrode 52 in the second direction D2 corresponds to the second part region 12. The region that coincides with the first electrode region 53a in the second direction D2 corresponds to the third part region 13.
[0022] The first electrode 51, the second electrode 52, and the third electrode 53 may extend along the third direction D3. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction.
[0023] The position of the fourth part region 14 in the first direction D1 is between the position of the first part region 11 in the first direction D1 and the position of the third part region 13 in the first direction D1. The position of the fifth part region 15 in the first direction D1 is between the position of the third part region 13 in the first direction D1 and the position of the second part region 12 in the first direction D1. Among the first part region 11, the second part region 12, the third part region 13, the fourth part region 14, and the fifth part region 15, the boundaries between them may be clear or unclear.
[0024] The second semiconductor layer 20 includes a first semiconductor part 21 and a second semiconductor part 22. In the direction from the fourth part region 14 towards the first semiconductor part 21 along the second direction D2. In the direction from the fifth part region 15 towards the second semiconductor part 22 along the second direction D2.
[0025] The first electrode region 53a is provided between the first semiconductor part 21 and the second semiconductor part 22 in the first direction D1. A part of the first semiconductor part 21 is provided between the fourth part region 14 and the second electrode region 53b in the second direction D2.
[0026] The first insulating member 41 is provided between the conductor member 10M and the third electrode 53.
[0027] The first electrode region 53a and the second electrode region 53b satisfy the following first condition or second condition. In the first condition, the second electrode region 53b contains a first element, and the first element contains at least one selected from the group consisting of P and As. In the first condition, the first electrode region 53a does not contain the first element. The first element functions as an n-type impurity, for example.
[0028] In the second condition, the second concentration of the first element in the second electrode region 53b is higher than the first concentration of the first element in the first electrode region 53a.
[0029] For example, the first electrode 51 is electrically connected to the first semiconductor portion 21. The second electrode 52 is electrically connected to the second semiconductor portion 22.
[0030] For example, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 is, for example, a source electrode. The second electrode 52 is, for example, a drain electrode. The third electrode 53 is, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.
[0031] The first semiconductor layer 10 includes a region facing the second semiconductor layer 20. A carrier region 10C is formed in this region. The carrier region 10C is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).
[0032] In this example, the distance between the first electrode 51 and the third electrode 53 along the first direction D1 is shorter than the distance between the third electrode 53 and the second electrode 52 along the first direction D1. Stable operation can be easily achieved.
[0033] As described above, the first electrode region 53a is disposed between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction D1. The third electrode 53 is, for example, a recessed gate electrode. For example, the second semiconductor layer 20 is not provided below the first electrode region 53a. Thus, substantially no carrier region 10C is formed below the first electrode region 53a. Thus, a high threshold voltage can be easily obtained. A part of the first electrode region 53a can be disposed between the fourth partial region 14 and the fifth partial region 15 in the first direction D1.
[0034] For example, the first electrode region 53a is a recessed region. The second electrode region 53b is, for example, an eaves region. By providing the eaves region, the third electrode 53 can be stably formed. By providing the eaves region, for example, the leakage current of the device can be reduced. Current collapse can be improved, for example.
[0035] As described above, in the embodiment, the first electrode region 53a and the second electrode region 53b satisfy the above first condition or second condition. For example, the groove region (the first electrode region 53a) does not contain n-type impurities. On the other hand, the eaves region (the second electrode region 53b) contains n-type impurities. Based on the n-type impurities, the electric potential changes locally. Thereby, a carrier region 10C is likely to be formed below the eaves region. For example, below the eaves region, the carrier concentration is likely to become high. Thereby, a low on-resistance can be easily obtained. According to the embodiment, a semiconductor device with improved characteristics can be provided. For example, since the eaves region (the second electrode region 53b) contains n-type impurities, a structure in which the length of the third electrode 53 (the length in the first direction D1) becomes short can be obtained. For example, in the eaves region containing n-type impurities, the carrier concentration is likely to become high compared with the case where n-type impurities are not contained. A low on-resistance can be easily obtained.
[0036] In the embodiment, the third electrode 53 may further include a third electrode region 53c. A part of the second semiconductor portion 22 is disposed between the fifth portion region 15 and the third electrode region 53c in the second direction D2. The third electrode region 53c contains the first element. Alternatively, the third concentration of the first element in the third electrode region 53c is higher than the first concentration. The third electrode region 53c also corresponds to the eaves region. Since the third electrode region 53c contains the first element, a low on-resistance can be more easily obtained.
[0037] The third electrode 53 may contain a second element, and the second element contains at least one selected from the group consisting of B and Al. The second element functions as a p-type impurity, for example. For example, the first electrode region 53a substantially does not contain the first element and contains the second element. Thereby, for example, a high threshold voltage is more stable and can be easily obtained.
[0038] In one example, the concentration of the second element in the third electrode 53 is 1×10 17 cm －3 or more and 1×10 21 cm －3 or less. A high threshold voltage can be easily obtained. A low gate resistance can be obtained. Stable switching characteristics can be easily obtained. As described later, the concentration of the second element in the third electrode 53 can also be changed.
[0039] As described above, the concentration of the first element is non-uniform in the third electrode 53. In one example, at least any one of the second concentration in the second electrode region 53b and the third concentration in the third electrode region 53c can be 10 times or more and 1000 times or less of the first concentration in the first electrode region 53a.
[0040] For example, at least any one of the second concentration and the third concentration can be 1×10 16 cm－3 above and 1×10 21 cm －3 or less. For example, the first concentration may be less than 1×10 16 cm －3 .
[0041] As Figure 1 shown, the third electrode 53 may further include a fourth electrode region 53d. The fourth electrode region 53d is disposed between the second electrode region 53b and the third electrode region 53c in the first direction D1. In one example, the fourth electrode region 53d contains the first element. Alternatively, the fourth concentration of the first element in the fourth electrode region 53d is higher than the first concentration in the first electrode region 53a.
[0042] In another example, the fourth electrode region 53d does not contain the first element. Alternatively, the fourth concentration of the first element in the fourth electrode region 53d is lower than the second concentration in the second electrode region 53b. The fourth concentration is lower than the third concentration in the third electrode region 53c.
[0043] For example, the first electrode region 53a may contain a second element (including at least one selected from the group consisting of B and Al). It is easy to obtain a high threshold voltage. In one example at this time, for example, the second electrode region 53b does not contain the second element. Alternatively, the concentration of the second element in the second electrode region 53b may be lower than the concentration of the second element in the first electrode region 53a. In this case, for example, the second concentration of the first element in the second electrode region 53b may be higher than the concentration of the second element in the second electrode region 53b. It is easy to obtain a lower on-current.
[0044] In one example when the first electrode region 53a contains the second element (including at least one selected from the group consisting of B and Al), the fourth electrode region 53d does not contain the second element. Alternatively, the concentration of the second element in the fourth electrode region 53d may be lower than the concentration of the second element in the first electrode region 53a.
[0045] For example, the fourth concentration of the first element in the fourth electrode region 53d may be higher than the concentration of the second element in the fourth electrode region 53d. It is easy to obtain a low gate resistance. The switching characteristics are easily stabilized.
[0046] As Figure 1As shown, for example, the first insulating member 41 includes a first insulating region 41a, a second insulating region 41b, and a third insulating region 41c. The first insulating region 41a is disposed between the third partial region 13 and the first electrode region 53a in the second direction D2. The second insulating region 41b is disposed between the first semiconductor portion 21 and the first electrode region 53a in the first direction D1. The third insulating region 41c is disposed between the first electrode region 53a and the second semiconductor portion 22 in the first direction D1. At least a part of these insulating regions functions as a gate insulating film.
[0047] The first insulating member 41 may further include a fourth insulating region 41d and a fifth insulating region 41e. At least a part of the fourth insulating region 41d is disposed between the first semiconductor portion 21 and the second electrode region 53b in the second direction D2. At least a part of the fifth insulating region 41e is disposed between the second semiconductor portion 22 and the third electrode region 53c in the second direction D2.
[0048] The first insulating member 41 contains, for example, silicon and oxygen. The first insulating member 41 contains, for example, silicon oxide. Stable insulation can be obtained.
[0049] As Figure 1 shown, the semiconductor device 110 may further include a first compound member 31. The first compound member 31 contains Al z1 Ga 1－z1 N (0 < z1 ≤ 1, x2 < z1). The composition ratio z1 can be, for example, 0.8 or more and 1 or less. The first compound member 31 may contain, for example, AlN. The first compound member 31 includes a first compound region 31a. The first compound region 31a is disposed between the third partial region 13 and the first insulating region 41a. Due to the provision of the first compound region 31a, higher mobility can be obtained. Lower on-resistance can be obtained.
[0050] The first compound member 31 may further include a second compound region 31b and a third compound region 31c. The second compound region 31b is disposed between the first semiconductor portion 21 and the second insulating region 41b. The third compound region 31c is disposed between the third insulating region 41c and the second semiconductor portion 22. It is difficult to generate fixed charges between the second compound region 31b and the first semiconductor portion 21. It is difficult to generate fixed charges between the third compound region 31c and the second semiconductor portion 22. It is easy to obtain a high threshold voltage. Lower on-resistance can be obtained. By using the second compound region 31b and the third compound region 31c, it is easy to suppress the diffusion of the second element into the second semiconductor portion 22 in the manufacturing process. It is easy to obtain a stable device.
[0051] The first compound member 31 may further include a fourth compound region 31d and a fifth compound region 31e. The fourth compound region 31d is disposed between the first semiconductor portion 21 and the fourth insulating region 41d in the second direction D2. The fifth compound region 31e is disposed between the second semiconductor portion 22 and the fifth insulating region 41e in the second direction D2. By providing the fourth compound region 31d and the fifth compound region 31e, for example, it is easy to suppress the diffusion of the first element into the second semiconductor layer 20 in the manufacturing process. A stable device can be easily obtained.
[0052] The semiconductor device 110 may further include a second insulating member 42. The second insulating member 42 includes a first insulating portion 42a and a second insulating portion 42b. The first semiconductor portion 21 is disposed between the fourth partial region 14 and the first insulating portion 42a in the second direction D2. In this example, the first semiconductor portion 21 is disposed between the fourth partial region 14 and the fourth compound region 31d in the second direction D2. The second semiconductor portion 22 is disposed between the fifth partial region 15 and the second insulating portion 42b in the second direction D2. In this example, the second semiconductor portion 22 is disposed between the fifth partial region 15 and the fifth compound region 31e in the second direction D2.
[0053] The second insulating member 42 contains nitrogen, for example. The second insulating member 42 contains nitrogen and silicon, for example. Due to the provision of the second insulating member 42, for example, the second semiconductor layer 20 becomes stable. The second insulating member 42 functions as a protective film, for example.
[0054] The semiconductor device 110 may further include a substrate 10S and a nitride layer 10B. The substrate 10S is a substrate, for example. The substrate 10S may be a silicon substrate or the like, for example. The substrate 10S may also be a GaN substrate or the like, for example. The nitride layer 10B is disposed between the substrate 10S and the semiconductor member 10M. The nitride layer 10B is a buffer layer, for example. The nitride layer 10B contains Ga, Al, and nitrogen, for example. For example, the nitride layer 10B is provided above the substrate 10S. The first semiconductor layer 10 is provided above the nitride layer 10B. The second semiconductor layer 20 is provided above the first semiconductor layer 10.
[0055] In the embodiment, the first element in the third electrode 53 may be introduced by ion implantation or the like, for example. Ion implantation using a mask or the like can be used, for example. The concentration distribution of the first element in the third electrode 53 can be obtained by depth control in ion implantation.
[0056] The second element in the third electrode 53 can be introduced into the third electrode 53 by forming a silicon film containing the second element or the like. The second element can also be introduced into the third electrode 53 by ion implantation.
[0057] In an embodiment, information about the material composition can be obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc. In an embodiment, information about the length and thickness can be obtained by electron microscope observation, etc.
[0058] The embodiment may include the following technical solutions.
[0059] (Technical solution 1)
[0060] A semiconductor device includes:
[0061] A first electrode;
[0062] A second electrode;
[0063] A third electrode containing silicon, the position of the third electrode in a first direction from the first electrode towards the second electrode is between the position of the first electrode in the first direction and the position of the second electrode in the first direction, and the third electrode includes a first electrode region and a second electrode region;
[0064] A semiconductor member including a first semiconductor layer and a second semiconductor layer. In the semiconductor member,
[0065] The first semiconductor layer contains Al x1 Ga 1－x1 N (0 ≤ x1 < 1), the first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. A second direction from the first partial region towards the first electrode intersects the first direction. The direction from the second partial region towards the second electrode is along the second direction. The direction from the third partial region towards the first electrode region is along the second direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction.
[0066] The second semiconductor layer contains Al x2 Ga 1－x2N(0 < x2 ≤ 1, x1 < x2), the second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. Along the second direction, the direction from the fourth partial region towards the first semiconductor portion, and the direction from the fifth partial region towards the second semiconductor portion are both along the second direction. The first electrode region is between the first semiconductor portion and the second semiconductor portion in the first direction, and a part of the first semiconductor portion is disposed between the fourth partial region and the second electrode region in the second direction; and
[0067] A first insulating member is disposed between the semiconductor member and the third electrode,
[0068] wherein, the first electrode region and the second electrode region satisfy a first condition or a second condition,
[0069] In the first condition, the second electrode region contains a first element, and the first electrode region does not contain the first element, where the first element includes at least one selected from the group consisting of P and As,
[0070] In the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region.
[0071] (Technical solution 2)
[0072] The semiconductor device according to Technical solution 1, wherein,
[0073] The third electrode further includes a third electrode region,
[0074] A part of the second semiconductor portion is disposed between the fifth partial region and the third electrode region in the second direction,
[0075] The third electrode region contains the first element, or a third concentration of the first element in the third electrode region is higher than the first concentration.
[0076] (Technical solution 3)
[0077] The semiconductor device according to Technical solution 2, wherein,
[0078] The third electrode further includes a fourth electrode region,
[0079] The fourth electrode region is disposed between the second electrode region and the third electrode region in the first direction,
[0080] The fourth electrode region contains the first element, or the fourth concentration of the first element in the fourth electrode region is higher than the first concentration.
[0081] (Technical solution 4)
[0082] The semiconductor device according to Technical solution 2, wherein
[0083] The third electrode further includes a fourth electrode region,
[0084] The fourth electrode region is disposed between the second electrode region and the third electrode region in the first direction,
[0085] The fourth electrode region does not contain the first element, or the fourth concentration of the first element in the fourth electrode region is lower than the second concentration and lower than the third concentration.
[0086] (Technical solution 5)
[0087] The semiconductor device according to Technical solution 3 or 4, wherein
[0088] The first electrode region contains a second element, and the second element contains at least one selected from the group consisting of B and Al,
[0089] The second electrode region does not contain the second element, or the concentration of the second element in the second electrode region is lower than the concentration of the second element in the first electrode region.
[0090] (Technical solution 6)
[0091] The semiconductor device according to Technical solution 5, wherein
[0092] The second concentration is higher than the concentration of the second element in the second electrode region.
[0093] (Technical solution 7)
[0094] The semiconductor device according to Technical solution 3 or 4, wherein
[0095] The first electrode region contains a second element, and the second element contains at least one selected from the group consisting of B and Al,
[0096] The fourth electrode region does not contain the second element, or the concentration of the second element in the fourth electrode region is lower than the concentration of the second element in the first electrode region.
[0097] (Technical solution 8)
[0098] The semiconductor device according to Technical solution 7, wherein
[0099] The 4th concentration is higher than the concentration of the 2nd element in the 4th electrode region.
[0100] (Technical solution 9)
[0101] The semiconductor device according to any one of technical solutions 1 to 4, wherein
[0102] The 3rd electrode contains a 2nd element, and the 2nd element contains at least one selected from the group consisting of B and Al.
[0103] (Technical solution 10)
[0104] The semiconductor device according to technical solution 9, wherein
[0105] The concentration of the 2nd element in the 3rd electrode is 1×10 17 cm -3 or more and 1×10 21 cm -3 or less.
[0106] (Technical solution 11)
[0107] The semiconductor device according to any one of technical solutions 1 to 10, wherein
[0108] The 2nd concentration is 10 times or more and 1000 times or less of the 1st concentration.
[0109] (Technical solution 12)
[0110] The semiconductor device according to any one of technical solutions 1 to 11, wherein
[0111] The 2nd concentration is 1×10 16 cm -3 or more and 1×10 21 cm -3 or less.
[0112] (Technical solution 13)
[0113] The semiconductor device according to any one of technical solutions 1 to 12, wherein
[0114] The 1st concentration is less than 1×10 16 cm -3 .
[0115] (Technical solution 14)
[0116] The semiconductor device according to any one of technical solutions 1 to 13, wherein
[0117] The first insulating member includes a first insulating region, a second insulating region, and a third insulating region.
[0118] The first insulating region is disposed between the third partial region and the first electrode region in the second direction.
[0119] The second insulating region is disposed between the first semiconductor portion and the first electrode region in the first direction.
[0120] The third insulating region is disposed between the first electrode region and the second semiconductor portion in the first direction.
[0121] (Technical solution 15)
[0122] The semiconductor device according to Technical solution 14, wherein
[0123] It further includes a first compound member, and the first compound member contains Al z1 Ga 1－z1 N (0 < z1 ≤ 1, x2 < z1),
[0124] The first compound member includes a first compound region.
[0125] The first compound region is disposed between the third partial region and the first insulating region.
[0126] (Technical solution 16)
[0127] The semiconductor device according to Technical solution 15, wherein
[0128] The first compound member further includes a second compound region and a third compound region.
[0129] The second compound region is disposed between the first semiconductor portion and the first insulating region.
[0130] The third compound region is disposed between the third insulating region and the second semiconductor portion.
[0131] (Technical solution 17)
[0132] The semiconductor device according to Technical solution 2, wherein
[0133] The first insulating member includes a fourth insulating region and a fifth insulating region.
[0134] At least a part of the fourth insulating region is disposed between the first semiconductor portion and the second electrode region in the second direction.
[0135] At least a part of the fifth insulating region is disposed between the second semiconductor portion and the third electrode region in the second direction.
[0136] (Technical solution 18)
[0137] The semiconductor device according to any one of Technical solutions 1 to 17, wherein
[0138] It further includes a second insulating member,
[0139] The second insulating member includes a first insulating portion and a second insulating portion,
[0140] The first semiconductor portion is disposed between the fourth portion region and the first insulating portion in the second direction,
[0141] The second semiconductor portion is disposed between the fifth portion region and the second insulating portion in the second direction.
[0142] (Technical solution 19)
[0143] The semiconductor device according to any one of Technical solutions 1 to 18, wherein
[0144] A part of the first electrode region is disposed between the fourth portion region and the fifth portion region in the first direction.
[0145] (Technical solution 20)
[0146] The semiconductor device according to any one of Technical solutions 1 to 19, wherein
[0147] The first electrode is electrically connected to the first semiconductor portion,
[0148] The second electrode is electrically connected to the second semiconductor portion.
[0149] According to the embodiment, a semiconductor device with improved characteristics can be provided.
[0150] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific structures of the semiconductor components, semiconductor layers, electrodes, insulating members, etc. included in the semiconductor device, as long as those skilled in the art can similarly implement the present invention by appropriately selecting from the publicly known range and obtain the same effects, they are included in the scope of the present invention.
[0151] In addition, as long as it includes the gist of the present invention, the combination of any two or more elements in the specific examples within the technically possible range is also included in the scope of the present invention.
[0152] In addition, as long as it includes the gist of the present invention, all semiconductor devices that can be implemented by appropriately designing and changing the semiconductor devices described above as embodiments of the present invention by those skilled in the art also fall within the scope of the present invention.
[0153] In addition, it should be understood that within the scope of the idea of the present invention, various modification examples and correction examples can be conceived by those skilled in the art, and these modification examples and correction examples also fall within the scope of the present invention.
[0154] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope or gist of the invention and are included in the invention described in the claims and its equivalent scope.
Claims
1. A semiconductor device comprising: 1st electrode; The second electrode; a third electrode comprising silicon, wherein a position of the third electrode in a first direction from the first electrode toward the second electrode is between a position of the first electrode in the first direction and a position of the second electrode in the first direction, and the third electrode includes a first electrode region and a second electrode region; A semiconductor component includes a first semiconductor layer and a second semiconductor layer, wherein: The first semiconductor layer includes Al x1 Ga 1－x1 N, wherein 0≤x1<1, the first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region, a second direction from the first partial region toward the first electrode intersects the first direction, a direction from the second partial region toward the second electrode is along the second direction, a direction from the third partial region toward the first electrode region is along the second direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, and a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction, The second semiconductor layer includes Al x2 Ga 1－x2 N, wherein 0<x2≤1, x1<x2, the second semiconductor layer includes a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region toward the first semiconductor portion is along the second direction, a direction from the fifth partial region toward the second semiconductor portion is along the second direction, the first electrode region is located between the first semiconductor portion and the second semiconductor portion in the first direction, and a portion of the first semiconductor portion is disposed between the fourth partial region and the second electrode region in the second direction; and a first insulating member disposed between the semiconductor member and the third electrode, in, The first electrode region and the second electrode region satisfy the first condition or the second condition, In the first condition, the second electrode region includes a first element, and the first electrode region does not include the first element, wherein the first element includes at least one selected from the group consisting of P and As, In the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region.
2. The semiconductor device according to claim 1, wherein The third electrode further includes a third electrode region, A portion of the second semiconductor portion is provided between the fifth portion region and the third electrode region in the second direction, The third electrode region contains the first element, or a third concentration of the first element in the third electrode region is higher than the first concentration.
3. The semiconductor device according to claim 2, wherein: The third electrode further includes a fourth electrode region, The fourth electrode region is provided between the second electrode region and the third electrode region in the first direction, The fourth electrode region contains the first element, or a fourth concentration of the first element in the fourth electrode region is higher than the first concentration.
4. The semiconductor device according to claim 2, wherein: The third electrode further includes a fourth electrode region, The fourth electrode region is provided between the second electrode region and the third electrode region in the first direction, The fourth electrode region does not contain the first element, or a fourth concentration of the first element in the fourth electrode region is lower than the second concentration and lower than the third concentration.
5. The semiconductor device according to claim 3, wherein: The first electrode region includes a second element, the second element including at least one selected from the group consisting of B and Al. The second electrode region does not contain the second element, or the concentration of the second element in the second electrode region is lower than the concentration of the second element in the first electrode region.
6. The semiconductor device according to claim 5, wherein: The second concentration is higher than a concentration of the second element in the second electrode region.
7. The semiconductor device according to claim 3, wherein: The first electrode region includes a second element, the second element including at least one selected from the group consisting of B and Al. The fourth electrode region does not contain the second element, or the concentration of the second element in the fourth electrode region is lower than the concentration of the second element in the first electrode region.
8. The semiconductor device according to claim 1, wherein The third electrode includes a second element including at least one selected from the group consisting of B and Al.
9. The semiconductor device according to claim 1, wherein: The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The first insulating region is provided between the third partial region and the first electrode region in the second direction, The second insulating region is provided between the first semiconductor portion and the first electrode region in the first direction. The third insulating region is provided between the first electrode region and the second semiconductor portion in the first direction.
10. The semiconductor device according to claim 9, wherein The invention further comprises a first compound member, wherein the first compound member comprises Al z1 Ga 1－z1 N, where 0<z1≤1, x2<z1, The first compound component includes a first compound region, The first compound region is provided between the third partial region and the first insulating region.